TWI630742B - Structure of flexible oled and method of manufacturing the same - Google Patents
Structure of flexible oled and method of manufacturing the same Download PDFInfo
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Abstract
一種可撓性有機發光二極體的結構及其製造方法。在所 述結構中,有機發光二極體位於第一光取出層上,阻障層位於第一光取出層與有機發光二極體之間,阻水氧結構層則包覆在有機發光二極體的表面,其中第一光取出層的厚度在10μm~20μm之間,且第一光取出層的水氣穿透率(Water vapor transmission rate,WVTR)在10-1g/m2 day以上。所述阻障層的厚度在100nm~1000nm之間,且所述阻障層的水氣穿透率(WVTR)小於10-4g/m2 day。 A structure of a flexible organic light emitting diode and a method of fabricating the same. In the structure, the organic light emitting diode is located on the first light extraction layer, the barrier layer is located between the first light extraction layer and the organic light emitting diode, and the water blocking oxygen structure layer is coated on the organic light emitting diode The surface of the body, wherein the thickness of the first light extraction layer is between 10 μm and 20 μm, and the water vapor transmission rate (WVTR) of the first light extraction layer is 10 −1 g/m 2 day or more. The barrier layer has a thickness between 100 nm and 1000 nm, and the barrier layer has a water vapor transmission rate (WVTR) of less than 10 −4 g/m 2 day.
Description
本發明是有關於一種可撓性有機發光二極體的技術,且特別是有關於一種可撓性有機發光二極體的結構及其製造方法。The present invention relates to a technique of a flexible organic light emitting diode, and more particularly to a structure of a flexible organic light emitting diode and a method of fabricating the same.
在現行可撓性有機發光二極體的封裝製程中,厚度至少有30微米(一般約50至100微米)的塑膠基板或超薄玻璃基板常被用來設置有機發光二極體,並於後續步驟中加上阻水氧結構層把有機發光二極體包覆在上述基板與阻水氧結構層之間。為了增加光取出效率,通常會在基板外側另外貼上一層光取出層。In the current flexible organic light-emitting diode packaging process, a plastic substrate or an ultra-thin glass substrate having a thickness of at least 30 micrometers (typically about 50 to 100 micrometers) is often used to set the organic light-emitting diode, and In the step, a water-blocking oxygen structural layer is added to coat the organic light-emitting diode between the substrate and the water-blocking oxygen structure layer. In order to increase the light extraction efficiency, a light extraction layer is usually additionally attached to the outside of the substrate.
然而,可撓性有機發光二極體的結構仍有進一步薄型化的需求,但是現行製程若是省略塑膠基板或超薄玻璃基板,恐有水氣滲漏的疑慮,但如果要避免封裝時的滲漏,使用狹縫式塗佈(slot die coating)之圖案化是有困難的。因此亟需發展新的製程與結構來達成上述需求。However, the structure of the flexible organic light-emitting diode still has a need for further thinning. However, if the current process omits the plastic substrate or the ultra-thin glass substrate, there is a fear of moisture leakage, but if the package is to be permeable. Leakage, it is difficult to pattern using slot die coating. Therefore, there is an urgent need to develop new processes and structures to meet these needs.
本發明提供一種可撓性有機發光二極體的結構之製造方法,能製作出無基板的薄型結構。The present invention provides a method of manufacturing a structure of a flexible organic light-emitting diode, which can produce a thin structure without a substrate.
本發明另提供一種可撓性有機發光二極體的結構,無基板且具有好的阻水氣能力。The invention further provides a structure of a flexible organic light-emitting diode, which has no substrate and has good water-blocking gas capability.
本發明的可撓性有機發光二極體的製造方法,包括在離型膜上形成光取出層,在所述光取出層上形成阻障層,在所述阻障層上形成有機發光二極體,形成阻水氧結構層包覆所述有機發光二極體的表面,之後去除所述離型膜。A method of manufacturing a flexible organic light-emitting diode according to the present invention includes forming a light extraction layer on a release film, forming a barrier layer on the light extraction layer, and forming an organic light emitting diode on the barrier layer And forming a water-blocking oxygen structural layer to coat the surface of the organic light-emitting diode, and then removing the release film.
本發明的可撓性有機發光二極體的結構則包括第一光取出層、有機發光二極體、阻障層以及阻水氧結構層。第一光取出層之厚度在10μm~20μm之間,且第一光取出層的水氣穿透率(Water vapor transmission rate,WVTR)在10-1 g/m2 day以上。有機發光二極體位於第一光取出層上,阻障層則位於第一光取出層與有機發光二極體之間,且阻障層與有機發光二極體直接接觸。所述阻障層的厚度在100nm~1000nm之間,且阻障層的水氣穿透率(WVTR)小於10-4 g/m2 day。至於阻水氧結構層是包覆在有機發光二極體的表面。The structure of the flexible organic light-emitting diode of the present invention includes a first light extraction layer, an organic light-emitting diode, a barrier layer, and a water-blocking oxygen structural layer. The thickness of the first light extraction layer is between 10 μm and 20 μm, and the water vapor transmission rate (WVTR) of the first light extraction layer is 10 −1 g/m 2 day or more. The organic light emitting diode is located on the first light extraction layer, and the barrier layer is located between the first light extraction layer and the organic light emitting diode, and the barrier layer is in direct contact with the organic light emitting diode. The barrier layer has a thickness between 100 nm and 1000 nm, and the barrier layer has a water vapor transmission rate (WVTR) of less than 10 −4 g/m 2 day. As for the water blocking oxygen structure layer, it is coated on the surface of the organic light emitting diode.
基於上述,本發明能在可撓性有機發光二極體的結構中省去厚度大的塑膠基板或超薄玻璃基板,還能確保結構的阻水氣能力,進而達成薄型化的結構。Based on the above, the present invention can eliminate the plastic substrate or the ultra-thin glass substrate having a large thickness in the structure of the flexible organic light-emitting diode, and can also ensure the water-blocking gas resistance of the structure, thereby achieving a thinned structure.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
在圖式中,各圖式繪示的是特定示範實施例中所使用的方法、結構及/或材料的通常性特徵。然而,所述圖式並不侷限於下列實施例的結構或特徵,且這些圖式不應被解釋為界定或限制由這些示範實施例所涵蓋的範圍或性質。舉例來說,為了清楚起見,各膜層、區域及/或結構的相對厚度及位置可能縮小或放大。In the drawings, the figures depict typical features of the methods, structures, and/or materials used in the particular exemplary embodiments. However, the drawings are not limited to the structures or features of the following embodiments, and the drawings are not to be construed as limiting or limiting the scope or properties covered by the exemplary embodiments. For example, the relative thickness and location of layers, regions, and/or structures may be reduced or enlarged for clarity.
在各圖式中使用相似或相同的元件符號傾向於標示相似或相同元件或特徵的存在。圖式中的相似元件符號標示相似的元件並且將省略其贅述。The use of similar or identical component symbols in the various drawings is intended to indicate the presence of the same or the same elements or features. Similar component symbols in the drawings indicate similar elements and their description will be omitted.
應理解的是,雖然本文使用「第一」、「第二」等來描述不同的構件及/或膜層,但是這些構件及/或膜層不應當受限於這些詞彙。而是,這些詞彙僅用於區別一構件及/或膜層與另一構件及/或膜層。因此,以下所討論之第一構件及/或膜層可以被稱為第二構件及/或膜層而不違背示範實施例的教示。It should be understood that although "first," "second," and the like are used herein to describe various components and/or layers, these components and/or layers are not limited to these terms. Instead, these terms are only used to distinguish one component and/or film layer from another component and/or film layer. Thus, the first component and/or film layer discussed below may be referred to as a second component and/or film layer without departing from the teachings of the exemplary embodiments.
圖1A至圖1E是依照本發明的一實施例的一種可撓性有機發光二極體的製造流程剖面示意圖。1A to 1E are schematic cross-sectional views showing a manufacturing process of a flexible organic light emitting diode according to an embodiment of the invention.
請參照圖1A,先形成第一光取出層100在由基層(base film)102和離型層104構成之離型膜106上,其中第一光取出層100的厚度約在10μm~20μm之間,且第一光取出層100的水氣穿透率(WVTR)在10-1 g/m2 day以上,如1g/m2 day~10g/m2 day之間。在本實施例中,第一光取出層100的形成例如在離型膜106上先塗佈約數微米(如2μm~3μm)厚的散射粒子108,再在散射粒子108上塗佈約數微米(如5μm~10μm)厚的平坦層110,其中散射粒子108例如SiO2 或其他適合的材質;而平坦層110包括如SiOX :C摻雜鈦(Ti)或鋯(Zr)粒子的主要成分,以調整並配合後續形成的各層之折射率並具有阻水氣能力。平坦層110的折射率例如為1.75,且這種第一光取出層具有1.8X或1.8X以上的光取出效率。Referring to FIG. 1A, a first light extraction layer 100 is first formed on a release film 106 composed of a base film 102 and a release layer 104, wherein the thickness of the first light extraction layer 100 is between about 10 μm and 20 μm. And the water vapor transmission rate (WVTR) of the first light extraction layer 100 is 10 -1 g / m 2 day or more, such as between 1 g / m 2 day ~ 10 g / m 2 day. In the present embodiment, the first light extraction layer 100 is formed by, for example, coating a plurality of micrometers (eg, 2 μm to 3 μm) of scattering particles 108 on the release film 106, and then coating the scattering particles 108 by a few micrometers (eg, a 5 μm to 10 μm thick flat layer 110 in which scattering particles 108 are, for example, SiO 2 or other suitable material; and the planar layer 110 comprises a main component such as SiO X :C doped titanium (Ti) or zirconium (Zr) particles, Adjust and match the refractive index of the subsequently formed layers and have water blocking ability. The refractive index of the flat layer 110 is, for example, 1.75, and such a first light extraction layer has a light extraction efficiency of 1.8X or more.
此外,在形成第一光取出層100之前,也可選擇在離型膜106下設置支撐基板(未繪示),以增進操作性。在另一實施例中,形成第一光取出層100的方式也可改用具微透鏡或具散射粒子的保護膜(OC film)作為光取出層,並將其貼附在離型膜106上,這種光取出層具有1.5X的光取出效率。In addition, before forming the first light extraction layer 100, a support substrate (not shown) may be optionally disposed under the release film 106 to improve operability. In another embodiment, the first light extraction layer 100 may be formed by using a microlens or a protective film (OC film) with scattering particles as a light extraction layer, and attaching it to the release film 106. This light extraction layer has a light extraction efficiency of 1.5X.
然後,請參照圖1B,在第一光取出層100上形成第一阻障層112,且形成第一阻障層112的方法例如電漿化學氣相沉積製程(PECVD)。所述第一阻障層112的厚度在100nm~1000nm之間,且第一阻障層112的水氣穿透率(WVTR)小於10-4 g/m2 day,如小於10-6 g/m2 day。上述第一阻障層112例如氮氧化矽(SiOxNy)層、氮化矽(SiNz)層或其組合,且可藉由調整第一阻障層112的材料來改變其折射率,以與後續形成的各層之折射率匹配。舉例來說,SiNz一般製程是以SiH4 /N2 的體積比例混成形成,其中體積比例介於0.17~1.67,其中當體積比值為0.17時,其折射率約為1.6,當體積比值為1.67時,其折射率約為2.3,因此所形成之SiNz的折射率介於1.6~2.3之間;SiOxNy的折射率則如下表一。Then, referring to FIG. 1B, a first barrier layer 112 is formed on the first light extraction layer 100, and a method of forming the first barrier layer 112 is performed, for example, a plasma chemical vapor deposition process (PECVD). The thickness of the first barrier layer 112 is between 100 nm and 1000 nm, and the water vapor permeability (WVTR) of the first barrier layer 112 is less than 10 −4 g/m 2 day, such as less than 10 -6 g/ m 2 day. The first barrier layer 112 is, for example, a yttrium oxynitride (SiOxNy) layer, a tantalum nitride (SiNz) layer, or a combination thereof, and the refractive index of the first barrier layer 112 can be changed to change its refractive index to form a subsequent The refractive indices of the various layers match. For example, the general SiNz process is formed by mixing a volume ratio of SiH 4 /N 2 , wherein the volume ratio is between 0.17 and 1.67, wherein when the volume ratio is 0.17, the refractive index is about 1.6, and when the volume ratio is 1.67. The refractive index is about 2.3, so the refractive index of the formed SiNz is between 1.6 and 2.3; the refractive index of SiOxNy is as shown in Table 1.
表一
因此,如果第一阻障層112上方所形成的陽極層是IZO (折射率約1.9),則第一阻障層112可以是單一SiNz層、單一SiOxNy層或者一層SiNz層與一層SiOxNy層的組合。另一方面,如果第一阻障層112上方所形成的陽極層是ITO (折射率約1.74),則第一阻障層112可以是單一SiOxNy層。但本發明並不限於此。Therefore, if the anode layer formed over the first barrier layer 112 is IZO (refractive index of about 1.9), the first barrier layer 112 may be a single SiNz layer, a single SiOxNy layer, or a combination of a SiNz layer and a SiOxNy layer. . On the other hand, if the anode layer formed over the first barrier layer 112 is ITO (refractive index of about 1.74), the first barrier layer 112 may be a single SiOxNy layer. However, the invention is not limited to this.
然後,請參照圖1C,在第一阻障層112上形成有機發光二極體114,且有機發光二極體114一般包括陽極層116、有機發光層118與陰極層120。在本實施例中,形成所述有機發光二極體114的步驟包括利用濺鍍形成陽極層116,再利用蒸鍍在所述陽極層116上依序形成有機發光層118與陰極層120。雖然圖1C中顯示陽極層116、有機發光層118與陰極層120,但是應知有機發光二極體114也可包括其他已知的技術特徵與構造。Then, referring to FIG. 1C , an organic light emitting diode 114 is formed on the first barrier layer 112 , and the organic light emitting diode 114 generally includes an anode layer 116 , an organic light emitting layer 118 , and a cathode layer 120 . In this embodiment, the step of forming the organic light-emitting diode 114 includes forming the anode layer 116 by sputtering, and sequentially forming the organic light-emitting layer 118 and the cathode layer 120 on the anode layer 116 by evaporation. Although the anode layer 116, the organic light-emitting layer 118, and the cathode layer 120 are shown in FIG. 1C, it is understood that the organic light-emitting diode 114 may also include other known technical features and configurations.
接著,請參照圖1D,形成阻水氧結構層122包覆有機發光二極體114的表面。在本實施例中,形成阻水氧結構層122的步驟包括先在陰極層120的表面與有機發光層118的側面形成阻水氧薄膜124,再於第一阻障層112以及阻水氧薄膜124上形成面封装(face seal)層126,然後可在面封装層126上形成金屬箔片128。面封装層126可為市售品,其中之折射率介於1.5~1.6間,但不以此為限。然而本發明並不限於此。此外,阻水氧結構層122也可不含金屬箔片128。Next, referring to FIG. 1D, the water blocking oxygen structure layer 122 is formed to cover the surface of the organic light emitting diode 114. In this embodiment, the step of forming the water blocking oxygen structure layer 122 includes first forming a water blocking oxygen film 124 on the surface of the cathode layer 120 and the side surface of the organic light emitting layer 118, and then the first barrier layer 112 and the water blocking oxygen film. A face seal layer 126 is formed on 124, and a metal foil 128 can then be formed on the face pack layer 126. The surface encapsulation layer 126 can be a commercially available product, wherein the refractive index is between 1.5 and 1.6, but not limited thereto. However, the invention is not limited thereto. In addition, the water blocking oxygen structure layer 122 may also be free of the metal foil 128.
最後,請參照圖1E,去除圖1D的離型膜106,即可得到可撓性有機發光二極體的結構。Finally, referring to FIG. 1E, the release film 106 of FIG. 1D is removed to obtain the structure of the flexible organic light-emitting diode.
在圖1E中,有機發光二極體114位於第一光取出層100上,第一阻障層112位於第一光取出層100與有機發光二極體114之間,阻水氧結構層122則包覆在有機發光二極體114的表面。因此,本實施例的可撓性有機發光二極體的結構無需傳統厚度約數十微米厚的塑膠基板或超薄玻璃基板,即可達成薄型化且具阻水氣能力之結構。In FIG. 1E, the organic light emitting diode 114 is located on the first light extraction layer 100, the first barrier layer 112 is located between the first light extraction layer 100 and the organic light emitting diode 114, and the water blocking oxygen structure layer 122 is The surface of the organic light emitting diode 114 is coated. Therefore, the structure of the flexible organic light-emitting diode of the present embodiment can achieve a structure that is thinner and has a water vapor barrier capability without requiring a plastic substrate or an ultra-thin glass substrate having a thickness of about several tens of micrometers.
圖1F是依照本發明的另一實施例的一種可撓性有機發光二極體的結構的剖面示意圖,其中使用與上一實施例相同的元件符號來表示相似或相同的元件。1F is a schematic cross-sectional view showing the structure of a flexible organic light-emitting diode according to another embodiment of the present invention, in which the same reference numerals are used to denote similar or identical elements.
請參照圖1F,本實施例的可撓性有機發光二極體的結構與圖1E相比,沒有金屬箔片128,因為只要阻水氣能力足夠,則阻水氧結構層可以只由阻水氧薄膜124和面封装層126所組成。另外,於有機發光二極體114相對側的所述第一光取出層100的表面設置有第二阻障層200、光學膠202和防爆膜204。第二阻障層200是設於第一光取出層100與防爆膜204之間,而光學膠202是介於防爆膜204與第二阻障層200之間,其中第二阻障層200的厚度例如在100nm~1000nm之間、水氣穿透率(WVTR) 例如小於10-4 g/m2 day。光學膠202則可使用類似面封装層126的材料,其中之折射率介於1.5~1.6間,但不以此為限。至於防爆膜204例如由聚酯薄膜加上硬塗層(hardcoat)所組成的結構層。Referring to FIG. 1F, the structure of the flexible organic light-emitting diode of the present embodiment has no metal foil 128 compared with FIG. 1E, because the water-blocking oxygen structural layer can only be blocked by water as long as the water-blocking gas capacity is sufficient. The oxygen film 124 and the surface encapsulation layer 126 are composed. In addition, a second barrier layer 200, an optical adhesive 202, and an explosion-proof film 204 are disposed on the surface of the first light extraction layer 100 on the opposite side of the organic light-emitting diode 114. The second barrier layer 200 is disposed between the first light extraction layer 100 and the explosion-proof film 204, and the optical adhesive 202 is between the explosion-proof film 204 and the second barrier layer 200, wherein the second barrier layer 200 The thickness is, for example, between 100 nm and 1000 nm, and the water vapor transmission rate (WVTR) is, for example, less than 10 -4 g/m 2 day. The optical adhesive 202 can use a material similar to the surface encapsulation layer 126, wherein the refractive index is between 1.5 and 1.6, but not limited thereto. As for the explosion-proof membrane 204, for example, a structural layer composed of a polyester film plus a hard coat.
圖1G是依照本發明的又一實施例的一種可撓性有機發光二極體的結構的剖面示意圖,其中使用與上一實施例相同的元件符號來表示相似或相同的元件。1G is a schematic cross-sectional view showing the structure of a flexible organic light emitting diode according to still another embodiment of the present invention, wherein the same reference numerals are used to denote the same or the same elements as in the previous embodiment.
請參照圖1G,本實施例的可撓性有機發光二極體的結構與圖1E相比,沒有金屬箔片128,因為能藉由使用阻水氣能力更好的面封装層300來取代圖1E的面封装層126。另外,與圖1F相比,防爆膜204改為第二光取出層302,其可以是具微透鏡304或具散射粒子(未繪示)的保護膜(OC film),進而增加光取出效率。Referring to FIG. 1G, the structure of the flexible organic light emitting diode of the present embodiment is different from that of FIG. 1E, and there is no metal foil 128 because the surface encapsulating layer 300 having better water blocking ability can be used instead of the drawing. Surface encapsulation layer 126 of 1E. In addition, compared with FIG. 1F, the explosion-proof film 204 is changed to the second light extraction layer 302, which may be a microlens 304 or an OC film with scattering particles (not shown), thereby increasing light extraction efficiency.
綜上所述,根據本發明的結構之製程,能製作出無基板的薄型結構,並維持阻水氣能力且達到更好的光取出效率。In summary, according to the process of the structure of the present invention, a thin structure without a substrate can be fabricated, and the water blocking ability can be maintained and a better light extraction efficiency can be achieved.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧第一光取出層100‧‧‧First light extraction layer
102‧‧‧基層102‧‧‧ grassroots
104‧‧‧離型層104‧‧‧ release layer
106‧‧‧離型膜106‧‧‧ release film
108‧‧‧散射粒子108‧‧‧ scattering particles
110‧‧‧平坦層110‧‧‧flat layer
112‧‧‧第一阻障層112‧‧‧First barrier layer
114‧‧‧有機發光二極體114‧‧‧Organic Luminescent Diodes
116‧‧‧陽極層116‧‧‧ anode layer
118‧‧‧有機發光層118‧‧‧Organic light-emitting layer
120‧‧‧陰極層120‧‧‧ cathode layer
122‧‧‧阻水氧結構層122‧‧‧Water-blocking oxygen structural layer
124‧‧‧阻水氧薄膜124‧‧‧Water-blocking oxygen film
126、300‧‧‧面封装層126, 300‧‧‧ face encapsulation layer
128‧‧‧金屬箔片128‧‧‧metal foil
200‧‧‧第二阻障層200‧‧‧second barrier layer
202‧‧‧光學膠202‧‧‧Optical adhesive
204‧‧‧防爆膜204‧‧‧Explosion-proof membrane
302‧‧‧第二光取出層302‧‧‧Second light extraction layer
304‧‧‧微透鏡304‧‧‧Microlens
圖1A至圖1E是依照本發明的一實施例的一種可撓性有機發光二極體的製造流程剖面示意圖。 圖1F是依照本發明的另一實施例的一種可撓性有機發光二極體的結構的剖面示意圖。 圖1G是依照本發明的又一實施例的一種可撓性有機發光二極體的結構的剖面示意圖。1A to 1E are schematic cross-sectional views showing a manufacturing process of a flexible organic light emitting diode according to an embodiment of the invention. 1F is a schematic cross-sectional view showing the structure of a flexible organic light emitting diode according to another embodiment of the present invention. 1G is a schematic cross-sectional view showing the structure of a flexible organic light emitting diode according to still another embodiment of the present invention.
Claims (16)
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CN102057750B (en) * | 2008-04-09 | 2013-06-05 | 新加坡科技研究局 | Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices |
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