TWI623874B - Substrate having transparent electrode, evaluation method of substrate having transparent electrode, method of substrate substrate, transparent panel, method of manufacturing substrate having transparent electrode, touch panel, and manufacturing method of touch panel - Google Patents
Substrate having transparent electrode, evaluation method of substrate having transparent electrode, method of substrate substrate, transparent panel, method of manufacturing substrate having transparent electrode, touch panel, and manufacturing method of touch panel Download PDFInfo
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
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Abstract
本發明之具有透明電極之基板的評估方法,其係測定於透明基板上依序層積透明介電質層及透明導電膜層之具有透明電極之基板(A)之分光反射率RA(λ)、及不存在上述具有透明電極之基板(A)之上述透明導電膜層之基板(B)之分光反射率RB(λ),計算上述分光反射率RA(λ)與上述分光反射率RB(λ)之波長之差分之光譜之絕對值△R(λ)。在於一實施形態,將上述△R(λ)與等色度函數之和C1(λ),在各波長處相乘,並以380~780nm的波長範圍積分而得之△V1之值、或將上述△R(λ)與上述C1(λ)與光源光譜L(λ)在各波長處相乘,並以380~780nm的波長範圍積分而得之△S1之值,用於作為透明電極被圖案化之非視認性之指標。 The method for evaluating a substrate having a transparent electrode according to the present invention is a method for measuring a spectral reflectance R A (λ) of a substrate (A) having a transparent electrode by sequentially laminating a transparent dielectric layer and a transparent conductive film layer on a transparent substrate. And the spectral reflectance R B (λ) of the substrate (B) in which the transparent conductive film layer of the substrate (A) having the transparent electrode is not present, and the spectral reflectance R A (λ) and the spectral reflectance are calculated. The absolute value of the spectrum of the difference in the wavelength of R B (λ) is ΔR(λ). In one embodiment, the sum of ΔR(λ) and the isochromatic function C 1 (λ) is multiplied at each wavelength, and the value of ΔV 1 is obtained by integrating the wavelength range of 380 to 780 nm. Or the above ΔR (λ) and the above C 1 (λ) and the source spectrum L (λ) are multiplied at each wavelength, and the value of ΔS 1 is obtained by integrating the wavelength range of 380 to 780 nm, and is used as The non-visuality of the transparent electrode is patterned.
Description
本發明係關於具有透明電極之基板、具有透明電極之基板的評估方法、具有透明電極之基板的製造方法、觸控面板及觸控面板的製造方法。 The present invention relates to a substrate having a transparent electrode, a method of evaluating a substrate having a transparent electrode, a method of manufacturing a substrate having a transparent electrode, a touch panel, and a method of manufacturing a touch panel.
具有透明電極之觸控面板用基板,係於透明絕緣基板上形成透明電極者,使用於作為觸控面板的位置偵測器。於觸控面板有各式各樣的偵測示意,其中之1之電容式,係用於捕捉電容的變化偵測位置、需要電容偵測用的電極圖案。電極圖案、一般係以蝕刻形成、電極係由蝕刻去除的蝕刻部(透明電極非形成部)、及電極沒有被蝕刻而殘存之非蝕刻部(透明電極形成部)所構成。 A substrate for a touch panel having a transparent electrode is formed on a transparent insulating substrate to form a transparent electrode, and is used as a position detector as a touch panel. There are various detection patterns on the touch panel, and one of them is used to capture the change position of the capacitance and the electrode pattern for capacitance detection. The electrode pattern is generally formed by etching, an etched portion (transparent electrode non-formed portion) in which the electrode is removed by etching, and a non-etched portion (transparent electrode forming portion) in which the electrode is not etched and remains.
觸控面板,由於通常係配置於顯示器上,故透明電極的圖案會被目視視認,而降低最終製品的品質。因此,在於透明電極被圖案化之具有透明電極之基板,要求不能看到圖案化之痕跡之所謂透明電極圖案(以下,亦單稱為圖案)之非視認性。 Since the touch panel is usually disposed on the display, the pattern of the transparent electrode is visually recognized, and the quality of the final product is lowered. Therefore, in the case of a substrate having a transparent electrode in which a transparent electrode is patterned, a non-visibility of a so-called transparent electrode pattern (hereinafter, simply referred to as a pattern) in which a trace of patterning cannot be seen is required.
透明電極圖案被視認的主因係於蝕刻部與非蝕刻 部之間,而發生反射率或色彩值等的光學性差異。因此,大多觸控面板用之具有透明電極之基板係藉由設計透明介電質層的膜厚或折射率等地層積構造,提升非視認性。 The main reason why the transparent electrode pattern is visually recognized is the etched portion and the non-etched portion. Between the parts, optical differences such as reflectance or color values occur. Therefore, most of the substrates having transparent electrodes for touch panels are designed to have a laminated structure by designing a film thickness or a refractive index of a transparent dielectric layer, thereby improving non-visibility.
[先前技術文獻] [Previous Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2010-182528號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-182528
[專利文獻2]國際公開第2010/114056號 [Patent Document 2] International Publication No. 2010/114056
[專利文獻3]日本特開2013-84376號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2013-84376
[專利文獻4]日本特開2010-76232號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2010-76232
如此,即便透明電極圖案的非視認性係觸控面板用之具有透明電極之基板的重要特性,並沒有實現以目視之光學性指標之定量的數值管理。 As described above, even if the non-visibility of the transparent electrode pattern is an important characteristic of the substrate having the transparent electrode for the touch panel, quantitative numerical management with a visual optical index is not realized.
例如,於專利文獻1,記載使用由反射光譜遵照JIS Z8701算出之色差△E作為非視認性之指標的技術。專利文獻2,記載使用蝕刻部與非蝕刻部之反射率光譜之差的積算值作為非視認性的指標的技術。專利文獻3,記載使用反射光譜的平均值之差的絕對值之技術。專利文獻4,記載使用反射光譜之差的絕對值與標準比視感度的相乘積分所得之值。 For example, Patent Document 1 describes a technique in which a color difference ΔE calculated by a reflection spectrum in accordance with JIS Z8701 is used as an index of non-visibility. Patent Document 2 describes a technique in which an integrated value of a difference between reflectance spectra of an etched portion and a non-etched portion is used as an index of non-visibility. Patent Document 3 describes a technique of using the absolute value of the difference between the average values of the reflection spectra. Patent Document 4 describes a value obtained by multiplying the absolute value of the difference between the reflection spectra and the standard specific visual sensitivity.
但是,在於上述專利文獻1之基於△E之評估,或在於上述專利文獻2~4之基於反射光譜之差之絕對值,或積算值之評估,係以人類的官能評估而未必一致,現狀係為品質管 理,需要以人的目視之評估。因此,根據評估者的熟練度、身體狀況等而有產生判定誤差的問題。 However, it is based on the evaluation of ΔE in the above Patent Document 1, or the evaluation of the absolute value of the difference based on the reflection spectrum of the above Patent Documents 2 to 4, or the evaluation of the integrated value, which is not necessarily consistent with the evaluation of the human function, and the present situation is Quality tube Rational, it needs to be evaluated by human vision. Therefore, there is a problem that a judgment error occurs depending on the evaluator's proficiency, physical condition, and the like.
本發明者們銳意研究的結果,發現以下式1所示之△V1、式2所示之△S1、式3所示之△V2或式4所示之△S2,較先前習知之指標,精良地顯現人類的評估結果。 The present inventors have intensively studied, and found that as shown in the following formula of △ 1 V 1, as shown in formula 2 of △ S 1, △ V shown in FIG. 2 of formula 3 or 4 of the formula shown △ S 2, than the previous learning Knowing the indicators, the results of human assessment are well displayed.
即,本發明係關於具有透明電極之基板的評估方法。本發明之評估方法,係測定於透明基板上依序層積透明介電質層及透明導電膜層之具有透明電極之基板(A)之分光反射率RA(λ)、及不存在上述具有透明電極之基板(A)之上述透明導電膜層之基板(B)之分光反射率RB(λ),計算上述分光反射率RA(λ)與上述分光反射率RB(λ)之波長之差分之光譜之絕對值△R(λ)。 That is, the present invention relates to an evaluation method of a substrate having a transparent electrode. The evaluation method of the present invention is to measure the spectral reflectance R A (λ) of the substrate (A) having a transparent electrode in which a transparent dielectric layer and a transparent conductive film layer are sequentially laminated on a transparent substrate, and the absence of the above-mentioned Calculating the spectral reflectance R B (λ) of the substrate (B) of the transparent conductive film layer of the transparent electrode substrate (A), and calculating the wavelength of the spectral reflectance R A (λ) and the spectral reflectance R B (λ) The absolute value of the difference spectrum is ΔR(λ).
在於一實施形態,如下式1所示,將上述△R(λ)與等色度函數x(λ)、y(λ)及z(λ)之和C1(λ),在各波長處相乘,並以380~780nm的波長範圍積分而得之△V1之值、或如下式2所示,將上述△R(λ)與上述C1(λ)與光源光譜L(λ)在各波長處相乘,並以380~780nm的波長範圍積分而得之△S1之值,用於作為透明電極被圖案化之具有透明電極之基板之透明電極形成部與透明電極之非形成部之反射光之視認性之差,即,透明電極圖案之非視認性之指標。 In one embodiment, as shown in the following formula 1, the sum of the above ΔR(λ) and the isochromatic functions x(λ), y(λ), and z(λ), C 1 (λ), at each wavelength Multiplying the value of ΔV 1 obtained by integrating the wavelength range of 380 to 780 nm or as shown in the following formula 2, and the above ΔR(λ) and the above C 1 (λ) and the light source spectrum L(λ) are each The value of ΔS 1 obtained by multiplying at a wavelength and integrating the wavelength range of 380 to 780 nm, for a transparent electrode forming portion of a substrate having a transparent electrode patterned as a transparent electrode, and a non-forming portion of the transparent electrode The difference in visibility of reflected light, that is, the index of non-visibility of the transparent electrode pattern.
此外,在於其他的實施形態,係如下式3所示,將上述△R(λ)與使用等色度函數x(λ)、y(λ)及z(λ)並以式「C2(λ)=l×x(λ)+m×y(λ)+n×z(λ)」所表示之C2(λ)(其中,l=0~1.25、m=0~2、n=0.4~3、l+m+n=3),在各波長處相乘,並以可見光區域的下限波長λ1(nm)~上限波長λ2(nm)的波長範圍積分而得之△V2之值、或如下記式4所示,將上述△R(λ)與上述C2(λ)(其中,l=0~1.6、m=0~1.6、n=0.4~3、l+m+n=3)與光源光譜L(λ),在各波長處相乘,並以λ1(nm)~λ2(nm)的波長範圍積分而得之△S2之值用於作為透明電極圖案之非視認性之指標。 Further, in another embodiment, as shown in the following Expression 3, the above-described ΔR(λ) and the use of the chromaticity functions x(λ), y(λ), and z(λ) are expressed by the formula "C 2 (λ) ) = 1 × x (λ) + m × y (λ) + n × z (λ)" C 2 (λ) (where l = 0 to 1.25, m = 0 to 2, n = 0.4 ~) 3, l+m+n=3), multiplying at each wavelength, and integrating the wavelength range of the lower limit wavelength λ 1 (nm) to the upper limit wavelength λ 2 (nm) of the visible light region to obtain the value of ΔV 2 Or, as shown in the following Equation 4, the above ΔR(λ) and the above C 2 (λ) (where l=0 to 1.6, m=0 to 1.6, n=0.4 to 3, l+m+n= 3) The value of ΔS 2 obtained by multiplying the light source spectrum L(λ) at each wavelength and integrating the wavelength range of λ 1 (nm) to λ 2 (nm) is used as the non-transparent electrode pattern. Indicator of visibility.
本發明係關於於透明基板上依序層積透明介電質層及透明導電膜層之具有透明電極之基板的製造方法。本發明之具有透明電極之基板的製造方法,其特徵係在於:進行上述具有透明電極之基板的評估,判定上述△V1、△S1、△V2及△S2之任一之值是否在於既定的範圍內。 The present invention relates to a method of manufacturing a substrate having a transparent electrode in which a transparent dielectric layer and a transparent conductive film layer are sequentially laminated on a transparent substrate. The method for producing a substrate having a transparent electrode according to the present invention is characterized in that the evaluation of the substrate having the transparent electrode is performed, and whether the value of any of the ΔV 1 , ΔS 1 , ΔV 2 and ΔS 2 is determined It is within the established scope.
本發明之一態樣係,關於以上述製造方法製造之 具有透明電極之基板。 One aspect of the present invention relates to a manufacturing method manufactured by the above manufacturing method A substrate having a transparent electrode.
本發明係關於包含於透明基板上依序層積透明介電質層及透明導電膜層之具有透明電極之基板(A)、及不存在上述具有透明電極之基板(A)之上述透明導電膜層之基板(B)之具有透明電極之基板。本發明之具有透明電極之基板,上述式1所示之△V1之值為240% nm以下,或上述式2所示之△S1之值為7.0% nm以下。 The present invention relates to a substrate (A) having a transparent electrode comprising a transparent dielectric layer and a transparent conductive film layer sequentially laminated on a transparent substrate, and the above transparent conductive film without the substrate (A) having the transparent electrode A substrate having a transparent electrode of the substrate (B) of the layer. The present invention has the transparent electrode substrate 1 of the formula V is shown in the △ 1 240% nm or less, or the formula of the value of △ S 2 1 of 7.0% nm or less.
本發明係關於一種觸控面板,其特徵在於:包括上述具有透明電極之基板。 The present invention relates to a touch panel characterized by comprising the above substrate having a transparent electrode.
本發明係關於一種觸控面板的製造方法,其特徵在於:進行上述具有透明電極之基板的評估方法,或上述具有透明電極之基板的製造方法。再者,本發明係關於一種觸控面板,其特徵在於:藉由上述製造方法製造。 The present invention relates to a method of manufacturing a touch panel, characterized in that the method for evaluating a substrate having a transparent electrode or the method for manufacturing a substrate having the transparent electrode is performed. Furthermore, the present invention relates to a touch panel characterized by being manufactured by the above manufacturing method.
根據本發明,在於透明電極被圖案化之具有透明電極之基板或觸控面板,可將透明電極圖案之非視認性,定量地正確判定良莠,不會因評估者的熟練度等而發生圖案非視認性之判定差之先前技術的問題。藉由將根據本發明之評估方法,使用於具有透明電極之基板之製造之指標,可提供透明電極圖案之非視認性良好的具有透明電極之基板。 According to the present invention, in a substrate or a touch panel having a transparent electrode in which a transparent electrode is patterned, the non-visibility of the transparent electrode pattern can be accurately and quantitatively determined, and the pattern does not occur due to the evaluator's proficiency or the like. A prior art problem of poor judgment of non-visibility. By using the evaluation method according to the present invention for the production of a substrate having a transparent electrode, it is possible to provide a substrate having a transparent electrode and having a non-visually good transparent electrode.
1‧‧‧透明板 1‧‧‧Transparent board
2‧‧‧透明介電質層 2‧‧‧Transparent dielectric layer
3‧‧‧透明導電膜層 3‧‧‧Transparent conductive film layer
第1圖係表示本發明之一實施形態之具有透明電極之基板(A)之層構成之剖面之示意圖。 Fig. 1 is a schematic view showing a cross section of a layer structure of a substrate (A) having a transparent electrode according to an embodiment of the present invention.
第2圖係表示本發明之一實施形態之基板(B)之層構成之剖面之示意圖。 Fig. 2 is a schematic view showing a cross section of a layer structure of a substrate (B) according to an embodiment of the present invention.
第3圖係表示C1(λ)之波長依存性之圖表。 Figure 3 is a graph showing the wavelength dependence of C 1 (λ).
第4圖係表示晝光色光源的強度的波長依存性之圖表。 Fig. 4 is a graph showing the wavelength dependence of the intensity of the neon light source.
第5圖係表示D65光源之強度之波長依存性之圖表。 Figure 5 is a graph showing the wavelength dependence of the intensity of the D65 source.
第6圖係表示在於實施例1之△V1與目視評估之非視認性之相關性之圖表。 FIG 6 based on the correlation graph that represents the visibility of a visual and non-visual evaluation of Example 1 △ V of the embodiment.
第7圖係表示在於實施例2之△S1與目視評估之非視認性之相關性之圖表。 Fig. 7 is a graph showing the correlation between the ΔS 1 of the second embodiment and the non-visibility of the visual evaluation.
第8圖係表示在於參考例1之△S1與目視評估之非視認性之相關性之圖表。 Figure 8 represents a system wherein the correlation graph of the non-visibility of a visual △ S 1 and the Reference Example was visually assessed.
第9圖係表示在於比較例1之△E與目視評估之非視認性之相關性之圖表。 Fig. 9 is a graph showing the correlation between the ΔE of Comparative Example 1 and the non-visibility of the visual evaluation.
第10圖係表示在於比較例2之反射光譜之差之積算值與目視評估之非視認性之相關性之圖表。 Fig. 10 is a graph showing the correlation between the integrated value of the difference in the reflectance spectra of Comparative Example 2 and the non-visibility of the visual evaluation.
第11圖係表示在於比較例3之反射光譜之平均差的絕對值與目視評估之非視認性之相關性之圖表。 Fig. 11 is a graph showing the correlation between the absolute value of the average difference of the reflectance spectra of Comparative Example 3 and the non-visibility of the visual evaluation.
第12圖係表示在於比較例4之視感反射率差之絕對值之積分值與目視評估之非視認性之相關性之圖表。 Fig. 12 is a graph showing the correlation between the integral value of the absolute value of the difference in the visual reflectance of Comparative Example 4 and the non-visibility of the visual evaluation.
第13圖係表示在於△V2,等色度函數C2(λ)之各係數l、m及n之值與目視評估之關係之平面三角座標。 Figure 13 is a diagram showing the plane trigonometry of the relationship between the values of the coefficients φV 2 , the chrominance functions C 2 (λ), and the values of n and the visual evaluation.
第14圖係表示在於△S2,等色度函數C2(λ)之各係數l、m及n之值與目視評估之關係之平面三角座標。 Figure 14 is a diagram showing the plane trigonometry of the relationship between the values of the coefficients 1, m, and n of ΔS 2 , the chrominance function C 2 (λ), and the visual evaluation.
以下,說明本發明之較佳的實施形態。首先,說明使用於本發明之具有透明電極之基板的評估方法(以下,亦單稱為「本發明的評估方法」)之具有透明電極之基板。 Hereinafter, preferred embodiments of the present invention will be described. First, a substrate having a transparent electrode used in the evaluation method (hereinafter, simply referred to as "the evaluation method of the present invention") of the substrate having a transparent electrode of the present invention will be described.
第1圖係於透明基板1之上形成透明介電質層2,於其上形成透明導電膜層3之具有透明電極之基板(A)之剖面圖。第2圖係由具有透明電極之基板(A)去除透明導電膜層3之基板(B)之剖面圖。再者,關於在於第1圖及第2圖之厚度的尺寸關係,為圖面的明瞭化與簡化而有適宣變更,並未以實際尺寸關係表示。此外,在於各圖,相同的參照符號係表示相同的技術事項。 Fig. 1 is a cross-sectional view showing a substrate (A) having a transparent electrode on which a transparent dielectric layer 2 is formed on a transparent substrate 1 and a transparent conductive film layer 3 is formed thereon. Fig. 2 is a cross-sectional view of the substrate (B) in which the transparent conductive film layer 3 is removed from the substrate (A) having a transparent electrode. In addition, the dimensional relationship between the thicknesses of the first drawing and the second drawing is changed in accordance with the simplification and simplification of the drawing, and is not represented by the actual dimensional relationship. In addition, in the drawings, the same reference numerals denote the same technical matters.
透明基板之基材,只要至少在可見光區域為無色透明,並無特別限定,可於其上形成透明電極者即可。可舉例如,玻璃、聚對苯二甲酸乙二醇酯(PET)或聚對苯二甲酸丁二醇酯(PBT)、聚萘二甲酸丁二醇酯(PEN)等的聚酯樹脂或環烯烴系樹脂、聚碳酸酯樹脂、聚醯亞胺樹脂、纖維素系樹脂等。其中,可良好地使用聚酯樹脂或環烯烴系樹脂,可特別良好地使用聚對苯二甲酸乙二醇酯。基材的厚度,並無特別限定,以0.01~0.4mm的厚度為佳。只要在上述範圍內,則充分可提高透明基板的耐久性,由於具有適度的柔軟性,可以生產性佳的捲對捲模式製膜。 The base material of the transparent substrate is not particularly limited as long as it is colorless and transparent at least in the visible light region, and a transparent electrode may be formed thereon. For example, a polyester resin or a ring of glass, polyethylene terephthalate (PET) or polybutylene terephthalate (PBT) or polybutylene naphthalate (PEN) may be mentioned. An olefin resin, a polycarbonate resin, a polyimide resin, a cellulose resin, or the like. Among them, a polyester resin or a cycloolefin resin can be preferably used, and polyethylene terephthalate can be used particularly preferably. The thickness of the substrate is not particularly limited, and is preferably 0.01 to 0.4 mm. When it is in the above range, the durability of the transparent substrate can be sufficiently improved, and since it has moderate flexibility, it can be formed into a roll-to-roll mode with good productivity.
透明介電質層的材料,可使用例如,以丙烯酸樹脂、矽酮樹脂;氧化矽、氧化鈦、氧化鈮、氧化鋯、氧化鋁等的氧化物為主成分之材料;或是以氟化鈣、氟化鎂作為主成分之材料。構成透明介電質層之氧化物,以至少在可見光區域為無色 透明,而電阻率以10Ω‧Cm以上者為佳。此外,透明介電質層之厚度,只要滿足上述電阻率,可為任意厚度。透明介電質層,可僅由1層構成,亦可由2層以上構成。 As the material of the transparent dielectric layer, for example, an acrylic resin, an anthrone resin; a material mainly composed of an oxide of cerium oxide, titanium oxide, cerium oxide, zirconium oxide, or aluminum oxide; or calcium fluoride; And magnesium fluoride as a main component material. An oxide constituting the transparent dielectric layer to be colorless at least in the visible region It is transparent, and the resistivity is preferably 10 Ω ‧ cm or more. Further, the thickness of the transparent dielectric layer may be any thickness as long as the above specific resistance is satisfied. The transparent dielectric layer may be composed of only one layer or two or more layers.
透明基板的單面或者兩面,亦可以提高觸控面板用透明電極的耐久性等的目的,預先層積亦係透明介電質層之硬塗層。硬塗層的材料,可使用丙烯酸樹脂、矽酮樹脂等。硬塗層的膜厚,由可具有適度的耐久性與柔軟性,以1~10μm為佳。 On one or both sides of the transparent substrate, the durability of the transparent electrode for a touch panel can be improved, and a hard coat layer of a transparent dielectric layer is laminated in advance. As the material of the hard coat layer, an acrylic resin, an anthrone resin or the like can be used. The film thickness of the hard coat layer is preferably 1 to 10 μm because of moderate durability and flexibility.
於上述透明基板,亦可以提升透明基板與透明導電膜層之附著性的目的,施以表面處理。表面處理的手段,有例如,藉由使基板表面帶電性極性而提高附著力的法等,具體而言,可舉電暈放電、電漿法等。在於本發明之透明導電膜層與透明基板之間的透明介電質層,亦可使其具有提升密著性之效果,特別是只要是SiOx(x=1.8~2.0),由不會損及光學特性之點亦佳。 The transparent substrate may also be subjected to a surface treatment for the purpose of improving the adhesion between the transparent substrate and the transparent conductive film layer. The means for the surface treatment is, for example, a method of improving the adhesion by charging the surface of the substrate, and specifically, a corona discharge, a plasma method, or the like. The transparent dielectric layer between the transparent conductive film layer of the present invention and the transparent substrate can also have the effect of improving the adhesion, especially if it is SiOx (x=1.8~2.0), it will not be damaged. The point of optical properties is also good.
透明導電膜層的材料,只要是可使透明性與導電性並存者,並無特別限定。如此的材料,可舉氧化銦、氧化鋅、氧化錫為主成分之材料等。其中,由低電阻的觀點,可良好地使用氧化銦為主成分的材料。 The material of the transparent conductive film layer is not particularly limited as long as it can coexist with transparency and conductivity. Such a material may, for example, be a material containing indium oxide, zinc oxide or tin oxide as a main component. Among them, from the viewpoint of low electric resistance, a material containing indium oxide as a main component can be favorably used.
在於本說明書,以某物質「作為主成分」,係指該物質之含量為51重量%以上,以70重量%以上為佳,以90重量%以上更佳。只要不損及本發明的功能,於各層,亦可含有主成分以外的成分。 In the present specification, the "main component" of a substance means that the content of the substance is 51% by weight or more, preferably 70% by weight or more, more preferably 90% by weight or more. The components other than the main component may be contained in each layer as long as the function of the present invention is not impaired.
透明導電膜層之形成方法,並無特別限定,可以 濺鍍或離子鍍等的乾式製程、溶膠凝膠塗層等的濕式製程等,按照所要求的特性,適宜選擇。 The method for forming the transparent conductive film layer is not particularly limited and may be A dry process such as sputtering or ion plating, a wet process such as a sol-gel coating, or the like is suitably selected according to the required characteristics.
在於電容式觸控面板等的觸控面板用之具有透明電極之基板,於透明導電膜層的面內的一部以蝕刻等圖案化使用。透明導電膜層的圖案(透明電極圖案),係例如,將具有透明電極之基板的透明導電膜層的一部分藉由蝕刻去除的手法,或於透明導電膜層之製膜時,將透明導電膜層以一部分不製膜的手法形成。藉由蝕刻去除透明導電膜層的手法,已知有將感光性抗蝕劑塗布後,以微影蝕刻等形成抗蝕劑的圖案,將露出的透明導電膜層以蝕刻液去除的方法。即使是此外的手法,只要可去除用於形成既定圖案的透明導電膜層,可任意使用。將透明導電膜層,一部分不製膜的手法,可舉於基板形成掩模圖案之後,形成透明導電膜層,去除掩模部的手法等。 A substrate having a transparent electrode for a touch panel such as a capacitive touch panel is patterned by etching or the like in a portion of the surface of the transparent conductive film layer. The pattern (transparent electrode pattern) of the transparent conductive film layer is, for example, a method of removing a part of the transparent conductive film layer of the substrate having the transparent electrode by etching, or a transparent conductive film when forming a film of the transparent conductive film layer. The layer is formed in a part that does not form a film. A method of removing a transparent conductive film layer by etching, and a method of forming a resist by photolithography or the like after applying a photosensitive resist, and removing the exposed transparent conductive film layer by an etching liquid is known. Even in other methods, as long as the transparent conductive film layer for forming a predetermined pattern can be removed, it can be used arbitrarily. A method of forming a transparent conductive film layer and a part of which does not form a film may be a method of forming a transparent conductive film layer after forming a mask pattern on a substrate, and removing a mask portion.
其次,說明本發明之具有透明電極之基板的評估方法。於本發明之具有透明電極之基板的評估方法,首先測定於透明基板上依序層積透明介電質層及透明導電膜層之具有透明電極之基板(A)之分光反射率RA(λ)、及上述具有透明電極之基板(A)之沒有上述透明導電膜層之基板(B)之分光反射率RB(λ),計算在於上述分光反射率RA(λ)與上述分光反射率RB(λ)之各波長之差分的光譜的絕對值△R(λ)。 Next, an evaluation method of the substrate having a transparent electrode of the present invention will be described. In the evaluation method of the substrate having the transparent electrode of the present invention, first, the spectral reflectance R A (λ) of the substrate (A) having the transparent electrode sequentially laminated on the transparent substrate on the transparent dielectric layer and the transparent conductive film layer is measured. And the spectral reflectance R B (λ) of the substrate (B) having the transparent electrode layer (A) without the transparent conductive film layer, calculated by the spectral reflectance R A (λ) and the spectral reflectance The absolute value ΔR(λ) of the spectrum of the difference between the wavelengths of R B (λ).
[具有透明電極之基板(A)] [Substrate (A) with transparent electrode]
具有透明電極之基板(A),可使用於介電質層上形成透明導電膜層之後,形成圖案之前者,或形成圖案之後的具有透明電極之基板的非蝕刻部。以觸控面板進行評估時,在進行透明 導電膜層的圖案化之後,有圖案過細而無法進行反射率測定之情形。如此之情形時,作為反射率測定用的抽樣樣品,以可進行測定地變更圖案形狀,或不進行圖案化或蝕刻,使用透明電極存在於全面的具有透明電極之基板(A)形成評估用基板。 The substrate (A) having a transparent electrode can be used for forming a transparent conductive film layer on the dielectric layer, forming a pattern, or forming a non-etched portion of the substrate having the transparent electrode after the pattern is formed. Transparent when evaluating with the touch panel After the patterning of the conductive film layer, the pattern is too thin to measure the reflectance. In such a case, as a sample for reflectance measurement, the pattern shape can be changed by measurement, or patterning or etching is not performed, and a transparent electrode is present on the entire substrate (A) having a transparent electrode to form an evaluation substrate. .
於利用具有透明電極之基板的觸控面板,將透明導電膜層製膜後,有藉由退火進行透明導電膜層的結晶化。構成透明導電膜層之材料(ITO等),由於折射率在結晶化前後會變化,故透明電極圖案的非視認性亦會在結晶化前後變化。因此,通常,係根據結晶化後的透明導電膜層的光學特性進行光學設計。此外,於結晶化前的透明導電膜層,ITO等本身容易將光吸收,故透明電極圖案容易被視認。由以上的理由,進行透明導電膜層的結晶化時,使用將透明導電膜層結晶化者作為具有透明電極之基板(A),可作高精度的評估。 After the transparent conductive film layer is formed by a touch panel using a substrate having a transparent electrode, crystallization of the transparent conductive film layer is performed by annealing. The material (ITO or the like) constituting the transparent conductive film layer changes its refractive index before and after crystallization, so that the non-visibility of the transparent electrode pattern also changes before and after crystallization. Therefore, in general, optical design is performed in accordance with the optical characteristics of the crystallized transparent conductive film layer. Further, in the transparent conductive film layer before crystallization, ITO or the like easily absorbs light, and thus the transparent electrode pattern is easily recognized. For the reason described above, when the transparent conductive film layer is crystallized, the substrate (A) having a transparent electrode can be crystallized, and the evaluation can be performed with high precision.
[基板(B)] [Substrate (B)]
基板(B),係上述具有透明電極之基板(A)的透明導電膜層不存在的狀態者。可將具有透明電極之基板(A)的透明導電膜層蝕刻之基板,或透明導電膜層之製膜前的階段的基板,用於作為基板(B)。亦可使用形成圖案後的具有透明電極之基板的蝕刻部作為基板(B)。在於圖案化製程,透明介電質層會被蝕刻,或會變質之情形,藉由利用經過蝕刻製程者作為測定反射率的基板(B),可作接近實態的高精度評估。 The substrate (B) is in a state in which the transparent conductive film layer of the substrate (A) having the transparent electrode is not present. A substrate on which a transparent conductive film layer of a substrate (A) having a transparent electrode is etched, or a substrate at a stage before film formation of a transparent conductive film layer can be used as the substrate (B). An etched portion of the patterned substrate having a transparent electrode may be used as the substrate (B). In the patterning process, the transparent dielectric layer is etched or deteriorated. By using the etching process as the substrate (B) for measuring the reflectance, it is possible to perform a highly accurate evaluation close to the real state.
蝕刻的方法,可按照觸控面板的製程,可適切地選擇濕式製程、或使用電漿的乾式製程等的方法。 The etching method can be selected according to the process of the touch panel, and the wet process or the dry process using the plasma can be appropriately selected.
以觸控面板進行評估時,與具有透明電極之基板 (A)之情形同樣地,有圖案過細而無法進行測定反射率之情形。如此之情形,反射率測定用的抽樣樣品,以可進行測定地變更圖案形狀,或不進行圖案化或蝕刻,使用透明電極存在於全面的具有透明電極之基板(B)形成評估用基板。 When evaluating with a touch panel, a substrate having a transparent electrode In the case of (A), the pattern is too thin to measure the reflectance. In this case, the sample sample for reflectance measurement is changed in pattern shape by measurement, or is not patterned or etched, and a transparent electrode is present on the entire substrate (B) having a transparent electrode to form an evaluation substrate.
[反射光譜測定] [Refracting Spectral Measurement]
反射光譜的測定,可遵照JIS Z8722的規格的方法進行。反射光譜的測定方法,可舉使用線上分光反射率計於製膜步驟中,於線上測定的方法,於製膜結束之後,以離線分光光度計測定的方法,為檢查組入簡易觸控面板的測定方法、測定完成的觸控面板製品的方法等。再者,分光反射率RA(λ)與分光反射率RB(λ),均如「於製膜結束後以離線分光光度計測定」等,以相同步驟測定為佳。此外,分光反射率的差分的絕對值△R(λ),使用於製造步驟的指標時,於RB(λ)的測定考慮於製膜階段的作業很重要,則測定反射光譜的方法,於製膜步驟中或製膜結束後,使用分光反射率計或分光光度計測定為佳,特別是,在製膜結束後測定為佳。 The measurement of the reflectance spectrum can be carried out in accordance with the method of JIS Z8722. The method for measuring the reflectance spectrum is an on-line measurement method using an on-line spectroscopic reflectance meter, and a method of measuring on a line after the film formation is completed, and an offline spectrophotometer is used for the inspection to form a simple touch panel. The measurement method, the method of measuring the completed touch panel product, and the like. Further, the spectral reflectance R A (λ) and the spectral reflectance R B (λ) are preferably measured in the same step as "measured by an off-line spectrophotometer after completion of film formation". In addition, when the absolute value ΔR(λ) of the difference of the spectral reflectance is used in the index of the manufacturing step, the method of measuring the reflection spectrum is considered when the measurement of R B (λ) is important in the film forming stage. In the film forming step or after the film formation is completed, it is preferably measured using a spectroscopic reflectometer or a spectrophotometer, and in particular, it is preferably measured after the film formation is completed.
計算上述△R(λ)之後,在於一實施形態,如上述式1所示,將上述△R(λ)與等色度函數x(λ)、y(λ)及z(λ)之和之C1(λ),在各波長處相乘,並以380~780nm的波長範圍積分,求△V1之值。或,如上述式2所示,將上述△R(λ)與上述C1(λ)與光源光譜L(λ),在各波長處相乘、並以380~780nm的波長範圍積分求△S1之值。在此,C1(λ)係使用等色度函數x(λ)、y(λ)及z(λ),以式「C1(λ)=x(λ)+y(λ)+z(λ)」表示的函數。如後所述,光源光譜L(λ)係,在於最終製品的使用環境等之光源光譜,使 用於分光反射率RA(λ)及分光反射率RB(λ)之測定之光源的光譜,並不一定需要與L(λ)相同。 After calculating ΔR(λ), in one embodiment, as shown in the above formula 1, the ΔR(λ) and the equal chromaticity functions x(λ), y(λ), and z(λ) are summed. C 1 (λ) is multiplied at each wavelength and integrated over a wavelength range of 380 to 780 nm to obtain a value of ΔV 1 . Or, as shown in the above formula 2, the above ΔR(λ) and the above C 1 (λ) and the light source spectrum L(λ) are multiplied at respective wavelengths, and ΔS is obtained by integrating the wavelength range of 380 to 780 nm. 1 value. Here, C 1 (λ) and the like using the chromaticity-based functions x (λ), y (λ ) and z (λ), to the formula "C 1 (λ) = x ( λ) + y (λ) + z ( Function represented by λ)". As will be described later, the light source spectrum L(λ) is the spectrum of the light source used for the measurement of the spectral reflectance R A (λ) and the spectral reflectance R B (λ) in the light source spectrum of the use environment of the final product. It does not necessarily need to be the same as L(λ).
此外,在於其他的實施形態,如上述式3所示,將上述△R(λ)與C2(λ),在各波長處相乘,並以可見光區域的下限波長λ1(nm)~上限波長λ2(nm)的波長範圍積分求△V2之值。或,如上述式4所示,將上述△R(λ)與上述C2(λ)與光源光譜L(λ),在各波長處相乘,並以λ1(nm)~λ2(nm)的波長範圍積分求△S2之值。在此,C2(λ)係使用等色度函數x(λ)、y(λ)及z(λ),以式「C2(λ)=l×x(λ)+m×y(λ)+n×z(λ)」表示之函數。 Further, in another embodiment, as shown in the above formula 3, the above-mentioned ΔR(λ) and C 2 (λ) are multiplied at respective wavelengths, and the lower limit wavelength λ 1 (nm) to the upper limit of the visible light region is used. The wavelength range of the wavelength λ 2 (nm) is integrated to obtain the value of ΔV 2 . Or, as shown in the above formula 4, the above ΔR(λ) and the above C 2 (λ) and the source spectrum L(λ) are multiplied at each wavelength, and are λ 1 (nm) λ 2 (nm) The wavelength range is integrated to find the value of ΔS 2 . Here, C 2 (λ) uses the isochromatic functions x(λ), y(λ), and z(λ) with the formula "C 2 (λ) = l × x (λ) + m × y (λ) ) +n × z(λ)" is a function.
[等色度函數] [isochromatic function]
在於上述等色度函數,係表示人類的光感度的波長依存性,根據國際照明委員會(CIE)正規化。於CIE的規格之中,等色度函數係反映人類具有3維的色度座標,以x(λ)、y(λ)及z(λ)3個函數規定。上述C1(λ)係加總x(λ)、y(λ)及z(λ)的函數,表示人對何種波長光感覺較多。表示人對何種波長的光感覺較多的函數,於上述C1(λ)之外,亦存在明處視標準比視感度或暗處視標準比視感度。相對於明處視標準比視感度或暗處視標準比視感度,係將重點放置於明亮度的函數,C1(λ)係將重點放至於色彩的函數。因此,藉由使用C1(λ),可正確地反映顏色的差異,結果,可提升非視認性的評估精度。 The above-described chromaticity function indicates the wavelength dependence of the human light sensitivity and is normalized according to the International Commission on Illumination (CIE). Among the specifications of CIE, the isochromatic function reflects that humans have 3-dimensional chromaticity coordinates, which are defined by three functions: x(λ), y(λ), and z(λ). The above C 1 (λ) is a function of the total x (λ), y (λ), and z (λ), which indicates which wavelength the person feels more. A function indicating how many people feel light at which wavelength, in addition to the above C 1 (λ), there is also a visual standard than the visual sensitivity or the dark standard standard visual sensitivity. The focus is on the brightness as a function of the visual sensibility or the darkness of the standard than the visual sensibility, and the C 1 (λ) system focuses on the color function. Therefore, by using C 1 (λ), the difference in color can be correctly reflected, and as a result, the accuracy of evaluation of non-visibility can be improved.
在於本發明,x(λ)、y(λ)及z(λ)之值,使用10度視野之值CIE(1964)10-deg color matching functions為佳。於第3圖表示由10度視野之等色度函數所求得之C1(λ)。再者,x(λ)、y(λ)及z(λ)之值,亦可反映最終製品的使用環境等,而使用2 度視野之值。 In the present invention, the values of x(λ), y(λ), and z(λ) are preferably CIE (1964) 10-deg color matching functions using a 10-degree field of view. Fig. 3 shows C 1 (λ) obtained from the chromaticity function of a 10-degree field of view. Furthermore, the values of x(λ), y(λ), and z(λ) may also reflect the environment in which the final product is used, and the value of the 2 degree field of view is used.
上述C2(λ),係將C1(λ)擴張之函數,以式「C2(λ)=l×x(λ)+m×y(λ)+n×z(λ)」(其中,l+m+n=3)表示。在於本發明,使用C2(λ),亦可提升非視認性的評估精度。 The above C 2 (λ) is a function of expanding C 1 (λ) by the formula "C 2 (λ) = l × x (λ) + m × y (λ) + n × z (λ)" , l+m+n=3) indicates. In the present invention, the use of C 2 (λ) can also improve the accuracy of evaluation of non-visibility.
求△V2之值時,由可精度良好地顯示非視認性的評估結果的觀點,於上述式中,l=0~1.25、m=0~2、n=0.4~3,以l=0.05~1.2、m=0~2、n=0.6~3為佳,以l=0.5~1、m=0.6~1.6、n=0.7~1.9更佳。再者,l=m=n=1時,(即,C2(λ)=C1(λ)時)最佳(參照後述的實施例3~24及第13圖)。 When the value of ΔV 2 is obtained, from the viewpoint of accurately displaying the evaluation result of non-visibility, in the above formula, l=0 to 1.25, m=0 to 2, n=0.4 to 3, and l=0.05. ~1.2, m=0~2, n=0.6~3 is better, and l=0.5~1, m=0.6~1.6, n=0.7~1.9 is better. Further, when l = m = n = 1, (i.e., C 2 (λ) = C 1 (λ) is optimum (refer to Examples 3 to 24 and Fig. 13 which will be described later).
求△S2之值時,由可精度良好地顯示非視認性的評估結果的觀點,上述式中,l=0~1.6、m=0~1.6、n=0.4~3,以l=0.05~1.6、m=0~1.4、n=0.6~3為佳,以l=0.2~1.6、m=0.2~1.25、n=0.6~2.6更佳,以l=0.6~1.3、m=0.6~1.1、n=0.8~1.9最佳。再者,l=m=n=1時(即、C2(λ)=C1(λ)時)最佳(參照後述實施例25~47及第14圖)。 When the value of ΔS 2 is obtained, from the viewpoint of accurately displaying the evaluation result of non-visibility, in the above formula, l=0 to 1.6, m=0 to 1.6, n=0.4 to 3, and l=0.05. 1.6, m=0~1.4, n=0.6~3 is better, l=0.2~1.6, m=0.2~1.25, n=0.6~2.6 is better, l=0.6~1.3, m=0.6~1.1, n=0.8~1.9 is the best. In addition, when l=m=n=1 (that is, when C 2 (λ)=C 1 (λ) is optimal (refer to Examples 25 to 47 and FIG. 14 described later).
[光源光譜] [Light source spectrum]
使用於計算△S1或△S2之光源光譜,可按照最終製品的使用環境等設定。可舉例如,太陽光或D65光源、螢光燈等、各種光源。假定最終製品係於屋外使用時,使用太陽光光譜的實測值或參照D65光源之文獻值所得之光譜的方法為佳。此外,假定最終製品係於屋內使用時,使用照明的光譜,作為光源光譜使用之方法為佳,以晝光色螢光燈光源或D65光源的光譜為佳。第4圖係表示晝光色螢光燈光的光譜、於第5圖表示D65光源的光譜。 The spectrum of the light source used for calculating ΔS 1 or ΔS 2 can be set in accordance with the use environment of the final product or the like. For example, sunlight, a D65 light source, a fluorescent lamp, etc., and various light sources are mentioned. It is preferred to use a measured value of the solar spectrum or a spectrum obtained by referring to the literature value of the D65 source, assuming that the final product is used outdoors. In addition, it is preferable to use the spectrum of the illumination as the spectrum of the light source, and the spectrum of the fluorescent light source or the D65 source is preferably used when the final product is used indoors. Figure 4 shows the spectrum of the phosphorescent light, and Figure 5 shows the spectrum of the D65 source.
[△V1及△S1的計算] [calculation of △V 1 and △S 1 ]
△V1,係如上述式1所表示,將△R(λ)與C1(λ)在各波長相乘,以380~780nm的波長範圍積分而得。△S1,係如上述式2所示,將△R(λ)與C1(λ)與L(λ)在各波長處相乘,以380~780nm的波長範圍積分而得。再者,亦可如後述的實施例,使用一定波長間隔(例如,每10nm)之值,以區分求積計算△V1及△S1。在於△V2及△S2的計算亦相同。 ΔV 1 is obtained by multiplying ΔR(λ) and C 1 (λ) at each wavelength and integrating the wavelength range of 380 to 780 nm as expressed by the above formula 1. ΔS 1 is obtained by multiplying ΔR(λ) and C 1 (λ) and L(λ) at each wavelength and integrating the wavelength range of 380 to 780 nm as shown in the above formula 2. Further, as in the embodiment described later, the values of a certain wavelength interval (for example, every 10 nm) may be used to calculate the ΔV 1 and ΔS 1 by dividing the product. The calculations for ΔV 2 and ΔS 2 are also the same.
[△V2及△S2的計算] [calculation of △V 2 and △S 2 ]
△V2係如上述式3所示,將△R(λ)與C2(λ)在各波長處相乘,並以可見光區域的下限波長λ1(nm)~上限波長λ2(nm)的波長範圍積分而得。△S2係如上述式4所示,將△R(λ)與C2(λ)與L(λ)在各波長處相乘,並以λ1(nm)~λ2(nm)的波長範圍積分而得。可見光區域的下限波長λ1及上限波長λ2之值,並無特別限定,以λ1=380nm、λ2=780nm為佳。 ΔV 2 is a multiplication of ΔR(λ) and C 2 (λ) at each wavelength as shown in the above formula 3, and is a lower limit wavelength λ 1 (nm) to an upper limit wavelength λ 2 (nm) of the visible light region. The wavelength range is integrated. ΔS 2 is a multiplication of ΔR(λ) and C 2 (λ) and L(λ) at each wavelength as shown in the above formula 4, and has a wavelength of λ 1 (nm) to λ 2 (nm) Scope is derived. The value of the lower limit wavelength λ 1 and the upper limit wavelength λ 2 in the visible light region is not particularly limited, and λ 1 = 380 nm and λ 2 = 780 nm are preferable.
使用於△S1或者△S2的計算的光源光譜L(λ)可任意設定,惟使用強度不同的光源,則計算結果會改變。因此,需要將光源光譜的強度正規化。在於本發明,將C1(λ)與L(λ)在各波長處相乘,並以380~780nm的波長範圍積分時,及、C2(λ)與L(λ)在各波長處相乘,並以λ1(nm)~λ2(nm)的波長範圍積分時的結果進行正規化為10。一般,光源強度的正規化,係亦有僅將光源光譜積分而進行,惟在於本發明,需要考慮人的感度的正規化,由於其橫跨380~780nm(或λ1(nm)~λ2(nm)),故採用上述積分值。此係,JIS Z8701所記載的k值,與以光源光譜×等色度函數的積分值正規化的理由相同。 The calculated light source spectrum L(λ) used for ΔS 1 or ΔS 2 can be arbitrarily set, but the calculation result is changed if light sources having different intensities are used. Therefore, it is necessary to normalize the intensity of the light source spectrum. In the present invention, when C 1 (λ) and L (λ) are multiplied at respective wavelengths and integrated in a wavelength range of 380 to 780 nm, and C 2 (λ) and L (λ) are at respective wavelengths. The result is normalized to 10 when multiplied by a wavelength range of λ 1 (nm) to λ 2 (nm). In general, the normalization of the intensity of the light source is performed by integrating only the spectrum of the light source. However, in the present invention, it is necessary to consider the normalization of the sensitivity of the human being, since it spans 380 to 780 nm (or λ 1 (nm) to λ 2 (nm)), so the above integral value is used. In this system, the k value described in JIS Z8701 is the same as the reason for normalizing the integral value of the chromaticity function of the light source spectrum ×.
於本發明之具有透明電極之基板的評估方法,將如上述所得之△V1、△S1、△V2及△S2之值,分別可用於透明電極圖案的非視認性的指標。為作成透明電極圖案的非視認性高的具有透明電極之基板,△V1、△S1、△V2及△S2之值係低方為佳。具體而言,△V1之值,以240% nm以下為佳,220% nm以下更佳,進一步以200% nm以下為佳。△S1之值,以7.0% nm以下為佳,6.3% nm以下更佳,5.6% nm以下進一步以為佳。△V2之值,係280% nm以下為佳,260% nm以下更佳,進一步以190% nm以下為佳。△S2之值,以9.0% nm以下為佳,7.5% nm以下更佳,進一步以5.7% nm以下為佳。 In the evaluation method of the substrate having the transparent electrode of the present invention, the values of ΔV 1 , ΔS 1 , ΔV 2 and ΔS 2 obtained as described above can be used for the index of non-visibility of the transparent electrode pattern, respectively. In order to form a substrate having a transparent electrode having a non-high visibility which is a transparent electrode pattern, the values of ΔV 1 , ΔS 1 , ΔV 2 and ΔS 2 are preferably low. Specifically, the value of ΔV 1 is preferably 240% nm or less, more preferably 220% nm or less, and further preferably 200% nm or less. The value of ΔS 1 is preferably 7.0% or less, more preferably 6.3% nm or less, and 5.6% nm or less. The value of ΔV 2 is preferably 280% or less, more preferably 260% or less, and further preferably 190% or less. The value of ΔS 2 is preferably 9.0% nm or less, more preferably 7.5% nm or less, and further preferably 5.7% nm or less.
本發明的具有透明電極之基板的評估方法,可組入具有透明電極之基板之製造過程。例如將上述評估,在設定具有透明電極之基板之製造條件時進行,基於評估結果調整製造條件(透明介電質層或透明導電膜層之製膜條件等),決定各種製造條件。此外,藉由在生產線實施上述評估,亦可進行具有透明電極之基板的品質管理。 The evaluation method of the substrate having the transparent electrode of the present invention can be incorporated into the manufacturing process of the substrate having the transparent electrode. For example, the above evaluation is performed when the manufacturing conditions of the substrate having the transparent electrode are set, and the manufacturing conditions (film forming conditions of the transparent dielectric layer or the transparent conductive film layer, etc.) are adjusted based on the evaluation results, and various manufacturing conditions are determined. Further, quality management of the substrate having the transparent electrode can also be performed by performing the above evaluation on the production line.
如此,包含本發明的評估方法之具有透明電極之基板的製造方法,亦係本發明之一。本發明之具有透明電極之基板的製造方法,在組入上述的評估方法以外,與先前的具有透明電極之基板的製造方法相同。 Thus, the method for producing a substrate having a transparent electrode comprising the evaluation method of the present invention is also one of the present inventions. The method for producing a substrate having a transparent electrode of the present invention is the same as the method for producing a substrate having a transparent electrode, except for the above-described evaluation method.
於本發明之具有透明電極之基板的製造方法,判定上述△V1、△S1、△V2及△S2之任一之值是否在既定的範圍內。例如,對透明導電膜層被製膜之後的具有透明電極之基板,進行本發明的評估方法,只要△V1等之值超過既定之值,即表示 透明電極圖案的非視認性不在許容範圍內的意思。 In the method for producing a substrate having a transparent electrode of the present invention, it is determined whether or not the value of any of ΔV 1 , ΔS 1 , ΔV 2 and ΔS 2 is within a predetermined range. For example, the evaluation method of the present invention is performed on a substrate having a transparent electrode after the transparent conductive film layer is formed. As long as the value of ΔV 1 or the like exceeds a predetermined value, the non-authenticity of the transparent electrode pattern is not within the tolerance range. the meaning of.
將上述△V1或△V2之值的判定結果反饋,藉由調整製造條件使該值在既定的範圍內,可提升透明電極被圖案化後的具有透明電極之基板的圖案的非視認性。只要將上述△S1或△S2之值得判定結果反饋於製造條件,則可提高最終製品在使用環境之非視認性。即,藉由將使用於△S1或△S2的計算時之光源光譜L(λ),使用最終製品的使用環境等之光源光譜,或者接近使用環境的光源光譜,可正確地評估最終製品在使用環境之圖案的非視認性。例如,在屋外的使用較多的行動機器,由於在屋外的太陽光下,圖案有較容易被視認的趨勢,使用太陽光光譜的實測值,或模擬太陽光光譜作為L(λ),求△S1或△S2為佳。 The result of the determination of the value of ΔV 1 or ΔV 2 is fed back, and by adjusting the manufacturing conditions so that the value is within a predetermined range, the non-visibility of the pattern of the substrate having the transparent electrode after the transparent electrode is patterned can be improved. . As long as the above-mentioned ΔS 1 or ΔS 2 value determination result is fed back to the manufacturing conditions, the non-visibility of the final product in the use environment can be improved. That is, the final product can be correctly evaluated by using the light source spectrum L(λ) used in the calculation of ΔS 1 or ΔS 2 , using the light source spectrum of the use environment of the final product, or the light source spectrum close to the use environment. The non-visuality of the pattern in the environment of use. For example, in a mobile machine that is used outside the house, the pattern has a tendency to be visually recognized under the sunlight outside the house, and the measured value of the solar spectrum or the simulated solar spectrum is used as L(λ). S 1 or ΔS 2 is preferred.
調整之製造條件,可舉例如,透明介電質層的製膜條件(材質、厚度、氣體流量等)、透明導電膜層的製膜條件(材質、厚度、氣體流量等)等。再者,亦可將2個以上的製造條件同時調整。例如,△V1、△S1等之值較目標值高時,藉由使透明介電質層及透明導電膜層之至少一方的厚度變小,或增加透明介電質層及透明導電膜層之至少一方的製膜時之氧量等,可使該等之值變低。 The manufacturing conditions to be adjusted include, for example, film forming conditions (material, thickness, gas flow rate, etc.) of the transparent dielectric layer, film forming conditions (material, thickness, gas flow rate, etc.) of the transparent conductive film layer. Furthermore, it is also possible to simultaneously adjust two or more manufacturing conditions. For example, when the value of ΔV 1 , ΔS 1 or the like is higher than the target value, the thickness of at least one of the transparent dielectric layer and the transparent conductive film layer is made small, or the transparent dielectric layer and the transparent conductive film are added. The amount of oxygen or the like at the time of film formation of at least one of the layers can lower the value.
此外,藉由將上述判定結果附加於具有透明電極之基板,可進行具有透明電極之基板的品質管理。例如,在於觸控面板的製造步驟,△V1、△S1等之值在目標值以下,藉由選擇使用具有透明電極之基板,可提高最終製品的良率。將判定結果附加於具有透明電極之基板的方法,可將印刷判定結果 的標籤或記錄判定結果的IC晶片等的媒體添附於具有透明電極之基板或者與具有透明電極之基板一起包裝的方法,將判定結果直接列印或印刷於具有透明電極之基板的方法等。判定結果,可以文字、數字、記號、條碼、二維條碼等表示,亦可以該等地組合表示。 Further, by adding the above-described determination result to the substrate having the transparent electrode, quality management of the substrate having the transparent electrode can be performed. For example, in the manufacturing steps of the touch panel, the values of ΔV 1 , ΔS 1 , etc. are below the target value, and by selecting a substrate having a transparent electrode, the yield of the final product can be improved. The method of adding the determination result to the substrate having the transparent electrode, and attaching the label of the print determination result or the medium such as the IC wafer recording the determination result to the substrate having the transparent electrode or the method of packaging the substrate having the transparent electrode, The determination result is directly printed or printed on a substrate having a transparent electrode or the like. The result of the determination may be expressed by a character, a number, a symbol, a bar code, a two-dimensional bar code, or the like, or may be combined and displayed.
反射光譜的測定方法,可舉上述方法。其中,於製膜步驟中以線上測定反射光譜的方法為佳,以於透明介電質層之製膜之後而在透明導電膜層之製膜之前的基板的分光反射率,作為分光反射率RB(λ),以於透明導電膜層之製膜之後的具有透明電極之基板的分光反射率作為分光反射率RA(λ),分別在線上測定的方法更佳。 The method for measuring the reflection spectrum is as described above. Wherein, the method of measuring the reflection spectrum on the line in the film forming step is preferred, and the spectral reflectance of the substrate before the film formation of the transparent conductive film layer after the film formation of the transparent dielectric layer is used as the spectral reflectance R B (λ) is preferably a method of measuring the spectral reflectance of the substrate having a transparent electrode after the formation of the transparent conductive film layer as the spectral reflectance R A (λ), respectively.
關於△V1,以240% nm以下為佳,以220% nm以下更佳,進一步以200% nm以下為佳,關於△S1,以7.0% nm以下為佳,以6.3% nm以下更佳,進一步以5.6% nm以下為佳,關於△V2,以280% nm以下為佳,以260% nm以下更佳,進一步以190% nm以下為佳,關於△S2,以9.0% nm以下為佳,以7.5% nm以下更佳,進一步以5.7% nm以下為佳,分別可作成透明電極圖案的非視認性高的具有透明電極之基板。藉由管理製造條件使之成如此之數值範圍,可製造非視認性良好的具有透明電極之基板。 ΔV 1 is preferably 240% nm or less, more preferably 220% nm or less, further preferably 200% nm or less, and ΔS 1 is preferably 7.0% or less, more preferably 6.3% nm or less. Further, it is preferably 5.6% or less, and ΔV 2 is preferably 280% or less, more preferably 260% or less, further preferably 190% or less, and ΔS 2 is 9.0% or less. Preferably, it is more preferably 7.5% nm or less, further preferably 5.7% nm or less, and each of the substrates having a transparent electrode having a non-high visibility and a transparent electrode can be formed. By managing the manufacturing conditions to such a numerical range, it is possible to manufacture a substrate having a transparent electrode which is not visually identifiable.
再者,根據本發明,不會受到評估者的熟練度等的透明電極圖案視認性的判定差的影響,而可將判定結果反饋於透明導電膜層的製膜步驟,故可早期發現不良,可貢獻在提升生產性。 According to the present invention, the determination result of the transparency of the transparent electrode pattern such as the proficiency of the assessor is not affected, and the determination result can be fed back to the film forming step of the transparent conductive film layer, so that the defect can be detected early. Can contribute to improve productivity.
[具有透明電極之基板的用途] [Use of substrate with transparent electrode]
本發明的具有透明電極之基板,可使用於作為顯示器或發光元件、光電轉換元件等地透明電極,可良好地使用於作為觸控面板用的透明電極。其中,由於透明導電膜層的電阻低,可良好地使用於電容式觸控面板。 The substrate having the transparent electrode of the present invention can be used as a transparent electrode for a display, a light-emitting element, a photoelectric conversion element, or the like, and can be suitably used as a transparent electrode for a touch panel. Among them, since the transparent conductive film layer has low electrical resistance, it can be favorably used for a capacitive touch panel.
在於觸控面板的形成,於具有透明電極之基板上,塗佈導電性墨水或糊料,藉由熱處理,形成作為引導電路用配線之集電極。加熱處理的方法,並無特別限定,可舉以烘箱或IR加熱器等之加熱方法。加熱處理的溫度‧時間,係考慮導電性糊料附著於透明電極之溫度‧時間適宜設定。可舉例如,以烘箱之加熱,則以120~150℃,30~60分鐘,以IR加熱器之加熱,則以150℃,5分鐘等之例。再者,引導電路用配線的形成方法,並分限定於上述,亦可以乾式塗層法形成。此外,藉由微影,形成引導電路用配線,可作配線的細線化。 In the formation of the touch panel, a conductive ink or a paste is applied onto a substrate having a transparent electrode, and a collector which is a wiring for guiding the circuit is formed by heat treatment. The method of the heat treatment is not particularly limited, and examples thereof include a heating method such as an oven or an IR heater. The temperature of the heat treatment is set at a temperature of ‧ time in consideration of the temperature at which the conductive paste adheres to the transparent electrode. For example, in the case of heating in an oven, the heating is performed at 120 to 150 ° C for 30 to 60 minutes, and the heating by the IR heater is 150 ° C for 5 minutes. Further, the method of forming the wiring for the guiding circuit is limited to the above, and may be formed by a dry coating method. Further, the wiring for the guiding circuit is formed by lithography, and the wiring can be thinned.
[實施例] [Examples]
以下,舉實施例更具體說明本發明,惟本發明並非限定於該等實施例。 Hereinafter, the present invention will be specifically described by way of Examples, but the present invention is not limited to the Examples.
[基板的作製] [Manufacture of substrate]
[基板1] [Substrate 1]
作為具有透明電極之基板(A)1,於基材(透明基板)上,依序層積透明介電質層(高折射率層、低折射率層)、透明導電膜層。使用Nb2O5作為高折射率層,以SiO2作為低折射率層、以對氧化銦摻雜氧化錫之ITO作為透明導電膜層。 As the substrate (A) 1 having a transparent electrode, a transparent dielectric layer (a high refractive index layer, a low refractive index layer) and a transparent conductive film layer are sequentially laminated on a substrate (transparent substrate). Nb 2 O 5 was used as the high refractive index layer, SiO 2 was used as the low refractive index layer, and ITO in which tin oxide was doped with indium oxide was used as the transparent conductive film layer.
基材,使用於PET膜(厚度125μm)的兩面形成硬 塗層(尿烷樹脂)之膜,於其上藉由濺鍍,依序將Nb2O5、SiO2、ITO製膜。硬塗層的厚度為5μm、Nb2O5的厚度為8nm、SiO2的厚度為50nm、ITO的厚度為28nm。 The substrate was formed into a film of a hard coat layer (urethane resin) on both surfaces of a PET film (thickness: 125 μm), and a film of Nb 2 O 5 , SiO 2 or ITO was sequentially formed by sputtering. The thickness of the hard coat layer was 5 μm, the thickness of Nb 2 O 5 was 8 nm, the thickness of SiO 2 was 50 nm, and the thickness of ITO was 28 nm.
濺鍍後的ITO為非晶質,故以150℃的烘箱進行30分鐘的退火,進行ITO的結晶化。將如此地所得之具有透明電極之基板作為基板(A)1。 Since the ITO after sputtering was amorphous, it was annealed in an oven at 150 ° C for 30 minutes to crystallize ITO. The substrate having the transparent electrode thus obtained was used as the substrate (A) 1 .
基板(B)1,係將具有透明電極之基板(A)1之透明導電膜層,使用蝕刻液(關東化學製ITO-02)濕式蝕刻而製作。 The substrate (B) 1 was produced by wet etching using an etching liquid (ITO-02 manufactured by Kanto Chemical Co., Ltd.) using a transparent conductive film layer of a substrate (A) 1 having a transparent electrode.
[以目視之非視認性評估] [Visual assessment by visual inspection]
將上述具有透明電極之基板(A)1藉由微影圖案化,製作圖案化樣品1。使用該圖案化樣品1,於晝光色的螢光燈下,將透明電極圖案的非視認性以等級1至等級5的5階段評估。數字越大表示非視認性越佳。圖案化樣品1以目視之非視認性等級為1。 The patterned sample 1 was produced by patterning the substrate (A) 1 having the transparent electrode described above by lithography. Using the patterned sample 1, the non-visibility of the transparent electrode pattern was evaluated in five stages of grades 1 to 5 under a fluorescent light of a neon color. A larger number indicates a better non-visibility. The patterned sample 1 was visually invisible to a grade of 1.
[基板2] [Substrate 2]
使SiO2的厚度為40nm、ITO的厚度為25nm以外,係以與實施例1同樣地,製作具有透明電極之基板(A)2,藉由將透明導電膜層濕式蝕刻,製作基板(B)2及圖案化樣品2。圖案化樣品2,以目視之非視認性等級為2。 A substrate (A) 2 having a transparent electrode was produced in the same manner as in Example 1 except that the thickness of the SiO 2 was 40 nm and the thickness of the ITO was 25 nm. The substrate was formed by wet etching the transparent conductive film layer (B). 2 ) and patterned sample 2. Sample 2 was patterned to a visually non-visible level of 2.
[基板3] [Substrate 3]
使Nb2O5的厚度為7nm、ITO的厚度為26nm以外,以與實施例1同樣地,製作具有透明電極之基板(A)3,藉由將透明導電膜層濕式蝕刻,製作基板(B)3及圖案化樣品3。圖案化樣品3,以目視之非視認性等級為3。 A substrate (A) 3 having a transparent electrode was produced in the same manner as in Example 1 except that the thickness of the Nb 2 O 5 was 7 nm and the thickness of the ITO was 26 nm. The substrate was formed by wet etching the transparent conductive film layer ( B) 3 and patterned sample 3. Sample 3 was patterned to a visually non-visible level of 3.
[基板4] [Substrate 4]
使ITO的厚度為26nm以外,以與實施例1同樣地,製作具有透明電極之基板(A)4,藉由將透明導電膜層濕式蝕刻,製作基板(B)4及圖案化樣品4。圖案化樣品4,以目視之非視認性等級為4。 A substrate (A) 4 having a transparent electrode was produced in the same manner as in Example 1 except that the thickness of the ITO was 26 nm, and the substrate (B) 4 and the patterned sample 4 were produced by wet etching the transparent conductive film layer. Sample 4 was patterned to a visually non-visual level of 4.
[基板5] [Substrate 5]
使Nb2O5的厚度為6nm、SiO2的厚度為34nm、ITO的厚度為10nm以外,以與實施例1同樣地,製作透明電極之基板(A)5,藉由將透明導電膜層濕式蝕刻,製作基板(B)5及圖案化樣品5。圖案化樣品5,以目視之非視認性等級為5。 A substrate (A) 5 of a transparent electrode was produced in the same manner as in Example 1 except that the thickness of Nb 2 O 5 was 6 nm, the thickness of SiO 2 was 34 nm, and the thickness of ITO was 10 nm. The transparent conductive film layer was wet. Etching, substrate (B) 5 and patterned sample 5 were fabricated. Sample 5 was patterned to a visually non-visible level of 5.
[基板6] [Substrate 6]
使Nb2O5的厚度為6nm、SiO2的厚度為30nm、ITO的厚度為10nm以外,以與實施例1同樣地,製作透明電極之基板(A)6,藉由將透明導電膜層濕式蝕刻,製作基板(B)6及圖案化樣品6。圖案化樣品6,以目視之非視認性等級為5。 A substrate (A) 6 of a transparent electrode was produced in the same manner as in Example 1 except that the thickness of Nb 2 O 5 was 6 nm, the thickness of SiO 2 was 30 nm, and the thickness of ITO was 10 nm. The transparent conductive film layer was wet. Etching, substrate (B) 6 and patterned sample 6 were fabricated. The sample 6 was patterned to have a visual non-visibility rating of 5.
[實施例1] [Example 1]
測定在於上述所作製的具有透明電極之基板(A)1~(A)5及基板(B)1~(B)5的反射光譜,根據式1計算△V1。 The reflection spectra of the substrates (A) 1 to (A) 5 and the substrates (B) 1 to (B) 5 having the transparent electrodes prepared above were measured, and ΔV 1 was calculated according to Formula 1 .
[反射光譜測定] [Refracting Spectral Measurement]
反射光譜,係以包括積分球之分光光度計,PERKIN ELMER公司製LAMBDA750,將380nm~780nm的波長範圍,以每間隔10nm的波長測定。測定係以氣溫25℃、濕度40%的室溫環境進行。於反射光譜的測定,將樣品設置成分光的單色光入射製膜面,將穿透的全光線以積分球測定。測定反射光譜 測定時,不進行背面塗黑等的特別的處理,將包含背面反射測定反射率。樣品的固定係藉由按壓接於積分球開口部的部分的外側,以背面接於空氣的狀態測定。 The reflectance spectrum was measured by a spectrophotometer including an integrating sphere, LAMBDA 750 manufactured by PERKIN ELMER Co., Ltd., and a wavelength range of 380 nm to 780 nm, which was measured at a wavelength of 10 nm per interval. The measurement was carried out at room temperature in a temperature of 25 ° C and a humidity of 40%. In the measurement of the reflection spectrum, the sample is set to a monochromatic light of the component light incident on the film formation surface, and the total light that is transmitted is measured by an integrating sphere. Determination of reflectance spectra At the time of measurement, no special treatment such as back blackening was performed, and the reflectance was measured by including back surface reflection. The fixation of the sample was measured by pressing the outside of the portion connected to the opening portion of the integrating sphere and the back surface was connected to the air.
[△V1的計算] [calculation of △V 1 ]
△V1,係式1所示,將△R(λ)與C1(λ)在各波長處相乘,以380~780nm的波長範圍積分所求得。△R(λ)係藉由上述反射光譜測定而得,具有透明電極之基板(A)與基板(B)的反射光譜之差的絕對值。等色度函數係反射光譜,配合測定波長,將380nm~780nm的波長範圍,使用每間隔10nm的波長。在於△S1、△V1及△S2的計算一相同。 ΔV 1 is expressed by the formula 1, and ΔR(λ) and C 1 (λ) are multiplied at respective wavelengths, and are obtained by integrating the wavelength range of 380 to 780 nm. ΔR(λ) is an absolute value of a difference between reflection spectra of the substrate (A) and the substrate (B) having a transparent electrode as measured by the above-described reflection spectrum. The isochromatic function is a reflection spectrum, which is used in conjunction with the measurement wavelength, and a wavelength range of 380 nm to 780 nm is used, and a wavelength of 10 nm per interval is used. The calculations for ΔS 1 , ΔV 1 and ΔS 2 are the same.
將該計算而得之結果示於第6圖。△V1與以目視之非視認性的評估結果顯示良好的相關性,可知△V1係優良的非視認性的評估方法。 The result of this calculation is shown in Fig. 6. ΔV 1 showed a good correlation with the visual evaluation result of non-visibility, and it was found that ΔV1 is an excellent non-visual evaluation method.
[實施例2] [Embodiment 2]
在於實施例1,取代評估函數△V1使用△S1,進行非視認性的評估。於△S1的計算,使用與使用於目視評估之相同光源之晝光色螢光燈光源光譜。 Example 1 in that, instead of using the evaluation function △ V 1 △ S 1, to evaluate the non-visual recognition. For the calculation of ΔS 1 , the spectrum of the neon light source of the same color as that used for visual evaluation was used.
[△S1之計算] [calculation of △S 1 ]
△S1,係式2所示,將△R(λ)、C1(λ)與光源光譜L(λ),在各波長處相乘,以380~780nm的波長範圍積分所求得。在於本實施例,將C1(λ)與L(λ),在各波長處相乘380~780nm的波長範圍積分時的結果進行正規化為10。 ΔS 1 , as shown in the formula 2, ΔR(λ) and C 1 (λ) are multiplied by the light source spectrum L(λ) at each wavelength, and are obtained by integrating the wavelength range of 380 to 780 nm. In the present embodiment, the result of integrating C 1 (λ) and L (λ) at a wavelength range of 380 to 780 nm at each wavelength is normalized to 10.
將該計算而得之結果示於第7圖。△S1與以目視之非視認性的評估結果顯示良好的相關性,可知△S1係優良的非 視認性的評估方法。 The result of this calculation is shown in Fig. 7. ΔS 1 showed a good correlation with the visual evaluation result of non-visibility, and it was found that ΔS 1 is an excellent method for evaluating non-visibility.
[參考例1] [Reference Example 1]
在於實施例2,取代晝光色螢光燈光源光譜,使用D65光源光譜作為光源光譜L(λ),計算△S1。 In Example 2, instead of the spectrum of the source of the neon light fluorescent lamp, ΔS 1 was calculated using the spectrum of the D65 source as the source spectrum L(λ).
將以該計算而得之結果示於第8圖。於第8圖,為作參考,與於晝光色的螢光燈下所評估的非視認性等級比對。去認即使變更光源時,亦可計算△S1。 The results obtained by this calculation are shown in Fig. 8. Figure 8 is for reference and is compared to the non-visibility ratings evaluated under fluorescent light. It is recognized that ΔS 1 can be calculated even when the light source is changed.
[比較例1] [Comparative Example 1]
由實施例1所得之反射光譜,使用CIE(1964)10-deg color matching functions作為等色度函數,D65光源光譜作為光源光譜,計算在於JIS Z8701所記載的L*a*b*表色系之色差△E。將所得結果示於第9圖。△E與以目視之非視認性的評估結果相關性差,以△E無法以充分的精度表示非視認性。 The reflection spectrum obtained in Example 1 was calculated using CIE (1964) 10-deg color matching functions as an isochromatic function, and the D65 source spectrum was used as a source spectrum, and the L*a*b* color system described in JIS Z8701 was calculated. Color difference △E. The results obtained are shown in Fig. 9. ΔE is inferior to the evaluation result of visual non-visibility, and ΔE cannot express non-visibility with sufficient accuracy.
[比較例2] [Comparative Example 2]
藉由實施例1所得之反射光譜,計算下記式5,計算國際公開第2010/114056號(上述專利文獻2)所記載的反射光譜之差的積算值。將所得結果示於第10圖。反射光譜之差之積算值與以目視之非視認性的評估結果相關性差,以反射光譜之差的積算值無法以充分的精度表示非視認性。 From the reflection spectrum obtained in Example 1, the following formula 5 was calculated, and the integrated value of the difference of the reflection spectra described in International Publication No. 2010/114056 (Patent Document 2) was calculated. The results obtained are shown in Fig. 10. The integrated value of the difference between the reflection spectra is inferior to the evaluation result of the visual non-visibility, and the integrated value of the difference of the reflection spectra cannot express the non-visibility with sufficient accuracy.
[比較例3] [Comparative Example 3]
由實施例1所得之反射光譜,計算日本特開2013-84376 號公報(上述專利文獻3)所記載的反射光譜的平均差的絕對值。將所得結果示於第11圖。反射光譜的平均差的絕對值與以目視之非視認性的評估結果相關性差,以反射光譜的平均差的絕對值無法以充分的精度表示非視認性。 From the reflection spectrum obtained in Example 1, calculation of Japanese special open 2013-84376 The absolute value of the average difference of the reflection spectra described in the above-mentioned publication (Patent Document 3). The results obtained are shown in Fig. 11. The absolute value of the average difference of the reflection spectrum is inferior to the evaluation result of the visual non-visibility, and the absolute value of the average difference of the reflection spectrum cannot express the non-visibility with sufficient accuracy.
[比較例4] [Comparative Example 4]
由實施例1所得之反射光譜,計算日本特開2010-76232號公報(上述專利文獻4)所記載的視感反射率之差的絕對值之積分值。將所得結果示於第12圖。視感反射率之差的絕對值之積分值與以目視之非視認性的評估結果相關性差,以視感反射率之差的絕對值之積分值無法以充分的精度表示非視認性。 From the reflection spectrum obtained in the first embodiment, the integral value of the absolute value of the difference in the visual reflectance described in JP-A-2010-76232 (Patent Document 4) is calculated. The results obtained are shown in Fig. 12. The integral value of the absolute value of the difference in the visual reflectance is inferior to the evaluation result of the visual non-visibility, and the integral value of the absolute value of the difference in the visual reflectance cannot express the non-visibility with sufficient accuracy.
將各實施例、參考例及比較例的結果示於第1表。於第1表,亦表示圖案化樣品6(具有透明電極之基板(A)6及基板(B)6)的結果。由第1表可知,相對於△V1及△S1(實施例1及2)與目視評估的順序完全對應,先前的指標(比較例1~4)與目視評估的判定順序有所出入。如此,以先前的指標無法以充分的精度將非視認性數值化。 The results of the respective examples, reference examples, and comparative examples are shown in the first table. The result of patterning sample 6 (substrate (A) 6 and substrate (B) 6 having transparent electrodes) is also shown in the first table. As is clear from the first table, the ΔV 1 and ΔS 1 (Examples 1 and 2) corresponded completely to the order of visual evaluation, and the previous indexes (Comparative Examples 1 to 4) differed from the order of visual evaluation. As such, the non-visuality cannot be quantified with sufficient accuracy with the previous index.
再者,由圖案化樣品5及6的結果,可知藉由使 用△V1及△S1,可將無法以目視評估區別的非視認性的差異數值化。由該結果,可期待藉由使用△V1及△S1,即使是非視認性極佳的具有透明電極之基板,可定量評估透明電極圖案的非視認性。 Further, from the results of patterning the samples 5 and 6, it was found that by using ΔV 1 and ΔS 1 , the difference in non-visibility which cannot be visually evaluated can be quantified. From this result, it is expected that the non-visibility of the transparent electrode pattern can be quantitatively evaluated by using ΔV 1 and ΔS 1 even with a substrate having a transparent electrode which is excellent in non-visibility.
[實施例3~24] [Examples 3 to 24]
在於實施例1,取代評估函數△V1使用△V2,進行非視認性的評估。於實施例3~24,測定具有透明電極之基板(A)1~(A)4及基板(B)1~(B)4的反射光譜。 In Example 1, the evaluation of non-visibility was performed using ΔV 2 instead of the evaluation function ΔV 1 . In Examples 3 to 24, the reflection spectra of the substrates (A) 1 to (A) 4 and the substrates (B) 1 to (B) 4 having transparent electrodes were measured.
[△V2的計算] [calculation of △V 2 ]
△V2,係如式3所示,將△R(λ)與C2(λ),在各波長處相乘,以380~780nm的波長範圍積分所求得。於第2表,表示l、m及n之值。再者,於實施例1,l=m=n=1,即C2(λ)=C1(λ)。 ΔV 2 is obtained by multiplying ΔR(λ) and C 2 (λ) at each wavelength and integrating at a wavelength range of 380 to 780 nm as shown in Formula 3. In the second table, the values of l, m, and n are shown. Further, in Embodiment 1, l = m = n = 1, that is, C 2 (λ) = C 1 (λ).
將該計算而得的結果示於第2表。與△V1同樣地,關於△V2亦可知與目視評估的順序對應。 The result of this calculation is shown in the second table. Similarly to ΔV 1 , it is also known that ΔV 2 corresponds to the order of visual evaluation.
[實施例25~47] [Examples 25 to 47]
在於實施例2,取代評估函數△S1使用△S2,進行非視認性的評估。於△S2的計算,使用與使用於目視評估之相同光源之晝光色螢光燈光源光譜。於實施例25~47,測定具有透明電極之基板(A)1~(A)4及基板(B)1~(B)4的反射光譜。 In Example 2, instead of the evaluation function ΔS 1 , ΔS 2 was used for evaluation of non-visibility. For the calculation of ΔS 2 , the spectrum of the phosphorescent light source source of the same source as that used for visual evaluation was used. In Examples 25 to 47, the reflection spectra of the substrates (A) 1 to (A) 4 and the substrates (B) 1 to (B) 4 having transparent electrodes were measured.
[△S2的計算] [calculation of △S 2 ]
△S2,係如式4所示,將△R(λ)、C2(λ)與光源光譜L(λ), 在各波長處相乘,以380~780nm的波長範圍積分所求得。在於本實施例,將C2(λ)與L(λ),在各波長處相乘380~780nm的波長範圍積分時之結果正規化為10。於第3表,表示l、m及n之值。再者,於實施例2,l=m=n=1,即C2(λ)=C1(λ)。 ΔS 2 is obtained by multiplying ΔR(λ) and C 2 (λ) by the light source spectrum L(λ) at each wavelength and integrating the wavelength range of 380 to 780 nm as shown in Formula 4. In the present embodiment, the result of integrating C 2 (λ) and L (λ) at a wavelength range of 380 to 780 nm at each wavelength is normalized to 10. In the third table, the values of l, m, and n are indicated. Furthermore, in Embodiment 2, l = m = n = 1, that is, C 2 (λ) = C 1 (λ).
將該計算而得結果示於第3表。與△S1同樣地,關於△S2亦可知與目視評估的順序對應。 The result of this calculation is shown in the third table. Similarly to ΔS 1 , it is also known that ΔS 2 corresponds to the order of visual evaluation.
於第2表,表示△V2(實施例3~24)與目視結果(等 級1~4)的相關係數,於第3表,表示△S2(實施例25~47)與目視結果(等級1~4)的相關係數。相關係數,係表示2個變數間的相關的統計學的指標,2個變數(第2表係△V2-等級、第3表係△S2-等級)的共分散,以各個標準偏差商除求得。相關係數越接近-1,表示△V2或△S2與目視評估越吻合的意思。 In the second table, the correlation coefficient between ΔV 2 (Examples 3 to 24) and the visual results (levels 1 to 4) is shown, and in the third table, ΔS 2 (Examples 25 to 47) and visual results (levels) are shown. Correlation coefficient of 1~4). The correlation coefficient is a statistical index indicating the correlation between two variables, and the covariance of two variables (the second table is ΔV 2 -grade, the third ΔS 2 -grade), and the standard deviation is quotient. In addition to seeking. The closer the correlation coefficient is to -1, the more the ΔV 2 or ΔS 2 agrees with the visual evaluation.
第13圖係表示△V2(實施例3~24)之等色度函數C2(λ)之各係數l、m及n之值與目視評估的關係之平面三角座標。第14圖係表示△S2(實施例25~47)之等色度函數C2(λ)之各係數l、m及n之值與目視評估之關係之平面三角座標。第13圖及第14圖,係表示以頂點l為3之0≦1≦3,以頂點m為3之0≦m≦3、頂點n為3之0≦n≦3之三角座標,該座標內的任意點,滿足l+m+n=3的關係。 Fig. 13 is a plan showing a triangular coordinate of the relationship between the values of the respective coefficients l, m, and n of the chrominance function C 2 (λ) of ΔV 2 (Examples 3 to 24) and the visual evaluation. Fig. 14 is a plan showing the triangular coordinates of the relationship between the values of the respective coefficients l, m and n of the chrominance function C 2 (λ) of ΔS 2 (Examples 25 to 47) and the visual evaluation. Fig. 13 and Fig. 14 show the triangular coordinates of 0≦1≦3 with vertex l being 3, 0≦m≦3 with vertex m being 3, and 0≦n≦3 with vertex n being 3, the coordinates Any point within, satisfies the relationship of l+m+n=3.
第13圖及第14圖係表示△V2或△S2與目視結果(等級1~4)的相關係數,相關係數在-1以上-0.99以下者以「○」、較-0.99大-0.97以下者以「◇」、較-0.97大-0.95以下者以「△」、較-0.95大者以「□」表示。 Fig. 13 and Fig. 14 show correlation coefficients between ΔV 2 or ΔS 2 and visual results (levels 1 to 4), and the correlation coefficient is -1 or more and 0.99 or less, and "○" is larger than -0.99. The following are indicated by "◇", those with a value greater than -0.97 -0.95, and "□" for those with a maximum of -0.95.
由第13圖及第14圖,確認到△V2及△S2之任一情形,l、m及n之值接近1時(x(λ)、y(λ)及z(λ)的比例大致相同時)與目視評估的相關佳,x(λ)、y(λ)及z(λ)的比例率至少偏向一方,則與目視評估的相關有變差的傾向。 From Fig. 13 and Fig. 14, it is confirmed that ΔV 2 and ΔS 2 are different , and the ratios of l, m, and n are close to 1 (x(λ), y(λ), and z(λ) When the ratio is approximately the same, the correlation with the visual evaluation is good, and the ratios of x(λ), y(λ), and z(λ) are at least one, and the correlation with the visual evaluation tends to be worse.
此外,確認到相較於△S2,於△V2,l之值較大時(x(λ)的比例高時)與目視評估的相關變差,m及n之值較大時(y(λ)及z(λ)的比例高時)與目視評估的相關有變佳的傾向。 Further, it was confirmed that when ΔV 2 , when the value of ΔV 2 , l is large (when the ratio of x (λ) is high), the correlation with the visual evaluation is deteriorated, and when the values of m and n are large (y When the ratio of (λ) and z(λ) is high, there is a tendency to improve the correlation with the visual evaluation.
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