TWI600087B - Heat treatment apparatus and method for manufacturing heat treatment apparatus - Google Patents

Description

Heat treatment device and method for manufacturing heat treatment device

The present invention relates to a heat treatment apparatus for heating a substrate by irradiating a flash light to a thin plate-shaped precision electronic substrate such as a semiconductor wafer (hereinafter simply referred to as "substrate"), and a method of manufacturing the same.

In the manufacturing process of a semiconductor device, impurity introduction is a step necessary for forming a pn junction in a semiconductor wafer. At present, the introduction of impurities is generally carried out by an ion implantation method followed by an annealing method. The ion implantation method is a technique in which an element such as boron (B), arsenic (As), or phosphorus (P) is ionized, and a semiconductor substrate is collided with a high acceleration voltage to physically perform impurity implantation. The implanted impurities are activated by annealing treatment. At this time, when the annealing time is about several seconds or more, the implanted impurities are deeply diffused by heat, and as a result, the joint depth is required to be too deep to cause an obstacle to formation of a good element.

Therefore, as an annealing technique for heating a semiconductor wafer in a very short time, flash lamp annealing (FLA) has been attracting attention in recent years. Flash anneal uses a xenon flash lamp (hereinafter referred to as "flash" for flash) to illuminate the surface of a semiconductor wafer with only a short time (milliseconds) of the surface of the semiconductor wafer implanted with impurities. The following) heat treatment technology for heating.

The emission spectrum of the xenon flash lamp is from the ultraviolet region to the near-infrared region, and the wavelength is shorter than that of the previous halogen lamp, which is substantially consistent with the basic absorption band of the semiconductor wafer of the crucible. Therefore, When the flash lamp is applied to the semiconductor wafer by the flash lamp, the semiconductor wafer can be rapidly heated by the small amount of transmitted light. Further, it has been found that when the flash light is irradiated for a very short time of several milliseconds or less, it is possible to selectively raise only the vicinity of the surface of the semiconductor wafer. Therefore, if the temperature is raised by the xenon flash lamp for a very short time, the impurities are not diffused deeper, and only the impurity activation can be performed.

In the lamp annealing apparatus using such a flash lamp, an O-ring is used as a sealing member in order to make the chamber in which the semiconductor wafer is housed airtight. Since the O-ring is made of a resin and the heat resistance temperature is relatively low, it is necessary to suppress the temperature rise when it is used in a heat treatment apparatus (for example, cooling by a chamber using a cooling fluid). Moreover, especially in the case where an O-ring is used in a heat treatment apparatus using a flash lamp, since the intense flash light is instantaneously irradiated, the deterioration of the O-ring caused by heat is not a problem, but rather the strength The surface deterioration of the O-ring caused by the strobe light irradiation is more problematic. The deterioration of the surface of the O-ring not only impairs the airtightness in the chamber, but is also a serious problem in that the deteriorated O-ring becomes a source of gas or particles.

Therefore, Patent Document 1 proposes to use an O-ring between the side wall of the chamber and the quartz window to seal the quartz window by pressing the chamber against the chamber, and the back side of the clamp ring is used. Sandblasting to make a rough surface of light diffuse reflection. If the back surface of the clamp ring is made rough, even if one part of the flash light enters between the clamp ring and the side wall of the chamber when the flash light is irradiated, the light can be prevented from being diffused and reflected on the back side of the clamp ring to reach the O shape. The ring prevents the deterioration of the O-ring.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-4427

Previously, a flash lamp annealing device for activating impurities as disclosed in Patent Document 1 It is used under normal pressure, but in recent years, flash annealing has also been studied for other processing purposes (for example, heat treatment of high dielectric constant gate insulating film). According to the purpose of processing, there is also a case where the chamber is decompressed to a vacuum. . In order to decompress the chamber to a vacuum, it is necessary to make the chamber itself a pressure resistant structure, and the quartz window that closes the opening of the chamber must also be thicker than those disclosed in Patent Document 1.

However, when it is found that the thickness of the quartz window is thickened, the amount of light entering the strobe light entering the quartz window during the illumination of the flash lamp is also increased. If only the back surface of the clamp ring is sandblasted, the O-ring is exposed to The flash light does not sufficiently prevent the surface from deteriorating.

The present invention has been made in view of the above problems, and an object thereof is to provide a heat treatment apparatus capable of preventing deterioration of an O-ring caused by irradiation of a flash lamp, and a method of manufacturing the same.

In order to solve the above problems, the invention of claim 1 is a heat treatment apparatus which heats the substrate by irradiating the substrate with strobe light, and is characterized by comprising: a chamber accommodating the substrate; and a holding portion, which is Holding a substrate in the chamber; a flash lamp disposed outside the chamber and on one side of the chamber; a quartz window covering an opening of the one side of the chamber; and an O-ring sandwiched into the chamber a side wall and a contact surface of the peripheral portion of the quartz window; and a window pressing member that presses a peripheral surface of the quartz window facing the contact surface toward the side wall of the chamber; and the quartz A light exposure obstruction portion is formed in a peripheral portion of the window, and the light exposure obstruction portion blocks light that has entered the peripheral portion of the quartz window after being emitted from the flash lamp, and reaches the O-ring.

According to a second aspect of the invention, in the heat treatment apparatus according to the first aspect of the invention, the light exposure preventing portion is a plurality of grooves which are formed on a surface of a peripheral portion of the quartz window.

According to a third aspect of the invention, in the heat treatment apparatus according to the second aspect of the invention, the plurality of grooves are formed in the opposite surface of the peripheral portion of the quartz window and the contact surface is apart from the O shape. The area outside the area where the ring is in contact.

Further, the invention of claim 4 is the heat treatment apparatus according to the invention of claim 2 or claim 3, characterized in that the plurality of grooves form a mirror surface.

According to a fifth aspect of the invention, in the heat treatment device according to the first aspect of the invention, the light exposure preventing portion is a mirror surface formed on a surface of a peripheral portion of the quartz window.

According to a sixth aspect of the invention, in the heat treatment apparatus of the invention of claim 5, the mirror surface is formed on the contact surface of a peripheral portion of the quartz window.

According to a seventh aspect of the invention, in the heat treatment apparatus of the invention of the sixth aspect, the mirror surface is further formed on the opposing surface and the end surface of the peripheral portion of the quartz window.

According to a second aspect of the invention, in the heat treatment device of the invention of the first aspect, the light exposure preventing portion is a rough surface formed on a surface of a peripheral portion of the quartz window.

According to a still further aspect of the invention, in the heat treatment apparatus of the invention of the eighth aspect, the rough surface is formed on the opposite surface of the peripheral portion of the quartz window.

According to a fourth aspect of the invention, in the heat treatment apparatus of the invention of the eighth aspect, the rough surface is formed in an area other than a portion in contact with the O-ring in the contact surface of the peripheral portion of the quartz window. .

According to a seventh aspect of the invention, in the heat treatment apparatus of the invention of the eighth aspect, the rough surface is formed on the opposite surface of the peripheral portion of the quartz window and the contact surface is in contact with the O-ring An area other than the part.

According to a second aspect of the invention, in the heat treatment apparatus according to the first aspect of the invention, the light exposure preventing portion is an opaque quartz provided on a peripheral portion of the quartz window.

The invention of claim 12 is the heat treatment apparatus according to the invention of claim 12, wherein the opaque quartz is provided in the contact at a peripheral portion of the quartz window The portion of the surface that is in contact with the O-ring described above.

According to a fourth aspect of the invention, in the heat treatment apparatus according to the invention of claim 12, the portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring is formed of transparent quartz.

Further, the invention of claim 15 is a method of manufacturing a heat treatment apparatus which heats the substrate by irradiating flash light from a flash lamp provided outside the chamber of the housing substrate and on one side of the chamber. The manufacturing method is characterized in that: the opening of the one side of the chamber is covered by a quartz window, and an O-ring is sandwiched between a sidewall of the chamber and a peripheral portion of the quartz window, and the quartz window is The surface of the peripheral portion is grooved to form a plurality of grooves.

Further, the invention of claim 16 is a method of manufacturing a heat treatment apparatus which heats the substrate by irradiating flash light from a flash lamp provided outside the chamber of the housing substrate and on one side of the chamber. The manufacturing method is characterized in that: the opening of the one side of the chamber is covered by a quartz window, and an O-ring is sandwiched between a sidewall of the chamber and a peripheral portion of the quartz window, and the quartz window is The surface of the peripheral portion is formed into a film of a metal film to form a mirror surface.

Further, the invention of claim 17 is a method of manufacturing a heat treatment apparatus which heats the substrate by irradiating flash light from a flash lamp provided outside the chamber of the housing substrate and on one side of the chamber. The manufacturing method is characterized in that: the opening of the one side of the chamber is covered by a quartz window, and an O-ring is sandwiched between a sidewall of the chamber and a peripheral portion of the quartz window, and the quartz window is The surface of the peripheral portion is sandblasted to form a rough surface.

Further, the invention of claim 18 is a method of manufacturing a heat treatment apparatus which heats the substrate by irradiating flash light from a flash lamp provided outside the chamber of the housing substrate and on one side of the chamber. a manufacturing method, characterized in that the opening of the one side of the chamber is covered by a quartz window and is on a side wall of the chamber An O-ring is interposed between the peripheral portions of the quartz window, and opaque quartz is welded to the peripheral portion of the quartz window.

According to a still further aspect of the invention, in the method of manufacturing the heat treatment apparatus according to the invention of claim 18, after the groove portion is formed in a portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring The fusion is performed in such a manner that the opaque quartz is buried in the groove portion.

According to a second aspect of the invention, in the method of manufacturing the heat treatment apparatus according to the invention of claim 18, the transparent quartz is provided in a portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring.

According to the invention of claim 1 to claim 14, since the light exposure preventing portion that blocks the light entering the peripheral portion of the quartz window from reaching the O-ring after being emitted from the flash lamp is formed on the peripheral portion of the quartz window, the flash light is The amount of light of the strobe light reaching the O-ring during irradiation is reduced, thereby preventing deterioration of the O-ring caused by the strobe light.

In particular, according to the inventions of claims 12 to 14, since the light exposure preventing portion is opaque quartz, contamination in the chamber due to the light exposure preventing portion can be prevented.

According to the invention of claim 15, since the plurality of grooves are formed by performing the groove processing on the surface of the peripheral portion of the quartz window, the light entering the peripheral portion of the quartz window when the strobe light is irradiated can be prevented by the plurality of grooves. The O-ring reduces the amount of light of the flash light reaching the O-ring, thereby preventing deterioration of the O-ring caused by the illumination of the flash lamp.

According to the invention of claim 16, since the metal film is formed on the surface of the peripheral portion of the quartz window to form a mirror surface, the light entering the peripheral portion of the quartz window when the strobe light is irradiated can be prevented from reaching the O-ring by the mirror surface. The amount of light of the flash light reaching the O-ring is reduced, thereby preventing deterioration of the O-ring caused by the illumination of the flash lamp.

According to the invention of claim 17, since the surface of the peripheral portion of the quartz window is sandblasted to form a rough surface, the light entering the peripheral portion of the quartz window when the strobe light is irradiated can be prevented from reaching the O shape by the rough surface. The ring reduces the amount of light of the flash light reaching the O-ring, thereby preventing deterioration of the O-ring caused by the flash light.

According to the invention of claim 18 to claim 20, since the opaque quartz is welded to the peripheral portion of the quartz window, the light entering the peripheral portion of the quartz window when the strobe light is irradiated can be prevented from reaching the O-ring by the opaque quartz. The amount of light of the flash light reaching the O-ring is reduced, thereby preventing deterioration of the O-ring caused by the illumination of the flash lamp.

1‧‧‧ Heat treatment unit

3‧‧‧Control Department

4‧‧‧Halogen heating department

5‧‧‧Flash heating department

6‧‧‧ chamber

7‧‧‧ Keeping Department

10‧‧‧Transportation mechanism

11‧‧‧Transfer arm

12‧‧‧Top pin

13‧‧‧Horizontal mobile agency

14‧‧‧ Lifting mechanism

21‧‧‧O-ring

22‧‧‧ slots

23‧‧‧Mirror

24‧‧‧Rough surface

25‧‧‧opaque quartz

26‧‧‧Transparent quartz

27‧‧‧Air exhaust hole

41‧‧‧Shell

43‧‧‧ reflector

51‧‧‧Shell

52‧‧‧ reflector

53‧‧‧Lighting window

61‧‧‧ side of the chamber

62‧‧‧ recess

63‧‧‧Upper chamber window

64‧‧‧Lower chamber window

65‧‧‧ Heat treatment space

66‧‧‧Transportation opening

67‧‧‧Clip ring (window pressing member)

68‧‧‧Reflective ring

69‧‧‧Reflecting ring

71‧‧‧Base ring

72‧‧‧Connecting Department

74‧‧‧Base

76‧‧ ‧ sales guide

77‧‧‧Incision Department

78‧‧‧ openings

79‧‧‧through holes

81‧‧‧ gas supply hole

82‧‧‧ buffer space

83‧‧‧ gas supply pipe

84‧‧‧ valve

85‧‧‧ gas supply source

87‧‧‧ buffer space

88‧‧‧ gas exhaust pipe

89‧‧‧ valve

120‧‧‧radiation thermometer

130‧‧‧Contact thermometer

185‧‧‧ gate valve

190‧‧‧Exhaust Department

191‧‧‧ gas exhaust pipe

192‧‧‧ valve

611‧‧‧ slot

FL‧‧‧Flash

HL‧‧‧ halogen lamp

W‧‧‧Semiconductor Wafer

‧‧‧‧ angle

Fig. 1 is a longitudinal sectional view showing the configuration of a heat treatment apparatus of the present invention.

Fig. 2 is a perspective view showing the overall appearance of the holding portion.

Fig. 3 is a plan view of the holding portion as viewed from the upper surface.

Fig. 4 is a side view of the holding portion viewed from the side.

Figure 5 is a plan view of the transfer mechanism.

Figure 6 is a side view of the transfer mechanism.

Fig. 7 is a plan view showing the arrangement of a plurality of halogen lamps.

Fig. 8 is a partially enlarged view showing the configuration of the periphery of the sealing portion of the chamber.

Figure 9 is an enlarged view of a plurality of grooves formed in the upper chamber window.

Fig. 10 is a view showing the structure of the peripheral portion of the upper side chamber window of the third embodiment.

Fig. 11 is a view showing the structure of the peripheral portion of the upper side chamber window of the fourth embodiment.

Fig. 12 is a view showing the structure of the peripheral portion of the upper side chamber window of the fifth embodiment.

Fig. 13 is a view showing the structure of the peripheral portion of the upper side chamber window of the sixth embodiment.

Fig. 14 is a view showing an example of the structure of the peripheral portion of the upper side chamber window of the eighth embodiment.

Fig. 15 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the eighth embodiment; Figure.

Fig. 16 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the eighth embodiment.

Fig. 17 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the eighth embodiment.

Fig. 18 is a view showing an example of the structure of the peripheral portion of the upper side chamber window of the ninth embodiment.

Fig. 19 is a view showing another example of the structure of the peripheral portion of the upper chamber window of the ninth embodiment.

Fig. 20 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the ninth embodiment.

Fig. 21 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the ninth embodiment.

Fig. 22 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the ninth embodiment.

Fig. 23 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the ninth embodiment.

Fig. 24 is a view showing another example of the structure of the peripheral portion of the upper side chamber window of the ninth embodiment.

Fig. 25 is a view showing another example of the structure of the peripheral portion of the upper chamber window of the ninth embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First embodiment>

Fig. 1 is a longitudinal sectional view showing the configuration of a heat treatment apparatus 1 of the present invention. The heat treatment apparatus 1 of the present embodiment is used as a substrate A 300 mm disk-shaped semiconductor wafer W is subjected to flash light irradiation to heat the semiconductor wafer W to a flash lamp annealing apparatus. Furthermore, in each of FIG. 1 and subsequent figures, the size or number of each part is exaggerated or simplified as needed for easy understanding.

The heat treatment apparatus 1 includes a chamber 6 that houses a semiconductor wafer W, a flash heating unit 5 that incorporates a plurality of flash lamps FL, and a halogen heating unit 4 that incorporates a plurality of halogen lamps HL. A flash heating portion 5 is provided on the upper side of the chamber 6, and a halogen heating portion 4 is provided on the lower side. Further, the heat treatment apparatus 1 is provided inside the chamber 6 with a holding portion 7 that holds the semiconductor wafer W in a horizontal posture, and a transfer mechanism 10 that performs a semiconductor wafer W between the holding portion 7 and the outside of the device. The handover. Further, the heat treatment apparatus 1 includes a control unit 3 that controls the halogen heating unit 4, the flash heating unit 5, and the respective operation mechanisms provided in the chamber 6, and performs heat treatment of the semiconductor wafer W.

The chamber 6 is configured by mounting a quartz chamber window above and below the cylindrical chamber side portion 61. The chamber side portion 61 has a substantially cylindrical shape with an upper and lower opening. The upper side chamber window 63 is closed to the upper opening, and the lower side chamber window 64 is closed to the lower side. The upper chamber window 63 constituting the top wall of the chamber 6 is a disk-shaped member formed of quartz, and functions as a quartz window that transmits the strobe light emitted from the flash heating portion 5 into the chamber 6. Further, the bottom chamber window 64 constituting the bottom portion of the chamber 6 is also a disk-shaped member formed of quartz, and functions as a quartz window that transmits light from the halogen heating portion 4 into the chamber 6.

The heat treatment apparatus 1 of the present embodiment is a device that handles vacuum, and the chamber 6 is also a vacuum-resistant pressure-resistant structure. Specifically, the upper chamber window 63 and the lower chamber window 64 are thicker than the conventional flash-annealing device for normal pressure (for example, 20 mm or more). Further, the chamber 6 is sealed by sandwiching an O-ring between the upper chamber window 63 and the lower chamber window 64 and the chamber side portion 61, and this will be described later.

A reflection ring 68 is attached to the upper surface of the inner side of the chamber side portion 61, and a reflection ring 69 is attached to the lower portion. The reflection rings 68, 69 are each formed in an annular shape. The upper side of the reflection ring 68 is borrowed It is fitted by being fitted from the upper side of the chamber side portion 61. On the other hand, the lower reflection ring 69 is fitted from the lower side of the chamber side portion 61 and fixed by a screw (not shown). In other words, the reflection rings 68 and 69 are detachably attached to the chamber side portion 61. The space inside the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side portion 61, and the reflection rings 68, 69 is defined as the heat treatment space 65.

A concave portion 62 is formed on the inner wall surface of the chamber 6 by providing the reflection rings 68, 69 on the chamber side portion 61. That is, the concave portion 62 surrounded by the central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68, 69 are not provided, the lower end surface of the reflection ring 68, and the upper end surface of the reflection ring 69 are formed. The concave portion 62 is formed in an annular shape in the horizontal direction on the inner wall surface of the chamber 6, and surrounds the holding portion 7 that holds the semiconductor wafer W.

The chamber side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) excellent in strength and heat resistance. Further, the inner peripheral surfaces of the reflection rings 68 and 69 are mirror-finished by electrolytic nickel plating.

Further, a transfer opening portion (furnace port) 66 for carrying in and carrying out the semiconductor wafer W with respect to the chamber 6 is formed in the chamber side portion 61. The conveyance opening 66 is opened and closed by the gate valve 185. The conveyance opening 66 is connected and connected to the outer circumferential surface of the recess 62. Therefore, when the gate opening 185 opens the transfer opening portion 66, the semiconductor wafer W can be carried into the heat treatment space 65 through the recess 62 from the transfer opening portion 66, and the semiconductor wafer W can be carried out from the heat treatment space 65. Moreover, when the gate valve 185 closes the conveyance opening 66, the heat treatment space 65 in the chamber 6 becomes a sealed space.

Further, a gas supply hole 81 for supplying a processing gas to the heat treatment space 65 is formed in an upper portion of the inner wall of the chamber 6. The gas supply hole 81 is formed to be disposed above the recess 62 and may be provided on the reflection ring 68. The gas supply hole 81 is connected and connected to the gas supply pipe 83 via a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to the gas supply source 85. Further, a valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, the processing gas is supplied from the gas supply source 85 to the buffer space 82. The processing gas that has flowed into the buffer space 82 flows in the buffer space 82 having a smaller fluid resistance than the gas supply hole 81, and is supplied from the gas supply hole 81 into the heat treatment space 65. As the processing gas, an inert gas such as argon (Ar), helium (He), or nitrogen (N ₂ ) or oxygen (O ₂ ), hydrogen (H ₂ ), chlorine (Cl ₂ ), or hydrogen chloride gas (HCl) may be used. , ozone (O _3), ammonia (NH ₃₎ and other reactive gas.

On the other hand, a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the chamber 6. The gas exhaust hole 86 is formed to be disposed at a lower position than the concave portion 62 or may be provided on the reflection ring 69. The gas exhaust hole 86 is connected and connected to the gas exhaust pipe 88 via a buffer space 87 formed in a ring shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust portion 190. Further, a valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 via the buffer space 87. Further, the gas supply hole 81 and the gas exhaust hole 86 may be provided in plural numbers in the circumferential direction of the chamber 6, or may be slit-like.

The exhaust unit 190 is provided with a vacuum pump. The valve 84 is closed without supplying gas to the heat treatment space 65, and the exhaust portion 190 is actuated to open the valve 89, whereby the gas in the heat treatment space 65 can be discharged to decompress the heat treatment space 65 to a vacuum of less than atmospheric pressure. On the other hand, when the valve 84 is opened and the processing gas is supplied to the heat treatment space 65, and the exhaust portion 190 is actuated to open the valve 89, the environment of the heat treatment space 65 can be replaced.

Further, a gas exhaust pipe 191 for discharging the gas in the heat treatment space 65 is also connected to the front end of the conveyance opening portion 66. The gas exhaust pipe 191 is connected to the exhaust portion 190 via a valve 192. The gas in the chamber 6 is exhausted through the transfer opening portion 66 by opening the valve 192.

FIG. 2 is a perspective view showing the overall appearance of the holding portion 7. 3 is a plan view of the holding portion 7 as viewed from the upper surface, and FIG. 4 is a side view of the holding portion 7 as viewed from the side. The holding portion 7 is configured to include a base ring 71, a coupling portion 72, and a base 74. The base ring 71, the connecting portion 72, and the pedestal 74 are each formed of quartz. That is, the entire holding portion 7 is formed of quartz.

The abutment ring 71 is a ring-shaped quartz member. The abutment ring 71 is supported by the wall surface of the chamber 6 by being placed on the bottom surface of the recess 62 (see Fig. 1). On the upper surface of the abutment ring 71 having a circular ring shape, a plurality of connecting portions 72 (four in the present embodiment) are erected along the circumferential direction thereof. The connecting portion 72 is also a member of quartz and is fixed to the base ring 71 by welding. Further, the shape of the abutment ring 71 may be an arc shape which is a part of the ring shape defect.

The flat base 74 is supported by four joint portions 72 provided on the base ring 71. The susceptor 74 is a substantially circular flat member formed of quartz. The diameter of the susceptor 74 is larger than the diameter of the semiconductor wafer W. That is, the pedestal 74 has a larger planar size than the semiconductor wafer W. A plurality of (five in the present embodiment) guide pins 76 are erected on the upper surface of the base 74. The five guide pins 76 are provided along a circumference concentric with the outer circumference of the base 74. The diameter of the circle in which the five guide pins 76 are disposed is slightly larger than the diameter of the semiconductor wafer W. Each of the guide pins 76 is also formed of quartz. Further, the guide pin 76 may be integrally molded from the quartz ingot with the susceptor 74, or may be attached to the susceptor 74 by welding or the like.

The four connecting portions 72 that are erected on the base ring 71 and the lower surface of the peripheral portion of the base 74 are fixed by welding. That is, the base 74 and the base ring 71 are fixedly coupled by the connecting portion 72, and the holding portion 7 serves as a quartz bulk forming member. The base ring 71 of such a holding portion 7 is supported by the wall surface of the chamber 6, whereby the holding portion 7 is attached to the chamber 6. In a state in which the holding portion 7 is attached to the chamber 6, the substantially disk-shaped susceptor 74 has a horizontal posture (a posture in which the normal line and the vertical direction coincide with each other). The semiconductor wafer W carried into the chamber 6 is placed and held in a horizontal posture on the susceptor 74 mounted on the holding portion 7 of the chamber 6. The semiconductor wafer W is placed on the inner side of the circle formed by the five guide pins 76, whereby the positional deviation in the horizontal direction can be prevented. Further, the number of the guide pins 76 is not limited to five, as long as the number of positions of the semiconductor wafer W can be prevented from shifting.

Further, as shown in FIGS. 2 and 3, the base 74 is vertically penetrated to form an opening 78 and a notch portion 77. The cutout portion 77 is a probe for the contact thermometer 130 for using a thermocouple. The tip end of the needle is passed through. On the other hand, the opening portion 78 is provided for the radiation thermometer 120 to receive the emitted light (infrared light) radiated from the lower surface of the semiconductor wafer W held by the susceptor 74. Further, the base 74 is provided with four through holes 79 through which the jacking pins 12 of the transfer mechanism 10 described below are inserted to transfer the semiconductor wafer W.

FIG. 5 is a plan view of the transfer mechanism 10. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11 . The transfer arm 11 is formed in an arc shape such as along a substantially annular recess 62. Two jacking pins 12 are erected on each of the transfer arms 11 . Each of the transfer arms 11 is rotatable by the horizontal movement mechanism 13. The horizontal moving mechanism 13 causes the pair of transfer arms 11 to perform a transfer operation position (solid line position in FIG. 5) for transferring the semiconductor wafer W with respect to the holding portion 7, and a semiconductor wafer held in the holding portion 7. W horizontally moves between the retracted positions (the two-point chain line positions in Fig. 5) that are not repeated in plan view. As the horizontal moving mechanism 13, each of the transfer arms 11 may be individually rotated by an individual motor, or a pair of transfer arms 11 may be rotated by one motor using a link mechanism. By.

Further, the pair of transfer arms 11 are moved up and down together with the horizontal movement mechanism 13 by the elevating mechanism 14. When the elevating mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, the total of four jacking pins 12 pass through the through holes 79 (see FIGS. 2 and 3) provided in the susceptor 74, and the pins 12 are jacked up. The upper end protrudes from the upper surface of the base 74. On the other hand, when the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position and the ejector pin 12 is pulled out from the through hole 79, the horizontal movement mechanism 13 moves the pair of transfer arms 11 in an open manner. Then, each of the transfer arms 11 is moved to the retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holding portion 7. Since the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arm 11 becomes the inside of the recess 62. Further, an exhaust mechanism (not shown) and a gas surrounding the drive unit of the transfer mechanism 10 are provided in the vicinity of a portion where the drive unit (horizontal movement mechanism 13 and the elevating mechanism 14) of the transfer mechanism 10 is provided. It is discharged to the outside of the chamber 6.

Returning to Fig. 1, the flash heating portion 5 disposed outside the chamber 6 and above the chamber 6 is attached to the inner side of the casing 51, and is provided with a plurality of (30 in this embodiment) xenon flashes. The light source of the lamp FL and the reflector 52 provided to cover the light source are formed. Further, a light radiation window 53 is attached to the bottom of the casing 51 of the flash heating unit 5. The light radiation window 53 constituting the bottom of the flash heating portion 5 is a plate-shaped quartz window formed of quartz. By arranging the flash heating portion 5 above the chamber 6, the light radiation window 53 is opposed to the upper chamber window 63. The flash lamp FL irradiates the heat treatment space 65 with the flash light from above the chamber 6 via the light emission window 53 and the upper chamber window 63.

The plurality of flash lamps FL each have a long cylindrical rod-shaped lamp, and are parallel to each other along the longitudinal direction of each of the semiconductor wafers W held by the holding portion 7 (that is, along the horizontal direction). The manner is arranged in a planar manner. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

The xenon flash lamp FL has a rod-shaped glass tube (discharge tube) to which an anode and a cathode connected to the capacitor are disposed at both ends thereof, and a trigger attached to the outer peripheral surface of the glass tube electrode. Since the helium gas is an electrical insulator, even if a charge is accumulated in the capacitor, electricity does not flow in the glass tube in a normal state. However, when a high voltage is applied to the trigger electrode to break the insulation, the electric charge accumulated in the capacitor instantaneously flows in the glass tube, and the light is emitted by the excitation of the atom or molecule at that time. In such a xenon flash lamp FL, the electrostatic energy accumulated in advance in the capacitor is converted into a very short light pulse of 0.1 millisecond to 100 milliseconds, and thus has a strong illumination compared with a light source continuously lit like a halogen lamp HL. The characteristics of light. That is, the flasher FL is a pulsed light that emits light instantaneously in a very short time of less than one second. Further, the lighting time of the flash lamp FL can be adjusted in accordance with the coil constant of the lamp power supply for supplying power to the flash lamp FL.

Further, the reflector 52 is disposed above the plurality of flash lamps FL to cover the entirety thereof. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL to the side of the heat treatment space 65. The reflector 52 is formed of an aluminum alloy plate, and its surface (the surface facing the side of the flash lamp FL) is roughened by sandblasting.

a halogen heating portion 4 disposed outside the chamber 6 and below the chamber 6 within the housing 41 A plurality of (40 in the present embodiment) halogen lamps HL are built in the side. The halogen heating unit 4 is a light irradiation unit that heats the semiconductor wafer W by halogen light irradiation from the lower side of the chamber 6 to the heat treatment space 65 via the lower chamber window 64 by a plurality of halogen lamps HL.

Fig. 7 is a plan view showing the arrangement of a plurality of halogen lamps HL. A plurality of halogen lamps HL are disposed in a region wider than the main surface of the semiconductor wafer W (that is, a circle having a diameter of 300 mm) held in the disk shape of the holding portion 7. Further, a plurality of halogen lamps HL are disposed in a region facing the lower surface of the main surface of the semiconductor wafer W.

As shown in FIGS. 1 and 7, 40 halogen lamps HL are arranged in two stages. 20 halogen lamps HL are disposed in the upper portion of the holding portion 7, and 20 halogen lamps HL are disposed in the lower portion of the upper portion away from the holding portion 7. Each of the halogen lamps HL is a rod-shaped lamp having a long cylindrical shape. In the upper stage and the lower stage, 20 halogen lamps HL are arranged in parallel with each other along the longitudinal direction of each of the semiconductor wafers W held by the holding portion 7 (that is, in the horizontal direction). Therefore, the upper and lower sections are each formed by the arrangement of the halogen lamps HL as a horizontal plane.

Further, as shown in Fig. 7, the upper stage and the lower stage are disposed in comparison with the area facing the central portion of the semiconductor wafer W held by the holding portion 7, and the halogen lamp HL in the region facing the peripheral portion. The density becomes higher. That is, both the upper and lower sections are shorter than the central portion of the lamp array, and the arrangement of the halogen lamps HL at the peripheral portion is short. Therefore, it is possible to irradiate a peripheral portion of the semiconductor wafer W which is likely to cause a temperature drop to be irradiated with more light by heating by the light from the halogen heating unit 4.

Further, the lamp group including the halogen lamp HL of the upper stage and the lamp group including the halogen lamp HL of the lower stage are arranged in a lattice-like manner. In other words, a total of 40 halogen lamps HL are disposed so that the longitudinal direction of the 20 halogen lamps HL disposed in the upper stage and the longitudinal direction of the 20 halogen lamps HL disposed in the lower stage are orthogonal to each other.

The halogen lamp HL is a filament-type light source that emits light by incanding the filament by energizing a filament disposed inside the glass tube. Inside the glass tube, the halogen element is enclosed (Iodine, bromine, etc.) is a gas obtained by introducing a trace amount into an inert gas such as nitrogen or argon. By introducing a halogen element, it is possible to set the temperature of the filament to a high temperature while suppressing the breakage of the filament. Therefore, the halogen lamp HL has a characteristic that it has a longer life than that of a conventional incandescent bulb and can continuously irradiate a strong light. That is, the halogen lamp HL is a continuous lighting lamp that continuously emits light for at least 1 second. In addition, since the halogen lamp HL has a long life due to the rod-shaped lamp, the halogen lamp HL is disposed in the horizontal direction, and the semiconductor wafer W is superior in radiation efficiency.

Further, in the casing 41 of the halogen heating unit 4, a reflector 43 (Fig. 1) is also provided on the lower side of the halogen lamps HL of the two stages. The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the side of the heat treatment space 65.

Fig. 8 is a partially enlarged view showing the configuration of the periphery of the sealing portion of the chamber 6. In order to maintain the airtightness of the heat treatment space 65 in the chamber 6, the upper chamber window 63 and the chamber side portion 61 are sealed by the O-ring 21. The O-ring 21 is formed of a resin excellent in heat resistance (for example, Viton (registered trademark) in white). An annular groove 611 is formed in the upper end of the substantially cylindrical chamber side portion 61, and the O-ring 21 is fitted into the groove 611. The diameter of the cross section of the O-ring 21 is larger than the depth of the groove 611. Further, after the O-ring 21 is fitted into the groove 611, the upper chamber window 63 is placed from above and pressed against the O-ring 21. Further, the clamp ring 67 (corresponding to the window pressing member) abuts against the peripheral edge portion of the upper surface of the upper chamber window 63, and the clamp ring 67 is screwed to the chamber side portion 61, whereby the upper chamber window 63 is made. The peripheral edge portion is pressed from the upper side toward the upper end portion of the chamber side portion 61, and an O-ring 21 is interposed between the peripheral edge portion of the lower surface of the upper chamber window 63 and the upper end portion of the chamber side portion 61 to be in close contact with each other. The upper side opening of the chamber 6 is sealed by the O-ring 21 by pressing the upper side chamber window 63 with the clamp ring 67. The clamp ring 67 is formed of aluminum which is excellent in resistance to flash light from the flash lamp FL. Further, similarly to the upper opening, the opening on the lower side of the chamber 6 is also sealed by sandwiching an O-ring (not shown) between the lower chamber window 64 and the chamber side portion 61.

In the first embodiment, the surface of the peripheral portion of the upper chamber window 63 is grooved and a plurality of grooves 22 are formed. Specifically, the lower surface of the peripheral portion of the upper chamber window 63 (i.e., the contact surface in contact with the O-ring 21) is engraved with a plurality of grooves 22, and on the upper surface of the peripheral portion of the upper chamber window 63 (i.e., facing the opposite side to the contact) A plurality of slots 22 are also engraved. Further, the surface of the peripheral portion of the upper chamber window 63 includes the upper surface (opposing surface), the lower surface (contact surface), and the side surface (the end surface on the left side of the paper surface of FIG. 8) of the peripheral portion.

The plurality of grooves 22 may be formed on the entire surface of the contact surface and the opposing surface of the peripheral portion of the upper chamber window 63, but it is not necessarily required to be formed in at least a part of the region. For processing In the present embodiment of the 300 mm semiconductor wafer W, for example, a plurality of grooves 22 are formed in an annular band-shaped region having a radius of 215 mm to 260 mm on the upper surface and the lower surface of the upper chamber window 63. However, it is preferable that the groove 22 is not formed in a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 at least. That is, it is preferable that a plurality of grooves 22 are formed in a region other than a portion in contact with the O-ring 21 in the contact surface of the peripheral portion of the upper chamber window 63. The reason for this is that if the groove 22 is formed in the contact surface of the upper chamber window 63 in contact with the O-ring 21, the sealing property is impaired. In addition, the size and shape of the groove in the portion in contact with the O-ring 21 may be the same as the curved surface of the O-ring 21 to ensure the sealing property, and then the contact surface of the peripheral portion of the upper chamber window 63 may be used. The portion in contact with the O-ring 21 also forms a groove.

FIG. 9 is an enlarged view of a plurality of grooves 22 formed in the upper chamber window 63. Each of the plurality of grooves 22 is formed in a contact surface and a facing surface of the peripheral portion of the upper chamber window 63 so as to have an annular shape having a right-angled triangular cross section. In the present embodiment, each of the grooves 22 is formed such that the angle α formed by one of the right-angled triangles of the cross section and the horizontal plane is 60°. Further, the size (depth) of each of the plurality of grooves 22 can be set as appropriate.

Returning to Fig. 1, the control unit 3 controls the various operation mechanisms provided in the heat treatment apparatus 1. The hardware of the control unit 3 is the same as that of a normal computer. In other words, the control unit 3 includes a CPU (Central Processing Unit) which is a circuit for performing various kinds of arithmetic processing, and a ROM which is a memory for reading the basic memory program (Read Only) Memory, read-only memory, memory that reads and writes various kinds of information, such as RAM (Random Access Memory) and memory control software or data. The processing in the heat treatment apparatus 1 is performed by the CPU of the control unit 3 executing a specific processing program.

In addition to the above configuration, the heat treatment apparatus 1 prevents an excessive temperature rise of the halogen heating portion 4, the flash heating portion 5, and the chamber 6 due to thermal energy generated from the halogen lamp HL and the flash lamp FL during heat treatment of the semiconductor wafer W. It also has various structures for cooling. For example, a water-cooling pipe (not shown) is provided in the wall of the chamber 6. Thereby, the O-ring 21 embedded in the groove 611 of the chamber side portion 61 is also cooled. Further, the halogen heating unit 4 and the flash heating unit 5 are air-cooling structures in which a gas flow is formed inside to discharge heat. Further, air is supplied to the gap between the upper chamber window 63 and the light radiation window 53, and the flash heating portion 5 and the upper chamber window 63 are cooled.

Next, the processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 having the above configuration will be briefly described. The type of the semiconductor wafer W to be processed in the heat treatment apparatus 1 of the present embodiment is not particularly limited, and for example, an Hf-based high dielectric constant gate insulating film (hig-k film) is formed on the surface. The processing sequence of the heat treatment apparatus 1 described below is performed by the control unit 3 controlling each of the operation mechanisms of the heat treatment apparatus 1.

First, the valve 84 for supplying air is opened, and the valves 89, 192 for exhaust are opened to start supply/exhaust with respect to the inside of the chamber 6. When the valve 84 is opened, nitrogen gas is supplied to the heat treatment space 65 from the gas supply hole 81. Further, when the valve 89 is opened, the gas in the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the nitrogen gas supplied from the upper portion of the heat treatment space 65 in the chamber 6 flows downward and is exhausted from the lower portion of the heat treatment space 65, and the heat treatment space 65 is replaced with a nitrogen atmosphere. Further, by opening the valve 192, the gas in the chamber 6 is also exhausted from the transfer opening portion 66. Further, the gas around the driving portion of the transfer mechanism 10 is also exhausted by omitting the exhaust mechanism shown.

Then, the gate valve 185 is opened to open the transfer opening portion 66, and is moved by the outside of the device. The robot sends the semiconductor wafer W to be processed into the heat treatment space 65 in the chamber 6 via the transfer opening 66. The semiconductor wafer W carried in by the transfer robot enters the position immediately above the holding portion 7 and is stopped. Then, one of the transfer mechanisms 10 raises the transfer arm 11 from the retracted position horizontally to the transfer operation position, whereby the jacking pin 12 protrudes from the upper surface of the base 74 through the through hole 79 to receive the semiconductor wafer. W.

After the semiconductor wafer W is placed on the ejector pin 12, the transfer robot is withdrawn from the heat treatment space 65, and the transfer opening portion 66 is closed by the gate valve 185. Then, by the lowering of the pair of transfer arms 11, the semiconductor wafer W is delivered from the transfer mechanism 10 to the susceptor 74 of the holding portion 7, and is held from below in a horizontal posture. Further, the semiconductor wafer W is held inside the five guide pins 76 on the upper surface of the susceptor 74. The lowering of one of the lower ends of the susceptor 74 to the transfer arm 11 is retracted to the retracted position by the horizontal movement mechanism 13, that is, the inside of the recess 62. After the semiconductor wafer W is carried into the chamber 6 and the transfer opening portion 66 is closed, the exhaust portion 190 is kept in a state of being actuated, and the valve 84 is closed to depressurize the heat treatment space 65 to a pressure less than atmospheric pressure. Thereafter, a reactive gas such as ammonia gas is supplied from the gas supply source 85 to the heat treatment space 65.

After the semiconductor wafer W is held from below by the holding portion 7 made of quartz in a horizontal posture, the 40 halogen lamps HL of the halogen heating unit 4 are collectively lit to start preliminary heating (auxiliary heating). The halogen light emitted from the halogen lamp HL is irradiated from the back surface of the semiconductor wafer W through the lower side chamber window 64 and the susceptor 74 formed of quartz. By receiving light irradiation from the halogen lamp HL, the semiconductor wafer W is preheated and the temperature rises. Further, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the concave portion 62, it does not become an obstacle to heating by the halogen lamp HL.

When the preliminary heating is performed by the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the contact thermometer 130. That is, the contact thermometer 130 with the built-in thermocouple contacts the lower surface of the semiconductor wafer W held by the holding portion 7 via the notch portion 77 of the susceptor 74, and measures the temperature of the wafer during temperature rise. The temperature of the semiconductor wafer W thus measured is transmitted to the control unit 3. The control unit 3 monitors the semiconductor wafer heated by the light from the halogen lamp HL Whether the temperature of W reaches a specific preliminary heating temperature T1. The preliminary heating temperature T1 is about 200 ° C to 800 ° C, preferably about 350 ° C to 600 ° C (600 ° C in the present embodiment), in which impurities which are not added to the semiconductor wafer W are diffused by heat. Further, when the semiconductor wafer W is heated by the light from the halogen lamp HL, the temperature is not measured by the radiation thermometer 120. This is because the halogen light irradiated from the halogen lamp HL is incident on the radiation thermometer 120 as ambient light, and accurate temperature measurement cannot be performed.

After the temperature of the semiconductor wafer W reaches the preliminary heating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preliminary heating temperature T1. Specifically, the control unit 3 feedback-controls the output of the halogen lamp HL such that the temperature of the semiconductor wafer W measured by the contact thermometer 130 maintains the preliminary heating temperature T1.

By performing such preparatory heating by the halogen lamp HL, the entire semiconductor wafer W is uniformly heated to the preliminary heating temperature T1. In the stage of preliminary heating by the halogen lamp HL, the temperature of the peripheral portion of the semiconductor wafer W which is more likely to cause heat dissipation tends to decrease from the central portion, but the arrangement density of the halogen lamp HL in the halogen heating portion 4 is The region facing the peripheral portion becomes higher than the region opposed to the central portion of the semiconductor wafer W. Therefore, the amount of light irradiated to the peripheral portion of the semiconductor wafer W which is likely to cause heat dissipation is increased, and the in-plane temperature distribution of the semiconductor wafer W in the preliminary heating stage can be made uniform. Further, since the inner circumferential surface of the reflection ring 69 attached to the chamber side portion 61 is mirror-finished, the amount of light reflected toward the peripheral portion of the semiconductor wafer W by the inner circumferential surface of the reflection ring 69 is increased. The in-plane temperature distribution of the semiconductor wafer W in the preliminary heating stage can be made more uniform.

The flash lamp FL of the flash heating unit 5 illuminates the surface of the semiconductor wafer W with strobe light at a point in time after a predetermined time elapses after the temperature of the semiconductor wafer W reaches the preliminary heating temperature T1. At this time, one part of the flash light emitted from the flash lamp FL is directly incident into the chamber 6, and the other part is temporarily reflected by the reflector 52 and then directed into the chamber 6, and the semiconductor wafer W is irradiated by the flash light. The flash is heated.

Since the flash heating is illuminated by the flash light (flash) from the flash FL This allows the surface temperature of the semiconductor wafer W to rise in a short time. In other words, the flash light emitted from the flash lamp FL is an extremely short and strong flash in which the irradiation time of the electrostatic energy stored in the capacitor is converted into an extremely short light pulse of about 0.1 milliseconds or more and 100 milliseconds or less. Further, the surface temperature of the semiconductor wafer W heated by the flash light from the flash lamp FL is instantaneously increased to a processing temperature T2 of 1000 ° C or higher, and then rapidly drops.

After the end of the flash heat treatment, the halogen lamp HL is extinguished after a lapse of a certain time. Thereby, the semiconductor wafer W is rapidly cooled from the preliminary heating temperature T1. The temperature of the semiconductor wafer W during cooling is measured by the contact thermometer 130 or the radiation thermometer 120, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether or not the temperature of the semiconductor wafer W is lowered to a specific temperature based on the measurement result. Further, after the temperature of the semiconductor wafer W is cooled to a specific temperature or lower, one of the transfer mechanisms 10 moves the transfer arm 11 horizontally from the retracted position to the transfer operation position and rises, whereby the jack 12 is lifted from the base. The upper surface of the protrusion 74 is 74 and receives the heat-treated semiconductor wafer W from the susceptor 74. Then, the transfer opening portion 66 closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the ejector pin 12 is carried out by the transfer robot outside the device, and the semiconductor wafer W in the heat treatment device 1 is heat-treated. carry out. In the case where the semiconductor wafer W is subjected to heat treatment in a reactive gas atmosphere such as ammonia gas, it is preferable to open the transport opening portion 66 after replacing the heat treatment space 65 with a nitrogen atmosphere.

However, in the heat treatment apparatus 1, when the flash light is irradiated from the flash lamp FL, the flash light which is diffused and reflected on the inner wall surface of the chamber 6 sometimes enters the inside of the peripheral portion of the upper chamber window 63. In particular, in the heat treatment apparatus 1 of the present embodiment in which the vacuum is applied, since the thickness of the upper chamber window 63 and the lower chamber window 64 is thicker than that of the conventional flash lamp annealing apparatus for normal pressure, the flash light is irradiated. At the time of entering the peripheral portion of the upper chamber window 63, the amount of light of the flash light increases. Further, since the lower chamber window 64 is disposed on the opposite side of the semiconductor wafer W held by the holding portion 7 from the flash lamp FL, it is basically also applied when the flash light is irradiated. No flash light arrives.

When the special processing is not performed on the quartz side chamber window 63, the strobe light entering the peripheral portion of the upper chamber window 63 is repeatedly reflected by the surface of the peripheral portion and reaches the O-ring 21. If the O-ring 21 of the resin is exposed to strong flash light, not only the surface of the O-ring 21 is deteriorated but the airtightness in the chamber 6 is lowered, and the deteriorated O-ring 21 becomes a source of gas or particles. Hey.

Therefore, in the first embodiment, a plurality of grooves 22 are formed in the contact surface and the opposing surface of the peripheral portion of the upper chamber window 63. By arranging a plurality of grooves 22 on the contact surface and the opposite surface of the peripheral portion of the upper chamber window 63, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 during the strobe light irradiation is reflected by the plurality of grooves 22. Instead of being directed toward the O-ring 21, the amount of strobe light reaching the O-ring 21 is significantly reduced. That is, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the plurality of grooves 22 engraved on the surface of the peripheral portion of the upper chamber window 63. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation. Furthermore, in the present embodiment, the angle α formed by one side of the right-angled triangle of the cross section of the plurality of grooves 22 and the horizontal plane is 60°, but it is preferable to set the position of the plurality of grooves 22 or the upper chamber window. The size of 63 or the like is set to an appropriate angle α such that light entering the peripheral portion of the upper chamber window 63 does not strike the O-ring 21.

<Second embodiment>

Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus of the second embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the second embodiment is also the same as that in the first embodiment. The second embodiment differs from the first embodiment in that a plurality of grooves 22 of the first embodiment form a metal film to form a mirror surface.

In the second embodiment, a plurality of grooves 22 which are formed in the contact surface and the opposite surface of the peripheral portion of the upper chamber window 63 are formed by sputtering a metal film. Multiple slots 22 The form is the same as that of the first embodiment (see Figs. 8 and 9). As a material of the metal film, for example, chromium (Cr), nickel (Ni), or titanium (Ti) can be used. When each of the faces constituting the plurality of grooves 22 is a smooth surface, the interface between the metal film formed thereon and the groove 22 becomes a mirror surface.

By forming a mirror surface in the plurality of grooves 22, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 when the strobe light is irradiated is surely reflected by the plurality of grooves 22 without being incident on the O-ring 21, and is reached. The amount of flash light to the O-ring 21 is then significantly reduced. In other words, by forming a mirror surface by a plurality of grooves 22 formed on the surface of the peripheral portion of the upper chamber window 63, the strobe light entering the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is surely prevented from reaching to the O. Ring 21. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

<Third embodiment>

Next, a third embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus according to the third embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the third embodiment is also the same as that of the first embodiment. The third embodiment is different from the first embodiment in that a plurality of grooves 22 are formed on the surface of the peripheral portion of the upper chamber window 63 in the first embodiment, and the upper chamber is used in the third embodiment. A surface of the peripheral portion of the window 63 is formed with a mirror surface.

Fig. 10 is a view showing the structure of the peripheral portion of the upper chamber window 63 of the third embodiment. In FIG. 10, the same elements as those in the first embodiment (FIG. 8) are denoted by the same reference numerals. In the third embodiment, a metal film is formed on the contact surface (lower surface) of the peripheral portion of the upper chamber window 63 to form a mirror surface 23. The peripheral surface of the quartz upper side chamber window 63 is a smooth surface. A film of a metal film is formed on the smooth surface by sputtering, for example. The material of the formed metal film can be appropriately set, and for example, chromium (Cr), nickel (Ni), titanium (Ti), or the like can be used. However, it is not appropriate to use a metal material (for example, copper (Cu)) which is also used as a wiring material of the semiconductor wafer W to be processed. If a metal film is formed on the smooth surface of the peripheral portion of the upper chamber window 63, the metal film is formed. The interface with the peripheral portion becomes a mirror surface. In this way, the mirror surface 23 can be formed on the contact surface of the peripheral portion of the upper chamber window 63. The reflectance of the formed mirror surface 23 is 90% or more.

The mirror surface 23 does not necessarily need to be formed on the entire surface of the contact surface of the peripheral portion of the upper chamber window 63 as long as it is formed in a partial region including at least a portion in contact with the O-ring 21. Since the surface of the mirror surface 23 (the surface on the opposite side to the interface with the upper chamber window 63) is a smooth surface, the sealing property can be maintained even if the mirror surface 23 is formed at a portion in contact with the O-ring 21.

Since the mirror surface 23 is formed by the contact surface of the peripheral portion of the upper chamber window 63, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 when the strobe light is irradiated is reflected by the mirror surface 23 and is not incident on the O-ring 21, The amount of light of the flash light reaching the O-ring 21 is significantly reduced. In other words, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the mirror surface 23 formed on the surface of the peripheral portion of the upper chamber window 63. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

<Fourth embodiment>

Next, a fourth embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus of the fourth embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the fourth embodiment is also the same as that of the first embodiment. The fourth embodiment is different from the first embodiment in that a plurality of grooves 22 are formed on the surface of the peripheral portion of the upper chamber window 63 in the first embodiment, and the upper chamber is formed in the fourth embodiment. A surface of the peripheral portion of the chamber window 63 is formed with a mirror surface.

Fig. 11 is a view showing the structure of the peripheral portion of the upper chamber window 63 of the fourth embodiment. In FIG. 11, the same elements as those in the first embodiment (FIG. 8) are denoted by the same reference numerals. Similarly to the third embodiment, in the fourth embodiment, a metal film is formed on the surface of the peripheral portion of the upper chamber window 63 to form the mirror surface 23. In the third embodiment, only the contact surface of the peripheral portion of the upper chamber window 63 is formed into the mirror surface 23. In the fourth embodiment, the entire surface of the peripheral portion of the upper chamber window 63 is contacted. Face (lower surface), opposite surface (upper surface) And the end surface, the metal film is formed into a mirror surface 23. The peripheral surface of the quartz upper side chamber window 63 is a smooth surface. A film of a metal film is formed on the smooth surface by sputtering, for example. The material of the metal film to be formed can be appropriately set as in the third embodiment. When a metal film is formed on the smooth surface of the peripheral portion of the upper chamber window 63, the interface between the metal film and the peripheral portion becomes a mirror surface. In this manner, the mirror surface 23 can be formed on the contact surface, the opposing surface, and the end surface of the peripheral portion of the upper chamber window 63. In other words, in the mirror surface 23 of the fourth embodiment, a metal film is formed on the opposing surface and the end surface of the peripheral portion of the upper chamber window 63 in addition to the third embodiment. The reflectance of the formed mirror surface 23 is 90% or more.

The mirror surface 23 does not necessarily need to be formed on the entire surface of the contact surface, the opposite surface, and the end surface of the peripheral portion of the upper chamber window 63, and may be formed in a partial region including at least a portion in contact with the O-ring 21.

Since the mirror surface 23 is formed by the contact surface, the opposite surface, and the end surface of the peripheral portion of the upper chamber window 63, the strobe light entering the peripheral portion of the upper chamber window 63 during the strobe light irradiation is reflected by the mirror surface 23 and then returned again. To the heat treatment space 65. As a result, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 does not illuminate the O-ring 21, and the amount of strobe light reaching the O-ring 21 is remarkably reduced. In other words, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the mirror surface 23 formed on the surface of the peripheral portion of the upper chamber window 63. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

<Fifth Embodiment>

Next, a fifth embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus according to the fifth embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the fifth embodiment is also the same as that of the first embodiment. The fifth embodiment is different from the first embodiment in that a plurality of grooves 22 are formed on the surface of the peripheral portion of the upper chamber window 63 in the first embodiment, and the upper chamber is formed in the fifth embodiment. Room window 63 The surface of the peripheral portion is formed with a rough surface.

Fig. 12 is a view showing the structure of the peripheral portion of the upper chamber window 63 of the fifth embodiment. In FIG. 12, the same elements as those in the first embodiment (FIG. 8) are denoted by the same reference numerals. In the fifth embodiment, the contact surface (lower surface) of the peripheral portion of the upper chamber window 63 is sandblasted to form a rough surface 24. Specifically, a sandblasting process in which fine particles are mixed in compressed air is blown to a contact surface of a peripheral portion of the upper chamber window 63, and surface grinding is performed on the contact surface. A rough surface 24 is formed. The rough surface 24 formed has, for example, a transmittance of 25% and a scattering reflectance of 75%.

The rough surface 24 does not necessarily need to be formed on the entire surface of the contact surface of the peripheral portion of the upper chamber window 63, and may be formed in at least a part of the area. However, it is preferable that the rough surface 24 is not formed at a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 at least. That is, it is preferable that the rough surface 24 is formed in a region other than the portion in contact with the O-ring 21 in the contact surface of the peripheral portion of the upper chamber window 63. This is because if the rough surface 24 is formed in the contact surface of the upper chamber window 63 in contact with the O-ring 21, the sealing property is impaired. Further, the roughness of the rough surface 24 formed by the grit blasting of the portion of the contact surface of the peripheral portion of the upper chamber window 63 which is in contact with the O-ring 21 can be made thinner than other portions to ensure the sealing property. .

By forming the rough surface 24 by the contact surface of the peripheral portion of the upper chamber window 63, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 when the strobe light is irradiated is scattered by the rough surface 24 without being directed toward the O-ring. 21, and the amount of light of the flash light reaching the O-ring 21 is significantly reduced. That is, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the rough surface 24 formed on the surface of the peripheral portion of the upper chamber window 63. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

<Sixth embodiment>

Next, a sixth embodiment of the present invention will be described. The heat of the sixth embodiment The overall configuration of the processing apparatus is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the sixth embodiment is also the same as that in the first embodiment. The sixth embodiment is different from the first embodiment in that a plurality of grooves 22 are formed on the surface of the peripheral portion of the upper chamber window 63 in the first embodiment, and the upper chamber is formed in the sixth embodiment. A surface of the peripheral portion of the chamber window 63 is formed with a rough surface.

Fig. 13 is a view showing the structure of the peripheral portion of the upper chamber window 63 of the sixth embodiment. In FIG. 13, the same elements as those in the first embodiment (FIG. 8) are denoted by the same reference numerals. In the sixth embodiment, the opposing surface (upper surface) of the peripheral portion of the upper chamber window 63 is sandblasted to form a rough surface 24. Specifically, by performing a sandblasting process in which the microparticles are mixed in the compressed air, for example, by blowing the opposite surface of the peripheral portion of the upper chamber window 63, the surface is ground on the opposing surface. A rough surface 24 is formed on the opposite surface. The rough surface 24 formed has, for example, a transmittance of 25% and a scattering reflectance of 75%. The rough surface 24 does not necessarily need to be formed on the entire surface of the opposite surface of the peripheral portion of the upper chamber window 63, and may be formed in at least a part of the area.

By forming the rough surface 24 by the opposing surface of the peripheral portion of the upper chamber window 63, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 when the strobe light is irradiated is scattered by the rough surface 24 without being directed toward the O shape. The ring 21 causes the amount of light of the flash light reaching the O-ring 21 to be significantly reduced. That is, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the rough surface 24 formed on the surface of the peripheral portion of the upper chamber window 63. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

<Seventh embodiment>

Next, a seventh embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus according to the seventh embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the seventh embodiment is also the same as in the first embodiment. The seventh embodiment is different from the first embodiment in that it is replaced by the circumference of the upper chamber window 63 in the first embodiment. In the seventh embodiment, a plurality of grooves 22 are formed in the surface of the edge portion, and a rough surface is formed on the surface of the peripheral portion of the upper chamber window 63 in the seventh embodiment.

In the seventh embodiment, the contact surface (lower surface) and the opposite surface (upper surface) of the peripheral portion of the upper chamber window 63 are sandblasted to form a rough surface 24. In other words, the formation region of the rough surface 24 in the seventh embodiment is a combination of the fifth embodiment and the sixth embodiment. The method of sand blasting in the seventh embodiment is also the same as in the fifth and sixth embodiments.

By forming the rough surface 24 by the contact surface and the opposite surface of the peripheral portion of the upper chamber window 63, the strobe light entering the inside of the peripheral portion of the upper chamber window 63 when the strobe light is irradiated is scattered by the rough surface 24 without being shot. To the O-ring 21, the amount of light of the strobe light reaching the O-ring 21 is significantly reduced. That is, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the rough surface 24 formed on the surface of the peripheral portion of the upper chamber window 63. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

<Eighth Embodiment>

Next, an eighth embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus of the eighth embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the eighth embodiment is also the same as that of the first embodiment. The eighth embodiment is different from the first embodiment in that opaque quartz is provided on the peripheral portion of the upper chamber window 63.

14 to 17 are views showing the structure of the peripheral portion of the upper chamber window 63 of the eighth embodiment. In FIGS. 14 to 17 , the same elements as those in the first embodiment ( FIG. 8 ) are denoted by the same reference numerals. In the eighth embodiment, the opaque quartz 25 is provided on the peripheral portion of the quartz window upper side chamber window 63. The opaque quartz 25 is, for example, a quartz which has a reduced transmittance of light by containing a plurality of minute bubbles, and is oscillated with respect to the flash light emitted from the flash lamp FL. The transmittance in the long region is very low (for example, 1% or less at a thickness of 3 mm).

In the example shown in Fig. 14, an annular opaque quartz 25 is welded to the outer peripheral end portion of the upper chamber window 63. The outer diameter of the annular opaque quartz 25 is larger than the diameter of the O-ring 21, and the inner diameter is smaller than the diameter of the O-ring 21. Therefore, in the example of Fig. 14, the entire peripheral portion of the upper chamber window 63 including the portion in contact with the O-ring 21 is formed of opaque quartz 25.

Further, in the example shown in FIG. 15, after the portion in contact with the O-ring 21 in the contact surface (lower surface) of the peripheral portion of the upper chamber window 63 is annularly formed with a groove having a semicircular cross section, The welding process of the opaque quartz 25 is performed so that the opaque quartz 25 is buried in the groove portion.

Further, in the example shown in FIG. 16, a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is annularly formed with a groove having a rectangular cross section, and is used in the groove. The opaque quartz 25 is welded in such a manner that the opaque quartz 25 is buried.

Further, in the example shown in FIG. 17, the region including the portion in contact with the O-ring 21 in the contact surface of the peripheral portion of the upper chamber window 63 is subjected to step processing to weld the opaque manner in such a manner that the step of the region disappears. Quartz 25. The example shown in Fig. 17 can also be considered as extending the groove of the example shown in Fig. 16 and the opaque quartz 25 to the outer peripheral end of the upper chamber window 63.

Each of the examples shown in Figs. 14 to 17 is formed with an opaque quartz 25 at a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21. Therefore, in the eighth embodiment, the sealing property is maintained by the contact of the opaque quartz 25 with the O-ring 21. Therefore, as the opaque quartz 25 used in the eighth embodiment, it is preferable to use a surface roughness of a small amount and a high smoothness.

The opaque quartz 25 is provided at a portion of the contact surface of the peripheral portion of the upper chamber window 63 in contact with the O-ring 21, and the strobe light entering the peripheral portion of the upper chamber window 63 when irradiated with the flash light is passed through the opaque quartz 25 The light is blocked from being incident on the O-ring 21, and the amount of light of the strobe light reaching the O-ring 21 is significantly reduced. That is, by being disposed in the upper chamber window 63 The opaque quartz 25 at the peripheral portion blocks the strobe light entering the inside of the peripheral portion of the upper chamber window 63 after exiting from the flash lamp FL, and reaches the O-ring 21. As a result, it is possible to prevent the O-ring 21 from being exposed to the flash light when the flash light is irradiated, thereby preventing deterioration of the O-ring 21 caused by the flash light irradiation.

Further, in the case of the opaque quartz 25, similarly to the quartz which is the material of the upper chamber window 63, there is no contamination of the inside of the chamber 6 of the semiconductor wafer W.

<Ninth Embodiment>

Next, a ninth embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus according to the ninth embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the ninth embodiment is also the same as that of the first embodiment. The ninth embodiment differs from the first embodiment in that opaque quartz is provided on the peripheral portion of the upper chamber window 63.

18 to 25 are views showing the structure of the peripheral portion of the upper chamber window 63 of the ninth embodiment. In FIGS. 18 to 25, the same elements as those in the first embodiment (FIG. 8) are denoted by the same reference numerals. In the ninth embodiment, the opaque quartz 25 is provided on the peripheral portion of the quartz window upper side chamber window 63. However, in the ninth embodiment, the portion in contact with the O-ring 21 is formed of transparent quartz. The transparent quartz is the same as the quartz forming the upper chamber window 63, and transmits the strobe light emitted from the flash lamp FL.

In the example shown in FIG. 18, a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is annularly formed with a groove having a rectangular cross section, and is buried in the groove portion. The opaque quartz 25 is welded in such a manner as to enter the opaque quartz 25. Further, a portion having a rectangular cross section is formed in a ring shape in a portion in contact with the O-ring 21 on the surface of the opaque quartz 25, and the transparent quartz is formed by embedding transparent quartz in the groove portion. Welding treatment.

In the example shown in FIG. 19, an annular opaque quartz 25 is welded to the outer peripheral end portion of the upper chamber window 63, and a ring is welded to the outer peripheral surface of the opaque quartz 25. Shaped transparent quartz 26. The outer diameter and inner diameter of the annular opaque quartz 25 are smaller than the diameter of the O-ring 21. Further, the outer diameter of the annular-shaped transparent quartz 26 is larger than the diameter of the O-ring 21, and the inner diameter is smaller than the diameter of the O-ring 21. Therefore, in the example of Fig. 19, the portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of a transparent quartz 26, and an annular opaque quartz 25 is provided inside.

In the example shown in FIG. 20, a groove having a rectangular cross section is formed in an annular shape on a portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21, and the groove is formed in the groove. The opaque quartz 25 is welded in such a manner that the opaque quartz 25 is buried. Thereby, as shown in Fig. 20, the portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of transparent quartz, and the wall of the opaque quartz 25 is formed on the inner side. The height of the wall of the opaque quartz 25 may be such a degree that the light entering the periphery of the peripheral portion of the upper chamber window 63 can be prevented from reaching the contact portion between the peripheral portion of the upper chamber window 63 and the O-ring 21. The example shown in Fig. 19 can be seen as extending the height of the wall of the opaque quartz 25 of the example shown in Fig. 20 above and below the upper chamber window 63.

In the example shown in FIG. 21, in the peripheral portion of the upper chamber window 63, the inner side of the portion in contact with the O-ring 21 is annularly formed from the upper surface side and the lower surface side. After the groove having the rectangular cross section is engraved, the opaque quartz 25 is welded to the two grooves so that the opaque quartz 25 is buried. Thereby, as shown in FIG. 21, the portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of transparent quartz, and on the inner side thereof, the two walls of the opaque quartz 25 are alternately formed. The height of the upper end of the opaque quartz 25 from the lower surface side is higher than the height of the lower end of the opaque quartz 25 from the upper surface side. Therefore, the light entering the inside of the peripheral portion of the upper chamber window 63 does not reach the contact portion of the peripheral portion of the upper chamber window 63 with the O-ring 21, but is shielded by the walls of the two opaque quartzs 25. In the example shown in Fig. 21, the walls of the opaque quartz 25 of the example shown in Fig. 20 are alternately disposed above and below the upper chamber window 63.

In the example shown in FIG. 22, the contact surface of the peripheral portion of the upper chamber window 63 is included. The region of the portion in contact with the O-ring 21 is subjected to step processing, and after the entire circumference of the opaque quartz 25 having an L-shaped cross section is welded to the region, the transparent quartz is welded to the entire circumference in such a manner that the step on the inner side of the L-shape disappears. 26. The outer diameter of the transparent quartz 26 is larger than the diameter of the O-ring 21, and the inner diameter is smaller than the diameter of the O-ring 21. Therefore, in the example of Fig. 22, the portion in contact with the O-ring 21 is formed of transparent quartz 26, and the inner side and the upper side thereof are covered by the opaque quartz 25. The example shown in FIG. 22 can also be regarded as a portion where the opaque quartz 25 of the example shown in FIG. 17 is in contact with the O-ring 21, and further step processing is performed to weld the transparent quartz 26 in such a manner that the step of the region disappears. .

In the example shown in FIG. 23, a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is annularly formed with a groove having a rectangular cross section, and is buried in the groove. Into the shape of the ring of opaque quartz 25. Further, thereafter, the entire circumference of the transparent quartz 26 is welded so as to form a lid of the opaque quartz 25 buried in the groove. Thereby, as shown in FIG. 23, a ring of opaque quartz 25 is built in the inside of the upper chamber window 63, and a portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of transparent quartz 26, and The upper side is covered by opaque quartz 25. However, in the example shown in Fig. 23, an air reservoir may be formed in the vicinity of the interface of the opaque quartz 25, and the air reservoir may be thermally expanded during heat treatment to break the upper chamber window 63. The air discharge hole 27 that communicates from the interface of the opaque quartz 25 to the outside of the upper chamber window 63 is appropriately provided.

In the example shown in FIG. 24, a groove having a rectangular cross section is formed in an annular shape on a portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21, and the groove is formed in the groove. The opaque quartz 25 is embedded in a ring shape. Further, thereafter, the entire circumference of the transparent quartz is welded so as to form a lid of the opaque quartz 25 buried in the groove. Thereby, as shown in FIG. 24, a ring of opaque quartz 25 is built in the inside of the upper chamber window 63, and a portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of transparent quartz, and The wall of the opaque quartz 25 is formed on the inner side. The height of the wall of the opaque quartz 25 is such that light reaching the inside of the peripheral portion of the upper chamber window 63 is prevented from reaching the periphery of the upper chamber window 63. The degree of contact between the portion and the O-ring 21 may be sufficient. The example shown in Fig. 24 can be regarded as a case where the height of the wall of the opaque quartz 25 of the example shown in Fig. 20 is lowered to be buried inside the upper chamber window 63. However, in the example shown in FIG. 24, the air reservoir portion may be generated in the vicinity of the interface of the opaque quartz 25, and the air reservoir portion may be thermally expanded during the heat treatment to break the upper chamber window 63, so that Similarly to the example shown in Fig. 23, it is preferable to provide an air discharge hole which communicates from the interface of the opaque quartz 25 to the outside of the upper chamber window 63.

In the example shown in Fig. 25, an annular groove is formed from the end surface of the upper chamber window 63 toward the center side, and the opaque quartz 25 is welded to the groove portion so as to embed the opaque quartz 25. Thereby, as shown in FIG. 25, the portion of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of transparent quartz, and the upper side thereof is covered with the opaque quartz 25. The length of the opaque quartz 25 from the end surface of the upper chamber window 63 to the center side is such that the light that can enter the inside of the peripheral portion of the upper chamber window 63 reaches the peripheral portion of the upper chamber window 63 and the O-ring 21 The degree of contact can be. Further, the groove portion may be inserted into a ring of a plurality of opaque quartz 25 divided in the circumferential direction to perform a welding process.

18 to 25, an opaque quartz 25 is provided on the peripheral portion of the upper chamber window 63, and a portion of the contact surface of the peripheral portion of the upper chamber window 63 that is in contact with the O-ring 21 is formed of transparent quartz 26. . Therefore, in the ninth embodiment, the sealing property is maintained by the contact of the transparent quartz 26 with the O-ring 21. In general, it is possible to make the transparent quartz have a smaller surface roughness and higher smoothness than the opaque quartz, and if the portion in contact with the O-ring 21 is formed of transparent quartz 26, Achieve a higher degree of sealing.

Further, the opaque quartz 25 is provided in such a manner that the strobe light entering the peripheral portion of the upper chamber window 63 when it is blocked by the flash light reaches the contact portion of the peripheral portion of the upper chamber window 63 and the O-ring 21, and The amount of light of the flash light reaching the O-ring 21 is significantly reduced. That is, the strobe light that has entered the peripheral portion of the upper chamber window 63 after being emitted from the flash lamp FL is prevented from reaching the O-ring 21 by the opaque quartz 25 provided at the peripheral portion of the upper chamber window 63. As a result, the O-ring 21 can be prevented from being exposed to the flash light. The flash light prevents the deterioration of the O-ring 21 caused by the illumination of the flash light.

Further, in the case of the opaque quartz 25, similarly to the quartz or the transparent quartz 26 which is the material of the upper chamber window 63, the inside of the chamber 6 of the semiconductor wafer W is not contaminated.

<variation>

The embodiments of the present invention have been described above, but the present invention can be variously modified without departing from the spirit and scope of the invention. For example, in the above-described respective embodiments, the light exposure preventing portion that blocks the light entering the peripheral portion of the upper chamber window 63 from the flash lamp FL and reaches the O-ring 21 is formed on the peripheral portion of the upper chamber window 63. However, in addition to this, the back surface of the clamp ring 67 of the upper chamber window 63 (the surface in contact with the peripheral edge portion of the upper chamber window 63) may be pressed to form a rough surface such as a sandblasting treatment, or a metal film may be formed. Mirror surface. Thereby, the strobe light that reaches the O-ring 21 when the strobe light is irradiated can be further reduced.

Further, in the seventh embodiment, the contact surface (lower surface) and the opposite surface (upper surface) of the peripheral portion of the upper chamber window 63 are sandblasted to form the rough surface 24, but other than this, The end surface of the peripheral portion of the upper chamber window 63 may be sandblasted to form a rough surface. If a rough surface is also formed on the end surface of the peripheral portion of the upper chamber window 63, the flash light can be more reliably prevented from reaching the O-ring 21 when the strobe light is irradiated.

Further, in each of the above embodiments, the light exposure preventing portion is formed on the peripheral portion of the upper chamber window 63, but the O-ring may be sandwiched between the lower chamber window 64 and the chamber side portion 61. Sealing also forms the same light exposure obstruction at the peripheral portion of the lower chamber window 64. The flash light does not substantially reach the lower chamber window 64, but since the halogen light emitted from the halogen lamp HL enters the lower chamber window 64, the light exposure obstruction portion is formed by the peripheral portion of the lower chamber window 64. It can prevent deterioration of the O-ring caused by halogen light.

Further, in each of the above embodiments, the preliminary heating of the semiconductor wafer W is performed by the halogen lamp HL, but instead of mounting the semiconductor wafer W on the heating plate, the preliminary addition may be performed. heat.

Further, in each of the above embodiments, the flash heating unit 5 includes 30 flash lamps FL. However, the present invention is not limited thereto, and the number of the flash lamps FL may be any number. Moreover, the flash FL is not limited to a xenon flash, and may be a xenon flash. In addition, the number of the halogen lamps HL included in the halogen heating unit 4 is not limited to 40, and may be any number as long as a plurality of forms are arranged in the upper stage and the lower stage.

Moreover, the substrate to be processed by the heat treatment apparatus of the present invention is not limited to the semiconductor wafer, and may be a glass substrate for a flat panel display such as a liquid crystal display device or a substrate for a solar cell. Further, the technique of the present invention can also be applied to the joining of a metal to a crucible, or the crystallization of a polyfluorene or the like.

21‧‧‧O-ring

22‧‧‧ slots

61‧‧‧ side of the chamber

63‧‧‧Upper chamber window

67‧‧‧Clip ring (window pressing member)

68‧‧‧Reflective ring

611‧‧‧ slot

Claims (15)

A heat treatment device characterized in that the substrate is heated by irradiating the substrate with flash light, and includes: a chamber that houses the substrate; a holding portion that holds the substrate in the chamber; and a flash lamp that is disposed at An outer portion of the chamber and one side of the chamber; a quartz window covering an opening of the one side of the chamber; an O-ring sandwiched between a side wall of the chamber and a peripheral portion of the quartz window And a window pressing member that presses a peripheral surface of the quartz window facing the contact surface toward the side wall of the chamber; and forms a light exposure blocking portion on a peripheral portion of the quartz window; The light exposure obstructing portion blocks light that has entered the peripheral portion of the quartz window after being emitted from the flash lamp, and reaches the O-ring; and the light exposure blocking portion is a plurality of grooves that are formed on a surface of a peripheral portion of the quartz window. The heat treatment apparatus according to claim 1, wherein the plurality of grooves are provided on the opposite surface of the peripheral portion of the quartz window and a region other than a portion in contact with the O-ring. A heat treatment apparatus according to claim 1 or 2, wherein the plurality of grooves form a mirror surface. A heat treatment device characterized in that the substrate is heated by irradiating the substrate with flash light, and includes: a chamber that houses the substrate; and a holding portion that holds the substrate in the chamber; a flash lamp disposed outside the chamber and on one side of the chamber; a quartz window covering an opening of the one side of the chamber; an O-ring sandwiching the sidewall of the chamber and the quartz window And a window pressing member that presses a peripheral surface of the quartz window facing the contact surface toward the side wall of the chamber; and forms a peripheral portion of the quartz window a light exposure obstructing portion that blocks light that has entered the peripheral portion of the quartz window after being emitted from the flash lamp and reaches the O-ring; and the light exposure blocking portion is formed on a surface of a peripheral portion of the quartz window Mirror surface. The heat treatment apparatus according to claim 4, wherein the mirror surface is formed on the contact surface of the peripheral portion of the quartz window. The heat treatment apparatus according to claim 5, wherein the mirror surface is further formed on the opposite surface and the end surface of the peripheral portion of the quartz window. A heat treatment device characterized in that the substrate is heated by irradiating the substrate with flash light, and includes: a chamber that houses the substrate; a holding portion that holds the substrate in the chamber; and a flash lamp that is disposed at An outer portion of the chamber and one side of the chamber; a quartz window covering an opening of the one side of the chamber; an O-ring sandwiched between a side wall of the chamber and a peripheral portion of the quartz window And a window pressing member that presses a peripheral surface of the quartz window opposite the facing surface toward the side wall of the chamber; and Forming a light exposure obstruction portion on a peripheral portion of the quartz window, the light exposure obstructing portion obstructing light that has entered the peripheral portion of the quartz window after being emitted from the flash lamp, and reaches the O-ring; the light exposure obstruction portion is formed on a rough surface on a surface of a peripheral portion of the quartz window; the rough surface being formed on the opposite surface of the peripheral portion of the quartz window and a region other than a portion in contact with the O-ring in the contact surface. A heat treatment device characterized in that the substrate is heated by irradiating the substrate with flash light, and includes: a chamber that houses the substrate; a holding portion that holds the substrate in the chamber; and a flash lamp that is disposed at An outer portion of the chamber and one side of the chamber; a quartz window covering an opening of the one side of the chamber; an O-ring sandwiched between a side wall of the chamber and a peripheral portion of the quartz window And a window pressing member that presses a peripheral surface of the quartz window facing the contact surface toward the side wall of the chamber; and forms a light exposure blocking portion on a peripheral portion of the quartz window; The light exposure preventing portion blocks the light entering the peripheral portion of the quartz window after the flash is emitted to the O-ring, and the light exposure blocking portion is an opaque quartz provided on a peripheral portion of the quartz window. The heat treatment apparatus according to claim 8, wherein the opaque quartz is provided at a portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring. The heat treatment device of claim 8, wherein A portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring is formed of transparent quartz. A method of manufacturing a heat treatment apparatus, which is a method of manufacturing a heat treatment apparatus for heating a substrate by irradiating flash light from a flash lamp provided outside a chamber of a housing substrate and on one side of the chamber, and The manufacturing method is such that the opening of the one side of the chamber is covered by a quartz window, and an O-ring is sandwiched between a sidewall of the chamber and a peripheral portion of the quartz window, and is performed on a surface of a peripheral portion of the quartz window. The groove is machined to enclose a plurality of grooves. A method of manufacturing a heat treatment apparatus, which is a method of manufacturing a heat treatment apparatus for heating a substrate by irradiating flash light from a flash lamp provided outside a chamber of a housing substrate and on one side of the chamber, and The manufacturing method is such that the opening of the one side of the chamber is covered by a quartz window, and an O-ring is sandwiched between a sidewall of the chamber and a peripheral portion of the quartz window, and a surface of the peripheral portion of the quartz window is formed. The film metal film is set as a mirror surface. A method of manufacturing a heat treatment apparatus, which is a method of manufacturing a heat treatment apparatus for heating a substrate by irradiating flash light from a flash lamp provided outside a chamber of a housing substrate and on one side of the chamber, and In the manufacturing method, the opening of the one side of the chamber is covered by a quartz window, and an O-ring is sandwiched between a sidewall of the chamber and a peripheral portion of the quartz window, and is welded at a peripheral portion of the quartz window. Opaque quartz. The method of manufacturing a heat treatment apparatus according to claim 13, wherein a groove portion is formed in a portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring, and the opaque quartz is buried in the groove portion. Perform welding. The method of manufacturing a heat treatment apparatus according to claim 13, wherein a transparent quartz is provided in a portion of the contact surface of the peripheral portion of the quartz window that is in contact with the O-ring.