TWI607438B - - Google Patents
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- Publication number
- TWI607438B TWI607438B TW105112054A TW105112054A TWI607438B TW I607438 B TWI607438 B TW I607438B TW 105112054 A TW105112054 A TW 105112054A TW 105112054 A TW105112054 A TW 105112054A TW I607438 B TWI607438 B TW I607438B
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105112054A TW201738888A (zh) | 2016-04-18 | 2016-04-18 | 記憶體之結構 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105112054A TW201738888A (zh) | 2016-04-18 | 2016-04-18 | 記憶體之結構 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201738888A TW201738888A (zh) | 2017-11-01 |
TWI607438B true TWI607438B (zh) | 2017-12-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105112054A TW201738888A (zh) | 2016-04-18 | 2016-04-18 | 記憶體之結構 |
Country Status (1)
Country | Link |
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TW (1) | TW201738888A (zh) |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5463235A (en) * | 1993-07-26 | 1995-10-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory comprising a memory cell without a transistor |
TW504836B (en) * | 2001-01-11 | 2002-10-01 | Fujitsu Ltd | Semiconductor device and method for fabricating the same |
US20060092691A1 (en) * | 2004-11-02 | 2006-05-04 | Sony Corporation | Memory element and method of driving the same |
US7796416B2 (en) * | 2005-12-27 | 2010-09-14 | Sharp Kabushiki Kaisha | Variable resistance element, its manufacturing method and semiconductor memory device comprising the same |
US20110254103A1 (en) * | 2010-04-20 | 2011-10-20 | Young-Nam Hwang | Semiconductor Memory Devices Having Strain Layers Therein That Increase Device Performance And Methods of Forming Same |
US20120230085A1 (en) * | 2010-09-28 | 2012-09-13 | Ken Kawai | Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device |
TW201248863A (en) * | 2011-01-12 | 2012-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US20120319071A1 (en) * | 2011-06-15 | 2012-12-20 | Nobuyoshi Awaya | Non-volatile semiconductor memory device and manufacturing method thereof |
US20130193396A1 (en) * | 2012-01-30 | 2013-08-01 | Elpida Memory, Inc. | Variable resistive element, and non-volatile semiconductor memory device |
US20130248809A1 (en) * | 2012-03-22 | 2013-09-26 | Elpida Memory, Inc. | Variable resistive element and nonvolatile semiconductor memory device |
US20130264534A1 (en) * | 2012-04-04 | 2013-10-10 | Gwangju Institute Of Science And Technology | Selection device and nonvolatile memory cell including the same and method of fabricating the same |
US20130285005A1 (en) * | 2011-03-04 | 2013-10-31 | Sharp Kabushiki Kaisha | Variable resistive element, method for producing the same, and nonvolatile semiconductor memory device including the variable resistive element |
US20140091274A1 (en) * | 2012-09-28 | 2014-04-03 | Young-Bae Kim | Memory devices having unit cell as single device and methods of manufacturing the same |
US20140126269A1 (en) * | 2004-04-06 | 2014-05-08 | Bao Tran | Resistive memory |
US20150003144A1 (en) * | 2013-06-28 | 2015-01-01 | International Business Machines Corporation | Resistive random-access memory cells |
US20150043267A1 (en) * | 2013-08-06 | 2015-02-12 | Samsung Electronics Co., Ltd. | Variable resistance memory device and a variable resistance memory system including the same |
US20150249113A1 (en) * | 2014-02-28 | 2015-09-03 | Kabushiki Kaisha Toshiba | Nonvolatile memory device |
TW201539816A (zh) * | 2014-01-07 | 2015-10-16 | Taiwan Semiconductor Mfg Co Ltd | 電阻式隨機存取記憶體裝置及電阻式隨機存取記憶體堆疊之形成方法 |
-
2016
- 2016-04-18 TW TW105112054A patent/TW201738888A/zh not_active IP Right Cessation
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5463235A (en) * | 1993-07-26 | 1995-10-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory comprising a memory cell without a transistor |
TW504836B (en) * | 2001-01-11 | 2002-10-01 | Fujitsu Ltd | Semiconductor device and method for fabricating the same |
US20140126269A1 (en) * | 2004-04-06 | 2014-05-08 | Bao Tran | Resistive memory |
US20060092691A1 (en) * | 2004-11-02 | 2006-05-04 | Sony Corporation | Memory element and method of driving the same |
US7796416B2 (en) * | 2005-12-27 | 2010-09-14 | Sharp Kabushiki Kaisha | Variable resistance element, its manufacturing method and semiconductor memory device comprising the same |
US20110254103A1 (en) * | 2010-04-20 | 2011-10-20 | Young-Nam Hwang | Semiconductor Memory Devices Having Strain Layers Therein That Increase Device Performance And Methods of Forming Same |
US20120230085A1 (en) * | 2010-09-28 | 2012-09-13 | Ken Kawai | Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device |
TW201248863A (en) * | 2011-01-12 | 2012-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US20130285005A1 (en) * | 2011-03-04 | 2013-10-31 | Sharp Kabushiki Kaisha | Variable resistive element, method for producing the same, and nonvolatile semiconductor memory device including the variable resistive element |
US20120319071A1 (en) * | 2011-06-15 | 2012-12-20 | Nobuyoshi Awaya | Non-volatile semiconductor memory device and manufacturing method thereof |
US20130193396A1 (en) * | 2012-01-30 | 2013-08-01 | Elpida Memory, Inc. | Variable resistive element, and non-volatile semiconductor memory device |
US20130248809A1 (en) * | 2012-03-22 | 2013-09-26 | Elpida Memory, Inc. | Variable resistive element and nonvolatile semiconductor memory device |
US20130264534A1 (en) * | 2012-04-04 | 2013-10-10 | Gwangju Institute Of Science And Technology | Selection device and nonvolatile memory cell including the same and method of fabricating the same |
US20140091274A1 (en) * | 2012-09-28 | 2014-04-03 | Young-Bae Kim | Memory devices having unit cell as single device and methods of manufacturing the same |
US20150003144A1 (en) * | 2013-06-28 | 2015-01-01 | International Business Machines Corporation | Resistive random-access memory cells |
US20150043267A1 (en) * | 2013-08-06 | 2015-02-12 | Samsung Electronics Co., Ltd. | Variable resistance memory device and a variable resistance memory system including the same |
TW201539816A (zh) * | 2014-01-07 | 2015-10-16 | Taiwan Semiconductor Mfg Co Ltd | 電阻式隨機存取記憶體裝置及電阻式隨機存取記憶體堆疊之形成方法 |
US20150249113A1 (en) * | 2014-02-28 | 2015-09-03 | Kabushiki Kaisha Toshiba | Nonvolatile memory device |
Also Published As
Publication number | Publication date |
---|---|
TW201738888A (zh) | 2017-11-01 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |