CN110518029A - Imaging sensor and preparation method thereof - Google Patents
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- CN110518029A CN110518029A CN201910897227.3A CN201910897227A CN110518029A CN 110518029 A CN110518029 A CN 110518029A CN 201910897227 A CN201910897227 A CN 201910897227A CN 110518029 A CN110518029 A CN 110518029A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 58
- 230000008859 change Effects 0.000 claims abstract description 18
- 230000004044 response Effects 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 238000012937 correction Methods 0.000 claims description 17
- 238000001914 filtration Methods 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000007812 deficiency Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 229920000123 polythiophene Chemical class 0.000 description 1
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- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical class [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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Abstract
This disclosure relates to a kind of imaging sensor and preparation method thereof.Imaging sensor includes: multiple sensor pixels, and each sensor pixel includes one or more sub-pixels, and at least partly sensor pixel, the sub-pixel of sensor pixel includes the first sub-pixel, and the first sub-pixel includes the first filter layer comprising electrochromic material；And control circuit, control circuit are configured as applying electrical bias to the first filter layer；Wherein, the color and/or transparency of the first filter layer change in response to the electrical bias that is applied.
Description
Technical field
This disclosure relates to image sensing technical field, it particularly relates to a kind of imaging sensor and preparation method thereof.
Background technique
The optical signal received can be converted to electric signal by imaging sensor, wide to realize the sensing to image
It is general to be applied in various imaging devices.However, due to by the intensity of light to be sensed may very big or very little, correspondingly exist
The phenomenon of overexposure or light-inletting quantity deficiency is resulted in imaging sensor, and then affects the sensing effect of imaging sensor.
Summary of the invention
According to one aspect of the disclosure, a kind of imaging sensor is provided, described image sensor includes: multiple sensings
Pixel, each sensor pixel includes one or more sub-pixels, at least partly sensor pixel, the sub- picture of the sensor pixel
Element includes the first sub-pixel, and first sub-pixel includes the first filter layer comprising electrochromic material；And control circuit,
The control circuit is configured as applying electrical bias to first filter layer；Wherein, the color of first filter layer and/or
Transparency changes in response to the electrical bias that is applied.
In some embodiments, in which: each sub-pixel includes photo-sensing device, the sub-pixel of the sensor pixel
In other sub-pixels in addition to first sub-pixel include the second filter layer；The photo-sensing device is received by described the
One filter layer or the light of the second filter layer incidence.
In some embodiments, wherein the electrical bias by the control circuit according to it is at least one of following come really
Fixed: at least one sub-pixel in other sub-pixels in the sub-pixel of the sensor pixel in addition to first sub-pixel connects
The intensity of the light of receipts；The intensity of the received light of sensor pixel；And the indicating ambient light provided by environment optical detecting unit
Intensity signal.
In some embodiments, described image sensor further include: isolation grid, the isolation grid are configured as separating
Respective first filter layer for the sub-pixel being disposed adjacent or the second filter layer；Wherein, the isolation grid includes being used for
The electrode of first filter layer, the control circuit apply the electricity partially to first filter layer by the electrode
It sets.
In some embodiments, in which: at least one sub-pixel in each sensor pixel includes comprising electroluminescent change
First filter layer of color material.
In some embodiments, in which: all sub-pixels in at least partly described sensor pixel do not include comprising electricity
Cause the first filter layer of off-color material.
In some embodiments, it includes comprising electrochromic material that the first sensor pixel, which is wherein at least one sub-pixel,
The sensor pixel of first filter layer, the second sensor pixel be wherein all sub-pixels do not include comprising electrochromic material the
The sensor pixel of one filter layer, wherein first sensor pixel and the alternate setting of second sensor pixel.
In some embodiments, described image sensor further include: colour cast correction circuit, the colour cast correction circuit are matched
It is set to the second output intensity signal sensed according to second sensor pixel, corrects the first of the first sensor pixel sensing
The colour cast of output intensity signal.
In some embodiments, in a sensor pixel, at most a sub-pixel includes comprising electrochromism material
First filter layer of material.
In some embodiments, the sensor pixel includes red sub-pixel, green sub-pixels and blue subpixels, wherein
The green sub-pixels include the first filter layer comprising electrochromic material.
A kind of preparation method of imaging sensor another aspect of the present disclosure provides, the preparation method packet
It including: multiple sensor pixels is provided, each sensor pixel includes one or more sub-pixels, at least partly sensor pixel, institute
The sub-pixel for stating sensor pixel includes the first sub-pixel, and first sub-pixel includes the first optical filtering comprising electrochromic material
Layer；And control circuit is provided, the control circuit is configured as applying electrical bias to first filter layer；Wherein, described
The color and/or transparency of first filter layer change in response to the electrical bias that is applied.
In some embodiments, the preparation method further include: provide isolation grid, the isolation grid is configured as point
Every respective first filter layer for the sub-pixel being disposed adjacent or the second filter layer；Wherein, the isolation grid includes using
In the electrode of first filter layer, the control circuit applies the electricity partially to first filter layer by the electrode
It sets.
In some embodiments, the preparation method further include: colour cast correction circuit, the colour cast correction circuit quilt are provided
It is configured to the second output intensity signal sensed according to the second sensor pixel, corrects the first output light of the first sensor pixel sensing
The colour cast of strong signal, wherein first sensor pixel is that wherein at least one sub-pixel includes comprising electrochromic material
The sensor pixel of first filter layer, second sensor pixel are that wherein all sub-pixels do not include comprising electrochromic material
The first filter layer sensor pixel.
According to the another aspect of the disclosure, a kind of preparation method of imaging sensor, the preparation method packet are provided
It includes: substrate is provided；Being formed over the substrate includes the photo-sensing device in the sub-pixel of sensor pixel；Over the substrate
Form control circuit；Setting isolation grid over the substrate, the isolation grid includes multiple regions, the multiple region packet
Include the second open area corresponding to the first open area of the first filter layer and corresponding to the second filter layer, the isolation grid
Including electrode, the control circuit applies electrical bias to first filter layer by the electrode；Shape over the substrate
At filter layer, the filter layer includes the first filter layer and the second filter layer, and first filter layer includes electrochromic material
And be arranged in first open area, second filter layer is arranged in second open area.
In some embodiments, the preparation method further include: form through-hole, the through-hole is configured as described in electrical connection
Electrode is to the control circuit.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become more apparent from.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 shows a kind of diagrammatic cross-section of imaging sensor；
Fig. 2 shows the overlooking structure diagrams of filter layer in the sensor pixel of imaging sensor in Fig. 1；
Fig. 3 shows the structural schematic diagram of the imaging sensor according to one exemplary embodiment of the disclosure；
Fig. 4 (a)~Fig. 4 (c) shows diagrammatic cross-section of the imaging sensor in Fig. 3 under different light intensity to be measured,
In, the light intensity to be measured in Fig. 4 (b) is greater than the light intensity to be measured in Fig. 4 (a), and the light intensity to be measured in Fig. 4 (c) is less than in Fig. 4 (a)
Light intensity to be measured；
Fig. 5 (a)~Fig. 5 (c) shows in Fig. 4 (a)~Fig. 4 (c) bowing for filter layer in the sensor pixel of imaging sensor
Depending on structural schematic diagram, wherein the light intensity to be measured in Fig. 5 (a) is equal with the light intensity to be measured in Fig. 4 (a), the light to be measured in Fig. 5 (b)
Equal with the light intensity to be measured in Fig. 4 (b) by force, the light intensity to be measured in Fig. 5 (c) is equal with the light intensity to be measured in Fig. 4 (c)；
Fig. 6 shows the flow diagram of the preparation method of the imaging sensor according to one exemplary embodiment of the disclosure；
Fig. 7 shows the process signal of the preparation method of the imaging sensor according to disclosure another exemplary embodiment
Figure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In some cases, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, the disclosure is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.That is, structure and method herein is to show in an exemplary fashion, for
The different embodiments of structures and methods in the bright disclosure.It will be understood by those skilled in the art, however, that they be merely illustrative can
Exemplary approach with the disclosure for being used to implement, rather than mode exhausted.In addition, attached drawing is not necessarily drawn to scale, it is some
Feature may be amplified to show the details of specific component.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Imaging sensor can convert optical signals to electric signal, to realize the sensing to image.In a kind of image sensing
It may include multiple sensor pixels being arranged in array in device, to sense the light intensity of light to be measured on corresponding position respectively.Such as Fig. 1
With shown in Fig. 2, wherein figure 1 illustrate a kind of diagrammatic cross-sections of imaging sensor, and Fig. 2 shows imaging sensors in Fig. 1
The overlooking structure diagram of filter layer 1101 ' in sensor pixel 100 '.In a sensor pixel 100 ', may include one or
Multiple sub-pixels 110 '.Wherein, each sub-pixel 110 ' may include filter layer 1101 ' and photo-sensing device 1102 '.
In Fig. 1, different arrows indicates the light to be measured for being in different frequency range.In order to the light to be measured for being in different frequency range
It is sensed respectively, to realize preferably sensing effect, filter layer 1101 ' can be set in each sub-pixel 110 ' respectively.
In a sub-pixel 110 ', light to be measured is incident in corresponding photo-sensing device 1102 ' through filter layer 1101 ', by light sensation
Electric signal will be converted to by the light to be measured to filter by surveying device 1102 '.Filter layer 1101 ' can allow for the light portion in certain frequency range
Divide or all penetrate, and filters out the light in other frequency ranges.Different filter layers 1101 ' can have different optical filtering frequency ranges.
Filter layer 1101 ' with different optical filtering frequency ranges can carry out different settings according to different applications.For example, filter layer
It can arrange in array-like.In a specific example, in one pixel, pixel may include a red sub-pixel, one
Blue subpixels and two green sub-pixels.Accordingly, for filter layer 1101a ', 1101b ' and the 1101c ' of different subpixel
As shown in Figure 2.Certainly, in other examples, other kinds of filter layer can also be selected, or is arranged in other forms various
Filter layer, to realize the sensing to light to be measured.
In fig. 1 and 2, the filtering properties of each filter layer 1101 ' can be basicly stable, substantially will not be with figure
Operating status as sensor or the variation to factors such as measured light intensities and change.Therefore, when light to be measured is very strong (such as fine
Bright noon), the light intensity that photo-sensing device 1102 ' is reached after the optical filtering of filter layer 1101 ' still may be very big, approaches or even super
, there is the case where overexposure in the maximum value of the light intensity sensing range of photo-sensing device 1102 ' out, causes sensing effect poor, very
Extremely photo-sensing device 1102 ' is damaged.On the contrary, when light to be measured is very weak (such as at dusk or night), through filter layer
The light intensity that photo-sensing device 1102 ' is reached after 1101 ' optical filterings is smaller, may be close to the light of even less than photo-sensing device 1102 '
, there is the situation of light-inletting quantity deficiency, it is difficult to effectively be sensed by photo-sensing device 1102 ' in the minimum value of strong sensing range.
That is, when the intensity of light to be measured is very big or very little, sensing effect is all difficult to be protected in this imaging sensor
Barrier, imaging sensor itself may also be by too strong photo damage to be measured.
In an exemplary embodiment of the disclosure, a kind of imaging sensor is proposed.As shown in figure 3, the image sensing
Device may include multiple sensor pixels 100 and control circuit 200.
Fig. 4 (a) shows the diagrammatic cross-section of imaging sensor in the present embodiment, wherein each sensor pixel 100 can be with
Including one or more sub-pixels 110.Fig. 5 (a) shows filter layer in the sensor pixel 100 of imaging sensor in Fig. 4 (a)
Overlooking structure diagram.As shown in Fig. 4 (a) and Fig. 5 (a), at least partly sensor pixel 100, the sub- picture of sensor pixel 100
Element 110 may include the first sub-pixel 111, wherein the first sub-pixel 111 includes the first filter layer comprising electrochromic material
1111.The optical properties such as the color and/or transparency of electrochromic material can change under the electrical bias that outside applies.
By in sensor pixel 100 be arranged include comprising electrochromic material the first filter layer 1111 the first sub-pixel 111, can
To adjust light to be measured received by sensor pixel 100.
And the control circuit 200 of imaging sensor is configured as applying the first filter layer 1111 electrical bias, first filters
The color and/or transparency of layer 1111 change in response to the electrical bias applied.The control circuit can be arranged with sensor pixel
In identical substrate, or it can also in addition be separately provided and be electrically connected with the first filter layer 1111 in sensor pixel,
To realize the control to the color and/or transparency of the first filter layer 1111.
In a specific example, applied electrical bias can be controlled in the following way, to adjust the first filter layer
1111 color and/or transparency.
As shown in Fig. 4 (a) and Fig. 5 (a), when the intensity for the light to be measured that sensor pixel 100 receives is less than or equal to first
Preset threshold, and when (such as in the morning) be greater than the second preset threshold, can apply suitable electrical bias (first biasing) makes the
One filter layer 1111 is in the first color (for example, green), and the first color frequency range of the light to be measured for allowing to receive is by being felt
It measures.
As shown in Fig. 4 (b) and 5 (b), when the intensity for the light to be measured that sensor pixel 100 receives is greater than the first preset threshold
When (such as at sunny noon), suitable electrical bias (the second biasing) can be applied so that the first filter layer 1111 is in the second face
Color (for example, grey black) enhances the optical filtering to light to be measured, to avoid the generation of overexposure situation.
As shown in Fig. 4 (c) and Fig. 5 (c), when the intensity for the light to be measured that sensor pixel 100 receives is less than or equal to second
When preset threshold (such as at dusk or night), can apply suitable electrical bias (third biasing) makes the first filter layer 1111 be in
It is now third color (for example, white with certain transparency), weakens the optical filtering to light to be measured, to makes more light to be measured
Light-inletting quantity can be improved, to improve sensing effect by first filter layer 1111.
Certainly, in other specific examples, by changing the type etc. of electrochromic material, the first sub-pixel can also be made
Other colors and/or transparency is presented in the first filter layer 1111 in 111 in some cases, or follows other rules
Change with the electrical bias applied, to meet specific demand.Wherein, electrochromic material specifically can be three oxidations
Tungsten, polythiophene class and its derivative, purple sieve essence class, tetrathiafulvalene, metallo phthalocyanine etc..
It may include red sub-pixel, green sub-pixels and indigo plant in a sensor pixel 100 in a specific example
Sub-pixels, the filter layer for each sub-pixel can have different optical filtering frequency ranges.Red filter layer in red sub-pixel
1101a can be such that the light in red frequency range passes through；Green color filter 1101b in green sub-pixels can make in green frequency range
Light passes through；Blue color filter layer 1101c in blue subpixels can be such that the light in blue frequency bands passes through.Certainly, another specific
It can also include white sub-pixels in sensor pixel 100, also can be set in white sub-pixels can permit substantially in example
The white filter layer that the light of upper full frequency band passes through, to assist to adjust the intensity and/or face of the light that the sensor pixel is sensed
Color etc..
By being arranged in the filter layer of above-mentioned red sub-pixel, blue subpixels, green sub-pixels or white sub-pixels
Electrochromic material can make corresponding filter layer have electrochromic effect, hereinafter claim have electrochromism effect comprising this
The sub-pixel for the filter layer answered is the first sub-pixel.In a specific example, the sub- picture of green in sensor pixel 100 can be set
Element includes the first filter layer comprising electrochromic material.Specifically, can directly select under certain electrical bias states in green
The electrochromic material of color forms the first filter layer, can also separately add in the filter layer of common green sub-pixels electroluminescent
Off-color material makes the filter layer of the sub-pixel have electrochromic effect.
As shown in Fig. 4 (a)~Fig. 4 (c) and Fig. 5 (a)~Fig. 5 (c), except the first son in the sub-pixel 110 of sensor pixel 100
Other sub-pixels 112 except pixel 111 may include the second filter layer 1121.In general, second filter layer 1121 can have
Have a substantially stable filtering properties, substantially will not with the operating status of imaging sensor or the variation such as intensity of light to be measured and
Change.
Specifically, which can not include electrochromic material, or can not be to the second filter layer
1121 apply electrical bias and change its color and/or transparency.On the one hand, for second filter layer 1121, do not have to setting with
Apply the relevant circuit of electrical bias, being electrically connected between the second filter layer 1121 and control circuit 200 can also be simplified
Even without be considered, thus simplify in imaging sensor circuit setting.On the other hand, it is contemplated that the second filter layer 1121
Color and/or transparency can be known or measure in advance, therefore include its of second filter layer 1121 by setting
His sub-pixel 112 can carry out colour cast calibration etc. to the sensing result of imaging sensor.
Each sub-pixel 110 can also include photo-sensing device 1102, and photo-sensing device 1102 can will be received
Optical signal is converted to electric signal.In the image sensor, photo-sensing device 1102 can receive by the first filter layer 1111 or
The incident light of second filter layer 1121, and generate corresponding electric signal.Due to the first filter layer 1111 or the second filter layer 1121
Filter action, help to make the sensing for reaching the parameters and the photo-sensing device 1102 such as the frequency range of light of photo-sensing device 1102
Performance is consistent, so as to improve sensing effect, while also can preferably protect photo-sensing device 1102, avoid excessive light intensity
Lead to the damage of photo-sensing device 1102.
It can only include first sub-pixel 111 in a sensor pixel 100.Correspondingly, it is only necessary to for this
One sub-pixel 111 is arranged for applying the circuit of electrical bias, to simplify the setting of circuit in imaging sensor.It is specific one
In example, as shown in Fig. 5 (a)~5 (c), one can be arranged in each sensor pixel 100 and be in diagonal with green sub-pixels
The first sub-pixel on position, i.e. the first filter layer 1111 and green color filter 1101b are on diagonal position, and first filter
Photosphere 1111 is under certain electrical bias situations in green.In other specific examples, it also can according to need and change the first sub- picture
The position of element 111, or change electrochromic material therein.
It is of course also possible to multiple first sub-pixels be arranged in a sensor pixel, thus adjusting of the enhancing to light to be measured.
For example, at least two the first sub-pixels comprising electrochromic material can be set in a sensor pixel.Also, it is different
Different color and/or transparency can be presented in the filter layer of first sub-pixel under certain electrical bias situations, to realize to not
With the more targeted adjusting of the light to be measured of frequency range.
In the imaging sensor of the disclosure, sensor pixel 100 including the first sub-pixel 1111 and do not include the first son
The sensor pixel 100 of pixel 1111 may exist a variety of set-up modes, to meet different sensing demands.
In one example, at least one sub-pixel 110 in each sensor pixel 100 includes comprising electrochromic material
First filter layer 1111.That is, in all sensor pixels 100 of imaging sensor, each sensor pixel 100 includes
At least one first sub-pixel 111, wherein the color and/or transparency of the first filter layer 1111 are can be with the electricity applied
The variation of biasing and change, so as to be well adapted for the variation of environment light, have stronger regulation performance.
In another example, all sub-pixels 110 at least partly in sensor pixel 100 do not include comprising electrochromism
First filter layer 1111 of material.That is, in all sensor pixels 100 of imaging sensor, at least section senses
Pixel 100 be do not include the first sub-pixel 111.Under normal circumstances, in this sensor pixel the filter layer of each sub-pixel face
Color and/or transparency are metastable.In such imaging sensor, due to reducing the first sub-pixel 111 total
Accounting in 110 number of sub-pixel, therefore help to simplify the circuit setting of imaging sensor, and it is possible to it reduces required
The amount of electrochromic material, to reduce the cost of imaging sensor.
For the convenience of description, limit the first sensor pixel as wherein at least one sub-pixel include comprising electrochromic material
The first filter layer sensor pixel, the second sensor pixel is that wherein all sub-pixels do not include comprising electrochromic material
The sensor pixel of first filter layer.So, in one example, the first sensor pixel and the second sensor pixel in imaging sensor
It can be with alternate setting.Specifically, it can be the second sensing picture with the sensor pixel adjacent up and down of the first sensor pixel
Element similarly can be the first sensor pixel with the sensor pixel adjacent up and down of the second sensor pixel.This setup
On the one hand relatively enough spaces can have been reserved to apply the interlock circuit of electrical bias to the first sensor pixel, on the other hand may be used
To obtain telecommunications in a lesser sensing region, being sensed respectively by the first sensor pixel and the second sensor pixel simultaneously
Number, to help the operations such as subsequent colour cast correction.
The color and/or transparency of electrochromic material are changed according to the electrical bias applied.Specifically, the electricity is inclined
Usually voltage bias is set, so that electrochromic material is in certain electric field.It should be noted that electricity as described herein is partially
It sets and also includes the case where being biased to zero.In order to realize the adjusting to the first sub-pixel, the amount of electrical bias can be by control circuit root
It is determined according to certain physical quantitys.
In a specific example, electrical bias can according in the sub-pixel 110 of sensor pixel 100 remove the first sub-pixel 111
Except other sub-pixels 112 in the received light of at least one sub-pixel intensity determine.Specifically, other sub-pixels 112
The intensity of the light received can reflect the intensity of environment light or light to be measured under the present situation to a certain extent.When other sub- pictures
When the intensity of the received light of at least one sub-pixel in element 112 is larger, the electrical bias of adjustable application makes by the first filter
The light intensity that photosphere 1111 is incident on photo-sensing device 1102 dies down, to avoid overexposure.When in other sub-pixels 112 at least
When the intensity of the one received light of sub-pixel is smaller, the electrical bias of adjustable application makes incident by the first filter layer 1111
The intensity of light on to photo-sensing device 1102 becomes strong, to avoid light-inletting quantity deficiency.When at least one of other sub-pixels 112
When the moderate strength of the received light of sub-pixel, the electrical bias state currently applied can be kept.
In another specific example, electrical bias can be determined according to the intensity of the received light of sensor pixel 100.Sensor pixel
The intensity of 100 received light can also reflect the intensity of environment light or light to be measured under the present situation to a certain extent.Work as sensing
When the intensity of the received light of pixel 100 is larger, the electrical bias of adjustable application makes to be incident on light by the first filter layer 1111
The weakened of light on sensing device 1102, to avoid overexposure.When the intensity of the received light of sensor pixel 100 is smaller,
The electrical bias of adjustable application becomes the intensity for the light being incident on photo-sensing device 1102 by the first filter layer 1111
By force, to avoid light-inletting quantity deficiency.When the moderate strength of the received light of sensor pixel 100, the electricity currently applied can be kept partially
Set state.
In another specific example, electrical bias can be by the letter of the intensity for the indicating ambient light that environment optical detecting unit provides
Number determination.The environment optical detecting unit can be set in the image sensor, be also possible to independently of imaging sensor and therewith
Other equipment of electrical connection.Environment optical detecting unit generates corresponding electric signal according to the intensity of detected environment light.Root
The signal of the intensity of the indicating ambient light provided according to environment optical detecting unit more accurately can adjust electricity partially according to environment light
It sets, the interference to environment light detection for avoiding the first sub-pixel 111 from itself may introducing.It, can when the intensity of environment light is larger
To adjust the electrical bias applied, make the weakened that the light on photo-sensing device 1102 is incident on by the first filter layer 1111,
To avoid overexposure.When the intensity of environment light is smaller, the electrical bias of adjustable application makes to enter by the first filter layer 1111
The intensity for being mapped to the light on photo-sensing device 1102 becomes strong, to avoid light-inletting quantity deficiency.It, can be with when the moderate strength of environment light
Keep the electrical bias state currently applied.
As shown in Fig. 4 (a)~Fig. 4 (c), imaging sensor can also include isolation grid 300, and isolation grid 300 is matched
It is set to respective first filter layer 1111 or the second filter layer 1121 for separating the sub-pixel 110 being disposed adjacent.Wherein, lattice are isolated
Grid 300 can be formed by opaque material, to realize the optical isolation between adjacent subpixels 110, avoid generating light interference.
Isolation grid 300 can also include the electrode 310 for the first filter layer 1111, and control circuit 200 passes through electrode
310 to apply electrical bias to the first filter layer 1111.The electrode 310 can be embedded in the ontology material of the insulation of isolation grid 300
In material, or it is formed on the substrate that the insulation in grid 300 is isolated.Electrode 310 is also electrically connected with the first filter layer 1111, with
Application is electrically biased on the first filter layer 1111.In the present embodiment, electrode 310 applies according to the electric signal of control circuit 200
It is electrically biased on the electrochromic material of the first filter layer 1111, changes the color of the first filter layer 1111 and/or transparency,
And then adjusting of the realization to the light to be measured by optical filtering being incident on photo-sensing device 1102.
Further, imaging sensor can also include colour cast correction circuit, and colour cast correction circuit be configured as according to the
Second output intensity signal of two sensor pixels sensing corrects the color of the first output intensity signal of the first sensor pixel sensing
Partially.Specifically, each sub-pixel 110 senses the light in certain frequency range respectively in each sensor pixel 100, later, by each height
The sensing result of pixel 110 combines, and obtains the light intensity on the corresponding position of the sensor pixel.However, due to the first sub-pixel 111
In the first filter layer 1111 color and/or transparency variation, lead to the relative intensity of the light of different frequency range it can also happen that
Variation, so as to cause colour cast.However, it is contemplated that the color of the filter layer of each sub-pixel and/or transparent in the second sensor pixel
Degree can be previously known or be measured, therefore the sensing result of the second sensor pixel is not no colour cast, in other words the second sense
The colour cast for surveying the sensing result of pixel is easy to be repaired.Correspondingly, it can be entangled according to the sensing result of the second sensor pixel
Colour cast in the sensing result of positive first sensor pixel.It further, can be according to neighbouring in order to improve colour cast error-correcting effect
The sensing result of second sensor pixel corrects the colour cast of the sensing result of the first sensor pixel, to avoid on different location
Light to be measured variation caused by deviation.
According to another aspect of the present disclosure, a kind of preparation method of imaging sensor is proposed, as shown in Figure 6, comprising:
Step S110, multiple sensor pixels are provided, each sensor pixel includes one or more sub-pixels, at least partly
In sensor pixel, the sub-pixel of sensor pixel includes the first sub-pixel, and the first sub-pixel includes the comprising electrochromic material
One filter layer；And
Step S120, control circuit is provided, control circuit is configured as applying electrical bias to the first filter layer；
Wherein, the color and/or transparency of the first filter layer change in response to the electrical bias that is applied.
In a specific example, control circuit be can be set at least one substrate where sensor pixel, alternatively,
Control circuit can be provided separately, and be electrically connected with the first filter layer in the first sub-pixel, to apply electrical bias to the first filter
Photosphere adjusts its color and/or transparency.
Further, preparation method can also include:
Step S130, isolation grid is provided, isolation grid is configured as separate the sub-pixel being disposed adjacent respective the
One filter layer or the second filter layer；
Wherein, isolation grid includes the electrode for the first filter layer；
Control circuit applies electrical bias to the first filter layer by electrode.
Isolation grid can be formed by opaque material, to avoid the interference of the light between adjacent subpixels.It is being isolated
In grid, other parts in addition to an electrode can be formed by insulating materials, to reduce the interference between electric signal.
Further, preparation method can also include:
Step S140, colour cast correction circuit is provided, colour cast correction circuit is configured as according to the second sensor pixel sensing
Second output intensity signal corrects the colour cast of the first output intensity signal of the first sensor pixel sensing；
Wherein, it includes the first filter layer comprising electrochromic material that the first sensor pixel, which is wherein at least one sub-pixel,
Sensor pixel, the second sensor pixel be wherein all sub-pixels do not include the first filter layer comprising electrochromic material
Sensor pixel.
Colour cast correction circuit, which can be, to be separately provided.Alternatively, colour cast correction circuit can also integrally be set with control circuit
It sets.
According to the another aspect of the disclosure, as shown in fig. 7, proposing a kind of preparation method of imaging sensor, comprising:
Step S210, substrate is provided；
Step S220, it is formed on the substrate including the photo-sensing device in the sub-pixel of sensor pixel；
Step S230, control circuit is formed on the substrate；
Step S240, setting isolation grid, isolation grid include multiple regions on substrate, and multiple regions include corresponding to
First open area of the first filter layer and the second open area corresponding to the second filter layer, isolation grid includes electrode, control
Circuit processed applies electrical bias to the first filter layer by electrode；
Step S250, filter layer is formed on the substrate, filter layer includes the first filter layer and the second filter layer, and first filters
Layer is comprising electrochromic material and is arranged in the first open area, and the second filter layer is arranged in the second open area.
Further, preparation method can also include:
Step S260, through-hole is formed, through-hole is configured as electrode electrically connected to control circuit.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
In addition, the description of front may be referred to and be " connected " or " coupling " element together or node or feature.Such as
It is used herein, unless explicitly stated otherwise, " connection " mean an element/node/feature and another element/node/
Feature is being directly connected (or direct communication) electrically, mechanically, in logic or in other ways.Similarly, unless separately
It clearly states outside, " coupling " means that an element/node/feature can be with another element/node/feature with direct or indirect
Mode link mechanically, electrically, in logic or in other ways to allow to interact, even if the two features may
It is not directly connected to be also such.That is, " coupling " is intended to encompass the direct connection and indirectly of element or other feature
Connection, including the use of the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can with the similar terms such as " first " used herein, " second ", and
And it thus is not intended to limit.For example, unless clearly indicated by the context, be otherwise related to structure or element word " first ", "
Two " do not imply order or sequence with other such digital words.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
In addition, embodiment of the present disclosure can also include following example:
1, a kind of imaging sensor, comprising:
Multiple sensor pixels, each sensor pixel includes one or more sub-pixels, at least partly sensor pixel, institute
The sub-pixel for stating sensor pixel includes the first sub-pixel, and first sub-pixel includes the first optical filtering comprising electrochromic material
Layer；And
Control circuit, the control circuit are configured as applying electrical bias to first filter layer；
Wherein, the color and/or transparency of first filter layer change in response to the electrical bias that is applied.
2, the imaging sensor according to 1, in which:
Each sub-pixel includes photo-sensing device；
Other sub-pixels in the sub-pixel of the sensor pixel in addition to first sub-pixel include the second filter layer；
The photo-sensing device receives the light by first filter layer or the second filter layer incidence.
3, the imaging sensor according to 1, wherein the electrical bias by the control circuit according in following at least
One determines:
At least one of other sub-pixels in the sub-pixel of the sensor pixel in addition to first sub-pixel
The intensity of the received light of pixel；
The intensity of the received light of sensor pixel；And
The signal of the intensity of the indicating ambient light provided by environment optical detecting unit.
4, the imaging sensor according to 1, described image sensor further include:
Grid is isolated, the isolation grid is configured as separating respective the first of the sub-pixel being disposed adjacent and filters
Layer or the second filter layer；
Wherein, the isolation grid includes the electrode for first filter layer；
The control circuit applies the electrical bias to first filter layer by the electrode.
5, the imaging sensor according to 1, in which:
At least one sub-pixel in each sensor pixel includes the first filter layer comprising electrochromic material.
6, the imaging sensor according to 1, in which:
All sub-pixels in at least partly described sensor pixel do not include the first optical filtering comprising electrochromic material
Layer.
7, the imaging sensor according to 6, the first sensor pixel are that wherein at least one sub-pixel includes comprising electroluminescent
The sensor pixel of first filter layer of off-color material；
Second sensor pixel is the sense that wherein all sub-pixels do not include the first filter layer comprising electrochromic material
Survey pixel；
Wherein, first sensor pixel and the alternate setting of second sensor pixel.
8, the imaging sensor according to 7, described image sensor further include:
Colour cast correction circuit, it is defeated that the colour cast correction circuit is configured as sense according to second sensor pixel second
Light intensity signal out corrects the colour cast of the first output intensity signal of the first sensor pixel sensing.
9, the imaging sensor according to 1, in a sensor pixel, at most a sub-pixel includes comprising electricity
Cause the first filter layer of off-color material.
10, the imaging sensor according to any one of 1 to 9, the sensor pixel include red sub-pixel, green
Pixel and blue subpixels；
Wherein the green sub-pixels include the first filter layer comprising electrochromic material.
11, a kind of preparation method of imaging sensor, comprising:
Multiple sensor pixels are provided, each sensor pixel includes one or more sub-pixels, at least partly sensor pixel
In, the sub-pixel of the sensor pixel includes the first sub-pixel, and first sub-pixel includes the comprising electrochromic material
One filter layer；And
Control circuit is provided, the control circuit is configured as applying electrical bias to first filter layer；
Wherein, the color and/or transparency of first filter layer change in response to the electrical bias that is applied.
12, the preparation method according to 11, the preparation method further include:
Isolation grid is provided, the isolation grid is configured as separating respective the first of the sub-pixel being disposed adjacent
Filter layer or the second filter layer；
Wherein, the isolation grid includes the electrode for first filter layer；
The control circuit applies the electrical bias to first filter layer by the electrode.
13, the preparation method according to 11, the preparation method further include:
Colour cast correction circuit is provided, it is defeated that the colour cast correction circuit is configured as sense according to the second sensor pixel second
Light intensity signal out corrects the colour cast of the first output intensity signal of the first sensor pixel sensing；
Wherein, it includes the first filter comprising electrochromic material that first sensor pixel, which is wherein at least one sub-pixel,
The sensor pixel of photosphere, second sensor pixel be wherein all sub-pixels do not include comprising electrochromic material first
The sensor pixel of filter layer.
14, a kind of preparation method of imaging sensor, comprising:
Substrate is provided；
Being formed over the substrate includes the photo-sensing device in the sub-pixel of sensor pixel；
Control circuit is formed over the substrate；
Setting isolation grid over the substrate, the isolation grid includes multiple regions, and the multiple region includes pair
Should the first open area in the first filter layer and the second open area corresponding to the second filter layer, the isolation grid includes
Electrode, the control circuit apply electrical bias to first filter layer by the electrode；
Forming filter layer over the substrate, the filter layer includes the first filter layer and the second filter layer, and described first
Filter layer includes electrochromic material and is arranged in first open area, and second filter layer is arranged described second
In open area.
15, the preparation method according to 14, the preparation method further include:
Through-hole is formed, the through-hole is configured as being electrically connected the electrode to the control circuit.
Claims (10)
1. a kind of imaging sensor characterized by comprising
Multiple sensor pixels, each sensor pixel includes one or more sub-pixels, at least partly sensor pixel, the sense
The sub-pixel for surveying pixel includes the first sub-pixel, and first sub-pixel includes the first filter layer comprising electrochromic material；
And
Control circuit, the control circuit are configured as applying electrical bias to first filter layer；
Wherein, the color and/or transparency of first filter layer change in response to the electrical bias that is applied.
2. imaging sensor according to claim 1, which is characterized in that wherein:
Each sub-pixel includes photo-sensing device；
Other sub-pixels in the sub-pixel of the sensor pixel in addition to first sub-pixel include the second filter layer；
The photo-sensing device receives the light by first filter layer or the second filter layer incidence.
3. imaging sensor according to claim 1, which is characterized in that wherein the electrical bias is by the control circuit root
It is determined according at least one of following:
At least one sub-pixel in other sub-pixels in the sub-pixel of the sensor pixel in addition to first sub-pixel
The intensity of received light；
The intensity of the received light of sensor pixel；And
The signal of the intensity of the indicating ambient light provided by environment optical detecting unit.
4. imaging sensor according to claim 1, which is characterized in that described image sensor further include:
Be isolated grid, the isolation grid be configured as separating respective first filter layer of the sub-pixel being disposed adjacent or
Second filter layer；
Wherein, the isolation grid includes the electrode for first filter layer；
The control circuit applies the electrical bias to first filter layer by the electrode.
5. imaging sensor according to claim 1, which is characterized in that wherein:
At least one sub-pixel in each sensor pixel includes the first filter layer comprising electrochromic material.
6. a kind of preparation method of imaging sensor characterized by comprising
Multiple sensor pixels are provided, each sensor pixel includes one or more sub-pixels, at least partly sensor pixel, institute
The sub-pixel for stating sensor pixel includes the first sub-pixel, and first sub-pixel includes the first optical filtering comprising electrochromic material
Layer；And
Control circuit is provided, the control circuit is configured as applying electrical bias to first filter layer；
Wherein, the color and/or transparency of first filter layer change in response to the electrical bias that is applied.
7. preparation method according to claim 6, which is characterized in that the preparation method further include:
Isolation grid is provided, the isolation grid is configured as separating respective the first of the sub-pixel being disposed adjacent and filters
Layer or the second filter layer；
Wherein, the isolation grid includes the electrode for first filter layer；
The control circuit applies the electrical bias to first filter layer by the electrode.
8. preparation method according to claim 6, which is characterized in that the preparation method further include:
Colour cast correction circuit is provided, the colour cast correction circuit is configured as the second output light sensed according to the second sensor pixel
Strong signal corrects the colour cast of the first output intensity signal of the first sensor pixel sensing；
Wherein, it includes the first filter layer comprising electrochromic material that first sensor pixel, which is wherein at least one sub-pixel,
Sensor pixel, second sensor pixel be wherein all sub-pixels do not include comprising electrochromic material first filter
The sensor pixel of layer.
9. a kind of preparation method of imaging sensor characterized by comprising
Substrate is provided；
Being formed over the substrate includes the photo-sensing device in the sub-pixel of sensor pixel；
Control circuit is formed over the substrate；
Setting isolation grid over the substrate, the isolation grid includes multiple regions, and the multiple region includes corresponding to
First open area of the first filter layer and the second open area corresponding to the second filter layer, the isolation grid include electricity
Pole, the control circuit apply electrical bias to first filter layer by the electrode；
Filter layer is formed over the substrate, and the filter layer includes the first filter layer and the second filter layer, and described first filters
Layer is comprising electrochromic material and is arranged in first open area, and the second filter layer setting is in second opening
In region.
10. preparation method according to claim 9, which is characterized in that the preparation method further include:
Through-hole is formed, the through-hole is configured as being electrically connected the electrode to the control circuit.
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