TWI634601B - Semiconductor device manufacturing method and semiconductor device - Google Patents

Abstract

An object of the present invention is to provide a method for producing a semiconductor device, which is capable of reducing complicated steps in accordance with the adjustment of the resin filling amount in accordance with conventional warping measures due to the filler and the number of defective components in the formation of the sealing layer. At the same time, it is possible to manufacture a semiconductor device which is excellent in heat resistance and moisture resistance while reducing warpage.

The method of the present invention is a method of manufacturing a semiconductor device, comprising: a resin mounting step of placing a thermosetting resin in a larger amount than that required for formation of a sealing layer on a semiconductor element non-mounting substrate; In the first cavity, the semiconductor element mounting substrate is placed on one of the mold upper mold and the lower mold, and the semiconductor element non-mounting substrate is placed in the other mold. a step of discharging the upper mold and the lower mold and discharging the excess thermosetting resin to the outside of the first cavity; and molding the thermosetting resin while pressurizing the upper mold and the lower mold. An integration step of integrating a semiconductor element mounting substrate, a semiconductor element non-mounting substrate, and a sealing layer.

Description

Semiconductor device manufacturing method and semiconductor device

The present invention relates to a method of manufacturing a semiconductor device using a molding die, and a semiconductor device manufactured by the method.

Conventionally, a method of forming a wafer-level sealing method or a method of forming a single-sided organic substrate in which a semiconductor element is mounted in a matrix with a thermosetting epoxy resin has been proposed and discussed (Patent Documents 1-3).

When the semiconductor device is manufactured in the above manner, the substrate is small in size, and the warpage of the substrate after sealing can be controlled by adjusting the linear expansion coefficient of the epoxy resin.

In the case of using a substrate such as a small-diameter wafer having a diameter of about 8 inches (200 mm) or a small-sized organic substrate, although it is still possible to perform sealing molding without any problem, it is a crystal having a diameter of 8 inches or more. Since the shrinkage stress of the epoxy resin or the like is large after the sealing of the round or large organic substrate, large warpage or cracking of the substrate occurs in the wafer or the organic substrate formed by the single surface, and the semiconductor device cannot be manufactured.

In order to solve the problems as described above as the wafer or the metal substrate is enlarged, it is necessary to fill the filler to an extent of 95% by weight. Or the shrinkage stress at the time of hardening is reduced by the low elasticity of the resin.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-044324

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-213087

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2009-032842

However, a thermosetting resin which fills the filler to an extent of about 95% by weight to maintain a sufficiently formed property is currently not manufactured. Further, if the elasticity is low to such an extent that warpage does not occur, defects such as deterioration in heat resistance and moisture resistance occur.

When a substrate in which a plurality of semiconductor elements are mounted is sealed with a resin to form a sealing layer, in the case where a defective semiconductor element is present, the defective element is removed and then sealed. In this case, the amount of resin required for the formation of the sealing layer may become larger than the volume of the defective component that has been excluded. Therefore, it is necessary to control the volume of the resin required for the formation of the sealing layer.

However, it is very cumbersome to calculate the amount of resin required for each sealing during the sealing, and there is a problem that the step time is increased, or the filling amount is insufficient to cause defects such as voids in the sealing layer.

The present invention has been made in view of the problems as described above, and an object of the invention is to provide a method for manufacturing a semiconductor device which does not require a resin which is resistant to warpage caused by a filler and a defective component during formation of a sealing layer. The adjustment of the filling amount reduces the complicated steps, and at the same time, it is possible to manufacture a semiconductor device which is excellent in heat resistance and moisture resistance while reducing warpage.

In order to achieve the above object, according to the present invention, there is provided a method of manufacturing a semiconductor device using a molding die having an upper mold and a lower mold to manufacture a semiconductor device, comprising: preparing a substrate for mounting a semiconductor element a preparation step of the molding die in which the semiconductor element is not mounted on the substrate, and the first cavity in which the sealing layer made of the thermosetting resin is integrated between the substrates; and the semiconductor element non-mounting substrate a resin mounting step of placing the thermosetting resin in an amount larger than the amount required for the formation of the sealing layer; heating the first cavity to room temperature from 200 ° C to 200 ° C to dispose the semiconductor element mounting substrate a step of disposing the semiconductor element non-mounting substrate in the other mold in the mold of the upper mold and the lower mold of the mold, and pressurizing the upper mold and the lower mold to remove excess a step of discharging the thermosetting resin to the outside of the first cavity; And a step of integrating the semiconductor element mounting substrate, the semiconductor element non-mounting substrate, and the sealing layer by molding the thermosetting resin while pressing the lower mold; and integrating the integrated substrate The aforementioned The step of taking out the mold and singulating it by cutting.

According to such a method of manufacturing a semiconductor device, even in the case where a defective semiconductor element is excluded, it is not necessary to adjust the amount of resin to be filled each time, and the substrate and the sealing layer can be surely integrated without voids. Further, by forming the thermosetting resin on the semiconductor non-mount substrate in advance, the trouble at the time of the step can be reduced, and contamination of the production line due to the use of the powder can be prevented. Further, even if the large substrate is sealed, warping or cracking of the substrate after sealing can be suppressed, and the entire sealing can be performed at the wafer level.

Preferably, in the preparation step, the molding die further having a second cavity through which a runner is coupled to the first cavity is prepared, and the excess thermosetting property is obtained in the resin discharging step. The resin is discharged to the second cavity.

In this way, the inside of the first cavity can be filled, and the excess thermosetting resin can be easily discharged to the outside of the first cavity.

In the resin mounting step, the thermosetting resin is preferably placed in an amount of 0.1 to 70 vol% more than the amount required for the formation of the sealing layer.

When the amount is more than 0.1 vol% more than the required amount, the first cavity can be surely filled, and if it is placed at 70 vol%, the excess thermosetting resin can be suppressed from increasing. And suppress the increase in cost.

Preferably, in the integration step, the thermosetting resin is pressed in the first cavity or in the second cavity. Forming.

In this way, the gap of the sealing layer can be reduced, and the performance of the manufactured semiconductor device can be improved.

At this time, pressurization in the first cavity can be performed by pressing air or an inert gas into the second cavity. At this time, the pressurization of the air or the inert gas into the second cavity can be performed by an external pump or a cylinder.

In this way, the inside of the first cavity can be easily pressurized.

In the arranging step, the temperature in the second cavity may be heated to a temperature higher than a temperature in the first cavity, and the resin may be discharged to the second cavity in the resin discharging step. The excess thermosetting resin is hardened earlier than the thermosetting resin in the first cavity. At this time, the temperature in the second cavity can be heated to a temperature in the range of 100 to 250 °C.

In this way, regardless of the volume of the first and second cavities and the amount of the thermosetting resin placed thereon, the first cavity can be surely sealed and the substrate and the sealing layer can be integrated.

In the integration step, the environment in the first cavity may be depressurized to form the thermosetting resin. At this time, the environment in the first cavity can be decompressed to have a vacuum of 0.01333 to 13.33 KPa.

In this way, the void of the sealing layer can be more effectively reduced.

In the method for producing a semiconductor device of the present invention, the thermosetting resin can be formed by compression molding.

In addition, epoxy resin, polyoxyl resin, and poly Any of the oxygen/epoxy hybrid resins is used as the thermosetting resin.

By using such a resin, a semiconductor device excellent in heat resistance and moisture resistance can be produced.

Further, a semiconductor device manufactured by the above-described method of manufacturing a semiconductor device is provided.

Such a semiconductor device is excellent in heat resistance and moisture resistance, and warpage is suppressed, and residual strain is small.

In the method of manufacturing a semiconductor device according to the present invention, after the thermosetting resin is placed on the semiconductor element non-mount substrate in an amount larger than the amount required for the formation of the sealing layer, the semiconductor element mounting substrate and the semiconductor element are disposed in the mold. By mounting the substrate and pressurizing the upper mold and the lower mold to discharge the excess thermosetting resin to the outside of the first cavity, even in the case of eliminating the defective semiconductor element, it is not necessary to form a sealing layer. When the resin filling amount of the number of defective components is adjusted, the substrate and the sealing layer can be surely integrated without voids, and the trouble of the steps or the contamination of the production line can be reduced. Further, since the semiconductor element mounting substrate, the semiconductor element non-mounting substrate, and the sealing layer made of a thermosetting resin between the substrates formed thereon are integrated, the sealing of the substrate can be suppressed even if the large substrate is sealed. Warping or cracking, in addition, it is also possible to seal the wafer at the wafer level.

1‧‧‧Upper mold

2‧‧‧ Lower mold

3‧‧‧Forming mould

4‧‧‧1st cavity

5‧‧‧Semiconductor component mounting substrate

6‧‧‧Semiconductor components are not mounted on the substrate

7‧‧‧Semiconductor components

8‧‧‧ thermosetting resin

9‧‧‧2nd cavity

10‧‧‧Runner

11‧‧‧ Sealing layer

12‧‧‧dicing blade

20‧‧‧Semiconductor device

[Fig. 1] is a flow chart showing a method of manufacturing a semiconductor device of the present invention.

[Fig. 2] A schematic view showing a semiconductor device of the present invention.

[Fig. 3] Fig. 3 is a view showing another example of a mold which can be used in the method of manufacturing a semiconductor device of the present invention.

Hereinafter, the embodiment of the present invention will be described, but the present invention is not limited thereto.

As described above, there is a need for a method of manufacturing a semiconductor device in which, in the case of resin sealing, even in the case of eliminating a defective semiconductor element, it is not necessary to calculate the amount of resin required each time to adjust the filling amount, thereby reducing cumbersomeness. The steps of the substrate and the sealing layer can be integrated at the same time.

The present inventors have found the following findings as a result of repeated efforts to achieve the above problems, and have completed the present invention. In other words, after the thermosetting resin having a larger amount than that required for the formation of the sealing layer is placed on the semiconductor element non-mounting substrate, the semiconductor element mounting substrate and the semiconductor element non-mounting substrate are placed on the mold, and the upper mold and the lower mold are placed. By pressurizing and discharging the excess thermosetting resin to the outside of the first cavity, it is not necessary to adjust the filling amount of the resin described above, and the troublesome steps can be reduced, and the substrate and the sealing layer can be surely Integration.

First, for the manufacture of a semiconductor device by the present invention The semiconductor device of the present invention produced by the method will be described.

As shown in FIG. 2, the semiconductor device 20 of the present invention mainly comprises a semiconductor element 7, a semiconductor element mounting substrate 5, a semiconductor element non-mounting substrate 6, and a sealing layer 11 made of a thermosetting resin. The semiconductor element 7 is mounted on the semiconductor element mounting substrate 5. The sealing layer 11 for sealing the semiconductor element 7 is formed between the semiconductor element mounting substrate 5 and the semiconductor element non-mounting substrate 6. Though the thickness of the semiconductor device 20 depends on the thickness of the built-in semiconductor element 7, it is preferable that the semiconductor device is 1 mm or less from the viewpoint of being able to be downsized when the semiconductor device is mounted on a home appliance or the like.

The semiconductor device of the present invention is manufactured by the method of manufacturing a semiconductor device of the present invention described in detail below. Fig. 1 is a flow chart showing a method of manufacturing a semiconductor device of the present invention.

[(A) Preparation Steps]

In the preparation step, the first cavity 4 having the semiconductor element mounting substrate, the semiconductor element non-mounting substrate, and the sealing layer made of a thermosetting resin formed between the substrates is prepared. Forming the mold 3. The molding die 3 is composed of an upper die 1 and a lower die 2.

The forming mold may also have a structure capable of moving in the cavity portion as used for compression molding.

The size and shape of the first cavity 4 are not particularly limited, and may be appropriately configured in accordance with the semiconductor device to be manufactured. The first cavity 4 may be formed in either the upper mold 1 or the lower mold 2, or may be formed in both.

The molding die 3 prepared here may be further provided with a second cavity 9 that is connected to the first cavity 4 through the runner 10.

[(B) Resin mounting step]

In the resin mounting step, the thermosetting resin 8 is placed on the semiconductor element non-mount substrate 6 in an amount larger than the amount required for the formation of the sealing layer 11.

When the thermosetting resin 8 is placed in this manner, even when a part of defective semiconductor elements are removed from the semiconductor element mounting substrate 5, there is no need to reduce the number of semiconductor elements to be excluded as in the conventional method. The amount of the thermosetting resin required was calculated to adjust the filling amount. Further, the troublesome step of filling the thermosetting resin into the first cavity 4 from the outside can be eliminated.

Here, the amount of the resin required for the formation of the sealing layer can be, for example, an amount required when the semiconductor element is not mounted on the semiconductor element mounting substrate 5. In this way, the number of defective semiconductor elements is not formed, and the unfilled void portion is not formed, and the sealing layer can be reliably formed.

The thermosetting resin 8 is preferably placed in an amount of 0.1 to 70 vol% more than the amount required for the formation of the sealing layer.

In this way, when the amount is more than 0.1 vol% more than the required amount, the inside of the first cavity can be surely filled, and if it is filled at 70 vol% or less, the excess thermosetting resin can be suppressed. Increase and suppress the increase in cost.

[(C) Configuration Steps]

In the disposing step, the first cavity is heated from room temperature to 200° C., and the semiconductor element mounting substrate 5 is placed on one of the mold 1 and the lower mold 2 of the molding die 3, and the resin is loaded on the resin. The semiconductor element non-mount substrate 6 on which the thermosetting resin 8 is placed is placed in the other mold. Although the arrangement method is not particularly limited, it can be carried out by suctioning the substrate onto the surfaces of the upper mold 1 and the lower mold 2 by suction.

Here, the mold in which the semiconductor element mounting substrate 5 and the semiconductor element non-mounting substrate 6 are disposed is not particularly limited. FIG. 1(C) shows an example in which the semiconductor element mounting substrate 5 is placed on the upper mold 1.

The semiconductor element mounting substrate 5 and/or the semiconductor element non-mounting substrate 6 can be, for example, a rectangular substrate or a disk-shaped wafer, and an inorganic substrate, a metal substrate, or an organic resin substrate can be used. The semiconductor element mounting substrate 5 is one in which the semiconductor element 7 is placed or formed on the substrate, and the semiconductor element is not mounted on the substrate 6, and the semiconductor element is not placed or formed. In particular, in the case of using an organic resin substrate, an organic resin substrate containing fibers may be used from the viewpoint of controlling the expansion coefficient described later.

The inorganic substrate is represented by a ceramic substrate, a tantalum wafer, or the like, and the metal substrate is represented by a copper or aluminum substrate having an insulating surface. Examples of the organic resin substrate include a BT (bismaleimide triazine) resin substrate, a glass epoxy substrate, and an FRP (fiber reinforced plastic) substrate.

The fibers which can be applied to the fiber-containing organic resin substrate include inorganic fibers such as carbon fibers, glass fibers, quartz glass fibers, and metal fibers, aromatic polyamide fibers, polyimine fibers, and polyamidoximines. An organic fiber such as an amidoxime fiber, further a tantalum carbide fiber, a titanium carbide fiber, a boron fiber, or an alumina fiber. Examples of the fiber-containing organic resin substrate include a fiber-reinforced epoxy resin, a BT resin, or a polyoxymethylene resin substrate. Any of such substrates can be used as long as the insulating properties can be maintained in accordance with the characteristics of the product. The most preferable organic resin substrate containing fibers is preferably a fiberglass, quartz fiber, carbon fiber or the like. Among them, those which are preferably made of glass fiber or quartz glass fiber having high insulation properties are preferred.

The form of the reinforcing fiber as described above is a sheet such as a roving, a cloth, or a non-woven fabric in which the long fiber yarn is drawn in a specific direction, and a laminated body such as a chopped strand mat can be formed. There are no special restrictions.

In the case of any of the metal substrate, the inorganic substrate, or the organic resin substrate, the thickness thereof is preferably 20 μm to 1 mm, more preferably 30 μm to 500 μm, still more preferably 30 μm to 200 μm. When it is 20 μm or more, deformation due to excessively thin can be prevented, and particularly in the case of using an inorganic substrate, cracking during handling can be suppressed. Further, if it is 1 mm or less, it is possible to prevent the semiconductor device from becoming thick.

The semiconductor element mounting substrate and the semiconductor element non-mounting substrate preferably have similar physical properties, and in particular, the linear expansion coefficients of the two substrates are substantially equal to each other or 25 ppm/° C. or less, in particular It is better to be 15 ppm/°C or less. In particular, if the physical properties between the two substrates are similar, the occurrence of warpage of the semiconductor device after the thermosetting resin 8 is formed and sealed can be further suppressed.

In the case where the organic resin substrate is used as the semiconductor element mounting substrate and the semiconductor element non-mounting substrate, at least one of the organic resin substrates is preferably an organic resin substrate of both, which is a linear expansion coefficient at room temperature to 200 ° C. The organic resin substrate of 3 to 25 ppm/° C. is preferable in terms of the reduction in warpage of the manufactured semiconductor device. Further, in the present invention, room temperature means 25 ° C ± 10 ° C (hereinafter, the same).

In the case where an inorganic substrate or an organic resin substrate such as a ruthenium wafer is used as the semiconductor element mounting substrate, the linear expansion coefficient of the inorganic substrate or the organic resin substrate on which the semiconductor element is mounted is at room temperature to 200 ° C. The XY direction is preferably 3 to 15 ppm/°C.

Further, when an organic resin substrate is used as the semiconductor element non-mounting substrate, the linear expansion coefficient of the organic resin substrate is preferably 5 to 25 ppm/° C in the X-Y direction at room temperature to 200 °C. When the organic resin substrate is in such a range, the difference in linear expansion coefficient from the semiconductor element mounting substrate is small, and warpage of the manufactured semiconductor device can be further suppressed. Further, the expansion coefficient of the organic resin substrate is more preferably 5 to 20 ppm/° C., still more preferably 5 to 15 ppm/° C.

From the viewpoint of productivity or ease of handling, the size of the substrate is preferably 20 to 500 mm in length and 100 to 500 mm in width. In addition, in terms of productivity or ease of operation, a circular shape It is preferable that the substrate system has a diameter of about 50 to 400 mm. In the case of such a substrate, it is easy to arrange the semiconductor element on the substrate, or to connect a gold wire or the like by wire bonding.

[(D) Resin discharge step]

In the resin discharge step, the upper mold 1 and the lower mold 2 are pressurized, and the excess thermosetting resin 8 is discharged to the outside of the first cavity 4.

As shown in Fig. 1, for example, in the preparation step (A), the molding die 3 further having the second cavity 9 described above can be prepared, and in the resin discharging step (D), excess thermosetting property is obtained. The resin 8 is discharged to the second cavity 9.

The size and shape of the second cavity 9 and the runner 10 are not particularly limited, and may be appropriately configured depending on the size and shape of the molding die to be used or the amount of the thermosetting resin to be filled. Further, the second cavity 9 may be formed in either the upper mold 1 or the lower mold 2, or may be formed in both.

For example, the total capacity of the first cavity 4 and the second cavity 9 may be larger than the volume of the thermosetting resin 8 placed in the resin mounting step (B). In this way, it is possible to prevent the excess thermosetting resin 8 from overflowing from the forming mold or to further avoid the formation of a burr.

In this case, in the integration step of the subsequent step, in order to reliably seal the inside of the first cavity 4 during the thermosetting resin molding, for example, in the above-described arrangement step (C), 2 in the cavity 9 The temperature is heated to a temperature higher than the temperature in the first cavity 4, and in the resin discharge step (D), the excess thermosetting resin discharged to the second cavity 9 is made larger than that in the first cavity 4. The thermosetting resin hardens earlier. Here, the temperature in the second cavity 9 can be heated to a temperature in the range of 100 to 250 °C.

Alternatively, the thermosetting resin may be molded while pressurizing the inside of the first cavity 4 or the second cavity 9 as will be described later.

[(E) Integration Step]

In the integration step, the thermosetting resin 8 is molded while the upper mold 1 and the lower mold 2 are pressurized, and the semiconductor element mounting substrate 5, the semiconductor element non-mounting substrate 6, and the sealing layer 11 are integrated. In this way, by using two substrates as the front and back surfaces of the semiconductor element and molding and sealing the substrates together with a thermosetting resin, it is possible to produce almost no warpage, and it is excellent in heat resistance and moisture resistance. Semiconductor device. The height of the sealing layer 11 which is the interval between the integrated semiconductor element mounting substrate and the semiconductor element non-mounting substrate is preferably 20 to 1000 μm.

In the integration step, compression molding which is generally used can be utilized. Specifically, in the integration step, the upper mold and the lower mold can be pressurized at room temperature or under heating to compress-form the thermosetting resin 8 placed on the semiconductor element non-mounting substrate 6. In this case, in the resin discharge step (D), the heated upper and lower molds are subjected to mold clamping under pressure, and the excess thermosetting resin 8 is discharged to the first cavity 4. External, making hot hard in this state The resin 8 is thermally hardened.

In the integration step, the thermosetting resin can be molded by pressurizing the inside of the first cavity 4 or the second cavity 9. In this way, the filling of the gap can be improved, and the occurrence of the gap of the sealing layer 11 can be reduced.

In a specific method, air or an inert gas can be pressed into the second cavity by using, for example, an external pump or a cylinder, and the inside of the first cavity can be pressurized.

Alternatively, since the filling property to the gap is improved, the environment in the first cavity can be depressurized, and the thermosetting resin 8 can be molded. The degree of decompression is preferably as low as possible to a degree close to vacuum. For example, the degree of vacuum can be set to 0.01333 to 13.33 KPa (0.1 to 100 Torr).

The thermosetting resin 8 used in the integration step may also be in the form of a composition containing other components. The thermosetting resin is generally suitably used as a solid epoxy resin, a polyoxyxylene resin, or a polysiloxane/epoxy resin composed of an epoxy resin and a polyoxyxylene resin, which is liquidified under heating at 100 ° C or lower. Mixed resin. When a solid thermosetting resin which is liquidified under heating is used, contamination of the production line which occurs when a powdery thermosetting resin is used can be avoided.

As an example of the epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a 3,3', 5,5'-tetramethyl-4,4'-biphenol type ring can be used. Oxygen resin or 4,4'-biphenol type epoxy resin biphenol type epoxy resin, phenol novolak type epoxy resin, cresol novolac type epoxy Resin, bisphenol A novolac type epoxy resin, naphthalene diphenol type epoxy resin, phenol-based methane type epoxy resin, decyl phenol ethane type epoxy resin, and phenol dicyclopentadiene novolac type ring An epoxy resin which is a liquid or solid at room temperature, such as an aromatic ring hydrogenated epoxy resin or an alicyclic epoxy resin. Further, the epoxy resin other than the above may be used in combination of a certain amount or less as needed.

In addition, in the case of sealing the semiconductor element, it is preferable that the halogen ion such as chlorine or the alkali ion such as sodium in the thermosetting resin is extremely reduced. In general, it is preferred to add 10 g of a sample to 50 ml of ion-exchanged water, seal it, and let it stand in an oven at 120 ° C for 20 hours, and then use any of the ions at a temperature of 120 ° C for heating extraction to be 10 ppm or less.

As the curing agent for the epoxy resin, a phenol novolac resin, a variety of amine derivatives, an acid anhydride or an acid anhydride group may be partially opened to form a carboxylic acid. Among them, in order to secure the reliability of the semiconductor device, a phenol novolak resin is preferable.

In order to promote the reaction between the epoxy resin and the curing agent, a metal compound such as an imidazole derivative, a phosphine derivative, an amine derivative or an organoaluminum compound may be used. For example, the mixing ratio of the epoxy resin to the phenol novolak resin is preferably such that the ratio of the epoxy group to the phenolic hydroxyl group is 1:0.8 to 1.3.

In addition, various additives may be blended in the epoxy resin composition as needed. For example, low stress can be added by blending various thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, polyfluorene oxides, and the like. Additives such as agents, waxes, halogen trapping agents, etc., to improve the properties of the resin.

Further, as the polyfluorene oxide resin, a condensed or thermosetting polyoxyxylene resin or the like can be used. Among them, a composition of an addition hardening type polyoxyxylene resin is preferable. The addition-hardening type polyoxymethylene resin composition is preferably an organic polyoxyalkylene having (A) a non-conjugated double bond group (for example, an alkenyl group such as a vinyl group) or (B) an organic hydrogen polycondensate. An addition-type polyoxyxylene resin composition containing an oxane and a (C) platinum-based catalyst as essential components.

Further, the polyfluorene/epoxy hybrid resin may be a copolymer composed of the above epoxy resin and the polyfluorene oxide resin.

As described above, the inorganic filler can be blended in the composition of the epoxy resin, the polyoxynoxy resin, and the polyoxynoxy/epoxy hybrid resin which can be used as the thermosetting resin. Examples of the inorganic filler to be blended include cerium oxide such as molten cerium oxide and crystalline cerium oxide, alumina, tantalum nitride, aluminum nitride, aluminosilicate, and nitrogen. Boron nitride, glass fiber, antimony trioxide, and the like. The average particle diameter or shape of the inorganic filler is not particularly limited. However, in order to ensure the filling property of the narrow portion having a gap of 1 mm or less between the large substrates, the maximum particle diameter is preferably 75 μm or less, and more preferably 50 μm or less. In particular, when the distance between the substrates is 500 μm or less, particles having a maximum of 30 μm or less and having a spherical shape are suitable. When a filler of 75 μm or less is used, the reduction in local fluidity is suppressed, and sufficient filling property can be ensured. The gap is suppressed or not filled.

In particular, the inorganic filler added to the epoxy resin composition may be blended with a coupling agent such as a decane coupling agent or a titanate coupling agent in order to enhance the bonding strength between the epoxy resin and the inorganic filler. Surface processor.

As such a coupling agent, for example, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyldiethoxydecane, β-(3,4-ring) is preferably used. Epoxy-functional alkoxydecane such as oxycyclohexyl)ethyltrimethoxydecane, N-β(aminoethyl)-γ-aminopropyltrimethoxydecane, γ-aminopropyltriethyl An amino functional alkoxy decane such as oxy decane or N-phenyl-γ-aminopropyltrimethoxy decane; or a fluorenyl functional alkoxy decane such as γ-mercaptopropyltrimethoxydecane. Further, the blending amount and surface treatment method of the coupling agent used for the surface treatment are not particularly limited.

In the case of a polyoxyxylene resin composition or a polyoxyxene/epoxy hybrid resin composition, the surface of the inorganic filler may also be treated as described above.

The filling amount of the inorganic filler is 20 to 1300 parts by mass, based on 100 parts by mass of the total amount of the resin in the composition of the epoxy resin composition or the polyoxynoxy resin/polyoxymethylene/epoxy mixed resin, in particular It is preferably 50 to 1000 parts by mass. When the amount is 20 parts by mass or more, sufficient strength can be obtained, and if it is 1300 parts by mass or less, the fluidity due to thickening is less likely to occur, and the filling property can be prevented, and the substrate can be arranged on the substrate. The semiconductor components are completely sealed. In addition, this inorganic fill The material is preferably contained in the range of 15 to 95% by mass, particularly in the range of 30 to 90% by mass.

[(F) cutting step]

According to the above steps, the sealing of the large substrate on which the semiconductor element is mounted can be performed without voids or warping. The substrate integrated by the above method is taken out from the molding die, and usually, it can be post-hardened at a temperature of 150 to 180 ° C for 1 to 4 hours to stabilize the electrical properties or mechanical properties.

Further, after the post-hardening, the semiconductor device 20 can be manufactured by dicing and dicing the substrate using the dicing blade 12 in a usual manner.

The semiconductor device 20 manufactured by the method for manufacturing a semiconductor device described above has a high quality in which the warpage is suppressed and the residual strain is small, and the heat resistance and the moisture resistance are excellent.

[Examples]

Hereinafter, the present invention will be more specifically described by showing examples and comparative examples of the invention, but the invention is not limited thereto.

(Example 1)

An organic resin substrate having a semiconductor element mounted on the following semiconductor element, an organic resin substrate on which a semiconductor element on which a thermosetting epoxy resin is mounted, and a first cavity and a second space as shown in FIG. 1(A) are prepared. Forming mold for the cavity.

Organic resin substrate mounted on a semiconductor element: 100 μm thick and long BT resin substrate of 220 mm and width of 240 mm (linear expansion coefficient: 15 ppm/° C.). A maximum of 144 silicon wafers having a thickness of 300 μm and a thickness of 9 mm can be mounted. Among the 144 bismuth wafers in which the epoxy bonding material was followed by the gold wire and the substrate, 30 defective wafers were excluded.

Organic resin substrate on which semiconductor elements are not mounted: BT resin substrate having a thickness of 100 μm, a length of 214 mm, and a width of 234 mm (linear expansion coefficient: 15 ppm/°C)

Thermosetting epoxy resin: KMC-2520 manufactured by Shin-Etsu Chemical Co., Ltd., specific gravity (25 ° C) 1.93, 64 g (33.2 cm ³ )

The molding die temperature of the compression molding apparatus was set to 150 ° C, and the organic resin substrate mounted on the semiconductor element was attracted to the upper mold by suction. On the other hand, the organic resin substrate on which the semiconductor element on which the thermosetting epoxy resin is mounted is not attracted to the lower mold in the same manner.

Thereafter, the periphery of the mold was sealed, and after the inside of the mold was degassed to a vacuum of 5 kPa, the upper and lower dies were closed. The gap between the substrates was set to 600 μm. Next, a pressure of 20 Kg/cm ² was applied, and excess resin and voids were discharged to the second cavity through the runner. At this time, air is introduced into the second cavity to avoid lowering the pressure on the resin. The forming time was carried out for 3 minutes.

After the molding, the integrated substrate was taken out from the molding die and cooled to room temperature, and then the result of the sealing layer was investigated, and no defects such as insufficient resin or void formation occurred. Further, as a result of measuring the warpage of the substrate, the amount of warpage was 0.1 mm in the longitudinal direction and 0.1 mm in the short side direction. Enter On the other hand, the film was post-hardened at 180 ° C for 4 hours, and the results of warpage were measured in the same manner, and were 0.2 mm in the longitudinal direction and 0.1 mm in the short-side direction, and there was almost no warp.

The substrate was attached to a dicing tape, cut, and soldered to the back surface of 50 singulated semiconductor devices to fabricate a semiconductor device. The results of the respective semiconductor devices were electrically confirmed, and all of them functioned without problems.

The production of the above semiconductor device was repeated 100 times, and the result of the sealing layer was evaluated, and the defect occurrence rate was 0%.

As described above, in the method of manufacturing a semiconductor device of the present invention, even in the case of eliminating a defective semiconductor element, it is not necessary to adjust the amount of resin filling in accordance with the number of defective elements in the formation of the sealing layer, and the substrate can be surely The sealing layer is integrated, and even if the large substrate is sealed, warpage or cracking of the sealed substrate can be suppressed. By forming the thermosetting resin on the semiconductor non-mount substrate in advance, the trouble at the time of the step can be reduced, and contamination of the production line due to the use of the powder can be prevented.

(Example 2)

A molding die in which the first cavity and the second cavity are formed in different blocks as shown in Fig. 3 is prepared. The mold can control the temperature in the first cavity or in the second cavity, respectively. The temperature in the first cavity of the upper mold and the lower mold was set to 150 ° C, and the temperature in the second cavity of the lower mold was set to 180 ° C.

Except when the resin is pressurized, air is not supplied to the second cavity, The same molding step of Example 1 was carried out. As a result, defects such as lack of resin or formation of voids occur. Further, as a result of measuring the warpage of the substrate, the amount of warpage was 0.1 mm in the longitudinal direction and 0.1 mm in the short side direction. Further, post-hardening was carried out at 180 ° C for 4 hours, and as a result of warping, the result was 0.2 mm in the longitudinal direction and 0.1 mm in the short-side direction, and there was almost no warpage.

The substrate was attached to a dicing tape, cut, and soldered to the back surface of 50 singulated semiconductor devices to fabricate a semiconductor device. The results of the respective semiconductor devices were electrically confirmed, and all of them functioned without problems.

The production of the above semiconductor device was repeated 100 times, and the result of the sealing layer was evaluated, and the defect occurrence rate was 0%.

(Comparative Example 1)

An organic resin substrate mounted on a semiconductor element similar to that of the first embodiment, an organic resin substrate on which a semiconductor element is not mounted, a thermosetting resin, and a molding die are prepared. The semiconductor element non-mounting substrate and the semiconductor element mounting substrate are placed in a mold without placing the thermosetting resin on the semiconductor element non-mounting substrate. Specifically, the temperature of the molding die of the compression molding apparatus is set to 150° C., and the organic resin substrate on which the semiconductor element is mounted is attracted to the upper mold by suction, and the organic resin substrate on which the semiconductor element is not mounted is similarly attracted and adsorbed. Lower mold. Thereafter, a powder of a thermosetting epoxy resin (KMC-2520 specific gravity: 1.93) manufactured by Shin-Etsu Chemical Co., Ltd., specifically 64 g, is laminated to the lower base than the amount required for the formation of the sealing layer. On the board, under the same conditions as in Example 1, a semiconductor device was fabricated and evaluated in the same manner.

As a result of investigating the sealing layer of the semiconductor device after the production, no defects such as insufficient resin or void formation occurred. The production of the above semiconductor device was repeated 100 times in the same manner as in Example 1, and as a result of evaluation of the sealing layer, the defect occurrence rate was 0%. However, the method of laminating the thermosetting resin after disposing the semiconductor element non-mounting substrate in the mold as described above is a very complicated operation, and further, since the powder is made of a thermosetting resin, the production line is generated. Pollution is not efficient in terms of productivity.

(Comparative Example 2)

An upper and lower mold for compression molding in which the second cavity is not provided and the first cavity is clamped by the mold is prepared. In the same manner as in the first embodiment, an organic resin substrate mounted on a semiconductor element in which 30 defective wafers were removed was used, and 52.64 g of a powder of a thermosetting epoxy resin (KMC-2520 specific gravity: 1.93 manufactured by Shin-Etsu Chemical Co., Ltd.) was laminated on the lower substrate. . This weighing step of the resin is very cumbersome and therefore hinders the producer.

A semiconductor device was fabricated under the same conditions as in Example 1, and the same evaluation was performed.

As a result of investigating the sealing layer of the manufactured semiconductor device, the occurrence of voids was confirmed. The production of the above-described semiconductor device was repeated 100 times in the same manner as in Example 1, and the result of evaluation of the sealing layer was 30%.

In addition, since the powder is used as the thermosetting resin, the step is changed. It is more complicated than the embodiment, and further, productivity is not efficient due to contamination of the production line.

Further, the present invention is not limited to the above embodiment. The above-described embodiments are exemplified, and have substantially the same structure as the technical idea described in the patent application scope of the present invention, and all of the same effects are included in the technical scope of the present invention.

Claims (11)

A method of manufacturing a semiconductor device using a molding die having an upper mold and a lower mold to manufacture a semiconductor device, comprising: preparing a substrate for mounting a semiconductor element, mounting a substrate for a semiconductor element, and forming the semiconductor device a step of preparing a first cavity in which a sealing layer composed of a thermosetting resin is integrated between the substrates, and a molding die in which a second cavity that is connected to the first cavity is connected to the first cavity; a resin mounting step of placing the thermosetting resin in a larger amount than that required for formation of the sealing layer on the semiconductor element non-mounting substrate; heating the inside of the first cavity from room temperature to 200 ° C The temperature in the second cavity is heated to a temperature higher than a temperature in the first cavity, and the semiconductor element mounting substrate is placed on one of the upper mold and the lower mold of the molding die, and a step of disposing the semiconductor element non-mount substrate on the other mold; pressurizing the upper mold and the lower mold to add excess a resin discharge step of discharging the curable resin to the second cavity and curing the excess thermosetting resin discharged to the second cavity earlier than the thermosetting resin in the first cavity; a step of integrating the semiconductor element mounting substrate, the semiconductor element non-mounting substrate, and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower mold; and The integrated substrate is taken out from the molding die and diced by dicing. The method of manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin is placed in an amount of 0.1 to 70 vol% more than the amount required for formation of the sealing layer in the resin mounting step. The method of manufacturing a semiconductor device according to claim 1, wherein in the integrating step, the thermosetting resin is molded by pressurizing the inside of the first cavity or the second cavity. The method of manufacturing a semiconductor device according to claim 3, wherein the pressurization in the first cavity is performed by pressing air or an inert gas into the second cavity. The method of manufacturing a semiconductor device according to claim 4, wherein the pressurization of the air or the inert gas toward the second cavity is performed by an external pump or a cylinder. The method of manufacturing a semiconductor device according to claim 1, wherein the temperature in the second cavity is heated to a temperature in a range of 100 to 250 °C. The method of manufacturing a semiconductor device according to claim 1 or 6, wherein in the integrating step, the environment in the first cavity is decompressed to form the thermosetting resin. The method of manufacturing a semiconductor device according to claim 7, wherein the environment in the first cavity is depressurized to have a degree of vacuum of 0.01333 to 13.33 KPa. The method of manufacturing a semiconductor device according to claim 1, wherein the molding of the thermosetting resin is performed by compression molding. A method of producing a semiconductor device according to claim 1, wherein any one of an epoxy resin, a polyoxynoxy resin, and a polyoxymethylene/epoxy hybrid resin is used as the thermosetting resin. A semiconductor device manufactured by the method of manufacturing a semiconductor device according to any one of claims 1 to 10.