TWI605617B - Light emitting diode device and manufacturing method thereof - Google Patents

Description

Light-emitting diode device and method of manufacturing same

The present invention relates to a light-emitting device and a method of fabricating the same, and more particularly to a light-emitting device having a light-emitting diode and a method of fabricating the same.

Light emitting diodes (LEDs) have become the mainstream light source due to their high luminous efficiency, long life and low power consumption. In recent years, they have gradually replaced traditional tungsten light bulbs, halogen bulbs or tubes. The body is also widely used in large screen color display, automotive lighting, traffic signal, multimedia display and optical communication. However, the electrodes of the light-emitting diodes may be in contact with the air during the manufacturing process or during transportation, and may be easily contaminated by particles or dirt, and the resistance of the subsequent wires connecting the electrodes may increase or the adhesion may be poor. , easy to fall off and other shortcomings. Therefore, a new process method is needed to improve the above phenomenon.

The present disclosure includes a light emitting diode device including a substrate; a semiconductor light emitting stack on the substrate; an electrode on the semiconductor light emitting stack for external electrical bonding; and a protective layer covering the electrode The upper surface, wherein the protective layer has the property of being cracked by heat or/and can be broken down upon external electrical bonding.

The present disclosure also includes a method of fabricating a light emitting diode device comprising: forming a semiconductor light emitting layer on a substrate; forming an electrode on the semiconductor light emitting layer for use as an external electrical bonding; and forming a protective layer and The upper surface of the electrode is covered, wherein the protective layer has the property of being cracked by heat or/and can be broken down upon external electrical bonding.

100‧‧‧Lighting diode device

102‧‧‧Substrate

103,103'‧‧‧Semiconductor light-emitting laminate

104‧‧‧First semiconductor layer

106, 106’‧‧‧Lighting layer

108, 108'‧‧‧second semiconductor layer

110‧‧‧second electrode

112‧‧‧First electrode

114‧‧‧ Current Barrier

116, 116'‧‧‧ Transparent Conductive Layer

117‧‧‧ patterned photoresist layer

118‧‧‧Protective layer

120‧‧‧ cerium oxide protective layer

FIG. 1A is a schematic cross-sectional view of a light emitting diode device according to an embodiment.

FIG. 1B is a schematic cross-sectional view of a light emitting diode device according to another embodiment.

FIG. 1C is a schematic cross-sectional view of a light emitting diode device according to another embodiment.

FIG. 1D is a schematic cross-sectional view showing a light emitting diode device according to another embodiment.

2 to 4 are schematic cross-sectional views showing an intermediate process step of the light emitting diode device according to some embodiments.

The semiconductor device of the present invention will be described in detail below. It will be appreciated that the following description provides many different embodiments or examples for implementing the invention. The specific elements and arrangements described below are intended to provide a brief description of the invention. Of course, these are by way of example only and not as a limitation of the invention. Moreover, repeated numbers or labels may be used in different embodiments. These repetitions are merely for the purpose of simplicity and clarity of the invention and are not to be construed as a limitation of the various embodiments and/or structures discussed. Furthermore, when a first material layer is on or above a second material layer, the first material layer is in direct contact with the second material layer. Alternatively, it is also possible to have one or more layers of other materials interposed, in which case there may be no direct contact between the first layer of material and the second layer of material.

In addition, relative terms such as "lower" or "bottom" and "higher" or "top" may be used in the embodiments to describe the relative relationship of one element to another. can It will be understood that if the illustrated device is flipped upside down, the component described on the "lower" side will be the component on the "higher" side.

Here, the terms "about" and "about" are usually expressed within 20% of a given value or range, preferably within 10%, and more preferably within 5%. The quantity given here is an approximate quantity, meaning that the meaning of "about" or "about" may be implied without specific explanation.

Please refer to FIG. 1A , which illustrates a schematic cross-sectional view of the LED device 100 . As shown in FIG. 1A, the LED device 100 includes a semiconductor light emitting layer 103 disposed on a substrate 102. The semiconductor light emitting layer 103 includes a first semiconductor layer 104, a light emitting layer 106 disposed on the first semiconductor layer 104, a portion of the exposed first semiconductor layer 104, and a first layer disposed on the light emitting layer 106. Two semiconductor layers 108. In some embodiments, substrate 102 can be a sapphire substrate, gallium phosphide (GaP), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), or tantalum carbide (SiC).

In general, the first semiconductor layer 104 and the second semiconductor layer 108 have different conductivity types. In some embodiments, the first semiconductor layer 104 is an n-type semiconductor material, and the second semiconductor layer 108 is a p-type semiconductor material. . In some embodiments, the semiconductor material includes aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), aluminum gallium nitride (AlGaN), aluminum indium nitride (AlInN), indium gallium nitride. (InGaN), aluminum indium gallium nitride (AlInGaN), or a combination thereof.

The luminescent layer 106 can include a quantum well structure of one or a plurality of quantum well layers. The light emitting layer 106 can be combined with the holes to emit light by applying voltage electrons. The material of the light emitting layer 106 may include inGaN, indium gallium nitride (AlGaInN), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP), indium phosphide. Arsenic (InAsP), indium gallium arsenide (InGaAs), or a combination thereof.

Referring to FIG. 1A, a first electrode 112 is disposed on the second semiconductor layer 108 of the semiconductor light emitting layer 103, and a second electrode 110 is disposed on the exposed first semiconductor layer 104 of the semiconductor light emitting layer 103. In some embodiments, the materials of the first electrode 112 and the second electrode 110 include Chromium, platinum, titanium, aluminum, copper, nickel, gold or a combination of the above. The first electrode 112 and the second electrode 110 are used for electrical connection with an external power source or an electronic component. The bonding of the electrical connections includes wire bonding in a wire bonding manner or electrical connection to the outside in a flip chip bonding manner. Since the first electrode 112 and the second electrode 110 are in contact with the air during the process or the transportation process, the first electrode 112 and the second electrode 110 are easily contaminated by particles or dirt, thereby affecting the quality of the subsequent package bonding of the LED device 100. stability. Therefore, as shown in FIG. 1A, the LED device 100 of the present disclosure includes a protective layer 118 disposed on the second electrode 110 and the first electrode 112 and substantially covering the second electrode 110 and the first electrode. 112 above the surface. In some embodiments, the total area coverage of the protective layer 118 on the upper surface of the second electrode 110 and the first electrode 112 is at least about 90%, such as about 95% to 100%. In some embodiments, as shown in FIG. 1B, the protective layer 118 extends further to the sidewalls of the second electrode 110 and the first electrode 112 and compliantly covers other portions of the semiconductor light emitting stack 103 including the first semiconductor layer 104 and the light emitting layer. 106 and a second semiconductor layer 108. In other embodiments, an etch or lift-off process is used to cause the protective layer 118 to cover only the second electrode 110 and the upper surface of the first electrode 112, as shown in FIG. 1A.

The protective layer 118 is an anti-fouling protective layer, which can protect the second electrode 110 and the first electrode 112 underneath from contamination by particles or dirt and prevent oxidation of the electrode metal. In the present embodiment, the material of the protective layer 118 may include a material that can be thermally cracked, such as a fluorine-based compound (eg, polytetrafluoroethylene). In other embodiments, the protective layer 118 may also be a nano polymer coating material (for example, epoxy resin or graphene oxide), a nano iron-based material (for example, ferric oxide (Fe 2 O 3 )), Nai. A non-ferrous material (for example, a nano silicate material) or a photocatalytic antifouling material (for example, titanium dioxide (TiO 2 )). In some embodiments, the protective layer 118 has a transparency greater than 60% under visible light. In some embodiments, the protective layer 118 has a water-repellent property with a water contact angle greater than 90° and a water contact angle greater than 60° above the unprotected layer. Its anti-fouling property is judged by appearance in an environment with a machine-contaminated gas. The appearance of the electrode without the protective layer is black and contaminated on the surface of the electrode metal, and the appearance of the electrode with the protective layer 118 maintains the metal on the surface of the electrode metal. Bright surface, with anti-pollution and anti-oxidation effect. In an embodiment, the protective layer 118 has a thickness of 10 to 500 angstroms (Å). The thinner thickness does not require additional processing to remove the protective layer 118 prior to external electrical bonding, such as prior to wire bonding. In one embodiment, the wire can be broken during wire bonding to enable the wire to be intimately engaged with the electrode. In another embodiment, the protective layer 118 includes a thermal cracking material, and the light emitting diode device 100 may be first heat treated, for example, the light emitting diode device 100 is baked, and the protective layer 118 is cracked before subsequent electrical externalization. The bonding process, such as wire bonding or flip chip bonding, may be at a temperature of from about 100 to 400 ° C, such as about 300 ° C, for a period of from about 5 to 10 minutes. In another embodiment, after the protective layer 118 is broken down during wire bonding, thermal cracking may be performed or heat treatment may be performed by using the annealing temperature after bonding to increase the adhesion of the bonding wire to the electrode.

As shown in FIGS. 1A and 1B, the LED device 100 further includes a current blocking layer 114 on the second semiconductor layer 108, and a transparent conductive layer 116 on the second semiconductor layer 108 covering the current barrier. The layer 114, wherein the transparent conductive layer 116 is located between the second semiconductor layer 108 and the first electrode 112, and the position of the current blocking layer 114 corresponds to the position of the first electrode 112. The current blocking layer 114 may include an insulating material such as yttrium oxide (SiOx) or nitrogen oxide (SiNx), and the position of the current blocking layer 114 corresponds to the position of the first electrode 112 (as shown in FIGS. 1A and 1B), The current can be evenly distributed to a region other than the first electrode 112, and the main light-emitting region can be distributed in a region other than the first electrode 112, thereby improving the light-emitting efficiency of the region other than the first electrode 112. The transparent conductive layer 116 is disposed between the second semiconductor layer 108 and the first electrode 112 to uniformly distribute the current path. In some embodiments, the material of the transparent conductive layer 116 may be indium tin oxide, zinc aluminum oxide or indium zinc oxide (Indium Zinc Oxide, IZO).

Referring to FIG. 1C, in some embodiments, a protective layer 120 made of cerium oxide (SiO 2 ) may be formed on the semiconductor light emitting layer 103 and the transparent conductive layer 116 shown in FIG. 1A, and the first layer is exposed. The electrode 112 and the second electrode 110. In some embodiments, the above-described ceria protective layer 120 may be formed by chemical vapor deposition (CVD), plasma assisted chemical vapor deposition (PECVD), or other suitable deposition process, and subsequent patterning processes.

Next, referring to FIG. 1D, in other embodiments, the ceria protective layer 120 may be formed on the semiconductor light emitting layer 103 and the transparent conductive layer 116 shown in FIG. 1B, and the first electrode 112 is exposed. And the second electrode 110, and the protective layer 118 is compliant to cover the ceria protective layer 120, the first electrode 112, and the second electrode 110. The cerium oxide protective layer 120 can provide electrical isolation of the semiconductor light emitting stack 103 from other devices and protect the semiconductor light emitting stack 103 from damage from the external environment. The material of the cerium oxide protective layer 120 is not limited to cerium oxide, and may be replaced by materials such as aluminum oxide (AlxOy) or tantalum nitride (SiNx).

2 to 4 are schematic cross-sectional views showing the intermediate process steps of the above-described light emitting diode device 100. Referring to FIG. 2, a semiconductor light emitting layer 103' is formed on a substrate 102. The semiconductor light emitting layer 103' includes a first semiconductor layer 104, a light emitting layer 106' on the first semiconductor layer 104, and a The second semiconductor layer 108' is on the light emitting layer 106'. In some embodiments, metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) is used. The first semiconductor layer 104, the light emitting layer 106', and the second semiconductor layer 108' are formed. In some embodiments, the first semiconductor layer 104 is an n-type semiconductor material and the second semiconductor layer 108' is a p-type semiconductor material.

Next, a current blocking layer 114 is formed on the second semiconductor layer 108'. In some embodiments, the current barrier layer 114 can be formed using an Electrobeam Evaporation process or a sputtering process. A transparent conductive layer 116' is then formed over the second semiconductor layer 108' and overlies the current barrier layer 114. In some embodiments, the transparent conductive layer 116' can be formed by a sputtering process. Next, a patterned photoresist layer 117 is formed on the transparent conductive layer 116' via a photolithography process, as shown in Fig. 2.

Referring to FIG. 3 to FIG. 4 , the patterned photoresist layer 117 is used as an etch mask layer, and a portion of the transparent conductive layer 116 ′ and the second semiconductor layer 108 that are not covered by the photoresist are removed through an etching process. 'and the light-emitting layer 106' to form the transparent conductive layer 116, the second semiconductor layer 108, and the light-emitting layer 106, to expose a portion of the first semiconductor layer 104, and then remove the patterned photoresist layer 117. In some embodiments, the etch process can further etch a portion of the first semiconductor layer 104 (not shown).

Next, referring to FIG. 4, a second electrode 110 is formed on the exposed first semiconductor layer 104, and a first electrode 112 is formed on the transparent conductive layer 116. In some embodiments, the second electrode 110 and the first electrode 112 may be formed using a photolithography process, an etching process, and a deposition process. In this embodiment, the transparent conductive layer 116 is located between the second semiconductor layer 108 and the first electrode 112, and the position of the current blocking layer 114 corresponds to the position of the first electrode 112.

Next, a deposition process of the protective layer 118 is performed. In an embodiment, a protective layer 118 may be formed using a spin coating method and cover the second electrode 110 and the upper surface of the first electrode 112. First, the light-emitting diode device 100 shown in FIG. 4 is attached to a carrier, and the carrier is placed on a socket, wherein the socket has a through hole, and the through hole can be connected to a vacuum system or pumping Gas system. Next, the socket is evacuated to closely attach the carrier to the socket. Then, the bearing is rotated, and at the same time, a chemical is sprayed onto the light-emitting diode device 100 by the nozzle on the socket, and the chemical agent containing the material of the protective layer 118 is uniformly coated on the light-emitting diode in a continuous spin coating manner. On the body device 100, a thin film (not shown) is formed on the light-emitting diode device 100, and then dried at room temperature or by heating to form the protective layer 118 described above. In the above, the rotating shoe can be controlled at a speed of 1000 to 6000 rpm to form a protective layer 118 having a thickness of about 10 to 500 angstroms. The protective layer 118 formed by spin coating will cover the second electrode 110, the first electrode 112, and the first semiconductor layer 104, the light emitting layer 106, and the second semiconductor layer 108, as shown in FIG. 1B. Thereafter, the photolithography process and the etching process may be performed to remove a portion of the protective layer, and the remaining protective layer 118 covers only the upper surface of the second electrode 110 or the first electrode 112, as shown in FIG. 1A.

In another embodiment, the deposition process of the protective layer 118 may be performed using a immersion method to form the protective layer 118 and cover the second electrode 110 and the upper surface of the first electrode 112. First, the light-emitting diode device 100 as shown in FIG. 4 is attached to a carrier, and the carrier is immersed in a fixed rate. In the container having the chemical agent containing the material of the protective layer 118, after standing for a while, the carrier is taken out at the same fixed rate to form the second electrode 110 on the light-emitting diode 100 and the upper surface of the first electrode 112. A film (not shown) is then dried at room temperature or by heating to form the aforementioned protective layer 118. In the above, the chemical is immersed for about 1 to 180 seconds to form the protective layer 118 having a thickness of about 10 to 500 angstroms. The protective layer 118 formed by the immersion method will cover the second electrode 110 and the first electrode 112, the semiconductor light emitting laminate 103, and the transparent conductive layer 116 as shown in FIG. 1B. Thereafter, the photolithography process and the etching process may be performed to remove a portion of the protective layer, and the remaining protective layer 118 covers only the upper surface of the second electrode 110 and the first electrode 112, as shown in FIG. 1A. In another embodiment, a wafer carrying the uncut plurality of LED devices 100 can be directly spin coated or immersed in the chemical containing the protective layer 118 on the surface of the wafer, according to the foregoing steps. (The spin coating or immersion process can be referred to the related description above, and will not be repeatedly described herein.) The protective film 118 is formed on the plurality of light emitting diode devices 100.

In another embodiment, a lift-off process may also be used to form the protective layer 118 covering only the upper surface of the second electrode 110 and the first electrode 112 as shown in FIG. 1A. Before forming the protective layer 118, a patterned sacrificial layer (not shown) is deposited on the LED device 100 to expose only the second electrode 110 and the first electrode 112. Then, a film is formed on the LED device 100 by using the spin coating or immersion method described above (in which the spin coating or immersion process can be referred to the related description, which will not be repeated here), and then the film is made at room temperature. The aforementioned protective layer 118 is formed by drying at room temperature or by heating. The patterned sacrificial layer and the protective layer thereon are then selectively removed, and the remaining protective layer 118 covers only the protective layer 118 of the second electrode 110 and the upper surface of the first electrode 112, as shown in FIG. 1A.

In one embodiment, as shown in FIG. 1D, a cerium oxide protective layer 120 may be formed on the light-emitting diode device 100 as shown in FIG. 4 as needed. In some embodiments, the ceria protective layer 120 may be conformally deposited on the semiconductor light emitting stack 103 by chemical vapor deposition (CVD), plasma assisted chemical vapor deposition (PECVD), or other suitable process. The transparent conductive layer 116 and the first electrode 112 are And the second electrode 110, and performing a patterning process on the ceria protective layer 120 to expose the first electrode 112 and the second electrode 110. Next, a protective layer 118 is deposited conformally on the ceria protective layer 120, the first electrode 112, and the second electrode 110 as shown in FIG. 1D. Thereafter, the photolithography process and the etching process may be performed to remove a portion of the protective layer, and the remaining protective layer 118 covers only the upper surface of the second electrode 110 or the first electrode 112, as shown in FIG. 1C.

In one embodiment, the light emitting diode device performs a thrust test in a wire bonding manner. After the protective layer 118 is formed by the light-emitting diode device, the protective layer 118 is directly formed and then bonded, and after the thermal cracking protective layer 118 is performed, the bonding between the bonding wires and the electrodes is performed. Thrust test, the force value (force) represents the force required to push the wire away from the upper surface of the second electrode 110 / the first electrode 112 after the wire is wired, and the required force is greater than the adhesion between the wire and the upper surface of the electrode. high. In one embodiment, after the formation of the protective layer 118, the thrust of the wire bonding directly to the electrode after the formation of the protective layer 118 is about 43.05 g, and the protective layer 118 is thermally cracked by the high temperature baking described above at about 300 ° C. The thrust of the line can be increased to 55.50g. It can be seen from the above test results that the high-temperature baking and thermal cracking and then the wire bonding can effectively improve the adhesion between the bonding wire and the electrodes. The protective layer 118 can simultaneously protect the upper surface of the second electrode 110 / the first electrode 112 covered by the surface from the particles or dirt, and break the protective layer when the wire is bonded, so that the bonding wire and the second electrode 110 / first The electrode 112 is electrically connected and has a certain degree of adhesion. Moreover, after the protective layer 118 is thermally cracked, the adhesion between the bonding wire and the second electrode 110/first electrode 112 can be further improved, thereby improving the stability of the LED device. The experimental test of this embodiment forms the protective layer 118 by the immersion method, and the thickness of the protective layer 118 is about 272 nm, but when the spin coating or other coating method is adopted, the thickness can be made thinner while the antifouling protective film is still retained. The best implementation of the characteristics of the thickness of 10 to 500 angstroms, the thrust test can be improved. In another embodiment, after the wire bonding breaks through the protective layer 118, thermal cracking or heat treatment using the annealing temperature after wire bonding can be performed to improve the adhesion of the bonding wire to the electrode. In one embodiment, the annealing temperature after wire bonding may be from 150 ° C to 230 ° C.

In addition to the features of the foregoing embodiments, the LED device of the other embodiment further includes a first extension electrode and a second extension electrode (not shown); and the first embodiment and the first embodiment For example, in FIG. 1B, the first extension electrode is disposed on the second semiconductor layer 108 of the semiconductor light emitting layer 103, and is connected to the first electrode 112 and extends from the first electrode 112 toward the second electrode 110. The second extension electrode is disposed on the exposed first semiconductor layer 104 of the semiconductor light emitting layer 103, and is connected to the second electrode 110 and extends from the second electrode 110 toward the first electrode 112. A current blocking layer (not shown) may also be disposed under the first extension electrode and the second extension electrode to average current distribution. The materials of the first extension electrode and the second extension electrode are the same as those of the first electrode 112 and the second electrode 110, and include chromium, platinum, titanium, aluminum, copper, nickel, gold or a combination thereof. The protective layer 118 may also be disposed on the upper surface of the first extension electrode and the second extension electrode and substantially cover the upper surface thereof. The size of the first extension electrode and the second extension electrode, for example, the width, is smaller than the width of the first electrode 112 and the second electrode 110. The current diffusion of the light-emitting layer 103 is improved by the high conductivity of the extension electrode, and the light emitted from the light-emitting layer 106 can be reduced by the electrode and the light extraction efficiency can be improved for the purpose of achieving current diffusion.

In summary, the present invention prevents the subsequent process (for example, before the package end electrical bonding process or during the transfer process) by forming the protective layer 118 on the upper surface of the second electrode 110 and the first electrode 112. Contact with air is contaminated or oxidized by particles or dirt. The protective layer 118 has a relatively thin thickness, for example, 10 to 500 angstroms, and can directly break the protective layer 118 during external electrical bonding, or thermally cure the protective layer 118 after high-temperature baking, and then perform external electrical bonding. At the same time, the quality and stability of the light-emitting diode device are maintained.

Although the embodiments of the present invention and the advantages thereof are disclosed above, it is not intended to limit the present invention, and any one of ordinary skill in the art can be modified, substituted, and substituted without departing from the spirit and scope of the present invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims. Further, the scope of the present invention is not limited to the processes, machines, manufactures, compositions, devices, methods and steps in the specific embodiments described in the specification. Processes, machines, fabrications, compositions, devices, methods, and steps that are presently or in the future can be understood by those of ordinary skill in the art, as long as the same function can be implemented or obtained in the embodiments described herein. The same result can be used in accordance with the present invention. Accordingly, the scope of the invention includes the above-described processes, machines, manufactures, compositions, devices, methods, and steps. In addition, the scope of each of the claims constitutes an individual embodiment, and the scope of the invention also includes the combination of the scope of the application and the embodiments.

100‧‧‧Lighting diode device

102‧‧‧Substrate

103‧‧‧Semiconductor light-emitting laminate

104‧‧‧First semiconductor layer

106‧‧‧Lighting layer

108‧‧‧Second semiconductor layer

110‧‧‧second electrode

112‧‧‧First electrode

114‧‧‧ Current Barrier

116‧‧‧Transparent conductive layer

118‧‧‧Protective layer

120‧‧‧ cerium oxide protective layer

Claims (9)

A light emitting diode device comprising: a semiconductor light emitting stack on a substrate; an electrode on the semiconductor light emitting stack for external electrical bonding; and a protective layer covering the upper surface of the electrode Wherein the protective layer comprises a fluorine-based compound material, a nano-polymer coating material, a nano-iron-based material, a nano-iron-based material or a photocatalyst anti-fouling material. The light emitting diode device of claim 1, wherein the protective layer more conformally covers the semiconductor light emitting stack. A light emitting diode device comprising: a semiconductor light emitting stack on a substrate; an electrode on the semiconductor light emitting stack for external electrical bonding; and a protective layer covering the upper surface of the electrode Wherein the protective layer has a cracking temperature between 100 ° C and 400 ° C. The light-emitting diode device according to claim 1 or 3, wherein the protective layer has a thickness of 10 to 500 angstroms, and/or the visible layer has a visible light transparency of more than 60%, and/or The protective layer has a water contact angle greater than 90°. A method of manufacturing a light emitting diode device, comprising: forming a semiconductor light emitting layer on a substrate; forming an electrode on the semiconductor light emitting layer for use as an external electrical bonding; and forming a protective layer and covering the The upper surface of the electrode; wherein the protective layer comprises a fluorine-based compound material, a nano-polymer coating material, a nano-iron-based material, a nano-non-ferrous material, a photocatalyst anti-fouling material, or a cracking temperature of between 100 ° C and 400 °C material. The method for manufacturing a light-emitting diode device according to claim 5, further comprising: And performing an external electrical bonding step on the LED device, wherein the external electrical bonding step comprises: wire bonding, wherein a bonding wire is passed through the protective layer to be electrically connected or flip-chip bonded to the electrode. The method of manufacturing a light-emitting diode device according to claim 6, wherein the light-emitting diode device is further subjected to heat treatment after or before the wire bonding. The method of manufacturing a light-emitting diode device according to claim 7, wherein the heat treatment temperature is between 100 ° C and 400 ° C. The method of manufacturing a light-emitting diode device according to claim 5, wherein the protective layer is formed by spin coating or immersion.