TWI596443B - Light-emitting device used in peripheral exposure apparatus - Google Patents

Light-emitting device used in peripheral exposure apparatus Download PDF

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TWI596443B
TWI596443B TW104132035A TW104132035A TWI596443B TW I596443 B TWI596443 B TW I596443B TW 104132035 A TW104132035 A TW 104132035A TW 104132035 A TW104132035 A TW 104132035A TW I596443 B TWI596443 B TW I596443B
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peripheral exposure
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exposure device
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TW201614387A (en
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蘆田克己
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豪雅冠得光電股份有限公司
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Description

用於周邊曝光裝置的光照射裝置 Light irradiation device for peripheral exposure device

本發明涉及一種用於周邊曝光裝置的光照射裝置,向半導體基板、液晶顯示裝置用玻璃基板、光掩膜用玻璃基板等塗有光致抗蝕劑的基板邊緣部周邊進行光照射,且為了除去該邊緣部多餘的抗蝕劑而進行曝光。 The present invention relates to a light irradiation device for a peripheral exposure apparatus, which performs light irradiation on a periphery of a substrate edge portion of a substrate on which a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, or the like is coated with a photoresist, and The excess resist at the edge portion is removed and exposure is performed.

以往,在IC(Integrated Circuit)和LSI(Large Scale Integrated circuit)等半導體的製造工序中,在半導體晶片的表面塗上光致抗蝕劑,通過掩膜向該抗蝕層進行曝光顯影,從而形成電路圖形。 Conventionally, in the manufacturing process of a semiconductor such as an IC (Integrated Circuit) or an LSI (Large Scale Integrated circuit), a photoresist is applied onto the surface of the semiconductor wafer, and the resist layer is exposed and developed through a mask to form a semiconductor layer. Circuit graphics.

作為在半導體晶片表面上塗覆抗蝕劑的方法,一般都採用旋塗法。即將晶片放置在旋轉臺上,在該晶片表面的中心附近滴下抗蝕劑使其旋轉,通過離心力作用使晶片表面整體都塗上抗蝕劑。 As a method of applying a resist on the surface of a semiconductor wafer, a spin coating method is generally employed. That is, the wafer is placed on a rotating table, and a resist is dropped and rotated around the center of the surface of the wafer, and the entire surface of the wafer is coated with a resist by centrifugal force.

採用這種旋塗法,雖然不僅在晶片中央部的電路圖形形成區域有塗覆抗蝕劑,在未形成電路圖形的晶片邊緣部也有塗覆,但是很多時候,為了運送晶片,晶片運送裝置會握持住晶 片邊緣部,如果晶片邊緣部一直殘留抗蝕劑,在晶片運送過程中,會出現抗蝕劑的一部分剝離、脫落的現象。並且,如果晶片邊緣部的抗蝕劑出現脫落,而脫落的抗蝕劑又附著在晶片的電路圖形形成區域上時,則無法形成所期望的電路圖形,會有成品率也降低的問題。因此,一般情況下,使用對包含晶片邊緣部在內的其周邊照射光的周邊曝光裝置進行抗蝕劑的曝光,去除塗覆在晶片邊緣部的多餘抗蝕劑。這種用於周邊曝光裝置的光照射裝置,例如在專利文獻1中有記載。 According to this spin coating method, although not only a resist is applied in the circuit pattern forming region at the central portion of the wafer but also at the edge portion of the wafer where the circuit pattern is not formed, in many cases, the wafer transport device is used to transport the wafer. Hold the crystal At the edge portion of the wafer, if the resist remains in the edge portion of the wafer, a part of the resist peels off and falls off during wafer conveyance. Further, when the resist at the edge portion of the wafer is detached and the detached resist adheres to the circuit pattern forming region of the wafer, the desired circuit pattern cannot be formed, and the yield is also lowered. Therefore, in general, exposure of a resist is performed using a peripheral exposure apparatus that irradiates light to the periphery including the edge portion of the wafer, and excess resist applied to the edge portion of the wafer is removed. Such a light irradiation device for a peripheral exposure device is described, for example, in Patent Document 1.

專利文獻1中所述的用於周邊曝光裝置(邊緣曝光裝置)的光照射裝置,具備有:光源單元,其內部具有燈;第一光導,對光源單元所射出的光進行導光;光混合光學元件(石英棒),混合第一光導所射出的光;第二光導,對光混合光學元件所射出的光進行導光;照射頭,將第二光導的光投射至基板邊緣部上,並以燈所照射的光彙聚到基板邊緣部的指定區域的方式而構成。 The light irradiation device for a peripheral exposure device (edge exposure device) described in Patent Document 1 includes a light source unit having a lamp inside, and a first light guide that guides light emitted from the light source unit; An optical element (quartz rod) that mixes light emitted by the first light guide; a second light guide that guides light emitted by the light mixing optical element; and an illumination head that projects light of the second light guide onto the edge portion of the substrate, and The light irradiated by the lamp is concentrated to a predetermined area of the edge portion of the substrate.

經該周邊曝光裝置曝光後,通過蝕刻等去除晶片邊緣部上的多餘抗蝕劑,但是如果多餘抗蝕劑沒有被完全去除,在晶片上少量殘留時(即產生所謂的灰區時),將會成為導致後工序抗蝕劑脫落的原因。因此,優選地,去除多餘抗蝕劑後的抗蝕劑端部的橫截面形狀(即,殘留在電路圖形形成區域的抗蝕劑端部的橫截面形狀),為電路圖形形成區域與晶片邊緣部之間呈急劇上升(即,不太平緩)的形狀。 After exposure by the peripheral exposure device, the excess resist on the edge portion of the wafer is removed by etching or the like, but if the excess resist is not completely removed, when a small amount remains on the wafer (that is, when a so-called gray region is generated), This may cause the resist to fall off in the post process. Therefore, preferably, the cross-sectional shape of the resist end after removing the excess resist (that is, the cross-sectional shape of the resist end remaining in the circuit pattern forming region) is the circuit pattern forming region and the wafer edge There is a sharp rise (ie, less gradual) shape between the parts.

上所述的出現灰區的出現起因於從周邊曝光裝置投 射到基板邊緣部的光的照射強度分佈。即,從周邊曝光裝置投射到基板邊緣部的光照射強度分佈,如果在電路圖形形成區域與晶片邊緣部之間平緩地變化時,在電路圖形形成區域與晶片邊緣部之間將出現曝光不充分區域,殘留在電路圖形形成區域的抗蝕劑端部的橫截面形狀也變為平緩的形狀(即,出現灰區),因此,從周邊曝光裝置投射到邊緣部的光照射強度分佈,優選在電路圖形形成區域與晶片邊緣部之間為急劇上升的(即,不太平緩)形狀。由此,專利文獻1所述的周邊曝光裝置中,以在照射頭內形成矩形縫隙,通過光混合光學元件混合後的光,穿過縫隙投射到基板上的方式構成。 The appearance of the gray area appearing above is caused by the projection from the peripheral exposure device The intensity distribution of light incident on the edge portion of the substrate. That is, the light irradiation intensity distribution projected from the peripheral exposure device to the edge portion of the substrate may be insufficiently exposed between the circuit pattern forming region and the wafer edge portion if the light pattern is gently changed between the circuit pattern forming region and the wafer edge portion. In the region, the cross-sectional shape of the resist end remaining in the circuit pattern forming region also becomes a gentle shape (that is, a gray region appears), and therefore, the light irradiation intensity distribution projected from the peripheral exposure device to the edge portion is preferably A sharply rising (i.e., less gradual) shape is formed between the circuit pattern forming region and the wafer edge portion. Therefore, in the peripheral exposure apparatus described in Patent Document 1, a rectangular slit is formed in the irradiation head, and the light mixed by the optical mixing optical element is projected through the slit onto the substrate.

專利文獻1:特許第3947365號說明書。 Patent Document 1: License No. 3947365.

根據專利文獻1中所述的用於周邊曝光裝置的光照射裝置,投射在基板上的光,穿過縫隙後,只會成為在某種程度上限制了擴散角的矩形光束(即,大致平行光束),因此,在電路圖形形成區域與晶片邊緣部之間成為相對地急劇上升(即,不太平緩)的照射強度分佈,在一定程度上也就抑制了灰區的產生。 According to the light irradiation device for a peripheral exposure device described in Patent Document 1, the light projected on the substrate passes through the slit and becomes only a rectangular light beam that restricts the diffusion angle to some extent (that is, substantially parallel). The light beam), therefore, a relatively sharp rise (i.e., less gradual) of the intensity distribution between the circuit pattern forming region and the wafer edge portion, and to some extent, suppresses the generation of the gray region.

然而,最近,形成在晶片上的電路越來越集成化,電路圖形也越來越微型化,因此,需求一種用於周邊曝光裝置的光照射裝置,其在電路圖形與晶片邊緣部之間,可投射比以往更加急劇上升(即,更加不平緩)的照射強度分佈的光。 Recently, however, circuits formed on a wafer have become more and more integrated, and circuit patterns have become more and more miniaturized. Therefore, there is a need for a light irradiation device for a peripheral exposure device between a circuit pattern and a wafer edge portion. It is possible to project light of an irradiation intensity distribution which is sharply increased (i.e., more uneven) than ever.

為了使投射在基板上的光照射強度分佈,在電路圖形形成區域與晶片邊緣部之間更加急劇上升,可提高投射在基板 上的光的照射強度本身,但是一旦所提高的照射強度超過所需時,由於光學部件或抗蝕面的反射等原因而產生意想不到的雜散光,如果該雜散光照射到電路圖形的形成區域,則會出現所謂的圖形損壞,從而無法得到所期望的解析度的電路圖形。 In order to make the light irradiation intensity distribution projected on the substrate sharply rise between the circuit pattern forming region and the edge portion of the wafer, the projection on the substrate can be improved. The intensity of the light on the light itself, but if the increased intensity of the illumination exceeds the required level, unexpected stray light is generated due to reflection of the optical member or the resist surface, etc., if the stray light is irradiated to the formation region of the circuit pattern There is a so-called pattern damage, so that the circuit pattern of the desired resolution cannot be obtained.

本發明正是鑒於上述情況,並基於此目的的同時,提供一種用於周邊曝光裝置的光照射裝置,其可有效抑制圖形損壞的發生,同時還可以照射在電路圖形的形成區域和晶片的邊緣部之間具有急劇上升的照射強度分佈的光。 The present invention has been made in view of the above circumstances and, in view of the above object, a light irradiation device for a peripheral exposure device which can effectively suppress the occurrence of pattern damage while also irradiating a formation region of a circuit pattern and an edge of a wafer. Light with a sharply rising intensity distribution between the parts.

為了達到上述目的,本發明的用於周邊曝光裝置的光照射裝置,是一種具備有射出光的光源,且將該光照射在待照射物的邊緣部周邊、並對該邊緣部進行曝光的用於周邊曝光裝置的光照射裝置,其特徵在於,光源形成指定的光強分佈,在待照射物的邊緣部周邊的光強,隨待照射物由內側向外側變低。 In order to achieve the above object, a light irradiation device for a peripheral exposure apparatus according to the present invention is a light source including a light source that emits light and that illuminates the periphery of an edge portion of an object to be irradiated and exposes the edge portion. The light irradiation device of the peripheral exposure device is characterized in that the light source forms a predetermined light intensity distribution, and the light intensity around the edge portion of the object to be irradiated becomes lower from the inner side to the outer side as the object to be irradiated.

根據此結構,向待照射物的邊緣部周邊,照射急劇上升的(即,不太平緩)照射強度分佈的光,因此,可準確保留電路圖形形成區域的抗蝕劑,同時還可以準確地去除待照射物邊緣部的抗蝕劑。此外,待照射物的邊緣部周邊的光強,以隨待照射物由內側向外側變低的方式構成,因而可抑制由光學部件或抗蝕面的反射等所引起的意想不到的雜散光的產生,即可抑制所謂的圖形損壞的產生。 According to this configuration, the light having a sharply rising (i.e., not gradual) illumination intensity distribution is irradiated toward the periphery of the edge portion of the object to be irradiated, and therefore, the resist of the circuit pattern forming region can be accurately retained while being accurately removed. The resist at the edge of the object to be irradiated. Further, since the light intensity around the edge portion of the object to be irradiated is configured to be lower from the inside to the outside as the object to be irradiated, it is possible to suppress unexpected stray light caused by reflection of the optical member or the resist surface. When generated, the occurrence of so-called pattern damage can be suppressed.

此外,可構成為:光源具備有放射光的放電燈、以 及由對放電燈的光進行導光的多根光纖線組成的光導。光導具有光入射面,將多根光纖線收攏成圓形並射入來自放電燈的光;以及光出射面,將多根光纖線收攏成矩形並將放電燈射入的光射出。光出射面由:在光入射面配置有位於中心部的多根光纖線的一部分的第一區域、以及在光入射面配置有位於周邊部的多根光纖線的一部分的第二區域構成。在待照射物的邊緣部周邊,第一區域射出的光,比第二區域射出的光更靠近待照射物的內側。此外,這種情況下,可構成為多根光纖線隨機配置。 Further, the light source may be configured to include a discharge lamp that emits light, And a light guide composed of a plurality of optical fiber lines that guide light of the discharge lamp. The light guide has a light incident surface, and the plurality of optical fiber lines are gathered into a circular shape and incident on the light from the discharge lamp; and the light exit surface is formed by folding the plurality of optical fiber lines into a rectangular shape and emitting the light incident from the discharge lamp. The light exit surface is composed of a first region in which a part of the plurality of optical fiber lines located at the center portion is disposed on the light incident surface, and a second region in which a part of the plurality of optical fiber lines located in the peripheral portion is disposed on the light incident surface. Around the edge portion of the object to be irradiated, the light emitted from the first region is closer to the inner side of the object to be irradiated than the light emitted from the second region. Further, in this case, a plurality of optical fiber lines may be randomly arranged.

此外,可構成為:具備有與待照射物平行設置的基板、以及二維設置於該基板上,並形成矩形光出射面的多個發光元件,光源在與光出射面相對的兩邊呈平行的方向上,形成指定的光強分佈。此外,這種情況下,可具備透鏡,其光源各自配置在多個發光元件的光路中,從各發光元件射出的光成為大致平行光而整形或形成。此外,這種情況下,可構成為:光出射面由射出第一強度的光的第一區域、以及射出比第一強度要低的第二強度的光的第二區域構成,在待照射物的邊緣部周邊,從第一區域射出的光,比第二區域射出的光更靠近待照射物的內側。 Further, the substrate may be provided with a substrate disposed in parallel with the object to be irradiated, and a plurality of light-emitting elements two-dimensionally disposed on the substrate to form a rectangular light exit surface, and the light source is parallel on both sides opposite to the light exit surface. In the direction, a specified light intensity distribution is formed. Further, in this case, a lens may be provided, in which the light sources are disposed in the optical paths of the plurality of light-emitting elements, and the light emitted from the respective light-emitting elements is shaped or formed by substantially parallel light. Further, in this case, the light exit surface may be configured by a first region that emits light of a first intensity and a second region that emits light of a second intensity lower than the first intensity, in the object to be irradiated Around the edge portion, the light emitted from the first region is closer to the inner side of the object to be irradiated than the light emitted from the second region.

此外,優選地,以第一區域射出的光,照射到待照射物上的方式而構成。 Further, it is preferable that the light emitted from the first region is irradiated onto the object to be irradiated.

此外,優選地,以第二區域射出的光的至少一部分,照射到待照射物外側的方式而構成。 Further, it is preferable that at least a part of the light emitted from the second region is irradiated to the outside of the object to be irradiated.

此外,可構成為,第一區域與第二區域的大小大致 相等。 In addition, the size of the first area and the second area may be substantially equal.

此外,優選地,還可以具備有光混合器,其將光出射面射出的光混合後射出,且橫截面為大致矩形。此外,在這種情況下,可構成為,光混合器為混合第一區域射出的光和第二區域射出的光的玻璃棒。此外,也可為光混合器具有混合第一區域射出的光的第一玻璃棒、以及混合第二區域射出的光的第二玻璃棒的結構。 Further, preferably, a light mixer may be further provided which mixes the light emitted from the light exit surface and emits the light, and has a substantially rectangular cross section. Further, in this case, the optical hybrid may be configured as a glass rod that mixes the light emitted from the first region and the light emitted from the second region. Further, the optical hybrid may have a structure in which a first glass rod that mixes light emitted from the first region and a second glass rod that mixes light emitted from the second region.

此外,優選地,光包含有至少作用于塗覆在待照射物上的抗蝕層的光的波長。 Further, preferably, the light contains a wavelength of light that acts at least on the resist layer coated on the object to be irradiated.

如上所述,根據本發明,實現一種可以抑制圖形損壞的產生,且可以照射在電路圖形形成區域與晶片邊緣部之間具有急劇上升的照射強度分佈的光進行照射的用於周邊曝光裝置的光照射裝置。 As described above, according to the present invention, it is possible to realize a light for a peripheral exposure device which can suppress generation of pattern damage and can illuminate light having a sharply rising irradiation intensity distribution between a circuit pattern forming region and a wafer edge portion. Irradiation device.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下: In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:

1、2、3、4‧‧‧周邊曝光裝置 1, 2, 3, 4‧‧‧ peripheral exposure devices

10‧‧‧旋轉機構 10‧‧‧Rotating mechanism

10a‧‧‧XY工作臺 10a‧‧‧XY workbench

12‧‧‧旋轉電機 12‧‧‧Rotating motor

14‧‧‧電機軸 14‧‧‧Motor shaft

16‧‧‧旋轉夾頭 16‧‧‧Rotary chuck

20‧‧‧狹縫透光罩 20‧‧‧Slit translucent cover

100、200、300、400‧‧‧光照射裝置 100, 200, 300, 400‧‧‧ light irradiation devices

110‧‧‧光源單元 110‧‧‧Light source unit

112‧‧‧放電燈 112‧‧‧Discharge lamp

114‧‧‧橢圓反射鏡 114‧‧‧Oval mirror

116‧‧‧殼體 116‧‧‧Shell

116a‧‧‧前面板 116a‧‧‧ front panel

118‧‧‧固定件 118‧‧‧Fixed parts

120、220‧‧‧光導 120, 220‧‧‧ light guide

120a、220a‧‧‧入射端面 120a, 220a‧‧‧ incident end face

120b、220b‧‧‧出射端面 120b, 220b‧‧‧ exit end face

121、221‧‧‧光纖線 121, 221‧‧‧ fiber optic cable

122‧‧‧第一連接器 122‧‧‧First connector

124‧‧‧第二連接器 124‧‧‧Second connector

130、230‧‧‧照射頭 130, 230‧‧‧ illuminated head

131、231‧‧‧第一玻璃棒 131, 231‧‧‧ first glass rod

132、232‧‧‧第二玻璃棒 132, 232‧‧‧second glass rod

133、134‧‧‧透鏡 133, 134‧ ‧ lens

135‧‧‧反射鏡 135‧‧‧Mirror

331‧‧‧玻璃棒 331‧‧‧ glass rod

401‧‧‧電路基板 401‧‧‧ circuit board

402‧‧‧LED 402‧‧‧LED

403‧‧‧第一透鏡 403‧‧‧first lens

404‧‧‧第二透鏡 404‧‧‧second lens

405‧‧‧第三透鏡 405‧‧‧ third lens

410‧‧‧導光鏡 410‧‧‧Light guide

C‧‧‧中心 C‧‧‧ Center

CA‧‧‧電路圖形形成區域 CA‧‧‧Circuit pattern forming area

L‧‧‧光 L‧‧‧Light

PA‧‧‧照射圖形 PA‧‧‧ illumination graphics

PA1‧‧‧第一照射圖形 PA1‧‧‧ first illumination graphic

PA2‧‧‧第二照射圖形 PA2‧‧‧second illumination pattern

W‧‧‧基板 W‧‧‧Substrate

圖1(a)及1(b)是示出了搭載有本發明的第一實施方式所涉及的光照射裝置的周邊曝光裝置的概略結構的圖。 (a) and (b) of FIG. 1 are views showing a schematic configuration of a peripheral exposure apparatus on which a light irradiation device according to a first embodiment of the present invention is mounted.

圖2(a)及2(b)是本發明的第一實施方式涉及的光照射裝置中所配備的光導的結構說明圖。 2(a) and 2(b) are explanatory views of the structure of a light guide provided in the light irradiation device according to the first embodiment of the present invention.

圖3是示出了向本發明的第一實施方式涉及的光照射裝置中 所配備的光導的入射端面所射入的光的照射強度分佈的示意圖。 FIG. 3 is a view showing the light irradiation device according to the first embodiment of the present invention; Schematic diagram of the illumination intensity distribution of the light incident on the incident end face of the light guide.

圖4是從光導的出射端面側觀察本發明的第一實施方式涉及的光照射裝置中所配備的第一玻璃棒以及第二玻璃棒時的圖。 FIG. 4 is a view of the first glass rod and the second glass rod provided in the light irradiation device according to the first embodiment of the present invention as seen from the emission end surface side of the light guide.

圖5是示出了從本發明的第一實施方式所涉及的光照射裝置投射到基板的邊緣部周邊的光的照射圖形的圖。 FIG. 5 is a view showing an illumination pattern of light projected from the light irradiation device according to the first embodiment of the present invention to the periphery of the edge portion of the substrate.

圖6是示出了從本發明的第一實施方式所涉及的光照射裝置投射在基板的邊緣部周邊的照射圖形的照射強度分佈的示意圖。 FIG. 6 is a schematic diagram showing an irradiation intensity distribution of an irradiation pattern projected from the light irradiation device according to the first embodiment of the present invention around the edge portion of the substrate.

圖7(a)及7(b)是示出了搭載有本發明的第二實施方式所涉及的光照射裝置的周邊曝光裝置的概略結構圖。 (a) and (b) of FIG. 7 are schematic configuration diagrams showing a peripheral exposure apparatus in which the light irradiation device according to the second embodiment of the present invention is mounted.

圖8(a)及8(b)是說明本發明的第二實施方式所涉及的光照射裝置中所配備的光導結構的圖。 8(a) and 8(b) are views for explaining a light guide structure provided in the light irradiation device according to the second embodiment of the present invention.

圖9是從光導的出射端面側觀察本發明的第二實施方式涉及的光照射裝置中所配備的第一玻璃棒以及第二玻璃棒時的圖。 FIG. 9 is a view of the first glass rod and the second glass rod provided in the light irradiation device according to the second embodiment of the present invention as seen from the emission end surface side of the light guide.

圖10是說明從本發明的第二實施方式所涉及的光照射裝置投射到基板的邊緣部周邊的光的照射圖形的圖。 FIG. 10 is a view for explaining an irradiation pattern of light projected to the periphery of the edge portion of the substrate from the light irradiation device according to the second embodiment of the present invention.

圖11是示出了搭載有本發明的第三實施方式所涉及的光照射裝置的周邊曝光裝置的概略結構的圖。 FIG. 11 is a view showing a schematic configuration of a peripheral exposure apparatus in which the light irradiation device according to the third embodiment of the present invention is mounted.

圖12說明從本發明的第三實施方式所涉及的光照射裝置投射到基板的邊緣部周邊的光的照射圖形的圖。 FIG. 12 is a view for explaining an irradiation pattern of light projected to the periphery of the edge portion of the substrate from the light irradiation device according to the third embodiment of the present invention.

圖13是示出了搭載有本發明的第四實施方式所涉及的光照射裝置的周邊曝光裝置的概略結構圖。 FIG. 13 is a schematic configuration diagram showing a peripheral exposure apparatus on which the light irradiation device according to the fourth embodiment of the present invention is mounted.

圖14(a)及14(b)是說明本發明的第四實施方式所涉及的光照 射裝置的內部結構的圖。 14(a) and 14(b) are diagrams for explaining illumination according to a fourth embodiment of the present invention. A diagram of the internal structure of the device.

下面,結合附圖對本發明的實施方式做進一步的詳細說明。並且,圖中相同或相應的部位用相同的符號標記,其說明不再重複。 Hereinafter, embodiments of the present invention will be further described in detail with reference to the accompanying drawings. In addition, the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated.

(第一實施方式) (First embodiment)

圖1(a)及1(b)是示出了搭載有本發明的第一實施方式所涉及的光照射裝置100的周邊曝光裝置1的主要部位的概略結構的圖,圖1(a)是周邊曝光裝置1的平面圖,圖1(b)是周邊曝光裝置1的側面圖。本實施方式的周邊曝光裝置1是一種使圓盤形的基板W旋轉,且向基板W的邊緣部周邊進行光照射並為了去除邊緣部多餘的抗蝕劑而進行曝光的裝置,主要具備有使基板W旋轉的旋轉機構10、進行光照射的光照射裝置100。並且,在圖1(a)及1(b)_中,為便於說明,以XYZ正交坐標系表示,與基板W的表面(即,水平面)平行、且相互正交的2軸作為X軸及Y軸,與X軸及Y軸正交的軸作為Z軸表示,下面將恰當運用XYZ正交坐標系進行說明。 1(a) and 1(b) are diagrams showing a schematic configuration of a main part of a peripheral exposure apparatus 1 in which a light irradiation device 100 according to a first embodiment of the present invention is mounted, and Fig. 1(a) is a view A plan view of the peripheral exposure device 1 and FIG. 1(b) are side views of the peripheral exposure device 1. The peripheral exposure apparatus 1 of the present embodiment is a device that rotates the disk-shaped substrate W and irradiates the periphery of the edge portion of the substrate W with light to remove the excess resist at the edge portion. The rotating mechanism 10 in which the substrate W rotates and the light irradiation device 100 that performs light irradiation. In FIGS. 1(a) and 1(b), for convenience of explanation, the two axes orthogonal to the surface of the substrate W (that is, the horizontal plane) and orthogonal to each other are shown in the XYZ orthogonal coordinate system as the X-axis. The Y-axis and the axis orthogonal to the X-axis and the Y-axis are represented as the Z-axis, and the XYZ orthogonal coordinate system will be appropriately described below.

旋轉機構10具有旋轉電機12、電機軸14以及旋轉夾頭16。旋轉夾頭16是一種通過電機軸14與旋轉電機12連接,隨電機軸14的旋轉而旋轉的圓盤形部件,為便於基板W的中心C配置在旋轉電機12的旋轉軸AX上,從背面真空吸附基板W 以大致水準的姿勢固定。因此,旋轉電機12的旋轉動作通過電機軸14被傳送到旋轉夾頭16,固定在旋轉夾頭16上的基板W在XY平面內旋轉。 The rotating mechanism 10 has a rotary electric machine 12, a motor shaft 14, and a rotary chuck 16. The rotary chuck 16 is a disk-shaped member that is coupled to the rotary electric machine 12 via the motor shaft 14 and rotates in accordance with the rotation of the motor shaft 14. The center C of the substrate W is disposed on the rotary shaft AX of the rotary electric machine 12 from the rear surface. Vacuum adsorption substrate W Fixed in a roughly normal position. Therefore, the rotational motion of the rotary electric machine 12 is transmitted to the rotary collet 16 through the motor shaft 14, and the substrate W fixed to the rotary collet 16 is rotated in the XY plane.

光照射裝置100是一種在基板W的邊緣部周邊進行光照射的裝置,具備有光源單元110、光導120、照射頭130。 The light irradiation device 100 is a device that irradiates light around the edge portion of the substrate W, and includes a light source unit 110, a light guide 120, and an irradiation head 130.

光源單元110具備有放電燈112、反射放電燈112所放射出的光L的橢圓反射鏡114、收納放電燈112以及橢圓反射鏡114的殼體116。此外,在殼體116的前面板116a上,安裝有與光導120的第一連接器122(後述)連接,支撐並固定光導120的基端部側(入射端面120a側)的固定件118。 The light source unit 110 includes a discharge lamp 112, an elliptical mirror 114 that reflects the light L emitted from the discharge lamp 112, and a casing 116 that houses the discharge lamp 112 and the elliptical mirror 114. Further, on the front panel 116a of the casing 116, a fixing member 118 that is connected to the first connector 122 (described later) of the light guide 120 and supports and fixes the base end side (the incident end surface 120a side) of the light guide 120 is attached.

放電燈112是一種封入由汞或稀有氣體等組成的放電介質,在紫外線波長區域具有發射光譜的所謂的UV燈,以放電燈112的電弧亮點與橢圓反射鏡114的第一焦點位置大致一致的方式配置。 The discharge lamp 112 is a so-called UV lamp having a discharge medium composed of mercury or a rare gas and having an emission spectrum in an ultraviolet wavelength region, and the arc bright spot of the discharge lamp 112 substantially coincides with the first focus position of the elliptical mirror 114. Mode configuration.

橢圓反射鏡114是一種將放電燈112放射出的光L向光導120反射的碗形反射鏡,在本實施方式中,以通過橢圓反射鏡114反射的光L在光導120的入射端面120a上呈大致圓形聚光的方式構成。 The elliptical mirror 114 is a bowl-shaped mirror that reflects the light L emitted from the discharge lamp 112 toward the light guide 120. In the present embodiment, the light L reflected by the elliptical mirror 114 is on the incident end surface 120a of the light guide 120. It consists of a roughly circular concentrating method.

光導120是一種沿X軸方向對放電燈112放射出的光L進行導光的導光部件,由n條(比如,500條)光纖線121構成。光導120(即,n條光纖線121)的外周面通過未圖示的管包覆,在光導120的基端部側(入射端面120a側)的外周面,安裝有可連 接固定件118的第一連接器122。此外,在光導120的前端部側(出射端面120b側)的外周面,安裝有可連接照射頭130的第二連接器124。如圖1(a)及1(b)所示,第一連接器122與固定件118連接時,光導120的入射端面120a收納在殼體116內並配置在橢圓反射鏡114的第二焦點上,通過橢圓反射鏡114反射的光L射入光導120(即,n條光纖線121)內。 The light guide 120 is a light guiding member that guides the light L emitted from the discharge lamp 112 in the X-axis direction, and is composed of n (for example, 500) optical fiber lines 121. The outer peripheral surface of the light guide 120 (that is, the n optical fiber lines 121) is covered by a tube (not shown), and is attached to the outer peripheral surface of the light guide 120 at the proximal end side (the side of the incident end surface 120a). The first connector 122 of the fixture 118 is attached. Further, a second connector 124 to which the irradiation head 130 can be attached is attached to the outer peripheral surface of the front end portion side (the side of the emission end surface 120b) of the light guide 120. As shown in FIGS. 1(a) and 1(b), when the first connector 122 is coupled to the fixture 118, the incident end surface 120a of the light guide 120 is housed in the housing 116 and disposed at the second focus of the elliptical mirror 114. The light L reflected by the elliptical mirror 114 is incident into the light guide 120 (i.e., n optical fiber lines 121).

圖2(a)及2(b)是本實施方式的光導120中的光纖線121的結構說明圖,圖2(a)是從放電燈112側觀察入射端面120a時的圖,圖2(b)是從照射頭130側觀察出射端面120b時的圖。 2(a) and 2(b) are diagrams for explaining the structure of the optical fiber line 121 in the light guide 120 of the present embodiment, and Fig. 2(a) is a view when the incident end surface 120a is viewed from the discharge lamp 112 side, and Fig. 2(b) It is a figure which looked at the exit end surface 120b from the irradiation head 130 side.

如圖2(a)所示,在本實施方式的光導120的入射端面120a,n條光纖線121收攏成大致圓形,大致n/2條(即,大概250條左右)的光纖線121配置在中心部A1(例如,從入射端面120a的中心到半徑3mm的部分),大致n/2條(即,大概250條左右)的光纖線121配置在周邊部A2(圖2(a)中灰色所示部分)。 As shown in FIG. 2(a), in the incident end surface 120a of the light guide 120 of the present embodiment, the n optical fiber lines 121 are gathered into a substantially circular shape, and approximately n/2 strips (that is, approximately 250 or so) of the optical fiber lines 121 are disposed. In the center portion A1 (for example, from the center of the incident end surface 120a to a portion having a radius of 3 mm), approximately n/2 strips (i.e., approximately 250 strips) of the optical fiber line 121 are disposed in the peripheral portion A2 (gray in Fig. 2(a) The part shown).

此外,如圖2(b)所示,本實施方式的光導120的出射端面120b,n條光纖線121收攏成大致矩形,在入射端面120a中配置在中心部A1的大致n/2條(即,大概250條左右)的光纖線121以隨機組合的方式配置在矩形的第一區域B1內,在入射端面120a中配置在周邊部A2的大致n/2條(即,大概250條左右)的光纖線121以隨機組合的方式配置在矩形的第二區域B2(圖2(b)中灰色所示部分)內。 Further, as shown in FIG. 2(b), in the emission end surface 120b of the light guide 120 of the present embodiment, the n optical fiber lines 121 are gathered in a substantially rectangular shape, and are arranged in the incident end surface 120a at substantially n/2 of the central portion A1 (ie, The optical fiber lines 121 of approximately 250 or so are arranged in a random combination in the first region B1 of the rectangle, and are arranged in the incident end surface 120a at substantially n/2 of the peripheral portion A2 (that is, approximately 250 or so). The optical fiber lines 121 are arranged in a random combination in the rectangular second region B2 (the portion shown by the gray in Fig. 2(b)).

如上所示,在本實施方式的光導120中,在入射端 面120a配置在中心部A1的大致n/2條(即,大概250條左右)的光纖線121、以及在入射端面120a配置在周邊部A2的大致n/2條(即,大概250條左右)的光纖線121,在出射端面120b分別配置在不同的區域(即,第一區域B1以及第二區域B2)內。 As shown above, in the light guide 120 of the present embodiment, at the incident end The surface 120a is disposed in substantially n/2 strips (i.e., about 250 or so) of the optical fiber line 121 of the center portion A1, and substantially n/2 strips (i.e., about 250) disposed on the incident end surface 120a in the peripheral portion A2. The optical fiber lines 121 are disposed in different regions (i.e., the first region B1 and the second region B2) on the emission end faces 120b.

圖3是示出了射入光導120的入射端面120a內的光L的照射強度分佈的示意圖,橫軸表示以入射端面120a的中心作為0mm的距離(mm),縱軸表示最大強度為1.0時的相對強度。如圖3所示,射入光導120的入射端面120a的光L,因具有入射端面120a的中心為最高峰的山字形照射強度分佈,所以向配置在入射端面120a的中心部A1(從入射端面120a的中心開始的距離為3mm以內的部分)的光纖線121,射入相對強度為0.5以上的光L,向配置在入射端面120a的周邊部A2(從入射端面120a的中心開始的距離為3mm以外的部分)的光纖線121,射入相對強度為0.5以下的光L。因此,從光導120的出射端面120b的第一區域B1以及第二區域B2,各自射出照射強度不同的光L。 3 is a schematic view showing an irradiation intensity distribution of light L incident on the incident end surface 120a of the light guide 120, the horizontal axis represents a distance (mm) of 0 mm from the center of the incident end surface 120a, and the vertical axis represents a maximum intensity of 1.0. Relative strength. As shown in FIG. 3, the light L incident on the incident end surface 120a of the light guide 120 has a mountain-shaped irradiation intensity distribution having the highest peak at the center of the incident end surface 120a, so that it is disposed at the center portion A1 of the incident end surface 120a (from the incident end surface). The optical fiber 121 of the portion having a distance of 3 mm or less from the center of 120a is incident on the light L having a relative intensity of 0.5 or more, and is disposed on the peripheral portion A2 of the incident end surface 120a (the distance from the center of the incident end surface 120a is 3 mm). The optical fiber 121 of the other portion is incident on the light L having a relative intensity of 0.5 or less. Therefore, the light L having different irradiation intensities is emitted from the first region B1 and the second region B2 of the emission end surface 120b of the light guide 120.

照射頭130是一種與光導120的第二連接器124連接,收納光導120的前端部側(出射端面120b側),將出射端面120b射出的光L導光並投射至基板W的邊緣部周邊的構件(圖1(a)及1(b))。如圖1(a)及1(b)所示,照射頭130具備有:對出射端面120b的第一區域B1所射出的光L進行導光的第一玻璃棒131;對出射端面120b的第二區域B2所射出的光L進行導光的第二玻璃棒132;將第一玻璃棒131以及第二玻璃棒132所射出的光L投射 至基板W的邊緣部周邊的透鏡133、134;配置在透鏡133和透鏡134之間,將透鏡133射出的光L的光路90度折彎的反射鏡135。並且,本實施方式的照射頭130,通過未圖示的懸臂固定在基板W的上方。此外,本實施方式中,在照射頭130與基板W之間,設有形成矩形縫隙(未圖示)的狹縫透光罩20,照射頭130射出的光L穿過形成在狹縫透光罩內的矩形縫隙(未圖示),由此而去除雜散光,且指定的矩形照射圖形PA被投射到基板W的邊緣部周邊(圖4)。 The irradiation head 130 is connected to the second connector 124 of the light guide 120, and houses the front end side (the side of the emission end surface 120b) of the light guide 120, and guides the light L emitted from the emission end surface 120b to the periphery of the edge portion of the substrate W. Components (Fig. 1 (a) and 1 (b)). As shown in FIGS. 1(a) and 1(b), the irradiation head 130 includes a first glass rod 131 that guides light L emitted from the first region B1 of the emission end surface 120b, and a first glass rod 131 that faces the emission end surface 120b. The second glass rod 132 that guides the light L emitted from the two regions B2; the light L emitted from the first glass rod 131 and the second glass rod 132 is projected The lenses 133 and 134 to the periphery of the edge portion of the substrate W, and the mirror 135 which is disposed between the lens 133 and the lens 134 and bends the optical path of the light L emitted from the lens 133 by 90 degrees. Further, the irradiation head 130 of the present embodiment is fixed above the substrate W by a cantilever (not shown). Further, in the present embodiment, a slit transmissive cover 20 forming a rectangular slit (not shown) is provided between the irradiation head 130 and the substrate W, and the light L emitted from the irradiation head 130 is transmitted through the slit. A rectangular slit (not shown) in the cover removes stray light, and the designated rectangular illumination pattern PA is projected to the periphery of the edge portion of the substrate W (Fig. 4).

圖4是從光導120的出射端面120b側觀察本實施方式的第一玻璃棒131以及第二玻璃棒132時的圖。如圖1(b)及圖4所示,第一玻璃棒131是一種其橫截面具有與出射端面120b的第一區域B1大致相同形狀的方柱形玻璃棒,將第一區域B1射出的光L混合的同時沿著X軸方嚮導光,向透鏡133射出。此外,第二玻璃棒132是一種其橫截面具有與出射端面120b的第二區域B2大致相同形狀的方柱形玻璃棒,將第二區域B2射出的光L混合的同時沿著X軸方嚮導光,向透鏡133射出。 FIG. 4 is a view of the first glass rod 131 and the second glass rod 132 of the present embodiment as seen from the emission end surface 120b side of the light guide 120. As shown in FIG. 1(b) and FIG. 4, the first glass rod 131 is a square cylindrical glass rod having a cross section having substantially the same shape as the first area B1 of the exit end surface 120b, and the light emitted from the first area B1. L is mixed while guiding light in the X-axis direction, and is emitted toward the lens 133. Further, the second glass rod 132 is a square cylindrical glass rod having a cross section having substantially the same shape as the second area B2 of the exit end surface 120b, and the light L emitted from the second area B2 is mixed while being guided along the X-axis direction. Light is emitted to the lens 133.

如圖1(b)所示,透過透鏡133的光L,通過反射鏡135反射至Z軸方向(即,在圖1(b)中向下),穿過透鏡134、狹縫透光罩20的矩形狹縫(未圖示),投射至基板W的邊緣部周邊。本實施方式的透鏡133、134是構成所謂投影光學系的透鏡,第一玻璃棒131以及第二玻璃棒132射出的光L的光束按指定倍率擴大(或縮小),投射到基板W的邊緣部周邊。並且,在圖1(b)中, 本實施方式的透鏡133、134,各自以雙凸透鏡示出,但並非局限於該結構,也可以由組合雙凸透鏡、平凸透鏡、凹凸透鏡等的透鏡組構成。 As shown in FIG. 1(b), the light L transmitted through the lens 133 is reflected by the mirror 135 to the Z-axis direction (i.e., downward in FIG. 1(b)), through the lens 134, and the slit transmissive cover 20 A rectangular slit (not shown) is projected to the periphery of the edge portion of the substrate W. The lenses 133 and 134 of the present embodiment are lenses constituting a so-called projection optical system, and the light beams of the light L emitted from the first glass rod 131 and the second glass rod 132 are enlarged (or reduced) at a predetermined magnification, and are projected onto the edge portion of the substrate W. Surroundings. And, in Figure 1(b), The lenses 133 and 134 of the present embodiment are each illustrated by a lenticular lens. However, the present invention is not limited to this configuration, and may be composed of a lens group in which a lenticular lens, a plano-convex lens, a meniscus lens, or the like is combined.

並且,如上所述,本實施方式中,為了去除雜散光等,在照射頭130與基板W之間設有狹縫透光罩20,但是如果雜散光等多餘光不會成為問題時,也可以不採用狹縫透光罩20,透過透鏡134的光L(即,矩形光束)直接投射在基板W上。 Further, as described above, in the present embodiment, the slit transmissive cover 20 is provided between the irradiation head 130 and the substrate W in order to remove stray light or the like. However, if unnecessary light such as stray light does not cause a problem, Without the slit transmissive cover 20, the light L (i.e., a rectangular beam) transmitted through the lens 134 is directly projected onto the substrate W.

圖5是說明從本實施方式的光照射裝置100投射至基板W的邊緣部周邊的光L的照射圖形PA的圖。如上所述,本實施方式中,因從光導120的出射端面120b射出的光L通過第一玻璃棒131以及第二玻璃棒132,按指定倍率擴大(或縮小),穿過狹縫透光罩20的矩形縫隙(未圖示)投射至基板W的邊緣部周邊,所以,如圖5所示,與狹縫透光罩20的縫隙(未圖示)大小大致相同的矩形照射圖形PA投射至基板W的邊緣部周邊。並且,如上所述,照射圖形PA是結合穿過第一玻璃棒131的光L和穿過第二玻璃棒132的光L而形成的,但是穿過透鏡133沿X軸方向前進的光L,通過反射鏡135向下(即,Z軸方向)折彎,因此,由穿過第一玻璃棒131的光L(即,從出射端面120b的第一區域B1射出的光L)所形成的第一照射圖形PA1,比由穿過第二玻璃棒132的光L(即,從出射端面120b的第二區域B2射出的光L)所形成的第二照射圖形PA2,要更靠近基板W的內側。此外,如圖5所示,本實施方式中,為了使第一照射圖形PA1和第二照射 圖形PA2的分界線與基板W的切線基本一致,第一照射圖形PA1位於基板W的電路圖形形成區域CA和基板W的邊緣部之間,將照射頭130定位在基板W的上方並固定。 FIG. 5 is a view for explaining an irradiation pattern PA of light L projected from the light irradiation device 100 of the present embodiment to the periphery of the edge portion of the substrate W. As described above, in the present embodiment, the light L emitted from the exit end surface 120b of the light guide 120 passes through the first glass rod 131 and the second glass rod 132, and is enlarged (or reduced) at a predetermined magnification, and passes through the slit transmissive cover. A rectangular slit (not shown) of 20 is projected to the periphery of the edge portion of the substrate W. Therefore, as shown in FIG. 5, a rectangular irradiation pattern PA having substantially the same size as a slit (not shown) of the slit translucent cover 20 is projected to The periphery of the edge portion of the substrate W. Also, as described above, the illumination pattern PA is formed by combining the light L passing through the first glass rod 131 and the light L passing through the second glass rod 132, but the light L traveling through the lens 133 in the X-axis direction, The mirror 135 is bent downward (i.e., in the Z-axis direction), and therefore, the light L passing through the first glass rod 131 (i.e., the light L emitted from the first region B1 of the exit end surface 120b) is formed. The second illumination pattern PA2 formed by the illumination pattern PA1 is closer to the inner side of the substrate W than the second illumination pattern PA2 formed by the light L passing through the second glass rod 132 (i.e., the light L emitted from the second region B2 of the exit end surface 120b). . Further, as shown in FIG. 5, in the present embodiment, in order to make the first illumination pattern PA1 and the second illumination The boundary line of the pattern PA2 substantially coincides with the tangent of the substrate W. The first illumination pattern PA1 is located between the circuit pattern formation area CA of the substrate W and the edge portion of the substrate W, and the illumination head 130 is positioned above the substrate W and fixed.

圖6是示出了投射在基板W的邊緣部周邊的照射圖形PA的X軸方向的照射強度分佈的示意圖,橫軸表示第一照射圖形PA1與第二照射圖形PA2的分界線(即,基板W的切線)的位置為0mm時的X軸方向的距離(mm),縱軸表示最大強度為1.0時的相對強度。如上所述,在本實施方式中,配置在光導120的入射端面120a的中心部A1上的光纖線121,射入相對強度為0.5以上的光L,配置在周邊部A2上的光纖線121,射入相對強度為0.5以下的光L,因此,從光導120的出射端面120b的第一區域B1射出的光L的照射強度,比從第二區域B2射出的光L的照射強度要高。因而如圖6所示,由第一區域B1射出的光L所形成的第一照射圖形PA1的照射強度(即,圖6的距離0mm至2mm範圍內的照射強度),比由第二區域B2射出的光L所形成的第二照射圖形PA2的照射強度(即,圖6的距離-2mm至-0.2mm範圍內的照射強度)要高,在相當於基板W的電路圖形形成區域CA的端部(圖5)的位置(即,在圖6的距離2mm的位置),變為急劇上升的照射強度分佈。 6 is a schematic view showing an irradiation intensity distribution in the X-axis direction of the illumination pattern PA projected around the edge portion of the substrate W, and the horizontal axis represents the boundary line between the first illumination pattern PA1 and the second illumination pattern PA2 (ie, the substrate). The position of the tangent line of W is 0 mm in the X-axis direction (mm), and the vertical axis represents the relative intensity when the maximum intensity is 1.0. As described above, in the present embodiment, the optical fiber line 121 disposed on the central portion A1 of the incident end surface 120a of the light guide 120 receives the light L having a relative intensity of 0.5 or more, and is disposed on the optical fiber line 121 on the peripheral portion A2. Since the light L having a relative intensity of 0.5 or less is incident, the irradiation intensity of the light L emitted from the first region B1 of the emission end surface 120b of the light guide 120 is higher than the irradiation intensity of the light L emitted from the second region B2. Therefore, as shown in FIG. 6, the irradiation intensity of the first illumination pattern PA1 formed by the light L emitted from the first region B1 (that is, the irradiation intensity in the range of 0 mm to 2 mm in FIG. 6) is larger than that of the second region B2. The irradiation intensity of the second irradiation pattern PA2 formed by the emitted light L (that is, the irradiation intensity in the range of -2 mm to -0.2 mm in Fig. 6) is high, at the end of the circuit pattern forming region CA corresponding to the substrate W. The position of the portion (Fig. 5) (i.e., the position at a distance of 2 mm in Fig. 6) becomes a sharply rising irradiation intensity distribution.

此外,如上所述,因配置在第一區域B1以及第二區域B2的光纖線121,各自隨機組合排列,所以使從第一區域B1以及第二區域B2射出的光L的照射強度平均化。因此,由第 一區域B1射出的光L所形成的第一照射圖形PA1的照射強度在X軸方向以及Y軸方向上大致均勻,同樣,由第二區域B2射出的光L所形成的第二照射圖形PA2的照射強度在X軸方向以及Y軸方向上大致均勻。 Further, as described above, since the optical fibers 121 disposed in the first region B1 and the second region B2 are randomly arranged in combination, the irradiation intensity of the light L emitted from the first region B1 and the second region B2 is averaged. Therefore, by the first The irradiation intensity of the first illumination pattern PA1 formed by the light L emitted from the area B1 is substantially uniform in the X-axis direction and the Y-axis direction, and similarly, the second illumination pattern PA2 formed by the light L emitted from the second area B2 The irradiation intensity is substantially uniform in the X-axis direction and the Y-axis direction.

並且,本實施方式中,雖然第二照射圖形PA2的照射強度,為相對第一照射圖形PA1的照射強度的大約0.3倍,但是為了去除基板W的邊緣部周邊多餘的抗蝕劑,設定為最低要求的照射強度。 Further, in the present embodiment, the irradiation intensity of the second irradiation pattern PA2 is approximately 0.3 times the irradiation intensity with respect to the first irradiation pattern PA1, but is set to be the lowest in order to remove excess resist around the edge portion of the substrate W. Required intensity of illumination.

如上所述,本實施方式的光照射裝置100中,將在光導120的入射端面120a配置在中心部A1的光纖線121、以及在入射端面120a配置在周邊部A2的光纖線121,在出射端面120b各自分在不同的區域(即,第一區域B1以及第二區域B2)設置,由此,基板W內側的照射強度高,將在基板W的電路圖形形成區域CA端部的急劇上升的(即,不太平緩)照射強度分佈的照射圖形PA投射至基板W的邊緣部周邊。因此,可以準確保留電路圖形形成區域CA的抗蝕劑,同時也可以準確地去除基板W邊緣部的抗蝕劑。 As described above, in the light irradiation device 100 of the present embodiment, the optical fiber line 121 disposed at the center portion A1 of the incident end surface 120a of the light guide 120 and the optical fiber line 121 disposed at the peripheral portion A2 at the incident end surface 120a are formed at the exit end face. Each of 120b is disposed in a different region (i.e., the first region B1 and the second region B2), whereby the irradiation intensity inside the substrate W is high, and the end portion of the circuit pattern forming region CA of the substrate W rises sharply ( That is, the irradiation pattern PA of the irradiation intensity distribution is projected to the periphery of the edge portion of the substrate W. Therefore, the resist of the circuit pattern forming region CA can be accurately retained, and the resist at the edge portion of the substrate W can be accurately removed.

此外,位於基板W外側的第二照射圖形PA2的照射強度,被設定成為了去除基板W邊緣部周邊的多餘抗蝕劑的最低要求的照射強度(即,被抑制),因此,抑制了由於光學部件或抗蝕面的反射等引起的意想不到的雜散光的產生,也就抑制了所謂的圖形損壞的產生。 Further, the irradiation intensity of the second irradiation pattern PA2 located outside the substrate W is set to the minimum required irradiation intensity (ie, suppressed) of removing the excess resist around the edge portion of the substrate W, and therefore, the optical Unexpected generation of stray light caused by reflection of components or resist surfaces, etc., suppresses the occurrence of so-called pattern damage.

以上是結合本實施方式所做出的說明,但本發明並非局限於上述構成,在本發明的技術性思想範圍內可以進行各種變形。 The above description has been made in connection with the present embodiment, but the present invention is not limited to the above configuration, and various modifications can be made within the scope of the technical idea of the present invention.

例如,本實施方式的周邊曝光裝置1,雖然以一種向圓盤形基板W的邊緣部周邊進行光照射的裝置進行了說明,但是基板W可以是具有定向平面部的形狀,也可以是用於液晶等的矩形基板。並且,假設基板W為矩形時,採用使基板在XY平面內移動的XY工作臺來替代使基板W旋轉的旋轉機構10,為便於照射頭130射出的光L沿基板W的邊緣部相對移動,只需使XY工作臺移動即可。 For example, although the peripheral exposure apparatus 1 of the present embodiment has been described as an apparatus that irradiates light to the periphery of the edge portion of the disk-shaped substrate W, the substrate W may have a shape having an oriented flat portion, or may be used for A rectangular substrate such as a liquid crystal. Further, when the substrate W is rectangular, an XY table that moves the substrate in the XY plane is used instead of the rotation mechanism 10 that rotates the substrate W, and the light L emitted from the irradiation head 130 is relatively moved along the edge portion of the substrate W. Just move the XY table.

此外,本實施方式的光導120中,其構成為:光導120的入射端面120a上配置在中心部A1的大致n/2條(即,250條左右)的光纖線121分配在出射端面120b的第一區域B1上,入射端面120a配置在周邊部A2的大致n/2條(即,250左右)的光纖線121分配在出射端面120b的第二區域B2上,但並非局限於該分配,只要能使基板W內側的照射強度變為最高,在基板W的電路圖形形成區域CA形成急劇上升的(即,不太平緩)照射強度分佈的照射圖形PA即可。 Further, in the light guide 120 of the present embodiment, the optical fiber line 121 of the substantially n/2 (i.e., about 250) optical fibers 121 disposed on the incident end surface 120a of the light guide 120 is disposed on the output end surface 120b. In a region B1, the optical fiber line 121 of the incident end surface 120a disposed at substantially n/2 (i.e., about 250) of the peripheral portion A2 is distributed on the second region B2 of the exit end surface 120b, but is not limited to the distribution, as long as The irradiation intensity on the inner side of the substrate W is maximized, and the irradiation pattern PA in which the irradiation intensity distribution is sharply increased (that is, not slick) is formed in the circuit pattern formation region CA of the substrate W.

(第二實施方式) (Second embodiment)

圖7(a)及7(b)是示出了搭載有本發明的第二實施方式所涉及的光照射裝置200的周邊曝光裝置2的主要部位的概略結構的圖,圖7(a)是周邊曝光裝置2的平面圖,圖7(b)是周邊曝 光裝置2的側面圖。如圖7(a)及7(b)所示,本實施方式的周邊曝光裝置2,照射頭230以及旋轉機構10沿Y軸方向排列,從照射頭230射出的光L投射至基板W的Y軸方向的邊緣部周邊,這一點與第一實施方式的周邊曝光裝置不同。此外,伴隨照射頭230射出的光L的投影位置的不同,光導220以及照射頭230的結構與第一實施方式的光導120以及照射頭130也不同。以下,針對與第一實施方式的不同點進行詳細說明。 (a) and (b) of FIG. 7 are views showing a schematic configuration of a main part of the peripheral exposure device 2 in which the light irradiation device 200 according to the second embodiment of the present invention is mounted, and FIG. 7(a) is a view. The plan view of the peripheral exposure device 2, Figure 7 (b) is the peripheral exposure Side view of the optical device 2. As shown in FIGS. 7(a) and 7(b), in the peripheral exposure device 2 of the present embodiment, the irradiation head 230 and the rotation mechanism 10 are arranged in the Y-axis direction, and the light L emitted from the irradiation head 230 is projected onto the Y of the substrate W. This is different from the peripheral exposure device of the first embodiment in the periphery of the edge portion in the axial direction. Further, the configuration of the light guide 220 and the illumination head 230 differs from the light guide 120 and the illumination head 130 of the first embodiment in accordance with the difference in the projection position of the light L emitted from the irradiation head 230. Hereinafter, differences from the first embodiment will be described in detail.

圖8(a)及8(b)是說明本實施方式的光導220的光纖線221結構的圖。圖8(a)是從放電燈112側觀察入射端面220a時的圖,圖8(b)是從照射頭230側觀察出射端面220b時的圖。此外,圖9是從光導220的出射端面220b側觀察本實施方式的照射頭230的第一玻璃棒231以及第二玻璃棒232時的圖。 8(a) and 8(b) are views for explaining the configuration of the optical fiber 221 of the light guide 220 of the present embodiment. Fig. 8(a) is a view when the incident end surface 220a is viewed from the discharge lamp 112 side, and Fig. 8(b) is a view when the emission end surface 220b is viewed from the irradiation head 230 side. In addition, FIG. 9 is a view of the first glass rod 231 and the second glass rod 232 of the irradiation head 230 of the present embodiment as seen from the emission end surface 220b side of the light guide 220.

如圖8(a)所示,本實施方式的光導220,與第二實施方式的光導120一樣,在入射端面220a上,n條光纖線221收攏成大致圓形,大致n/2條(即,250條左右)的光纖線221配置在中心部A1(比如,從入射端面220a的中心到半徑3mm的部分),大致n/2條(即,250條左右)的光纖線221配置在周邊部A2(圖8(a)中灰色所示部分)。 As shown in FIG. 8(a), in the light guide 220 of the present embodiment, as in the light guide 120 of the second embodiment, the n optical fiber lines 221 are gathered in a substantially circular shape on the incident end surface 220a, and are substantially n/2 (ie, The optical fiber line 221 of about 250 pieces is disposed at the center portion A1 (for example, from the center of the incident end surface 220a to a portion having a radius of 3 mm), and approximately n/2 strips (i.e., about 250 pieces) of the optical fiber line 221 are disposed at the peripheral portion. A2 (the part shown in gray in Figure 8(a)).

然而,如圖8(b)所示,本實施方式的光導220的出射端面220b中,入射端面220a上配置在中心部A1的大致n/2條(即,250條左右)的光纖線221隨機排列配置的第一區域B1、以及入射端面220a上配置在周邊部A2的大致n/2條(即,250條 左右)的光纖線221隨機排列配置的第二區域B2(圖8(b)中灰色所示部分),並排配置在左右方向(即,Y軸方向),這一點與第一實施方式的光導120不同。 However, as shown in FIG. 8(b), in the emission end surface 220b of the light guide 220 of the present embodiment, substantially n/2 strips (i.e., about 250 strips) of the optical fiber lines 221 disposed on the incident end surface 220a in the central portion A1 are random. The first region B1 and the incident end surface 220a arranged in the array are substantially n/2 (ie, 250) disposed in the peripheral portion A2. The second region B2 (the portion shown by the gray in FIG. 8(b)) in which the optical fiber lines 221 of the left and right are randomly arranged are arranged side by side in the left-right direction (that is, the Y-axis direction), which is the same as the light guide 120 of the first embodiment. different.

此外,如圖7(a)以及圖9所示,本實施方式的第一玻璃棒231以及第二玻璃棒232,也是按照第一區域B1以及第二區域B2的配置,並排配置在左右方向(即,Y軸方向)。 Further, as shown in FIGS. 7( a ) and 9 , the first glass rod 231 and the second glass rod 232 of the present embodiment are arranged side by side in the left-right direction in accordance with the arrangement of the first region B1 and the second region B2 ( That is, the Y-axis direction).

圖10是說明從本實施形式的光照射裝置200投射至基板W的邊緣部周邊的光L的照射圖形PA的圖。如上所述,本實施方式中,光導220的出射端面220b的第一區域B1以及第二區域B2排列在Y軸方向,此外第一玻璃棒231以及第二玻璃棒232也排列在Y軸方向,因此如圖10所示,由穿過第一玻璃棒231的光L(即,從出射端面220b的第一區域B1射出的光L)所形成的第一照射圖形PA1以及由穿過第二玻璃棒232的光L(即,從出射端面220b的第二區域B2射出的光L)所形成的第二照射圖形PA2也排列在Y軸方向。此外,與第一實施方式一樣,第一照射圖形PA1比第二照射圖形PA2更靠近基板W的內側,第一照射圖形PA1與第二照射圖形PA2的分界線與基板W的切線大致一致,第一照射圖形PA1位於基板W的電路圖形形成區域CA與基板W的邊緣部之間。 FIG. 10 is a view for explaining an irradiation pattern PA of light L projected from the light irradiation device 200 of the present embodiment to the periphery of the edge portion of the substrate W. As described above, in the present embodiment, the first region B1 and the second region B2 of the exit end face 220b of the light guide 220 are arranged in the Y-axis direction, and the first glass rod 231 and the second glass rod 232 are also arranged in the Y-axis direction. Therefore, as shown in FIG. 10, the first illumination pattern PA1 formed by the light L passing through the first glass rod 231 (i.e., the light L emitted from the first region B1 of the exit end surface 220b) and the passage through the second glass The second illumination pattern PA2 formed by the light L of the rod 232 (that is, the light L emitted from the second region B2 of the emission end surface 220b) is also arranged in the Y-axis direction. Further, as in the first embodiment, the first illumination pattern PA1 is closer to the inner side of the substrate W than the second illumination pattern PA2, and the boundary between the first illumination pattern PA1 and the second illumination pattern PA2 substantially coincides with the tangent of the substrate W, An illumination pattern PA1 is located between the circuit pattern forming region CA of the substrate W and the edge portion of the substrate W.

因此,根據本實施方式的結構,基板W內側的照射強度高,並可以將基板W的電路圖形形成區域CA的端部的急劇上升的(即,不太平緩)照射強度分佈的照射圖形PA投射至基板W 的邊緣部周邊。為此,可準確地保留電路圖形形成區域CA的抗蝕劑,同時還可以準確地去除基板W邊緣部的抗蝕劑。 Therefore, according to the configuration of the present embodiment, the irradiation intensity inside the substrate W is high, and the irradiation pattern PA of the sharply rising (that is, not gradual) irradiation intensity distribution of the end portion of the circuit pattern forming region CA of the substrate W can be projected. To the substrate W The periphery of the edge. For this reason, the resist of the circuit pattern forming region CA can be accurately retained while the resist of the edge portion of the substrate W can be accurately removed.

(第三實施方式) (Third embodiment)

圖11示出了搭載有本發明的第三實施方式所涉及的光照射裝置300的周邊曝光裝置3的主要部位的概略結構的平面圖。本實施方式的光照射裝置300,其照射頭330具有1根玻璃棒331,以光導220的出射端面220b的第一區域B1以及第二區域B2射出的光L通過玻璃棒331導光的方式構成,這一點與第二實施方式的光照射裝置200不同。 FIG. 11 is a plan view showing a schematic configuration of a main part of the peripheral exposure device 3 in which the light irradiation device 300 according to the third embodiment of the present invention is mounted. In the light irradiation device 300 of the present embodiment, the irradiation head 330 has one glass rod 331, and the light L emitted from the first region B1 and the second region B2 of the emission end surface 220b of the light guide 220 is guided by the glass rod 331. This is different from the light irradiation device 200 of the second embodiment.

圖12是示出了從本實施方式的光照射裝置300投射至基板W的邊緣部周邊的照射圖形PA(圖10)的Y軸方向的照射強度分佈的示意圖,橫軸表示第一照射圖形PA1與第二照射圖形PA2的分界線(即,基板W的切線)的位置為Omm時Y軸方向的距離(mm),縱軸表示最大強度為1.0時的相對強度。如上所述,在本實施方式中,因光導220的出射端面220b的第一區域B1以及第二區域B2所射出光L通過1根玻璃棒331進行導光,第一區域B1射出的光L和第二區域B2射出的光L在玻璃棒331的內部被混合,但是如圖12所示,按本實施方式的結構所投射的照射圖形PA,在基板W的內側照射強度為最高,在相當於基板W的電路圖形形成區域CA的端部位置(即,在圖12的距離2mm的位置),為急劇上升的(即,不太平緩)照射強度分佈。由此,與第一以及第二的實施方式相同,可以準確地保留電路圖形形成區域 CA的抗蝕劑,也可以準確地去除基板W邊緣部的抗蝕劑。 FIG. 12 is a schematic diagram showing an irradiation intensity distribution in the Y-axis direction of the irradiation pattern PA (FIG. 10) projected from the light irradiation device 300 of the present embodiment to the periphery of the edge portion of the substrate W, and the horizontal axis represents the first irradiation pattern PA1. The position of the boundary line of the second irradiation pattern PA2 (that is, the tangent to the substrate W) is the distance (mm) in the Y-axis direction when Omm is 0 mm, and the vertical axis indicates the relative intensity when the maximum intensity is 1.0. As described above, in the present embodiment, the light L emitted from the first region B1 and the second region B2 of the emission end surface 220b of the light guide 220 is guided by one glass rod 331, and the light L emitted from the first region B1 and The light L emitted from the second region B2 is mixed inside the glass rod 331, but as shown in Fig. 12, the irradiation pattern PA projected by the structure of the present embodiment has the highest irradiation intensity on the inside of the substrate W, which is equivalent to The end position of the circuit pattern forming region CA of the substrate W (that is, the position at a distance of 2 mm in FIG. 12) is a sharply rising (that is, not gradual) irradiation intensity distribution. Thereby, as in the first and second embodiments, the circuit pattern forming region can be accurately retained The resist of CA can also accurately remove the resist at the edge portion of the substrate W.

(第四實施方式) (Fourth embodiment)

圖13是示出了搭載有本發明的第四實施方式所涉及的光照射裝置400的周邊曝光裝置的主要部位的概略結構的側面圖。本實施方式的周邊曝光裝置4是一種向矩形基板W的邊緣部周邊進行光照射且為了去除邊緣部(例如,從基板W的端部至70mm寬度的框形區域)多餘的抗蝕劑而進行曝光的裝置,採用XY工作臺10a來替代旋轉機構10,這一點與第一至第三實施方式的周邊曝光裝置1、2、3不同。此外,本實施方式的光照射裝置400,具備有多個LED(Light Emitting Diode)402用作光源,通過從LED 402射出的光形成照射圖形PA,並投射至基板W的邊緣部周邊,這一點與第一至第三實施方式的光照射裝置100、200、300不同。 FIG. 13 is a side view showing a schematic configuration of a main part of a peripheral exposure apparatus in which the light irradiation device 400 according to the fourth embodiment of the present invention is mounted. The peripheral exposure device 4 of the present embodiment performs light irradiation on the periphery of the edge portion of the rectangular substrate W and removes excess resist in order to remove the edge portion (for example, a frame-shaped region from the end portion of the substrate W to a width of 70 mm). The exposure apparatus is different from the peripheral exposure apparatuses 1, 2, and 3 of the first to third embodiments in that the XY table 10a is used instead of the rotation mechanism 10. Further, the light irradiation device 400 of the present embodiment includes a plurality of LEDs (Light Emitting Diodes) 402 as light sources, and the irradiation pattern PA is formed by the light emitted from the LEDs 402, and is projected onto the periphery of the edge portion of the substrate W. The light irradiation devices 100, 200, and 300 of the first to third embodiments are different.

XY工作臺10a是一種將基板W固定,使基板W相對的兩對邊各自朝向X軸方向以及Y軸方向,並使基板W在XY平面內移動的機構。本實施方式的XY工作臺10a,使基板W在XY平面內移動,以便光照射裝置400射出的光L沿著基板W的邊緣部相對移動。 The XY table 10a is a mechanism for fixing the substrate W such that the opposite sides of the substrate W face the X-axis direction and the Y-axis direction, and move the substrate W in the XY plane. The XY table 10a of the present embodiment moves the substrate W in the XY plane so that the light L emitted from the light irradiation device 400 relatively moves along the edge portion of the substrate W.

圖14(a)及14(b)是說明本實施方式的光照射裝置400的內部結構的圖,圖14(a)是從Y軸方向觀察光照射裝置400時的圖,圖14(b)是從Z軸方向觀察光照射裝置400時(即,從圖14(a)的下側觀察時)的圖。 FIGS. 14(a) and 14(b) are diagrams for explaining an internal configuration of the light irradiation device 400 of the present embodiment, and FIG. 14(a) is a view when the light irradiation device 400 is viewed from the Y-axis direction, and FIG. 14(b) This is a view when the light irradiation device 400 is viewed from the Z-axis direction (that is, when viewed from the lower side of FIG. 14(a)).

如圖14(a)及14(b)所示,光照射裝置400具備有:平行於X軸方向以及Y軸方向的矩形電路基板401;25個LED 402;配置在各LED 402的光軸上的第一透鏡403、第二透鏡404、第三透鏡405;以及導光鏡410。 As shown in FIGS. 14(a) and 14(b), the light irradiation device 400 includes a rectangular circuit board 401 which is parallel to the X-axis direction and the Y-axis direction, 25 LEDs 402, and is disposed on the optical axis of each LED 402. a first lens 403, a second lens 404, a third lens 405; and a light guide 410.

LED 402以5個(X軸方向)×5個(Y軸方向)的二維四方晶格狀配置在電路基板401上,與電路基板401電氣連接。電路基板401與未圖示的LED驅動電路連接,來自LED驅動電路的驅動電流通過電路基板401,供給至各LED 402。驅動電流供給至各LED 402時,LED 402會射出驅動電流相應光量的紫外光(例如,波長365nm)。 The LED 402 is disposed on the circuit board 401 in a two-dimensional square lattice of five (X-axis directions) × five (Y-axis directions), and is electrically connected to the circuit board 401. The circuit board 401 is connected to an LED drive circuit (not shown), and a drive current from the LED drive circuit is supplied to each of the LEDs 402 through the circuit board 401. When a driving current is supplied to each of the LEDs 402, the LED 402 emits ultraviolet light (for example, a wavelength of 365 nm) that drives a corresponding amount of current.

第一透鏡403、第二透鏡404以及第三透鏡405,固定在未圖示的鏡架上,並配置在各LED 402的光軸上。第一透鏡403是通過矽樹脂注塑成型而形成、且LED 402側為平面的平凸透鏡,具有縮小LED 402所射入紫外光的擴散角的功能。第二透鏡404以及第三透鏡405是通過矽樹脂注塑成型而形成、且入射面以及出射面均為凸面的雙凸透鏡,並將第一透鏡403射入的紫外光整形或形成為大致平行光。因此,從各第三透鏡405射出具有指定光束直徑的大致平行的紫外光。 The first lens 403, the second lens 404, and the third lens 405 are fixed to a frame (not shown) and disposed on the optical axis of each of the LEDs 402. The first lens 403 is a plano-convex lens formed by injection molding of a resin and having a flat LED 402 side, and has a function of reducing the diffusion angle of the ultraviolet light incident on the LED 402. The second lens 404 and the third lens 405 are lenticular lenses formed by injection molding of a resin and having a convex surface on both the incident surface and the exit surface, and the ultraviolet light incident on the first lens 403 is shaped or formed into substantially parallel light. Therefore, substantially parallel ultraviolet light having a specified beam diameter is emitted from each of the third lenses 405.

導光鏡410是一種在內部形成有反射面、且橫截面為矩形中空的部件,以從Z軸方向觀察時,包圍著25個LED404的方式而設置。因此,穿過各第三透鏡405的紫外光,穿過導光鏡410而射出,並穿過狹縫透光罩20的縫隙(未圖示),將照射圖 形PA投射到基板W的邊緣部周邊(圖13)。 The light guide mirror 410 is a member in which a reflecting surface is formed inside and has a rectangular hollow cross section, and is provided so as to surround the 25 LEDs 404 when viewed in the Z-axis direction. Therefore, the ultraviolet light that has passed through each of the third lenses 405 is emitted through the light guide 410 and passes through a slit (not shown) of the slit transparent cover 20 to illuminate the image. The shape PA is projected to the periphery of the edge portion of the substrate W (Fig. 13).

並且,雖然根據本實施方式的結構所投射的照射圖形PA,也是為了使基板W內側的照射強度為最高,在相當於基板W的電路圖形形成區域CA端部的位置變為急劇上升的(即,不太平緩)照射強度分佈,以配置在基板W內側的LED 402的出射光量為最高的方式而構成,但是,本實施方式中,隨著基板W的移動,各LED 402與基板W的相對位置關係不同,因此根據基板W的移動方向以及照射位置變更了供向各LED 402的驅動電流。具體而言,在使基板W的X軸方向負側的一邊周邊曝光的時候,以使位於X軸方向正側的LED 402的出射光量變越高的方式流過驅動電流;在使基板W的X軸方向正側的一邊周邊曝光的時候,以使位於X軸方向負側的LED 402的出射光量變越高的方式流過驅動電流;在使基板W的Y軸方向負側的一邊周邊曝光的時候,以使位於Y軸方向正側的LED 402中以出射光量變越高的方式流過驅動電流;在使基板W的Y軸方向正側的一邊周邊曝光的時候,以使位於Y軸方向負側的LED 402中以出射光量變越高的方式流過驅動電流。如上所述,根據本實施方式的結構,與第一至第三實施方式相同,可準確保留電路圖形形成CA的抗蝕劑,同時還可以準確地去除基板W邊緣部抗蝕劑。 Further, the irradiation pattern PA projected by the configuration of the present embodiment is such that the irradiation intensity inside the substrate W is the highest, and the position at the end of the circuit pattern forming region CA corresponding to the substrate W is sharply increased (that is, The irradiation intensity distribution is configured such that the amount of light emitted from the LEDs 402 disposed inside the substrate W is the highest. However, in the present embodiment, the LEDs 402 are opposed to the substrate W as the substrate W moves. Since the positional relationship is different, the drive current supplied to each of the LEDs 402 is changed in accordance with the moving direction of the substrate W and the irradiation position. Specifically, when the periphery of one side of the negative side of the X-axis direction of the substrate W is exposed, the drive current flows so that the amount of light emitted from the LED 402 on the positive side in the X-axis direction increases, and the substrate W is made. When one side of the positive side of the X-axis direction is exposed, the drive current flows so that the amount of light emitted from the LED 402 on the negative side in the X-axis direction increases, and the side of the negative side of the Y-axis direction of the substrate W is exposed. In the case of the LED 402 located on the positive side in the Y-axis direction, the drive current flows so that the amount of emitted light increases, and when the substrate W is exposed to the side on the positive side in the Y-axis direction, the Y-axis is placed. In the LED 402 on the negative side, the drive current flows so that the amount of emitted light becomes higher. As described above, according to the configuration of the present embodiment, as in the first to third embodiments, the resist of the circuit pattern forming CA can be accurately retained, and the resist of the edge portion of the substrate W can be accurately removed.

另外,本次公開的實施方式,在各方面做出了例示,但應理解,本發明不僅僅限於所述的施方式。本發明的範圍並非局限於上述說明,其旨在包含根據申請專利範圍所示、與申請專 利範圍均等的意圖,以及其範圍內所包括的所有變形。 In addition, the embodiments disclosed herein are exemplified in various aspects, but it should be understood that the invention is not limited to the embodiments described. The scope of the present invention is not limited to the above description, and it is intended to include the application and the application according to the scope of the patent application. The intent of equal scope and all modifications included in its scope.

綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

1‧‧‧周邊曝光裝置 1‧‧‧ peripheral exposure device

100‧‧‧光照射裝置 100‧‧‧Lighting device

110‧‧‧光源單元 110‧‧‧Light source unit

112‧‧‧放電燈 112‧‧‧Discharge lamp

114‧‧‧橢圓反射鏡 114‧‧‧Oval mirror

116‧‧‧殼體 116‧‧‧Shell

116a‧‧‧前面板 116a‧‧‧ front panel

118‧‧‧固定件 118‧‧‧Fixed parts

120‧‧‧光導 120‧‧‧Light Guide

120a‧‧‧入射端面 120a‧‧‧incident end face

120b‧‧‧出射端面 120b‧‧‧ exit end face

122‧‧‧第一連接器 122‧‧‧First connector

124‧‧‧第二連接器 124‧‧‧Second connector

130‧‧‧照射頭 130‧‧‧Emission head

132‧‧‧第二玻璃棒 132‧‧‧Second glass rod

133、134‧‧‧透鏡 133, 134‧ ‧ lens

135‧‧‧反射鏡 135‧‧‧Mirror

C‧‧‧中心 C‧‧‧ Center

L‧‧‧光 L‧‧‧Light

W‧‧‧基板 W‧‧‧Substrate

Claims (20)

一種用於周邊曝光裝置的光照射裝置,具備射出光的光源,且向待照射物的邊緣部周邊照射所述光並對所述邊緣部進行曝光的用於周邊曝光裝置的光照射裝置,該光照射裝置包括:所述光源具備有放射所述光的放電燈,以及由對所述放電燈的光進行導光的多數的光纖線構成的光導;所述光導具有光入射面以及光出射面,所述光入射面上所述多數的光纖線收攏成圓形,且來自所述放電燈的光射入所述光入射面,所述光出射面上所述多數的光纖線收攏成矩形,且將從所述放電燈射入的光射出;所述光出射面由第一區域以及第二區域構成,所述第一區域配置有在所述光入射面上位於中心部的所述多數的光纖線的一部分,所述第二區域配置有在所述光入射面上位於周邊部的所述多數的光纖線的一部分;在所述待照射物的邊緣部周邊,所述第一區域射出的光比所述第二區域射出的光更靠近所述待照射物的內側構成為所述光源形成指定的光強分佈,待照射物的邊緣部周邊的光強,隨待照射物由內側向外側變低。 A light irradiation device for a peripheral exposure device, comprising: a light source that emits light, and a light irradiation device for a peripheral exposure device that illuminates the periphery of an edge portion of the object to be irradiated and exposes the edge portion, The light irradiation device includes: the light source includes a discharge lamp that emits the light, and a light guide that is formed of a plurality of optical fiber lines that guide light of the discharge lamp; the light guide has a light incident surface and a light exit surface The plurality of optical fiber lines on the light incident surface are gathered into a circular shape, and light from the discharge lamp is incident on the light incident surface, and the plurality of optical fiber lines on the light exit surface are gathered into a rectangular shape. And emitting light emitted from the discharge lamp; the light exit surface is composed of a first region and a second region, and the first region is disposed with the majority of the plurality of the central portion on the light incident surface a portion of the optical fiber line, wherein the second region is disposed with a portion of the plurality of optical fiber lines located at a peripheral portion on the light incident surface; and the first region is emitted around the edge portion of the object to be irradiated Light The light emitted from the second region is closer to the inner side of the object to be irradiated, so that the light source forms a specified light intensity distribution, and the light intensity around the edge portion of the object to be irradiated becomes lower from the inner side to the outer side as the object to be irradiated . 根據申請專利範圍第1項所述的用於周邊曝光裝置的光照射裝置,其中:所述多數的光纖線隨機排列配置。 A light irradiation device for a peripheral exposure device according to claim 1, wherein the plurality of optical fiber wires are arranged in a random arrangement. 根據申請專利範圍第1或2項所述的用於周邊曝光裝置的光照射裝置,其中所述第一區域射出的光,照射所述待照射物上。 A light illuminating device for a peripheral exposure device according to claim 1 or 2, wherein the light emitted from the first region illuminates the object to be irradiated. 根據申請專利範圍第1或2項所述的用於周邊曝光裝置的光照射裝置,其中所述第二區域射出的光的至少一部分,照射所述待照射物的外側。 The light-irradiating device for a peripheral exposure device according to claim 1 or 2, wherein at least a portion of the light emitted from the second region illuminates an outer side of the object to be irradiated. 根據申請專利範圍第3項所述的用於周邊曝光裝置的光照射裝置,其中所述第二區域射出的光的至少一部分,照射所述待照射物的外側。 The light-irradiating device for a peripheral exposure device according to claim 3, wherein at least a portion of the light emitted from the second region illuminates an outer side of the object to be irradiated. 根據申請專利範圍第1或2項所述的用於周邊曝光裝置的光照射裝置,其中所述第一區域與所述第二區域的大小相等。 The light-irradiating device for a peripheral exposure device according to claim 1 or 2, wherein the first region and the second region are equal in size. 根據申請專利範圍第3項所述的用於周邊曝光裝置的光照射裝置,其中所述第一區域與所述第二區域的大小相等。 A light irradiation device for a peripheral exposure device according to claim 3, wherein the first region and the second region are equal in size. 根據申請專利範圍第4項所述的用於周邊曝光裝置的光照射裝置,其中所述第一區域與所述第二區域的大小相等。 A light irradiation device for a peripheral exposure device according to claim 4, wherein the first region and the second region are equal in size. 根據申請專利範圍第5項所述的用於周邊曝光裝置的光照射裝置,其中所述第一區域與所述第二區域的大小相等。 A light irradiation device for a peripheral exposure device according to claim 5, wherein the first region and the second region are equal in size. 根據申請專利範圍第1或2項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to claim 1 or 2, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light The light emitted from the exit surface is emitted and has a rectangular cross section. 根據申請專利範圍第3項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to claim 3, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light exit surface The emitted light is emitted and has a rectangular cross section. 根據申請專利範圍第4項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to the fourth aspect of the invention, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light exit surface The emitted light is emitted and has a rectangular cross section. 根據申請專利範圍第5項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫 截面為矩形。 A light irradiation device for a peripheral exposure device according to claim 5, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light exit surface The emitted light is emitted and horizontally The section is rectangular. 根據申請專利範圍第6項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to claim 6, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light exit surface The emitted light is emitted and has a rectangular cross section. 根據申請專利範圍第7項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to claim 7, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light exit surface The emitted light is emitted and has a rectangular cross section. 根據申請專利範圍第8項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to claim 8, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer, the light mixer mixing the light exit surface The emitted light is emitted and has a rectangular cross section. 根據申請專利範圍第9項所述的用於周邊曝光裝置的光照射裝置,其中所述用於周邊曝光裝置的光照射裝置還具備有光混合器,所述光混合器混合所述光出射面射出的光並射出,且橫截面為矩形。 The light irradiation device for a peripheral exposure device according to claim 9, wherein the light irradiation device for the peripheral exposure device is further provided with a light mixer that mixes the light exit surface The emitted light is emitted and has a rectangular cross section. 根據申請專利範圍第10項所述的用於周邊曝光裝置的光照射裝置,其中:所述光混合器是將所述第一區域所射出的光和所述第二區域所射出的光混合而用的玻璃棒。 The light irradiation device for a peripheral exposure device according to claim 10, wherein the light mixer mixes light emitted from the first region and light emitted from the second region Used glass rods. 根據申請專利範圍第10項所述的用於周邊曝光裝置的光照射裝置,其中:所述光混合器具有混合所述第一區域射出的光而用的第一玻璃棒、以及混合所述第二區域射出的光而用的第二玻璃棒。 The light irradiation device for a peripheral exposure device according to claim 10, wherein: the optical mixer has a first glass rod for mixing light emitted from the first region, and mixing the first A second glass rod for the light emitted by the two regions. 根據申請專利範圍第1或2項所述的用於周邊曝光裝置的光照射裝置,其中:所述光至少包含作用于塗在所述待照射物上的抗蝕層的光的波長。 A light-irradiating device for a peripheral exposure device according to claim 1 or 2, wherein the light contains at least a wavelength of light acting on a resist layer coated on the object to be irradiated.
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