TWI610782B - Release film and method of manufacturing semiconductor device using same - Google Patents
Release film and method of manufacturing semiconductor device using same Download PDFInfo
- Publication number
- TWI610782B TWI610782B TW102103305A TW102103305A TWI610782B TW I610782 B TWI610782 B TW I610782B TW 102103305 A TW102103305 A TW 102103305A TW 102103305 A TW102103305 A TW 102103305A TW I610782 B TWI610782 B TW I610782B
- Authority
- TW
- Taiwan
- Prior art keywords
- release film
- mold
- resin
- semiconductor device
- cavity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 65
- 229920005989 resin Polymers 0.000 claims description 200
- 239000011347 resin Substances 0.000 claims description 200
- 238000007789 sealing Methods 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 51
- 239000000178 monomer Substances 0.000 claims description 44
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 39
- 229920001187 thermosetting polymer Polymers 0.000 claims description 20
- 238000000748 compression moulding Methods 0.000 claims description 10
- 229920001577 copolymer Polymers 0.000 claims description 10
- 238000001721 transfer moulding Methods 0.000 claims description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 7
- 239000005977 Ethylene Substances 0.000 claims description 7
- GVEUEBXMTMZVSD-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,6-nonafluorohex-1-ene Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C=C GVEUEBXMTMZVSD-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 24
- 238000012360 testing method Methods 0.000 description 14
- -1 polyoxymethylene Polymers 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000004743 Polypropylene Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 125000001153 fluoro group Chemical group F* 0.000 description 6
- 229930040373 Paraformaldehyde Natural products 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920006324 polyoxymethylene Polymers 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KHXKESCWFMPTFT-UHFFFAOYSA-N 1,1,1,2,2,3,3-heptafluoro-3-(1,2,2-trifluoroethenoxy)propane Chemical compound FC(F)=C(F)OC(F)(F)C(F)(F)C(F)(F)F KHXKESCWFMPTFT-UHFFFAOYSA-N 0.000 description 1
- NDMMKOCNFSTXRU-UHFFFAOYSA-N 1,1,2,3,3-pentafluoroprop-1-ene Chemical compound FC(F)C(F)=C(F)F NDMMKOCNFSTXRU-UHFFFAOYSA-N 0.000 description 1
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- SKYXLDSRLNRAPS-UHFFFAOYSA-N 1,2,4-trifluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C=C1F SKYXLDSRLNRAPS-UHFFFAOYSA-N 0.000 description 1
- UJIGKESMIPTWJH-UHFFFAOYSA-N 1,3-dichloro-1,1,2,2,3-pentafluoropropane Chemical compound FC(Cl)C(F)(F)C(F)(F)Cl UJIGKESMIPTWJH-UHFFFAOYSA-N 0.000 description 1
- JMGNVALALWCTLC-UHFFFAOYSA-N 1-fluoro-2-(2-fluoroethenoxy)ethene Chemical compound FC=COC=CF JMGNVALALWCTLC-UHFFFAOYSA-N 0.000 description 1
- JSGITCLSCUKHFW-UHFFFAOYSA-N 2,2,4-trifluoro-5-(trifluoromethoxy)-1,3-dioxole Chemical compound FC1=C(OC(F)(F)F)OC(F)(F)O1 JSGITCLSCUKHFW-UHFFFAOYSA-N 0.000 description 1
- ZHKVUSSHABANQG-UHFFFAOYSA-N 2,3,3,4,4,5,5-heptafluoropent-1-ene Chemical compound FC(F)C(F)(F)C(F)(F)C(F)=C ZHKVUSSHABANQG-UHFFFAOYSA-N 0.000 description 1
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- YSYRISKCBOPJRG-UHFFFAOYSA-N 4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole Chemical compound FC1=C(F)OC(C(F)(F)F)(C(F)(F)F)O1 YSYRISKCBOPJRG-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920006358 Fluon Polymers 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- FOLMJWGRLCTGFX-UHFFFAOYSA-N O=C(C(C(F)(F)F)(C(F)(F)F)F)C(C(F)=O)=C(F)F Chemical compound O=C(C(C(F)(F)F)(C(F)(F)F)F)C(C(F)=O)=C(F)F FOLMJWGRLCTGFX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0067—Using separating agents during or after moulding; Applying separating agents on preforms or articles, e.g. to prevent sticking to each other
- B29C37/0075—Using separating agents during or after moulding; Applying separating agents on preforms or articles, e.g. to prevent sticking to each other using release sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/50—Removing moulded articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F10/00—Homopolymers and copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
- C08F10/04—Monomers containing three or four carbon atoms
- C08F10/06—Propene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
- C08F214/26—Tetrafluoroethene
- C08F214/265—Tetrafluoroethene with non-fluorinated comonomers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
- B29C2043/181—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles encapsulated
- B29C2043/182—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles encapsulated completely
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/34—Feeding the material to the mould or the compression means
- B29C2043/3444—Feeding the material to the mould or the compression means using pressurising feeding means located in the mould, e.g. plungers or pistons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
- B29C2045/14663—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame the mould cavity walls being lined with a film, e.g. release film
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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- B29K2827/00—Use of polyvinylhalogenides or derivatives thereof as mould material
- B29K2827/12—Use of polyvinylhalogenides or derivatives thereof as mould material containing fluorine
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2011/00—Optical elements, e.g. lenses, prisms
- B29L2011/0016—Lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
- B29L2031/3406—Components, e.g. resistors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
- B29L2031/3481—Housings or casings incorporating or embedding electric or electronic elements
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08J2327/18—Homopolymers or copolymers of tetrafluoroethylene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
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- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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Description
本發明係有關於一種配置於模具之模槽面的脫模膜及使用該脫模膜之半導體裝置的製造方法，且前述模具係以密封樹脂將半導體裝置之半導體元件密封而形成樹脂密封部者。 The present invention relates to a release film disposed on a cavity surface of a mold, and a method of manufacturing a semiconductor device using the release film, wherein the mold is formed by sealing a semiconductor element of a semiconductor device with a sealing resin to form a resin sealing portion. .
半導體裝置(包含發光二極體)為了保護半導體元件(包含發光元件)，而具有以密封樹脂將半導體元件密封的樹脂密封部。又，在發光二極體中，該樹脂密封部亦具有作為透鏡部的機能，用以將自發光元件放射之光方向集結於發光二極體之正面方向，使正面輝度提升。 The semiconductor device (including the light-emitting diode) has a resin sealing portion that seals the semiconductor element with a sealing resin in order to protect the semiconductor element (including the light-emitting element). Further, in the light-emitting diode, the resin sealing portion also has a function as a lens portion for collecting the light emitted from the light-emitting element in the front direction of the light-emitting diode to increase the front luminance.
最近，在較習知更高光束的照明用途(家庭用屋頂照明、汽車用前照燈、屋外燈等)上，有擴大展開發光二極體的動向。為達成發光二極體之高光束，勢必需使發光元件積體，而隨之而來即是透鏡部大型化，且透鏡部結構亦趨複雜化。 Recently, there has been an increase in the development of light-emitting diodes in lighting applications (home roof lighting, automotive headlights, outdoor lamps, etc.) which are known for higher beam. In order to achieve a high beam of the light-emitting diode, it is necessary to integrate the light-emitting elements, and accordingly, the lens portion is enlarged, and the structure of the lens portion is also complicated.
作為發光二極體之製造方法，周知有利用所謂的壓縮成形法或轉印成形法之方法，例如將已安裝發光元件 的基板配置成使該發光元件位於模具之模槽內的預定處，並將密封樹脂充填於模槽內而形成透鏡部。在該方法中，通常為了防止密封樹脂與模具之固著，會將脫模膜配置於模具之模槽面(專利文獻1)。 As a method of producing a light-emitting diode, a method using a so-called compression molding method or a transfer molding method, for example, a light-emitting element that has been mounted is known. The substrate is disposed such that the light-emitting element is located at a predetermined portion in the cavity of the mold, and the sealing resin is filled in the cavity to form a lens portion. In this method, in general, in order to prevent fixation of the sealing resin and the mold, the release film is placed on the cavity surface of the mold (Patent Document 1).
專利文獻1：國際公開第2011/037034號 Patent Document 1: International Publication No. 2011/037034
但，習知方法使用的脫模膜在因應透鏡部大型化或複雜化其模具為大型或其結構複雜的情況下，一邊將脫模膜以大面積進行拉伸，且一邊將之配置成覆蓋模具之模槽或使脫模膜追隨於大面積或複雜結構的模槽面時，由於脫模膜整體不會均勻地延伸，因此脫模膜厚度會產生不均。而且，脫模膜厚度的不均會被轉印至透鏡部表面而作為透鏡部表面之應變呈現。如習知，在透鏡部為小型且形狀不甚複雜的情況下，脫模膜厚度的不均難以被轉印至透鏡部表面，故尚不成大問題，但當透鏡部為大型或其結構複雜時，脫模膜厚度的不均很容易被轉印至透鏡部表面，而使透鏡部表面之應變成為發光二極體之發光效率降低及配光參差等之原因。 However, in the case of the release film used in the conventional method, when the lens portion is enlarged or complicated, the mold is large or the structure is complicated, and the release film is stretched over a large area while being disposed to cover it. When the mold cavity of the mold or the mold release film follows the groove surface of a large-area or complicated structure, since the entire release film does not uniformly extend, the thickness of the release film may be uneven. Further, the unevenness of the thickness of the release film is transferred to the surface of the lens portion to be exhibited as the strain of the surface of the lens portion. As is known, when the lens portion is small and the shape is not complicated, the unevenness of the thickness of the release film is difficult to be transferred to the surface of the lens portion, so that it is not a big problem, but when the lens portion is large or complicated in structure, In the case where the thickness of the release film is uneven, it is easily transferred to the surface of the lens portion, and the strain on the surface of the lens portion causes the light-emitting efficiency of the light-emitting diode to decrease, and the light distribution is uneven.
本發明提供一種可製造即便模具之模槽大型化、複雜化仍難以在將脫模膜拉伸時於脫模膜厚度產生不 均之脫模膜，及即便樹脂密封部大型化、複雜化仍可抑制樹脂密封部表面應變的半導體裝置之方法。 The present invention provides that it is difficult to produce a mold release film when the mold release film is stretched, and the thickness of the release film is not generated. A method of a semiconductor device in which the surface of the resin sealing portion is strained can be suppressed even if the resin sealing portion is increased in size and complexity.
本發明提供一種具有下述[1]~[14]構成的脫模膜及使用其之半導體裝置的製造方法。 The present invention provides a release film comprising the following [1] to [14] and a method of producing a semiconductor device using the same.
[1]一種脫模膜，係配置於模具之模槽面者，其中該模具係以硬化性密封樹脂將半導體裝置之半導體元件密封而形成樹脂密封部；該脫模膜依據JIS K 7127測得之於132℃下之拉伸彈性率為10~24MPa，且剝離力之最大值在0.8N/25mm以下。 [1] A release film which is disposed on a cavity surface of a mold, wherein the mold seals a semiconductor element of a semiconductor device with a curable sealing resin to form a resin sealing portion; the release film is measured in accordance with JIS K 7127 The tensile modulus at 132 ° C is 10 to 24 MPa, and the maximum peel strength is 0.8 N / 25 mm or less.
[2]如[1]之脫模膜，其係由氟樹脂所構成。 [2] The release film of [1], which is composed of a fluororesin.
[3]如[2]之脫模膜，其中前述氟樹脂為共聚物，其具有以四氟乙烯為主體之單元、以乙烯為主體之單元及以其等以外之第3單體為主體之單元。 [3] The release film according to [2], wherein the fluororesin is a copolymer having a unit mainly composed of tetrafluoroethylene, a unit mainly composed of ethylene, and a third monomer other than the main monomer. unit.
[4]如[3]之脫模膜，其中前述第3單體係(全氟丁基)乙烯。 [4] The release film of [3], wherein the third single system (perfluorobutyl) ethylene is used.
[5]如[4]之脫模膜，其中前述共聚物係如下所述之共聚物：以四氟乙烯為主體之重複單元與以乙烯為主體之重複單元之莫耳比(四氟乙烯/乙烯)為80/20~40/60，且以(全氟丁基)乙烯為主體之重複單元的比率在全部重複單元(100莫耳%)中為5~10莫耳%。 [5] The release film according to [4], wherein the copolymer is a copolymer as follows: a molar ratio of a repeating unit mainly composed of tetrafluoroethylene to a repeating unit mainly composed of ethylene (tetrafluoroethylene/ The ethylene ratio is 80/20 to 40/60, and the ratio of the repeating unit mainly composed of (perfluorobutyl)ethylene is 5 to 10 mol% in all the repeating units (100 mol%).
[6]一種半導體裝置的製造方法，係使用模具並以硬化性密封樹脂將半導體元件密封而製造半導體裝置之 方法，該方法之特徵在於：於模具與密封樹脂相接觸之模槽面配置脫模膜，並使前述密封樹脂在與前述脫模膜相接觸之狀態下硬化而形成樹脂密封部；其中前述脫模膜依據JIS K 7127測得之於132℃下之拉伸彈性率為10~24MPa，且剝離力之最大值在0.8N/25mm以下。 [6] A method of manufacturing a semiconductor device using a mold and sealing a semiconductor element with a curable sealing resin to manufacture a semiconductor device The method is characterized in that a release film is disposed on a cavity surface of the mold in contact with the sealing resin, and the sealing resin is cured in a state of being in contact with the release film to form a resin sealing portion; The tensile modulus of the film obtained at 132 ° C according to JIS K 7127 was 10 to 24 MPa, and the maximum peeling force was 0.8 N / 25 mm or less.
[7]如[6]之半導體裝置的製造方法，其中前述半導體裝置為發光二極體，前述半導體元件為發光元件，且前述樹脂密封部為透鏡部。 [7] The method of manufacturing a semiconductor device according to [6], wherein the semiconductor device is a light emitting diode, the semiconductor element is a light emitting element, and the resin sealing portion is a lens portion.
[8]如[7]之半導體裝置的製造方法，其中前述透鏡部露出在外側之部分的面積在56mm2以上。 [8] The method of manufacturing a semiconductor device according to [7], wherein an area of the portion where the lens portion is exposed to the outside is 56 mm 2 or more.
[9]如[6]~[8]中任一項之半導體裝置的製造方法，其中密封樹脂為熱硬化性樹脂，且該製造方法係使該密封樹脂在與前述脫模膜相接觸之狀態下熱硬化。 [9] The method of manufacturing a semiconductor device according to any one of [6], wherein the sealing resin is a thermosetting resin, and the manufacturing method is such that the sealing resin is in contact with the release film. Thermal hardening.
[10]如[6]~[9]中任一項之半導體裝置的製造方法，其中使用模具來形成樹脂密封部之方法為壓縮成形法。 [10] The method of manufacturing a semiconductor device according to any one of [6] to [9] wherein the method of forming a resin sealing portion using a mold is a compression molding method.
[11]如[6]~[9]中任一項之半導體裝置的製造方法，其中使用模具來形成樹脂密封部之方法為轉印成形法。 [11] The method of manufacturing a semiconductor device according to any one of [6] to [9] wherein the method of forming a resin sealing portion using a mold is a transfer molding method.
[12]一種半導體裝置的製造方法，具有下述步驟(α1)~(α5)：步驟(α1)，係以覆蓋模具之模槽的方式，配置如[1]~[5]中任一項之脫模膜；步驟(α2)，將前述脫模膜真空抽吸至前述模具之模槽面側；步驟(α3)，將密封樹脂充填於前述模槽內； 步驟(α4)，將半導體元件配置在前述模槽內之預定位置上，並藉由前述密封樹脂將前述半導體元件密封來形成樹脂密封部，進而製得半導體裝置；及步驟(α5)，自前述模具內取出前述半導體裝置。 [12] A method of manufacturing a semiconductor device, comprising the following steps (α1) to (α5): step (α1), wherein any one of [1] to [5] is disposed so as to cover a cavity of the mold. a release film; the step (α2), vacuum pumping the release film to the side of the die surface of the mold; and step (α3), filling the sealing resin into the cavity; Step (α4), disposing a semiconductor element at a predetermined position in the cavity, sealing the semiconductor element by the sealing resin to form a resin sealing portion, thereby fabricating a semiconductor device; and step (α5), from the foregoing The aforementioned semiconductor device is taken out of the mold.
[13]一種半導體裝置的製造方法，具有下述步驟(β1)~(β5)：步驟(β1)，以可覆蓋模具之模槽的方式，配置如[1]~[5]中任一項之脫模膜；步驟(β2)，將前述脫模膜真空抽吸至前述模具之模槽面側；步驟(β3)，將半導體元件配置於前述模槽內之預定位置；步驟(β4)，將密封樹脂充填於前述模槽內，並藉由該密封樹脂將前述半導體元件密封而形成樹脂密封部，製得半導體裝置；及步驟(β5)，自前述模具內取出前述半導體裝置。 [13] A method of manufacturing a semiconductor device, comprising the steps (β1) to (β5): step (β1), wherein any one of [1] to [5] is disposed so as to cover a cavity of the mold. a release film; the step (β2), vacuum drawing the release film to the cavity surface side of the mold; and step (β3), disposing the semiconductor element at a predetermined position in the cavity; step (β4), The sealing resin is filled in the cavity, and the semiconductor element is sealed by the sealing resin to form a resin sealing portion to obtain a semiconductor device; and in the step (β5), the semiconductor device is taken out from the mold.
[14]如[12]或[13]之半導體裝置的製造方法，其中前述半導體裝置為發光二極體，前述半導體元件為發光元件，前述樹脂密封部為透鏡部，且該透鏡部露出在外側之部分的面積在56mm2以上。 [14] The method of manufacturing a semiconductor device according to [12], wherein the semiconductor device is a light emitting diode, the semiconductor element is a light emitting element, the resin sealing portion is a lens portion, and the lens portion is exposed outside. The area of the part is 56 mm 2 or more.
本發明之脫模膜即便模具之模槽大型化、複雜化，仍難以在拉伸脫模膜時於脫模膜厚度產生不均。 In the release film of the present invention, even if the cavity of the mold is enlarged and complicated, it is difficult to cause unevenness in the thickness of the release film when the release film is stretched.
依據本發明之半導體裝置的製造方法，可製造即便樹脂密封部大型化、複雜化仍可抑制樹脂密封部表面應變的半導體裝置。 According to the method of manufacturing a semiconductor device of the present invention, it is possible to manufacture a semiconductor device capable of suppressing strain on the surface of the resin sealing portion even if the resin sealing portion is increased in size and complexity.
1‧‧‧發光二極體 1‧‧‧Lighting diode
10‧‧‧基板 10‧‧‧Substrate
12‧‧‧發光元件 12‧‧‧Lighting elements
14‧‧‧透鏡部 14‧‧‧ lens department
16‧‧‧硬化物 16‧‧‧ hardened material
20、50‧‧‧上模 20, 50‧‧‧上模
22、52‧‧‧下模 22, 52‧‧‧
24、54‧‧‧模槽 24, 54‧‧ ‧ cavity
26、56‧‧‧模槽面 26, 56‧‧‧ die groove surface
30‧‧‧脫模膜 30‧‧‧ release film
40‧‧‧密封樹脂 40‧‧‧ sealing resin
58‧‧‧基板設置部 58‧‧‧Substrate setting department
60‧‧‧樹脂導入部 60‧‧‧Resin introduction
62‧‧‧樹脂配置部 62‧‧‧Resin Configuration Department
64‧‧‧塞件 64‧‧‧plugs
圖1係顯示發光二極體一例的剖面圖。 Fig. 1 is a cross-sectional view showing an example of a light-emitting diode.
圖2係顯示發光二極體另一例的剖面圖。 Fig. 2 is a cross-sectional view showing another example of the light emitting diode.
圖3係顯示發光二極體另一例的剖面圖。 Fig. 3 is a cross-sectional view showing another example of the light emitting diode.
圖4係顯示發光二極體另一例的立體圖。 Fig. 4 is a perspective view showing another example of the light emitting diode.
圖5係顯示發光二極體另一例的剖面圖。 Fig. 5 is a cross-sectional view showing another example of the light-emitting diode.
圖6係顯示發光二極體之製造方法中步驟(α1)的剖面圖。 Fig. 6 is a cross-sectional view showing the step (α1) in the method of manufacturing the light-emitting diode.
圖7係顯示發光二極體之製造方法中步驟(α2)的剖面圖。 Fig. 7 is a cross-sectional view showing the step (α2) in the method of manufacturing the light-emitting diode.
圖8係顯示發光二極體之製造方法中步驟(α3)的剖面圖。 Fig. 8 is a cross-sectional view showing the step (α3) in the method of manufacturing the light-emitting diode.
圖9係顯示發光二極體之製造方法中步驟(α4)的剖面圖。 Fig. 9 is a cross-sectional view showing the step (α4) in the method of manufacturing the light-emitting diode.
圖10係顯示發光二極體之製造方法中步驟(α5)的剖面圖。 Fig. 10 is a cross-sectional view showing the step (α5) in the method of manufacturing the light-emitting diode.
圖11係顯示發光二極體之製造方法使用之模具一例的剖面圖。 Fig. 11 is a cross-sectional view showing an example of a mold used in a method of manufacturing a light-emitting diode.
圖12係顯示發光二極體之製造方法中步驟(β1)的剖面圖。 Fig. 12 is a cross-sectional view showing the step (β1) in the method of manufacturing the light-emitting diode.
圖13係顯示發光二極體之製造方法中步驟(β2)的剖面圖。 Figure 13 is a cross-sectional view showing the step (β2) in the method of manufacturing the light-emitting diode.
圖14係顯示發光二極體之製造方法中步驟(β3)的剖面圖。 Fig. 14 is a cross-sectional view showing the step (β3) in the method of manufacturing the light-emitting diode.
圖15係顯示發光二極體之製造方法中步驟(β4)的剖面圖。 Fig. 15 is a cross-sectional view showing the step (β4) in the method of manufacturing the light-emitting diode.
圖16係顯示發光二極體之製造方法中步驟(β5)的剖面圖。 Fig. 16 is a cross-sectional view showing the step (β5) in the method of manufacturing the light-emitting diode.
本發明之脫模膜係配置於模具之模槽面的脫模膜，且該模具係以硬化性密封樹脂將半導體裝置(含發光二極體)之半導體元件(含發光元件)密封而形成樹脂密封部(含透鏡部)者。例如，本發明之脫模膜係一種在形成發光二極體之透鏡部時，以覆蓋具有形狀與該透鏡部形狀相對應之模槽的模具之模槽面的方式來配置，並使其位於所形成之透鏡部與模槽面之間，藉此而提高從製得之發光二極體之模具的脫模性之薄膜。 The release film of the present invention is a release film disposed on a cavity surface of a mold, and the mold is formed by sealing a semiconductor element (including a light-emitting element) of a semiconductor device (including a light-emitting diode) with a curable sealing resin to form a resin. Sealing part (including lens part). For example, the release film of the present invention is disposed such that it covers the cavity surface of the mold having a cavity having a shape corresponding to the shape of the lens portion when forming the lens portion of the light-emitting diode. A film between the formed lens portion and the cavity surface, thereby improving the release property of the mold of the obtained light-emitting diode.
本發明之脫模膜依據JIS K 7127測得之於132℃下之拉伸彈性率為10~24MPa，且以12~20MPa為佳。 The release film of the present invention has a tensile modulus of 10 to 24 MPa at 132 ° C as measured according to JIS K 7127, and preferably 12 to 20 MPa.
使硬化性密封樹脂硬化時的模具溫度通常為100~140℃，而脫模膜在132℃下之拉伸彈性率只要在上述範圍內，則在該模具溫度範圍中脫模膜即可顯示良好的物性。即，於132℃下之拉伸彈性率只要在24MPa以下，脫模膜便可均勻延伸，因此脫模膜厚度難以產生不均。其結果可抑制因脫模膜厚度不均被轉印至樹脂密封部表面所造成的樹脂密封部表面之外觀不良(應變)。於132℃下之拉伸彈性率若在10MPa以上，則一邊將脫模膜拉伸且一邊將之配置成覆蓋模具之模槽時，脫模膜便不會過軟，因此可對脫模膜均勻地賦予張力，且難以產生縐紋。其結果可抑制因脫模膜縐紋被轉印至樹脂密封部表面所造成的樹脂密封部表面之外觀不良。 When the mold temperature at the time of curing the curable sealing resin is usually 100 to 140 ° C, and the tensile modulus at 132 ° C of the release film is within the above range, the release film can be displayed well in the mold temperature range. Physical property. That is, when the tensile modulus at 132 ° C is 24 MPa or less, the release film can be uniformly extended, so that the thickness of the release film is less likely to be uneven. As a result, it is possible to suppress the appearance defect (strain) of the surface of the resin sealing portion caused by the unevenness in the thickness of the release film being transferred to the surface of the resin sealing portion. When the tensile modulus at 132 ° C is 10 MPa or more, the release film is stretched and placed so as to cover the cavity of the mold, the release film is not too soft, so the release film can be applied. Tension is imparted evenly, and it is difficult to produce crepe. As a result, it is possible to suppress the appearance defect of the surface of the resin sealing portion caused by the transfer of the release film crepe to the surface of the resin sealing portion.
具體上，脫模膜在132℃下之拉伸彈性率係針對 將脫模膜削剪成短冊形狀(試驗片型號5)之試驗薄片，在薄片溫度：132℃、拉伸速度：1mm/分之條件下進行拉伸試驗而測定。 Specifically, the tensile modulus of the release film at 132 ° C is The release sheet was cut into a test piece of a short book shape (test piece type 5), and the tensile test was carried out under the conditions of a sheet temperature of 132 ° C and a tensile speed of 1 mm/min.
本發明之脫模膜的拉伸彈性率可藉由調整脫模膜用樹脂之結晶度來進行調整。具體上，脫模膜用樹脂之結晶度愈低，脫模膜的拉伸彈性率即愈低。例如在乙烯/四氟乙烯共聚物(以下表記為ETFE)的情況下，脫模膜用樹脂之結晶度可藉由調整以四氟乙烯(以下表記為TFE)及乙烯(以下表記為E)以外之單體即第3單體為主體之單元的種類或比率來進行調整。 The tensile modulus of the release film of the present invention can be adjusted by adjusting the crystallinity of the resin for the release film. Specifically, the lower the crystallinity of the resin for the release film, the lower the tensile modulus of the release film. For example, in the case of an ethylene/tetrafluoroethylene copolymer (hereinafter referred to as ETFE), the crystallinity of the resin for release film can be adjusted by using tetrafluoroethylene (hereinafter referred to as TFE) and ethylene (hereinafter referred to as E). The monomer, that is, the third monomer is adjusted by the type or ratio of the unit of the main body.
本發明之脫模膜的剝離力最大值在0.8N/25mm以下，且在0.5N/25mm以下為佳。剝離力之最大值只要在0.8N/25mm以下，則實際生產時與已硬化成透鏡型的密封樹脂之剝離便更加容易，因此難以產生脫模膜與已硬化之密封樹脂無法順利分離而造成裝置停止之情況，故連續生產性佳。 The maximum peeling force of the release film of the present invention is 0.8 N/25 mm or less, and preferably 0.5 N/25 mm or less. When the maximum value of the peeling force is 0.8 N/25 mm or less, peeling of the sealing resin which has been hardened into a lens type is actually easier in actual production, and thus it is difficult to cause the release film and the hardened sealing resin to be smoothly separated from each other. The situation of stopping, so continuous production is good.
本發明中之脫模膜的剝離力係依據JIS K 6854-2，而以如以下的方式在脫模膜與已硬化之密封樹脂之180°剝離試驗下測定之剝離力。而，作為硬化性密封樹脂係以熱硬化性聚矽氧樹脂為例作說明。 The peeling force of the release film in the present invention is a peeling force measured under a 180 peel test of the release film and the cured sealing resin in the following manner in accordance with JIS K 6854-2. Further, a thermosetting polyoxymethylene resin is exemplified as the curable sealing resin.
(a)將熱硬化性聚矽氧樹脂適量塗佈至脫模膜與鋁板之間。 (a) A thermosetting polyxanthene resin is applied in an appropriate amount between the release film and the aluminum plate.
(b)在130℃、1MPa下，將包夾熱硬化性聚矽氧樹脂之 脫模膜與鋁板進行5分鐘壓製，使熱硬化性聚矽氧樹脂硬化。並且，調節前述熱硬化性聚矽氧樹脂之塗佈量，以使已硬化之聚矽氧樹脂層厚度成為100μm。 (b) at 130 ° C, 1 MPa, will be sandwiched with thermosetting polyoxyl resin The release film and the aluminum plate were pressed for 5 minutes to harden the thermosetting polyoxymethylene resin. Further, the coating amount of the thermosetting polyoxynoxy resin was adjusted so that the thickness of the cured polyoxynoxy resin layer became 100 μm.
(c)將由脫模膜、已硬化之聚矽氧樹脂層及鋁板所構成之積層板切斷成25mm寬，作成試驗片。 (c) A laminate having a release film, a cured polyoxymethylene resin layer, and an aluminum plate was cut into a width of 25 mm to prepare a test piece.
(d)使用拉伸試驗機，在100mm/分之剝離速度下測定剝離膜相對於試驗片中已硬化之聚矽氧樹脂層在常溫下之180°剝離力。 (d) Using a tensile tester, the 180° peeling force of the peeled film at room temperature with respect to the cured polyoxyxene resin layer in the test piece was measured at a peeling speed of 100 mm/min.
(e)求算在力(N)-抓取移動距離曲線中，抓取移動距離25mm起至125mm之剝離力的最大值(單元為N/25mm)。 (e) Calculate the maximum value of the peeling force (unit: N/25 mm) from the moving distance of 25 mm to 125 mm in the force (N)-grabbing distance curve.
(f)使用5個試驗片來求算各脫模膜之剝離力最大值的算術平均。 (f) Five test pieces were used to calculate the arithmetic mean of the maximum peeling force of each release film.
本發明之脫模膜厚度以16~75μm為佳，且以25~50μm較佳。只要厚度在16μm以上，脫模膜即容易處理，且將脫模膜一邊進行拉伸一邊以覆蓋模具之模槽的方式進行配置時，難以產生縐紋。只要厚度在75μm以下，脫模膜即可輕易地變形且對模具之模槽形狀的追隨性會提升，因此脫模膜可緊實地密著於模槽面，而可穩定形成高品質的樹脂密封部。又，模具之模槽愈大，則本發明之脫模膜厚度在前述範圍內愈薄愈佳。又，愈是具有多數模槽的複雜模具，則在前述範圍內即以愈薄愈佳。 The release film of the present invention preferably has a thickness of 16 to 75 μm and preferably 25 to 50 μm. When the thickness is 16 μm or more, the release film is easy to handle, and when the release film is stretched while covering the cavity of the mold, it is difficult to cause crepe. As long as the thickness is 75 μm or less, the release film can be easily deformed and the followability to the shape of the cavity of the mold is improved, so that the release film can be tightly adhered to the cavity surface, and a high-quality resin seal can be stably formed. unit. Further, the larger the mold groove of the mold, the thinner the thickness of the release film of the present invention in the above range. Moreover, the more complex the mold has a large number of cavities, the thinner the better within the aforementioned range.
本發明之脫模膜表面以平滑為佳。藉由使用表面平滑 的脫模膜，容易形成高品質的樹脂密封部，例如容易製造光學特性優異的發光二極體。而，若令脫模膜之其中一表面為紋面並將該表面作為模具之模槽側使用，便容易真空吸著至模槽，但該薄膜之使用有使樹脂密封部表面產生凹凸之虞，例如在透鏡部的情況下有使透鏡精度降低之虞。 The surface of the release film of the present invention is preferably smooth. By using surface smoothing In the release film, it is easy to form a high-quality resin sealing portion, and for example, it is easy to produce a light-emitting diode having excellent optical characteristics. However, if one of the surfaces of the release film is a textured surface and the surface is used as a cavity side of the mold, it is easy to vacuum suction to the cavity, but the use of the film causes unevenness on the surface of the resin sealing portion. For example, in the case of a lens portion, there is a problem in that the accuracy of the lens is lowered.
本發明之脫模膜表面的10點平均粗度(Rz)在鏡面的情況下以0.01~0.1μm為佳；在紋面表面的情況下以0.15~3.5μm為佳。Rz只要在0.15μm以上，即可促進脫模膜至模槽的真空吸著。又，Rz只要在3.5μm以下，即可抑制在樹脂密封部表面形成凹凸。Rz係依據JIS B 0601進行測定。 The 10-point average roughness (Rz) of the surface of the release film of the present invention is preferably 0.01 to 0.1 μm in the case of a mirror surface, and 0.15 to 3.5 μm in the case of a grain surface. When Rz is 0.15 μm or more, vacuum suction of the release film to the cavity can be promoted. Further, when Rz is 3.5 μm or less, it is possible to suppress the formation of irregularities on the surface of the resin sealing portion. Rz was measured in accordance with JIS B 0601.
針對脫模膜，係要求脫模性、表面平滑性、可承受成形時模具溫度之100~140℃程度的耐熱性及可承受密封樹脂流動或加壓力的強度。作為本發明之脫模膜，從脫模性、耐熱性、強度及高溫下延伸諸點看來，以由選自於由聚烯烴及氟樹脂所構成群組中之1種以上樹脂所構成之薄膜為佳，且以由氟樹脂所構成之薄膜較佳。本發明之脫模膜可為併用氟樹脂與非氟樹脂之薄膜，亦可為摻混有無機添加劑、有機添加劑等之薄膜。 For the release film, it is required to have mold release property, surface smoothness, heat resistance at a temperature of 100 to 140 ° C which can withstand molding temperature at the time of molding, and strength which can withstand the flow or pressure of the sealing resin. The release film of the present invention is composed of one or more resins selected from the group consisting of polyolefin and fluororesin, in view of mold release property, heat resistance, strength, and elongation at high temperatures. A film is preferred, and a film composed of a fluororesin is preferred. The release film of the present invention may be a film of a fluororesin and a non-fluororesin in combination, or a film in which an inorganic additive, an organic additive or the like is blended.
作為聚烯烴，從脫模性及模具追隨性諸點看來，以聚甲基戊烯為佳。聚烯烴可單獨使用1種亦可將2種以上併用。 As the polyolefin, polymethylpentene is preferred from the viewpoints of mold release property and mold followability. One type of the polyolefin may be used alone or two or more types may be used in combination.
作為氟樹脂，可舉如ETFE、聚四氟乙烯及全氟(烷基乙烯基醚)/四氟乙烯共聚物等，從高溫下之延伸大之觀點看 來，以ETFE尤佳。氟樹脂可單獨使用1種亦可將2種以上併用。又，ETFE可單獨使用1種亦可將2種以上併用。 Examples of the fluororesin include ETFE, polytetrafluoroethylene, and perfluoro(alkyl vinyl ether)/tetrafluoroethylene copolymer, and the like, from the viewpoint of a large elongation. Come, especially with ETFE. One type of the fluororesin may be used alone or two or more types may be used in combination. Further, ETFE may be used alone or in combination of two or more.
作為ETFE，從易於調整脫模膜用樹脂之結晶度即脫模膜的拉伸彈性率之觀點看來，以具有以第3單體為主體之單元為佳，而從可以少量進行拉伸彈性率之調整的觀點看來，以具有以TFE為主體之單元、以E為主體之單元及以(全氟丁基)乙烯為主體之單元的共聚物尤佳。 As the ETFE, from the viewpoint of easily adjusting the crystallinity of the resin for the release film, that is, the tensile modulus of the release film, it is preferable to have a unit mainly composed of the third monomer, and to perform tensile elasticity from a small amount. From the viewpoint of the adjustment of the rate, it is particularly preferable to use a copolymer having a unit mainly composed of TFE, a unit mainly composed of E, and a unit mainly composed of (perfluorobutyl)ethylene.
作為第3單體，可舉如具有氟原子之單體及不具氟原子之單體。 The third monomer may, for example, be a monomer having a fluorine atom or a monomer having no fluorine atom.
作為具有氟原子之單體的具體例，可舉如下述單體(a1)~(a5)。 Specific examples of the monomer having a fluorine atom include the following monomers (a1) to (a5).
單體(a1)：碳數3以下之氟烯烴類。 Monomer (a1): a fluoroolefin having a carbon number of 3 or less.
單體(a2)：以X(CF2)nCY=CH2(惟，X、Y分別獨立為氫原子或氟原子，n為2~8之整數)表示之全氟烷基乙烯。 Monomer (a2): a perfluoroalkylethylene represented by X(CF 2 ) n CY=CH 2 (except that X and Y are each independently a hydrogen atom or a fluorine atom, and n is an integer of 2-8).
單體(a3)：氟乙烯基醚類。 Monomer (a3): fluorovinyl ethers.
單體(a4)：含官能基之氟乙烯基醚類。 Monomer (a4): a fluorovinyl ether containing a functional group.
單體(a5)：具有脂肪族環結構之含氟單體。 Monomer (a5): a fluorine-containing monomer having an aliphatic ring structure.
作為單體(a1)，可舉如氟乙烯類(三氟乙烯、偏二氟乙烯、氟化乙烯基、氯三氟乙烯等)及氟丙烯類(六氟丙烯(以下表記為HFP)、2-氫五氟丙烯等)等。 Examples of the monomer (a1) include fluoroethylene (such as trifluoroethylene, vinylidene fluoride, vinyl fluoride, and chlorotrifluoroethylene) and fluoropropylene (hexafluoropropylene (hereinafter referred to as HFP) and 2). - Hydrogen pentafluoropropene, etc.).
作為單體(a2)，以n為2~6之單體為佳，且以2~4之單體較佳。又，以X為氟原子且Y為氫原子之單體即(全氟烷基)乙烯較佳。就具體例而言，可舉如下述者。 As the monomer (a2), a monomer having n of 2 to 6 is preferable, and a monomer of 2 to 4 is preferable. Further, a (perfluoroalkyl)ethylene which is a monomer in which X is a fluorine atom and Y is a hydrogen atom is preferred. Specific examples include the following.
CF3CF2CH=CH2、 CF3CF2CF2CF2CH=CH2((全氟丁基)乙烯。以下表記為PFBE)、CF3CF2CF2CF2CF=CH2、CF2HCF2CF2CF=CH2、及CF2HCF2CF2CF2CF=CH2等。 CF 3 CF 2 CH=CH 2 , CF 3 CF 2 CF 2 CF 2 CH=CH 2 ((perfluorobutyl)ethylene. The following is abbreviated as PFBE), CF 3 CF 2 CF 2 CF 2 CF=CH 2 , CF 2 HCF 2 CF 2 CF=CH 2 , and CF 2 HCF 2 CF 2 CF 2 CF=CH 2 and the like.
作為單體(a3)，可舉如下述者。而，下述中二烯之單體係可環化聚合之單體。 The monomer (a3) can be exemplified below. However, the single system of the diene described below can cyclize the polymerized monomer.
CF2=CFOCF3、CF2=CFOCF2CF3、CF2=CF(CF2)2CF3(全氟(丙基乙烯基醚)。以下表記為PPVE)、CF2=CFOCF2CF(CF3)O(CF2)2CF3、CF2=CFO(CF2)3O(CF2)2CF3、CF2=CFO(CF2CF(CF3)O)2(CF2)2CF3、CF2=CFOCF2CF(CF3)O(CF2)2CF3、CF2=CFOCF2CF=CF2、及CF2=CFO(CF2)2CF=CF2等。 CF 2 =CFOCF 3 , CF 2 =CFOCF 2 CF 3 , CF 2 =CF(CF 2 ) 2 CF 3 (perfluoro(propyl vinyl ether). The following table is PPVE), CF 2 =CFOCF 2 CF(CF 3 ) O(CF 2 ) 2 CF 3 , CF 2 =CFO(CF 2 ) 3 O(CF 2 ) 2 CF 3 , CF 2 =CFO(CF 2 CF(CF 3 )O) 2 (CF 2 ) 2 CF 3 , CF 2 =CFOCF 2 CF(CF 3 )O(CF 2 ) 2 CF 3 , CF 2 =CFOCF 2 CF=CF 2 , and CF 2 =CFO(CF 2 ) 2 CF=CF 2 and the like.
作為單體(a4)，可舉如下述者。 As the monomer (a4), the following may be mentioned.
CF2=CFO(CF2)3CO2CH3、CF2=CFOCF2CF(CF3)O(CF2)3CO2CH3、CF2=CFOCF2CF(CF3)O(CF2)2SO2F等。 CF 2 =CFO(CF 2 ) 3 CO 2 CH 3 , CF 2 =CFOCF 2 CF(CF 3 )O(CF 2 ) 3 CO 2 CH 3 , CF 2 =CFOCF 2 CF(CF 3 )O(CF 2 ) 2 SO 2 F, etc.
作為單體(a5)，可舉如全氟(2,2-二甲基-1,3-二氧雜環戊烯)、2,2,4-三氟-5-三氟甲氧基-1,3-二氧雜環戊烯及全氟(2-亞甲基-4-甲基-1,3-二氧五環烷)等。 The monomer (a5) may, for example, be perfluoro(2,2-dimethyl-1,3-dioxole) or 2,2,4-trifluoro-5-trifluoromethoxy- 1,3-dioxole and perfluoro(2-methylene-4-methyl-1,3-dioxopentane).
作為不具氟原子之單體的具體例，可舉如下述單體(b1)~(b4)。 Specific examples of the monomer having no fluorine atom include the following monomers (b1) to (b4).
單體(b1)：烯烴類。 Monomer (b1): olefins.
單體(b2)：乙烯基酯類。 Monomer (b2): vinyl esters.
單體(b3)：乙烯基醚類。 Monomer (b3): vinyl ethers.
單體(b4)：不飽和酸酐。 Monomer (b4): an unsaturated acid anhydride.
作為單體(b1)，可舉如丙烯、異丁烯等。 Examples of the monomer (b1) include propylene and isobutylene.
作為單體(b2)，可舉如乙酸乙烯酯等。 The monomer (b2) may, for example, be vinyl acetate.
作為單體(b3)，可舉如乙基乙烯基醚、丁基乙烯基醚、環己基乙烯基醚、羥丁基乙烯基醚等。 The monomer (b3) may, for example, be ethyl vinyl ether, butyl vinyl ether, cyclohexyl vinyl ether or hydroxybutyl vinyl ether.
作為單體(b4)，可舉如順丁烯二酸酐、伊康酸酐、甲基順丁烯二酸酐、降冰片烯二酸酐(5-降莰烯-2,3-二羧酸酐)等。 The monomer (b4) may, for example, be maleic anhydride, itaconic anhydride, methyl maleic anhydride or norbornene dianhydride (5-northene-2,3-dicarboxylic anhydride).
第3單體可單獨使用1種亦可將2種以上併用。 The third monomer may be used alone or in combination of two or more.
作為第3單體，從易於進行結晶度調整即拉伸彈性率調整之觀點看來，以單體(a2)、HFP、PPVE及乙酸乙烯酯為佳，以HFP、PPVE、CF3CF2CH=CH2及PFBE較佳，且以PFBE尤佳。 As the third monomer, it is preferable to use monomer (a2), HFP, PPVE, and vinyl acetate from the viewpoint of easy adjustment of crystallinity, that is, tensile modulus adjustment, and HFP, PPVE, CF 3 CF 2 CH. =CH 2 and PFBE are preferred, and PFBE is preferred.
以TFE為主體之重複單元及以E為主體之重複單元的莫耳比(TFE/E)以80/20~40/60為佳，70/30~45/55較佳，且以65/35~50/50尤佳。TFE/E只要在前述範圍內，ETFE之耐熱性及機械物性即佳。 The molar ratio (TFE/E) of the repeating unit mainly composed of TFE and the repeating unit of E is preferably 80/20 to 40/60, 70/30 to 45/55 is preferable, and 65/35 is 65/35. ~50/50 is especially good. As long as TFE/E is within the above range, heat resistance and mechanical properties of ETFE are good.
以第3單體為主體之重複單元的比率在全部重複單元(100莫耳%)中為0.01~20莫耳%為佳，0.10~15莫耳%較佳，且0.20~10莫耳%尤佳。以第3單體為主體之重複單元 的比率只要在前述範圍內，ETFE之耐熱性及機械物性即佳。 The ratio of the repeating unit mainly composed of the third monomer is preferably 0.01 to 20 mol% in all repeating units (100 mol%), preferably 0.10 to 15 mol%, and 0.20 to 10 mol%. good. Repeat unit mainly composed of the third monomer The heat resistance and mechanical properties of ETFE are preferably as long as the ratio is within the above range.
第3單體為PFBE時，以PFBE為主體之重複單元的比率在全部重複單元(100莫耳%)中為5~10莫耳%為佳，且5~7莫耳%尤佳。以PFBE為主體之重複單元的比率只要在前述範圍內，即可將脫模膜在132℃下之拉伸彈性率調整在前述範圍內。 When the third monomer is PFBE, the ratio of the repeating unit mainly composed of PFBE is preferably 5 to 10 mol% in all repeating units (100 mol%), and particularly preferably 5 to 7 mol%. When the ratio of the repeating unit mainly composed of PFBE is within the above range, the tensile modulus of the release film at 132 ° C can be adjusted within the above range.
而，一旦增加以PFBE為主體之重複單元的比率，即會有下述問題：(i)薄膜變得過軟而難以處理；(ii)寡聚物變得過多而使薄膜製造輥件容易變髒；(iii)耐熱性低，難以作為脫模膜使用等問題；因此，在習知之脫模膜用ETFE中，未曾將以PFBE為主體之重複單元設在5莫耳%以上。即，在習知之脫模膜用ETFE中未曾將於132℃下之拉伸彈性率設在24MPa以下。 However, once the ratio of repeating units mainly composed of PFBE is increased, there are problems in that (i) the film becomes too soft to be handled; and (ii) the oligomer becomes excessive and the roll of the film is easily changed. (iii) The problem that the heat resistance is low and it is difficult to use it as a release film; therefore, in the conventional ETFE for release film, the repeating unit mainly composed of PFBE has not been set at 5 mol% or more. That is, in the conventional ETFE for release film, the tensile modulus at 132 ° C has not been set to 24 MPa or less.
ETFE之熔融流量(MFR)以2~40g/10分為佳，以5~30g/10分較佳，且以10~20g/10分尤佳。ETFE之MFR只要在前述範圍內，ETFE之成形性便會提升，且脫模膜之機械特性會提升。 The melt flow rate (MFR) of ETFE is preferably 2 to 40 g/10, preferably 5 to 30 g/10 minutes, and preferably 10 to 20 g/10 minutes. As long as the MFR of the ETFE is within the above range, the formability of the ETFE is improved, and the mechanical properties of the release film are improved.
ETFE之MFR係依據ASTM D3159，使用5kg負荷在297℃下測定之值。 The MFR of ETFE is a value measured at 297 ° C using a 5 kg load in accordance with ASTM D3159.
本發明之脫模膜例如可使用脫模膜用樹脂，藉由具備具預定模嘴寬之T型模具的擠壓機進行熔融成形等來製造。 The release film of the present invention can be produced, for example, by melt-molding or the like using an extruder having a T-die having a predetermined die width, using a resin for a release film.
由於在以上說明之本發明之脫模膜中，在132℃下之拉 伸彈性率為10~24MPa，因此可不使脫模膜產生縐紋而將脫模膜均勻地拉伸。所以，一邊將脫模膜以大面積進行拉伸，一邊將之配置成覆蓋模具之模槽、或者使脫模膜追隨於大面積或複雜結構的模槽面時，難以在脫模膜厚度產生不均。其結果可抑制因脫模膜厚度的不均被轉印至樹脂密封部表面而呈現的樹脂密封部表面應變。樹脂密封部只要是發光二極體的透鏡部，即可穩定製造具有良好的透鏡部且展現優異的光學特性之發光二極體。 Since the release film of the present invention described above is pulled at 132 ° C Since the modulus of elasticity is 10 to 24 MPa, the release film can be uniformly stretched without causing crepe of the release film. Therefore, when the release film is stretched over a large area, and it is placed so as to cover the cavity of the mold, or the release film follows the cavity surface of a large-area or complicated structure, it is difficult to produce the thickness of the release film. Uneven. As a result, it is possible to suppress the surface strain of the resin sealing portion which is caused by the unevenness in the thickness of the release film being transferred to the surface of the resin sealing portion. As long as the resin sealing portion is a lens portion of the light-emitting diode, it is possible to stably manufacture a light-emitting diode having a good lens portion and exhibiting excellent optical characteristics.
作為藉由後述本發明半導體裝置的製造方法而製造的半導體裝置，可舉如將電晶體、二極體等半導體元件積體而成之積體電路；及具有發光元件之發光二極體等。 The semiconductor device manufactured by the method for manufacturing a semiconductor device of the present invention to be described later may be an integrated circuit in which semiconductor elements such as a transistor or a diode are integrated, and a light-emitting diode having a light-emitting element.
以下，作為半導體裝置一例，將就發光二極體進行說明。 Hereinafter, a light-emitting diode will be described as an example of a semiconductor device.
發光二極體例如係具有基板、安裝在基板上之發光元件、及將發光元件密封之透鏡部。 The light-emitting diode has, for example, a substrate, a light-emitting element mounted on the substrate, and a lens portion that seals the light-emitting element.
令發光二極體為白色發光二極體時，係在以使螢光體分散之樹脂將發光元件封入之狀態下，以密封樹脂將其周圍密封而形成透鏡部。 When the light-emitting diode is a white light-emitting diode, the lens portion is sealed with a sealing resin in a state in which the light-emitting element is sealed by a resin in which the phosphor is dispersed.
透鏡部露出在外側之部分的面積(以下表記為表面積)在56mm2以上為佳。即便是在使用習知之脫模膜當中容易於透鏡部表面產生應變之表面積在56mm2以上的透鏡部，藉由使用本發明之脫模膜，便難以在透鏡部表面產生 應變。透鏡部的表面積以56~628mm2較佳，且以56~353mm2尤佳。 The area of the portion where the lens portion is exposed to the outside (hereinafter referred to as the surface area) is preferably 56 mm 2 or more. Even in a lens portion having a surface area of 56 mm 2 or more which is easily strained on the surface of the lens portion by using a conventional release film, it is difficult to cause strain on the surface of the lens portion by using the release film of the present invention. To the surface area of the lens portion preferably 56 ~ 628mm 2, and at 56 ~ 353mm 2 plus.
就透鏡部的形狀而言，可舉如：略半球型；砲彈型，由圓柱形狀之樹脂密封部及其上之略半球形狀的透鏡部所構成者；菲涅耳透鏡型；魚糕型，即在軸方向將圓柱予以二等分之形狀；及略半球透鏡陣列型，即複數個略半球形狀的透鏡部連續排列成一體。 The shape of the lens portion may be a slightly hemispherical shape or a cannonball type, which is composed of a cylindrical resin sealing portion and a slightly hemispherical lens portion thereon; a Fresnel lens type; a fish cake type, That is, the cylinder is halved in the axial direction; and a slightly hemispherical lens array type, that is, a plurality of lens portions having a slightly hemispherical shape are continuously arranged in one body.
圖1係顯示發光二極體一例的剖面圖。 Fig. 1 is a cross-sectional view showing an example of a light-emitting diode.
發光二極體1具有基板10、安裝在基板10上的發光元件12、及將發光元件12密封的略半球型透鏡部14。 The light-emitting diode 1 has a substrate 10, a light-emitting element 12 mounted on the substrate 10, and a slightly hemispherical lens portion 14 that seals the light-emitting element 12.
圖2係顯示發光二極體另一例的剖面圖。 Fig. 2 is a cross-sectional view showing another example of the light emitting diode.
發光二極體1具有基板10、安裝在基板10上的發光元件12、及將發光元件12密封的砲彈型透鏡部14。 The light-emitting diode 1 has a substrate 10, a light-emitting element 12 mounted on the substrate 10, and a bullet-type lens portion 14 that seals the light-emitting element 12.
圖3係顯示發光二極體另一例的剖面圖。 Fig. 3 is a cross-sectional view showing another example of the light emitting diode.
發光二極體1具有基板10、安裝在基板10上的發光元件12、及將發光元件12密封的菲涅耳透鏡型透鏡部14。 The light-emitting diode 1 has a substrate 10, a light-emitting element 12 mounted on the substrate 10, and a Fresnel lens type lens portion 14 that seals the light-emitting element 12.
圖4係顯示發光二極體另一例的立體圖。 Fig. 4 is a perspective view showing another example of the light emitting diode.
發光二極體1具有基板10、安裝在基板10上的發光元件12、及將發光元件12密封的半圓柱型透鏡部14。 The light-emitting diode 1 has a substrate 10, a light-emitting element 12 mounted on the substrate 10, and a semi-cylindrical lens portion 14 that seals the light-emitting element 12.
圖5係顯示發光二極體另一例的立體圖。 Fig. 5 is a perspective view showing another example of the light emitting diode.
發光二極體1具有基板10、安裝在基板10上的複數個發光元件12、及將複數個發光元件12集結密封的略半球透鏡陣列型透鏡部14。 The light-emitting diode 1 has a substrate 10, a plurality of light-emitting elements 12 mounted on the substrate 10, and a slightly hemispherical lens array type lens portion 14 that collects and seals a plurality of light-emitting elements 12.
就硬化性密封樹脂而言，可舉如熱硬化性樹脂或光硬化性樹脂等，在模具內硬化而硬化成的樹脂。硬化性密封樹脂具有流動性，故成形時會追隨模具之模槽內面形狀並以其狀態硬化而成為成形物。硬化性密封樹脂可使用通常在常溫下具有流動性者，亦可為被充填至模具時經加熱而流動化且在常溫下為固體之樹脂。此外，亦可以固體狀態(例如粉末狀態)充填至模具，並在模具內經加熱而暫時成為流動狀態後再硬化之樹脂。而，硬化性密封樹脂亦可含有添加劑等之隨意成分。例如，亦可摻混有充填劑或顏料等之固體粉末。 The curable sealing resin may be a resin that is cured and cured in a mold, such as a thermosetting resin or a photocurable resin. Since the curable sealing resin has fluidity, it follows the shape of the inner surface of the cavity of the mold and is hardened in the state to form a molded product. The curable sealing resin can be a resin which is usually fluid at normal temperature, or a resin which is heated and fluidized when it is filled into a mold and which is solid at normal temperature. Further, it is also possible to fill the mold in a solid state (for example, a powder state), and to heat the resin in the mold to temporarily become a fluid state and then harden the resin. Further, the curable sealing resin may contain optional components such as additives. For example, a solid powder such as a filler or a pigment may be blended.
作為硬化性密封樹脂，以熱硬化性樹脂為佳。作為熱硬化性樹脂，以硬化時不會副產生低分子量物之類型的熱硬化性樹脂為佳。具體上可舉如：在矽氫加成反應下硬化之熱硬化性聚矽氧樹脂、環氧樹脂、及具有2以上聚合性不飽和基之交聯硬化性化合物(具有2以上丙烯醯氧基之化合物等)。例如可舉：由具有乙烯基之有機聚矽氧烷與具有鍵結於矽原子之氫原子的有機聚矽氧烷之組合所構成的熱硬化性聚矽氧樹脂；由聚環氧化物所構成之基本樹脂與硬化劑亦或交聯劑之組合所構成的環氧樹脂；及由具有2以上丙烯醯氧基之化合物與自由基生成劑之組合所構成的熱硬化性丙烯酸樹脂等。具體而言，例如作為熱硬化性聚矽氧樹脂之市售品，可舉信越化學工業公司製之LPS-3412AJ、LPS-3412B等；作為環氧樹脂之市售品則可舉日本化藥公司製之SEJ-01R等。 As the curable sealing resin, a thermosetting resin is preferred. As the thermosetting resin, a thermosetting resin of a type which does not cause a low molecular weight substance to be produced by the curing is preferable. Specific examples thereof include a thermosetting polyxanthene resin which is cured by a hydroquinone addition reaction, an epoxy resin, and a cross-linking curable compound having two or more polymerizable unsaturated groups (having 2 or more acryloxy groups) Compounds, etc.). For example, a thermosetting polyxanthene resin composed of a combination of an organic polysiloxane having a vinyl group and an organic polyoxyalkylene having a hydrogen atom bonded to a halogen atom; and a polyepoxide An epoxy resin comprising a combination of a base resin, a curing agent or a crosslinking agent; and a thermosetting acrylic resin comprising a combination of a compound having 2 or more acryloxy groups and a radical generating agent. Specifically, for example, LPS-3412AJ, LPS-3412B, etc., manufactured by Shin-Etsu Chemical Co., Ltd., may be used as a commercial product of a thermosetting polyxanthene resin, and a Japanese chemical company may be mentioned as a commercial product of an epoxy resin. SEJ-01R and so on.
本發明半導體裝置的製造方法特徵在於：在使用模具將半導體元件以硬化性密封樹脂密封來製造半導體裝置之方法中係使用本發明之脫模膜。作為本發明半導體裝置的製造方法，除了使用本發明之脫模膜以外，可採用公知的製造方法。就樹脂密封部之形成方法而言，可舉壓縮成形法或轉印成形法。就裝置而言，可使用公知的壓縮成形裝置或轉印成形裝置。製造條件亦設成與公知半導體裝置的製造方法之條件相同的條件即可。 The method for producing a semiconductor device of the present invention is characterized in that the release film of the present invention is used in a method of manufacturing a semiconductor device by sealing a semiconductor element with a curable sealing resin using a mold. As a method of producing the semiconductor device of the present invention, a known production method can be employed in addition to the release film of the present invention. The method of forming the resin sealing portion may be a compression molding method or a transfer molding method. As the device, a known compression molding device or transfer molding device can be used. The manufacturing conditions may be set to the same conditions as those of the known semiconductor device manufacturing method.
作為使硬化性密封樹脂在模具之模槽內硬化而形成由已硬化之密封樹脂所構成之樹脂密封部的方法，以壓縮成形法及轉印成形法為佳。在該等成形法中，模具溫度-即令密封樹脂硬化時之模具內面溫度-會依密封樹脂種類而不同，但通常在100~140℃。有時，依密封樹脂種類可能需要更高的模具溫度，又可能會依密封樹脂硬化時的發熱而使模具溫度上升。本發明之脫模膜可在模具溫度達185℃為止之情況下充分使用。 The method of forming the resin sealing portion composed of the cured sealing resin by curing the curable sealing resin in the cavity of the mold is preferably a compression molding method or a transfer molding method. In the molding methods, the mold temperature, that is, the temperature of the inner surface of the mold when the sealing resin is cured, varies depending on the type of the sealing resin, but is usually from 100 to 140 °C. In some cases, depending on the type of sealing resin, a higher mold temperature may be required, and the mold temperature may rise depending on the heat generated when the sealing resin is hardened. The release film of the present invention can be sufficiently used in the case where the mold temperature reaches 185 °C.
本發明之脫模膜係配置於模具與密封樹脂相接觸之模槽面。已充填於模槽的密封樹脂係隔著脫模膜與模具內面接觸，並在與其模具相接觸之狀態下密封樹脂會硬化而成為硬化樹脂。密封樹脂硬化後，從模具取出具有由已硬化之密封樹脂所構成之樹脂密封部的半導體裝置。 The release film of the present invention is disposed on a cavity surface of the mold that is in contact with the sealing resin. The sealing resin which has been filled in the cavity is in contact with the inner surface of the mold via the release film, and the sealing resin is hardened to become a hardened resin in a state of being in contact with the mold. After the sealing resin is cured, a semiconductor device having a resin sealing portion made of a cured sealing resin is taken out from the mold.
作為本發明之半導體裝置的製造方法，較具體而言，依照密封樹脂的充填時序可舉下述方法(α)及方法(β)2 種。下述方法(α)係壓縮成形法之一例，而下述方法(β)係轉印成形法之一例。 As a method of manufacturing the semiconductor device of the present invention, specifically, according to the filling timing of the sealing resin, the following methods (α) and methods (β) 2 are exemplified. Kind. The following method (α) is an example of a compression molding method, and the following method (β) is an example of a transfer molding method.
方法(α)：具有下述步驟(α1)~(α5)之方法。 Method (α): A method having the following steps (α1) to (α5).
步驟(α1)，係以覆蓋模具之模槽的方式，配置本發明之脫模膜。 In the step (α1), the release film of the present invention is disposed so as to cover the cavity of the mold.
步驟(α2)，將脫模膜真空抽吸至模具之模槽面側。 In the step (α2), the release film is vacuum-drawn to the side of the cavity of the mold.
步驟(α3)，將密封樹脂充填於模槽內。 In the step (α3), the sealing resin is filled in the cavity.
步驟(α4)，將半導體元件配置在模槽內之預定位置上，並藉由密封樹脂將半導體元件密封來形成樹脂密封部，進而製得半導體裝置。 In the step (α4), the semiconductor element is placed at a predetermined position in the cavity, and the semiconductor element is sealed by a sealing resin to form a resin sealing portion, thereby producing a semiconductor device.
步驟(α5)，自模具內取出半導體裝置。 In the step (α5), the semiconductor device is taken out from the mold.
方法(β)：具有下述步驟(β1)~(β5)之方法。 Method (β): A method having the following steps (β1) to (β5).
步驟(β1)，以覆蓋模具之模槽的方式配置本發明之脫模膜。 In the step (β1), the release film of the present invention is disposed so as to cover the cavity of the mold.
步驟(β2)，將脫模膜真空抽吸至模具之模槽面側。 In the step (β2), the release film is vacuum-drawn to the side of the cavity of the mold.
步驟(β3)，將半導體元件配置於模槽內之預定位置。 In step (β3), the semiconductor element is placed at a predetermined position in the cavity.
步驟(β4)，將密封樹脂充填於模槽內，並藉由該密封樹脂將半導體元件密封而形成樹脂密封部，進而製得半導體裝置。 In the step (β4), the sealing resin is filled in the cavity, and the semiconductor element is sealed by the sealing resin to form a resin sealing portion, thereby producing a semiconductor device.
步驟(β5)，自模具內取出半導體裝置。 Step (β5), the semiconductor device is taken out from the mold.
以下作為半導體裝置的製造方法一例，將就發光二極體之製造方法加以說明。 Hereinafter, a method of manufacturing a light-emitting diode will be described as an example of a method of manufacturing a semiconductor device.
作為發光二極體之製造方法中方法(α)之一例，將就藉由壓縮成形法來製造發光二極體之情況詳細說明。壓縮成形法係如日本特開2005-305954號公報所記載，可一次大量生產複數個發光二極體之製造方法。 As an example of the method (α) in the method for producing a light-emitting diode, a case where the light-emitting diode is manufactured by a compression molding method will be described in detail. The compression molding method is described in Japanese Laid-Open Patent Publication No. 2005-305954, and a plurality of methods for producing a plurality of light-emitting diodes can be mass-produced at a time.
如圖6顯示，壓縮成形法中使用之模具具有上模20、中模(圖示省略)及下模22。於上模20形成有吸著基板10之真空通氣孔(圖示省略)，可使已搭載發光元件12之基板10吸著於上模20。於下模22形成有形狀與發光二極體1之透鏡部14之形狀相對應的模槽24。又，於下模22形成有真空通氣孔(圖示省略)，其係藉由將脫模膜30與下模22間的空氣抽吸而用以將脫模膜30吸著於下模22者。 As shown in Fig. 6, the mold used in the compression molding method has an upper mold 20, a middle mold (not shown), and a lower mold 22. A vacuum vent (not shown) for absorbing the substrate 10 is formed in the upper mold 20, and the substrate 10 on which the light-emitting element 12 is mounted can be sucked on the upper mold 20. A cavity 24 having a shape corresponding to the shape of the lens portion 14 of the light-emitting diode 1 is formed in the lower mold 22. Further, a vacuum vent hole (not shown) is formed in the lower mold 22, which is used to suck the release film 30 to the lower mold 22 by sucking air between the release film 30 and the lower mold 22. .
從易於形成高品質的透鏡部14且容易製得光學特性優異的發光二極體1之觀點看來，下模22之模槽面26以平滑為宜。若將模槽面26製成紋面，雖可較有效率地將脫模膜30真空吸著於模槽面26，但有製得之發光二極體1的透鏡部14表面會產生凹凸而使透鏡精度惡化之虞。 From the viewpoint of easily forming the high-quality lens portion 14 and easily producing the light-emitting diode 1 excellent in optical characteristics, the cavity surface 26 of the lower mold 22 is preferably smooth. When the cavity surface 26 is formed into a groove surface, the release film 30 can be vacuum-absorbed to the cavity surface 26 more efficiently, but the surface of the lens portion 14 of the obtained light-emitting diode 1 is uneven. Deteriorating the accuracy of the lens.
如圖6顯示，以覆蓋下模22之模槽24的方式來配置脫模膜30。脫模膜30係從捲出輥(圖示省略)送出，並被捲取輥(圖示省略)捲取。由於脫模膜30會被捲出輥及捲取輥拉伸，因此其係在被延展拉伸之狀態下以覆蓋下模22之模槽24的方式配置。 As shown in FIG. 6, the release film 30 is disposed so as to cover the cavity 24 of the lower mold 22. The release film 30 is sent out from a take-up roll (not shown) and taken up by a take-up roll (not shown). Since the release film 30 is stretched by the take-up roll and the take-up roll, it is disposed so as to cover the cavity 24 of the lower mold 22 while being stretched and stretched.
如圖7顯示，透過下模22之形成於模槽24外部的真空通 氣孔(圖示省略)進行真空抽吸，將脫模膜30與模槽面26間之空間減壓，使脫模膜30延展拉伸而變形，進而使其真空吸著至下模22之模槽面26。此外，壓緊配置在下模22周緣的框狀之中模(圖示省略)，將脫模膜30往全部方向進行拉伸並使其成緊張狀態。 As shown in FIG. 7, the vacuum through the lower mold 22 formed outside the cavity 24 is shown. The air holes (not shown) are evacuated, and the space between the release film 30 and the cavity surface 26 is depressurized, and the release film 30 is stretched and deformed, and vacuum-adsorbed to the mold of the lower mold 22. Groove surface 26. Further, the frame-shaped intermediate mold (not shown) disposed on the periphery of the lower mold 22 is pressed, and the release film 30 is stretched in all directions to be in a state of tension.
而，依照高溫環境下之脫模膜30的強度、厚度及模槽24的形狀，脫模膜30未必會密著於模槽面26。如圖7顯示，在步驟(α2)的真空吸著階段中，脫模膜30與模槽面26間可能會殘存些許的空隙。 Further, the release film 30 is not necessarily adhered to the cavity surface 26 in accordance with the strength and thickness of the release film 30 in a high temperature environment and the shape of the cavity 24. As shown in Fig. 7, in the vacuum suction phase of the step (α2), a slight gap may remain between the release film 30 and the cavity surface 26.
如圖8顯示，藉由灑佈器(圖示省略)將硬化性密封樹脂40適量充填於模槽24內之脫模膜30上。 As shown in Fig. 8, the curable sealing resin 40 is filled in an appropriate amount on the release film 30 in the cavity 24 by a spreader (not shown).
作為密封樹脂40，通常係使用會成為透明硬化樹脂的硬化性樹脂。而，在光擴散性之目的下，亦可使用會成為乳白色的透明硬化樹脂且含有添加劑等的硬化性樹脂。 As the sealing resin 40, a curable resin which is a transparent curing resin is usually used. Further, for the purpose of light diffusibility, a curable resin containing a transparent white curable resin and containing an additive or the like may be used.
如圖9顯示，將已將密封樹脂40充填於模槽24內之脫模膜30上的下模22、及已吸著搭載有發光元件12之基板10的上模20合模，並將模具加熱使密封樹脂40硬化作為硬化樹脂，進而形成將發光元件12密封的透鏡部14。 As shown in FIG. 9, the lower mold 22 in which the sealing resin 40 is filled in the release film 30 in the cavity 24, and the upper mold 20 on which the substrate 10 on which the light-emitting element 12 is mounted are clamped, and the mold is clamped. Heating causes the sealing resin 40 to be cured as a hardening resin, thereby forming a lens portion 14 that seals the light-emitting element 12.
在步驟(α4)中，已充填於模槽24內的密封樹脂40係藉由合模壓力進一步被壓入模槽24，並因脫模膜30被延展拉伸且變形而密著於模槽面26。所以，可形成形狀與模槽24形狀相對應的透鏡部14。 In the step (α4), the sealing resin 40 which has been filled in the cavity 24 is further pressed into the cavity 24 by the mold clamping pressure, and is adhered to the cavity by the release film 30 being stretched and deformed. Face 26. Therefore, the lens portion 14 having a shape corresponding to the shape of the cavity 24 can be formed.
模具溫度即令模具內之密封樹脂40硬化的溫度以100~185℃為佳，且以100~140℃較佳。模具溫度只要在100℃以上，發光二極體1之生產性便會提升。模具溫度只要在185℃以下，即可抑制密封樹脂40硬化時的劣化。又，為了更可抑制從模具取出密封樹脂40之硬化物時模具內外因溫度差造成熱收縮所引起的透鏡部14之形狀變化，並在特別要求發光二極體1之保護的情況下，模具溫度在140℃以下為佳。 The mold temperature is preferably a temperature at which the sealing resin 40 in the mold is cured at 100 to 185 ° C, and preferably 100 to 140 ° C. As long as the mold temperature is above 100 ° C, the productivity of the light-emitting diode 1 is improved. When the mold temperature is 185 ° C or lower, deterioration of the sealing resin 40 at the time of curing can be suppressed. Further, in order to further suppress the change in the shape of the lens portion 14 caused by the thermal contraction between the inside and the outside of the mold when the cured product of the sealing resin 40 is taken out from the mold, and in particular, the protection of the light-emitting diode 1 is required, the mold is The temperature is preferably below 140 °C.
合模時的脫模膜30厚度在75μm以下為佳。厚度只要在75μm以下，對模槽面26的追隨性即充分，而容易形成均勻形狀的透鏡部14。 The thickness of the release film 30 at the time of mold clamping is preferably 75 μm or less. When the thickness is 75 μm or less, the followability to the cavity surface 26 is sufficient, and the lens portion 14 having a uniform shape is easily formed.
如圖10顯示，將上模20與下模22分模並取出發光二極體1。剝離力之最大值若在0.8N/25mm以下，即可輕易地從模具將發光二極體1脫模。進行脫模的同時，將脫模膜30之使用完畢部分送至捲取輥(圖示省略)，並將脫模膜30之未使用部分從捲出輥(圖示省略)送出。 As shown in FIG. 10, the upper mold 20 and the lower mold 22 are divided and the light-emitting diode 1 is taken out. If the maximum value of the peeling force is 0.8 N/25 mm or less, the light-emitting diode 1 can be easily released from the mold. At the same time as demolding, the used portion of the release film 30 is sent to a take-up roll (not shown), and the unused portion of the release film 30 is sent out from the take-up roll (not shown).
從捲出輥往捲取輥搬送時，脫模膜30厚度在16μm以上為佳。厚度若低於16μm，則在脫模膜30搬送時便容易產生縐紋。脫模膜30一旦有縐紋，縐紋便會被轉印至透鏡部14而成為不良製品。厚度只要在16μm以上，便可對脫模膜30充分地施加張力，藉此可抑制縐紋的產生。 When the take-up roll is conveyed to the take-up roll, the thickness of the release film 30 is preferably 16 μm or more. When the thickness is less than 16 μm, crepe is likely to occur when the release film 30 is conveyed. When the release film 30 has a crepe, the crepe is transferred to the lens portion 14 to become a defective product. When the thickness is 16 μm or more, the release film 30 can be sufficiently applied with tension, whereby generation of crepe can be suppressed.
從捲出輥往捲取輥搬送時，脫模膜30在132℃下之拉伸彈性率在10MPa以上為佳。於132℃下之拉伸彈性率 若低於10MPa，脫模膜30便會非常柔軟而無法均勻地對脫模膜30加諸張力，進而容易在脫模膜30搬送時產生縐紋。脫模膜30一旦有縐紋，縐紋便會被轉印至透鏡部14而成為不良製品。於132℃下之拉伸彈性率只要在10MPa以上，便可充分地對脫模膜30加諸張力，藉此可抑制縐紋的產生。 When the take-up roll is conveyed to the take-up roll, the release modulus of the release film 30 at 132 ° C is preferably 10 MPa or more. Tensile modulus at 132 ° C When the pressure is less than 10 MPa, the release film 30 is very soft, and it is not possible to uniformly apply tension to the release film 30, and it is easy to cause crepe when the release film 30 is conveyed. When the release film 30 has a crepe, the crepe is transferred to the lens portion 14 to become a defective product. When the tensile modulus at 132 ° C is 10 MPa or more, the release film 30 can be sufficiently tensioned, whereby generation of crepe can be suppressed.
作為發光二極體之製造方法中方法(β)之一例，將就藉由轉印成形法來製造發光二極體之情況詳細說明。轉印成形法係發光二極體製造時經常使用的方法。 As an example of the method (β) in the method for producing a light-emitting diode, a case where the light-emitting diode is manufactured by a transfer molding method will be described in detail. The transfer molding method is a method often used in the production of a light-emitting diode.
如圖11顯示，轉印成形法中使用的模具具有上模50及下模52。於上模50形成有模槽54，其形狀係與發光二極體1之透鏡部14的形狀相對應；及凹狀的樹脂導入部60，用以將硬化性密封樹脂40引導至模槽54。於下模52形成有基板設置部58，用以設置搭載有發光元件12之基板10；及樹脂配置部62，用以配置密封樹脂40。又，樹脂配置部62內設置有塞件64，用以將密封樹脂40往上模50之樹脂導入部60擠出。 As shown in Fig. 11, the mold used in the transfer molding method has an upper mold 50 and a lower mold 52. A mold groove 54 is formed in the upper mold 50 in a shape corresponding to the shape of the lens portion 14 of the light-emitting diode 1; and a concave resin introduction portion 60 for guiding the hardenable sealing resin 40 to the cavity 54 . A substrate mounting portion 58 for arranging the substrate 10 on which the light-emitting elements 12 are mounted and a resin arranging portion 62 for arranging the sealing resin 40 are formed in the lower mold 52. Further, a plug 64 is provided in the resin disposing portion 62 for extruding the sealing resin 40 to the resin introduction portion 60 of the upper mold 50.
從易於形成高品質的透鏡部14且容易製得光學特性優異的發光二極體1之觀點看來，上模50之模槽面56以平滑為宜。若將模槽面56製成紋面，雖可較有效率地將脫模膜30真空吸著於模槽面56，但有製得之發光二極體1的透鏡部14表面產生凹凸而使透鏡精度惡化之虞。 The cavity surface 56 of the upper mold 50 is preferably smooth from the viewpoint of easily forming the high-quality lens portion 14 and easily producing the light-emitting diode 1 having excellent optical characteristics. When the cavity surface 56 is formed into a groove surface, the release film 30 can be vacuum-absorbed to the cavity surface 56 more efficiently, but the surface of the lens portion 14 of the obtained light-emitting diode 1 is uneven. The lens accuracy deteriorates.
如圖12顯示，以覆蓋上模50之模槽54的方式來配置脫 模膜30。宜以覆蓋模槽54及樹脂導入部60整體的方式來配置脫模膜30。由於脫模膜30會被捲出輥(圖示省略)及捲取輥(圖示省略)拉伸，因此其係在被延展拉伸的狀態下以覆蓋上模50之模槽54的方式配置。 As shown in FIG. 12, the configuration is such that the cavity 54 of the upper mold 50 is covered. The film 30. The release film 30 is preferably disposed so as to cover the entire mold cavity 54 and the resin introduction portion 60. Since the release film 30 is stretched by a take-up roll (not shown) and a take-up roll (not shown), it is disposed so as to cover the cavity 54 of the upper mold 50 while being stretched and stretched. .
如圖13顯示，透過上模50中形成於模槽54外部的溝(圖示省略)進行真空抽吸，將脫模膜30與模槽面56間之空間及脫模膜30與樹脂導入部60之內壁間的空間減壓，使脫模膜30延展拉伸而變形，並將之真空吸著至上模50之模槽面56。 As shown in FIG. 13, vacuum suction is performed through a groove (not shown) formed in the outer periphery of the cavity 54, and the space between the release film 30 and the cavity surface 56, and the release film 30 and the resin introduction portion are shown. The space between the inner walls of 60 is decompressed, the release film 30 is stretched and deformed, and is vacuum-sucked to the cavity surface 56 of the upper mold 50.
而，依照高溫環境下之脫模膜30的強度、厚度或模槽54的形狀，脫模膜30未必會密著於模槽面56。如圖13顯示，在步驟(β2)的真空吸著階段中，脫模膜30與模槽面56間亦可能會殘存些許的空隙。 Further, the release film 30 is not necessarily adhered to the cavity surface 56 in accordance with the strength and thickness of the release film 30 in a high temperature environment or the shape of the cavity 54. As shown in Fig. 13, in the vacuum suction phase of the step (β2), a slight gap may remain between the release film 30 and the cavity surface 56.
如圖14顯示，將安裝有發光元件12之基板10設置於基板設置部58，又於樹脂配置部62之塞件64上配置硬化性密封樹脂40。其後，將上模50與下模52合模，並將發光元件12配置於模槽54內之預定位置。 As shown in FIG. 14, the substrate 10 on which the light-emitting elements 12 are mounted is placed in the substrate installation portion 58, and the curable sealing resin 40 is placed on the plug 64 of the resin arrangement portion 62. Thereafter, the upper mold 50 and the lower mold 52 are clamped, and the light-emitting element 12 is placed at a predetermined position in the cavity 54.
作為硬化性密封樹脂40，可舉與方法(α)中所用之密封樹脂40相同者。 The curable sealing resin 40 is the same as the sealing resin 40 used in the method (α).
如圖15顯示，將下模52之塞件64推起，透過樹脂導入部60將密封樹脂40充填至模槽54內。接下來，將模具加熱，使密封樹脂40硬化而形成將發光元件12密封的透鏡部14。 As shown in Fig. 15, the plug 64 of the lower mold 52 is pushed up, and the sealing resin 40 is filled into the cavity 54 through the resin introduction portion 60. Next, the mold is heated to cure the sealing resin 40 to form the lens portion 14 that seals the light-emitting element 12.
在步驟(β4)中，將密封樹脂40充填至模槽54內，藉此以樹脂壓力進一步將脫模膜30壓入至模槽面56側並延展拉伸且變形，而密著於模槽面56。所以，可形成形狀與模槽54之形狀相對應的透鏡部14。 In the step (β4), the sealing resin 40 is filled into the cavity 54, whereby the release film 30 is further pressed to the side of the cavity face 56 by the resin pressure, and stretched and deformed, and adhered to the cavity. Face 56. Therefore, the lens portion 14 having a shape corresponding to the shape of the cavity 54 can be formed.
模具溫度即令密封樹脂40硬化之溫度宜設在與方法(α)中之溫度範圍相同的範圍。 The mold temperature, that is, the temperature at which the sealing resin 40 is hardened is preferably set in the same range as the temperature range in the method (α).
密封樹脂40充填時的樹脂壓以2~30MPa為佳，且以3~10MPa較佳。樹脂壓只要在2MPa以上，便難以產生密封樹脂40之充填不足等缺點。樹脂壓只要在30MPa以下，即易於製得良好品質的發光二極體1。密封樹脂40之樹脂壓可藉由塞件646調整。 The resin pressure at the time of filling the sealing resin 40 is preferably 2 to 30 MPa, and more preferably 3 to 10 MPa. When the resin pressure is 2 MPa or more, it is difficult to cause defects such as insufficient filling of the sealing resin 40. When the resin pressure is 30 MPa or less, it is easy to obtain the light-emitting diode 1 of good quality. The resin pressure of the sealing resin 40 can be adjusted by the plug 646.
如圖16顯示，從模具取出為附著有硬化物16之狀態的發光二極體1並將硬化物16切除，而該硬化物16係在樹脂導入部60內密封樹脂40硬化而成者。 As shown in FIG. 16, the light-emitting diode 1 in a state in which the cured product 16 is adhered is taken out from the mold, and the cured product 16 is cut off, and the cured product 16 is obtained by curing the sealing resin 40 in the resin introduction portion 60.
在透鏡部14形成後之模具內，於已形成之透鏡部14與模槽面56間配置有脫模膜30，且剝離力之最大值若在0.8N/25mm以下，即可將發光二極體1輕易地從模具脫模。 In the mold after the lens portion 14 is formed, the release film 30 is disposed between the formed lens portion 14 and the cavity surface 56, and the maximum value of the peeling force is 0.8 N/25 mm or less. Body 1 is easily released from the mold.
本發明之製造方法與上述具有略半球型透鏡部14之發光二極體1的製造相同，亦可適用於具有其他形狀之透鏡部14的發光二極體1之製造。此時，使用具有與各自的透鏡部14形狀相對應之模槽且可將發光元件12設置於預定位置的模具來實施上述步驟即可。 The manufacturing method of the present invention is similar to the manufacture of the light-emitting diode 1 having the slightly hemispherical lens portion 14, and can be applied to the manufacture of the light-emitting diode 1 having the lens portion 14 having another shape. At this time, the above steps may be carried out using a mold having a cavity corresponding to the shape of the respective lens portion 14 and capable of disposing the light-emitting element 12 at a predetermined position.
在以上所說明之本發明半導體裝置的製造方法中，由於是使用本發明之脫模膜，其在拉伸脫模膜時難以於脫模膜厚度產生不均，因此可抑制因脫模膜厚度的不均被轉印至樹脂密封部表面而可能顯現的樹脂密封部之表面應變。因此，即便樹脂密封部大型化、複雜化，仍可製出樹脂密封部經抑制之表面應變的半導體裝置。 In the method for producing a semiconductor device of the present invention described above, since the release film of the present invention is used, it is difficult to cause unevenness in the thickness of the release film when the release film is stretched, so that the thickness of the release film can be suppressed. The unevenness is transferred to the surface of the resin sealing portion to cause surface strain of the resin sealing portion which may appear. Therefore, even if the resin sealing portion is enlarged and complicated, a semiconductor device in which the surface strain of the resin sealing portion is suppressed can be produced.
以下，列舉實施例具體說明本發明，惟本發明不受該等例限定。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the examples.
例1~3係實施例，例4~8係比較例。 Examples 1 to 3 are examples, and examples 4 to 8 are comparative examples.
ETFE中之各重複單元的比率係從全部氟量測定及熔融19F-NMR測定之結果算出。 The ratio of each repeating unit in ETFE was calculated from the results of measurement of total fluorine amount and melting 19 F-NMR.
ETFE之MFR係依據ASTM D3159，使用5kg負荷在297℃下測定。 The MFR of ETFE is determined according to ASTM D3159 using a 5 kg load at 297 °C.
樹脂之熔點係使用示差掃描熱量計(SII公司製、DSC7020)，從在10℃/分下將樹脂加熱時的吸熱峰值求算。 The melting point of the resin was determined by using a differential scanning calorimeter (manufactured by SII, DSC 7020) to absorb the endothermic peak when the resin was heated at 10 ° C /min.
脫模膜在132℃下之拉伸彈性率係依據JIS K 7127測得。將使用與該脫模膜相同樹脂所製出之厚度為400μm的壓製薄片打孔成短冊形狀(試驗片型號5)，而製出試驗薄片。就該試驗薄片在薄片溫度：132℃、拉伸速度：1mm/ 分之條件下進行拉伸試驗，測定拉伸應變從0.05%至0.25%之硬力，並從下式求出拉伸彈性率。 The tensile modulus of the release film at 132 ° C was measured in accordance with JIS K 7127. A pressed sheet having a thickness of 400 μm made of the same resin as the release film was punched into a short book shape (test piece type 5) to prepare a test sheet. The test sheet was at a sheet temperature of 132 ° C and a stretching speed of 1 mm / The tensile test was carried out under the conditions of each, and the tensile force was measured from 0.05% to 0.25%, and the tensile modulus was determined from the following formula.
拉伸彈性率(MPa)=(應變0.25%時之硬力(MPa)-應變0.05%時之硬力(MPa))/(應變0.25%-應變0.05%)/100 Tensile modulus (MPa) = (hard force (MPa) at a strain of 0.25% - hard force (MPa) at a strain of 0.05%) / (strain 0.25% - strain 0.05%) / 100
剝離力係依據JIS K 6854-2，如以下方式，以脫模膜與2液混合型之熱硬化性聚矽氧樹脂的180°剝離試驗進行測定。 The peeling force was measured in accordance with JIS K 6854-2 by a 180° peeling test of a release film and a two-liquid mixing type thermosetting polyoxynoxy resin.
(a)於脫模膜與鋁板間適量塗佈經混合的熱硬化性聚矽氧樹脂(東麗．道康寧公司製、OE6630)。 (a) A suitable amount of a thermosetting polyxanthene resin (OE66, manufactured by Toray Dow Corning Co., Ltd.) was applied between the release film and the aluminum plate in an appropriate amount.
(b)將包夾熱硬化性聚矽氧樹脂之脫模膜與鋁板在130℃、1MPa下壓製5分鐘，使熱硬化性聚矽氧樹脂硬化。而，調節前述熱硬化性聚矽氧樹脂之塗佈量，以使已硬化之聚矽氧樹脂層的厚度成為100μm。 (b) The release film of the thermosetting polyoxyphthalocene resin and the aluminum plate were pressed at 130 ° C and 1 MPa for 5 minutes to cure the thermosetting polyoxymethylene resin. Then, the coating amount of the thermosetting polyoxynoxy resin was adjusted so that the thickness of the cured polyoxyalkylene resin layer became 100 μm.
(c)將已接著之脫模膜與鋁板切斷成25mm寬。 (c) The subsequently released release film and the aluminum plate were cut to a width of 25 mm.
(d)使用拉伸試驗機(ORIENTEC公司製、RTC-1310A)，在100mm/分之剝離速度下，測定剝離膜相對於試驗片中已硬化之聚矽氧樹脂層在常溫下的180°剝離力。 (d) Using a tensile tester (RTC-1310A, manufactured by ORIENTEC Co., Ltd.), the peeling film was measured at 180 ° peeling at room temperature with respect to the cured polyoxyxene resin layer in the test piece at a peeling speed of 100 mm/min. force.
(e)求算力(N)-抓取移動距離曲線中，抓取移動距離25mm至125mm的剝離力之最大值(單元為N/25mm)。 (e) Calculating force (N) - The maximum value of the peeling force (unit is N/25 mm) of the moving distance of 25 mm to 125 mm in the grab moving distance curve.
(f)使用5個試驗片，求出各脫模膜的剝離力最大值之算術平均。 (f) Using five test pieces, the arithmetic mean of the maximum peeling force of each release film was determined.
製造出發光二極體後，以目測評估透鏡部外觀。 After the light-emitting diode was fabricated, the appearance of the lens portion was visually evaluated.
◎(非常良好)：透鏡部表面一樣且未見瑕疵。 ◎ (very good): The surface of the lens portion is the same and no defects are observed.
○(良好)：透鏡部表面可見些許的應變但不影響機能。 ○ (good): A slight strain is visible on the surface of the lens but does not affect the function.
×(不良)：透鏡部表面可見應變、縐紋等瑕疵。 × (bad): Viscosity, crepe, etc. are visible on the surface of the lens portion.
於已抽成真空的94L不鏽鋼製高壓釜饋入1-氫十三氟己烷87.3kg、1,3-二氯-1,1,2,2,3-五氟丙烷(旭硝子公司製、AK225cb。以下表記為AK225cb)4.21kg及2.13kg之PFBE，一邊攪拌一邊升溫至66℃，並導入TFE/E=89/11(莫耳比)之混合氣體直至成為1.5MPaG，饋入50質量%過氧三甲基乙酸三級丁酯的AK225cb溶液60.4g，並開始聚合。聚合中，以壓力成為1.5MPaG的方式連續添加TFE/E=60/40(莫耳比)之混合氣體及相對於該混合氣體為相當於7.0莫耳%之量的PFBE，並在饋入TFE/E混合氣體7.19kg後將高壓釜冷卻，並將殘留氣體排氣，使聚合結束。聚合所需時間為333分。 The autoclave of 94L stainless steel which has been evacuated is fed with 1-hydrotrifluorohexane 87.3kg, 1,3-dichloro-1,1,2,2,3-pentafluoropropane (made by Asahi Glass Co., Ltd., AK225cb) The following table is labeled as AK225cb) 4.21 kg and 2.13 kg of PFBE, and the temperature is raised to 66 ° C while stirring, and a mixed gas of TFE/E = 89/11 (mole ratio) is introduced until it becomes 1.5 MPaG, and 50% by mass is fed. 60.4 g of AK225cb solution of octamethyl butyl triacetate was started and polymerization was started. In the polymerization, a mixed gas of TFE/E=60/40 (mole ratio) is continuously added so that the pressure becomes 1.5 MPaG, and PFBE is equivalent to 7.0 mol% with respect to the mixed gas, and is fed into the TFE. After the /E mixed gas was 7.19 kg, the autoclave was cooled, and the residual gas was exhausted to complete the polymerization. The time required for the polymerization was 333 minutes.
將製得之ETFE漿料移往220L之造粒槽，加入77L之水一邊攪拌一邊加熱，並除去聚合溶媒及殘留單體而製得7.2kg之粒狀ETFE(1)。 The obtained ETFE slurry was transferred to a 220 L granulation tank, heated while stirring with 77 L of water, and the polymerization solvent and residual monomers were removed to obtain 7.2 kg of granular ETFE (1).
製得之ETFE(1)係以TFE為主體之重複單元/以E為主體之重複單元/以PFBE為主體之重複單元=54.5/39.0/6.5(莫耳比)、MFR：16.2g/10分、且熔點：195℃。 The obtained ETFE (1) is a repeating unit mainly composed of TFE / a repeating unit mainly composed of E / a repeating unit mainly composed of PFBE = 54.5 / 39.0 / 6.5 (Morby ratio), MFR: 16.2 g / 10 minutes And melting point: 195 ° C.
藉由經進行模嘴調整以使厚度成為50μm的擠壓機，在300℃下熔融擠出ETFE(1)而製得厚度50μm之脫模膜(1)。脫 模膜(1)在132℃下之拉伸彈性率為12MPa，剝離力之最大值為0.6N/25mm。 The release film (1) having a thickness of 50 μm was obtained by melt-extruding ETFE (1) at 300 ° C by performing extruder adjustment to an extruder having a thickness of 50 μm. Take off The tensile modulus of the film (1) at 132 ° C was 12 MPa, and the maximum peeling force was 0.6 N / 25 mm.
作為發光元件12使用了白色發光元件(動作電壓：3、5V、消費電流：10mA)。 A white light-emitting element (operating voltage: 3, 5 V, consumption current: 10 mA) was used as the light-emitting element 12.
作為脫模膜30則使用了脫模膜(1)。 As the release film 30, a release film (1) is used.
作為密封樹脂40使用了2液混合型之硬化性聚矽氧樹脂(信越化學工業公司製之LPS-3412A及信越化學工業公司製之LPS-3412B的等量混合物)。而，該硬化性聚矽氧樹脂會成為透明的硬化樹脂。 As the sealing resin 40, a two-liquid mixing type curable polyoxynoxy resin (LPS-3412A manufactured by Shin-Etsu Chemical Co., Ltd. and an equal-mixed mixture of LPS-3412B manufactured by Shin-Etsu Chemical Co., Ltd.) was used. Further, the curable polyoxynoxy resin becomes a transparent hardening resin.
作為模具使用了圖11顯示之模具。上模50之模槽54的形狀係設成與表面積56mm2之略半球型透鏡部相對應的形狀。 The mold shown in Fig. 11 was used as a mold. The shape of the cavity 54 of the upper mold 50 is set to a shape corresponding to a slightly hemispherical lens portion having a surface area of 56 mm 2 .
以覆蓋上模50之模槽54的方式配置脫模膜30。於下模52配置安裝有發光元件12之基板10使發光元件12位於模槽54之開口部中心，又於樹脂配置部62之塞件64上配置前述硬化性聚矽氧樹脂。藉由真空抽吸將脫模膜30真空吸著至模槽面56並進行合模後，將密封樹脂40充填置模槽54內。將模具加熱使密封樹脂40硬化而形成略半球型的透鏡部14。模具的加熱溫度係設為110℃。又，硬化時間設為3分。其後，將上模50與下模52分模並從模具取出發光二極體1。評估透鏡部外觀。結果顯示於表1。 The release film 30 is disposed so as to cover the cavity 54 of the upper mold 50. The substrate 10 on which the light-emitting element 12 is mounted is disposed on the lower mold 52 so that the light-emitting element 12 is positioned at the center of the opening of the cavity 54, and the curable polyoxynoxy resin is placed on the plug 64 of the resin placement portion 62. After the release film 30 is vacuum-absorbed to the cavity surface 56 by vacuum suction and the mold is closed, the sealing resin 40 is filled in the mold groove 54. The mold is heated to cure the sealing resin 40 to form a slightly hemispherical lens portion 14. The heating temperature of the mold was set to 110 °C. Also, the hardening time was set to 3 points. Thereafter, the upper mold 50 and the lower mold 52 are divided and the light-emitting diode 1 is taken out from the mold. The appearance of the lens portion was evaluated. The results are shown in Table 1.
除了調整模嘴使厚度成為25μm以外，以與例1相同的方法製得脫模膜(2)。脫模膜(2)在132℃下之拉伸彈性率為12MPa，剝離力之最大值為0.6N/25mm。 A release film (2) was obtained in the same manner as in Example 1 except that the thickness of the nozzle was adjusted to 25 μm. The tensile modulus of the release film (2) at 132 ° C was 12 MPa, and the maximum value of the peeling force was 0.6 N / 25 mm.
使用脫模膜(2)，以與例1相同的方法製造出發光二極體。評估透鏡部外觀。結果顯示於表1。 A light-emitting diode was produced in the same manner as in Example 1 using the release film (2). The appearance of the lens portion was evaluated. The results are shown in Table 1.
準備ETFE(2)，其以TFE為主體之重複單元/以E為主體之重複單元/以PFBE為主體之重複單元=56.4/39.6/4.0(莫耳比)、MFR：18g/10分、且熔點：222℃。 Prepare ETFE (2), which is a repeating unit mainly composed of TFE / a repeating unit mainly composed of E / a repeating unit mainly composed of PFBE = 56.4 / 39.6 / 4.0 (Mohr ratio), MFR: 18 g / 10 minutes, and Melting point: 222 ° C.
以1比1(質量比)混合例1之ETFE(1)及例2之ETFE(2)，以15mm雙軸擠壓機在300℃下熔融混煉而製得混煉物。使用該混煉物，以與例1相同的方法製得厚度50μm之脫模膜(3)。脫模膜(3)在132℃下之拉伸彈性率為20MPa，剝離力之最大值為0.5N/25mm。 The ETFE (1) of Example 1 and the ETFE (2) of Example 2 were mixed at a ratio of 1 to 1 (mass ratio), and melt-kneaded at 300 ° C in a 15 mm twin-screw extruder to obtain a kneaded product. Using this kneaded material, a release film (3) having a thickness of 50 μm was obtained in the same manner as in Example 1. The tensile modulus of the release film (3) at 132 ° C was 20 MPa, and the maximum value of the peeling force was 0.5 N / 25 mm.
使用脫模膜(3)，以與例1相同的方法製造出發光二極體。評估透鏡部外觀。結果顯示於表1。 A light-emitting diode was produced in the same manner as in Example 1 using the release film (3). The appearance of the lens portion was evaluated. The results are shown in Table 1.
於已抽成真空的94L不鏽鋼製高壓釜饋入1-氫十三氟己烷85.2kg、6.31kg之AK225cb及1.22kg之PFBE，一邊攪拌一邊升溫至66℃，並導入TFE/E=89/11(莫耳比)之混合氣體直至成為1.5MPaG，饋入50質量%過氧三甲基乙酸三級丁酯的AK225cb溶液30.2g，並開始聚合。聚合中，以壓力成為1.5MPaG的方式連續添加TFE/E=60/40(莫耳比)之混合氣體 及相對於該混合氣體為相當於3.3莫耳%之量的PFBE，饋入TFE/E混合氣體7.19kg後將高壓釜冷卻，並將殘留氣體排氣，使聚合結束。聚合所需時間為305分。 The 94L stainless steel autoclave which had been evacuated was fed with 85.2 kg of 1-hydrotrifluorohexane, 6.31 kg of AK225cb and 1.22 kg of PFBE, and the temperature was raised to 66 ° C while stirring, and introduced into TFE/E=89/. The mixed gas of 11 (mole ratio) was changed to 1.5 MPaG, and 30.2 g of an AK225cb solution of 50% by mass of tributyl butyl peroxytrimethylacetate was fed, and polymerization was started. In the polymerization, a mixed gas of TFE/E=60/40 (mole ratio) is continuously added at a pressure of 1.5 MPaG. And PFBE which is equivalent to 3.3 mol% with respect to this mixed gas, after feeding 7.19 kg of TFE / E mixed gas, the autoclave was cooled, and the residual gas was exhausted, and the polymerization was completed. The time required for the polymerization was 305 minutes.
將製得之ETFE漿料移往220L造粒槽，加入77L之水，一邊攪拌一邊加熱，並除去聚合溶媒及殘留單體而製得7.5kg之粒狀ETFE(3)。 The obtained ETFE slurry was transferred to a 220 L granulation tank, and 77 L of water was added thereto, and the mixture was heated while stirring, and the polymerization solvent and residual monomers were removed to obtain 7.5 kg of granular ETFE (3).
製得之ETFE(3)以TFE為主體之重複單元/以E為主體之重複單元/以PFBE為主體之重複單元=56.3/40.7/3.0(莫耳比)、MFR：17.3g/10分、且熔點：236.9℃。 The obtained ETFE (3) is a repeating unit mainly composed of TFE / a repeating unit mainly composed of E / a repeating unit mainly composed of PFBE = 56.3 / 40.7 / 3.0 (mole ratio), MFR: 17.3 g / 10 minutes, And melting point: 236.9 ° C.
藉由經進行模嘴調整以使厚度成為50μm的擠壓機，在300℃下將ETFE(3)熔融擠出而製得厚度50μm之脫模膜(4)。脫模膜(4)在132℃下之拉伸彈性率為40MPa，剝離力之最大值為0.3N/25mm。 The ETFE (3) was melt-extruded at 300 ° C to obtain a release film (4) having a thickness of 50 μm by performing die adjustment to a thickness of 50 μm. The tensile modulus of the release film (4) at 132 ° C was 40 MPa, and the maximum value of the peeling force was 0.3 N / 25 mm.
使用脫模膜(4)，以與例1相同的方法製造出發光二極體。評估透鏡部外觀。結果顯示於表1。 A light-emitting diode was produced in the same manner as in Example 1 using the release film (4). The appearance of the lens portion was evaluated. The results are shown in Table 1.
準備乙烯/丙烯/四氟乙烯共聚物(以下表記為PETFE)：以TFE為主體之重複單元/以E為主體之重複單元/以丙烯為主體之重複單元=54.8/28.7/16.5(莫耳比)、MFR：6g/10分、且熔點：172℃。 Preparation of ethylene/propylene/tetrafluoroethylene copolymer (hereinafter referred to as PETFE): repeating unit mainly composed of TFE / repeating unit mainly composed of E / repeating unit mainly composed of propylene = 54.8/28.7 / 16.5 (Mo Erbi ), MFR: 6 g/10 minutes, and melting point: 172 ° C.
藉由經進行模嘴調整以使厚度成為50μm的擠壓機，在250℃下將PETFE熔融擠出而製得厚度50μm之脫模膜(5)。 脫模膜(5)在132℃下之拉伸彈性率為4MPa，剝離力之最大值為0.8N/25mm。 The release film (5) having a thickness of 50 μm was obtained by melt-extruding PETFE at 250 ° C by performing extruder adjustment to an extruder having a thickness of 50 μm. The tensile modulus of the release film (5) at 132 ° C was 4 MPa, and the maximum value of the peeling force was 0.8 N / 25 mm.
使用脫模膜(5)，以與例1相同的方法製造出發光二極體。評估透鏡部外觀。結果顯示於表1。 A light-emitting diode was produced in the same manner as in Example 1 using the release film (5). The appearance of the lens portion was evaluated. The results are shown in Table 1.
準備ETFE膜(旭硝子公司製、Fluon LM-ETFE膜、厚度：50μm)。由LM-ETFE膜之原料樹脂製出的試驗薄片在132℃下之拉伸彈性率為28MPa，剝離力之最大值為0.3N/25mm。 An ETFE film (manufactured by Asahi Glass Co., Ltd., Fluon LM-ETFE film, thickness: 50 μm) was prepared. The test sheet prepared from the raw material resin of the LM-ETFE film had a tensile modulus at 28 ° C of 28 MPa and a maximum peel strength of 0.3 N / 25 mm.
使用ETFE膜，以與例1相同的方法製造出發光二極體。評估透鏡部外觀。結果顯示於表1。 A light-emitting diode was fabricated in the same manner as in Example 1 using an ETFE film. The appearance of the lens portion was evaluated. The results are shown in Table 1.
準備PP膜(FUTAMURA化學公司製、無延伸聚丙烯膜FPK等級、厚度：25μm)。由PP膜製出的試驗薄片在132℃下之拉伸彈性率為65MPa，剝離力之最大值為3.6N/25mm。 A PP film (FUTAMURA Chemical Co., Ltd., non-stretch polypropylene film FPK grade, thickness: 25 μm) was prepared. The tensile test modulus of the test piece produced from the PP film at 132 ° C was 65 MPa, and the maximum peeling force was 3.6 N / 25 mm.
使用PP膜，以與例1相同的方法製造出發光二極體。評估透鏡部外觀。結果顯示於表1。 A light-emitting diode was produced in the same manner as in Example 1 using a PP film. The appearance of the lens portion was evaluated. The results are shown in Table 1.
對以與例1相同的方法製得厚度50μm的脫模膜之其中一表面，實施電暈放電處理(使用TANTEC公司製Corona Generator HV-05-2、輸出電壓：60V、輸出頻率：30kHz)而製得脫模膜(8)。脫模膜(8)在132℃下之拉伸彈性率為12MPa，剝離力之最大值為6.5N/25mm。 One of the surfaces of the release film having a thickness of 50 μm was obtained in the same manner as in Example 1 and subjected to corona discharge treatment (using Corona Generator HV-05-2 manufactured by TANTEC Co., Ltd., output voltage: 60 V, output frequency: 30 kHz). A release film (8) was obtained. The release modulus of the release film (8) at 132 ° C was 12 MPa, and the maximum peel strength was 6.5 N / 25 mm.
使用脫模膜(8)，以與例1相同的方法製造出發光二極體 8。惟，使脫模膜(8)以朝向經電暈放電處理之面的方式配置於下模52側。評估透鏡部外觀。結果顯示於表1。 Using the release film (8), a light-emitting diode was fabricated in the same manner as in Example 1. 8. However, the release film (8) is placed on the lower mold 52 side so as to face the surface subjected to the corona discharge treatment. The appearance of the lens portion was evaluated. The results are shown in Table 1.
例4係將專利文獻1之實施例1進行複試者。在例4中，由於脫模膜的拉伸彈性率高，因此脫模膜不均勻地延伸而在模具追隨後的脫模膜上產生大幅的厚度差(不均)，且厚度差被轉印至透鏡部而成為外觀不良(應變)。 In Example 4, Example 1 of Patent Document 1 was retested. In Example 4, since the tensile modulus of the release film is high, the release film is unevenly extended to cause a large thickness difference (unevenness) on the release film which follows the mold, and the difference in thickness is transferred. It is a poor appearance (strain) to the lens portion.
在例5中，由於脫模膜的拉伸彈性率低，因此脫模膜捲取時過軟而無法均勻地施加張力，故容易產生縐紋，而縐紋被轉印至透鏡部而成為外觀不良。 In Example 5, since the release modulus of the release film is low, the release film is too soft to be uniformly applied to the tension, so that crepe is likely to occur, and the crepe is transferred to the lens portion to become an appearance. bad.
在例6中，由於ETFE膜的拉伸彈性率高，因此ETFE膜不均勻地延伸而在模具追隨後的ETFE膜上產生大幅的厚度差(不均)，且厚度差被轉印至透鏡部而成為外觀不良(應變)。 In Example 6, since the tensile modulus of the ETFE film was high, the ETFE film was unevenly extended to cause a large thickness difference (unevenness) on the ETFE film which was followed by the mold, and the difference in thickness was transferred to the lens portion. And it becomes a bad appearance (strain).
在例7中，由於PP膜之剝離力高，因此密封樹脂硬化後欲將模具分開使透鏡部與PP膜剝離時，無法剝離，故無法生產發光二極體。 In Example 7, since the peeling force of the PP film was high, when the sealing resin was hardened and the lens portion was separated from the PP film, the film could not be peeled off, so that the light-emitting diode could not be produced.
在例8中，由於ETFE膜之剝離力最大值大，因此密封 樹脂硬化後欲將模具分開使透鏡部與ETFE膜剝離時，無法剝離，故無法生產發光二極體。 In Example 8, since the maximum peeling force of the ETFE film is large, the seal is sealed. After the resin is hardened and the mold portion is separated from the ETFE film, the lens portion cannot be peeled off, so that the light-emitting diode cannot be produced.
本發明之脫模膜可有效地作為配置於模具之模槽面的脫模膜使用，其中該模具係以密封樹脂將半導體裝置之半導體元件密封而形成樹脂密封部者。 The release film of the present invention can be effectively used as a release film disposed on a cavity surface of a mold in which a semiconductor element of a semiconductor device is sealed with a sealing resin to form a resin sealing portion.
而，在此係引用已於2012年1月30日提出申請之日本專利申請案2012-016476號之說明書、申請專利範圍、圖式及摘要的全部內容，並納入作為本發明說明書之揭示。 The entire disclosure of Japanese Patent Application No. 2012-016476, filed on Jan. 30, 2012, the entire contents of
1‧‧‧發光二極體 1‧‧‧Lighting diode
10‧‧‧基板 10‧‧‧Substrate
12‧‧‧發光元件 12‧‧‧Lighting elements
14‧‧‧透鏡部 14‧‧‧ lens department
20‧‧‧上模 20‧‧‧上模
22‧‧‧下模 22‧‧‧Down
24‧‧‧模槽 24‧‧ ‧ cavity
26‧‧‧模槽面 26‧‧‧Mold groove surface
30‧‧‧脫模膜 30‧‧‧ release film
Claims (14)
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| JP2012016476 | 2012-01-30 |
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| US9306135B2 (en) | 2016-04-05 |
| CN104080585A (en) | 2014-10-01 |
| KR20140119689A (en) | 2014-10-10 |
| US20140335634A1 (en) | 2014-11-13 |
| TW201334939A (en) | 2013-09-01 |
| WO2013115187A1 (en) | 2013-08-08 |
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| CN104080585B (en) | 2017-04-12 |
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