TWI590497B - Light-emitting structure and the manufacture thereof - Google Patents
Light-emitting structure and the manufacture thereof Download PDFInfo
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- TWI590497B TWI590497B TW104130569A TW104130569A TWI590497B TW I590497 B TWI590497 B TW I590497B TW 104130569 A TW104130569 A TW 104130569A TW 104130569 A TW104130569 A TW 104130569A TW I590497 B TWI590497 B TW I590497B
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Description
本發明係有關一種電子元件,尤指一種發光電子元件之結構及其製法。 The invention relates to an electronic component, in particular to a structure of a light-emitting electronic component and a method of manufacturing the same.
隨著電子產業的蓬勃發展,電子產品在型態上趨於輕薄短小,在功能上則逐漸邁入高性能、高功能、高速度化的研發方向。其中,發光二極體(Light Emitting Diode,簡稱LED)因具有壽命長、體積小、高耐震性及耗電量低等優點,故廣泛地應用於照光需求之電子產品中,因此,於工業上、各種電子產品、生活家電之應用日趨普及。 With the rapid development of the electronics industry, electronic products tend to be light, thin and short in terms of type, and gradually become a high-performance, high-function, high-speed research and development direction in terms of functions. Among them, the Light Emitting Diode (LED) has the advantages of long life, small size, high shock resistance and low power consumption, so it is widely used in electronic products for illumination needs, and therefore, industrially. The use of various electronic products and home appliances is becoming more and more popular.
一般LED晶片係為兩面出光,如第1圖所示,習知LED元件1係為一具有相對之第一側10a與第二側10b的基板本體10,且該第一側10a具有複數電極100,其中,該第一側10a與第二側10b係為發光側。 Generally, the LED chip is light-emitting on both sides. As shown in FIG. 1, the conventional LED element 1 is a substrate body 10 having a first side 10a and a second side 10b opposite to each other, and the first side 10a has a plurality of electrodes 100. The first side 10a and the second side 10b are light emitting sides.
惟,習知LED元件1中,由於該第一側10a與第二側10b係為發光側,故其散熱不佳。 However, in the conventional LED element 1, since the first side 10a and the second side 10b are light-emitting sides, heat dissipation is poor.
再者,目前雖然有覆晶式LED晶片為單面出光型式而具有較佳散熱效果,但該覆晶式LED晶片之價格昂貴。 Moreover, although the flip-chip type LED chip has a single heat-dissipating type and has a better heat-dissipating effect, the flip-chip type LED chip is expensive.
因此,如何克服習知技術中之種種問題,實已成目前 亟欲解決的課題。 Therefore, how to overcome various problems in the prior art has become the current The problem that I want to solve.
鑑於上述習知技術之缺失,本發明提供一種發光結構,係包括:基板單元,係具有相對之第一側與第二側,該第一側及第二側俱為發光側,且該第一側具有複數電極;以及反光層,係形成於該基板單元之第一側上,且該反光層外露該些電極。 In view of the above-mentioned deficiencies of the prior art, the present invention provides a light-emitting structure, comprising: a substrate unit having opposite first and second sides, the first side and the second side being light-emitting sides, and the first The side has a plurality of electrodes; and a light reflecting layer is formed on the first side of the substrate unit, and the reflective layer exposes the electrodes.
本發明復提供一種發光結構之製法,係包括:提供一具有相對之第一側與第二側的基板單元,該第一側及第二側俱為發光側,且該第一側具有複數電極;以及形成反光層於該基板單元之第一側上,且該反光層外露該些電極。 The invention provides a method for fabricating a light emitting structure, comprising: providing a substrate unit having opposite first and second sides, wherein the first side and the second side are all light emitting sides, and the first side has a plurality of electrodes And forming a reflective layer on the first side of the substrate unit, and the reflective layer exposes the electrodes.
前述之發光結構及其製法中,該基板單元例如一般型式之發光二極體。 In the above-described light-emitting structure and method of manufacturing the same, the substrate unit is, for example, a general-type light-emitting diode.
前述之發光結構及其製法中,該反光層係為白膠層。 In the foregoing light-emitting structure and the method of manufacturing the same, the light-reflecting layer is a white rubber layer.
前述之發光結構及其製法中,復包括形成導體層於該反光層與該電極上。 In the foregoing light-emitting structure and method of manufacturing the same, the method further comprises forming a conductor layer on the light-reflecting layer and the electrode.
前述之發光結構及其製法中,該反光層復形成於該基板單元之側面上。 In the above light-emitting structure and method of manufacturing the same, the light-reflecting layer is formed on the side of the substrate unit.
由上可知,本發明之發光結構及其製法,係藉由反光層形成於該基板單元之第一側上,使該發光結構僅由該第二側出光,故本發明之發光結構僅需使用價格便宜的晶片,而無需使用價格貴的覆晶式晶片,即可具有良好之散熱效果。 As can be seen from the above, the light-emitting structure of the present invention and the manufacturing method thereof are formed on the first side of the substrate unit by the light-reflecting layer, so that the light-emitting structure emits light only from the second side, so the light-emitting structure of the present invention only needs to be used. A cheaper wafer without the need for expensive flip-chip wafers provides good heat dissipation.
1‧‧‧LED元件 1‧‧‧LED components
10,20‧‧‧基板本體 10,20‧‧‧Substrate body
10a,20a‧‧‧第一側 10a, 20a‧‧‧ first side
10b,20b‧‧‧第二側 10b, 20b‧‧‧ second side
100,200‧‧‧電極 100,200‧‧‧ electrodes
2,2’‧‧‧發光結構 2,2’‧‧‧Lighting structure
20’‧‧‧基板單元 20'‧‧‧Substrate unit
20c‧‧‧側面 20c‧‧‧ side
21,21’‧‧‧反光層 21,21’‧‧‧reflective layer
210‧‧‧開孔 210‧‧‧Opening
22‧‧‧導體層 22‧‧‧Conductor layer
23‧‧‧凹部 23‧‧‧ recess
S‧‧‧切割路徑 S‧‧‧ cutting path
第1圖係為習知LED元件之剖面圖;以及第2A至2C圖係為本發明之發光結構之製法之剖面示意圖;其中,第2A’及2C’圖係為第2A及2C圖之另一實施例,第2A”圖係為第2A圖省略反光層之上視圖。 1 is a cross-sectional view of a conventional LED element; and FIGS. 2A to 2C are schematic cross-sectional views showing a method of fabricating the light-emitting structure of the present invention; wherein, FIGS. 2A' and 2C' are diagrams of FIGS. 2A and 2C In one embodiment, the 2A" diagram is a top view of the second embodiment in which the reflective layer is omitted.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“第一”、“第二”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "first", "second" and "one" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments in the relative relationship are considered to be within the scope of the present invention.
第2A至2C圖係為本發明之發光結構2之製法之剖面示意圖。 2A to 2C are schematic cross-sectional views showing the manufacturing method of the light-emitting structure 2 of the present invention.
如第2A圖所示,提供一具有相對之第一側20a與第二側20b的基板本體20,且該第一側20a具有複數電極200。接著,形成一反光層21於該基板本體20之第一側 20a上,且該反光層21外露該些電極200。 As shown in FIG. 2A, a substrate body 20 having a first side 20a and a second side 20b opposite thereto is provided, and the first side 20a has a plurality of electrodes 200. Next, a light reflecting layer 21 is formed on the first side of the substrate body 20 20a, and the reflective layer 21 exposes the electrodes 200.
於本實施例中,該基板本體20係為發光體,如一般之發光二極體(LED),其可由第一側20a及第二側20b出光。 In the embodiment, the substrate body 20 is an illuminant, such as a general light emitting diode (LED), which can be lighted by the first side 20a and the second side 20b.
再者,該基板本體20之型態係為晶圓型態,如第2A”圖所示,該基板本體20包含複數基板單元20’。 Furthermore, the shape of the substrate body 20 is a wafer type, and as shown in Fig. 2A", the substrate body 20 includes a plurality of substrate units 20'.
又,該反光層21具有複數開孔210,以令各該電極200對應外露於各該開孔210,且該反光層21係為白膠層,以遮蔽該基板本體20之第一側20a所發出之光線。於本實施例中可透過例如網版印刷(screen printing)方式直接形成具外露出電極200之開孔210之白膠於該基板本體20之第一側20a上,亦或先在該基板本體20之第一側20a上全面覆蓋白膠,再形成外露出該電極200之開孔210。 The reflective layer 21 has a plurality of openings 210 for exposing the electrodes 200 to the openings 210, and the reflective layer 21 is a white layer to shield the first side 20a of the substrate body 20. The light that is emitted. In the present embodiment, the white glue having the opening 210 of the external exposed electrode 200 can be directly formed on the first side 20a of the substrate body 20 through, for example, screen printing, or in the substrate body 20 first. The first side 20a is covered with white glue, and an opening 210 is formed to expose the electrode 200.
另外,如第2A’圖所示,於形成該反光層21之前,可先形成複數凹部23於該基板本體20之第一側20a上(較佳地,該凹部23連通至該第二側20b),以供該反光層21’復形成於該些凹部23中。具體地,該些凹部23可沿該基板單元20’之邊緣形成,且該凹部23可例如為2A’圖之具垂直側面之凹部亦或為具傾斜側面之凹部。 In addition, as shown in FIG. 2A', before forming the light reflecting layer 21, a plurality of concave portions 23 may be formed on the first side 20a of the substrate body 20 (preferably, the concave portion 23 is connected to the second side 20b). ), the reflective layer 21 ′ is formed in the recesses 23 . Specifically, the recesses 23 may be formed along the edge of the substrate unit 20', and the recesses 23 may be, for example, a recess having a vertical side of the 2A' diagram or a recess having a sloped side.
如第2B圖所示,接續第2A圖之製程,形成一導體層22於該反光層21上與各該開孔210中,使該導體層22電性連接至該電極200。於本實施例中,該導體層22可例如為利用電鍍金屬層、化學沈積金屬層、或塗佈導電膏等方式所形成之柱體或線路之圖案化樣式。 As shown in FIG. 2B, following the process of FIG. 2A, a conductor layer 22 is formed on the light reflecting layer 21 and each of the openings 210, and the conductor layer 22 is electrically connected to the electrode 200. In this embodiment, the conductor layer 22 can be, for example, a patterned pattern of pillars or lines formed by plating a metal layer, chemically depositing a metal layer, or coating a conductive paste.
如第2C圖所示,沿如第2B圖所示之切割路徑S(即該基板單元20’之邊緣)進行切單製程,以製得複數個發光結構2,且因基板單元20’之第一側20a受該反光層21之阻擋,故實際上該發光結構2僅可由第二側20b出光。 As shown in FIG. 2C, a singulation process is performed along the dicing path S as shown in FIG. 2B (ie, the edge of the substrate unit 20') to obtain a plurality of light-emitting structures 2, and the substrate unit 20' The one side 20a is blocked by the light reflecting layer 21, so that the light emitting structure 2 can be lighted only by the second side 20b.
於其它實施例中,如第2C’圖所示,若依第2A’圖所示之製程進行後續製程,且該切割路徑S係沿該些凹部23之路徑,將製成另一種發光結構2’,且該反光層21’係形成於該基板單元20’之第一側20a及側面20c上。 In other embodiments, as shown in FIG. 2C', if the subsequent process is performed according to the process shown in FIG. 2A', and the cutting path S is along the path of the recesses 23, another light-emitting structure 2 will be fabricated. ', and the light reflecting layer 21' is formed on the first side 20a and the side surface 20c of the substrate unit 20'.
另外,本發明於其它實施例中,亦可直接針對單一之基板單元20’進行反光層之製程。 In addition, in other embodiments, the present invention can also directly perform the process of the reflective layer for a single substrate unit 20'.
本發明之製法係藉由該反光層21,21’形成於該基板單元20’之第一側20a(及該側面20c)上,使該發光結構2,2’僅由該第二側20b出光,故本發明之發光結構2,2’僅需使用價格便宜的一般LED晶片,而無需使用價格貴的覆晶式LED晶片,即可具有良好之散熱效果。 The method of the present invention is formed on the first side 20a (and the side surface 20c) of the substrate unit 20' by the light reflecting layer 21, 21', so that the light emitting structure 2, 2' is only emitted by the second side 20b. Therefore, the light-emitting structure 2, 2' of the present invention only needs to use a general-purpose LED chip which is inexpensive, and can have a good heat-dissipating effect without using a expensive flip-chip LED chip.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
2‧‧‧發光結構 2‧‧‧Lighting structure
20’‧‧‧基板單元 20'‧‧‧Substrate unit
20a‧‧‧第一側 20a‧‧‧ first side
20b‧‧‧第二側 20b‧‧‧ second side
200‧‧‧電極 200‧‧‧electrode
21‧‧‧反光層 21‧‧‧Reflective layer
22‧‧‧導體層 22‧‧‧Conductor layer
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