TWI592017B - Array imaging system and image sensor - Google Patents

Array imaging system and image sensor Download PDF

Info

Publication number
TWI592017B
TWI592017B TW104126693A TW104126693A TWI592017B TW I592017 B TWI592017 B TW I592017B TW 104126693 A TW104126693 A TW 104126693A TW 104126693 A TW104126693 A TW 104126693A TW I592017 B TWI592017 B TW I592017B
Authority
TW
Taiwan
Prior art keywords
pixel
sub
image
electrochromic
voltage signal
Prior art date
Application number
TW104126693A
Other languages
Chinese (zh)
Other versions
TW201620292A (en
Inventor
劉坤
郭先清
傅璟軍
Original Assignee
比亞迪股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 比亞迪股份有限公司 filed Critical 比亞迪股份有限公司
Publication of TW201620292A publication Critical patent/TW201620292A/en
Application granted granted Critical
Publication of TWI592017B publication Critical patent/TWI592017B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/75Circuitry for compensating brightness variation in the scene by influencing optical camera components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electroluminescent Light Sources (AREA)

Description

陣列成像系統及圖像感測器 Array imaging system and image sensor

本發明涉及圖像技術領域,尤其涉及一種陣列成像系統及圖像感測器。 The present invention relates to the field of image technologies, and in particular, to an array imaging system and an image sensor.

互補型金屬氧化物半導體(complementary metal-oxide semiconductor,CMOS)圖像感測器包括像素陣列、控制電路、類比前端處理電路、模數轉換(analog to digital,A/D)電路、圖像信號處理電路及相關儲存單元。由於CMOS技術的高集成度、高穩定性、低成本,基於CMOS圖像感測器的應用越來越廣泛,已經成為絕大多數視覺系統的首選。 A complementary metal-oxide semiconductor (CMOS) image sensor includes a pixel array, a control circuit, an analog front end processing circuit, an analog to digital (A/D) circuit, and image signal processing. Circuit and related storage unit. Due to the high integration, high stability and low cost of CMOS technology, CMOS image sensor-based applications are becoming more and more popular, and have become the first choice for most vision systems.

另外,CMOS圖像感測器也因具有寬動態範圍越來越受到重視。圖像感測器的動態範圍是指最大非飽和信號與在黑暗條件下雜訊的比值,這是圖像感測器品質的關鍵因素。CMOS圖像感測器的動態範圍只有大約60db,而被攝環境的動態範圍往往超過100db。這就造成CMOS圖像感測器拍攝的圖像對比度往往不夠。 In addition, CMOS image sensors are also receiving increasing attention due to their wide dynamic range. The dynamic range of the image sensor is the ratio of the maximum unsaturated signal to the noise in dark conditions, which is a key factor in the quality of the image sensor. The dynamic range of CMOS image sensors is only about 60db, while the dynamic range of the subject environment often exceeds 100db. This causes the contrast of the image taken by the CMOS image sensor to be insufficient.

目前提升CMOS圖像感測器的動態範圍的方法主要有:1,採用長短積分時間,CMOS圖像感測器的像素兩次或兩次以上,對獲得的兩次或兩次以上的像素資訊進行合成處理,實現寬動態。2,採用像素陣列兩級增益或多級增益實現圖像感測器的寬動態範圍。目前的技術為了達到高的動態範圍,需要對不同積分時間下的輸出信號進行儲存及處理,因此增加了 圖像感測器儲電路面積,影響圖像的輸出幀率等。另外,對多級增益的圖像信號進行處理,也會增加圖像感測器的儲存電路面積和影響圖像幀率等。 At present, there are mainly methods for improving the dynamic range of a CMOS image sensor: 1. Using a long and short integration time, the pixels of the CMOS image sensor are two or more times, and the obtained two or more pixel information. Perform synthetic processing to achieve wide dynamics. 2, the pixel array two-stage gain or multi-stage gain to achieve a wide dynamic range of the image sensor. In order to achieve a high dynamic range, current technologies require storage and processing of output signals at different integration times, thus increasing The image sensor stores the circuit area, affects the output frame rate of the image, and the like. In addition, processing the multi-level gain image signal also increases the storage circuit area of the image sensor and affects the image frame rate.

本發明旨在至少在一定程度上解決相關技術中的技術間題之一。為此,本發明的第一個目的在於提出一種陣列成像系統。 The present invention aims to solve at least one of the technical problems in the related art at least to some extent. To this end, a first object of the present invention is to propose an array imaging system.

本發明的第二個目的在於提出一種圖像感測器。 A second object of the present invention is to provide an image sensor.

本發明第一方面的實施例提出一種陣列成像系統,包括:基底、形成於基底上的像素陣列和控制器。形成於基底上的像素陣列的每個像素包括:圖像子像素、採集子像素和電致色變片。圖像子像素用於產生圖像信號。採集子像素臨近該圖像子像素設置,用於感測入射光的強度,並產生相應的電壓信號,該入射光的強度越大,電壓信號越高。電致色變片覆蓋該圖像子像素。控制器,與該像素陣列連接,用於控制該採集子像素產生該電壓信號,該電壓信號作用於該電致變色片以改變該電致變色片的透過率,使得透過該電致色變片的該入射光的強度發生相應的衰減,以獲取衰減後的光信號,該電壓信號越高,電致變色變片的透過率越低。該控制器還用於,控制該圖像子像素感測該光信號以及控制該圖像子像素生成該圖像信號。 An embodiment of the first aspect of the invention provides an array imaging system comprising: a substrate, a pixel array formed on the substrate, and a controller. Each pixel of the pixel array formed on the substrate includes: an image sub-pixel, a collection sub-pixel, and an electrochromic sheet. Image subpixels are used to generate image signals. The acquisition sub-pixel is disposed adjacent to the image sub-pixel for sensing the intensity of the incident light and generating a corresponding voltage signal, the greater the intensity of the incident light, the higher the voltage signal. An electrochromic patch covers the image subpixel. a controller, coupled to the pixel array, for controlling the collection sub-pixel to generate the voltage signal, the voltage signal acting on the electrochromic sheet to change the transmittance of the electrochromic sheet, so that the electrochromic sheet is transmitted through the electrochromic sheet The intensity of the incident light is correspondingly attenuated to obtain an attenuated optical signal. The higher the voltage signal, the lower the transmittance of the electrochromic film. The controller is further configured to control the image sub-pixel to sense the optical signal and control the image sub-pixel to generate the image signal.

根據本發明實施例的陣列成像系統,由採集子像素產生電壓信號,電壓信號直接作用於電致變色片以調節電致變色片的透過率,使得當入射光的強度較弱時電致色變片的透過率高,而當入射光的強度較強時電致變色片的透過率低,從而增加了圖像子像素積分時間段內所採集的入射光的光強變化的感應範圍。由於圖像子像素成像的動態範圍與入射光的光強變化的感應範圍一致,因此也增加了圖像的動態範圍。 According to the array imaging system of the embodiment of the invention, a voltage signal is generated by the collecting sub-pixel, and the voltage signal directly acts on the electrochromic sheet to adjust the transmittance of the electrochromic sheet, so that the electrochromic color is changed when the intensity of the incident light is weak. The transmittance of the sheet is high, and the transmittance of the electrochromic sheet is low when the intensity of the incident light is strong, thereby increasing the sensing range of the change in the intensity of the incident light collected during the integration period of the image sub-pixel. Since the dynamic range of image sub-pixel imaging is consistent with the sensing range of the incident light intensity variation, the dynamic range of the image is also increased.

在一些示例中,還包括:微透鏡和彩色濾鏡。該微透鏡設置在該圖像子像素和該採集子像素的頂部。該彩色濾鏡設置在該微透鏡的下方且覆蓋該圖像子像素或同時覆蓋該圖像子像素和採集子像素。 In some examples, it also includes: a microlens and a color filter. The microlens is disposed on top of the image sub-pixel and the collection sub-pixel. The color filter is disposed under the microlens and covers the image sub-pixel or covers both the image sub-pixel and the acquisition sub-pixel.

在一些示例中,該圖像子像素的尺寸大於該採樣子像素。 In some examples, the size of the image sub-pixel is greater than the sample sub-pixel.

在一些示例中,該電致色變片包括:透明導電層、電致變色層、電解質層和離子儲存層。 In some examples, the electrochromic sheet includes a transparent conductive layer, an electrochromic layer, an electrolyte layer, and an ion storage layer.

本發明第二方面的實施例提出一種圖像感測器,包括:行解碼電路、陣列成像系統、採樣電路、列解碼電路和模/數轉換器。陣列成像系統用於輸出圖像信號,該陣列成像系統包括:基底、形成於基底上的像素陣列和控制器。形成於基底上的像素陣列的每個像素包括:圖像子像素、採集子像素和電致色變片。圖像子像素用於產生圖像信號。採集子像素臨近該圖像子像素設置,用於感測入射光的強度,並產生相應的電壓信號,該入射光的強度越大,電壓信號越高。電致色變片覆蓋該圖像子像素。控制器,與該像素陣列連接,用於控制該採集子像素產生該電壓信號,該電壓信號作用於該電致色變片以改變該電致色變片的透過率,使得透過該電致色變片的該入射光的強度發生相應的衰減,以獲取衰減後的光信號,該電壓信號越高,電致色變片的透過率越低。該控制器還用於,控制該圖像子像素感測該光信號以及控制該圖像子像素生成該圖像信號。採樣電路,用於對該圖像信號進行採樣以獲取類比圖像信號。列解碼電路,用於輸出該類比圖像信號;模/數轉換器,用於將該類比圖像信號轉換為數位圖像信號。 An embodiment of the second aspect of the present invention provides an image sensor comprising: a row decoding circuit, an array imaging system, a sampling circuit, a column decoding circuit, and an analog to digital converter. An array imaging system is used to output an image signal, the array imaging system comprising: a substrate, a pixel array formed on the substrate, and a controller. Each pixel of the pixel array formed on the substrate includes: an image sub-pixel, a collection sub-pixel, and an electrochromic sheet. Image subpixels are used to generate image signals. The acquisition sub-pixel is disposed adjacent to the image sub-pixel for sensing the intensity of the incident light and generating a corresponding voltage signal, the greater the intensity of the incident light, the higher the voltage signal. An electrochromic patch covers the image subpixel. a controller, coupled to the pixel array, for controlling the collection sub-pixel to generate the voltage signal, the voltage signal is applied to the electrochromic sheet to change the transmittance of the electrochromic sheet, so that the electrochromic color is transmitted The intensity of the incident light of the variogram is correspondingly attenuated to obtain an attenuated optical signal, and the higher the voltage signal, the lower the transmittance of the electrochromic sheet. The controller is further configured to control the image sub-pixel to sense the optical signal and control the image sub-pixel to generate the image signal. A sampling circuit is configured to sample the image signal to obtain an analog image signal. a column decoding circuit for outputting the analog image signal; an analog/digital converter for converting the analog image signal into a digital image signal.

根據本發明實施例的圖像感測器,由採集子像素產生電壓信號,電壓信號直接作用於電致色變片以調節電致色變片的透過率,使得當入射光的強度較弱時電致色變片的透過率高,而當入射光的強度較強時電致色變片的透過率低,從而增加了圖像子像素積分時間段內所採集的入射光的 光強變化的感應範圍。由於圖像子像素成像的動態範圍與入射光的光強變化的感應範圍一致,因此也增加了圖像的動態範圍。在一些示例中,該每個像素還包括:微透鏡和彩色濾鏡。該微透鏡設置在該圖像子像素和該採集子像素的頂部。該彩色濾鏡設置在該微透鏡的下方且覆蓋該圖像子像素或同時覆蓋該圖像子像素和採集子像素。 According to the image sensor of the embodiment of the present invention, a voltage signal is generated by the collecting sub-pixel, and the voltage signal directly acts on the electrochromic film to adjust the transmittance of the electrochromic film, so that when the intensity of the incident light is weak The electrochromic film has a high transmittance, and when the intensity of the incident light is strong, the transmittance of the electrochromic film is low, thereby increasing the incident light collected during the image sub-pixel integration period. The sensing range of the change in light intensity. Since the dynamic range of image sub-pixel imaging is consistent with the sensing range of the incident light intensity variation, the dynamic range of the image is also increased. In some examples, each of the pixels further includes: a microlens and a color filter. The microlens is disposed on top of the image sub-pixel and the collection sub-pixel. The color filter is disposed under the microlens and covers the image sub-pixel or covers both the image sub-pixel and the acquisition sub-pixel.

在一些示例中,該圖像子像素的尺寸大於該採樣子像素。 In some examples, the size of the image sub-pixel is greater than the sample sub-pixel.

在一些示例中,該電致色變片包括:透明導電層、電致變色層、電解質層和離子儲存層。 In some examples, the electrochromic sheet includes a transparent conductive layer, an electrochromic layer, an electrolyte layer, and an ion storage layer.

本發明附加的方面和優點將在下面的描述中部分給出,部分將從下面的描述中變得明顯,或通過本發明的實踐瞭解到。 The additional aspects and advantages of the invention will be set forth in part in the description which follows.

ASP‧‧‧差分放大電路 ASP‧‧‧Differential Amplifier Circuit

10‧‧‧基底 10‧‧‧Base

20‧‧‧像素陣列 20‧‧‧pixel array

20a‧‧‧彩色濾鏡 20a‧‧‧Color filter

22‧‧‧圖像子像素 22‧‧‧Image subpixel

24‧‧‧採集子像素 24‧‧‧Collect subpixels

26‧‧‧電致色變片 26‧‧‧Electrochromic film

28‧‧‧微透鏡 28‧‧‧Microlens

30‧‧‧控制器 30‧‧‧ Controller

100‧‧‧陣列成像系統 100‧‧‧Array Imaging System

200‧‧‧圖像感測器 200‧‧‧Image sensor

202‧‧‧行解碼電路 202‧‧‧ line decoding circuit

204‧‧‧採樣電路 204‧‧‧Sampling circuit

206‧‧‧列解碼電路 206‧‧‧ column decoding circuit

208‧‧‧模/數轉換器 208‧‧•A/D converter

222、242‧‧‧重定管 222, 242‧‧ ‧ re-management

224、244‧‧‧傳輸門管 224, 244‧‧‧ transmission door tube

226‧‧‧源跟隨管 226‧‧‧Source follower

228、248‧‧‧光電二極體 228, 248‧‧ ‧ Photodiodes

246‧‧‧電壓跟隨管 246‧‧‧Voltage follower tube

第1圖是根據本發明一個實施例的陣列成像系統的結構框圖;第2圖是本發明一個實施例的像素陣列示意圖;第3圖是本發明另一個實施例的像素陣列示意圖;第4圖是第3圖的像素陣列的剖面結構示意圖;第5圖是本發明一個實施例的像素陣列的剖面結構示意圖;第6圖是本發明一個實施例的採集子像素的電路結構示意圖;第7圖是本發明一個實施例的圖像子像素的電路結構示意圖;第8圖是本發明一個實施例的電致色變片的結構示意圖;第9圖是本發明一個實施例的電致色變片的透過率曲線圖;第10圖是根據本發明一個實施例的圖像感測器的結構示意圖;和第11圖是本發明一個實施例的圖像感測器的示例圖。 1 is a structural block diagram of an array imaging system according to an embodiment of the present invention; FIG. 2 is a schematic diagram of a pixel array according to an embodiment of the present invention; and FIG. 3 is a schematic diagram of a pixel array according to another embodiment of the present invention; Figure 5 is a schematic cross-sectional view of a pixel array of Figure 3; Figure 5 is a schematic cross-sectional view of a pixel array according to an embodiment of the present invention; and Figure 6 is a schematic diagram of a circuit structure of a collection sub-pixel according to an embodiment of the present invention; The figure is a schematic diagram of the circuit structure of an image sub-pixel according to an embodiment of the present invention; FIG. 8 is a schematic structural view of an electrochromic film according to an embodiment of the present invention; and FIG. 9 is an electrochromic change according to an embodiment of the present invention. Transmittance graph of a sheet; Fig. 10 is a schematic structural view of an image sensor according to an embodiment of the present invention; and Fig. 11 is a view showing an example of an image sensor according to an embodiment of the present invention.

下面詳細描述本發明的實施例,該實施例的示例在附圖中示出,其中自始至終相同或類似的標號表示相同或類似的元件或具有相同或類似功能的元件。下面通過參考附圖描述的實施例是示例性的,旨在用於解釋本發明,而不能理解為對本發明的限制。 The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.

參照第1圖,本發明第一方面的實施例的陣列成像系統100包括基底10、形成於基底上的像素陣列20和控制器30。 Referring to FIG. 1, an array imaging system 100 of an embodiment of the first aspect of the present invention includes a substrate 10, a pixel array 20 formed on a substrate, and a controller 30.

每個像素包括圖像子像素22、採集子像素24和電致色變片26。圖像子像素22用於產生圖像信號。採集子像素24臨近圖像子像素22設置,用於感測入射光的強度,並產生電壓信號。入射光的強度越大,電壓信號越高。電致色變片26覆蓋圖像子像素22。控制器30與像素陣列20連接,用於控制採集子像素24在圖像子像素22採集信號之前,控制器30控制採集子像素24產生電壓信號,電壓信號作用於圖像子像素22中的電致色變片26以改變電致色變片26的透過率。電壓信號越高,電致色變片26的透過率就越低,使得透過電致色變片26的入射光的強度發生相應的衰減,以獲取衰減後的光信號。電致色變片26的透過率改變後,控制器30控制圖像子像素22在積分時間段內接收衰減後的光信號,圖像子像素22生成圖像信號。採集子像素24臨近圖像子像素22設置是為了保證採集子像素24中用於產生電壓信號的入射光的強度與圖像子像素22採集的入射光的強度一致。採集子像素24臨近圖像子像素22設置的排布結構可以如第2圖和第3圖所示。每個像素都包含兩種子像素,即圖像子像素22和採集子像素24。例如,11子像素和11’子像素組成一個紅色像素,其中11子像素為圖像子像素,11’子像素為採集子像素。 Each pixel includes an image sub-pixel 22, an acquisition sub-pixel 24, and an electrochromic sheet 26. Image sub-pixel 22 is used to generate an image signal. The acquisition sub-pixel 24 is disposed adjacent to the image sub-pixel 22 for sensing the intensity of the incident light and generating a voltage signal. The greater the intensity of the incident light, the higher the voltage signal. The electrochromic sheet 26 covers the image sub-pixels 22. The controller 30 is coupled to the pixel array 20 for controlling the acquisition sub-pixel 24 to control the acquisition sub-pixel 24 to generate a voltage signal, and the voltage signal acts on the image sub-pixel 22 before the image sub-pixel 22 acquires the signal. The color change sheet 26 is changed to change the transmittance of the electrochromic film 26. The higher the voltage signal, the lower the transmittance of the electrochromic sheet 26, so that the intensity of the incident light transmitted through the electrochromic sheet 26 is correspondingly attenuated to obtain the attenuated optical signal. After the transmittance of the electrochromic sheet 26 is changed, the controller 30 controls the image sub-pixel 22 to receive the attenuated optical signal during the integration period, and the image sub-pixel 22 generates an image signal. The collection sub-pixel 24 is disposed adjacent to the image sub-pixel 22 in order to ensure that the intensity of the incident light for generating the voltage signal in the acquisition sub-pixel 24 coincides with the intensity of the incident light collected by the image sub-pixel 22. The arrangement of the collection sub-pixels 24 adjacent to the image sub-pixels 22 can be as shown in FIGS. 2 and 3. Each pixel contains two sub-pixels, an image sub-pixel 22 and an acquisition sub-pixel 24. For example, 11 sub-pixels and 11' sub-pixels constitute one red pixel, wherein 11 sub-pixels are image sub-pixels, and 11' sub-pixels are acquisition sub-pixels.

進一步地,在本發明的一個實施例中,每個像素還包括:微透鏡28和彩色濾鏡20a。微透鏡28設置在圖像子像素22和採集子像素24的頂部。彩色濾鏡20a設置在微透鏡28的下方且覆蓋圖像子像素22或同時覆蓋圖像子像素22和採集子像素24。 Further, in an embodiment of the invention, each pixel further includes: a microlens 28 and a color filter 20a. The microlens 28 is disposed on top of the image sub-pixel 22 and the acquisition sub-pixel 24. The color filter 20a is disposed below the microlens 28 and covers the image sub-pixel 22 or both the image sub-pixel 22 and the acquisition sub-pixel 24.

在本發明的一個實施例中,基底10為矽基底。 In one embodiment of the invention, substrate 10 is a ruthenium substrate.

電致變色(electrochromic,EC)是一種光學性能可變換的變色,一般指材料在外電場或電流作用下發生可逆的色彩變化,直觀地表現為材料的顏色和透明度發生可逆變化的過程,這種變化是連續可調的,即材料的透過率、吸收率、反射率三者比例關係可調。本發明的實施例中可用到的變色材料,如三氧化鎢。採集子像素24產生的電壓信號施加給圖像子像素22中鑲嵌的電致色變片26中的透明電極上,以調節電致變色片的透過率。本發明的實施例中可用的透明電極如氧化銦錫,銀絲墨等。 Electrochromic (EC) is a kind of optical property changeable color change. It generally refers to the reversible color change of a material under the action of an external electric field or current. It is intuitively represented as a process in which the color and transparency of a material undergo a reversible change. It is continuously adjustable, that is, the ratio of the transmittance, absorption rate and reflectance of the material is adjustable. A color changing material such as tungsten trioxide available in the embodiments of the present invention. The voltage signal generated by the acquisition sub-pixel 24 is applied to the transparent electrode in the electrochromic sheet 26 embedded in the image sub-pixel 22 to adjust the transmittance of the electrochromic sheet. Transparent electrodes usable in the embodiments of the present invention are indium tin oxide, silver ink, and the like.

在本發明的一個實施例中,圖像子像素22的尺寸大於採樣子像素24。這種排布結構能顯著增大圖像子像素22的受光面積,提高圖像子像素22採集入射光的能力。如第3圖所示的像素陣列示意圖所示,取3*3的陣列為例。每個像素都包含兩種子像素,即圖像子像素22和採集子像素24。11子像素和11’子像素組成一個紅色像素,其中11子像素為圖像子像素,11’子像素為採集子像素。11’子像素產生電壓信號,入射光的強度越大,產生的電壓信號越高。22和22’組成一個綠色像素,其中子像素22為圖像子像素,22’為採集子像素。33子像素和33’子像素以及其他像素都是以此種方式組成。11的上方鑲嵌電致色變片26,11從基底10以上都為透明媒介。 In one embodiment of the invention, image sub-pixel 22 is larger in size than sample sub-pixel 24. This arrangement can significantly increase the light receiving area of the image sub-pixel 22 and improve the ability of the image sub-pixel 22 to collect incident light. As shown in the schematic diagram of the pixel array shown in FIG. 3, an array of 3*3 is taken as an example. Each pixel includes two sub-pixels, namely an image sub-pixel 22 and an acquisition sub-pixel 24. The 11-sub-pixel and the 11' sub-pixel constitute one red pixel, wherein 11 sub-pixels are image sub-pixels, and 11' sub-pixels are collected. Subpixel. The 11' sub-pixel generates a voltage signal, and the greater the intensity of the incident light, the higher the generated voltage signal. 22 and 22' constitute a green pixel, wherein sub-pixel 22 is an image sub-pixel and 22' is a collection sub-pixel. The 33 sub-pixels and the 33' sub-pixels and other pixels are all composed in this manner. Above the 11 is an inlaid electrochromic sheet 26, 11 which is a transparent medium from above the substrate 10.

第4圖是第3圖左上和右下的對角線的剖面圖。虛線框部分是子像素11和11’,A和A1、B和B1、C和C1分別是圖像子像素22和採集子像素24的光電二極體。在剖面第4圖中26為11子像素鑲嵌的電致色變片(電致色變 片還可以鑲嵌在11像素的微透鏡28中或彩色濾鏡20a中等),U、D分別為電致變色片26的透明電極。電致色變片26中U、D透明電極連接到第4圖中的採集子像素11’的電壓信號產生電路。11’子像素產生的電壓信號作用於11子像素中的電致色變片26。子像素22、22’及33、33’工作原理同11、11’相同。入射光的強度越大採集子像素24產生的電壓信號越高。282為圖像子像素22上方的微透鏡,284為採集子像素上方的微透鏡,20a為彩色濾鏡。 Figure 4 is a cross-sectional view of the diagonal line at the top left and bottom right of Figure 3. The dotted frame portion is the sub-pixels 11 and 11', and A and A1, B and B1, C and C1 are the photo sub-pixel 22 and the photodiode of the acquisition sub-pixel 24, respectively. In section 4 of the section, 26 is an 11-pixel inlaid electrochromic sheet (electrochromic change) The sheet may also be embedded in the 11-pixel microlens 28 or the color filter 20a, and U and D are the transparent electrodes of the electrochromic sheet 26, respectively. The U, D transparent electrodes of the electrochromic film 26 are connected to the voltage signal generating circuit of the collecting sub-pixel 11' in Fig. 4. The voltage signal generated by the 11' sub-pixel acts on the electrochromic sheet 26 in the 11 sub-pixels. The sub-pixels 22, 22' and 33, 33' operate in the same manner as 11, 11'. The greater the intensity of the incident light, the higher the voltage signal generated by the acquisition sub-pixel 24. 282 is a microlens above the image sub-pixel 22, 284 is a microlens above the acquisition sub-pixel, and 20a is a color filter.

特別地,在本發明的一個實施例中,如第5圖所示,在採集子像素24的上方設置有和圖像子像素22相同顏色的彩色濾鏡。採集子像素24上設置有彩色濾鏡時,採集子像素24感應的電壓信號的強度和色彩亮度成比例。 In particular, in one embodiment of the present invention, as shown in FIG. 5, a color filter of the same color as the image sub-pixel 22 is disposed above the collection sub-pixel 24. When the color filter is disposed on the acquisition sub-pixel 24, the intensity of the voltage signal induced by the acquisition sub-pixel 24 is proportional to the color brightness.

第6圖是採集子像素24的電路結構示意圖,242為重定管,244是傳輸門管,246是電壓跟隨管,248是光電二極體。採集子像素在第6圖中重定管242和傳輸門管244在RST重定信號的控制下重定後,光電二極體248採集入射光。採集到的入射光傳送至幅值擴散點fd。幅值擴散點fd在TX傳輸門信號的控制下產生輸出信號,即在Vddp和Out之間產生和入射光的強度成正例的電壓信號。即入射光的強度越大,則在Vddp和Out之間的電勢差就越大。在圖像子像素22積分時,將電壓信號直接加到電致色變片26的透明電極上。 Figure 6 is a schematic diagram of the circuit structure of the acquisition sub-pixel 24, 242 is a re-pipe, 244 is a transmission gate, 246 is a voltage follower, and 248 is a photodiode. Acquisition Sub-pixels In Figure 6, the re-nuclear tube 242 and the transmission gate tube 244 are reset under the control of the RST re-set signal, and the photodiode 248 collects incident light. The collected incident light is transmitted to the amplitude diffusion point fd. The amplitude spread point fd produces an output signal under the control of the TX transmission gate signal, that is, a voltage signal that is positive between the Vddp and Out and the intensity of the incident light. That is, the greater the intensity of the incident light, the greater the potential difference between Vddp and Out. When the image sub-pixel 22 is integrated, the voltage signal is applied directly to the transparent electrode of the electrochromic sheet 26.

第7圖是圖像子像素22的電路結構示意圖,222為重定管,224為傳輸門管,226是源跟隨管,228是光電二極體,22a為行選通管。圖像子像素22和採集子像素24的電路的區別是採集子像素24的輸出電壓直接載入到圖像子像素22的電致色變片26的透明電極上,而圖像子像素22的信號輸出到列採樣電路並最終用於影像處理。 Figure 7 is a schematic diagram of the circuit structure of the image sub-pixel 22, 222 is a re-ball, 224 is a transmission gate, 226 is a source follower, 228 is a photodiode, and 22a is a row strobe. The difference between the image sub-pixel 22 and the circuit for collecting the sub-pixel 24 is that the output voltage of the acquisition sub-pixel 24 is directly loaded onto the transparent electrode of the electrochromic sheet 26 of the image sub-pixel 22, while the image sub-pixel 22 The signal is output to the column sampling circuit and ultimately used for image processing.

在本發明的一個實施例中,如第8圖所示,電致色變片26包括:透明導電層、電致變色層、電解質層和離子儲存層。電致色變片26的透過率 越低,採集子像素24的電壓信號越高。電致色變片26的入射光的透過率的變化曲線如第9圖所示。 In one embodiment of the present invention, as shown in FIG. 8, the electrochromic sheet 26 includes a transparent conductive layer, an electrochromic layer, an electrolyte layer, and an ion storage layer. Transmittance of electrochromic sheet 26 The lower the frequency, the higher the voltage signal of the acquisition sub-pixel 24. The change curve of the transmittance of the incident light of the electrochromic film 26 is as shown in Fig. 9.

根據本發明實施例的陣列成像系統,由採集子像素產生電壓信號,電壓信號直接作用於電致色變片以調節電致色變片的透過率,使得當入射光的強度較弱時電致色變片的透過率高,而當入射光的強度較強時電致色變片的透過率低,從而增加了圖像子像素積分時間段內所採集的入射光的光強變化的感應範圍。由於圖像子像素成像的動態範圍與入射光的光強變化的感應範圍一致,因此也增加了圖像的動態範圍。 According to the array imaging system of the embodiment of the invention, a voltage signal is generated by the collecting sub-pixel, and the voltage signal directly acts on the electrochromic film to adjust the transmittance of the electrochromic film, so that when the intensity of the incident light is weak, the signal is electrically The color change film has a high transmittance, and when the intensity of the incident light is strong, the transmittance of the electrochromic film is low, thereby increasing the sensing range of the light intensity variation of the incident light collected during the image sub-pixel integration period. . Since the dynamic range of image sub-pixel imaging is consistent with the sensing range of the incident light intensity variation, the dynamic range of the image is also increased.

本發明第二方面的實施例中提出一種圖像感測器200,如第10圖所示,包括:行解碼電路202、陣列成像系統100、採樣電路204、列解碼電路206和模/數轉換器208。 An embodiment of the second aspect of the present invention provides an image sensor 200, as shown in FIG. 10, comprising: a row decoding circuit 202, an array imaging system 100, a sampling circuit 204, a column decoding circuit 206, and an analog to digital conversion. 208.

行解碼電路202用於採集入射光。陣列成像系統100用於輸出圖像信號。採樣電路用於將陣列成像系統100輸出的圖像信號轉換為類比圖像信號。列解碼電路206用於輸出採樣電路204輸出的類比圖像信號。模/數轉換器208用於將經差分放大電路ASP放大後的類比圖像信號轉換為數位圖像信號。 The line decoding circuit 202 is for collecting incident light. The array imaging system 100 is for outputting image signals. A sampling circuit is used to convert the image signal output by the array imaging system 100 into an analog image signal. The column decoding circuit 206 is for outputting an analog image signal output from the sampling circuit 204. The analog/digital converter 208 is for converting the analog image signal amplified by the differential amplifying circuit ASP into a digital image signal.

陣列成像系統100包括:基底10、形成於基底上的像素陣列20和控制器30。 The array imaging system 100 includes a substrate 10, a pixel array 20 formed on a substrate, and a controller 30.

每個像素包括圖像子像素22、採集子像素24和電致色變片26。圖像子像素22用於產生圖像信號。採集子像素24臨近圖像子像素22設置,用於感測入射光的強度,並產生電壓信號。入射光的強度越大,電壓信號越高。電致色變片26覆蓋圖像子像素22。控制器30與像素陣列20連接,用於控制採集子像素24在圖像子像素22採集信號之前,控制器30控制採集子像素24產生電壓信號,電壓信號作用於圖像子像素22中的電致色變片26以改 變電致色變片26的透過率。電壓信號越高,電致色變片26的透過率就越低,使得透過電致色變片26的入射光的強度發生相應的衰減以獲取衰減後的光信號。電致色變片26的透過率改變後,控制器30控制圖像子像素22在積分時間段內接收衰減後的光信號,圖像子像素22生成圖像信號。採集子像素24臨近圖像子像素22設置是為了保證採集子像素24中用於產生電壓信號的入射光的強度與圖像子像素22採集的入射光的強度一致。採集子像素24臨近圖像子像素22設置的排布結構可以如第2圖和第3圖所示。每個像素都包含兩種子像素,即圖像子像素22和採集子像素24。例如,11子像素和11’子像素組成一個紅色像素,其中11子像素為圖像子像素,11’子像素為採集子像素。 Each pixel includes an image sub-pixel 22, an acquisition sub-pixel 24, and an electrochromic sheet 26. Image sub-pixel 22 is used to generate an image signal. The acquisition sub-pixel 24 is disposed adjacent to the image sub-pixel 22 for sensing the intensity of the incident light and generating a voltage signal. The greater the intensity of the incident light, the higher the voltage signal. The electrochromic sheet 26 covers the image sub-pixels 22. The controller 30 is coupled to the pixel array 20 for controlling the acquisition sub-pixel 24 to control the acquisition sub-pixel 24 to generate a voltage signal, and the voltage signal acts on the image sub-pixel 22 before the image sub-pixel 22 acquires the signal. Color change film 26 to change The transmittance of the electrochromic sheet 26 is changed. The higher the voltage signal, the lower the transmittance of the electrochromic sheet 26, so that the intensity of the incident light transmitted through the electrochromic sheet 26 is correspondingly attenuated to obtain the attenuated optical signal. After the transmittance of the electrochromic sheet 26 is changed, the controller 30 controls the image sub-pixel 22 to receive the attenuated optical signal during the integration period, and the image sub-pixel 22 generates an image signal. The collection sub-pixel 24 is disposed adjacent to the image sub-pixel 22 in order to ensure that the intensity of the incident light for generating the voltage signal in the acquisition sub-pixel 24 coincides with the intensity of the incident light collected by the image sub-pixel 22. The arrangement of the collection sub-pixels 24 adjacent to the image sub-pixels 22 can be as shown in FIGS. 2 and 3. Each pixel contains two sub-pixels, an image sub-pixel 22 and an acquisition sub-pixel 24. For example, 11 sub-pixels and 11' sub-pixels constitute one red pixel, wherein 11 sub-pixels are image sub-pixels, and 11' sub-pixels are acquisition sub-pixels.

進一步地,在本發明的一個實施例中,每個像素還包括:微透鏡28和彩色濾鏡20a。微透鏡28設置在圖像子像素22和採集子像素24的頂部。彩色濾鏡20a設置在微透鏡28的下方且覆蓋圖像子像素22或同時覆蓋圖像子像素22和採集子像素24。 Further, in an embodiment of the invention, each pixel further includes: a microlens 28 and a color filter 20a. The microlens 28 is disposed on top of the image sub-pixel 22 and the acquisition sub-pixel 24. The color filter 20a is disposed below the microlens 28 and covers the image sub-pixel 22 or both the image sub-pixel 22 and the acquisition sub-pixel 24.

在本發明的一個實施例中,基底10為矽基底。 In one embodiment of the invention, substrate 10 is a ruthenium substrate.

電致變色(electrochromic,EC)是一種光學性能可變換的變色,一般指材料在外電場或電流作用下發生可逆的色彩變化,直觀地表現為材料的顏色和透明度發生可逆變化的過程,這種變化是連續可調的,即材料的透過率、吸收率、反射率三者比例關係可調。本發明的實施例中可用到的變色材料,如三氧化鎢。採集子像素24產生的電壓信號施加給圖像子像素22中鑲嵌的電致色變片26中的透明電極上,以調節電致色變片的透過率。本發明的實施例中可用的透明電極如氧化銦錫,銀絲墨等。 Electrochromic (EC) is a kind of optical property changeable color change. It generally refers to the reversible color change of a material under the action of an external electric field or current. It is intuitively represented as a process in which the color and transparency of a material undergo a reversible change. It is continuously adjustable, that is, the ratio of the transmittance, absorption rate and reflectance of the material is adjustable. A color changing material such as tungsten trioxide available in the embodiments of the present invention. The voltage signal generated by the acquisition sub-pixel 24 is applied to the transparent electrode in the electrochromic sheet 26 embedded in the image sub-pixel 22 to adjust the transmittance of the electrochromic sheet. Transparent electrodes usable in the embodiments of the present invention are indium tin oxide, silver ink, and the like.

在本發明的一個實施例中,圖像子像素22的尺寸大於採樣子像素24。這種排布結構能顯著增大圖像子像素22的受光面積,提高圖像子像素 22採集入射光的能力。如第3圖所示的像素陣列示意圖所示,取3*3的陣列為例。每個像素都包含兩種子像素,即圖像子像素22和採集子像素24。11子像素和11’子像素組成一個紅色像素,其中11子像素為圖像子像素,11’子像素為採集子像素。11’子像素產生電壓信號,入射光的強度越大,產生的電壓信號越高。22和22’組成一個綠色像素,其中子像素22為圖像子像素,22’為採集子像素。33子像素和33’子像素以及其他像素都是以此種方式組成。11的上方鑲嵌電致色變片26,11從基底10以上都為透明媒介。 In one embodiment of the invention, image sub-pixel 22 is larger in size than sample sub-pixel 24. This arrangement can significantly increase the light receiving area of the image sub-pixel 22 and improve the image sub-pixel. 22 The ability to collect incident light. As shown in the schematic diagram of the pixel array shown in FIG. 3, an array of 3*3 is taken as an example. Each pixel includes two sub-pixels, namely an image sub-pixel 22 and an acquisition sub-pixel 24. The 11-sub-pixel and the 11' sub-pixel constitute one red pixel, wherein 11 sub-pixels are image sub-pixels, and 11' sub-pixels are collected. Subpixel. The 11' sub-pixel generates a voltage signal, and the greater the intensity of the incident light, the higher the generated voltage signal. 22 and 22' constitute a green pixel, wherein sub-pixel 22 is an image sub-pixel and 22' is a collection sub-pixel. The 33 sub-pixels and the 33' sub-pixels and other pixels are all composed in this manner. Above the 11 is an inlaid electrochromic sheet 26, 11 which is a transparent medium from above the substrate 10.

第4圖是第3圖左上和右下的對角線的剖面圖。虛線框部分是子像素11和11’,A和A1、B和B1、C和C1分別是圖像子像素22和採集子像素24的光電二極體。在剖面第4圖中26為11子像素鑲嵌的電致色變片(電致色變片還可以鑲嵌在11像素的微透鏡28中或彩色濾鏡20a中等),U、D分別為電致變色片26的透明電極。電致變色片26中U、D透明電極連接到第4圖中的採集子像素11’的電壓信號產生電路。11’子像素產生的電壓信號作用於11子像素中的電致色變片26。子像素22、22’及33、33’工作原理同11、11’相同。入射光的強度越大採集子像素24產生的電壓信號越高。282為圖像子像素22上方的微透鏡,284為採集子像素上方的微透鏡,20a為彩色濾鏡。 Figure 4 is a cross-sectional view of the diagonal line at the top left and bottom right of Figure 3. The dotted frame portion is the sub-pixels 11 and 11', and A and A1, B and B1, C and C1 are the photo sub-pixel 22 and the photodiode of the acquisition sub-pixel 24, respectively. In section 4 of the section, 26 is an 11-pixel inlaid electrochromic sheet (the electrochromic sheet can also be embedded in the 11-pixel microlens 28 or the color filter 20a), and U and D are respectively electro-induced. The transparent electrode of the color changing sheet 26. The U, D transparent electrodes of the electrochromic sheet 26 are connected to the voltage signal generating circuit of the collecting sub-pixel 11' in Fig. 4. The voltage signal generated by the 11' sub-pixel acts on the electrochromic sheet 26 in the 11 sub-pixels. The sub-pixels 22, 22' and 33, 33' operate in the same manner as 11, 11'. The greater the intensity of the incident light, the higher the voltage signal generated by the acquisition sub-pixel 24. 282 is a microlens above the image sub-pixel 22, 284 is a microlens above the acquisition sub-pixel, and 20a is a color filter.

特別地,在本發明的一個實施例中,如第5圖所示,在採集子像素24的上方設置有和圖像子像素22相同顏色的彩色濾鏡。採集子像素24上設置有彩色濾鏡時,採集子像素24感應的電壓信號的強度和色彩亮度成比例。 In particular, in one embodiment of the present invention, as shown in FIG. 5, a color filter of the same color as the image sub-pixel 22 is disposed above the collection sub-pixel 24. When the color filter is disposed on the acquisition sub-pixel 24, the intensity of the voltage signal induced by the acquisition sub-pixel 24 is proportional to the color brightness.

第6圖是採集子像素24的電路結構示意圖,242為重定管,244是傳輸門管,246是電壓跟隨管,248是光電二極體。採集子像素在第6圖中重定管242和傳輸門管244在RST重定信號的控制下重定後,光電二極體248採集入射光。採集到的入射光傳送至幅值擴散點fd。幅值擴散點fd在TX傳輸門信號的控制下產生輸出信號,即在Vddp和Out之間產生和入射光的強度成 正例的電壓信號。即入射光的強度越大,則在Vddp和Out之間的電勢差就越大。在圖像子像素22積分時,將電壓信號直接加到電致色變片26的透明電極上。 Figure 6 is a schematic diagram of the circuit structure of the acquisition sub-pixel 24, 242 is a re-pipe, 244 is a transmission gate, 246 is a voltage follower, and 248 is a photodiode. Acquisition Sub-pixels In Figure 6, the re-nuclear tube 242 and the transmission gate tube 244 are reset under the control of the RST re-set signal, and the photodiode 248 collects incident light. The collected incident light is transmitted to the amplitude diffusion point fd. The amplitude spread point fd produces an output signal under the control of the TX transmission gate signal, that is, the intensity of the generated light between Vddp and Out is Positive voltage signal. That is, the greater the intensity of the incident light, the greater the potential difference between Vddp and Out. When the image sub-pixel 22 is integrated, the voltage signal is applied directly to the transparent electrode of the electrochromic sheet 26.

第7圖是圖像子像素22的電路結構示意圖,222為重定管,224為傳輸門管,226是源跟隨管,228是光電二極體,22a為行選通管。圖像子像素22和採集子像素24的電路的最大區別是採集子像素24的輸出電壓直接載入到圖像子像素22的電致色變片26的透明電極上,而圖像子像素22的信號輸出到列採樣電路並最終用於影像處理。 Figure 7 is a schematic diagram of the circuit structure of the image sub-pixel 22, 222 is a re-ball, 224 is a transmission gate, 226 is a source follower, 228 is a photodiode, and 22a is a row strobe. The biggest difference between the image sub-pixel 22 and the circuit for collecting the sub-pixel 24 is that the output voltage of the acquisition sub-pixel 24 is directly loaded onto the transparent electrode of the electrochromic sheet 26 of the image sub-pixel 22, while the image sub-pixel 22 The signal is output to the column sampling circuit and ultimately used for image processing.

在本發明的一個實施例中,如第8圖所示,電致色變片26包括:透明導電層、電致變色層、電解質層和離子儲存層。電致色變片26的透過率越低,採集子像素24的電壓信號越高。電致色變片26的入射光的透過率的變化曲線如第9圖所示。 In one embodiment of the present invention, as shown in FIG. 8, the electrochromic sheet 26 includes a transparent conductive layer, an electrochromic layer, an electrolyte layer, and an ion storage layer. The lower the transmittance of the electrochromic film 26, the higher the voltage signal of the acquisition sub-pixel 24. The change curve of the transmittance of the incident light of the electrochromic film 26 is as shown in Fig. 9.

此外,如第11圖所示,圖像感測器200的陣列成像系統100的像素陣列中的圖像子像素22的光電轉換及採集子像素24感應電壓信號的生成是由行解碼器202控制,而圖像子像素22的輸出通過採樣電路204、列解碼電路206控制。由行解碼電路202和列解碼電路206選擇要讀出的像素,輸出圖像信號至採樣(CDS)電路,消除固定模式雜訊(FPN),然後經過差分放大電路(ASP)放大後順序地進入模數轉換器(ADC)208中完成模數轉換。 Furthermore, as shown in FIG. 11, the photoelectric conversion of the image sub-pixels 22 in the pixel array of the array imaging system 100 of the image sensor 200 and the generation of the induced sub-pixel 24 induced voltage signals are controlled by the row decoder 202. The output of the image sub-pixel 22 is controlled by the sampling circuit 204 and the column decoding circuit 206. The pixel to be read is selected by the row decoding circuit 202 and the column decoding circuit 206, and the image signal is output to a sampling (CDS) circuit to eliminate fixed mode noise (FPN), and then sequentially amplified by a differential amplification circuit (ASP). Analog to digital conversion is accomplished in an analog to digital converter (ADC) 208.

另外,根據本發明實施例的圖像感測器200的其他構成及作用對於本領域的技術人員而言都是已知的,在此處不做贅述。 In addition, other configurations and functions of the image sensor 200 according to the embodiment of the present invention are known to those skilled in the art, and are not described herein.

根據本發明實施例的圖像感測器,由採集子像素產生與入射光的強度成正比的電壓信號,調節電致色變片的透過率,使得當光強較弱時電致變色片的透過率很高,而當光很強時電致色變片的透過率大大降低,從而增加了圖像子像素積分時間段內所採集的入射光的光強變化的感應範 圍。由於圖像子像素成像的動態範圍與入射光的光強變化的感應範圍一致,因此也增加了圖像的動態範圍。 According to the image sensor of the embodiment of the present invention, a voltage signal proportional to the intensity of the incident light is generated by the collecting sub-pixel, and the transmittance of the electrochromic film is adjusted so that the electrochromic sheet is weak when the light intensity is weak. The transmittance is very high, and when the light is strong, the transmittance of the electrochromic film is greatly reduced, thereby increasing the sensing range of the intensity variation of the incident light collected during the image sub-pixel integration period. Wai. Since the dynamic range of image sub-pixel imaging is consistent with the sensing range of the incident light intensity variation, the dynamic range of the image is also increased.

在本發明的描述中,需要理解的是,術語“中心”、“縱向”、“橫向”、“長度”、“寬度”、“厚度”、“上”、“下”、“前”、“後”、“左”、“右”、“豎直”、“水準”、“頂”、“底”“內”、“外”、“順時針”、“逆時針”、“軸向”、“徑向”、“周向”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。 In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " After, "Left", "Right", "Vertical", "Level", "Top", "Bottom", "Inside", "Outside", "Clockwise", "Counterclockwise", "Axial", The orientation or positional relationship of the "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplified description, and does not indicate or imply the indicated device or component. It must be constructed and operated in a particular orientation, and is not to be construed as limiting the invention.

此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括至少一個該特徵。在本發明的描述中,“多個”的含義是至少兩個,例如兩個,三個等,除非另有明確具體的限定。 Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" or "second" may include at least one of the features, either explicitly or implicitly. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless specifically defined otherwise.

在本發明中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係,除非另有明確的限定。對於本領域的普通技術人員而言,可以根據具體情況理解上述術語在本發明中的具體含義。 In the present invention, the terms "installation", "connected", "connected", "fixed" and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or integrated; can be mechanical or electrical connection; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction of two elements, unless otherwise specified Limited. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.

在本發明中,除非另有明確的規定和限定,第一特徵在第二特徵“上”或“下”可以是第一和第二特徵直接接觸,或第一和第二特徵通過中間媒介間接接觸。而且,第一特徵在第二特徵“之上”、“上方”和“上面”可是第一特徵在第二特徵正上方或斜上方,或僅僅表示第一特徵水準 高度高於第二特徵。第一特徵在第二特徵“之下”、“下方”和“下面”可以是第一特徵在第二特徵正下方或斜下方,或僅僅表示第一特徵水準高度小於第二特徵。 In the present invention, the first feature "on" or "under" the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact. Moreover, the first feature "above", "above" and "above" the second feature may be that the first feature is directly above or above the second feature, or merely represents the first feature level The height is higher than the second feature. The first feature "below", "below" and "below" the second feature may be that the first feature is directly below or below the second feature, or merely that the first feature level is less than the second feature.

在本說明書的描述中,參考術語“一個實施例”、“一些實施例”、“示例”、“具體示例”、或“一些示例”等的描述意指結合該實施例或示例描述的具體特徵、結構、材料或者特點包含於本發明的至少一個實施例或示例中。在本說明書中,對上述術語的示意性表述不必須針對的是相同的實施例或示例。而且,描述的具體特徵、結構、材料或者特點可以在任一個或多個實施例或示例中以合適的方式結合。此外,在不相互矛盾的情況下,本領域的技術人員可以將本說明書中描述的不同實施例或示例以及不同實施例或示例的特徵進行結合和組合。 In the description of the present specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means a specific feature described in connection with the embodiment or example. A structure, material or feature is included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms is not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, various embodiments or examples described in the specification, as well as features of various embodiments or examples, may be combined and combined.

儘管上面已經示出和描述了本發明的實施例,可以理解的是,上述實施例是示例性的,不能理解為對本發明的限制,本領域的普通技術人員在本發明的範圍內可以對上述實施例進行變化、修改、替換和變型。 Although the embodiments of the present invention have been shown and described, it is understood that the above-described embodiments are illustrative and are not to be construed as limiting the scope of the invention. The embodiments are subject to variations, modifications, substitutions and variations.

10‧‧‧基底 10‧‧‧Base

20‧‧‧像素陣列 20‧‧‧pixel array

20a‧‧‧彩色濾鏡 20a‧‧‧Color filter

22‧‧‧圖像子像素 22‧‧‧Image subpixel

24‧‧‧採集子像素 24‧‧‧Collect subpixels

26‧‧‧電致色變片 26‧‧‧Electrochromic film

28‧‧‧微透鏡 28‧‧‧Microlens

30‧‧‧控制器 30‧‧‧ Controller

100‧‧‧陣列成像系統 100‧‧‧Array Imaging System

Claims (6)

一種陣列成像系統,包括:基底;形成於基底上的像素陣列,每個像素包括:圖像子像素,用於產生圖像信號;採集子像素,臨近該圖像子像素設置,用於感測入射光的強度,並依據入射光強度產生相應的電壓信號,該入射光的強度越大,電壓信號越高,其中該圖像子像素的尺寸大於該採樣子像素;及電致色變片,覆蓋該圖像子像素;及控制器,與該像素陣列連接,用於控制該採集子像素產生該電壓信號,該電壓信號作用於該電致色變片以改變該電致色變片的透過率,使得透過該電致色變片的入射光的強度發生相應的衰減,以獲取衰減後的光信號,該電壓信號越高,電致色變片的透過率越低;該控制器還用於,控制該圖像子像素感測該衰減後的光信號以及控制該圖像子像素產生該圖像信號。 An array imaging system includes: a substrate; an array of pixels formed on the substrate, each pixel comprising: an image sub-pixel for generating an image signal; and a collection sub-pixel adjacent to the image sub-pixel setting for sensing The intensity of the incident light, and according to the intensity of the incident light, a corresponding voltage signal is generated. The greater the intensity of the incident light, the higher the voltage signal, wherein the size of the image sub-pixel is larger than the sampling sub-pixel; and the electrochromic film, Covering the image sub-pixel; and a controller coupled to the pixel array for controlling the collection sub-pixel to generate the voltage signal, the voltage signal acting on the electrochromic sheet to change the transmission of the electrochromic sheet The rate is such that the intensity of the incident light transmitted through the electrochromic film is correspondingly attenuated to obtain the attenuated optical signal. The higher the voltage signal, the lower the transmittance of the electrochromic film; the controller also uses And controlling the image sub-pixel to sense the attenuated optical signal and controlling the image sub-pixel to generate the image signal. 如申請專利範圍第1項所述該的陣列成像系統,其中,該每個像素還包括:微透鏡,該微透鏡設置在該圖像子像素和該採集子像素的頂部;及彩色濾鏡,該彩色濾鏡設置在該微透鏡的下方且覆蓋該圖像子像素或同時覆蓋該圖像子像素和採集子像素。 The array imaging system of claim 1, wherein each of the pixels further comprises: a microlens disposed on the top of the image sub-pixel and the collection sub-pixel; and a color filter, The color filter is disposed under the microlens and covers the image sub-pixel or covers both the image sub-pixel and the acquisition sub-pixel. 如申請專利範圍第1項所述的陣列成像系統,其中,該電致色變片包括:透明導電層、電致變色層、電解質層和離子儲存層。 The array imaging system of claim 1, wherein the electrochromic sheet comprises: a transparent conductive layer, an electrochromic layer, an electrolyte layer, and an ion storage layer. 一種圖像感測器,包括:行解碼電路; 陣列成像系統,用於輸出圖像信號,該陣列成像系統包括:基底;形成於基底上的像素陣列,每個像素包括:圖像子像素,用於產生圖像信號;採集子像素,臨近該圖像子像素設置,用於感測入射光的強度,並依據入射光強度產生相應的電壓信號,該入射光的強度越大,電壓信號越高,其中該圖像子像素的尺寸大於該採樣子像素;及電致色變片,覆蓋該圖像子像素;及控制器,與該像素陣列連接,用於控制該採集子像素產生該電壓信號,該電壓信號作用於該電致色變片以改變該電致色變片的透過率,使得透過該電致色變片的入射光的強度發生相應的衰減,以獲取衰減後的光信號,該電壓信號越高,電致色變片的透過率越低;該控制器還用於,控制該圖像子像素感測該光信號以及控制該圖像子像素生成該圖像信號;採樣電路,用於對該圖像信號進行採樣以獲取類比圖像信號;列解碼電路,用於輸出該類比圖像信號;及模/數轉換器,用於將該類比圖像信號轉換為數位圖像信號。 An image sensor comprising: a line decoding circuit; An array imaging system for outputting an image signal, the array imaging system comprising: a substrate; an array of pixels formed on the substrate, each pixel comprising: image sub-pixels for generating image signals; collecting sub-pixels adjacent to the The image sub-pixel is configured to sense the intensity of the incident light and generate a corresponding voltage signal according to the incident light intensity. The greater the intensity of the incident light, the higher the voltage signal, wherein the size of the image sub-pixel is larger than the sampling. a sub-pixel; and an electrochromic film covering the image sub-pixel; and a controller coupled to the pixel array for controlling the collection sub-pixel to generate the voltage signal, the voltage signal acting on the electrochromic film In order to change the transmittance of the electrochromic sheet, the intensity of the incident light transmitted through the electrochromic sheet is correspondingly attenuated to obtain an attenuated optical signal, and the higher the voltage signal, the electrochromic sheet The lower the transmittance; the controller is further configured to control the image sub-pixel to sense the optical signal and control the image sub-pixel to generate the image signal; and the sampling circuit is configured to perform the image signal Analog image signal to obtain samples; a column decoder circuit for outputting an image signal such ratio; and an analog / digital converter for converting the analog image signals are digital image signals. 如申請專利範圍第4項所述的圖像感測器,其中,該每個像素還包括:微透鏡,該微透鏡設置在該圖像子像素和該採集子像素的頂部;彩色濾鏡,該彩色濾鏡設置在該微透鏡的下方且覆蓋該圖像子像素或同時覆蓋該圖像子像素和採集子像素。 The image sensor of claim 4, wherein each of the pixels further comprises: a microlens disposed on the top of the image sub-pixel and the collection sub-pixel; a color filter, The color filter is disposed under the microlens and covers the image sub-pixel or covers both the image sub-pixel and the acquisition sub-pixel. 如申請專利範圍第4項所述的圖像感測器,其中,該電致色變片包括:透明導電層、電致變色層、電解質層和離子儲存層。 The image sensor of claim 4, wherein the electrochromic sheet comprises: a transparent conductive layer, an electrochromic layer, an electrolyte layer, and an ion storage layer.
TW104126693A 2014-11-21 2015-08-17 Array imaging system and image sensor TWI592017B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410670290.0A CN105681771A (en) 2014-11-21 2014-11-21 Array imaging system and image sensor

Publications (2)

Publication Number Publication Date
TW201620292A TW201620292A (en) 2016-06-01
TWI592017B true TWI592017B (en) 2017-07-11

Family

ID=56013313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104126693A TWI592017B (en) 2014-11-21 2015-08-17 Array imaging system and image sensor

Country Status (3)

Country Link
CN (1) CN105681771A (en)
TW (1) TWI592017B (en)
WO (1) WO2016078617A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9994091B2 (en) * 2016-08-12 2018-06-12 GM Global Technology Operations LLC Window system for a passenger compartment of a vehicle
CN107919373B (en) * 2017-11-07 2019-03-12 德淮半导体有限公司 Back side illumination image sensor
CN108091664A (en) * 2017-12-13 2018-05-29 德淮半导体有限公司 Sensitive pixel elements, imaging sensor and manufacturing method
CN110518029A (en) * 2019-09-23 2019-11-29 德淮半导体有限公司 Imaging sensor and preparation method thereof
CN110830697A (en) * 2019-11-27 2020-02-21 Oppo广东移动通信有限公司 Control method, electronic device, and storage medium
CN111193880B (en) * 2020-01-13 2022-05-24 刘元哲 Image sensor, optical filter and image sensor brightness adjusting method
CN113949818A (en) * 2020-07-17 2022-01-18 深圳市万普拉斯科技有限公司 Pixel structure and exposure method thereof
CN114070968B (en) * 2020-08-06 2024-02-02 深圳市万普拉斯科技有限公司 Pixel structure unit, lens module, electronic equipment and shadow elimination method
CN115022520A (en) * 2022-07-07 2022-09-06 维沃移动通信有限公司 Camera module, electronic equipment, control method and control device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216701A (en) * 2010-03-31 2011-10-27 Sony Corp Solid-state imaging apparatus and electronic device
JP5585339B2 (en) * 2010-07-30 2014-09-10 ソニー株式会社 Solid-state imaging device, driving method thereof, and electronic apparatus
US8618588B2 (en) * 2010-10-29 2013-12-31 International Business Machines Corporation Anti-blooming pixel sensor cell with active neutral density filter, methods of manufacture, and design structure
CN102497517B (en) * 2011-11-25 2013-09-11 吉林大学 Low-operating voltage wide dynamic range image sensor
JP6198235B2 (en) * 2012-06-11 2017-09-20 ソニーセミコンダクタソリューションズ株式会社 Imaging device
CN103515397A (en) * 2012-06-18 2014-01-15 联咏科技股份有限公司 An image sensing device with pixel level automatic optical attenuators
CN103442185B (en) * 2013-09-02 2018-06-22 上海集成电路研发中心有限公司 A kind of CMOS image pixel array

Also Published As

Publication number Publication date
CN105681771A (en) 2016-06-15
WO2016078617A1 (en) 2016-05-26
TW201620292A (en) 2016-06-01

Similar Documents

Publication Publication Date Title
TWI592017B (en) Array imaging system and image sensor
JP5585339B2 (en) Solid-state imaging device, driving method thereof, and electronic apparatus
US20220123053A1 (en) Solid-state imaging apparatus and electronic apparatus
JP6639385B2 (en) Reset image sensor with split gate condition
US8754968B2 (en) Solid-state imaging device and electronic equipment
JP6785429B2 (en) Imaging device
CN109951660B (en) Pixel structure, CMOS image sensor, image signal processor and terminal
JP6157630B2 (en) Structure of CMOS active pixel
EP2140676B1 (en) Image sensor pixel with gain control
TWI797629B (en) High dynamic range cmos image sensor design
TWI578788B (en) Image sensor pixel cell with non-destructive readout
US10277838B2 (en) Monolithic visible/IR fused low light level imaging sensor
TW201417254A (en) Pixel element of wide dynamic range, its manufacturing method, and image sensor formed thereby
JP2015173393A (en) Imaging device and electronic apparatus
JP2005303273A (en) Photoelectric conversion film stacked solid-state image sensor
US20110193188A1 (en) Image sensor
Ihama et al. Proposal of new organic CMOS image sensor for reduction in pixel size
KR20130006126A (en) Image sensor, image processing apparatus including the same, and interpolation method of the image processing apparatus
CN110534534A (en) Imaging sensor with irregular design structure dual conversion gain transistor
KR20170048800A (en) Structure for a 3-Transistor Active Pixel Sensor with Wide Dynamic Range
KR20090043740A (en) Cmos image sensor