TWI621506B - Polishing pad and its manufacturing method - Google Patents

Polishing pad and its manufacturing method Download PDF

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Publication number
TWI621506B
TWI621506B TW104108873A TW104108873A TWI621506B TW I621506 B TWI621506 B TW I621506B TW 104108873 A TW104108873 A TW 104108873A TW 104108873 A TW104108873 A TW 104108873A TW I621506 B TWI621506 B TW I621506B
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Taiwan
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polishing pad
polyurethane resin
resin sheet
polishing
hollow body
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TW104108873A
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Chinese (zh)
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TW201540430A (en
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宮坂博仁
立野哲平
喜樂香枝
松岡立馬
佐伯卓
高木正孝
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日商富士紡控股股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step

Abstract

本發明提供一種減少因研磨加工時的異物而產生的研磨損傷的問題、並且研磨速度或平坦性亦優異的研磨墊及其製造方法。本發明的研磨墊具備具有聚胺基甲酸酯樹脂片的研磨層,所述聚胺基甲酸酯樹脂片包含大致球狀的氣泡,且所述聚胺基甲酸酯樹脂片具有0.10W/(m.k)以下的熱導率,所述聚胺基甲酸酯樹脂片在45℃、初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為1.6Hz、拉伸模式下的損耗彈性模數相對於儲存彈性模數的比例為0.130~0.270的範圍內,且所述聚胺基甲酸酯樹脂片的壓縮彈性模數為60%~100%。 The present invention provides a polishing pad which is excellent in polishing rate and flatness, and a method for producing the same, which is capable of reducing polishing damage caused by foreign matter during polishing processing. The polishing pad of the present invention comprises an abrasive layer having a polyurethane resin sheet, the polyurethane resin sheet comprising substantially spherical bubbles, and the polyurethane resin sheet having 0.10 W. / (m.k) or less, the polyurethane resin sheet at 45 ° C, initial load of 200 g, strain range of 0.1% to 0.5%, measurement frequency of 1.6 Hz, tensile mode The ratio of the loss elastic modulus to the storage elastic modulus is in the range of 0.130 to 0.270, and the compression modulus of the polyurethane resin sheet is 60% to 100%.

Description

研磨墊及其製造方法 Polishing pad and method of manufacturing same

本發明是有關於一種研磨墊及其製造方法。特別是有關於半導體裝置的化學機械研磨(Chemical Mechanical Polishing,CMP)加工用研磨墊及其製造方法。 The present invention relates to a polishing pad and a method of manufacturing the same. In particular, there is a polishing pad for chemical mechanical polishing (CMP) processing of a semiconductor device and a method for producing the same.

對矽、硬碟用玻璃基板、薄型液晶顯示器用母玻璃、半導體晶圓、半導體裝置等的材料的表面要求平坦性,因此進行使用研磨墊的游離研磨粒方式的研磨。游離研磨粒方式是一邊在研磨墊與被研磨物之間供給包含研磨粒的漿料(研磨液),一邊對被研磨物的加工面進行研磨加工的方法。 The surface of the material such as the glass substrate for a crucible, a hard disk, a mother glass for a thin liquid crystal display, a semiconductor wafer, or a semiconductor device is required to be flat. Therefore, the polishing is performed by a free abrasive grain using a polishing pad. The free abrasive grain method is a method of polishing a processed surface of a workpiece while supplying a slurry (polishing liquid) containing abrasive grains between the polishing pad and the workpiece.

在半導體裝置用研磨墊中,對其研磨墊表面要求:用以保持研磨粒的開孔、維持半導體裝置表面的平坦性的硬性、以及防止半導體裝置表面的刮痕的彈性。作為可滿足所述要求的研磨墊,利用具有由胺基甲酸酯樹脂發泡體製造的研磨層的研磨墊。 In the polishing pad for a semiconductor device, the surface of the polishing pad is required to maintain the opening of the abrasive grains, to maintain the flatness of the surface of the semiconductor device, and to prevent the scratch of the surface of the semiconductor device. As a polishing pad which satisfies the above requirements, a polishing pad having a polishing layer made of a urethane resin foam is used.

胺基甲酸酯樹脂發泡體通常藉由包含含有聚胺基甲酸酯鍵的異氰酸酯化合物的預聚物與硬化劑的反應而硬化而成形(乾式法)。並且,藉由將所述發泡體切成片狀而形成研磨墊。如此藉由乾式法成形的具有硬質研磨層的研磨墊(以下有時簡稱為 硬質(乾式)研磨墊),在胺基甲酸酯樹脂硬化成形時在發泡體內部形成相對較小的大致球狀的氣泡,因此在藉由切片而形成的研磨墊的研磨表面形成開孔(開口),所述開孔(開口)在研磨加工時可保持漿料。 The urethane resin foam is usually formed by curing by a reaction of a prepolymer containing an isocyanate compound containing a polyurethane bond with a curing agent (dry method). Further, a polishing pad is formed by cutting the foam into a sheet shape. Such a polishing pad having a hard abrasive layer formed by a dry method (hereinafter sometimes referred to simply as A hard (dry) polishing pad) forms a relatively small substantially spherical bubble inside the foam when the urethane resin is hardened, so that an opening is formed in the polished surface of the polishing pad formed by slicing (Opening), the opening (opening) can maintain the slurry during the grinding process.

作為包含胺基甲酸酯樹脂發泡體的研磨墊,例如已知有IC1000(註冊商標、霓塔哈斯(Nitta Haas)公司製造)等研磨墊。 另外,亦已知使用相對於因研磨熱引起的溫度上升而物性變動少的樹脂的研磨墊(專利文獻1)。而且,亦已知藉由熱導率高的樹脂基質,而在平板側散熱的研磨墊(專利文獻2)。 As a polishing pad containing a urethane resin foam, for example, a polishing pad such as IC1000 (registered trademark, manufactured by Nitta Haas Co., Ltd.) is known. In addition, a polishing pad using a resin having little change in physical properties due to temperature rise due to polishing heat is known (Patent Document 1). Further, a polishing pad which dissipates heat on the flat plate side by a resin matrix having a high thermal conductivity is also known (Patent Document 2).

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利第4615813號公報 [Patent Document 1] Japanese Patent No. 4615813

[專利文獻2]日本專利特開2003-297784號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-297784

然而,先前的包含胺基甲酸酯樹脂發泡體的研磨墊通常硬度大,難以防止因在對被研磨物進行研磨加工時局部所產生的異物(研磨屑或研磨粒的凝聚物等)引起的研磨損傷。另一方面,若為了減少研磨損傷的問題而減小硬度,則存在以下問題:整個研磨墊軟質化,研磨速度變小,被研磨物的平坦性差(其結果是在對鍍銅等金屬的膜進行CMP處理時產生大的凹陷)。 However, the conventional polishing pad containing a urethane resin foam generally has a large hardness, and it is difficult to prevent foreign matter (grinding debris, aggregates of abrasive grains, etc.) which are locally generated when the workpiece is polished. Grinding damage. On the other hand, if the hardness is reduced in order to reduce the problem of polishing damage, there is a problem that the entire polishing pad is softened, the polishing rate is small, and the flatness of the object to be polished is poor (the result is a film of a metal such as copper plating). A large depression occurs when the CMP process is performed).

本發明鑒於所述問題而成,目的是提供一種改善因在研 磨加工時局部產生異物而引起的研磨損傷的問題,並且研磨速度大,平坦性優異(特別是可減少凹陷)的研磨墊及其製造方法。 The present invention has been made in view of the above problems, and aims to provide an improvement in research A polishing pad having a problem of polishing damage caused by local foreign matter during grinding, and having a high polishing rate and excellent flatness (especially, a recess can be reduced) and a method for producing the same.

為了解決所述課題,本發明採用以下的構成。 In order to solve the above problems, the present invention adopts the following configuration.

<1>一種研磨墊,其具備具有聚胺基甲酸酯樹脂片的研磨層,所述聚胺基甲酸酯樹脂片包含大致球狀的氣泡,且所述聚胺基甲酸酯樹脂片具有0.10W/(m.k)以下的熱導率,所述聚胺基甲酸酯樹脂片在45℃、初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為1.6Hz、拉伸模式下的損耗彈性模數相對於儲存彈性模數的比例為0.130~0.270的範圍內,且所述聚胺基甲酸酯樹脂片的壓縮彈性模數為60%~100%。 <1> A polishing pad comprising an abrasive layer having a polyurethane resin sheet, the polyurethane resin sheet comprising substantially spherical bubbles, and the polyurethane resin sheet It has a thermal conductivity of 0.10 W/(m.k) or less, and the polyurethane resin sheet has an initial load of 200 g at 45 ° C, a strain range of 0.1% to 0.5%, a measurement frequency of 1.6 Hz, and a pull. The ratio of the loss elastic modulus to the storage elastic modulus in the stretch mode is in the range of 0.130 to 0.270, and the compression modulus of the polyurethane resin sheet is 60% to 100%.

<2>如<1>所述之研磨墊,其中所述聚胺基甲酸酯樹脂片包含平均粒徑為70μm~150μm的第1中空體、與平均粒徑為5μm~60μm的第2中空體。 The polishing pad according to the above aspect, wherein the polyurethane resin sheet comprises a first hollow body having an average particle diameter of from 70 μm to 150 μm and a second hollow having an average particle diameter of from 5 μm to 60 μm. body.

<3>如<1>或<2>所述之研磨墊,其中以5:95~80:20的質量比包含所述第1中空體與所述第2中空體。 <3> The polishing pad according to <1>, wherein the first hollow body and the second hollow body are contained in a mass ratio of 5:95 to 80:20.

<4>如<1>至<3>中任一項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片的氣泡率為20%~60%。 The polishing pad according to any one of <1> to <3> wherein the polyurethane resin sheet has a bubble ratio of 20% to 60%.

<5>如<1>至<4>中任一項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片的密度為0.50g/cm3~0.80g/cm3The polishing pad according to any one of <1> to <4> wherein the polyurethane resin sheet has a density of 0.50 g/cm 3 to 0.80 g/cm 3 .

<6>如<1>至<5>中任一項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片的D硬度為20度~70度。 The polishing pad according to any one of <1> to <5> wherein the polyurethane resin sheet has a D hardness of 20 to 70 degrees.

<7>如<1>至<6>中任一項所述之研磨墊,其中作為構成所述聚胺基甲酸酯樹脂片的胺基甲酸酯樹脂的多元醇成分,包含數量平均分子量為500~950的聚四亞甲基二醇。 The polishing pad according to any one of <1> to <6> wherein the polyol component as the urethane resin constituting the polyurethane resin sheet contains a number average molecular weight. It is a polytetramethylene glycol of 500 to 950.

<8>一種研磨墊的製造方法,其用於製造如<1>至<7>中任一項所述之研磨墊,所述製造方法包括如下步驟:至少將作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)、硬化劑(D)、平均粒徑為80μm~150μm的第1中空體、平均粒徑為5μm~60μm的第2中空體混合,而獲得成形體成形用混合液;及由所述成形體成形用混合液將聚胺基甲酸酯樹脂成形體成形,而獲得聚胺基甲酸酯樹脂片。 <8> A method of producing a polishing pad according to any one of <1> to <7>, wherein the manufacturing method comprises the steps of: at least a polyamine as a prepolymer The isocyanate-bonded isocyanate compound (A), the curing agent (D), the first hollow body having an average particle diameter of 80 μm to 150 μm, and the second hollow body having an average particle diameter of 5 μm to 60 μm are mixed to obtain a molded body. The polyurethane resin molded article is molded from the mixed solution for molding the molded body to obtain a polyurethane resin sheet.

<9>如<8>所述之研磨墊的製造方法,其中以5:95~80:20的質量比包含所述第1中空體與所述第2中空體。 <9> The method for producing a polishing pad according to <8>, wherein the first hollow body and the second hollow body are included in a mass ratio of 5:95 to 80:20.

<10>如<8>或<9>所述之研磨墊的製造方法,其中所述硬化劑(D)包含選自由多胺化合物(D-1)及多元醇化合物(D-2)所組成的組群的至少1種,且以所述聚胺基甲酸酯樹脂片的存在於硬化劑(D)中的活性氫基相對於作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)末端所存在的異氰酸酯基之當量比即r值成為0.75~1.30的方式,將各成分混合。 The method for producing a polishing pad according to the above aspect, wherein the hardener (D) comprises a compound selected from the group consisting of a polyamine compound (D-1) and a polyol compound (D-2). At least one of the groups, and the active hydrogen group present in the hardener (D) of the polyurethane resin sheet relative to the isocyanate containing a polyurethane bond as a prepolymer The equivalent ratio of the isocyanate groups present at the terminal of the compound (A), that is, the r value is 0.75 to 1.30, and the components are mixed.

<11>如<8>至<10>中任一項所述之研磨墊的製造方法,其中進一步包括如下步驟:使聚異氰酸酯化合物(B)與多元醇化合物(C)反應,而獲得作為預聚物的所述含有聚胺基甲酸酯 鍵的異氰酸酯化合物(A),且所述多元醇化合物(C)包含數量平均分子量為500~950的聚四亞甲基二醇。 The method for producing a polishing pad according to any one of the above aspects, further comprising the step of reacting the polyisocyanate compound (B) with the polyol compound (C) to obtain a pretreatment Said polyurethane-containing polymer The isocyanate compound (A) which is a bond, and the polyol compound (C) contains a polytetramethylene glycol having a number average molecular weight of 500 to 950.

本發明的研磨墊可使研磨加工時所產生的熱集中在研磨面附近,因此研磨表面容易軟質化。因此,可改善因在研磨加工時局部產生的異物引起的研磨損傷的問題。另外,可提高研磨速度。而且,整個研磨墊可維持一定的硬度,因此可確保一定的平坦性,並可減少凹陷。 Since the polishing pad of the present invention can concentrate the heat generated during the polishing process in the vicinity of the polishing surface, the polishing surface is easily softened. Therefore, the problem of polishing damage due to foreign matter locally generated during the grinding process can be improved. In addition, the polishing rate can be increased. Moreover, the entire polishing pad can maintain a certain hardness, thereby ensuring a certain flatness and reducing the depression.

以下,對用以實施本發明的形態進行說明。 Hereinafter, embodiments for carrying out the invention will be described.

<<研磨墊>> <<Grinding pad>>

本發明的研磨墊具備具有聚胺基甲酸酯樹脂片的研磨層,所述聚胺基甲酸酯樹脂片包含大致球狀的氣泡,且所述研磨墊的特徵在於:所述聚胺基甲酸酯樹脂片具有0.10W/(m.k)以下的熱導率,所述聚胺基甲酸酯樹脂片在45℃、初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為1.6Hz、拉伸模式下的損耗彈性模數相對於儲存彈性模數的比例為0.130~0.270的範圍內,且所述聚胺基甲酸酯樹脂片的壓縮彈性模數為60%~100%。 The polishing pad of the present invention comprises an abrasive layer having a polyurethane resin sheet, the polyurethane resin sheet comprising substantially spherical bubbles, and the polishing pad is characterized in that the polyamine group The formate resin sheet has a thermal conductivity of 0.10 W/(m.k) or less, the polyurethane resin sheet has an initial load of 200 g at 45 ° C, a strain range of 0.1% to 0.5%, and a measurement frequency. The ratio of the loss elastic modulus to the storage elastic modulus in the tensile mode is 1.630 to 0.270, and the compression modulus of the polyurethane resin sheet is 60% to 100. %.

所述聚胺基甲酸酯樹脂片是指在分子內具有至少2個以 上胺基甲酸酯鍵的片狀樹脂。所述聚胺基甲酸酯樹脂片較佳為在分子內具有至少2個以上胺基甲酸酯鍵與至少2個以上脲鍵。本發明的聚胺基甲酸酯樹脂片及包含所述樹脂片的研磨墊例如可根據後述本發明的製造方法而製造。 The polyurethane resin sheet means having at least 2 in the molecule A flaky resin having a urethane bond. The polyurethane resin sheet preferably has at least two or more urethane bonds and at least two or more urea bonds in the molecule. The polyurethane resin sheet of the present invention and the polishing pad containing the resin sheet can be produced, for example, according to the production method of the present invention to be described later.

另外,所謂大致球狀,是表示存在於藉由乾式法成形的成形體中的通常的氣泡形狀(存在各向同性,是球狀、橢圓狀、或與所述形狀接近的形狀)的概念,與藉由濕式法成形的成形體所含的氣泡形狀(存在各向異性,具有直徑自研磨墊的研磨層表面向底部變大的結構)明確地區別。 In addition, the substantially spherical shape is a concept of a normal bubble shape (a shape that is isotropic, a spherical shape, an elliptical shape, or a shape close to the shape) existing in a molded body formed by a dry method. The shape of the bubble contained in the molded body formed by the wet method (the structure having anisotropy and having a diameter from the surface of the polishing layer to the bottom of the polishing pad) is clearly distinguished.

(熱導率(W/(m.k))) (thermal conductivity (W/(m.k)))

在本說明書及申請專利範圍中,所謂熱導率,是指熱自研磨 表面向研磨墊內部傳遞的容易性。 In the scope of this specification and the patent application, the so-called thermal conductivity refers to thermal self-grinding. The ease with which the surface is transferred to the inside of the polishing pad.

熱導率的測定例如可藉由B型精密迅速熱物性測定裝置(加多技術(KATO TECH)(股)製造:THERMO LABO II.KES-F7)進行測定。 The measurement of the thermal conductivity can be carried out, for example, by a B-type precision rapid thermal property measuring device (manufactured by KATO TECH Co., Ltd.: THERMO LABO II. KES-F7).

本發明的研磨墊中的聚胺基甲酸酯樹脂片的熱導率為0.10W/(m.k)以下,較佳為0.085W/(m.k)~0.098W/(m.k),更佳為0.095W/(m.k)~0.097W/(m.k)。 The polyurethane resin sheet in the polishing pad of the present invention has a thermal conductivity of 0.10 W/(m.k) or less, preferably 0.085 W/(m.k) to 0.098 W/(m.k). More preferably, it is 0.095 W/(m.k) to 0.097 W/(m.k).

若熱導率為所述範圍內,則在研磨加工時所產生的熱難以自研磨表面傳遞至研磨墊內部,因此容易使熱集中在研磨表面。其結果是研磨表面軟質化,即便在研磨加工時局部產生異物,亦可難以產生研磨損傷。 When the thermal conductivity is within the above range, heat generated during the polishing process is hard to be transmitted from the polishing surface to the inside of the polishing pad, so that it is easy to concentrate heat on the polishing surface. As a result, the polishing surface is softened, and even if foreign matter is locally generated during the polishing process, it is difficult to cause polishing damage.

(tanδ) (tan δ)

在本說明書及申請專利範圍中,所謂tanδ,是損耗彈性模數相對於儲存彈性模數的比例,是表示在某溫度條件下的黏性的程度的指標。所謂儲存彈性模數,是對發泡體施加呈正弦性變化的應力時的每1週期所儲存並完全恢復的能量的尺度。另一方面,所謂損耗彈性模數,是指自施加特性頻率的正弦波的應變時的應變僅進行π/2相位的應力成分的大小。 In the present specification and the patent application, tan δ is a ratio of the loss elastic modulus to the storage elastic modulus, and is an index indicating the degree of viscosity under a certain temperature condition. The storage elastic modulus is a measure of the energy stored and completely recovered every one cycle when a stress that changes sinusoidally is applied to the foam. On the other hand, the loss elastic modulus refers to the magnitude of the stress component in which the strain at the strain of the sine wave of the applied characteristic frequency is only π/2 phase.

在本說明書及申請專利範圍中,儲存彈性模數及損耗彈性模數分別是依據JIS K7244-4,在45℃、初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為1.6Hz(10rad/sec)、拉伸模式下的儲存彈性模數及損耗彈性模數。將被研磨物研磨時的研磨墊的表面溫度通常為40℃~50℃,因此藉由測定45℃的tanδ,而可把握在研磨條件下的墊表面溫度下的墊的表面狀態(墊表面的黏性的程度)。 In the scope of this specification and the patent application, the storage elastic modulus and the loss elastic modulus are respectively according to JIS K7244-4, at 45 ° C, the initial load is 200 g, the strain range is 0.1% to 0.5%, and the measurement frequency is 1.6 Hz ( 10 rad/sec), storage elastic modulus and loss elastic modulus in tensile mode. When the surface temperature of the polishing pad when the object to be polished is polished is usually 40 ° C to 50 ° C, the surface state of the pad under the surface temperature of the pad under the polishing condition can be grasped by measuring the tan δ at 45 ° C (the surface of the pad) The degree of stickiness).

本發明的研磨墊中,構成研磨墊的聚胺基甲酸酯樹脂成形體在45℃、初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為1.6Hz、拉伸模式下的損耗彈性模數相對於儲存彈性模數的比例(tanδ)(損耗彈性模數/儲存彈性模數)為0.130~0.270,較佳為0.130~0.160,更佳為0.135~0.150。 In the polishing pad of the present invention, the polyurethane resin molded body constituting the polishing pad has an initial load of 200 g at 45 ° C, a strain range of 0.1% to 0.5%, a measurement frequency of 1.6 Hz, and a loss in a tensile mode. The ratio (tan δ) (loss elastic modulus/storage elastic modulus) of the elastic modulus to the storage elastic modulus is 0.130 to 0.270, preferably 0.130 to 0.160, more preferably 0.135 to 0.150.

若tanδ為所述範圍內,則具有適度延遲性彈性,可抑制對工件的凹凸的過度的擠壓及過度的追隨,因此難以產生研磨損傷,研磨速度亦提高。而且亦容易提高平坦性。 When tan δ is in the above range, it has moderate retardation elasticity, and excessive extrusion and excessive follow-up of the unevenness of the workpiece can be suppressed, so that polishing damage is less likely to occur, and the polishing rate is also improved. Moreover, it is also easy to improve the flatness.

(壓縮彈性模數) (compression elastic modulus)

在本說明書及申請專利範圍中,所謂壓縮彈性模數,是研磨墊的對壓縮變形的恢復容易性的指標。 In the scope of the present specification and the patent application, the compression elastic modulus is an index of the ease of recovery of the compression deformation of the polishing pad.

壓縮彈性模數可根據日本工業標準(JIS L 1021),使用肖伯(Schopper)型厚度測定器(加壓面:直徑為1cm的圓形)而求出。具體而言如以下所述。 The compression elastic modulus can be obtained by using a Schopper type thickness measuring device (pressing surface: a circular shape having a diameter of 1 cm) according to Japanese Industrial Standards (JIS L 1021). Specifically, it is as follows.

測定自無負荷狀態施加30秒鐘的初始負荷後的厚度t0,繼而測定自厚度t0的狀態施加30秒鐘的最終負荷後的厚度t1。繼而,自厚度t1的狀態除去全部的負荷,並放置5分鐘(設為無負荷狀態)後,再次測定施加30秒鐘初始負荷後的厚度t0'。壓縮彈性模數可藉由壓縮彈性模數(%)=100×(t0'-t1)/(t0-t1)的式而算出(另外,初始負荷為300g/cm2、最終負荷為1800g/cm2)。 Since no-load state measured thickness after the initial load is applied 30 seconds t 0, then the state was measured from the thickness t 0 of the thickness of the final load is applied for 30 seconds t 1. Then, the entire load was removed from the state of the thickness t 1 and left for 5 minutes (in the no-load state), and the thickness t 0 ' after the initial load of 30 seconds was measured again. The compression elastic modulus can be calculated by a formula of a compression elastic modulus (%) = 100 × (t 0 '-t 1 ) / (t 0 - t 1 ) (in addition, an initial load of 300 g/cm 2 , final load) It is 1800 g/cm 2 ).

本發明的研磨墊中,聚胺基甲酸酯樹脂片的壓縮彈性模數(%)為60%~100%,較佳為65%~85%,更佳為65%~80%。 In the polishing pad of the present invention, the polyurethane elastic resin sheet has a compression elastic modulus (%) of 60% to 100%, preferably 65% to 85%, more preferably 65% to 80%.

若壓縮彈性模數為所述範圍內,則整個研磨墊具有適度的彈性,難以堵塞,並且平坦性提高。 When the compression elastic modulus is within the above range, the entire polishing pad has moderate elasticity, is difficult to clog, and has improved flatness.

(第1中空體及第2中空體) (first hollow body and second hollow body)

在本說明書及申請專利範圍中,所謂中空體,是指具有空隙的微小球體。 In the scope of the present specification and the patent application, the term "hollow body" means a microsphere having a void.

本發明的研磨墊中,所述聚胺基甲酸酯樹脂片較佳為包含:平均粒徑為70μm~150μm的第1中空體、與平均粒徑為5μm~60μm的第2中空體。第1中空體的平均粒徑更佳為80μm~140 μm,尤佳為90μm~130μm,特佳為90μm~110μm。第2中空體的平均粒徑更佳為8μm~55μm,尤佳為10μm~50μm,特佳為10μm~30μm。 In the polishing pad of the present invention, the polyurethane resin sheet preferably comprises a first hollow body having an average particle diameter of 70 μm to 150 μm and a second hollow body having an average particle diameter of 5 μm to 60 μm. The average particle diameter of the first hollow body is more preferably 80 μm to 140 Μm, particularly preferably from 90 μm to 130 μm, particularly preferably from 90 μm to 110 μm. The average particle diameter of the second hollow body is more preferably from 8 μm to 55 μm, still more preferably from 10 μm to 50 μm, particularly preferably from 10 μm to 30 μm.

藉由包含第1中空體與第2中空體,而可效率佳地降低聚胺基甲酸酯樹脂片的熱導率。因此,在研磨加工時所產生的熱集中在研磨表面附近,使研磨表面附近軟質化,因此即便在研磨加工時局部產生異物,亦可難以產生研磨損傷。 By including the first hollow body and the second hollow body, the thermal conductivity of the polyurethane resin sheet can be efficiently reduced. Therefore, the heat generated during the polishing process is concentrated in the vicinity of the polishing surface, and the vicinity of the polishing surface is softened. Therefore, even if foreign matter is locally generated during the polishing process, it is difficult to cause polishing damage.

所述第1中空體與所述第2中空體的質量比較佳為5:95~80:20,更佳為10:90~70:30,尤佳為20:80~60:40,進而尤佳為30:70~60:40,特佳為40:60~60:40,最佳為50:50~50:50。 Preferably, the mass of the first hollow body and the second hollow body is 5:95 to 80:20, more preferably 10:90 to 70:30, and particularly preferably 20:80 to 60:40, and further Good for 30:70~60:40, especially good for 40:60~60:40, best for 50:50~50:50.

藉由第1中空體與第2中空體的質量比為所述範圍內,而可確保漿料的保持量,並謀求研磨速度的提高。另外,亦難以產生研磨損傷。 When the mass ratio of the first hollow body to the second hollow body is within the above range, the amount of slurry held can be secured, and the polishing rate can be improved. In addition, it is also difficult to cause abrasive damage.

(氣泡率) (bubble rate)

在本說明書及申請專利範圍中,所謂氣泡率,是指研磨墊中的空隙率。氣泡率可根據所得的聚胺基甲酸酯樹脂片的密度與聚胺基甲酸酯樹脂的密度進行測定。 In the scope of the present specification and the patent application, the bubble ratio refers to the void ratio in the polishing pad. The bubble ratio can be measured in accordance with the density of the obtained polyurethane resin sheet and the density of the polyurethane resin.

本發明的研磨墊中,聚胺基甲酸酯樹脂片的氣泡率較佳為20%~60%,更佳為30%~50%,尤佳為40%~50%。 In the polishing pad of the present invention, the cell ratio of the polyurethane resin sheet is preferably from 20% to 60%, more preferably from 30% to 50%, particularly preferably from 40% to 50%.

若氣泡率為所述範圍內,則在研磨面開口的中空體的空隙部分會平穩地進行漿料的積存及供給。 When the bubble ratio is within the above range, the slurry is smoothly accumulated and supplied to the void portion of the hollow body opened on the polishing surface.

(密度) (density)

所述聚胺基甲酸酯樹脂片的密度(體積密度)較佳為0.50g/cm3~0.80g/cm3,更佳為0.55g/cm3~0.75g/cm3,尤佳為0.60g/cm3~0.70g/cm3。若密度為所述範圍內,則亦難以產生因由於研磨劑或被研磨物的加工屑等而研磨層表面堵塞引起的損傷。 The density (bulk density) of the polyurethane resin sheet is preferably from 0.50 g/cm 3 to 0.80 g/cm 3 , more preferably from 0.55 g/cm 3 to 0.75 g/cm 3 , and particularly preferably 0.60. g/cm 3 ~0.70g/cm 3 . When the density is within the above range, it is also difficult to cause damage due to clogging of the surface of the polishing layer due to processing of the abrasive or the workpiece of the object to be polished.

(D硬度) (D hardness)

在本說明書及申請專利範圍中,所謂D硬度,是指依據JIS K7311而測定的值。 In the present specification and the patent application, the D hardness refers to a value measured in accordance with JIS K7311.

所述聚胺基甲酸酯樹脂片的D硬度較佳為70度以下,更佳為20度~60度,尤佳為35度~45度。 The D hardness of the polyurethane resin sheet is preferably 70 degrees or less, more preferably 20 degrees to 60 degrees, and particularly preferably 35 degrees to 45 degrees.

若D硬度為所述範圍內,則研磨墊具有適度的彈性,因此平坦化性能提高,並可減少刮痕的產生。 If the D hardness is within the above range, the polishing pad has moderate elasticity, so the planarization performance is improved, and the generation of scratches can be reduced.

(壓縮率) (Compression ratio)

在本說明書及申請專利範圍中,所謂壓縮率,是指研磨墊的柔軟性的指標。 In the scope of the present specification and the patent application, the compression ratio refers to an index of the flexibility of the polishing pad.

壓縮率可根據日本工業標準(JIS L 1021),使用肖伯型厚度測定器(加壓面:直徑為1cm的圓形)而求出。具體而言如以下所述。 The compression ratio can be obtained by using a Xiaobo-type thickness measuring device (pressing surface: a circular shape having a diameter of 1 cm) according to Japanese Industrial Standards (JIS L 1021). Specifically, it is as follows.

測定自無負荷狀態施加30秒鐘的初始負荷後的厚度t0,繼而測定自厚度t0的狀態施加30秒鐘的最終負荷後的厚度t1。壓縮率可藉由壓縮率(%)=100×(t0-t1)/t0的式而算出(另外,初始負荷為300g/cm2、最終負荷為1800g/cm2)。 Since no-load state measured thickness after the initial load is applied 30 seconds t 0, then the state was measured from the thickness t 0 of the thickness of the final load is applied for 30 seconds t 1. The compression ratio can be calculated by a formula of a compression ratio (%) = 100 × (t 0 - t 1 ) / t 0 (in addition, an initial load of 300 g/cm 2 and a final load of 1800 g/cm 2 ).

本發明的研磨墊的壓縮率(%)較佳為0.1%~5%,更佳為0.5%~3%,尤佳為0.8%~1.5%。若壓縮率為所述範圍內,則可提高被研磨物的平坦性。 The compression ratio (%) of the polishing pad of the present invention is preferably from 0.1% to 5%, more preferably from 0.5% to 3%, still more preferably from 0.8% to 1.5%. When the compression ratio is within the above range, the flatness of the object to be polished can be improved.

(厚度) (thickness)

本發明的研磨墊中的聚胺基甲酸酯樹脂片的厚度並無特別限制,例如可在0.5mm~3.0mm、較佳為0.5mm~1.5mm的範圍內使用。 The thickness of the polyurethane resin sheet in the polishing pad of the present invention is not particularly limited, and can be used, for example, in the range of 0.5 mm to 3.0 mm, preferably 0.5 mm to 1.5 mm.

(聚胺基甲酸酯樹脂的構成成分) (Composition of polyurethane resin)

在本說明書及申請專利範圍中,所謂聚胺基甲酸酯樹脂的構成成分,是指藉由其後的聚合反應而作為構成聚胺基甲酸酯樹脂的鏈的一部分併入的聚胺基甲酸酯樹脂的原料成分。 In the present specification and the scope of the patent application, the constituent component of the polyurethane resin refers to a polyamine group which is incorporated as a part of a chain constituting the polyurethane resin by a subsequent polymerization reaction. The raw material component of the formate resin.

作為構成本發明的研磨墊的聚胺基甲酸酯樹脂片的聚胺基甲酸酯樹脂的構成成分,可列舉:聚胺基甲酸酯樹脂的原料成分,即聚異氰酸酯成分、多元醇成分、及作為任意成分的多胺成分。 作為聚異氰酸酯成分,可列舉後述的(B)聚異氰酸酯化合物。作為多元醇化合物,可列舉(C)多元醇化合物及(D-2)預聚物合成後可使用的多元醇化合物。作為多胺成分,可列舉(D-1)多胺化合物。 The constituent components of the polyurethane resin constituting the polyurethane resin sheet of the polishing pad of the present invention include a raw material component of the polyurethane resin, that is, a polyisocyanate component and a polyol component. And a polyamine component as an optional component. The polyisocyanate component (B) polyisocyanate compound mentioned later is mentioned. Examples of the polyol compound include a polyol compound which can be used after the (C) polyol compound and the (D-2) prepolymer are synthesized. The polyamine component (D-1) polyamine compound is mentioned.

本發明的研磨墊中的聚胺基甲酸酯樹脂片,較佳為包含數量平均分子量為500~950的聚四亞甲基二醇作為構成聚胺基甲酸酯樹脂的多元醇成分。聚四亞甲基二醇的數量平均分子量更佳為600~900,尤佳為700~900。 The polyurethane resin sheet in the polishing pad of the present invention preferably contains a polytetramethylene glycol having a number average molecular weight of 500 to 950 as a polyol component constituting the polyurethane resin. The number average molecular weight of the polytetramethylene glycol is preferably from 600 to 900, particularly preferably from 700 to 900.

本發明的研磨墊可較佳用於矽、硬碟用玻璃基板、薄型液晶顯示器用母玻璃、半導體晶圓、半導體裝置等的研磨、特別是半導體裝置的化學機械研磨(CMP)。 The polishing pad of the present invention can be preferably used for polishing of a glass substrate for a crucible, a hard disk, a mother glass for a thin liquid crystal display, a semiconductor wafer, a semiconductor device, or the like, in particular, a chemical mechanical polishing (CMP) of a semiconductor device.

<<研磨墊的製造方法>> <<Method of manufacturing polishing pad>>

本發明的研磨墊例如可藉由本發明的製造方法而得。本發明的製造方法的特徵在於包括如下的步驟:至少將作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)、硬化劑(D)、平均粒徑為70μm~150μm的第1中空體、平均粒徑為5μm~60μm的第2中空體混合,而獲得成形體成形用混合液(混合步驟);及由所述成形體成形用混合液將聚胺基甲酸酯樹脂成形體成形而獲得聚胺基甲酸酯樹脂片(成形體成形步驟)。 The polishing pad of the present invention can be obtained, for example, by the production method of the present invention. The production method of the present invention is characterized by comprising the steps of: at least a polyurethane-containing isocyanate compound (A) as a prepolymer, a curing agent (D), and an average particle diameter of 70 μm to 150 μm. 1 hollow body, a second hollow body having an average particle diameter of 5 μm to 60 μm, to obtain a mixed liquid for molding a molded body (mixing step); and forming a polyurethane resin from the mixed liquid for forming the molded body The body is molded to obtain a polyurethane resin sheet (former forming step).

以下,對各步驟進行說明。 Hereinafter, each step will be described.

<混合步驟> <mixing step>

在混合步驟中,作為聚胺基甲酸酯樹脂片的原料,至少將含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)、硬化劑(D)、第1中空體、第2中空體混合。另外,在不損害本發明的效果的範圍內,可併用所述以外的成分。 In the mixing step, at least a polyurethane bond-containing isocyanate compound (A), a hardener (D), a first hollow body, and a second hollow body are mixed as a raw material of the polyurethane resin sheet. . Further, components other than the above may be used in combination within a range not impairing the effects of the present invention.

以下,對各成分進行說明。 Hereinafter, each component will be described.

[(A)含有聚胺基甲酸酯鍵的異氰酸酯化合物] [(A) Isocyanate Compound Containing Polyurethane Bond]

作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)(以下有時稱為(A)成分),是藉由使下述聚異氰酸酯化合物(B)與多元醇化合物(C)在通常所用的條件下反應而得的化合物,是在 分子內包含聚胺基甲酸酯鍵與異氰酸酯基者。另外,在不損害本發明的效果的範圍內,在含有聚胺基甲酸酯鍵的異氰酸酯化合物中可包含其他成分。 The polyurethane bond-containing isocyanate compound (A) (hereinafter sometimes referred to as (A) component) as a prepolymer is obtained by using the following polyisocyanate compound (B) and polyol compound (C) The compound obtained by the reaction under the usual conditions is A person having a polyurethane bond and an isocyanate group in the molecule. Further, other components may be contained in the isocyanate compound containing a polyurethane bond within a range not impairing the effects of the present invention.

作為含有聚胺基甲酸酯鍵的異氰酸酯化合物(A),可使用市售品,亦可使用將聚異氰酸酯化合物與多元醇化合物反應而合成者。所述反應並無特別限制,只要在聚胺基甲酸酯樹脂的製造中使用公知的方法及條件進行加成聚合反應即可。例如可藉由以下方法製造:在加溫至40℃的多元醇化合物中,在氮氣環境下,一邊攪拌一邊添加加溫至50℃的聚異氰酸酯化合物,在30分鐘後升溫至80℃繼而在80℃下反應60分鐘。 As the isocyanate compound (A) containing a polyurethane bond, a commercially available product may be used, or a compound obtained by reacting a polyisocyanate compound with a polyol compound may be used. The reaction is not particularly limited as long as the addition polymerization reaction is carried out by using a known method and conditions in the production of the polyurethane resin. For example, it can be produced by adding a polyisocyanate compound heated to 50 ° C while stirring in a polyol compound heated to 40 ° C under a nitrogen atmosphere, and then raising the temperature to 80 ° C after 30 minutes, followed by 80 The reaction was carried out at ° C for 60 minutes.

[(B)聚異氰酸酯化合物] [(B) Polyisocyanate Compound]

在本說明書及申請專利範圍中,所謂聚異氰酸酯化合物,是指在分子內具有2個以上異氰酸酯基的化合物。 In the present specification and the patent application, the polyisocyanate compound means a compound having two or more isocyanate groups in the molecule.

作為聚異氰酸酯化合物(B)(以下有時稱為(B)成分),若在分子內具有2個以上異氰酸酯基,則並無特別限制。例如作為在分子內具有2個異氰酸酯基的二異氰酸酯化合物,可列舉:間苯二異氰酸酯、對苯二異氰酸酯、2,6-甲苯二異氰酸酯(2,6-TDI)、2,4-甲苯二異氰酸酯(2,4-TDI)、萘-1,4-二異氰酸酯、二苯基甲烷-4,4'-二異氰酸酯(MDI)、4,4'-亞甲基-雙(環己基異氰酸酯)(氫化MDI)、3,3'-二甲氧基-4,4'-聯苯二異氰酸酯、3,3'-二甲基二苯基甲烷-4,4'-二異氰酸酯、二甲苯-1,4-二異氰酸酯、4,4'-二苯基丙烷二異氰酸酯、三亞甲基二異氰酸酯、六亞甲基二異氰酸酯、伸丙基 -1,2-二異氰酸酯、伸丁基-1,2-二異氰酸酯、伸環己基-1,2-二異氰酸酯、伸環己基-1,4-二異氰酸酯、對苯二異硫氰酸酯、二甲苯-1,4-二異硫氰酸酯、亞乙基二異硫氰酸酯等。 The polyisocyanate compound (B) (hereinafter sometimes referred to as the component (B)) is not particularly limited as long as it has two or more isocyanate groups in the molecule. For example, as the diisocyanate compound having two isocyanate groups in the molecule, m-phenylene diisocyanate, p-phenylene diisocyanate, 2,6-toluene diisocyanate (2,6-TDI), and 2,4-toluene diisocyanate are mentioned. (2,4-TDI), naphthalene-1,4-diisocyanate, diphenylmethane-4,4'-diisocyanate (MDI), 4,4'-methylene-bis(cyclohexyl isocyanate) (hydrogenation) MDI), 3,3'-dimethoxy-4,4'-biphenyldiisocyanate, 3,3'-dimethyldiphenylmethane-4,4'-diisocyanate, xylene-1,4 -diisocyanate, 4,4'-diphenylpropane diisocyanate, trimethylene diisocyanate, hexamethylene diisocyanate, propyl group -1,2-diisocyanate, butyl-1,2-diisocyanate, cyclohexyl-1,2-diisocyanate, cyclohexyl-1,4-diisocyanate, p-phenylene isothiocyanate, Xylene-1,4-diisothiocyanate, ethylene diisothiocyanate, and the like.

作為聚異氰酸酯化合物,較佳為二異氰酸酯化合物,其中更佳為2,4-TDI、2,6-TDI、MDI,特佳為2,4-TDI、2,6-TDI。 As the polyisocyanate compound, a diisocyanate compound is preferable, and more preferably 2,4-TDI, 2,6-TDI, MDI, particularly preferably 2,4-TDI or 2,6-TDI.

所述聚異氰酸酯化合物可單獨使用,亦可將多種聚異氰酸酯化合物加以組合而使用。 The polyisocyanate compound may be used singly or in combination of a plurality of polyisocyanate compounds.

[(C)多元醇化合物] [(C) Polyol Compound]

在本說明書及申請專利範圍中,所謂多元醇化合物,是指在分子內具有2個以上醇性羥基(OH)的化合物。 In the present specification and the patent application, the term "polyol compound" means a compound having two or more alcoholic hydroxyl groups (OH) in the molecule.

作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物的合成中所用的多元醇化合物(C)(以下有時稱為(C)成分),可列舉:乙二醇、二乙二醇(DEG)、丁二醇等二醇化合物、三醇化合物等;聚(氧四亞甲基)二醇(PTMG)等聚醚多元醇化合物;乙二醇與己二酸的反應物或丁二醇與己二酸的反應物等聚酯多元醇化合物;聚碳酸酯多元醇化合物、聚己內酯多元醇化合物等。另外,亦可使用加成了環氧乙烷而得的3官能性丙二醇。所述中,較佳為PTMG,亦較佳為將PTMG與DEG加以組合而使用。PTMG的數量平均分子量(Mn)較佳為500~950,更佳為600~900,尤佳為700~900。數量平均分子量可藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC)進行測定。另外,在由聚胺基甲酸酯樹脂測定多元醇化合物的數量平均分子量時,亦可在藉由胺分解等常 法將各成分分解後,藉由GPC進行推測。 The polyol compound (C) (hereinafter sometimes referred to as a component (C)) used in the synthesis of a polyurethane bond-containing isocyanate compound as a prepolymer may, for example, be ethylene glycol or diethylene glycol. a diol compound such as (DEG) or butanediol, a triol compound or the like; a polyether polyol compound such as poly(oxytetramethylene) glycol (PTMG); a reaction product of ethylene glycol with adipic acid or dibutyl A polyester polyol compound such as a reactant of an alcohol and adipic acid; a polycarbonate polyol compound, a polycaprolactone polyol compound, or the like. Further, a trifunctional propylene glycol obtained by adding ethylene oxide can also be used. Among them, PTMG is preferred, and PTMG and DEG are preferably used in combination. The number average molecular weight (Mn) of PTMG is preferably from 500 to 950, more preferably from 600 to 900, and particularly preferably from 700 to 900. The number average molecular weight can be determined by Gel Permeation Chromatography (GPC). In addition, when the number average molecular weight of the polyol compound is measured from the polyurethane resin, it may also be After decomposing the components, the method is estimated by GPC.

所述多元醇化合物(C)可單獨使用,亦可將多種多元醇化合物加以組合而使用。 The polyol compound (C) may be used singly or in combination of a plurality of polyol compounds.

(預聚物的NCO當量) (NCO equivalent of prepolymer)

另外,藉由「(聚異氰酸酯化合物(B)的質量份+多元醇化合物(C)的質量份)/[(聚異氰酸酯化合物(B)每1分子的官能基數×聚異氰酸酯化合物(B)的質量份/聚異氰酸酯化合物(B)的分子量)-(多元醇化合物(C)每1分子的官能基數×多元醇化合物(C)的質量份/多元醇化合物(C)的分子量)]」求出的預聚物的NCO當量,是表示相對於1個NCO基的PP(預聚物)的分子量的數值。所述NCO當量較佳為200~800,更佳為400~750,尤佳為450~700,特佳為500~700。 In addition, "(parts by mass of polyisocyanate compound (B) + parts by mass of polyol compound (C)) / [(number of functional groups per molecule of polyisocyanate compound (B) × mass of polyisocyanate compound (B)) (molecular weight of the polyisocyanate compound (B)) - (the number of functional groups per molecule of the polyol compound (C) × the mass part of the polyol compound (C) / the molecular weight of the polyol compound (C)) The NCO equivalent of the prepolymer is a value indicating the molecular weight of PP (prepolymer) with respect to one NCO group. The NCO equivalent is preferably from 200 to 800, more preferably from 400 to 750, particularly preferably from 450 to 700, and particularly preferably from 500 to 700.

[(D)硬化劑] [(D) hardener]

在本發明的製造方法中,在混合步驟中將硬化劑(亦稱為鏈伸長劑)與含有聚胺基甲酸酯鍵的異氰酸酯化合物等混合。藉由添加硬化劑,而在其後的成形體成形步驟中,作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物的主鏈末端與硬化劑鍵結而形成聚合物鏈,並硬化。 In the production method of the present invention, a hardener (also referred to as a chain extender) is mixed with an isocyanate compound containing a polyurethane bond or the like in the mixing step. By adding a hardener, in the subsequent molding step of molding, the main chain end of the polyurethane bond-containing isocyanate compound as a prepolymer is bonded to a hardener to form a polymer chain, and hardens. .

作為硬化劑,例如可使用多胺化合物及/或多元醇化合物。 As the hardener, for example, a polyamine compound and/or a polyol compound can be used.

((D-1)多胺化合物) ((D-1) polyamine compound)

在本說明書及申請專利範圍中,所謂多胺化合物,是指在分子內具有2個以上胺基的化合物。 In the present specification and the patent application, the polyamine compound refers to a compound having two or more amine groups in the molecule.

作為多胺化合物(D-1)(以下有時稱為(D-1)成分),可使用脂肪族或芳香族的多胺化合物、特別是二胺化合物,例如可列舉:乙二胺、丙二胺、六亞甲基二胺、異佛爾酮二胺、二環己基甲烷-4,4'-二胺、3,3'-二氯-4,4'-二胺基二苯基甲烷(亞甲基雙-鄰氯苯胺)(以下簡記為MOCA)、具有與MOCA相同結構的多胺化合物等。另外,多胺化合物可具有羥基,作為此種胺系化合物,例如可列舉:2-羥基乙基乙二胺、2-羥基乙基丙二胺、二-2-羥基乙基乙二胺、二-2-羥基乙基丙二胺、2-羥基丙基乙二胺、二-2-羥基丙基乙二胺等。 As the polyamine compound (D-1) (hereinafter sometimes referred to as a component (D-1)), an aliphatic or aromatic polyamine compound, particularly a diamine compound can be used, and examples thereof include ethylenediamine and propylene. Diamine, hexamethylenediamine, isophoronediamine, dicyclohexylmethane-4,4'-diamine, 3,3'-dichloro-4,4'-diaminodiphenylmethane (Methylene bis-o-chloroaniline) (hereinafter abbreviated as MOCA), a polyamine compound having the same structure as MOCA, and the like. Further, the polyamine compound may have a hydroxyl group, and examples of such an amine compound include 2-hydroxyethylethylenediamine, 2-hydroxyethylpropylenediamine, di-2-hydroxyethylethylenediamine, and 2-hydroxyethyl propylene diamine, 2-hydroxypropyl ethylene diamine, di-2-hydroxypropyl ethylene diamine, and the like.

作為多胺化合物,較佳為二胺化合物,更佳為MOCA、二胺基二苯基甲烷、二胺基二苯基碸,特佳為MOCA。 The polyamine compound is preferably a diamine compound, more preferably MOCA, diaminodiphenylmethane or diaminodiphenylphosphonium, and particularly preferably MOCA.

多胺化合物(D-1)可單獨使用,亦可將多種多胺化合物(D-1)加以組合而使用。 The polyamine compound (D-1) may be used singly or in combination of a plurality of polyamine compounds (D-1).

多胺化合物(D-1)為了容易與其他成分混合及/或為了提高其後的成形體形成步驟中的氣泡直徑的均勻性,較佳為根據需要在加熱的狀態下在減壓下進行脫泡。作為在減壓下的脫泡方法,只要在聚胺基甲酸酯的製造中使用公知的方法即可,例如可使用真空泵在0.1MPa以下的真空度下進行脫泡。 The polyamine compound (D-1) is preferably mixed with other components and/or in order to improve the uniformity of the bubble diameter in the subsequent molded body forming step, it is preferred to carry out the removal under reduced pressure in a heated state as needed. bubble. As the defoaming method under reduced pressure, a known method may be used for the production of the polyurethane, and for example, defoaming may be performed using a vacuum pump at a degree of vacuum of 0.1 MPa or less.

在使用固體的化合物作為硬化劑(鏈伸長劑)時,可一邊藉由加熱使其熔融,一邊在減壓下進行脫泡。 When a solid compound is used as a curing agent (chain extender), it can be defoamed under reduced pressure while being melted by heating.

((D-2)預聚物合成後可使用的多元醇化合物) ((D-2) Polyol compound which can be used after prepolymer synthesis)

另外,在本發明中,與用於形成作為所述預聚物的含有異氰 酸酯基的化合物的多元醇化合物(C)不同,可使用多元醇化合物(D-2)作為硬化劑。 Further, in the present invention, it is used to form an isocyanate as the prepolymer. The polyol compound (C) of the acid ester group compound is different, and the polyol compound (D-2) can be used as a hardener.

作為所述多元醇化合物(D-2),若為二醇化合物或三醇化合物等化合物,則可無特別限制地使用。另外,可與用於形成預聚物的多元醇化合物(C)相同,亦可不同。 The polyol compound (D-2) can be used without particular limitation as long as it is a compound such as a diol compound or a triol compound. Further, it may be the same as or different from the polyol compound (C) for forming the prepolymer.

作為具體例,可列舉:乙二醇、二乙二醇、三乙二醇、1,2-丙二醇、1,3-丙二醇、1,3-丁二醇、1,4-丁二醇、新戊二醇、戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇等低分子量二醇,聚四亞甲基二醇、聚乙二醇、聚丙二醇等高分子量多元醇化合物等。 Specific examples thereof include ethylene glycol, diethylene glycol, triethylene glycol, 1,2-propylene glycol, 1,3-propanediol, 1,3-butylene glycol, and 1,4-butanediol. Low molecular weight diols such as pentanediol, pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, polytetramethylene glycol, polyethylene glycol, polypropylene glycol, etc. High molecular weight polyol compounds and the like.

所述多元醇化合物(D-2)可單獨使用,亦可將多種多元醇化合物(D-2)加以組合而使用。 The polyol compound (D-2) may be used singly or in combination of a plurality of polyol compounds (D-2).

作為硬化劑(D),可使用多胺化合物(D-1),亦可使用多元醇化合物(D-2),還可使用所述的混合物。其中,較佳為使用多胺化合物(D-1)。 As the hardener (D), a polyamine compound (D-1) can be used, and a polyol compound (D-2) can also be used, and the mixture can also be used. Among them, the polyamine compound (D-1) is preferably used.

(r值) (r value)

在本發明的研磨墊的製造方法中,較佳為以存在於硬化劑(D)中的活性氫基(胺基及羥基)相對於作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)末端所存在的異氰酸酯基之當量比即r值成為0.70~1.30的方式,將各成分混合,r值更佳為0.75~1.20,特佳為0.80~1.10。 In the method for producing a polishing pad of the present invention, it is preferred that the active hydrogen group (amine group and hydroxyl group) present in the hardener (D) is relative to the isocyanate containing a polyurethane bond as a prepolymer. The equivalent ratio of the isocyanate groups present at the terminal of the compound (A), that is, the r value is 0.70 to 1.30, and the components are mixed, and the r value is more preferably 0.75 to 1.20, particularly preferably 0.80 to 1.10.

若r值為所述範圍內,則可減少研磨損傷的產生,且容易獲得研磨速度或平坦性均優異的研磨墊。 When the r value is within the above range, the occurrence of polishing damage can be reduced, and a polishing pad excellent in polishing speed or flatness can be easily obtained.

[(E)第1中空體及第2中空體] [(E) First hollow body and second hollow body]

在本發明的研磨墊製造方法中,使用第1中空體及第2中空體,使氣泡內包於聚胺基甲酸酯樹脂成形體內部。 In the method for producing a polishing pad of the present invention, the first hollow body and the second hollow body are used, and the cells are enclosed in the inside of the polyurethane resin molded body.

所謂中空體,是指具有空隙的微小球體。微小球體包括:球狀、橢圓狀、及與所述形狀接近的形狀者。作為中空體的例子,可列舉:使包括含熱塑性樹脂的外殼(聚合物殼)、與由外殼內包的低沸點烴的未發泡的加熱膨脹性微小球狀體加熱膨脹者。 The hollow body refers to a microsphere having a void. The microspheres include: a spherical shape, an elliptical shape, and a shape close to the shape. Examples of the hollow body include those in which an outer casing (polymer shell) containing a thermoplastic resin and an unexpanded heat-expandable microsphere having a low boiling point hydrocarbon contained in the outer shell are heated and expanded.

作為所述聚合物殼,如日本專利特開昭57-137323號公報等所揭示般,例如可使用:丙烯腈-偏二氯乙烯共聚物、丙烯腈-甲基丙烯酸甲酯共聚物、氯乙烯-乙烯共聚物等熱塑性樹脂。同樣,作為由聚合物殼內包的低沸點烴,例如可使用:異丁烷、戊烷、異戊烷、石油醚等。 As the polymer shell, as disclosed in Japanese Laid-Open Patent Publication No. SHO 57-137323, for example, an acrylonitrile-vinylidene chloride copolymer, an acrylonitrile-methyl methacrylate copolymer, or a vinyl chloride can be used. - a thermoplastic resin such as an ethylene copolymer. Also, as the low boiling point hydrocarbon contained in the polymer shell, for example, isobutane, pentane, isopentane, petroleum ether or the like can be used.

在本發明的研磨墊的製造方法中,使用平均粒徑為70μm~150μm的第1中空體、及平均粒徑為5μm~60μm的第2中空體。關於第1中空體及第2中空體的較佳的平均粒徑或其質量比,如上所述。 In the method for producing a polishing pad of the present invention, a first hollow body having an average particle diameter of 70 μm to 150 μm and a second hollow body having an average particle diameter of 5 μm to 60 μm are used. The preferred average particle diameter of the first hollow body and the second hollow body or the mass ratio thereof is as described above.

作為第1中空體的例子,可列舉:松本微球體F-80DE(松本油脂(股)製造)(為丙烯腈系的殼組成,平均粒徑為90μm~130μm、密度為20kg/m3±5kg/m3的經過膨脹的微小中空球狀體)。 Examples of the first hollow body include Matsumoto microspheres F-80DE (manufactured by Matsumoto Oil & Fats Co., Ltd.) (which is an acrylonitrile-based shell composition, and has an average particle diameter of 90 μm to 130 μm and a density of 20 kg/m 3 ± 5 kg. /m 3 of expanded micro hollow spheroids).

作為第2中空體的例子,可列舉:EXPANCEL461DE20d70(阿克斯潘塞路(EXPANCEL)公司製造)(為偏二氯乙烯-丙烯腈系的殼組成、平均粒徑為10μm~50μm、密度為67kg/m3±7kg/m3的 經過膨脹的微小中空球狀體)。 Examples of the second hollow body include EXPANCEL 461DE20d70 (manufactured by EXPANCEL), which is a shell composition of a vinylidene chloride-acrylonitrile system, an average particle diameter of 10 μm to 50 μm, and a density of 67 kg. /m 3 ±7 kg/m 3 of expanded micro hollow spheroids).

另外,平均粒徑可藉由雷射繞射式粒度分佈測定裝置(例如思百吉(Spectris)(股)製造、Mastersizer 2000)進行測定。 Further, the average particle diameter can be measured by a laser diffraction type particle size distribution measuring apparatus (for example, Spectris (manufactured by Spectris), Mastersizer 2000).

相對於構成預聚物的全部成分1000質量份,以成為較佳為1質量份~14質量份、更佳為2質量份~14質量份、尤佳為3質量份~14質量份的方式,添加第1中空體。 It is preferably 1 part by mass to 14 parts by mass, more preferably 2 parts by mass to 14 parts by mass, even more preferably 3 parts by mass to 14 parts by mass, based on 1000 parts by mass of all the components constituting the prepolymer. The first hollow body was added.

相對於構成預聚物的全部成分1000質量份,以成為較佳為1質量份~48質量份、更佳為2質量份~45質量份、尤佳為4質量份~40質量份的方式,添加第2中空體。 It is preferably 1 part by mass to 48 parts by mass, more preferably 2 parts by mass to 45 parts by mass, even more preferably 4 parts by mass to 40 parts by mass, based on 1000 parts by mass of all the components constituting the prepolymer. A second hollow body is added.

另外,除了所述成分以外,在不損害本發明的效果的範圍內,可將先前所使用的發泡劑與所述微小中空球體併用,亦可在下述混合步驟中對所述各成分吹入非反應性氣體。作為所述發泡劑,可列舉:水、或將碳數為5或6的烴作為主成分的發泡劑。 作為所述烴,例如可列舉:正戊烷、正己烷等鏈狀烴,或環戊烷、環己烷等脂環式烴。 Further, in addition to the above-described components, the foaming agent previously used may be used in combination with the minute hollow spheres, or the components may be blown in the mixing step described below, without impairing the effects of the present invention. Non-reactive gas. The foaming agent may, for example, be water or a foaming agent containing a hydrocarbon having 5 or 6 carbon atoms as a main component. Examples of the hydrocarbons include chain hydrocarbons such as n-pentane and n-hexane, and alicyclic hydrocarbons such as cyclopentane and cyclohexane.

另外,除了所述各成分,亦可添加公知的泡沫穩定劑、阻燃劑、著色劑、塑化劑等。 Further, a known foam stabilizer, a flame retardant, a colorant, a plasticizer or the like may be added in addition to the above components.

在混合步驟中,至少將作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)、硬化劑(D)、第1中空體、第2中空體供給至混合機內進行攪拌、混合。混合順序並無特別限制,較佳為可使含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)與第1中空體、第2中空體預先混合,並將其與硬化劑(D)或根據需要的其 他成分供給至混合機內。如此,製備成形體成形用混合液。混合步驟在加溫至可確保所述各成分的流動性的溫度的狀態下進行。 In the mixing step, at least the polyurethane-containing isocyanate compound (A), the curing agent (D), the first hollow body, and the second hollow body, which are prepolymers, are supplied to the mixer and stirred. mixing. The order of mixing is not particularly limited, and it is preferred that the isocyanate compound (A) containing the polyurethane linkage be mixed with the first hollow body and the second hollow body in advance, and it may be combined with the hardener (D) or Need it His ingredients are supplied to the mixer. In this manner, a mixed liquid for molding a shaped body was prepared. The mixing step is carried out while heating to a temperature at which the fluidity of the respective components can be ensured.

例如可在包含所述中空體的加溫至30℃~90℃的預聚物(含有聚胺基甲酸酯鍵的異氰酸酯)溶液中,將硬化劑投入至可調節溫度的帶有夾套的混合機中,在30℃~130℃下進行攪拌。根據需要可在帶有攪拌機的帶有夾套的槽中加入混合液進行老化。攪拌時間根據混合機的齒數或轉速、間隙等進行適當調整,例如為1秒鐘~60秒鐘。 For example, the hardener can be put into a jacket with adjustable temperature in a prepolymer (isocyanate containing polyisocyanate) solution containing the hollow body heated to 30 ° C to 90 ° C. In the mixer, stirring was carried out at 30 ° C to 130 ° C. The mixture may be added to the jacketed tank with a mixer for aging as needed. The stirring time is appropriately adjusted depending on the number of teeth of the mixer, the number of revolutions, the gap, and the like, and is, for example, 1 second to 60 seconds.

<成形體成形步驟> <Forming body forming step>

在成形體成形步驟中,藉由將在所述混合步驟中製備的成形體成形用混合液流入至30℃~100℃的模框內使其硬化,而將聚胺基甲酸酯樹脂成形。此時,藉由預聚物、硬化劑發生反應而形成聚胺基甲酸酯樹脂,而所述混合液在第1中空體及第2中空體大致均勻地分散在所述樹脂中的狀態下進行硬化。藉此形成包含大量的大致球狀的氣泡的聚胺基甲酸酯樹脂成形體。 In the molding step, the polyurethane molding resin is formed by flowing the mixture for molding a molded body prepared in the mixing step into a mold frame of 30° C. to 100° C. to be cured. In this case, the polyurethane and the curing agent are reacted to form a polyurethane resin, and the mixed liquid is substantially uniformly dispersed in the resin in the first hollow body and the second hollow body. Harden. Thereby, a polyurethane molding having a large number of substantially spherical bubbles is formed.

藉由所述成形體成形步驟而得的聚胺基甲酸酯樹脂成形體,然後切成片狀而形成聚胺基甲酸酯樹脂片。藉由進行切片,而在片表面設置開孔。此時,為了形成耐磨性優異且難以堵塞的研磨層表面的開孔,而可在30℃~120℃下老化(aging)1小時~24小時左右。 The polyurethane resin molded body obtained by the above-described molded body forming step is then cut into a sheet to form a polyurethane resin sheet. An opening is provided on the surface of the sheet by slicing. At this time, in order to form an opening of the surface of the polishing layer which is excellent in abrasion resistance and which is difficult to be clogged, it can be aged at 30 ° C to 120 ° C for about 1 hour to 24 hours.

關於如此而得的具有聚胺基甲酸酯樹脂片的研磨層,然後在研磨層的與研磨面為相反側的面上貼附雙面膠帶,切割成特 定形狀、較佳為圓板狀,從而完成為本發明的研磨墊。雙面膠帶並無特別限制,可自本技術領域中公知的雙面膠帶中任意選擇而使用。 The thus-obtained polishing layer having a polyurethane resin sheet, and then a double-sided tape is attached to the surface of the polishing layer opposite to the polishing surface, and cut into a special layer. The shape is preferably a disk shape, thereby completing the polishing pad of the present invention. The double-sided tape is not particularly limited and can be arbitrarily selected from the double-sided tape known in the art.

另外,本發明的研磨墊可為僅包含研磨層的單層結構,亦可包含在研磨層的與研磨面為相反側的面上貼合其他層(下層、支撐層)而成的多層。其他層的特性並無特別限定,較佳為在研磨層的相反側的面上貼合較研磨層軟(A硬度或D硬度小的)的層。藉由設置較研磨層軟的層,而研磨平坦性進一步提高。 Further, the polishing pad of the present invention may have a single layer structure including only the polishing layer, and may include a plurality of layers in which another layer (lower layer, support layer) is bonded to the surface of the polishing layer opposite to the polishing surface. The characteristics of the other layer are not particularly limited, and it is preferred to bond a layer which is softer than the polishing layer (having a small A hardness or a small D hardness) on the surface opposite to the polishing layer. The polishing flatness is further improved by providing a layer which is softer than the abrasive layer.

在具有多層結構時,只要使用雙面膠帶或黏接劑等並根據需要將多個層彼此一邊加壓一邊黏接、固定即可。此時所使用的雙面膠帶或黏接劑並無特別限制,可自本技術領域中公知的雙面膠帶或黏接劑中任意選擇而使用。 When the multilayer structure is used, it is sufficient to use a double-sided tape, an adhesive, or the like, and press and fix a plurality of layers while pressing each other as needed. The double-sided tape or the adhesive to be used at this time is not particularly limited, and can be arbitrarily selected from double-sided tapes or adhesives known in the art.

而且,本發明的研磨墊根據需要可對研磨層的表面及/或背面進行研削處理,或對表面實施槽加工或壓花加工或孔加工(沖孔加工),亦可將基材及/或黏著層與研磨層貼合,還可具備透光部。 Moreover, the polishing pad of the present invention may be subjected to grinding treatment on the surface and/or the back surface of the polishing layer as needed, or performing groove processing or embossing processing or hole processing (punching processing) on the surface, or may be a substrate and/or a substrate and/or The adhesive layer is bonded to the polishing layer, and may also have a light transmitting portion.

研削處理的方法並無特別限制,可藉由公知的方法進行研削。具體可列舉藉由砂紙的研削。 The method of the grinding treatment is not particularly limited, and the grinding can be carried out by a known method. Specifically, grinding by sandpaper can be cited.

槽加工及壓花加工的形狀並無特別限制,例如可列舉:格子型、同心圓型、放射型等形狀。 The shape of the groove processing and the embossing is not particularly limited, and examples thereof include a lattice shape, a concentric shape, and a radial shape.

在使用本發明的研磨墊時,以研磨層的研磨面與被研磨物相對的方式,將研磨墊安裝於研磨機的研磨平板上。繼而,一 邊供給研磨劑漿料,一邊使研磨平板旋轉,而對被研磨物的加工表面進行研磨。 When the polishing pad of the present invention is used, the polishing pad is attached to the polishing plate of the grinder so that the polishing surface of the polishing layer faces the object to be polished. Then one While the polishing slurry is supplied, the polishing plate is rotated to polish the surface of the workpiece.

作為藉由本發明的研磨墊進行加工的被研磨物,可列舉:硬碟用玻璃基板、薄型顯示器用母玻璃、半導體晶圓、半導體裝置等。其中,本發明的研磨墊較佳用於對半導體裝置進行化學機械研磨(CMP)加工。 Examples of the object to be polished which are processed by the polishing pad of the present invention include a glass substrate for a hard disk, a mother glass for a thin display, a semiconductor wafer, and a semiconductor device. Among them, the polishing pad of the present invention is preferably used for chemical mechanical polishing (CMP) processing of a semiconductor device.

[實施例] [Examples]

以下,藉由實施例對本發明進行更詳細的說明,但本發明並不受所述實施例限定。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention should not be construed as limited.

在各實施例及比較例以及表1~表5中,只要無特別說明,「份」是指「質量份」。 In each of the examples, the comparative examples, and the tables 1 to 5, "parts" means "parts by mass" unless otherwise specified.

另外,表1~表2的各縮寫符號是指以下成分。 In addition, each abbreviation of Table 1 - Table 2 means the following components.

.PTMG:聚(氧四亞甲基)二醇 . PTMG: poly(oxytetramethylene) glycol

.DEG:二乙二醇 . DEG: Diethylene glycol

.2,4-TDI:2,4-甲苯二異氰酸酯 . 2,4-TDI: 2,4-toluene diisocyanate

.MOCA:4,4'-亞甲基雙(2-氯苯胺) . MOCA: 4,4'-methylenebis(2-chloroaniline)

第1中空體:平均粒徑為93.6μm、密度為20kg/m3±5kg/m3的微小中空球狀體(商品名:松本微球體F-80DE(松本油脂股份有限公司製造)) The first hollow body: a micro hollow spheroid having an average particle diameter of 93.6 μm and a density of 20 kg/m 3 ± 5 kg/m 3 (trade name: Matsumoto microsphere F-80DE (manufactured by Matsumoto Oil Co., Ltd.))

第2中空體:平均粒徑為21.0μm、密度為67kg/m3±7kg/m3的微小中空球狀體(商品名:EXPANCEL461DE20d70(阿克斯潘塞路公司製造)) The second hollow body: average particle diameter 21.0μm, a density of 67kg / m 3 ± 7kg / m 3 tiny hollow spheroids (trade name: EXPANCEL461DE20d70 (Ak Spencer Road Corporation))

另外,所謂NCO當量,是表示藉由「(聚異氰酸酯化合物的質量(份)+多元醇化合物(C)的質量(份))/[(聚異氰酸酯化合物每1分子的官能基數×聚異氰酸酯化合物的質量(份)/聚異氰酸酯化合物的分子量)-(多元醇化合物(C)每1分子的官能基數×多元醇化合物(C)的質量(份)/多元醇化合物(C)的分子量)]」而求出的相對於1個NCO基的預聚物(PP)的分子量的數值。 In addition, the NCO equivalent is represented by "(mass (parts) of polyisocyanate compound + mass (parts) of polyol compound (C)) / [(number of functional groups per molecule of polyisocyanate compound × polyisocyanate compound) Mass (parts) / molecular weight of the polyisocyanate compound) - (the number of functional groups per molecule of the polyol compound (C) × the mass (parts) of the polyol compound (C) / the molecular weight of the polyol compound (C)) The value of the molecular weight of the prepolymer (PP) relative to one NCO group was determined.

所謂r值,如上所述般,是表示存在於硬化劑中的活性氫基(胺基及羥基)相對於預聚物中的末端異氰酸酯基的當量比的數值。 The r value is a numerical value indicating the equivalent ratio of the active hydrogen group (amine group and hydroxyl group) present in the curing agent to the terminal isocyanate group in the prepolymer as described above.

<實施例1> <Example 1>

實施例1中,作為第1成分的預聚物,使用將2,4-甲苯二異氰酸酯(2,4-TDI)400份、數量平均分子量為約650的聚(氧四亞甲基)二醇(PTMG)519份、二乙二醇(DEG)81份反應而得、異氰酸酯含量是NCO當量為681的含有末端異氰酸酯基的胺基甲酸酯預聚物,將其加熱至55℃,在其中添加12份松本微球體F-80DE、12份EXPANCEL461DE20d70,在減壓下進行脫泡。第2成分的MOCA在120℃下熔融,並在減壓下進行脫泡。將第1成分與第2成分以r值成為1.21的方式進行混合,將所得的混合液澆鑄至預熱至100℃的模框中進行30分鐘硬化後,將所形成的聚胺基甲酸酯發泡體自模框抽出。將所述發泡體切成1.3mm的厚度而製作胺基甲酸酯片,並獲得研磨墊。 In Example 1, as the prepolymer of the first component, poly(oxytetramethylene) glycol having 400 parts of 2,4-toluene diisocyanate (2,4-TDI) and a number average molecular weight of about 650 was used. (PTMG) 519 parts, diethylene glycol (DEG) 81 parts obtained, the isocyanate content is a terminal isocyanate group-containing urethane prepolymer having an NCO equivalent of 681, which is heated to 55 ° C, in which 12 parts of Matsumoto microspheres F-80DE and 12 parts of EXPANCEL461DE20d70 were added, and defoaming was carried out under reduced pressure. The MOCA of the second component was melted at 120 ° C and defoamed under reduced pressure. The first component and the second component were mixed so that the r value became 1.21, and the obtained mixed solution was cast into a mold box preheated to 100 ° C for 30 minutes, and then the formed polyurethane was formed. The foam is drawn from the mold frame. The foam was cut into a thickness of 1.3 mm to prepare a urethane sheet, and a polishing pad was obtained.

<實施例2及比較例1~比較例2> <Example 2 and Comparative Example 1 to Comparative Example 2>

以表1所示的方式,使PTMG的數量平均分子量(Mn)發生變動,除此以外,藉由與實施例1相同的方法,製造實施例2及比較例1~比較例2的研磨墊。 The polishing pads of Example 2 and Comparative Example 1 to Comparative Example 2 were produced in the same manner as in Example 1 except that the number average molecular weight (Mn) of the PTMG was changed as shown in Table 1.

<實施例3~實施例4及比較例3~比較例4> <Example 3 to Example 4 and Comparative Example 3 to Comparative Example 4>

以表2所示的方式,使硬化劑的量發生變動,除此以外,藉由與實施例2相同的方法,製造實施例3~實施例4及比較例3~比較例4的研磨墊。 The polishing pads of Examples 3 to 4 and Comparative Examples 3 to 4 were produced in the same manner as in Example 2 except that the amount of the curing agent was changed as shown in Table 2.

<實施例5~實施例8及比較例5~比較例6> <Example 5 to Example 8 and Comparative Example 5 to Comparative Example 6>

以表3~表4所示的方式,使第1中空體與第2中空體的質量比發生變動,除此以外,藉由與實施例2相同的方法,製造實施例5~實施例8及比較例5~比較例6的研磨墊。另外,為了在實施例、比較例間消除因氣泡率的差異引起的對效果的影響,而以各實施例及比較例的氣泡率大致固定的方式,變更第1中空體與第2中空體的質量比。 In the same manner as in the second embodiment, the fifth to eighth embodiments were produced in the same manner as in the second embodiment, except that the mass ratio of the first hollow body to the second hollow body was changed as shown in Tables 3 to 4. The polishing pads of Comparative Examples 5 to 6 were used. In order to eliminate the influence on the effect due to the difference in the bubble ratio between the examples and the comparative examples, the first hollow body and the second hollow body were changed so that the bubble ratios of the respective examples and the comparative examples were substantially fixed. Quality ratio.

<比較例7> <Comparative Example 7>

在比較例7中,使用市售的研磨墊(商品名:IC1000(註冊商標)、霓塔哈斯股份有限公司製造)。 In Comparative Example 7, a commercially available polishing pad (trade name: IC1000 (registered trademark), manufactured by Nita Haas Co., Ltd.) was used.

<比較例8> <Comparative Example 8>

在比較例8中,根據日本專利第3013105號的例1,使用1000份Adiprene L325(NCO當量為466),將其加熱至55℃,在其中添加EXPANCEL551DE40d42(為偏二氯乙烯-丙烯腈系的殼組成、 平均粒徑為40.9μm、密度為42kg/m3±4kg/m3的經過膨脹的微小中空球狀體)20份,在減壓下進行脫泡。第2成分的MOCA在120℃下熔融,並在減壓下進行脫泡。將第1成分與第2成分以r值成為0.90的方式進行混合,將所得的混合液澆鑄至預熱至100℃的模框中進行30分鐘硬化後,將所形成的聚胺基甲酸酯發泡體自模框抽出。將所述發泡體切成1.3mm的厚度而製作胺基甲酸酯片,並獲得研磨墊。 In Comparative Example 8, according to Example 1 of Japanese Patent No. 3013105, 1000 parts of Adiprene L325 (NCO equivalent of 466) was used, which was heated to 55 ° C, and EXPANCEL 551 DE 40d42 (which is a vinylidene chloride-acrylonitrile type) was added thereto. 20 parts of the expanded micro hollow spheroids having a shell composition of 40.9 μm and a density of 42 kg/m 3 ± 4 kg/m 3 were subjected to defoaming under reduced pressure. The MOCA of the second component was melted at 120 ° C and defoamed under reduced pressure. The first component and the second component were mixed so that the r value became 0.90, and the obtained mixed solution was cast into a mold box preheated to 100 ° C for 30 minutes, and then the formed polyurethane was formed. The foam is drawn from the mold frame. The foam was cut into a thickness of 1.3 mm to prepare a urethane sheet, and a polishing pad was obtained.

<實施例9> <Example 9>

在實施例9中,作為中空體,使用9份松本微球體F-80DE(第1中空體)、10份EXPANCEL461DE20d70(第2中空體),除此以外,藉由與比較例8相同的方法,製作胺基甲酸酯片,並獲得研磨墊。另外,為了消除在實施例9與比較例8中因氣泡率的差異引起的對效果的影響,而以實施例9與比較例8的氣泡率大致固定的方式,變更第1中空體與第2中空體的質量比。 In the same manner as in Comparative Example 8, except that 9 parts of Matsumoto microspheres F-80DE (first hollow body) and 10 parts of EXPANCEL 461DE20d70 (second hollow body) were used as the hollow body. A urethane sheet was made and a polishing pad was obtained. In addition, in order to eliminate the influence on the effect due to the difference in the bubble ratio in Example 9 and Comparative Example 8, the first hollow body and the second type were changed so that the bubble ratios of Example 9 and Comparative Example 8 were substantially constant. The mass ratio of the hollow body.

<實施例10> <Example 10>

在實施例10中,作為第1成分的預聚物,使用將加成了環氧乙烷的丙二醇與二苯基甲烷-4,4'-二異氰酸酯(MDI)反應而得、NCO當量為236的含有末端異氰酸酯基的胺基甲酸酯預聚物(大日本油墨化學(Dainippon Ink and Chemicals,DIC)股份有限公司製造、商品名:PANDEX TM-227),將其加熱至60℃,在其中添加12份松本微球體F-80DE、12份EXPANCEL461DE20d70,在減壓下進行脫泡。第2成分使用低分子二醇的混合物且羥基含量 為68的鏈伸長劑(大日本油墨化學股份有限公司製造、商品名:PANDEX TM-228),在40℃下保溫,並在減壓下進行脫泡。將第1成分與第2成分以r值成為0.95的方式進行混合,將所得的混合液澆鑄至預熱至70℃的模框中進行60分鐘硬化後,將所形成的聚胺基甲酸酯發泡體自模框抽出。將所述發泡體在70℃下進行10小時的二次固化,並切成1.3mm的厚度而製作胺基甲酸酯片,並獲得研磨墊。 In Example 10, the prepolymer as the first component was obtained by reacting propylene glycol added with ethylene oxide with diphenylmethane-4,4'-diisocyanate (MDI) to have an NCO equivalent of 236. A urethane prepolymer containing a terminal isocyanate group (manufactured by Dainippon Ink and Chemicals, Inc., trade name: PANDEX TM-227), which is heated to 60 ° C, in which 12 parts of Matsumoto microspheres F-80DE and 12 parts of EXPANCEL461DE20d70 were added, and defoaming was carried out under reduced pressure. The second component uses a mixture of low molecular diols and hydroxyl content The chain extender of 68 (manufactured by Dainippon Ink Chemical Co., Ltd., trade name: PANDEX TM-228) was kept at 40 ° C, and defoamed under reduced pressure. The first component and the second component were mixed so that the r value became 0.95, and the obtained mixed solution was cast until it was preheated to a mold frame of 70 ° C for 60 minutes, and then the formed polyurethane was formed. The foam is drawn from the mold frame. The foam was subjected to secondary curing at 70 ° C for 10 hours, and cut into a thickness of 1.3 mm to prepare a urethane sheet, and a polishing pad was obtained.

<物性> <physical property>

對所述各實施例及比較例,算出或測定熱導率(W/m.k)、tanδ、壓縮彈性模數(%)、氣泡率(體積分率)(%)、密度(g/cm3)、D硬度(°)、壓縮率(%)、厚度(mm)。將其結果表示於表6~表9。 For each of the above examples and comparative examples, thermal conductivity (W/m.k), tan δ, compressive elastic modulus (%), bubble ratio (volume fraction) (%), and density (g/cm) were calculated or measured. 3 ), D hardness (°), compression ratio (%), thickness (mm). The results are shown in Tables 6 to 9.

另外,各項目的測定方法如以下所述。 In addition, the measurement method of each item is as follows.

(熱導率(W/m.k)) (thermal conductivity (W/m.k))

在藉由水浴冷卻維持為20℃的恆溫台上,載置實施例1~實施例10及比較例1~比較例8的各片,測定將熱源台的溫度保持為30℃所需要的消耗電力(熱流損耗、W)。測定裝置使用B型精密迅速熱物性測定裝置(商品名:THERMO LABO II.KES-F7(加多技術股份有限公司製造))。測定條件設為溫度為20℃、相對濕度為65℃、負荷為6g/cm2、接觸面積(熱板面積)為50mm×50 mm。 Each of the sheets of Examples 1 to 10 and Comparative Examples 1 to 8 was placed on a constant temperature stage maintained at 20 ° C by a water bath cooling, and the power consumption required to maintain the temperature of the heat source stage at 30 ° C was measured. (heat flow loss, W). For the measurement device, a type B precision rapid thermal property measuring device (trade name: THERMO LABO II. KES-F7 (manufactured by Jado Technology Co., Ltd.)) was used. The measurement conditions were such that the temperature was 20 ° C, the relative humidity was 65 ° C, the load was 6 g/cm 2 , and the contact area (hot plate area) was 50 mm × 50 mm.

熱導率可藉由熱流損耗(W)×厚度(m)÷(熱板面積(m2)×試樣面的溫度差(℃))而求出。 The thermal conductivity can be obtained by heat flow loss (W) × thickness (m) ÷ (hot plate area (m 2 ) × temperature difference (° C) of the sample surface).

(tanδ(45℃)) (tan δ (45 ° C))

儲存彈性模數(MPa)藉由日本TA儀器(TA Instruments.Japan)的RSAIII,依據JIS K7244-4,在初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為10rad/sec(約1.6Hz)、升溫速度為5.0℃/min下,測定自20℃升溫至100℃時的在45℃下的試驗片10mm×5mm的儲存彈性模數、損耗彈性模數、tanδ。另外,詳細的條件如以下所述。 The storage elastic modulus (MPa) was measured by RSAIII of TA Instruments (TA Instruments. Japan) according to JIS K7244-4, with an initial load of 200 g, a strain range of 0.1% to 0.5%, and a measurement frequency of 10 rad/sec. 1.6 Hz), and the temperature increase rate was 5.0 ° C / min, and the storage elastic modulus, loss elastic modulus, tan δ of the test piece of 10 mm × 5 mm at 45 ° C when the temperature was raised from 20 ° C to 100 ° C was measured. In addition, detailed conditions are as follows.

測定裝置:日本TA儀器RSAIII Measuring device: Japan TA Instruments RSAIII

試驗方向:拉伸 Test direction: stretching

試驗片:10mm×5mm Test piece: 10mm × 5mm

負荷:200g Load: 200g

應變:0.1%~0.5% Strain: 0.1%~0.5%

頻率:10rad/sec=1.6Hz Frequency: 10 rad/sec = 1.6 Hz

溫度:20℃~100℃ Temperature: 20 ° C ~ 100 ° C

試樣厚度:藉由厚度計測定(設為無槽) Sample thickness: measured by a thickness gauge (set to no groove)

(氣泡率(%)) (bubble rate (%))

由10cm見方的5點(角4點+正中1點)的厚度的平均值計算體積。測定所述樣品的重量,除以所述求出的體積,藉此算出樣品的密度。繼而,將聚胺基甲酸酯樹脂的密度設為1.2g/cm3, 藉由下述式算出氣泡率。 The volume was calculated from the average of the thicknesses of 5 points (angle 4 points + 1 point) of 10 cm square. The weight of the sample was measured and divided by the obtained volume, thereby calculating the density of the sample. Then, the density of the polyurethane resin was set to 1.2 g/cm 3 , and the bubble ratio was calculated by the following formula.

氣泡率={1-(樣品的密度/1.2)}×100 Bubble rate = {1 - (density of sample / 1.2)} × 100

(體積密度) (bulk density)

體積密度(g/cm3)藉由測定切出成特定尺寸的大小的試樣的重量(g),根據尺寸求出體積(cm3)而算出。 The bulk density (g/cm 3 ) was calculated by measuring the weight (g) of a sample cut into a specific size and obtaining a volume (cm 3 ) from the size.

(D硬度) (D hardness)

D硬度是根據日本工業標準(JIS K 7311),硬度計使用JIS K 7215所規定的D型硬度計(商品名「GS-702N」、得樂(TECLOCK)公司製造)測定蕭氏D硬度。另外,試樣是重疊5片比較例及實施例所記載的胺基甲酸酯片(厚度為約1.3mm),以至少總厚度成為6mm以上的方式進行設定。 The D hardness is measured by the Japanese Industrial Standard (JIS K 7311), and the D hardness tester (trade name "GS-702N", manufactured by TECLOCK Co., Ltd.) prescribed by JIS K 7215 is used for the hardness tester. In addition, the sample was prepared by laminating five urethane sheets (thickness: about 1.3 mm) described in the comparative examples and the examples, and was set so that the total thickness was at least 6 mm.

(壓縮率(%)及壓縮彈性模數(%)) (compression ratio (%) and compressive elastic modulus (%))

壓縮率及壓縮彈性模數是依據JIS-L1021,使用肖伯型厚度測定器(加壓面:直徑為1cm的圓形)而求出。具體而言,在室溫下,測定自無負荷的狀態以初始負荷施加30秒鐘的初始負荷的加壓後的厚度t0,繼而自厚度t0的狀態施加最終壓力,測定在原來的負荷的基礎下放置1分鐘後的厚度t1。繼而自厚度t1的狀態除去全部的負荷,放置5分鐘後,再次測定施加30秒鐘的初始負荷後的厚度t0'。根據所述值,根據該些藉由下述式算出壓縮率及壓縮彈性模數 壓縮率(%)=(t0-t1)/t0×100 The compression ratio and the compression elastic modulus were determined in accordance with JIS-L1021 using a Shaw-type thickness measuring device (pressure surface: a circle having a diameter of 1 cm). Specifically, at room temperature, measured from the no load is applied the initial load thickness after pressing for 30 seconds to t 0 of the initial load, and then a pressure is applied from the final state of a thickness of t 0, the load measured in the original The thickness t 1 after placing it for 1 minute. After the turn, since the thickness t 1 of the state of the load was completely removed, stand for 5 minutes, the thickness was measured again after the initial load is applied for 30 seconds t 0 '. Based on the values, the compression ratio and the compression elastic modulus compression ratio (%) = (t 0 - t 1 ) / t 0 × 100 are calculated based on the following equations.

壓縮彈性模數(%)=(t0'-t1)/(t0-t1)×100。 The compression elastic modulus (%) = (t 0 '-t 1 ) / (t 0 - t 1 ) × 100.

另外,初始負荷設為300g/cm2,最終負荷設為1800g/cm2Further, the initial load was set to 300 g/cm 2 and the final load was set to 1800 g/cm 2 .

<研磨試驗> <grinding test>

在以下研磨條件下對各實施例及比較例的研磨墊進行研磨加工,測定研磨速度、研磨損傷產生個數、凹陷深度。作為被研磨物,使用在12英吋的矽晶圓上以成為1μm的厚度的方式藉由化學氣相沈積法(Chemical Vapor Deposition,CVD)將四乙氧基矽烷形成絕緣膜的基板。 The polishing pads of the respective examples and comparative examples were subjected to polishing treatment under the following polishing conditions, and the polishing rate, the number of polishing damages, and the depth of depression were measured. As the object to be polished, a substrate in which an ethylene oxide is formed into an insulating film by chemical vapor deposition (CVD) on a 12-inch germanium wafer to a thickness of 1 μm was used.

(研磨速度) (grinding speed)

研磨速度是以厚度(Å)表示每1分鐘的研磨量者,對研磨加工前後的基板的絕緣膜根據各17個部位的厚度測定結果求出平均 值。另外,厚度測定藉由光學式膜厚膜質測定器(科磊(KLA-Tencor)公司製造、ASET-F5x)的多普勒波束銳化(Doppler beam sharpening,DBS)模式進行測定。 The polishing rate is expressed by the thickness (Å) per minute, and the average thickness of the insulating film of the substrate before and after the polishing is determined based on the thickness measurement of each of the 17 portions. value. Further, the thickness measurement was carried out by a Doppler beam sharpening (DBS) mode of an optical film thickness film measuring instrument (KLA-Tencor Co., Ltd., ASET-F5x).

(研磨損傷的產生個數) (the number of grinding damages)

關於研磨損傷的產生個數,對25片基板進行研磨,對研磨加工後的第20片及第25片基板,藉由光學式膜厚膜質測定器(科磊公司製造、ASET-F5x)的DBS模式進行測定,求出基板表面的研磨損傷的產生個數。 For the number of polishing damages, 25 substrates were polished, and the 20th and 25th substrates after the polishing were processed by the optical film thickness film tester (ASET-F5x, manufactured by Kelei Co., Ltd.). The pattern was measured, and the number of occurrences of polishing damage on the surface of the substrate was determined.

(凹陷深度) (depression depth)

凹陷深度的測定是藉由微細形狀測定器(科磊公司製造、P-16+)測定凹陷(L/S=100μm)=研磨後的晶圓的階差。 The depth of the depression was measured by a fine shape measuring instrument (manufactured by Kelei Co., Ltd., P-16+) to measure the depression (L/S = 100 μm) = the step of the polished wafer.

另外,所述試驗中所用的研磨條件如以下所述。 In addition, the polishing conditions used in the test are as follows.

.使用研磨機:荏原製作所(股)公司製造、型號「F-REX300」 . Using a grinder: manufactured by Ebara Seisakusho Co., Ltd., model "F-REX300"

.研磨頭:荏原製作所(股)公司製造、型號「GII」 . Grinding head: manufactured by Ebara Seisakusho Co., Ltd., model "GII"

.研磨墊徑:740mmΦ . Grinding pad diameter: 740mmΦ

.轉速:(壓盤)70rpm、(頂環(top ring))71rpm . Speed: (platen) 70rpm, (top ring) 71rpm

.研磨壓力:220hPa . Grinding pressure: 220hPa

.研磨劑:卡博特(Cabot)公司製造 產品編號:SS-25.2倍稀釋(使用SS25原液:純水=1:1的混合液) . Abrasive: manufactured by Cabot Company Product Code: SS-25.2 times dilution (using SS25 stock solution: pure water = 1:1 mixture)

.研磨劑溫度:20℃ . Abrasive temperature: 20 ° C

.研磨劑噴出量:200ml/min . Abrasive spray amount: 200ml/min

.使用工件(被研磨物):在12英吋Φ矽晶圓上藉由CVD以成 為1μm的厚度的方式將四乙氧基矽烷形成絕緣膜的基板 . Use of workpiece (abrasive): by CVD on a 12-inch Φ 矽 wafer A substrate in which an epoxy film is formed of tetraethoxy decane in a thickness of 1 μm

.研磨時間:60秒鐘/各次 . Grinding time: 60 seconds / each time

.墊.適用條件:30N×30分鐘、鑽石修整器# 250(3M製造的A-188)轉速為54rpm、平板轉速為80rpm、超純水供給量為200mL/min . pad. Applicable conditions: 30N×30 minutes, diamond dresser #250 (A-188 made by 3M), the rotation speed is 54rpm, the plate rotation speed is 80rpm, and the ultra-pure water supply is 200mL/min.

.研磨條件:平板轉速為70rpm、研磨頭轉速為71rpm、研磨漿料流量為200mL/min、研磨時間為1分鐘、研磨壓為2.5psi(1.7×104Pa) . Grinding conditions: plate rotation speed of 70 rpm, grinding head rotation speed of 71 rpm, grinding slurry flow rate of 200 mL/min, grinding time of 1 minute, and grinding pressure of 2.5 psi (1.7 × 10 4 Pa)

對於各實施例及比較例,將使用所述方法進行的研磨試驗的結果表示於表6~表9。 The results of the polishing test using the above method for each of the examples and the comparative examples are shown in Tables 6 to 9.

關於研磨速度,將1650(Å/min)以上評價為A,將1600以上~小於1650(Å/min)評價為B,將小於1600(Å/min)評價為C。 Regarding the polishing rate, 1650 (Å/min) or more was evaluated as A, 1600 or more to less than 1650 (Å/min) was evaluated as B, and less than 1600 (Å/min) was evaluated as C.

關於研磨損傷產生個數,將小於290(個)評價為A,將小於300~290以上(個)評價為B,將300以上(個)評價為C。 Regarding the number of polishing damages, less than 290 (one) was evaluated as A, less than 300 to 290 or more was evaluated as B, and 300 or more was evaluated as C.

關於凹陷深度,數值越大,表示越產生凹陷,平坦性越差,因此將小於48.0(nm)評價為A,將48.0以上~小於50.0(nm)評價為B,將50.0(nm)以上評價為C。 Regarding the depth of the depression, the larger the numerical value, the more the depression is formed, and the flatness is worse. Therefore, it is evaluated as A by less than 48.0 (nm), B as B by 48.0 or more and less than 50.0 (nm), and 50.0 (nm) or more as C.

並且,對於研磨速度、研磨損傷產生個數及凹陷深度這3種,將均不為C者(3種全部為A或B者)評價為較佳例(實施例),在本發明中將具有1個以上C者評價為欠佳例(比較例)。 Further, in the case of the polishing rate, the number of polishing damages, and the depth of the depression, none of the three (all three are A or B) are evaluated as preferred examples (embodiments), and in the present invention, One or more Cs were evaluated as less favorable (comparative examples).

(試驗結果1(實施例1~實施例2及比較例1~比較例 2)) (Test Results 1 (Examples 1 to 2 and Comparative Examples 1 to Comparative Examples) 2))

比較例1、比較例2的研磨墊中,tanδ小,產生大量的研磨損傷,在研磨速度或平坦性的方面亦差。另一方面,實施例1~實施例2的研磨墊中,tanδ為0.130~0.270的範圍內,熱導率為0.10W/(m.k)以下,且壓縮彈性模數為60%~100%,因此研磨損傷少,研磨速度或平坦性亦優異。 In the polishing pads of Comparative Example 1 and Comparative Example 2, tan δ was small, and a large amount of polishing damage occurred, which was also inferior in terms of polishing rate and flatness. On the other hand, in the polishing pads of Examples 1 to 2, the tan δ is in the range of 0.130 to 0.270, the thermal conductivity is 0.10 W/(m.k) or less, and the compression elastic modulus is 60% to 100%. Therefore, the polishing damage is small, and the polishing speed or flatness is also excellent.

(試驗結果2(實施例3~實施例4及比較例3~比較例4)) (Test Results 2 (Examples 3 to 4 and Comparative Examples 3 to 4))

比較例3的研磨墊中,tanδ小,產生大量的研磨損傷,在研磨速度或平坦性的方面亦差。另外,在比較例4的研磨墊中,雖然tanδ為本發明的範圍內,但壓縮彈性模數小,因此產生大量的研磨損傷,平坦性亦差。另一方面,實施例3~實施例4的研磨墊中,tanδ為0.130~0.270的範圍內,熱導率為0.10W/(m.k)以下,且壓縮彈性模數為60%~100%,因此研磨損傷少,研磨速度或平坦性亦優異。 In the polishing pad of Comparative Example 3, tan δ was small, and a large amount of polishing damage occurred, which was also inferior in terms of polishing speed and flatness. Further, in the polishing pad of Comparative Example 4, although tan δ is within the range of the present invention, the compression elastic modulus is small, so that a large amount of polishing damage is generated and the flatness is also poor. On the other hand, in the polishing pads of Examples 3 to 4, the tan δ is in the range of 0.130 to 0.270, the thermal conductivity is 0.10 W/(m.k) or less, and the compression elastic modulus is 60% to 100%. Therefore, the polishing damage is small, and the polishing speed or flatness is also excellent.

(試驗結果3(實施例2、實施例5~實施例8及比較例5~比較例6)) (Test Results 3 (Example 2, Example 5 to Example 8 and Comparative Example 5 to Comparative Example 6))

在實施例2、實施例5~實施例8及比較例5~比較例6中,在使氣泡率大致固定的基礎上,改變第1中空體及第2中空體的比率,來評價研磨速度、研磨損傷、凹陷深度。 In the second embodiment, the fifth embodiment, the eighth embodiment, the comparative example 5, and the comparative example 6, the ratio of the first hollow body and the second hollow body was changed, and the polishing rate was evaluated. Grind damage, depth of depression.

其結果,比較例5、比較例6的研磨墊中,熱導率均高,且產生大量的研磨損傷。另外,比較例5的研磨墊中,由於tanδ亦小, 因此研磨速度亦差。另一方面,實施例2、實施例5~實施例8的研磨墊中,tanδ為0.130~0.270的範圍內,熱導率為0.10W/(m.k)以下,且壓縮彈性模數為60%~100%,因此研磨損傷少,研磨速度或平坦性亦優異。 As a result, in the polishing pads of Comparative Example 5 and Comparative Example 6, the thermal conductivity was high, and a large amount of polishing damage occurred. Further, in the polishing pad of Comparative Example 5, since tan δ was also small, Therefore, the grinding speed is also poor. On the other hand, in the polishing pads of Example 2 and Examples 5 to 8, the tan δ was in the range of 0.130 to 0.270, the thermal conductivity was 0.10 W/(m.k) or less, and the compression elastic modulus was 60. %~100%, so the grinding damage is small, and the polishing speed or flatness is also excellent.

(試驗結果4(實施例9~實施例10及比較例7~比較例8)) (Test result 4 (Example 9 to Example 10 and Comparative Example 7 to Comparative Example 8))

試驗結果1~試驗結果3的結果判定,藉由將tanδ、熱導率、壓縮彈性模數設為特定範圍,而可獲得減少研磨損傷的產生,研磨速度或凹陷亦優異的研磨墊。因此,繼而改變樹脂的種類進行同樣的試驗。具體而言,對作為市售品的IC1000(註冊商標)(霓塔哈斯股份有限公司製造 包含中空體)(比較例7)、根據日本專利第3013105號的例1所記載的製造方法而製造的研磨墊(比較例8)、除了使用大小不同的2種中空體以外根據日本專利第3013105號的例1所記載的製造方法而製造的研磨墊(實施例9)、及由與實施例1~實施例8不同的樹脂製造的研磨墊(實施例10),評價研磨速度、研磨損傷、凹陷。 As a result of the test result 1 to the test result 3, it is judged that the tan δ, the thermal conductivity, and the compression elastic modulus are set to a specific range, and it is possible to obtain a polishing pad which is less likely to cause polishing damage and which is excellent in polishing rate or depression. Therefore, the same test was carried out by changing the kind of the resin. Specifically, the IC 1000 (registered trademark) (manufactured by Nitagase Co., Ltd., including a hollow body) (Comparative Example 7) and the production method described in Example 1 of Japanese Patent No. 3013105 are manufactured. a polishing pad (Comparative Example 8), a polishing pad manufactured according to the production method described in Example 1 of Japanese Patent No. 3013105, and a polishing pad (Comparative Example 9), and the same as Example 1 except that two types of hollow bodies having different sizes are used. ~In Example 8, a polishing pad made of a different resin (Example 10) was evaluated for polishing rate, polishing damage, and dent.

其結果,在比較例7、比較例8中,熱導率高,tanδ亦小,因此產生大量的研磨損傷。另外,研磨速度亦小,觀察到大的凹陷且平坦性亦差。另一方面,實施例9~實施例10的研磨墊中,tanδ為0.130~0.270的範圍內,熱導率為0.10W/(m.k)以下,且壓縮彈性模數為60%~100%,因此研磨損傷少,研磨速度或凹陷亦優異。根據所述結果判定,即便改變樹脂的種類,本發明的效果 亦可藉由將tanδ、熱導率、壓縮彈性模數設為本發明的範圍內而獲得。 As a result, in Comparative Example 7 and Comparative Example 8, since the thermal conductivity was high and tan δ was also small, a large amount of polishing damage occurred. In addition, the polishing rate was also small, and large depressions were observed and the flatness was also poor. On the other hand, in the polishing pads of Examples 9 to 10, the tan δ was in the range of 0.130 to 0.270, the thermal conductivity was 0.10 W/(m.k) or less, and the compression elastic modulus was 60% to 100%. Therefore, the grinding damage is small, and the polishing speed or the depression is also excellent. According to the results, it is determined that the effect of the present invention is changed even if the kind of the resin is changed. It can also be obtained by setting tan δ, thermal conductivity, and compression elastic modulus within the range of the present invention.

[產業上之可利用性] [Industrial availability]

本發明的研磨墊可使在研磨加工時所產生的熱集中在研磨面附近,因此研磨表面容易軟質化。因此,可改善因在研磨加工時局部所產生的異物引起的研磨損傷的問題。另外,可提高研磨速度。而且,整個研磨墊可維持一定的硬度,因此可確保一定的平坦性,並可減少凹陷。因此,本發明的研磨墊及其製造方法具有產業上之可利用性。 The polishing pad of the present invention can concentrate the heat generated during the polishing process in the vicinity of the polishing surface, so that the polishing surface is easily softened. Therefore, the problem of polishing damage due to foreign matter generated locally during the grinding process can be improved. In addition, the polishing rate can be increased. Moreover, the entire polishing pad can maintain a certain hardness, thereby ensuring a certain flatness and reducing the depression. Therefore, the polishing pad of the present invention and the method of manufacturing the same have industrial applicability.

Claims (11)

一種研磨墊,其具備具有聚胺基甲酸酯樹脂片的研磨層,所述聚胺基甲酸酯樹脂片包含大致球狀的氣泡,且所述聚胺基甲酸酯樹脂片具有0.10W/(m.k)以下的熱導率,所述聚胺基甲酸酯樹脂片在45℃、初始負荷為200g、應變範圍為0.1%~0.5%、測定頻率為1.6Hz、拉伸模式下的損耗彈性模數相對於儲存彈性模數的比例,為0.130~0.270的範圍內,且所述聚胺基甲酸酯樹脂片的壓縮彈性模數為60%~100%。 A polishing pad comprising an abrasive layer having a polyurethane resin sheet, the polyurethane resin sheet comprising substantially spherical bubbles, and the polyurethane resin sheet having 0.10 W / (m.k) or less, the polyurethane resin sheet at 45 ° C, initial load of 200 g, strain range of 0.1% to 0.5%, measurement frequency of 1.6 Hz, tensile mode The ratio of the loss elastic modulus to the storage elastic modulus is in the range of 0.130 to 0.270, and the compression modulus of the polyurethane resin sheet is 60% to 100%. 如申請專利範圍第1項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片包含:平均粒徑為70μm~150μm的第1中空體、與平均粒徑為5μm~60μm的第2中空體。 The polishing pad according to claim 1, wherein the polyurethane resin sheet comprises: a first hollow body having an average particle diameter of 70 μm to 150 μm, and a second hollow body having an average particle diameter of 5 μm to 60 μm. Hollow body. 如申請專利範圍第2項所述之研磨墊,其中以5:95~80:20的質量比包含所述第1中空體與所述第2中空體。 The polishing pad according to claim 2, wherein the first hollow body and the second hollow body are contained in a mass ratio of 5:95 to 80:20. 如申請專利範圍第1項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片的氣泡率為20%~60%。 The polishing pad according to claim 1, wherein the polyurethane resin sheet has a bubble ratio of 20% to 60%. 如申請專利範圍第1項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片的密度為0.50g/cm3~0.80g/cm3The polishing pad according to claim 1, wherein the polyurethane resin sheet has a density of 0.50 g/cm 3 to 0.80 g/cm 3 . 如申請專利範圍第1項所述之研磨墊,其中所述聚胺基甲酸酯樹脂片的D硬度為20度~70度。 The polishing pad according to claim 1, wherein the polyurethane resin sheet has a D hardness of 20 to 70 degrees. 如申請專利範圍第1項所述之研磨墊,其中作為構成所述聚胺基甲酸酯樹脂片的胺基甲酸酯樹脂的多元醇成分,包含數量平均分子量為500~950的聚四亞甲基二醇。 The polishing pad according to claim 1, wherein the polyol component constituting the urethane resin of the polyurethane resin sheet contains polytetrazol having a number average molecular weight of 500 to 950. Methyl diol. 一種研磨墊的製造方法,其用於製造如申請專利範圍第1項至第7項中任一項所述之研磨墊,所述製造方法包括如下步驟:至少將作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)、硬化劑(D)、平均粒徑為80μm~150μm的第1中空體、平均粒徑為5μm~60μm的第2中空體混合,而獲得成形體成形用混合液;及由所述成形體成形用混合液將聚胺基甲酸酯樹脂成形體成形,而獲得聚胺基甲酸酯樹脂片。 A method for producing a polishing pad, which is used for manufacturing a polishing pad according to any one of claims 1 to 7, wherein the manufacturing method comprises the steps of: at least a polyamine as a prepolymer The isocyanate-bonded isocyanate compound (A), the curing agent (D), the first hollow body having an average particle diameter of 80 μm to 150 μm, and the second hollow body having an average particle diameter of 5 μm to 60 μm are mixed to obtain a molded body. The polyurethane resin molded article is molded from the mixed solution for molding the molded body to obtain a polyurethane resin sheet. 如申請專利範圍第8項所述之研磨墊的製造方法,其中以5:95~80:20的質量比包含所述第1中空體與所述第2中空體。 The method for producing a polishing pad according to claim 8, wherein the first hollow body and the second hollow body are included in a mass ratio of 5:95 to 80:20. 如申請專利範圍第8項所述之研磨墊的製造方法,其中所述硬化劑(D)包含選自由多胺化合物(D-1)及多元醇化合物(D-2)所組成的組群的至少1種,且以所述聚胺基甲酸酯樹脂片的存在於硬化劑(D)中的活性氫基相對於作為預聚物的含有聚胺基甲酸酯鍵的異氰酸酯化合物(A)末端所存在的異氰酸酯基之當量比即r值成為0.75~1.30的方式,將各成分混合。 The method for producing a polishing pad according to claim 8, wherein the hardener (D) comprises a group selected from the group consisting of a polyamine compound (D-1) and a polyol compound (D-2). At least one, and the active hydrogen group present in the hardener (D) in the polyurethane resin sheet relative to the polyurethane bond-containing isocyanate compound (A) as a prepolymer The equivalent ratio of the isocyanate groups present at the end, that is, the r value is 0.75 to 1.30, and the components are mixed. 如申請專利範圍第8項所述之研磨墊的製造方法,其中進一步包括如下步驟:使聚異氰酸酯化合物(B)與多元醇化合物(C)反應,而獲得作為預聚物的所述含有聚胺基甲酸酯鍵的異氰酸酯化合物(A),且所述多元醇化合物(C)包含數量平均分子量為500~950的 聚四亞甲基二醇。 The method for producing a polishing pad according to claim 8, which further comprises the step of reacting the polyisocyanate compound (B) with the polyol compound (C) to obtain the polyamine-containing compound as a prepolymer. a isocyanate-bonded isocyanate compound (A), and the polyol compound (C) comprises a number average molecular weight of 500 to 950 Polytetramethylene glycol.
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