TWI594049B - Border masking structures for liquid crystal display - Google Patents

Description

Edge mask structure for liquid crystal display

The present application claims priority to U.S. Patent Application Serial No. 14/164,026, filed on Jan. 24, 2014, and to the U.S. Patent Application Serial No. 61/909,276, filed on The manner of this is fully incorporated herein.

The present invention relates generally to electronic devices and, more particularly, to electronic devices having displays.

Electronic devices typically include a display. For example, cellular phones, computers, and televisions have displays.

A display such as a liquid crystal display has an active area filled with an array of display pixels. The active zone is surrounded by an inactive edge region. It may be desirable to minimize or eliminate the use of unsightly slotted frame structures in non-active edge regions. In displays with or without a bezel, there is a risk that the backlight can leak through the inactive edge region. If not noticed, the stray backlight will improperly illuminate the inactive area.

Accordingly, it would be desirable to be able to provide improved light blocking structures for inactive edge regions in displays such as liquid crystal displays.

The electronic device may be provided with a display such as a liquid crystal display. The liquid crystal display can have Upper polarizer and lower polarizer. A layer of liquid crystal material can be interposed between the thin film transistor layer and the color filter layer. The thin film transistor layer can be interposed between the liquid crystal layer and the upper polarizer. The color filter layer can be inserted between the liquid crystal layer and the lower polarizer.

The thin film transistor layer and the color filter layer can have an associated array of display pixels defining an active region of the display. The display pixels of the active area can be used to display an image to the user. One of the inactive edge regions of the display can extend along the perimeter of the active region. The light blocking structure in the inactive region prevents stray backlights from a backlight light guide from leaking out of the display.

The thin film transistor layer may have a clear substrate, a patterned black mask layer on the clear substrate, a clear planarization layer on the black mask layer, and a clearing layer on the clearing layer One of the thin film transistor circuit layers. The black mask layer can be formed from a black light imageable polyimide. The clear planarization layer can be formed from spin-on glass. The light blocking structure may comprise a first layer formed by a portion of the black mask layer in the inactive region, and may comprise a black strip on the underside of the color filter layer, such as adjacent to the lower polarizer One of the second layers of the layer.

10‧‧‧Electronic devices/devices

12‧‧‧ Shell

12A‧‧‧Upper casing

12B‧‧‧ lower casing

14‧‧‧ display

16‧‧‧ keyboard

18‧‧‧ Trackpad

20‧‧‧Hinged structure

22‧‧‧ Direction

24‧‧‧Rotary axis

26‧‧‧ button

28‧‧‧Speaker埠

30‧‧‧ bracket

42‧‧‧Backlight unit/backlight structure/backlight

44‧‧‧ Backlight

44'‧‧‧Descriptive stray backlighting

46‧‧‧Display layer

48‧‧‧Viewers

50‧‧‧ Direction

52‧‧‧Liquid layer/liquid crystal material

54‧‧‧Upper (outermost) polarizer layer

56‧‧‧Display layer/external substrate layer/thin film transistor layer

58‧‧‧Display layer/internal substrate layer/color filter layer

60‧‧‧ Lower (most internal) polarizer layer / polarizer

70‧‧‧Optical film/film

72‧‧‧Light source

74‧‧‧Light

76‧‧‧ edge surface of light guide

78‧‧‧Light guide

80‧‧‧ reflector

100‧‧‧Substrate/Thin Film Transistor Substrate

102‧‧‧Black mask layer/black mask/black mask material/polyimine black mask layer/polyimine layer/black mask layer structure

104‧‧‧ Opening/display pixel opening

106‧‧‧Developing layer / spin-on glass flattening layer / spin-on glass layer

107‧‧‧Inorganic buffer layer

108‧‧‧TFT layer/thin film transistor circuit layer

110‧‧‧Display pixel electrode

112‧‧‧Common electrode (Vcom) trace

114‧‧‧Dielectric layer

116‧‧‧clear outer coating

118‧‧‧ patterned metal

120‧‧‧gate insulator

122‧‧‧Semiconductor area

124‧‧‧film transistor

126‧‧‧ Passivation layer

130‧‧‧Substrate/Color Filter Substrate/Color Filter Layer Substrate

132‧‧‧Black light imageable polymer layer / opaque mask layer / black mask layer

134‧‧‧Color filter components

136‧‧‧Sealant

138‧‧‧Black belt/belt

140‧‧‧Adhesive layer

142‧‧‧ Carrier

AA‧‧‧ active area

D‧‧‧汲

G‧‧‧ gate

IA‧‧‧ Non-active regional/non-active marginal/inactive regional marginal zone

S‧‧‧ source

TFT‧‧‧thin film transistor

1 is a perspective view of an illustrative electronic device such as a laptop having a display, in accordance with an embodiment.

2 is a perspective view of an illustrative electronic device such as a handheld electronic device having a display, in accordance with an embodiment.

3 is a perspective view of an illustrative electronic device such as a tablet computer having a display, in accordance with an embodiment.

4 is a perspective view of an illustrative electronic device such as a display having a computer or television set with a display, in accordance with an embodiment.

Figure 5 is a cross-sectional side view of an illustrative display in accordance with an embodiment.

6 is a view showing an edge of a display in a display device without overlapping housings according to an embodiment. A cross-sectional side view of a portion of an illustrative electronic device in a structured manner.

7 is a cross-sectional side view of a structure and thin film circuit that can be formed on a thin film transistor layer in an illustrative display, in accordance with an embodiment.

8 is a cross-sectional side view of an illustrative display, in accordance with an embodiment.

9 is a flow diagram of illustrative steps involved in forming an electronic device having a display, in accordance with an embodiment.

Illustrative electronic devices of the type that can be provided with displays are shown in Figures 1, 2, 3 and 4.

The electronic device 10 of FIG. 1 has the shape of a laptop computer and has an upper housing 12A and a lower housing 12B having components such as a keyboard 16 and a trackpad 18. The device 10 has a hinge structure 20 (sometimes referred to as a coupling reel) to allow the upper outer casing 12A to rotate in a direction 22 about the axis of rotation 24 relative to the lower outer casing 12B. The display 14 is mounted in the housing 12A. The upper housing 12A is placed in the closed position by rotating the upper housing 12A (which may sometimes be referred to as a display housing or cover) about the axis of rotation 24 toward the lower housing 12B.

2 shows an illustrative configuration of an electronic device 10 based on a handheld device such as a cellular phone, music player, gaming device, navigation unit, or other small device. In this type of configuration of device 10, housing 12 has opposing front and rear surfaces. The display 14 is mounted on the front face of the outer casing 12. Display 14 can have an outer layer that includes openings for components such as button 26 and speaker cassette 28. If desired, the device 10 can be a small device such as a wrist worn device or a pendant device (as an example).

In the example of FIG. 3, the electronic device 10 is a tablet type computer. In the electronic device 10 of FIG. 3, the outer casing 12 has opposing flat front and rear surfaces. The display 14 is mounted on the front surface of the outer casing 12. As shown in FIG. 3, display 14 has an opening to accommodate button 26.

4 shows an illustrative configuration of an electronic device 10 in which the electronic device 10 is a computer display , a computer with an integrated computer monitor, or a television. The display 14 is mounted on the front face of the outer casing 12. In this type of configuration, the housing 12 of the device 10 can be mounted to a wall or can have an optional structure such as bracket 30 to support the device 10 on a flat surface such as a table or table.

Display 14 can be a liquid crystal display or a display formed using other suitable display technologies. A cross-sectional side view of an illustrative configuration of display 14 of device 10 (e.g., a liquid crystal display of the device of Figures 1, 2, 3, 4 or other suitable electronic device) is shown in FIG. As shown in FIG. 5, display 14 can include a backlight structure such as backlight unit 42 for producing backlight 44. During operation, backlight 44 travels outward (vertically upward in dimension Z in the orientation of FIG. 5) and passes through the display pixel structure in display layer 46. This illumination is being imaged by the display pixels for the user to view. For example, backlight 44 can illuminate an image on display layer 46 that is being viewed by viewer 48 in direction 50.

The display layer 46 can be mounted in a base structure such as a plastic base structure and/or a metal base structure to form a display module for mounting in the housing 12, or the display layer 46 can be mounted directly into the housing 12 (eg, by The display layer 46 is stacked in the recessed portion of the outer casing 12).

Display layer 46 can include a liquid crystal layer such as liquid crystal layer 52. The liquid crystal layer 52 can be sandwiched between display layers such as display layers 58 and 56. Layers 56 and 58 can be interposed between the lower (most inner) polarizer layer 60 and the upper (outermost) polarizer layer 54.

Layers 58 and 56 may be formed from a transparent substrate layer such as a clear glass or plastic layer. Layers 56 and 58 can be layers such as thin film transistor layers and/or color filter layers. Conductive traces, color filter elements, transistors, and other circuits and structures can be formed on the substrates of layers 58 and 56 (e.g., to form thin film transistor layers and/or color filter layers). Touch sensor electrodes can also be incorporated into layers such as layers 58 and 56 and/or touch sensor electrodes can be formed on other substrates.

In an illustrative configuration, the outer substrate layer 56 can be a thin film transistor layer that includes a thin film transistor for applying an electric field to the liquid crystal layer 52 and thus displaying an image on the display 14. Body array and associated electrodes (display pixel electrodes). The inner substrate layer 58 can be a color filter layer that includes an array of color filter elements for providing the ability to display color images to the display 14.

The backlight structure 42 can include a light guide plate such as a light guide plate 78. Light guide plate 78 can be formed from a transparent material such as clear glass or plastic. Light source, such as light source 72, can produce light 74 during operation of backlight structure 42. For example, light source 72 can be an array of light emitting diodes.

Light 74 from source 72 can be coupled into edge surface 76 of light guide plate 78 and can be distributed throughout the light guide plate 78 in dimensions X and Y due to the principle of total internal reflection. Light guide plate 78 can include light scattering features such as pits or bumps. The light scattering features can be on the upper surface of the light guiding plate 78 and/or on the opposite lower surface of the light guiding plate 78.

Light 74 that is scattered upward from light guide plate 78 in direction Z can serve as backlight 44 for display 14. The downwardly scattered light 74 can be reflected back by the reflector 80 in the upward direction. The reflector 80 can be formed from a reflective material such as a layer of white plastic or other shiny material.

To enhance the backlight performance of backlight structure 42, backlight structure 42 can include an optical film 70. The optical film 70 can include a diffuser layer for aiding in homogenizing the backlight 44 and thereby reducing hot spots, a compensation film for enhancing off-axis viewing, and a brightness enhancement film for collimating the backlight 44 (sometimes also referred to as Turn the film). The optical film 70 can overlap with other structures in the backlight unit 42, such as the light guide plate 78 and the reflector 80. For example, if light guide plate 78 has a rectangular footprint in the X-Y plane of FIG. 5, optical film 70 and reflector 80 can have a matching rectangular footprint.

Display 14 can have an array of display pixels (e.g., a rectangular array having multiple columns and rows) for displaying an image to a viewer. A vertical signal line, called a data line, can be used to carry the display data to individual lines of display pixels. A horizontal signal line called a gate line can be used to carry a gate line signal (sometimes referred to as a gate control signal or a gate signal) to a respective column of display pixels. The outline of the display pixel array in display 14 defines the active area of display 14. The active region may have a rectangular shape and may be surrounded by a non-active edge region. Non-functional The mid-edge region may extend, for example, along one edge, two edges, three edges, or all four edges of the active region.

A cross-sectional side view of an illustrative electronic device having a display such as display 14 of FIG. 5 is shown in FIG. As shown in FIG. 6, the image may be displayed on the central active area AA of the display 14. The inactive area IA may have a rectangular ring shape extending around the rectangular perimeter of the active area AA. In order to avoid the unsightly bezel structure in the device 10, it may be desirable to have the inactive area IA not overlap the outer shell structure, the bezel or other possibly unsightly edge structures.

In order to avoid light leakage in the inactive area IA (eg, to prevent stray light from escaping without a bezel or other overlapping structure), the display 14 may be provided with an edge mask structure in the inactive area IA. . The edge reticle structure can help block stray backlighting from the backlight unit 42 and thereby ensure that the edge IA does not allow excessive light to escape. Therefore, the backlight from the backlight unit 42 will be limited to the active area AA.

In order to provide satisfactory light blocking capability in the inactive area IA, the light blocking structure may be formed in two portions (eg, two layers). The first portion of the light blocking structure can be formed from a black mask layer on the underside of the thin film transistor layer 56. In the active area AA, the black mask layer can be patterned to form a black mask. The black reticle is a grid of a series of intersecting black lines that define a rectangular array of clear display pixel openings in the thin film transistor layer. Each of the openings in the black reticle is aligned with a respective color filter element in a respective array of color filter elements on color filter layer 58. A grid-shaped black reticle on a thin film transistor layer can sometimes be referred to as a black matrix. In the inactive area IA, the black reticle can form a first portion of the light blocking structure. The second portion of the light blocking structure may be formed of an opaque structure on the underside of the color filter layer 58 such as a black strip layer in the inactive region IA.

FIG. 7 is a cross-sectional side view showing a portion of a thin film transistor layer 56 of a structural layer that can be formed on the thin film transistor layer 56. As shown in FIG. 7, the thin film transistor layer 56 can include A transparent thin film transistor substrate such as substrate 100. Substrate 100 may be formed from a clear planar structure such as a clear plastic, clear glass, or other sheet of clear substrate layer. The black mask layer 102 can be patterned to form a black matrix in the active area AA of the display 14, and can be patterned to form portions of the light-blocking black mask edges in the inactive area IA. The portion of display 14 shown in Figure 7 corresponds to the display pixels in the array of display pixels in active area AA. As shown in FIG. 7, black mask layer 102 can be patterned to form a display pixel opening such as opening 104 that is aligned with patterned display pixel electrode 110. Electrode 110 may be separated from common electrode (Vcom) trace 112 by dielectric layer 114. The clear outer coating 116 can be formed on the thin film transistor 124 from a photoimageable polymer or other dielectric. Patterned metal 118 can be used to form transistor terminals such as source S, drain D, and gate G. The gate insulator 120 may be formed of a dielectric material such as tantalum nitride and/or hafnium oxide, and may separate the gate G from the semiconductor region 122. The semiconductor region 122, which serves to form the channel region of the thin film transistor 124, may be formed of a semiconductor material such as amorphous germanium, polycrystalline germanium, indium gallium zinc oxide, or other semiconductor. A passivation layer 126 may be formed over the gate insulator 120.

The black reticle material 102 can be formed from a photoimageable material such as a black photoresist. The black photoresist can be formed from a polymer such as polyimide. The polymer used to form the black reticle material 102 preferably withstands high temperatures (e.g., temperatures of 350 ° C or higher or other suitable elevated temperatures) in order to withstand the high temperatures involved in subsequent thin film transistor fabrication steps. An opaque filler material such as carbon black and/or titanium black can be incorporated into the polyimine or other polymer of layer 102 such that layer 102 is opaque and is capable of blocking at least a portion of the stray light in the inactive region IA.

The planarization layer 106 is used to planarize the black mask layer 102 such that a thin film transistor circuit such as a transistor 124 can be formed on the black mask layer 102 (ie, such that the thin film transistor can overlap black as shown in FIG. Photomask 102). In a suitable configuration, the planarization layer 106 is formed from a black reticle compatible material having a low dielectric constant, such as spin-on glass. For example, the planarization layer 106 can be a spin-on glass such as yttria-based (eg, bismuth citrate) Spin-coated glass) is formed by spin-on glass. The structure of Figure 7 can undergo high processing temperatures (e.g., temperatures of 350 ° C or higher) during film transistor formation. The polyimide film black mask layer 102 and the spin-on glass planarization layer 106 are preferably capable of withstanding such high temperature processing (ie, the spin-on glass layer 106 will not undergo a reduction in transparency and polyimine. Layer 102 will not be degraded).

In some embodiments, a buffer layer such as inorganic buffer layer 107 may be formed at the interface between planarization layer 106 and TFT layer 108. The buffer layer 107 can be a thin layer of tantalum nitride, yttria, and/or other inorganic materials having a thickness of 250 to 3000 angstroms (as an example). The inorganic buffer layer 107 formed in this manner can be used to prevent chemicals such as etching solutions from being injected into the spin-on glass planarization layer 106 during formation of the TFT circuit in the layer 108.

There is a need to limit the amount of opaque filler in material 102 because too much filler material can reduce the resistivity of layer 102 to an undue low level, potentially interfering with the satisfactory operation of the thin film transistor circuit formed on thin film transistor layer 56. . When the amount of opaque filler is limited, the opacity of the black mask layer in the inactive edge IA will also be limited. The thickness T1 of the black mask layer 102 may be slightly increased to increase the optical density (opacity) of the layer 102, but excessive thickness of the black mask layer 102 should generally be avoided. If the black mask layer 102 is too thick, it may be difficult to satisfactorily planarize the black mask layer 102. Additionally, the excessive thickness T2 in the associated planarization layer can create undesirable color casts in the active regions of the display 14 and/or can reduce the transmittance in the active regions of the display 14. Excessive values of thicknesses T1 and T2 can also cause cracking in layers 102 and/or 106 (e.g., cracks can occur due to imperfect matching of the coefficients of thermal expansion of the materials of layers 102 and 106).

In view of such constraints, it may be desirable to limit the thickness T1 of the black mask layer 102 to a small value (eg, about 1.5 microns, less than 2 microns, 1 to 2 microns, less than 3 microns, or other suitable value). The thickness T2 can then be limited to an equally small thickness value. For example, the thickness T2 of the planarization layer 106 can be about 3 microns, less than 5 microns, 2 to 5 microns, less than 4 microns, less than 3 microns, or other suitable value.

In the configuration of display 14 where the thickness T1 of black mask layer 102 is relatively small and the amount of opaque filler in layer 102 is limited, the black mask edge formed by black mask layer 102 in inactive area IA It may not be opaque enough to act as the only light blocking structure at the edge of display 14. Thus, one or more additional light blocking structural layers may be formed in the inactive area IA to complement the reticle function performed by the black mask layer 102. An illustrative configuration of this type is shown in Figure 8.

As shown in FIG. 8, display 14 can have an active area AA (eg, a central rectangular active area filled with display pixels) and can have a non-active area IA extending along the perimeter of active area AA. The left edge of the inactive area edge region IA is shown in the illustrative portion of the display 14 depicted in FIG.

Thin film transistor layer 56 is over color filter layer 58. The thin film transistor layer 56 includes a substrate 100, a black mask layer 102, a spin-on glass planarization layer 106, and a thin film transistor circuit such as a thin film transistor circuit layer 108. The liquid crystal material 52 is interposed between the thin film transistor layer 56 and the color filter layer 58. Encapsulant 136 (eg, a rectangular ring of epoxy or other adhesive extending around the rectangular perimeter of display 14) can be used to seal liquid crystal material 52 in display 14. The color filter layer 58 has a transparent substrate such as a substrate 130. The substrate 130 may be formed of a flat layer of clear glass, a transparent plastic layer or other transparent substrate material. An array of color filter elements 134 can be formed on the surface of substrate 130. The color filter element 134 may include a red color filter element R, a blue color filter element B, and a green color filter element G. Color filter element 134 can be formed from a colored light imageable polymer. An opaque reticle material layer, such as black photoimageable polymer layer 132, may form a black matrix in the active region AA. The black matrix can have a grid shape with an array of rectangular openings. Individual color filter elements 134 may be formed in each of the black matrices formed by opaque mask layer 132 on color filter substrate 130. Each of the color filter elements 134 on the color filter layer 58 can be in an array of openings in a black matrix formed by the layer 102 on the inner surface of the thin film transistor substrate layer 100. Individual openings 104 horizontal Alignment (i.e., each display pixel in display 14 can have an opening 104, an associated display pixel electrode in layer 108, and an associated aligned color filter element through which backlight 44 passes) 134). As shown in FIG. 8, some of the black mask layers 132 on the substrate 130 may extend into the inactive area IA and may help block stray light from the backlight 42.

The additional light blocking in the inactive area IA may be provided by a light blocking structure on the lower (outermost) surface of the color filter layer substrate 130 (i.e., on the lower surface of the color filter layer 58). As shown in FIG. 8, for example, an opaque tape such as black strip 138 may be laminated to the lower surface of color filter layer substrate 130 in inactive area IA. Black strip 138 may have an opaque carrier such as carrier 142 and have an adhesive layer such as adhesive layer 140.

The opaque carrier 142 can be formed from a flexible polymer such as a cellulose triacetate layer, an acrylic resin layer, a polyethylene terephthalate (PET) layer, a layer formed from one or more other polymers. a fabric carrier; a conductive fabric carrier (for example, a fabric tape substrate formed of a conductive fiber such as a metal fiber or a metal coated polymer fiber, a combination of a conductive fiber and a non-conductive fiber, etc.); having a solid polymer layer and A carrier of both of the fibers; or other suitable tape layer(s) that serve as a carrier for the adhesive such as the adhesive layer 140. The material of the carrier 142 can be made opaque by incorporating an opaque filler material (e.g., carbon black, titanium black, etc.) into the polymeric material of the carrier 142, and/or can be coated with an opaque material such as black ink. One or both surfaces of the carrier 142 are such that the material of the carrier 142 is opaque. An opaque material (eg, carbon black, titanium black, etc.) can be incorporated into the adhesive layer 140 as desired (ie, the adhesive layer 140 can be formed of an opaque material such as a black adhesive). The adhesive layer 140 can be a pressure sensitive adhesive or other adhesive and can be formed from a polymer such as an acrylic resin or other suitable material. The adhesive layer 140 may be formed using a conductive material as needed.

In a suitable configuration, the black strip 138 can have an optical density of about 5.7 (eg, 4 or greater, 5 or greater, 4 to 7, or other suitable optical density), can have about 0.045 mm (eg, For example, a total thickness of 0.03 to 0.07 mm, greater than 0.02 mm, less than 0.1 mm, etc., and may be formed of a conductive fabric carrier coated with a black conductive acrylic resin adhesive layer. In addition to acting as a light shield, the conductive strip can also be used to provide RF interference shielding and/or electrical grounding. The belt 138 can be cut by a die to form a desired shape (e.g., a rectangular ring), can be formed as an elongated strip, or can be otherwise shaped into a desired set for use as an additional light blocking layer of the inactive area IA of the display 14. state. The belt 138 can be applied manually and/or using a computer controlled belt dispensing device.

As shown in FIG. 8, backlight 44 from backlight unit 42 can pass through polarizer 60 and other layers of display 14 to act as a backlight in active area AA. In the inactive area IA, a stray backlight such as the illustrative stray backlight ray 44' of Figure 8 needs to be blocked. This is achieved using at least two light blocking structures in the inactive region IA: the strip 138 and the black edges formed by the black mask layer 102 on the thin film transistor layer 56. Layer 132 on color filter layer 58 may also assist in blocking stray light in inactive area IA.

Illustrative steps involved in forming a display such as display 14 of FIG. 8 are shown in FIG. As shown in FIG. 9, during fabrication of the thin film transistor layer 56, the black mask layer 102 can be patterned onto the lower surface of the thin film transistor layer substrate 100 (eg, using photolithography). In the active region AA, the patterned black mask layer structure 102 can form a grid-shaped black matrix that defines an array of display pixel openings 104. In the inactive region IA, the black mask layer structure formed by layer 102 can form a black edge layer that acts as a light blocking structure. At step 202, a spin-on glass planarization layer 106 can be deposited over layer 102 to planarize layer 102 (eg, by spin coating 106 using spin deposition techniques or using other suitable deposition techniques (such as spray techniques) )). In general, any suitable polymer, glass or other clear material can be used to form the planarization layer 106. An advantage of using a phthalate-based spin-on glass material is that this type of material is compatible with the dry etch process used to pattern the metal traces in the thin film transistor circuit layer 108.

At step 204, display layer 46 (FIG. 5), film 70, and backlight 42 can be assembled to form a display Display 14. In detail, the liquid crystal layer 52 may be formed between the color filter layer 58 and the thin film transistor layer 56, and the polarizer layers 54 and 60 may be laminated to the upper surface and the lower surface of the display 14, respectively, and other operations may be performed. Display assembly operation.

At step 206, the black strip 138 can be attached to the lower surface of the color filter layer 58 in the inactive area IA (ie, the strip 138 can be applied to the lower surface of the substrate 130 adjacent to the polarizer 60). . When necessary, in addition to or instead of the black strip 138, for example, black ink (for example, a polymer having a black filler), a metal strip, an ink containing metal particles (that is, a metal ink), a metal layer, or the like may be used. An opaque reticle structure of opaque material or a combination of two or more of these structures.

At step 208, the device assembly operation can be completed and the device 10 can be used to display an image to the user. Backlight structure 42 may produce backlight 44 during operation. In the active region AA, the backlight 44 is allowed to pass through the color filter elements 134 on the color filter layer 58 and the associated openings 104 in the black matrix formed in the thin film transistor layer 56. In the inactive region IA, the stray backlight from the backlight structure 42 (see, for example, the stray backlight 44' of FIG. 8) is blocked by a stray light blocking structure that includes at least two stray light blocking layers. The innermost light blocking layer is formed by a black strip 138. The outermost light blocking layer is formed by the edge portion of the black mask layer 102 on the lower surface of the thin film transistor layer substrate 100. The layer 132 on the upper surface of the color filter layer 58 can also block some stray light in the inactive area IA. Because the strip 138 helps to block stray light, it is possible to form the light blocking layer 102 from a layer of black mask material that is thinner than would otherwise be possible with the black mask material layer, thereby ensuring the black mask layer 102 and associated planarization layer 106. Not too thick.

According to an embodiment, a display having an active area and an inactive edge area is provided, the display comprising: a display layer including an array of display pixels in an active area, the display layer comprising a color filter layer and a a thin film transistor layer; and a light blocking structure in the inactive region, the light blocking structure comprising a first light blocking structure on the thin film transistor layer and a second light on the color filter layer Block structure.

According to another embodiment, the second light blocking structure comprises a strip.

According to another embodiment, the belt comprises a black belt.

In accordance with another embodiment, the thin film transistor layer has a thin film transistor layer substrate having a patterned black mask layer on the substrate and the patterned black mask layer in the inactive region A portion of the first light blocking structure is formed.

In accordance with another embodiment, the display includes a backlight structure with a color filter layer interposed between the thin film transistor layer and the backlight structure.

In accordance with another embodiment, the thin film transistor layer includes a planarization layer on the patterned black mask layer.

In accordance with another embodiment, a thin film transistor layer includes a thin film transistor and an inorganic buffer layer formed between the planarization layer and the thin film transistor.

According to another embodiment, the planarization layer comprises a spin-on glass.

According to another embodiment, the spin-on glass comprises a phthalate spin-on glass.

According to another embodiment, the black mask layer comprises black polyimine.

According to an embodiment, a display is provided, the display comprising a thin film transistor layer, a color filter layer, a liquid crystal layer between the thin film transistor layer and the color filter layer, and backlighting the display a backlight light guide plate interposed between the liquid crystal layer and the backlight light guide plate, the thin film transistor layer having a transparent substrate layer having a patterned black layer on the transparent substrate layer a photomask layer having a spin-on glass planarization layer covering the patterned black mask layer, and the thin film transistor layer having a thin film transistor circuit on the spin-on glass planarization layer Floor.

In accordance with another embodiment, the display includes a black strip on the color filter layer that blocks stray backlights from the backlight light guide.

In accordance with another embodiment, the thin film transistor layer and the color filter layer have an active region associated with the display pixel array and have an inactive edge that has no display pixels. The area, and the black strip is attached to the color filter layer in the inactive edge region.

In accordance with another embodiment, the display includes an upper polarizer on the thin film transistor layer and a lower polarizer on a lower surface of the color filter layer, the black strip being attached to the lower surface of the color filter layer, adjacent In the lower polarizer.

According to another embodiment, the patterned black mask layer has a thickness of less than 2 microns.

In accordance with another embodiment, the patterned black mask layer comprises a photoimageable polymer comprising an opaque filler material.

In accordance with another embodiment, the thin film transistor layer further includes an inorganic buffer layer interposed between the spin-on glass planarization layer and the thin film transistor circuit layer and the thin film transistor in the thin film transistor circuit layer. Chemicals are prevented from flowing into the spin-on glass planarization layer during formation of the structure.

According to an embodiment, an electronic device is provided, the electronic device comprising a housing and a display in the housing, the display having a rectangular active area and having a non-active edge extending along a peripheral edge of the rectangular active area The housing is configured such that the inactive edge region is not partially overlapped by the housing, the display comprising: a backlight structure for providing backlighting of the display; a thin film transistor layer having a patterned black mask layer, covering a clearing layer of the black mask layer and a thin film transistor circuit layer on the planarization layer; a color filter layer having a clear color filter layer substrate, the color filter The light sheet layer is between the backlight structure and the thin film transistor layer; a light blocking structure on the lower surface of the clear color filter layer substrate in the inactive edge region; and the color filter layer a liquid crystal layer between the thin film transistor layer.

In accordance with another embodiment, one of the light blocking structure and the black mask layer partially overlaps the inactive edge region in the inactive edge region such that the light blocking structure and the black are in the inactive edge region The portion of the mask layer in the inactive edge region blocks and prevents stray backlighting from the backlight structure from exiting the display.

According to another embodiment, the light blocking junction on the surface below the clear color filter layer The structure includes a black belt.

According to another embodiment, the clear planarization layer comprises a spin-on glass.

According to another embodiment, the black mask layer comprises black polyimide and has a thickness of less than 2 microns.

The foregoing is merely illustrative, and various modifications may be made by those skilled in the art without departing from the scope and spirit of the described embodiments. The foregoing embodiments may be implemented individually or in any combination.

14‧‧‧ display

42‧‧‧Backlight unit/backlight structure/backlight

44‧‧‧ Backlight

44'‧‧‧Descriptive stray backlighting

52‧‧‧Liquid layer/liquid crystal material

54‧‧‧Upper (outermost) polarizer layer

56‧‧‧Display layer/external substrate layer/thin film transistor layer

58‧‧‧Display layer/internal substrate layer/color filter layer

60‧‧‧ Lower (most internal) polarizer layer / polarizer

100‧‧‧Substrate/Thin Film Transistor Substrate

102‧‧‧Black mask layer/black mask/black mask material/polyimine black mask layer/polyimine layer/black mask layer structure

104‧‧‧ Opening/display pixel opening

106‧‧‧Developing layer / spin-on glass flattening layer / spin-on glass layer

108‧‧‧TFT layer/thin film transistor circuit layer

130‧‧‧Substrate/Color Filter Substrate/Color Filter Layer Substrate

132‧‧‧Black light imageable polymer layer / opaque mask layer / black mask layer

134‧‧‧Color filter components

136‧‧‧Sealant

138‧‧‧Black belt/belt

140‧‧‧Adhesive layer

142‧‧‧ Carrier

AA‧‧‧ active area

IA‧‧‧ Non-active regional/non-active marginal/inactive regional marginal zone

TFT‧‧‧thin film transistor

Claims (20)

A display having an active area and an inactive edge area, the display comprising: a display layer, the display comprising one of the active pixels in the active area, wherein the display layer comprises a first display a color filter layer on the substrate and a thin film transistor layer on a second display substrate; and a light blocking structure in the inactive edge region, wherein the light blocking structures are included in the thin film transistor a first light blocking structure on the layer and a second light blocking structure on the color filter layer, wherein the first light blocking structure comprises a film inserted between the thin film transistor layer and the second display substrate Once patterned the polymer layer, and wherein the patterned polymer layer comprises openings that do not contain a polymeric layer. The display of claim 1, wherein the second light blocking structure comprises a tape. The display of claim 2, wherein the strip comprises a black strip. The display of claim 3, wherein the portion of the patterned polymer layer in the inactive region forms the first light blocking structure. The display of claim 4, further comprising a backlight structure, wherein the color filter layer is interposed between the thin film transistor layer and the backlight structure. The display of claim 5, wherein the thin film transistor layer further comprises a planarization layer on the patterned polymer layer. The display of claim 6, wherein the thin film transistor layer further comprises a thin film transistor and an inorganic buffer layer formed between the planarization layer and the thin film transistor. The display of claim 6, wherein the planarization layer comprises spin-on glass. The display of claim 8, wherein the spin-on glass comprises a bismuth silicate spin coating Glass. The display of claim 4, wherein the patterned polymer layer comprises black polyimine. A display having an active region and a non-active region, the display comprising: a thin film transistor layer; a color filter layer having a first surface and a second surface; a liquid crystal layer Between the thin film transistor layer and the color filter layer; and a backlight light guide plate that provides backlighting for the display, wherein the color filter layer is interposed between the liquid crystal layer and the backlight light guide plate The thin film transistor layer has a transparent substrate layer, wherein the thin film transistor layer has a black mask layer on the transparent substrate layer in the active region of the display and the inactive region, wherein the black mask layer The mask layer is patterned in the active region, wherein the thin film transistor layer has a spin-on glass planarization layer covering the patterned black mask layer, wherein the thin film transistor layer has the spin-on layer a thin film transistor circuit layer on the glass planarization layer, wherein the color filter layer has a first light blocking layer on the first surface and a second light blocking layer on the second surface And wherein the black mask layer overlaps the first layer and the second light blocking layer in the light-blocking region of the non-active. The display of claim 11, wherein the first light blocking layer comprises a black strip that blocks stray backlights from the backlight light guide. The display of claim 12, wherein the active area comprises a display pixel array, and the inactive area does not include display pixels, and wherein the black strip is attached to the color filter layer in the inactive area. The display of claim 13, further comprising: an upper polarizer on the thin film transistor layer; a lower polarizer, wherein the first surface is a lower surface of the color filter layer, and wherein the black strip is attached to the lower surface of the color filter layer adjacent to the lower polarizer. The display of claim 14, wherein the patterned black mask layer has a thickness of less than 2 microns. The display of claim 15 wherein the patterned black mask layer comprises a photoimageable polymer comprising a opaque filler material. The display device of claim 11, wherein the thin film transistor layer further comprises an inorganic buffer layer interposed between the spin-on glass planarization layer and the thin film transistor circuit layer and in the thin film transistor circuit Preventing chemicals from flowing into the spin-on glass planarization layer during formation of the thin film transistor structure in the layer. An electronic device comprising: a housing; and a display in the housing, wherein the display has a rectangular active region and has an inactive edge region extending along a peripheral edge of the rectangular active region, wherein the The outer casing is configured such that the inactive edge region is not partially overlapped by the outer casing, wherein the display comprises: a backlight structure that provides backlighting for the display; and a thin film transistor layer having patterned black containing one of the polymers a mask layer, a clear planarization layer covering the black mask layer, a gate insulating layer, and a gate electrode and a thin film transistor circuit layer on the planarization layer, wherein the gate a pole electrode is interposed between the semiconductor region and the black mask layer, wherein the planarization layer is interposed between the gate electrode and the black mask layer, wherein the thin film transistor layer is formed on a display substrate Upper, and wherein the black mask layer is interposed between the planarization layer and the display substrate; a color filter layer having a clear color filter layer substrate, wherein the color filter layer substrate is between the backlight structure and the thin film transistor layer; a first light blocking structure, And a second light blocking structure on one of the clear color filter layer substrates in the inactive edge region; Surfacely, wherein the black mask layer overlaps the first light blocking structure and the second light blocking structure in the inactive edge region. The electronic device of claim 18, wherein the first light blocking structure, the second light blocking structure, and the black mask layer in the inactive edge region are blocked and prevented from being in the inactive edge region A stray backlight of the backlight structure exits the display. The electronic device of claim 19, wherein the first light blocking structure on the lower surface of the clear color filter layer substrate comprises a black strip.