TWI603654B - Circuit board and method for manufacturing the same - Google Patents

Circuit board and method for manufacturing the same Download PDF

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TWI603654B
TWI603654B TW106102427A TW106102427A TWI603654B TW I603654 B TWI603654 B TW I603654B TW 106102427 A TW106102427 A TW 106102427A TW 106102427 A TW106102427 A TW 106102427A TW I603654 B TWI603654 B TW I603654B
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layer
metal layer
substrate
circuit board
metal
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TW106102427A
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TW201828784A (en
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黃敬皓
李和興
林有成
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欣興電子股份有限公司
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Description

電路板與其製作方法 Circuit board and its making method

本發明是關於一種電路板與其製作方法。 The present invention relates to a circuit board and a method of fabricating the same.

由於消費性電子產品的發展已成為科技產品的主流,像是個人電腦、筆記型電腦、智慧型手機、數位相機或其他攜帶式電子產品,且其於消費市場之中也已受到熱烈關切。於此,攜帶式電子產品的發展更是近幾年來的開發重點。對此,設置於攜帶式電子產品內的電路板的需求也隨之增加。於電路板的製程中,電路板的生產成本與其良率具有相關性。當可使所生產的電路板的良率表現更佳時,電路板的生產成本也可隨之下降。因此,提升電路板的良率已成為當前重要研發課題之一。 As the development of consumer electronics has become the mainstream of technology products, such as personal computers, notebook computers, smart phones, digital cameras or other portable electronic products, and it has also received enthusiastic attention in the consumer market. Here, the development of portable electronic products is the focus of development in recent years. In response to this, the demand for circuit boards installed in portable electronic products has also increased. In the process of circuit board, the production cost of the board is related to its yield. When the yield of the produced circuit board is better, the production cost of the board can also be reduced. Therefore, improving the board's yield has become one of the most important research and development topics.

本發明之一實施方式提供一種電路板的製作方法,於電路板的製程中,可在形成線路層後,即對線路層進行自動光學檢測,藉以判斷線路層的狀態。再者,對線路層進行自動光學檢測的步驟會早於進行增層製程的步驟,藉以防止後 續製程所使用的材料會有報廢的風險。 One embodiment of the present invention provides a method of fabricating a circuit board in which an automatic optical inspection of a circuit layer can be performed after forming a circuit layer, thereby determining the state of the circuit layer. Furthermore, the step of performing an automatic optical inspection of the wiring layer is earlier than the step of performing the layering process, thereby preventing The materials used in the renewal process are at risk of being scrapped.

本發明之一實施方式提供一種電路板,設置於基板,且電路板包含介電層及線路層。介電層設置於基板上。線路層埋入介電層,並具有多個走線,其中每一走線具有相對的第一上表面及第一下表面,第一下表面面向基板,第一上表面自介電層暴露出來,且第一上表面於基板的垂直投影面積小於第一下表面於基板的垂直投影面積。 One embodiment of the present invention provides a circuit board disposed on a substrate, wherein the circuit board includes a dielectric layer and a circuit layer. The dielectric layer is disposed on the substrate. The circuit layer is buried in the dielectric layer and has a plurality of traces, wherein each trace has an opposite first upper surface and a first lower surface, the first lower surface faces the substrate, and the first upper surface is exposed from the dielectric layer And a vertical projection area of the first upper surface on the substrate is smaller than a vertical projection area of the first lower surface on the substrate.

於部分實施方式中,介電層具有第二上表面,第二上表面背向基板,其中第一上表面與基板之最小垂直距離為D1,而第二上表面與基板之最小垂直距離為D2,且2微米≧(D2-D1)>0微米。 In some embodiments, the dielectric layer has a second upper surface, the second upper surface facing away from the substrate, wherein a minimum vertical distance between the first upper surface and the substrate is D1, and a minimum vertical distance between the second upper surface and the substrate is D2 And 2 microns ≧ (D2-D1) > 0 microns.

於部分實施方式中,每一走線具有至少一側表面,側表面位於第一上表面與第一下表面之間,並連接第一上表面及第一下表面,且側表面由介電層覆蓋。 In some embodiments, each of the traces has at least one side surface, the side surface is located between the first upper surface and the first lower surface, and connects the first upper surface and the first lower surface, and the side surface is composed of a dielectric layer cover.

於部分實施方式中,側表面於接近第一上表面處呈現圓角,並由介電層覆蓋。 In some embodiments, the side surface is rounded near the first upper surface and covered by a dielectric layer.

本發明之一實施方式提供一種電路板的製作方法,包含以下步驟。形成第一金屬層於基板上,並形成第二金屬層於第一金屬層上,且第一金屬層所包含的材料異於第二金屬層所包含的材料。形成圖案層於第二金屬層上,並透過圖案層形成第三金屬層於第二金屬層上,且第二金屬層所包含的材料與第三金屬層所包含的材料相同。移除圖案層及部分第二金屬層,且剩餘的第二金屬層與第三金屬層的組合成為線路層。 An embodiment of the present invention provides a method of fabricating a circuit board, including the following steps. Forming a first metal layer on the substrate and forming a second metal layer on the first metal layer, and the first metal layer comprises a material different from the material included in the second metal layer. Forming a pattern layer on the second metal layer and forming a third metal layer on the second metal layer through the pattern layer, and the second metal layer comprises the same material as the third metal layer. The pattern layer and a portion of the second metal layer are removed, and the remaining combination of the second metal layer and the third metal layer becomes a wiring layer.

於部分實施方式中,電路板的製作方法更包含對 線路層進行自動光學檢測(automatic optical inspection;AOI),藉以判斷是否對線路層進行增層製程。 In some embodiments, the method for manufacturing the circuit board further includes The line layer performs automatic optical inspection (AOI) to determine whether to make a layering process for the circuit layer.

於部分實施方式中,增層製程包含形成介電層於線路層上,其中線路層被包覆於第一金屬層與介電層之間。 In some embodiments, the build-up process includes forming a dielectric layer on the wiring layer, wherein the wiring layer is coated between the first metal layer and the dielectric layer.

於部分實施方式中,製作方法更包含移除基板,並自線路層及介電層上移除第一金屬層。 In some embodiments, the fabrication method further includes removing the substrate and removing the first metal layer from the wiring layer and the dielectric layer.

於部分實施方式中,第一金屬層的材料包含第一金屬,線路層的材料包含第二金屬,且第一金屬的光反射率異於第二金屬的光反射率。 In some embodiments, the material of the first metal layer comprises a first metal, the material of the circuit layer comprises a second metal, and the light reflectivity of the first metal is different from the light reflectivity of the second metal.

於部分實施方式中,移除部分第二金屬層的步驟包含透過蝕刻劑移除部分第二金屬層,且第一金屬層對蝕刻劑的蝕刻率小於第二金屬層對溶劑的蝕刻率。 In some embodiments, the step of removing a portion of the second metal layer includes removing a portion of the second metal layer through the etchant, and the first metal layer has an etch rate to the etchant that is less than an etch rate of the second metal layer to the solvent.

100‧‧‧電路板 100‧‧‧ boards

102‧‧‧第一基板 102‧‧‧First substrate

104‧‧‧剝離層 104‧‧‧ peeling layer

105‧‧‧輔助金屬層 105‧‧‧Auxiliary metal layer

106‧‧‧第一金屬層 106‧‧‧First metal layer

108‧‧‧第二金屬層 108‧‧‧Second metal layer

110‧‧‧圖案層 110‧‧‧pattern layer

112‧‧‧第三金屬層 112‧‧‧ Third metal layer

113‧‧‧線路層 113‧‧‧Line layer

114‧‧‧走線 114‧‧‧Wiring

116‧‧‧介電層 116‧‧‧Dielectric layer

118‧‧‧第二基板 118‧‧‧second substrate

D1、D2‧‧‧距離 D1, D2‧‧‧ distance

L‧‧‧光束 L‧‧‧beam

S1‧‧‧第一上表面 S1‧‧‧ first upper surface

S2‧‧‧第一下表面 S2‧‧‧ first lower surface

S3‧‧‧側表面 S3‧‧‧ side surface

S4‧‧‧第二上表面 S4‧‧‧Second upper surface

第1A圖至第1I圖為依據本發明部分實施方式繪示電路板的製作方法於不同階段的側剖面示意圖。 1A to 1I are side cross-sectional views showing different steps of a method for fabricating a circuit board according to some embodiments of the present invention.

以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在 圖式中將以簡單示意的方式繪示之。 The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some conventional structures and components are used to simplify the drawing. The drawings will be illustrated in a simple schematic manner.

有鑑於電路板的生產成本與其良率具有相關性,提升電路板的良率將可降低電路板的報廢成本。於本發明的電路板的製作方法中,可在形成線路層後,即對線路層進行檢測,藉以判斷所形成的線路層是否適於進行後續製程。因此,可避免浪費後續製程所花費的成本。 In view of the correlation between the production cost of the board and its yield, increasing the yield of the board will reduce the scrap cost of the board. In the method of fabricating the circuit board of the present invention, the circuit layer can be detected after the formation of the circuit layer, thereby judging whether the formed circuit layer is suitable for subsequent processes. Therefore, the cost of wasting subsequent processes can be avoided.

第1A圖至第1I圖為依據本發明部分實施方式繪示電路板的製作方法於不同階段的側剖面示意圖。請看到第1A圖。於此階段中,先形成剝離層104與輔助金屬層105於第一基板102上。第一基板102可用以作為承載基板。剝離層104可以是膠體層,而輔助金屬層105的材料可以包含銅,例如為銅箔。接著,形成第一金屬層106於輔助金屬層105上,並形成第二金屬層108於第一金屬層106上。第一金屬層106及第二金屬層108可透過濺鍍或電鍍形成。第一金屬層106所包含的材料可異於第二金屬層108所包含的材料,使得第一金屬層106的材料特性與第二金屬層108的材料特性不同。例如,第一金屬層106的材料可包含鈦,而第二金屬層108的材料可包含銅,使得第一金屬層106的光反射率會異於第二金屬層108的光反射率。或是,於其他實施方式中,第一金屬層106的材料可包含暗色系的金屬,像是鈦、鎳、鉻、錳、鐵,藉此與銅在光澤上有明顯差異。 1A to 1I are side cross-sectional views showing different steps of a method for fabricating a circuit board according to some embodiments of the present invention. Please see Figure 1A. In this stage, the peeling layer 104 and the auxiliary metal layer 105 are first formed on the first substrate 102. The first substrate 102 can be used as a carrier substrate. The release layer 104 may be a colloid layer, and the material of the auxiliary metal layer 105 may comprise copper, such as a copper foil. Next, a first metal layer 106 is formed on the auxiliary metal layer 105, and a second metal layer 108 is formed on the first metal layer 106. The first metal layer 106 and the second metal layer 108 may be formed by sputtering or electroplating. The material of the first metal layer 106 may be different from the material of the second metal layer 108 such that the material properties of the first metal layer 106 are different from the material properties of the second metal layer 108. For example, the material of the first metal layer 106 may comprise titanium, and the material of the second metal layer 108 may comprise copper such that the light reflectivity of the first metal layer 106 may be different than the light reflectivity of the second metal layer 108. Alternatively, in other embodiments, the material of the first metal layer 106 may comprise a dark color metal such as titanium, nickel, chromium, manganese, or iron, whereby the copper has a significant difference in gloss.

請看到第1B圖。於此階段中,形成圖案層110於第二金屬層108上,且部分第二金屬層108可透過圖案層110暴露出來。圖案層110的材料可以是光阻。具體而言,可先形成 一層光阻層於第二金屬層108上。接著,對光阻層進行光罩製程,以使其於顯影後形成圖案層110。 Please see Figure 1B. In this stage, the pattern layer 110 is formed on the second metal layer 108, and a portion of the second metal layer 108 is exposed through the pattern layer 110. The material of the pattern layer 110 may be a photoresist. Specifically, it can be formed first A layer of photoresist is on the second metal layer 108. Next, the photoresist layer is subjected to a mask process to form the pattern layer 110 after development.

請看到第1C圖及第1D圖。於此階段中,透過圖案層110形成第三金屬層112於第二金屬層108上。具體而言,圖案層110可作為遮罩(mask),而第三金屬層112可透過電鍍形成在第二金屬層108上。第二金屬層108所包含的材料與第三金屬層112所包含的材料可相同,例如,第二金屬層108及第三金屬層112的材料可包含銅。此外,形成第二金屬層108的製程參數與形成第三金屬層112的製程參數可不同,以使第三金屬層112的緻密度大於第二金屬層108的緻密度,或是,使第三金屬層112的厚度大於第二金屬層108的厚度。當第三金屬層112形成後,移除圖案層110。於移除圖案層110後,部分的第二金屬層108會由第三金屬層112暴露出來。 Please see the 1C chart and the 1D chart. In this stage, the third metal layer 112 is formed on the second metal layer 108 through the pattern layer 110. Specifically, the pattern layer 110 can serve as a mask, and the third metal layer 112 can be formed on the second metal layer 108 by electroplating. The second metal layer 108 may comprise the same material as the third metal layer 112. For example, the materials of the second metal layer 108 and the third metal layer 112 may comprise copper. In addition, the process parameters for forming the second metal layer 108 may be different from the process parameters for forming the third metal layer 112 such that the density of the third metal layer 112 is greater than the density of the second metal layer 108, or The thickness of the metal layer 112 is greater than the thickness of the second metal layer 108. After the third metal layer 112 is formed, the pattern layer 110 is removed. After the pattern layer 110 is removed, a portion of the second metal layer 108 is exposed by the third metal layer 112.

請看到第1E圖。於此階段中,由第三金屬層112暴露出來的第二金屬層108可透過蝕刻移除。具體而言,由於第三金屬層112的緻密度及厚度分別大於第二金屬層108的緻密度及厚度,故可透過蝕刻劑移除由第三金屬層112暴露出來的第二金屬層108。此外,第一金屬層106對蝕刻劑的蝕刻率可小於第二金屬層108對蝕刻劑的蝕刻率,使得第一金屬層106可做為蝕刻製程的終止層,且剩餘的第二金屬層108於其與第一金屬層106的交界處會呈現圓角狀。於蝕刻製程後,剩餘的第二金屬層108與第三金屬層112的組合可成為線路層113,線路層113會具有多個走線114,且部分的第一金屬層106會由線路層113暴露出來。 Please see Figure 1E. In this stage, the second metal layer 108 exposed by the third metal layer 112 can be removed by etching. Specifically, since the density and thickness of the third metal layer 112 are respectively greater than the density and thickness of the second metal layer 108, the second metal layer 108 exposed by the third metal layer 112 can be removed by an etchant. In addition, the etch rate of the etchant by the first metal layer 106 may be less than the etch rate of the etchant by the second metal layer 108, such that the first metal layer 106 can serve as a termination layer for the etch process, and the remaining second metal layer 108 At the junction with the first metal layer 106, it will have a rounded shape. After the etching process, the combination of the remaining second metal layer 108 and the third metal layer 112 may become the wiring layer 113, the circuit layer 113 may have a plurality of traces 114, and a portion of the first metal layer 106 may be formed by the wiring layer 113. Exposed.

請看到第1F圖。於此階段中,對線路層113及第一金屬層106照射光束L,以對線路層113進行自動光學檢測(automatic optical inspection;AOI)。於自動光學檢測中,可在照射光束L後,透過感光耦合元件(charge-coupled device;CCD)擷取線路層113及第一金屬層106的影像。接著,透過影像中的線路層113及第一金屬層106的不同對比度,判斷線路層113是否有出現不預期的狀況,像是短路或斷路。換言之,由於第一金屬層106的光反射率會異於線路層113的光反射率,故可判斷線路層113是否有出現不預期的狀況。於自動光學檢測後,當線路層113的良率表現落在適當的狀況時,即判斷為可對線路層113進行後續的製程,像是增層製程。 Please see the 1F picture. At this stage, the wiring layer 113 and the first metal layer 106 are irradiated with the light beam L to perform automatic optical inspection (AOI) on the wiring layer 113. In the automatic optical detection, after the light beam L is irradiated, the image of the circuit layer 113 and the first metal layer 106 is extracted through a charge-coupled device (CCD). Next, through the different contrast ratios of the circuit layer 113 and the first metal layer 106 in the image, it is determined whether the circuit layer 113 has an unexpected condition, such as a short circuit or an open circuit. In other words, since the light reflectance of the first metal layer 106 is different from the light reflectance of the circuit layer 113, it can be judged whether or not the circuit layer 113 has an unexpected condition. After the automatic optical detection, when the yield performance of the circuit layer 113 falls within an appropriate condition, it is determined that the circuit layer 113 can be subjected to a subsequent process, such as a build-up process.

請看到第1G圖、第1H圖及第1I圖。於此階段中,對線路層113進行增層製程,其中增層製程包含形成介電層116於線路層113上及形成第二基板118於介電層116上,且線路層113被包覆於第一金屬層106與介電層116之間。第二基板118可用以作為轉移基板。接著,可透過剝離層104而使第一基板102自輔助金屬層105上脫離,藉以移除第一基板102及剝離層104並將輔助金屬層105暴露出來。於移除第一基板102後,再自線路層113及介電層116上移除輔助金屬層105及第一金屬層106,藉以將線路層113暴露出來,例如,可透過蝕刻移除輔助金屬層105及第一金屬層106。接著,將線路層113、介電層116及第二基板118的組合體反轉,即可得到如第1I圖的電路板100。 Please see the 1G, 1H, and 1I. In this stage, the wiring layer 113 is subjected to a build-up process, wherein the build-up process includes forming a dielectric layer 116 on the wiring layer 113 and forming a second substrate 118 on the dielectric layer 116, and the wiring layer 113 is coated on the circuit layer 113. Between the first metal layer 106 and the dielectric layer 116. The second substrate 118 can be used as a transfer substrate. Then, the first substrate 102 can be detached from the auxiliary metal layer 105 through the peeling layer 104, thereby removing the first substrate 102 and the peeling layer 104 and exposing the auxiliary metal layer 105. After the first substrate 102 is removed, the auxiliary metal layer 105 and the first metal layer 106 are removed from the circuit layer 113 and the dielectric layer 116, thereby exposing the circuit layer 113. For example, the auxiliary metal can be removed by etching. Layer 105 and first metal layer 106. Next, the combination of the wiring layer 113, the dielectric layer 116, and the second substrate 118 is reversed to obtain the circuit board 100 as shown in FIG.

透過上述製程所製作的電路板100可具有較強的 結構強度及增進後續所進行的表面黏著(surface mount technology;SMT)製程的良率,請見到以下說明。如第1I圖所示,電路板100的介電層116及線路層113位於第二基板118上,且線路層113埋入介電層116。線路層113的每一走線114具有相對的第一上表面S1及第一下表面S2及側表面S3。走線114的第一下表面S2面向第二基板118,而走線114的第一上表面S1自介電層116暴露出來,且走線114的第一上表面S1於第二基板118的垂直投影面積小於走線114的第一下表面S2於第二基板118的垂直投影面積。走線114的側表面S3位於第一上表面S1與第一下表面S2之間,並連接第一上表面S1及第一下表面S2,且側表面S3於接近第一上表面S1處呈現圓角。走線114的側表面S3會由介電層116覆蓋,且走線114的側表面S3的呈現圓角的部位也會由介電層116覆蓋。 The circuit board 100 fabricated through the above process can have a strong For structural strength and to improve the yield of subsequent surface mount technology (SMT) processes, please see the following instructions. As shown in FIG. 1I, the dielectric layer 116 and the wiring layer 113 of the circuit board 100 are located on the second substrate 118, and the wiring layer 113 is buried in the dielectric layer 116. Each of the traces 114 of the wiring layer 113 has a first first upper surface S1 and a first lower surface S2 and a side surface S3. The first lower surface S2 of the trace 114 faces the second substrate 118, and the first upper surface S1 of the trace 114 is exposed from the dielectric layer 116, and the first upper surface S1 of the trace 114 is perpendicular to the second substrate 118. The projected area is smaller than the vertical projected area of the first lower surface S2 of the trace 114 on the second substrate 118. The side surface S3 of the trace 114 is located between the first upper surface S1 and the first lower surface S2, and connects the first upper surface S1 and the first lower surface S2, and the side surface S3 presents a circle near the first upper surface S1. angle. The side surface S3 of the trace 114 is covered by the dielectric layer 116, and the portion of the side surface S3 of the trace 114 that is rounded is also covered by the dielectric layer 116.

在走線114的第一上表面S1於第二基板118的垂直投影面積小於走線114的第一下表面S2於第二基板118的垂直投影面積的情況下,由於走線114的側表面S3的呈現圓角的部位由介電層116覆蓋,故可防止線路層113的走線114自介電層116脫落,藉以提升電路板100的結構強度。 In the case where the vertical projection area of the first upper surface S1 of the trace 114 on the second substrate 118 is smaller than the vertical projection area of the first lower surface S2 of the trace 114 on the second substrate 118, due to the side surface S3 of the trace 114 The portion of the rounded corner is covered by the dielectric layer 116, so that the trace 114 of the wiring layer 113 can be prevented from falling off from the dielectric layer 116, thereby improving the structural strength of the circuit board 100.

另一方面,介電層116具有第二上表面S4,且第二上表面S4背向第二基板118。由於在電路板100的製程中,透過蝕刻移除由第三金屬層112(請見第1D圖及第1E圖)暴露出來的第二金屬層108(請見第1D圖及第1E圖)的步驟早於進行增層製程的步驟,故可減少走線114的第一上表面S1與介電層116的第二上表面S4之間的段差。於本實施方式中,走線114 的第一上表面S1與第二基板118之最小垂直距離為距離D1,而介電層116的第二上表面S4與第二基板118之最小垂直距離為距離D2,且2微米≧(距離D2-距離D1)>0微米。於其他實施方式中,走線114的第一上表面S1與介電層116的第二上表面S4為實質上共平面。由於減少了走線114的第一上表面S1與介電層116的第二上表面S4之間的段差,故可便於設置錫球(未繪示)於走線114的第一上表面S1上,藉以增進後續所進行的表面黏著製程的良率。 On the other hand, the dielectric layer 116 has a second upper surface S4 and the second upper surface S4 faces away from the second substrate 118. In the process of the circuit board 100, the second metal layer 108 exposed by the third metal layer 112 (see FIG. 1D and FIG. 1E) is removed by etching (see FIG. 1D and FIG. 1E). The step is earlier than the step of performing the build-up process, so that the step difference between the first upper surface S1 of the trace 114 and the second upper surface S4 of the dielectric layer 116 can be reduced. In the present embodiment, the trace 114 The minimum vertical distance between the first upper surface S1 and the second substrate 118 is the distance D1, and the minimum vertical distance between the second upper surface S4 of the dielectric layer 116 and the second substrate 118 is the distance D2, and 2 micrometers (distance D2) - Distance D1) > 0 microns. In other embodiments, the first upper surface S1 of the trace 114 and the second upper surface S4 of the dielectric layer 116 are substantially coplanar. Since the step difference between the first upper surface S1 of the trace 114 and the second upper surface S4 of the dielectric layer 116 is reduced, it is convenient to provide a solder ball (not shown) on the first upper surface S1 of the trace 114. In order to improve the yield of the subsequent surface adhesion process.

綜上所述,本發明的電路板的製作方法可於形成線路層後,即對線路層進行自動光學檢測,藉以判斷線路層的狀態。再者,對線路層進行自動光學檢測的步驟會早於進行增層製程的步驟,藉以防止後續製程所使用的材料會有報廢的風險。此外,於電路板的製程中,由於移除部分第二金屬層的步驟早於進行增層製程的步驟,故介電層對線路層的走線可有更好的包覆性,藉以防止線路層的走線自介電層脫落並提升電路板的結構強度。 In summary, the method for fabricating the circuit board of the present invention can perform automatic optical detection on the circuit layer after forming the circuit layer, thereby judging the state of the circuit layer. Furthermore, the step of performing an automated optical inspection of the circuit layer is earlier than the step of the build-up process to prevent the risk of scrapping the materials used in subsequent processes. In addition, in the process of the circuit board, since the step of removing a portion of the second metal layer is earlier than the step of performing the build-up process, the dielectric layer can have better coverage to the trace of the circuit layer, thereby preventing the line. The traces of the layers are detached from the dielectric layer and enhance the structural strength of the board.

雖然本發明已以多種實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described above in terms of various embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.

105‧‧‧輔助金屬層 105‧‧‧Auxiliary metal layer

106‧‧‧第一金屬層 106‧‧‧First metal layer

113‧‧‧線路層 113‧‧‧Line layer

L‧‧‧光束 L‧‧‧beam

Claims (10)

一種電路板,設置於一基板,且該電路板包含:一介電層,設置於該基板上:以及一線路層,埋入該介電層,並具有複數個走線,其中每一該走線具有相對的一第一上表面及一第一下表面,該第一下表面面向該基板,該第一上表面自該介電層暴露出來,且該第一上表面於該基板的垂直投影面積小於該第一下表面於該基板的垂直投影面積。 A circuit board is disposed on a substrate, and the circuit board comprises: a dielectric layer disposed on the substrate: and a circuit layer buried in the dielectric layer and having a plurality of traces, wherein each of the traces The wire has a first upper surface facing away from the substrate, the first upper surface is exposed from the dielectric layer, and a vertical projection of the first upper surface on the substrate The area is smaller than a vertical projected area of the first lower surface on the substrate. 如申請專利範圍第1項的電路板,其中該介電層具有一第二上表面,該第二上表面背向該基板,其中該第一上表面與該基板之最小垂直距離為D1,而該第二上表面與該基板之最小垂直距離為D2,且2微米≧(D2-D1)>0微米。 The circuit board of claim 1, wherein the dielectric layer has a second upper surface facing away from the substrate, wherein a minimum vertical distance between the first upper surface and the substrate is D1, and The minimum vertical distance between the second upper surface and the substrate is D2, and 2 microns ≧(D2-D1)>0 microns. 如申請專利範圍第1項的電路板,其中每一該走線具有至少一側表面,該側表面位於該第一上表面與該第一下表面之間,並連接該第一上表面及該第一下表面,且該側表面由該介電層覆蓋。 The circuit board of claim 1, wherein each of the traces has at least one side surface between the first upper surface and the first lower surface, and connects the first upper surface and the a first lower surface, and the side surface is covered by the dielectric layer. 如申請專利範圍第1項的電路板,其中該側表面於接近該第一上表面處呈現圓角,並由該介電層覆蓋。 The circuit board of claim 1, wherein the side surface is rounded near the first upper surface and covered by the dielectric layer. 一種電路板的製作方法,包含: 形成一第一金屬層於一基板上,並形成一第二金屬層於該第一金屬層上,且該第一金屬層所包含的材料異於該第二金屬層所包含的材料;形成一圖案層於該第二金屬層上,並透過該圖案層形成一第三金屬層於該第二金屬層上,且該第二金屬層所包含的材料與該第三金屬層所包含的材料相同;以及移除圖案層及部分該第二金屬層,且剩餘的該第二金屬層與該第三金屬層的組合成為一線路層。 A method of manufacturing a circuit board, comprising: Forming a first metal layer on a substrate, and forming a second metal layer on the first metal layer, and the first metal layer comprises a material different from the material contained in the second metal layer; forming a The pattern layer is on the second metal layer, and a third metal layer is formed on the second metal layer through the pattern layer, and the second metal layer comprises the same material as the third metal layer And removing the pattern layer and a portion of the second metal layer, and the remaining combination of the second metal layer and the third metal layer becomes a wiring layer. 如申請專利範圍第5項的電路板的製作方法,更包含:對該線路層進行自動光學檢測(automatic optical inspection;AOI),藉以判斷是否對該線路層進行一增層製程。 The method for manufacturing a circuit board according to claim 5, further comprising: performing automatic optical inspection (AOI) on the circuit layer, thereby determining whether to perform a build-up process on the circuit layer. 如申請專利範圍第6項的電路板的製作方法,其中該增層製程包含:形成一介電層於該線路層上,其中該線路層被包覆於該第一金屬層與該介電層之間。 The method of fabricating a circuit board of claim 6, wherein the layering process comprises: forming a dielectric layer on the circuit layer, wherein the circuit layer is coated on the first metal layer and the dielectric layer between. 如申請專利範圍第7項的電路板的製作方法,更包含:移除該基板,並自該線路層及該介電層上移除該第一金屬層。 The manufacturing method of the circuit board of claim 7, further comprising: removing the substrate, and removing the first metal layer from the circuit layer and the dielectric layer. 如申請專利範圍第5項的電路板的製作方法,其中該第一金屬層的材料包含一第一金屬,該線路層的材料包含一第二金屬,且該第一金屬的光反射率異於該第二金屬的光反射率。 The method of manufacturing the circuit board of claim 5, wherein the material of the first metal layer comprises a first metal, the material of the circuit layer comprises a second metal, and the light reflectance of the first metal is different from The light reflectivity of the second metal. 如申請專利範圍第5項的電路板的製作方法,其中移除部分該第二金屬層的步驟包含:透過一蝕刻劑移除部分該第二金屬層,且該第一金屬層對該蝕刻劑的蝕刻率小於該第二金屬層對該蝕刻劑的蝕刻率。 The method of manufacturing the circuit board of claim 5, wherein the removing the portion of the second metal layer comprises: removing a portion of the second metal layer through an etchant, and the first metal layer is the etchant The etch rate is less than the etch rate of the etchant by the second metal layer.
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Publication number Priority date Publication date Assignee Title
TW201014488A (en) * 2008-09-19 2010-04-01 Chi Mei Optoelectronics Corp Multilayer circuit board and manufacturing method thereof
TW201031286A (en) * 2009-02-06 2010-08-16 Tatung Co Circuit board structure
TW201117689A (en) * 2009-11-06 2011-05-16 Via Tech Inc Circuit substrate and fabricating process thereof
TWM497402U (en) * 2014-09-22 2015-03-11 Unimicron Technology Corp Multilayer circuit board
CN105764234A (en) * 2014-12-19 2016-07-13 富葵精密组件(深圳)有限公司 Circuit board structure and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201014488A (en) * 2008-09-19 2010-04-01 Chi Mei Optoelectronics Corp Multilayer circuit board and manufacturing method thereof
TW201031286A (en) * 2009-02-06 2010-08-16 Tatung Co Circuit board structure
TW201117689A (en) * 2009-11-06 2011-05-16 Via Tech Inc Circuit substrate and fabricating process thereof
TWM497402U (en) * 2014-09-22 2015-03-11 Unimicron Technology Corp Multilayer circuit board
CN105764234A (en) * 2014-12-19 2016-07-13 富葵精密组件(深圳)有限公司 Circuit board structure and manufacturing method thereof

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