TWI414643B - Composition of copper electroplating solution - Google Patents
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- TWI414643B TWI414643B TW99129544A TW99129544A TWI414643B TW I414643 B TWI414643 B TW I414643B TW 99129544 A TW99129544 A TW 99129544A TW 99129544 A TW99129544 A TW 99129544A TW I414643 B TWI414643 B TW I414643B
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本發明是有關於一種電鍍液組成物,且特別是有關於一種銅電鍍液組成物。This invention relates to a plating bath composition, and more particularly to a copper plating bath composition.
隨著半導體元件尺寸的縮減,銅金屬連線的普及率也逐漸增加,目前銅製程大部份採用電鍍法來進行。於盲孔或通孔中沉積銅時,必須要控制銅離子在盲孔底部的析出速率要大於盲孔外表面上的沉積速率,或者必須要控制銅離子在通孔中央的沉積速率要大於通孔外表面上的沉積速率,否則會因孔口電流密度較高,導致電鍍完畢後,在填充的孔洞中央形成一條縫隙(seam)或是一個空洞(void)。而空洞與縫隙會影響訊號傳遞速率與降低晶片之信賴度。As the size of semiconductor components has shrunk, the popularity of copper metal wiring has gradually increased. Currently, most copper processes are performed by electroplating. When depositing copper in a blind hole or a via hole, it is necessary to control the deposition rate of copper ions at the bottom of the blind hole to be larger than the deposition rate on the outer surface of the blind hole, or it is necessary to control the deposition rate of copper ions in the center of the through hole to be larger than that of the through hole. The deposition rate on the outer surface of the hole, otherwise the hole current density is higher, resulting in a seam or a void in the center of the filled hole after the plating is completed. Cavities and gaps can affect the signal transfer rate and reduce the reliability of the chip.
一般而言,現今學界與業界的電鍍液配方大多利用添加多重添加劑,使盲孔孔底的銅沉積速率大於盲孔外表面而產生孔底上移的現象,改善空洞與縫隙的問題。然而,由於每種添加劑個別皆會受到環境溫度影響,且兩種或兩種以上添加劑之間,甚至是添加劑與電鍍液中其他成分的交互作用都會影響到整個電鍍過程。再者,多重添加劑通常會導致分析的困難,難以達到穩定的品質控制。換句話說,一旦添加劑種類多,則分析及控制均不易。此外,上述銅電鍍液應用於印刷電路板(Printed Circuit Board,PCB)時,僅能填充盲孔,而無法用於填充通孔。Generally speaking, most of the electroplating solution formulations in the academic circles and the industry today use the addition of multiple additives, so that the copper deposition rate at the bottom of the blind hole is larger than that of the outer surface of the blind hole, and the phenomenon of the bottom of the hole is shifted upward, thereby improving the problem of voids and gaps. However, since each additive is individually affected by the ambient temperature, the interaction between the two or more additives, and even the additives and other components in the plating solution, affects the entire plating process. Furthermore, multiple additives often lead to difficulties in analysis and difficult to achieve stable quality control. In other words, once there are many types of additives, analysis and control are not easy. In addition, when the above copper plating solution is applied to a printed circuit board (PCB), it can only fill a blind hole, and cannot be used to fill a through hole.
因此,本發明之是在提供一種銅電鍍液組成物,可適用於電鍍填充具有微米級或次微米級通孔或盲孔的基材。Accordingly, the present invention is directed to a copper plating bath composition suitable for electroplating a substrate having micron or submicron vias or blind vias.
依據本發明一實施方式,一種銅電鍍液組成物包含0.6-1 M含銅化合物、0.1-1M羧酸、10-100 ppm有機含氮雜環化合物與10-100 ppm鹵素離子。According to an embodiment of the present invention, a copper plating solution composition comprises 0.6-1 M of a copper-containing compound, 0.1-1 M of a carboxylic acid, 10 to 100 ppm of an organic nitrogen-containing heterocyclic compound, and 10 to 100 ppm of a halogen ion.
根據本發明一實施方式,上述羧酸不單指直鏈羧酸,亦包含支鏈飽和一元羧酸,含碳數為1-10。According to an embodiment of the present invention, the carboxylic acid does not simply mean a linear carboxylic acid, but also a branched saturated monocarboxylic acid having a carbon number of 1-10.
根據本發明一實施方式,上述含銅化合物為選自由無水硫酸銅、含水硫酸銅、碳酸銅及氧化銅所組成之群組。上述含水硫酸銅為五水合硫酸銅。According to an embodiment of the present invention, the copper-containing compound is selected from the group consisting of anhydrous copper sulfate, aqueous copper sulfate, copper carbonate, and copper oxide. The above aqueous copper sulfate is copper sulfate pentahydrate.
根據本發明一實施方式,上述鹵素離子為氯離子、溴離子及碘離子。According to an embodiment of the present invention, the halogen ion is a chloride ion, a bromide ion, and an iodide ion.
根據本發明一實施方式,上述有機含氮雜環化合物為氮唑化合物。氮唑化合物例如為四氮唑藍(blue tetrazolium chloride)、氯化硝基四氮唑藍(Nitro blue tetrazolium chloride monohydrate)或四硝基四氮唑藍(Tetranitro Blue Tetrazolium)。According to an embodiment of the present invention, the organic nitrogen-containing heterocyclic compound is an azole compound. The azole compound is, for example, blue tetrazolium chloride, Nitro blue tetrazolium chloride monohydrate or Tetranitro Blue Tetrazolium.
本發明的實施方式中,提出一種銅電鍍液組成物,包含含銅化合物、羧酸、有機含氮雜環化合物與鹵素離子。於銅電鍍液中,含銅化合物濃度為0.6-1 M,作為銅離子來源。含銅化合物為選自由無水硫酸銅、含水硫酸銅、碳酸銅及氧化銅所組成之群組。根據本發明一實施例,含水 硫酸銅為五水硫酸銅(CuSO4 .5H2 O)。In an embodiment of the present invention, a copper plating solution composition comprising a copper-containing compound, a carboxylic acid, an organic nitrogen-containing heterocyclic compound, and a halogen ion is proposed. In the copper plating bath, the concentration of the copper-containing compound is 0.6-1 M, which is a source of copper ions. The copper-containing compound is selected from the group consisting of anhydrous copper sulfate, aqueous copper sulfate, copper carbonate, and copper oxide. According to an embodiment of the invention, the aqueous copper sulfate is copper sulfate pentahydrate (CuSO 4 .5H 2 O).
於本發明之銅電鍍液中,係以羧酸為電解質來源之一。根據本發明一實施方式,羧酸為含碳數1-10的直鏈或支鏈飽和一元羧酸,例如甲酸、乙酸、丙酸或異丁酸。羧酸於銅電鍍液中的濃度為0.1-1M。In the copper plating solution of the present invention, carboxylic acid is one of the sources of the electrolyte. According to one embodiment of the invention, the carboxylic acid is a linear or branched saturated monocarboxylic acid having a carbon number of from 1 to 10, such as formic acid, acetic acid, propionic acid or isobutyric acid. The concentration of the carboxylic acid in the copper plating bath is from 0.1 to 1 M.
由於有機含氮雜環化合物之氮原子易帶正電荷,因此於電鍍過程中,會受電流分佈的影響而優先聚集吸附在被鍍面的高電流密度區,進而抑制銅沉積速率。具體而言,通孔或盲孔開口處的電流高於通孔或盲孔內部,使得有機含氮雜環化合物在通孔或盲孔開口處至其內部的吸附濃度呈由高至低的梯度分布,進而控制通孔或盲孔內外的銅沉積速率,藉以減低空洞或縫隙的產生。同時,有機含氮雜環化合物也可使被鍍面表面平滑,可作為電鍍過程中的平整劑。有機含氮雜環化合物例如氮唑化合物(Azole Compound)。Since the nitrogen atom of the organic nitrogen-containing heterocyclic compound is easily positively charged, it is preferentially aggregated and adsorbed in the high current density region of the plated surface during the electroplating process, thereby suppressing the copper deposition rate. Specifically, the current at the opening of the through hole or the blind hole is higher than the inside of the through hole or the blind hole, so that the adsorption concentration of the organic nitrogen-containing heterocyclic compound at the opening of the through hole or the blind hole is high to low. The distribution, in turn, controls the rate of copper deposition inside and outside the via or blind via to reduce the creation of voids or gaps. At the same time, the organic nitrogen-containing heterocyclic compound can also smooth the surface of the plated surface and can be used as a leveling agent in the electroplating process. An organic nitrogen-containing heterocyclic compound such as an Azole Compound.
此外,由於羧酸為有機弱酸,不易與有機含氮雜環化合物反應,可改善銅電鍍液容易沉澱之問題,並可使電鍍後之填孔不會產生夾鍍現象。所謂夾鍍現象係指於填孔中出現裂痕或雜質的現象或者是板面剝離的情況。In addition, since the carboxylic acid is an organic weak acid, it is difficult to react with the organic nitrogen-containing heterocyclic compound, which can improve the problem that the copper plating solution is easily precipitated, and can prevent the pinch plating phenomenon after the plating. The phenomenon of plate plating refers to the phenomenon of cracks or impurities in the hole filling or the peeling of the plate surface.
根據本發明一實施方式,上述氮唑化合物可為四氮唑藍(blue tetrazolium chloride)、氯化硝基四氮唑藍(Nitro blue tetrazolium chloride monohydrate)或四硝基四氮唑藍(Tetranitro Blue Tetrazolium)。其個別化學式依序如下列式(i)、式(ii)與式(iii)所示。According to an embodiment of the present invention, the azole compound may be blue tetrazolium chloride, Nitro blue tetrazolium chloride monohydrate or Tetranitro Blue Tetrazolium. ). The individual chemical formulas are sequentially shown in the following formulas (i), (ii) and (iii).
上述之鹵素離子能有助於使有機含氮雜環化合物與銅離子形成配位結構,以穩定吸附在銅層上,而且鹵素離子 更能加強有機含氮雜環化合物在銅層上的吸附性。根據本發明一實施例,鹵素離子濃度為10-100 ppm。The above halogen ions can help to form a coordination structure between the organic nitrogen-containing heterocyclic compound and the copper ion to stably adsorb on the copper layer, and the halogen ion The adsorption of the organic nitrogen-containing heterocyclic compound on the copper layer can be further enhanced. According to an embodiment of the invention, the halogen ion concentration is 10-100 ppm.
接下來說明以不同銅電鍍液組成物進行電鍍填孔後,再利用光學顯微鏡(Optical Microscope,OM)觀察基板橫切面與基板表面的結果。電鍍填孔步驟如下所述。Next, the results of electroplating and filling with different copper plating solution compositions, and then observing the cross-section of the substrate and the surface of the substrate with an optical microscope (OM) will be described. The electroplating and filling steps are as follows.
首先,於電鍍前,先將含銅化合物、電解質與鹵素離子分別混合均勻,置入哈林試驗槽(Haring cell)中,並打開空氣幫浦,使用冷卻循環機將溫度維持在28℃,放置30分鐘。另準備一預浸杯,內含有機含氮雜環化合物。First, before plating, the copper-containing compound, electrolyte and halogen ions are separately mixed, placed in a Haring cell, and the air pump is opened, and the temperature is maintained at 28 ° C using a cooling cycle machine. 30 minutes. A prepreg cup is also prepared containing an organic nitrogen-containing heterocyclic compound.
所使用的試片為4×6平方公分的印刷電路板。試片上具有直徑為100 μm或150 μm的通孔,通孔深度為230 μm,因此通孔深寬比為2.3或1.53。接著,以0.54 M硫酸清洗試片,去除板面的污染物,並以超音波震盪2分鐘,去除試片通孔中的氣泡殘留,再以超純水沖洗。The test piece used was a 4 x 6 square centimeter printed circuit board. The test piece has a through hole having a diameter of 100 μm or 150 μm and a through hole depth of 230 μm, so the through hole aspect ratio is 2.3 or 1.53. Next, the test piece was washed with 0.54 M sulfuric acid to remove the contaminants on the surface of the plate, and the ultrasonic wave was shaken for 2 minutes to remove the residual air bubbles in the through hole of the test piece, and then rinsed with ultrapure water.
把試片放入已具有有機含氮雜環化合物哈林試驗槽中,使槽中鍍液混合均勻吸附於試片 上。電鍍時採用直流電的方式提供。The test piece was placed in a Harlem test tank having an organic nitrogen-containing heterocyclic compound, and the plating solution in the bath was uniformly mixed and adsorbed on the test piece . It is supplied by direct current during electroplating.
請參閱表一,其列出本發明各實驗例中,所使用的銅電鍍液組成物。Please refer to Table 1, which lists the copper plating solution compositions used in the respective experimental examples of the present invention.
第1圖是本發明實驗例1-3進行電鍍銅填孔後,基板之剖面圖。(a)、(b)為以甲酸作為電解質(實驗例1)進行電鍍後的基板剖面圖。(c)、(d)則以乙酸作為電解質(實驗例2)進行電鍍後的基板剖面圖。(e)、(f)則為以丙酸作為電解質(實驗例3)進行電鍍後的基板剖面圖。其中,(a)、(c)、(e)以光學顯微鏡觀察的放大倍數分別為50倍,而(b)、(d)、(e)之放大倍數為100倍。電鍍時間為9小時。Fig. 1 is a cross-sectional view showing a substrate after electroplating of copper in Experimental Example 1-3 of the present invention. (a) and (b) are cross-sectional views of the substrate after electroplating using formic acid as an electrolyte (Experimental Example 1). (c) and (d) are cross-sectional views of the substrate after electroplating using acetic acid as an electrolyte (Experimental Example 2). (e) and (f) are cross-sectional views of the substrate after electroplating using propionic acid as an electrolyte (Experimental Example 3). Among them, the magnifications of (a), (c), and (e) observed by an optical microscope were 50 times, and the magnifications of (b), (d), and (e) were 100 times. The plating time is 9 hours.
由第1圖中,很明顯可以看到當以羧酸作為銅電鍍液中的電解質時,並無夾鍍現象產生,且通孔中的銅填充效果良好。From Fig. 1, it is apparent that when a carboxylic acid is used as the electrolyte in the copper plating solution, no selenium plating occurs and the copper filling effect in the via holes is good.
第2圖是本發明實驗例2進行電鍍銅填孔過程中,不同電鍍時間時基板的剖面圖。利用不同電鍍時間點的試片切片,來觀察乙酸作為電解質時,銅沉積的效果。(a)-(c)的電鍍時間為5小時,(d)-(f)的電鍍時間為9小時,(g)-(i)的電鍍時間為12小時。光學顯微鏡觀察的放大倍數則分別如下:(a)、(d)、(g)為50倍,(b)、(e)、(h)為100倍,而(c)、(f)、(i)為200倍。Fig. 2 is a cross-sectional view showing the substrate at different plating times in the process of electroplating copper filling in Experimental Example 2 of the present invention. The test piece slicing at different plating time points was used to observe the effect of copper deposition when acetic acid was used as the electrolyte. The plating time of (a)-(c) was 5 hours, the plating time of (d)-(f) was 9 hours, and the plating time of (g)-(i) was 12 hours. The magnifications observed by optical microscopy are as follows: (a), (d), (g) are 50 times, (b), (e), (h) are 100 times, and (c), (f), i) is 200 times.
當進行電鍍過程時,通孔開口兩側的電流密度較高於通孔中央的電流密度,因此,有機含氮雜環化合物吸附於通孔開口兩側的濃度較高,而越往通孔中央則濃度越低。而有機含氮雜環化合物會抑制銅沉積速率,因此使得銅金屬會由通孔中央開始沉積。由第2圖結果可知,當以乙酸作為電解質時,並不會影響有機含氮雜環化合物吸附於高 電流密度區的能力,銅金屬同樣由通孔中央開始沉積,因此可減少填充通孔後,所產生的空洞現象。When the electroplating process is performed, the current density on both sides of the via opening is higher than the current density in the center of the via hole. Therefore, the concentration of the organic nitrogen-containing heterocyclic compound adsorbed on both sides of the opening of the via hole is higher, and the center of the through hole is higher. The lower the concentration. The organic nitrogen-containing heterocyclic compound inhibits the copper deposition rate, thus causing the copper metal to be deposited from the center of the via. It can be seen from the results in Fig. 2 that when acetic acid is used as the electrolyte, it does not affect the adsorption of the organic nitrogen-containing heterocyclic compound to a high The ability of the current density zone, copper metal also begins to deposit from the center of the via, thus reducing the voids created after filling the via.
第3圖本發明實驗例1-3進行電鍍銅填孔後,基板表面照片。第3圖中,(a)-(c)依序為實驗例1-3之基板表面。以羧酸作為銅電鍍液中的電解質,基板表面並無銅瘤的產生。Fig. 3 is a photograph of the surface of the substrate after the electroplating of the copper was carried out in Experimental Example 1-3 of the present invention. In Fig. 3, (a) - (c) are the substrate surfaces of Experimental Example 1-3. Carboxylic acid is used as the electrolyte in the copper plating solution, and there is no copper tumor on the surface of the substrate.
由上述本發明實施方式可知,應用本發明之銅電鍍液組成物具有下列優點。第一,由於羧酸之酸性較弱,因此不易與銅電鍍液中的其他成分交互作用,減少了銅電鍍沉澱的產生。第二,可改善電鍍後的夾鍍現象,基板表面也不會有銅瘤產生,提高印刷電路板的信賴度。第三,由於羧酸之酸性較弱,因此可以擴大電鍍時使用無機酸的操作範圍。As is apparent from the above embodiments of the present invention, the copper plating solution composition to which the present invention is applied has the following advantages. First, since the acidity of the carboxylic acid is weak, it is not easy to interact with other components in the copper plating solution, which reduces the occurrence of copper plating precipitation. Secondly, the phenomenon of plate plating after plating can be improved, and no copper film is generated on the surface of the substrate, thereby improving the reliability of the printed circuit board. Third, since the acidity of the carboxylic acid is weak, the operating range of the inorganic acid used in the plating can be expanded.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖是本發明實驗例1-3進行電鍍銅填孔後,基板之剖面圖。The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Sectional view.
第2圖是本發明實驗例2進行電鍍銅填孔過程中,不同電鍍時間時基板的剖面圖。Fig. 2 is a cross-sectional view showing the substrate at different plating times in the process of electroplating copper filling in Experimental Example 2 of the present invention.
第3圖本發明實驗例1-3進行電鍍銅填孔後,基板表面照片。Fig. 3 is a photograph of the surface of the substrate after the electroplating of the copper was carried out in Experimental Example 1-3 of the present invention.
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CN113279026A (en) * | 2021-04-25 | 2021-08-20 | 厦门理工学院 | Novel liquid medicine for copper foil blind hole filling |
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