TWI610814B - Method for manufacturing laminate with hole, laminate with hole, method for manufacturing multilayer substrate, composition for forming underlayer - Google Patents

Method for manufacturing laminate with hole, laminate with hole, method for manufacturing multilayer substrate, composition for forming underlayer Download PDF

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TWI610814B
TWI610814B TW101135995A TW101135995A TWI610814B TW I610814 B TWI610814 B TW I610814B TW 101135995 A TW101135995 A TW 101135995A TW 101135995 A TW101135995 A TW 101135995A TW I610814 B TWI610814 B TW I610814B
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group
layer
metal
polymer
metal oxide
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TW201318867A (en
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塚本直樹
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富士軟片股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/421Blind plated via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

本發明的附孔積層體的製造方法包括如下的孔形成步驟:對在基板上依次具備第1金屬層、底層、及被鍍敷層的加工前積層體實施雷射加工,而形成自加工前積層體的被鍍敷層側的表面到達第1金屬層表面的孔,上述底層包含具有含有氰基的重複單元的聚合物及金屬氧化物粒子;相對於聚合物中的所有重複單元,聚合物中的含有氰基的重複單元的含量為10莫耳%~60莫耳%,金屬氧化物粒子的粒徑為50nm~2000nm,且相對於聚合物及金屬氧化物粒子的合計質量,底層中的金屬氧化物粒子的含量為20質量%~60質量%。 The method for manufacturing a laminated body with holes according to the present invention includes a hole forming step of performing laser processing on a pre-processed laminated body having a first metal layer, a bottom layer, and a plated layer in order on the substrate to form a self-processed layer. The surface of the layered body on the plated layer side reaches the hole of the surface of the first metal layer, and the bottom layer includes a polymer having repeating units containing a cyano group and metal oxide particles; the polymer is relative to all repeating units in the polymer. The content of the cyano-containing repeating unit is 10 mol% to 60 mol%, the particle size of the metal oxide particles is 50nm to 2000nm, and relative to the total mass of the polymer and the metal oxide particles, the The content of the metal oxide particles is 20% by mass to 60% by mass.

Description

附孔積層體的製造方法、附孔積層體、多層基板的製造方法及底層形成用組成物 Production method of laminated body with holes, laminated body with holes, manufacturing method of multilayer substrate, and composition for forming base layer

本發明是有關於一種附孔積層體的製造方法、附孔積層體、多層基板的製造方法及底層形成用組成物。 The present invention relates to a method for manufacturing a laminated body with holes, a laminated body with holes, a method for manufacturing a multilayer substrate, and a composition for forming a bottom layer.

自先前以來,於絕緣性基板的表面形成有利用金屬圖案的配線的金屬配線基板廣泛地用於電子零件或半導體元件。 Conventionally, metal wiring substrates on which a wiring pattern using a metal pattern is formed on the surface of an insulating substrate have been widely used for electronic parts or semiconductor devices.

作為此種金屬配線基板的製作方法,主要使用「減成法(subtractive process)」。該減成法是指如下的方法:於形成在基板表面的金屬層上,設置藉由活性光線的照射而感光的感光層,對該感光層進行成像曝光,其後進行顯影而形成抗蝕劑圖像,繼而,對金屬層進行蝕刻而形成金屬圖案,最後將抗蝕劑圖像剝離。 As a method of manufacturing such a metal wiring board, a "subtractive method" is mainly used. This subtractive method refers to a method in which a photosensitive layer that is photosensitive by irradiation with active light is provided on a metal layer formed on a substrate surface, the photosensitive layer is imagewise exposed, and then developed to form a resist Then, the metal layer is etched to form a metal pattern, and finally the resist image is peeled off.

於藉由該方法而獲得的金屬配線基板中,利用藉由在基板表面設置凹凸而產生的定錨效應,使基板與金屬層之間的密接性顯現。因此,存在因所獲得的金屬圖案的基板界面部的凹凸,而導致用作金屬配線時的高頻特性變差這一問題點。另外,為了對基板表面進行凹凸化處理,必須利用鉻酸等強酸對基板表面進行處理,因此亦存在為了獲得金屬層與基板的密接性優異的金屬圖案而需要繁雜的步驟這一問題點。 In the metal wiring substrate obtained by this method, the anchoring effect generated by providing unevenness on the surface of the substrate is used to make the adhesion between the substrate and the metal layer appear. For this reason, there is a problem that the high-frequency characteristics of the substrate interface portion of the obtained metal pattern are deteriorated when used as metal wiring. In addition, in order to perform unevenness treatment on the surface of the substrate, it is necessary to treat the surface of the substrate with a strong acid such as chromic acid. Therefore, there is a problem that complicated steps are required to obtain a metal pattern having excellent adhesion between the metal layer and the substrate.

作為解決該問題的方法,已知有如下的方法:於基板上形成與基板具有高密接性的被鍍敷層,對該被鍍敷層實 施鍍敷而於被鍍敷層上形成金屬層(專利文獻1)。根據該方法,可不使基板的表面粗面化,而改良基板與金屬層的密接性。再者,於專利文獻1中,在基板與被鍍敷層之間設置中間層(密接輔助層)來提高金屬層的密接性。 As a method for solving this problem, a method is known in which a plated layer having high adhesion to the substrate is formed on a substrate, and the plated layer is solidified. A metal layer is formed on the plated layer by plating (Patent Document 1). According to this method, the adhesion between the substrate and the metal layer can be improved without roughening the surface of the substrate. Furthermore, in Patent Document 1, an intermediate layer (adhesion auxiliary layer) is provided between the substrate and the plated layer to improve the adhesion of the metal layer.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2010-248464號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2010-248464

另一方面,近年來,伴隨電子機器的高功能化等的要求,電子零件的高密度積體化,進而高密度安裝化正不斷發展。於此種狀況下,這些中所使用的對應於高密度安裝的配線板等亦需要小型化且高密度化,為了滿足此種要求,於多層基板中,能夠以更高的連接可靠性將由微細配線間距所形成的多層的金屬層(配線層)間電性連接變得更重要。 On the other hand, in recent years, with the demand for high functionality of electronic equipment, the density of electronic components has been increased, and the density of electronic components has been continuously developed. In such a situation, wiring boards and the like corresponding to high-density mounting used in these also need to be miniaturized and high-density. In order to meet such requirements, in multilayer substrates, finer connection reliability can be achieved with finer connections. The electrical connection between multiple metal layers (wiring layers) formed by the wiring pitch becomes more important.

通常,當製造具有多層的金屬層的多層基板時,形成用以確保金屬層間的導通的通道孔(via hole)。 Generally, when manufacturing a multi-layer substrate having a plurality of metal layers, a via hole is formed to ensure conduction between the metal layers.

本發明者等人針對專利文獻1中所具體揭示的具有基板與中間層(密接輔助層)及被鍍敷層的積層體,利用雷射加工而實施了孔(通道)的形成處理,結果所形成的孔的形狀精度並不充分,且擔憂損害通道的連接可靠性。 The inventors of the present invention have performed a hole (channel) formation process using laser processing for a multilayer body having a substrate, an intermediate layer (adhesive auxiliary layer), and a plated layer specifically disclosed in Patent Document 1. The shape accuracy of the formed hole is insufficient, and there is a concern that the connection reliability of the channel is impaired.

另外,關於該積層體,於提昇孔的形狀精度,並且如上述般確保高連接可靠性後,亦必須保證形成於被鍍敷層上的金屬層的優異的密接性。 In addition, regarding this laminated body, after improving the shape accuracy of the holes and ensuring high connection reliability as described above, it is also necessary to ensure excellent adhesion of the metal layer formed on the plated layer.

鑒於上述實際情況,本發明的目的在於提供一種藉由雷射加工所形成的孔的形狀精度優異,並且所積層的金屬層的密接性優異的附孔積層體的製造方法、及根據該製造方法所獲得的附孔積層體。 In view of the above-mentioned circumstances, an object of the present invention is to provide a method for producing a laminated body with holes, which is excellent in the shape accuracy of holes formed by laser processing and has excellent adhesion of the metal layer to be laminated, and the manufacturing method therefor The obtained laminated body with holes.

另外,本發明的目的亦在於提供一種使用該附孔積層體、且具有密接性優異的金屬層的多層基板的製造方法。 Another object of the present invention is to provide a method for manufacturing a multilayer substrate using the laminated body with holes and having a metal layer having excellent adhesion.

進而,本發明的目的亦在於提供一種用於附孔積層體的製造方法的底層形成用組成物。 Furthermore, an object of the present invention is to provide a composition for forming a primer layer for use in a method for producing a laminated body with holes.

本發明者等人對上述課題進行了努力研究,結果發現藉由使配置在被鍍敷層與基板之間的底層(密接輔助層)中包含具有含有氰基的重複單元的聚合物、及規定的大小的金屬氧化物粒子,利用雷射加工所形成的孔的形狀精度、及積層於被鍍敷層上的金屬層的密接性大幅度變化,根據該發現而完成了本發明。 The present inventors made diligent studies on the above-mentioned problems, and as a result, it has been found that a polymer having a repeating unit containing a cyano group is contained in a bottom layer (adhesive auxiliary layer) disposed between a plated layer and a substrate, and regulations Based on the findings, the metal oxide particles of various sizes vary greatly in shape accuracy of holes formed by laser processing and the adhesion of the metal layer laminated on the plated layer.

即,本發明者等人發現可藉由以下的構成來解決上述課題。 That is, the present inventors have found that the above problems can be solved by the following configuration.

(1)一種附孔積層體的製造方法,其包括如下的孔形成步驟:對在基板上依次具備第1金屬層、底層及被鍍敷層的加工前積層體實施雷射加工,而形成自加工前積層體的被鍍敷層側的表面到達第1金屬層表面的孔,上述底層包含具有含有氰基的重複單元的聚合物及金屬氧化物粒子,上述被鍍敷層具有與鍍敷觸媒或其前驅物相互作用的官能基;相對於聚合物中的所有重複單元,聚合物中的含有氰 基的重複單元的含量為10莫耳%~60莫耳%,金屬氧化物粒子的粒徑為50 nm~2000 nm,且相對於聚合物及金屬氧化物粒子的合計質量,底層中的金屬氧化物粒子的含量為20質量%~60質量%。 (1) A method for manufacturing a laminated body with holes, including a hole forming step of performing laser processing on a pre-processed laminated body having a first metal layer, a bottom layer, and a plated layer in order on the substrate to form The hole on the plated layer side of the multilayer body before processing reaches the first metal layer surface. The bottom layer includes a polymer having repeating units containing a cyano group and metal oxide particles. The plated layer has contact with plating. Functional groups that are interacted with the polymer or its precursor; the polymer contains cyanide relative to all repeating units in the polymer The content of the repeating unit of the base is 10 mol% to 60 mol%, the particle size of the metal oxide particles is 50 nm to 2000 nm, and the metal in the bottom layer is oxidized relative to the total mass of the polymer and the metal oxide particles. The content of the particles is 20% by mass to 60% by mass.

(2)如(1)所述之附孔積層體的製造方法,其中相對於聚合物及金屬氧化物粒子的合計質量,底層中的金屬氧化物粒子的含量為20質量%~50質量%。 (2) The method for producing a porous laminated body according to (1), wherein the content of the metal oxide particles in the bottom layer is 20% to 50% by mass relative to the total mass of the polymer and the metal oxide particles.

(3)一種多層基板的製造方法,其包括:觸媒賦予步驟,對藉由如(1)或(2)所述之製造方法所獲得的附孔積層體中的被鍍敷層賦予鍍敷觸媒或其前驅物;以及鍍敷步驟,對賦予有鍍敷觸媒或其前驅物的被鍍敷層進行鍍敷處理,將經由孔而與第1金屬層接觸並導通的第2金屬層形成於被鍍敷層上。 (3) A method for manufacturing a multi-layer substrate, comprising: a catalyst applying step of applying plating to a plated layer in the laminated body with holes obtained by the manufacturing method described in (1) or (2) A catalyst or a precursor thereof; and a plating step of performing a plating treatment on a plated layer to which the plating catalyst or a precursor thereof is provided, and a second metal layer that is in contact with and is in contact with the first metal layer through a hole It is formed on a plated layer.

(4)如(3)所述之多層基板的製造方法,其更包括於鍍敷步驟後,將第2金屬層蝕刻成圖案狀,而形成圖案狀金屬層的圖案形成步驟。 (4) The method for manufacturing a multilayer substrate according to (3), further comprising a pattern forming step of etching the second metal layer into a pattern after the plating step to form a patterned metal layer.

(5)一種印刷配線基板,其包括藉由如(3)或(4)所述之製造方法所製造的多層基板。 (5) A printed wiring board including a multilayer substrate manufactured by the manufacturing method according to (3) or (4).

(6)一種附孔積層體,其在基板上依次包括第1金屬層、底層及被鍍敷層,上述底層包含具有含有氰基的重複單元的聚合物及金屬氧化物粒子,上述被鍍敷層具有與鍍敷觸媒或其前驅物相互作用的官能基,相對於聚合物中的所有重複單元,聚合物中的含有氰 基的重複單元的含量為10莫耳%~60莫耳%,金屬氧化物粒子的粒徑為50 nm~2000 nm,相對於聚合物及金屬氧化物粒子的合計質量,底層中的金屬氧化物粒子的含量為20質量%~60質量%,且具有自被鍍敷層側的表面到達第1金屬層表面的孔。 (6) A laminated body with holes comprising a first metal layer, a bottom layer, and a plated layer in this order on a substrate, the bottom layer comprising a polymer having repeating units containing a cyano group and metal oxide particles, and the plated layer The layer has functional groups that interact with the plating catalyst or its precursor, and the polymer contains cyanide relative to all repeating units in the polymer. The content of the repeating unit of the base is 10 mol% to 60 mol%, and the particle size of the metal oxide particles is 50 nm to 2000 nm. The metal oxide in the bottom layer is relative to the total mass of the polymer and the metal oxide particles. The content of the particles is from 20% by mass to 60% by mass, and there are holes from the surface on the side of the plating layer to the surface of the first metal layer.

(7)一種底層形成用組成物,其包括具有含有氰基的重複單元的聚合物及金屬氧化物粒子,相對於聚合物中的所有重複單元,聚合物中的含有氰基的重複單元的含量為10莫耳%~60莫耳%,金屬氧化物粒子的粒徑為50 nm~2000 nm,且相對於聚合物及金屬氧化物粒子的合計質量,由底層形成用組成物所形成的底層中的金屬氧化物粒子的含量為20質量%~60質量%。 (7) A composition for forming a bottom layer, comprising a polymer having repeating units containing a cyano group and metal oxide particles, and the content of the repeating units containing a cyano group in the polymer relative to all repeating units in the polymer It is 10 mol% to 60 mol%, the particle size of the metal oxide particles is 50 nm to 2000 nm, and it is in the bottom layer formed of the composition for forming the bottom layer relative to the total mass of the polymer and the metal oxide particles. The content of the metal oxide particles is 20% by mass to 60% by mass.

根據本發明,可提供一種藉由雷射加工所形成的孔的形狀精度優異,並且所積層的金屬層的密接性優異的附孔積層體的製造方法、及根據該製造方法所獲得的附孔積層體。 According to the present invention, it is possible to provide a method for producing a laminated body with holes having excellent shape accuracy of holes formed by laser processing and excellent adhesion of the metal layers to be laminated, and the attached holes obtained by the manufacturing method. Laminated body.

另外,根據本發明,亦可提供一種使用該附孔積層體、且具有密接性優異的金屬層的多層基板的製造方法。 In addition, according to the present invention, there is also provided a method for manufacturing a multilayer substrate using the laminated body with holes and having a metal layer having excellent adhesion.

進而,根據本發明,亦可提供一種用於附孔積層體的製造方法的底層形成用組成物。 Furthermore, according to the present invention, a composition for forming a primer layer for use in a method for producing a laminated body with holes can also be provided.

以下,對本實施形態進行說明。 Hereinafter, this embodiment will be described.

作為本實施形態的特徵點,可列舉如下的特徵點:具有規定的層構成的加工前積層體中的底層包含具有含有氰基的重複單元的聚合物、及規定的大小的金屬氧化物粒子。首先,藉由使用具有規定的官能基的聚合物,基板與被鍍敷層的密接性進一步提昇,作為結果,金屬層的密接性進一步提昇。另外,藉由使用規定的大小的金屬氧化物粒子,於雷射加工時在底層中產生光散射,所形成的孔的形狀精度提昇。 As a characteristic point of this embodiment, the characteristic point which the pre-processed laminated body which has a predetermined layer structure contains the polymer which has a repeating unit containing a cyano group, and the metal oxide particle of predetermined size is mentioned. First, by using a polymer having a predetermined functional group, the adhesion between the substrate and the plated layer is further improved, and as a result, the adhesion of the metal layer is further improved. In addition, by using metal oxide particles of a predetermined size, light scattering occurs in the bottom layer during laser processing, and the shape accuracy of the formed hole is improved.

<第1實施形態> <First Embodiment>

本實施形態的附孔積層體的製造方法的第1實施形態包括如下的孔形成步驟:對規定的層構成的加工前積層體實施雷射加工,而形成自加工前積層體的被鍍敷層側的表面到達第1金屬層表面的孔。 The first embodiment of the method for manufacturing a laminated body with holes according to this embodiment includes a hole forming step of performing laser processing on a pre-processed laminated body having a predetermined layer configuration to form a plated layer of the laminated body before processing. The side surface reaches the hole on the surface of the first metal layer.

以下,首先對本步驟中所使用的加工前積層體的各構成層(基板、第1金屬層、底層、被鍍敷層等)進行詳述,其後對孔形成步驟的程序進行詳述。 Hereinafter, each constituent layer (substrate, first metal layer, bottom layer, plated layer, etc.) of the pre-processed laminated body used in this step is described in detail first, and then the procedure of the hole formation step is described in detail.

<加工前積層體> <Laminated body before processing>

參照圖式對本步驟中所使用的加工前積層體進行說明。 The pre-processing laminated body used in this step will be described with reference to the drawings.

圖1之(A)是加工前積層體的示意剖面圖。圖1之(A)中,加工前積層體10依次包括基板12、第1金屬層14、底層16、及被鍍敷層18。 FIG. 1 (A) is a schematic cross-sectional view of a laminated body before processing. In FIG. 1A, the pre-processed laminated body 10 includes a substrate 12, a first metal layer 14, a bottom layer 16, and a plated layer 18 in this order.

以下,對各層的構成進行詳述。 Hereinafter, the configuration of each layer will be described in detail.

[基板] [Substrate]

基板12是用以支撐後述的各層的構件,可使用先前已知的任何基板(例如絕緣性基板。更具體而言,樹脂基板、陶瓷基板、玻璃基板)。 The substrate 12 is a member for supporting each layer described later, and any substrate (for example, an insulating substrate. More specifically, a resin substrate, a ceramic substrate, and a glass substrate) may be used.

更具體而言,可列舉:玻璃環氧材、雙馬來醯亞胺三嗪(Bismaleimide Triazine,BT)樹脂、聚醯亞胺膜、聚醯胺膜、液晶膜、芳族聚醯胺(aramid)等。其中,就尺寸穩定性或耐熱性等熱特性或機械特性的觀點而言,較佳為玻璃環氧材、BT樹脂。 More specific examples include glass epoxy materials, bismaleimide triazine (BT) resin, polyimide film, polyimide film, liquid crystal film, and aromatic polyamidide (aramid )Wait. Among these, from the viewpoint of thermal or mechanical properties such as dimensional stability and heat resistance, glass epoxy materials and BT resins are preferred.

[第1金屬層] [First metal layer]

第1金屬層14是設置於上述基板12上的金屬的層。該第1金屬層14主要作為配線基板中的金屬配線而發揮功能。該第1金屬層14可如圖1之(A)所示般設置成圖案狀,亦可設置於基板12的整個面上。再者,為了使第1金屬層14變成圖案狀,可使用公知的方法(減成法、半加成法(semi-additive process)等)。 The first metal layer 14 is a metal layer provided on the substrate 12. The first metal layer 14 mainly functions as metal wiring in a wiring substrate. The first metal layer 14 may be provided in a pattern as shown in FIG. 1A, or may be provided on the entire surface of the substrate 12. In order to make the first metal layer 14 into a pattern, a known method (a subtractive method, a semi-additive method, or the like) can be used.

另外,圖1之(A)中,僅於基板12的一面配置有第1金屬層14,但亦可於基板12的兩面配置有第1金屬層14。 In addition, in FIG. 1A, the first metal layer 14 is disposed on only one surface of the substrate 12, but the first metal layer 14 may be disposed on both surfaces of the substrate 12.

構成第1金屬層14的金屬的種類並無特別限制,例如可列舉:銅、銀、錫、鎳、金等。 The type of the metal constituting the first metal layer 14 is not particularly limited, and examples thereof include copper, silver, tin, nickel, and gold.

第1金屬層14的厚度並無特別限制,但就應用於多層基板的觀點而言,較佳為4 μm~50 μm左右。 The thickness of the first metal layer 14 is not particularly limited, but is preferably about 4 μm to 50 μm in terms of application to a multilayer substrate.

[底層(底塗層(primer layer))] [Underlayer (primer layer)]

底層16是為了提昇基板12(或後述的絕緣層30)與 被鍍敷層20之間的密接性而設置的層(較佳為絕緣層)。於該底層16中,至少包含具有含有氰基的重複單元的聚合物與金屬氧化物粒子。 The bottom layer 16 is for lifting the substrate 12 (or the insulating layer 30 described later) and A layer (preferably an insulating layer) provided by the adhesion between the plated layers 20. The bottom layer 16 includes at least a polymer having a cyano group-containing repeating unit and metal oxide particles.

以下,首先對構成底層16的材料(聚合物、金屬氧化物粒子等)進行詳述,其後對底層16的形成方法進行詳述。 Hereinafter, materials (polymers, metal oxide particles, etc.) constituting the underlayer 16 are described in detail first, and then a method of forming the underlayer 16 is described in detail.

(具有含有氰基的重複單元的聚合物) (Polymer having a repeating unit containing a cyano group)

底層16中所含有的聚合物具有含有氰基(-CN)的重複單元。 The polymer contained in the bottom layer 16 has a repeating unit containing a cyano group (-CN).

相對於聚合物中的所有重複單元,聚合物中的含有氰基的重複單元的含量為10莫耳%~60莫耳%。若為上述範圍內,則雷射加工時的孔的形狀精度優異,並且金屬層的密接性優異。其中,就金屬層的密接性更優異的觀點而言,含有氰基的重複單元的含量較佳為15莫耳%~55莫耳%,更佳為25莫耳%~55莫耳%。 The content of the cyano-containing repeating unit in the polymer is 10 mol% to 60 mol% relative to all the repeating units in the polymer. If it is in the said range, the hole shape precision at the time of laser processing will be excellent, and the adhesiveness of a metal layer will be excellent. Among them, from the viewpoint of more excellent adhesion of the metal layer, the content of the repeating unit containing a cyano group is preferably 15 mol% to 55 mol%, and more preferably 25 mol% to 55 mol%.

含有氰基的重複單元只要含有氰基,則其結構並無特別限定,但就容易合成聚合物、金屬膜的密接性更優異的觀點而言,較佳為由以下的式(1)所表示的重複單元。 The structure of the repeating unit containing a cyano group is not particularly limited as long as it contains a cyano group, but it is preferably represented by the following formula (1) from the viewpoint that the polymer can be easily synthesized and the adhesion of the metal film is more excellent. Repeating unit.

Figure TWI610814BD00001
Figure TWI610814BD00001

式(1)中,R7表示氫原子、或者經取代或未經取代 的烷基(例如甲基、乙基、丙基、丁基)。 In the formula (1), R 7 represents a hydrogen atom or a substituted or unsubstituted alkyl group (for example, methyl, ethyl, propyl, or butyl).

式(1)中,L4表示單鍵、或者經取代或未經取代的二價的有機基。作為二價的有機基,可列舉:經取代或未經取代的二價的脂肪族烴基(較佳為碳數1~8。例如亞甲基、伸乙基、伸丙基等伸烷基)、經取代或未經取代的二價的芳香族烴基(較佳為碳數6~12。例如伸苯基)、-O-、-S-、-SO2-、-N(R)-(R:烷基)、-CO-、-NH-、-COO-、-CONH-、或將這些組合而成的基(例如伸烷氧基、伸烷氧基羰基、伸烷基羰氧基等)等。其中,就金屬層的密接性更優異的觀點而言,更佳為單鍵。 In the formula (1), L 4 represents a single bond or a substituted or unsubstituted divalent organic group. Examples of the divalent organic group include a substituted or unsubstituted divalent aliphatic hydrocarbon group (preferably a carbon number of 1 to 8. For example, an alkylene group such as methylene, ethylene, or propyl) , Substituted or unsubstituted divalent aromatic hydrocarbon group (preferably 6 to 12 carbons, such as phenylene), -O-, -S-, -SO 2- , -N (R)-( R: alkyl), -CO-, -NH-, -COO-, -CONH-, or a combination of these (e.g., alkyleneoxy, alkyleneoxycarbonyl, alkylenecarbonyloxy, etc. )Wait. Among these, a single bond is more preferable from the viewpoint that the adhesion of the metal layer is more excellent.

另外,於聚合物中,亦可包含上述含有氰基的重複單元以外的重複單元。 The polymer may contain repeating units other than the cyano-containing repeating units described above.

例如,亦可具有源自以下單體的重複單元:芳香族乙烯基單體(例如苯乙烯、α-甲基苯乙烯、二乙烯基苯等)、共軛二烯單體(例如1,3-丁二烯、異戊二烯、2-乙基-1,3-丁二烯、2-正丙基-1,3-丁二烯、2,3-二甲基-1,3-丁二烯、1,3-戊二烯、1,3-己二烯等)、含有醯胺基的(甲基)丙烯酸單體(例如丙烯醯胺、甲基丙烯醯胺、N-(甲基)丙烯醯基嗎啉、N-乙烯基-2-吡咯啶酮等)、不飽和羧酸單體(例如反丁烯二酸、順丁烯二酸、丙烯酸、甲基丙烯酸等)、或其他單體(例如乙烯、丙烯、氯乙烯、偏二氯乙烯、乙酸乙烯酯、乙基乙烯基醚、丁基乙烯基醚等)。 For example, it may have repeating units derived from the following monomers: aromatic vinyl monomers (e.g., styrene, α-methylstyrene, divinylbenzene, etc.), conjugated diene monomers (e.g., 1, 3 -Butadiene, isoprene, 2-ethyl-1,3-butadiene, 2-n-propyl-1,3-butadiene, 2,3-dimethyl-1,3-butane Diene, 1,3-pentadiene, 1,3-hexadiene, etc.), (meth) acrylic monomers containing amidino groups (e.g. acrylamide, methacrylamide, N- (methyl ) Acrylomethylmorpholine, N-vinyl-2-pyrrolidone, etc.), unsaturated carboxylic acid monomers (e.g. fumaric acid, maleic acid, acrylic acid, methacrylic acid, etc.), or others Monomer (e.g. ethylene, propylene, vinyl chloride, vinylidene chloride, vinyl acetate, ethyl vinyl ether, butyl vinyl ether, etc.).

其中,就金屬膜的密接性更優異的觀點而言,較佳為聚合物具有源自共軛二烯單體(特佳為丁二烯)的重複單 元。 Among these, from the viewpoint that the adhesion of the metal film is more excellent, the polymer preferably has a repeating monomer derived from a conjugated diene monomer (particularly, butadiene). yuan.

具體而言,例如可列舉源自如以下所示的單體的單元。以下式中,R表示氫原子或甲基,X表示-O-或-NH-。 Specifically, the unit derived from the monomer shown below is mentioned, for example. In the following formula, R represents a hydrogen atom or a methyl group, and X represents -O- or -NH-.

Figure TWI610814BD00002
Figure TWI610814BD00002

聚合物的重量平均分子量並無特別限制,但就成膜性更優異的觀點而言,較佳為1000~70萬,更佳為2000~20萬。 The weight average molecular weight of the polymer is not particularly limited, but from the viewpoint of more excellent film-forming properties, it is preferably 1,000 to 700,000, and more preferably 2,000 to 200,000.

作為聚合物的具體例,例如可列舉:丁腈橡膠(Nitrile Butadiene Rubber,NBR)、含有羧基的腈橡膠(羧基丁腈橡膠(Carboxylated Nitrile Butadiene Rubber,XNBR))、 丙烯腈-丁二烯-異戊二烯橡膠(Arcylonitrile Butadiene Isoprene Rubber,NBIR),腈-丁二烯-苯乙烯共聚物(丙烯腈-丁二烯-苯乙烯(Acrylonitrile Butadiene Styrene,ABS)樹脂)等。其中,就本發明的效果更優異的觀點而言,較佳為NBR。 Specific examples of the polymer include a nitrile rubber (Nitrile Butadiene Rubber (NBR)), a nitrile rubber containing a carboxyl group (Carboxylated Nitrile Butadiene Rubber (XNBR)), Acrylonitrile-butadiene-isoprene rubber (Arcylonitrile Butadiene Isoprene Rubber, NBIR), nitrile-butadiene-styrene copolymer (Acrylonitrile Butadiene Styrene (ABS) resin) Wait. Among these, from the viewpoint that the effect of the present invention is more excellent, NBR is preferred.

底層16中的聚合物的含量並無特別限制,但就藉由雷射加工所形成的孔的形狀精度優異,並且積層於被鍍敷層18上的第2金屬層26的密接性優異的觀點而言,相對於底層總質量,較佳為35質量%~80質量%,更佳為45質量%~80質量%。 The content of the polymer in the bottom layer 16 is not particularly limited, but from the viewpoints of excellent shape accuracy of the holes formed by laser processing and excellent adhesion of the second metal layer 26 laminated on the plated layer 18 In terms of the total mass of the bottom layer, it is preferably 35 mass% to 80 mass%, and more preferably 45 mass% to 80 mass%.

(金屬氧化物粒子) (Metal oxide particles)

底層16中所含有的金屬氧化物粒子的粒徑(直徑)為50 nm~2000 nm。若為該範圍內,則藉由雷射加工所形成的孔的形狀精度優異,並且積層於被鍍敷層18上的第2金屬層26的密接性優異。其中,就孔的形狀精度或金屬層的密接性更優異的觀點而言,較佳為50 nm~1000 nm,更佳為50 nm~500 nm。 The particle diameter (diameter) of the metal oxide particles contained in the bottom layer 16 is 50 nm to 2000 nm. Within this range, the shape accuracy of the hole formed by laser processing is excellent, and the adhesion of the second metal layer 26 laminated on the plated layer 18 is excellent. Among them, from the viewpoint of better hole shape accuracy and adhesion of the metal layer, it is preferably 50 nm to 1000 nm, and more preferably 50 nm to 500 nm.

當金屬氧化物粒子的粒徑未滿50 nm時,藉由雷射加工所形成的孔的形狀精度欠佳。當金屬氧化物粒子的粒徑超過2000 nm時,所形成的第2金屬層26的密接性欠佳。 When the particle diameter of the metal oxide particles is less than 50 nm, the shape accuracy of the holes formed by laser processing is not good. When the particle diameter of the metal oxide particles exceeds 2000 nm, the adhesion of the formed second metal layer 26 is not good.

另外,上述金屬氧化物粒子的粒徑的測定方法是藉由利用掃描式電子顯微鏡(Scanning Electron Microscope,SEM)的觀察來測定至少100個以上的金屬氧化物粒子的粒徑,並對這些進行算術平均而求出粒徑。當金屬氧化物 粒子的形狀並非圓形時(例如為橢圓形時),將其長徑設為粒徑。 In addition, in the method for measuring the particle diameter of the metal oxide particles, the particle diameter of at least 100 or more metal oxide particles is measured by observation with a scanning electron microscope (SEM), and these are calculated arithmetically. The average particle diameter was calculated. When metal oxide When the shape of the particles is not circular (for example, when the shape is elliptical), the major diameter is set to the particle diameter.

相對於聚合物及金屬氧化物粒子的合計質量,底層16中的金屬氧化物粒子的含量為20質量%~60質量%。若為該範圍內,則藉由雷射加工所形成的孔的形狀精度優異,並且積層於被鍍敷層18上的第2金屬層26的密接性優異。其中,就孔的形狀精度或金屬層的密接性更優異的觀點而言,較佳為20質量%~50質量%,更佳為30質量%~50質量%。 The content of the metal oxide particles in the bottom layer 16 is 20% to 60% by mass based on the total mass of the polymer and the metal oxide particles. Within this range, the shape accuracy of the hole formed by laser processing is excellent, and the adhesion of the second metal layer 26 laminated on the plated layer 18 is excellent. Among these, from the viewpoint that the accuracy of the shape of the hole or the adhesion of the metal layer is more excellent, it is preferably 20% by mass to 50% by mass, and more preferably 30% by mass to 50% by mass.

當金屬氧化物粒子的含量未滿20質量%時,藉由雷射加工所形成的孔的形狀精度欠佳。當金屬氧化物粒子的含量超過60質量%時,所形成的第2金屬層26的密接性欠佳。 When the content of the metal oxide particles is less than 20% by mass, the shape accuracy of the holes formed by laser processing is not good. When the content of the metal oxide particles exceeds 60% by mass, the adhesion of the formed second metal layer 26 is not good.

金屬氧化物粒子的種類並無特別限制,例如可列舉包含選自由週期表4A元素、5A元素、3B元素、及4B元素所組成的組群中的至少1種金屬元素的金屬氧化物粒子。其中,作為可廉價地獲得的金屬氧化物粒子,可列舉包含選自由矽、鋁、及鈦所組成的組群中的至少1種金屬元素的金屬氧化物粒子。 The type of the metal oxide particles is not particularly limited, and examples thereof include metal oxide particles containing at least one metal element selected from the group consisting of elements 4A, 5A, 3B, and 4B of the periodic table. Among them, metal oxide particles that can be obtained at low cost include metal oxide particles containing at least one metal element selected from the group consisting of silicon, aluminum, and titanium.

再者,作為金屬氧化物粒子的具體例,例如可列舉:氧化鈦、氧化鋅、氧化矽、氧化鉛、氧化鎢、氧化錫、氧化銦、氧化鈮、氧化鎘、氧化鉍、氧化鋁、氧化鎵(III)、氧化亞鐵等。 Specific examples of the metal oxide particles include titanium oxide, zinc oxide, silicon oxide, lead oxide, tungsten oxide, tin oxide, indium oxide, niobium oxide, cadmium oxide, bismuth oxide, aluminum oxide, and oxide. Gallium (III), ferrous oxide, etc.

(底層的形成方法) (Formation method of the bottom layer)

底層16的形成方法並無特別限制,可使用公知的方法。例如可列舉:將包含上述聚合物與上述金屬氧化物粒子的底層形成用組成物塗佈於附有第1金屬層14的基板12上,從而形成底層16的方法(塗佈方法);或將含有金屬氧化物粒子的聚合物組成物直接層壓於附有第1金屬層14的基板12上的方法等。就底層16的膜厚的控制更容易的觀點而言,較佳為塗佈方法。 The method for forming the bottom layer 16 is not particularly limited, and a known method can be used. For example, a method (coating method) in which the underlayer-forming composition including the polymer and the metal oxide particles is coated on the substrate 12 with the first metal layer 14 formed thereon (coating method) may be mentioned; A method in which a polymer composition containing metal oxide particles is directly laminated on the substrate 12 on which the first metal layer 14 is attached, and the like. From the viewpoint that the control of the film thickness of the underlayer 16 is easier, a coating method is preferred.

當實施塗佈方法時,可使用公知的塗佈的方法(例如旋塗、浸塗等)。 When a coating method is implemented, a well-known coating method (for example, spin coating, dip coating, etc.) can be used.

當使用底層形成用組成物時,視需要亦可使該組成物含有溶劑。作為所使用的溶劑,只要可使聚合物及金屬氧化物粒子溶解、分散即可,例如可列舉酮系溶劑(例如環戊酮等)。 When a composition for forming a primer layer is used, the composition may contain a solvent as necessary. The solvent to be used may be any polymer that can dissolve and disperse the polymer and metal oxide particles, and examples thereof include ketone solvents (for example, cyclopentanone).

再者,為了使金屬氧化物粒子分散,視需要亦可使用公知的界面活性劑(分散劑)。 In order to disperse the metal oxide particles, a known surfactant (dispersant) may be used as necessary.

再者,如與上述底層16的情況相同般,相對於聚合物及金屬氧化物粒子的合計質量,底層形成用組成物中的金屬氧化物粒子的含量較佳為20質量%~60質量%,更佳為20質量%~50質量%,進而更佳為30質量%~50質量%。 In addition, as in the case of the underlayer 16, the content of the metal oxide particles in the composition for forming the underlayer is preferably 20% to 60% by mass based on the total mass of the polymer and the metal oxide particles. It is more preferably 20% by mass to 50% by mass, and even more preferably 30% by mass to 50% by mass.

再者,視需要亦可於塗佈後實施加熱處理,而進行溶劑的去除或底層的硬化。 Furthermore, if necessary, a heat treatment may be performed after coating to remove the solvent or harden the bottom layer.

底層16的厚度並無特別限制,但就孔的形狀精度或金屬層的密接性更優異的觀點而言,較佳為0.1 μm~40 μm,更佳為0.1 μm~20 μm。 The thickness of the bottom layer 16 is not particularly limited, but it is preferably 0.1 μm to 40 μm, and more preferably 0.1 μm to 20 μm from the viewpoint of better hole shape accuracy and adhesion of the metal layer.

[被鍍敷層] [Plating layer]

被鍍敷層18是設置於上述底層16上,並具有與鍍敷觸媒或其前驅物相互作用的官能基(以後,亦適宜稱為相互作用性基)的層。 The plated layer 18 is a layer provided on the underlayer 16 and having a functional group (hereinafter, also referred to as an interactive group) that interacts with a plating catalyst or a precursor thereof.

被鍍敷層18對應於所含有的與鍍敷觸媒或其前驅物相互作用的官能基的功能,而高效地吸附後述的鍍敷觸媒或其前驅物。即,被鍍敷層18作為鍍敷觸媒(或其前驅物)的良好的接受層而發揮功能。其結果,可獲得與形成於被鍍敷層18的表面的後述的第2金屬層26的優異的密接性。 The to-be-plated layer 18 efficiently absorbs a plating catalyst or a precursor thereof which will be described later in accordance with the function of a functional group contained in the plating catalyst or a precursor thereof. That is, the plated layer 18 functions as a good receiving layer for a plating catalyst (or a precursor thereof). As a result, excellent adhesion with the second metal layer 26 described later formed on the surface of the plated layer 18 can be obtained.

相互作用性基是與鍍敷觸媒或其前驅物相互作用的官能基,可使用可與鍍敷觸媒或其前驅物形成靜電相互作用的官能基,或可與鍍敷觸媒或其前驅物形成配位的含氮官能基、含硫官能基、含氧官能基等。作為相互作用性基,例如亦可列舉非解離性官能基(不會因解離而生成質子的官能基)等。 The interaction group is a functional group that interacts with the plating catalyst or its precursor, and a functional group that can form an electrostatic interaction with the plating catalyst or its precursor can be used, or can interact with the plating catalyst or its precursor The compounds form coordinated nitrogen-containing functional groups, sulfur-containing functional groups, oxygen-containing functional groups, and the like. Examples of the interactive group include non-dissociable functional groups (functional groups that do not generate protons due to dissociation) and the like.

作為相互作用性基,更具體而言,可列舉胺基、醯胺基、醯亞胺基、脲基、三級胺基、銨基、甲脒(amidino)基、三嗪環、三唑環、苯并三唑基、咪唑基、苯并咪唑基、喹啉基、吡啶基、嘧啶基、吡嗪基、喹唑啉基、喹噁啉基、嘌呤基、三嗪基、哌啶基、哌嗪基、吡咯啶基、吡唑基、苯胺基、含有烷基胺結構的基、含有異三聚氰酸結構的基、硝基、亞硝基、偶氮基、重氮基、疊氮基、氰基、氰酸酯基(R-O-CN)等含氮官能基;醚基、羥基、酚性羥基、羧基、碳酸酯基、羰基、酯基、含有N-氧化物結構的基、含 有S-氧化物結構的基、含有N-羥基結構的基等含氧官能基;噻吩基、硫醇基、硫脲基、三聚硫氰酸基、苯并噻唑基、巰基三嗪基、硫醚基、硫氧基、亞碸基、碸基、亞硫酸(sulfite)基、含有碸亞胺結構的基、含有氧化鋶鹽結構的基、磺酸基、含有磺酸酯結構的基等含硫官能基;磷酸酯基、磷醯胺基、膦基、含有磷酸酯結構的基等含磷官能基;含有氯、溴等鹵素原子的基等,於可採用鹽結構的官能基中,亦可使用這些官能基的鹽。 Specific examples of the interacting group include an amino group, an amido group, an amido group, a urea group, a tertiary amino group, an ammonium group, an amidino group, a triazine ring, and a triazole ring. , Benzotriazolyl, imidazolyl, benzimidazolyl, quinolinyl, pyridyl, pyrimidinyl, pyrazinyl, quinazolinyl, quinoxalinyl, purinyl, triazinyl, piperidinyl, Piperazinyl, pyrrolidinyl, pyrazolyl, aniline, alkylamine-containing group, isocyanuric group-containing group, nitro, nitroso, azo, diazo, azide Nitrogen-containing functional groups such as alkyl, cyano, and cyanate ester (RO-CN); ether, hydroxyl, phenolic hydroxyl, carboxyl, carbonate, carbonyl, ester, and N-oxide-containing groups. An oxygen-containing functional group such as a group having an S-oxide structure and a group containing an N-hydroxy structure; thienyl, thiol, thiourea, trimeric thiocyanate, benzothiazolyl, mercaptotriazine, Thioether group, thiooxy group, fluorenylene group, fluorenyl group, sulfite group, sulfonium group-containing group, sulfonium oxide group-containing group, sulfonate group, sulfonate group-containing group, etc. Sulfur-containing functional groups; phosphorus-containing functional groups such as phosphate groups, phosphatidylamine groups, phosphine groups, and phosphate group-containing groups; groups containing halogen atoms such as chlorine and bromine among the functional groups that can adopt a salt structure, Salts of these functional groups can also be used.

其中,就極性高、對於鍍敷觸媒或其前驅物等的吸附能力高而言,特佳為羧基、磺酸基、磷酸基、及硼酸基等離子性極性基,或者醚基、或氰基,更佳為羧基或氰基。再者,亦可包含2種以上的這些基。 Among them, ionic polar groups such as a carboxyl group, a sulfonic acid group, a phosphate group, and a boric acid group, or an ether group or a cyano group are particularly preferred in terms of high polarity and high adsorption ability for a plating catalyst or its precursor. , More preferably a carboxyl group or a cyano group. Furthermore, two or more of these groups may be included.

構成被鍍敷層18的材料並無特別限制,例如可列舉熱硬化性樹脂或熱塑性樹脂等絕緣性樹脂。只要於這些材料中含有上述相互作用性基即可。 The material constituting the plated layer 18 is not particularly limited, and examples thereof include insulating resins such as thermosetting resins and thermoplastic resins. These materials need only contain the above-mentioned interactive group.

更具體而言,作為熱硬化性樹脂,例如可列舉:環氧樹脂、酚樹脂、聚醯亞胺樹脂、聚酯樹脂、雙馬來醯亞胺樹脂、聚烯烴樹脂、異氰酸酯樹脂等。作為熱塑性樹脂,例如可列舉:苯氧基樹脂、聚醚碸、聚碸、聚苯碸(polyphenylene sulfone)、聚苯硫醚(polyphenylene sulfide)、聚苯醚、聚醚醯亞胺等。 More specifically, examples of the thermosetting resin include epoxy resin, phenol resin, polyimide resin, polyester resin, bismaleimide resin, polyolefin resin, and isocyanate resin. Examples of the thermoplastic resin include phenoxy resin, polyether fluorene, polyfluorene, polyphenylene sulfone, polyphenylene sulfide, polyphenylene ether, and polyether fluorene imine.

被鍍敷層18的厚度並無特別限制,但就第2金屬層26的密接性更優異的觀點而言,較佳為0.02 μm~5.0 μm,更佳為0.05 μm~2.0 μm。 The thickness of the plated layer 18 is not particularly limited, but from the viewpoint that the adhesion of the second metal layer 26 is more excellent, it is preferably 0.02 μm to 5.0 μm, and more preferably 0.05 μm to 2.0 μm.

被鍍敷層18的形成方法並無特別限制,使用塗佈法、轉印法、印刷法等公知的層形成方法。 The method for forming the plated layer 18 is not particularly limited, and a known layer forming method such as a coating method, a transfer method, or a printing method is used.

具體而言,可將具有與鍍敷觸媒或其前驅物相互作用的官能基的聚合物層壓於底層16上。另外,亦可使用含有該聚合物的組成物(以後,亦適宜稱為被鍍敷層形成用組成物)來形成。當使用該組成物時,可列舉如下的方法:將所使用的基板浸漬於被鍍敷層形成用組成物中、或將被鍍敷層形成用組成物塗佈於底層16上,視需要進行加熱處理或曝光處理,而於底層16上形成被鍍敷層18。 Specifically, a polymer having a functional group that interacts with a plating catalyst or a precursor thereof can be laminated on the underlayer 16. Alternatively, a composition containing the polymer (hereinafter, also referred to as a composition for forming a plated layer) may be used. When this composition is used, the following methods can be exemplified: immersing the substrate to be used in the composition for forming a plated layer, or coating the composition for forming a plated layer on the underlayer 16 as necessary. The plated layer 18 is formed on the bottom layer 16 by a heat treatment or an exposure treatment.

(被鍍敷層形成方法的適宜形態) (A suitable form of the method for forming a plated layer)

其中,作為被鍍敷層18的形成方法的適宜的形態,可列舉如下的方法:使用含有具有與鍍敷觸媒或其前驅物相互作用的官能基、及聚合性基的聚合物的被鍍敷層形成用組成物,於底層16上形成包含該聚合物的層,並對包含該聚合物的層賦予能量,而形成被鍍敷層18。若為該形態,則於被鍍敷層18與底層16之間容易產生化學鍵結等,兩者的密接性進一步提昇,作為結果,第2金屬層26的密接性更優異。 Among these, as a suitable form of the formation method of the to-be-plated layer 18, the method of using the to-be-plated using the polymer containing the functional group which interacts with a plating catalyst or its precursor, and a polymerizable group is mentioned. The coating layer-forming composition forms a layer containing the polymer on the underlayer 16 and applies energy to the layer containing the polymer to form a plated layer 18. With this configuration, chemical bonding or the like is likely to occur between the plated layer 18 and the underlayer 16, and the adhesion between the two is further improved. As a result, the adhesion of the second metal layer 26 is more excellent.

首先,對該形態中所使用的材料(聚合物、被鍍敷層形成用組成物等)進行詳述,其後對該形態的程序進行說明。 First, the materials (polymer, composition for forming a plated layer, etc.) used in this embodiment will be described in detail, and the procedure of this embodiment will be described later.

(聚合物) (polymer)

所使用的聚合物具有相互作用性基與聚合性基。 The polymer used has an interactive group and a polymerizable group.

關於相互作用性基是如上所述。 The interaction group is as described above.

聚合性基是藉由能量賦予,而可於聚合物彼此、或聚合物與底層16之間形成化學鍵結的官能基,例如可列舉自由基聚合性基、陽離子聚合性基等。其中,就反應性的觀點而言,較佳為自由基聚合性基。作為自由基聚合性基,例如可列舉:丙烯酸酯基(丙烯醯氧基)、甲基丙烯酸酯基(甲基丙烯醯氧基)、衣康酸酯基、巴豆酸酯基、異巴豆酸酯基、順丁烯二酸酯基等不飽和羧酸酯基、苯乙烯基、乙烯基、丙烯醯胺基、甲基丙烯醯胺基等。其中,較佳為甲基丙烯酸酯基、丙烯酸酯基、乙烯基、苯乙烯基、丙烯醯胺基、甲基丙烯醯胺基,更佳為甲基丙烯酸酯基、丙烯酸酯基、苯乙烯基。 The polymerizable group is a functional group capable of forming a chemical bond between the polymers or between the polymer and the bottom layer 16 through energy imparting, and examples thereof include a radical polymerizable group and a cation polymerizable group. Among these, a radical polymerizable group is preferred from the viewpoint of reactivity. Examples of the radical polymerizable group include an acrylate group (acrylic acid group), a methacrylate group (methacrylic acid group), an itaconate group, a crotonic acid group, and an isocrotonic acid group. Unsaturated carboxylic acid ester groups such as methyl, maleic acid ester groups, styryl, vinyl, acrylamido, methacrylamido, and the like. Among them, a methacrylate group, an acrylate group, a vinyl group, a styryl group, an acrylamide group, and a methacrylamide group are preferable, and a methacrylate group, an acrylate group, and a styrene group are more preferable .

聚合物的重量平均分子量並無特別限制,但就溶解性等處理性更優異的觀點而言,較佳為1000以上、70萬以下,更佳為2000以上、20萬以下。尤其,就聚合靈敏度的觀點而言,較佳為20000以上。 The weight average molecular weight of the polymer is not particularly limited, but from the viewpoint of better handling properties such as solubility, it is preferably 1,000 or more and 700,000 or less, and more preferably 2,000 or more and 200,000 or less. In particular, from the viewpoint of polymerization sensitivity, it is preferably 20,000 or more.

具有此種聚合性基及相互作用性基的聚合物的合成方法並無特別限制,使用公知的合成方法(參照日本專利公開2009-280905號的段落[0097]~段落[0125])。 The method for synthesizing a polymer having such a polymerizable group and an interactive group is not particularly limited, and a known synthesis method is used (see paragraphs [0097] to [0125] of Japanese Patent Publication No. 2009-280905).

(聚合物的適宜形態1) (Appropriate Form 1 of Polymer)

作為聚合物的第1種較佳的形態,可列舉包含由下述式(a)所表示的具有聚合性基的單元(以下,亦適宜稱為聚合性基單元)、及由下述式(b)所表示的具有相互作用性基的單元(以下,亦適宜稱為相互作用性基單元)的共聚物。再者,單元是指重複單元。 As a first preferred aspect of the polymer, a unit including a polymerizable group (hereinafter, also referred to as a polymerizable group unit) represented by the following formula (a), and a formula ( A copolymer of a unit having an interactive group (hereinafter, also referred to as an interactive group unit) represented by b). Furthermore, the unit means a repeating unit.

Figure TWI610814BD00003
Figure TWI610814BD00003

上述式(a)及式(b)中,R1~R5分別獨立地表示氫原子、或者經取代或未經取代的烷基(例如甲基、乙基、丙基、丁基等)。再者,取代基並無特別限制,可列舉甲氧基、氯原子、溴原子、或氟原子等。 In the formulas (a) and (b), R 1 to R 5 each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group (for example, methyl, ethyl, propyl, or butyl). The substituent is not particularly limited, and examples thereof include a methoxy group, a chlorine atom, a bromine atom, and a fluorine atom.

再者,作為R1,較佳為氫原子、甲基、或經溴原子取代的甲基。作為R2,較佳為氫原子、甲基、或經溴原子取代的甲基。作為R3,較佳為氫原子。作為R4,較佳為氫原子。作為R5,較佳為氫原子、甲基、或經溴原子取代的甲基。 In addition, as R 1 , a hydrogen atom, a methyl group, or a methyl group substituted with a bromine atom is preferable. R 2 is preferably a hydrogen atom, a methyl group, or a methyl group substituted with a bromine atom. R 3 is preferably a hydrogen atom. R 4 is preferably a hydrogen atom. R 5 is preferably a hydrogen atom, a methyl group, or a methyl group substituted with a bromine atom.

上述式(a)及式(b)中,X、Y、及Z分別獨立地表示單鍵、或者經取代或未經取代的二價的有機基。作為二價的有機基,可列舉:經取代或未經取代的二價的脂肪族烴基(較佳為碳數1~8。例如亞甲基、伸乙基、伸丙基等伸烷基)、經取代或未經取代的二價的芳香族烴基(較佳為碳數6~12。例如伸苯基)、-O-、-S-、-SO2-、-N(R)-(R:烷基)、-CO-、-NH-、-COO-、-CONH-、或將這些組合而 成的基(例如伸烷氧基、伸烷氧基羰基、伸烷基羰氧基等)等。 In the formulae (a) and (b), X, Y, and Z each independently represent a single bond or a substituted or unsubstituted divalent organic group. Examples of the divalent organic group include a substituted or unsubstituted divalent aliphatic hydrocarbon group (preferably a carbon number of 1 to 8. For example, an alkylene group such as methylene, ethylene, or propyl) , Substituted or unsubstituted divalent aromatic hydrocarbon group (preferably 6 to 12 carbons, such as phenylene), -O-, -S-, -SO 2- , -N (R)-( R: alkyl), -CO-, -NH-, -COO-, -CONH-, or a combination of these (e.g., alkyleneoxy, alkyleneoxycarbonyl, alkylenecarbonyloxy, etc. )Wait.

就容易合成聚合物、被鍍敷層的功能(觸媒吸附性、耐水解性)優異、金屬層的密接性更優異的觀點而言,X、Y、及Z較佳為單鍵、酯基(-COO-)、醯胺基(-CONH-)、醚基(-O-)、或者經取代或未經取代的二價的芳香族烴基,更佳為單鍵、酯基(-COO-)、醯胺基(-CONH-)。 From the viewpoints that the polymer can be easily synthesized, the function of the plated layer (catalyst adsorption, hydrolysis resistance) is excellent, and the adhesion of the metal layer is more excellent, X, Y, and Z are preferably single bonds or ester groups. (-COO-), amido (-CONH-), ether (-O-), or a substituted or unsubstituted divalent aromatic hydrocarbon group, more preferably a single bond, an ester group (-COO- ), Amido (-CONH-).

上述式(a)及式(b)中,L1及L2分別獨立地表示單鍵、或者經取代或未經取代的二價的有機基。二價的有機基的定義與上述X、Y、及Z中所述的二價的有機基的定義相同。 In the formulas (a) and (b), L 1 and L 2 each independently represent a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group is the same as the definition of the divalent organic group described in X, Y, and Z.

就容易合成聚合物、被鍍敷層的功能(觸媒吸附性、耐水解性)優異、金屬層的密接性更優異的觀點而言,L1較佳為脂肪族烴基、或者具有胺基甲酸酯鍵或脲鍵的二價的有機基(例如脂肪族烴基),其中,較佳為總碳數1~9者。再者,此處所謂L1的總碳數,是指由L1所表示的經取代或未經取代的二價的有機基中所含有的總碳原子數。 From the viewpoints that the polymer can be easily synthesized, the function of the plated layer (catalyst adsorption, hydrolysis resistance) is excellent, and the adhesion of the metal layer is more excellent, L 1 is preferably an aliphatic hydrocarbon group or an amino group. Among divalent organic groups (e.g., aliphatic hydrocarbon groups) having an ester bond or a urea bond, among them, those having a total carbon number of 1 to 9 are preferred. The total carbon number of L 1 herein means the total number of carbon atoms contained in the substituted or unsubstituted divalent organic group represented by L 1 .

另外,就容易合成聚合物、被鍍敷層的功能(觸媒吸附性、耐水解性)優異、金屬層的密接性更優異的觀點而言,L2較佳為單鍵、或者二價的脂肪族烴基、二價的芳香族烴基、或將這些組合而成的基。其中,L2較佳為單鍵、或總碳數1~15,特佳為未經取代。再者,此處所謂L2的總碳數,是指由L2所表示的經取代或未經取代的二價的有機基中所含有的總碳原子數。 In addition, from the viewpoints that the polymer can be easily synthesized, the function of the plated layer (catalyst adsorption, hydrolysis resistance) is excellent, and the adhesion of the metal layer is more excellent, L 2 is preferably a single bond or a bivalent An aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, or a combination of these. Among them, L 2 is preferably a single bond or a total carbon number of 1 to 15, particularly preferably unsubstituted. In addition, the total carbon number of L 2 here means the total number of carbon atoms contained in a substituted or unsubstituted divalent organic group represented by L 2 .

上述式(b)中,W表示與鍍敷觸媒或其前驅物相互作用的官能基。該官能基的定義與上述相互作用性基的定義相同。 In the formula (b), W represents a functional group that interacts with a plating catalyst or a precursor thereof. The definition of this functional group is the same as the definition of the said interactive group.

較佳為相對於聚合物中的所有單元,含有5莫耳%~50莫耳%的上述聚合性基單元,更佳為5莫耳%~40莫耳%。若未滿5莫耳%,則有時反應性(硬化性、聚合性)會下降,若超過50莫耳%,則於合成時容易凝膠化而難以合成。 The polymerizable unit preferably contains 5 to 50 mol% of all the units in the polymer, and more preferably 5 to 40 mol%. If it is less than 5 mol%, the reactivity (curability, polymerizability) may decrease, and if it exceeds 50 mol%, it is likely to gel during synthesis and difficult to synthesize.

另外,就對於鍍敷觸媒或其前驅物的吸附性的觀點而言,較佳為相對於聚合物中的所有單元,含有5莫耳%~95莫耳%的上述相互作用性基單元,更佳為10莫耳%~95莫耳%。 In addition, from the viewpoint of the adsorptivity of the plating catalyst or its precursor, it is preferable to contain the above-mentioned interactive base unit of 5 mol% to 95 mol% with respect to all units in the polymer. More preferably, it is 10 mol% to 95 mol%.

(聚合物的適宜形態2) (Polymer Appropriate Form 2)

作為聚合物的第2種較佳的形態,可列舉包含由下述式(A)、式(B)、及式(C)所表示的單元的共聚物。 As a second preferable aspect of the polymer, a copolymer including a unit represented by the following formula (A), formula (B), and formula (C) is mentioned.

Figure TWI610814BD00004
Figure TWI610814BD00004

由式(A)所表示的單元與由上述式(a)所表示的單 元相同,各基的說明亦相同。 The unit represented by the formula (A) and the unit represented by the above formula (a) The elements are the same, and the explanations of the bases are the same.

由式(B)所表示的單元中的R5、X及L2與由上述式(b)所表示的單元中的R5、X及L2相同,各基的說明亦相同。 (B) a unit represented by R 5, X, and L 2 and, X and L by the same formula unit represented by the above formula (b) in R 5 2, the description of each group are also the same.

式(B)中的Wa表示除由後述的V所表示的親水性基或其前驅物基以外的與鍍敷觸媒或其前驅物相互作用的官能基。其中,較佳為氰基、醚基。 Wa in formula (B) represents a functional group that interacts with a plating catalyst or a precursor thereof other than a hydrophilic group or a precursor group thereof represented by V described later. Among them, a cyano group and an ether group are preferred.

式(C)中,R6分別獨立地表示氫原子、或者經取代或未經取代的烷基。 In the formula (C), R 6 each independently represents a hydrogen atom or a substituted or unsubstituted alkyl group.

式(C)中,U表示單鍵、或者經取代或未經取代的二價的有機基。二價的有機基的定義與由上述X、Y及Z所表示的二價的有機基的定義相同。就容易合成聚合物、被鍍敷層的功能(觸媒吸附性、耐水解性)優異、金屬層的密接性更優異的觀點而言,U較佳為單鍵、酯基(-COO-)、醯胺基(-CONH-)、醚基(-O-)、或者經取代或未經取代的二價的芳香族烴基。 In Formula (C), U represents a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group is the same as the definition of the divalent organic group represented by X, Y, and Z described above. From the viewpoints that polymers can be easily synthesized, the function of the plated layer (catalyst adsorption, hydrolysis resistance) is excellent, and the adhesion of the metal layer is more excellent, U is preferably a single bond or an ester group (-COO-) , Amido (-CONH-), ether (-O-), or a substituted or unsubstituted divalent aromatic hydrocarbon group.

式(C)中,L3表示單鍵、或者經取代或未經取代的二價的有機基。二價的有機基的定義與由上述L1及L2所表示的二價的有機基的定義相同。就容易合成聚合物、被鍍敷層的功能(觸媒吸附性、耐水解性)優異、金屬層的密接性更優異的觀點而言,L3較佳為單鍵、或者二價的脂肪族烴基、二價的芳香族烴基、或將這些組合而成的基。 In the formula (C), L 3 represents a single bond or a substituted or unsubstituted divalent organic group. The definition of the divalent organic group is the same as the definition of the divalent organic group represented by the above-mentioned L 1 and L 2 . From the viewpoints that the polymer can be easily synthesized, the function of the plated layer (catalyst adsorption, hydrolysis resistance) is excellent, and the adhesion of the metal layer is more excellent, L 3 is preferably a single bond or a divalent aliphatic A hydrocarbon group, a divalent aromatic hydrocarbon group, or a combination of these.

式(C)中,V表示親水性基或其前驅物基。所謂親水性基,只要是顯示親水性的基,則並無特別限定,例如 可列舉羥基、羧酸基等。另外,所謂親水性基的前驅物基,是指藉由規定的處理(例如,利用酸或鹼進行處理)而產生親水性基的基,例如可列舉由THP(2-四氫吡喃基)保護的羧基等。 In formula (C), V represents a hydrophilic group or a precursor group thereof. The hydrophilic group is not particularly limited as long as it is a group that exhibits hydrophilicity. For example, Examples thereof include a hydroxyl group and a carboxylic acid group. The precursor group of a hydrophilic group refers to a group that generates a hydrophilic group by a predetermined treatment (for example, treatment with an acid or an alkali), and examples thereof include THP (2-tetrahydropyranyl) Protected carboxyl, etc.

就被鍍敷層容易被各種水性處理液或鍍敷液潤濕的觀點而言,親水性基較佳為離子性極性基。作為離子性極性基,具體而言,可列舉羧酸基、磺酸基、磷酸基、硼酸基。其中,就酸性適度(不分解其他官能基)這一觀點而言,較佳為羧酸基。 From the viewpoint that the plated layer is easily wetted with various aqueous treatment liquids or plating liquids, the hydrophilic group is preferably an ionic polar group. Specific examples of the ionic polar group include a carboxylic acid group, a sulfonic acid group, a phosphate group, and a boric acid group. Among them, a carboxylic acid group is preferred from the viewpoint of moderate acidity (without decomposing other functional groups).

上述聚合物的第2種較佳的形態中的各單元的較佳的含量如下所述。 The preferable content of each unit in the 2nd preferable aspect of the said polymer is as follows.

就反應性(硬化性、聚合性)及抑制合成時的凝膠化的觀點而言,較佳為相對於聚合物中的所有單元,含有5莫耳%~50莫耳%的由式(A)所表示的單元,更佳為5莫耳%~30莫耳%。 From the viewpoints of reactivity (curability, polymerizability) and inhibition of gelation during synthesis, it is preferred that the formula (A) contains 5 mol% to 50 mol% with respect to all units in the polymer. The unit indicated by) is more preferably 5 mol% to 30 mol%.

就對於鍍敷觸媒或其前驅物的吸附性的觀點而言,較佳為相對於聚合物中的所有單元,含有5莫耳%~75莫耳%的由式(B)所表示的單元,更佳為10莫耳%~70莫耳%。 From the viewpoint of the adsorptivity of the plating catalyst or its precursor, it is preferable that the unit represented by the formula (B) contains 5 mol% to 75 mol% of all units in the polymer. , More preferably 10 mol% to 70 mol%.

就利用水溶液的顯影性與耐濕密接性的觀點而言,較佳為相對於聚合物中的所有單元,含有10莫耳%~70莫耳%的由式(C)所表示的單元,更佳為20莫耳%~60莫耳%,特佳為30莫耳%~50莫耳%。 From the viewpoint of utilizing the developability of an aqueous solution and the wet-tightness, it is preferable that the unit represented by the formula (C) contains 10 mol% to 70 mol% of all units in the polymer, and more preferably It is preferably 20 mol% to 60 mol%, and particularly good is 30 mol% to 50 mol%.

作為上述聚合物的具體例,例如可列舉:日本專利特 開2009-007540號公報的段落[0106]~段落[0112]中所記載的聚合物、日本專利特開2006-135271號公報的段落[0065]~段落[0070]中所記載的聚合物、US2010-080964號的段落[0030]~段落[0108]中所記載的聚合物等。 Specific examples of the polymer include, for example, Japanese Patent A polymer described in paragraphs [0106] to [0112] of 2009-007540, a polymer described in paragraphs [0065] to [0070] of Japanese Patent Laid-Open No. 2006-135271, and US2010 The polymers described in paragraphs [0030] to [0108] of No.-080964.

該聚合物可藉由公知的方法(例如,上述所列舉的文獻中的方法)來製造。 This polymer can be manufactured by a well-known method (for example, the method in the literature mentioned above).

(被鍍敷層形成用組成物) (Composition for forming a plated layer)

被鍍敷層形成用組成物中含有上述聚合物。 The above-mentioned polymer is contained in the composition for forming a plated layer.

被鍍敷層形成用組成物中的聚合物的含量並無特別限制,但相對於組成物總量,較佳為2質量%~50質量%,更佳為5質量%~30質量%。若為上述範圍內,則組成物的處理性優異,容易控制被鍍敷層的層厚。 The content of the polymer in the composition for forming a plated layer is not particularly limited, but it is preferably 2% to 50% by mass, and more preferably 5% to 30% by mass relative to the total amount of the composition. If it is in the said range, the handleability of a composition will be excellent and it will be easy to control the layer thickness of a to-be-plated layer.

就處理性的觀點而言,較佳為於被鍍敷層形成用組成物中含有溶劑。 From the viewpoint of handleability, it is preferable to include a solvent in the composition for forming a plated layer.

可使用的溶劑並無特別限定,例如可列舉水、甲醇、乙醇、丙醇、乙二醇、1-甲氧基-2-丙醇、甘油、丙二醇單甲醚等醇系溶劑,乙酸等酸,丙酮、甲基乙基酮、環己酮等酮系溶劑,甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮等醯胺系溶劑,乙腈、丙腈等腈系溶劑,乙酸甲酯、乙酸乙酯等酯系溶劑,碳酸二甲酯、碳酸二乙酯等碳酸酯系溶劑,除此以外,可列舉醚系溶劑、二醇系溶劑、胺系溶劑、硫醇系溶劑、鹵素系溶劑等。 The solvent that can be used is not particularly limited, and examples thereof include alcohol solvents such as water, methanol, ethanol, propanol, ethylene glycol, 1-methoxy-2-propanol, glycerol, and propylene glycol monomethyl ether, and acids such as acetic acid. , Ketone solvents such as acetone, methyl ethyl ketone, cyclohexanone, fluorene solvents such as formamidine, dimethylacetamide, N-methylpyrrolidone, nitrile solvents such as acetonitrile, propionitrile, In addition to ester solvents such as methyl acetate and ethyl acetate, and carbonate solvents such as dimethyl carbonate and diethyl carbonate, examples include ether solvents, glycol solvents, amine solvents, and thiol solvents. , Halogen-based solvents, etc.

其中,較佳為醇系溶劑、醯胺系溶劑、酮系溶劑、腈系溶劑、碳酸酯系溶劑。 Among these, alcohol-based solvents, amidine-based solvents, ketone-based solvents, nitrile-based solvents, and carbonate-based solvents are preferred.

被鍍敷層形成用組成物中的溶劑的含量並無特別限制,但相對於組成物總量,較佳為50質量%~98質量%,更佳為70質量%~95質量%。若為上述範圍內,則組成物的處理性優異,容易進行被鍍敷層的層厚的控制等。 The content of the solvent in the plating layer-forming composition is not particularly limited, but it is preferably 50% to 98% by mass, and more preferably 70% to 95% by mass with respect to the total amount of the composition. If it is in the said range, the handleability of a composition will be excellent and it will be easy to control the layer thickness of a to-be-plated layer, etc.

視需要,亦可向被鍍敷層形成用組成物中添加聚合起始劑(熱聚合起始劑、光聚合起始劑)。 If necessary, a polymerization initiator (thermal polymerization initiator, photopolymerization initiator) may be added to the composition for forming a plated layer.

(被鍍敷層的形成程序) (Formation procedure of plated layer)

使用上述被鍍敷層形成用組成物於底層16上形成含有聚合物的層的方法並無特別限制,可列舉利用公知的方法(例如旋塗、模塗、浸塗等)將該被鍍敷層形成層組成物塗佈於底層16上的方法等。 The method for forming a polymer-containing layer using the composition for forming a plated layer on the underlayer 16 is not particularly limited, and examples thereof include a known method (for example, spin coating, die coating, dip coating, etc.) A method for applying the layer-forming layer composition to the underlayer 16 and the like.

就處理性或製造效率的觀點而言,較佳為將被鍍敷層形成用組成物塗佈於底層16上並使其乾燥,然後將殘存的溶劑去除,而形成含有聚合物的層的形態。 From the viewpoint of handleability and manufacturing efficiency, it is preferable that the composition for forming a plated layer is applied to the underlayer 16 and dried, and then the remaining solvent is removed to form a polymer-containing layer. .

就與鍍敷觸媒或其前驅物形成充分的相互作用的觀點而言,被鍍敷層形成用組成物的塗佈量以固體成分換算計較佳為0.1 g/m2~10 g/m2,特佳為0.5 g/m2~5 g/m2From the viewpoint of forming a sufficient interaction with the plating catalyst or its precursor, the coating amount of the composition for forming a plated layer is preferably 0.1 g / m 2 to 10 g / m 2 in terms of solid content. Especially preferred is 0.5 g / m 2 to 5 g / m 2 .

對底層16上的含有聚合物的層賦予能量的方法並無特別限制,但較佳為例如加熱處理或曝光處理,就處理於短時間內結束的觀點而言,較佳為曝光處理。 The method of applying energy to the polymer-containing layer on the underlayer 16 is not particularly limited, but is preferably, for example, a heat treatment or an exposure treatment, and is preferably an exposure treatment from the viewpoint that the treatment is completed in a short time.

於曝光處理中,可使用利用紫外線(Ultraviolet,UV)燈、可見光線等的光照射等。作為光源,例如有水銀燈、金屬鹵化物燈、氙燈、化學燈、碳弧燈等。作為放射線,亦有電子束、X射線、離子束、遠紅外線等。 In the exposure processing, light irradiation using an ultraviolet (UV) lamp, visible light, or the like can be used. Examples of the light source include a mercury lamp, a metal halide lamp, a xenon lamp, a chemical lamp, and a carbon arc lamp. Examples of radiation include electron beams, X-rays, ion beams, and far-infrared rays.

作為曝光時間,根據聚合物的反應性及光源而不同,但通常為10秒~5小時之間。作為曝光能量,只要是10 mJ~8000 mJ左右即可,較佳為100 mJ~7000 mJ的範圍。 The exposure time varies depending on the reactivity of the polymer and the light source, but it is usually between 10 seconds and 5 hours. The exposure energy may be about 10 mJ to 8000 mJ, and a range of 100 mJ to 7000 mJ is preferable.

再者,當利用加熱處理來賦予能量時,可使用鼓風乾燥機、烘箱、紅外線乾燥機、加熱滾筒等。 When the heat treatment is used to impart energy, a blow dryer, an oven, an infrared dryer, a heating drum, or the like can be used.

<孔形成步驟> <Hole formation step>

其次,對針對上述加工前積層體所實施的孔形成處理的程序進行詳述。 Next, the procedure of the hole formation process performed with respect to the said laminated body before a process is explained in full detail.

孔形成步驟是對上述加工前積層體實施雷射加工,而形成自加工前積層體的被鍍敷層18側的表面到達第1金屬層14表面的孔的步驟。更具體而言,如圖1之(B)所示,自加工前積層體10的被鍍敷層18側進行雷射照射,將底層16及被鍍敷層18貫穿,而形成到達第1金屬層14表面上的孔22,藉此製造附孔積層體20。 The hole forming step is a step of performing laser processing on the pre-processed laminated body to form holes from the surface of the plated layer 18 side of the pre-processed laminated body to the surface of the first metal layer 14. More specifically, as shown in FIG. 1 (B), laser irradiation is performed from the plated layer 18 side of the multilayer body 10 before processing, and the bottom layer 16 and the plated layer 18 are penetrated to form the first metal. The holes 22 on the surface of the layer 14, thereby manufacturing the laminated body 20 with holes.

以下,首先對雷射加工進行詳述。 Hereinafter, first, laser processing will be described in detail.

雷射加工中所使用的雷射只要是將底層16及被鍍敷層18去除、且可形成所期望的直徑的孔(通道)的雷射,則並無特別限制。 The laser used in the laser processing is not particularly limited as long as it is a laser that removes the bottom layer 16 and the plated layer 18 and can form a hole (channel) of a desired diameter.

其中,就加工性優異的觀點,即可高效地將各層剝蝕(ablation),且生產性優異這一觀點而言,較佳為二氧化碳雷射(CO2雷射)、UV-釔鋁石榴石(Yttrium Aluminium Garnet,YAG)雷射、準分子雷射等。 Among them, from the viewpoint of excellent processability, that is, the layers can be efficiently ablated, and from the viewpoint of excellent productivity, carbon dioxide laser (CO 2 laser) and UV-yttrium aluminum garnet ( Yttrium Aluminium Garnet (YAG) laser, excimer laser, etc.

再者,雷射可連續地照射、或斷續地照射,亦能夠以單脈衝斷續地照射。 Furthermore, the laser can be continuously irradiated or intermittently irradiated, and can also be intermittently irradiated with a single pulse.

單脈衝照射中的照射次數(照射數(shot number))通常為1次~500次,較佳為1次~100次。脈衝週期通常為1 kHz~8 kHz,較佳為1 kHz~5 kHz。 The number of shots (shot number) in a single pulse irradiation is usually 1 to 500 times, preferably 1 to 100 times. The pulse period is usually 1 kHz ~ 8 kHz, preferably 1 kHz ~ 5 kHz.

本步驟中所形成的孔22的直徑是根據使用目的而適宜選擇最佳的直徑的大小,就形成高密度多層基板的觀點而言,較佳為頂徑(φ)為20 μm~150 μm,底徑(φ)為20 μm~120 μm,就配線的微細化或積體化的觀點而言,更佳為頂徑(φ)為20 μm~60 μm,底徑(φ)為20 μm~50 μm。 The diameter of the hole 22 formed in this step is appropriately selected according to the purpose of use. From the viewpoint of forming a high-density multilayer substrate, the top diameter (φ) is preferably 20 μm to 150 μm. The bottom diameter (φ) is 20 μm to 120 μm. From the viewpoint of miniaturization or integration of wiring, the top diameter (φ) is preferably 20 μm to 60 μm, and the bottom diameter (φ) is 20 μm to 50 μm.

藉由上述方法所製造的附孔積層體20中的孔22的形狀精度非常優異,作為結果,以填充該孔22的方式配置於被鍍敷層18上的第2金屬層26與第1金屬層14的電性連接性優異。 The shape accuracy of the holes 22 in the laminated body 20 with holes manufactured by the above method is extremely excellent. As a result, the second metal layer 26 and the first metal are disposed on the plated layer 18 so as to fill the holes 22. The layer 14 is excellent in electrical connectivity.

即,附孔積層體20作為用以製造具有多層的金屬層的多層基板的多層基板形成用基板有用。以下,對使用該附孔積層體20的多層基板的製造方法的第1實施形態進行詳述。 That is, the laminated body with holes 20 is useful as a substrate for forming a multilayer substrate for producing a multilayer substrate having a plurality of metal layers. Hereinafter, a first embodiment of a method for manufacturing a multilayer substrate using the laminated body 20 with holes will be described in detail.

<多層基板及其製造方法> <Multilayer substrate and manufacturing method thereof>

使用上述附孔積層體20的多層基板的製造方法並無特別限制,但作為適宜的實施形態,可列舉具有如下步驟的方法:進行除膠渣處理的除膠渣(desmear)步驟、對被鍍敷層賦予鍍敷觸媒(或前驅物)的觸媒賦予步驟、進行鍍敷處理的鍍敷步驟、及使金屬層變成圖案狀的圖案形成步驟。 The manufacturing method of the multilayer substrate using the laminated body with holes 20 is not particularly limited, but as a suitable embodiment, a method having the following steps: a desmear step of performing a desmear treatment, and A catalyst applying step of applying a cladding layer with a plating catalyst (or a precursor), a plating step of performing a plating treatment, and a pattern forming step of changing the metal layer into a pattern.

以下,對各步驟的程序進行詳述。 The procedure of each step is described in detail below.

[除膠渣步驟] [Steps for removing glue residue]

除膠渣步驟是視需要而設置的步驟,其是進行將附孔積層體20中的孔22中所殘存的膠渣(殘渣)去除的除膠渣處理的步驟。 The dross removing step is a step provided as necessary, and is a step of performing a dross removing process that removes the dross (residue) remaining in the holes 22 in the pore-attached laminate 20.

當利用雷射加工將底層16及被鍍敷層18部分地去除時,存在構成各層的材料熔融或分解時的熔融物或分解物附著於孔22的側面或底部的情況。另外,為了不對存在於孔22底部的第1金屬層14直接造成影響而調整雷射加工,由此有時於孔22的底部殘存一部分的底層16。藉由設置本步驟來將此種殘渣去除,藉此通道的連接可靠性進一步提昇。 When the bottom layer 16 and the plated layer 18 are partially removed by laser processing, there is a case where the molten material or the decomposed material when the material constituting each layer is melted or decomposed adheres to the side or bottom of the hole 22. In addition, in order to adjust the laser processing so as not to directly affect the first metal layer 14 existing at the bottom of the hole 22, a part of the bottom layer 16 may remain at the bottom of the hole 22. By setting this step to remove such residues, the connection reliability of the channel is further improved.

再者,當殘存於孔22的側面或底部的膠渣少時,亦可不實施該步驟。 In addition, when there is little glue residue on the side or bottom of the hole 22, this step may not be performed.

[觸媒賦予步驟] [Catalyst provision step]

觸媒賦予步驟是於上述除膠渣步驟後,對上述附孔積層體20中的被鍍敷層18賦予鍍敷觸媒或其前驅物的步驟。 The catalyst applying step is a step of applying a plating catalyst or a precursor thereof to the plated layer 18 in the hole-attached layered body 20 after the slag removing step.

於本步驟中,被鍍敷層18中的相互作用性基附著(吸附)對應於其功能而賦予的鍍敷觸媒或其前驅物。所吸附的鍍敷觸媒或其前驅物於後述的鍍敷步驟中作為鍍敷核而發揮作用。再者,當實施該步驟時,亦可對孔22內部的壁面上所露出的底層16賦予鍍敷觸媒或其前驅物。 In this step, the interactive group in the plated layer 18 is adhered (adsorbed) to the plating catalyst or its precursor provided in accordance with its function. The adsorbed plating catalyst or its precursor functions as a plating core in a plating step described later. Furthermore, when this step is performed, a plating catalyst or a precursor thereof may be applied to the bottom layer 16 exposed on the wall surface inside the hole 22.

首先,對本步驟中所使用的材料(鍍敷觸媒或其前驅物等)進行詳述,其後對該步驟的程序進行詳述。 First, the materials (plating catalyst or its precursor, etc.) used in this step will be described in detail, and then the procedure of this step will be described in detail.

(鍍敷觸媒) (Plating catalyst)

鍍敷觸媒或其前驅物是作為後述的鍍敷步驟中的鍍敷的觸媒或電極而發揮功能者。因此,所使用的鍍敷觸媒或其前驅物的種類是根據鍍敷的種類而適宜決定。 The plating catalyst or a precursor thereof functions as a plating catalyst or an electrode in a plating step described later. Therefore, the type of the plating catalyst or its precursor to be used is appropriately determined according to the type of plating.

再者,就金屬層的密接性更優異的觀點而言,本步驟中所使用的鍍敷觸媒或其前驅物較佳為無電解鍍敷觸媒或其前驅物。其中,就還原電位的觀點而言,鍍敷觸媒或其前驅物較佳為含有Pd、Ag、或Cu的化合物。 Furthermore, from the viewpoint that the adhesion of the metal layer is more excellent, the plating catalyst or its precursor used in this step is preferably an electroless plating catalyst or its precursor. Among these, from the viewpoint of reduction potential, the plating catalyst or its precursor is preferably a compound containing Pd, Ag, or Cu.

以下,主要對無電解鍍敷或其前驅物進行詳述。 Hereinafter, the electroless plating or its precursors will be mainly described in detail.

作為無電解鍍敷觸媒,只要是成為無電解鍍敷時的活性核者,則可使用任何無電解鍍敷觸媒,具體而言,可列舉具有自催化還原反應(autocatalytic reduction reaction)的催化活性(catalytic activity)的金屬(例如,作為離子化傾向比Ni低的可進行無電解鍍敷的金屬而為人所知者)等。更具體而言,可列舉:Pd、Ag、Cu、Ni、Al、Fe、Co等。其中,就催化活性的高低而言,特佳為Ag、Pd。 As the electroless plating catalyst, any electroless plating catalyst can be used as long as it becomes an active nucleus at the time of electroless plating. Specifically, a catalyst having an autocatalytic reduction reaction can be mentioned. A catalytic activity metal (for example, a metal known as an electroless-platable metal having a lower ionization tendency than Ni) and the like. More specific examples include Pd, Ag, Cu, Ni, Al, Fe, and Co. Among them, Ag and Pd are particularly preferred in terms of the level of catalytic activity.

作為無電解鍍敷觸媒,亦可使用金屬膠體(金屬粒子)。通常,金屬膠體可藉由於存在具有電荷的界面活性劑或具有電荷的保護劑的溶液中,將金屬離子還原來製作。 As the electroless plating catalyst, a metal colloid (metal particle) may be used. Generally, metal colloids can be produced by reducing metal ions due to the presence of a charged surfactant or a charged protective agent.

作為無電解鍍敷觸媒前驅物,只要是可藉由化學反應而變成無電解鍍敷觸媒者,則可無特別限制地使用。主要可使用上述作為無電解鍍敷觸媒所列舉的金屬的金屬離子。作為無電解鍍敷觸媒前驅物的金屬離子藉由還原反應而變成作為無電解鍍敷觸媒的零價金屬。作為無電解鍍敷 觸媒前驅物的金屬離子亦可於賦予至被鍍敷層18中之後、浸漬於無電解鍍敷液中之前,另行藉由還原反應而變成零價金屬來作為無電解鍍敷觸媒。另外,亦能夠以無電解鍍敷觸媒前驅物的狀態浸漬於無電解鍍敷液中,並藉由無電解鍍敷液中的還原劑而變成金屬(無電解鍍敷觸媒)。 As the electroless plating catalyst precursor, any one that can be turned into an electroless plating catalyst by a chemical reaction can be used without particular limitation. The metal ions mentioned above as the electroless plating catalyst can be mainly used. Metal ions, which are precursors of electroless plating catalysts, become zero-valent metals, which are electroless plating catalysts, by reduction reactions. As electroless plating The metal ions of the catalyst precursor may be used as an electroless plating catalyst by reducing the reaction to become a zero-valent metal after the metal ions are applied to the plated layer 18 and before being immersed in the electroless plating solution. In addition, it can be immersed in an electroless plating solution in the state of an electroless plating catalyst precursor, and can be converted into a metal (electroless plating catalyst) by a reducing agent in the electroless plating solution.

作為無電解鍍敷觸媒前驅物的金屬離子較佳為使用金屬鹽來賦予至被鍍敷層18。作為所使用的金屬鹽,只要是溶解於適當的溶劑中而解離成金屬離子與鹼(陰離子)者,則並無特別限制,可列舉M(NO3)n、MCln、M2/n(SO4)、M3/n(PO4)(M表示n價的金屬原子)等。作為金屬離子,可適宜使用上述金屬鹽解離而成者。作為具體例,可列舉Ag離子、Cu離子、Al離子、Ni離子、Co離子、Fe離子、Pd離子,其中,較佳為可進行多齒配位的金屬離子,尤其,就可進行配位的官能基的種類數及催化活性的觀點而言,較佳為Ag離子、Pd離子。 The metal ions that are precursors of the electroless plating catalyst are preferably imparted to the plated layer 18 using a metal salt. The metal salt used is not particularly limited as long as it is dissolved in a suitable solvent to dissociate into metal ions and bases (anions), and examples thereof include M (NO 3 ) n , MCl n , and M 2 / n ( SO 4 ), M 3 / n (PO 4 ) (M represents an n-valent metal atom), and the like. As the metal ion, one obtained by dissociating the above-mentioned metal salt can be suitably used. Specific examples include Ag ions, Cu ions, Al ions, Ni ions, Co ions, Fe ions, and Pd ions. Among them, metal ions capable of multidentate coordination are preferred, and especially those capable of coordination From the viewpoint of the number of types of functional groups and catalytic activity, Ag ions and Pd ions are preferred.

於本步驟中,作為用於不進行無電解鍍敷而直接進行電鍍的觸媒,亦可使用上述以外的零價金屬。 In this step, as a catalyst for directly performing electroplating without performing electroless plating, a zero-valent metal other than the above may be used.

上述鍍敷觸媒或其前驅物較佳為以含有這些鍍敷觸媒或其前驅物的鍍敷觸媒液(分散或溶解於溶劑中而成的分散液或溶液)的形態來使用。 The plating catalyst or its precursor is preferably used in the form of a plating catalyst liquid (a dispersion or a solution obtained by dispersing or dissolving in a solvent) containing the plating catalyst or its precursor.

鍍敷觸媒液通常含有溶劑,作為溶劑的種類,可使用有機溶劑及/或水。通常,將水用作主成分。藉由鍍敷觸媒液含有有機溶劑,鍍敷觸媒液對於被鍍敷層18的滲透性提昇,可使鍍敷觸媒或其前驅物高效地吸附於相互作用性基。 The plating catalyst liquid usually contains a solvent. As the type of the solvent, an organic solvent and / or water can be used. Generally, water is used as a main component. Since the plating catalyst liquid contains an organic solvent, the permeability of the plating catalyst liquid to the plated layer 18 is improved, and the plating catalyst or its precursor can be efficiently adsorbed to the interaction group.

作為鍍敷觸媒液中所使用的有機溶劑,只要是可滲透至被鍍敷層18中的溶劑,則並無特別限制,具體而言,可使用丙酮、乙醯乙酸甲酯、乙醯乙酸乙酯、乙二醇二乙酸酯、環己酮、乙醯丙酮、苯乙酮、2-(1-環己烯基)環己酮、丙二醇二乙酸酯、三乙酸甘油酯、二乙二醇二乙酸酯、二乙二醇二乙醚、二乙二醇單甲醚、二噁烷、N-甲基吡咯啶酮、碳酸二甲酯、二甲基溶纖劑、1-甲氧基-2-丙醇等。 The organic solvent used in the plating catalyst liquid is not particularly limited as long as it is a solvent that can penetrate into the plated layer 18. Specifically, acetone, methyl ethyl acetate, and ethyl acetate can be used. Ethyl acetate, ethylene glycol diacetate, cyclohexanone, acetoacetone, acetophenone, 2- (1-cyclohexenyl) cyclohexanone, propylene glycol diacetate, glyceryl triacetate, diethyl Diethylene glycol diacetate, diethylene glycol diethyl ether, diethylene glycol monomethyl ether, dioxane, N-methylpyrrolidone, dimethyl carbonate, dimethyl cellosolve, 1-methoxy 2-propanol and the like.

(觸媒賦予步驟的程序) (Procedure of catalyst provision step)

將鍍敷觸媒或其前驅物賦予至被鍍敷層18上的方法並無特別限制。 A method of applying a plating catalyst or a precursor thereof to the plated layer 18 is not particularly limited.

例如可列舉:製備上述鍍敷觸媒液(使金屬分散於適當的分散媒中而成的分散液,或包含使金屬鹽於適當的溶劑中溶解、解離而成的金屬離子的溶液),然後將鍍敷觸媒液塗佈於被鍍敷層18上的方法;或使形成有被鍍敷層18的附孔積層體20浸漬於鍍敷觸媒液中的方法等使鍍敷觸媒液與被鍍敷層18接觸的方法。 For example, the above-mentioned plating catalyst liquid (a dispersion liquid in which a metal is dispersed in an appropriate dispersion medium or a solution containing metal ions obtained by dissolving and dissociating a metal salt in an appropriate solvent) can be mentioned, and A method of applying a plating catalyst liquid to the plated layer 18; or a method of immersing the porous layered body 20 on which the plated layer 18 is formed in a plating catalyst liquid, etc. Method for contacting the plated layer 18.

被鍍敷層18與鍍敷觸媒液的接觸時間較佳為30秒~10分鐘左右,更佳為3分鐘~5分鐘左右。 The contact time between the plated layer 18 and the plating catalyst liquid is preferably about 30 seconds to 10 minutes, and more preferably about 3 minutes to 5 minutes.

接觸時的鍍敷觸媒液的溫度較佳為20℃~60℃左右,就溫度保持的觀點而言,更佳為30℃~60℃左右。 The temperature of the plating catalyst liquid at the time of contact is preferably about 20 ° C to 60 ° C, and more preferably about 30 ° C to 60 ° C from the viewpoint of temperature maintenance.

[鍍敷步驟] [Plating step]

鍍敷步驟是對藉由上述觸媒賦予步驟而賦予有鍍敷觸媒或其前驅物的被鍍敷層進行鍍敷處理,將經由孔而與第1金屬層接觸並導通的第2金屬層形成於被鍍敷層上的步 驟。更具體而言,藉由實施本步驟,如圖1之(C)所示,以填充孔22的方式於被鍍敷層18上設置第2金屬層26,而可獲得具有第1金屬層14與第2金屬層26的多層基板24。第2金屬層26通過孔22而與第1金屬層14接觸,並進行電性連接。 The plating step is a plating process for the plated layer to which the plating catalyst or a precursor thereof is applied by the above-mentioned catalyst applying step, and the second metal layer that is in contact with and is in contact with the first metal layer through a hole. Step formed on the plated layer Step. More specifically, by implementing this step, as shown in FIG. 1 (C), a second metal layer 26 is provided on the plated layer 18 so as to fill the hole 22, and the first metal layer 14 can be obtained. A multilayer substrate 24 with a second metal layer 26. The second metal layer 26 is in contact with the first metal layer 14 through the hole 22 and is electrically connected.

本步驟中所進行的鍍敷處理的種類可列舉無電解鍍敷、電解鍍敷等,於上述步驟中,可根據被賦予至被鍍敷層18上的鍍敷觸媒或其前驅物的功能而進行選擇。 The types of plating treatment performed in this step include electroless plating and electrolytic plating. In the above steps, the functions of the plating catalyst or its precursor provided on the plated layer 18 can be used. Make a selection.

其中,就所形成的第2金屬層26的密接性更優異的觀點而言,較佳為進行無電解鍍敷。另外,為了獲得所期望的層厚的第2金屬層26,更佳的形態是於無電解鍍敷後,進而進行電解鍍敷。 Among these, from the viewpoint that the adhesion of the formed second metal layer 26 is more excellent, electroless plating is preferably performed. In addition, in order to obtain the second metal layer 26 having a desired layer thickness, a more preferable form is electrolytic plating after electroless plating.

以下,對可於本步驟中適宜地進行的鍍敷進行說明。 Hereinafter, the plating which can be suitably performed in this step is demonstrated.

(無電解鍍敷) (Electroless plating)

所謂無電解鍍敷,是指使用溶解有欲作為鍍層而析出的金屬離子的溶液,藉由化學反應來使金屬析出的操作。 The electroless plating refers to an operation in which a metal is precipitated by a chemical reaction using a solution in which metal ions to be deposited as a plating layer are dissolved.

本步驟中的無電解鍍敷如下般進行:例如對賦予有無電解鍍敷觸媒的附孔積層體20進行水洗而將多餘的無電解鍍敷觸媒(金屬)去除,然後浸漬於無電解鍍浴中。作為所使用的無電解鍍浴,可使用公知的無電解鍍浴。再者,就獲得的容易性的觀點而言,無電解鍍浴較佳為使用鹼性的無電解鍍浴(pH較佳為9~14左右)的情況。 The electroless plating in this step is performed as follows. For example, the porous laminated body 20 provided with the electroless plating catalyst is washed with water to remove excess electroless plating catalyst (metal), and then immersed in the electroless plating. In the bath. As the electroless plating bath used, a known electroless plating bath can be used. Furthermore, from the viewpoint of easiness of obtaining, it is preferable that the electroless plating bath is a case where an alkaline electroless plating bath (pH is preferably about 9 to 14) is used.

另外,當於無電解鍍敷觸媒前驅物吸附或含浸於被鍍敷層18中的狀態下,使賦予有無電解鍍敷觸媒前驅物的附 孔積層體20浸漬於無電解鍍浴中時,較佳為對附孔積層體20進行水洗而將多餘的前驅物(金屬鹽等)去除後,浸漬於無電解鍍浴中。於此情況下,在無電解鍍浴中,進行鍍敷觸媒前驅物的還原與緊隨其後的無電解鍍敷。作為此處所使用的無電解鍍浴,與上述相同,亦可使用公知的無電解鍍浴。 In addition, in a state in which the electroless plating catalyst precursor is adsorbed or impregnated in the to-be-plated layer 18, the adhesion to the electroless plating catalyst precursor is provided. When the porous layered body 20 is immersed in an electroless plating bath, it is preferred that the porous layered body 20 be washed with water to remove excess precursors (metal salts, etc.), and then immersed in the electrolytic plating bath. In this case, in the electroless plating bath, the reduction of the plating catalyst precursor and the electroless plating immediately following it are performed. As the electroless plating bath used here, a known electroless plating bath can be used in the same manner as described above.

再者,亦可與如上所述的使用無電解鍍敷液的形態不同,準備觸媒活化液(還原液),進行無電解鍍敷觸媒前驅物的還原作為無電解鍍敷前的其他步驟。觸媒活化液是溶解有可將無電解鍍敷觸媒前驅物(主要為金屬離子)還原成零價金屬的還原劑的溶液,相對於整個溶液的該還原劑的濃度較佳為0.1質量%~50質量%,更佳為1質量%~30質量%。作為還原劑,可使用公知的還原劑(例如硼氫化鈉或二甲胺硼烷等硼系還原劑、甲醛、次亞磷酸等)。 Furthermore, it is also possible to prepare a catalyst activating liquid (reducing liquid) different from the form using the electroless plating solution as described above, and perform the reduction of the electroless plating catalyst precursor as another step before the electroless plating. . The catalyst activating solution is a solution in which a reducing agent capable of reducing the electroless plating catalyst precursor (mainly metal ions) to a zero-valent metal is dissolved. The concentration of the reducing agent relative to the entire solution is preferably 0.1% by mass. ~ 50 mass%, more preferably 1 mass% to 30 mass%. As the reducing agent, a known reducing agent (for example, a boron-based reducing agent such as sodium borohydride or dimethylamine borane, formaldehyde, hypophosphite, etc.) can be used.

於浸漬時,較佳為在將無電解鍍敷觸媒或其前驅物所接觸的被鍍敷層18表面附近的無電解鍍敷觸媒或其前驅物的濃度保持為固定後,一面施加攪拌或擺動一面進行浸漬。 At the time of dipping, it is preferable to keep the concentration of the electroless plating catalyst or its precursor near the surface of the plated layer 18 in contact with the electroless plating catalyst or its precursor fixed, and then apply agitation. Or oscillate while dipping.

作為一般的無電解鍍浴的組成,例如除了溶劑(例如,水)以外,主要包含1.鍍敷用的金屬離子、2.還原劑、3.提昇金屬離子的穩定性的添加劑(穩定劑)。 As a composition of a general electroless plating bath, for example, in addition to a solvent (for example, water), it mainly contains 1. metal ions for plating, 2. reducing agents, and 3. additives (stabilizers) for improving the stability of metal ions. .

作為鍍浴中所使用的有機溶劑,必須是可溶於水的溶劑,就該觀點而言,可較佳地使用丙酮等酮類,甲醇、乙醇、異丙醇等醇類。 The organic solvent used in the plating bath must be a water-soluble solvent. From this viewpoint, ketones such as acetone and alcohols such as methanol, ethanol, and isopropanol can be preferably used.

作為無電解鍍浴中所使用的金屬的種類,例如已知有銅、錫、鉛、鎳、金、銀、鈀、銠,其中,就導電性的觀點而言,特佳為銅、金。另外,配合上述金屬而選擇最佳的還原劑、添加物。 As the kind of metal used in the electroless plating bath, for example, copper, tin, lead, nickel, gold, silver, palladium, and rhodium are known. Among them, copper and gold are particularly preferred from the viewpoint of conductivity. In addition, the above-mentioned metal is blended to select an optimal reducing agent and additive.

藉由無電解鍍敷所獲得的第2金屬層26的層厚可藉由鍍浴的金屬離子濃度、於鍍浴中的浸漬時間、或鍍浴的溫度等來控制,但就導電性的觀點而言,較佳為0.1 μm以上,更佳為0.2 μm~2 μm。 The thickness of the second metal layer 26 obtained by electroless plating can be controlled by the metal ion concentration of the plating bath, the immersion time in the plating bath, or the temperature of the plating bath, but from the viewpoint of conductivity In particular, it is preferably 0.1 μm or more, and more preferably 0.2 μm to 2 μm.

但是,當將由無電解鍍敷所形成的第2金屬層26作為導通層,進行後述的電解鍍敷時,較佳為均勻地賦予有至少0.1 μm以上的層。 However, when the second metal layer 26 formed by electroless plating is used as a conductive layer and the electrolytic plating described later is performed, it is preferable to uniformly provide a layer of at least 0.1 μm or more.

另外,作為於鍍浴中的浸漬時間,較佳為1分鐘~6小時左右,更佳為1分鐘~3小時左右。 The immersion time in the plating bath is preferably about 1 minute to 6 hours, and more preferably about 1 minute to 3 hours.

(電解鍍敷(電鍍)) (Electrolytic plating (plating))

本步驟中,當於上述步驟中所賦予的鍍敷觸媒或其前驅物具有作為電極的功能時,可對賦予有該觸媒或其前驅物的被鍍敷層18進行電解鍍敷。 In this step, when the plating catalyst or its precursor provided in the above step has a function as an electrode, electrolytic plating may be performed on the plated layer 18 provided with the catalyst or its precursor.

另外,亦可於上述無電解鍍敷後,將所形成的金屬層作為電極,進而進行電解鍍敷。藉此,能夠以與附孔積層體20的密接性優異的無電解鍍敷膜為基底,而容易地於其上新形成具有任意的厚度的第2金屬層26。如此,藉由於無電解鍍敷後進行電解鍍敷,可將金屬層形成為對應於目的之厚度,因此適合於將第2金屬層26應用於各種用途。 In addition, after the above-mentioned electroless plating, the formed metal layer may be used as an electrode, and further electrolytic plating may be performed. This makes it possible to easily newly form the second metal layer 26 having an arbitrary thickness on the basis of the electroless plated film having excellent adhesion to the laminated body 20 with holes. As described above, since the metal layer can be formed to a thickness corresponding to the purpose by performing electrolytic plating after electroless plating, the second metal layer 26 is suitable for various applications.

作為電解鍍敷的方法,可使用先前公知的方法。再者, 作為電解鍍敷中所使用的金屬,可列舉銅、鉻、鉛、鎳、金、銀、錫、鋅等,就導電性的觀點而言,較佳為銅、金、銀,更佳為銅。 As a method of electrolytic plating, a conventionally known method can be used. Furthermore, Examples of the metal used in electrolytic plating include copper, chromium, lead, nickel, gold, silver, tin, and zinc. From the viewpoint of conductivity, copper, gold, and silver are preferred, and copper is more preferred. .

另外,藉由電解鍍敷所獲得的第2金屬層26的層厚可藉由調整鍍浴中所含有的金屬濃度、或電流密度等來控制。 The thickness of the second metal layer 26 obtained by electrolytic plating can be controlled by adjusting the concentration of the metal contained in the plating bath, the current density, and the like.

再者,當應用於一般的電氣配線等時,就導電性的觀點而言,第2金屬層26的層厚較佳為0.5 μm以上,更佳為1 μm~30 μm。 When applied to general electric wiring and the like, the layer thickness of the second metal layer 26 is preferably 0.5 μm or more, and more preferably 1 μm to 30 μm from the viewpoint of conductivity.

[圖案形成步,驟] [Pattern forming step, step]

圖案形成步驟是視需要而設置的步驟,其是將藉由鍍敷步驟所獲得的第2金屬層蝕刻成圖案狀,而形成圖案狀金屬層的步驟。 The pattern forming step is a step provided as necessary, and is a step of etching the second metal layer obtained by the plating step into a pattern shape to form a pattern metal layer.

更具體而言,如圖1之(D)所示,於本步驟中,將第2金屬層26的不需要的部分去除,藉此於被鍍敷層18上形成圖案狀的金屬層28。於本步驟中,藉由蝕刻來將形成於基板12的整個表面的金屬層26的不需要的部分去除,藉此可形成所期望的圖案狀的金屬層28。 More specifically, as shown in FIG. 1 (D), in this step, an unnecessary portion of the second metal layer 26 is removed, thereby forming a patterned metal layer 28 on the plated layer 18. In this step, an unnecessary portion of the metal layer 26 formed on the entire surface of the substrate 12 is removed by etching, whereby a metal layer 28 having a desired pattern can be formed.

該圖案的形成可使用任何方法,具體而言,通常使用已知的減成法(於金屬層上設置圖案狀的遮罩,對未形成遮罩的區域進行蝕刻處理後,將遮罩去除,而形成圖案狀的金屬層的方法)、半加成法(於金屬層上設置圖案狀的遮罩,以於未形成遮罩的區域中形成金屬層的方式進行鍍敷處理,然後將遮罩去除並進行蝕刻處理,而形成圖案狀的金屬層的方法)。 The pattern can be formed by any method. Specifically, a known subtractive method is generally used (a patterned mask is provided on the metal layer, and the mask is removed after etching the area where the mask is not formed. And a method for forming a patterned metal layer), a semi-additive method (a patterned mask is provided on the metal layer, and a metal layer is formed in a region where the mask is not formed, and then the mask is processed. A method of removing and performing an etching process to form a patterned metal layer).

所謂減成法,是指如下的方法:於所形成的第2金屬層26上設置抗蝕劑層,藉由圖案曝光、顯影而形成與金屬層圖案部相同的圖案,然後將抗蝕劑圖案作為遮罩並利用蝕刻液去除第2金屬層26,而形成圖案狀的金屬層28。 The subtractive method refers to a method in which a resist layer is provided on the formed second metal layer 26, and the same pattern as the metal layer pattern portion is formed by pattern exposure and development, and then the resist pattern is formed. As a mask, the second metal layer 26 is removed by an etching solution to form a patterned metal layer 28.

作為抗蝕劑,可使用任何材料,可使用負型、正型、液狀、膜狀的抗蝕劑。另外,作為蝕刻方法,可使用印刷配線基板的製造時所使用的任何方法,可使用濕式蝕刻、乾式蝕刻等,只要任意地選擇即可。於作業的操作方面,就裝置等的簡便性的觀點而言較佳為濕式蝕刻。作為蝕刻液,例如可使用氯化銅、氯化鐵等的水溶液。 As the resist, any material can be used, and a negative, positive, liquid, or film resist can be used. In addition, as the etching method, any method used at the time of manufacturing a printed wiring board can be used, and wet etching, dry etching, and the like can be used as long as it is arbitrarily selected. From the viewpoint of the simplicity of the apparatus and the like in terms of operation of the work, wet etching is preferred. As the etching solution, for example, an aqueous solution such as copper chloride or ferric chloride can be used.

所謂半加成法,是指如下的方法:於所形成的第2金屬層26上設置抗蝕劑層,藉由圖案曝光、顯影而形成與非金屬層圖案部相同的圖案,然後將抗蝕劑圖案作為遮罩進行電解鍍敷,將抗蝕劑圖案去除後實施快速蝕刻,而將第2金屬層26去除成圖案狀,藉此形成圖案狀的金屬層28。 The semi-additive method is a method in which a resist layer is provided on the formed second metal layer 26, and the same pattern as that of the non-metal layer pattern portion is formed by pattern exposure and development, and then the resist is The agent pattern is used as a mask for electrolytic plating, and after the resist pattern is removed, a rapid etching is performed, and the second metal layer 26 is removed into a pattern, thereby forming a patterned metal layer 28.

抗蝕劑、蝕刻液等可使用與減成法相同的材料。另外,電解鍍敷方法可使用上述記載的方法。 The same materials as the subtractive method can be used for the resist and the etchant. As the electrolytic plating method, the method described above can be used.

再者,亦可於去除第2金屬層26的同時,利用公知的方法(例如,乾式蝕刻)等將被鍍敷層18一併去除。 In addition, the second metal layer 26 may be removed, and the plated layer 18 may be removed together by a known method (for example, dry etching) or the like.

藉由上述製造方法所獲得的多層基板可應用於可撓曲印刷電路(Flexible Printed Circuit,FPC)、薄膜覆晶(Chip On Film,COF)、捲帶自動接合(Tape Automated Bonding,TAB)、母板(mother board)、封裝中介層(package interposer)基板等各種用途。尤其可用於配線基板(例如, 印刷配線基板)等。再者,於本說明書中,所謂多層基板,是指具有2層以上的金屬層基板。藉由將金屬層(第1金屬層14及第2金屬層26)製成圖案狀配線,亦可獲得多層配線基板。 The multilayer substrate obtained by the above manufacturing method can be applied to Flexible Printed Circuit (FPC), Chip On Film (COF), Tape Automated Bonding (TAB), female Motherboard, package interposer substrate, and other applications. Particularly useful for wiring substrates (e.g., Printed wiring board). In addition, in this specification, a multilayer substrate means the metal layer substrate which has two or more layers. By patterning the metal layers (the first metal layer 14 and the second metal layer 26) into a patterned wiring, a multilayer wiring board can also be obtained.

另外,視需要亦可於第2金屬層26(或圖案狀的金屬層28)上進而設置絕緣層。作為絕緣層,可使用公知的材料,例如可列舉公知的層間絕緣膜、阻焊劑(solder resist)等。 If necessary, an insulating layer may be further provided on the second metal layer 26 (or the patterned metal layer 28). As the insulating layer, a known material can be used, and examples thereof include a known interlayer insulating film, a solder resist, and the like.

再者,亦可於第2金屬層26(或圖案狀的金屬層28)上進而設置上述底層16、及被鍍敷層18,而用作上述孔形成用的材料(加工前積層體)。 Further, the second metal layer 26 (or the patterned metal layer 28) may be further provided with the above-mentioned underlayer 16 and the plated layer 18, and used as a material for forming the hole (laminated body before processing).

<第2實施形態> <Second Embodiment>

如圖2之(A)所示,本實施形態的附孔積層體及多層配線的製造方法的第2實施形態與第1實施形態不同點在於:使用依次包括基板12、第1金屬層14、絕緣層30、底層16、及被鍍敷層18的加工前積層體100。 As shown in FIG. 2 (A), the second embodiment of the method for manufacturing a laminated body with holes and a multilayer wiring according to this embodiment differs from the first embodiment in that the substrate 12, the first metal layer 14, Pre-processed laminated body 100 of insulating layer 30, bottom layer 16, and plated layer 18.

以下,主要對加工前積層體100中的絕緣層30進行詳述,並一面參照圖2一面對本實施形態進行詳述。再者,圖2中,對與圖1所示的多層基板的各構成要素相同的構成要素標註相同的參照符號,並省略說明。 In the following, the insulating layer 30 in the laminated body 100 before processing is mainly described in detail, and this embodiment is described in detail with reference to FIG. 2. In addition, in FIG. 2, the same reference numerals are given to the same constituent elements as the respective constituent elements of the multilayer substrate shown in FIG. 1, and description thereof is omitted.

[絕緣層] [Insulation]

絕緣層30是為了確保第1金屬層14與第2金屬層26之間的絕緣可靠性而設置的層。 The insulating layer 30 is a layer provided to ensure insulation reliability between the first metal layer 14 and the second metal layer 26.

構成絕緣層30的材料並無特別限制,例如可列舉熱硬 化性樹脂或熱塑性樹脂等絕緣性樹脂。即,可列舉絕緣層30為絕緣樹脂層的形態。 The material constituting the insulating layer 30 is not particularly limited, and examples thereof include thermosetting Insulating resins such as chemical resins and thermoplastic resins. That is, the form in which the insulating layer 30 is an insulating resin layer is mentioned.

更具體而言,作為熱硬化性樹脂,例如可列舉:環氧樹脂、酚樹脂、聚醯亞胺樹脂、聚酯樹脂、雙馬來醯亞胺樹脂、聚烯烴樹脂、異氰酸酯樹脂等。作為熱塑性樹脂,例如可列舉:苯氧基樹脂、聚醚碸、聚碸、聚苯碸、聚苯硫醚、聚苯醚、聚醚醯亞胺等。 More specifically, examples of the thermosetting resin include epoxy resin, phenol resin, polyimide resin, polyester resin, bismaleimide resin, polyolefin resin, and isocyanate resin. Examples of the thermoplastic resin include phenoxy resin, polyether fluorene, polyfluorene, polyphenylene fluorene, polyphenylene sulfide, polyphenylene ether, polyether fluorene, and imine.

其中,就絕緣層30的絕緣特性、與無機填料的相容性、以及對於藥液的耐受性更優異的觀點而言,較佳為環氧樹脂。 Among these, epoxy resin is preferred from the viewpoints that the insulating properties of the insulating layer 30, compatibility with the inorganic filler, and resistance to a chemical solution are more excellent.

絕緣層30的厚度是根據積層體的使用目的而適宜選擇,但就保證第1金屬層14與第2金屬層26的絕緣性的觀點而言,較佳為10 μm~150 μm,更佳為20 μm~100 μm。 The thickness of the insulating layer 30 is appropriately selected according to the purpose of use of the laminate, but from the viewpoint of ensuring the insulation properties of the first metal layer 14 and the second metal layer 26, it is preferably 10 μm to 150 μm, and more preferably 20 μm ~ 100 μm.

於絕緣層30中亦可含有無機填料。無機填料通常用於絕緣層30的低熱膨脹係數(Coefficient of Thermal Expansion,CTE)化、高絕緣性化。藉由絕緣層30中含有無機填料,絕緣層30的膜強度提昇,作為結果,後述的第2金屬層28對於基板的密接性等提昇。 The insulating layer 30 may contain an inorganic filler. The inorganic filler is generally used to reduce the coefficient of thermal expansion (CTE) and increase the insulation of the insulating layer 30. When an inorganic filler is contained in the insulating layer 30, the film strength of the insulating layer 30 is improved, and as a result, the adhesion of the second metal layer 28 described later to the substrate is improved.

無機填料的種類並無特別限制,例如可列舉金屬化合物(例如金屬的氧化物、氮化物、硫化物、碳化物及這些的複合化物等),就絕緣層30的絕緣性及膜強度的觀點而言,較佳為金屬氧化物粒子(特別是SiO2)。 The type of the inorganic filler is not particularly limited, and examples thereof include metal compounds (for example, oxides, nitrides, sulfides, carbides, and composites thereof) of the metal. From the viewpoint of the insulation properties and film strength of the insulating layer 30, In other words, metal oxide particles (especially SiO 2 ) are preferred.

再者,作為無機填料的具體例,例如可列舉:二氧化矽、氧化鋁、黏土、滑石、氫氧化鋁、碳酸鈣等。 Specific examples of the inorganic filler include silicon dioxide, aluminum oxide, clay, talc, aluminum hydroxide, and calcium carbonate.

無機填料的形狀並無特別限制,可較佳地使用球狀、板狀、纖維狀、棒狀、不定形、中空等任一種形狀。 The shape of the inorganic filler is not particularly limited, and any shape such as a spherical shape, a plate shape, a fibrous shape, a rod shape, an irregular shape, and a hollow shape can be preferably used.

絕緣層30的形成方法並無特別限制。例如可列舉:將含有絕緣性樹脂的絕緣性樹脂組成物塗佈於基板12上,視需要進行加熱處理或曝光處理,而形成絕緣層30的方法(塗佈法);或將含有絕緣性樹脂的絕緣層30層壓於基板12上的方法等。 The method for forming the insulating layer 30 is not particularly limited. For example, a method (coating method) of applying an insulating resin composition containing an insulating resin to the substrate 12 and applying a heat treatment or an exposure treatment to form the insulating layer 30 as required; or an insulating resin A method of laminating the insulating layer 30 on the substrate 12 and the like.

如圖2之(B)所示,對加工前積層體100實施上述雷射加工,將絕緣層30、底層16及被鍍敷層18貫穿,而形成到達第1金屬層14表面上的孔22,藉此製造附孔積層體200。 As shown in FIG. 2 (B), the laser processing is performed on the pre-processed laminated body 100 to penetrate the insulating layer 30, the bottom layer 16 and the plated layer 18 to form a hole 22 reaching the surface of the first metal layer 14. Thus, the laminated body 200 with holes is manufactured.

其後,實施第1實施形態中所說明的程序,藉此可形成圖2之(C)所示的多層基板240,進而,如圖2之(D)所示,藉由上述蝕刻步驟而可製造圖案狀的金屬膜28。 Thereafter, by executing the procedure described in the first embodiment, the multilayer substrate 240 shown in FIG. 2 (C) can be formed, and as shown in FIG. 2 (D), the above-mentioned etching step can be used. A patterned metal film 28 is manufactured.

[實例] [Example]

以下,藉由實例來更詳細地說明本發明,但本發明並不限定於這些實例。 Hereinafter, the present invention will be described in more detail with examples, but the present invention is not limited to these examples.

以下,對本實例中所使用的聚合物的合成方法進行詳述。 Hereinafter, a method for synthesizing the polymer used in this example will be described in detail.

(合成例1:聚合物1) (Synthesis Example 1: Polymer 1)

向2L的三口燒瓶中添加乙酸乙酯1L、2-胺基乙醇159 g,並利用冰浴進行冷卻。以使內溫變成20℃以下的方式進行調節並向其中滴加溴化2-溴異丁酸150 g。其後,使內溫上昇至室溫(25℃)為止並反應2小時。反應結束 後,追加蒸餾水300 mL並使反應停止。其後,利用蒸餾水300 mL對乙酸乙酯層進行4次清洗後,利用硫酸鎂進行乾燥,進而餾去乙酸乙酯,藉此獲得原料A 80 g。 1 L of ethyl acetate and 159 g of 2-aminoethanol were added to a 2 L three-necked flask, and the mixture was cooled with an ice bath. It adjusted so that internal temperature might become 20 degreeC or less, and 150 g of 2-bromoisobutyric acid bromide was dripped at it. Thereafter, the internal temperature was raised to room temperature (25 ° C), and the reaction was performed for 2 hours. End of reaction Then, 300 mL of distilled water was added to stop the reaction. Thereafter, the ethyl acetate layer was washed four times with 300 mL of distilled water, and then dried with magnesium sulfate, and then ethyl acetate was distilled off to obtain 80 g of a raw material A.

其次,向500 mL的三口燒瓶中添加原料A 47.4 g、吡啶22 g、乙酸乙酯150 mL並利用冰浴進行冷卻。以使內溫變成20℃以下的方式進行調節並向其中滴加丙烯醯氯25 g。其後,將反應溶液的液溫上昇至室溫並反應3小時。反應結束後,追加蒸餾水300 mL並使反應停止。其後,利用蒸餾水300 mL對乙酸乙酯層進行4次清洗後,利用硫酸鎂進行乾燥,進而餾去乙酸乙酯。其後,藉由管柱層析法來精製並獲得以下所示的單體M1(20 g)。 Next, 47.4 g of raw material A, 22 g of pyridine, and 150 mL of ethyl acetate were added to a 500 mL three-necked flask, and the mixture was cooled in an ice bath. It adjusted so that internal temperature might become 20 degreeC or less, and 25 g of propylene chloride was dripped at it. Thereafter, the liquid temperature of the reaction solution was raised to room temperature and reacted for 3 hours. After the reaction was completed, 300 mL of distilled water was added to stop the reaction. Thereafter, the ethyl acetate layer was washed four times with 300 mL of distilled water, and then dried with magnesium sulfate, and the ethyl acetate was distilled off. Thereafter, the monomer M1 (20 g) shown below was purified by column chromatography.

Figure TWI610814BD00005
Figure TWI610814BD00005

向500 mL的三口燒瓶中添加N,N-二甲基乙醯胺8 g,並於氮氣氣流下加熱至65℃為止。歷時4小時向其中滴加單體M1:14.3 g、丙烯腈(東京化成工業(股份)製造)3.0 g、丙烯酸(東京化成製造)6.5 g、V-65(和光純藥製造)0.4 g的N,N-二甲基乙醯胺8 g溶液。 8 g of N, N-dimethylacetamide was added to a 500 mL three-necked flask, and heated to 65 ° C. under a stream of nitrogen. To this was added dropwise a monomer M1: 14.3 g, acrylonitrile (manufactured by Tokyo Chemical Industry Co., Ltd.) 3.0 g, acrylic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 6.5 g, and V-65 (manufactured by Wako Pure Chemical Industries) 0.4 g of N over a period of 4 hours. , N-dimethylacetamide 8 g solution.

滴加結束後,進而將反應溶液攪拌3小時。其後,追加N,N-二甲基乙醯胺41 g,並將反應溶液冷卻至室溫為 止。向上述反應溶液中添加4-羥基-2,2,6,6-四甲基哌啶-1-氧自由基(2,2,6,6-tetramethylpiperidine 1-Oxyl,TEMPO)(東京化成製造)0.09 g、1,8-二氮雜雙環[5.4.0]十一碳-7-烯(1,8-Diazabicyclo[5.4.0]undec-7-ene,DBU)54.8 g,並於室溫下進行12小時反應。其後,向反應液中添加70質量%甲磺酸水溶液54 g。反應結束後,於水中進行再沈澱,然後取出固形物,獲得聚合物1(12 g)。再者,含有聚合性基的單元:含有腈基的單元:羧酸基單元=30:30:40(mol%)。 After completion of the dropwise addition, the reaction solution was further stirred for 3 hours. Thereafter, 41 g of N, N-dimethylacetamide was added, and the reaction solution was cooled to room temperature to stop. To the above reaction solution was added 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxy radical (2,2,6,6-tetramethylpiperidine 1-Oxyl, TEMPO) (manufactured by Tokyo Chemical Industry) 0.09 g, 1,8-diazabicyclo [5.4.0] undec-7-ene (1,8-Diazabicyclo [5.4.0] undec-7-ene, DBU) 54.8 g, and at room temperature The reaction was performed for 12 hours. Then, 54 g of a 70 mass% methanesulfonic acid aqueous solution was added to the reaction liquid. After completion of the reaction, reprecipitation was performed in water, and then the solid matter was taken out to obtain polymer 1 (12 g). In addition, a polymerizable group-containing unit: a nitrile group-containing unit: a carboxylic acid group unit = 30: 30: 40 (mol%).

Figure TWI610814BD00006
Figure TWI610814BD00006

<實例及比較例> <Examples and Comparative Examples> [基板的製作] [Fabrication of substrate]

將GX-13(味之素精密技術(Ajinomoto Fine-Techno))(膜厚為40 μm)真空層壓於附銅層的FR-4(日立化成,玻璃環氧樹脂基板)上後,於180℃下烘烤1小時,將所獲得者作為基板A。再者,銅層(相當於第1金屬層)的 厚度為18 μm。 GX-13 (Ajinomoto Fine-Techno) (film thickness: 40 μm) was vacuum-laminated on a copper-clad FR-4 (Hitachi Kasei, glass epoxy substrate). Bake at 1 degreeC for 1 hour, and the obtained thing was made into board | substrate A. Furthermore, the copper layer (equivalent to the first metal layer) The thickness is 18 μm.

[底層的製作] [Underlying production]

將後述的底層形成用組成物P01~P22的任一種滴加至基板A的表面上,並以1000 rpm旋塗20秒。其後,於180℃下烘烤15分鐘而獲得附底層的基板S001~附底層的基板S022。 Any one of the below-described underlayer-forming compositions P01 to P22 was dropped on the surface of the substrate A, and spin-coated at 1000 rpm for 20 seconds. Then, it baked at 180 degreeC for 15 minutes, and obtained the substrate S001 with a bottom layer-the substrate S022 with a bottom layer.

(底層形成用組成物) (Composition for forming a base layer)

將規定量的以下的表1中所記載的成分添加至1000 ml的聚丙烯(Polypropylene,PP)製的瓶中,使用TK公司製造的均質機(Homo Disper),以8000 rpm使其分散30分鐘,而獲得底層形成用組成物。 A predetermined amount of the components described in Table 1 below was added to a 1000 ml bottle made of polypropylene (Polypropylene, PP), and the homogenizer (Homo Disper) manufactured by TK was used to disperse it at 8000 rpm for 30 minutes. To obtain a composition for forming a bottom layer.

再者,作為分散劑,使用SOLSPERSE24000GR(路博潤(Lubrizol)公司製造)。 As the dispersant, SOLSPERSE 24000GR (manufactured by Lubrizol) was used.

Figure TWI610814BD00007
Figure TWI610814BD00007

[被鍍敷層的製作] [Production of plated layer]

將後述的組成的被鍍敷層形成用組成物滴加至附底層的基板S001~附底層的基板S022的任一者的底層表面上,並以3000rpm旋塗20秒。其後,於150℃下烘烤15分鐘,進而進行UV照射(能量:500mJ,10mW,波長:365nm),形成被鍍敷層,從而獲得加工前積層體S101~加工前積層體S122。 A composition for forming a plated layer having a composition described later was dropped on the bottom surface of any one of the substrate S001 with a substrate to the substrate S022 with a substrate and spin-coated at 3000 rpm for 20 seconds. Thereafter, it was baked at 150 ° C. for 15 minutes, and further subjected to UV irradiation (energy: 500 mJ, 10 mW, wavelength: 365 nm) to form a plated layer, thereby obtaining a pre-processed laminated body S101-pre-processed laminated body S122.

(被鍍敷層形成用組成物) (Composition for forming a plated layer)

向裝入有磁力攪拌器(magnetic stirrer)的200ml燒杯中添加上述聚合物1(2g)、MFG(甲基丙二醇)(78.3g)、水(19.6g)、IRGACURE OXE-02(巴斯夫(BASF)公司製造)(0.1g),調製被鍍敷層形成用組成物。 Add the above polymer 1 (2g), MFG (methylpropanediol) (78.3g), water (19.6g), IRGACURE OXE-02 (BASF) to a 200ml beaker filled with a magnetic stirrer. (Manufactured by the company) (0.1 g) to prepare a composition for forming a plated layer.

[孔形成步驟] [Hole formation step]

利用設為以孔的大小於被鍍敷層表面上成為90μm、於GX-13/銅界面上成為70μm的條件輸出的CO2雷射加工機(日立維亞機械(Hitachi Via Mechanics)製造,LC-K),對加工前積層體S101~加工前積層體S122的任一者進行CO2雷射通道加工(孔數:961個),而獲得附孔積層體S201~附孔積層體S222。 A CO 2 laser processing machine (manufactured by Hitachi Via Mechanics, LC) set up with a hole size of 90 μm on the surface of the plated layer and a conditional output of 70 μm on the GX-13 / copper interface. -K), performing CO 2 laser channel processing (the number of holes: 961) on any one of the pre-processed laminated body S101 to the pre-processed laminated body S122 to obtain a hole-attached layered body S201-hole-attached layered body S222.

[觸媒賦予步驟、及鍍敷步驟] [Catalyst providing step and plating step]

於50℃下,使附孔積層體S201~附孔積層體S222的任一者在清潔劑調和液ACL-009(上村工業)中浸漬5分鐘,然後利用純水清洗2次。其後,於室溫下在Pd觸媒賦予液MAT-2(上村工業)中浸漬5分鐘,然後利用純水 清洗2次。 At 50 ° C., immerse any one of the porous layered body S201 to porous body layered body S222 in the detergent solution ACL-009 (Uemura Industries) for 5 minutes, and then wash it twice with pure water. After that, it was immersed in Pd catalyst-imparting solution MAT-2 (Uemura Industries) for 5 minutes at room temperature, and then purified water was used. Wash 2 times.

繼而,於36℃下,使實施了上述處理的附孔積層體在還原劑MAB(上村工業)中浸漬5分鐘,然後利用純水清洗2次。其後,進而於室溫下在活化處理液MEL-3(上村工業)中浸漬5分鐘,然後不進行清洗而於室溫下在無電解鍍敷液Thru-Cup PEA(上村工業)中浸漬60分鐘,從而於被鍍敷層上形成無電解鍍敷層(厚度:1 μm)。 Then, the laminated body with pores subjected to the above treatment was immersed in a reducing agent MAB (Kamimura Kogyo) for 5 minutes at 36 ° C, and then washed twice with pure water. After that, it was immersed in the activation treatment liquid MEL-3 (Kamimura Kogyo) for 5 minutes at room temperature, and then immersed in the electroless plating solution Thru-Cup PEA (Kamimura Kogyo) for 60 minutes at room temperature without cleaning. Minutes, thereby forming an electroless plated layer (thickness: 1 μm) on the plated layer.

進而,使用水1283 g、硫酸銅五水合物135 g、98%濃硫酸342 g、36%濃鹽酸0.25 g、ET-901M(羅門哈斯(Rohm and Haas))39.6 g的混合溶液作為電解鍍敷液,將形成有無電解鍍敷層的附孔積層體與銅板安裝於固定器上後與電源連接,然後以3 A/dm2進行45分鐘電解鍍銅處理,而獲得具有約18 μm的鍍銅層(金屬層)的多層基板(水準1~水準22)。 Furthermore, a mixed solution of 1283 g of water, 135 g of copper sulfate pentahydrate, 342 g of 98% concentrated sulfuric acid, 0.25 g of 36% concentrated hydrochloric acid, and 39.6 g of ET-901M (Rohm and Haas) was used as the electrolytic plating. After applying the liquid, the laminated body with holes formed with an electroless plating layer and a copper plate were mounted on a holder, and then connected to a power source, and then subjected to electrolytic copper plating treatment at 3 A / dm 2 for 45 minutes to obtain a plating having a thickness of about 18 μm. Multilayer substrate (level 1 to level 22) of copper layer (metal layer).

[密接性評價] [Adhesiveness evaluation]

於150℃下對水準1~水準22(實例及比較例)中所獲得的多層基板進行15分鐘烘烤。於所獲得的樣品的金屬層的不存在孔(通道)的部分隔開10 mm的間隔,平行地切入130 mm的切口,利用切割器於其端部切入切口並上升10 mm。抓住經剝離的端部並使用Tensilon(島津(SHIMAZU))測定剝離強度(拉伸速度為50 mm/min)。將結果匯總並示於表2。 The multilayer substrates obtained in Levels 1 to 22 (Examples and Comparative Examples) were baked at 150 ° C for 15 minutes. A portion of the metal layer of the obtained sample where no holes (channels) were present was cut at a distance of 10 mm, and a 130 mm incision was cut in parallel, and a cut was made at the end with a cutter and raised by 10 mm. The peeled end was grasped and the peel strength was measured using Tensilon (SHIMAZU) (tensile speed: 50 mm / min). The results are summarized and shown in Table 2.

再者,將密接性為0.7 kN/m以上的情況設為「A」,將密接性為0.5 kN/m以上、未滿0.7 kN/m的情況設為「B」, 將密接性未滿0.5 kN/m的情況設為「C」。 Furthermore, the case where the adhesion is 0.7 kN / m or more is "A", and the case where the adhesion is 0.5 kN / m or more and less than 0.7 kN / m is "B", The case where the adhesion is less than 0.5 kN / m is set to "C".

[孔形狀評價] [Evaluation of hole shape]

水準1~水準22(實例及比較例)中所獲得的附孔積層體的形狀評價是藉由剖面SEM像來進行。 The shape evaluation of the laminated body with pores obtained in Levels 1 to 22 (Examples and Comparative Examples) was performed using cross-sectional SEM images.

更具體而言,自實施了上述[孔形成步驟]後的附孔積層體中任意地選擇100個孔,藉由對100個孔進行觀察來確認形狀不良。當將通道孔直徑設為100%時,將相對於通道徑90 μm,被鍍敷層朝通道內外方向的凸出(突出(overhang))為2%以上的情況設為故障。 More specifically, 100 holes were arbitrarily selected from the laminated body with holes after the above-mentioned [hole formation step] was performed, and the shape defects were confirmed by observing the 100 holes. When the channel hole diameter is set to 100%, a case where the plating layer has a protrusion (overhang) of 2% or more relative to the channel diameter of 90 μm is regarded as a failure.

當對100個孔進行了觀察時,將認定有上述故障的孔的數量為1個以下的情況評價為「A」,將認定有上述故障的孔的數量為2個以上、10個以下的情況評價為「B」,將認定有上述故障的孔的數量為11個以上的情況評價為「C」。將結果匯總並示於表2。 When 100 holes were observed, the case where the number of holes identified as having the above failure was 1 or less was evaluated as "A", and the number of holes identified as having the above failure was 2 or more and 10 or less. The evaluation was "B", and the case where the number of holes identified as having the above-mentioned failure was 11 or more was evaluated as "C". The results are summarized and shown in Table 2.

表2中,「底層形成用組成物的種類」一欄表示各水準中使用的底層形成用組成物的種類。 In Table 2, the column "Type of composition for formation of underlayer" shows the type of composition for formation of underlayer used at each level.

表2中,「氰基率」表示底層中的具有含有氰基的重複單元的聚合物中,含有氰基的重複單元相對於所有重複單元的含量(莫耳%)。 In Table 2, the "cyano group ratio" indicates the content (mole%) of the cyano group-containing repeating unit in the polymer having the cyano group-containing repeating unit in the bottom layer with respect to all the repeating units.

表2中,「二氧化矽粒徑」及「二氧化矽濃度」分別表示底層中的二氧化矽粒子的「粒徑(nm)」、及底層中的二氧化矽粒子相對於聚合物及二氧化矽粒子的合計總質量的「濃度(質量%)」。 In Table 2, "silicon dioxide particle size" and "silicon dioxide concentration" indicate the "particle diameter (nm)" of the silicon dioxide particles in the bottom layer, and the relative proportion of the silicon dioxide particles in the bottom layer to the polymer and the "Concentration (mass%)" of the total mass of the silica particles.

Figure TWI610814BD00008
Figure TWI610814BD00008

如表2所示,於含有顯示規定的氰基率的聚合物、且含有規定量的規定的大小的金屬氧化物粒子的形態(實例1~實例14)中,顯示優異的孔形狀精度及優異的金屬層的密接性。 As shown in Table 2, in a form (Example 1 to Example 14) containing a polymer showing a predetermined cyano ratio and containing a predetermined amount of metal oxide particles of a predetermined size, it showed excellent pore shape accuracy and excellent The adhesion of the metal layer.

尤其,於金屬氧化物粒子的含量為20質量%~50質量%(例如,水準3~水準6)時,顯示更優異的金屬層的密接性。 In particular, when the content of the metal oxide particles is 20% by mass to 50% by mass (for example, level 3 to level 6), more excellent adhesion of the metal layer is exhibited.

另一方面,於不含規定的聚合物、或不含規定的金屬氧化物粒子的比較例1~比較例8中,孔形狀精度或金屬層的密接性的至少一者欠佳。 On the other hand, in Comparative Examples 1 to 8 which did not contain a predetermined polymer or a predetermined metal oxide particle, at least one of the accuracy of the pore shape and the adhesion of the metal layer was not good.

<實例15> <Example 15>

於180℃下對實例1中所獲得的多層基板進行1小時的熱處理後,利用真空層壓機(名機製作所(股份)製造:MVLP-600)以70℃、0.2 MPa將乾式抗蝕劑膜(日立化成(股份)製造;RY3315,膜厚為15 μm)層壓於該多層基板的第2金屬層表面。繼而,使層壓有乾式抗蝕劑膜的多層基板與可形成JPCA-ET01中所規定的梳型配線(依據JPCA-BU01-2007)的玻璃遮罩密接,利用中心波長為405 nm的曝光機對抗蝕劑照射70 mJ的光能。以0.2 MPa的噴壓對曝光後的多層基板噴附1%Na2CO3水溶液而進行顯影。其後,進行多層基板的水洗、乾燥,而於第2金屬層上形成減成法用的抗蝕劑圖案。 The multilayer substrate obtained in Example 1 was heat-treated at 180 ° C for 1 hour, and then a dry resist film was applied at 70 ° C and 0.2 MPa using a vacuum laminator (Made by Seiki Seisakusho Co., Ltd .: MVLP-600). (Manufactured by Hitachi Chemical Co., Ltd .; RY3315, film thickness 15 μm) laminated on the surface of the second metal layer of the multilayer substrate. Next, the multilayer substrate on which the dry-resist film is laminated is brought into close contact with a glass mask capable of forming comb wiring (according to JPCA-BU01-2007) specified in JPCA-ET01, and an exposure machine having a center wavelength of 405 nm is used. The resist was irradiated with 70 mJ of light energy. The exposed multilayer substrate was sprayed with a 1% Na 2 CO 3 aqueous solution at a spray pressure of 0.2 MPa for development. Thereafter, the multilayer substrate is washed with water and dried to form a resist pattern for the subtractive method on the second metal layer.

於溫度40℃下將形成有抗蝕劑圖案的多層基板浸漬於FeCl3/HCl水溶液(蝕刻液)中,藉此進行蝕刻,而將未形成抗蝕劑圖案的區域中所存在的第2金屬層去除。其後,以0.2 MPa的噴壓對多層基板上噴附3%NaOH水溶液,藉此將抗蝕劑圖案膨潤剝離,然後利用10%硫酸水溶液進行中和處理,並進行水洗,藉此獲得梳型配線(圖案狀金屬層)。所獲得的配線的L/S=75 μm/75 μm。 The second substrate in the region where the resist pattern was not formed was etched by immersing the multilayer substrate on which the resist pattern was formed in an aqueous FeCl 3 / HCl solution (etching solution) at a temperature of 40 ° C. Layer removed. Thereafter, a 3% NaOH aqueous solution was sprayed on the multilayer substrate with a spray pressure of 0.2 MPa to swell and peel the resist pattern, and then neutralized with a 10% sulfuric acid aqueous solution and washed with water to obtain a comb type. Wiring (patterned metal layer). L / S of the obtained wiring was 75 μm / 75 μm.

進而,針對具有圖案狀金屬層的多層基板,以110℃、0.2 MPa的條件真空層壓阻焊劑(PFR800;太陽油墨製造(TAIYO INK MFG)(股份)製造),然後利用中心波長為365 nm的曝光機照射420 mJ的光能。 Further, for a multilayer substrate having a patterned metal layer, a solder resist (PFR800; manufactured by TAIYO INK MFG) (stock) was vacuum-laminated under conditions of 110 ° C and 0.2 MPa, and a center wavelength of 365 nm The exposure machine radiates 420 mJ of light energy.

繼而,對多層基板實施80℃/10分鐘的加熱處理後, 以2kg/m2的噴壓將NaHCO3:10%水溶液賦予至多層基板表面,藉此進行顯影、乾燥。其後,再次利用中心波長為365nm的曝光機對多層基板照射1000mJ的光能。最後進行150℃/1hr的加熱處理,而獲得由阻焊劑包覆的配線基板。 Next, the multilayer substrate was subjected to a heating treatment at 80 ° C. for 10 minutes, and then a NaHCO 3 : 10% aqueous solution was applied to the surface of the multilayer substrate at a spray pressure of 2 kg / m 2 to perform development and drying. Thereafter, the multi-layer substrate was irradiated with light energy of 1000 mJ again using an exposure machine having a center wavelength of 365 nm. Finally, heat treatment was performed at 150 ° C / 1hr to obtain a wiring substrate covered with a solder resist.

10、100‧‧‧加工前積層體 10、100‧‧‧Laminated body before processing

12‧‧‧基板 12‧‧‧ substrate

14‧‧‧第1金屬層 14‧‧‧ 1st metal layer

16‧‧‧底層 16‧‧‧ ground floor

18‧‧‧被鍍敷層 18‧‧‧ is plated

20、200‧‧‧附孔積層體 20, 200‧‧‧ Laminated with holes

22‧‧‧孔 22‧‧‧hole

24、240‧‧‧多層基板 24, 240‧‧‧ multilayer substrate

26‧‧‧第2金屬層 26‧‧‧Second metal layer

28‧‧‧圖案狀的金屬層 28‧‧‧ patterned metal layer

30‧‧‧絕緣層 30‧‧‧ Insulation

圖1之(A)~圖1之(D)是分別依次表示本發明的附孔積層體及多層基板的製造方法的第1實施形態中的各製造步驟的示意剖面圖。 FIGS. 1 (A) to 1 (D) are schematic cross-sectional views showing respective manufacturing steps in the first embodiment of the method for manufacturing a laminated body with holes and a multilayer substrate according to the present invention, respectively.

圖2之(A)~圖2之(D)是分別依次表示本發明的附孔積層體及多層基板的製造方法的第2實施形態中的各製造步驟的示意剖面圖。 FIGS. 2 (A) to 2 (D) are schematic cross-sectional views showing respective manufacturing steps in the second embodiment of the method for manufacturing a laminated body with holes and a multilayer substrate according to the present invention, respectively.

10‧‧‧加工前積層體 10‧‧‧Laminated body before processing

12‧‧‧基板 12‧‧‧ substrate

14‧‧‧第1金屬層 14‧‧‧ 1st metal layer

16‧‧‧底層 16‧‧‧ ground floor

18‧‧‧被鍍敷層 18‧‧‧ is plated

20‧‧‧附孔積層體 20‧‧‧ Laminated with Pore

22‧‧‧孔 22‧‧‧hole

24‧‧‧多層基板 24‧‧‧Multi-layer substrate

26‧‧‧第2金屬層 26‧‧‧Second metal layer

28‧‧‧圖案狀的金屬層 28‧‧‧ patterned metal layer

Claims (7)

一種附孔積層體的製造方法,包括如下的孔形成步驟:對在基板上依次具備第1金屬層、底層及被鍍敷層的加工前積層體實施雷射加工,而形成自上述加工前積層體的上述被鍍敷層側的表面到達上述第1金屬層表面的孔,上述底層包含具有含有氰基的重複單元的聚合物及金屬氧化物粒子,上述被鍍敷層具有與鍍敷觸媒或其前驅物相互作用的官能基,且上述含有氰基的重複單元具有由式(1)所表示的結構,相對於上述聚合物中的所有重複單元,上述聚合物中的含有氰基的重複單元的含量為10莫耳%~60莫耳%,上述金屬氧化物粒子包含選自由週期表4A元素、5A元素、3B元素、及4B元素所組成的組群中的至少1種金屬元素的金屬氧化物粒子,上述金屬氧化物粒子的粒徑為50nm~2000nm,且相對於上述聚合物及上述金屬氧化物粒子的合計質量,上述底層中的金屬氧化物粒子的含量為20質量%~60質量%,上述鍍敷觸媒包含具有自催化還原反應的催化活性的金屬的化合物,上述官能基選自下述的基團或其鹽:胺基、醯胺基、醯亞胺基、脲基、三級胺基、銨基、甲脒基、三嗪環、三唑環、苯并三唑基、咪唑基、苯并咪唑基、喹啉基、吡啶基、嘧啶基、吡嗪基、喹唑啉基、喹噁啉基、嘌呤基、三 嗪基、哌啶基、哌嗪基、吡咯啶基、吡唑基、苯胺基、含有烷基胺結構的基、含有異三聚氰酸結構的基、硝基、亞硝基、偶氮基、重氮基、疊氮基、氰基、氰酸酯基、醚基、羥基、酚性羥基、羧基、碳酸酯基、羰基、酯基、含有N-氧化物結構的基、含有S-氧化物結構的基、含有N-羥基結構的基、噻吩基、硫醇基、硫脲基、三聚硫氰酸基、苯并噻唑基、巰基三嗪基、硫醚基、硫氧基、亞碸基、碸基、亞硫酸基、含有碸亞胺結構的基、含有氧化鋶鹽結構的基、磺酸基、含有磺酸酯結構的基、磷酸酯基、磷醯胺基、膦基、含有磷酸酯結構的基、含有氯原子的基以及含有溴原子的基,
Figure TWI610814BC00001
式(1)中,R7表示氫原子或者經取代或未經取代的烷基,L4表示單鍵或者經取代或未經取代的二價的有機基。
A method for manufacturing a laminated body with holes includes a hole forming step of performing laser processing on a pre-processed laminated body having a first metal layer, a bottom layer, and a plated layer in order on the substrate to form the pre-processed laminated layer. The surface of the plated layer side of the body reaches the hole of the surface of the first metal layer, the bottom layer contains a polymer having repeating units containing a cyano group and metal oxide particles, and the plated layer has a contact with a plating catalyst. Or its precursor interacts with a functional group, and the cyano-containing repeating unit has a structure represented by formula (1), and the cyano-containing repeating in the polymer is relative to all the repeating units in the polymer. The content of the unit is 10 mol% to 60 mol%, and the metal oxide particles include a metal of at least one metal element selected from the group consisting of 4A element, 5A element, 3B element, and 4B element of the periodic table. Oxide particle, the particle diameter of the metal oxide particle is 50 nm to 2000 nm, and the metal oxide particle in the bottom layer is relative to the total mass of the polymer and the metal oxide particle The content is 20% by mass to 60% by mass. The plating catalyst includes a compound of a metal having a catalytic activity for a self-catalytic reduction reaction, and the functional group is selected from the following groups or salts thereof: amine group, amidine group, Hydrazone, ureido, tertiary amine, ammonium, formamidine, triazine ring, triazole ring, benzotriazolyl, imidazolyl, benzimidazolyl, quinolinyl, pyridyl, pyrimidine Group, pyrazinyl group, quinazolinyl group, quinoxaline group, purinyl group, triazinyl group, piperidinyl group, piperazinyl group, pyrrolidinyl group, pyrazolyl group, aniline group, group containing alkylamine structure, Isocyanuric group-containing group, nitro, nitroso, azo, diazo, azide, cyano, cyanate, ether, hydroxyl, phenolic hydroxyl, carboxyl, carbonate Group, carbonyl group, ester group, group containing N-oxide structure, group containing S-oxide structure, group containing N-hydroxy structure, thienyl group, thiol group, thiourea group, trimeric thiocyanate group , Benzothiazolyl, mercaptotriazinyl, thioether, thiooxy, fluorenyl, fluorenyl, sulfite, fluorenimine-containing group, oxidizing group Group, a sulfonic acid salt structure-containing group, a phosphate group, phosphorous acyl group, a phosphino group sulfonic acid ester structure, a group containing a phosphoric ester structure-containing group and a group containing chlorine atoms, bromine atoms,
Figure TWI610814BC00001
In the formula (1), R 7 represents a hydrogen atom or a substituted or unsubstituted alkyl group, and L 4 represents a single bond or a substituted or unsubstituted divalent organic group.
如申請專利範圍第1項所述之附孔積層體的製造方法,其中相對於上述聚合物及上述金屬氧化物粒子的合計質量,上述底層中的金屬氧化物粒子的含量為20質量%~50質量%。 The method for manufacturing a laminated body with pores according to item 1 of the scope of the patent application, wherein the content of the metal oxide particles in the bottom layer is 20% to 50% of the total mass of the polymer and the metal oxide particles. quality%. 一種多層基板的製造方法,其包括:觸媒賦予步驟,對藉由如申請專利範圍第1項或第2項所述之製造方法所獲得的附孔積層體中的上述被鍍敷層 賦予鍍敷觸媒或其前驅物;以及鍍敷步驟,對賦予有上述鍍敷觸媒或其前驅物的被鍍敷層進行鍍敷處理,將經由上述孔而與上述第1金屬層接觸並導通的第2金屬層形成於上述被鍍敷層上。 A method for manufacturing a multi-layer substrate, comprising: a catalyst providing step for applying the above-mentioned plated layer in the laminated body with holes obtained by the manufacturing method described in the first or second aspect of the patent application scope; Providing a plating catalyst or a precursor thereof; and a plating step of subjecting the plated layer to which the above-mentioned plating catalyst or its precursor is provided to a plating layer to contact the first metal layer through the hole and The conductive second metal layer is formed on the plated layer. 如申請專利範圍第3項所述之多層基板的製造方法,其中更包括於上述鍍敷步驟後,將上述第2金屬層蝕刻成圖案狀,而形成圖案狀金屬層的圖案形成步驟。 The method for manufacturing a multilayer substrate according to item 3 of the scope of the patent application, further comprising a pattern forming step of etching the second metal layer into a pattern after the plating step, and forming a patterned metal layer. 一種印刷配線基板,包括藉由如申請專利範圍第3項或第4項所述之製造方法所製造的多層基板。 A printed wiring board includes a multilayer substrate manufactured by a manufacturing method as described in item 3 or 4 of the scope of patent application. 一種附孔積層體,在基板上依次包括第1金屬層、底層及被鍍敷層,上述底層包含具有含有氰基的重複單元的聚合物及金屬氧化物粒子,上述被鍍敷層具有與鍍敷觸媒或其前驅物相互作用的官能基,上述含有氰基的重複單元具有由式(1)所表示的結構,相對於上述聚合物中的所有重複單元,上述聚合物中的含有氰基的重複單元的含量為10莫耳%~60莫耳%,上述金屬氧化物粒子包含選自由週期表4A元素、5A元素、3B元素、及4B元素所組成的組群中的至少1種金屬元素的金屬氧化物粒子,上述金屬氧化物粒子的粒徑為50nm~2000nm,相對於上述聚合物及上述金屬氧化物粒子的合計質量,上述底層中的金屬氧化物粒子的含量為20質量%~60質量%,且具有自上述被鍍敷層側的表面到達上述第1金屬層表 面的孔,上述鍍敷觸媒包含具有自催化還原反應的催化活性的金屬的化合物,上述官能基選自下述的基團或其鹽:胺基、醯胺基、醯亞胺基、脲基、三級胺基、銨基、甲脒基、三嗪環、三唑環、苯并三唑基、咪唑基、苯并咪唑基、喹啉基、吡啶基、嘧啶基、吡嗪基、喹唑啉基、喹噁啉基、嘌呤基、三嗪基、哌啶基、哌嗪基、吡咯啶基、吡唑基、苯胺基、含有烷基胺結構的基、含有異三聚氰酸結構的基、硝基、亞硝基、偶氮基、重氮基、疊氮基、氰基、氰酸酯基、醚基、羥基、酚性羥基、羧基、碳酸酯基、羰基、酯基、含有N-氧化物結構的基、含有S-氧化物結構的基、含有N-羥基結構的基、噻吩基、硫醇基、硫脲基、三聚硫氰酸基、苯并噻唑基、巰基三嗪基、硫醚基、硫氧基、亞碸基、碸基、亞硫酸基、含有碸亞胺結構的基、含有氧化鋶鹽結構的基、磺酸基、含有磺酸酯結構的基、磷酸酯基、磷醯胺基、膦基、含有磷酸酯結構的基、含有氯原子的基以及含有溴原子的基,
Figure TWI610814BC00002
式(1)中,R7表示氫原子或者經取代或未經取代的烷基,L4表示單鍵或者經取代或未經取代的二價的有機基。
A laminated body with holes includes a first metal layer, a bottom layer, and a plated layer in this order on a substrate. The bottom layer includes a polymer having a repeating unit containing a cyano group and metal oxide particles. A functional group that interacts with a catalyst or a precursor thereof. The cyano-containing repeating unit has a structure represented by formula (1). The cyano group is contained in the polymer with respect to all the repeating units in the polymer. The content of the repeating unit is 10 mol% to 60 mol%. The metal oxide particles include at least one metal element selected from the group consisting of 4A element, 5A element, 3B element, and 4B element of the periodic table. The metal oxide particles have a particle diameter of 50 to 2000 nm, and the content of the metal oxide particles in the underlayer is 20 to 60% by mass relative to the total mass of the polymer and the metal oxide particles. % By mass, and has a hole from the surface on the side to be plated to the surface of the first metal layer, the plating catalyst contains a compound of a metal having a catalytic activity for a self-catalytic reduction reaction, The functional group is selected from the following groups or salts thereof: amine group, amidine group, amido group, urea group, tertiary amino group, ammonium group, formamidine group, triazine ring, triazole ring, benzene Benzotriazolyl, imidazolyl, benzimidazolyl, quinolinyl, pyridyl, pyrimidinyl, pyrazinyl, quinazolinyl, quinoxaline, purinyl, triazinyl, piperidinyl, piperazine Group, pyrrolidinyl group, pyrazolyl group, aniline group, group containing alkylamine structure, group containing isocyanuric acid structure, nitro group, nitroso group, azo group, diazo group, azide group, Cyano, cyanate, ether, hydroxyl, phenolic hydroxyl, carboxyl, carbonate, carbonyl, ester, N-oxide structure-containing group, S-oxide structure-containing group, N-hydroxy group Structural groups, thienyl, thiol, thiourea, trimeric thiocyanate, benzothiazolyl, mercaptotriazine, thioether, thiooxy, fluorenyl, fluorenyl, sulfite , A group containing a sulfonium imine structure, a group containing a sulfonium oxide structure, a sulfonic acid group, a group containing a sulfonate structure, a phosphate group, a phosphoramido group, a phosphine group, a phosphate group structure Group, a group containing a group containing chlorine atoms and bromine atoms,
Figure TWI610814BC00002
In the formula (1), R 7 represents a hydrogen atom or a substituted or unsubstituted alkyl group, and L 4 represents a single bond or a substituted or unsubstituted divalent organic group.
一種底層形成用組成物,包括具有含有氰基的重複單元的聚合物及金屬氧化物粒子,上述含有氰基的重複單元具有由式(1)所表示的結構,相對於聚合物中的所有重複單元,上述聚合物中的含有氰基的重複單元的含量為10莫耳%~60莫耳%,上述金屬氧化物粒子包含選自由週期表4A元素、5A元素、3B元素、及4B元素所組成的組群中的至少1種金屬元素的金屬氧化物粒子,上述金屬氧化物粒子的粒徑為50nm~2000nm,且相對於上述聚合物及上述金屬氧化物粒子的合計質量,由上述底層形成用組成物所形成的底層中的金屬氧化物粒子的含量為20質量%~60質量%,
Figure TWI610814BC00003
式(1)中,R7表示氫原子或者經取代或未經取代的烷基,L4表示單鍵或者經取代或未經取代的二價的有機基。
A composition for forming a bottom layer, comprising a polymer having a cyano group-containing repeating unit and metal oxide particles, and the cyano group-containing repeating unit has a structure represented by formula (1), and is relative to all repeats in the polymer. Unit, the content of the cyano-containing repeating unit in the polymer is 10 mol% to 60 mol%, and the metal oxide particles include a member selected from the group consisting of 4A element, 5A element, 3B element, and 4B element of the periodic table The metal oxide particles of at least one kind of metal element in the group have a particle diameter of 50 nm to 2000 nm, and are used for the formation of the underlayer relative to the total mass of the polymer and the metal oxide particles. The content of the metal oxide particles in the bottom layer formed by the composition is 20% by mass to 60% by mass,
Figure TWI610814BC00003
In the formula (1), R 7 represents a hydrogen atom or a substituted or unsubstituted alkyl group, and L 4 represents a single bond or a substituted or unsubstituted divalent organic group.
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