TWI629737B - Method for fabricating signal testing component - Google Patents
Method for fabricating signal testing component Download PDFInfo
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- TWI629737B TWI629737B TW105138565A TW105138565A TWI629737B TW I629737 B TWI629737 B TW I629737B TW 105138565 A TW105138565 A TW 105138565A TW 105138565 A TW105138565 A TW 105138565A TW I629737 B TWI629737 B TW I629737B
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- 238000000034 method Methods 0.000 title claims abstract description 192
- 238000012360 testing method Methods 0.000 title claims description 32
- 229920000642 polymer Polymers 0.000 claims abstract description 182
- 239000002184 metal Substances 0.000 claims abstract description 114
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 claims abstract description 101
- 230000008569 process Effects 0.000 claims abstract description 95
- 238000005259 measurement Methods 0.000 claims abstract description 78
- 238000000926 separation method Methods 0.000 claims abstract description 39
- 238000005323 electroforming Methods 0.000 claims abstract description 29
- 239000000126 substance Substances 0.000 claims abstract description 10
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 384
- 238000000059 patterning Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 34
- 239000011229 interlayer Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 8
- 238000000992 sputter etching Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
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- 238000012545 processing Methods 0.000 description 4
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- 230000008054 signal transmission Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
一種訊號量測介質軟板製造方法，包括：形成一基礎層。形成複數個金屬層及複數個聚合物層於基礎層之上。於第三聚合物層及第四聚合物層間形成分離介面。於第六聚合物層及第七聚合物層間形成量測介質分離介面。於複數個金屬層上分別設置圖案層，並使用電鍍製程及電鑄製程於圖案中鍍上導電物質以形成不同用途的導電線路層。使用蝕刻震盪程序將第一聚合物層和第二聚合物層之間的金屬層分離，並將第六聚合物層和第七聚合物層由介質分離介面分開露出量測介質，藉以完成訊號量測介質軟板的製程。 A method for manufacturing a signal measurement medium flexible board includes forming a base layer. A plurality of metal layers and a plurality of polymer layers are formed on the base layer. A separation interface is formed between the third polymer layer and the fourth polymer layer. A measurement medium separation interface is formed between the sixth polymer layer and the seventh polymer layer. A pattern layer is provided on each of the plurality of metal layers, and a conductive substance is plated in the pattern using an electroplating process and an electroforming process to form conductive circuit layers for different uses. The etching vibration program is used to separate the metal layer between the first polymer layer and the second polymer layer, and the sixth polymer layer and the seventh polymer layer are separated from the dielectric separation interface to expose the measurement medium, thereby completing the signal amount. Measure the process of dielectric soft board.
Description
本發明是關於一種量測介質製造方法；且特別是關於一種量測介質軟板製造方法。 The present invention relates to a method for manufacturing a measurement medium; and in particular, to a method for manufacturing a measurement medium flexible board.
一般而言，製作完成的晶圓(wafer)會經過量測測試，以判斷半導體元件是否可正常運作。這樣的量測測試通常在晶圓被切分為各個分開的晶片和封裝之前進行。此量測測試程序可同時測試多個半導體晶片，相較於晶片封裝過後分別量測測試各個晶片，切割及封裝前的量測測試可有效降低製作成本。 Generally speaking, the finished wafer is subjected to measurement tests to determine whether the semiconductor device can operate normally. Such measurement tests are usually performed before the wafer is divided into separate wafers and packages. This measurement test program can test multiple semiconductor wafers at the same time. Compared to measuring and testing each wafer separately after chip packaging, the measurement test before cutting and packaging can effectively reduce the production cost.
現有使用於晶圓的量測測試單元或載具，大部分使用傳統機械加工製作的介質，經過特殊的處理，再將介質佈值於所需求的位置點，並從介質另一端將訊號接引至機台，達到訊號量測測試的目的。但在高頻的量測測試作業中，訊號的傳遞可能因過長的路徑、或周遭訊號的干擾，會影響整體高頻訊號作動的響應條件，因此傳統的量測測試架構無法達到高頻的量測測試需求。所以我們利用特殊的材料保護線路，整體的訊號完整避免干擾，並且大幅縮短訊號傳遞路徑，因而開發此類測試載具的應用。 Most of the existing measurement and test units or carriers used for wafers use traditional mechanical processing media. After special processing, the media is placed at the required location and the signal is connected from the other end of the media. Go to the machine to achieve the purpose of signal measurement test. However, in high-frequency measurement and test operations, the signal transmission may be caused by an excessively long path or the surrounding signal interference, which will affect the response conditions of the overall high-frequency signal operation. Therefore, the traditional measurement and test architecture cannot reach the high-frequency Measure test requirements. Therefore, we use special materials to protect the circuit, the overall signal is completely avoided from interference, and the signal transmission path is greatly shortened, so the application of such test vehicles is developed.
在晶圓量測測試中，主要是以介質卡(probe card)、針測機 (prober)與測試機(tester)對晶圓上的晶粒進行電性量測測試。介質卡是一片具有許多微細介質的平台，作為測試機與待測半導體元件的量測測試介面。針測機負責把一片片的晶圓準確地移動到介質卡的對應位置，使得介質卡上的介質接觸到晶粒所對應的接墊(pad)，再由測試機透過介質卡送出量測測試訊號，以量測半導體元件的功能、參數與特性。 In wafer measurement test, mainly use probe card, pin tester (prober) and a tester perform electrical measurement tests on the dies on the wafer. A media card is a piece of platform with many fine media, which is used as a measurement test interface between the tester and the semiconductor component to be tested. The pin tester is responsible for accurately moving the wafers to the corresponding position of the media card, so that the medium on the media card contacts the pad corresponding to the die, and the tester sends out the measurement test through the media card. Signals to measure the functions, parameters, and characteristics of semiconductor components.
由於近年來晶圓級封裝(wafer-level package)、高頻電路及三維堆積電路(3D IC)的應用迅速成長，使得高頻的晶圓量測測試(wafer probing/chip probing)需求增加。現有之使用於晶圓節省製程時間的量測測試單元或載具，大部分是使用傳統機械加工製作的介質。其經過特殊的處理，再將介質佈值於所需求的位置點，並從介質另一端將訊號接引至機台，達到訊號量測測試的目的。但在高頻的量測測試作業中，訊號的傳遞可能因過長的路徑、或周遭訊號的干擾，會影響整體高頻訊號作動的響應條件，因此傳統的測試架構在高頻量測測試需求下，仍有很大的改進空間，如保護線路，使得整體的訊號完整避免干擾，以及大幅縮短訊號傳遞路徑。 Due to the rapid growth of wafer-level packages, high-frequency circuits, and three-dimensional stacked circuits (3D ICs), the demand for high-frequency wafer probing / chip probing has increased in recent years. Most of the existing measurement and test units or carriers used in wafers to save process time are made of traditional mechanical processing media. After special processing, the medium is distributed to the required position, and the signal is connected to the machine from the other end of the medium to achieve the purpose of signal measurement and test. However, in high-frequency measurement and test operations, the transmission of signals may be caused by long paths or interference from surrounding signals, which will affect the response conditions of the overall high-frequency signal operation. Therefore, the traditional test architecture requires high-frequency measurement and test requirements. There is still a lot of room for improvement, such as protecting the line, making the overall signal completely avoid interference, and greatly shortening the signal transmission path.
因此，本發明的主要目的是在於提供一種量測介質的製作方法，其可同時製作出一整片具有量測介質的軟板，並且該些量測介質的軟板可用於進行高頻的晶圓量測測試。 Therefore, the main object of the present invention is to provide a method for manufacturing a measurement medium, which can simultaneously produce a whole flexible board with a measurement medium, and the flexible board of the measurement medium can be used for high-frequency crystals. Circle measurement test.
為達此一目的，本發明提供之量測介質的軟板製造方法包括形成基底層、金屬分離層及第一聚合物層，金屬分離層覆蓋於基底層之上，第一聚合物層覆蓋於金屬分離層之上，基底層、金屬分離層及第一聚合物層形成基礎層；形成第一金屬層，覆蓋於基礎層之上，並形成第二聚 合物層，覆蓋於第一金屬層之上；形成第二金屬層於第二聚合物層之上，並執行第一圖案化程序以形成導電層；形成第三聚合物層於導電層之上；形成第四聚合物層於第三聚合物層之上並形成分離介面；執行第二圖案化程序，將載板電信介面(Interface)相對位置圖形，以離子蝕刻穿透第三聚合物層及第四聚合物層顯示於部分裸露的該導電層之上，並執行電鑄製程，將已蝕刻位置進行電鑄程序於部分裸露的導電層上以形成導電凸塊部份；形成第三金屬層於第四聚合物層之上及導電凸塊部分之上，執行第三圖案化程序於第三金屬層之上以形成接地圖案，並執行電鍍製程，將接地圖案鍍上金屬以形成接地層；形成第五聚合物層於接地層、導電凸塊部分及第四聚合物層之上，以形成橋階層厚度；執行第四圖案化程序於第五聚合物之上以形成橋接圖案，並以離子蝕刻成形後並執行電鑄製程，將橋接圖案鍍上橋階層；執行第四圖案化程序於第五聚合物之上以形成橋接圖案，並執行電鑄製程，將橋接層鍍在橋接圖案內；形成第四金屬層於橋接層及第五聚合物層之上，執行第五圖案化程序於第四金屬層之上以形成線路圖，並執行電鍍製程，將線路圖案鍍上導電物質以形成線路層；形成第六聚合物層於線路層及第五聚合物層之上，以形成介質厚度；形成第七聚合物層於第六聚合物層之上以形成介質分離介面；形成第五金屬層於第七聚合物層之上，執行第六圖案化程序於第五金屬層之上以形成晶圓測試墊介質圖案，並執行電鑄製程，將金屬沉積至第七聚合物層執行第七圖案畫程序，並以離子蝕刻成行完成訊號量測介質軟板外型之圖像，最後執行蝕刻震盪程序，使得第一聚合物層及第二聚合物層彼此分開，並使得第三、四聚合物層及第六、七聚合物層彼此分開，以完成訊號量測介質軟板。 To achieve this, the method for manufacturing a flexible board for measuring a medium provided by the present invention includes forming a base layer, a metal separation layer, and a first polymer layer. The metal separation layer covers the base layer, and the first polymer layer covers the Above the metal separation layer, the base layer, the metal separation layer, and the first polymer layer form a base layer; a first metal layer is formed, covers the base layer, and forms a second polymer layer. A composite layer covering the first metal layer; forming a second metal layer on the second polymer layer and performing a first patterning process to form a conductive layer; forming a third polymer layer on the conductive layer ; Forming a fourth polymer layer on the third polymer layer and forming a separation interface; executing the second patterning procedure, patterning the relative position of the carrier telecommunication interface (Interface), and ion-etching through the third polymer layer and The fourth polymer layer is displayed on the partially exposed conductive layer, and an electroforming process is performed. The etched position is electroformed on the partially exposed conductive layer to form a conductive bump portion; a third metal layer is formed On the fourth polymer layer and the conductive bump portion, a third patterning process is performed on the third metal layer to form a ground pattern, and a plating process is performed to plate the ground pattern with metal to form a ground layer; A fifth polymer layer is formed on the ground layer, the conductive bump portion and the fourth polymer layer to form a bridge layer thickness; a fourth patterning process is performed on the fifth polymer to form a bridge pattern, and After the etching and forming, an electroforming process is performed to plate the bridge pattern on the bridge layer; a fourth patterning process is performed on the fifth polymer to form a bridge pattern; and an electroforming process is performed to plate the bridge layer in the bridge pattern; A fourth metal layer is formed on the bridge layer and the fifth polymer layer, a fifth patterning process is performed on the fourth metal layer to form a circuit pattern, and a plating process is performed to plate the circuit pattern with a conductive substance to form a circuit Forming a sixth polymer layer on the circuit layer and the fifth polymer layer to form a dielectric thickness; forming a seventh polymer layer on the sixth polymer layer to form a dielectric separation interface; forming a fifth metal layer On the seventh polymer layer, a sixth patterning process is performed on the fifth metal layer to form a wafer test pad dielectric pattern, and an electroforming process is performed to deposit metal onto the seventh polymer layer to perform the seventh pattern. Draw a program, and use ion etching to form a line to complete the signal measurement of the image of the dielectric soft board. Finally, perform the etching and shaking process to separate the first polymer layer and the second polymer layer from each other, and make the first The third and fourth polymer layers and the sixth and seventh polymer layers are separated from each other to complete a signal measurement medium flexible board.
為使本發明之上述目的、特徵和優點能更明顯易懂，下文特舉較佳實施例並配合所附圖式做詳細說明。 In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, preferred embodiments are described in detail below in conjunction with the accompanying drawings.
100‧‧‧基礎層 100‧‧‧ foundation layer
110‧‧‧基底層 110‧‧‧ basal layer
120‧‧‧金屬介層 120‧‧‧Metal interlayer
130‧‧‧第一聚合物層 130‧‧‧first polymer layer
140‧‧‧金屬分離層 140‧‧‧metal separation layer
150‧‧‧第二聚合物層 150‧‧‧ second polymer layer
160‧‧‧第二金屬層 160‧‧‧Second metal layer
160’‧‧‧導電層 160’‧‧‧ conductive layer
1602’‧‧‧部分裸露載板電信介面的導電層 1602’‧‧‧ Partially exposed conductive layer of the carrier board telecommunication interface
1606’‧‧‧橋接圖案 1606’‧‧‧bridge pattern
170‧‧‧第三聚合物層 170‧‧‧ third polymer layer
180‧‧‧第四聚合物層 180‧‧‧ fourth polymer layer
190‧‧‧導電凸塊 190‧‧‧Conductive bump
200‧‧‧第三金屬層 200‧‧‧ third metal layer
210‧‧‧接地層 210‧‧‧ ground plane
220‧‧‧第五聚合物層 220‧‧‧ fifth polymer layer
230‧‧‧橋接層 230‧‧‧bridge layer
240‧‧‧第四金屬層 240‧‧‧ fourth metal layer
250‧‧‧線路層 250‧‧‧ Line layer
260‧‧‧第六聚合物層 260‧‧‧Sixth polymer layer
280‧‧‧第七聚合物層 280‧‧‧Seventh polymer layer
310‧‧‧量測介質 310‧‧‧Measurement medium
330‧‧‧量測介質 330‧‧‧Measurement medium
400‧‧‧介質軟板裝置 400‧‧‧ medium flexible board device
410‧‧‧載板電信介面 410‧‧‧ Carrier Board Telecom Interface
420‧‧‧金屬線 420‧‧‧metal wire
500‧‧‧介質軟板裝置 500‧‧‧ medium flexible board device
I2‧‧‧分離介面 I2‧‧‧ separation interface
I3‧‧‧介質分離介面 I3‧‧‧Media separation interface
S1~S14‧‧‧主要步驟 S1 ~ S14‧‧‧ Main steps
A‧‧‧步驟分頁連接處記號 A‧‧‧Step paging connection mark
S’11、S21、S31、S311、S312、S313、S41、S51、S61、S611、S612、S613、S62、S71、S711、S712、S713、S72、S81、S91、S911、S912、S92、S101、S102、S111、S121、S131、S1311、S1312、S1313、S132、 S141、S142、S143‧‧‧子集步驟 S'11, S21, S31, S311, S312, S313, S41, S51, S61, S611, S612, S613, S62, S71, S711, S712, S713, S72, S81, S91, S911, S912, S92, S101, S102, S111, S121, S131, S1311, S1312, S1313, S132, S141, S142, S143‧‧‧ Subset steps
圖1A是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1A is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention.
圖1B是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1B is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention.
圖1C是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1C is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention.
圖1D是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1D is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention.
圖1E是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1E is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention.
圖1F是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1F is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention.
圖1G是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1G is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention.
圖1H是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1H is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention.
圖1I是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1I is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention.
圖1J是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1J is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention.
圖1K是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1K is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention.
圖1L是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1L is a side cross-sectional view of a step of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖1M是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1M is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention.
圖1N是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1N is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention.
圖1O是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 10 is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention.
圖1P是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1P is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention.
圖1Q是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1Q is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention.
圖1R是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1R is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention.
圖1S是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1S is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention.
圖1T是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。 FIG. 1T is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention.
圖2A是根據本發明的一實施例之量測介質軟板製造方法所製造出的量測介質軟板量測介質軟板裝置之上視圖。 FIG. 2A is a top view of a measuring medium flexible plate measuring medium flexible plate device manufactured by a measuring medium flexible plate manufacturing method according to an embodiment of the present invention.
圖2B是根據本發明的一實施例之量測介質軟板製造方法所製造出的量測介質軟板的量測介質軟板裝置之上視圖。 2B is a top view of a measuring medium flexible plate device for measuring a medium flexible plate manufactured by a measuring medium flexible plate manufacturing method according to an embodiment of the present invention.
圖2C是根據本發明的一實施例之量測介質軟板製造方法所製造出的量測介質軟板的量測介質軟板裝置之上視圖。 FIG. 2C is a top view of a measuring medium flexible plate device for measuring a medium flexible plate manufactured by a measuring medium flexible plate manufacturing method according to an embodiment of the present invention.
圖3A是根據本發明的一實施例之量測介質軟板製造方法的主要流程圖。 FIG. 3A is a main flowchart of a manufacturing method of a measurement medium flexible board according to an embodiment of the present invention.
圖3B是根據本發明的一實施例之量測介質軟板製造方法的主要流程圖。 FIG. 3B is a main flowchart of a manufacturing method of a measurement medium flexible board according to an embodiment of the present invention.
圖4是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 4 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖5是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 5 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖6是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 FIG. 6 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖7是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 FIG. 7 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖8是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 FIG. 8 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖9是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 9 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖10是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 FIG. 10 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖11是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 11 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖12是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 12 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖13是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 13 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖14是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 14 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖15是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 15 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖16是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 FIG. 16 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
圖17是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。 FIG. 17 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention.
茲配合圖式說明本發明之較佳實施例。 The preferred embodiments of the present invention will be described with reference to the drawings.
本發明的一實施例揭露了一種量測介質軟板的製造方法。 An embodiment of the invention discloses a method for manufacturing a flexible medium for measuring a medium.
請參考圖1A、圖3A及圖4。圖1A是根據本發明之一量測介質軟板製造方法的一步驟之側剖面圖。圖3A是根據本發明的一實施例之量測介質軟板製造方法的主要流程圖。圖4是根據本發明的一實施例之量測介 質軟板製造方法的子集流程圖。在本實施例中，可形成基底層110、金屬介層120及第一聚合物層130。金屬介層120覆蓋於基底層110之上；第一聚合物層130覆蓋於金屬介層120之上，但並不以此為限。基底層110、金屬介層120及第一聚合物層130共同形成基礎層100(S1)。 Please refer to FIG. 1A, FIG. 3A and FIG. 4. FIG. 1A is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to the present invention. FIG. 3A is a main flowchart of a manufacturing method of a measurement medium flexible board according to an embodiment of the present invention. FIG. 4 is a measurement medium according to an embodiment of the present invention A flowchart of a subset of the method for manufacturing soft boards. In this embodiment, a base layer 110, a metal interlayer 120, and a first polymer layer 130 may be formed. The metal interlayer 120 covers the base layer 110; the first polymer layer 130 covers the metal interlayer 120, but is not limited thereto. The base layer 110, the metal interlayer 120, and the first polymer layer 130 together form a base layer 100 (S1).
在本實施例中，基底層110可以是玻璃基板，金屬介層120可以是金屬材質，例如是鉻(Cr)。其中金屬介層120置於基板110上的方式可以是用沈積的方式，例如是金屬熱蒸鍍(thermal evaporation)、物理氣相沉積(Physical Vapor Deposition)或是電子槍蒸鍍(electron gun evaporation)，但不以此為限。此外，金屬介層120(在本實施例中以鉻(Cr)金屬為例)是用以讓基底層110及第一聚合物層130更易於結合之一黏著層(adhesive layer)，以避免聚合物層與玻璃基板接著不佳的情況，導致聚合物自玻璃基板上產生剝離。 In this embodiment, the base layer 110 may be a glass substrate, and the metal interlayer 120 may be a metal material, such as chromium (Cr). The method for placing the metal interlayer 120 on the substrate 110 may be a deposition method, such as metal thermal evaporation, physical vapor deposition, or electron gun evaporation. But not limited to this. In addition, the metal interlayer 120 (in this embodiment, a chromium (Cr) metal is used as an example) is an adhesive layer used to make it easier for the base layer 110 and the first polymer layer 130 to combine to avoid polymerization. Poor adhesion of the physical layer to the glass substrate may cause the polymer to peel from the glass substrate.
在本實施例中，第一聚合物層130可以是化學性質穩定的非導體聚合物，例如是聚醯亞胺(Polyimide,PI)，但不以此為限。第一聚合物層130可以是塗佈(spin coating)於金屬介層120之上，使得第一聚合物層130可以盡量的貼近且平鋪於金屬介層120/基底層110。 In this embodiment, the first polymer layer 130 may be a chemically stable non-conductive polymer, such as polyimide (PI), but is not limited thereto. The first polymer layer 130 may be spin-coated on the metal interlayer 120, so that the first polymer layer 130 can be as close as possible to the metal interlayer 120 / the base layer 110.
其中，形成該基礎層100更包括一加熱步驟(S’11)。加熱步驟(S’11)可以是將基礎層100放置於烤箱進行升溫。此升溫(烘烤)步驟可使得第一聚合物層130(在本實施例中已聚醯亞胺polymide,PI為例)進行鏈結。第一聚合物層130的鏈結是指第一聚合物層130經過高溫之後，材料分子的重新組合變化，一般為相態的變化。本實施例中為液態轉固態的相態變化。 Wherein, forming the base layer 100 further includes a heating step (S'11). In the heating step (S'11), the base layer 100 may be placed in an oven to increase the temperature. This step of heating (baking) can cause the first polymer layer 130 (in this embodiment, polyimide has been polymide, PI for example) to be linked. The linking of the first polymer layer 130 refers to the recombination and change of material molecules after the first polymer layer 130 is subjected to high temperature, and generally the change of the phase state. In this embodiment, the phase state changes from liquid to solid.
請參考圖1B、圖3A及圖5。圖1B是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖5是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在一些實施例中，請參照圖1B，金屬分離層140形成並覆蓋於基礎層100之上，再來，第二聚合物層150形成並覆蓋於金屬分離層140之上(S2)。金屬分離層140可以是鎢金屬(tungsten,W)，且可以是用濺鍍的方式形成於基礎層100之上，但不以此為限。第二聚合物層150可以是聚醯亞胺，且可以是以塗佈的方式形成於金屬分離層140之上，但不以此為限。 Please refer to FIG. 1B, FIG. 3A and FIG. 5. FIG. 1B is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention. 5 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In some embodiments, please refer to FIG. 1B, the metal separation layer 140 is formed and covered on the base layer 100, and then, the second polymer layer 150 is formed and covered on the metal separation layer 140 (S2). The metal separation layer 140 may be tungsten metal (tungsten, W), and may be formed on the base layer 100 by sputtering, but is not limited thereto. The second polymer layer 150 may be polyimide, and may be formed on the metal separation layer 140 in a coating manner, but is not limited thereto.
其中，在形成金屬分離層140於基礎層100之上，且形成第二聚合物層150於金屬分離層140之上後，更包括一加熱步驟(S21)。加熱步驟S21可以是將第二聚合物層150/金屬分離層140/基礎層100放置於烤箱進行升溫。此升溫(烘烤)步驟可使得第二聚合物層150進行鏈結。藉此，金屬分離層140可作為後續步驟中金屬分離層140與第二聚合物層150分離時之分隔層，因此稱作金屬分離層。 Wherein, after forming the metal separation layer 140 on the base layer 100 and forming the second polymer layer 150 on the metal separation layer 140, a heating step is further included (S21). In the heating step S21, the second polymer layer 150 / metal separation layer 140 / base layer 100 may be placed in an oven for heating. This step of heating (baking) may cause the second polymer layer 150 to be linked. Thereby, the metal separation layer 140 can be used as a separation layer when the metal separation layer 140 is separated from the second polymer layer 150 in the subsequent steps, and thus is referred to as a metal separation layer.
請參考圖1C、圖1D、圖3A及圖6。圖1C是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖1D是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖6是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第二金屬層160於第二聚合物層150之上，並執行第一圖案化程序(S31)以形成導電層160'(S3)。其中，第二金屬層160可以是多層金屬層。在本實施例中，例如是鎢(W)/銅(Cu)/鎢(W)，如此之三層金屬結構。三層金屬的厚度範圍分別是100nm至500nm不等，但不以此為限。除此之外， 第二金屬層160可以是用濺鍍的方式形成於第二聚合物層150之上。 Please refer to FIG. 1C, FIG. 1D, FIG. 3A and FIG. 6. FIG. 1C is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention. FIG. 1D is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention. FIG. 6 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a second metal layer 160 can be formed on the second polymer layer 150, and a first patterning process (S31) is performed to form a conductive layer 160 '(S3). The second metal layer 160 may be a multilayer metal layer. In this embodiment, it is, for example, tungsten (W) / copper (Cu) / tungsten (W), such a three-layer metal structure. The thickness of the three layers of metal ranges from 100nm to 500nm, but is not limited to this. In addition, The second metal layer 160 may be formed on the second polymer layer 150 by sputtering.
承上，第一圖案化程序(S31)包括形成感光層(圖未示)於第二金屬層160之上(S311)。接著進行照光程序(S312)以形成反應圖案(圖未示)。然後進行去除程序(S313)以形成導電層160'。 The first patterning process (S31) includes forming a photosensitive layer (not shown) on the second metal layer 160 (S311). Then, a light irradiation process (S312) is performed to form a reaction pattern (not shown). A removal process (S313) is then performed to form a conductive layer 160 '.
其中，感光層可以是一種光阻材料，像是正光阻(例如是酚醛樹脂)或負光阻(例如是聚異戊二烯，polyisoprene)。正光阻是指曝光的部分會溶解於顯影劑；負光阻是指未曝光的部分會溶解於顯影劑。 The photosensitive layer may be a photoresist material, such as a positive photoresist (for example, a phenolic resin) or a negative photoresist (for example, polyisoprene). Positive photoresist means that the exposed part will dissolve in the developer; negative photoresist means that the unexposed part will dissolve in the developer.
照光程序(S312)例如是使用短波長的紫外光以一指定的秒數曝照在感光層上(俗稱“曝光”)，使得感光層162產生一分子鍵結的化學變化。例如，在使用正光阻時，曝光會使得正光阻產生極性的變化(例如是斷鍵)；而在使用負光阻時，曝光會使得負光阻中的分子產生交連的變化。此外，反應圖案可以是預先設計在光罩(Photo Mask)上的電路圖案。 The irradiation procedure (S312) uses, for example, short-wavelength ultraviolet light to expose the photosensitive layer (commonly known as "exposure") for a specified number of seconds, so that the photosensitive layer 162 produces a chemical change in molecular bonding. For example, when a positive photoresist is used, exposure will cause the polarity of the positive photoresist to change (such as a broken bond); while when a negative photoresist is used, exposure will cause changes in the molecules in the negative photoresist to crosslink. In addition, the reaction pattern may be a circuit pattern previously designed on a photo mask.
請參考圖1E、圖3A及圖7。圖1E是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖7是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。接著，於本實施例中，形成第三聚合物層170於導電層160'之上(S4)。第三聚合物層170可以是聚醯亞胺且可以是以塗佈的方式形成於導電層160'之上。其中形成第三聚合物層170於導電層160'之上更包括一加熱步驟(S41)。加熱步驟(S41)可以是在第三聚合物層170形成於導電層160'之後進行烤箱升溫。加熱步驟(S41)是可產生後續步驟中用以連接外部的導電凸塊之高度的步驟。此升溫(烘烤)步驟可使得第三聚合物層170進行鏈結。 Please refer to FIG. 1E, FIG. 3A and FIG. 7. FIG. 1E is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention. FIG. 7 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. Next, in this embodiment, a third polymer layer 170 is formed on the conductive layer 160 '(S4). The third polymer layer 170 may be polyimide and may be formed on the conductive layer 160 'in a coating manner. Forming the third polymer layer 170 on the conductive layer 160 'further includes a heating step (S41). The heating step (S41) may be performed after the third polymer layer 170 is formed on the conductive layer 160 '. The heating step (S41) is a step that can generate the height of the subsequent conductive bumps to be connected in the subsequent steps. This heating (baking) step may cause the third polymer layer 170 to be chained.
請參考圖1F、圖3A及圖8。圖1F是根據本發明的一實施例之 量測介質軟板製造方法的一步驟之側剖面圖。圖8是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第四聚合物層180於第三聚合物層170之上並形成分離介面I1(S5)。第四聚合物層180可以是聚醯亞胺，但不以此為限。第四聚合物層180可以是以塗佈的方式形成於第三聚合物層170之上。其中，形成第四聚合物層180於第三聚合物層170之上(S5)更包括低溫加熱步驟(S51)。低溫加熱步驟(S51)可以是在第四聚合物層180形成於第三聚合物層170之上後進行烤箱升溫。此相較於一般加熱步驟較為低溫的升溫(烘烤)步驟可使得第四聚合物層180進行程度較弱的鏈結，並形成後續步驟中上述的凸塊分開用之分離介面I1。 Please refer to FIG. 1F, FIG. 3A and FIG. 8. FIG. 1F is a diagram illustrating an embodiment according to the present invention. A side cross-sectional view of a step of a method for manufacturing a dielectric flexible board. FIG. 8 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a fourth polymer layer 180 may be formed on the third polymer layer 170 and a separation interface I1 may be formed (S5). The fourth polymer layer 180 may be polyimide, but is not limited thereto. The fourth polymer layer 180 may be formed on the third polymer layer 170 in a coating manner. Wherein, forming the fourth polymer layer 180 on the third polymer layer 170 (S5) further includes a low-temperature heating step (S51). The low-temperature heating step (S51) may be performed after the fourth polymer layer 180 is formed on the third polymer layer 170 and then the temperature of the oven is increased. Compared with the general heating step, the lower temperature heating (baking) step can cause the fourth polymer layer 180 to perform weaker linking, and form the separation interface I1 for separating the bumps in the subsequent steps.
請參考圖1G、圖1H、圖3A及圖9。圖1G是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖1H是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖9是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可執行第二圖案化程序(S61)，將印刷電路圖案(圖未示)離子蝕刻於第三聚合物層170及第四聚合物層180，顯示於一部分裸露的導電層1602‘之上，並執行電鑄製程(S62)，將印刷電路圖案電鑄於部分裸露的導電層上1602'以形成導電凸塊部份190(S6)。 Please refer to FIG. 1G, FIG. 1H, FIG. 3A and FIG. FIG. 1G is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention. FIG. 1H is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention. 9 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a second patterning process (S61) may be performed, and a printed circuit pattern (not shown) is ion-etched on the third polymer layer 170 and the fourth polymer layer 180, and displayed on a part of the exposed conductive layer. 1602 ', and an electroforming process is performed (S62), and a printed circuit pattern is electroformed on a part of the exposed conductive layer 1602' to form a conductive bump portion 190 (S6).
其中第二圖案化程序(S61)包括形成感光層(圖未示)於第四聚合物層180之上(S611)；使用離子蝕刻方式形成載板電信介面圖案(S612)；進行一去除程序(S613)，將第四聚合物層180及第三聚合物層170部分去除至去除部分下方之導電層160‘裸露以形成該印刷電路圖案的圖 樣。進行去除程序(S613)，將第四聚合物層180及第三聚合物層170部分去除至去除部分下方之導電層160‘裸露以形成印刷電路圖案的圖樣。其中，去除程序(S613)可以是使用乾式蝕刻來完成。部分去除第四聚合物層180及第三聚合物層170可以是去除掉上述的反應圖案至去除部分下方之導電層160'裸露，但不以此為限。反應圖案可以是預先用電腦繪圖軟體繪製並製作成軟式或硬式的光遮罩(photomask)而成。 The second patterning process (S61) includes forming a photosensitive layer (not shown) on the fourth polymer layer 180 (S611); using ion etching to form a carrier board telecommunication interface pattern (S612); and performing a removal process ( S613). The fourth polymer layer 180 and the third polymer layer 170 are partially removed to expose the conductive layer 160 'under the removed portion to form the printed circuit pattern. kind. A removal process is performed (S613), and the fourth polymer layer 180 and the third polymer layer 170 are partially removed to the conductive layer 160 'exposed under the removed portion to form a printed circuit pattern. The removal process (S613) may be performed by using dry etching. The partial removal of the fourth polymer layer 180 and the third polymer layer 170 can be achieved by removing the above-mentioned reaction pattern to the exposed conductive layer 160 'under the removed portion, but it is not limited thereto. The reaction pattern may be drawn in advance with a computer drawing software and made into a soft or hard photomask.
更詳細地，其中電鑄製程(S62)更包括在部分裸露的導電層(1602')之上將導電凸塊部分190電鑄至一預設高度。在本實施例中，預設高度與形成於導電層160'之上的第三聚合物層170的高度h1及第四聚合物層180的高度h2的總和相同，但在其他實施例中並不以此為限。 In more detail, the electroforming process (S62) further includes electroforming the conductive bump portion 190 to a predetermined height on the partially exposed conductive layer (1602 '). In this embodiment, the preset height is the same as the sum of the height h1 of the third polymer layer 170 and the height h2 of the fourth polymer layer 180 formed on the conductive layer 160 ', but it is not the same in other embodiments. This is the limit.
請參考圖1I、圖1J、圖3A及圖10。圖1I是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖1J是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖10是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第三金屬層200於第四聚合物層180之上及導電凸塊190部分之上。執行第三圖案化程序(S71)於第三金屬層200之上以形成接地圖案(圖未示)，並執行電鍍製程(S72)，將接地圖案鍍上導電物質以形成接地層210(S7)。其中，第三金屬層200可以是一多層金屬，例如是鎢(tungsten,W)和銅(copper,Cu)組合而成的多層金屬。 Please refer to FIG. 1I, FIG. 1J, FIG. 3A and FIG. 10. FIG. 1I is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention. FIG. 1J is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention. FIG. 10 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a third metal layer 200 may be formed on the fourth polymer layer 180 and on the conductive bump 190 portion. A third patterning process (S71) is performed on the third metal layer 200 to form a ground pattern (not shown), and a plating process (S72) is performed. The ground pattern is plated with a conductive substance to form a ground layer 210 (S7) . The third metal layer 200 may be a multilayer metal, for example, a multilayer metal composed of tungsten (Wungsten, W) and copper (Cupper, Cu).
承上，第三圖案化程序(S71)包括形成一感光層(圖未示)於第三金屬層200之上(S711)；進行照光程序(S712)以形成接地反應圖案(圖未示)；以及使用離子蝕刻及蝕刻液搭配進行蝕刻金屬(S713)，將第 三金屬層200部分去除。 Continuing, the third patterning process (S71) includes forming a photosensitive layer (not shown) on the third metal layer 200 (S711); performing a light irradiation process (S712) to form a ground reaction pattern (not shown); And using ion etching and etching solution to etch metal (S713), The three metal layer 200 is partially removed.
更詳細地，電鍍製程(S72)更包括在接地圖案之上電鍍接地層210至一設定高度，如圖1I所示，其為本發明的一實施例電鍍製程後的側視剖面圖，但不以此為限。 In more detail, the electroplating process (S72) further includes electroplating the ground layer 210 to a set height on the ground pattern, as shown in FIG. 1I, which is a side cross-sectional view after the electroplating process according to an embodiment of the present invention. This is the limit.
請參考圖1K、圖3A及圖11。圖1K是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖11是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第五聚合物層220於接地層210、導電凸塊190部分及第四聚合物層180之上，用以形成橋階層厚度(S8)。其中，形成第五聚合物層220於接地層210、導電凸塊190部分及第四聚合物層180之上更包括加熱步驟(S81)。更詳細地，加熱步驟(S81)可以是在五聚合物層220形成於接地層210及第三金屬層200之後進行烤箱升溫。加熱步驟(S81)是可產生及確認後續步驟中用以橋接的橋接層厚度的步驟。此升溫(烘烤)步驟可使得第五聚合物層220進行鏈結。 Please refer to FIG. 1K, FIG. 3A and FIG. 11. FIG. 1K is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring media according to an embodiment of the present invention. 11 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a fifth polymer layer 220 may be formed on the ground layer 210, the conductive bump 190 portion, and the fourth polymer layer 180 to form a bridge layer thickness (S8). Wherein, forming the fifth polymer layer 220 on the ground layer 210, the conductive bump 190 and the fourth polymer layer 180 further includes a heating step (S81). In more detail, the heating step (S81) may be performed after the five-polymer layer 220 is formed on the ground layer 210 and the third metal layer 200 by heating the oven. The heating step (S81) is a step for generating and confirming the thickness of the bridge layer for bridging in the subsequent steps. This heating (baking) step may cause the fifth polymer layer 220 to be linked.
請參考圖1L、圖1M、圖3A及圖12。圖1L是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖1L是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖1M是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖12是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可執行第四圖案化程序(S91)於第五聚合物220之上以形成橋接圖案(1606’)，並執行電鑄製程(S92)，將橋接層230鍍在橋接圖案1606’內(S9)。其中，第四圖案化程序(S91)包括形成感光層(圖未示)於橋接層230及第五聚合物層220之上(S911)；使用離子蝕刻方式形成橋接圖案(S912)。更詳 細地，電鑄製程(S92)更包括將橋接層230電鑄在橋接圖案1606‘內。在本實施例中，橋接層230的高度與第五聚合物層220的高度相同，但不以此為限。在其他實施例中，橋接層230的高度亦可依據使用者的需求進行調整或客製化。 Please refer to FIG. 1L, FIG. 1M, FIG. 3A and FIG. FIG. 1L is a side cross-sectional view of a step of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. FIG. 1L is a side cross-sectional view of a step of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. FIG. 1M is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention. 12 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a fourth patterning process (S91) can be performed on the fifth polymer 220 to form a bridge pattern (1606 '), and an electroforming process (S92) is performed to plate the bridge layer 230 on the bridge pattern 1606 '(S9). The fourth patterning process (S91) includes forming a photosensitive layer (not shown) on the bridge layer 230 and the fifth polymer layer 220 (S911); and forming a bridge pattern using an ion etching method (S912). More detailed Specifically, the electroforming process (S92) further includes electroforming the bridge layer 230 into the bridge pattern 1606 ′. In this embodiment, the height of the bridge layer 230 is the same as the height of the fifth polymer layer 220, but it is not limited thereto. In other embodiments, the height of the bridge layer 230 can also be adjusted or customized according to user needs.
接著，請參考圖1N、圖1O、圖3B及圖13。圖1N是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖1O是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖3B是根據本發明的一實施例之量測介質軟板製造方法的主要流程圖。圖13是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第四金屬層240於橋接層230及第五聚合物層220之上，執行第五圖案化程序(S101)於第四金屬層240之上以形成線路圖案(圖未示)，並執行電鍍製程(S102)，將線路圖案(圖未示)鍍上導電物質以形成線路層250(S10)。 Please refer to FIG. 1N, FIG. 10, FIG. 3B and FIG. 13. FIG. 1N is a side cross-sectional view of a step of a method for manufacturing a flexible medium for measuring medium according to an embodiment of the present invention. FIG. 10 is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention. FIG. 3B is a main flowchart of a manufacturing method of a measurement medium flexible board according to an embodiment of the present invention. 13 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a fourth metal layer 240 can be formed on the bridge layer 230 and the fifth polymer layer 220, and a fifth patterning process (S101) is performed on the fourth metal layer 240 to form a circuit pattern (FIG. (Not shown), and a plating process is performed (S102), and a circuit pattern (not shown) is plated with a conductive substance to form a circuit layer 250 (S10).
其中，第四金屬層240類似於第三金屬層200；第五圖案畫程序(S101)類似於第三圖案化程序(S71)；電鍍製程102類似於電鍍製程72，故在此不再贅述。 The fourth metal layer 240 is similar to the third metal layer 200; the fifth pattern drawing process (S101) is similar to the third patterning process (S71); the electroplating process 102 is similar to the electroplating process 72, so it will not be described again here.
請參考圖1P、圖3B及圖14。圖1P是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖14是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第六聚合物層260於線路層250及第五聚合物220之上以預先形成並決定後續步驟中製作介質的厚度(S11)。其中，形成第六聚合物層260於線路層250及第五聚合物220之上更包括加熱步驟(S111)。更詳細地，加熱步驟(S111) 可以是在形成第六聚合物層260於線路層250及第四金屬層240之上之後進行烤箱升溫。加熱步驟(S111)亦是可產生及確認後續步驟中介質厚度的步驟。此升溫(烘烤)步驟可使得第六聚合物層260進行鏈結。 Please refer to FIG. 1P, FIG. 3B and FIG. 14. FIG. 1P is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible plate according to an embodiment of the present invention. 14 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a sixth polymer layer 260 may be formed on the circuit layer 250 and the fifth polymer 220 to form in advance and determine the thickness of the manufacturing medium in the subsequent steps (S11). Wherein, forming the sixth polymer layer 260 on the circuit layer 250 and the fifth polymer 220 further includes a heating step (S111). In more detail, the heating step (S111) After the sixth polymer layer 260 is formed on the circuit layer 250 and the fourth metal layer 240, the temperature of the oven may be increased. The heating step (S111) is also a step for generating and confirming the thickness of the medium in the subsequent steps. This heating (baking) step may cause the sixth polymer layer 260 to be linked.
請參考圖1Q、圖3B及圖15。圖1Q是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖15是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第七聚合物層280於第六聚合物層260之上以形成介質分離介面I2(S12)。其中，形成第七聚合物層280於第六聚合物層260之上更包括執行低溫加熱步驟(S121)。低溫加熱步驟(S121)與前述之加熱步驟(S51)雷同，在此不再贅述。 Please refer to FIG. 1Q, FIG. 3B and FIG. 15. FIG. 1Q is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention. 15 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a seventh polymer layer 280 may be formed on the sixth polymer layer 260 to form a dielectric separation interface I2 (S12). Among them, forming the seventh polymer layer 280 on the sixth polymer layer 260 further includes performing a low-temperature heating step (S121). The low-temperature heating step (S121) is the same as the aforementioned heating step (S51), and is not repeated here.
請參考圖1R、圖3B及圖16。圖1R是根據本發明的一實施例之量測介質軟板製造方法的一步驟之側剖面圖。圖16是根據本發明的一實施例之量測介質軟板製造方法的子集流程圖。在本實施例中，可形成第五金屬層(圖未示)於第七聚合物層280之上。執行第六圖案化程序(S131)於第五金屬層之上以形成晶圓測試墊介質圖案(圖未示)，並執行電鑄製程(S132)，將晶圓測試墊介質圖案鍍上導電物質以形成第一線路層310(S13)。 Please refer to FIG. 1R, FIG. 3B and FIG. 16. FIG. 1R is a side cross-sectional view of a step of a method for manufacturing a dielectric medium flexible board according to an embodiment of the present invention. FIG. 16 is a flowchart of a subset of a method for manufacturing a measurement medium flexible board according to an embodiment of the present invention. In this embodiment, a fifth metal layer (not shown) may be formed on the seventh polymer layer 280. A sixth patterning process (S131) is performed on the fifth metal layer to form a wafer test pad dielectric pattern (not shown), and an electroforming process (S132) is performed to plate the wafer test pad dielectric pattern with a conductive substance To form a first wiring layer 310 (S13).
其中，第六圖案化程序(S131)包括形成感光層(未顯示)於第五金屬層之上(S1311)，進行照光程序(S1312)以形成接地反應圖案(圖未示)，以及進行去除程序(S1313)，將第五金屬層部分去除。更詳細地，在本實施例中，電鑄製程(S132)更包括在一部分裸露的第五金屬層(圖未示)上將第一線路層310電鑄至與第七聚合物層280的高度一致。但在其他 實施例中，第一線路層310之電鑄高度並不以此為限，並可依據實際需求進行調整及客製化。 The sixth patterning process (S131) includes forming a photosensitive layer (not shown) on the fifth metal layer (S1311), performing an illumination process (S1312) to form a ground reaction pattern (not shown), and performing a removal process. (S1313), the fifth metal layer is partially removed. In more detail, in this embodiment, the electroforming process (S132) further includes electroforming the first circuit layer 310 to a height of the seventh polymer layer 280 on a part of the exposed fifth metal layer (not shown). Consistent. But in other In the embodiment, the electroforming height of the first circuit layer 310 is not limited to this, and can be adjusted and customized according to actual needs.
最後，執行分離程序(S143)，包括以蝕刻溶液(例如是金屬蝕刻容易)滲透蝕刻，並配以超音波震盪(ultrasonic vibration)以分離第一聚合物層130及金屬分離層140。此外，分離程序(S143)還包含將第三聚合物層170及第四聚合物層180之間撕開，也將第六聚合物層260及第七聚合物層280之間撕開，以完成訊號量測介質軟板340(S14)。 Finally, a separation process is performed (S143), including penetrating etching with an etching solution (for example, metal is easy to etch), and combining with ultrasonic vibration to separate the first polymer layer 130 and the metal separation layer 140. In addition, the separation procedure (S143) also includes tearing between the third polymer layer 170 and the fourth polymer layer 180, and also tearing between the sixth polymer layer 260 and the seventh polymer layer 280 to complete The signal measurement medium flexible board 340 (S14).
請參照圖2A，在一些實施例中，線路層250具有一些繞線結構，是直接用來輸入以及輸出量測測試訊號的路徑。請參照圖2B，在一些實施例中，接地層210把接地的路徑由外圍連接到內部，可以提供量測測試訊號更好的環境。請參照圖2C，在一些實施例中，金屬分離層140可以有圖案的結構。金屬分離層140是作為製作量測介質軟板的一個基礎，但是當量測介質軟板完成之後，金屬分離層140會被去除。 Please refer to FIG. 2A. In some embodiments, the circuit layer 250 has some winding structures, which are directly used for inputting and outputting the path of the measurement test signal. Referring to FIG. 2B, in some embodiments, the ground layer 210 connects the ground path from the periphery to the inside, which can provide a better environment for measuring and testing signals. Please refer to FIG. 2C. In some embodiments, the metal separation layer 140 may have a patterned structure. The metal separation layer 140 is used as a basis for manufacturing the measurement medium flexible plate, but after the measurement medium flexible plate is completed, the metal separation layer 140 will be removed.
以下簡要敘述上述實施例的主要步驟：形成一第一金屬層(140W分離層)覆蓋於該基礎層100之上並形成一第二聚合物層150覆蓋於該第一金屬層140之上(S2)(圖1B)。形成一第二金屬層160於該第二聚合物層150之上，並執行一第一圖案化程序(S31)以形成一導電層160'(S3)(圖1C圖1D)。形成一第三聚合物層170於該導電層160'之上(S4)(圖1E)。形成一第四聚合物層180於該第三聚合物層170之上並形成一分離介面I1(S5)(圖1F)。執行一第二圖案化程序(S61)，將一印刷電路圖案(未顯示)穿透該第三聚合物層170及該第四聚合物層180顯示於一部分裸露的該導電層1602'之上，並執行一電鑄製程(S62)，將該印刷電路圖案電鑄於該部分裸露的該導電層上1602' 以形成一導電凸塊部份190(S6)(圖1G、圖1H)。形成一第三金屬層200於該第四聚合物層180之上及該導電凸塊部分190之上，執行一第三圖案化程序(S71)於該第三金屬層200之上以形成一接地圖案，並執行一電鍍製程(S72)，將該接地圖案鍍上導電物質以形成一接地層210(S7)(圖1I、圖1J)。形成一第五聚合物層220於該接地層210、該導電凸塊190部分及該第四聚合物層180之上，以形成一橋階層厚度h3(S8)(圖1K)。執行一第四圖案化程序(S91)於該第五聚合物220之上以形成一橋接圖案，並執行一電鑄製程(S92)，將該橋接圖案鍍上一橋階層230(S9)(圖1L、圖1M)。執行一第四圖案化程序(S91)於該第五聚合物220之上以形成一橋接圖案1606‘，並執行一電鑄製程(S92)，將一橋接層230鍍在該橋接圖案1606’內(S9)(圖1L、圖1M)。形成一第四金屬層240於該橋接層230及該第五聚合物層220之上，執行一第五圖案化程序(S101)於該第四金屬層240之上以形成一線路圖案，並執行一電鍍製程(S102)，將該線路圖案鍍上導電物質以形成一線路層250(S10)(圖1N、圖1O)。形成一第六聚合物層260於該線路層250及該第五聚合物220之上，以形成一介質厚度h4(S11)(圖1P)。形成一第七聚合物層280於該第六聚合物層260之上以形成一介質分離介面I2(S12)(圖1Q)。形成一第五金屬層於該第七聚合物層280之上，執行一第六圖案化程序(S131)於該第五金屬層之上以形成一晶圓測試墊介質圖案，並執行一電鑄製程(S132)，將該晶圓測試墊介質圖案鍍上導電物質以形成一第一線路層310(S13)(圖1R)。形成一第六金屬層於該第七聚合物層280及該線路層310之上，執行一第七圖案化程序(S141)，用以在該第六金屬層上形成一訊號量測介質軟板外型圖案穿透並顯示於該部分裸露的導電層(1610‘)之上，使用離子蝕刻製程將訊號量測介質軟 板外型成形行(S142)。 The following briefly describes the main steps of the above embodiment: forming a first metal layer (140W separation layer) overlying the base layer 100 and forming a second polymer layer 150 overlying the first metal layer 140 (S2 ) (Figure 1B). A second metal layer 160 is formed on the second polymer layer 150, and a first patterning process (S31) is performed to form a conductive layer 160 '(S3) (FIGS. 1C to 1D). A third polymer layer 170 is formed on the conductive layer 160 '(S4) (FIG. 1E). A fourth polymer layer 180 is formed on the third polymer layer 170 and a separation interface I1 (S5) is formed (FIG. 1F). Executing a second patterning process (S61), penetrating a printed circuit pattern (not shown) through the third polymer layer 170 and the fourth polymer layer 180 on a portion of the conductive layer 1602 'exposed, An electroforming process is performed (S62), and the printed circuit pattern is electroformed on the partially exposed conductive layer 1602 '. To form a conductive bump portion 190 (S6) (FIG. 1G, FIG. 1H). A third metal layer 200 is formed on the fourth polymer layer 180 and the conductive bump portion 190, and a third patterning process (S71) is performed on the third metal layer 200 to form a ground. Pattern, and a plating process is performed (S72), the ground pattern is plated with a conductive substance to form a ground layer 210 (S7) (FIG. 1I, FIG. 1J). A fifth polymer layer 220 is formed on the ground layer 210, the conductive bump 190 portion, and the fourth polymer layer 180 to form a bridge layer thickness h3 (S8) (FIG. 1K). A fourth patterning process (S91) is performed on the fifth polymer 220 to form a bridge pattern, and an electroforming process (S92) is performed, and the bridge pattern is plated with a bridge layer 230 (S9) (FIG. 1L) , Figure 1M). A fourth patterning process (S91) is performed on the fifth polymer 220 to form a bridge pattern 1606 ', and an electroforming process (S92) is performed, and a bridge layer 230 is plated in the bridge pattern 1606'. (S9) (FIG. 1L, FIG. 1M). A fourth metal layer 240 is formed on the bridge layer 230 and the fifth polymer layer 220, and a fifth patterning process (S101) is performed on the fourth metal layer 240 to form a circuit pattern, and executed A plating process (S102), the circuit pattern is plated with a conductive substance to form a circuit layer 250 (S10) (FIG. 1N, FIG. 10). A sixth polymer layer 260 is formed on the circuit layer 250 and the fifth polymer 220 to form a dielectric thickness h4 (S11) (FIG. 1P). A seventh polymer layer 280 is formed on the sixth polymer layer 260 to form a dielectric separation interface I2 (S12) (FIG. 1Q). A fifth metal layer is formed on the seventh polymer layer 280, a sixth patterning process (S131) is performed on the fifth metal layer to form a wafer test pad dielectric pattern, and an electroforming is performed In a process (S132), the wafer test pad dielectric pattern is plated with a conductive substance to form a first circuit layer 310 (S13) (FIG. 1R). A sixth metal layer is formed on the seventh polymer layer 280 and the circuit layer 310, and a seventh patterning process (S141) is performed to form a signal measurement medium flexible board on the sixth metal layer. The shape pattern penetrates and is displayed on the exposed conductive layer (1610 '), and the signal measurement medium is softened by an ion etching process. Plate shape forming line (S142).
綜上所述，本發明之量測介質軟板製造方法既可以使用於高頻的晶圓測試，亦可一次性的產生具有多個介質的軟板結構，達到省時又降低成本的功效。 To sum up, the method for manufacturing a measuring medium flexible board of the present invention can be used for high-frequency wafer testing, and can also generate a flexible board structure with multiple mediums at one time, achieving the effect of saving time and reducing costs.
雖然本發明已以較佳實施例揭露於上，然其並非用以限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明知保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
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| US6552555B1 (en) * | 1998-11-19 | 2003-04-22 | Custom One Design, Inc. | Integrated circuit testing apparatus |
| CN1491072A (en) * | 2002-08-27 | 2004-04-21 | ��ʿͨ��ʽ���� | Multilayer wiring board |
| TW200609516A (en) * | 2005-10-17 | 2006-03-16 | Mjc Probe Inc | Probe device of probe card |
| WO2006119405A1 (en) * | 2005-05-03 | 2006-11-09 | Sv Probe Pte Ltd | Probe card assembly with a dielectric structure |
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| CN101022695B (en) * | 2007-03-27 | 2011-05-25 | 日月光半导体制造股份有限公司 | Circuit embedded in dielectric layer non-core band thin base sheet and manufacting method |
| CN101373752B (en) * | 2007-08-20 | 2011-01-26 | 神盾股份有限公司 | Fingerprint sensing chip with flexible circuit board signal transmission structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6552555B1 (en) * | 1998-11-19 | 2003-04-22 | Custom One Design, Inc. | Integrated circuit testing apparatus |
| CN1491072A (en) * | 2002-08-27 | 2004-04-21 | ��ʿͨ��ʽ���� | Multilayer wiring board |
| WO2006119405A1 (en) * | 2005-05-03 | 2006-11-09 | Sv Probe Pte Ltd | Probe card assembly with a dielectric structure |
| TW200609516A (en) * | 2005-10-17 | 2006-03-16 | Mjc Probe Inc | Probe device of probe card |
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