TW201624610A - Substrate processing system - Google Patents
Substrate processing system Download PDFInfo
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- TW201624610A TW201624610A TW104137799A TW104137799A TW201624610A TW 201624610 A TW201624610 A TW 201624610A TW 104137799 A TW104137799 A TW 104137799A TW 104137799 A TW104137799 A TW 104137799A TW 201624610 A TW201624610 A TW 201624610A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
Description
本發明所揭露之實施態樣，係關於基板處理系統。Embodiments of the present invention are directed to a substrate processing system.
周知，以往藉由對於半導體晶圓、玻璃基板等基板供給處理液，以處理基板之基板處理系統。例如，專利文獻1揭示基板處理系統，其具備「旋轉台」及「附設於旋轉台以把持基板外側之基板保持構件」，並向基板表面供給藥液或純水等處理液。 ﹝先前技術文獻﹞ ﹝專利文獻﹞Conventionally, a substrate processing system for processing a substrate has been conventionally provided by supplying a processing liquid to a substrate such as a semiconductor wafer or a glass substrate. For example, Patent Document 1 discloses a substrate processing system including a "rotating table" and a "substrate holding member attached to the rotating table to grip the outside of the substrate", and supplying a processing liquid such as a chemical liquid or pure water to the surface of the substrate. [Prior Technical Literature] [Patent Literature]
﹝專利文獻1﹞ 日本特開2011-071477號公報[Patent Document 1] Japanese Patent Publication No. 2011-071477
﹝發明所欲解決之問題﹞[The problem that the invention wants to solve]
然而，習知的基板處理系統中，供給至旋轉之基板的處理液，由於離心力而向基板外方甩脫時，與基板保持構件衝突，並向基板上方飛散。向基板上方飛散之處理液，有附著於乾燥後的基板而污損基板之虞。 ﹝解決問題之方式﹞However, in the conventional substrate processing system, when the processing liquid supplied to the rotating substrate is released from the outside of the substrate due to the centrifugal force, it collides with the substrate holding member and scatters above the substrate. The treatment liquid scattered to the upper side of the substrate adheres to the dried substrate to contaminate the substrate. [The way to solve the problem]
為了解決上述課題，本發明提供一基板處理系統，其特徵為具備：保持板，於處理基板之基板處理系統，以可繞鉛直軸自由旋轉的方式設置；基板保持構件，設置於該保持板，以保持該基板；旋轉驅動部，使保持於該基板保持構件之基板，朝預定的方向旋轉；及處理流體供給部，向保持於該基板保持構件之基板，供給處理液；該基板保持構件，具有：第一側面部，設置於與基板對向的位置；及第二側面部與第三側面部，鄰接該第一側面部；該第一側面部具有把持部，以把持基板的端面；該第二側面部，在與該第一側面部之間形成尖端部，並具備液流引導部，將供給至基板後之處理液向基板下方引導。 ﹝發明之效果﹞In order to solve the above problems, the present invention provides a substrate processing system, comprising: a holding plate disposed on a substrate processing system for processing a substrate so as to be rotatable about a vertical axis; and a substrate holding member disposed on the holding plate Holding the substrate; rotating the driving unit to rotate the substrate held by the substrate holding member in a predetermined direction; and processing the fluid supply unit to supply the processing liquid to the substrate held by the substrate holding member; the substrate holding member The first side surface portion is disposed at a position facing the substrate; and the second side surface portion and the third side surface portion are adjacent to the first side surface portion; the first side surface portion has a grip portion for holding the end surface of the substrate; The second side surface portion has a tip end portion formed between the first side surface portion and a liquid flow guiding portion, and guides the processing liquid supplied to the substrate to the lower side of the substrate. [Effects of the Invention]
本發明可抑制「供給至基板後的處理液，附著於乾燥後的基板」，並可防止基板污損。According to the present invention, the "treatment liquid supplied to the substrate can be adhered to the dried substrate", and the substrate can be prevented from being stained.
圖1為顯示依本實施態樣之基板處理系統的概略構成之圖式。以下，為了使位置關係明確，規定互相垂直的X軸、Y軸及Z軸，並將Z軸正方向定為鉛直向上的方向。Fig. 1 is a view showing a schematic configuration of a substrate processing system according to this embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis which are perpendicular to each other are defined, and the positive direction of the Z-axis is set to the direction of the vertical direction.
如圖1所示，基板處理系統1包含「搬入出站2」及「處理站3」。搬入出站2與處理站3係鄰接設置。As shown in FIG. 1, the substrate processing system 1 includes "moving in and out of the station 2" and "processing station 3". The loading/unloading station 2 is disposed adjacent to the processing station 3 system.
搬入出站2包含「載體載置部11」及「搬送部12」。在載體載置部11載置複數之載體C，該複數之載體C以水平狀態收容複數片基板，本實施態樣中，係半導體晶圓(以下稱作「晶圓W」)。The loading/unloading station 2 includes a "carrier mounting portion 11" and a "transporting portion 12". A plurality of carriers C are placed on the carrier mounting portion 11, and the plurality of carriers C accommodate a plurality of substrates in a horizontal state. In the present embodiment, the semiconductor wafers (hereinafter referred to as "wafers W") are used.
搬送部12鄰接載體載置部11而設置，於其內部具備「基板搬送裝置13」及「傳遞部14」。基板搬送裝置13具備晶圓固持機構，以固持晶圓W。又，基板搬送裝置13能向水平方向及鉛直方向移動，並能以鉛直軸為中心旋轉；使用晶圓固持機構，在載體C與傳遞部14之間搬送晶圓W。The transport unit 12 is provided adjacent to the carrier mounting portion 11, and includes a "substrate transport device 13" and a "transfer portion 14" therein. The substrate transfer device 13 includes a wafer holding mechanism to hold the wafer W. Further, the substrate transfer device 13 can be moved in the horizontal direction and the vertical direction, and can be rotated about the vertical axis, and the wafer W can be transferred between the carrier C and the transfer portion 14 by using the wafer holding mechanism.
處理站3係鄰接搬送部12而設置。處理站3包含「搬送部15」及「複數之處理單元16」。複數之處理單元16，係於搬送部15的兩側並列而設置。The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a "transporting unit 15" and a "complex processing unit 16". The plurality of processing units 16 are arranged side by side on the both sides of the transport unit 15.
於搬送部15的內部，具備「基板搬送裝置17」。基板搬送裝置17具備晶圓固持機構，以固持晶圓W。又，基板搬送裝置17能向水平方向及鉛直方向移動，並能以鉛直軸為中心旋轉；使用晶圓固持機構，在傳遞部14與處理單元16之間搬送晶圓W。The "substrate conveying device 17" is provided inside the conveying unit 15. The substrate transfer device 17 includes a wafer holding mechanism to hold the wafer W. Further, the substrate transfer device 17 can be moved in the horizontal direction and the vertical direction, and can be rotated about the vertical axis. The wafer W is transferred between the transfer unit 14 and the processing unit 16 by using the wafer holding mechanism.
處理單元16，對於由基板搬送裝置17搬送之晶圓W，進行既定的基板處理。The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
又，基板處理系統1包含「控制裝置4」。控制裝置4例如為電腦，其包含「控制部18」及「儲存部19」。在儲存部19儲存「控制於基板處理系統1中執行的各種處理之程式」。控制部18，藉由讀取並執行儲存於儲存部19的程式，以控制基板處理系統1的動作。Further, the substrate processing system 1 includes a "control device 4". The control device 4 is, for example, a computer, and includes a "control unit 18" and a "storage unit 19". The program "controls the various processes executed in the substrate processing system 1" is stored in the storage unit 19. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
又，關聯的程式，係記錄於可由電腦讀取的儲存媒體，亦可自儲存媒體安裝至控制裝置4之儲存部19。作為可由電腦讀取的儲存媒體，例如包含硬碟(HD)、軟性磁碟(FD)、光碟(CD)、磁光碟(MO)及記憶卡等。Further, the associated program is recorded on a storage medium readable by a computer, or may be installed in the storage unit 19 of the control device 4 from the storage medium. As a storage medium readable by a computer, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card are included.
如上述構成之基板處理系統1中，首先，搬入出站2之基板搬送裝置13，從載置於載體載置部11之載體C，將晶圓W取出，並將取出之晶圓W載置於傳遞部14。載置於傳遞部14之晶圓W，係藉由處理站3之基板搬送裝置17，從傳遞部14取出，並向處理單元16搬入。In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 loaded in the exit station 2 takes out the wafer W from the carrier C placed on the carrier mounting portion 11, and mounts the taken wafer W. In the transmission unit 14. The wafer W placed on the transfer unit 14 is taken out from the transfer unit 14 by the substrate transfer device 17 of the processing station 3, and is carried into the processing unit 16.
向處理單元16搬入之晶圓W，在利用處理單元16處理後，藉由基板搬送裝置17從處理單元16搬出，並載置於傳遞部14。又，載置於傳遞部14之處理完畢的晶圓W，藉由基板搬送裝置13，返回載體載置部11之載體C。The wafer W carried into the processing unit 16 is processed by the processing unit 16 and then carried out from the processing unit 16 by the substrate transfer device 17 and placed on the transfer unit 14. Further, the processed wafer W placed on the transfer unit 14 is returned to the carrier C of the carrier placing unit 11 by the substrate transfer device 13.
如圖2所示，處理單元16包含：腔室20、基板固持機構30、處理流體供給部40及回收杯50。As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.
腔室20係用來收容：基板固持機構30、處理流體供給部40及回收杯50。在腔室20的頂棚部，設有「風機過濾機組(Fan Filter Unit，FFU)21」。風機過濾機組21，於腔室20內形成降流。The chamber 20 is for housing the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50. A "Fan Filter Unit (FFU) 21" is provided in the ceiling portion of the chamber 20. The fan filter unit 21 forms a downflow in the chamber 20.
基板固持機構30包含：固持部31、支柱部32及驅動部33。固持部31，將晶圓W水平固持。支柱部32為在鉛直方向延伸的構件，其基端部係藉由驅動部33可旋轉地支持，於其前端部將固持部31水平支持。驅動部33，使支柱部32繞著鉛直軸旋轉。關聯的基板固持機構30，藉由使用驅動部33而使支柱部32旋轉，以使支持於支柱部32的固持部31旋轉，藉此，使固持於固持部31的晶圓W旋轉。The substrate holding mechanism 30 includes a holding portion 31 , a pillar portion 32 , and a driving portion 33 . The holding portion 31 holds the wafer W horizontally. The pillar portion 32 is a member that extends in the vertical direction, and the base end portion is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at the front end portion thereof. The drive unit 33 rotates the column portion 32 about the vertical axis. The associated substrate holding mechanism 30 rotates the pillar portion 32 by using the driving portion 33 to rotate the holding portion 31 supported by the pillar portion 32, thereby rotating the wafer W held by the holding portion 31.
處理流體供給部40對晶圓W供給處理流體。處理流體供給部40連接於處理流體供給源70。The processing fluid supply unit 40 supplies the processing fluid to the wafer W. The processing fluid supply unit 40 is connected to the processing fluid supply source 70.
回收杯50係配置成包圍固持部31，藉由固持部31的旋轉，集取自晶圓W飛散的處理液。在回收杯50的底部，形成排液口51；藉由回收杯50集取之處理液，自關聯的排液口51向處理單元16的外部排出。又，在回收杯50的底部形成排氣口52，以自風機過濾機組21將供給的氣體向處理單元16的外部排出。The recovery cup 50 is disposed so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31. At the bottom of the recovery cup 50, a liquid discharge port 51 is formed; the treatment liquid collected by the recovery cup 50 is discharged from the associated liquid discharge port 51 to the outside of the processing unit 16. Further, an exhaust port 52 is formed at the bottom of the recovery cup 50 to discharge the supplied gas from the outside of the processing unit 16 from the fan filter unit 21.
關於基板保持機構30之各構成要素的細節，由於可使用公知的(例如記載於日本特開2011-071747)基板保持機構，故省略詳細說明。For details of each component of the substrate holding mechanism 30, a well-known (for example, JP-A-2011-071747) substrate holding mechanism can be used, and detailed description thereof will be omitted.
接著，就保持部31之具體構成，參照圖3說明。Next, the specific configuration of the holding portion 31 will be described with reference to FIG. 3.
保持部31，具備：圓板狀的保持板34，可繞鉛直軸向既定方向旋轉；基板保持構件35，自側方保持晶圓W；及升降銷板23，具有自下方支持晶圓W之升降銷22。進而，保持部31具備第二處理流體供給部60，設置該第二處理流體供給部60，以分別貫通「形成於保持板34的中心部分之貫通孔34a」及「形成升降銷板23的中心部分之貫通孔23a」。第二處理流體供給部60，將純水或藥液等處理液，供給至由保持板34保持之晶圓W的背面。The holding portion 31 includes a disk-shaped holding plate 34 that is rotatable in a predetermined direction perpendicular to the axial direction, a substrate holding member 35 that holds the wafer W from the side, and a lift pin plate 23 that supports the wafer W from below. Lifting pin 22. Further, the holding portion 31 includes the second processing fluid supply unit 60, and the second processing fluid supply unit 60 is provided to penetrate the "through hole 34a formed in the central portion of the holding plate 34" and "the center of the lift pin plate 23". Part of the through hole 23a". The second processing fluid supply unit 60 supplies a processing liquid such as pure water or a chemical liquid to the back surface of the wafer W held by the holding plate 34.
於保持板34外圍具備貫通孔34b。即使處理液從「升降銷板23與保持板34之間隙」侵入，處理液係由此貫通孔34b排出。A through hole 34b is provided in the periphery of the holding plate 34. Even if the treatment liquid intrudes from the "gap between the lift pin plate 23 and the holding plate 34", the treatment liquid is discharged through the through hole 34b.
如圖4(a)、(b)所示，基板保持構件35，具備：柱狀之第一本體部36；及柱狀之第二本體部36’，設置於該第一本體部36的上部。第一本體部36於俯視時呈略四角形。又，第二本體部36’於俯視時呈略三角形。而第二本體部36’在與晶圓W對向的位置，具備第一側面部36a。第一側面部36a，具備於其表面把持晶圓W的端面之把持部35a。進而，第二本體部36’，具備鄰接第一側面部36a之第二側面部36b、第三側面部36c及頂面部36d。第二側面部36b，係鄰接「第一側面部36a之晶圓W(基板保持構件35)的旋轉方向側」而形成，在與第一側面部36a之間，形成銳角之尖端部37。而在第二側面部36b的表面，具備後述之液流引導部38。尖端部37，朝向晶圓W(基板保持構件35)的旋轉方向，設置為尖銳狀。As shown in FIGS. 4(a) and 4(b), the substrate holding member 35 includes a columnar first body portion 36 and a columnar second body portion 36' provided at an upper portion of the first body portion 36. . The first body portion 36 has a substantially square shape in plan view. Further, the second body portion 36' is slightly triangular in plan view. The second main body portion 36' includes a first side surface portion 36a at a position facing the wafer W. The first side surface portion 36a includes a grip portion 35a that grips an end surface of the wafer W on the surface thereof. Further, the second main body portion 36' includes a second side surface portion 36b adjacent to the first side surface portion 36a, a third side surface portion 36c, and a top surface portion 36d. The second side surface portion 36b is formed adjacent to the "rotation direction side of the wafer W (substrate holding member 35) of the first side surface portion 36a", and forms an acute-angled tip end portion 37 between the first side surface portion 36a and the first side surface portion 36a. On the surface of the second side surface portion 36b, a liquid flow guiding portion 38 to be described later is provided. The tip end portion 37 is provided in a sharp shape toward the rotation direction of the wafer W (substrate holding member 35).
把持部35a，自第一側面部36a的表面，向晶圓W(基板保持構件35)的旋轉中心方向突出，並配置於尖端部37附近，以其頂面支持晶圓W。把持部35a，比第一側面部36a的幅寬狹窄，而愈靠近「突出的前端」愈低，在把持部35a的頂面支持晶圓W的周緣部。藉此，能極度將與晶圓W之接觸部分變小，並能抑制處理液殘留在接觸部分，而成為顆粒。The grip portion 35a protrudes from the surface of the first side surface portion 36a toward the center of rotation of the wafer W (substrate holding member 35), and is disposed in the vicinity of the tip end portion 37, and supports the wafer W on the top surface thereof. The grip portion 35a is narrower than the width of the first side surface portion 36a, and the closer to the "protruding end", the lower the peripheral portion of the wafer W is supported on the top surface of the grip portion 35a. Thereby, the contact portion with the wafer W can be extremely reduced, and the treatment liquid can be prevented from remaining in the contact portion to become particles.
第二側面部36b具備引導部38，該引導部38將處理液向晶圓W下方引導。引導部38具備底面38a，該底面38a自第二側面部36b的表面突出，該底面38a為引導部38中向下的面。然後，在底面38a的表面引導處理液。亦即，底面38a，於靠近第一側面部36a之一側，係配置在比「支持於把持部35a之晶圓W的頂面」更為上方；而於自第一側面部36a遠離之一側(第三側面部36c側)，係配置在比「支持於把持部35a之晶圓W的頂面及底面」更為下方；成為愈自晶圓W遠離，愈向下方下降之傾斜面。從旋轉中之晶圓W甩脫的處理液，係藉由液流引導部38向晶圓W下方引導，而向回收杯50流動。藉由回收杯50集取的處理液，自排液口51排出。此外，若從第一側面部36a側觀看，第一側面部36a的端部下側係成為缺口的形狀，因此，處理液自此缺口之部分向引導部38的底面38a排出。The second side surface portion 36b includes a guide portion 38 that guides the processing liquid to the lower side of the wafer W. The guide portion 38 is provided with a bottom surface 38a that protrudes from the surface of the second side surface portion 36b, which is a downward surface of the guide portion 38. Then, the treatment liquid is guided on the surface of the bottom surface 38a. That is, the bottom surface 38a is disposed closer to one side than the first side surface portion 36a than the "top surface of the wafer W supported by the holding portion 35a"; and is away from the first side surface portion 36a. The side (the side of the third side surface portion 36c) is disposed below the "top surface and the bottom surface of the wafer W supported by the grip portion 35a", and is an inclined surface that gradually decreases downward from the wafer W. The treatment liquid that has been removed from the wafer W that is being rotated is guided to the lower side of the wafer W by the liquid flow guiding unit 38, and flows to the recovery cup 50. The treatment liquid collected in the collection cup 50 is discharged from the liquid discharge port 51. Further, when viewed from the side of the first side surface portion 36a, the lower end portion of the end portion of the first side surface portion 36a has a shape of a notch, and therefore, the treatment liquid is discharged from the portion of the notch to the bottom surface 38a of the guide portion 38.
接著，針對由這般構成組成之處理單元16的動作加以說明。首先，升降銷板23藉由升降驅動部(未圖式)，位移到上方位置。接著，藉由基板搬送裝置17，將晶圓W從處理單元16的外部搬送到處理單元16，並將此晶圓W載置於升降銷板23的升降銷22上。Next, the operation of the processing unit 16 having such a configuration will be described. First, the lift pin plate 23 is displaced to the upper position by the lift drive portion (not shown). Next, the wafer W is transferred from the outside of the processing unit 16 to the processing unit 16 by the substrate transfer device 17, and the wafer W is placed on the lift pins 22 of the lift pin plate 23.
升降銷板23下降，將晶圓W傳遞到保持部31，並藉由基板保持構件35保持。The lift pin plate 23 is lowered, the wafer W is transferred to the holding portion 31, and held by the substrate holding member 35.
接著，在晶圓W旋轉之狀態下，從處理流體供給部40，向晶圓W的表面供給純水或藥液等處理液，並在晶圓W的表面進行既定之液處理。此外，在從處理流體供給部40供給處理液時，亦可自第二處理流體供給部60，向晶圓W的背面供給處理液。Then, in the state where the wafer W is rotated, a processing liquid such as pure water or a chemical liquid is supplied from the processing fluid supply unit 40 to the surface of the wafer W, and a predetermined liquid treatment is performed on the surface of the wafer W. Further, when the processing liquid is supplied from the processing fluid supply unit 40, the processing liquid may be supplied from the second processing fluid supply unit 60 to the back surface of the wafer W.
供給至旋轉中之晶圓W的表面之處理液，藉由離心力向晶圓W的周緣部流動，而向回收杯50流動。由於在晶圓W的周緣部存在基板保持構件35，故有一部分的處理液於基板保持構件35衝突而向晶圓W的上方飛散之虞。然而，由於在本實施態樣之基板保持構件35，設置有液流引導部38，故藉由液流引導部，處理液38不會向晶圓W的上方飛散，而會被向下方引導。被引導到晶圓下方的處理液，向回收杯50流動。藉由回收杯50集取的處理液，自排液口51排出。The processing liquid supplied to the surface of the wafer W that is being rotated flows to the peripheral portion of the wafer W by centrifugal force, and flows into the recovery cup 50. Since the substrate holding member 35 is present in the peripheral portion of the wafer W, a part of the processing liquid collides with the substrate holding member 35 and scatters above the wafer W. However, since the liquid crystal guiding portion 38 is provided in the substrate holding member 35 of the present embodiment, the processing liquid 38 is not scattered toward the upper side of the wafer W by the liquid flow guiding portion, but is guided downward. The treatment liquid guided to the lower side of the wafer flows to the recovery cup 50. The treatment liquid collected in the collection cup 50 is discharged from the liquid discharge port 51.
進行既定時間晶圓W之清洗處理後，停止供給處理液，並藉由使晶圓W旋轉，來進行晶圓W之乾燥處理。若乾燥處理結束，升降驅動部(未圖式)使升降銷22從下方位置移動到上方位置。After the cleaning process of the wafer W is performed for a predetermined period of time, the supply of the processing liquid is stopped, and the wafer W is rotated to perform the drying process of the wafer W. When the drying process is completed, the elevation drive unit (not shown) moves the lift pin 22 from the lower position to the upper position.
升降銷板23移動到上方位置後，藉由基板搬送裝置17，從升降銷22取出「載置於升降銷22上的晶圓W」，向基板處理裝置的外部搬出。如此，完成一連串對晶圓W之液處理。After the lift pin plate 23 is moved to the upper position, the substrate transfer device 17 takes out the "wafer W placed on the lift pin 22" from the lift pin 22 and carries it out to the outside of the substrate processing apparatus. In this way, a series of liquid processing of the wafer W is completed.
以下，針對藉由液流引導部38而獲得之飛散防止效果，參照圖5說明。Hereinafter, the scattering prevention effect obtained by the liquid flow guiding portion 38 will be described with reference to Fig. 5 .
若向旋轉中之晶圓W供給處理液，由於處理液與晶圓W之摩擦力，在晶圓W的旋轉方向，處理液會如同描繪曲線般流去，而於尖端部37衝突。然而，由於在第二側面部36b設置有液流引導部38，故藉由旋轉之液流引導部38，將處理液強制向晶圓W的下方引導，可以防止向晶圓W的上方飛散。因此，可防止供給至晶圓W後之處理液，附著於乾燥後之晶圓W，並可防止污損晶圓W。When the processing liquid is supplied to the rotating wafer W, the frictional force between the processing liquid and the wafer W causes the processing liquid to flow as the drawing curve in the rotation direction of the wafer W, and collides with the tip end portion 37. However, since the liquid flow guiding portion 38 is provided in the second side surface portion 36b, the liquid flow guiding portion 38 is forcibly guided to the lower side of the wafer W, thereby preventing scattering to the upper side of the wafer W. Therefore, it is possible to prevent the processing liquid supplied to the wafer W from adhering to the dried wafer W, and to prevent contamination of the wafer W.
液流引導部38之向下的面，亦即底面38a，於靠近第一側面部36a一側，係配置為比「支持f於把持部35a之晶圓W」更為上方，而於自第一側面部36a遠離一側(第三側面部36c側)，係配置為比「支持於把持部35a之晶圓W」更為下方。藉此，處理液變得易於進入液流引導部38，可防止處理液向晶圓W上方飛散。因此，可防止供給至晶圓W後之處理液，附著於乾燥後的晶圓W，並可防止污損晶圓W。The downward surface of the liquid flow guiding portion 38, that is, the bottom surface 38a is disposed closer to the first side surface portion 36a than the "wafer W supporting the holding portion 35a". The one side surface portion 36a is away from the one side (the third side surface portion 36c side) and is disposed below the "wafer W supported by the grip portion 35a". Thereby, the processing liquid can easily enter the liquid flow guiding portion 38, and the processing liquid can be prevented from scattering above the wafer W. Therefore, it is possible to prevent the processing liquid supplied to the wafer W from adhering to the dried wafer W, and to prevent contamination of the wafer W.
又，液流引導部38具備銳角的尖端部37。藉此，在尖端部37發生衝突之處理液所承受的衝突能量變小，處理液難以變為液滴。處理液可以不會變為液滴而保持液流的狀態，藉由液流引導部38向晶圓W下方引導。藉此，可降低處理液向晶圓W上方飛散的風險。因此，可防止供給至晶圓W後的處理液附著於乾燥後的晶圓W，並可防止污損晶圓W。Further, the liquid flow guiding portion 38 has an acute-angled tip end portion 37. As a result, the collision energy received by the treatment liquid that collides with the tip end portion 37 is reduced, and it is difficult for the treatment liquid to become a droplet. The treatment liquid can maintain the liquid flow state without becoming a droplet, and is guided to the lower side of the wafer W by the liquid flow guiding portion 38. Thereby, the risk of the processing liquid scattering above the wafer W can be reduced. Therefore, it is possible to prevent the processing liquid supplied to the wafer W from adhering to the dried wafer W, and to prevent contamination of the wafer W.
進而，當將處理液供給至晶圓W背面之情形，供給至背面的處理液之一部分，會沿把持部35a的斜面流動，而有飛散至晶圓W上方之虞。然而，即便供給至晶圓W後的處理液，沿把持部35a的斜面流動，仍可藉由液流引導部38將處理液向晶圓W下方引導。因此，處理液不會向晶圓W上方飛散，可防止供給至晶圓W後的處理液，附著於乾燥後的晶圓W。又，把持部35a的幅寬，係比第一側面部36a的幅寬更為狹窄。因此，可減少沿把持部35a的斜面流動之處理液的量，而可防止污損晶圓W。Further, when the processing liquid is supplied to the back surface of the wafer W, part of the processing liquid supplied to the back surface flows along the slope of the grip portion 35a, and there is a flaw which scatters above the wafer W. However, even if the processing liquid supplied to the wafer W flows along the slope of the grip portion 35a, the liquid guiding unit 38 can guide the processing liquid to the lower side of the wafer W. Therefore, the processing liquid does not scatter on the wafer W, and the processing liquid supplied to the wafer W can be prevented from adhering to the dried wafer W. Further, the width of the grip portion 35a is narrower than the width of the first side portion 36a. Therefore, the amount of the treatment liquid flowing along the slope of the grip portion 35a can be reduced, and the wafer W can be prevented from being stained.
基板保持構件35，具有：柱狀的第一本體部36，於俯視時呈略四角形；及柱狀的第二本體部36’，自第一本體部36延續設置，於俯視時呈略三角形。第二本體部36’，其側面係由第一側面部36a、第二側面部36b及第三側面部36c構成。又，第一側面部36a與第三側面部36c，係與第一本體部36的側面延續而形成，具有液流引導部38之第二側面部36b，係沿第一本體部36的對角線形成。藉此，以簡易的構造構成液流引導部38。The substrate holding member 35 has a columnar first body portion 36 which is slightly quadrangular in plan view, and a columnar second body portion 36' which is continuously provided from the first body portion 36 and has a substantially triangular shape in plan view. The second body portion 36' has a side surface composed of a first side surface portion 36a, a second side surface portion 36b, and a third side surface portion 36c. Further, the first side surface portion 36a and the third side surface portion 36c are formed continuously with the side surface of the first body portion 36, and have the second side surface portion 36b of the liquid flow guiding portion 38, which is diagonally along the first body portion 36. Line formation. Thereby, the liquid flow guiding portion 38 is configured in a simple structure.
此外，本實施態樣之基板處理系統，不限定於上述態樣，可進行各種改變。Further, the substrate processing system of the present embodiment is not limited to the above-described aspect, and various changes can be made.
例如，設置於基板保持構件35之液流引導部38，亦可為溝狀；其剖面形狀，亦可為凹型、V字型或U字型。For example, the liquid flow guiding portion 38 provided in the substrate holding member 35 may have a groove shape, and the cross-sectional shape thereof may be a concave shape, a V shape, or a U shape.
又，第二本體部36’，亦可於俯視時呈四角形，亦可為梯形、菱形或平行四邊形。Further, the second main body portion 36' may have a quadrangular shape in plan view, or may be trapezoidal, rhombic or parallelogram.
又，如圖6所示，基板保持構件135，將保持晶圓W用之複數(在此為兩個)爪部136、136’，於晶圓W的旋轉方向隔著間隔設置。在爪部136、136’，分別形成有「第一側面部136a、136’a」、「第二側面部136b、136’b」及「第三側面部136c、136’c」。在「第一側面部136a、136’a」的表面，與晶圓W抵接之「把持部135a、135’a」，以凹狀形成。「把持部135a、135’a」中，以凹狀彎曲之部分(最深部)與晶圓W的外圍端緣接觸，以保持晶圓W。「第二側面部136b、136’b」中，在與「第一側面部136a、136’a」之間形成「尖端部137、137’」，向晶圓W下方引導處理液之「液流引導部138、138’」形成於表面。此外，雖然在上述基板保持部135，於「第二側面部136b、136’b」與「第三側面部136c、136’c」之間形成有「第4側面部136d、136’d」，然而，亦可將「第二側面部136b、136’b的後端」與「第三側面部136c、136’c的後端」連接，而設定為沒有「第4側面部136d、136’d」之形狀。Further, as shown in Fig. 6, the substrate holding member 135 is provided with a plurality of (here, two) claw portions 136 and 136' for holding the wafer W at intervals in the rotation direction of the wafer W. The first side surface portions 136a, 136'a", the "second side surface portions 136b, 136'b" and the "third side surface portions 136c, 136'c" are formed in the claw portions 136, 136', respectively. On the surface of the "first side surface portions 136a, 136'a", the "grip portions 135a, 135'a" which are in contact with the wafer W are formed in a concave shape. In the grip portions 135a and 135'a", the concave portion (the deepest portion) is in contact with the peripheral end edge of the wafer W to hold the wafer W. In the "second side surface portions 136b, 136'b", "tip portions 137, 137'" are formed between the "first side surface portions 136a, 136'a" to guide the liquid flow of the processing liquid below the wafer W. Guide portions 138, 138'" are formed on the surface. Further, in the substrate holding portion 135, "fourth side surface portions 136d, 136'd" are formed between the "second side surface portions 136b, 136'b" and the "third side surface portions 136c, 136'c". However, the "rear end of the second side portions 136b, 136'b" may be connected to the "rear end of the third side portions 136c, 136'c", and the fourth side portions 136d, 136'd may be omitted. The shape.
如此，由於在基板保持構件135設置有保持晶圓W之複數個爪部136、136’，可使沿晶圓W流動之處理液所衝突的面積(把持部135a、135’a的面積)變小，而可抑制處理液飛散。特別是，藉由將把持部135a、135’a形成凹狀，可抑制處理液向上方飛散。又，可將把持部135a、135’a作為曲面，進一步抑制處理液飛散。As described above, since the substrate holding member 135 is provided with a plurality of claw portions 136 and 136' for holding the wafer W, the area (the area of the grip portions 135a and 135'a) in which the processing liquid flowing along the wafer W collides with each other can be changed. Small, and can inhibit the scattering of the treatment liquid. In particular, by forming the grip portions 135a and 135'a in a concave shape, it is possible to suppress the processing liquid from scattering upward. Further, the grip portions 135a and 135'a can be used as curved surfaces to further suppress scattering of the treatment liquid.
上述基板保持部135中，在所有「爪部136、136’」，形成有「第一側面部136a、136’a」、「第二側面部136b、136’b」及「第三側面部136c、136’c」。藉此，可藉由各「爪部136、136’」之「液流引導部138、138’」，將處理液向晶圓W下方良好地引導。此外，亦可在任一「爪部136、136’」，形成「第一側面部136a、136’a」、「第二側面部136b、136’b」及「第三側面部136c、136’c」。又，雖然在上述基板保持部135，係將「爪部136的第三側面部136c」與「爪部136’的第二側面部136’b」平行形成，並在「爪部136、136’」之間形成平行的間隔，然而，亦可藉由形成愈向後方「爪部136、136’」之間逐漸寬廣的間隔，而設定為使處理液平順流動。雖然在上述基板保持部135，形成有兩個「爪部136、136’」，但亦可形成三個以上。「爪部136、136’」的間隔係設定為：「爪部136、136’」整體的幅寬(於前視基板保持部135時，從最右端的爪部136之第一側面部136a的右端，到最左端的爪部136’之第一側面部136’a的左端之距離)變為比形成於晶圓W的定位用缺口(凹口)的幅寬更大。因此，形成於任一「爪部136、136’」之「把持部135a、135’a」，會抵接於晶圓W的外圍端緣。從而，可防止任一「把持部135a、135’a」夾在晶圓W的凹口而產生晶圓W之把持不良。In the substrate holding portion 135, "first side portions 136a, 136'a", "second side portions 136b, 136'b" and "third side portion 136c" are formed in all of the "claw portions 136, 136'". 136'c". Thereby, the processing liquid can be favorably guided to the lower side of the wafer W by the "liquid flow guiding portions 138, 138'" of the respective "claw portions 136, 136'". Further, the "first side portions 136a, 136'a", the "second side portions 136b, 136'b" and the "third side portions 136c, 136'c may be formed in any of the "claw portions 136, 136'". "." Further, in the substrate holding portion 135, the "third side surface portion 136c" of the claw portion 136 is formed in parallel with the second side surface portion 136'b" of the claw portion 136', and the "claw portions 136, 136' are formed. Parallel intervals are formed between them, however, it is also possible to set the processing liquid to flow smoothly by forming a gradually wider interval between the rearward "claw portions 136, 136'". Although two "claw portions 136, 136'" are formed in the substrate holding portion 135, three or more pieces may be formed. The interval between the "claw portions 136, 136'" is set to the width of the entire "claw portions 136, 136'" (in the case of the front substrate holding portion 135, from the first side surface portion 136a of the rightmost claw portion 136) The right end, the distance to the left end of the first side portion 136'a of the leftmost claw portion 136' becomes larger than the width of the positioning notch (notch) formed in the wafer W. Therefore, the "holding portions 135a, 135'a" formed in any of the "claw portions 136, 136'" abut against the peripheral end edge of the wafer W. Therefore, it is possible to prevent any of the "holding portions 135a, 135'a" from being caught in the notch of the wafer W, resulting in poor holding of the wafer W.
上述基板保持部135，係將與「爪部136、136’」下側的晶圓W對向之一面(前面)，作為「下方向晶圓W外側傾斜」之傾斜面。藉此，可將從晶圓W甩脫之處理液等，沿第一本體部36的傾斜面向晶圓W的外側流動，並可降低再附著於晶圓W而造成污染的風險。又，上述基板保持部135，於「把持部135a、135’a」之凹狀的彎曲部(與晶圓W的外圍端緣接觸之部分)的下方側，在晶圓W的背面與「爪部136、136’」的下端之間，形成通過「爪部136、136’」的間隔之間隙。藉此，使供給至晶圓W的背面側之處理液等，向「爪部136、136’」的間隔流動，可防止處理液等與傾斜面衝突而飛散。The substrate holding portion 135 is an inclined surface that faces the wafer W on the lower side of the "claw portions 136, 136'" as a "lower side of the wafer W". Thereby, the processing liquid or the like which is removed from the wafer W can flow toward the outside of the wafer W along the inclination of the first body portion 36, and the risk of contamination due to reattachment to the wafer W can be reduced. Further, the substrate holding portion 135 is on the lower side of the concave portion of the grip portion 135a, 135'a" (the portion in contact with the peripheral edge of the wafer W) on the back surface of the wafer W and the "claw" A gap between the lower ends of the portions 136, 136'" is formed by the interval between the "claw portions 136, 136'". By this, the processing liquid or the like supplied to the back side of the wafer W flows to the interval between the "claw portions 136, 136'", and the processing liquid or the like is prevented from colliding with the inclined surface and scattering.
4‧‧‧控制裝置
18‧‧‧控制部
19‧‧‧儲存部
33‧‧‧驅動部(旋轉驅動部)
34‧‧‧保持板
35‧‧‧基板保持構件
35a‧‧‧把持部
36‧‧‧第一本體部
36’‧‧‧第二本體部
36a‧‧‧第一側面部
36b‧‧‧第二側面部
36c‧‧‧第三側面部
36d‧‧‧頂面部
37‧‧‧尖端部
38‧‧‧液流引導部
40‧‧‧處理流體供給部(處理液供給手段)4‧‧‧Control device
18‧‧‧Control Department
19‧‧‧ Storage Department
33‧‧‧Drive unit (rotary drive unit)
34‧‧‧Maintenance board
35‧‧‧Substrate holding member
35a‧‧‧ Holding Department
36‧‧‧First Body Department
36'‧‧‧Second Body
36a‧‧‧First side section
36b‧‧‧Second side section
36c‧‧‧ third side
36d‧‧‧ top face
37‧‧‧ tip
38‧‧‧Flow Guide
40‧‧‧Processing fluid supply unit (treatment liquid supply means)
【圖1】 顯示依本實施態樣之基板處理系統的概略構成之圖式。 【圖2】 顯示依本實施態樣之處理單元的概略構成之圖式。 【圖3】 顯示本發明之處理單元的構成之縱剖面圖。 【圖4】(a)~(b) 顯示本發明之基板保持部的細節之立體圖。 【圖5】(a)~(c) 顯示藉由液流引導部所引導的處理液之流動的立體圖。 【圖6】(a)~(b) 顯示其他基板保持部之細節的立體圖。Fig. 1 is a view showing a schematic configuration of a substrate processing system according to this embodiment. Fig. 2 is a view showing a schematic configuration of a processing unit according to the present embodiment. Fig. 3 is a longitudinal sectional view showing the configuration of a processing unit of the present invention. Fig. 4 (a) to (b) are perspective views showing details of the substrate holding portion of the present invention. Fig. 5 (a) to (c) are perspective views showing the flow of the treatment liquid guided by the liquid flow guiding portion. Fig. 6 (a) to (b) are perspective views showing details of other substrate holding portions.
35‧‧‧基板保持構件 35‧‧‧Substrate holding member
35a‧‧‧把持部 35a‧‧‧ Holding Department
36‧‧‧第一本體部 36‧‧‧First Body Department
36’‧‧‧第二本體部 36’‧‧‧Second Body
36a‧‧‧第一側面部 36a‧‧‧First side section
36b‧‧‧第二側面部 36b‧‧‧Second side section
36c‧‧‧第三側面部 36c‧‧‧ third side
36d‧‧‧頂面部 36d‧‧‧ top face
37‧‧‧尖端部 37‧‧‧ tip
38‧‧‧液流引導部 38‧‧‧Flow Guide
Claims (12)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-236102 | 2014-11-21 | ||
| JP2014236102 | 2014-11-21 | ||
| JP2015-194880 | 2015-09-30 | ||
| JP2015194880A JP6416723B2 (en) | 2014-11-21 | 2015-09-30 | Substrate processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201624610A true TW201624610A (en) | 2016-07-01 |
| TWI631657B TWI631657B (en) | 2018-08-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104137799A TWI631657B (en) | 2014-11-21 | 2015-11-17 | Substrate processing system |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6416723B2 (en) |
| KR (1) | KR102388515B1 (en) |
| TW (1) | TWI631657B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113210322A (en) * | 2021-04-27 | 2021-08-06 | 华虹半导体(无锡)有限公司 | Wafer clamping device for single-wafer wet cleaning process chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6836913B2 (en) * | 2017-01-17 | 2021-03-03 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method, and storage medium |
| JP7004579B2 (en) * | 2018-01-15 | 2022-01-21 | 東京エレクトロン株式会社 | Board processing equipment, board processing method and storage medium |
| JP7438015B2 (en) | 2020-05-01 | 2024-02-26 | 東京エレクトロン株式会社 | Substrate processing equipment |
| CN113808993B (en) * | 2021-09-23 | 2023-11-24 | 华海清科股份有限公司 | Wafer clamping mechanism and wafer post-processing equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100947480B1 (en) * | 2007-10-08 | 2010-03-17 | 세메스 주식회사 | Spin head, chuck pin used in the spin head, and method for treating a substrate with the spin head |
| JP5301505B2 (en) | 2009-08-27 | 2013-09-25 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP5726686B2 (en) * | 2011-09-08 | 2015-06-03 | 東京エレクトロン株式会社 | Liquid processing apparatus and method for controlling liquid processing apparatus |
| JP6051919B2 (en) * | 2012-04-11 | 2016-12-27 | 東京エレクトロン株式会社 | Liquid processing equipment |
| JP6018404B2 (en) * | 2012-04-25 | 2016-11-02 | 株式会社荏原製作所 | Substrate processing equipment |
| JP6057334B2 (en) * | 2013-03-15 | 2017-01-11 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
-
2015
- 2015-09-30 JP JP2015194880A patent/JP6416723B2/en active Active
- 2015-11-17 TW TW104137799A patent/TWI631657B/en active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113210322A (en) * | 2021-04-27 | 2021-08-06 | 华虹半导体(无锡)有限公司 | Wafer clamping device for single-wafer wet cleaning process chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6416723B2 (en) | 2018-10-31 |
| KR102388515B1 (en) | 2022-04-20 |
| KR20160061263A (en) | 2016-05-31 |
| JP2016105459A (en) | 2016-06-09 |
| TWI631657B (en) | 2018-08-01 |
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