JP6769952B2 - プラズマ処理装置及びシステム及びイオンビームを制御する方法 - Google Patents
プラズマ処理装置及びシステム及びイオンビームを制御する方法 Download PDFInfo
- Publication number
- JP6769952B2 JP6769952B2 JP2017513195A JP2017513195A JP6769952B2 JP 6769952 B2 JP6769952 B2 JP 6769952B2 JP 2017513195 A JP2017513195 A JP 2017513195A JP 2017513195 A JP2017513195 A JP 2017513195A JP 6769952 B2 JP6769952 B2 JP 6769952B2
- Authority
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- Japan
- Prior art keywords
- aperture
- ion beam
- hidden
- plasma
- deflection electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 312
- 238000012545 processing Methods 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 118
- 150000002500 ions Chemical class 0.000 claims description 115
- 238000000605 extraction Methods 0.000 claims description 74
- 238000009826 distribution Methods 0.000 claims description 64
- 230000005499 meniscus Effects 0.000 claims description 18
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 16
- 238000005421 electrostatic potential Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000869 ion-assisted deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000755 effect on ion Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000036967 uncompetitive effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
- H01J27/024—Extraction optics, e.g. grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Combustion & Propulsion (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462048584P | 2014-09-10 | 2014-09-10 | |
| US62/048,584 | 2014-09-10 | ||
| US14/523,428 | 2014-10-24 | ||
| US14/523,428 US9514912B2 (en) | 2014-09-10 | 2014-10-24 | Control of ion angular distribution of ion beams with hidden deflection electrode |
| PCT/US2015/047356 WO2016040006A1 (en) | 2014-09-10 | 2015-08-28 | Control of ion angular distribution of ion beams with hidden deflection electrode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017533542A JP2017533542A (ja) | 2017-11-09 |
| JP2017533542A5 JP2017533542A5 (enExample) | 2018-09-20 |
| JP6769952B2 true JP6769952B2 (ja) | 2020-10-14 |
Family
ID=55438149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017513195A Active JP6769952B2 (ja) | 2014-09-10 | 2015-08-28 | プラズマ処理装置及びシステム及びイオンビームを制御する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9514912B2 (enExample) |
| JP (1) | JP6769952B2 (enExample) |
| KR (1) | KR101835654B1 (enExample) |
| CN (1) | CN107078010B (enExample) |
| TW (1) | TWI614790B (enExample) |
| WO (1) | WO2016040006A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6388520B2 (ja) * | 2014-10-17 | 2018-09-12 | 住友重機械イオンテクノロジー株式会社 | ビーム引出スリット構造、イオン源、及びイオン注入装置 |
| US9478399B2 (en) | 2015-03-27 | 2016-10-25 | Varian Semiconductor Equipment Associates, Inc. | Multi-aperture extraction system for angled ion beam |
| DE102016119437B4 (de) * | 2016-10-12 | 2024-05-23 | scia Systems GmbH | Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls |
| KR102673632B1 (ko) | 2016-12-06 | 2024-06-13 | 삼성전자주식회사 | 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법 |
| US9865433B1 (en) * | 2016-12-19 | 2018-01-09 | Varian Semiconductor Equipment Associats, Inc. | Gas injection system for ion beam device |
| US10074514B1 (en) * | 2017-09-08 | 2018-09-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for improved ion beam current |
| US10276340B1 (en) * | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
| US10325752B1 (en) * | 2018-03-27 | 2019-06-18 | Varian Semiconductor Equipment Associates, Inc. | Performance extraction set |
| US10468226B1 (en) * | 2018-09-21 | 2019-11-05 | Varian Semiconductor Equipment Associates, Inc. | Extraction apparatus and system for high throughput ion beam processing |
| US10886098B2 (en) * | 2018-11-20 | 2021-01-05 | Applied Materials, Inc. | Electrostatic filter and ion implanter having asymmetric electrostatic configuration |
| US11195703B2 (en) | 2018-12-07 | 2021-12-07 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
| US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
| US11056319B2 (en) * | 2019-07-29 | 2021-07-06 | Applied Materials, Inc. | Apparatus and system having extraction assembly for wide angle ion beam |
| US11791126B2 (en) | 2019-08-27 | 2023-10-17 | Applied Materials, Inc. | Apparatus for directional processing |
| US11270864B2 (en) * | 2020-03-24 | 2022-03-08 | Applied Materials, Inc. | Apparatus and system including extraction optics having movable blockers |
| US11948781B2 (en) * | 2020-06-16 | 2024-04-02 | Applied Materials, Inc. | Apparatus and system including high angle extraction optics |
| US11495430B2 (en) * | 2020-07-15 | 2022-11-08 | Applied Materials, Inc. | Tunable extraction assembly for wide angle ion beam |
| US11361935B2 (en) * | 2020-11-07 | 2022-06-14 | Applied Materials, Inc. | Apparatus and system including high angle extraction optics |
| CN118556276A (zh) | 2021-11-19 | 2024-08-27 | Dh科技发展私人贸易有限公司 | 用于使用模拟检测系统进行降噪和离子速率估计的方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02158042A (ja) * | 1988-12-09 | 1990-06-18 | Fuji Electric Co Ltd | イオン源装置 |
| JPH02253548A (ja) * | 1989-03-28 | 1990-10-12 | Nippon Seiko Kk | ガスイオン源及びガスイオン源を用いたイオンビーム加工装置 |
| KR101077098B1 (ko) | 2002-10-30 | 2011-10-26 | 마퍼 리쏘그라피 아이피 비.브이. | 전자 빔 노출 시스템 |
| JP5337028B2 (ja) * | 2006-06-30 | 2013-11-06 | ノルディコ テクニカル サーヴィシズ リミテッド | 装置 |
| US20080132046A1 (en) | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| US7867409B2 (en) | 2007-03-29 | 2011-01-11 | Tokyo Electron Limited | Control of ion angular distribution function at wafer surface |
| US8089052B2 (en) * | 2008-04-24 | 2012-01-03 | Axcelis Technologies, Inc. | Ion source with adjustable aperture |
| US8188445B2 (en) | 2009-04-03 | 2012-05-29 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US7767977B1 (en) * | 2009-04-03 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| JP5216918B2 (ja) * | 2009-07-16 | 2013-06-19 | キヤノンアネルバ株式会社 | イオンビーム発生装置、基板処理装置及び電子デバイスの製造方法 |
| US20110011534A1 (en) | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
| US8461030B2 (en) * | 2009-11-17 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controllably implanting workpieces |
| US8288741B1 (en) * | 2011-08-16 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for three dimensional ion processing |
| JP2013098003A (ja) * | 2011-10-31 | 2013-05-20 | Nissin Ion Equipment Co Ltd | イオンビーム引出し用電極およびこれを備えたイオン源 |
| US9437392B2 (en) * | 2011-11-02 | 2016-09-06 | Varian Semiconductor Equipment Associates, Inc. | High-throughput ion implanter |
| JP6238978B2 (ja) | 2012-06-29 | 2017-11-29 | エフ・イ−・アイ・カンパニー | 多種イオン源 |
| US8497486B1 (en) * | 2012-10-15 | 2013-07-30 | Varian Semiconductor Equipment Associates, Inc. | Ion source having a shutter assembly |
| US9293301B2 (en) * | 2013-12-23 | 2016-03-22 | Varian Semiconductor Equipment Associates, Inc. | In situ control of ion angular distribution in a processing apparatus |
| US9514918B2 (en) * | 2014-09-30 | 2016-12-06 | Applied Materials, Inc. | Guard aperture to control ion angular distribution in plasma processing |
-
2014
- 2014-10-24 US US14/523,428 patent/US9514912B2/en active Active
-
2015
- 2015-08-26 TW TW104127791A patent/TWI614790B/zh active
- 2015-08-28 CN CN201580059947.2A patent/CN107078010B/zh active Active
- 2015-08-28 JP JP2017513195A patent/JP6769952B2/ja active Active
- 2015-08-28 KR KR1020177009398A patent/KR101835654B1/ko active Active
- 2015-08-28 WO PCT/US2015/047356 patent/WO2016040006A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN107078010A (zh) | 2017-08-18 |
| US9514912B2 (en) | 2016-12-06 |
| CN107078010B (zh) | 2019-04-05 |
| WO2016040006A1 (en) | 2016-03-17 |
| KR101835654B1 (ko) | 2018-03-07 |
| US20160071693A1 (en) | 2016-03-10 |
| TWI614790B (zh) | 2018-02-11 |
| KR20170052638A (ko) | 2017-05-12 |
| JP2017533542A (ja) | 2017-11-09 |
| TW201611083A (zh) | 2016-03-16 |
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