CN104267529A - Border Mask Structure Used For Liquid Crystal Display - Google Patents
Border Mask Structure Used For Liquid Crystal Display Download PDFInfo
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- CN104267529A CN104267529A CN201410522299.7A CN201410522299A CN104267529A CN 104267529 A CN104267529 A CN 104267529A CN 201410522299 A CN201410522299 A CN 201410522299A CN 104267529 A CN104267529 A CN 104267529A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
Abstract
The invention relates to a border mask structure used for a liquid crystal display. The display has a film transistor layer and a color filter layer. The display can have a valid area and an invalid area. A light barrier structure in the invalid border area can prevent stray backlight from a backlight guide board from leaking from the display. The film transistor layer can have a transmission substrate, a patternized black mask layer disposed on the transmission substrate, a transmission planar layer disposed on the black mask layer and a film transistor circuit layer disposed on the transmission planar layer. The black mask layer is made of black polyimide capable for optical imaging. The transmission planar layer is made of spinning glass. The light barrier structure includes a first layer formed by a part of the black mask layer and a second layer such as a black tape material layer disposed on the lower side of the color filter layer.
Description
cross-reference to related applications
This application claims the right of priority of the U.S. Provisional Patent Application 61/909,276 of the U.S. Patent application submission on November 26th, 14/164,026 and 2013 submitted on January 24th, 2014, above-mentioned patented claim is incorporated herein by reference accordingly in full.
Technical field
Its entirety relates to electronic equipment, and relates more specifically to the electronic equipment with display.
Background technology
Electronic equipment usually comprises display.Such as, cell phone, computing machine and televisor have display.
Display such as liquid crystal display has the effective coverage being filled with array of display pixels.Effective coverage is surrounded by invalid edges boundary region.Possible expectation minimization or eliminate the use of ugly border structure in invalid edges boundary region.In the display with little frame or Rimless, there is the risk that backlight possibility seepage enters invalid edges boundary region.If do not add careful, spuious backlight undesirably will illuminate inactive area.
Therefore, the resistance photo structure of the improvement of the invalid edges boundary region that can be provided in display such as liquid crystal display is wished.
Summary of the invention
Electronic equipment can have display, such as liquid crystal display.Liquid crystal display can have upper polarizer and lower polaroid.Liquid crystal material layer can be inserted between tft layer and color-filter layer.Tft layer can be inserted between liquid crystal layer and upper polarizer.Color-filter layer can be inserted between liquid crystal layer and lower polaroid.
Tft layer and color-filter layer can have the array of display pixels be associated of the effective coverage limiting display.The display pixel of effective coverage can be used for image to be shown to user.Invalid edges boundary region in display can extend along the periphery in territory, effective display area.Resistance photo structure in inactive area can prevent from leaking out display from the spuious backlight of backlight source light conducting plate.
Tft layer can have transparent substrates, the black masks layer of the patterning be positioned on transparent substrates, the thin-film transistor circuit layer that is positioned at the transmission plane layer on black masks layer and is positioned on transmission plane layer.Black masks layer can be formed by black Photoimageable polyimide.Transmission plane layer can be formed by spin-on glasses.Resistance photo structure can comprise the ground floor formed by a part for the black masks layer in inactive area, and can comprise the second layer, is such as positioned at the black bands sheet material layers of the downside of this color-filter layer of this lower polaroid contiguous.
Accompanying drawing explanation
Fig. 1 is a kind of skeleton view with the exemplary electronic equipment such as laptop computer of display according to an embodiment.
Fig. 2 is a kind of skeleton view with the exemplary electronic equipment such as hand-held electronic equipment of display according to an embodiment.
Fig. 3 is a kind of skeleton view with the exemplary electronic equipment such as panel computer of display according to an embodiment.
Fig. 4 be there is display according to an embodiment a kind of exemplary electronic equipment such as the skeleton view of the display of computing machine or televisor.
Fig. 5 is the cross-sectional side view of a kind of exemplary display according to an embodiment.
Fig. 6 be according to a kind of exemplary electronic equipment of an embodiment illustrate the edge of display in this equipment as why not the cross-sectional side view containing a part for overlapping shell mechanism.
Fig. 7 is the cross-sectional side view of the structure that can the tft layer in a kind of exemplary display be formed according to an embodiment and thin film circuit.
Fig. 8 is the cross-sectional side view of a kind of exemplary display according to an embodiment.
Fig. 9 forms a kind of process flow diagram with the exemplary step of the electronic equipment of display according to relating to of an embodiment.
Embodiment
Fig. 1, can have the exemplary electronic equipment of the type of display shown in 2,3 and 4.
The electronic equipment 10 of Fig. 1 has the shape of laptop computer and has the lower case 12B of upper case 12A and the base part with such as keyboard 16 and touch pad 18.Equipment 10 has hinge arrangement 20 (being sometimes referred to as shaft coupling socket) and rotates around turning axle 24 on direction 22 relative to lower case 12B to allow upper case 12A.Display 14 is arranged in shell 12A.Upper case 12A can be described as display casing or lid sometimes, is placed on make-position by rotating this upper case 12A around turning axle 24 towards lower case 12B.
Fig. 2 illustrates the exemplary configuration of the electronic equipment 10 based on handheld device such as cell phone, music player, game station, navigation elements or other compact devices.In such configuration of equipment 10, shell 12 has relative front surface and rear surface.Display 14 is arranged on the front of shell 12.Display 14 can have skin, and this skin comprises the opening for the such as parts of button 26 and speaker port 28 and so on.If needed, equipment 10 can be compact device, such as Wrist belt-type equipment or hanging equipment (exemplarily).
In the example of fig. 3, electronic equipment 10 is panel computer.In the electronic equipment 10 of Fig. 3, shell 12 has relative flat front and rear surface.Display 14 is arranged on the front surface of shell 12.As shown in Figure 3, display 14 has the opening for holding button 26.
Fig. 4 illustrates the exemplary configuration of electronic equipment 10, and wherein equipment 10 is graphoscope, has computing machine or the televisor of integration computer display.Display 14 is arranged on the front of shell 12.In such layout, the shell 12 of equipment 10 can be arranged on wall maybe can have optional structure, such as equipment 10 being supported on the support 30 on the flat surfaces of such as desk or desk and so on.
The display that the display technique that display 14 can be liquid crystal display or uses other suitable is formed.The cross-sectional side view of the exemplary configuration of the display 14 (liquid crystal display of the equipment such as, in Fig. 1-4 or other suitable electronic equipments) of equipment 10 is shown in Figure 5.As shown in Figure 5, display 14 can comprise backing structure, such as generation of the back light unit 42 of backlight 44.During operation, backlight 44 outwards propagates (in the orientation of Fig. 5 in Z dimension straight up) and through the display picture element structure in display layer 46.This just illuminates any image for watching for user produced by this display picture element.Such as, backlight 44 can illuminate the image watched on direction 50 by beholder 48 on display layer 46.
Display layer 46 can be arranged in Undercarriage structure such as plastic bottom shelf structure and/or metal bottom shelf structure to be formed for being arranged on the display module in shell 12, or display layer 46 can be directly installed on (such as, by being stacked in the recessed portion of shell 12 by display layer 46) in shell 12.
Display layer 46 can comprise liquid crystal layer, such as liquid crystal layer 52.Liquid crystal layer 52 can be sandwiched in display layer such as between display layer 58 and 56.Layer 56 and 58 can be inserted in down (inner side) between polarization layer 60 and upper (outermost) polarization layer 54.
Layer 58 and 56 can be formed by transparent substrate layer, the glass of such as printing opacity or plastic layer.Layer 56 and 58 can be the layer of such as tft layer and/or color-filter layer and so on.Conductive trace, color filter element, transistor and other circuit and structure can be formed on the substrate of layer 58 and 56 and (such as, form tft layer and/or color-filter layer).Also tactile sensor electrode can be attached in the layer of such as layer 58 and 56 and so on and/or tactile sensor electrode can be formed on other substrates.
In an exemplary configuration, outer substrate layer 56 can be tft layer, and it comprises for applying electric field to liquid crystal layer 52 thus the electrode (display picture element electrode) that image is shown series of thin film transistor on display 14 and is associated.Interior substrate layer 58 can be color-filter layer, and it comprises a series of color filter element for providing the ability of color display for display 14.
Backing structure 42 can comprise light guide plate, such as light guide plate 78.Light guide plate 78 can be formed by transparent material such as transparent glass or plastics.During the operation of backing structure 42, light source such as light source 72 can produce light 74.Such as, light source 72 can be light emitting diode matrix.
Light 74 from light source 72 can be coupled in the edge surface 76 of light guide plate 78 and due to the principle of total internal reflection and can be distributed in X and Y dimension in whole light guide plate 78.Light guide plate 78 can comprise scattering characteristics portion, such as pit or projection.This scattering characteristics portion can be positioned at the upper surface of light guide plate 78 and/or be positioned at relative lower surface.
Light 74 from the upwards scattering in z-direction of light guide plate 78 can be used as the backlight 44 of display 14.The light 74 of downward scattering reflects in an upward direction by transmitter 80.Transmitter 80 can be formed by reflecting material, such as white plastic or other glossy material layers.
In order to improve the backlight performance of backing structure 42, backing structure 42 can comprise blooming 70.Blooming 70 can comprise for contribute to homogenising backlight 44 and thus reduce focus diffusion layer, for optimizing compensate film and the brightness enhancement film (sometimes also referred to as turning film) for calibrating backlight 44 of off-axis viewing.Blooming 70 can be overlapping with other structures in back light unit 42 such as light guide plate 78 and transmitter 80.Such as, if light guide plate 78 has rectangle occupied area in the X-Y plane of Fig. 5, blooming 70 and transmitter 80 can have the rectangle occupied area of coupling.
Display 14 can have display pixel array (such as, having the rectangular array of number row and ordered series of numbers) so that image is shown to beholder.The vertical signal line being called as data line can be used for respective column display data being delivered to display picture element.The horizontal signal lines being called as gate line can be used for corresponding line gate line signal (sometimes also referred to as grid control signal or signal) being delivered to display picture element.The contour limit of the display pixel array in display 14 effective coverage of display 14.Effective coverage can have rectangular shape and can be surrounded by invalid edges boundary region.Such as, invalid edges boundary region can along of an effective coverage edge, two edges, three edges or all four edges extend.
The cross-sectional side view with the exemplary electronic equipment of display (display 14 of such as Fig. 5) is shown in Figure 6.As shown in Figure 6, image can show on effective coverage, the center AA of display 14.Inactive area IA can have the rectangular loop shape that the rectangle perimeter around effective coverage AA extends.In order to avoid the ugly border structure in equipment 10, may wish nullified region IA containing overlapping shell mechanism, frame or other may lack the border structure of attractive force.
In order to avoid the light leak (such as, when there is not frame or other overlay structures in order to prevent parasitic light from overflowing) in inactive area IA, display 14 can have the border mask structure being arranged in inactive area IA.Border mask structure can contribute to stopping the spuious backlight from back light unit 42, thus guarantees that border IA does not allow unnecessary light to overflow.Therefore, the backlight of back light unit 42 will be limited in the AA of effective coverage.
In order to provide gratifying resistance luminous energy power in inactive area IA, resistance photo structure can be formed by two parts (such as, two-layer).The Part I of resistance photo structure can be formed by the black masks layer of the downside being positioned at tft layer 56.In the AA of effective coverage, patterning can be carried out to form black masks to this black masks layer.This black masks is the black lines of a series of grid-like cross, and it limits the rectangular array of the translite displays pixel openings in tft layer.Each opening in black masks color filter element corresponding to the corresponding array of color filter elements be arranged on color-filter layer 58 is aimed at.The latticed black masks be positioned on tft layer also can be called as black matrix" sometimes.In inactive area IA, black masks can form the Part I of resistance photo structure.The Part II of resistance photo structure can be formed by the opaque structure be positioned on the downside of color-filter layer 58, the black bands sheet material layers in such as inactive area IA.
Fig. 7 is the cross-sectional side view of a part for tft layer 56, and it illustrates the structural sheet that can be formed on tft layer 56.As shown in Figure 7, tft layer 56 can comprise transparent thin film transistor base plate, such as substrate 100.Substrate 100 can be formed by transmission plane structure, such as transparent plastic thin, clear glass thin plate or other transparent substrate.Black masks layer 102 can be patterned the black matrix" that formed in the effective coverage AA of display 14 and can be patterned the part on the resistance light black masks border formed in inactive area IA.The part of the display 14 shown in Fig. 7 corresponds to the display picture element being arranged in inactive area AA in display pixel array.As shown in Figure 7, black masks layer 102 can be patterned to form display picture element opening, the opening 104 such as aimed at the display picture element electrode 110 of patterning.Electrode 110 is separated by dielectric layer 114 and public electrode (Vcom) trace 112.Light transmission protective layer 116 can be formed by the polymkeric substance of Photoimageable or other dielectrics at the top of thin film transistor (TFT) 124.The metal 118 of patterning can be used for forming transistor terminal, such as source S, drain D and grid G.Gate insulator 120 can be formed by dielectric material, such as silicon nitride and/or monox, and grid G and semiconductor regions 122 can be separated.Semiconductor regions 122 for the formation of the channel region of thin film transistor (TFT) 124 can be formed by semiconductor material, such as amorphous silicon, polysilicon, indium oxide gallium zinc or other semiconductors.Passivation layer 126 can be formed on the top of gate insulator 120.
Black masks material 102 can be formed by the material of Photoimageable, such as black photoresist.This black photoresist can be formed by polymkeric substance such as polyimide.In order to tolerate in follow-up thin film transistor (TFT) making step involved high temperature, the polymkeric substance for the formation of black masks material 102 can preferably withstand high temperatures (such as, 350 DEG C or higher temperature or other suitable high temperature).In the polyimide that can be incorporated into layer 102 by black to opaque packing material such as carbon black and/or titanium or other polymkeric substance, make layer 102 for opaque and can stop parasitic light enter inactive area IA at least partially.
Complanation layer 106 for making black masks layer 102 concordant so that the thin-film transistor circuit of such as transistor 124 and so on can be formed in black masks layer 102 (that is, as shown in Figure 7, make thin film transistor (TFT) can be overlapping with black masks 102).In a kind of suitable layout, complanation layer 106 is formed by the black masks compatible material such as spin-on glasses with low-k.Such as, complanation layer 106 such as can be formed based on the spin-on glasses (such as, silicate spin-on glasses) of monox by spin-on glasses.Between thin film transistor (TFT) Formation period, the structure of Fig. 7 can stand the processing temperature (such as, 350 DEG C or higher temperature) raised.Polyimide black masks layer 102 and spin-on glasses complanation layer 106 preferably can tolerate processing (that is, spin-on glasses layer 106 will not experience the reduction of transparency and polyimide layer 102 will be not deteriorated) at these higher temperatures.
In certain embodiments, cushion, such as inorganic cushion 107, can be formed at the surface of contact place between complanation layer 106 and TFT layer 108.Cushion 107 can be silicon nitride, monox and or has the thin layer of other inorganic material of thickness of 250-3000 dust (such as).Formed by this way, inorganic cushion 107 can be used as preventing the chemicals of such as etching solution and so between the TFT circuit Formation period in layer 108 to be injected in spin-on glasses complanation layer 106.
Because too many packing material may make the resistivity of layer 102 be down to unexpected reduced levels, so that hindering the thin-film transistor circuit to being formed on tft layer 56 to carry out gratifying operation potentially, therefore wishing the amount of the opaque filler in limiting material 102.When limiting the amount of opaque filler, the opacity of the black masks layer in invalid border IA also will be restricted.The thickness T1 of black masks layer 102 can be increased a little to increase the optical density (opacity) of layer 102, but the thickness of black masks layer 102 usually should be avoided excessive.If black masks layer 102 is too thick, then may be difficult to make black masks layer 102 concordant to gratifying degree.In addition, the transmittance that the excessive thickness T2 in the complanation layer be associated may cause the unexpected colour cast in the effective coverage of display 14 and/or may reduce in the effective coverage of display 14.Excessive thickness T1 and T2 value also can cause the crack in layer 102 and/or layer 106 (such as, because the non-fully coupling of the thermal expansivity of the material for layer 102 and layer 106 can cause producing crack).
In view of these constraint condition, may wish the thickness T1 of black masks layer 102 to be restricted to a smaller value (such as, about 1.5 microns, be less than 2 microns, 1-2 micron, be less than 3 microns or other suitable values).Then, thickness T2 can be restricted to relatively little one-tenth-value thickness 1/10.Such as, the thickness T2 of complanation layer 106 can be about 3 microns, is less than 5 microns, 2-5 micron, is less than 4 microns, is less than 3 microns or other suitable values).
The thickness T1 of black masks layer 102 relatively little and to layer 102 in the configuration of display 14 that limits of the amount of opaque filler, the black masks border formed by the black masks layer 102 in inactive area IA may be insufficient transparent in the special resistance photo structure on the border being used as display 14.Therefore, the one or more other layer of resistance photo structure can be formed to supplement the mask function performed by black masks layer 102 in inactive area IA.Such exemplary configuration a kind of is shown in Figure 8.
As shown in Figure 8, display 14 can have effective coverage AA (such as, being filled with the central rectangular effective coverage of display picture element) and can have the inactive area IA that the periphery along effective coverage AA extends.Shown in the exemplary part of the display 14 of left hand edge shown in Fig. 8 of invalid edges boundary region IA.
Tft layer 56 is positioned at above color-filter layer 58.Tft layer 56 comprises substrate 100, black masks layer 102, spin-on glasses complanation layer 106 and thin-film transistor circuit, such as thin-film transistor circuit layer 108.Liquid crystal material 52 is inserted between tft layer 56 and color-filter layer 58.Sealant 136 (epoxy resin such as, extended around the rectangle perimeter of display 14 or the straight-flanked ring of other bonding agents) can be used for sealing the liquid crystal material 52 in display 14.Color-filter layer 58 has transparency carrier such as substrate 130.Substrate 130 can be formed by the translucent glass layer of plane, clarity plastic layer or other transparency carrier materials.A series of color filter element 134 can be formed on the surface of substrate 130.Color filter element 134 can comprise red color filter element R, blue color filter element B and green color filter element G.Color filter element 134 can be formed by the polymkeric substance of colored Photoimageable.Opaque mask layer, the polymeric layer 132 of such as black Photoimageable, can form the black matrix" in the AA of effective coverage.This black matrix" can have the mesh shape with rectangular aperture array.Corresponding color filter element 134 can be formed at each opening of this black matrix" formed by the opaque mask layer 134 be arranged on filter substrate 130.The each color filter element 134 being arranged in the array of color filter elements on color-filter layer 58 can be corresponding to the aperture array being formed in the black matrix" on the inside surface of thin film transistor base plate layer 100 by layer 102 opening 104 lateral alignment (that is, each display picture element of display 14 can have opening 104, be arranged in the color filter element 134 of the aligning be associated that the display picture element electrode be associated of layer 108 and backlight 44 pass).As shown in Figure 8, some being arranged in the black masks layer 132 on substrate 130 may extend into inactive area IA and can contribute to stopping the parasitic light from backlight 42.
Other photoresistances in inactive area IA can be provided by the resistance photo structure being positioned at color-filter layer substrate 130 times (outermost) surface (that is, being positioned at the lower surface of color-filter layer 58).As shown in Figure 8, such as, the zone of opacity sheet material layers of such as black band 138 and so on can be depressed into the lower surface of the color-filter layer substrate 130 in inactive area IA.Black band 138 can have opaque carrier such as carrier 142 and can have adhesive phase such as adhesive phase 140.
Opaque carrier 142 can by flexible polymer skin such as Triafol T layer, acrylate layer, polyethylene terephthalate (PET), the layer formed by one or more other polymkeric substance, fabric carrier, conductive fabric carrier (such as, by conductive fiber such as metal fibre or be coated with the polymer fiber of metal, the fabric band substrate be combined to form of conductive fiber and non-conductive fiber, etc.), there is the tape carrier of solid polymeric nitride layer and fiber simultaneously, or other suitable one or more tape layer such as adhesive phase 140 of the carrier being used as bonding agent is formed.The material of carrier 142 is by by opaque packing material (such as, carbon black, titanium are black, etc.) be attached in the polymeric material of carrier 142 and become opaque, and/or become opaque by one or two surface of the opaque material coated carrier 142 with such as black ink and so on.If needed, opaque material (such as, carbon black, titanium are black, etc.) can be attached to (that is, adhesive phase 140 can be formed by the opaque material of such as dark colored binder and so on) in adhesive phase 140.Adhesive phase 140 can be pressure sensitive adhesives or other bonding agents and can be formed by polymkeric substance such as acrylic acid or other suitable materials.If needed, adhesive phase 140 can use conductive material to be formed.
In a kind of suitable layout, black band 138 can have the optical density of about 5.7 (such as, 4 or more, 5 or more, 4-7 or other suitable optical density), the gross thickness of about 0.045mm can be had (such as, 0.03-0.07mm, be greater than 0.02mm, be less than 0.1mm, etc.), and can be formed by the conductive fabric carrier of the acrylic adhesive layer being coated with black conductive.Conduction band is except being used as also to can be used for except light shield to provide radio frequency interference shield and/or electrical ground.Band 138 punchedly can form elongate strip to form the shape (such as, straight-flanked ring) expected, maybe can form the configuration of expectation to be used as shading layer other in the inactive area IA of display 14.Band 138 can manually and/or use computer-controlled band distributing equipment to apply.
As shown in Figure 8, the backlight 44 from back light unit 42 can pass other layers of polaroid 60 and display 14 to be used as the backlight in the AA of effective coverage.In inactive area IA, it is desirable to stop spuious backlight, the exemplary spuious backlight light 44 ' in such as Fig. 8.This can use at least two in inactive area IA to hinder photo structures to have come: band 138 and be formed in the black border on tft layer 56 by black masks layer 102.The layer 132 be positioned on color-filter layer 58 also can contribute to stopping that parasitic light enters inactive area IA.
The exemplary step relating to the display 14 forming display such as Fig. 8 is shown in Figure 9.As shown in Figure 9, during manufacture tft layer 56, on the lower surface of thin film transistor (TFT) laminar substrate 100 (such as, using photoetching process), patterning can be carried out to black masks layer 102.In the AA of effective coverage, the black masks Rotating fields 102 of patterning can form latticed black matrix", and it limits display picture element aperture array 104.In inactive area IA, the black masks Rotating fields formed by layer 102 can form the black border layer being used as resistance photo structure.In step 202, spin-on glasses complanation layer 106 can be deposited on the top of layer 102 to make layer 102 concordant (such as, by using spin-on deposition technique or using other suitable deposition techniques of such as spraying technology and so on to carry out spin coating to layer 106).In general, can by any suitable polymkeric substance, glass or other light transmissive materials for the formation of polarization layer 106.This material is compatible with the dry method etch technology for patterned metallization traces in thin-film transistor circuit layer 108 to use the advantage based on the spin-on-glass materials of silicate to be.
In step 204, can assemble to form display 14 to display layer 46 (Fig. 5), film 70 and backlight 42.Particularly, can liquid crystal layer 52 be formed between color-filter layer 58 and tft layer 56, polarization lamella 54 and 60 can be laminated to respectively upper surface and the lower surface of display 14, and perform other display assembly manipulation.
In step 206, black band 138 can be attached to the lower surface (that is, band 138 can be put on the lower surface adjacent to polaroid 60 of substrate 130) of the color-filter layer 58 in inactive area IA.If needed, except black band 138 or replace this black band, opaque mask structure can be used, such as black ink (such as, polymkeric substance with black filler), the combination of two or more in bonding jumper, the ink (that is, metal ink) comprising metallic particles, metal level, other opaque materials or these structures.
In step 208, can finishing equipment assembly manipulation and equipment 10 can be used for image to be shown to user.During operation, backing structure 42 can produce backlight 44.In the AA of effective coverage, allow the opening 104 that backlight 44 is associated with the black matrix" being formed at tft layer 56 through the color filter element 134 be arranged on color-filter layer 58.In inactive area IA, stop the spuious backlight (such as, see the spuious backlight 44 ' of Fig. 8) from backing structure 42 by the parasitic light barrier structure comprising at least two parasitic light restraining barriers.Inner side shading layer is formed by black band 138.Outermost shading layer is formed by the boundary member of black masks layer 102 of the lower surface being positioned at thin film transistor (TFT) laminar substrate 100.The layer 132 being positioned at the upper surface of color-filter layer 58 also can stop that some parasitic lights enter inactive area IA.Because band 138 contributes to stopping parasitic light, therefore shading layer 102 can be formed by the black masks material layer thinner than other modes of employing, thus guarantees that black masks layer 102 and the complanation layer 106 be associated can not be too thick.
According to an embodiment, provide a kind of display with effective coverage and invalid edges boundary region, it comprises: display layer, and it comprises the display pixel array in described effective coverage, and wherein said display layer comprises color-filter layer and tft layer; And the resistance photo structure in described inactive area, wherein said resistance photo structure comprises the first resistance photo structure on described tft layer and the second resistance photo structure on described color-filter layer.
According to another embodiment, described second resistance photo structure comprises band.
According to another embodiment, described band comprises black band.
According to another embodiment, described tft layer has thin film transistor (TFT) laminar substrate, wherein said tft layer has the black masks layer of the patterning on described substrate, and the part being arranged in described inactive area of the black masks layer of described patterning forms described first resistance photo structure.
According to another embodiment, display also comprises backing structure, and described color-filter layer inserts between described tft layer and described backing structure.
According to another embodiment, described tft layer comprises the complanation layer be positioned on the black masks layer of described patterning.
According to another embodiment, described tft layer comprises thin film transistor (TFT) and is formed at the inorganic cushion between described complanation layer and described thin film transistor (TFT).
According to another embodiment, described complanation layer comprises spin-on glasses.
According to another embodiment, described spin-on glasses comprises silicate spin-on glasses.
According to another embodiment, described black masks layer comprises black polyamide.
According to an embodiment, a kind of display is provided, comprises: tft layer; Color-filter layer; Liquid crystal layer between described tft layer and described color-filter layer; And provide the backlight source light conducting plate of backlight for described display, wherein said color-filter layer is inserted between described liquid crystal layer and described backlight source light conducting plate, wherein tft layer has transparent substrate layer, wherein said tft layer has the black masks layer of the patterning be positioned on described transparent substrate layer, wherein said tft layer has the spin-on glasses complanation layer of the black masks layer covering described patterning, and wherein said tft layer has the thin-film transistor circuit layer be positioned on described spin-on glasses complanation layer.
According to another embodiment, display comprises and is positioned at the black band of the stop on described color-filter layer from the spuious backlight of described backlight source light conducting plate.
According to another embodiment, described tft layer and described color-filter layer have the effective coverage be associated with display pixel array and the invalid edges boundary region had without display picture element, and wherein said black band is attached to the described color-filter layer in described invalid edges boundary region.
According to another embodiment, display comprises: be positioned at the upper polarizer on described thin film transistor (TFT); And the lower polaroid be positioned on the lower surface of described color-filter layer, described black band is attached to the lower surface adjacent to described lower polaroid of described color-filter layer.
According to another embodiment, the black masks layer of described patterning has the thickness being less than 2 microns.
According to another embodiment, the black masks layer of described patterning comprises the polymkeric substance of the Photoimageable comprising opaque packing material.
According to another embodiment, described tft layer also comprises inorganic cushion, and described inorganic cushion to be inserted between described spin-on glasses complanation layer and described thin-film transistor circuit layer and to prevent chemicals from flowing into described spin-on glasses complanation layer between the Formation period of thin-film transistor structure in described thin-film transistor circuit layer.
According to an embodiment, a kind of electronic equipment is provided, comprises: shell; And be arranged in the display of described shell, wherein said display has rectangular active area and has the invalid edges boundary region that the periphery edge along described rectangular active area extends, wherein said shell be configured to make described invalid edges boundary region not with the partly overlapping of described shell, wherein said display comprises: for described display provides the backing structure of backlight; Tft layer, it has the black masks layer of patterning, the complanation layer covering the printing opacity of described black masks layer and the thin-film transistor circuit layer be positioned on described complanation layer; Have the color-filter layer of printing opacity color filter laminar substrate, wherein said color-filter layer substrate is between described backing structure and described tft layer; Be arranged in the resistance photo structure on the lower surface of the described printing opacity color filter laminar substrate of described invalid edges boundary region; And the liquid crystal layer between described color-filter layer and described tft layer.
According to another embodiment, described resistance photo structure is overlapping in described invalid edges boundary region with the part being arranged in described invalid edges boundary region of described black masks layer, the spuious backlight from described backing structure is stopped and the described display of the described invalid edges boundary region that prevents from overflowing by the part being arranged in described invalid edges boundary region of described resistance photo structure and described black masks layer.
According to another embodiment, the described resistance photo structure be positioned on the lower surface of described printing opacity color filter laminar substrate comprises black band.
According to another embodiment, the complanation layer of described printing opacity comprises spin-on glasses.
According to another embodiment, described black masks layer comprises black polyamide and has the thickness being less than 2 microns.
Foregoing is only exemplary, and those skilled in the art can carry out various amendment when not departing from scope and the essence of described embodiment.Above-described embodiment can be implemented separately, also can combination in any implement.
Claims (20)
1. there is a display for effective coverage and invalid edges boundary region, comprising:
Display layer, it comprises the display pixel array in described effective coverage, and wherein said display layer comprises color-filter layer and tft layer; And
Resistance photo structure in described inactive area, wherein said resistance photo structure comprises the first resistance photo structure on described tft layer and the second resistance photo structure on described color-filter layer.
2. display according to claim 1, wherein said second resistance photo structure comprises band.
3. display according to claim 2, wherein said band comprises black band.
4. display according to claim 3, wherein said tft layer has thin film transistor (TFT) laminar substrate, wherein said tft layer has the black masks layer of the patterning on described substrate, and the part being arranged in described inactive area of the black masks layer of described patterning forms described first resistance photo structure.
5. display according to claim 4, also comprises backing structure, and wherein said color-filter layer inserts between described tft layer and described backing structure.
6. display according to claim 5, wherein said tft layer also comprises the complanation layer be positioned on the black masks layer of described patterning.
7. display according to claim 6, wherein said tft layer also comprises thin film transistor (TFT) and is formed at the inorganic cushion between described complanation layer and described thin film transistor (TFT).
8. display according to claim 6, wherein said complanation layer comprises spin-on glasses.
9. display according to claim 8, wherein said spin-on glasses comprises silicate spin-on glasses.
10. display according to claim 4, wherein said black masks layer comprises black polyamide.
11. 1 kinds of displays, comprising:
Tft layer;
Color-filter layer;
Liquid crystal layer between described tft layer and described color-filter layer; And
For described display provides the backlight source light conducting plate of backlight, wherein said color-filter layer is inserted between described liquid crystal layer and described backlight source light conducting plate, wherein tft layer has transparent substrate layer, wherein said tft layer has the black masks layer of the patterning be positioned on described transparent substrate layer, wherein said tft layer has the spin-on glasses complanation layer of the black masks layer covering described patterning, and wherein said tft layer has the thin-film transistor circuit layer be positioned on described spin-on glasses complanation layer.
12. displays according to claim 11, also comprise and are positioned at the black band of the stop on described color-filter layer from the spuious backlight of described backlight source light conducting plate.
13. displays according to claim 12, wherein said tft layer and described color-filter layer have the effective coverage be associated with display pixel array and the invalid edges boundary region had without display picture element, and wherein said black band is attached to the described color-filter layer in described invalid edges boundary region.
14. displays according to claim 13, also comprise:
Be positioned at the upper polarizer on described thin film transistor (TFT); And
Be positioned at the lower polaroid on the lower surface of described color-filter layer, described black band is attached to the lower surface adjacent to described lower polaroid of described color-filter layer.
15. displays according to claim 14, the black masks layer of wherein said patterning has the thickness being less than 2 microns.
16. displays according to claim 15, the black masks layer of wherein said patterning comprises the polymkeric substance of the Photoimageable comprising opaque packing material.
17. displays according to claim 11, wherein said tft layer also comprises inorganic cushion, and described inorganic cushion to be inserted between described spin-on glasses complanation layer and described thin-film transistor circuit layer and to prevent chemicals from flowing into described spin-on glasses complanation layer between the Formation period of thin-film transistor structure in described thin-film transistor circuit layer.
18. 1 kinds of electronic equipments, comprising:
Shell; And
Be arranged in the display of described shell, wherein said display has rectangular active area and has the invalid edges boundary region that the periphery edge along described rectangular active area extends, wherein said shell be configured to make described invalid edges boundary region not with the partly overlapping of described shell, wherein said display
Device comprises:
For described display provides the backing structure of backlight;
Tft layer, it has the black masks layer of patterning, the complanation layer covering the printing opacity of described black masks layer and the thin-film transistor circuit layer be positioned on described complanation layer;
Have the color-filter layer of printing opacity color filter laminar substrate, wherein said color-filter layer substrate is between described backing structure and described tft layer;
Be arranged in the resistance photo structure on the lower surface of the described printing opacity color filter laminar substrate of described invalid edges boundary region; And
Liquid crystal layer between described color-filter layer and described tft layer.
19. electronic equipments according to claim 18, wherein said resistance photo structure is overlapping in described invalid edges boundary region with the part being arranged in described invalid edges boundary region of described black masks layer, the spuious backlight from described backing structure is stopped and the described display of the described invalid edges boundary region that prevents from overflowing by the part being arranged in described invalid edges boundary region of described resistance photo structure and described black masks layer.
20. electronic equipments according to claim 19, the described resistance photo structure be wherein positioned on the lower surface of described printing opacity color filter laminar substrate comprises black band.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| US201361909276P | 2013-11-26 | 2013-11-26 | |
| US61/909,276 | 2013-11-26 | ||
| US14/164,026 US9612492B2 (en) | 2013-11-26 | 2014-01-24 | Border masking structures for liquid crystal display |
| US14/164,026 | 2014-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104267529A true CN104267529A (en) | 2015-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410522299.7A Pending CN104267529A (en) | 2013-11-26 | 2014-09-29 | Border Mask Structure Used For Liquid Crystal Display |
| CN201420567410.XU Active CN204101851U (en) | 2013-11-26 | 2014-09-29 | Display and electronic equipment |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420567410.XU Active CN204101851U (en) | 2013-11-26 | 2014-09-29 | Display and electronic equipment |
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| CN (2) | CN104267529A (en) |
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| CN107705703A (en) * | 2017-10-31 | 2018-02-16 | 昆山国显光电有限公司 | The display device of display screen and integrated display screen, cover plate |
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| CN104267529A (en) * | 2013-11-26 | 2015-01-07 | 苹果公司 | Border Mask Structure Used For Liquid Crystal Display |
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| US20200181007A1 (en) * | 2018-12-07 | 2020-06-11 | Apple Inc. | Spiral Grain Coatings for Glass Structures in Electronic Devices |
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| Publication number | Publication date |
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| CN204101851U (en) | 2015-01-14 |
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