TWI623052B - Fluid uniform device - Google Patents

Fluid uniform device Download PDF

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TWI623052B
TWI623052B TW105139815A TW105139815A TWI623052B TW I623052 B TWI623052 B TW I623052B TW 105139815 A TW105139815 A TW 105139815A TW 105139815 A TW105139815 A TW 105139815A TW I623052 B TWI623052 B TW I623052B
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Taiwan
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fluid
plasma
sleeve
carrying unit
homogenizing device
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TW105139815A
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Chinese (zh)
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TW201822291A (en
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Wen Chueh Pan
Ming June Lin
Jen Chieh Li
Hsiu Jung Yeh
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Nat Chung Shan Inst Science & Tech
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Abstract

本發明係提供一種流體均佈裝置,係在長管型流體承載單元外套設一可旋轉之套管,利用該套管旋轉塗佈結合基板往復移動之二維方向控制,達到兩軸之線性均勻化所構成之大面積均勻塗佈。 The invention provides a fluid homogenizing device, which is provided with a rotatable sleeve on the outer sleeve of the long tube type fluid carrying unit, and the two-dimensional direction control of the reciprocating movement of the combined substrate is spin-coated by the sleeve to achieve linear uniformity of the two axes. A large area is uniformly coated.

Description

流體均佈裝置 Fluid uniform device

本發明係與薄膜製備技術有關,特別係指一種用於製備大面積均勻薄膜層之流體均佈裝置。 The present invention relates to film preparation techniques, and in particular to a fluid homogenizing apparatus for preparing a large area uniform film layer.

薄膜製備是現代工業的基礎技術,舉凡半導體、面板、太陽能電池其基礎製造均需要精密之薄膜鍍膜之技術。精密且能大量生產之技術是維持競爭力的重要手段,因此大面積化以及均勻性之鍍膜技術就成為相關產業技術競爭之重要標的。 Film preparation is the basic technology of modern industry. The basic manufacturing of semiconductors, panels and solar cells requires sophisticated thin film coating technology. Precision and mass production technology is an important means to maintain competitiveness. Therefore, coating technology with large area and uniformity has become an important target for technical competition in related industries.

對乾式鍍膜中之物理氣相沉積或化學氣相沉積之薄膜製備技術而言,如何大面積化生成均勻性薄膜,均為其關鍵性之技術所在。也就是氣體最終沉積於基板上的分佈,不論是以濺鍍靶材上的分子進行沉積或是以蒸發方式在基板上沉積,或是反應氣體於基板上沉積,都需要以某種方式將沉積物質均勻地散佈於基板上。 For the thin film preparation technology of physical vapor deposition or chemical vapor deposition in dry coating, how to form a uniform film in a large area is a key technology. That is, the distribution of the gas finally deposited on the substrate, whether deposited by molecules on the sputter target or deposited on the substrate by evaporation, or deposition of the reactive gas on the substrate, needs to be deposited in some way. The substance is evenly spread on the substrate.

在鈉玻璃基板上製作銅銦鎵硒硫(CIGSS)薄膜太陽能電池,使用真空濺鍍技術或電鍍技術製作CIG(銅銦鎵)前驅物,結合快速熱處理(Rapid Thermal Processing,RTP)(US 5,578,503)製程-硒/硫化法(Selenization/Sulfurization) 製備CIGSS吸收層(US 8,741,685 B2),具有高品質、速度快且適合大面積生產的優點。2011年Shogo等人於美國專利8,012,546發表一種以電漿解離硒蒸氣進行四元素共蒸鍍之銅銦鎵硒薄膜太陽能電池之方法與設備,當金屬硒原料加熱蒸發後經過一電漿源,可提供額外能量給原本反應活性較低的硒原子團簇(Se2、Se5、Se6、Se7、Se8),解離成具有活性的硒原子,進而增加反應活性。如此形成的銅銦鎵硒薄膜具有大晶粒尺寸及平坦緻密之表面特點,有助於短路電流的提升以及填充因子的增加,使得光電轉換效率提升百分之五。但是由於共蒸鍍製程之設備及作用原理限制,使得此一作法無法達成大面積之均勻性,整個腔體充滿著硒蒸氣,絕大多數的硒蒸氣附著凝結於腔壁,也造成原料使用的浪費。因此可達到大面積均勻性且硒蒸氣侷限性之設備是必須的。本發明之一應用,於此電漿硒化之薄膜製備技術上,可使線性電漿經由轉動之噴嘴套管以及基板之反覆運動,獲得可大面積且均勻化之薄膜製備。 A copper indium gallium selenide (CIGSS) thin film solar cell is fabricated on a soda glass substrate, and a CIG (copper indium gallium) precursor is fabricated by vacuum sputtering or electroplating, in combination with Rapid Thermal Processing (RTP) (US 5, 578, 503) Process - Selenization / Sulfurization The CIGSS absorber layer (US 8,741,685 B2) is prepared with the advantages of high quality, high speed and suitable for large-area production. In 2011, Shogo et al., U.S. Patent No. 8,012,546, discloses a method and a device for a four-element co-evaporation of a copper indium gallium selenide thin film solar cell by plasma dissociation of selenium vapor, which is passed through a plasma source after heating and evaporation of the metal selenium material. Additional energy is supplied to the selenium clusters (Se2, Se5, Se6, Se7, Se8) which are less reactive, and dissociated into active selenium atoms, thereby increasing the reactivity. The copper indium gallium selenide film thus formed has a large grain size and a flat and dense surface characteristic, which contributes to an increase in short-circuit current and an increase in a fill factor, and the photoelectric conversion efficiency is improved by 5%. However, due to the limitation of the equipment and the principle of action of the co-evaporation process, the uniformity of large area cannot be achieved by this method. The entire cavity is filled with selenium vapor, and most of the selenium vapor adheres to the cavity wall, which also causes the use of raw materials. waste. Therefore, equipment that can achieve large area uniformity and limited selenium vapor is necessary. In one application of the present invention, in the plasma preparation technology of plasma selenization, the linear plasma can be moved through the rotating nozzle sleeve and the substrate to obtain a large-area and uniform film preparation.

1984年Shuskus等人於美國專利4,448,633發表一種以電漿氮化處理進行薄膜缺陷鈍化之方法,當基板上的薄膜欲進行氮化處理時,須將整個基板放置於電漿所涵蓋的範圍中。若將此原理應用於氫電漿輔助硒化中,金屬前驅層於一般硒化之低真空狀態下容易受到電漿的轟擊,導致產生粗糙的表面,將影響元件後續製程及光電轉換效率。因此必須 設計一電漿產生腔體與製程反應腔體分離之結構(亦即Remote Plasma System),可產生品質較佳之銅銦硒系列吸收層薄膜。將試片直接置入並使之與輸入氣體之電漿接觸,像這樣的製程反應腔有時稱之為直接電漿製程,與此不同之另一型冷電漿製程一Remote Plasma(亦稱之為down-stream製程)。這兩者不同之處在於原料氣體是否直接被激發成電漿。在直接製程中,所有原料氣體都暴露於電漿中,試片則完全浸置於電漿中。在Remote Plasma中,不是所有反應氣體都在電漿中一次激發,且基材位置遠離電漿區,氣體可同時輸入到放電區和放電區外之反應腔,通常靠近基材位置。這樣安排的好處是可以減少可能反應之項目及改善製程或對製程化學計量的控制。電漿對基材的一些物理效應在Remote reactor中得到減輕,幾乎可以完全免除輻射損傷。本項技術之一發明,係可將線性遠距電漿整合於動態噴嘴之中,既可使線性電漿經由轉動之噴嘴套管以及基板之反覆運動,獲得可大面積且均勻化之薄膜製備,亦可由遠距電漿之產生避免高強度電漿之直接損傷。 A method for film defect passivation by plasma nitridation is disclosed in U.S. Patent No. 4,448,633, the entire disclosure of which is incorporated herein by reference. If this principle is applied to hydrogen plasma assisted selenization, the metal precursor layer is easily bombarded by the plasma under the low vacuum state of general selenization, resulting in a rough surface, which will affect the subsequent process and photoelectric conversion efficiency of the component. Therefore must Designing a structure in which the plasma generating chamber is separated from the process reaction chamber (ie, Remote Plasma System) can produce a copper-indium-selenium-series absorption layer film of better quality. The test piece is placed directly into contact with the plasma of the input gas. A process chamber like this is sometimes called a direct plasma process. Another type of cold plasma process is a Remote Plasma (also known as Remote Plasma). It is a down-stream process). The difference between the two is whether the material gas is directly excited into a plasma. In the direct process, all raw material gases are exposed to the plasma and the test piece is completely immersed in the plasma. In Remote Plasma, not all of the reaction gases are excited once in the plasma, and the substrate is located away from the plasma zone, and the gas can be simultaneously input into the reaction zone outside the discharge zone and the discharge zone, usually near the substrate. The advantage of this arrangement is that it can reduce the number of items that may be reacted and improve the process or control of the process stoichiometry. Some of the physical effects of the plasma on the substrate are alleviated in the Remote reactor, and radiation damage is almost completely eliminated. One of the techniques of the present invention is that a linear long-distance plasma can be integrated into a dynamic nozzle, and the linear plasma can be moved through the rotating nozzle sleeve and the substrate to obtain a large-area and uniform film preparation. It can also avoid the direct damage of high-strength plasma by the generation of long-distance plasma.

為解決先前技術之缺點,本發明係提供一種流體均佈裝置,係在長管型流體承載單元外套設一可旋轉之套管,利用該套管旋轉並結合基板往復移動之二維方向控制,達到兩軸之線性均勻化所構成之大面積均勻薄膜製備之方 法。 In order to solve the shortcomings of the prior art, the present invention provides a fluid homogenizing device, which is provided with a rotatable sleeve on the long tube type fluid carrying unit, and uses the sleeve to rotate and combine the two-dimensional direction control of the reciprocating movement of the substrate. The method of preparing a large-area uniform film composed of linear homogenization of two axes law.

本發明係為一種流體均佈裝置,係包括:一流體承載單元,係為一封閉中空之長管,該長管一端具有至少一流體入口,該長管側壁具有至少一流體出口;一套管,係套裝於該流體承載單元外側,該套管與該流體承載單元具有同軸心,該套管側壁具有至少一流體噴口,該套管係以其軸心為中心進行旋轉運動;以及至少二隔絕轉動滾輪,係設置於該流體承載單元與該套管之間。 The present invention is a fluid homogenizing device comprising: a fluid carrying unit, which is a closed hollow long tube, the long tube has at least one fluid inlet at one end, the long tube side wall has at least one fluid outlet; The sleeve is disposed outside the fluid carrying unit, the sleeve has a concentricity with the fluid carrying unit, the sleeve sidewall has at least one fluid spout, the sleeve is rotated about its axis; and at least two isolated A rotating roller is disposed between the fluid carrying unit and the sleeve.

本發明之一實施例中,該流體係為氣體、液體、液氣混合汽、固液混合、電漿或其他種類之流體。 In one embodiment of the invention, the flow system is a gas, liquid, liquid-gas mixture, solid-liquid mixture, plasma or other type of fluid.

本發明之一實施例中,該流體承載單元係以不鏽鋼或石墨製成。 In one embodiment of the invention, the fluid carrying unit is made of stainless steel or graphite.

本發明之流體均佈裝置可與電漿裂解裝置為一電漿均佈裝置,其係包括:一前述之流體均佈裝置;電漿產生單元,係位於該流體承載單元內部,其係包括高壓電極、介電層與至少二支撐件;該流體承載單元係作為該電漿產生單元之接地電極使用,該接地電極與該介電層間係定義一電漿產生空間,當於該高壓電極及該接地電極之間施加一高電壓,並將一反應氣體通入該電漿產生空間時,反應氣體在該電漿產生空間產生電漿,並使該電漿從該流體出口流至該流體承載單元與該套管間的空間,該套管同時進行旋轉運動,以將該電漿經該流體噴口向外噴出、塗佈在一目標工件示上。 The fluid homogenizing device of the present invention and the plasma cracking device may be a plasma homogenizing device, comprising: a fluid uniform device as described above; a plasma generating unit located inside the fluid carrying unit, the system comprising a high voltage An electrode, a dielectric layer and at least two supporting members; the fluid carrying unit is used as a grounding electrode of the plasma generating unit, and the grounding electrode and the dielectric layer define a plasma generating space, and the high voltage electrode and the When a high voltage is applied between the ground electrodes, and a reactive gas is introduced into the plasma generating space, the reactive gas generates a plasma in the plasma generating space, and the plasma flows from the fluid outlet to the fluid carrying unit. In the space between the sleeve and the sleeve, the sleeve is simultaneously rotated to spray the plasma outward through the fluid orifice and onto a target workpiece.

本發明之一實施例中,該高壓電極係以石墨製成。 In one embodiment of the invention, the high voltage electrode is made of graphite.

本發明之一實施例中,該介電層係以石英製成。 In one embodiment of the invention, the dielectric layer is made of quartz.

本發明之一實施例中,該接地電極(即該流體承載單元)係以石墨製成。 In one embodiment of the invention, the ground electrode (i.e., the fluid carrying unit) is made of graphite.

以上之概述與接下來的詳細說明及附圖,皆是為了能進一步說明本發明達到預定目的所採取的方式、手段及功效。而有關本發明的其他目的及優點,將在後續的說明及圖示中加以闡述。 The above summary, the following detailed description and the accompanying drawings are intended to further illustrate the manner, the Other objects and advantages of the present invention will be described in the following description and drawings.

11‧‧‧流體承載單元 11‧‧‧Fluid bearing unit

111‧‧‧流體入口 111‧‧‧ fluid inlet

112‧‧‧流體出口 112‧‧‧ Fluid outlet

12‧‧‧套管 12‧‧‧ casing

121‧‧‧流體噴口 121‧‧‧ fluid vents

13‧‧‧隔絕轉動滾輪 13‧‧‧Isolated rotating roller

21‧‧‧流體承載單元 21‧‧‧Fluid bearing unit

211‧‧‧流體出口 211‧‧‧ fluid outlet

22‧‧‧套管 22‧‧‧ casing

221‧‧‧流體噴口 221‧‧‧ fluid vents

23‧‧‧隔絕轉動滾輪 23‧‧‧Isolated rotating roller

24‧‧‧電漿產生單元 24‧‧‧Plastic generating unit

241‧‧‧高壓電極 241‧‧‧High voltage electrode

242‧‧‧介電層 242‧‧‧ dielectric layer

243‧‧‧支撐件 243‧‧‧Support

圖1係為本發明之流體均佈裝置結構示意圖。 1 is a schematic view showing the structure of a fluid homogenizing device of the present invention.

圖2係為本發明之流體均佈裝置結構剖面示意圖。 2 is a schematic cross-sectional view showing the structure of the fluid homogenizing device of the present invention.

圖3係為本發明之流體均佈裝置與電漿裂解裝置結合之另一實施例結構圖。 Fig. 3 is a structural view showing another embodiment of the fluid homogenizing device and the plasma cracking device of the present invention.

以下係藉由特定的具體實例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點與功效。 The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure herein.

現有大面積薄膜塗佈技術中,常使用長管式或長條式的氣體均佈裝置、其噴嘴朝下,目標工件(例如玻璃基板)在該噴嘴下方來回往復移動,以在基板表面產生大面積均勻 薄膜,然而實際使用時只靠移動氣體均佈裝置與基板的相對位置,無法確保噴出的原料氣體分佈均勻,因此造成基板上的靶材薄膜厚度不均之情況。本發明為改善現有技術之缺點,使用一可旋轉之套管套設於均佈裝置(即本案的流體承載單元)外側,利用套管旋轉運動提供額外的噴塗方向與範圍控制,藉以更精確的對目標基板進行鍍膜,確保薄膜之厚度均勻,提升製程效率與產品良率。 In the existing large-area film coating technology, a long tube type or a long strip type gas homogenizing device is often used, the nozzle thereof faces downward, and a target workpiece (for example, a glass substrate) reciprocates back and forth under the nozzle to generate a large surface on the substrate. Uniform area In the actual use, the film is only moved by the relative position of the gas homogenizing device and the substrate, and it is impossible to ensure uniform distribution of the material gas to be ejected, thereby causing uneven thickness of the target film on the substrate. In order to improve the shortcomings of the prior art, the present invention uses a rotatable sleeve to be sleeved on the outside of the uniform device (ie, the fluid carrying unit of the present invention), and provides additional spray direction and range control by using the rotary motion of the sleeve, thereby more accurately The target substrate is coated to ensure uniform thickness of the film, improving process efficiency and product yield.

請同時參閱圖1與圖2所示,係為本發明之流體均佈裝置實施例結構示意圖與剖面圖,如圖所示,該流體均佈裝置包括:一流體承載單元11,係為一封閉中空之長管,該長管一端具有至少一流體入口111,該長管側壁具有至少一流體出口112;一套管12,係套裝於該流體承載單元11外側,該套管12與該長管(即該流體承載單元11)具有相同的軸心,該套管12側壁具有至少一流體噴口121,該套管係以其軸心為中心進行旋轉運動;以及至少二隔絕轉動滾輪13,係設置於該流體承載單元11與該套管12之間。本發明於實際應用時,該些流體入口、流體出口、流體噴口、隔絕轉動滾輪等元件之形狀、位置、數量係可依使用者實際需求而定,並不限於本發明內容與圖式所揭露之範圍。 Please refer to FIG. 1 and FIG. 2 simultaneously. FIG. 1 is a schematic structural view and a cross-sectional view of an embodiment of the fluid homogenizing apparatus of the present invention. As shown in the figure, the fluid homogenizing apparatus comprises: a fluid carrying unit 11 which is closed. a hollow long tube having at least one fluid inlet 111 at one end, the long tube side wall having at least one fluid outlet 112; a sleeve 12 disposed outside the fluid carrying unit 11, the sleeve 12 and the long tube (ie, the fluid carrying unit 11) has the same axis, the side wall of the sleeve 12 has at least one fluid nozzle 121, the sleeve rotates about its axis; and at least two isolates the rotating roller 13 Between the fluid carrying unit 11 and the sleeve 12. In the actual application of the present invention, the shape, position and quantity of the fluid inlet, the fluid outlet, the fluid nozzle, the isolated rotating roller and the like may be determined according to actual needs of the user, and are not limited to the contents and drawings disclosed in the present invention. The scope.

本發明之一實施例中,該流體出口係可為一狹縫口,意即一長條型開口,以將該流體承載單元內部之流體均勻送至該套筒與該流體承載單元間的空間。 In an embodiment of the present invention, the fluid outlet may be a slit opening, that is, an elongated opening to uniformly feed the fluid inside the fluid carrying unit to the space between the sleeve and the fluid carrying unit. .

本發明之流體均佈裝置實際操作時,工作流體從該流體入口111流入該流體承載單元11內,再從該流體出口112(此實施例為一狹縫口)流至該套管12與該流體承載單元11之間的空間內;該套管12之兩端或一端係設有旋轉驅動機構(圖未示),用於帶動該套管12以其軸心(與該流體承載單元11相同軸心)進行旋轉運動;該套管12將該流體從該些流體之複數噴口121噴出同時、進行順時或逆時針旋轉,以達到將該流體大面積均勻噴塗於一基板(圖未示)上之目的。本發明之一實施例中,該旋轉驅動機構可對該套管進行精密旋轉速率、方向之控制,以控制該流體均佈裝置之噴塗效果。該旋轉驅動機構與該套管結合之兩端形成氣密之接頭,以避免工作流體洩漏。由於目標基板工件(例如玻璃基板)可以精密的進行往復之運動,藉由基板此一行進方向(X軸),並搭配套筒之旋轉運動將活化之均佈流體於垂直行進方向上(Y軸)均勻分佈散佈於工件(玻璃基板)上。據此,藉由兩軸之線性均勻化所構成之大面積均勻塗佈得以完成。 When the fluid homogenizing device of the present invention is actually operated, the working fluid flows into the fluid carrying unit 11 from the fluid inlet 111, and then flows from the fluid outlet 112 (in this embodiment, a slit port) to the sleeve 12 and the The space between the fluid carrying units 11; the two ends or one end of the sleeve 12 is provided with a rotary driving mechanism (not shown) for driving the sleeve 12 with its axial center (the same as the fluid carrying unit 11) The shaft 12 performs a rotary motion; the sleeve 12 ejects the fluid from the plurality of nozzles 121 of the fluids simultaneously, and rotates clockwise or counterclockwise to uniformly spray the fluid over a large area on a substrate (not shown). The purpose of the above. In an embodiment of the invention, the rotary drive mechanism can control the precision rotation rate and direction of the sleeve to control the spraying effect of the fluid uniform device. The rotating drive mechanism forms a gas-tight joint with the sleeve at both ends to avoid leakage of working fluid. Since the target substrate workpiece (for example, the glass substrate) can be precisely reciprocated, the uniform flow of the fluid in the vertical direction of travel (Y axis) is achieved by the direction of travel (X-axis) of the substrate and the rotational movement of the sleeve. Uniformly distributed on the workpiece (glass substrate). According to this, the large-area uniform coating constituted by the linear homogenization of the two axes is completed.

本發明之一實施例中,該流體入口係可位於該流體承載單元(長管)之其中一端、或兩端,係依使用者之需求而定。 In an embodiment of the invention, the fluid inlet may be located at one or both ends of the fluid carrying unit (long tube), depending on the needs of the user.

本發明之一實施例中,該隔絕轉動滾輪係設置於該套管內靠近兩端(即靠近兩端的旋轉驅動機構)之位置,其係可為一長圓柱體,請參閱圖2,由於該流體出口固定不動,從 該流體出口流出的流體會被限制在該二隔絕轉動滾輪間的區域,而不會外洩到套管其他的位置,以達到限制流體流動區域、避免流體洩漏之效果。該隔絕轉動滾輪之實際位置、數量可依使用者需求而定。該隔絕轉動滾輪同時可確保該流體承載單元與該套管不直接接觸、使該套管旋轉順暢。 In an embodiment of the present invention, the isolated rotating roller is disposed at a position near the two ends of the sleeve (ie, a rotary driving mechanism near the two ends), which may be a long cylinder, as shown in FIG. 2, The fluid outlet is fixed, from The fluid flowing out of the fluid outlet is confined to the area between the two isolated rotating rollers without leaking to other positions of the casing to achieve the effect of restricting the fluid flow area and avoiding fluid leakage. The actual position and quantity of the isolated rotating roller can be determined according to the user's needs. The isolating rotating roller simultaneously ensures that the fluid carrying unit does not directly contact the sleeve, and the sleeve is rotated smoothly.

本發明之流體均佈裝置係可用於CIGS太陽能電池元件製程、半導體元件製程等需要大面積蒸鍍薄膜之情況,然本發明之應用領域並不僅限於此,需要大面積噴佈流體的應用場合,如農業園藝灌溉、噴霧式冷卻系統、噴粒製程等不同技術領域場合,均可將本發明之流體均佈裝置依各領域實際需求稍加改變後,作為大面積流體均勻噴佈之用。 The fluid homogenizing device of the present invention can be used for a CIGS solar cell component process, a semiconductor component process, and the like, which requires a large-area vapor deposition film. However, the application field of the present invention is not limited thereto, and a large-area spray fluid application is required. For example, in the technical field of agricultural horticulture irrigation, spray cooling system, spray granulation process, etc., the fluid homogenizing device of the present invention can be used as a large-area fluid for uniform spraying according to the actual needs of various fields.

本發明之一實施例中,若欲噴佈之工作流體係為電漿,可將本發明之流體均佈裝置與電漿裂解裝置共構結合為一電漿均佈裝置,以電漿裂解靶材後、再以大面積均勻噴佈薄膜於基板上。本發明之流體均佈裝置與電漿裂解裝置結合之另一實施例結構圖如圖3所示,係包括:一流體承載單元21,係為一封閉中空之長管,該長管側壁具有至少一流體出口211;一套管22,係套裝於該流體承載單元21外側,該套管22與該長管(即該流體承載單元21)具有相同的軸心,該套管22側壁具有至少一流體噴口221,該套管係以其軸心為中心進行旋轉運動;至少二隔絕轉動滾輪23,係設置於該流體承載單元21與該套管22之間;電漿產生單元24,係位於該流體承載 單元內部,其係包括高壓電極241、介電層242與支撐件243;其中該流體承載單元係作為該電漿產生單元之接地電極使用,該高壓電極、介電層與接地電極(該流體承載單元)構成一完整的電漿裂解裝置。 In an embodiment of the present invention, if the working flow system to be sprayed is a plasma, the fluid homogenizing device of the present invention and the plasma cracking device may be combined into a plasma homogenizing device to plasma the cracking target. After the material, the film is evenly spread on the substrate in a large area. A structural view of another embodiment of the fluid homogenizing device and the plasma cracking device of the present invention is shown in FIG. 3, comprising: a fluid carrying unit 21, which is a closed hollow long tube, the long tube side wall having at least a fluid outlet 211; a sleeve 22 is disposed outside the fluid carrying unit 21, the sleeve 22 and the long tube (ie, the fluid carrying unit 21) have the same axis, and the side wall of the sleeve 22 has at least one a fluid nozzle 221, the sleeve is rotated about its axis; at least two isolating the rotating roller 23 is disposed between the fluid carrying unit 21 and the sleeve 22; the plasma generating unit 24 is located Fluid bearing Inside the unit, the system includes a high voltage electrode 241, a dielectric layer 242 and a support member 243; wherein the fluid carrying unit is used as a ground electrode of the plasma generating unit, the high voltage electrode, the dielectric layer and the ground electrode (the fluid bearing Unit) constitutes a complete plasma cracker.

本發明一實施例之電漿均佈裝置中,該支撐件係用於讓該接地電極與該介電層間的距離保持固定,因此該接地電極與該介電層間可定義出一電漿產生空間,當於該高壓電極及該接地電極之間施加一高電壓,並將一反應氣體通入該電漿產生空間時,反應氣體在該電漿產生空間產生電漿,並使該電漿從該流體出口流至該流體承載單元與該套管間的空間,該套管同時進行旋轉運動,以將該電漿經該流體噴口向外噴出。其中該反應氣體係為硒或硫以及惰性氣體之混合氣體。 In a plasma homogenizing device according to an embodiment of the present invention, the support member is configured to keep a distance between the ground electrode and the dielectric layer fixed, so that a plasma generating space can be defined between the ground electrode and the dielectric layer. When a high voltage is applied between the high voltage electrode and the ground electrode, and a reactive gas is introduced into the plasma generating space, the reactive gas generates a plasma in the plasma generating space, and the plasma is discharged from the plasma. The fluid outlet flows to a space between the fluid carrying unit and the sleeve, and the sleeve simultaneously performs a rotational movement to eject the plasma outward through the fluid orifice. The reaction gas system is a mixed gas of selenium or sulfur and an inert gas.

本發明一實施例之電漿均佈裝置中,該流體出口係為一狹縫口,當電漿由該電漿產生單元產生、從該流體承載單元之狹縫口流出時,該套管係相對於該流體承載單元轉動,使經由該狹縫口流出之電漿進一步經由該套管之的複數個流體噴口均勻地向外散佈。 In a plasma homogenizing device according to an embodiment of the present invention, the fluid outlet is a slit port, and when the plasma is generated by the plasma generating unit and flows out from the slit of the fluid carrying unit, the casing system Relative to the rotation of the fluid carrying unit, the plasma flowing out through the slit opening is further uniformly spread outward through the plurality of fluid nozzles of the sleeve.

本發明之一實施例中,該電漿均佈裝置係為一介電質放電(Dielectric Barrier Discharge,DBD)模組。 In an embodiment of the invention, the plasma homogenizing device is a Dielectric Barrier Discharge (DBD) module.

本發明之流體均佈裝置與電漿裂解裝置結合之另一實施例中,其電源係由一匹配之電源供應器(圖未示)所供 應。電漿系統中在兩電極間施加一足夠的高電壓,產生一高電場,使存在於反應空間之帶電粒子加速並獲得動能,因此,在圖3之介電層與流體承載單元(即接地電極)間的空間(以該支撐件隔離)產生電漿。由於電子質量極低,速度因此遠大於電場中其他粒子。在此速度差的情況下,粒子間很容易發生非彈性碰撞,並產生高活性的自由基,而能夠促使相關化學反應進行。本發明之一實施例中,從該流體承載單元一側(或兩側)進入之工作流體(反應氣體)在該電漿產生空間內轉換成游離電漿態,再從圖3中流體承載單元(即接地電極)下端之電漿流體出口(可為一狹縫口)往下噴出至該套管與該流體承載單元間之空間,再從該套管之複數流體噴口噴出、進行旋轉鍍膜動作。 In another embodiment of the fluid homogenizing device of the present invention in combination with the plasma cracking device, the power source is supplied by a matching power supply (not shown). should. In the plasma system, a sufficient high voltage is applied between the two electrodes to generate a high electric field, so that the charged particles existing in the reaction space are accelerated and the kinetic energy is obtained. Therefore, the dielectric layer and the fluid carrying unit (ie, the ground electrode) in FIG. The space between the two (isolated by the support) produces plasma. Since the electron mass is extremely low, the speed is therefore much larger than other particles in the electric field. In the case of this speed difference, inelastic collisions easily occur between the particles, and highly active radicals are generated, which can promote the related chemical reaction. In an embodiment of the invention, the working fluid (reaction gas) entering from one side (or both sides) of the fluid carrying unit is converted into a free plasma state in the plasma generating space, and then the fluid carrying unit is shown in FIG. The plasma fluid outlet (which may be a slit port) at the lower end of the ground electrode is sprayed downward to the space between the sleeve and the fluid carrying unit, and then ejected from the plurality of fluid nozzles of the sleeve to perform a spin coating operation. .

藉此,本發明之流體均佈裝置,經由一旋轉套管裝置可以均勻分佈流體於工件上,並獲得均勻之薄膜製備。本發明使用之旋轉套管結構簡單、可靠性高,使用者若有需要、只要加入高精密度的旋轉驅動機構(如電子控制步進馬達),便可精確調控流體均佈的狀態。本發明可應用於各種需要大面積塗佈或噴佈流體的場合,亦可與電漿裂解裝置結合作為電漿均佈裝置使用,具有多種應用領域與高運用彈性。 Thereby, the fluid homogenizing device of the present invention can uniformly distribute the fluid onto the workpiece via a rotary sleeve device and obtain a uniform film preparation. The rotating sleeve used in the invention has the advantages of simple structure and high reliability, and the user can precisely adjust the state of the fluid even if necessary, as long as a high-precision rotary driving mechanism (such as an electronically controlled stepping motor) is added. The invention can be applied to various occasions requiring large-area coating or spraying fluid, and can also be used as a plasma homogenizing device in combination with a plasma cracking device, and has various application fields and high application flexibility.

上述之實施例僅為例示性說明本發明之特點及其功效,而非用於限制本發明之實質技術內容的範圍。任何熟習此技藝之人士均可在不違背本發明之精神及範疇下,對 上述實施例進行修飾與變化。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the features and functions of the present invention, and are not intended to limit the scope of the technical scope of the present invention. Anyone skilled in the art can do so without departing from the spirit and scope of the invention. The above embodiments are modified and changed. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

Claims (7)

一種流體均佈裝置,係包括:一流體承載單元,係為一封閉中空之長管,該長管一端具有至少一流體入口,該長管側壁具有至少一流體出口;一套管,係套裝於該流體承載單元外側,該套管與該流體承載單元具有同軸心,該套管側壁具有至少一流體噴口,該套管係以其軸心為中心進行旋轉運動;以及至少二隔絕轉動滾輪,係設置於該流體承載單元與該套管之間。 A fluid homogenizing device comprising: a fluid carrying unit, which is a closed hollow long tube, the long tube has at least one fluid inlet at one end, the long tube side wall has at least one fluid outlet; Outside the fluid carrying unit, the sleeve has a concentricity with the fluid carrying unit, the sleeve sidewall has at least one fluid nozzle, the sleeve rotates about its axis; and at least two separate rotating rollers Provided between the fluid carrying unit and the sleeve. 如請求項1所述之流體均佈裝置,其中該流體承載單元係以不鏽鋼或石墨製成。 The fluid homogenizing device of claim 1, wherein the fluid carrying unit is made of stainless steel or graphite. 一種電漿均佈裝置,係包括:一如請求項1所述之流體均佈裝置;電漿產生單元,係位於該流體承載單元內部,其係包括高壓電極、介電層與支撐件;其中該流體承載單元係作為該電漿產生單元之接地電極使用,該接地電極與該介電層間係定義一電漿產生空間,當於該高壓電極及該接地電極之間施加一高電壓,並將一反應氣體通入該電漿產生空間時,該反應氣體在該電漿產生空間產生電漿,並使該電漿從該流體出口流至該流體承載單元與該套管間的空間,該套管同時進行旋轉運動,以將該電漿經該流體噴口向外噴出。 A plasma homogenizing device, comprising: the fluid homogenizing device according to claim 1, wherein the plasma generating unit is located inside the fluid carrying unit, and comprises a high voltage electrode, a dielectric layer and a support member; The fluid carrying unit is used as a ground electrode of the plasma generating unit, and the grounding electrode and the dielectric layer define a plasma generating space, and a high voltage is applied between the high voltage electrode and the ground electrode, and When a reactive gas is introduced into the plasma generating space, the reactive gas generates a plasma in the plasma generating space, and the plasma flows from the fluid outlet to a space between the fluid carrying unit and the sleeve, the sleeve The tube is simultaneously rotated to eject the plasma outward through the fluid orifice. 如請求項3所述之電漿均佈裝置,其中該高壓電極係以石墨製成。 The plasma homogenizing device of claim 3, wherein the high voltage electrode is made of graphite. 如請求項3所述之電漿均佈裝置,其中該介電層係以石英製成。 The plasma homogenizing device of claim 3, wherein the dielectric layer is made of quartz. 如請求項3所述之電漿均佈裝置,其中該流體出口係為一狹縫口。 The plasma homogenizing device of claim 3, wherein the fluid outlet is a slit. 如請求項3所述之電漿均佈裝置,其中該反應氣體係為硒或硫以及惰性氣體之混合氣體。 The plasma homogenizing device according to claim 3, wherein the reaction gas system is a mixed gas of selenium or sulfur and an inert gas.
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