TWI590125B - Touch panels - Google Patents

Touch panels Download PDF

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TWI590125B
TWI590125B TW105112910A TW105112910A TWI590125B TW I590125 B TWI590125 B TW I590125B TW 105112910 A TW105112910 A TW 105112910A TW 105112910 A TW105112910 A TW 105112910A TW I590125 B TWI590125 B TW I590125B
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Taiwan
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copper
nickel
touch panel
layer
titanium
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TW105112910A
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Chinese (zh)
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TW201725487A (en
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李鼎祥
紀賀勛
許毅中
曾國瑋
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宸鴻科技(廈門)有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Position Input By Displaying (AREA)

Description

觸控面板 Touch panel

本揭露係有關於一種觸控面板,特別是有關於一種包含新穎導線設計的觸控面板。 The present disclosure relates to a touch panel, and more particularly to a touch panel including a novel wire design.

有關觸控面板的相關產品已大量使用在日常工作與生活中,一般來說,觸控面板結構包括形成在基板表面的感應區域,該感應區域用來感應人體的手指或類似於筆的書寫工具以達到觸控效果。 Related products for touch panels have been widely used in daily work and life. Generally, the touch panel structure includes a sensing area formed on the surface of the substrate, which is used to sense a finger of a human body or a writing instrument similar to a pen. To achieve the touch effect.

常見的投射電容式觸控面板是在基板表面設置彼此絕緣、交叉或不交叉的多個透明電極(例如銦錫氧化物(ITO)電極),該等透明電極再藉由週邊導線與控制器連接。當物體靠近或觸碰觸控面板時,會造成該觸碰位置電極之間的電容變化,該些電容變化訊號藉由週邊導線傳送至控制器加以運算,而確定觸碰位置的座標。 A common projected capacitive touch panel is provided with a plurality of transparent electrodes (such as indium tin oxide (ITO) electrodes) insulated, intersecting or not intersecting each other on the surface of the substrate, and the transparent electrodes are connected to the controller by peripheral wires. . When an object approaches or touches the touch panel, a change in capacitance between the electrodes at the touch position is caused, and the capacitance change signals are transmitted to the controller by the peripheral wires to calculate the coordinates of the touch position.

隨著觸控面板產品屏幕愈做愈大,既要能單手操控又要保有較佳持握尺寸,觸控面板廠商無不盡量將其邊框縮減,期望能達到最大屏幕尺寸與最佳持握尺寸。 As the screen of the touch panel product becomes larger and larger, it is necessary to control both the one-handed control and the better holding size. The touch panel manufacturers all try to reduce the size of the frame, and hope to achieve the maximum screen size and the best grip. size.

在傳統電容式觸控面板中,由於金屬材料具有良好導電性,因此,一般會採用金屬材料常見如鉬-鋁-鉬(Mo-Al-Mo)金屬疊層製作週邊導線。鋁是一種導電性很好的材 料,但與基材的附著力較差,且極易氧化,而用於提高其與基材附著力和保護其不被氧化的鉬材料,導電性較差。通常為了滿足觸控面板對周邊導線的面電阻(電阻率/膜厚)的要求(小於等於0.3歐),鉬-鋁-鉬合金的膜厚約須300nm,其中兩層鉬材料各50nm才能起到提升附著力和抗氧化腐蝕的效果,相應的鋁材料需200nm才能使金屬疊層符合面電阻要求。並且,鉬、鋁材質有較大差異,相同的蝕刻液對不同層的蝕刻速率差異較大,當進行蝕刻製程時,蝕刻液由表層向裡蝕刻至底層過程中,也會造成蝕刻液易向蝕刻層側邊侵蝕,產生側蝕現象,整體厚度越大,側蝕問題越嚴重。為了避免發生蝕刻不盡或側邊過度蝕刻的問題,以鉬-鋁-鉬合金製作出的導線必須具備較寬線寬與線距(蝕刻後的線寬、線距须達約25μm)無法做到細線路、細間距及觸控面板邊框窄化的效果。值得注意的是,此等問題不僅存在於上述投射電容式觸控面板中,同樣亦存在於電阻式、紅外線式及表面聲波式等其他常見的觸控面板結構中。此外,傳統高厚度導線所須用的靶材量相對較多,且靶材價格昂貴。 In the conventional capacitive touch panel, since the metal material has good electrical conductivity, a peripheral material such as a molybdenum-aluminum-molybdenum (Mo-Al-Mo) metal laminate is generally used to make a peripheral wire. Aluminum is a very conductive material The material has poor adhesion to the substrate and is highly oxidizable, and the molybdenum material for improving its adhesion to the substrate and protecting it from oxidation is inferior in electrical conductivity. Generally, in order to meet the surface resistance (resistivity/film thickness) of the peripheral wires of the touch panel (less than or equal to 0.3 ohms), the film thickness of the molybdenum-aluminum-molybdenum alloy is about 300 nm, and the two layers of molybdenum materials are each 50 nm. To improve the adhesion and anti-oxidation effect, the corresponding aluminum material needs 200nm to meet the surface resistance requirements of the metal laminate. Moreover, the molybdenum and aluminum materials have large differences, and the etching rate of the same etching liquid is different for different layers. When the etching process is performed, the etching liquid is etched from the surface layer to the bottom layer, which also causes the etching liquid to be easily oriented. The side of the etching layer is eroded, causing side etching. The larger the overall thickness, the more serious the side etching problem. In order to avoid the problem of incomplete etching or excessive etching on the side, the wire made of molybdenum-aluminum-molybdenum alloy must have a wide line width and line spacing (the line width after etching and the line spacing must be about 25 μm). The effect of thin lines, fine pitch and narrowing of the touch panel frame. It is worth noting that these problems exist not only in the above projected capacitive touch panel, but also in other common touch panel structures such as resistive, infrared, and surface acoustic wave. In addition, conventional high-thickness wires require a relatively large amount of target and the target is expensive.

根據本揭露的一實施例,提供一種觸控面板,包括:一基板,定義有一觸控區與一週邊區,該週邊區包圍該觸控區;複數條週邊導線,設置於該基板的該週邊區,其中該等週邊導線包括一金屬層與一第一鎳銅鈦層,該金屬層設置於該基板上,該第一鎳銅鈦層設置於該金屬層遠離該基板的一側;以及一感應層,設置於該基板的該觸控區,並電性連接該等週邊導線。 According to an embodiment of the present disclosure, a touch panel includes: a substrate defining a touch area and a peripheral area, the peripheral area surrounding the touch area; and a plurality of peripheral wires disposed on the periphery of the substrate a region, wherein the peripheral wires comprise a metal layer and a first nickel-copper-titanium layer, the metal layer is disposed on the substrate, the first nickel-copper-titanium layer is disposed on a side of the metal layer away from the substrate; The sensing layer is disposed on the touch area of the substrate and electrically connected to the peripheral wires.

根據本揭露的一實施例,提供一種觸控面板,包括:一蓋板,定義有一觸控區與一週邊區,該週邊區包圍該觸控區;複數條週邊導線,設置於該蓋板的該週邊區,其中該等週邊導線包括一第一鎳銅鈦層、一金屬層與一第二鎳銅鈦層,該第一鎳銅鈦層設置於該蓋板上,該金屬層設置於該第一鎳銅鈦層上,該第二鎳銅鈦層設置於該金屬層上;以及一感應層,設置於該蓋板的該觸控區,並電性連接該等週邊導線。 According to an embodiment of the present disclosure, a touch panel includes: a cover plate defining a touch area and a peripheral area, the peripheral area surrounding the touch area; and a plurality of peripheral wires disposed on the cover The peripheral region, wherein the peripheral wires comprise a first nickel-copper-titanium layer, a metal layer and a second nickel-copper-titanium layer, the first nickel-copper-titanium layer is disposed on the cover plate, and the metal layer is disposed on the The second nickel-copper-titanium layer is disposed on the metal layer; and a sensing layer is disposed on the touch area of the cover and electrically connected to the peripheral wires.

為讓本揭露之上述目的、特徵及優點能更明顯易懂,下文特舉一較佳實施例,並配合所附的圖式,作詳細說明如下。 The above described objects, features and advantages of the present invention will become more apparent from the following description.

10、100‧‧‧觸控面板 10, 100‧‧‧ touch panel

12‧‧‧基板 12‧‧‧Substrate

14、140‧‧‧觸控區 14, 140‧‧ ‧ touch area

16、160‧‧‧週邊區 16, 160‧‧‧ surrounding area

18、18’、180‧‧‧週邊導線 18, 18’, 180‧‧‧ peripheral conductors

20、200‧‧‧金屬層 20, 200‧‧‧ metal layer

22、220‧‧‧第一鎳銅鈦層 22, 220‧‧‧ first nickel-copper-titanium layer

24、240‧‧‧感應層 24, 240‧‧ ‧ sensing layer

26、260‧‧‧第二鎳銅鈦層 26, 260‧‧‧ second nickel-copper-titanium layer

28、280‧‧‧第一感應電極 28, 280‧‧‧ first sensing electrode

30、300‧‧‧第二感應電極 30, 300‧‧‧second sensing electrode

32、320‧‧‧第一感應電極延伸的第一方向 32, 320‧‧‧ First direction of the first sensing electrode extension

34、340‧‧‧第二感應電極延伸的第二方向 34, 340‧‧‧ second direction of the second sensing electrode extension

36、360‧‧‧第一導電單元 36, 360‧‧‧ first conductive unit

38、38’、38”、38'''、380、380”‧‧‧架橋導線 38, 38', 38", 38''', 380, 380" ‧ ‧ bridge wires

40、400‧‧‧絕緣單元 40,400‧‧‧Insulation unit

42、420‧‧‧第二金屬層 42, 420‧‧‧ second metal layer

44、440‧‧‧第三鎳銅鈦層 44, 440‧‧‧ third nickel-copper-titanium layer

46、460‧‧‧第四鎳銅鈦層 46, 460‧‧‧ fourth nickel-copper-titanium layer

48、480‧‧‧第三金屬層 48, 480‧‧‧ third metal layer

50、500‧‧‧第五鎳銅鈦層 50, 500‧‧‧ fifth nickel-copper-titanium layer

52、520‧‧‧第六鎳銅鈦層 52, 520‧‧‧ sixth nickel-copper-titanium layer

120‧‧‧蓋板 120‧‧‧ cover

250‧‧‧油墨層或有色光阻層 250‧‧‧Ink layer or colored photoresist layer

第1圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖;第2圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖;第3圖係根據本揭露的一實施例,一種感應電極結構態樣的上視圖;第4圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖;第5圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖;第6圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖; 第7圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖;第8圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖;第9圖係根據本揭露的一實施例,一種感應電極結構態樣的上視圖;第10圖係根據本揭露的一實施例,一種觸控面板的剖面示意圖。 1 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure; FIG. 2 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure; and FIG. 3 is an implementation according to the present disclosure. For example, a top view of a structure of a sensing electrode; FIG. 4 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure; and FIG. 5 is a cross section of a touch panel according to an embodiment of the present disclosure. FIG. 6 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure; 7 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure; FIG. 8 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure; and FIG. 9 is an implementation according to the present disclosure. For example, a top view of a structure of a sensing electrode; FIG. 10 is a schematic cross-sectional view of a touch panel according to an embodiment of the present disclosure.

根據本揭露的一實施例,一種觸控面板,描述於第1圖。第1圖為上述觸控面板的剖面示意圖。 According to an embodiment of the present disclosure, a touch panel is described in FIG. 1 . FIG. 1 is a schematic cross-sectional view of the touch panel.

請參閱第1圖,提供一種觸控面板10。觸控面板10包括:一基板12,定義有一觸控區14與一週邊區16,週邊區16包圍觸控區14;複數條週邊導線18,設置於基板12的週邊區16,其中週邊導線18包括一金屬層20與一第一鎳銅鈦層22,金屬層20設置於基板12上,第一鎳銅鈦層22設置於金屬層20遠離基板12的一側,即金屬層20是夾設於基板12與第一鎳銅鈦層22之間;以及一感應層24,設置於基板12的觸控區14,並電性連接週邊導線18。 Referring to FIG. 1 , a touch panel 10 is provided. The touch panel 10 includes a substrate 12 defining a touch area 14 and a peripheral area 16 . The peripheral area 16 surrounds the touch area 14 . The plurality of peripheral wires 18 are disposed on the peripheral area 16 of the substrate 12 , wherein the peripheral wires 18 are disposed. A metal layer 20 and a first nickel-copper-titanium layer 22 are disposed. The metal layer 20 is disposed on the substrate 12. The first nickel-copper-titanium layer 22 is disposed on a side of the metal layer 20 away from the substrate 12, that is, the metal layer 20 is disposed. Between the substrate 12 and the first nickel-copper-titanium layer 22; and a sensing layer 24 disposed on the touch region 14 of the substrate 12 and electrically connected to the peripheral wires 18.

在部分實施例中,基板12可包括一玻璃基板或一薄膜基板。 In some embodiments, the substrate 12 can include a glass substrate or a film substrate.

鎳銅鈦(nickel-copper-titanium,NCT)合金,具有低阻抗,對玻璃、薄膜等基材具備高附著力以及抗氧化、抗腐 蝕等特性。其相比於鉬材料電阻率更低,同時抗氧化腐蝕能力更強,可以以更薄的厚度就起到相同的抗氧化腐蝕效果。在部分實施例中,第一鎳銅鈦層22的厚度介於10~30奈米,較佳是介於15~25奈米,更佳是為20奈米。第一鎳銅鈦層22可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35~50重量百分比的鎳、4~10重量百分比的銅、44~55重量百分比的鈦。 Nickel-copper-titanium (NCT) alloy with low impedance, high adhesion to substrates such as glass and film, and oxidation and corrosion resistance Characteristics such as eclipse. Compared with the molybdenum material, it has lower resistivity and stronger anti-oxidation and corrosion resistance, and can achieve the same anti-oxidation effect with a thinner thickness. In some embodiments, the first nickel-copper-titanium layer 22 has a thickness of 10 to 30 nm, preferably 15 to 25 nm, and more preferably 20 nm. The first nickel-copper-titanium layer 22 may comprise nickel-copper-titanium alloy in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35-50 weight percent nickel, 4-10 weight. Percentage of copper, 44 to 55 weight percent titanium.

在部分實施例中,金屬層20可為銅、鋁、金或銀,綜合材料成本、電阻率、附著力、蝕刻速率等因素,金屬層20的材料較佳為銅,其厚度為120~150nm,就可使週邊導線18的面電阻符合觸控面板的要求(小於等於0.3歐姆)。 In some embodiments, the metal layer 20 may be copper, aluminum, gold or silver. The material cost, resistivity, adhesion, etching rate and the like are comprehensive. The material of the metal layer 20 is preferably copper, and the thickness thereof is 120-150 nm. The surface resistance of the peripheral wires 18 can be made to meet the requirements of the touch panel (less than or equal to 0.3 ohms).

在部分實施例中,與第1圖不同之處在於,金屬層20與基板12之間更包括設置有一第二鎳銅鈦層26,形成週邊導線18’,如第2圖所示。第二鎳銅鈦層26主要用以提升金屬層20與基板12之間的附著力,其厚度介於10~30奈米,較佳是介於15~25奈米,更佳是為20奈米。第二鎳銅鈦層26可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the difference from FIG. 1 is that a second nickel-copper-titanium layer 26 is further disposed between the metal layer 20 and the substrate 12 to form a peripheral lead 18', as shown in FIG. The second nickel-copper-titanium layer 26 is mainly used to enhance the adhesion between the metal layer 20 and the substrate 12, and the thickness thereof is between 10 and 30 nm, preferably between 15 and 25 nm, and more preferably 20 nm. Meter. The second nickel-copper-titanium layer 26 may comprise nickel-copper-titanium alloy in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35% to 50% nickel, 4% to 10%. % copper, 44% to 55% titanium.

在部分實施例中,第1圖與第2圖中的感應層24可由單一方向延伸的感應電極所構成,例如沿X方向或沿Y方向延伸(未圖示)。在此實施例中,上述感應電極可由透明導電材料所構成,例如銦錫氧化物(indium tin oxide,ITO)、銦鋅氧化物(indium zinc oxide,IZO)、鎘錫氧化物(cadmium tin oxide,CTO)或摻雜鋁鋅氧化物(aluminum-doped zinc oxide,AZO)、金屬網格(metal mesh)或奈米銀線(SNW)。 In some embodiments, the sensing layer 24 in FIGS. 1 and 2 can be formed by a sensing electrode extending in a single direction, for example, extending in the X direction or in the Y direction (not shown). In this embodiment, the sensing electrode may be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (cadmium tin oxide). CTO) or doped aluminum-doped zinc oxide (AZO), metal mesh (metal mesh) or nano silver wire (SNW).

在部分實施例中,感應層24可包括複數條第一感應電極28與複數條第二感應電極30,第一感應電極28沿一第一方向32延伸,例如沿X方向延伸,第二感應電極30沿一第二方向34延伸,例如沿Y方向延伸,且第一感應電極28與第二感應電極30相交,如第3圖所示。第3圖為第一感應電極28與第二感應電極30結構態樣的上視圖。 In some embodiments, the sensing layer 24 can include a plurality of first sensing electrodes 28 and a plurality of second sensing electrodes 30. The first sensing electrodes 28 extend along a first direction 32, for example, extending in the X direction, and the second sensing electrodes 30 extends in a second direction 34, such as in the Y direction, and the first sensing electrode 28 intersects the second sensing electrode 30, as shown in FIG. FIG. 3 is a top view of the first sensing electrode 28 and the second sensing electrode 30 in a structural form.

在此實施例中,第一感應電極28包括複數個第一導電單元36與複數條架橋導線38,架橋導線38連接第一導電單元36。第一感應電極28的第一導電單元36與第二感應電極30可由透明導電材料所構成,例如銦錫氧化物(indium tin oxide,ITO)、銦鋅氧化物(indium zinc oxide,IZO)、鎘錫氧化物(cadmium tin oxide,CTO)或摻雜鋁鋅氧化物(aluminum-doped zinc oxide,AZO)、金屬網格(metal mesh)或奈米銀線(SNW)。 In this embodiment, the first sensing electrode 28 includes a plurality of first conductive units 36 and a plurality of bridge wires 38, and the bridge wires 38 are connected to the first conductive unit 36. The first conductive unit 36 and the second sensing electrode 30 of the first sensing electrode 28 may be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium. Cadmium tin oxide (CTO) or aluminum-doped zinc oxide (AZO), metal mesh or nano silver wire (SNW).

在部分實施例中,第一感應電極28與第二感應電極30之間更包括設置有複數個絕緣單元40,以使第一感應電極28與第二感應電極30之間電性絕緣,請同時參照第1、2圖。絕緣單元40可由透明絕緣材料所構成。 In some embodiments, the first sensing electrode 28 and the second sensing electrode 30 further include a plurality of insulating units 40 to electrically insulate between the first sensing electrode 28 and the second sensing electrode 30. Refer to Figures 1 and 2. The insulating unit 40 may be composed of a transparent insulating material.

在部分實施例中,架橋導線38設置於絕緣單元40上。架橋導線38包括一第二金屬層42與一第三鎳銅鈦層44,第二金屬層42設置於絕緣單元40上,第三鎳銅鈦層44設置於第二金屬層42上,如第1、2圖所示。第二金屬層42可為銅、鋁、金或銀,較佳可為銅。第三鎳銅鈦層44的厚度介於10~30奈米,較佳是介於15~25奈米,更佳是為20奈米。第三鎳銅鈦層44可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT) 中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the bridging conductors 38 are disposed on the insulating unit 40. The bridging conductor 38 includes a second metal layer 42 and a third nickel-copper-titanium layer 44. The second metal layer 42 is disposed on the insulating unit 40, and the third nickel-copper-titanium layer 44 is disposed on the second metal layer 42. 1, 2 shown. The second metal layer 42 can be copper, aluminum, gold or silver, preferably copper. The thickness of the third nickel-copper-titanium layer 44 is between 10 and 30 nm, preferably between 15 and 25 nm, more preferably 20 nm. The third nickel-copper-titanium layer 44 may comprise nickel-copper-titanium alloy in various ratios. In a preferred embodiment, nickel-copper-titanium (NCT) The ratio of medium nickel copper to titanium is 35% to 50% nickel, 4% to 10% copper, and 44% to 55% titanium.

在部分實施例中,與第1、2圖不同之處在於,第二金屬層42與絕緣單元40之間更包括設置有一第四鎳銅鈦層46,形成架橋導線38’,如第4、5圖所示。第四鎳銅鈦層46的厚度介於10~30奈米,較佳是介於15~25奈米,更佳是為20奈米。第四鎳銅鈦層46可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the difference between the second metal layer 42 and the insulating unit 40 is further provided with a fourth nickel-copper-titanium layer 46 to form a bridging conductor 38', as in the fourth embodiment. Figure 5 shows. The thickness of the fourth nickel-copper-titanium layer 46 is between 10 and 30 nm, preferably between 15 and 25 nm, more preferably 20 nm. The fourth nickel-copper-titanium layer 46 may comprise nickel-copper-titanium alloy in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35% to 50% nickel, 4% to 10%. % copper, 44% to 55% titanium.

在部分實施例中,與第1圖不同之處在於,將架橋導線38”設置於絕緣單元40與基板12之間,如第6圖所示。圖中,架橋導線38”包括一第三金屬層48與一第五鎳銅鈦層50,第三金屬層48設置於基板12上,第五鎳銅鈦層50設置於第三金屬層48上。第三金屬層48可為銅、鋁、金或銀,較佳是為銅。第五鎳銅鈦層50的厚度介於10~30奈米,較佳是介於15~25奈米,更佳是為20奈米。第五鎳銅鈦層50可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the difference from FIG. 1 is that the bridging conductor 38" is disposed between the insulating unit 40 and the substrate 12, as shown in FIG. 6. In the figure, the bridging conductor 38" includes a third metal. The layer 48 and a fifth nickel-copper-titanium layer 50 are disposed on the substrate 12, and the fifth nickel-copper-titanium layer 50 is disposed on the third metal layer 48. The third metal layer 48 can be copper, aluminum, gold or silver, preferably copper. The fifth nickel-copper-titanium layer 50 has a thickness of 10 to 30 nm, preferably 15 to 25 nm, more preferably 20 nm. The fifth nickel-copper-titanium layer 50 may comprise nickel-copper-titanium alloy in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35%~50% nickel, 4%~10. % copper, 44% to 55% titanium.

在部分實施例中,與第6圖不同之處在於,第三金屬層48與基板12之間更包括設置有一第六鎳銅鈦層52,形成架橋導線38''',如第7圖所示。第六鎳銅鈦層52的厚度介於10~30奈米,較佳是介於15~25奈米,更佳是為20奈米。第六鎳銅鈦層52可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、 44%~55%的鈦。 In some embodiments, the difference from FIG. 6 is that a third nickel-copper-titanium layer 52 is further disposed between the third metal layer 48 and the substrate 12 to form a bridge wire 38 ′′′, as shown in FIG. 7 . Show. The sixth nickel-copper-titanium layer 52 has a thickness of 10 to 30 nm, preferably 15 to 25 nm, more preferably 20 nm. The sixth nickel-copper-titanium layer 52 may comprise nickel-copper-titanium alloy in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35%~50% nickel, 4%~10. % copper, 44% to 55% titanium.

以第1圖為例,因週邊導線18採用的第一鎳銅鈦層22與金屬層20的蝕刻速度差異較小,且整體厚度較薄,蝕刻不盡和過度側蝕的問題得到極大的改善,週邊導線18的線寬和線距都可以縮減至更小的範圍。在部分實施例中,週邊導線18的線寬介於5~20微米,較佳為10微米。週邊導線18的線距介於5~20微米,較佳為10微米。 Taking FIG. 1 as an example, the difference in etching speed between the first nickel-copper-titanium layer 22 and the metal layer 20 used in the peripheral wires 18 is small, and the overall thickness is thin, and the problems of incomplete etching and excessive side etching are greatly improved. The line width and line spacing of the peripheral wires 18 can be reduced to a smaller range. In some embodiments, the perimeter conductor 18 has a line width of between 5 and 20 microns, preferably 10 microns. The peripheral wire 18 has a line pitch of 5 to 20 microns, preferably 10 microns.

根據本揭露的一實施例,一種觸控面板,描述於第8圖。第8圖為上述觸控面板的剖面示意圖。 According to an embodiment of the present disclosure, a touch panel is described in FIG. FIG. 8 is a schematic cross-sectional view of the touch panel.

請參閱第8圖,提供一種觸控面板100。觸控面板100包括:一蓋板120,定義有一觸控區140與一週邊區160,週邊區160包圍觸控區140;複數條週邊導線180,設置於蓋板120的週邊區160,其中週邊導線180包括一第一鎳銅鈦層220、一金屬層200與一第二鎳銅鈦層260,第一鎳銅鈦層220設置於蓋板120上,金屬層200設置於第一鎳銅鈦層220遠離蓋板120的一側,第二鎳銅鈦層260設置於金屬層200遠離第一鎳銅鈦層220的一側,即金屬層200是夾設於第一鎳銅鈦層220與第二鎳銅鈦層260之間;以及一感應層240,設置於蓋板120的觸控區140,並電性連接週邊導線180。 Referring to FIG. 8 , a touch panel 100 is provided. The touch panel 100 includes a cover 120 defining a touch area 140 and a peripheral area 160. The peripheral area 160 surrounds the touch area 140. The plurality of peripheral wires 180 are disposed in the peripheral area 160 of the cover 120. The wire 180 includes a first nickel-copper-titanium layer 220, a metal layer 200 and a second nickel-copper-titanium layer 260. The first nickel-copper-titanium layer 220 is disposed on the cap plate 120, and the metal layer 200 is disposed on the first nickel-copper-titanium layer. The layer 220 is away from the side of the cover plate 120, and the second nickel-copper-titanium layer 260 is disposed on a side of the metal layer 200 away from the first nickel-copper-titanium layer 220, that is, the metal layer 200 is sandwiched between the first nickel-copper-titanium layer 220 and A second nickel-copper-titanium layer 260; and a sensing layer 240 are disposed on the touch area 140 of the cover 120 and electrically connected to the peripheral wires 180.

在部分實施例中,金屬層200可為銅、鋁、金或銀,較佳可為銅。 In some embodiments, the metal layer 200 can be copper, aluminum, gold or silver, preferably copper.

在部分實施例中,第一鎳銅鈦層220與第二鎳銅鈦層260的厚度介於10~30奈米,較佳是介於15~25奈米,更佳為20奈米。第一鎳銅鈦層220與第二鎳銅鈦層260可包含多種比例 的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the first nickel copper titanium layer 220 and the second nickel copper titanium layer 260 have a thickness of 10 to 30 nm, preferably 15 to 25 nm, more preferably 20 nm. The first nickel copper titanium layer 220 and the second nickel copper titanium layer 260 may comprise various ratios Nickel-copper-titanium alloy, in a preferred embodiment, nickel-copper-titanium (NCT) nickel-copper-titanium ratio of 35% to 50% nickel, 4% to 10% copper, 44% to 55% titanium .

在部分實施例中,週邊導線180與蓋板120之間更包括設置有一油墨層或一有色光阻層250,以遮擋週邊導線180。 In some embodiments, an ink layer or a colored photoresist layer 250 is further disposed between the peripheral lead 180 and the cover 120 to block the peripheral lead 180.

在部分實施例中,第8圖中的感應層240可由單一方向延伸的感應電極所構成,例如沿X方向或沿Y方向延伸(未圖示)。在此實施例中,上述感應電極可由透明導電材料所構成,例如銦錫氧化物(indium tin oxide,ITO)、銦鋅氧化物(indium zinc oxide,IZO)、鎘錫氧化物(cadmium tin oxide,CTO)或摻雜鋁鋅氧化物(aluminum-doped zinc oxide,AZO)、金屬網格(metal mesh)或奈米銀線(SNW)。 In some embodiments, the sensing layer 240 in FIG. 8 may be formed of a sensing electrode extending in a single direction, for example, extending in the X direction or in the Y direction (not shown). In this embodiment, the sensing electrode may be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (cadmium tin oxide). CTO) or doped aluminum-doped zinc oxide (AZO), metal mesh (metal mesh) or nano silver wire (SNW).

在部分實施例中,感應層240可包括第一感應電極280與第二感應電極300,第一感應電極280沿一第一方向320延伸,例如沿X方向延伸,第二感應電極300沿一第二方向340延伸,例如沿Y方向延伸,且第一感應電極280與第二感應電極300相交,如第9圖所示。第9圖為第一感應電極280與第二感應電極300結構態樣的上視圖。 In some embodiments, the sensing layer 240 can include a first sensing electrode 280 and a second sensing electrode 300. The first sensing electrode 280 extends along a first direction 320, for example, along the X direction, and the second sensing electrode 300 extends along the first The two directions 340 extend, for example, extending in the Y direction, and the first sensing electrode 280 intersects the second sensing electrode 300, as shown in FIG. FIG. 9 is a top view showing a structural aspect of the first sensing electrode 280 and the second sensing electrode 300.

在此實施例中,第一感應電極280包括複數個第一導電單元360與複數條架橋導線380,架橋導線380連接第一導電單元360。第一感應電極280的第一導電單元360與第二感應電極300可由透明導電材料所構成,例如銦錫氧化物(indium tin oxide,ITO)、銦鋅氧化物(indium zinc oxide,IZO)、鎘錫氧化物(cadmium tin oxide,CTO)或摻雜鋁鋅氧化物 (aluminum-doped zinc oxide,AZO)、金屬網格(metal mesh)或奈米銀線(SNW)。 In this embodiment, the first sensing electrode 280 includes a plurality of first conductive units 360 and a plurality of bridge wires 380, and the bridge wires 380 are connected to the first conductive unit 360. The first conductive unit 360 and the second sensing electrode 300 of the first sensing electrode 280 may be formed of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium. Cadmium tin oxide (CTO) or doped aluminum zinc oxide (aluminum-doped zinc oxide, AZO), metal mesh or nano silver wire (SNW).

在部分實施例中,第一感應電極280與第二感應電極300之間更包括設置有複數個絕緣單元400,以使第一感應電極280與第二感應電極300之間電性絕緣,請同時參照第8圖。絕緣單元400可由透明絕緣材料所構成。 In some embodiments, the first sensing electrode 280 and the second sensing electrode 300 further include a plurality of insulating units 400 to electrically insulate between the first sensing electrode 280 and the second sensing electrode 300. Refer to Figure 8. The insulating unit 400 may be composed of a transparent insulating material.

在部分實施例中,架橋導線380設置於絕緣單元400上,如第8圖所示。圖中,架橋導線380包括一第三鎳銅鈦層440、一第二金屬層420與一第四鎳銅鈦層460,第三鎳銅鈦層440設置於絕緣單元400上,第二金屬層420設置於第三鎳銅鈦層440遠離絕緣單元400的一側,第四鎳銅鈦層460設置於第二金屬層420遠離第三鎳銅鈦層440的一側,即第二金屬層420是夾設於第三鎳銅鈦層440與第四鎳銅鈦層460之間。第二金屬層420可為銅、鋁、金或銀,較佳可為銅。第三鎳銅鈦層440與第四鎳銅鈦層460的厚度介於10~30奈米,較佳是介於15~25奈米,更佳為20奈米。第三鎳銅鈦層440與第四鎳銅鈦層460可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the bridging conductors 380 are disposed on the insulating unit 400 as shown in FIG. In the figure, the bridge wire 380 includes a third nickel-copper-titanium layer 440, a second metal layer 420 and a fourth nickel-copper-titanium layer 460. The third nickel-copper-titanium layer 440 is disposed on the insulating unit 400, and the second metal layer 420 is disposed on a side of the third nickel-copper-titanium layer 440 away from the insulating unit 400, and the fourth nickel-copper-titanium layer 460 is disposed on a side of the second metal layer 420 away from the third nickel-copper-titanium layer 440, that is, the second metal layer 420. It is sandwiched between the third nickel-copper-titanium layer 440 and the fourth nickel-copper-titanium layer 460. The second metal layer 420 can be copper, aluminum, gold or silver, preferably copper. The third nickel-copper-titanium layer 440 and the fourth nickel-copper-titanium layer 460 have a thickness of 10 to 30 nm, preferably 15 to 25 nm, more preferably 20 nm. The third nickel-copper-titanium layer 440 and the fourth nickel-copper-titanium layer 460 may comprise nickel-copper-titanium alloys in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35% to 50. % nickel, 4% to 10% copper, 44% to 55% titanium.

在部分實施例中,與第8圖不同之處在於,將架橋導線380”設置於絕緣單元400與蓋板120之間,如第10圖所示。圖中,架橋導線380”包括一第五鎳銅鈦層500、一第三金屬層480與一第六鎳銅鈦層520,第五鎳銅鈦層500設置於蓋板120上,第三金屬層480設置於第五鎳銅鈦層500遠離蓋板120的一 側,第六鎳銅鈦層520設置於第三金屬層480遠離第五鎳銅鈦層500的一側,即第三金屬層480是夾設於第五鎳銅鈦層500與第六鎳銅鈦層520之間。第三金屬層480可為銅、鋁、金或銀,較佳可為銅。第五鎳銅鈦層500與第六鎳銅鈦層520的厚度介於10~30奈米,較佳是介於15~25奈米,更佳為20奈米。第五鎳銅鈦層500與第六鎳銅鈦層520可包含多種比例的鎳銅鈦合金,在一較佳實施例中,鎳銅鈦(NCT)中鎳銅鈦的比例為35%~50%的鎳、4%~10%的銅、44%~55%的鈦。 In some embodiments, the difference from FIG. 8 is that the bridging conductor 380" is disposed between the insulating unit 400 and the cover 120, as shown in FIG. 10. In the figure, the bridging conductor 380" includes a fifth A nickel-copper-titanium layer 500, a third metal layer 480 and a sixth nickel-copper-titanium layer 520, a fifth nickel-copper-titanium layer 500 is disposed on the cap plate 120, and a third metal layer 480 is disposed on the fifth nickel-copper-titanium layer 500. One away from the cover 120 The sixth nickel-copper-titanium layer 520 is disposed on a side of the third metal layer 480 away from the fifth nickel-copper-titanium layer 500, that is, the third metal layer 480 is sandwiched between the fifth nickel-copper-titanium layer 500 and the sixth nickel-copper layer. Between the titanium layers 520. The third metal layer 480 can be copper, aluminum, gold or silver, preferably copper. The fifth nickel copper titanium layer 500 and the sixth nickel copper titanium layer 520 have a thickness of 10 to 30 nm, preferably 15 to 25 nm, more preferably 20 nm. The fifth nickel-copper-titanium layer 500 and the sixth nickel-copper-titanium layer 520 may comprise nickel-copper-titanium alloys in various proportions. In a preferred embodiment, the ratio of nickel-copper-titanium in nickel-copper-titanium (NCT) is 35%~50. % nickel, 4% to 10% copper, 44% to 55% titanium.

以第8圖為例,在部分實施例中,週邊導線180的線寬介於5~20微米,較佳為10微米。週邊導線180的線距介於5~20微米,較佳為10微米。 Taking FIG. 8 as an example, in some embodiments, the peripheral conductor 180 has a line width of 5 to 20 micrometers, preferably 10 micrometers. The peripheral wire 180 has a line pitch of 5 to 20 microns, preferably 10 microns.

根據本揭露的一實施例,一種觸控面板的製造方法,請參閱第5圖。 According to an embodiment of the present disclosure, a method of manufacturing a touch panel is described in FIG.

此處,僅重點揭露週邊導線18’與架橋導線38’的製作,其餘元件依照一般半導體製程製作即可。對於週邊導線18’的製作,先濺鍍第二鎳銅鈦層26於基板12上。之後,濺鍍金屬層20於第二鎳銅鈦層26上。之後,濺鍍第一鎳銅鈦層22於金屬層20上。之後,對上述層疊結構進行蝕刻,即可製作出週邊導線18’。 Here, only the fabrication of the peripheral conductor 18' and the bridge conductor 38' is focused on, and the remaining components may be fabricated in accordance with a general semiconductor process. For the fabrication of the peripheral lead 18', a second nickel-copper-titanium layer 26 is sputtered onto the substrate 12. Thereafter, a metal layer 20 is sputtered onto the second nickel-copper-titanium layer 26. Thereafter, a first nickel-copper-titanium layer 22 is sputtered onto the metal layer 20. Thereafter, the laminated structure is etched to form a peripheral lead 18'.

同樣地,對於架橋導線38’的製作,先濺鍍第四鎳銅鈦層46於絕緣單元40上。之後,濺鍍第二金屬層42於第四鎳銅鈦層46上。之後,濺鍍第三鎳銅鈦層44於第二金屬層42上。之後,對上述層疊結構進行蝕刻,即可製作出架橋導線38’。 Similarly, for the fabrication of the bridging conductor 38', a fourth nickel-copper-titanium layer 46 is sputtered onto the insulating unit 40. Thereafter, a second metal layer 42 is sputtered onto the fourth nickel-copper-titanium layer 46. Thereafter, a third nickel-copper-titanium layer 44 is sputtered onto the second metal layer 42. Thereafter, the laminated structure is etched to form a bridging conductor 38'.

在部分實施例中,週邊導線18’與架橋導線38’可同 時製作或分開製作。 In some embodiments, the perimeter conductor 18' can be the same as the bridge conductor 38'. Made or made separately.

本揭露利用鎳銅鈦層的低電阻率與優異抗氧化特性、高附著力、與金、銀、銅、鋁特別是銅金屬的蝕刻速度差異較小的優勢所在,以雙層堆疊結構,鎳銅鈦層/金屬層(特別是鎳銅鈦層/銅金屬層)取代鉬/鋁/鉬結構製作週邊導線或架橋導線,可使週邊導線或架橋導線的厚度降低,提高觸控面板整體的平整度,同時,週邊導線或架橋導線的鎳銅鈦層和金屬層對於相同蝕刻液的蝕刻速率差異降低,有效解決蝕刻過程中的蝕刻不盡或側蝕問題,實現細線路、細間距的技術成果。 The present disclosure utilizes the advantages of low resistivity of nickel-copper-titanium layer and excellent oxidation resistance, high adhesion, and small difference in etching speed with gold, silver, copper, aluminum, and especially copper metal, in a two-layer stacked structure, nickel The copper-titanium layer/metal layer (especially the nickel-copper-titanium layer/copper metal layer) replaces the molybdenum/aluminum/molybdenum structure to make a peripheral wire or a bridge wire, which can reduce the thickness of the peripheral wire or the bridge wire, and improve the overall flatness of the touch panel. At the same time, the nickel-copper-titanium layer and the metal layer of the peripheral wire or the bridge wire reduce the etching rate difference of the same etching liquid, effectively solve the problem of incomplete etching or side etching in the etching process, and realize the technical result of fine line and fine pitch. .

本揭露以三層堆疊結構(例如鎳銅鈦層/銅金屬層/鎳銅鈦層)製作週邊導線或架橋導線,其中與基板或油墨層接觸的鎳銅鈦層可有效提升銅金屬層與基板或油墨層之間的附著力。 The disclosure discloses a peripheral wire or a bridge wire by a three-layer stacked structure (for example, a nickel-copper-titanium layer/copper metal layer/nickel-copper-titanium layer), wherein the nickel-copper-titanium layer in contact with the substrate or the ink layer can effectively enhance the copper metal layer and the substrate. Or adhesion between ink layers.

本揭露細線路設計可應用於雙玻璃單層線路觸控面板(GG(SITO))、雙玻璃雙層線路觸控面板(GG(DITO))、單片式玻璃觸控面板(one glass solution,OGS)等相關結構的產品。 The thin circuit design can be applied to a double glass single layer line touch panel (GG (SITO)), a double glass double layer line touch panel (GG (DITO)), a one-piece glass touch panel (one glass solution, OGS) and other related structures.

雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the scope of the present invention, and any one of ordinary skill in the art can make any changes without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims.

10‧‧‧觸控面板 10‧‧‧Touch panel

12‧‧‧基板 12‧‧‧Substrate

14‧‧‧觸控區 14‧‧‧ touch area

16‧‧‧週邊區 16‧‧‧The surrounding area

18‧‧‧週邊導線 18‧‧‧Boundary conductors

20‧‧‧金屬層 20‧‧‧metal layer

22‧‧‧第一鎳銅鈦層 22‧‧‧First nickel-copper-titanium layer

24‧‧‧感應層 24‧‧‧Sense layer

28‧‧‧第一感應電極 28‧‧‧First sensing electrode

30‧‧‧第二感應電極 30‧‧‧Second sensing electrode

36‧‧‧第一導電單元 36‧‧‧First Conductive Unit

38‧‧‧架橋導線 38‧‧‧Bridge conductor

40‧‧‧絕緣單元 40‧‧‧Insulation unit

42‧‧‧第二金屬層 42‧‧‧Second metal layer

44‧‧‧第三鎳銅鈦層 44‧‧‧The third nickel-copper-titanium layer

Claims (21)

一種觸控面板,包括:一基板,定義有一觸控區與一週邊區,該週邊區包圍該觸控區;複數條週邊導線,設置於該基板的該週邊區,其中該等週邊導線包括一金屬層與一第一鎳銅鈦層,該金屬層設置於該基板上,該第一鎳銅鈦層設置於該金屬層遠離該基板的一側;以及一感應層,設置於該基板的該觸控區,並電性連接該等週邊導線。 A touch panel includes: a substrate defining a touch area and a peripheral area, the peripheral area surrounding the touch area; a plurality of peripheral wires disposed in the peripheral area of the substrate, wherein the peripheral wires include a a metal layer and a first nickel copper titanium layer disposed on the substrate, the first nickel copper titanium layer disposed on a side of the metal layer away from the substrate; and a sensing layer disposed on the substrate The touch area is electrically connected to the peripheral wires. 如申請專利範圍第1項所述的觸控面板,其中該金屬層的材料為銅、鋁、金或銀。 The touch panel of claim 1, wherein the metal layer is made of copper, aluminum, gold or silver. 如申請專利範圍第1項所述的觸控面板,其中該第一鎳銅鈦層中含有35~50重量百分比的鎳、4~10重量百分比的銅、44~55重量百分比的鈦。 The touch panel of claim 1, wherein the first nickel-copper-titanium layer contains 35 to 50% by weight of nickel, 4 to 10% by weight of copper, and 44 to 55% by weight of titanium. 如申請專利範圍第1項所述的觸控面板,其中該第一鎳銅鈦層的厚度介於10~30奈米。 The touch panel of claim 1, wherein the first nickel-copper-titanium layer has a thickness of 10 to 30 nm. 如申請專利範圍第1項所述的觸控面板,其中該第一鎳銅鈦層的厚度介於15~25奈米。 The touch panel of claim 1, wherein the first nickel-copper-titanium layer has a thickness of 15 to 25 nm. 如申請專利範圍第1項所述的觸控面板,更包括一第二鎳銅鈦層,設置於該金屬層與該基板之間。 The touch panel of claim 1, further comprising a second nickel-copper-titanium layer disposed between the metal layer and the substrate. 如申請專利範圍第6項所述的觸控面板,其中該第二鎳銅鈦層的厚度介於10~30奈米。 The touch panel of claim 6, wherein the second nickel-copper-titanium layer has a thickness of 10 to 30 nm. 如申請專利範圍第7項所述的觸控面板,其中該第二鎳 銅鈦層的厚度介於15~25奈米。 The touch panel of claim 7, wherein the second nickel The thickness of the copper-titanium layer is between 15 and 25 nm. 如申請專利範圍第1項所述的觸控面板,其中該等週邊導線的線寬介於5~20微米。 The touch panel of claim 1, wherein the peripheral wires have a line width of 5 to 20 microns. 如申請專利範圍第1項所述的觸控面板,其中該等週邊導線的線距介於5~20微米。 The touch panel of claim 1, wherein the peripheral wires have a line pitch of 5 to 20 micrometers. 如申請專利範圍第1項所述的觸控面板,其中該感應層包括複數條第一感應電極與複數條第二感應電極,該第一感應電極沿一第一方向延伸,該第二感應電極沿一第二方向延伸,且該第一感應電極與該第二感應電極相交,更包括複數個絕緣單元,設置於該第一感應電極與該第二感應電極之間,該第一感應電極包括複數個第一導電單元與複數條架橋導線,該等架橋導線連接該等第一導電單元。 The touch panel of claim 1, wherein the sensing layer comprises a plurality of first sensing electrodes and a plurality of second sensing electrodes, the first sensing electrodes extending along a first direction, the second sensing electrodes And extending in a second direction, the first sensing electrode and the second sensing electrode intersecting, further comprising a plurality of insulating units disposed between the first sensing electrode and the second sensing electrode, the first sensing electrode comprising a plurality of first conductive units and a plurality of bridge wires, the bridge wires connecting the first conductive units. 如申請專利範圍第11項所述的觸控面板,其中該等架橋導線設置於該絕緣單元上。 The touch panel of claim 11, wherein the bridge wires are disposed on the insulation unit. 如申請專利範圍第12項所述的觸控面板,其中該等架橋導線包括一第二金屬層與一第三鎳銅鈦層,該第二金屬層設置於該絕緣單元上,該第三鎳銅鈦層設置於該第二金屬層上。 The touch panel of claim 12, wherein the bridge wires comprise a second metal layer and a third nickel-copper-titanium layer, the second metal layer is disposed on the insulating unit, the third nickel A copper-titanium layer is disposed on the second metal layer. 如申請專利範圍第13項所述的觸控面板,其中該第二金屬層為銅、鋁、金或銀。 The touch panel of claim 13, wherein the second metal layer is copper, aluminum, gold or silver. 如申請專利範圍第13項所述的觸控面板,更包括一第四鎳銅鈦層,設置於該第二金屬層與該絕緣單元之間。 The touch panel of claim 13, further comprising a fourth nickel-copper-titanium layer disposed between the second metal layer and the insulating unit. 如申請專利範圍第15項所述的觸控面板,其中該第三 鎳銅鈦層與該第四鎳銅鈦層的厚度介於10~30奈米。 The touch panel of claim 15, wherein the third The thickness of the nickel-copper-titanium layer and the fourth nickel-copper-titanium layer is between 10 and 30 nm. 如申請專利範圍第11項所述的觸控面板,其中該等架橋導線設置於該絕緣單元與該基板之間。 The touch panel of claim 11, wherein the bridge wires are disposed between the insulating unit and the substrate. 如申請專利範圍第17項所述的觸控面板,其中該等架橋導線包括一第三金屬層與一第五鎳銅鈦層,該第三金屬層設置於該基板上,該第五鎳銅鈦層設置於該第三金屬層上。 The touch panel of claim 17, wherein the bridge wires comprise a third metal layer and a fifth nickel-copper-titanium layer, the third metal layer is disposed on the substrate, the fifth nickel-copper A titanium layer is disposed on the third metal layer. 如申請專利範圍第18項所述的觸控面板,其中該第三金屬層為銅、鋁、金或銀。 The touch panel of claim 18, wherein the third metal layer is copper, aluminum, gold or silver. 如申請專利範圍第18項所述的觸控面板,更包括一第六鎳銅鈦層,設置於該三金屬層與該基板之間。 The touch panel of claim 18, further comprising a sixth nickel-copper-titanium layer disposed between the three metal layers and the substrate. 如申請專利範圍第20項所述的觸控面板,其中該第五鎳銅鈦層與該第六鎳銅鈦層的厚度介於10~30奈米。 The touch panel of claim 20, wherein the fifth nickel-copper-titanium layer and the sixth nickel-copper-titanium layer have a thickness of 10 to 30 nm.
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