TWI596009B - Housing and method for making the housing - Google Patents

Housing and method for making the housing Download PDF

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Publication number
TWI596009B
TWI596009B TW102144563A TW102144563A TWI596009B TW I596009 B TWI596009 B TW I596009B TW 102144563 A TW102144563 A TW 102144563A TW 102144563 A TW102144563 A TW 102144563A TW I596009 B TWI596009 B TW I596009B
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Taiwan
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layer
substrate
target
chromium
transparent
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TW102144563A
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Chinese (zh)
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TW201520053A (en
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張春杰
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富智康(香港)有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00Casings, cabinets or drawers for electric apparatus
    • H05K5/04Metal casings

Description

外殼及其製造方法 Housing and method of manufacturing same

本發明涉及一種外殼及其製造方法,尤其涉及一種表面形成有透明膜之外殼及其製造方法。 The present invention relates to an outer casing and a method of manufacturing the same, and more particularly to an outer casing having a transparent film formed on its surface and a method of manufacturing the same.

隨著科技之迅速演進,移動電話、個人電腦等3C產品及汽車電子產品之發展迅速,市場上所出現之高光、高亮度、多樣化之外殼及表面具有金屬外觀之產品普遍得到消費者之青睞。為了使電子產品呈現良好之亮度及光潔度,通常使用噴塗等傳統之製作工藝於電子產品表面形成透明膜。然,該等傳統之製作工藝複雜,且製作之透明膜光潔度較低,耐磨損性能較差,使用壽命較短。 With the rapid evolution of technology, 3C products and automotive electronics products such as mobile phones and personal computers have developed rapidly. The high-gloss, high-brightness, diversified outer casings and metallic appearance products on the market are generally favored by consumers. . In order to make the electronic product exhibit good brightness and smoothness, a transparent film is usually formed on the surface of the electronic product by a conventional manufacturing process such as spraying. However, these conventional manufacturing processes are complicated, and the manufactured transparent film has a low finish, poor wear resistance, and a short service life.

有鑒於此,有必要提供一種外殼,其表面形成有高光、高亮度之透明膜。 In view of the above, it is necessary to provide a case in which a transparent film of high light and high brightness is formed on the surface.

另外,還有必要提供一種上述外殼之製造方法。 In addition, it is also necessary to provide a method of manufacturing the above casing.

一種外殼,其包括基材及形成於基材表面之透明膜,該透明膜包括打底層、形成於打底層表面之過渡層及形成於過渡層表面之透明層,該打底層為鉻層,該過渡層為碳化鉻層,該透明層為矽層,該打底層形成於所述基材之表面,該過渡層形成於該打底層之表面,該透明層形成於該過渡層之表面。 An outer casing comprising a substrate and a transparent film formed on the surface of the substrate, the transparent film comprising a primer layer, a transition layer formed on the surface of the primer layer, and a transparent layer formed on the surface of the transition layer, the primer layer being a chromium layer, The transition layer is a chromium carbide layer, and the transparent layer is a layer of tantalum formed on the surface of the substrate. The transition layer is formed on the surface of the underlayer, and the transparent layer is formed on the surface of the transition layer.

一種外殼之製造方法,其包括如下步驟:提供基材;以鉻靶為靶材,採用磁控濺射法於基材表面濺鍍打底層,該打底層為鉻層;以鉻靶為靶材,通入反應氣體乙炔,採用磁控濺射法於打底層之表面濺鍍過渡層,該過渡層為碳化鉻層;以矽靶為靶材,採用磁控濺射法於過渡層之表面濺鍍透明層,該透明層為矽層。 A method for manufacturing a casing, comprising the steps of: providing a substrate; using a chromium target as a target, sputtering a substrate on the surface of the substrate by magnetron sputtering, the underlayer is a chromium layer; and the chromium target is used as a target The reaction gas acetylene is introduced, and the transition layer is sputtered on the surface of the underlayer by magnetron sputtering. The transition layer is a chromium carbide layer; the target is used as a target, and the surface of the transition layer is sputtered by magnetron sputtering. A transparent layer is plated, and the transparent layer is a layer of germanium.

本發明採用特殊之靶材組合,配合新的PVD鍍膜工藝,製備出具有透明膜之外殼,所述透明膜具有高光亮度,使外殼之表面具有較高之亮度及光潔度。另,使用磁控濺射法於基體之表面依次濺鍍打底層、過渡層及透明層,膜層之間逐層過渡較好,膜層內部沒有明顯之應力產生,當承受外力時,透明膜不易被破壞,可呈現良好之硬度及耐磨性,延長了外殼之使用壽命。 The invention adopts a special target material combination and a new PVD coating process to prepare an outer shell having a transparent film, the transparent film having high brightness, so that the surface of the outer casing has high brightness and smoothness. In addition, the bottom layer, the transition layer and the transparent layer are sequentially sputtered on the surface of the substrate by magnetron sputtering, and the layer-to-layer transition between the layers is better, and no obvious stress is generated inside the film layer. When subjected to external force, the transparent film It is not easily damaged, and it can exhibit good hardness and wear resistance, which prolongs the service life of the outer casing.

100‧‧‧外殼 100‧‧‧ Shell

20‧‧‧基材 20‧‧‧Substrate

10‧‧‧透明膜 10‧‧‧Transparent film

13‧‧‧打底層 13‧‧‧ playing the bottom layer

15‧‧‧過渡層 15‧‧‧Transition layer

17‧‧‧透明層 17‧‧‧ transparent layer

200‧‧‧真空鍍膜機 200‧‧‧Vacuum Coating Machine

21‧‧‧鍍膜室 21‧‧‧ coating room

23‧‧‧鉻靶 23‧‧‧Chromium target

24‧‧‧矽靶 24‧‧‧ target

25‧‧‧軌跡 25‧‧‧Track

300‧‧‧真空泵 300‧‧‧vacuum pump

圖1為本發明一較佳實施例之外殼之剖視圖。 1 is a cross-sectional view of a housing in accordance with a preferred embodiment of the present invention.

圖2為本發明一較佳實施例真空鍍膜機之俯視示意圖。 2 is a top plan view of a vacuum coating machine in accordance with a preferred embodiment of the present invention.

請參閱圖1,本發明提供一種較佳實施方式之外殼100,其可用於3C電子產品或汽車電子產品。該外殼100包括基材20及透明膜10,該透明膜10無色透明。該透明膜10包括形成於基材20表面之打底層13、形成於打底層13表面之過渡層15及形成於過渡層15表面之透明層17。 Referring to Figure 1, the present invention provides a preferred embodiment of a housing 100 that can be used in 3C electronics or automotive electronics. The outer casing 100 includes a substrate 20 and a transparent film 10, which is colorless and transparent. The transparent film 10 includes a primer layer 13 formed on the surface of the substrate 20, a transition layer 15 formed on the surface of the primer layer 13, and a transparent layer 17 formed on the surface of the transition layer 15.

該基材20之材質為可為金屬、塑膠或陶瓷。 The material of the substrate 20 can be metal, plastic or ceramic.

該打底層13為金屬鉻層,其厚度為0.1-0.3μm,該打底層13起到提高膜層結合力之作用。 The underlayer 13 is a metal chromium layer having a thickness of 0.1-0.3 μm, and the underlayer 13 functions to increase the adhesion of the film layer.

該過渡層15為碳化鉻層,其厚度為0.2-0.4μm,該過渡層15可增強透明層17之附著力。 The transition layer 15 is a chromium carbide layer having a thickness of 0.2 to 0.4 μm, and the transition layer 15 can enhance the adhesion of the transparent layer 17.

該透明層17為矽層,其厚度為0.1-0.3μm。該透明層17中僅含有矽原子,因此其透明性較好。 The transparent layer 17 is a ruthenium layer having a thickness of 0.1 to 0.3 μm. Since the transparent layer 17 contains only germanium atoms, its transparency is good.

本發明使用磁控濺射法,首先於基材20之表面濺鍍金屬鉻作為打底層13,再於打底層13之表面濺鍍過渡層15,最後於過渡層15上濺鍍透明層17,膜層之間逐層過渡較好,且膜層之間結合較好,膜層內部沒有明顯之應力產生,因此,當承受外力時,透明膜10不易被破壞,可呈現良好之硬度及耐磨性。 In the present invention, the magnetron sputtering method is used, firstly, metal chromium is sputtered on the surface of the substrate 20 as the underlayer 13, and then the transition layer 15 is sputtered on the surface of the underlayer 13, and finally the transparent layer 17 is sputtered on the transition layer 15. The layer-to-layer transition between the layers is better, and the bonding between the layers is better, and no obvious stress is generated inside the film. Therefore, when subjected to external force, the transparent film 10 is not easily broken, and can exhibit good hardness and wear resistance. Sex.

所述打底層13為金屬鉻層,具有透明性;所述過渡層15為CrC層,且厚度較小,不影響透明膜10之透明度;所述透明層17僅含有矽原子,具有較高之透明性,且該透明層17表面平整,因此所述透明膜10具有較高之透明度,從而使外殼100之表面呈現較高之亮度及光潔度。 The underlayer 13 is a metal chromium layer having transparency; the transition layer 15 is a CrC layer, and the thickness is small, and does not affect the transparency of the transparent film 10; the transparent layer 17 contains only germanium atoms, and has a higher The transparency and the surface of the transparent layer 17 are flat, so that the transparent film 10 has a high transparency, so that the surface of the outer casing 100 exhibits high brightness and smoothness.

本發明一較佳實施方式外殼100之製備方法,其包括如下步驟:請參閱圖2,提供一真空鍍膜機200,其包括一鍍膜室21及連接於鍍膜室21之一真空泵30,真空泵30用以對鍍膜室21抽真空。該鍍膜室21內設有轉架(未圖示)、鉻靶23及矽靶24。轉架帶動基材20沿圓形之軌跡25公轉,且基材20於沿軌跡25公轉時亦自轉。 A method for preparing a housing 100 according to a preferred embodiment of the present invention includes the following steps: Referring to FIG. 2, a vacuum coating machine 200 is provided, which includes a coating chamber 21 and a vacuum pump 30 connected to the coating chamber 21 for vacuum pump 30. The vacuum is applied to the coating chamber 21. A rotating frame (not shown), a chrome target 23, and a target 24 are provided in the coating chamber 21. The turret drives the substrate 20 to revolve along a circular trajectory 25, and the substrate 20 also rotates as it revolves along the trajectory 25.

提供基材20,該基材20之材質可為金屬、塑膠及陶瓷之任意一種。 The substrate 20 is provided, and the material of the substrate 20 can be any one of metal, plastic and ceramic.

對該基材20進行表面預處理,該表面預處理可包括常規之對基材20進行清洗及拋光等步驟,將預處理後之基材20烘乾後固定於鍍膜室21內之轉架上。 The substrate 20 is subjected to surface pretreatment. The surface pretreatment may include conventional steps of cleaning and polishing the substrate 20, and the pretreated substrate 20 is dried and then fixed on a rotating frame in the coating chamber 21. .

抽真空,開啟真空泵300,將鍍膜室21抽真空至5×10-2Pa。 The vacuum pump was turned on, the vacuum pump 300 was turned on, and the coating chamber 21 was evacuated to 5 × 10 -2 Pa.

洗靶,通入工作氣體氬氣,氬氣流量為100標況毫升每分鐘(sccm),於恒定功率5KW下,洗靶15分鐘。 The target was washed, and a working gas of argon was introduced. The flow rate of the argon gas was 100 standard milliliters per minute (sccm), and the target was washed for 15 minutes at a constant power of 5 KW.

對鍍膜室21抽高真空並加熱,鍍膜室21之溫度設定為200℃,用真空泵300抽高真空至5×10-3Pa。 The coating chamber 21 was evacuated and heated, and the temperature of the coating chamber 21 was set to 200 ° C, and the vacuum pump 300 was used to draw a high vacuum to 5 × 10 -3 Pa.

高電壓氬離子輝光清洗,鍍膜室21溫度為120℃,負偏壓設定1300V,通入工作氣體氬氣,對基材20表面進行清洗。 High-voltage argon ion glow cleaning, the temperature of the coating chamber 21 is 120 ° C, the negative bias voltage is set to 1300 V, and the working gas argon gas is introduced to clean the surface of the substrate 20.

以鉻靶23為靶材,採用磁控濺射法於清洗後之基材20表面濺鍍打底層13。鉻靶23使用射頻電源,濺鍍時,開啟鉻靶23並設置其功率為8-15KW,通入工作氣體氬氣,氬氣流量為100-150sccm,鍍膜室21之室內溫度為120-180℃,施加於基材20之負偏壓為100-250V,鍍膜時間為5-10min。 The chrome target 23 is used as a target, and the underlayer 13 is sputtered on the surface of the substrate 20 after cleaning by magnetron sputtering. The chrome target 23 uses a radio frequency power source. When sputtering, the chrome target 23 is turned on and the power is set to 8-15 KW, the working gas argon gas is introduced, the argon gas flow rate is 100-150 sccm, and the indoor temperature of the coating chamber 21 is 120-180 ° C. The negative bias applied to the substrate 20 is 100-250 V, and the coating time is 5-10 min.

以鉻靶23為靶材,繼續採用磁控濺射法於打底層13之表面濺鍍過渡層15。鉻靶23使用射頻電源,濺鍍時,開啟鉻靶23並設置其功率為6-12KW,向鍍膜室21內通入工作氣體氬氣及反應氣體乙炔,氬氣流量為80-140sccm,乙炔流量為50-75sccm,鍍膜室21之室內溫度為100-150℃,施加於基材20之負偏壓為200-300V,鍍膜時間為40-50min。由於乙炔通入量較少,不會影響透明膜10之透 明度;以矽靶24為靶材,繼續採用磁控濺射法於過渡層15之表面濺鍍透明層17。矽靶24使用射頻電源,濺鍍時開啟矽靶24,並設置其功率為4-8KW,通入工作氣體氬氣,氬氣流量為50-135sccm,鍍膜室21之室內溫度為90-120℃,施加於基材20之負偏壓為200-400V,鍍膜時間為20-40min。 With the chromium target 23 as a target, the transition layer 15 is sputtered on the surface of the underlayer 13 by magnetron sputtering. The chrome target 23 uses an RF power source. When sputtering, the chrome target 23 is turned on and the power is set to 6-12 KW. The working gas argon gas and the reaction gas acetylene are introduced into the coating chamber 21, and the argon gas flow rate is 80-140 sccm, and the acetylene flow rate is performed. The temperature in the chamber 21 is 100-150 ° C, the negative bias applied to the substrate 20 is 200-300 V, and the coating time is 40-50 min. Since the amount of acetylene is small, it will not affect the transparency of the transparent film 10. Brightness; with the target 24 as the target, the transparent layer 17 is sputtered on the surface of the transition layer 15 by magnetron sputtering. The target 24 uses an RF power source. When the sputtering is performed, the target 24 is turned on, and the power is set to 4-8 KW. The working gas is argon gas, the flow rate of the argon gas is 50-135 sccm, and the indoor temperature of the coating chamber 21 is 90-120 ° C. The negative bias applied to the substrate 20 is 200-400 V, and the coating time is 20-40 min.

下面藉由實施例來對本發明進行具體說明。 The invention will now be specifically described by way of examples.

實施例1 Example 1

本實施例所採用之基材20之材質為不銹鋼316。 The material of the substrate 20 used in this embodiment is stainless steel 316.

濺鍍打底層13:鉻靶23之功率為8kw,氬氣流量為100sccm,鍍膜時鍍膜室21內之溫度為170℃,施加於基材20之負偏壓為100v,鍍膜時間為5min。 Sputtering primer layer 13: The power of the chromium target 23 was 8 kw, the flow rate of argon gas was 100 sccm, the temperature in the coating chamber 21 at the time of coating was 170 ° C, the negative bias applied to the substrate 20 was 100 v, and the coating time was 5 min.

濺鍍過渡層15:鉻靶23之功率為6kw,氬氣流量為110sccm,乙炔之流量為55sccm,鍍膜時鍍膜室21內之溫度為160℃,施加於基材20之負偏壓為200v,鍍膜時間為40min。 Sputtering transition layer 15: the power of the chromium target 23 is 6 kw, the flow rate of argon gas is 110 sccm, the flow rate of acetylene is 55 sccm, the temperature in the coating chamber 21 during coating is 160 ° C, and the negative bias applied to the substrate 20 is 200 v. The coating time is 40 min.

濺鍍透明層17:矽靶24之功率為6kw,氬氣流量為125sccm,鍍膜時鍍膜室21內之溫度為130℃,施加於基材20之負偏壓為300v,鍍膜時間為20min。 The transparent layer 17 was sputtered: the power of the target 24 was 6 kw, the flow rate of argon gas was 125 sccm, the temperature in the coating chamber 21 at the time of coating was 130 ° C, the negative bias applied to the substrate 20 was 300 v, and the coating time was 20 min.

實施例2 Example 2

本實施例所採用之基材20之材質為SUS304。 The material of the substrate 20 used in this embodiment is SUS304.

濺鍍打底層13:鉻靶23之功率為10kw,氬氣流量為110sccm,鍍膜時鍍膜室21內之溫度為175℃,施加於基材20之負偏壓為150v ,鍍膜時間為8min。 Sputtering primer layer 13: the power of the chromium target 23 is 10 kW, the flow rate of argon gas is 110 sccm, the temperature in the coating chamber 21 during coating is 175 ° C, and the negative bias applied to the substrate 20 is 150 volts. The coating time is 8 min.

濺鍍過渡層15:鉻靶23之功率為7kw,氬氣流量為120sccm,乙炔之流量為60sccm,鍍膜時鍍膜室21內之溫度為165℃,施加於基材20之負偏壓為250v,鍍膜時間為45min。 Sputtering transition layer 15: the power of the chromium target 23 is 7 kW, the flow rate of argon gas is 120 sccm, the flow rate of acetylene is 60 sccm, the temperature in the coating chamber 21 at the time of coating is 165 ° C, and the negative bias voltage applied to the substrate 20 is 250 volts. The coating time was 45 min.

濺鍍透明層17:矽靶24之功率為5.5kw,氬氣流量為120sccm,鍍膜時鍍膜室21內之溫度為125℃,施加於基材20之負偏壓為350v,鍍膜時間為25min。 The transparent layer 17 was sputtered: the power of the target 24 was 5.5 kW, the flow rate of argon gas was 120 sccm, the temperature in the coating chamber 21 at the time of coating was 125 ° C, the negative bias applied to the substrate 20 was 350 V, and the coating time was 25 min.

實施例3 Example 3

本實施例所使用之基材20之材質為不銹鋼314。 The material of the substrate 20 used in this embodiment is stainless steel 314.

濺鍍打底層13:鉻靶23之功率為12kw,氬氣流量為135sccm,鍍膜時鍍膜室21內之溫度為180℃,施加於基材20之負偏壓為220v,鍍膜時間為12min。 Sputtering primer layer 13: The power of the chromium target 23 was 12 kW, the flow rate of argon gas was 135 sccm, the temperature in the coating chamber 21 at the time of coating was 180 ° C, the negative bias voltage applied to the substrate 20 was 220 V, and the coating time was 12 min.

濺鍍過渡層15:鉻靶23之功率為9kw,氬氣流量為135sccm,乙炔之流量為65sccm,鍍膜時鍍膜室21內之溫度為170℃,施加於基材20之負偏壓為300v,鍍膜時間為50min。 Sputtering transition layer 15: the power of the chromium target 23 is 9 kw, the flow rate of argon gas is 135 sccm, the flow rate of acetylene is 65 sccm, the temperature in the coating chamber 21 at the time of coating is 170 ° C, and the negative bias voltage applied to the substrate 20 is 300 v. The coating time is 50 min.

濺鍍透明層17:矽靶24之功率為7kw,氬氣流量為135sccm,鍍膜時鍍膜室21內之溫度為115℃,施加於基材20之負偏壓為400v,鍍膜時間為35min。 The transparent layer 17 was sputtered: the power of the target 24 was 7 kw, the flow rate of argon gas was 135 sccm, the temperature in the coating chamber 21 at the time of coating was 115 ° C, the negative bias applied to the substrate 20 was 400 v, and the coating time was 35 min.

本發明之外殼100使用鉻靶23及矽靶24為靶材,使用磁控濺射法,首先於基材20之表面濺鍍金屬鉻作為打底層13,再於打底層13之表面濺鍍過渡層15,最後於過渡層15上濺鍍透明層17,膜層之間逐層過渡較好,所述透明膜表面平整,膜層內部沒有明顯之應 力產生,如是於施加外力時,透明膜10不易被破壞,可呈現良好之硬度及耐磨性,延長了使用壽命。所述打底層13為鉻層,具有透明性;所述過渡層15為CrC層,且厚度較小,不影響透明膜之透明度;所述透明層17僅含有矽原子,具有較高之透明性,且所述透明層17之表面平整,因此所述透明膜10具有較高之透明度,從而使外殼100之表面呈現較高之亮度及光潔度。 The outer casing 100 of the present invention uses a chrome target 23 and a ruthenium target 24 as a target, and uses a magnetron sputtering method to first sputter a metal chrome on the surface of the substrate 20 as a primer layer 13 and then a sputtering transition on the surface of the primer layer 13. Layer 15, finally, the transparent layer 17 is sputtered on the transition layer 15, and the layer-to-layer transition between the layers is better, the surface of the transparent film is flat, and there is no obvious inside the film layer. The force is generated, and when the external force is applied, the transparent film 10 is not easily broken, and the hardness and wear resistance can be exhibited, and the service life is prolonged. The underlayer 13 is a chromium layer having transparency; the transition layer 15 is a CrC layer and has a small thickness and does not affect the transparency of the transparent film; the transparent layer 17 contains only germanium atoms and has high transparency. And the surface of the transparent layer 17 is flat, so the transparent film 10 has a high transparency, so that the surface of the outer casing 100 exhibits high brightness and smoothness.

100‧‧‧外殼 100‧‧‧ Shell

20‧‧‧基材 20‧‧‧Substrate

10‧‧‧透明膜 10‧‧‧Transparent film

13‧‧‧打底層 13‧‧‧ playing the bottom layer

15‧‧‧過渡層 15‧‧‧Transition layer

17‧‧‧透明層 17‧‧‧ transparent layer

Claims (9)

一種外殼,其包括基材及形成於基材表面之透明膜,該透明膜包括打底層、過渡層及透明層,其改良在於:該打底層為鉻層,該過渡層為碳化鉻層,該透明層為僅含有矽原子的矽層,用以提高該外殼的透明性,該打底層形成於所述基材之表面,該過渡層形成於該打底層之表面,該透明層形成於該過渡層之表面。 An outer casing comprising a substrate and a transparent film formed on the surface of the substrate, the transparent film comprising a primer layer, a transition layer and a transparent layer, wherein the primer layer is a chromium layer, and the transition layer is a chromium carbide layer, The transparent layer is a germanium layer containing only germanium atoms for improving the transparency of the outer shell. The underlayer is formed on the surface of the substrate, and the transition layer is formed on the surface of the underlayer, and the transparent layer is formed in the transition. The surface of the layer. 如申請專利範圍第1項所述之外殼,其改良在於:該透明層之厚度為0.1-0.3μm。 The outer casing according to claim 1 is improved in that the transparent layer has a thickness of 0.1 to 0.3 μm. 如申請專利範圍第1項所述之外殼,其改良在於:所述打底層之厚度為0.1-0.3μm,所述過渡層之厚度為0.2-0.4μm。 The outer casing according to claim 1 is improved in that the underlayer has a thickness of 0.1 to 0.3 μm and the transition layer has a thickness of 0.2 to 0.4 μm. 如申請專利範圍第1項所述之外殼,其改良在於:所述基材之材質為金屬、塑膠或陶瓷。 The outer casing of claim 1 is improved in that the material of the substrate is metal, plastic or ceramic. 一種外殼之製造方法,其包括如下步驟:提供基材;以鉻靶為靶材,採用磁控濺射法於基材表面濺鍍打底層,該打底層為鉻層;以鉻靶為靶材,通入反應氣體乙炔,採用磁控濺射法於打底層之表面濺鍍過渡層,該過渡層為碳化鉻層;以矽靶為靶材,採用磁控濺射法於過渡層之表面濺鍍透明層,該透明層為僅含有矽原子的矽層,用以提高該外殼的透明性。 A method for manufacturing a casing, comprising the steps of: providing a substrate; using a chromium target as a target, sputtering a substrate on the surface of the substrate by magnetron sputtering, the underlayer is a chromium layer; and the chromium target is used as a target The reaction gas acetylene is introduced, and the transition layer is sputtered on the surface of the underlayer by magnetron sputtering. The transition layer is a chromium carbide layer; the target is used as a target, and the surface of the transition layer is sputtered by magnetron sputtering. The transparent layer is plated, and the transparent layer is a layer of germanium containing only germanium atoms to improve the transparency of the outer shell. 如申請專利範圍第5項所述之外殼之製造方法,其改良在於:所述基材之材質為金屬、塑膠或陶瓷。 The method for manufacturing a casing according to claim 5, wherein the substrate is made of metal, plastic or ceramic. 如申請專利範圍第5項所述之外殼之製造方法,其改良在於:所述打底層 之厚度為0.1-0.3μm,製備該打底層之工藝參數為:鉻靶使用射頻電源,鉻靶功率為8-15KW,通入氬氣,氬氣流量為100-150sccm,鍍膜室之室內溫度為120-180℃,施加於基材之負偏壓為100-250V,鍍膜時間為5-10min。 The manufacturing method of the outer casing according to claim 5, wherein the improvement is that the bottom layer is The thickness of the primer layer is 0.1-0.3 μm. The process parameters for preparing the primer layer are as follows: the chromium target uses a radio frequency power source, the chromium target power is 8-15 KW, the argon gas is introduced, the argon gas flow rate is 100-150 sccm, and the indoor temperature of the coating chamber is At 120-180 ° C, the negative bias applied to the substrate is 100-250 V, and the coating time is 5-10 min. 如申請專利範圍第5項所述之外殼之製造方法,其改良在於:所述過渡層之厚度為0.2-0.4μm,製備該過渡層之工藝參數為:鉻靶使用射頻電源,鉻靶功率為6-12KW,通入氬氣,氬氣流量為80-140sccm,乙炔流量為50-75sccm,鍍膜室之室內溫度為100-150℃,施加於基材之負偏壓為200-300V,鍍膜時間為40-50min。 The manufacturing method of the outer casing according to claim 5 is improved in that the thickness of the transition layer is 0.2-0.4 μm, and the process parameters for preparing the transition layer are: the chromium target uses an RF power source, and the chromium target power is 6-12KW, argon gas is introduced, the flow rate of argon gas is 80-140sccm, the flow rate of acetylene is 50-75sccm, the indoor temperature of the coating chamber is 100-150°C, and the negative bias voltage applied to the substrate is 200-300V, coating time It is 40-50min. 如申請專利範圍第5項所述之外殼之製造方法,其改良在於:所述透明層由矽原子組成,該透明層之厚度為0.1-0.3μm,製備該透明層之工藝參數為:矽靶使用射頻電源,矽靶功率為4-8KW,通入氬氣,氬氣流量為50-135sccm,鍍膜室之室內溫度為90-120℃,施加於基材之負偏壓為200-400V,鍍膜時間為20-40min。 The manufacturing method of the outer casing according to claim 5, wherein the transparent layer is composed of germanium atoms, the transparent layer has a thickness of 0.1-0.3 μm, and the process parameter for preparing the transparent layer is: a target Using RF power supply, the target power is 4-8KW, argon gas is introduced, the flow rate of argon gas is 50-135sccm, the indoor temperature of the coating chamber is 90-120°C, and the negative bias voltage applied to the substrate is 200-400V. The time is 20-40min.
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