TWI631657B - Substrate processing system - Google Patents
Substrate processing system Download PDFInfo
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- TWI631657B TWI631657B TW104137799A TW104137799A TWI631657B TW I631657 B TWI631657 B TW I631657B TW 104137799 A TW104137799 A TW 104137799A TW 104137799 A TW104137799 A TW 104137799A TW I631657 B TWI631657 B TW I631657B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本發明之課題在於：抑制供給至基板後的處理液附著於乾燥後的基板，並防止基板污損。為解決上述課題，本發明具備：保持板，於處理基板的基板處理系統，以繞鉛直軸自由旋轉的方式設置；基板保持構件，設置於該保持板，以保持該基板；旋轉驅動部，使保持於該基板保持構件的基板，朝預定的方向旋轉；及處理流體供給部，向保持於該基板保持構件之基板，供給處理液；該基板保持構件，具有：第一側面部，其設置於與基板對向的位置；及第二側面部與第三側面部，鄰接該第一側面部；該第一側面部具有把持部，以把持基板的端面；該第二側面部，在與該第一側面部之間形成尖端部，並具備液流引導部，將供給至基板後的處理液，向基板下方引導。An object of the present invention is to prevent the processing liquid supplied to the substrate from adhering to the dried substrate and prevent the substrate from being soiled. In order to solve the above problems, the present invention includes a holding plate provided on a substrate processing system for processing a substrate so as to freely rotate about a vertical axis; a substrate holding member provided on the holding plate to hold the substrate; and a rotation driving unit for A substrate held by the substrate holding member is rotated in a predetermined direction; and a processing fluid supply unit supplies a processing liquid to the substrate held by the substrate holding member; the substrate holding member includes a first side surface portion provided at A position opposite to the substrate; and a second side surface portion and a third side surface portion adjacent to the first side surface portion; the first side surface portion has a holding portion to hold the end surface of the substrate; the second side surface portion is in contact with the first side surface portion; A tip portion is formed between one side face portion and a liquid flow guide portion is provided to guide the processing liquid supplied to the substrate below the substrate.
Description
本發明所揭露之實施態樣，係關於基板處理系統。Embodiments disclosed in the present invention relate to a substrate processing system.
周知，以往藉由對於半導體晶圓、玻璃基板等基板供給處理液，以處理基板之基板處理系統。例如，專利文獻1揭示基板處理系統，其具備「旋轉台」及「附設於旋轉台以把持基板外側之基板保持構件」，並向基板表面供給藥液或純水等處理液。 ﹝先前技術文獻﹞ ﹝專利文獻﹞It is well known that a substrate processing system that processes substrates by supplying a processing liquid to a substrate such as a semiconductor wafer or a glass substrate. For example, Patent Document 1 discloses a substrate processing system that includes a "rotary stage" and a "substrate holding member attached to the rotary stage to hold the outside of the substrate" and supplies a treatment liquid such as a chemical solution or pure water to the substrate surface. ﹝ Prior art literature ﹞ ﹝ Patent literature ﹞
﹝專利文獻1﹞ 日本特開2011-071477號公報﹝ Patent Document 1 ﹞ Japanese Patent Application Laid-Open No. 2011-071477
﹝發明所欲解決之問題﹞﹞ Problems to be solved by the invention ﹞
然而，習知的基板處理系統中，供給至旋轉之基板的處理液，由於離心力而向基板外方甩脫時，與基板保持構件衝突，並向基板上方飛散。向基板上方飛散之處理液，有附著於乾燥後的基板而污損基板之虞。 ﹝解決問題之方式﹞However, in the conventional substrate processing system, when the processing liquid supplied to the rotating substrate is shaken out of the substrate due to the centrifugal force, it collides with the substrate holding member and scatters above the substrate. The processing liquid scattered above the substrate may adhere to the dried substrate and may contaminate the substrate. ﹝ Solutions ﹞
為了解決上述課題，本發明提供一基板處理系統，其特徵為具備：保持板，於處理基板之基板處理系統，以可繞鉛直軸自由旋轉的方式設置；基板保持構件，設置於該保持板，以保持該基板；旋轉驅動部，使保持於該基板保持構件之基板，朝預定的方向旋轉；及處理流體供給部，向保持於該基板保持構件之基板，供給處理液；該基板保持構件，具有：第一側面部，設置於與基板對向的位置；及第二側面部與第三側面部，鄰接該第一側面部；該第一側面部具有把持部，以把持基板的端面；該第二側面部，在與該第一側面部之間形成尖端部，並具備液流引導部，將供給至基板後之處理液向基板下方引導。 ﹝發明之效果﹞In order to solve the above-mentioned problem, the present invention provides a substrate processing system, comprising: a holding plate, a substrate processing system for processing a substrate, which is provided to be rotatable freely about a vertical axis; To hold the substrate; to rotate the driving unit to rotate the substrate held by the substrate holding member in a predetermined direction; and to supply a processing fluid to the substrate held by the substrate holding member to supply a processing liquid; the substrate holding member, The first side surface portion is provided at a position opposite to the substrate; and the second side surface portion and the third side surface portion are adjacent to the first side surface portion; the first side surface portion has a holding portion to hold the end surface of the substrate; The second side surface portion has a tip portion formed between the second side surface portion and the first side surface portion, and includes a liquid flow guide portion to guide the processing liquid supplied to the substrate below the substrate. ﹞ Effects of invention ﹞
本發明可抑制「供給至基板後的處理液，附著於乾燥後的基板」，並可防止基板污損。The present invention can suppress "the processing liquid supplied to the substrate and adhere to the substrate after drying", and can prevent the substrate from being soiled.
圖1為顯示依本實施態樣之基板處理系統的概略構成之圖式。以下，為了使位置關係明確，規定互相垂直的X軸、Y軸及Z軸，並將Z軸正方向定為鉛直向上的方向。FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to this embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are perpendicular to each other are defined, and the positive direction of the Z-axis is set to be a vertical upward direction.
如圖1所示，基板處理系統1包含「搬入出站2」及「處理站3」。搬入出站2與處理站3係鄰接設置。As shown in FIG. 1, the substrate processing system 1 includes “in / out station 2” and “processing station 3”. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.
搬入出站2包含「載體載置部11」及「搬送部12」。在載體載置部11載置複數之載體C，該複數之載體C以水平狀態收容複數片基板，本實施態樣中，係半導體晶圓(以下稱作「晶圓W」)。The loading / unloading station 2 includes a "carrier placing section 11" and a "conveying section 12". A plurality of carriers C are placed on the carrier mounting portion 11, and the plurality of carriers C accommodates a plurality of substrates in a horizontal state. In this embodiment, they are semiconductor wafers (hereinafter referred to as “wafer W”).
搬送部12鄰接載體載置部11而設置，於其內部具備「基板搬送裝置13」及「傳遞部14」。基板搬送裝置13具備晶圓固持機構，以固持晶圓W。又，基板搬送裝置13能向水平方向及鉛直方向移動，並能以鉛直軸為中心旋轉；使用晶圓固持機構，在載體C與傳遞部14之間搬送晶圓W。The transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a "substrate transfer device 13" and a "transfer unit 14" therein. The substrate transfer device 13 includes a wafer holding mechanism to hold the wafer W. In addition, the substrate transfer device 13 can move in the horizontal and vertical directions and can rotate about the vertical axis. The wafer holding mechanism is used to transfer the wafer W between the carrier C and the transfer unit 14.
處理站3係鄰接搬送部12而設置。處理站3包含「搬送部15」及「複數之處理單元16」。複數之處理單元16，係於搬送部15的兩側並列而設置。The processing station 3 is installed adjacent to the conveyance part 12. The processing station 3 includes a "conveyance unit 15" and a "plurality of processing units 16". A plurality of processing units 16 are provided in parallel on both sides of the conveyance unit 15.
於搬送部15的內部，具備「基板搬送裝置17」。基板搬送裝置17具備晶圓固持機構，以固持晶圓W。又，基板搬送裝置17能向水平方向及鉛直方向移動，並能以鉛直軸為中心旋轉；使用晶圓固持機構，在傳遞部14與處理單元16之間搬送晶圓W。A "substrate transfer device 17" is provided inside the transfer unit 15. The substrate transfer device 17 includes a wafer holding mechanism to hold the wafer W. In addition, the substrate transfer device 17 can move in the horizontal and vertical directions, and can rotate about the vertical axis. The wafer holding mechanism is used to transfer the wafer W between the transfer unit 14 and the processing unit 16.
處理單元16，對於由基板搬送裝置17搬送之晶圓W，進行既定的基板處理。The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
又，基板處理系統1包含「控制裝置4」。控制裝置4例如為電腦，其包含「控制部18」及「儲存部19」。在儲存部19儲存「控制於基板處理系統1中執行的各種處理之程式」。控制部18，藉由讀取並執行儲存於儲存部19的程式，以控制基板處理系統1的動作。The substrate processing system 1 includes a "control device 4". The control device 4 is, for example, a computer, and includes a “control section 18” and a “storage section 19”. The storage unit 19 stores a "program for controlling various processes executed in the substrate processing system 1". The control unit 18 reads and executes a program stored in the storage unit 19 to control the operation of the substrate processing system 1.
又，關聯的程式，係記錄於可由電腦讀取的儲存媒體，亦可自儲存媒體安裝至控制裝置4之儲存部19。作為可由電腦讀取的儲存媒體，例如包含硬碟(HD)、軟性磁碟(FD)、光碟(CD)、磁光碟(MO)及記憶卡等。The associated program is recorded in a storage medium that can be read by a computer, and can also be installed from the storage medium to the storage unit 19 of the control device 4. The computer-readable storage medium includes, for example, a hard disk (HD), a flexible magnetic disk (FD), an optical disk (CD), a magneto-optical disk (MO), a memory card, and the like.
如上述構成之基板處理系統1中，首先，搬入出站2之基板搬送裝置13，從載置於載體載置部11之載體C，將晶圓W取出，並將取出之晶圓W載置於傳遞部14。載置於傳遞部14之晶圓W，係藉由處理站3之基板搬送裝置17，從傳遞部14取出，並向處理單元16搬入。In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 is carried in and out of the station 2, and the wafer W is taken out from the carrier C placed on the carrier placement section 11, and the taken out wafer W is placed于 转 部 14。 In the transmission section 14. The wafer W placed on the transfer unit 14 is taken out from the transfer unit 14 by the substrate transfer device 17 of the processing station 3 and is carried into the processing unit 16.
向處理單元16搬入之晶圓W，在利用處理單元16處理後，藉由基板搬送裝置17從處理單元16搬出，並載置於傳遞部14。又，載置於傳遞部14之處理完畢的晶圓W，藉由基板搬送裝置13，返回載體載置部11之載體C。After being processed by the processing unit 16, the wafer W carried into the processing unit 16 is removed from the processing unit 16 by the substrate transfer device 17 and placed on the transfer unit 14. The processed wafer W placed on the transfer unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.
如圖2所示，處理單元16包含：腔室20、基板固持機構30、處理流體供給部40及回收杯50。As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.
腔室20係用來收容：基板固持機構30、處理流體供給部40及回收杯50。在腔室20的頂棚部，設有「風機過濾機組(Fan Filter Unit，FFU)21」。風機過濾機組21，於腔室20內形成降流。The chamber 20 is used to accommodate: a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50. A "Fan Filter Unit (FFU) 21" is provided in the ceiling portion of the chamber 20. The fan filter unit 21 forms a downflow in the chamber 20.
基板固持機構30包含：固持部31、支柱部32及驅動部33。固持部31，將晶圓W水平固持。支柱部32為在鉛直方向延伸的構件，其基端部係藉由驅動部33可旋轉地支持，於其前端部將固持部31水平支持。驅動部33，使支柱部32繞著鉛直軸旋轉。關聯的基板固持機構30，藉由使用驅動部33而使支柱部32旋轉，以使支持於支柱部32的固持部31旋轉，藉此，使固持於固持部31的晶圓W旋轉。The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The pillar portion 32 is a member extending in the vertical direction. The base end portion is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at the front end portion thereof. The driving section 33 rotates the pillar section 32 about a vertical axis. The related substrate holding mechanism 30 rotates the support portion 32 by using the driving portion 33 to rotate the holding portion 31 supported by the support portion 32, thereby rotating the wafer W held by the holding portion 31.
處理流體供給部40對晶圓W供給處理流體。處理流體供給部40連接於處理流體供給源70。The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.
回收杯50係配置成包圍固持部31，藉由固持部31的旋轉，集取自晶圓W飛散的處理液。在回收杯50的底部，形成排液口51；藉由回收杯50集取之處理液，自關聯的排液口51向處理單元16的外部排出。又，在回收杯50的底部形成排氣口52，以自風機過濾機組21將供給的氣體向處理單元16的外部排出。The recovery cup 50 is arranged so as to surround the holding portion 31, and the processing liquid taken from the wafer W is collected by the rotation of the holding portion 31. A drain port 51 is formed at the bottom of the recovery cup 50; the processing liquid collected by the recovery cup 50 is discharged from the associated drain port 51 to the outside of the processing unit 16. An exhaust port 52 is formed in the bottom of the recovery cup 50 to discharge the supplied gas from the fan filter unit 21 to the outside of the processing unit 16.
關於基板保持機構30之各構成要素的細節，由於可使用公知的(例如記載於日本特開2011-071747)基板保持機構，故省略詳細說明。As for the details of each component of the substrate holding mechanism 30, a known substrate holding mechanism (for example, described in Japanese Patent Application Laid-Open No. 2011-071747) can be used, and thus detailed description is omitted.
接著，就保持部31之具體構成，參照圖3說明。Next, a specific configuration of the holding unit 31 will be described with reference to FIG. 3.
保持部31，具備：圓板狀的保持板34，可繞鉛直軸向既定方向旋轉；基板保持構件35，自側方保持晶圓W；及升降銷板23，具有自下方支持晶圓W之升降銷22。進而，保持部31具備第二處理流體供給部60，設置該第二處理流體供給部60，以分別貫通「形成於保持板34的中心部分之貫通孔34a」及「形成升降銷板23的中心部分之貫通孔23a」。第二處理流體供給部60，將純水或藥液等處理液，供給至由保持板34保持之晶圓W的背面。The holding portion 31 includes a circular plate-shaped holding plate 34 that can be rotated around a predetermined direction in the vertical axis, a substrate holding member 35 that holds the wafer W from the side, and a lifting pin plate 23 that supports the wafer W from below. Lifting pin 22. Further, the holding portion 31 includes a second processing fluid supply portion 60 which is provided so as to penetrate the "through-hole 34a formed in the center portion of the holding plate 34" and "the center of the lift pin plate 23" Part of the through hole 23a ″. The second processing fluid supply unit 60 supplies a processing liquid such as pure water or a chemical solution to the back surface of the wafer W held by the holding plate 34.
於保持板34外圍具備貫通孔34b。即使處理液從「升降銷板23與保持板34之間隙」侵入，處理液係由此貫通孔34b排出。A through hole 34b is provided on the periphery of the holding plate 34. Even if the processing liquid intrudes from the "gap between the lift pin plate 23 and the holding plate 34", the processing liquid is discharged through the through hole 34b.
如圖4(a)、(b)所示，基板保持構件35，具備：柱狀之第一本體部36；及柱狀之第二本體部36’，設置於該第一本體部36的上部。第一本體部36於俯視時呈略四角形。又，第二本體部36’於俯視時呈略三角形。而第二本體部36’在與晶圓W對向的位置，具備第一側面部36a。第一側面部36a，具備於其表面把持晶圓W的端面之把持部35a。進而，第二本體部36’，具備鄰接第一側面部36a之第二側面部36b、第三側面部36c及頂面部36d。第二側面部36b，係鄰接「第一側面部36a之晶圓W(基板保持構件35)的旋轉方向側」而形成，在與第一側面部36a之間，形成銳角之尖端部37。而在第二側面部36b的表面，具備後述之液流引導部38。尖端部37，朝向晶圓W(基板保持構件35)的旋轉方向，設置為尖銳狀。As shown in FIGS. 4 (a) and 4 (b), the substrate holding member 35 includes a columnar first body portion 36 and a columnar second body portion 36 ′ provided on the upper portion of the first body portion 36. . The first body portion 36 is substantially quadrangular in a plan view. The second body portion 36 'has a substantially triangular shape in a plan view. The second body portion 36 'includes a first side surface portion 36a at a position facing the wafer W. The first side surface portion 36a includes a gripping portion 35a that grips an end surface of the wafer W on its surface. Further, the second body portion 36 'includes a second side surface portion 36b, a third side surface portion 36c, and a top surface portion 36d adjacent to the first side surface portion 36a. The second side surface portion 36b is formed adjacent to the “rotation direction side of the wafer W (substrate holding member 35) of the first side surface portion 36a”, and forms an acute-angled tip portion 37 with the first side surface portion 36a. The surface of the second side surface portion 36b is provided with a liquid flow guide portion 38 described later. The tip portion 37 is sharpened toward the rotation direction of the wafer W (substrate holding member 35).
把持部35a，自第一側面部36a的表面，向晶圓W(基板保持構件35)的旋轉中心方向突出，並配置於尖端部37附近，以其頂面支持晶圓W。把持部35a，比第一側面部36a的幅寬狹窄，而愈靠近「突出的前端」愈低，在把持部35a的頂面支持晶圓W的周緣部。藉此，能極度將與晶圓W之接觸部分變小，並能抑制處理液殘留在接觸部分，而成為顆粒。The holding portion 35a protrudes from the surface of the first side surface portion 36a in the direction of the rotation center of the wafer W (substrate holding member 35), is disposed near the tip portion 37, and supports the wafer W by its top surface. The width of the gripping portion 35a is narrower than the width of the first side surface portion 36a, and the lower the distance from the "protruding front end", the lower edge of the gripping portion 35a supports the peripheral portion of the wafer W on the top surface. Thereby, the contact portion with the wafer W can be extremely small, and the processing liquid can be suppressed from remaining on the contact portion and becoming particles.
第二側面部36b具備引導部38，該引導部38將處理液向晶圓W下方引導。引導部38具備底面38a，該底面38a自第二側面部36b的表面突出，該底面38a為引導部38中向下的面。然後，在底面38a的表面引導處理液。亦即，底面38a，於靠近第一側面部36a之一側，係配置在比「支持於把持部35a之晶圓W的頂面」更為上方；而於自第一側面部36a遠離之一側(第三側面部36c側)，係配置在比「支持於把持部35a之晶圓W的頂面及底面」更為下方；成為愈自晶圓W遠離，愈向下方下降之傾斜面。從旋轉中之晶圓W甩脫的處理液，係藉由液流引導部38向晶圓W下方引導，而向回收杯50流動。藉由回收杯50集取的處理液，自排液口51排出。此外，若從第一側面部36a側觀看，第一側面部36a的端部下側係成為缺口的形狀，因此，處理液自此缺口之部分向引導部38的底面38a排出。The second side surface portion 36 b includes a guide portion 38 that guides the processing liquid below the wafer W. The guide portion 38 includes a bottom surface 38 a protruding from the surface of the second side surface portion 36 b, and the bottom surface 38 a is a downward surface of the guide portion 38. Then, the processing liquid is guided on the surface of the bottom surface 38a. That is, the bottom surface 38a is disposed above one side of the first side surface portion 36a above the "top surface of the wafer W supported by the holding portion 35a"; and one side away from the first side surface portion 36a The side (the third side surface portion 36c side) is disposed below the "top and bottom surfaces of the wafer W supported by the holding portion 35a"; it becomes an inclined surface that moves downward from the wafer W and decreases downward. The processing liquid spun off from the wafer W being rotated is guided below the wafer W by the liquid flow guide 38 and flows into the recovery cup 50. The treatment liquid collected in the recovery cup 50 is discharged from the liquid discharge port 51. In addition, when viewed from the first side surface portion 36 a side, the lower side of the end portion of the first side surface portion 36 a has a notch shape. Therefore, the treatment liquid is discharged from the notch portion to the bottom surface 38 a of the guide portion 38.
接著，針對由這般構成組成之處理單元16的動作加以說明。首先，升降銷板23藉由升降驅動部(未圖式)，位移到上方位置。接著，藉由基板搬送裝置17，將晶圓W從處理單元16的外部搬送到處理單元16，並將此晶圓W載置於升降銷板23的升降銷22上。Next, the operation of the processing unit 16 having such a configuration will be described. First, the lift pin plate 23 is moved to an upper position by a lift drive unit (not shown). Next, the wafer W is transferred from the outside of the processing unit 16 to the processing unit 16 by the substrate transfer device 17, and the wafer W is placed on the lifting pins 22 of the lifting pin plate 23.
升降銷板23下降，將晶圓W傳遞到保持部31，並藉由基板保持構件35保持。The lift pin plate 23 is lowered, and the wafer W is transferred to the holding portion 31 and held by the substrate holding member 35.
接著，在晶圓W旋轉之狀態下，從處理流體供給部40，向晶圓W的表面供給純水或藥液等處理液，並在晶圓W的表面進行既定之液處理。此外，在從處理流體供給部40供給處理液時，亦可自第二處理流體供給部60，向晶圓W的背面供給處理液。Next, while the wafer W is rotating, a processing liquid such as pure water or a chemical solution is supplied from the processing fluid supply unit 40 to the surface of the wafer W, and a predetermined liquid treatment is performed on the surface of the wafer W. When the processing liquid is supplied from the processing fluid supply unit 40, the processing liquid may be supplied from the second processing fluid supply unit 60 to the back surface of the wafer W.
供給至旋轉中之晶圓W的表面之處理液，藉由離心力向晶圓W的周緣部流動，而向回收杯50流動。由於在晶圓W的周緣部存在基板保持構件35，故有一部分的處理液於基板保持構件35衝突而向晶圓W的上方飛散之虞。然而，由於在本實施態樣之基板保持構件35，設置有液流引導部38，故藉由液流引導部，處理液38不會向晶圓W的上方飛散，而會被向下方引導。被引導到晶圓下方的處理液，向回收杯50流動。藉由回收杯50集取的處理液，自排液口51排出。The processing liquid supplied to the surface of the rotating wafer W flows to the peripheral portion of the wafer W by centrifugal force, and flows to the recovery cup 50. Since the substrate holding member 35 is present at the peripheral portion of the wafer W, a part of the processing liquid may collide with the substrate holding member 35 and may be scattered upwardly of the wafer W. However, since the substrate holding member 35 according to the present embodiment is provided with the liquid flow guide portion 38, the liquid flow guide portion prevents the processing liquid 38 from being scattered upwards of the wafer W, and is guided downward. The processing liquid guided below the wafer flows into the recovery cup 50. The treatment liquid collected in the recovery cup 50 is discharged from the liquid discharge port 51.
進行既定時間晶圓W之清洗處理後，停止供給處理液，並藉由使晶圓W旋轉，來進行晶圓W之乾燥處理。若乾燥處理結束，升降驅動部(未圖式)使升降銷22從下方位置移動到上方位置。After the wafer W is cleaned for a predetermined period of time, the supply of the processing liquid is stopped, and the wafer W is dried to rotate the wafer W. When the drying process is completed, the lift driving unit (not shown) moves the lift pin 22 from the lower position to the upper position.
升降銷板23移動到上方位置後，藉由基板搬送裝置17，從升降銷22取出「載置於升降銷22上的晶圓W」，向基板處理裝置的外部搬出。如此，完成一連串對晶圓W之液處理。After the lifting pin plate 23 is moved to the upper position, the "wafer W mounted on the lifting pin 22" is taken out from the lifting pin 22 by the substrate transfer device 17, and is carried out to the outside of the substrate processing apparatus. In this way, a series of liquid processing on the wafer W is completed.
以下，針對藉由液流引導部38而獲得之飛散防止效果，參照圖5說明。Hereinafter, the scattering prevention effect obtained by the liquid flow guide portion 38 will be described with reference to FIG. 5.
若向旋轉中之晶圓W供給處理液，由於處理液與晶圓W之摩擦力，在晶圓W的旋轉方向，處理液會如同描繪曲線般流去，而於尖端部37衝突。然而，由於在第二側面部36b設置有液流引導部38，故藉由旋轉之液流引導部38，將處理液強制向晶圓W的下方引導，可以防止向晶圓W的上方飛散。因此，可防止供給至晶圓W後之處理液，附著於乾燥後之晶圓W，並可防止污損晶圓W。When the processing liquid is supplied to the rotating wafer W, the processing liquid flows in the direction of the rotation of the wafer W due to the friction between the processing liquid and the wafer W, and the processing liquid flows as if drawn in a curve, and collides with the tip portion 37. However, since the liquid flow guide portion 38 is provided on the second side surface portion 36b, the rotating liquid flow guide portion 38 is used to force the processing liquid to be guided below the wafer W, and it is possible to prevent the liquid from being scattered upward from the wafer W. Therefore, the processing liquid supplied to the wafer W can be prevented from adhering to the dried wafer W, and the wafer W can be prevented from being stained.
液流引導部38之向下的面，亦即底面38a，於靠近第一側面部36a一側，係配置為比「支持f於把持部35a之晶圓W」更為上方，而於自第一側面部36a遠離一側(第三側面部36c側)，係配置為比「支持於把持部35a之晶圓W」更為下方。藉此，處理液變得易於進入液流引導部38，可防止處理液向晶圓W上方飛散。因此，可防止供給至晶圓W後之處理液，附著於乾燥後的晶圓W，並可防止污損晶圓W。The downward surface of the liquid flow guide portion 38, that is, the bottom surface 38a, is arranged above the "wafer W supporting f on the holding portion 35a" on the side close to the first side surface portion 36a, and The one side surface portion 36a is farther away from one side (the third side surface portion 36c side), and is arranged below the "wafer W supported by the holding portion 35a". This makes it easier for the processing liquid to enter the liquid flow guide 38 and prevents the processing liquid from being scattered upwards of the wafer W. Therefore, the processing liquid supplied to the wafer W can be prevented from adhering to the dried wafer W, and the wafer W can be prevented from being stained.
又，液流引導部38具備銳角的尖端部37。藉此，在尖端部37發生衝突之處理液所承受的衝突能量變小，處理液難以變為液滴。處理液可以不會變為液滴而保持液流的狀態，藉由液流引導部38向晶圓W下方引導。藉此，可降低處理液向晶圓W上方飛散的風險。因此，可防止供給至晶圓W後的處理液附著於乾燥後的晶圓W，並可防止污損晶圓W。The liquid flow guide portion 38 includes an acute-angled tip portion 37. Thereby, the collision energy received by the treatment liquid which collided at the tip part 37 becomes small, and it becomes difficult for a treatment liquid to become a droplet. The processing liquid may be kept in a liquid flow state without becoming a droplet, and may be guided below the wafer W by the liquid flow guide portion 38. Thereby, the risk that the processing liquid is scattered above the wafer W can be reduced. Therefore, the processing liquid supplied to the wafer W can be prevented from adhering to the dried wafer W, and the wafer W can be prevented from being stained.
進而，當將處理液供給至晶圓W背面之情形，供給至背面的處理液之一部分，會沿把持部35a的斜面流動，而有飛散至晶圓W上方之虞。然而，即便供給至晶圓W後的處理液，沿把持部35a的斜面流動，仍可藉由液流引導部38將處理液向晶圓W下方引導。因此，處理液不會向晶圓W上方飛散，可防止供給至晶圓W後的處理液，附著於乾燥後的晶圓W。又，把持部35a的幅寬，係比第一側面部36a的幅寬更為狹窄。因此，可減少沿把持部35a的斜面流動之處理液的量，而可防止污損晶圓W。Further, when the processing liquid is supplied to the back surface of the wafer W, a part of the processing liquid supplied to the back surface may flow along the inclined surface of the holding portion 35 a and may be scattered above the wafer W. However, even if the processing liquid supplied to the wafer W flows along the inclined surface of the holding portion 35 a, the processing liquid can be guided downward by the liquid flow guide portion 38. Therefore, the processing liquid does not scatter above the wafer W, and the processing liquid supplied to the wafer W can be prevented from adhering to the dried wafer W. The width of the grip portion 35a is narrower than the width of the first side surface portion 36a. Therefore, the amount of the processing liquid flowing along the inclined surface of the holding portion 35a can be reduced, and the wafer W can be prevented from being stained.
基板保持構件35，具有：柱狀的第一本體部36，於俯視時呈略四角形；及柱狀的第二本體部36’，自第一本體部36延續設置，於俯視時呈略三角形。第二本體部36’，其側面係由第一側面部36a、第二側面部36b及第三側面部36c構成。又，第一側面部36a與第三側面部36c，係與第一本體部36的側面延續而形成，具有液流引導部38之第二側面部36b，係沿第一本體部36的對角線形成。藉此，以簡易的構造構成液流引導部38。The substrate holding member 35 includes: a columnar first body portion 36 that is slightly quadrangular in plan view; and a columnar second body portion 36 'that is continued from the first body portion 36 and is slightly triangular in plan view. The second body portion 36 'has a side surface composed of a first side surface portion 36a, a second side surface portion 36b, and a third side surface portion 36c. The first side surface portion 36 a and the third side surface portion 36 c are formed to continue from the side surface of the first body portion 36, and the second side surface portion 36 b having the liquid flow guide portion 38 is located along the diagonal of the first body portion 36. Line formation. Thereby, the liquid flow guide part 38 is comprised with a simple structure.
此外，本實施態樣之基板處理系統，不限定於上述態樣，可進行各種改變。In addition, the substrate processing system of this embodiment is not limited to the above-mentioned embodiment, and various changes can be made.
例如，設置於基板保持構件35之液流引導部38，亦可為溝狀；其剖面形狀，亦可為凹型、V字型或U字型。For example, the liquid flow guide portion 38 provided on the substrate holding member 35 may be groove-shaped, and its cross-sectional shape may be concave, V-shaped, or U-shaped.
又，第二本體部36’，亦可於俯視時呈四角形，亦可為梯形、菱形或平行四邊形。In addition, the second body portion 36 'may be quadrangular in plan view, or may be trapezoidal, diamond, or parallelogram.
又，如圖6所示，基板保持構件135，將保持晶圓W用之複數(在此為兩個)爪部136、136’，於晶圓W的旋轉方向隔著間隔設置。在爪部136、136’，分別形成有「第一側面部136a、136’a」、「第二側面部136b、136’b」及「第三側面部136c、136’c」。在「第一側面部136a、136’a」的表面，與晶圓W抵接之「把持部135a、135’a」，以凹狀形成。「把持部135a、135’a」中，以凹狀彎曲之部分(最深部)與晶圓W的外圍端緣接觸，以保持晶圓W。「第二側面部136b、136’b」中，在與「第一側面部136a、136’a」之間形成「尖端部137、137’」，向晶圓W下方引導處理液之「液流引導部138、138’」形成於表面。此外，雖然在上述基板保持部135，於「第二側面部136b、136’b」與「第三側面部136c、136’c」之間形成有「第4側面部136d、136’d」，然而，亦可將「第二側面部136b、136’b的後端」與「第三側面部136c、136’c的後端」連接，而設定為沒有「第4側面部136d、136’d」之形狀。As shown in FIG. 6, the substrate holding member 135 is provided with a plurality of (two here) claw portions 136, 136 'for holding the wafer W at intervals in the rotation direction of the wafer W. In the claw portions 136 and 136 ', "first side surface portions 136a, 136'a", "second side surface portions 136b, 136'b", and "third side surface portions 136c, 136'c" are formed, respectively. On the surface of the "first side surface portions 136a, 136'a", "holding portions 135a, 135'a" which are in contact with the wafer W are formed in a concave shape. In the "holding portions 135a, 135'a", the concavely curved portion (the deepest portion) is in contact with the peripheral edge of the wafer W to hold the wafer W. In the "second side surface portions 136b and 136'b", "tip portions 137 and 137 '" are formed between the "second side surface portions 136a and 136'a" and the "fluid flow of the processing liquid is guided below the wafer W. The guide portions 138, 138 '"are formed on the surface. In addition, in the substrate holding portion 135, a "fourth side surface portion 136d, 136'd" is formed between the "second side surface portion 136b, 136'b" and the "third side surface portion 136c, 136'c", However, the “rear end of the second side portion 136b, 136'b” and the “rear end of the third side portion 136c, 136'c” may be connected, and the “fourth side portion 136d, 136'd” may be omitted. "Shape.
如此，由於在基板保持構件135設置有保持晶圓W之複數個爪部136、136’，可使沿晶圓W流動之處理液所衝突的面積(把持部135a、135’a的面積)變小，而可抑制處理液飛散。特別是，藉由將把持部135a、135’a形成凹狀，可抑制處理液向上方飛散。又，可將把持部135a、135’a作為曲面，進一步抑制處理液飛散。As described above, since the substrate holding member 135 is provided with a plurality of claw portions 136 and 136 'for holding the wafer W, the area (area of the holding portions 135a, 135'a) where the processing liquid flowing along the wafer W collides can be changed. It is small and suppresses scattering of the processing liquid. In particular, by forming the holding portions 135a, 135'a in a concave shape, it is possible to suppress the processing liquid from scattering upward. Further, the holding portions 135a, 135'a can be curved surfaces, and the scattering of the processing liquid can be further suppressed.
上述基板保持部135中，在所有「爪部136、136’」，形成有「第一側面部136a、136’a」、「第二側面部136b、136’b」及「第三側面部136c、136’c」。藉此，可藉由各「爪部136、136’」之「液流引導部138、138’」，將處理液向晶圓W下方良好地引導。此外，亦可在任一「爪部136、136’」，形成「第一側面部136a、136’a」、「第二側面部136b、136’b」及「第三側面部136c、136’c」。又，雖然在上述基板保持部135，係將「爪部136的第三側面部136c」與「爪部136’的第二側面部136’b」平行形成，並在「爪部136、136’」之間形成平行的間隔，然而，亦可藉由形成愈向後方「爪部136、136’」之間逐漸寬廣的間隔，而設定為使處理液平順流動。雖然在上述基板保持部135，形成有兩個「爪部136、136’」，但亦可形成三個以上。「爪部136、136’」的間隔係設定為：「爪部136、136’」整體的幅寬(於前視基板保持部135時，從最右端的爪部136之第一側面部136a的右端，到最左端的爪部136’之第一側面部136’a的左端之距離)變為比形成於晶圓W的定位用缺口(凹口)的幅寬更大。因此，形成於任一「爪部136、136’」之「把持部135a、135’a」，會抵接於晶圓W的外圍端緣。從而，可防止任一「把持部135a、135’a」夾在晶圓W的凹口而產生晶圓W之把持不良。In the aforementioned substrate holding portion 135, "first side surface portions 136a, 136'a", "second side surface portions 136b, 136'b", and "third side surface portions 136c" are formed in all of the "claw portions 136, 136 '". , 136'c. " Thereby, the processing liquid can be guided well below the wafer W by the "liquid flow guide portions 138, 138 '" of each of the "claw portions 136, 136'". In addition, the "first side portions 136a, 136'a", the "second side portions 136b, 136'b", and the "third side portions 136c, 136'c" may be formed in any of the "claw portions 136, 136 '". ". In addition, in the substrate holding portion 135, the "third side surface portion 136c of the claw portion 136" is formed in parallel with the "second side surface portion 136'b of the claw portion 136 '", and the "claw portions 136, 136'" ", A parallel interval is formed between them. However, it is also possible to set the treatment liquid to flow smoothly by forming a gradually wider interval between the" claw portions 136, 136 '"toward the rear. Although two "claw portions 136, 136 '" are formed in the substrate holding portion 135, three or more may be formed. The distance between the "claw portions 136 and 136 '" is set to the width of the entire "claw portions 136 and 136'" (when looking at the substrate holding portion 135 from the first side portion 136a of the rightmost claw portion 136). The distance from the right end to the left end of the first side surface portion 136'a of the leftmost claw portion 136 'is larger than the width of the positioning notch (notch) formed in the wafer W. Therefore, the "holding portions 135a, 135'a" formed in any of the "claw portions 136, 136 '" abut on the peripheral edge of the wafer W. Accordingly, it is possible to prevent any of the "grip portions 135a, 135'a" from being sandwiched between the notches of the wafer W and causing a poor grip of the wafer W.
上述基板保持部135，係將與「爪部136、136’」下側的晶圓W對向之一面(前面)，作為「下方向晶圓W外側傾斜」之傾斜面。藉此，可將從晶圓W甩脫之處理液等，沿第一本體部36的傾斜面向晶圓W的外側流動，並可降低再附著於晶圓W而造成污染的風險。又，上述基板保持部135，於「把持部135a、135’a」之凹狀的彎曲部(與晶圓W的外圍端緣接觸之部分)的下方側，在晶圓W的背面與「爪部136、136’」的下端之間，形成通過「爪部136、136’」的間隔之間隙。藉此，使供給至晶圓W的背面側之處理液等，向「爪部136、136’」的間隔流動，可防止處理液等與傾斜面衝突而飛散。The substrate holding portion 135 is a surface (front surface) facing the wafer W on the lower side of the "claw portions 136, 136 '" as an inclined surface of "the outside of the wafer W is inclined downward". Thereby, the processing liquid or the like that is detached from the wafer W can flow along the inclined surface of the first body portion 36 to the outside of the wafer W, and the risk of contamination due to reattachment to the wafer W can be reduced. The substrate holding portion 135 is located below the concave curved portion (a portion in contact with the peripheral edge of the wafer W) of the "holding portions 135a, 135'a", and on the back surface of the wafer W and the "claws" A gap is formed between the lower ends of the portions 136, 136 '"through a gap between the" claw portions 136, 136' ". Thereby, the processing liquid and the like supplied to the back surface side of the wafer W are caused to flow to the interval of the "claw portions 136, 136 '", and the processing liquid and the like can be prevented from scattering due to collision with the inclined surface.
4‧‧‧控制裝置
18‧‧‧控制部
19‧‧‧儲存部
33‧‧‧驅動部(旋轉驅動部)
34‧‧‧保持板
35‧‧‧基板保持構件
35a‧‧‧把持部
36‧‧‧第一本體部
36’‧‧‧第二本體部
36a‧‧‧第一側面部
36b‧‧‧第二側面部
36c‧‧‧第三側面部
36d‧‧‧頂面部
37‧‧‧尖端部
38‧‧‧液流引導部
40‧‧‧處理流體供給部(處理液供給手段)4‧‧‧control device
18‧‧‧Control Department
19‧‧‧Storage Department
33‧‧‧Driver (rotary drive)
34‧‧‧ holding plate
35‧‧‧ substrate holding member
35a‧‧‧holding section
36‧‧‧First body
36'‧‧‧Second body section
36a‧‧‧first side
36b‧‧‧Second side section
36c‧‧‧third side
36d‧‧‧Top Facial
37‧‧‧ Tip
38‧‧‧ liquid guide
40‧‧‧Process fluid supply unit (Process liquid supply means)
【圖1】 顯示依本實施態樣之基板處理系統的概略構成之圖式。 【圖2】 顯示依本實施態樣之處理單元的概略構成之圖式。 【圖3】 顯示本發明之處理單元的構成之縱剖面圖。 【圖4】(a)~(b) 顯示本發明之基板保持部的細節之立體圖。 【圖5】(a)~(c) 顯示藉由液流引導部所引導的處理液之流動的立體圖。 【圖6】(a)~(b) 顯示其他基板保持部之細節的立體圖。[Fig. 1] A diagram showing a schematic configuration of a substrate processing system according to this embodiment. [Fig. 2] A diagram showing a schematic configuration of a processing unit according to this embodiment. [Fig. 3] A longitudinal sectional view showing a configuration of a processing unit of the present invention. [Fig. 4] (a) to (b) are perspective views showing details of the substrate holding portion of the present invention. [Fig. 5] (a) to (c) are perspective views showing the flow of the processing liquid guided by the liquid flow guide. [Fig. 6] (a) to (b) are perspective views showing details of other substrate holding portions.
Claims (11)
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| JP7004579B2 (en) * | 2018-01-15 | 2022-01-21 | 東京エレクトロン株式会社 | Board processing equipment, board processing method and storage medium |
| JP7438015B2 (en) | 2020-05-01 | 2024-02-26 | 東京エレクトロン株式会社 | Substrate processing equipment |
| CN113210322B (en) * | 2021-04-27 | 2022-10-28 | 华虹半导体(无锡)有限公司 | Wafer clamping device for single-wafer wet cleaning process chamber |
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| JP5301505B2 (en) | 2009-08-27 | 2013-09-25 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
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| TW201624610A (en) | 2016-07-01 |
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