TWI613668B - Dual inline memory module with temperature-sensing scenario mode - Google Patents

Dual inline memory module with temperature-sensing scenario mode Download PDF

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TWI613668B
TWI613668B TW105116605A TW105116605A TWI613668B TW I613668 B TWI613668 B TW I613668B TW 105116605 A TW105116605 A TW 105116605A TW 105116605 A TW105116605 A TW 105116605A TW I613668 B TWI613668 B TW I613668B
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light
circuit board
temperature
signal
module circuit
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TW105116605A
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TW201742058A (en
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甯樹樑
鄭富耘
張丁儀
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海盜船電子股份有限公司
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Priority to CN201610380768.5A priority patent/CN107437429B/en
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

揭示一種感溫情境模式雙列記憶體模組。模組電路板上設置有揮發性記憶體元件與電子抹除式可複寫唯讀記憶體元件,模組電路板之發光側設置有發光二極體元件與情境發光控制元件。導光條以非直接設置關係放置於模組電路板之發光側上。扣接式散熱片之相互扣接,以致使導光條以夾合方式固定。其中,情境發光控制元件之電源共享搭載於發光二極體元件之電源供應系統,情境發光控制元件之訊號共享搭載於電子抹除式可複寫唯讀記憶體元件之訊號連接系統。因此,由情境發光控制元件控制的發光情境表現將一致於用於調整記憶體充電頻率之感測溫度,而不會有溫度感測差異的錯誤表現。 A dual-rank memory module is disclosed for a temperature-sensing mode. The module circuit board is provided with a volatile memory element and an electronic erasable rewritable read-only memory element, and the light emitting side of the module circuit board is provided with a light emitting diode element and a situational light emitting control element. The light guide bar is placed on the light-emitting side of the module circuit board in an indirect setting relationship. The fastening heat sinks are fastened to each other, so that the light guide bar is fixed in a clamping manner. Among them, the power supply of the situational light emitting control element is shared by the power supply system of the light emitting diode element, and the signal of the situational light emitting control element is shared by the signal connection system of the electronic erasable rewritable read-only memory element. Therefore, the lighting situation performance controlled by the situation lighting control element will be consistent with the sensing temperature used to adjust the memory charging frequency, and there will be no false performance of temperature sensing difference.

Description

感溫情境模式雙列記憶體模組 Temperature Sensing Mode Dual Memory Module

本發明係有關於記憶體模組,特別係有關於一種感溫情境模式雙列記憶體模組。 The invention relates to a memory module, and more particularly to a dual-row memory module with a temperature-sensing mode.

習知記憶體模組係包含一模組電路板以及複數個接合於該模組電路板之揮發性記憶體元件,用以插接至一電腦系統之記憶體插槽。當記憶體工作頻率往高頻化發展,記憶體模組具有更高的資料傳輸速率與更高的電量消耗,同時記憶體模組變成更容易積熱而導致電腦系統不穩定。當記憶體模組的工作溫度越來越高而超過容許值時,記憶體模組的效能便顯著的降低,同時也增加了模組保持資料的軟錯誤率(soft error rate,SER)。因此,記憶體模組的工作溫度被期望能準確的感測到並加以應用。 The conventional memory module includes a module circuit board and a plurality of volatile memory components connected to the module circuit board for plugging into a memory slot of a computer system. When the operating frequency of the memory develops to a high frequency, the memory module has a higher data transmission rate and higher power consumption, and at the same time, the memory module becomes more prone to heat buildup and causes the computer system to become unstable. When the operating temperature of the memory module is getting higher and higher than the allowable value, the performance of the memory module is significantly reduced, and the soft error rate (SER) of the module holding data is also increased. Therefore, the operating temperature of the memory module is expected to be accurately sensed and applied.

記憶體模組內增設發光二極體元件為既有技術,然而已知的發光結構僅能粗略地表現出高溫與正常溫的簡單變化,難以達到精準地多樣態發光感溫情境之可程式調控變化。在本國新型專利編號TW-M448772「動態隨機存取記憶體」中,揭露的動態隨機存取記憶體包含一模組板本體、複數個發光二極體元件以及一半透明之導光條。發光二極體元件設置於本體並且本體電性 連接。導光條係設置於本體並覆蓋發光二極體元件,並且發光二極體元件之光線係能穿透出導光條。其中,導光條的具體設置關是利用導光條之剖槽直接夾持模組板本體,而導光條體之剖槽內側壁係形成至少一凹槽,發光二極體元件係容置於凹槽內。此外,用以控制發光二極體元件之發光頻率的控制器元件係設置於該模組板本體。並且,控制器元件具有一溫度感應器,溫度感應器能感應溫度並轉換成一訊號傳送至控制器元件,並進一步驅使控制器元件調整發光二極體元件之發光頻率,發光二極體元件藉由不同之發光頻率以提醒使用者該動態隨機存取記憶體之溫度是否過熱。據上可知,習知發光型動態隨機存取記憶體的發光控制是採用獨立系統,需要在模組板本體內增加獨立溫度感應系統、獨立訊號系統與獨立電源系統;如此,不僅增加了動態隨機存取記憶體的產品製造成本,並且用以控制發光頻率的新溫度感應系統與原本動態隨機存取記憶體的用以控制運算頻率的溫度感應系統為不同系統,溫度感測位置、感測元件結構的不相同皆會造成溫度感測數值的誤差,其發光型態只能粗略表現出是否過熱,而無法很準確將記憶體模組的工作溫度共享於發光系統,便難以運用於各式感溫情境模式的正確調整變化。 It is an existing technology to add a light-emitting diode element in the memory module. However, the known light-emitting structure can only roughly show the simple change of high temperature and normal temperature, and it is difficult to achieve the programmable control of precise and varied light-emitting temperature scenarios. Variety. In the domestic new patent No. TW-M448772 "Dynamic Random Access Memory", the disclosed dynamic random access memory includes a module board body, a plurality of light emitting diode elements, and a semi-transparent light guide strip. The light emitting diode element is arranged on the body and the body is electrically connection. The light guide bar is arranged on the body and covers the light emitting diode element, and the light of the light emitting diode element can penetrate the light guide bar. Wherein, the specific setting of the light guide bar is to directly clamp the module board body by using the cut groove of the light guide bar, and the inner side wall of the cut groove of the light guide bar forms at least one groove, and the light emitting diode element is housed. In the groove. In addition, a controller element for controlling the light emitting frequency of the light emitting diode element is disposed on the module board body. In addition, the controller element has a temperature sensor, which can sense the temperature and convert it into a signal to be transmitted to the controller element, and further drive the controller element to adjust the light emitting frequency of the light emitting diode element. Different luminous frequencies remind users whether the temperature of the dynamic random access memory is too hot. According to the above, the lighting control of the conventional light-emitting dynamic random access memory uses an independent system, and it is necessary to add an independent temperature sensing system, an independent signal system and an independent power system in the module board body; in this way, not only the dynamic randomness is increased. The new temperature sensing system for accessing the memory to manufacture products and controlling the luminous frequency is different from the original temperature random sensing memory temperature control system for controlling the operating frequency. The temperature sensing position and sensing element are different. The difference in structure will cause the error of the temperature sensing value. Its light-emitting type can only roughly indicate whether it is overheating, and it cannot accurately share the operating temperature of the memory module with the light-emitting system, which is difficult to apply to various types of sensors. Correct adjustment and change of the warm situational mode.

為了解決上述之問題,本發明之主要目的係在於提供一種感溫情境模式雙列記憶體模組,記憶體模組的工作溫度能準確的感測到並加以應用使記憶體模組表現出正確的已定義感溫 情境。 In order to solve the above problems, the main purpose of the present invention is to provide a dual-row memory module with a temperature-sensing mode. The operating temperature of the memory module can be accurately sensed and applied to make the memory module behave correctly. Defined temperature Situation.

本發明之次一目的係在於提供一種感溫情境模式雙列記憶體模組,其情境發光控制元件之訊號係以特定共享搭載方式達到降低製造成本之功效。 A second object of the present invention is to provide a temperature-sensing dual-memory memory module in which the signals of the light-emitting control elements of the environment are implemented in a specific shared loading mode to reduce the manufacturing cost.

本發明之再一目的係在於提供一種感溫情境模式雙列記憶體模組,利用複數個扣接式散熱片的相互組合,同時使得導光條係以非直接設置關係放置於模組電路板上,達到導光條的簡易式組裝與拆解並防止損害發光二極體元件之功效。 Another object of the present invention is to provide a dual-line memory module with a temperature-sensing mode, which uses a combination of a plurality of buckle-type heat sinks, and at the same time enables the light guide bar to be placed on the module circuit board in an indirect setting relationship In addition, the light guide bar can be easily assembled and disassembled, and the effect of preventing the light emitting diode element from being damaged is achieved.

本發明的目的及解決其技術問題是採用以下技術方案來實現的。本發明揭示一種感溫情境模式雙列記憶體模組,包含一模組電路板、一導光條以及複數個扣接式散熱片。該模組電路板之一表面係設置有複數個第一揮發性記憶體元件與複數個第二揮發性記憶體元件,該模組電路板在該些第一揮發性記憶體元件與該些第二揮發性記憶體元件之間係更設置有一電子抹除式可複寫唯讀記憶體元件(EEPROM),該模組電路板係具有一插接側與一發光側,該插接側係排列有複數個接觸指,該發光側係設置有複數個發光二極體元件與一情境發光控制元件。該導光條係以非直接設置關係放置於該模組電路板之該發光側上。該些扣接式散熱片係蓋合於該模組電路板之該表面與另一相對表面,利用該些扣接式散熱片之相互扣接,以致使該導光條以夾合方式固定。其中,該情境發光控制元件之電源係共享搭載於該些發光二極體元件之電源供應系統,該情境發光控制元件之訊號係共享搭 載於該電子抹除式可複寫唯讀記憶體元件之訊號連接系統。 The object of the present invention and its technical problems are solved by using the following technical solutions. The invention discloses a dual-row memory module with a temperature-sensing mode, which includes a module circuit board, a light guide bar, and a plurality of buckle-type heat sinks. One surface of the module circuit board is provided with a plurality of first volatile memory elements and a plurality of second volatile memory elements. The module circuit board is disposed between the first volatile memory elements and the first volatile memory elements. An electronic erasable rewritable read-only memory element (EEPROM) is arranged between the two volatile memory elements. The module circuit board has a plug-in side and a light-emitting side, and the plug-in side is arranged with A plurality of contact fingers, the light-emitting side is provided with a plurality of light-emitting diode elements and a situation light-emitting control element. The light guide bar is placed on the light emitting side of the module circuit board in an indirect setting relationship. The buckle-type heat sinks are covered on the surface and the other opposite surface of the module circuit board, and the buckle-type heat sinks are fastened to each other, so that the light guide bar is fixed in a clamping manner. Among them, the power supply of the light emitting control element of the situation is shared by the power supply system mounted on the light emitting diode elements, and the signal of the light emitting control element of the situation is shared. A signal connection system included in the electronic erasable rewritable read-only memory element.

本發明的目的及解決其技術問題還可採用以下技術措施進一步實現。 The object of the present invention and its technical problems can be further achieved by adopting the following technical measures.

在前述感溫情境模式雙列記憶體模組中,係可另包含一頂蓋,以非直接設置關係可放置於該導光條上,利用該些扣接式散熱片之相互扣接,以致使該頂蓋亦以夾合方式固定。藉此,增添整體金屬外觀的一致性並確保該導光條之固定。 In the above-mentioned temperature-sensing scenario mode dual-row memory module, the system may further include a top cover, which can be placed on the light guide bar in an indirect setting relationship, and the buckle-type heat sinks are used to fasten each other, The top cover is also fixed in a clamping manner. This increases the consistency of the overall metal appearance and ensures the fixation of the light guide bar.

在前述感溫情境模式雙列記憶體模組中,該模組電路板之該發光側係可形成有複數個凸部而為不規則狀,該些發光二極體元件係可以斜向照射方式設置於該些凸部,並且該導光條係可具有一對應該發光側之不規則側緣輪廓。藉此,達到該導光條的更均勻發光之功效。 In the above-mentioned temperature-sensing mode dual-row memory module, the light emitting side of the circuit board of the module may be formed with a plurality of convex portions to be irregular, and the light emitting diode elements may be obliquely illuminated. The light guide strips are disposed on the convex portions, and the light guide strips may have a pair of irregular side edge profiles corresponding to the light emitting sides. Thereby, the effect of more uniform light emission of the light guide bar is achieved.

在前述感溫情境模式雙列記憶體模組中,每一之該些扣接式散熱片之內側面係可形成有一導熱層與一反射層,其中該導熱層係可熱傳導貼觸於該些第一揮發性記憶體元件與該些第二揮發性記憶體元件,該反射層係可遮蓋該些發光二極體元件。因此,該導光條可不必要覆蓋該些發光二極體元件,且該些發光二極體元件發出之光線仍可高效率地導射至該導光條。 In the above-mentioned temperature-sensing scenario mode dual-row memory module, a thermally conductive layer and a reflective layer may be formed on the inner side of each of the buckle-type heat sinks, wherein the thermally conductive layer may be thermally conductively attached to the The first volatile memory element and the second volatile memory elements, and the reflective layer can cover the light emitting diode elements. Therefore, the light guide bar may not necessarily cover the light emitting diode elements, and the light emitted by the light emitting diode elements may still be efficiently guided to the light guide bar.

在前述感溫情境模式雙列記憶體模組中,該電子抹除式可複寫唯讀記憶體元件係可內建有溫度感測器。因此,溫度感測器感測溫度經轉換為訊號之後亦可被該情境發光控制元件應用,該情境發光控制元件不需要內建或連接有溫度感測器。 In the above-mentioned temperature-sensing scenario mode dual-row memory module, the electronic erasable rewritable read-only memory element may have a temperature sensor built-in. Therefore, after the temperature sensor converts the temperature into a signal, it can also be applied by the context light-emitting control element. The context light-emitting control element does not need to be built-in or connected with a temperature sensor.

在前述感溫情境模式雙列記憶體模組中,該電子抹除式可複寫唯讀記憶體元件之訊號連接系統係可包含複數個訊號匯流排,其係可連接該電子抹除式可複寫唯讀記憶體元件之複數個第一訊號端點與該些接觸指中之複數個溫度訊號傳輸指,並且該模組電路板係可具有複數個共享搭載訊號線與複數個共享搭載電源線,該些共享搭載訊號線係可連接該情境發光控制元件之複數個第二訊號端點至該些訊號匯流排,該些共享搭載電源線係可連接該情境發光控制元件之複數個電源端點至該電源供應系統。 In the above-mentioned temperature-sensing mode dual-row memory module, the signal connection system of the electronic erasable rewritable read-only memory element may include a plurality of signal buses, which may be connected to the electronic erasable rewritable rewritable The plurality of first signal terminals of the read-only memory element and the plurality of temperature signal transmission fingers in the contact fingers, and the module circuit board may have a plurality of shared-mounted signal lines and a plurality of shared-mounted power lines, The shared-carrying signal lines are capable of connecting a plurality of second signal endpoints of the context light-emitting control element to the signal buses, and the shared-carrying power lines are capable of connecting the plurality of power-source endpoints of the context light-emitting control element to The power supply system.

在前述感溫情境模式雙列記憶體模組中,該電源供應系統係可包含一使第一工作電壓轉換為一第二工作電壓之變壓器元件以及一電源匯流排,該電源匯流排係可以該第一工作電壓傳輸方式由該些接觸指中之複數個電源傳輸指至連接該變壓器元件,並且該些共享搭載電源線係可以該第二工作電壓傳輸方式由該變壓器元件連接,其中該第二工作電壓係可大於該第一工作電壓。因此,該情境發光控制元件之工作電壓可以大於該些揮發性記憶體元件之工作電壓。 In the above-mentioned temperature-sensing scenario mode dual-row memory module, the power supply system may include a transformer element that converts the first working voltage to a second working voltage and a power bus. The power bus may be The first working voltage transmission mode is connected to the transformer element by a plurality of power transmission fingers in the contact fingers, and the shared power supply lines can be connected by the transformer element in the second working voltage transmission mode, wherein the second The operating voltage may be greater than the first operating voltage. Therefore, the operating voltage of the situational light-emitting control element can be greater than the operating voltage of the volatile memory elements.

藉由上述的技術手段,本發明提供一種雙列記憶體模組,其針對發光二極體元件與電子抹除式可複寫唯讀記憶體元件進一步擴大應用。在習知非發光型記憶體模組的標準結構中,電子抹除式可複寫唯讀記憶體元件內建有溫度感測器,透過電子抹除式可複寫唯讀記憶體元件對記憶體模組的工作溫度進行監 控。本發明進一步利用由監控到溫度轉換之訊號經由該電子抹除式可複寫唯讀記憶體元件連接之訊號匯流排與該模組電路板之該些溫度訊號傳輸指輸出至一電腦系統,藉此選定適合的發光感溫情境,再回傳至該情境發光控制元件。因此,本發明之雙列記憶體模組可以驅動該些發光二極體元件以表現出各種發光顏色、閃光頻率、發光強度等情境變化,同時也可對風扇速度進行同步調整。故,使用者能夠正確地判斷該記憶體模組是否在高負載過熱狀態,這對於電腦系統的穩定與高效能的追求兩者平衡達成目標將是非常有幫助的。 By means of the above-mentioned technical means, the present invention provides a dual-row memory module, which further expands applications for light-emitting diode elements and electronic erasable rewritable read-only memory elements. In the standard structure of the conventional non-luminous memory module, the electronic erasable rewritable read-only memory element has a built-in temperature sensor, and the electronic erasable rewritable read-only memory element Group working temperature monitoring control. The invention further uses a signal bus connected from the monitoring to temperature conversion signal via the electronic erasable rewritable read-only memory element and the temperature signal transmission fingers of the module circuit board to output to a computer system, thereby Select a suitable luminous temperature-sensing situation, and then return it to the luminous control element of the situation. Therefore, the dual-row memory module of the present invention can drive the light-emitting diode elements to show various changes in light-emitting colors, flashing frequencies, light-emitting intensity, and the like, and can simultaneously adjust the fan speed. Therefore, the user can correctly determine whether the memory module is in a high-load overheating state, which will be very helpful for the balance between the stability of the computer system and the pursuit of high performance to achieve the goal.

10‧‧‧電腦處理器裝置 10‧‧‧Computer processor device

100‧‧‧感溫情境模式雙列記憶體模組 100‧‧‧Temperature Sensing Mode Dual Memory Module

110‧‧‧模組電路板 110‧‧‧Modular circuit board

111‧‧‧第一揮發性記憶體元件 111‧‧‧The first volatile memory element

112‧‧‧第二揮發性記憶體元件 112‧‧‧Second Volatile Memory Element

113‧‧‧電子抹除式可複寫唯讀記憶體元件 113‧‧‧ Electronic erasable rewritable read-only memory device

114‧‧‧插接側 114‧‧‧ Plug side

115‧‧‧發光側 115‧‧‧light-emitting side

116‧‧‧接觸指 116‧‧‧contact finger

116A‧‧‧溫度訊號傳輸指 116A‧‧‧Temperature signal transmission means

116B‧‧‧電源傳輸指 116B‧‧‧ Power Transmission Guide

117‧‧‧凸部 117‧‧‧ convex

118‧‧‧訊號匯流排 118‧‧‧Signal Bus

120‧‧‧導光條 120‧‧‧light guide

121‧‧‧不規則側緣輪廓 121‧‧‧ irregular side edge contour

130‧‧‧扣接式散熱片 130‧‧‧ Snap-on heat sink

131、132‧‧‧扣接部 131、132‧‧‧‧Deduction department

133‧‧‧導熱層 133‧‧‧Conductive layer

134‧‧‧反射層 134‧‧‧Reflective layer

140‧‧‧頂蓋 140‧‧‧Top cover

141‧‧‧鏤空開槽 141‧‧‧ Hollow Slot

150‧‧‧發光二極體元件 150‧‧‧light-emitting diode element

160‧‧‧情境發光控制元件 160‧‧‧Situation lighting control element

161‧‧‧第二訊號端點 161‧‧‧The second signal endpoint

162‧‧‧電源端點 162‧‧‧Power endpoint

170‧‧‧共享搭載訊號線 170‧‧‧shared signal line

180‧‧‧共享搭載電源線 180‧‧‧ Shared power cord

190‧‧‧電源供應系統 190‧‧‧Power Supply System

191‧‧‧變壓器元件 191‧‧‧Transformer components

192‧‧‧電源匯流排 192‧‧‧Power Bus

第1圖:依據本發明之一具體實施例,一種感溫情境模式雙列記憶體模組之元件立體分解示意圖。 FIG. 1 is a three-dimensional exploded view of components of a dual-rank memory module in a temperature-sensing mode according to a specific embodiment of the present invention.

第2圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組之模組電路板之正面示意圖。 FIG. 2 is a schematic front view of a module circuit board of the temperature-sensing context mode dual-row memory module according to a specific embodiment of the present invention.

第3圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組之模組電路板之匯流排連接示意圖。 FIG. 3 is a schematic diagram of a bus connection of a module circuit board of the temperature-sensing mode dual-row memory module according to a specific embodiment of the present invention.

第4圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組之模組電路板內發光二極體元件之電源供應系統之連接示意圖。 Fig. 4: According to a specific embodiment of the present invention, the connection diagram of the power supply system of the light-emitting diode elements in the module circuit board of the temperature-sensing mode dual-row memory module.

第5圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組之模組電路板中電子抹除式可複寫唯讀記憶體元件 之訊號連接系統之連接示意圖。 Fig. 5: According to a specific embodiment of the present invention, an electronically erasable rewritable read-only memory element in a module circuit board of the temperature-sensing context mode dual-row memory module The connection diagram of the signal connection system.

第6圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組之模組電路板中情境發光控制元件之電路連接示意圖。 FIG. 6 is a schematic diagram of a circuit connection of a context light-emitting control element in a module circuit board of the temperature-sensing context mode dual-row memory module according to a specific embodiment of the present invention.

第7圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組之模組電路板中接觸指之腳位定義圖。 FIG. 7 is a definition diagram of the pin positions of the contact fingers in the module circuit board of the temperature-sensing mode dual-row memory module according to a specific embodiment of the present invention.

第8圖:依據本發明之一具體實施例,該感溫情境模式雙列記憶體模組與一電腦裝置之溝通示意圖。 FIG. 8 is a schematic diagram of the communication between the dual memory module and a computer device according to a specific embodiment of the present invention.

以下將配合所附圖示詳細說明本發明之實施例,然應注意的是,該些圖示均為簡化之示意圖,僅以示意方法來說明本發明之基本架構或實施方法,故僅顯示與本案有關之元件與組合關係,圖中所顯示之元件並非以實際實施之數目、形狀、尺寸做等比例繪製,某些尺寸比例與其他相關尺寸比例或已誇張或是簡化處理,以提供更清楚的描述。實際實施之數目、形狀及尺寸比例為一種選置性之設計,詳細之元件佈局可能更為複雜。 In the following, the embodiments of the present invention will be described in detail with the accompanying diagrams. However, it should be noted that these diagrams are simplified schematic diagrams, and the basic structure or implementation method of the invention is only illustrated by a schematic method. The relationship between the components and combinations in this case. The components shown in the figure are not drawn in proportion to the actual number, shape, and size. Some size ratios and other related size ratios have been exaggerated or simplified to provide more clarity. description of. The actual number, shape, and size ratio are optional designs, and the detailed component layout may be more complicated.

依據本發明之一具體實施例,一種感溫情境模式雙列記憶體模組100舉例說明於第1圖之元件立體分解示意圖。該感溫情境模式雙列記憶體模組100係包含一模組電路板110、一導光條120以及複數個扣接式散熱片130。其中,第2圖繪示該感溫情境模式雙列記憶體模組100之該模組電路板110之正面。第3圖繪示該感溫情境模式雙列記憶體模組100之該模組電路板110之匯流排 連接關係。 According to a specific embodiment of the present invention, a temperature-sensing context mode dual-rank memory module 100 is exemplified in FIG. 1 and is a three-dimensional exploded view of components. The temperature-sensing context mode dual-row memory module 100 includes a module circuit board 110, a light guide bar 120, and a plurality of buckle-type heat sinks 130. FIG. 2 shows the front side of the module circuit board 110 of the dual-row memory module 100 of the temperature-sensing mode. FIG. 3 shows a bus of the module circuit board 110 of the dual-line memory module 100 in the temperature-sensing mode. Connection relationship.

請參閱第1至3圖,該模組電路板110之一表面係設置有複數個第一揮發性記憶體元件111與複數個第二揮發性記憶體元件112。該些第一揮發性記憶體元件111係集中在一區域並以一固定間距排列,該些第二揮發性記憶體元件112係集中在另一區域並以一相同固定間距排列,在該些第一揮發性記憶體元件111與該些第二揮發性記憶體元件112之間的間隙將大於上述固定間距,以在該模組電路板110之表面中央形成一空白區。該些第一揮發性記憶體元件111與該些第二揮發性記憶體元件112係具體可為動態隨機存取記憶體元件,例如DDR2 DRAM、DDR3 DRAM、DDR4 DRAM。並且,該模組電路板110在該些第一揮發性記憶體元件111與該些第二揮發性記憶體元件112之間係更設置有一電子抹除式可複寫唯讀記憶體元件113,其係可以通過電子方式多次複寫資料並在不通電之狀態下如同硬碟這般保存資料。在本實施例中,該電子抹除式可複寫唯讀記憶體元件113係可內建有溫度感測器。配合以下所述的技術手段,溫度感測器感測溫度經轉換為訊號之後亦可被一情境發光控制元件160應用,故該情境發光控制元件160不需要內建溫度感測器。 Referring to FIGS. 1 to 3, a surface of the module circuit board 110 is provided with a plurality of first volatile memory elements 111 and a plurality of second volatile memory elements 112. The first volatile memory elements 111 are concentrated in one area and arranged at a fixed pitch, and the second volatile memory elements 112 are concentrated in another area and arranged at the same fixed pitch. A gap between a volatile memory element 111 and the second volatile memory elements 112 will be larger than the above-mentioned fixed distance to form a blank area in the center of the surface of the module circuit board 110. The first volatile memory elements 111 and the second volatile memory elements 112 are specifically dynamic random access memory elements, such as DDR2 DRAM, DDR3 DRAM, and DDR4 DRAM. In addition, the module circuit board 110 is further provided with an electronic erasable rewritable read-only memory element 113 between the first volatile memory elements 111 and the second volatile memory elements 112. Data can be rewritten electronically multiple times and stored like a hard disk without power. In this embodiment, the electronic erasable rewritable read-only memory element 113 may have a temperature sensor built-in. With the technical means described below, the temperature sensor can be applied to a situational light emitting control element 160 after converting the temperature to a signal. Therefore, the situational light emitting control element 160 does not need a built-in temperature sensor.

該模組電路板110係具有一插接側114與一發光側115,該插接側114係排列有複數個接觸指116。該發光側115係設置有複數個發光二極體元件150與一情境發光控制元件160。該情境發光控制元件160係用以控制該些發光二極體元件150的開 關、光顏色與閃光頻率。該情境發光控制元件160之一具體型態係可為20腳位的無接腳式四方扁平封裝結構(QFN 20)。請再參閱第1至3圖,較佳地,該模組電路板110之該發光側115係可形成有複數個凸部117而為不規則狀,該些發光二極體元件150係可以斜向照射方式設置於該些凸部117,其中上述斜向照射方式係為非同向的交錯排列。並且,該導光條120係可具有一對應該發光側115之不規則側緣輪廓121。藉此,達到該導光條120的更均勻發光之功效。 The module circuit board 110 has a plug-in side 114 and a light-emitting side 115, and the plug-in side 114 is arranged with a plurality of contact fingers 116. The light-emitting side 115 is provided with a plurality of light-emitting diode elements 150 and a situational light-emitting control element 160. The situational light emitting control element 160 is used to control the light emitting diode elements 150 to be turned on. Off, light color and flash frequency. A specific type of the situational light-emitting control element 160 may be a 20-pin no-pin square flat package structure (QFN 20). Please refer to FIGS. 1 to 3 again. Preferably, the light emitting side 115 of the module circuit board 110 may be formed with a plurality of convex portions 117 to be irregular, and the light emitting diode elements 150 may be inclined. A direct irradiation method is provided on the convex portions 117, and the above-mentioned oblique irradiation method is a staggered arrangement that is not in the same direction. In addition, the light guide bar 120 may have a pair of irregular side edge contours 121 corresponding to the light emitting side 115. Thereby, the effect of more uniform light emission of the light guide bar 120 is achieved.

請再參閱第1圖,該導光條120係以非直接設置關係放置於該模組電路板110之該發光側115上。該導光條120之材質係可為半透明塑膠材料,當該些發光二極體元件150發射出之光源導入至該導光條120時,該導光條120可均勻發光。並且,該些扣接式散熱片130係蓋合於該模組電路板110之該表面與另一相對表面,利用該些扣接式散熱片130之相互扣接,以致使該導光條120以夾合方式固定。在本實施例中,每一扣接式散熱片130之兩側係各具有一扣接部131與另一扣接部132。該些扣接式散熱片130之扣接部131、132相互扣合而組合,同時夾扣住該導光條120。在一具體結構中,該感溫情境模式雙列記憶體模組100係可另包含一頂蓋140,以非直接設置關係可放置於該導光條120上,利用該些扣接式散熱片130之相互扣接,以致使該頂蓋140亦以夾合方式固定。藉此,增添整體金屬外觀的一致性並確保該導光條120之固定。具體地,該頂蓋140係具有複數個鏤空開槽141,以 供該導光條120內的光線透出。 Please refer to FIG. 1 again, the light guide bar 120 is placed on the light emitting side 115 of the module circuit board 110 in an indirect setting relationship. The material of the light guide bar 120 may be a translucent plastic material. When the light sources emitted by the light emitting diode elements 150 are introduced into the light guide bar 120, the light guide bar 120 can emit light uniformly. In addition, the buckle-type heat sinks 130 are covered on the surface and the other opposite surface of the module circuit board 110, and the buckle-type heat sinks 130 are fastened to each other so that the light guide bar 120 Fastened by clamping. In this embodiment, each side of each of the fastening type heat sinks 130 has a fastening portion 131 and another fastening portion 132. The fastening portions 131 and 132 of the fastening heat sinks 130 are fastened and combined with each other, and at the same time, the light guide bar 120 is clamped. In a specific structure, the temperature-sensing context-mode dual-rank memory module 100 series may further include a top cover 140, which may be placed on the light guide bar 120 in an indirect setting relationship, using the buckle-type heat sinks. 130 is fastened to each other, so that the top cover 140 is also fixed in a clamping manner. Thereby, the consistency of the overall metal appearance is increased and the fixing of the light guide bar 120 is ensured. Specifically, the top cover 140 has a plurality of hollow slots 141, so that The light in the light guide bar 120 is allowed to pass out.

請再參閱第1圖,在一較佳具體結構中,每一之該些扣接式散熱片130之內側面係可形成有一導熱層133與一反射層134,其中該導熱層133係可熱傳導貼觸於該些第一揮發性記憶體元件111與該些第二揮發性記憶體元件112,該反射層134係可遮蓋該些發光二極體元件150。因此,該導光條120可不必要覆蓋該些發光二極體元件150,且該些發光二極體元件150發出之光線仍可高效率地導射至該導光條120。 Please refer to FIG. 1 again. In a preferred specific structure, a thermally conductive layer 133 and a reflective layer 134 may be formed on the inner side of each of the snap-fit heat sinks 130, wherein the thermally conductive layer 133 may be thermally conductive. The reflective layer 134 is in contact with the first volatile memory elements 111 and the second volatile memory elements 112 and covers the light emitting diode elements 150. Therefore, the light guide bar 120 may not necessarily cover the light-emitting diode elements 150, and the light emitted by the light-emitting diode elements 150 may still be efficiently guided to the light guide bar 120.

此外,該情境發光控制元件160之電源係共享搭載於該些發光二極體元件150之電源供應系統190,該情境發光控制元件160之訊號係共享搭載於該電子抹除式可複寫唯讀記憶體元件113之訊號連接系統。第4圖繪示該感溫情境模式雙列記憶體模組100之該模組電路板110內該些發光二極體元件150之電源供應系統190之連接關係。第5圖繪示該感溫情境模式雙列記憶體模組100之該模組電路板110中該電子抹除式可複寫唯讀記憶體元件113之訊號連接系統之連接關係。第6圖繪示該感溫情境模式雙列記憶體模組100之該模組電路板110中該情境發光控制元件160之電路連接關係。第7圖繪示該感溫情境模式雙列記憶體模組100之該模組電路板110中接觸指116之腳位定義關係。第8圖繪示該感溫情境模式雙列記憶體模組100與一電腦裝置之溝通示意關係。 In addition, the power of the situational light emitting control element 160 is shared by the power supply system 190 mounted on the light emitting diode elements 150, and the signal of the situational light emitting control element 160 is shared by the electronic erasable rewritable read-only memory The signal connection system of the body element 113. FIG. 4 illustrates the connection relationship of the power supply system 190 of the light-emitting diode elements 150 in the module circuit board 110 of the temperature-sensing context mode dual-row memory module 100. FIG. 5 shows the connection relationship of the signal connection system of the electronic erasable rewritable read-only memory element 113 in the module circuit board 110 of the temperature-sensing context mode dual-row memory module 100. FIG. 6 shows the circuit connection relationship of the context light-emitting control element 160 in the module circuit board 110 of the temperature-sensing context mode dual-row memory module 100. FIG. 7 shows the pin-to-pin relationship of the contact fingers 116 in the module circuit board 110 of the temperature-sensing context mode dual-row memory module 100. FIG. 8 shows a schematic communication relationship between the dual-rank memory module 100 and a computer device in the temperature-sensing mode.

該電子抹除式可複寫唯讀記憶體元件113之訊號連接系統係可包含複數個訊號匯流排118,其係可連接該電子抹除 式可複寫唯讀記憶體元件113之複數個第一訊號端點(如第6圖中以該些訊號匯流排118連接並標示為SCL、SDA、SA0、SA1、SA2之端點)與該些接觸指116中之複數個溫度訊號傳輸指116A。該些訊號匯流排118係具體可為記憶體模組之系統管理匯流排(System Management Bus,SMBUS)。並且,如第3圖所示,該模組電路板110係可具有複數個共享搭載訊號線170與複數個共享搭載電源線180,該些共享搭載訊號線170係可連接該情境發光控制元件160之複數個第二訊號端點161(如第6圖所示)至該些訊號匯流排118,該些共享搭載電源線180係可連接該情境發光控制元件160之複數個電源端點162至該電源供應系統190。 The signal erasing system of the electronic erasable rewritable read-only memory element 113 may include a plurality of signal buses 118, which can be connected to the electronic erasing Multiple first signal endpoints of the rewritable read-only memory element 113 (e.g., these signal buses 118 are connected and labeled as the endpoints of SCL, SDA, SA0, SA1, SA2 in Figure 6) and these The plurality of temperature signal transmitting fingers 116A in the contact finger 116. The signal buses 118 are specifically a system management bus (SMBUS) of a memory module. In addition, as shown in FIG. 3, the module circuit board 110 may have a plurality of shared-equipped signal lines 170 and a plurality of shared-equipped power lines 180, and the shared-equipped signal lines 170 may be connected to the scenario light-emitting control element 160. The plurality of second signal terminals 161 (as shown in FIG. 6) to the signal buses 118, and the shared power supply lines 180 are connected to the plurality of power terminals 162 of the scenario lighting control element 160 to the Power supply system 190.

請參閱第3至8圖,該電源供應系統190係可包含一使第一工作電壓轉換為一第二工作電壓之變壓器元件191以及一電源匯流排192,該電源匯流排192係可以該第一工作電壓傳輸方式由該些接觸指116中之複數個電源傳輸指116B至連接該變壓器元件191,並且該些共享搭載電源線180係可以該第二工作電壓傳輸方式由該變壓器元件191連接,其中該第二工作電壓係可大於該第一工作電壓。在本具體實施例中,該第一工作電壓係為2.5V,該第二工作電壓係為4V。 Please refer to FIGS. 3 to 8. The power supply system 190 may include a transformer element 191 that converts a first working voltage into a second working voltage and a power bus 192. The power bus 192 may be the first The working voltage transmission method is connected to the transformer element 191 by a plurality of power transmission fingers 116B in the contact fingers 116, and the shared power supply lines 180 can be connected by the transformer element 191 in the second working voltage transmission method. The second operating voltage may be greater than the first operating voltage. In this specific embodiment, the first working voltage is 2.5V, and the second working voltage is 4V.

請參閱第4圖,該情境發光控制元件160之電源係共享搭載於該些發光二極體元件150之電源供應系統190。請參閱第5圖,該情境發光控制元件160之訊號連接係共享搭載於該電子抹除式可複寫唯讀記憶體元件113之訊號連接系統。 Please refer to FIG. 4, the power supply of the scenario light-emitting control element 160 is shared with the power supply system 190 mounted on the light-emitting diode elements 150. Please refer to FIG. 5, the signal connection of the scenario light control element 160 is a signal connection system mounted on the electronic erasable rewritable read-only memory element 113.

請參閱第6圖,該情境發光控制元件160不具有內建溫度感冊器與對應之電路連接。請參閱第7圖,該模組電路板110中接觸指116之腳位定義係包含對應於該電子抹除式可複寫唯讀記憶體元件113之該些溫度訊號傳輸指116A以及對應於該些發光二極體元件150之該些電源傳輸指116B。第7圖中之該些溫度訊號傳輸指116A之連接端點位置係具體標示為SCL、SDA、SA0、SA1、SA2,亦連接至第6圖中該情境發光控制元件160之訊號端點。第7圖中之該些電源傳輸指116B之連接端點位置係具體標示為VPP,其係連接至該些發光二極體元件150之該電源供應系統190。 Please refer to FIG. 6, the situational light-emitting control element 160 does not have a built-in temperature sensor connected to a corresponding circuit. Please refer to FIG. 7. The pin definitions of the contact fingers 116 in the module circuit board 110 include the temperature signal transmission fingers 116A corresponding to the electronic erasable rewritable read-only memory element 113 and corresponding to these The power transmitting fingers 116B of the light emitting diode element 150. The temperature signal transmission fingers in FIG. 7 are connected to the endpoints of 116A, which are specifically labeled as SCL, SDA, SA0, SA1, and SA2, and are also connected to the signal endpoints of the scenario lighting control element 160 in FIG. The positions of the connection end points of the power transmission fingers 116B in FIG. 7 are specifically designated as VPP, which are the power supply system 190 connected to the light emitting diode elements 150.

請參閱第8圖,該感溫情境模式雙列記憶體模組100係可插接至一電腦裝置,並連接至該電腦裝置之電腦處理器裝置10,例如中央處理器(CPU)或是平台路徑控制器(PCH,Platform Controller Hub)。該記憶體模組的工作溫度100能準確的感測到,經由該電子抹除式可複寫唯讀記憶體元件113之訊號連接系統,溫度訊號可傳送至該電腦處理器裝置10,經由軟體程式選擇匹配的已定義感溫情境,在正確的地址溝通下,該電腦處理器裝置10係能將對應的控制訊號再經由該電子抹除式可複寫唯讀記憶體元件113之訊號連接系統(包含該些訊號匯流排118)與該些共享搭載訊號線170回傳至該情境發光控制元件160,以使該記憶體模組100之該些發光二極體元件150表現出正確的已定義感溫情境。 Please refer to FIG. 8, the temperature-sensing scenario mode dual-rank memory module 100 can be plugged into a computer device and connected to the computer processor device 10 of the computer device, such as a central processing unit (CPU) or a platform. Path controller (PCH, Platform Controller Hub). The operating temperature 100 of the memory module can be accurately sensed. Through the signal connection system of the electronically erasable rewritable read-only memory element 113, the temperature signal can be transmitted to the computer processor device 10 through a software program. Select the matching defined temperature-sensing context. Under the correct address communication, the computer processor device 10 can pass the corresponding control signal through the electronic erasable rewritable read-only memory element 113 signal connection system (including The signal buses 118) and the shared piggyback signal lines 170 are transmitted back to the situational light-emitting control element 160, so that the light-emitting diode elements 150 of the memory module 100 exhibit the correct defined temperature sensitivity. Situation.

以上所揭露的僅為本發明較佳實施例而已,當然不 能以此來限定本發明之權利範圍,因此依本發明權利要求所作的等同變化,仍屬本發明所涵蓋的範圍。 What has been disclosed above are only preferred embodiments of the present invention, and of course not This can be used to limit the scope of the invention, so equivalent changes made according to the claims of the invention still fall within the scope of the invention.

100‧‧‧感溫情境模式雙列記憶體模組 100‧‧‧Temperature Sensing Mode Dual Memory Module

110‧‧‧模組電路板 110‧‧‧Modular circuit board

111‧‧‧第一揮發性記憶體元件 111‧‧‧The first volatile memory element

112‧‧‧第二揮發性記憶體元件 112‧‧‧Second Volatile Memory Element

113‧‧‧電子抹除式可複寫唯讀記憶體元件 113‧‧‧ Electronic erasable rewritable read-only memory device

114‧‧‧插接側 114‧‧‧ Plug side

115‧‧‧發光側 115‧‧‧light-emitting side

116‧‧‧接觸指 116‧‧‧contact finger

120‧‧‧導光條 120‧‧‧light guide

121‧‧‧不規則側緣輪廓 121‧‧‧ irregular side edge contour

130‧‧‧扣接式散熱片 130‧‧‧ Snap-on heat sink

131、132‧‧‧扣接部 131、132‧‧‧‧Deduction department

133‧‧‧導熱層 133‧‧‧Conductive layer

134‧‧‧反射層 134‧‧‧Reflective layer

140‧‧‧頂蓋 140‧‧‧Top cover

141‧‧‧鏤空開槽 141‧‧‧ Hollow Slot

150‧‧‧發光二極體元件 150‧‧‧light-emitting diode element

160‧‧‧情境發光控制元件 160‧‧‧Situation lighting control element

Claims (11)

一種感溫情境模式雙列記憶體模組,包含:一模組電路板,該模組電路板之一表面係設置有複數個第一揮發性記憶體元件與複數個第二揮發性記憶體元件,該模組電路板在該些第一揮發性記憶體元件與該些第二揮發性記憶體元件之間係更設置有一電子抹除式可複寫唯讀記憶體元件,該模組電路板係具有一插接側與一發光側,該插接側係排列有複數個接觸指,該發光側係設置有複數個發光二極體元件與一情境發光控制元件;一導光條,係以非直接設置關係放置於該模組電路板之該發光側上;以及複數個扣接式散熱片,係蓋合於該模組電路板之該表面與另一相對表面,利用該些扣接式散熱片之相互扣接,以致使該導光條以夾合方式固定;其中,每一之該些扣接式散熱片之內側面係形成有一導熱層與一反射層,其中該導熱層係熱傳導貼觸於該些第一揮發性記憶體元件與該些第二揮發性記憶體元件,該反射層係遮蓋該些發光二極體元件。 A dual-row memory module with temperature-sensing mode includes: a module circuit board, and one surface of the module circuit board is provided with a plurality of first volatile memory elements and a plurality of second volatile memory elements The module circuit board is further provided with an electronic erasable rewritable read-only memory element between the first volatile memory elements and the second volatile memory elements. The module circuit board is It has a plug-in side and a light-emitting side. The plug-in side is arranged with a plurality of contact fingers. The light-emitting side is provided with a plurality of light-emitting diode elements and a situational light-emitting control element. Placed directly on the light-emitting side of the module circuit board; and a plurality of button-type heat sinks, which cover the surface and the other opposite surface of the module circuit board, and use the button-type heat dissipation The sheets are fastened to each other, so that the light guide bar is fixed in a clamping manner; wherein the inner side of each of the buckle-type heat sinks is formed with a thermally conductive layer and a reflective layer, wherein the thermally conductive layer is a heat conductive sticker Touch the first volatilization The plurality of memory elements of the second nonvolatile memory element, the reflective layer system covering the plurality of light-emitting diode element. 如申請專利範圍第1項所述之感溫情境模式雙列記憶體模組,其中該情境發光控制元件之電源係共享搭載於該些發光二極體元件之電源供應系統,該情境發光控制元件之訊號係共享搭載於該電子抹除式可複寫唯讀記憶體元件之訊號連 接系統。 According to the temperature-sensing scenario mode dual-rank memory module described in item 1 of the scope of the patent application, wherein the power supply of the situational light-emitting control element is a power supply system sharing the light-emitting diode elements, and the situational light-emitting control element The signal is shared with the signal connector mounted on the electronic erasable rewritable read-only memory element. Connect the system. 如申請專利範圍第1項所述之感溫情境模式雙列記憶體模組,另包含一頂蓋,以非直接設置關係放置於該導光條上,利用該些扣接式散熱片之相互扣接,以致使該頂蓋亦以夾合方式固定。 The temperature-sensing mode dual-row memory module described in item 1 of the scope of patent application, further includes a top cover, which is placed on the light guide bar in an indirect setting relationship, and uses the mutual connection of the buckle-type heat sinks. Buckle, so that the top cover is also fixed in a clamping manner. 如申請專利範圍第1項所述之感溫情境模式雙列記憶體模組,其中該模組電路板之該發光側係形成有複數個凸部而為不規則狀,該些發光二極體元件係以斜向照射方式設置於該些凸部,並且該導光條係具有一對應該發光側之不規則側緣輪廓。 According to the temperature-sensing mode dual-row memory module described in item 1 of the scope of the patent application, wherein the light emitting side of the module circuit board is formed with a plurality of convex portions and is irregular, and the light emitting diodes The element is arranged on the convex portions in an oblique irradiation manner, and the light guide strip has a pair of irregular side edge contours corresponding to the light emitting side. 如申請專利範圍第1至4項任一項所述之感溫情境模式雙列記憶體模組,其中該電子抹除式可複寫唯讀記憶體元件係內建有溫度感測器。 The temperature-sensing mode dual-row memory module according to any one of claims 1 to 4, wherein the electronic erasable rewritable read-only memory element has a built-in temperature sensor. 如申請專利範圍第2項所述之感溫情境模式雙列記憶體模組,其中該電子抹除式可複寫唯讀記憶體元件之訊號連接系統係包含複數個訊號匯流排,其係連接該電子抹除式可複寫唯讀記憶體元件之複數個第一訊號端點與該些接觸指中之複數個溫度訊號傳輸指,並且該模組電路板係具有複數個共享搭載訊號線與複數個共享搭載電源線,該些共享搭載訊號線係連接該情境發光控制元件之複數個第二訊號端點至該些訊號匯流排,該些共享搭載電源線係連接該情境發光控制元件之複數個電源端點至該電源供應系統。 The temperature-sensing mode dual-row memory module described in item 2 of the patent application scope, wherein the signal connection system of the electronically erasable rewritable read-only memory element includes a plurality of signal buses, which are connected to the The electronic erasing type rewritable read-only memory element has a plurality of first signal terminals and a plurality of temperature signal transmission fingers in the contact fingers, and the module circuit board has a plurality of shared-carrying signal lines and a plurality of The shared power-supply power lines are connected to a plurality of second signal endpoints of the context light-emitting control element to the signal buses, and the shared power-supply power lines are connected to the power supply of the context-light control element. End point to the power supply system. 如申請專利範圍第6項所述之感溫情境模式雙列記憶體模組,其中該電源供應系統係包含一使第一工作電壓轉換為一 第二工作電壓之變壓器元件以及一電源匯流排,該電源匯流排係以該第一工作電壓傳輸方式由該些接觸指中之複數個電源傳輸指至連接該變壓器元件,並且該些共享搭載電源線係以該第二工作電壓傳輸方式由該變壓器元件連接,其中該第二工作電壓係大於該第一工作電壓。 The temperature-sensing mode dual-rank memory module according to item 6 of the patent application scope, wherein the power supply system includes a first operating voltage converted into a The transformer element of the second working voltage and a power bus, the power bus is connected to the transformer element by the plurality of power transmitting fingers in the contact fingers in the first operating voltage transmission mode, and the shared power supply The line is connected by the transformer element in the second working voltage transmission mode, wherein the second working voltage is greater than the first working voltage. 一種感溫情境模式雙列記憶體模組之模組電路板,該模組電路板之一表面係設置有複數個第一揮發性記憶體元件與複數個第二揮發性記憶體元件,該模組電路板在該些第一揮發性記憶體元件與該些第二揮發性記憶體元件之間係更設置有一電子抹除式可複寫唯讀記憶體元件,該模組電路板係具有一插接側與一發光側,該插接側係排列有複數個接觸指,該發光側係設置有複數個發光二極體元件與一情境發光控制元件;其中,該情境發光控制元件之訊號係共享搭載於該電子抹除式可複寫唯讀記憶體元件之訊號連接系統,該情境發光控制元件之電源係共享搭載於該些發光二極體元件之電源供應系統;其中,該電子抹除式可複寫唯讀記憶體元件之訊號連接系統係包含複數個訊號匯流排,其係連接該電子抹除式可複寫唯讀記憶體元件之複數個第一訊號端點與該些接觸指中之複數個溫度訊號傳輸指,並且該模組電路板係具有複數個共享搭載訊號線與複數個共享搭載電源線,該些共享搭載訊號線係連接該情境發光控制元件之複數個第二訊號端點至該些訊號匯流排,該些共享搭載電源線係連接該情境發光控制元件之複數個電源端點至該電源供應系統。 A module circuit board of a temperature-sensing mode dual-row memory module. One surface of the module circuit board is provided with a plurality of first volatile memory elements and a plurality of second volatile memory elements. The group circuit board is further provided with an electronic erasable rewritable read-only memory element between the first volatile memory elements and the second volatile memory elements. The module circuit board has a plug-in unit. A connection side and a light-emitting side, the plug-in side is arranged with a plurality of contact fingers, the light-emitting side is provided with a plurality of light-emitting diode elements and a situation light-emitting control element; wherein the signal of the situation light-control element is shared The signal connection system mounted on the electronic erasable rewritable read-only memory element, and the power supply of the situational light emitting control element shares the power supply system mounted on the light emitting diode elements; wherein the electronic erasable type can be The signal connection system of the rewritable read-only memory element includes a plurality of signal buses, which are connected to the plurality of first signal endpoints of the electronically erasable rewritable read-only memory element and the The plurality of temperature signal transmission fingers in the contact fingers, and the module circuit board has a plurality of shared carrying signal lines and a plurality of shared carrying power lines, and the shared carrying signal lines are connected to a plurality of The two signal terminals are connected to the signal buses, and the shared power supply lines are connected to the power supply system by a plurality of power terminals of the scenario lighting control element. 如申請專利範圍第8項所述之感溫情境模式雙列記憶體模組之模組電路板,其中該模組電路板之該發光側係形成有複數個凸部而為不規則狀,該些發光二極體元件係以斜向照射方式設置於該些凸部。 According to the temperature-sensing mode dual-row memory module module circuit board described in the patent application item No. 8, wherein the light emitting side of the module circuit board is formed with a plurality of convex portions and is irregular, the The light-emitting diode elements are disposed on the convex portions in an oblique irradiation manner. 如申請專利範圍第8項所述之感溫情境模式雙列記憶體模組之模組電路板,其中該電子抹除式可複寫唯讀記憶體元件係內建有溫度感測器。 According to the module circuit board of the temperature-sensing scenario mode dual-row memory module described in item 8 of the scope of the patent application, the electronic erasable rewritable read-only memory element has a built-in temperature sensor. 如申請專利範圍第8、9、10項任一項所述之感溫情境模式雙列記憶體模組之模組電路板,其中該電源供應系統係包含一使第一工作電壓轉換為一第二工作電壓之變壓器元件以及一電源匯流排,該電源匯流排係以該第一工作電壓傳輸方式由該些接觸指中之複數個電源傳輸指至連接該變壓器元件,並且該些共享搭載電源線係以該第二工作電壓傳輸方式由該變壓器元件連接,其中該第二工作電壓係大於該第一工作電壓。 The module circuit board of the temperature-sensing scenario mode dual-row memory module according to any one of claims 8, 9, and 10, wherein the power supply system includes a first operating voltage converted into a first Two working voltage transformer elements and a power bus, the power bus is connected to the transformer element by the plurality of power transmission fingers in the contact fingers in the first working voltage transmission mode, and the shared power supply lines are connected It is connected by the transformer element in the second operating voltage transmission mode, wherein the second operating voltage is greater than the first operating voltage.
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