TWI588913B - 採用整合腔過濾器之倒裝晶片及相關組件、系統及方法 - Google Patents

採用整合腔過濾器之倒裝晶片及相關組件、系統及方法 Download PDF

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TWI588913B
TWI588913B TW105126546A TW105126546A TWI588913B TW I588913 B TWI588913 B TW I588913B TW 105126546 A TW105126546 A TW 105126546A TW 105126546 A TW105126546 A TW 105126546A TW I588913 B TWI588913 B TW I588913B
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Taiwan
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signal
input
output
aperture
transmission line
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TW105126546A
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Chinese (zh)
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TW201810442A (zh
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約翰 宗勳 李
宋勇奎
卓威明
崔杉喬
曉南 張
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高通公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H01P7/065—Cavity resonators integrated in a substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1817—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a cavity resonator
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/0243—Printed circuits associated with mounted high frequency components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/216—Waveguides, e.g. strip lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/243—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for decoupling, e.g. bypass capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguides (AREA)
TW105126546A 2015-09-14 2016-08-19 採用整合腔過濾器之倒裝晶片及相關組件、系統及方法 TWI588913B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/853,802 2015-09-14
US14/853,802 US9443810B1 (en) 2015-09-14 2015-09-14 Flip-chip employing integrated cavity filter, and related components, systems, and methods

Publications (2)

Publication Number Publication Date
TWI588913B true TWI588913B (zh) 2017-06-21
TW201810442A TW201810442A (zh) 2018-03-16

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TW105126546A TWI588913B (zh) 2015-09-14 2016-08-19 採用整合腔過濾器之倒裝晶片及相關組件、系統及方法

Country Status (11)

Country Link
US (2) US9443810B1 (https=)
EP (1) EP3350874B1 (https=)
JP (1) JP6648262B2 (https=)
KR (1) KR102118558B1 (https=)
CN (1) CN108028453B (https=)
BR (1) BR112018004941B1 (https=)
CA (1) CA2993991A1 (https=)
ES (1) ES2763034T3 (https=)
HU (1) HUE046872T2 (https=)
TW (1) TWI588913B (https=)
WO (1) WO2017048500A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443810B1 (en) 2015-09-14 2016-09-13 Qualcomm Incorporated Flip-chip employing integrated cavity filter, and related components, systems, and methods
CN108701680B (zh) * 2016-03-31 2023-05-30 英特尔公司 带有使用金属层和通孔的电磁干扰屏蔽的半导体封装
EP3679385B1 (en) * 2017-09-07 2022-10-26 Amherst College Loop-gap resonators for spin resonance spectroscopy
US11527696B2 (en) * 2017-10-05 2022-12-13 Google Llc Low footprint resonator in flip chip geometry
CN111226348B (zh) * 2017-10-17 2022-03-11 康普技术有限责任公司 用于具有多层基板的微波和毫米波通信系统的垂直过渡
JP6965732B2 (ja) * 2017-12-26 2021-11-10 Tdk株式会社 バンドパスフィルタ
CN109219299B (zh) * 2018-10-31 2023-08-18 重庆山淞信息技术有限公司 一种多滤波功能的滤波器
CN109768357B (zh) * 2019-02-25 2020-12-08 广东曼克维通信科技有限公司 一种传输零点可控的基片集成波导滤波器
CN114285391B (zh) * 2021-03-23 2025-12-16 偲百创(深圳)科技有限公司 射频滤波器及其制造方法
CN119785837A (zh) * 2021-08-26 2025-04-08 株式会社东芝 盘装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297716B1 (en) * 1999-12-16 2001-10-02 Lockheed Martin Corporation Q-switched cavity multiplier
US20100309073A1 (en) * 2009-06-09 2010-12-09 Ahmadreza Rofougaran Method and system for cascaded leaky wave antennas on an integrated circuit, integrated circuit package, and/or printed circuit board
US20120299170A1 (en) * 2011-05-26 2012-11-29 Daniel Kehrer Module and Method of Manufacturing a Module
US9123983B1 (en) * 2012-07-20 2015-09-01 Hittite Microwave Corporation Tunable bandpass filter integrated circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130483A (en) 1997-03-05 2000-10-10 Kabushiki Kaisha Toshiba MMIC module using flip-chip mounting
JP2002026611A (ja) * 2000-07-07 2002-01-25 Nec Corp フィルタ
DE10164494B9 (de) * 2001-12-28 2014-08-21 Epcos Ag Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung
DE102004014018B3 (de) 2004-03-19 2005-08-11 Forschungsverbund Berlin E.V. Mikrowellenantenne für in Flip-Chip-Technologie hergestellte Halbleiterbaugruppen
WO2010026990A1 (ja) 2008-09-05 2010-03-11 三菱電機株式会社 高周波回路パッケージおよびセンサモジュール
WO2010139366A1 (en) 2009-06-04 2010-12-09 Telefonaktiebolaget L M Ericsson (Publ) A package resonator cavity
KR101077011B1 (ko) * 2009-06-09 2011-10-26 서울대학교산학협력단 미세가공 공동 공진기와 그 제조 방법 및 이를 이용한 대역통과 필터와 발진기
JP5499879B2 (ja) * 2010-04-26 2014-05-21 三菱電機株式会社 高周波フィルタ
US9398694B2 (en) * 2011-01-18 2016-07-19 Sony Corporation Method of manufacturing a package for embedding one or more electronic components
CN202120888U (zh) * 2011-06-21 2012-01-18 成都嘉纳海威科技有限责任公司 一种超宽带多功能变频芯片
US8866291B2 (en) 2012-02-10 2014-10-21 Raytheon Company Flip-chip mounted microstrip monolithic microwave integrated circuits (MMICs)
CN203434139U (zh) * 2013-08-16 2014-02-12 深圳华远微电科技有限公司 倒装芯片式滤波器封装结构
US10062494B2 (en) * 2014-11-03 2018-08-28 Qorvo Us, Inc. Apparatus with 3D inductors
US9443810B1 (en) 2015-09-14 2016-09-13 Qualcomm Incorporated Flip-chip employing integrated cavity filter, and related components, systems, and methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297716B1 (en) * 1999-12-16 2001-10-02 Lockheed Martin Corporation Q-switched cavity multiplier
US20100309073A1 (en) * 2009-06-09 2010-12-09 Ahmadreza Rofougaran Method and system for cascaded leaky wave antennas on an integrated circuit, integrated circuit package, and/or printed circuit board
US20120299170A1 (en) * 2011-05-26 2012-11-29 Daniel Kehrer Module and Method of Manufacturing a Module
US9123983B1 (en) * 2012-07-20 2015-09-01 Hittite Microwave Corporation Tunable bandpass filter integrated circuit

Also Published As

Publication number Publication date
JP2018526933A (ja) 2018-09-13
KR20180054703A (ko) 2018-05-24
CN108028453B (zh) 2019-12-27
CA2993991A1 (en) 2017-03-23
EP3350874A1 (en) 2018-07-25
ES2763034T3 (es) 2020-05-26
US9812752B2 (en) 2017-11-07
WO2017048500A1 (en) 2017-03-23
CN108028453A (zh) 2018-05-11
US20170077574A1 (en) 2017-03-16
TW201810442A (zh) 2018-03-16
JP6648262B2 (ja) 2020-02-14
US9443810B1 (en) 2016-09-13
HUE046872T2 (hu) 2020-04-28
BR112018004941A2 (https=) 2018-10-02
BR112018004941B1 (pt) 2024-01-16
KR102118558B1 (ko) 2020-06-03
EP3350874B1 (en) 2019-09-18

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