JP2000349028A - Substrate processor - Google Patents
Substrate processorInfo
- Publication number
- JP2000349028A JP2000349028A JP11155358A JP15535899A JP2000349028A JP 2000349028 A JP2000349028 A JP 2000349028A JP 11155358 A JP11155358 A JP 11155358A JP 15535899 A JP15535899 A JP 15535899A JP 2000349028 A JP2000349028 A JP 2000349028A
- Authority
- JP
- Japan
- Prior art keywords
- transparent quartz
- face
- quartz
- container
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、基板処理装置に
関し、特に、透明石英容器の中で半導体基板を処理する
半導体基板処理装置に関する。The present invention relates to a substrate processing apparatus, and more particularly to a semiconductor substrate processing apparatus for processing a semiconductor substrate in a transparent quartz container.
【0002】[0002]
【従来の技術】図3は、この種の基板処理装置の従来例
としての半導体基板処理装置の構成を示す縦断面図であ
る。この半導体基板処理装置50は、透明な石英で構成
されて反応管として作用する透明石英容器51および透
明石英容器51の下部に溶接された不透明石英部52
と、透明石英容器51および不透明石英部52を封止す
るとともに、下方から支持するフランジ部54と、透明
石英容器51、不透明石英部52、フランジ部54によ
って囲まれた内部を封止するために、不透明石英部52
とフランジ部54との間に配置されたOリング55と、
前記内部で所定の処理を実行させるために、透明石英容
器51の周囲に配置されたヒータ56とから構成されて
いる。この場合、不透明石英部52は、Oリング55へ
の熱影響を低減するため設けられ、透明石英容器51か
らOリング55へ伝導される熱を遮断するために、内部
に微細な気泡が生成されたり、焼結工程の処理を受けた
りして製造されている。2. Description of the Related Art FIG. 3 is a longitudinal sectional view showing a configuration of a semiconductor substrate processing apparatus as a conventional example of this type of substrate processing apparatus. The semiconductor substrate processing apparatus 50 includes a transparent quartz container 51 made of transparent quartz and acting as a reaction tube, and an opaque quartz portion 52 welded to a lower portion of the transparent quartz container 51.
To seal the transparent quartz container 51 and the opaque quartz portion 52 and to seal the inside surrounded by the flange portion 54 supported from below and the transparent quartz container 51, the opaque quartz portion 52, and the flange portion 54. , Opaque quartz part 52
An O-ring 55 disposed between the
A heater 56 is provided around the transparent quartz container 51 in order to execute a predetermined process inside. In this case, the opaque quartz portion 52 is provided to reduce the thermal effect on the O-ring 55, and fine bubbles are generated inside to block the heat conducted from the transparent quartz container 51 to the O-ring 55. It is manufactured after undergoing a sintering process.
【0003】[0003]
【発明が解決しようとする課題】上述の半導体基板処理
装置の不透明石英部は、透明石英容器から伝導される熱
を遮断するために、内部に微細な気泡が生成されたり、
焼結工程を受けたりして製造されている。このような工
程を経て製造されているために、不透明石英部のフラン
ジ部と対向する表面の荒さは大きく、フランジ部との間
にOリングを使用しているのに拘わらず気密性を損なう
場合がある。上述の例では、透明石英容器、不透明石英
部、フランジ部を垂直に配置しているが、水平に配置し
なければならない場合にこの問題はさらに大きくなる。The opaque quartz portion of the above-mentioned semiconductor substrate processing apparatus has a problem that fine bubbles are generated inside the opaque quartz portion in order to block heat conducted from the transparent quartz container.
It is manufactured through a sintering process. Since the opaque quartz portion is manufactured through such a process, the surface of the opaque quartz portion facing the flange portion has a large roughness, and the airtightness is impaired despite the use of the O-ring between the opaque quartz portion and the flange portion. There is. In the above-described example, the transparent quartz container, the opaque quartz portion, and the flange portion are arranged vertically, but this problem is further exacerbated when the transparent quartz container, the opaque quartz portion, and the flange portion must be arranged horizontally.
【0004】この発明は、上記の問題に鑑み、透明石英
容器、不透明石英部、フランジ部を水平に配置しなけれ
ばならない場合でも、良好に気密性を保つことができる
基板処理装置を提供することを目的とする。[0004] In view of the above problems, the present invention provides a substrate processing apparatus that can maintain good airtightness even when the transparent quartz container, the opaque quartz portion, and the flange portion must be arranged horizontally. With the goal.
【0005】[0005]
【課題を解決するための手段】前述した課題を解決する
ために、この発明は、透明石英容器の中で基板を処理す
る基板処理装置において、一方の端面が前記透明石英容
器の開放端面の少なくとも一部に溶接された不透明石英
部と、一方の端面が前記不透明石英部の他方の端面の少
なくとも一部に溶接され、他方の端面が平面加工された
透明石英部と、一方の端面が前記透明石英部の平面加工
された他方の端面との間に封止用部材を挟むように互い
に押圧して透明石英容器の内部を気密状態にするフラン
ジ部とを有する。In order to solve the above-mentioned problems, the present invention provides a substrate processing apparatus for processing a substrate in a transparent quartz container. An opaque quartz part welded to a part, one end face is welded to at least a part of the other end face of the opaque quartz part, and the other end face is a transparent quartz part whose plane is processed, and one end face is the transparent quartz part. And a flange portion which presses each other so as to sandwich the sealing member between the other flat end surface of the quartz portion and makes the inside of the transparent quartz container airtight.
【0006】そして、この発明の実施の形態では、透明
石英容器11の中で半導体基板を処理する半導体基板処
理装置10において、一方の端面が前記透明石英容器1
1の開放端面に溶接された不透明石英部12と、一方の
端面が前記不透明石英部12の他方の端面に溶接され、
他方の端面が平面加工された透明石英部13と、一方の
端面が前記透明石英部13の平面加工された他方の端面
との間に封止用部材15を挟むように互いに押圧して透
明石英容器11の内部を気密状態にするフランジ部14
とを有する。In the embodiment of the present invention, in a semiconductor substrate processing apparatus 10 for processing a semiconductor substrate in a transparent quartz container 11, one end face is the transparent quartz container 1.
An opaque quartz part 12 welded to the open end face of the opaque quartz part 12, and one end face is welded to the other end face of the opaque quartz part 12;
The transparent quartz portion 13 whose other end surface is flattened, and the transparent quartz portion 13 are pressed against each other so that the sealing member 15 is sandwiched between the other end surface whose one end surface is flattened. Flange part 14 for making the inside of container 11 airtight
And
【0007】このような構成によれば、不透明石英部
は、透明石英容器からの熱の伝導を遮断して従来と同様
に熱効率を高く維持し、かつ、透明石英容器の内部を気
密に封止するのは、透明石英部とフランジ部と封止用部
材とによって行っているので、不透明石英部がその封止
に関与することがなく、封止部分に微少なリークを発生
させない。According to this structure, the opaque quartz portion blocks the conduction of heat from the transparent quartz container to maintain high thermal efficiency as in the conventional case, and hermetically seals the inside of the transparent quartz container. Since the transparent quartz portion, the flange portion, and the sealing member are used to perform the sealing, the opaque quartz portion does not participate in the sealing, and a small leak does not occur in the sealed portion.
【0008】[0008]
【発明の実施の形態】以下、この発明の実施の形態につ
いて添付図面に基づいて説明する。 実施の形態1.図1は、この発明に係わる基板処理装置
の実施の形態として、半導体基板処理装置の一例を示す
構成図である。半導体基板処理装置10は、図3の従来
例とは異なり、透明石英容器、不透明石英部、フランジ
部を水平に配置している。この半導体基板処理装置10
は、透明な石英で構成されて反応管として作用する透明
石英容器11および透明石英容器11の両方の開放端面
に溶接された不透明石英部12と、不透明石英部12の
開放端面に溶接された透明石英部13と、透明石英部1
3の開放端面との間に封止用部材であるOリング15を
挟んで、透明石英容器11および不透明石英部12で囲
まれた部分を気密になるように封止しているフランジ部
14とから構成されている。Embodiments of the present invention will be described below with reference to the accompanying drawings. Embodiment 1 FIG. FIG. 1 is a configuration diagram showing an example of a semiconductor substrate processing apparatus as an embodiment of a substrate processing apparatus according to the present invention. The semiconductor substrate processing apparatus 10 differs from the conventional example of FIG. 3 in that a transparent quartz container, an opaque quartz portion, and a flange portion are horizontally arranged. This semiconductor substrate processing apparatus 10
Is a transparent quartz container 11 composed of transparent quartz and acting as a reaction tube, and an opaque quartz portion 12 welded to the open end surfaces of both the transparent quartz container 11 and a transparent quartz portion welded to the open end surface of the opaque quartz portion 12. Quartz part 13 and transparent quartz part 1
And a flange portion 14 that seals a portion surrounded by the transparent quartz container 11 and the opaque quartz portion 12 so as to be airtight, with an O-ring 15 serving as a sealing member interposed between the flange portion 14 and the open end surface of the flange 3. It is composed of
【0009】上述の例において、透明石英部13を形成
するために、不透明石英部12の開放端面に透明石英を
肉盛り溶接し(1mm〜2mmが好適である)、研磨に
より平面加工し、バーナで焼き仕上げした。したがっ
て、処理のために作動されるヒータ16の加熱により供
給された熱は、透明石英容器11を伝わってOリング1
5方向へ向かうが、その熱の伝導は、不透明石英部12
によって遮断される。また、透明石英容器11の内部の
気密性について、フランジ部14との継ぎ目は、フラン
ジ部14と透明石英部13とOリング15とで封止して
いるので、不透明石英部がこの封止に関与しないため、
良好な気密性が確保できる。特に、透明石英容器11の
ウェット洗浄後の微少リークが低減した。In the above-described example, in order to form the transparent quartz portion 13, the transparent quartz portion is welded to the open end face of the opaque quartz portion 12 by overlay welding (preferably 1 mm to 2 mm), flattened by polishing, and burned. Finished with baking. Therefore, the heat supplied by the heating of the heater 16 operated for processing is transmitted through the transparent quartz container 11 to the O-ring 1.
In the five directions, the heat conduction is performed by the opaque quartz portion 12.
Cut off by Regarding the airtightness of the inside of the transparent quartz container 11, the joint with the flange portion 14 is sealed by the flange portion 14, the transparent quartz portion 13, and the O-ring 15, so that the opaque quartz portion is sealed by this sealing. Not involved,
Good airtightness can be secured. In particular, a small leak after the wet cleaning of the transparent quartz container 11 was reduced.
【0010】実施の形態2.図2は、この発明に係わる
基板処理装置の実施の形態の他の例を示す構成図であ
る。この半導体基板処理装置20においては、図1の例
とは異なり、透明石英容器21に溶接された不透明石英
部22の一部分に透明石英部23が溶接され、この透明
石英部23とフランジ部24の間にOリング25が配置
されて透明石英容器21の内部の気密を保っている。こ
のように構造を変形した理由は、不透明石英は、透明石
英に比較して強度的に劣るからである。Embodiment 2 FIG. 2 is a configuration diagram showing another example of the embodiment of the substrate processing apparatus according to the present invention. In the semiconductor substrate processing apparatus 20, unlike the example of FIG. 1, a transparent quartz portion 23 is welded to a part of an opaque quartz portion 22 welded to a transparent quartz container 21, and the transparent quartz portion 23 and the flange portion 24 are joined together. An O-ring 25 is disposed therebetween to keep the inside of the transparent quartz container 21 airtight. The reason why the structure is deformed in this way is that opaque quartz is inferior in strength to transparent quartz.
【0011】[0011]
【発明の効果】以上に詳述したように、この発明に係わ
る基板処理装置は、透明石英容器の中で基板を処理する
ために、一方の端面が前記透明石英容器の開放端面に溶
接された不透明石英部と、一方の端面が前記不透明石英
部の他方の端面に溶接され、他方の端面が平面加工され
た透明石英部と、一方の端面が前記透明石英部の平面加
工された他方の端面との間に封止用部材を挟むように互
いに押圧して透明石英容器の内部を気密状態にするフラ
ンジ部とを有することによって、伝導によって透明石英
容器から逃げる熱を不透明石英部によって遮断して熱効
率を高く保つとともに、透明石英容器の内部を気密に封
止するのは、透明石英部とフランジ部と封止用部材とに
よって行っているので、不透明石英部がその封止に関与
することがなく、封止部分に微少なリークを発生させ
ず、良好な気密性を保つことができる。As described in detail above, the substrate processing apparatus according to the present invention has one end face welded to the open end face of the transparent quartz container in order to process the substrate in the transparent quartz container. An opaque quartz portion, a transparent quartz portion in which one end surface is welded to the other end surface of the opaque quartz portion and the other end surface is planarized, and the other end surface in which one end surface is planarized in the transparent quartz portion And a flange portion that presses each other so as to sandwich the sealing member between them and makes the inside of the transparent quartz container airtight, so that heat escaping from the transparent quartz container by conduction is blocked by the opaque quartz portion. While keeping the thermal efficiency high, the inside of the transparent quartz container is hermetically sealed by the transparent quartz part, the flange part, and the sealing member, so that the opaque quartz part may be involved in the sealing. Not Without generating a minute leak stop portion, it can be kept good airtightness.
【図1】この発明に係わる基板処理装置の実施の形態の
一例を示す構成図である。FIG. 1 is a configuration diagram showing an example of an embodiment of a substrate processing apparatus according to the present invention.
【図2】この発明に係わる基板処理装置の実施の形態の
他の例を示す構成図である。FIG. 2 is a configuration diagram showing another example of the embodiment of the substrate processing apparatus according to the present invention.
【図3】従来例を示す図である。FIG. 3 is a diagram showing a conventional example.
10,20 半導体基板処理装置 11,21 透明石英容器 12,22 不透明石英部 13,23 透明石英部 14,24 フランジ部 10,20 Semiconductor substrate processing apparatus 11,21 Transparent quartz container 12,22 Opaque quartz part 13,23 Transparent quartz part 14,24 Flange part
Claims (1)
処理装置において、一方の端面が前記透明石英容器の開
放端面の少なくとも一部に溶接された不透明石英部と、 一方の端面が前記不透明石英部の他方の端面の少なくと
も一部に溶接され、他方の端面が平面加工された透明石
英部と、 一方の端面が前記透明石英部の平面加工された他方の端
面との間に封止用部材を挟むように互いに押圧して透明
石英容器の内部を気密状態にするフランジ部とを有する
ことを特徴とする基板処理装置。1. A substrate processing apparatus for processing a substrate in a transparent quartz container, wherein an opaque quartz portion having one end face welded to at least a part of an open end face of the transparent quartz container; For sealing between a transparent quartz part welded to at least a part of the other end face of the quartz part and the other end face is flattened, and one other end face of the transparent quartz part flattened. A substrate processing apparatus comprising: a flange portion that presses each other so as to sandwich the member to make the inside of the transparent quartz container airtight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11155358A JP2000349028A (en) | 1999-06-02 | 1999-06-02 | Substrate processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11155358A JP2000349028A (en) | 1999-06-02 | 1999-06-02 | Substrate processor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000349028A true JP2000349028A (en) | 2000-12-15 |
Family
ID=15604170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11155358A Pending JP2000349028A (en) | 1999-06-02 | 1999-06-02 | Substrate processor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000349028A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008258240A (en) * | 2007-04-02 | 2008-10-23 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
US7718930B2 (en) | 2003-04-07 | 2010-05-18 | Tokyo Electron Limited | Loading table and heat treating apparatus having the loading table |
WO2012011488A1 (en) * | 2010-07-21 | 2012-01-26 | 東京エレクトロン株式会社 | Placing table structure and processing apparatus |
JP2016184716A (en) * | 2015-03-25 | 2016-10-20 | 株式会社Screenホールディングス | Heat treatment apparatus and method for manufacturing heat treatment apparatus |
US10475674B2 (en) | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
-
1999
- 1999-06-02 JP JP11155358A patent/JP2000349028A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7718930B2 (en) | 2003-04-07 | 2010-05-18 | Tokyo Electron Limited | Loading table and heat treating apparatus having the loading table |
JP2008258240A (en) * | 2007-04-02 | 2008-10-23 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
WO2012011488A1 (en) * | 2010-07-21 | 2012-01-26 | 東京エレクトロン株式会社 | Placing table structure and processing apparatus |
JP2016184716A (en) * | 2015-03-25 | 2016-10-20 | 株式会社Screenホールディングス | Heat treatment apparatus and method for manufacturing heat treatment apparatus |
US10475674B2 (en) | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH1195230A (en) | Production of liquid crystal panel and apparatus for production | |
JP2000349028A (en) | Substrate processor | |
CN107946185A (en) | Wafer bonding method | |
JP2000150396A (en) | Thermal radiation reflector | |
JP2002324655A (en) | Manufacturing method of heating plate having sheath heater | |
JP2002130583A (en) | Method for manufacturing vacuum insulation body | |
JPS6345840A (en) | Plastic sealed semiconductor device | |
JPH05280647A (en) | Vacuum seal method | |
JPH0248472A (en) | Method and apparatus for bonding large dimension processed product composed of silicon carbide | |
JP2002097040A (en) | Method of joining solid | |
JP2641036B2 (en) | Method of welding and connecting fluorine resin tubes | |
JPS6068533A (en) | Fluorescent character display tube | |
JP3066144U (en) | Heater unit | |
JP2000294547A (en) | Substrate heating device | |
JP3821501B2 (en) | Method for producing quartz glass article | |
JP2002202497A (en) | Manufacturing method of liquid crystal display device and its manufacturing device | |
JP2001351999A (en) | Method and device for forming package | |
JP2002292781A (en) | Clad material and method for manufacturing the same | |
JPH11195865A (en) | Anisotropic conductive film pasting apparatus | |
JP4402827B2 (en) | How to connect the tip tube to the exhaust head | |
JPH08337275A (en) | Manufacture of high-strength heat-insulated vacuum container made of stainless steel | |
JPH02288130A (en) | Manufacture of display device | |
JPH0450646A (en) | Limiting-current type oxygen sensor | |
JPH02215416A (en) | Manufacture of metallic thermos bottle | |
JPH10130837A (en) | Vacuum heater |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040331 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040406 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050120 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050519 |