TWI614790B - 電漿處理裝置、系統及以隱藏偏向電極控制離子束的方法 - Google Patents
電漿處理裝置、系統及以隱藏偏向電極控制離子束的方法 Download PDFInfo
- Publication number
- TWI614790B TWI614790B TW104127791A TW104127791A TWI614790B TW I614790 B TWI614790 B TW I614790B TW 104127791 A TW104127791 A TW 104127791A TW 104127791 A TW104127791 A TW 104127791A TW I614790 B TWI614790 B TW I614790B
- Authority
- TW
- Taiwan
- Prior art keywords
- hidden
- ion beam
- electrode
- hole
- plasma
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 323
- 238000012545 processing Methods 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000000605 extraction Methods 0.000 claims abstract description 202
- 150000002500 ions Chemical class 0.000 claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 238000009826 distribution Methods 0.000 claims description 84
- 230000005499 meniscus Effects 0.000 claims description 27
- 238000003825 pressing Methods 0.000 claims 1
- 238000005421 electrostatic potential Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000011065 in-situ storage Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000036470 plasma concentration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000003116 impacting effect Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
- H01J27/024—Extraction optics, e.g. grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Combustion & Propulsion (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462048584P | 2014-09-10 | 2014-09-10 | |
| US62/048,584 | 2014-09-10 | ||
| US14/523,428 US9514912B2 (en) | 2014-09-10 | 2014-10-24 | Control of ion angular distribution of ion beams with hidden deflection electrode |
| US14/523,428 | 2014-10-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201611083A TW201611083A (zh) | 2016-03-16 |
| TWI614790B true TWI614790B (zh) | 2018-02-11 |
Family
ID=55438149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104127791A TWI614790B (zh) | 2014-09-10 | 2015-08-26 | 電漿處理裝置、系統及以隱藏偏向電極控制離子束的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9514912B2 (enExample) |
| JP (1) | JP6769952B2 (enExample) |
| KR (1) | KR101835654B1 (enExample) |
| CN (1) | CN107078010B (enExample) |
| TW (1) | TWI614790B (enExample) |
| WO (1) | WO2016040006A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6388520B2 (ja) * | 2014-10-17 | 2018-09-12 | 住友重機械イオンテクノロジー株式会社 | ビーム引出スリット構造、イオン源、及びイオン注入装置 |
| US9478399B2 (en) | 2015-03-27 | 2016-10-25 | Varian Semiconductor Equipment Associates, Inc. | Multi-aperture extraction system for angled ion beam |
| DE102016119437B4 (de) * | 2016-10-12 | 2024-05-23 | scia Systems GmbH | Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls |
| KR102673632B1 (ko) | 2016-12-06 | 2024-06-13 | 삼성전자주식회사 | 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법 |
| US9865433B1 (en) * | 2016-12-19 | 2018-01-09 | Varian Semiconductor Equipment Associats, Inc. | Gas injection system for ion beam device |
| US10074514B1 (en) * | 2017-09-08 | 2018-09-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for improved ion beam current |
| US10276340B1 (en) * | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
| US10325752B1 (en) * | 2018-03-27 | 2019-06-18 | Varian Semiconductor Equipment Associates, Inc. | Performance extraction set |
| US10468226B1 (en) * | 2018-09-21 | 2019-11-05 | Varian Semiconductor Equipment Associates, Inc. | Extraction apparatus and system for high throughput ion beam processing |
| US10886098B2 (en) * | 2018-11-20 | 2021-01-05 | Applied Materials, Inc. | Electrostatic filter and ion implanter having asymmetric electrostatic configuration |
| US11195703B2 (en) * | 2018-12-07 | 2021-12-07 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
| US11715621B2 (en) * | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
| US11056319B2 (en) * | 2019-07-29 | 2021-07-06 | Applied Materials, Inc. | Apparatus and system having extraction assembly for wide angle ion beam |
| US11791126B2 (en) * | 2019-08-27 | 2023-10-17 | Applied Materials, Inc. | Apparatus for directional processing |
| US11270864B2 (en) * | 2020-03-24 | 2022-03-08 | Applied Materials, Inc. | Apparatus and system including extraction optics having movable blockers |
| US11948781B2 (en) * | 2020-06-16 | 2024-04-02 | Applied Materials, Inc. | Apparatus and system including high angle extraction optics |
| US11495430B2 (en) * | 2020-07-15 | 2022-11-08 | Applied Materials, Inc. | Tunable extraction assembly for wide angle ion beam |
| US11361935B2 (en) | 2020-11-07 | 2022-06-14 | Applied Materials, Inc. | Apparatus and system including high angle extraction optics |
| EP4434073A1 (en) | 2021-11-19 | 2024-09-25 | DH Technologies Development Pte. Ltd. | Method for noise reduction and ion rate estimation using an analog detection system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200952021A (en) * | 2008-04-24 | 2009-12-16 | Axcelis Tech Inc | Ion source with adjustable aperture |
| US7767977B1 (en) * | 2009-04-03 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
| CN103094029A (zh) * | 2011-10-31 | 2013-05-08 | 日新离子机器株式会社 | 离子束引出电极和离子源 |
| TW201324592A (zh) * | 2011-11-02 | 2013-06-16 | Varian Semiconductor Equipment | 高產量離子植入機 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02158042A (ja) * | 1988-12-09 | 1990-06-18 | Fuji Electric Co Ltd | イオン源装置 |
| JPH02253548A (ja) * | 1989-03-28 | 1990-10-12 | Nippon Seiko Kk | ガスイオン源及びガスイオン源を用いたイオンビーム加工装置 |
| EP2523207A3 (en) | 2002-10-30 | 2015-08-26 | Mapper Lithography IP B.V. | Electron beam generator |
| WO2008000836A2 (en) * | 2006-06-30 | 2008-01-03 | Nordiko Technical Services Limited | Apparatus for accelerating an ion beam |
| US20080132046A1 (en) | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| US7867409B2 (en) | 2007-03-29 | 2011-01-11 | Tokyo Electron Limited | Control of ion angular distribution function at wafer surface |
| US8188445B2 (en) | 2009-04-03 | 2012-05-29 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US20120104274A1 (en) * | 2009-07-16 | 2012-05-03 | Canon Anelva Corporation | Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device |
| US8461030B2 (en) * | 2009-11-17 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controllably implanting workpieces |
| US8288741B1 (en) * | 2011-08-16 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for three dimensional ion processing |
| JP6238978B2 (ja) | 2012-06-29 | 2017-11-29 | エフ・イ−・アイ・カンパニー | 多種イオン源 |
| US8497486B1 (en) * | 2012-10-15 | 2013-07-30 | Varian Semiconductor Equipment Associates, Inc. | Ion source having a shutter assembly |
| US9293301B2 (en) * | 2013-12-23 | 2016-03-22 | Varian Semiconductor Equipment Associates, Inc. | In situ control of ion angular distribution in a processing apparatus |
| US9514918B2 (en) * | 2014-09-30 | 2016-12-06 | Applied Materials, Inc. | Guard aperture to control ion angular distribution in plasma processing |
-
2014
- 2014-10-24 US US14/523,428 patent/US9514912B2/en active Active
-
2015
- 2015-08-26 TW TW104127791A patent/TWI614790B/zh active
- 2015-08-28 JP JP2017513195A patent/JP6769952B2/ja active Active
- 2015-08-28 CN CN201580059947.2A patent/CN107078010B/zh active Active
- 2015-08-28 KR KR1020177009398A patent/KR101835654B1/ko active Active
- 2015-08-28 WO PCT/US2015/047356 patent/WO2016040006A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200952021A (en) * | 2008-04-24 | 2009-12-16 | Axcelis Tech Inc | Ion source with adjustable aperture |
| US7767977B1 (en) * | 2009-04-03 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
| CN103094029A (zh) * | 2011-10-31 | 2013-05-08 | 日新离子机器株式会社 | 离子束引出电极和离子源 |
| TW201324592A (zh) * | 2011-11-02 | 2013-06-16 | Varian Semiconductor Equipment | 高產量離子植入機 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101835654B1 (ko) | 2018-03-07 |
| CN107078010B (zh) | 2019-04-05 |
| TW201611083A (zh) | 2016-03-16 |
| US9514912B2 (en) | 2016-12-06 |
| US20160071693A1 (en) | 2016-03-10 |
| WO2016040006A1 (en) | 2016-03-17 |
| KR20170052638A (ko) | 2017-05-12 |
| JP2017533542A (ja) | 2017-11-09 |
| CN107078010A (zh) | 2017-08-18 |
| JP6769952B2 (ja) | 2020-10-14 |
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