TWI629742B - Process chamber and semiconductor device - Google Patents

Abstract

The invention provides a process chamber and a semiconductor device. The process chamber includes a chamber body having at least two process sub-chambers therein, and the at least two process sub-chambers are in communication. The process chamber and the semiconductor device provided by the invention provide at least two process sub-chambers on the chamber body, and the at least two process sub-chambers are kept in communication, so that each process sub-chamber can be in an internal process environment The wafers are processed simultaneously in a consistent manner, thereby increasing process efficiency and device throughput.

Description

Process chamber and semiconductor device

The present invention relates to the field of semiconductor device manufacturing technologies, and in particular, to a process chamber and a semiconductor device.

With the rapid development of the integrated circuit market, the demand for expanded chip capacity has brought new market opportunities to device manufacturers, and on the other hand, it has placed higher demands on the existing and forward-looking technical capabilities of device manufacturers. Equipment capacity refers to the number of good products produced during the working hours of the unit. It is an important technical parameter reflecting the processing capacity of the unit. The degassing device and the annealing device used in the manufacture of the integrated circuit need to cooperate with the lifting mechanism of the processing chamber to complete the transfer of the wafer before performing the corresponding process. How to improve the capacity of the device by shortening the film transfer time and reducing the non-process process time has become a major problem that the device manufacturer needs to solve.

As shown in FIG. 1a and FIG. 1b, the chamber body 100 of the existing process chamber has a single-chamber structure, and the chamber body 100 includes a chamber, a chamber transfer port 105, a docking mounting block 107, and a docking positioning pin 125. , air inlet 119, etc. The chamber body 100 is integrally processed from a piece of stainless steel or aluminum alloy blank. The chamber body 100 is positioned by the docking locating pin 125 and is fixedly mounted to the transfer chamber by the docking mounting block 107, which transfers the wafer between the chamber body 100 and the transfer chamber. The robot's assembly structure includes a robot, a wrist arm, an elbow arm, and a driver. The robot is a single hand and picks up one wafer at a time. The single-cavity process chamber can only process one wafer at a time, so the processing time for processing multiple wafers is long and the device throughput is low.

As shown in Fig. 1b, the process gas moves in the direction indicated by the arrow in Fig. 1b, i.e., the process gas enters the chamber from the air inlet 119 and enters the lower surface of the heater 300 through the long air intake structure. Then, it moves to the upper side of the heater 300 through the gap between the heater 300 and the chamber.

Although the above process chamber has been widely used in the field of semiconductor device manufacturing technology, since it is a single-cavity structure, only one wafer can be processed at a time, resulting in low processing capability and long process time, and thus the device throughput is low.

The present invention is directed to at least one of the problems in the prior art, and provides a process chamber and a semiconductor device for increasing device throughput.

In order to solve the above technical problem, the present invention adopts the following technical solutions: The present invention provides a process chamber including a chamber body, wherein at least two process sub-chambers are opened on the chamber body, and the at least two process sub-chambers are maintained Connected.

Wherein the at least two process sub-chambers comprise a first sub-chamber and a second sub-chamber, the first sub-chamber and the second sub-chamber being identical in structure and arranged side by side in a horizontal direction, and in both There is a connection chamber that connects the two.

Wherein, the process chamber further includes an air intake structure, the air intake structure is respectively connected to the first sub-chamber and the second sub-chamber, and can simultaneously be directed to the first sub-chamber and the second sub-chamber Conveying gas.

The air intake structure includes: an intake passage, a first intake ring, and a second intake ring; the first intake ring is disposed at an upper portion of the first sub-chamber for the first sub-chamber Conveying gas; the second intake ring is disposed at an upper portion of the second sub-chamber for conveying gas to the second sub-chamber; the intake passage is located in the chamber body, the first sub-chamber and The second sub-chamber is symmetrically disposed with respect to the intake passage, and the intake passage includes an air inlet, a first air outlet, and a second air outlet, and the air inlet is connected to an external air source, the first air outlet And the second air outlet is in communication with the first intake ring and the second intake ring, respectively.

Wherein the projection of the air inlet passage in a plane parallel to the chamber body is T-shaped or Y-shaped, wherein the air inlet is disposed at a bottom of the chamber body, and the first air outlet is located adjacent to the first One side of the sub-chamber, the second air outlet is located on a side adjacent to the second sub-chamber.

Wherein the first intake ring includes a first intake ring body, the second intake ring includes a second intake ring body, and the first intake ring body and the second intake ring body are respectively provided along the same And a gas passage well of the first intake ring and the second intake ring, respectively, are respectively connected to the first gas outlet and the second gas outlet.

Wherein, corresponding to the first intake ring, the number of the gas flow holes is plural and uniformly distributed along the circumferential direction of the first intake ring; corresponding to the second intake ring, the number of the gas flow holes It is plural and evenly distributed along the circumferential direction of the second intake ring.

Wherein, a diameter of the gas flow hole on the first intake ring toward the inner side of the first sub-chamber is larger than a diameter of the gas flow hole on the first intake ring toward the intake passage; The gas shimming hole on the gas ring faces the inner side of the second sub-chamber with a larger diameter than the gas shimming hole on the second intake ring toward the inner diameter of the intake passage.

a first gas storage region is formed between the first air inlet ring and the chamber body, and the first gas storage region is in communication with the first air outlet and the gas flow hole of the first air inlet ring; Or a second gas storage region is formed between the second intake ring and the chamber body, and the second gas storage region is in communication with the second air outlet and the gas flow hole of the second intake ring.

Wherein the top end of the first intake ring body extends outwardly in a radial direction thereof to form a first intake ring flange, and the top end of the second intake ring body extends outward in a radial direction thereof to form a second intake air. a ring flange; the first sub-chamber and the second sub-chamber further include a first sub-chamber upper cover member and a second sub-chamber upper cover member, the first sub-chamber upper cover assembly for the first intake A ring flange is pressed against the chamber body, and the second sub-chamber upper cover member presses the second intake ring flange against the chamber body.

Wherein a seal ring is disposed between the first intake ring body and the chamber body and between the first intake ring flange and the chamber body to keep the first gas storage region sealed And/or a sealing ring is provided between the second intake ring body and the chamber body and between the second intake ring flange and the chamber body to enable the second gas storage region Keep it closed.

In another aspect, the present invention also provides a semiconductor device comprising the process chamber of any of the above aspects.

Wherein, the semiconductor device further includes a transfer cavity and a robot, the number of fingers of the robot is the same as the number of the process sub-chambers, and the positions of the fingers are in one-to-one correspondence with the positions of the process sub-chambers, so that The wafer is simultaneously transferred between the transfer chamber and each process sub-chamber.

The present invention can achieve the following beneficial effects: The process chamber provided by the present invention, by opening at least two process sub-chambers on the chamber body, and keeping the at least two process sub-chambers in communication, so that each process sub-chamber The wafer can be processed simultaneously with the same internal process environment, thereby improving the processing capacity and process efficiency of the process chamber.

Similarly, the semiconductor device provided by the present invention can improve process efficiency and device throughput because it employs the process chamber provided by the present invention.

When the number of the process sub-chambers is two, for example, the first process sub-chamber and the second process sub-chamber having the same structure and symmetrically disposed on the chamber body, and the connection cavity is connected to the first process sub-cavity The chamber and the second process sub-chamber can simultaneously process two wafers in the first process sub-chamber and the second process sub-chamber, thereby reducing the process time by half, improving process efficiency and device throughput, and simultaneously passing through the intake structure The intake of one process sub-chamber and the second process sub-chamber can further improve the process synchronization, thereby further increasing the capacity of the device.

And, in the case where the number of the process sub-chambers is two, the first intake ring and the second intake ring are disposed above the first process sub-chamber and the second process sub-chamber, and in the chamber The body is provided with an intake passage respectively communicating with the first intake ring and the second intake ring, and the gas of the external air source can be simultaneously sent to the upper part of the first process sub-chamber and the second process sub-chamber, thereby realizing The upper air intake mode allows the process gas to directly reach the heater directly, which improves the uniformity of the process.

Further, in the case where the number of the process sub-chambers is two, the process gas is uniformly passed through the gas by arranging a plurality of gas flow holes penetrating in the radial direction on the first intake ring and the second intake ring. The flow holes are uniformly inleted from the circumferential direction of the first intake ring and the second intake ring to the first process sub-chamber and the second process sub-chamber respectively, thereby further improving the uniformity of the process intake and reducing the surface of the wafer. Differences in air pressure at different locations to increase product yield.

The technical solutions in the present invention are clearly and completely described in the following with reference to the accompanying drawings. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

The embodiment of the invention provides a process chamber, wherein at least two process sub-chambers are opened on the chamber body, and the at least two process sub-chambers are kept in communication, so that the internal process environment of each process sub-chamber is consistent. The arrangement of the at least two process sub-chambers is not limited, as long as the robot can ensure normal transfer between the process sub-chamber and the transfer cavity, for example, the following manner can be arranged: all process sub-cavities The chambers are arranged side by side in the horizontal direction; or, the entire process sub-chambers are stacked in the vertical direction; or, the entire process sub-chambers are not all arranged in the same horizontal plane, or all of them are arranged in the same vertical plane, For example, the process sub-chamber is divided into two layers in the vertical direction and two columns in the horizontal direction. The process chamber provided by the embodiment of the invention ensures the stability and consistency of the process by setting at least two process sub-chambers that are connected to each other, and improves the processing capability and the process efficiency.

The technical solution of the present invention will be described in detail below with reference to FIGS. 2 to 5b and taking a two-process sub-chamber as an example.

As shown in FIG. 2, the present invention provides a process chamber including an integrally formed chamber body 100 having a first sub-chamber 101 and a second sub-chamber 102, a first sub-chamber The chamber 101 has the same structure as the second sub-chamber 102 and is symmetrically disposed in the horizontal direction. The first sub-chamber 101 and the second sub-chamber 102 are respectively provided with a film opening 105, and the robot can transfer the wafer to the first sub-chamber 101 via the film opening 105 of the first sub-chamber 101, and via the second sub-chamber The film opening 105 of the chamber 102 is transferred to the second sub-chamber 102.

As shown in FIG. 2, the chamber body 100 is further provided with a connection chamber 103 which is connected between the first sub-chamber 101 and the second sub-chamber 102 in the horizontal direction. The chamber body 100 is fixed and positioned by the docking mounting block 107 and the docking locating pins 125 mounted thereon. The side of the chamber body 100 on which the film opening 105 is disposed is a mounting surface, and a plurality of docking mounting blocks 107 are disposed at four positions of the chamber body 100 perpendicular to the mounting surface and close to the mounting surface. And the docking positioning pin 125, specifically, the upper and lower surfaces of the chamber body 100 on the side of the film opening 105 (i.e., above and below the film opening 105) are provided with a plurality of docking mounting blocks 107, and the docking positioning pins 125 are fixed at The docking mounting block 107 is also provided; and a mating positioning pin 125 is also disposed on the outer side of the film opening 105 of the first sub-chamber and the film opening 105 of the second sub-chamber. The chamber body 100 is fixedly mounted to the transfer chamber by abutting locating pins 125.

By opening the first sub-chamber 101 and the second sub-chamber 102 which are identical in structure and symmetrically disposed on the chamber body 100, and providing the connection cavity 103 to communicate the first sub-chamber 101 and the second sub-chamber 102, The wafers are simultaneously processed in the first sub-chamber 101 and the second sub-chamber 102 having the same process environment, thereby improving the overall processing capability of the process chamber. Thus, compared with the prior art, the process chamber provided by the present invention reduces the process time for processing the same number of wafers, thereby improving process efficiency and device throughput.

Further, the process chamber further includes an intake structure that communicates with the first sub-chamber 101 and the second sub-chamber 102, respectively, and is capable of simultaneously delivering gas to the first sub-chamber 101 and the second sub-chamber 102. . The invention simultaneously injects air into the first sub-chamber and the second sub-chamber through the intake structure, which can further improve the process synchronization, thereby further increasing the capacity of the device.

As shown in FIG. 4a and FIG. 4b, the intake structure includes: an intake passage 600 located in the chamber body 100, a first intake ring 701 for conveying gas to the first sub-chamber 101, and a The second sub-chamber 102 transports a second intake ring 702 of gas, wherein the first intake ring 701 and the second intake ring 702 are disposed at upper portions of the first sub-chamber 101 and the second sub-chamber 102, respectively.

The intake passage 600 is disposed in the chamber body 100 and located between the first sub-chamber 101 and the second sub-chamber 102, for example, the first sub-chamber 101 and the second sub-chamber 102 are opposite to the intake passage 600 Symmetrical settings. The intake passage 600 includes an air inlet 119, a first air outlet 601, and a second air outlet 602. The air inlet 119 is connected to an external air source (not shown), and the first air outlet 601 and the first air inlet The ring 701 is in communication with each other, and the second air outlet 602 is in communication with the second intake ring 702.

In this embodiment, by providing an intake passage 600 between the first sub-chamber 101 and the second sub-chamber 102 on the chamber body 100, the first sub-chamber 101 and the second sub-section can be respectively from the middle to the two sides. The chamber 102 delivers gas such that the first sub-chamber 101 and the second sub-chamber 102 are capable of simultaneous intake and relatively uniform intake air.

The air inlet 119 is disposed at a lower portion of the chamber body 100, the first air outlet 601 is located on a side adjacent to the first sub-chamber 101, and the second air outlet 602 is located on a side adjacent to the second sub-chamber 102.

The projection of the intake passage 600 in a plane parallel to the above-described mounting surface may be T-shaped or Y-shaped. For ease of processing, it is preferred that the intake passage 600 be disposed in a T-shape in a plane parallel to the mounting surface.

As shown in FIG. 4a, the first intake ring 701 is disposed at the upper opening of the first sub-chamber 101, and the second intake ring 702 is disposed at the upper opening of the second sub-chamber 102, thereby achieving the first The upper air intake of the sub-chamber 101 and the second sub-chamber 102, that is, the upper air intake mode, so that the process gas can directly reach directly above the heater 300, and the reaction is uniformly generated on the surface of the wafer, thereby facilitating the improvement. Process uniformity. At the same time, the heat generated by the bulb radiation of the heater 300 can preheat the process gas to prevent the cold process gas from being directly blown onto the surface of the wafer, which is disadvantageous for the process.

The structure of the first intake ring will be described in detail below with reference to Fig. 4b.

As shown in FIG. 4b, the first intake ring 701 includes a first intake ring body 703, and the first intake ring body 703 is provided with a gas flow restricting hole 704 penetrating therethrough. A first gas storage region 800 is formed between the first intake ring 701 and the chamber body 100. More specifically, the first gas storage region 800 is formed between the outside of the first intake ring body 703 and the chamber body 100. Annular and closed gas storage area. The first gas storage region 800 is in communication with the first gas outlet 601 and the gas flow holes 704 of the first intake ring 701.

The structure and arrangement of the second intake ring 702 are the same as those of the first intake ring 701, and are not described herein again. Similarly, a second gas storage region is formed between the second intake ring 702 and the chamber body 100, and the second gas storage region and the second gas outlet 602 and the gas flow holes 704 of the second intake ring 702 are both in communication.

By providing the annular first gas storage region and the second gas storage region, gas from the inlet passage 600 can be buffered and turbed in the first gas storage region 800 and the second gas storage region, thus, when the process gas is The gas is uniformly distributed into the first sub-chamber 101 and the second sub-chamber 102 from the circumferential direction of the first intake ring 701 and the second intake ring 702 through the gas equalizing holes 704, and can be directly reached. Directly above the heater 300, uniform upper air intake is achieved, and the difference in air pressure at different positions on the wafer surface is reduced, thereby improving product yield.

As shown in FIGS. 5a and 5b, the gas flow holes 704 of the first intake ring 701 and the gas flow holes 704 of the second intake ring 702 are plural. Preferably, the plurality of gas flow holes 704 are uniformly distributed along the circumferential direction of the first intake ring 701, and the plurality of gas flow holes 704 are evenly distributed along the circumferential direction of the second intake ring 702.

By uniformly arranging the plurality of gas equalizing holes 704 on the first intake ring body 703 and the second intake ring body, the process gas passes through the gas equalizing holes 704 from the first intake ring 701 and the second intake ring 702. The circumferential direction uniformly feeds the first sub-chamber 101 and the second sub-chamber 102, respectively, further improving the uniformity of the process intake and reducing the difference in air pressure at different positions on the surface of the wafer, thereby improving the product yield. Preferably, the gas merging hole 704 is flared on the side of the first inlet ring 701 and the second inlet ring 702 adjacent to the first sub-chamber 101 and the second sub-chamber 102, specifically, such as As shown in FIG. 5b, for the gas equalization hole 704 on the first intake ring 701, its aperture toward the inner side of the first sub-chamber 101 is larger than its aperture toward the intake passage 600; for the second intake The gas equalization orifice 704 on the ring 702 has a larger diameter toward the inner side of the second subchamber 102 than it faces toward the inlet passage 600.

By setting the gas equalizing hole 704 in a flared shape on the side of the first intake ring 701 and the second intake ring 702 close to the first sub-chamber 101 and the second sub-chamber 102, the process gas can be slowed down. The flow rates in the first sub-chamber 101 and the second sub-chamber 102 prevent the process gas from being ejected, thereby allowing the process gas to enter the chamber at a constant rate.

In conjunction with Figures 4a and 4b, the top end of the first intake ring body 703 extends outwardly in a radial direction thereof to form a first intake ring flange 705, the top end of which is along the radial direction thereof. The direction extends outward to form a second intake ring flange. The first sub-chamber 101 and the second sub-chamber 102 further include a first sub-chamber upper cover member 501 and a second sub-chamber upper cover member 502, a first sub-chamber upper cover member 501 and a second sub-chamber upper cover member 502 The first intake ring flange 705 and the second intake ring flange are respectively pressed against the chamber body 100.

A first sealing ring 706 is disposed between the first intake ring body 703 and the chamber body 100, and between the first intake ring flange 705 and the chamber body 100, and the second intake ring body and the chamber A second sealing ring is disposed between the body 100 and between the second intake ring flange and the chamber body 100 to form a sealed first gas storage region 800 and a second gas storage region. The first sealing ring 706 refers to a sealing ring disposed between the first intake ring 701 and the chamber body 100; the so-called second sealing ring refers to the second intake ring 702 and the chamber body 100. The seal between the two.

Specifically, as shown in FIG. 4b, a first groove is disposed on a surface of the chamber body 100 in contact with the first intake ring flange 705, and the chamber body 100 is in contact with the first intake ring body 703. a first groove is disposed on the surface, and the first sealing ring is received in the first groove for sealing the first storage area 800 between the first intake ring 701 and the chamber body 100; correspondingly, a second groove is disposed on a surface of the chamber body 100 in contact with the second intake ring flange, and a second groove is disposed on a surface of the chamber body 100 in contact with the second intake ring body, the second seal The entrainment is placed in the second recess for sealing the second storage region between the second intake ring 702 and the chamber body 100.

The first sealing ring is disposed, and the gap between the first intake ring body 703 and the chamber body 100, the first intake ring flange 705 and the chamber body 100 may be sealed; and the second sealing ring may be disposed. Sealing the gap between the second intake ring body and the chamber body 100, between the second intake ring flange and the chamber body 100, so as to be at the first intake ring 701 and the second intake ring 702 The outer side forms an annular and sealed first gas storage region 800 and a second gas storage region, such that gas from the intake passage 600 can be buffered and leveled therein; further, through the first intake ring 701 and the second inlet The plurality of gas equalizing holes 704 on the gas ring 702 can further ensure that the process gas can uniformly enter the first sub-chamber 101 and the plurality of positions from the plurality of positions in the circumferential direction of the first sub-chamber 101 and the second sub-chamber 102 Within the two subchambers 102.

It should be noted that although the chamber body in the foregoing embodiment is integrally formed, it may not be limited in practice, and the chamber body may be assembled from a plurality of parts. Moreover, the structure of each process sub-chamber is not necessarily set to be the same, as long as the process environment of each process sub-chamber can be ensured to be the same and the process and the pick-and-place film can be smoothly performed.

It should be further noted that when the number of process sub-chambers is two or more, the structure of each process sub-chamber and the connection mode between the sub-chambers can be referred to the embodiment of the two-process sub-chamber described above. No longer.

In addition, an embodiment of the present invention further provides a semiconductor device including the above process chamber provided by the present invention.

Further, the semiconductor device further includes a transfer cavity and a robot, wherein the number of the fingers of the robot is the same as the number of the process sub-chambers, and the positions of the fingers are in one-to-one correspondence with the positions of the process sub-chambers, so as to be able to The wafer is simultaneously transferred between the transfer chamber and each process sub-chamber.

Next, the manipulator in the semiconductor device of the present invention will be described by taking a manipulator suitable for the process chamber shown in Fig. 2 as an example.

As shown in FIG. 3, the robot includes: two fingers 901, a wrist arm 902, an elbow arm 903, and a driver 904. The two fingers 901 have the same height, and can simultaneously pick up the wafer and simultaneously in the transfer chamber and the first sub-cavity. The wafer is transferred between the chambers and between the transfer chamber and the second sub-chamber. Since the two fingers 901 can simultaneously pick up or transfer wafers, process efficiency and device throughput can be improved.

It should be noted that, in practical applications, the robot used in the semiconductor device provided by the present invention may be a robot in the prior art, that is, the number of fingers may be one. In this case, in order to cooperate with each process sub-chamber simultaneously Take and place the film, but use multiple robots at the same time.

It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

100: chamber body 101: first sub-chamber 102: second sub-chamber 103: connection chamber 105: transfer port 107: docking mounting block 119: air inlet 125: docking positioning pin 300: heater 501: first Sub-chamber upper cover element 502: second sub-chamber upper cover element 600: intake passage 601: first air outlet 602: second air outlet 701: first intake ring 702: second intake ring 703: first into Air ring body 704: gas flow hole 705: first air ring flange 800: first gas storage area 901: finger 902: wrist arm 903: elbow arm 904: driver

1a is a schematic structural view of a conventional processing chamber; FIG. 1b is a cross-sectional view of a conventional processing chamber; FIG. 2 is a schematic structural view of a processing chamber according to an embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4a is a schematic diagram of an intake cross section of a process chamber according to an embodiment of the present invention; FIG. 4b is a partial enlarged view of a portion I of FIG. 4a. Figure 5a is a schematic structural view of a first intake ring according to an embodiment of the present invention; and Figure 5b is a partially enlarged view of a portion II of Figure 5a.

Claims (9)

A process chamber includes: a chamber body, wherein the chamber body is provided with at least two process sub-chambers, and the at least two process sub-chambers are kept in communication, and the at least two process sub-chambers include a a first sub-chamber and a second sub-chamber, the first sub-chamber and the second sub-chamber are identical in structure and arranged side by side in a horizontal direction, and are disposed between the two a connecting chamber; and an air intake structure, the air intake structure is respectively connected to the first sub-chamber and the second sub-chamber, and can simultaneously deliver gas to the first sub-chamber and the second sub-chamber The air intake structure includes an intake passage, a first intake ring and a second intake ring. The first intake ring is disposed at an upper portion of the first sub-chamber for the first sub-cavity The second air intake ring is disposed at an upper portion of the second sub-chamber for conveying gas to the second sub-chamber, the air intake passage is located in the chamber body, and the first sub-chamber is And the second sub-chamber is symmetrically disposed with respect to the intake passage, and the intake passage includes an air inlet, a first air outlet and a second air outlet, the air inlet is connected to an external air source, and the first air outlet and the second air outlet are respectively connected to the first air inlet ring and the second air inlet ring, The first intake ring includes a first intake ring body, the second intake ring includes a second intake ring body, and the first intake ring body and the second intake ring body are both provided along the second intake ring body The respective first gas outlets and the second gas outlets communicate with the gas inlet holes of the first inlet ring and the second inlet ring, respectively. The process chamber of claim 1, wherein the projection of the inlet passage in a plane parallel to the chamber body is T-shaped or Y-shaped, wherein the inlet is disposed in the chamber At the bottom of the body, the first air outlet is located on a side adjacent to the first sub-chamber, and the second air outlet is located on a side adjacent to the second sub-chamber. The process chamber of claim 1, wherein, corresponding to the first intake ring, the number of the gas flow holes is plural and evenly distributed along a circumferential direction of the first intake ring; The second intake ring has a plurality of gas flow holes and is evenly distributed along the circumferential direction of the second intake ring. The process chamber of claim 1, wherein the gas flow hole on the first intake ring faces the inner side of the first sub-chamber with a larger diameter than the gas on the first intake ring. a flow hole facing the aperture of the intake passage; a gas flow hole on the second intake ring facing the inner side of the second sub-chamber having a larger diameter than the gas flow-receiving hole on the second intake ring facing the intake The aperture of the channel. The process chamber of claim 1, wherein a first gas storage region is formed between the first intake ring and the chamber body, the first gas storage region and the first gas outlet, a gas distribution hole of the first intake ring is connected, and/or a second gas storage region is formed between the second intake ring and the chamber body, the second gas storage region and the second gas outlet, The gas flow holes of the second intake ring are in communication. The process chamber of claim 5, wherein the top end of the first intake ring body extends outwardly in a radial direction thereof to form a first intake ring flange, the second intake ring body a top end extending outwardly in a radial direction thereof to form a second intake ring flange; the first sub-chamber and the second sub-chamber further comprising a first sub-chamber upper cover member and a second sub-chamber a chamber upper cover member, the first sub-chamber upper cover assembly presses the first intake ring flange against the chamber body, the second sub-chamber upper cover member pressing the second intake ring flange at On the body of the chamber. The process chamber of claim 6, wherein between the first intake ring body and the chamber body and between the first intake ring flange and the chamber body a sealing ring to keep the first gas storage area sealed; and/or A seal ring is disposed between the second intake ring body and the chamber body and between the second intake ring flange and the chamber body to keep the second gas storage region sealed. A semiconductor device comprising the process chamber of any one of claims 1 to 7. The semiconductor device of claim 8, further comprising a transfer chamber and a robot, the number of fingers of the robot being the same as the number of the process sub-chambers, and the position of each finger and the process The positions of the sub-chambers are in one-to-one correspondence so that a wafer can be simultaneously transferred between the transfer chamber and the respective process sub-chambers.