TWI487074B - Flexible electronic device and manufacturing method of the same - Google Patents

Description

Flexible electronic device and method of manufacturing same

The present disclosure relates to a flexible electronic device and a method of fabricating the same, and more particularly to a flexible electronic device having a barrier structure for blocking water and oxygen and a method of manufacturing the same.

A flexible organic light-emitting diode display cannot be fabricated by using a glass substrate (hard substrate) for packaging a glass substrate, and a flexible substrate package must be used. However, the flexible substrate (for example, a plastic substrate) has a poor effect on blocking moisture and oxygen, and the organic light-emitting diode is very sensitive to moisture, so it is necessary to add a structure that blocks moisture in the organic light-emitting diode display. .

A common way is to provide a barrier layer on the flexible substrate to achieve the effect of blocking moisture. However, if a single-layer barrier layer having a relatively high thickness is provided, although it has a good effect of blocking moisture, the stress may be strong, and the display may be broken when bent. If a barrier layer of a multi-layer structure is provided, there is a problem that the process is complicated and time consuming. Therefore, how to provide a soft organic light-emitting diode display having a simple structure, simplifying the process, and maintaining a good moisture barrier effect is one of the subjects of the related industry.

The disclosure relates to a flexible electronic device and a method of fabricating the same. In a flexible electronic device, by forming an interface layer on an electronic component and Between the barrier layers or between the flexible substrate and the barrier layer, the adhesion between the electronic component and the barrier layer or between the flexible substrate and the barrier layer can be increased, so that it is not necessary to provide a multilayer barrier layer ( For example, a barrier layer of three or more layers can achieve a good effect of blocking moisture and oxygen.

According to an embodiment of the present disclosure, a flexible electronic device is proposed. The flexible electronic device includes a first flexible substrate, an electronic component, a first interface layer, and a first barrier layer. The material of the first interface layer comprises a combination of one or more metal elements and one or more inorganic metal oxides. The electronic component is disposed on the first flexible substrate, the first interface layer is formed on the electronic component, and the first barrier layer is formed on the first interface layer.

According to another embodiment of the present disclosure, a method of fabricating a flexible electronic device is provided. The manufacturing method of the flexible electronic device includes: providing a first flexible substrate; disposing an electronic component on the first flexible substrate; forming a first interface layer by a thermal evaporation process And on the electronic component; and forming a first barrier layer on the first interface layer.

In order to better understand the above and other aspects of the present disclosure, the preferred embodiments are described below in detail with reference to the accompanying drawings.

In an embodiment of the disclosure, in the flexible electronic device, the interface layer is formed between the electronic component and the barrier layer or the flexible substrate and the barrier Between the layers, the adhesion between the electronic component and the barrier layer or between the flexible substrate and the barrier layer can be increased, so that it is not necessary to provide a multilayer barrier layer (for example, a barrier layer of three or more layers). Good barrier to moisture and oxygen. Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numerals are used to designate the same or similar parts. It is to be noted that the drawings have been simplified to illustrate the details of the embodiments, and the detailed description of the embodiments is for illustrative purposes only and is not intended to limit the scope of the disclosure. Those having ordinary knowledge may modify or change the structures as needed in accordance with the actual implementation.

FIG. 1A is a schematic diagram of a flexible electronic device according to a first embodiment of the present disclosure. Referring to FIG. 1A , the flexible electronic device 100 includes a first flexible substrate 110 , an electronic component 120 , a first interface layer 130 , and a first barrier layer 140 . The electronic component 120 is disposed on the first flexible substrate, the first interface layer 130 is formed on the electronic component 120, and the first barrier layer 140 is formed on the first interface layer 130. The material of the first interface layer 130 includes a combination of one or more metal elements and one or more inorganic metal oxides. The first interface layer 130 is formed between the electronic component 120 and the first barrier layer 140, which can increase the adhesion between the electronic component 120 and the first barrier layer 140, and improve the electronic component 120 and the first barrier layer 140. The sealing property further enhances the effect of blocking the moisture and oxygen of the first barrier layer 140 and prolongs the service life of the electronic component 120. Moreover, the first interface layer 130 is formed between the electronic component 120 and the first barrier layer 140, and a multi-layer barrier layer (for example, a barrier layer of three or more layers) is not required to achieve good moisture and oxygen barrier. Effect.

In the embodiment, as shown in FIG. 1A , the first interface layer 130 is, for example, a coated electronic component 120 . The first barrier layer 140 is formed on the first interface layer 130 and covers the first interface layer 130 and the electronic component 120 . The first barrier layer 140 is not in contact with the electronic component 120.

In the embodiment, the first flexible substrate 110 is, for example, a plastic polymer substrate or a flexible metal substrate. In an embodiment, the electronic component 120 is, for example, an organic electronic component such as an organic light emitting diode, an organic transistor, or an organic solar cell.

In the examples, the metal element is, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), or an alloy of any two or more of the foregoing. In the examples, the inorganic metal oxide is, for example, indium tin oxide (ITO), silver oxide (Ag ₂ O), copper oxide (CuO), molybdenum oxide (MoO ₃ ), tungsten oxide (WO ₃ ), titanium oxide (TiO). ₂ ), vanadium oxide (V ₂ O ₅ ) or a combination of any two or more of the foregoing. In the embodiment, at least molybdenum oxide (MoO ₃ ), tungsten oxide (WO ₃ ), and vanadium oxide (V ₂ O ₅ ) may be formed on the electronic component 120 via a thermal evaporation process.

In one embodiment, the material of the first interface layer 130 may, for example, further comprise one or more inorganic non-metallic elements. In the examples, the inorganic non-metal element is, for example, an alloy of selenium (Se), sulfur (S), tellurium (Te) or a metal of any two or more of the foregoing.

In one embodiment, the material of the first interface layer 130 may include, for example, one or more organometallic compounds. In the examples, the organometallic compound is, for example, an iridium complex, an osmium complex, a rhenium complex, or a combination of any two or more of the foregoing. In the examples, the organometallic compound is subjected to thermal evaporation. The process is formed on the electronic component 120 such that the organometallic compound does not decompose during the formation of the first interfacial layer 130, and the compound structure of the organometallic compound formed on the electronic component 120 can be maintained.

In the embodiment, as described above, the material of the first interface layer 130 may be a composite material including a plurality of the foregoing materials, so that in addition to increasing the adhesion between the electronic component 120 and the first barrier layer 140, it is still possible to The material has different materials and has special characteristics. For example, the composite material included in the first interface layer 130 may also have conductive properties, such as molybdenum oxide/silver (MoO ₃ /Ag) composite material, molybdenum oxide/copper (MoO ₃ /Cu) composite material or aluminum oxide. / Aluminum (Al ₂ O ₃ /Al) composite.

Taking the electronic component 120 as an example of an organic light emitting diode (OLED), as shown in FIG. 1A, the uppermost layer of the organic light emitting diode has a cathode 120a, which is thinner. The structure is weak and the conductive properties are also poor. When the material of the first interface layer 130 comprises a conductive material, such as a conductive metal element of gold, silver or copper, or a conductive composite material of molybdenum oxide/silver, molybdenum oxide/copper or aluminum oxide/aluminum, Correspondingly, the thickness of the cathode 120a is increased, and the conductive property is improved, thereby further prolonging the life of the component.

In an embodiment, a barrier layer (not shown) may be further disposed between the first interface layer 130 and the first barrier layer 140. Thus, the two barrier layers are combined with a layer of the interface layer. Better moisture and oxygen barriers can be achieved. In the embodiment of the present disclosure, only one or two barrier layers are required to be combined with one layer of the interface layer, so that a good barrier effect of moisture and oxygen can be achieved.

In an embodiment, the material of the first barrier layer 140 is, for example, an inorganic ceramic material. The material is, for example, a metal oxide or a metal nitride and has no conductivity. For example, the material of the first barrier layer 140 is, for example, hafnium oxide, tantalum nitride or hafnium oxynitride. In the embodiment, the material of the first barrier layer 140 is different from the material of the first interface layer 130.

As shown in FIG. 1A, the flexible electronic device 100 further includes an encapsulation adhesive layer 150 and a second flexible substrate 160. The encapsulant layer 150 is formed on the first barrier layer 140. The second flexible substrate 160 is formed on the encapsulant layer 150.

In the embodiment, the material of the encapsulant layer 150 is a polymer material, such as polymethyl methacrylate (PMMS), polystyrene (PS) or epoxy resin, and the encapsulant The layer 150 is used to bond the second flexible substrate 160. In the embodiment, the encapsulant layer 150 is formed of an organic material, and thus can also be regarded as an organic layer. When the first barrier layer 140 of the single-layer structure is used, it helps to relieve the stress of the overall structure and prevent breakage.

In an embodiment, the second flexible substrate 160 is, for example, a flexible cover plate made of a material such as a plastic polymer or a flexible metal material, which may be transparent, translucent or opaque.

FIG. 1B is a schematic diagram of a flexible electronic device according to a second embodiment of the present disclosure. Referring to FIG. 1B , the difference between the embodiment and the embodiment of FIG. 1A is that, in the flexible electronic device 100 ′, the first interface layer 130 ′ is formed on the upper surface of the electronic component 120 , and the first interface layer 130 ′ The electronic component 120 is not completely covered. The first barrier layer 140 is formed on the first interface layer 130' and covers the first interface layer 130' and the electronic component 120. The first barrier layer 140 is in contact with the side of the electronic component 120. In the embodiment, the first The material of the surface layer 130' is the same as that of the first interface layer 130 in the foregoing embodiment, and details are not described herein again.

FIG. 2 is a schematic diagram of a flexible electronic device according to a third embodiment of the present disclosure. Referring to FIG. 2, the difference between the embodiment and the embodiment of FIG. 1A is that the flexible electronic device 200 further includes a second interface layer 230 and a second barrier layer 240. The second interface layer 230 is formed on the first On the flexible substrate 110, a second barrier layer 240 is formed between the second interface layer 230 and the electronic component 120.

As shown in FIG. 2, in the embodiment, the second interface layer 230 is formed between the first flexible substrate 110 and the second barrier layer 240, and the first flexible substrate 110 and the second barrier layer may be added. The adhesion between the 240 improves the sealing property of the two, thereby improving the effect of the second barrier layer 240 blocking moisture and oxygen, and prolonging the service life of the electronic component 120. Moreover, the second interface layer 230 is formed between the first flexible substrate 110 and the second barrier layer 240, and a multi-layer barrier layer is disposed on the first flexible substrate 110 to achieve good moisture resistance. With the effect of oxygen. The same components as those in the foregoing embodiments are denoted by the same reference numerals, and the related descriptions of the same components are referred to the foregoing, and are not described herein again.

In the embodiment, the material of the second interface layer 230 is the same as that of the first interface layer 130 in the foregoing embodiment, and details are not described herein again. In practical applications, the first interface layer 130 and the second interface layer 230 may be of the same or different materials.

In the embodiment, the material of the second barrier layer 240 is the same as that of the first barrier layer 140 in the foregoing embodiment, and details are not described herein again. In the embodiment, the material of the second barrier layer 240 is different from the material of the second interface layer 230.

3 is a schematic diagram of a flexible electronic device according to a fourth embodiment of the present disclosure, and FIG. 4 is a schematic diagram showing a flexible electronic device according to a fifth embodiment of the present disclosure. Referring to FIGS. 3 to 4, the fourth embodiment and the fifth embodiment differ from the embodiment of FIG. 2 in that the flexible electronic device 300, 300' further includes a functional film 370, which is functional. The film 370 is formed between the first flexible substrate 110 and the electronic component 120.

In the fourth embodiment, as shown in FIG. 3, the functional film 370 is formed between the second barrier layer 240 and the electronic component 120. In the fifth embodiment, as shown in FIG. 4, the functional film 370 is formed between the first flexible substrate 110 and the second interface layer 230. In an embodiment, the functional film 370 is, for example, a color filter or a touch panel.

FIG. 5 is a schematic diagram of a flexible electronic device according to a sixth embodiment of the present disclosure. Referring to FIG. 5, the difference between the embodiment and the embodiment of FIG. 3 is that the flexible electronic device 500 further includes a third interface layer 530 and a third barrier layer 540. The third interface layer 530 is formed in the second layer. On the flexible substrate 160, a third barrier layer 540 is formed between the third interface layer 530 and the encapsulant layer 150.

As shown in FIG. 5, in the embodiment, the third interface layer 530 is formed between the second flexible substrate 160 and the third barrier layer 540, and the second flexible substrate 160 and the third barrier layer may be added. The adhesion between the 540 improves the sealing property of the two, thereby improving the effect of the third barrier layer 540 blocking moisture and oxygen, and prolonging the service life of the electronic component 120. Moreover, the third interface layer 530 is formed between the second flexible substrate 160 and the third barrier layer 540, and a multi-layer barrier layer is disposed on the second flexible substrate 160 to achieve good moisture resistance. With the effect of oxygen. In the present embodiment and the foregoing The same components are used for the same components, and the related descriptions of the same components are referred to the foregoing, and are not described herein again.

In the embodiment, the material of the third interface layer 530 is the same as that of the first interface layer 130 in the foregoing embodiment, and details are not described herein again. In practical applications, the first interface layer 130, the second interface layer 230, and the third interface layer 530 may be the same or different materials.

In the embodiment, the material of the third barrier layer 540 is the same as that of the first barrier layer 140 in the foregoing embodiment, and details are not described herein again. In the embodiment, the material of the third barrier layer 540 is different from the material of the third interface layer 530.

FIG. 6 is a schematic diagram of a flexible electronic device according to a seventh embodiment of the present disclosure, and FIG. 7 is a schematic diagram of a flexible electronic device according to an eighth embodiment of the present disclosure. Referring to FIGS. 6-7, the difference between the seventh embodiment and the eighth embodiment and the fifth embodiment is that the flexible electronic device 600, 600' further includes a functional film 670, and the functional film 670 is formed on Between the second flexible substrate 160 and the encapsulant layer 150.

In the seventh embodiment, as shown in FIG. 6, a functional film 670 is formed between the third barrier layer 540 and the encapsulant layer 150. In the eighth embodiment, as shown in FIG. 7, a functional film 670 is formed between the second flexible substrate 160 and the third interface layer 530. In an embodiment, the functional film 670 is, for example, a color filter or a touch panel.

The following examples are further described. In the following examples and comparative examples 1 and 2, a simplified structural configuration is series, wherein the structure of the comparative example 1 does not include the first interface layer 130, and the structure of the comparative example 2 does not include the first interface layer 130 and the encapsulant layer 150. . However, the following examples are merely illustrative. It should not be construed as limiting the implementation of the disclosure.

(1) Structural configuration of the embodiment: first flexible substrate 110 / electronic component 120 / first interface layer 130 / barrier layer / first barrier layer 140 / package adhesive layer 150.

(2) Structural configuration of Comparative Example 1: First flexible substrate 110 / electronic component 120 / barrier layer / first barrier layer 140 / package adhesive layer 150.

(3) Structural configuration of the embodiment: first flexible substrate 110 / electronic component 120 / barrier layer / first barrier layer 140.

In Table 1 below, the water vapor transmission rate (WVTR) data of the samples of Examples and Comparative Examples 1 and 2 were measured under conditions of 60 ° C / 90% relative humidity (RH), in which bending was performed. The conditions of the bending operation are a bending bending radius of 5 cm and a bending number of 100 times.

The data in the following Table 2 is the ratio of the area of the unit pixel light-emitting region measured after the samples of the examples and the comparative examples were allowed to stand for a fixed period of time.

As can be seen from Table 1, in Comparative Examples 1 and 2, the water vapor transmission rate before the bending operation was between 2.1 ^* 10 ^-2 and 5.1 ^* 10 ^-2 , and after the bending operation, the water was The gas penetration rate has risen sharply. In contrast, in the embodiment of the present disclosure, the water vapor transmission rate before the bending operation is at least less than 5.1 ^* 10 ^-4 , and the effect of blocking moisture is more than 100 times that of the comparative examples 1 to 2, And even after the bending operation, the water vapor permeability did not change significantly. In other words, the sample in the embodiment of the present disclosure not only has a good moisture barrier effect, but also has good resistance to stress.

As can be seen from Table 2, in Comparative Example 2, after standing, the area of the light-emitting area was greatly reduced, indicating that the ability to block moisture was poor. In contrast, in the embodiment of the present disclosure, even after standing for 1000 hours, the area of the light-emitting area hardly changes, indicating that the ability to block moisture is good. In other words, the sample in the embodiment of the present disclosure has a good effect of blocking moisture even after standing for a long time.

The following is a method for manufacturing a flexible electronic device according to an embodiment. However, the steps are for illustrative purposes only and are not intended to limit the present invention. Those who have the usual knowledge can use these according to the actual implementation. The steps are modified or changed. Please refer to FIGS. 8A to 8D, 9A to 9CA, and 10A to 10C. 8A to 8D are schematic views showing a manufacturing method of a flexible electronic device according to an embodiment of the present invention. 9A to 9CA are schematic views showing a manufacturing method of a flexible electronic device according to another embodiment of the present invention. 10A to 10C are schematic views showing a manufacturing method of a flexible electronic device according to still another embodiment of the present invention.

The manufacturing process of the semiconductor structure 100 of Fig. 1A will be described below. Please refer to Figures 8A to 8D.

Referring to FIG. 8A, a first flexible substrate 110 is provided. Next, referring to FIG. 8B, the electronic component 120 is disposed on the first flexible substrate 110.

Referring to FIG. 8C, the first interface layer 130 is formed on the electronic component 120 by a thermal evaporation process, and the first barrier layer 140 is formed on the first interface layer 130. In the embodiment, the first barrier layer 140 needs to have a dense structure to achieve the effect of blocking moisture and oxygen. The first barrier layer 140 is, for example, a sputtering process, chemical vapor deposition (chemical vapor deposition, A CVD) process or any other process suitable for forming a dense structural film layer is formed on the first interface layer 130.

In general, the barrier layer must have a dense structure to achieve the effect of blocking moisture and oxygen, and thus is usually produced by, for example, sputtering or chemical vapor deposition. However, both the chemical vapor deposition process and the sputtering process generate plasma. When the barrier layer is formed directly on the electronic component (for example, an organic light-emitting diode), the plasma generated in the process may damage the electronic component. This disclosure In the embodiment of the disclosure, the first interface layer 130 is formed on the electronic component 120 by a thermal evaporation process, and the first barrier layer 140 is formed on the first interface layer 130. The first interface layer 130 can be used to protect the electrons. Element 120 achieves the effect of protecting electronic component 120 from plasma damage.

Furthermore, taking the electronic component 120 as an organic light-emitting diode as an example, the organic light-emitting diode is basically formed by a thermal evaporation process, so that the first interface layer 130 is formed in the organic light-emitting diode by a thermal evaporation process. (Electronic component 120) can be fabricated in the same process chamber as the organic light-emitting diode. No additional equipment is required, which simplifies the process steps and shortens the process time.

Next, referring to FIG. 8D, the encapsulation layer 150 is formed on the first barrier layer 140, and the second flexible substrate 160 is formed on the encapsulation layer 150. Thus far, the flexible electronic device 100 as shown in Fig. 8D (Fig. 1A) is formed.

The manufacturing process of the semiconductor structure 200 of Fig. 2 will be described below. Please refer to the 8C to 8D and 9A to 9C drawings at the same time.

Referring to FIG. 9A, a first flexible substrate 110 is provided. Next, a second interface layer 230 is formed on the first flexible substrate 110, and a second barrier layer 240 is formed on the second interface layer 230. In an embodiment, the second interface layer 230 is formed on the first flexible substrate 110 by, for example, a sputtering process, a chemical vapor deposition process, a thermal evaporation process, or any other suitable process. In an embodiment, the second barrier layer 240 is formed on the second interface layer 230, for example, by a sputtering process, a chemical vapor deposition process, or any other process suitable for forming a dense structural film layer.

Referring to FIG. 9B, the electronic component 120 is disposed on the second barrier layer 240. In an embodiment, the second barrier layer 240 is formed between the second interface layer 230 and the electronic component 120.

Next, referring to FIG. 9C, the first interface layer 130 is formed on the electronic component 120 by a thermal evaporation process in a manner similar to that shown in FIGS. 8C to 8D to form the first barrier layer 140. On the interface layer 130, the encapsulation layer 150 is formed on the first barrier layer 140, and the second flexible substrate 160 is formed on the encapsulation layer 150. Thus far, the flexible electronic device 200 as shown in Fig. 9C (Fig. 2) is formed.

In an embodiment, the functional film 370 may be selectively formed between the first flexible substrate 110 and the electronic component 120 to form the flexible electronic device 300 as shown in FIG. 3 or as shown in FIG. The flexible electronic device 300' is shown.

The manufacturing process of the semiconductor structure 500 of Fig. 5 will be described below. Please refer to FIG. 8C, FIG. 9A to FIG. 9B, and FIGS. 10A to 10C simultaneously.

Referring to FIG. 10A, a first flexible substrate 110 is formed, and a second interface layer 230 is formed on the first flexible substrate 110, in a manner similar to that shown in FIG. 8C and FIGS. 9A to 9B. Forming a second barrier layer 240 on the second interface layer 230, disposing the electronic component 120 on the second barrier layer 240, forming a first interface layer 130 on the electronic component 120 by a thermal evaporation process, and forming a first barrier layer Layer 140 is on first interface layer 130.

Next, please refer to FIGS. 10B-10C to form a package adhesive layer 150 on the first barrier layer 140 to form a second flexible substrate 160 on the package adhesive. On the material layer 150, a third interface layer 530 is formed on the second flexible substrate 160, and a third barrier layer 540 is formed between the third interface layer 530 and the encapsulant layer 150. In an embodiment, the third interface layer 530 is formed on the second flexible substrate 160 by, for example, a sputtering process, a chemical vapor deposition process, a thermal evaporation process, or any other suitable process. In an embodiment, the third barrier layer 540 is formed on the third interface layer 530, for example, by a sputtering process, a chemical vapor deposition process, or any other process suitable for forming a dense structural film layer.

In an embodiment, the manufacturing method for forming the third barrier layer 540 between the third interface layer 530 and the encapsulant layer 150 includes, for example, the following steps: as shown in FIG. 10B, providing the second flexible substrate 160 to form The third interface layer 530 is on the second flexible substrate 160, and the third barrier layer 540 is formed on the third interface layer 530. Next, as shown in FIG. 10C, the third barrier layer 540 and the encapsulant layer 150 are bonded. Thus far, the flexible electronic device 500 as shown in Fig. 10C (Fig. 5) is formed.

In an embodiment, the functional film 670 can also be selectively formed between the second flexible substrate 160 and the encapsulant layer 150 to form the flexible electronic device 600 as shown in FIG. Figure 7 shows a flexible electronic device 600'.

In summary, although the disclosure has been disclosed in the above embodiments, it is not intended to limit the scope of the disclosure. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the disclosure. Therefore, the scope of protection of this disclosure is subject to the definition of the scope of the appended claims.

100, 100', 200, 300, 300', 500, 600, 600' ‧ ‧ flexible electronic devices

110‧‧‧First flexible substrate

120‧‧‧Electronic components

120a‧‧‧ cathode

130, 130’‧‧‧ first interface layer

140‧‧‧First barrier layer

150‧‧‧Package layer

160‧‧‧Second flexible substrate

230‧‧‧Second interface layer

240‧‧‧second barrier layer

370, 670‧‧‧ functional film

530‧‧‧ third interface layer

540‧‧‧ third barrier layer

FIG. 1A is a schematic diagram of a flexible electronic device according to a first embodiment of the present disclosure.

FIG. 1B is a schematic diagram of a flexible electronic device according to a second embodiment of the present disclosure.

FIG. 2 is a schematic diagram of a flexible electronic device according to a third embodiment of the present disclosure.

FIG. 3 is a schematic diagram of a flexible electronic device according to a fourth embodiment of the present disclosure.

FIG. 4 is a schematic diagram of a flexible electronic device according to a fifth embodiment of the present disclosure.

FIG. 5 is a schematic diagram of a flexible electronic device according to a sixth embodiment of the present disclosure.

FIG. 6 is a schematic diagram of a flexible electronic device according to a seventh embodiment of the present disclosure.

FIG. 7 is a schematic diagram of a flexible electronic device according to an eighth embodiment of the present disclosure.

8A to 8D are schematic views showing a manufacturing method of a flexible electronic device according to an embodiment of the present invention.

9A to 9C are schematic views showing a manufacturing method of a flexible electronic device according to another embodiment of the present invention.

10A to 10C are schematic views showing a manufacturing method of a flexible electronic device according to still another embodiment of the present invention.

100‧‧‧Flexible electronic devices

110‧‧‧First flexible substrate

120‧‧‧Electronic components

120a‧‧‧ cathode

130‧‧‧First interface layer

140‧‧‧First barrier layer

150‧‧‧Package layer

160‧‧‧Second flexible substrate

Claims (18)

A flexible electronic device includes: a first flexible substrate; an electronic component disposed on the first flexible substrate; a first interface layer formed on the electronic In the component, the material of the first interface layer comprises a combination of one or more metal elements and one or more inorganic metal oxides, the first interface layer is a single layer structure; and a first barrier layer is formed On the first interface layer, the lower surface of the first interface layer is in contact with the electronic component, and the upper surface of the first interface layer is in contact with the first barrier layer. The flexible electronic device of claim 1, wherein the metal element is selected from the group consisting of gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), a group of tungsten (W) and a combination thereof selected from the group consisting of indium tin oxide (ITO), silver oxide, copper oxide, molybdenum oxide, tungsten oxide, titanium oxide, vanadium oxide, and the like The group formed by the combination. The flexible electronic device of claim 1, wherein the material of the first interface layer further comprises one or more inorganic non-metal elements selected from the group consisting of selenium (Se) and sulfur. A group consisting of (S), 锑 (Te), and combinations thereof. The flexible electronic device of claim 1, wherein the material of the first interface layer further comprises one or more organometallic compounds selected from the group consisting of iridium complexes. , a group of osmium complexes, rhenium complexes, and combinations thereof. The flexible electronic device according to claim 1, The material of the first interface layer comprises a conductive material. The flexible electronic device of claim 1, further comprising a functional film formed between the first flexible substrate and the electronic component. The flexible electronic device of claim 1, further comprising: a second interface layer formed on the first flexible substrate; and a second barrier layer formed on the second interface layer and Between the electronic components. The flexible electronic device of claim 1, further comprising: an encapsulation adhesive layer formed on the first barrier layer; and a second flexible substrate formed thereon Encapsulated on the layer of glue. The flexible electronic device of claim 8, further comprising: a third interface layer formed on the second flexible substrate; and a third barrier layer formed on the third interface layer and The encapsulant is between the layers of the glue. The flexible electronic device of claim 8, further comprising a functional film formed between the second flexible substrate and the encapsulant layer. A method for manufacturing a flexible electronic device, comprising: providing a first flexible substrate; and disposing an electronic component on the first flexible substrate; Forming a first interface layer on the electronic component by a thermal evaporation process, wherein the first interface layer is a single layer structure; and forming a first barrier layer on the first interface layer And a lower surface of the first interface layer is in contact with the electronic component, and an upper surface of the first interface layer is in contact with the first barrier layer. The method for manufacturing a flexible electronic device according to claim 11, wherein the material of the first interface layer comprises one or more metal elements, one or more inorganic non-metal elements, one or more inorganic metal oxides, One or more organometallic compounds or a combination of any two or more of the foregoing. The method for manufacturing a flexible electronic device according to claim 12, wherein the inorganic metal oxide is selected from the group consisting of indium tin oxide (ITO), silver oxide, copper oxide, molybdenum oxide, tungsten oxide, A group of titanium oxide, vanadium oxide, and combinations thereof. The method for manufacturing a flexible electronic device according to claim 11, further comprising: forming a functional film between the first flexible substrate and the electronic component. The method of manufacturing the flexible electronic device of claim 11, further comprising: forming a second interface layer on the first flexible substrate; and forming a second barrier layer on the second Between the interface layer and the electronic component. The method for manufacturing a flexible electronic device according to claim 11, further comprising: Forming a package adhesive layer on the first barrier layer; and forming a second flexible substrate on the package adhesive layer. The method for manufacturing a flexible electronic device according to claim 16, further comprising: forming a third interface layer on the second flexible substrate; and forming a third barrier layer on the third Between the interface layer and the encapsulant layer. The method for manufacturing a flexible electronic device according to claim 16, further comprising: forming a functional film between the second flexible substrate and the encapsulant layer.