TWI588602B - Resist composition, and method for producing resist pattern - Google Patents

Resist composition, and method for producing resist pattern Download PDF

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TWI588602B
TWI588602B TW102134821A TW102134821A TWI588602B TW I588602 B TWI588602 B TW I588602B TW 102134821 A TW102134821 A TW 102134821A TW 102134821 A TW102134821 A TW 102134821A TW I588602 B TWI588602 B TW I588602B
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TW201426169A (en
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清水貴弘
森貴敬
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東京應化工業股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

光阻組成物及光阻圖型之形成方法 Method for forming photoresist composition and photoresist pattern

本發明為有關光阻組成物及光阻圖型之形成方法。 The invention relates to a method for forming a photoresist composition and a photoresist pattern.

微影蝕刻技術中,一般多以例如,於基板上形成由光阻材料所形成之光阻膜,對該光阻膜,介由形成有特定圖型之遮罩,以光、電子線等輻射線進行選擇性曝光、施以顯影處理等方式,而於前述光阻膜上形成具有特定形狀之光阻圖型的步驟的方式進行。 In the lithography technique, for example, a photoresist film formed of a photoresist material is formed on a substrate, and the photoresist film is irradiated with light or an electron beam through a mask formed with a specific pattern. The line is subjected to selective exposure, development treatment, or the like, and the step of forming a photoresist pattern having a specific shape on the photoresist film is performed.

曝光部份變化為具有溶解於顯影液之特性之光阻材料稱為正型,曝光部份變化為不具溶解於顯影液之特性之光阻材料稱為負型。 The photoresist having a change in the exposed portion is a positive resistive material having a property of being dissolved in a developing solution, and a resistive material having a characteristic in which the exposed portion is not dissolved in the developing solution is referred to as a negative type.

近年來,於半導體元件或液晶顯示元件之製造中,伴隨微影蝕刻技術之進步而急速地使圖型邁向微細化。 In recent years, in the manufacture of semiconductor elements or liquid crystal display elements, the pattern has been rapidly refined with the progress of the lithography etching technology.

微細化之方法,一般為將曝光光線來源予以短波長化(高能量化)之方式進行。具體而言,以往為使用以g線、i線為代表之紫外線,現在則已開始使用KrF準分子雷射, 或ArF準分子雷射進行半導體元件之量產。又,對於較該些準分子雷射為更短波長(高能量)之電子線、EUV(極紫外線)或X線等,亦已開始進行研究。 The method of miniaturization is generally carried out in such a manner that the source of the exposure light is shortened (high energy). Specifically, in the past, ultraviolet rays represented by g-line and i-line have been used, and KrF excimer lasers have been used now. Or ArF excimer lasers for mass production of semiconductor components. Further, studies have been started on electron beams, EUV (extreme ultraviolet rays) or X-rays which are shorter wavelengths (high energy) than these excimer lasers.

光阻材料中,則尋求一種對該些曝光光線源 具有感度、可重現微細尺寸圖型之解析性等微影蝕刻特性。 In photoresist materials, a source of exposure light is sought It has lithographic etching characteristics such as sensitivity and reproducibility of resolving fine-size patterns.

滿足該些要求之光阻材料,以往為使用含有經由酸的作用而對顯影液之溶解性產生變化之基材成份,與經由曝光而產生酸之酸產生劑成份的化學增強型光阻組成物。例如上述顯影液為鹼顯影液(鹼顯影製程)之情形,正型之化學增強型光阻組成物,一般為使用含有經由酸之作用而增大對鹼顯影液之溶解性的樹脂成份(基礎樹脂),與酸產生劑成份者。使用該光阻組成物所形成之光阻膜,於光阻圖型形成中進行選擇性曝光時,曝光部中,酸產生劑成份會產生酸,並該經由酸之作用而增大基礎樹脂之極性,使曝光部對鹼顯影液為可溶。因此,經由鹼顯影時,未曝光部以圖型方式殘留,形成正型圖型。另一方面,使用含有有機溶劑的顯影液(有機系顯影液)所進行之溶劑顯影製程之情形,因基礎樹脂之極性增大,而相對地降低對有機系顯影液的溶解性,故光阻膜的未曝光部被有機系顯影液所溶解、去除,曝光部以圖型方式殘留,而形成負型之光阻圖型。依此方式形成負型之光阻圖型的溶劑顯影製程亦稱為負型顯影製程(專利文獻1)。 A photoresist material which satisfies these requirements has conventionally been a chemically-enhanced photoresist composition containing a substrate component which changes the solubility of a developer by an action of an acid and an acid generator component which generates an acid by exposure. . For example, in the case where the above developing solution is an alkali developing solution (alkali developing process), a positive type chemically amplified resist composition generally uses a resin component containing a solubility enhancing effect on an alkali developing solution by an action of an acid (basis Resin), with the acid generator component. When the photoresist film formed by the photoresist composition is selectively exposed in the formation of a photoresist pattern, an acid generator component generates an acid in the exposed portion, and the base resin is increased by the action of an acid. The polarity is such that the exposed portion is soluble to the alkali developer. Therefore, when developing by alkali, the unexposed portion remains in a pattern form to form a positive pattern. On the other hand, in the case of a solvent developing process using a developing solution (organic developing solution) containing an organic solvent, since the polarity of the base resin is increased, the solubility to the organic developing solution is relatively lowered, so the photoresist is formed. The unexposed portion of the film is dissolved and removed by the organic developing solution, and the exposed portion remains in a pattern to form a negative resist pattern. A solvent developing process for forming a negative resist pattern in this manner is also referred to as a negative developing process (Patent Document 1).

又,近年來,化學增強型光阻組成物中,亦 有添加光反應型抑制劑之提案(例如參照專利文獻2~3)。光反應型抑制劑為,由陰離子與陽離子所形成之鹽,於被曝光前,其具有經由離子交換反應而捕集酸產生劑等產生酸之抑制(Quenching)作用,經曝光而分解而失去該抑制作用。因此,對於使用含有光反應型抑制劑的化學增強型光阻組成物所形成之光阻膜進行曝光時,於曝光部中,光反應型抑制劑受到酸產生劑等所產生之酸而失去鹼性的同時,未曝光部中,光反應型抑制劑則會捕集(Trap)酸,曝光部向未曝光部擴散之酸受到抑制等,而可提高微影蝕刻之特性。 Moreover, in recent years, chemically enhanced photoresist compositions have also been There is a proposal to add a photoreactive inhibitor (see, for example, Patent Documents 2 to 3). The photoreactive inhibitor is a salt formed of an anion and a cation, and has a quenching effect of trapping an acid generator or the like via an ion exchange reaction before being exposed, and is decomposed by exposure to lose the Inhibition. Therefore, when a photoresist film formed using a chemically-enhanced photoresist composition containing a photoreactive type inhibitor is exposed, in the exposed portion, the photoreactive inhibitor loses alkali by an acid generated by an acid generator or the like. In the unexposed portion, the photoreactive inhibitor traps the acid, and the acid which is diffused to the unexposed portion by the exposed portion is suppressed, and the characteristics of the lithography can be improved.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2009-025723號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-025723

[專利文獻2]日本特開平6-266100號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 6-266100

[專利文獻3]國際公開第2010/147079號 [Patent Document 3] International Publication No. 2010/147079

於尋求微影蝕刻技術更加進步、應用領域更為擴大等目的中,將更深一層尋求各種微影蝕刻特性之改善。 In the pursuit of further improvement in the lithography etching technology and the expansion of the application field, further improvement of various lithography etching characteristics will be sought.

本發明為,以提供一種使用新穎之光反應性抑制劑,而可改善感度及微影蝕刻特性之光阻組成物,及 使用該光阻組成物之光阻圖型之形成方法為發明之目的。 The present invention is to provide a photoresist composition which can improve sensitivity and lithographic etching characteristics using a novel photoreactive inhibitor, and The formation method of the photoresist pattern using the photoresist composition is an object of the invention.

本發明之第一態樣為,一種經由曝光而產生酸,經由酸的作用而對顯影液之溶解性產生變化之光阻組成物,其為含有經由酸的作用而對顯影液之溶解性產生變化之樹脂成份(A),與光反應性抑制劑(D0)所形成,其特徵為,前述光反應性抑制劑(D0)為含有下述通式(d0)所表示之化合物(D0-1)。 A first aspect of the present invention is a photoresist composition which generates an acid by exposure and which changes the solubility of a developer by an action of an acid, and contains a solubility of a developer through an action of an acid. The changed resin component (A) is formed with a photoreactive inhibitor (D0), wherein the photoreactive inhibitor (D0) is a compound represented by the following formula (d0) (D0-1) ).

[式中,R1、R2為可具有取代基之碳數1~10之烷基,R3、R4為可具有取代基之碳數2~10之烷基,R3與R4,可與其所鍵結之硫原子共同形成環,X-為對陰離子]。 [wherein, R 1 and R 2 are an alkyl group having 1 to 10 carbon atoms which may have a substituent, and R 3 and R 4 are an alkyl group having 2 to 10 carbon atoms which may have a substituent, and R 3 and R 4 , It may form a ring together with the sulfur atom to which it is bonded, and X - is a pair of anions].

本發明之第二態樣為,一種光阻圖型之形成 方法,其特徵為,包含使用前述第一態樣之光阻組成物形成光阻膜之步驟、使前述光阻膜曝光之步驟,及使前述光阻膜顯影以形成光阻圖型之步驟。 A second aspect of the invention is the formation of a photoresist pattern The method comprises the steps of: forming a photoresist film using the photoresist composition of the first aspect, exposing the photoresist film, and developing the photoresist film to form a photoresist pattern.

本發明為,提供一種使用新穎之光反應性抑 制劑時,可改善感度及微影蝕刻特性的光阻組成物,及使用該光阻組成物之光阻圖型之形成方法。 The present invention provides a novel photoreaction suppression In the preparation, a photoresist composition capable of improving sensitivity and lithographic etching characteristics, and a method of forming a photoresist pattern using the photoresist composition.

[實施發明之形態] [Formation of the Invention]

本說明書及本申請專利範圍中,「脂肪族」 係指對芳香族為相對性之概念,係定義為不具有芳香族性之基、化合物等之意。 In this specification and the scope of this patent application, "aliphatic" It refers to the concept of relativity to aromatics and is defined as a group or compound having no aromaticity.

「烷基」,於無特別限定下,為包含直鏈狀、支鏈狀及環狀1價飽和烴基之基。 The "alkyl group" is a group containing a linear, branched or cyclic monovalent saturated hydrocarbon group, unless otherwise specified.

「伸烷基」,於無特別限定下,為包含直鏈狀、支鏈狀及環狀2價飽和烴基之基。烷氧基中之烷基亦為相同之內容。 The "alkylene group" is a group containing a linear, branched or cyclic divalent saturated hydrocarbon group, unless otherwise specified. The alkyl group in the alkoxy group is also the same.

「鹵化烷基」係指,烷基的氫原子中之一部份或全部被鹵素原子所取代之基,該鹵素原子,例如,氟原子、氯原子、溴原子、碘原子。 The "halogenated alkyl group" means a group in which a part or all of a hydrogen atom of an alkyl group is substituted by a halogen atom, for example, a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.

「氟化烷基」或「氟化伸烷基」係指,烷基或伸烷基的氫原子中之一部份或全部被氟原子所取代之基。 The "fluorinated alkyl group" or "fluorinated alkyl group" means a group in which a part or all of a hydrogen atom of an alkyl group or an alkyl group is substituted by a fluorine atom.

「結構單位」係指,構成高分子化合物(樹脂、聚合物、共聚物)之單體單位(monomer unit)之意。 The "structural unit" means a monomer unit constituting a polymer compound (resin, polymer, copolymer).

「丙烯酸酯所衍生之結構單位」係指,丙烯酸酯之乙烯性雙鍵經開裂所構成之結構單位之意。 The "structural unit derived from acrylate" means the structural unit composed of the cleavage of the ethylenic double bond of the acrylate.

「丙烯酸酯」為,丙烯酸(CH2=CH-COOH)之羧基末端的氫原子被有機基所取代之化合物。 The "acrylate" is a compound in which a hydrogen atom at the carboxyl terminal of acrylic acid (CH 2 =CH-COOH) is substituted with an organic group.

丙烯酸酯中,α位的碳原子所鍵結之氫原子可被取代基所取代。取代該α位的碳原子所鍵結之氫原子的取代基(Rα)為,氫原子以外之原子或基,例如碳數1~5之烷基、碳數1~5之鹵化烷基、羥烷基等。又,丙烯酸酯之α位的碳原子,於無特別限定下,係指羰基所鍵結之碳原子之意。 In the acrylate, a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent. The substituent (R α ) of the hydrogen atom to which the carbon atom of the α-position is bonded is an atom or a group other than a hydrogen atom, for example, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms. Hydroxyalkyl and the like. Further, the carbon atom at the α position of the acrylate is not particularly limited, and means a carbon atom to which a carbonyl group is bonded.

以下、α位的碳原子所鍵結之氫原子被取代基所取代之丙烯酸酯亦稱為α取代丙烯酸酯。又,包括丙烯酸酯與α取代丙烯酸酯亦稱為「(α取代)丙烯酸酯」。 Hereinafter, the acrylate in which the hydrogen atom to which the carbon atom bonded to the α-position is substituted by a substituent is also referred to as an α-substituted acrylate. Further, the inclusion of an acrylate and an α-substituted acrylate is also referred to as "(α-substituted) acrylate".

「羥基苯乙烯或羥基苯乙烯衍生物所衍生之結構單位」係指,羥基苯乙烯或羥基苯乙烯衍生物的乙烯性雙鍵經開裂所構成之結構單位之意。 The "structural unit derived from a hydroxystyrene or a hydroxystyrene derivative" means a structural unit composed of a vinyl double bond of a hydroxystyrene or a hydroxystyrene derivative which is cleaved.

「羥基苯乙烯衍生物」係指,包含羥基苯乙烯之α位的氫原子被烷基、鹵化烷基等其他取代基所取代者,與該些之衍生物的概念。該些之衍生物,例如,α位的氫原子可被取代基所取代之羥基苯乙烯的羥基中之氫原子被有機基所取代者、α位的氫原子可被取代基所取代之羥基苯乙烯之苯環上,鍵結羥基以外之取代基所得者等。又,α位(α位之碳原子),於無特別限定下,係指苯環所鍵結之碳原子之意。 The "hydroxystyrene derivative" means a concept in which a hydrogen atom containing an α-position of a hydroxystyrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group, and derivatives thereof. The derivatives, for example, a hydrogen atom in which the hydrogen atom at the α position may be substituted by a substituent, and a hydrogen atom in the hydroxyl group of the hydroxystyrene may be substituted with an organic group, and a hydrogen atom at the α position may be substituted with a hydroxybenzene group. On the benzene ring of ethylene, a substituent other than a hydroxyl group is bonded, and the like. Further, the α-position (the carbon atom in the α-position) means, unless otherwise specified, the meaning of the carbon atom to which the benzene ring is bonded.

取代羥基苯乙烯的α位之氫原子的取代基,例如,與前述α取代丙烯酸酯中,被列舉作為α位之取代基之基為相同之內容等。 The substituent of the hydrogen atom at the α-position of the substituted hydroxystyrene is, for example, the same as the substituent of the α-substituted acrylate.

「乙烯基安息香酸或乙烯基安息香酸衍生物所衍生之 結構單位」係指,乙烯基安息香酸或乙烯基安息香酸衍生物的乙烯性雙鍵經開裂所構成之結構單位之意。 "Derived from vinyl benzoic acid or vinyl benzoic acid derivatives "Structural unit" means the structural unit formed by the cracking of the vinyl double bond of the vinyl benzoic acid or the vinyl benzoic acid derivative.

「乙烯基安息香酸衍生物」係指,包含乙烯基安息香酸的α位之氫原子被烷基、鹵化烷基等其他取代基所取代之基,與該些之衍生物之概念。該些之衍生物,例如,α位的氫原子可被取代基所取代之乙烯基安息香酸的羧基之氫原子被有機基所取代者、α位的氫原子可被取代基所取代之乙烯基安息香酸之苯環上,鍵結羥基及羧基以外之取代基者等。又,α位(α位之碳原子),於無特別限定下,係指苯環所鍵結之碳原子之意。 The "vinyl benzoic acid derivative" means a group containing a hydrogen atom of the alpha position of vinyl benzoic acid substituted with another substituent such as an alkyl group or a halogenated alkyl group, and the concept of these derivatives. The derivatives, for example, a hydrogen atom of a vinyl benzoic acid in which the hydrogen atom at the alpha position may be substituted by an organic group, and a hydrogen atom at the alpha position may be substituted with a substituent. On the benzene ring of benzoic acid, a substituent other than a hydroxyl group or a carboxyl group is bonded. Further, the α-position (the carbon atom in the α-position) means, unless otherwise specified, the meaning of the carbon atom to which the benzene ring is bonded.

「苯乙烯」係指,包含苯乙烯及苯乙烯之α位的氫原子被烷基、鹵化烷基等其他之取代基所取代之概念。 "Styrene" means a concept in which a hydrogen atom containing an α-position of styrene and styrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group.

「苯乙烯所衍生之結構單位」、「苯乙烯衍生物所衍生之結構單位」係指,苯乙烯或苯乙烯衍生物之乙烯性雙鍵經開裂所構成之結構單位之意。 The "structural unit derived from styrene" and "structural unit derived from a styrene derivative" mean a structural unit composed of a vinyl double bond of styrene or a styrene derivative which is cleaved.

作為上述α位之取代基的烷基,以直鏈狀或支鏈狀烷基為佳,具體而言,例如,碳數1~5之烷基(甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基)等。 The alkyl group which is a substituent of the above α position is preferably a linear or branched alkyl group, and specifically, for example, an alkyl group having 1 to 5 carbon atoms (methyl, ethyl, propyl, isopropyl) Base, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl) and the like.

又,作為α位之取代基的鹵化烷基,具體而言,例如,上述「作為α位之取代基的烷基」之氫原子的一部份或全部被鹵素原子所取代之基等。該鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。 In addition, the halogenated alkyl group which is a substituent of the α-position is, for example, a group in which a part or all of a hydrogen atom of the above-mentioned "alkyl group as a substituent at the α-position" is substituted by a halogen atom. The halogen atom is, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, and particularly preferably a fluorine atom.

又,作為α位之取代基的羥烷基,具體而言,例如,上述「作為α位之取代基的烷基」的氫原子之一部份或全部被羥基所取代之基等。該羥烷基中,羥基之數目,以1~5為佳,以1為最佳。 In addition, the hydroxyalkyl group which is a substituent of the α-position is, for example, a group in which a part or all of a hydrogen atom of the above-mentioned "alkyl group as a substituent at the α-position" is substituted with a hydroxyl group. In the hydroxyalkyl group, the number of hydroxyl groups is preferably from 1 to 5, and most preferably from 1.

記載「可具有取代基」之情形中,為包含氫原子(-H)被1價之基所取代之情形,與伸甲基(-CH2-)被2價之基所取代之情形等二者。 In the case where "the substituent may be substituted", the case where the hydrogen atom (-H) is substituted with a monovalent group is substituted, and the methyl group (-CH 2 -) is substituted with a divalent group. By.

「曝光」為包含全部輻射線照射之概念。 "Exposure" is the concept of including all radiation exposure.

本發明光阻組成物為,一種經由曝光而產生酸,經由酸的作用而對顯影液之溶解性產生變化之光阻組成物,其為含有經由酸的作用而對顯影液之溶解性產生變化之樹脂成份(A),與光反應性抑制劑(D0),其特徵為,前述光反應性抑制劑(D0)為含有下述通式(d0)所表示之化合物(D0-1)。 The photoresist composition of the present invention is a photoresist composition which generates an acid by exposure and which changes the solubility of the developer by the action of an acid, and changes the solubility of the developer by the action of an acid. The resin component (A) and the photoreactive inhibitor (D0) are characterized in that the photoreactive inhibitor (D0) is a compound (D0-1) represented by the following formula (d0).

[式中,R1、R2為可具有取代基之碳數1~10之烷基,R3、R4為可具有取代基之碳數2~10之烷基,R3與R4,可與其所鍵結之硫原子共同形成環,X-為對陰離子]。 [wherein, R 1 and R 2 are an alkyl group having 1 to 10 carbon atoms which may have a substituent, and R 3 and R 4 are an alkyl group having 2 to 10 carbon atoms which may have a substituent, and R 3 and R 4 , It may form a ring together with the sulfur atom to which it is bonded, and X - is a pair of anions].

本發明之光阻組成物為一種經由曝光而產生 酸,經由酸的作用而對顯影液之溶解性產生變化之光阻組成物,且含有經由酸的作用而對顯影液之溶解性產生變化之樹脂成份(A)(以下,亦稱為「(A)成份」)者。 The photoresist composition of the present invention is produced by exposure The acid component which changes the solubility of the developer by the action of an acid, and contains the resin component (A) which changes the solubility of the developer by the action of an acid (hereinafter, also referred to as "( A) Ingredients").

使用該光阻組成物形成光阻膜,並對該光阻膜進行選擇性曝光時,於曝光部中會產生酸,經由該酸之作用而使(A)成份對顯影液之溶解性產生變化的同時,未曝光部中,因(A)成份對顯影液之溶解性並未產生變化,而使曝光部與未曝光部之間對顯影液產生溶解性之差異。因此,使該光阻膜顯影時,該光阻組成物為正型之情形時,曝光部被溶解去除而形成正型之光阻圖型,該光阻組成物為負型之情形時,未曝光部被溶解去除而形成負型之光阻圖型。 When the resist film is formed using the photoresist composition, and the resist film is selectively exposed, an acid is generated in the exposed portion, and the solubility of the component (A) to the developer is changed by the action of the acid. At the same time, in the unexposed portion, the solubility of the developer (A) does not change, and the difference in solubility between the exposed portion and the unexposed portion is caused to the developer. Therefore, when the photoresist film is developed, when the photoresist composition is positive, the exposed portion is dissolved and removed to form a positive photoresist pattern, and when the photoresist composition is negative, The exposed portion is dissolved and removed to form a negative photoresist pattern.

本說明書中,曝光部被溶解去除而形成正型光阻圖型之光阻組成物稱為正型光阻組成物,未曝光部被溶解去除而形成負型光阻圖型之光阻組成物稱為負型光阻組成物。 In the present specification, a photoresist composition in which a photosensitive portion is dissolved and removed to form a positive photoresist pattern is referred to as a positive photoresist composition, and an unexposed portion is dissolved and removed to form a photoresist pattern of a negative photoresist pattern. It is called a negative photoresist composition.

本發明之光阻組成物,可為正型光阻組成物亦可、負型光阻組成物亦可。 The photoresist composition of the present invention may be a positive photoresist composition or a negative photoresist composition.

又,本發明之光阻組成物,可為於光阻圖型形成時的顯影處理為使用鹼顯影液之鹼顯影製程用亦可、該顯影處理中,使用含有有機溶劑之顯影液(有機系顯影液)的溶劑顯影製程用亦可。 Further, in the photoresist composition of the present invention, the development process at the time of forming the photoresist pattern may be an alkali development process using an alkali developer, and in the development process, a developer containing an organic solvent may be used (organic system). The solvent developing process of the developer) may also be used.

本發明之光阻組成物,為具有經由曝光而產生酸之酸發生能力者,其可由(A)成份經曝光而產生酸者亦可、由不與(A)成份為同時添加之添加劑成份經曝光所 產生之酸者亦可。 The photoresist composition of the present invention is an acid generating ability capable of generating an acid by exposure, which may be obtained by exposing an acid to the component (A), and adding an additive component which is not added simultaneously with the component (A). Exposure office The acid produced can also be.

具體而言,本發明之光阻組成物為,(1)可為含有經由曝光而產生酸之酸產生劑成份(B)(以下,亦稱為「(B)成份」)者亦可;(2)(A)成份為經由曝光而產生酸之成份者亦可;(3)(A)成份為經由曝光而產生酸之成份者,且再含有(B)成份者亦可。 Specifically, the photoresist composition of the present invention may be (1) an acid generator component (B) (hereinafter, also referred to as "(B) component") containing an acid generated by exposure; 2) (A) The component may be a component which generates an acid by exposure; (3) The component (A) is a component which generates an acid by exposure, and may further contain (B) component.

即,上述(2)及(3)之情形,(A)成份為「經由曝光而產生酸,且,經由酸的作用而對顯影液之溶解性產生變化之基材成份」。(A)成份為經由曝光而產生酸,且,經由酸的作用而對顯影液之溶解性產生變化之基材成份之情形,後述之(A1)成份,是經由曝光而產生酸,且,經由酸的作用而對顯影液之溶解性產生變化之高分子化合物為佳。該些高分子化合物,可使用具有經由曝光而產生酸之結構單位的樹脂。經由曝光而產生酸之結構單位,可使用公知之成份。 In other words, in the case of the above (2) and (3), the component (A) is a "substrate component which generates an acid by exposure and which changes the solubility of the developer by the action of an acid". (A) The component is a substrate component which generates an acid by exposure and changes the solubility of the developer by the action of an acid. The component (A1) described later generates an acid by exposure, and A polymer compound which changes the solubility of the developer by the action of an acid is preferred. As the polymer compound, a resin having a structural unit which generates an acid by exposure can be used. A well-known component can be used for the structural unit which generates an acid by exposure.

本發明之光阻組成物,以上述(1)之情形為特佳。 The photoresist composition of the present invention is particularly preferable in the case of the above (1).

<樹脂成份(A)> <Resin component (A)>

經由酸之作用而對鹼之溶解性產生變化之樹脂成份(A),並未有特別之限制,其可使用經由酸之作用而對鹼之溶解性產生變化之任意樹脂。其中,又以含有由酚醛清漆樹脂(Anv1)、聚羥基苯乙烯樹脂(Aphs1),及丙烯酸樹脂(Aac1)所成群所選出之至少一種的樹脂為佳。 The resin component (A) which changes the solubility of the alkali by the action of an acid is not particularly limited, and any resin which changes the solubility of the alkali by the action of an acid can be used. Among them, a resin containing at least one selected from the group consisting of novolac resin (Anv1), polyhydroxystyrene resin (Aphs1), and acrylic resin (Aac1) is preferred.

樹脂成份(A)為,含有經由酸之作用而使極性產生變化之酸分解性基。 The resin component (A) is an acid-decomposable group which changes its polarity by the action of an acid.

「酸分解性基」為,經由酸之作用,使該酸分解性基的結構中的至少一部份的鍵結產生開裂之具有酸分解性之基。 The "acid-decomposable group" is an acid-decomposable group which causes cracking of at least a part of the structure of the acid-decomposable group by the action of an acid.

經由酸之作用而增大極性之酸分解性基,例如,經由酸之作用而分解,生成極性基之基等。 The acid-decomposable group which increases the polarity by the action of an acid, for example, is decomposed by the action of an acid to form a group of a polar group or the like.

極性基,例如羧基、羥基、胺基、磺基(-SO3H)等。 該些之中,又以結構中含有-OH之極性基(以下,亦稱為「含OH之極性基」)為佳,以羧基或羥基為佳,以羧基為特佳。 A polar group such as a carboxyl group, a hydroxyl group, an amine group, a sulfo group (-SO 3 H) or the like. Among these, a polar group containing -OH in the structure (hereinafter also referred to as "polar group containing OH") is preferred, and a carboxyl group or a hydroxyl group is preferred, and a carboxyl group is particularly preferred.

酸分解性基,更具體而言,例如,前述極性基被酸解離性基所保護之基(例如含OH之極性基的氫原子被酸解離性基所保護之基)等例示。 The acid-decomposable group is more specifically, for example, a group in which the aforementioned polar group is protected by an acid-dissociable group (for example, a group in which a hydrogen atom of a OH-containing polar group is protected by an acid-cleavable group) is exemplified.

其中,「酸解離性基」係指,(i)經由酸之作用,使該酸解離性基與該酸解離性基隣接之原子之間的鍵結產生開裂之具有酸解離性之基,或(ii)經由酸之作用使一部份鍵結產生開裂之後,再經由生成去碳酸反應之方式,使該酸解離性基與該酸解離性基隣接之原子之間的鍵結產生開裂之基等二者之意。 Here, the "acid dissociable group" means an acid dissociable group which (i) causes a bond between atoms of the acid dissociable group and the acid dissociable group to cause cracking via an action of an acid, or (ii) after a part of the bond is cracked by the action of an acid, and then a bond between the acid dissociable group and the atom adjacent to the acid dissociable group is generated by a decarbonation reaction to generate a cracking basis. And so on.

構成酸分解性基之酸解離性基,必須為極性較經由該酸解離性基之解離所生成之極性基為更低極性之基,如此,經由酸之作用而使該酸解離性基解離之際,將會生成極性較該該酸解離性基為更高極性之極性基,而可增大極 性。其結果,將可增大(A1)成份全體之極性。極性增大時,相對地可使對顯影液之溶解性產生變化,於顯影液為鹼顯影液之情形時,可增大溶解性,顯影液為有機系顯影液之情形時,將可降低溶解性。 The acid dissociable group constituting the acid-decomposable group must be a group having a polarity lower than that of the polar group formed by dissociation of the acid dissociable group, and thus the acid dissociable group is dissociated by the action of an acid. At the same time, a polar group having a polarity higher than the acid dissociable group is generated, and the polar group can be increased. Sex. As a result, the polarity of the entire component (A1) can be increased. When the polarity is increased, the solubility of the developer may be relatively changed. When the developer is an alkali developer, the solubility may be increased. When the developer is an organic developer, the dissolution may be lowered. Sex.

酸解離性基,並未有特別之限定,其可使用目前為止被提案作為化學增強型光阻用之基礎樹脂的酸解離性基之成份。 The acid dissociable group is not particularly limited, and a component which has been proposed as an acid dissociable group of a base resin for chemically amplified photoresist has been used.

前述極性基中,保護羧基或羥基之酸解離性基,例如,下述通式(a1-r-1)所表示之酸解離性基(以下,亦稱為「縮醛型酸解離性基」)等例示。 In the above-mentioned polar group, an acid dissociable group which protects a carboxyl group or a hydroxyl group, for example, an acid dissociable group represented by the following formula (a1-r-1) (hereinafter also referred to as "acetal type acid dissociable group") ) and so on.

[式中,Ra’1、Ra’2為氫原子或烷基,Ra’3為烴基,且Ra’3,與Ra’1、Ra’2之任一者可鍵結形成環]。 [In the formula, Ra' 1 and Ra' 2 are a hydrogen atom or an alkyl group, Ra' 3 is a hydrocarbon group, and Ra' 3 may be bonded to any of Ra' 1 and Ra' 2 to form a ring].

式(a1-r-1)中,Ra’1及Ra’2之中,以至少一者為氫原子者為佳,以兩者為氫原子者為更佳。 In the formula (a1-r-1), among Ra' 1 and Ra' 2 , at least one of them is preferably a hydrogen atom, and both of them are preferably a hydrogen atom.

Ra’1或Ra’2為烷基之情形,該烷基,例如與上述α取代丙烯酸酯之說明中,可與α位之碳原子鍵結之取代基所例示之烷基為相同之內容等,又以碳數1~5之烷基為佳。具體而言,例如,甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等之直鏈 狀或支鏈狀烷基等,又以甲基或乙基為佳,以甲基為特佳。 In the case where Ra' 1 or Ra' 2 is an alkyl group, for example, in the description of the above-mentioned α-substituted acrylate, the alkyl group exemplified by the substituent bonded to the carbon atom of the α-position is the same content, etc. It is preferably an alkyl group having 1 to 5 carbon atoms. Specifically, for example, a linear or branched group of a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group or the like. A chain alkyl group or the like is preferably a methyl group or an ethyl group, and a methyl group is particularly preferred.

式(a1-r-1)中,Ra’3之烴基,例如,直鏈狀、支鏈狀或環狀烷基。該直鏈狀烷基,以碳數為1~5者為佳,以1~4為較佳,以1或2為更佳。具體而言,例如,甲基、乙基、n-丙基、n-丁基、n-戊基等。該些之中,以甲基、乙基或n-丁基為佳,以甲基或乙基為更佳。 In the formula (a1-r-1), the hydrocarbon group of Ra' 3 is, for example, a linear, branched or cyclic alkyl group. The linear alkyl group preferably has a carbon number of 1 to 5, preferably 1 to 4, more preferably 1 or 2. Specifically, for example, a methyl group, an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group or the like. Among these, a methyl group, an ethyl group or an n-butyl group is preferred, and a methyl group or an ethyl group is more preferred.

該支鏈狀烷基,以碳數為3~10者為佳,以3~5為更佳。具體而言,例如,異丙基、異丁基、tert-丁基、異戊基、新戊基等,又以異丙基為最佳。 The branched alkyl group is preferably a carbon number of 3 to 10, more preferably 3 to 5. Specifically, for example, isopropyl, isobutyl, tert-butyl, isopentyl, neopentyl or the like is preferably isopropyl.

該環狀烷基,以碳數3~20者為佳,以4~12為更佳。具體而言,例如,由環戊烷、環己烷等單環鏈烷,或金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。構成環狀烷基之環的碳原子的一部份,可被醚性氧原子(-O-)所取代。 The cyclic alkyl group is preferably a carbon number of 3 to 20, more preferably 4 to 12. Specifically, for example, one monocyclic alkane such as cyclopentane or cyclohexane or one polycyclic alkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane is removed. The base obtained by the above hydrogen atom and the like. A part of the carbon atom constituting the ring of the cyclic alkyl group may be substituted by an etheric oxygen atom (-O-).

Ra’3,與Ra’1、Ra’2任一者鍵結形成環之情形,該環式基,以4~7員環為佳,以4~6員環為更佳。 該環式基之具體例如,四氫吡喃基、四氫呋喃基等。 Ra' 3 , in the case of bonding with any of Ra' 1 and Ra' 2 , the ring base is preferably a 4 to 7 ring, and a 4 to 6 ring is preferred. Specific examples of the cyclic group include, for example, a tetrahydropyranyl group, a tetrahydrofuranyl group and the like.

上述極性基中,保護羧基之酸解離性基,例如,下述通式(a1-r-2)所表示之酸解離性基等例示(下述式(a1-r-2)所表示之酸解離性基中,以烷基所構成者,以下於簡便上,亦稱為「三級烷基酯型酸解離性基」)。 In the above-mentioned polar group, an acid dissociable group which protects a carboxyl group, for example, an acid dissociable group represented by the following general formula (a1-r-2) (an acid represented by the following formula (a1-r-2)) Among the dissociable groups, those which are composed of an alkyl group are hereinafter referred to as "tribasic alkyl ester type acid dissociable group".

[式中,Ra’4~Ra’6各自表示為烴基,Ra’5、Ra’6可相互鍵結形成環]。 [wherein, Ra' 4 to Ra' 6 are each represented by a hydrocarbon group, and Ra' 5 and Ra' 6 may be bonded to each other to form a ring].

Ra’4~Ra’6之烴基,例如與前述Ra’3為相同之內容。 The hydrocarbon group of Ra' 4 ~Ra' 6 is, for example, the same as the aforementioned Ra' 3 .

Ra’4以碳數1~5之烷基為佳。Ra’5與Ra’6為相互鍵結形成環之情形,可例如下述通式(a1-r2-1)所表示之基。 另一方面,Ra’4~Ra’6無相互鍵結,而為獨立之烴基之情形,可例如下述通式(a1-r2-2)所表示之基。 Ra' 4 is preferably an alkyl group having 1 to 5 carbon atoms. Ra' 5 and Ra' 6 are bonded to each other to form a ring, and may be, for example, a group represented by the following formula (a1-r2-1). On the other hand, in the case where Ra' 4 to Ra' 6 are not bonded to each other and are independent hydrocarbon groups, for example, a group represented by the following formula (a1 - r2-2) can be used.

[式中,Ra’10為碳數1~10之烷基,Ra’11為,與Ra’10鍵結之碳原子共同形成脂肪族環式基之基,Ra’12~Ra’14表示各自獨立之烴基]。 [In the formula, Ra' 10 is an alkyl group having 1 to 10 carbon atoms, and Ra' 11 is a group in which a carbon atom bonded to Ra' 10 forms an aliphatic cyclic group, and Ra' 12 ~ Ra' 14 represents each Independent hydrocarbon group].

式(a1-r2-1)中,Ra’10之碳數1~10之烷基中之烷基,以式(a1-r-1)中之Ra’3之直鏈狀或支鏈狀烷基所 列舉之基為佳。式(a1-r2-1)中,Ra’11所構成之脂肪族環式基,以式(a1-r-1)中之Ra’3中的環狀烷基所列舉之基為佳。 In the formula (a1-r2-1), the alkyl group in the alkyl group having 1 to 10 carbon atoms of Ra' 10 is a linear or branched alkane of Ra' 3 in the formula (a1-r-1). The base listed is preferred. In the formula (a1-r2-1), the aliphatic cyclic group constituted by Ra' 11 is preferably a group exemplified by the cyclic alkyl group in Ra' 3 in the formula (a1-r-1).

式(a1-r2-2)中,Ra’12及Ra’14以各自獨立為碳數1~10之烷基為佳,該烷基,以式(a1-r-1)中之Ra’3之直鏈狀或支鏈狀烷基所列舉之基為較佳,以碳數1~5之直鏈狀烷基為更佳,以甲基或乙基為特佳。 In the formula (a1-r2-2), Ra' 12 and Ra' 14 are each independently an alkyl group having 1 to 10 carbon atoms, and the alkyl group is represented by Ra' 3 in the formula (a1-r-1). The group of the linear or branched alkyl group is preferably a group, and a linear alkyl group having 1 to 5 carbon atoms is more preferred, and a methyl group or an ethyl group is particularly preferred.

式(a1-r2-2)中,Ra’13以式(a1-r-1)中之Ra’3之烴基所例示之直鏈狀、支鏈狀或環狀烷基為佳。該些基中,又以Ra’3之環狀烷基所列舉之基為更佳。 In the formula (a1-r2-2), Ra' 13 is preferably a linear, branched or cyclic alkyl group exemplified by the hydrocarbon group of Ra' 3 in the formula (a1-r-1). Among these groups, the group exemplified by the cyclic alkyl group of Ra' 3 is more preferable.

前述式(a1-r2-1)之具體例,例如以下所列舉之內容。以下,「*」表示鍵結鍵。 Specific examples of the above formula (a1-r2-1) are as follows, for example. Hereinafter, "*" indicates a key button.

前述式(a1-r2-2)之具體例,例如以下所列舉之內容。 Specific examples of the above formula (a1 - r2-2) are as follows, for example.

又,上述極性基之中,保護羥基之酸解離性 基,例如,下述通式(a1-r-3)所表示之酸解離性基(以下,方便上亦稱為「三級烷氧羰基酸解離性基」)等例示。 Further, among the above polar groups, the acid dissociation of the protective hydroxyl group is protected. The base is, for example, an acid dissociable group represented by the following formula (a1-r-3) (hereinafter, also referred to as "a tertiary alkoxycarbonyl acid dissociable group").

[式中,Ra’7~Ra’9分別表示烷基]。 [wherein, Ra' 7 ~ Ra' 9 represents an alkyl group, respectively].

式(a1-r-3)中,Ra’7~Ra’9基,以碳數1~5之烷基為佳,以1~3為較佳。 In the formula (a1-r-3), the Ra' 7 ~Ra' 9 group is preferably an alkyl group having 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms.

又,各烷基之合計碳數,以3~7者為佳,以3~5為較佳,以3~4為最佳。 Further, the total carbon number of each alkyl group is preferably from 3 to 7, preferably from 3 to 5, and most preferably from 3 to 4.

[丙烯酸樹脂(Aac1)] [Acrylic Resin (Aac1)]

丙烯酸樹脂(Aac1),可使用含有下述通式(a1-1)~(a1-2)所表示之結構單位的樹脂。 As the acrylic resin (Aac1), a resin containing a structural unit represented by the following general formulae (a1-1) to (a1-2) can be used.

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基。Va1為可具有醚鍵結、胺基甲酸酯鍵結,或醯胺鍵結之2價的烴基,na1為各自獨立之0~2,Ra1為上述式(a1-r-1)~(a1-r-2)所表示之酸解離性基。Wa1為na2+1價之烴基,na2為1~3,Ra2為上述式(a1-r-1)或(a1-r-3)所表示之酸解離性基]。 [In the formula, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms. Va 1 is a divalent hydrocarbon group which may have an ether bond, a urethane bond, or a guanamine bond, n a1 is independently 0 to 2, and Ra 1 is the above formula (a1-r-1) An acid dissociable group represented by ~(a1-r-2). Wa 1 is a hydrocarbon group of n a2 +1 valence, n a2 is 1-3, and Ra 2 is an acid dissociable group represented by the above formula (a1-r-1) or (a1-r-3).

前述式(a1-1)中,碳數1~5之烷基,以直鏈狀或支鏈狀較佳,具體而言,例如,甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。碳數1~5之鹵化烷基為,前述碳數1~5之烷基中之氫原子的一部份或全部被鹵素原子所取代之基。該鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。 In the above formula (a1-1), the alkyl group having 1 to 5 carbon atoms is preferably linear or branched, and specifically, for example, methyl, ethyl, propyl, isopropyl, n- Butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl and the like. The halogenated alkyl group having 1 to 5 carbon atoms is a group in which a part or all of a hydrogen atom in the alkyl group having 1 to 5 carbon atoms is substituted by a halogen atom. The halogen atom is, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, and particularly preferably a fluorine atom.

R以氫原子、碳數1~5之烷基或碳數1~5之氟化烷基為佳,就工業上取得之容易而言,以氫原子或甲基為最佳。 R is preferably a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a fluorinated alkyl group having 1 to 5 carbon atoms. In terms of industrial availability, a hydrogen atom or a methyl group is preferred.

Va1之2價之烴基,可為脂肪族烴基亦可、芳香族烴基亦可。脂肪族烴基為不具有芳香族性之烴基之意。Va1中作為2價之烴基的脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和為佳。 The hydrocarbon group having a valence of two of Va 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group is intended to be a hydrocarbon group having no aromaticity. The aliphatic hydrocarbon group which is a divalent hydrocarbon group in Va 1 may be saturated or unsaturated, and is usually saturated.

前述脂肪族烴基,更具體而言,例如,直鏈狀或支鏈狀之脂肪族烴基或結構中含有環之脂肪族烴基等。 The aliphatic hydrocarbon group is more specifically, for example, a linear or branched aliphatic hydrocarbon group or a hydrocarbon group having a ring in the structure.

又,Va1例如,上述2價之烴基介由醚鍵結、胺基甲酸酯鍵結,或醯胺鍵結所鍵結者等。 Further, Va 1 is, for example, a bond of a divalent hydrocarbon group bonded via an ether bond, a urethane bond, or a guanamine bond.

前述直鏈狀或支鏈狀之脂肪族烴基,以碳數為1~10者為佳,以1~6為較佳,以1~4為更佳,以1~3為最佳。 The linear or branched aliphatic hydrocarbon group is preferably a carbon number of 1 to 10, preferably 1 to 6, more preferably 1 to 4, and most preferably 1 to 3.

直鏈狀之脂肪族烴基,以直鏈狀之伸烷基為佳,具體而言,例如,伸甲基[-CH2-]、伸乙基[-(CH2)2-]、伸三甲基[-(CH2)3-]、伸四甲基[-(CH2)4-]、伸五甲基[-(CH2)5-]等。 a linear aliphatic hydrocarbon group, preferably a linear alkyl group, specifically, for example, methyl [-CH 2 -], ethyl (-(CH 2 ) 2 -), or The group [-(CH 2 ) 3 -], tetramethyl [-(CH 2 ) 4 -], pentamethyl [-(CH 2 ) 5 -], and the like.

支鏈狀之脂肪族烴基,以支鏈狀之伸烷基為佳,具體而言,例如,-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基伸甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2-CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基伸三甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基伸四甲基等之烷基伸烷基等。烷基伸烷基中之烷基,以碳數1~5之直鏈狀烷基為佳。 a branched aliphatic hydrocarbon group, preferably a branched alkyl group, specifically, for example, -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 - or the like alkyl-methyl group; CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C(CH 2 CH 3) 2 -CH 2 -, etc. extending ethyl group; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - , etc. extending trimethyl alkyl; -CH (CH 3 ) An alkyl group such as CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like is extended to an alkyl group such as a tetramethyl group. The alkyl group in the alkylalkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms.

前述結構中含有環之脂肪族烴基,例如,脂環式烴基(由脂肪族烴環去除2個氫原子所得之基)、脂環式烴基鍵結於直鏈狀或支鏈狀之脂肪族烴基末端之基、脂環式烴基介於直鏈狀或支鏈狀之脂肪族烴基中途之基等。 前述直鏈狀或支鏈狀之脂肪族烴基,與前述為相同之內容。 The above structure contains a ring-shaped aliphatic hydrocarbon group, for example, an alicyclic hydrocarbon group (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), and an alicyclic hydrocarbon group bonded to a linear or branched aliphatic hydrocarbon group. The terminal group and the alicyclic hydrocarbon group are in the middle of a linear or branched aliphatic hydrocarbon group. The linear or branched aliphatic hydrocarbon group is the same as described above.

前述脂環式烴基,以碳數為3~20者為佳,以3~12為較佳。 The alicyclic hydrocarbon group is preferably a carbon number of from 3 to 20, more preferably from 3 to 12.

前述脂環式烴基,可為多環式亦可、單環式亦可。單環式之脂環式烴基,以由單環鏈烷去除2個氫原子所得之基為佳。該單環鏈烷以碳數3~6者為佳,具體而言,例如,環戊烷、環己烷等。多環式之脂環式烴基,以由多環鏈烷去除2個氫原子所得之基為佳,該多環鏈烷,以碳數7~12者為佳,具體而言,例如,金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。 The alicyclic hydrocarbon group may be a polycyclic ring or a monocyclic ring. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a monocyclic alkane. The monocyclic alkane is preferably a carbon number of 3 to 6, and specifically, for example, cyclopentane or cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycyclic alkane, preferably having a carbon number of from 7 to 12, specifically, for example, adamantane , norbornane, isodecane, tricyclodecane, tetracyclododecane, and the like.

芳香族烴基為具有芳香環之烴基。 The aromatic hydrocarbon group is a hydrocarbon group having an aromatic ring.

前述Va1中,作為2價烴基之芳香族烴基,以碳數為3~30者為佳,以5~30為較佳,以5~20為更佳,以6~15為特佳,以6~10為最佳。其中,該碳數中,為不包含取代基中之碳數者。 In the above Va 1 , the aromatic hydrocarbon group as the divalent hydrocarbon group is preferably 3 to 30, more preferably 5 to 30, more preferably 5 to 20, and most preferably 6 to 15. 6~10 is the best. Among them, the carbon number is not including the carbon number in the substituent.

芳香族烴基所具有之芳香環,具體而言,例如,苯、聯苯、茀、萘、蒽、菲等芳香族烴環;構成前述芳香族烴環之碳原子的一部份被雜原子所取代之芳香族雜環;等。 芳香族雜環中之雜原子,例如,氧原子、硫原子、氮原子等。 The aromatic ring of the aromatic hydrocarbon group, specifically, for example, an aromatic hydrocarbon ring such as benzene, biphenyl, anthracene, naphthalene, anthracene or phenanthrene; a part of a carbon atom constituting the aromatic hydrocarbon ring is a hetero atom Substituted aromatic heterocycle; The hetero atom in the aromatic hetero ring is, for example, an oxygen atom, a sulfur atom, a nitrogen atom or the like.

芳香族烴基,具體而言,例如由前述芳香族烴環去除2個氫原子所得之基(伸芳基);由前述芳香族烴環去除1個氫原子所得之基(芳基)中的1個氫原子被伸烷基所取代之基(例如,由苄基、苯乙基、1-萘甲基、2-萘甲基、1-萘乙基、2-萘乙基等芳基烷基中的芳基再去除1個氫原子所得之基);由含有2個以上之芳香環的芳香族化合物(例如聯苯、茀等)去除2個氫原子所得之基;等。前述伸烷基 (芳基烷基中之烷基鏈)之碳數,以1~4為佳,以1~2為較佳,以1為特佳。 The aromatic hydrocarbon group is specifically, for example, a group obtained by removing two hydrogen atoms from the aromatic hydrocarbon ring (aryl group); and 1 in the group (aryl group) obtained by removing one hydrogen atom from the aromatic hydrocarbon ring. a group in which a hydrogen atom is substituted by an alkyl group (for example, an arylalkyl group such as a benzyl group, a phenethyl group, a 1-naphthylmethyl group, a 2-naphthylmethyl group, a 1-naphthylethyl group or a 2-naphthylethyl group) a group obtained by removing one hydrogen atom from an aryl group; a group obtained by removing two hydrogen atoms from an aromatic compound containing two or more aromatic rings (for example, biphenyl, anthracene, etc.); Alkyl The carbon number of the (alkyl chain in the arylalkyl group) is preferably from 1 to 4, more preferably from 1 to 2, most preferably from 1.

前述式(a1-2)中,Wa1中之na2+1價之烴基,可為脂肪族烴基亦可、芳香族烴基亦可。該脂肪族烴基,係指不具有芳香族性之烴基之意,其可為飽和者亦可、不飽和者亦可,通常以飽和為佳。前述脂肪族烴基,例如,直鏈狀或支鏈狀之脂肪族烴基、結構中含有環之脂肪族烴基,或直鏈狀或支鏈狀之脂肪族烴基與結構中含有環之脂肪族烴基組合所得之基等,具體而言,例如,與上述式(a1-1)之Va1為相同例示之基。 In the above formula (a1-2), the hydrocarbon group having a n a2 +1 valence in Wa 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group which does not have an aromaticity, and may be either saturated or unsaturated, and is usually saturated. The above aliphatic hydrocarbon group, for example, a linear or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group having a ring in the structure, or a linear or branched aliphatic hydrocarbon group and a cyclic hydrocarbon group containing a ring in the structure Specifically, for example, the base and the like of the above formula (a1-1) are the same as those exemplified for Va 1 of the above formula (a1-1).

前述na2+1價,以2~4價為佳,以2或3價為更佳。 The aforementioned n a2 +1 price is preferably 2 to 4, and more preferably 2 or 3.

前述式(a1-2)中,特別是以下述通式(a1-2-01)所表示之結構單位為佳。 In the above formula (a1-2), it is particularly preferably a structural unit represented by the following formula (a1-2-01).

式(a1-2-01)中,Ra2為上述式(a1-r-1)或(a1-r-3)所表示之酸解離性基。na2為1~3之整數,以1或2為 較佳,以1為更佳。c為0~3之整數,以0或1為較佳,以1為更佳。R與前述為相同之內容。 In the formula (a1-2-01), Ra 2 is an acid dissociable group represented by the above formula (a1-r-1) or (a1-r-3). n a2 is an integer of 1 to 3, preferably 1 or 2, more preferably 1 or more. c is an integer of 0 to 3, preferably 0 or 1, and more preferably 1. R is the same as the foregoing.

以下為前述式(a1-1)之具體例示。以下各式中,Rα為氫原子、甲基或三氟甲基。 The following is a specific example of the above formula (a1-1). In the following formulae, R α is a hydrogen atom, a methyl group or a trifluoromethyl group.

以下為前述式(a1-2)之具體例示。 The following is a specific example of the above formula (a1-2).

又,丙烯酸樹脂(Aac1),以由相對於上述通式(a1-1)~(a1-2)所表示之結構單位,尚含有具有醚鍵結之聚合性化合物所衍生之結構單位的共聚物所得之樹脂為佳。 Further, the acrylic resin (Aac1) is a copolymer having a structural unit derived from a polymerizable compound having an ether bond, which is a structural unit represented by the above formulas (a1-1) to (a1-2). The resulting resin is preferred.

上述具有醚鍵結之聚合性化合物,可例如,具有醚鍵結及酯鍵結之(甲基)丙烯酸衍生物等之自由基聚合性化合物,具體之例如,2-甲氧基乙基(甲基)丙烯酸酯、2-乙氧基乙基(甲基)丙烯酸酯、甲氧基三乙二醇(甲基)丙烯酸酯、3-甲氧基丁基(甲基)丙烯酸酯、乙基卡必醇基(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、四氫糠基(甲基)丙烯酸酯 等。又,上述具有醚鍵結之聚合性化合物,較佳為,2-甲氧基乙基(甲基)丙烯酸酯、2-乙氧基乙基(甲基)丙烯酸酯、甲氧基三乙二醇(甲基)丙烯酸酯。該些聚合性化合物,可單獨使用亦可,或將2種以上組合使用亦可。 The polymerizable compound having an ether bond may, for example, be a radically polymerizable compound having an ether bond or an ester-bonded (meth)acrylic acid derivative, and, for example, 2-methoxyethyl (A) Acrylate, 2-ethoxyethyl (meth) acrylate, methoxy triethylene glycol (meth) acrylate, 3-methoxybutyl (meth) acrylate, ethyl card Alcohol (meth) acrylate, phenoxy polyethylene glycol (meth) acrylate, methoxy polypropylene glycol (meth) acrylate, tetrahydrofurfuryl (meth) acrylate Wait. Further, the above polymerizable compound having an ether bond is preferably 2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate or methoxy triethylene ethane. Alcohol (meth) acrylate. These polymerizable compounds may be used singly or in combination of two or more kinds.

又,丙烯酸樹脂(Aac1)中,就適度地控制物理、化學特性等目的,可含有其他聚合性化合物作為結構單位。該些聚合性化合物,可例如公知之自由基聚合性化合物,或陰離子聚合性化合物等。又,該些聚合性化合物,例如,丙烯酸、甲基丙烯酸、巴豆酸等單羧酸類;馬來酸、富馬酸、衣康酸等二羧酸類;2-甲基丙烯醯氧乙基琥珀酸、2-甲基丙烯醯氧乙基馬來酸、2-甲基丙烯醯氧乙基苯二甲酸、2-甲基丙烯醯氧乙基六氫苯二甲酸等羧基及具有酯鍵結之甲基丙烯酸衍生物類;甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、丁基(甲基)丙烯酸酯等(甲基)丙烯酸烷基酯類;2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯等(甲基)丙烯酸羥烷基酯類;苯基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯等(甲基)丙烯酸芳酯類;馬來酸二乙酯、富馬酸二丁酯等二羧酸二酯類;苯乙烯、α-甲基苯乙烯、氯基苯乙烯、氯甲基苯乙烯、乙烯基甲苯、羥基苯乙烯、α-甲基羥基苯乙烯、α-乙基羥基苯乙烯等含有乙烯基之芳香族化合物類;乙烯基乙酸等含有乙烯基之脂肪族化合物類;丁二烯、異丁烯等共軛二烯類;丙烯腈、甲基丙烯腈等含有腈基之聚合性化合物類;氯乙烯、二氯乙烯等含氯之聚合性化合物;丙烯醯胺、甲基丙 烯醯胺等含有醯胺鍵結之聚合性化合物類;等。 Further, in the acrylic resin (Aac1), physical and chemical properties and the like are appropriately controlled, and other polymerizable compounds may be contained as structural units. The polymerizable compound may, for example, be a known radically polymerizable compound or an anionically polymerizable compound. Further, the polymerizable compounds are, for example, monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid; 2-methylpropenyloxyethyl succinic acid; , 2-methylpropenyloxyethyl maleic acid, 2-methylpropenyloxyethyl phthalic acid, 2-methylpropenyl oxyethyl hexahydrophthalic acid, etc., and an ester-bonded group Acrylic acid derivatives; methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate and other alkyl (meth) acrylates; 2-hydroxyethyl (A (meth) hydroxyalkyl (meth) acrylate such as acrylate or 2-hydroxypropyl (meth) acrylate; phenyl (meth) acrylate, benzyl (meth) acrylate, etc. (methyl) Aromatic acrylates; dicarboxylic acid diesters such as diethyl maleate and dibutyl fumarate; styrene, α-methylstyrene, chlorostyrene, chloromethylstyrene, vinyl toluene a vinyl-containing aromatic compound such as hydroxystyrene, α-methylhydroxystyrene or α-ethylhydroxystyrene; a vinyl-containing aliphatic group such as vinyl acetate a conjugated diene such as butadiene or isobutylene; a polymerizable compound containing a nitrile group such as acrylonitrile or methacrylonitrile; a chlorine-containing polymerizable compound such as vinyl chloride or dichloroethylene; and acrylamide Methyl propyl A polymerizable compound containing a guanamine bond, such as an eneamine;

(結構單位(a4)) (Structural unit (a4))

丙烯酸樹脂(Aac1),又於必要時,可具有含非酸解離性環式基之結構單位(a4)。(Aac1)成份具有結構單位(a4)之情形,可提高所形成之光阻圖型的乾式蝕刻耐性。 The acrylic resin (Aac1) may, if necessary, have a structural unit (a4) containing a non-acid dissociable cyclic group. The (Aac1) component has a structural unit (a4), which improves the dry etching resistance of the formed photoresist pattern.

結構單位(a4)中之「非酸解離性環式基」係指,經由曝光而由(B)成份產生酸之際,即使受到該酸之作用,也不會產生解離,而依然殘留於該結構單位中之環式基。 The "non-acid dissociable cyclic group" in the structural unit (a4) means that when an acid is generated from the component (B) by exposure, even if it is subjected to the action of the acid, dissociation does not occur, and remains in the A ring group in a structural unit.

結構單位(a4),例如,以由含有非酸解離性之脂肪族環式基的丙烯酸酯所衍生之結構單位等為佳。該環式基,可例如,與前述之丙烯酸樹脂(Aac1)之情形中所例示者為相同之內容,其可使用被作為光阻組成物之樹脂成份所使用之以往已知之多數成份。 The structural unit (a4) is preferably, for example, a structural unit derived from an acrylate having a non-acid dissociable aliphatic cyclic group. The ring group can be, for example, the same as those exemplified in the case of the above-mentioned acrylic resin (Aac1), and it is possible to use a conventionally known majority component which is used as a resin component of the photoresist composition.

特別是由三環癸基、金剛烷基、四環十二烷基、異莰基、降莰基所選出之至少1種時,就工業上容易取得等觀點,而為較佳。該些多環式基,亦可具有碳數1~5之直鏈狀或支鏈狀烷基作為取代基。 In particular, when at least one selected from the group consisting of a tricyclic fluorenyl group, an adamantyl group, a tetracyclododecyl group, an isodecyl group, and a fluorenyl group is industrially preferable, it is preferable. These polycyclic groups may have a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent.

丙烯酸樹脂(Aac1),具體而言,可例如具有下述通式(a4-1)~(a4-7)之結構者。 Specifically, the acrylic resin (Aac1) may have a structure of the following general formulae (a4-1) to (a4-7).

[式中,Rα與前述為相同之內容]。 [wherein R α is the same as described above].

樹脂成份(A1)所含有之結構單位(a4),可為1種亦可、2種以上亦可。 The structural unit (a4) contained in the resin component (A1) may be one type or two or more types.

樹脂成份(A1)含有結構單位(a4)之際,結構單位(a4)之比例,相對於構成(A1)成份之全結構單位之合計,以1~30莫耳%為佳,以10~20莫耳%為更佳。 When the resin component (A1) contains the structural unit (a4), the ratio of the structural unit (a4) is preferably from 1 to 30 mol%, preferably from 10 to 20, based on the total of the structural units constituting the component (A1). Molar% is better.

上述樹脂成份(A)之中,又以使用丙烯酸樹脂(Aac1)為佳。該些丙烯酸樹脂(Aac1)中,又以具有上述通式(a1-1)所表示之結構單位,與(甲基)丙烯酸所衍生之結構單位,與(甲基)丙烯酸烷基酯類所衍生之結構單位,與(甲基)丙烯酸芳酯類所衍生之結構單位的共聚物為佳。 Among the above resin components (A), an acrylic resin (Aac1) is preferably used. The acrylic resin (Aac1) is further derived from a structural unit represented by the above formula (a1-1), a structural unit derived from (meth)acrylic acid, and an alkyl (meth)acrylate. The structural unit is preferably a copolymer with a structural unit derived from an aryl (meth) acrylate.

該些共聚物,又以下述通式(a8)所表示之共聚物為佳。 These copolymers are preferably copolymers represented by the following formula (a8).

上述通式(a8)中,Ra30表示氫原子或甲基,Ra31表示碳數2~4之直鏈狀或支鏈狀烷基,Xa與其鍵結之碳原子共同形成碳數5~20之烴環,Ra32表示碳數1~6之直鏈狀或支鏈狀烷基或碳數1~6之烷氧基烷基,Ra33表示碳數6~12之芳基。 In the above formula (a8), Ra 30 represents a hydrogen atom or a methyl group, and Ra 31 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and Xa and its bonded carbon atoms together form a carbon number of 5 to 20 The hydrocarbon ring, Ra 32 represents a linear or branched alkyl group having 1 to 6 carbon atoms or an alkoxyalkyl group having 1 to 6 carbon atoms, and Ra 33 represents an aryl group having 6 to 12 carbon atoms.

上述Xa,與其鍵結之碳原子共同形成碳數5~20之脂肪族環式基。該些脂肪族環式基之具體例如,單環鏈烷、二環鏈烷、三環鏈烷、四環鏈烷等多環鏈烷去除1個以上之氫原子所得之基等例示。具體而言,例如,由環戊烷、環己烷、環庚烷、環辛烷等單環鏈烷,或由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等例示。特別是由環己烷、金剛烷去除1個以上之氫原子所得之基(其可再具有取代基)為佳。 The above Xa, together with the carbon atom to which it is bonded, forms an aliphatic cyclic group having 5 to 20 carbon atoms. Specific examples of the aliphatic cyclic group include, for example, a group obtained by removing one or more hydrogen atoms from a polycyclic alkane such as a monocyclic alkane, a bicycloalkane, a tricycloalkane or a tetracycloalkane. Specifically, for example, a monocyclic alkane such as cyclopentane, cyclohexane, cycloheptane or cyclooctane, or adamantane, norbornane, isodecane, tricyclodecane or tetracyclic A group obtained by removing one or more hydrogen atoms such as a polycyclic alkane such as an alkane is exemplified. In particular, a group obtained by removing one or more hydrogen atoms from cyclohexane or adamantane (which may have a substituent) is preferred.

又,上述Xa之脂肪族環式基,於其環骨骼上具有取代基之情形,該取代基之例如,羥基、羧基、氰基、氧原子(=O)等極性基,或碳數1~4之直鏈狀或支鏈狀之低級烷基等。極性基,特別是以氧原子(=O)為佳。 Further, the aliphatic cyclic group of Xa has a substituent on the ring skeleton, and the substituent is, for example, a polar group such as a hydroxyl group, a carboxyl group, a cyano group or an oxygen atom (=O), or a carbon number of 1~. a linear or branched lower alkyl group of 4 or the like. The polar group is particularly preferably an oxygen atom (=O).

又,上述通式(a8)所表示之共聚物中,s、t、u、v分別表示其結構單位之莫耳比,s為8~45莫耳%,t為10~65莫耳%,u為3~25莫耳%,v為6~25莫耳%。 Further, in the copolymer represented by the above formula (a8), s, t, u, and v each represent a molar ratio of the structural unit, s is 8 to 45 mol%, and t is 10 to 65 mol%. u is 3 to 25 mol%, and v is 6 to 25 mol%.

[酚醛清漆樹脂(Anv1)] [Novolak resin (Anv1)]

酚醛清漆樹脂(Anv1),可使用含有下述通式(anv1)所表示之結構單位的樹脂。 As the novolak resin (Anv1), a resin containing a structural unit represented by the following formula (anv1) can be used.

[式中,Ra11為酸解離性基,Ra12、Ra13分別獨立為氫原子或碳數1~6之烷基]。 [In the formula, Ra 11 is an acid dissociable group, and Ra 12 and Ra 13 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms].

上述通式(anv1)中,Ra11表示酸解離性基,Ra12、Ra13分別獨立表示氫原子或碳數1~6之烷基。Ra11,以前述通式(a1-r-1)或(a1-r-3)所表示之基、碳數1~6之直鏈狀、支鏈狀,或環狀之烷基、四氫吡喃基、四氫呋喃基,或三烷基矽烷基為佳。 In the above formula (anv1), Ra 11 represents an acid-dissociable group, and Ra 12 and Ra 13 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. Ra 11 , a group represented by the above formula (a1-r-1) or (a1-r-3), a linear, branched or cyclic alkyl group having a carbon number of 1 to 6, tetrahydrogen A pyranyl group, a tetrahydrofuranyl group, or a trialkylalkylene group is preferred.

上述碳數1~6之烷基,例如,碳數1~6之直鏈狀、支鏈狀,或環狀之烷基。直鏈狀或支鏈狀烷基,例如,甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等,環狀烷基,例如,環戊基、環己基等。 The alkyl group having 1 to 6 carbon atoms is, for example, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms. a linear or branched alkyl group, for example, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, etc. , a cyclic alkyl group, for example, a cyclopentyl group, a cyclohexyl group or the like.

[聚羥基苯乙烯樹脂(Aphs1)] [Polyhydroxystyrene resin (Aphs1)]

聚羥基苯乙烯樹脂(Aphs1),可使用含有下述通式 (aphs1)所表示之結構單位之樹脂。 Polyhydroxystyrene resin (Aphs1), which can be used to contain the following formula The resin of the structural unit represented by (aphs1).

[式中,Ra18,表示氫原子或碳數1~6之烷基,Ra19為酸解離性基]。 [In the formula, Ra 18 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and Ra 19 is an acid dissociable group].

上述通式(aphs1)中,Ra18,表示氫原子或碳數1~6之烷基,Ra19表示酸解離性溶解抑制基。 In the above formula (aphs1), Ra 18 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and Ra 19 represents an acid dissociable dissolution inhibiting group.

前述通式(aphs1)中,Ra19例如與前述通式(anv1)中的Ra11為相同之基。 In the above formula (aphs1), Ra 19 is, for example, the same group as Ra 11 in the above formula (anv1).

上述碳數1~6之烷基,例如,碳數1~6之直鏈狀、支鏈狀,或環狀之烷基。直鏈狀或支鏈狀烷基,例如,甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等,環狀烷基,例如,環戊基、環己基等。 The alkyl group having 1 to 6 carbon atoms is, for example, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms. a linear or branched alkyl group, for example, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, etc. , a cyclic alkyl group, for example, a cyclopentyl group, a cyclohexyl group or the like.

又,聚羥基苯乙烯樹脂(Aphs1),就適度控制物理、化學特性之目的時,可含有其他聚合性化合物作為結構單位。該些聚合性化合物,可例如公知之自由基聚合性化合物,或陰離子聚合性化合物等。又,該些聚合性化合物,例如,丙烯酸、甲基丙烯酸、巴豆酸等單羧酸類;馬來酸、富馬酸、衣康酸等二羧酸類;2-甲基丙烯醯氧乙 基琥珀酸、2-甲基丙烯醯氧乙基馬來酸、2-甲基丙烯醯氧乙基苯二甲酸、2-甲基丙烯醯氧乙基六氫苯二甲酸等羧基及具有酯鍵結之甲基丙烯酸衍生物類;甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、丁基(甲基)丙烯酸酯等(甲基)丙烯酸烷基酯類;2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯等(甲基)丙烯酸羥烷基酯類;苯基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯等(甲基)丙烯酸芳酯類;馬來酸二乙酯、富馬酸二丁酯等二羧酸二酯類;苯乙烯、α-甲基苯乙烯、氯基苯乙烯、氯甲基苯乙烯、乙烯基甲苯、羥基苯乙烯、α-甲基羥基苯乙烯、α-乙基羥基苯乙烯等含有乙烯基之芳香族化合物類;乙烯基乙酸等含有乙烯基之脂肪族化合物類;丁二烯、異丁烯等共軛二烯類;丙烯腈、甲基丙烯腈等含有腈基之聚合性化合物類;氯乙烯、二氯乙烯等含氯之聚合性化合物;丙烯醯胺、甲基丙烯醯胺等含有醯胺鍵結之聚合性化合物類;等。 Further, the polyhydroxystyrene resin (Aphs1) may contain other polymerizable compounds as structural units in order to appropriately control physical and chemical properties. The polymerizable compound may, for example, be a known radically polymerizable compound or an anionically polymerizable compound. Further, the polymerizable compounds are, for example, monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid; 2-methylpropene oxide B Carboxylic acid, 2-methylpropenyloxyethyl maleic acid, 2-methylpropenyloxyethyl phthalic acid, 2-methylpropenyloxyethyl hexahydrophthalic acid, etc. a methacrylic acid derivative; a methyl (meth) acrylate, an ethyl (meth) acrylate, a butyl (meth) acrylate or the like (meth) acrylate alkyl ester; 2-hydroxy ethane a hydroxyalkyl (meth) acrylate such as a (meth) acrylate or a 2-hydroxypropyl (meth) acrylate; a phenyl (meth) acrylate or a benzyl (meth) acrylate ( Alkyl methacrylates; dicarboxylic acid diesters such as diethyl maleate and dibutyl fumarate; styrene, α-methylstyrene, chlorostyrene, chloromethylstyrene, a vinyl-containing aromatic compound such as vinyl toluene, hydroxystyrene, α-methylhydroxystyrene or α-ethylhydroxystyrene; a vinyl-containing aliphatic compound such as vinyl acetate; butadiene, a conjugated diene such as isobutylene; a polymerizable compound containing a nitrile group such as acrylonitrile or methacrylonitrile; and a polymerization polymerization of chlorine such as vinyl chloride or dichloroethylene. Thereof; acrylamide, methyl acrylamide and other polymerizable compounds containing a bond of Amides; and the like.

樹脂成份(A),可將酚醛清漆樹脂(Anv1)及聚羥基苯乙烯樹脂(Aphs1),與丙烯酸樹脂(Aac1)組合使用,此情形中,相對於該些樹脂之合計,丙烯酸樹脂所佔之比例,以5~100質量%為佳,以50~100質量%為較佳,以100質量%為更佳。 The resin component (A) can be used by combining a novolac resin (Anv1) and a polyhydroxystyrene resin (Aphs1) with an acrylic resin (Aac1). In this case, the acrylic resin occupies the total of the resins. The ratio is preferably 5 to 100% by mass, preferably 50 to 100% by mass, more preferably 100% by mass.

樹脂成份(A)之聚苯乙烯換算質量平均分子量,較佳為5000~300000,更佳為7000~200000,最佳為10000~200000。為該些質量平均分子量之情形,可在不會降低與支撐體之剝離性的同時而可使厚膜光阻層保持 充分之強度,且於鍍敷時可防止外表之膨漲,或產生龜裂。 The polystyrene-converted mass average molecular weight of the resin component (A) is preferably from 5,000 to 300,000, more preferably from 7,000 to 200,000, most preferably from 10,000 to 200,000. For the mass average molecular weight, the thick film photoresist layer can be maintained without reducing the peeling property from the support. Full strength, and can prevent the appearance of swelling or cracking during plating.

又,樹脂成份(A),以分散度為1.05以上之樹脂為佳。其中,分散度為質量平均分子量除以數平均分子量所得之數值。於該些分散度範圍時,可得到所期待之相對於鍍敷之耐應力性,或可迴避鍍敷處理所得之金屬層容易產生膨脹等問題。 Further, the resin component (A) is preferably a resin having a degree of dispersion of 1.05 or more. Here, the degree of dispersion is a value obtained by dividing the mass average molecular weight by the number average molecular weight. In such a range of dispersion, it is possible to obtain the desired stress resistance against plating, or to avoid the problem that the metal layer obtained by the plating treatment is likely to expand.

樹脂成份(A)之含量並未有特別限定,例如,使用於厚膜用時,相對於本發明之光阻組成物的全質量,為5~60質量%,較佳為20~60質量%,更佳為30~50質量%為宜。 The content of the resin component (A) is not particularly limited. For example, when used for a thick film, it is 5 to 60% by mass, preferably 20 to 60% by mass based on the total mass of the photoresist composition of the present invention. More preferably 30 to 50% by mass.

本發明中,樹脂成份(A),可含有下述結構單位(a2)、(a3)、(a5)。 In the present invention, the resin component (A) may contain the following structural units (a2), (a3), and (a5).

(結構單位(a2)) (Structural unit (a2))

樹脂成份(A)可含有,含有含內酯之環式基的結構單位(a2)。 The resin component (A) may contain a structural unit (a2) containing a cyclic group containing a lactone.

結構單位(a2)之內酯環式基,於樹脂成份(A)使用於形成光阻膜之情形中,就提高光阻膜對基板之密著性之觀點為有效之成份。 The lactone ring group of the structural unit (a2) is effective in the viewpoint of improving the adhesion of the photoresist film to the substrate in the case where the resin component (A) is used to form the photoresist film.

「含內酯之環式基」係指,於其環骨骼中含有含-O-C(=O)-之環(內酯環)的環式基之意。內酯環以一個之環之方式計數,僅為內酯環之情形稱為單環式基,尚含有其他環結構之情形,無論其結構為何,皆稱為多環式 基。含內酯之環式基,可為單環式基亦可、多環式基亦可。 The "per lactone-containing cyclic group" means a ring-form group containing a ring containing -O-C(=O)- (lactone) in the ring skeleton. The lactone ring is counted in the form of a ring. The case of only the lactone ring is called a monocyclic group. It also contains other ring structures. Regardless of its structure, it is called a polycyclic ring. base. The cyclic group containing a lactone may be a monocyclic group or a polycyclic group.

結構單位(a2)中含內酯之環式基,並未有特別之限定,而可使用任意之成份。具體而言,例如,下述通式(a2-r-1)~(a2-r-7)所表示之基。以下,「*」表示鍵結鍵。 The cyclic group containing a lactone in the structural unit (a2) is not particularly limited, and any component may be used. Specifically, for example, a group represented by the following formula (a2-r-1) to (a2-r-7). Hereinafter, "*" indicates a key button.

[式中,Ra’21各自獨立為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基;R”為氫原子或烷基;A”為可含有氧原子或硫原子之碳數1~5之伸烷基、氧原子或硫原子,n’為0~2之整數,m’為0或1]。 [wherein, Ra' 21 is each independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group; "A hydrogen atom or an alkyl group; A" is an alkyl, oxygen or sulfur atom having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, n' is an integer of 0 to 2, and m' is 0 or 1. ].

前述通式(a2-r-1)~(a2-r-7)中,A”為可含有氧原子(-O-)或硫原子(-S-)之碳數1~5之伸烷基、氧原子或硫原子。A”中之碳數1~5之伸烷基,以直鏈狀或支鏈狀之伸烷基為佳,例如,伸甲基、伸乙基、n-伸丙基、伸異丙基等。該伸烷基為含有氧原子或硫原子之情形,其具體之例如,前述伸烷基之末端或碳原子間介有-O-或-S-之基 等,例如-O-CH2-、-CH2-O-CH2-、-S-CH2-、-CH2-S-CH2-等。A”,以碳數1~5之伸烷基或-O-為佳,以碳數1~5之伸烷基為較佳,以伸甲基為最佳。Ra’21中之烷基、烷氧基、鹵素原子、鹵化烷基、-COOR”、-OC(=O)R”、羥烷基,分別與前述通式(a0)中之V0 a1中之2價之環式基所可具有之取代基所列舉之烷基、烷氧基、鹵化烷基、-COOR”、-OC(=O)R”、羥烷基為相同之內容。 In the above formula (a2-r-1) to (a2-r-7), A" is an alkylene group having 1 to 5 carbon atoms which may contain an oxygen atom (-O-) or a sulfur atom (-S-). An oxygen atom or a sulfur atom. The alkyl group having a carbon number of 1 to 5 in A" is preferably a linear or branched alkyl group, for example, a methyl group, an ethyl group, and an n-propylene group. Base, isopropyl, etc. The alkylene group is in the case of containing an oxygen atom or a sulfur atom, and specifically, for example, a terminal of the alkylene group or a group having a -O- or -S- group, such as -O-CH 2 -, -CH 2 -O-CH 2 -, -S-CH 2 -, -CH 2 -S-CH 2 -, and the like. A", preferably an alkyl group having a carbon number of 1 to 5 or -O-, preferably a alkyl group having 1 to 5 carbon atoms, preferably a methyl group, and an alkyl group in Ra' 21 , An alkoxy group, a halogen atom, a halogenated alkyl group, -COOR", -OC(=O)R", a hydroxyalkyl group, respectively, and a two-valent ring group in V 0 a1 in the above formula (a0) The alkyl group, the alkoxy group, the halogenated alkyl group, the -COOR", the -OC(=O)R", and the hydroxyalkyl group which may be substituted by the substituent are the same.

以下將列舉通式(a2-r-1)~(a2-r-7)所表示之基的具體例。 Specific examples of the group represented by the general formula (a2-r-1) to (a2-r-7) will be listed below.

結構單位(a2),只要為具有含內酯之環式基者之際,其他部份之結構並未有特別之限定,可例如下述通式(a2-1)所表示之結構單位等例示。 The structural unit (a2) is not particularly limited as long as it has a cyclic group containing a lactone, and can be exemplified, for example, by a structural unit represented by the following general formula (a2-1). .

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,Ya21為單鍵或2價之連結基,La21為-O-、-COO-、-CON(R’)-、-OCO-、-CONHCO-或-CONHCS-,R’表示氫原子或甲基。但,La21為-O-之情形,Ya21不為-CO-。Ra21為含內酯之環式基、含碳酸酯之環式基,或含-SO2-之環式基]。 Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; Ya 21 is a single bond or a divalent linking group, and La 21 is -O-, -COO- , -CON(R')-, -OCO-, -CONHCO- or -CONHCS-, R' represents a hydrogen atom or a methyl group. However, when La 21 is -O-, Ya 21 is not -CO-. Ra 21 is a lactone-containing ring group, a carbonate-containing ring group, or a -SO 2 -containing ring group.

Ya21之2價之連結基並未有特別之限定,又以可具有取代基之2價之烴基、含有雜原子之2價之連結基等為較佳之例示。 The linking group of the two valences of Ya 21 is not particularly limited, and a divalent hydrocarbon group having a substituent, a divalent linking group containing a hetero atom, or the like is preferably exemplified.

(可具有取代基之2價之烴基) (a divalent hydrocarbon group which may have a substituent)

作為2價之連結基之烴基,可為脂肪族烴基亦可、芳香族烴基亦可。 The hydrocarbon group which is a divalent linking group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

脂肪族烴基為不具有芳香族性之烴基之意。該脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和為佳。 The aliphatic hydrocarbon group is intended to be a hydrocarbon group having no aromaticity. The aliphatic hydrocarbon group may be either saturated or unsaturated, and is usually saturated.

前述脂肪族烴基,例如,直鏈狀或支鏈狀之脂肪族烴基或結構中,含有環之脂肪族烴基等,具體而言,例如,與上述式(a1-1)中之Va1所例示之基等。 The aliphatic hydrocarbon group, for example, a linear or branched aliphatic hydrocarbon group or structure, a ring-containing aliphatic hydrocarbon group or the like, specifically, for example, exemplified by Va 1 in the above formula (a1-1) Base and so on.

前述直鏈狀或支鏈狀之脂肪族烴基,可具有取代基亦可、不具有取代基亦可。該取代基例如,氟原子、可被氟原子所取代之碳數1~5之氟化烷基、羰基等。 The linear or branched aliphatic hydrocarbon group may have a substituent or may have no substituent. The substituent is, for example, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms which may be substituted by a fluorine atom, a carbonyl group or the like.

前述結構中含有環之脂肪族烴基,例如,環結構中可含有含有雜原子之取代基的環狀脂肪族烴基(由脂肪族烴環去除2個氫原子所得之基)、前述環狀脂肪族烴基鍵結於直鏈狀或支鏈狀之脂肪族烴基末端之基、前述環狀脂肪族烴基介於直鏈狀或支鏈狀之脂肪族烴基中途之基等。前述直鏈狀或支鏈狀之脂肪族烴基,與前述為相同之內容。 The aliphatic hydrocarbon group having a ring in the above structure, for example, a cyclic aliphatic hydrocarbon group which may have a substituent containing a hetero atom in the ring structure (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), the aforementioned cyclic aliphatic group The hydrocarbon group is bonded to a terminal group of a linear or branched aliphatic hydrocarbon group, and the above-mentioned cyclic aliphatic hydrocarbon group is a group in the middle of a linear or branched aliphatic hydrocarbon group. The linear or branched aliphatic hydrocarbon group is the same as described above.

環狀脂肪族烴基,以碳數為3~20者為佳,以3~12為較佳。 The cyclic aliphatic hydrocarbon group is preferably a carbon number of 3 to 20, more preferably 3 to 12.

環狀脂肪族烴基,具體而言,例如,上述式(a1-1)中之Va1所例示之基等。 The cyclic aliphatic hydrocarbon group is specifically, for example, a group exemplified by Va 1 in the above formula (a1-1).

環狀脂肪族烴基,可具有取代基亦可、不具有取代基亦可。該取代基,例如,烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基等。 The cyclic aliphatic hydrocarbon group may have a substituent or may have no substituent. The substituent is, for example, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group or the like.

作為前述取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為前述取代基之烷氧基,以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 The alkoxy group as the above substituent is preferably an alkoxy group having 1 to 5 carbon atoms, and a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, or a tert group. The -butoxy group is preferred, and the methoxy group and the ethoxy group are most preferred.

作為前述取代基之鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 The halogen atom as the substituent, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom.

作為前述取代基之鹵化烷基,例如,前述烷基中之氫原子的一部份或全部被前述鹵素原子所取代之基等。 The halogenated alkyl group as the above substituent is, for example, a group in which a part or all of a hydrogen atom in the above alkyl group is substituted by the aforementioned halogen atom.

環狀脂肪族烴基,構成其環結構之碳原子的一部份可被含有雜原子之取代基所取代。含有該雜原子之取代基,以-O-、-C(=O)-O-、-S-、-S(=O)2-、-S(=O)2-O-為佳。 The cyclic aliphatic hydrocarbon group, a part of the carbon atom constituting the ring structure thereof may be substituted by a substituent containing a hetero atom. The substituent containing the hetero atom is preferably -O-, -C(=O)-O-, -S-, -S(=O) 2 -, -S(=O) 2 -O-.

作為2價之烴基的芳香族烴基,具體而言,例如,上述式(a1-1)中之Va1所例示之基等。 Specific examples of the aromatic hydrocarbon group of the divalent hydrocarbon group include, for example, the group exemplified by Va 1 in the above formula (a1-1).

前述芳香族烴基中,該芳香族烴基所具有之氫原子可被取代基所取代。例如該芳香族烴基中之芳香環所鍵結之氫原子可被取代基所取代。該取代基,例如,烷基、烷氧 基、鹵素原子、鹵化烷基、羥基等。 In the aromatic hydrocarbon group, a hydrogen atom of the aromatic hydrocarbon group may be substituted with a substituent. For example, a hydrogen atom bonded to an aromatic ring in the aromatic hydrocarbon group may be substituted with a substituent. The substituent, for example, an alkyl group, an alkoxy group a group, a halogen atom, a halogenated alkyl group, a hydroxyl group or the like.

作為前述取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為前述取代基之烷氧基、鹵素原子及鹵化烷基,例如,取代前述環狀脂肪族烴基所具有之氫原子的取代基所例示之內容等。 The alkoxy group, the halogen atom and the halogenated alkyl group as the substituent are exemplified by a substituent which substitutes for the hydrogen atom of the cyclic aliphatic hydrocarbon group.

(含有雜原子之2價之連結基) (a divalent linking group containing a hetero atom)

含有雜原子之2價之連結基中之雜原子為碳原子及氫原子以外之原子,例如氧原子、氮原子、硫原子、鹵素原子等。 The hetero atom in the divalent linking group containing a hetero atom is an atom other than a carbon atom and a hydrogen atom, for example, an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom or the like.

Ya21為含有雜原子之2價之連結基之情形,該連結基中之較佳者,例如,-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-、-NH-C(=NH)-(H可被烷基、醯基等取代基所取代)、-S-、-S(=O)2-、-S(=O)2-O-、通式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-[Y21-C(=O)-O]m’-Y22-或-Y21-O-C(=O)-Y22-所表示之基[式中,Y21及Y22各自獨立為可具有取代基之2價之烴基,O為氧原子,m’為0~3之整數]等。 Ya 21 is a divalent linking group containing a hetero atom, and a preferred one of the linking groups, for example, -O-, -C(=O)-O-, -C(=O)-, -OC (=O)-O-, -C(=O)-NH-, -NH-, -NH-C(=NH)-(H can be substituted by a substituent such as an alkyl group or a fluorenyl group), -S- , -S (= O) 2 - , - S (= O) 2 -O-, the formula -Y 21 -OY 22 -, - Y 21 -O -, - Y 21 -C (= O) -O- , -[Y 21 -C(=O)-O] m' -Y 22 - or -Y 21 -OC(=O)-Y 22 - the group represented by the formula [wherein, Y 21 and Y 22 are each independently A divalent hydrocarbon group which may have a substituent, O is an oxygen atom, m' is an integer of 0 to 3, and the like.

前述含雜原子之2價之連結基為-C(=O)-NH-、-NH-、-NH-C(=NH)-之情形,其H可被烷基、醯基等取代基所取代。該取代基(烷基、醯基等),以碳數為1~10者為佳,以1~8為更佳,以1~5為特佳。 When the divalent linking group containing the hetero atom is -C(=O)-NH-, -NH-, -NH-C(=NH)-, the H may be substituted by an alkyl group, a thiol group or the like. Replace. The substituent (alkyl group, mercapto group, etc.) is preferably one having a carbon number of from 1 to 10, more preferably from 1 to 8, and particularly preferably from 1 to 5.

式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-[Y21-C(=O)-O]m’-Y22- 或-Y21-O-C(=O)-Y22-中,Y21及Y22為,各自獨立之可具有取代基之2價之烴基。該2價之烴基,例如與前述2價之連結基之說明所列舉之「可具有取代基之2價之烴基」為相同之內容。 Formula -Y 21 -OY 22 -, -Y 21 -O-, -Y 21 -C(=O)-O-, -[Y 21 -C(=O)-O] m' -Y 22 - or - In Y 21 -OC(=O)-Y 22 -, Y 21 and Y 22 are each a divalent hydrocarbon group which may have a substituent. The divalent hydrocarbon group is the same as the "two-valent hydrocarbon group which may have a substituent" as exemplified in the description of the above-mentioned two-valent linking group.

Y21,以直鏈狀之脂肪族烴基為佳,以直鏈狀之伸烷基為較佳,以碳數1~5之直鏈狀之伸烷基為更佳,以伸甲基或伸乙基為特佳。 Y 21 is preferably a linear aliphatic hydrocarbon group, preferably a linear alkyl group, and preferably a linear alkyl group having 1 to 5 carbon atoms. Ethyl is especially good.

Y22,以直鏈狀或支鏈狀之脂肪族烴基為佳,以伸甲基、伸乙基或烷基伸甲基為更佳。該烷基伸甲基中之烷基,以碳數1~5之直鏈狀烷基為佳,以碳數1~3之直鏈狀烷基為較佳,以甲基為最佳。 Y 22 is preferably a linear or branched aliphatic hydrocarbon group, and more preferably a methyl group, an ethyl group or an alkyl group. The alkyl group in the alkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms, preferably a linear alkyl group having 1 to 3 carbon atoms, and most preferably a methyl group.

式-[Y21-C(=O)-O]m’-Y22-所表示之基中,m’為0~3之整數,以0~2之整數為較佳,以0或1為更佳,以1為特佳。即,式-[Y21-C(=O)-O]m’-Y22-所表示之基,以式-Y21-C(=O)-O-Y22-所表示之基為特佳。其中,又以式-(CH2)a’-C(=O)-O-(CH2)b’-所表示之基為佳。該式中,a’為1~10之整數,以1~8之整數為佳,以1~5之整數為較佳,以1或2為更佳,以1為最佳。b’為1~10之整數,以1~8之整數為佳,以1~5之整數為較佳,以1或2為更佳,以1為最佳。 In the formula represented by the formula -[Y 21 -C(=O)-O] m' -Y 22 -, m' is an integer of 0 to 3, preferably an integer of 0 to 2, preferably 0 or 1 Better, with 1 being especially good. That is, the group represented by the formula -[Y 21 -C(=O)-O] m' -Y 22 - is particularly preferably a group represented by the formula -Y 21 -C(=O)-OY 22 -. Among them, the group represented by the formula -(CH 2 ) a' -C(=O)-O-(CH 2 ) b' - is preferred. In the formula, a' is an integer of 1 to 10, preferably an integer of 1 to 8, preferably an integer of 1 to 5, more preferably 1 or 2, and most preferably 1. b' is an integer from 1 to 10, preferably from 1 to 8 integers, preferably from 1 to 5, more preferably from 1 or 2, and most preferably from 1.

本發明中,Ya21以單鍵,或酯鍵結[-C(=O)-O-]、醚鍵結(-O-)、直鏈狀或支鏈狀之伸烷基或該些之組合為佳。 In the present invention, Ya 21 is a single bond, or an ester bond [-C(=O)-O-], an ether bond (-O-), a linear or branched alkyl group or the like. The combination is better.

以下為上述通式(a2-1)所表示之結構單位中, 具有前述通式(a2-r-1)所表示之基的結構單位之具體例示。以下各式中,Rα表示氫原子、甲基或三氟甲基。 The following is a specific example of a structural unit having a group represented by the above formula (a2-r-1) in the structural unit represented by the above formula (a2-1). In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

(A)成份所具有之結構單位(a2)可為1種或2種以上皆可。 (A) The structural unit (a2) of the component may be one type or two or more types.

(A)成份為具有結構單位(a2)情形時之比例,相對於構成(A)成份之全結構單位而言,以5~70莫耳%為佳,以10~65莫耳%為較佳,以20~60莫耳%為更佳。 (A) The proportion of the component in the case of the structural unit (a2) is preferably from 5 to 70 mol%, preferably from 10 to 65 mol%, relative to the total structural unit constituting the component (A). It is better to use 20~60 mol%.

結構單位(a2)之比例為下限值以上時,可充分得到含有結構單位(a2)所可達成之效果,為上限值以下時,可取得與其他結構單位之平衡,而可使各種微影蝕刻特性及圖型形狀更為良好。 When the ratio of the structural unit (a2) is at least the lower limit value, the effect which can be achieved by the structural unit (a2) can be sufficiently obtained. When the ratio is equal to or less than the upper limit value, the balance with other structural units can be obtained, and various micro-structures can be obtained. The shadow etching characteristics and pattern shape are better.

(結構單位(a3)) (Structural unit (a3))

樹脂成份(A),亦可具有結構單位(a3)。結構單位(a3)為含有含極性基之脂肪族烴基的結構單位(其中,相當於上述結構單位(a1)、(a2)者除外)。 The resin component (A) may also have a structural unit (a3). The structural unit (a3) is a structural unit containing a polar group-containing aliphatic hydrocarbon group (excluding the above structural units (a1) and (a2)).

樹脂成份(A)具有結構單位(a3)之情形,可提高(A)成份之親水性,進而可提高解析性。 When the resin component (A) has a structural unit (a3), the hydrophilicity of the component (A) can be improved, and the resolution can be improved.

極性基,例如,羥基、氰基、羧基、烷基中之一部分氫原子被氟原子所取代之羥烷基等,特別是以羥基為佳。 The polar group is, for example, a hydroxy group such as a hydroxyl group, a cyano group, a carboxyl group or a part of a hydrogen atom in which an alkyl group is substituted by a fluorine atom, and particularly preferably a hydroxyl group.

脂肪族烴基,例如,碳數1~10之直鏈狀或支鏈狀之烴基(較佳為伸烷基),或,環狀脂肪族烴基(環式基)等。該環式基,可為單環式基亦可、多環式基亦可,例如,可由ArF準分子雷射用光阻組成物用之樹脂中,被多數提案之內容中,適當地選擇使用。該環式基,以多環式基者為佳,以碳數為7~30者為更佳。 The aliphatic hydrocarbon group is, for example, a linear or branched hydrocarbon group having 1 to 10 carbon atoms (preferably an alkylene group), or a cyclic aliphatic hydrocarbon group (cyclo) or the like. The ring group may be a monocyclic group or a polycyclic group. For example, it may be used in a resin for a photoresist composition for an ArF excimer laser, and is appropriately selected from the contents of most proposals. . The ring type is preferably a polycyclic type base, and more preferably a carbon number of 7 to 30.

其中,又以含有羥基、氰基、羧基,或含烷基中之一部分氫原子被氟原子所取代之羥烷基的脂肪族多環式基之丙烯酸酯所衍生之結構單位為較佳。該多環式基,可例如,由二環鏈烷、三環鏈烷、四環鏈烷等去除2個以上之氫原子所得之基等例示。具體而言,例如由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等多環鏈烷去除2個以上之氫原子所得之基等。該些多環式基之中,又以由金剛烷去除2個以上之氫原子所得之基、由降莰烷去除2個以上之氫原子所得之基、由四環十二烷去除2個以上之氫原子所得之基就工業上而言為更佳。 Among them, a structural unit derived from an aliphatic polycyclic group acrylate having a hydroxyl group, a cyano group, a carboxyl group, or a hydroxyalkyl group in which a part of hydrogen atoms of the alkyl group is substituted by a fluorine atom is preferred. The polycyclic group may be, for example, a group obtained by removing two or more hydrogen atoms from a bicycloalkane, a tricycloalkane or a tetracycloalkane. Specifically, for example, a group obtained by removing two or more hydrogen atoms from a polycyclic alkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane is used. Among these polycyclic groups, a group obtained by removing two or more hydrogen atoms from adamantane, a group obtained by removing two or more hydrogen atoms from norbornane, and two or more groups removed from tetracyclododecane The base derived from the hydrogen atom is industrially more preferable.

結構單位(a3),只要為含有含極性基之脂肪族烴基者之時,並未有特別之限定,而可使用任意之成份。 The structural unit (a3) is not particularly limited as long as it contains a polar group-containing aliphatic hydrocarbon group, and any component can be used.

結構單位(a3)中,以含有α位的碳原子所鍵結之氫原子可被取代基所取代之丙烯酸酯所衍生之結構單位,且含有含極性基之脂肪族烴基之結構單位為佳。 In the structural unit (a3), a hydrogen atom bonded to a carbon atom having an α-position may be a structural unit derived from an acrylate substituted with a substituent, and a structural unit containing a polar group-containing aliphatic hydrocarbon group is preferred.

結構單位(a3)中,含有含極性基之脂肪族烴基中之烴基為碳數1~10之直鏈狀或支鏈狀之烴基時,以由丙烯酸之羥基乙酯所衍生之結構單位為佳,該烴基為多環式基時,以下述式(a3-1)所表示之結構單位、式(a3-2)所表示之結構單位、式(a3-3)所表示之結構單位為較佳之例示。 In the structural unit (a3), when the hydrocarbon group in the aliphatic hydrocarbon group containing a polar group is a linear or branched hydrocarbon group having 1 to 10 carbon atoms, the structural unit derived from the hydroxyethyl acrylate is preferred. When the hydrocarbon group is a polycyclic group, the structural unit represented by the following formula (a3-1), the structural unit represented by the formula (a3-2), and the structural unit represented by the formula (a3-3) are preferred. Illustrative.

[式中,R與前述為相同之內容,j為1~3之整數,k為1~3之整數,t’為1~3之整數,l為1~5之整數,s為1~3之整數]。 [wherein, R is the same as the above, j is an integer from 1 to 3, k is an integer from 1 to 3, t' is an integer from 1 to 3, l is an integer from 1 to 5, and s is from 1 to 3. Integer].

式(a3-1)中,j以1或2為佳,以1為更佳。j為2之情形,以羥基鍵結於金剛烷基之3位與5位者為佳。j為1之情形,以羥基鍵結於金剛烷基之3位者為佳。 In the formula (a3-1), j is preferably 1 or 2, and more preferably 1 is used. In the case where j is 2, it is preferred that the hydroxyl group is bonded to the 3 and 5 positions of the adamantyl group. In the case where j is 1, it is preferred that the hydroxy group is bonded to the adamantyl group.

j以1為佳,特別是以羥基鍵結於金剛烷基之3位者為佳。 j is preferably 1 or more, particularly preferably a 3-hydroxyl group bonded to an adamantyl group.

式(a3-2)中,k以1為佳。氰基以鍵結於降莰基之5位或6位者為佳。 In the formula (a3-2), k is preferably 1. The cyano group is preferably bonded to the 5- or 6-position of the thiol group.

式(a3-3)中,t’以1為佳。l以1為佳。s以1為佳。該些中,以丙烯酸之羧基的末端鍵結2-降莰基或3-降莰基者為佳。氟化烷醇以鍵結於降莰基之5或6位者為佳。 In the formula (a3-3), t' is preferably 1. l is better than 1. s is better than 1. Among them, those in which a terminal of a carboxyl group of acrylic acid is bonded to a 2-norbornyl group or a 3-norinyl group are preferred. The fluorinated alkanol is preferably bonded to the 5 or 6 position of the thiol group.

樹脂成份(A)所含有之結構單位(a3),可為1種亦可、2種以上亦可。 The structural unit (a3) contained in the resin component (A) may be one type or two or more types.

樹脂成份(A)具有結構單位(a3)之情形之比例,相對於構成該樹脂成份(A)之全結構單位之合計,以1~50莫耳%為佳,以5~40莫耳%為較佳,以5~25莫耳%為更佳。 The proportion of the resin component (A) having the structural unit (a3) is preferably from 1 to 50 mol%, and from 5 to 40 mol%, based on the total of the total structural units constituting the resin component (A). Preferably, it is preferably 5 to 25 mol%.

結構單位(a3)之比例為下限值以上時,可充分得到含有結構單位(a3)所得之效果,為上限值以下時,可容易取得與其他結構單位之平衡。 When the ratio of the structural unit (a3) is at least the lower limit value, the effect obtained by the structural unit (a3) can be sufficiently obtained, and when it is equal to or less than the upper limit value, the balance with other structural units can be easily obtained.

(結構單位(a5)) (Structural unit (a5))

樹脂成份(A),可再含有具有含-SO2-之環式基的結構單位(a5)。 The resin component (A) may further contain a structural unit (a5) having a cyclic group containing -SO 2 -.

樹脂成份(A)所可具有之「含-SO2-之環式基」,係指,其環骨架中含有含-SO2-之環的環式基之意,具體而言為,-SO2-中之硫原子(S)為形成環式基之環骨架的一部份所得之環式基。其環骨架中,以含-SO2-之環作為一個環之方式計數,僅為該環之情形稱為單環式 基,再含有其他環結構之情形,無論其結構為何,皆稱為多環式基。含-SO2-之環式基,可為單環式基亦可、多環式基亦可。 The "cyclic group containing -SO 2 -" which the resin component (A) may have means a ring group containing a ring containing -SO 2 - in the ring skeleton, specifically, -SO The sulfur atom (S) in 2 - is a cyclic group derived from a part of a ring skeleton which forms a ring group. In the ring skeleton, the ring containing -SO 2 - is counted as a ring, and only the case of the ring is called a monocyclic group, and in the case of other ring structures, regardless of its structure, it is called Ring base. The cyclic group containing -SO 2 - may be a monocyclic group or a polycyclic group.

含-SO2-之環式基,特別是其環骨架中含-O-SO2-之環式基,即,以含有-O-SO2-中之-O-S-形成為環骨架之一部份的磺內酯(sultone)環的環式基為佳。含-SO2-之環式基,更具體而言,例如下述通式(a5-r-1)~(a5-r-4)所表示之基等。 Containing -SO 2 - group of cyclic, especially cyclic skeleton containing -O-SO 2 - group of cyclic, i.e., containing -O-SO 2 - -OS- in the skeleton of the ring is formed as a The cyclic group of the sultone ring is preferred. The ring group containing -SO 2 -, more specifically, for example, a group represented by the following formula (a5-r-1) to (a5-r-4).

[式中,Ra’51各自獨立為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基;R”為氫原子或烷基;A”為可含有氧原子或硫原子之碳數1~5之伸烷基、氧原子或硫原子,n’為0~2之整數]。 [wherein, Ra' 51 is each independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group; "A hydrogen atom or an alkyl group; A" is an alkyl group having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, an oxygen atom or a sulfur atom, and n' is an integer of 0 to 2].

前述通式(a5-r-1)~(a5-r-4)中,A”與前述通式(a2-r-1)~(a2-r-7)中之A”為相同之內容。Ra’51中之烷基、烷氧基、鹵素原子、鹵化烷基、-COOR”、-OC(=O)R”、羥烷基,與前述通式(a2-r-1)~(a2-r-7)中之Ra’21為相同之內容。 In the above formula (a5-r-1) to (a5-r-4), A" is the same as A' in the above formula (a2-r-1) to (a2-r-7). An alkyl group, an alkoxy group, a halogen atom, an alkyl halide group, a -COOR", -OC(=O)R", a hydroxyalkyl group in Ra' 51 , and the above formula (a2-r-1) to (a2) Ra' 21 in -r-7) is the same content.

以下將列舉通式(a5-r-1)~(a5-r-4)所表示之基 的具體例。式中之「Ac」,為表示乙醯基。 The base represented by the general formula (a5-r-1) to (a5-r-4) will be listed below. Specific example. In the formula, "Ac" means an ethyl group.

結構單位(a5),只要為具有含-SO2-之環式基的單位時,其他部份之結構並未有特別之限定,例如,前述通式(a2-1)中的Ra21為前述通式(a5-r-1)~(a5-r-4)之任一者所表示之基的結構單位等。 The structural unit (a5) is not particularly limited as long as it is a unit having a cyclic group containing -SO 2 -, for example, Ra 21 in the above formula (a2-1) is the aforementioned A structural unit of a group represented by any one of the formulae (a5-r-1) to (a5-r-4).

含-SO2-之環式基,於上述之中,又以前述通式(a5-r-1)所表示之基為佳,以使用由前述化學式(r-sl-1-1)、(r-sl-1-18)、(r-sl-3-1)及(r-sl-4-1)之任一者所表示之基所構成之群所選出之至少一種者為佳,以前述化學式(r-sl-1-1)所表示之基為最佳。 The ring group containing -SO 2 -, in the above, is preferably a group represented by the above formula (a5-r-1), and is used by the aforementioned chemical formula (r-sl-1-1), At least one selected from the group consisting of: r-sl-1-18), (r-sl-3-1), and (r-sl-4-1) is preferred. The group represented by the aforementioned chemical formula (r-sl-1-1) is optimal.

(A)成份所具有之結構單位(a5),可為1種或2種以上皆可。 (A) The structural unit (a5) of the component may be one type or two or more types.

(A)成份具有結構單位(a5)之情形,結構單位(a5)之比例,相對於構成該(A)成份之全結構單位之合計,以5~70莫耳%為佳,以5~60莫耳%為較佳,以10~55莫耳%為更佳。 (A) In the case where the component has a structural unit (a5), the ratio of the structural unit (a5) is preferably 5 to 70 mol%, and 5 to 60, based on the total of the total structural units constituting the component (A). Molar% is preferred, preferably 10 to 55 mol%.

結構單位(a5)之比例為下限值以上時,可充分得到含有結構單位(a2)所可達成之效果,為上限值以下時,可取得與其他結構單位之平衡,而可使各種微影蝕刻特性及圖型形狀更為良好。 When the ratio of the structural unit (a5) is at least the lower limit value, the effect that the structural unit (a2) can be obtained can be sufficiently obtained, and when it is equal to or less than the upper limit value, the balance with other structural units can be obtained, and various micro-structures can be obtained. The shadow etching characteristics and pattern shape are better.

<鹼可溶性樹脂(C)> <alkali soluble resin (C)>

本發明之光阻組成物,為提升耐龜裂性等目的,以再含有鹼可溶性樹脂(C)為佳。其中,鹼可溶性樹脂係指,將使用樹脂濃度20質量%之樹脂溶液(溶劑:丙二醇單甲醚乙酸酯),於基板上形成膜厚1μm之樹脂膜,浸漬於2.38質量%之TMAH水溶液1分鐘之際,可溶解0.01μm以上者之意。鹼可溶性樹脂(C),以由酚醛清漆樹脂(Cnv1)、聚羥基苯乙烯樹脂(Cphs1),及丙烯酸樹脂(Cac1)所成群所選出之至少一種的樹脂為佳。 The photoresist composition of the present invention preferably contains an alkali-soluble resin (C) for the purpose of improving crack resistance and the like. In the case of the alkali-soluble resin, a resin solution having a resin concentration of 20% by mass (solvent: propylene glycol monomethyl ether acetate) is used, and a resin film having a thickness of 1 μm is formed on the substrate, and immersed in a 2.38 mass% TMAH aqueous solution 1 In the minute, it can dissolve 0.01μm or more. The alkali-soluble resin (C) is preferably a resin selected from the group consisting of novolac resin (Cnv1), polyhydroxystyrene resin (Cphs1), and acrylic resin (Cac1).

[酚醛清漆樹脂(Cnv1)] [Novolak resin (Cnv1)]

酚醛清漆樹脂(Cnv1),例如,使具有酚性羥基之芳香族化合物(以下,亦簡稱為「酚類」)與醛類於酸觸媒下,經由加成縮合所得者。 The novolak resin (Cnv1) is obtained by, for example, condensing an aromatic compound having a phenolic hydroxyl group (hereinafter also referred to as "phenol") with an aldehyde under an acid catalyst.

上述酚類,例如,酚、o-甲酚、m-甲酚、p-甲酚、o-乙酚、m-乙酚、p-乙酚、o-丁酚、m-丁酚、p-丁酚、2,3-二甲酚、2,4-二甲酚、2,5-二甲酚、2,6-二甲酚、3,4-二甲酚、3,5-二甲酚、2,3,5-三甲基酚、3,4,5-三甲基酚、p-苯基酚、間苯二酚、對苯二酚、對苯二酚單甲醚、五倍子酚、氯基單乙醇胺、聯苯酚(hydroxydiphenyl)、雙酚A、沒食子酸(gallic acid)、沒食子酸(gallic acid)酯、α-萘酚、β-萘酚等。 The above phenols, for example, phenol, o-cresol, m-cresol, p-cresol, o-acetol, m-ethylphenol, p-ethylphenol, o-butanol, m-butanol, p- Butanol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol , 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, gallicol, Chloromonoethanolamine, hydroxydiphenyl, bisphenol A, gallic acid, gallic acid ester, α-naphthol, β-naphthol, and the like.

上述醛類,例如,甲醛、糠醛、苯甲醛、硝基苯甲醛、乙醛等。 The above aldehydes are, for example, formaldehyde, furfural, benzaldehyde, nitrobenzaldehyde, acetaldehyde and the like.

加成縮合反應時之觸媒,並未有特別限定之成份,例如,酸觸媒,可使用鹽酸、硝酸、硫酸、甲酸、草酸、乙酸等。 The catalyst for the addition condensation reaction is not particularly limited. For example, an acid catalyst may be hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid or the like.

又,使用o-甲酚時,經由樹脂中之羥基的氫原子被其他取代基所取代,或使用高體積密度之醛類時,可使酚醛清漆樹脂之柔軟性再向上提升。 Further, when o-cresol is used, when the hydrogen atom of the hydroxyl group in the resin is substituted with another substituent, or when a high bulk density aldehyde is used, the softness of the novolac resin can be further increased.

該酚醛清漆樹脂(Cnv1)之質量平均分子量,以1000~50000為佳。 The mass average molecular weight of the novolak resin (Cnv1) is preferably from 1,000 to 50,000.

[聚羥基苯乙烯樹脂(Cphs1)] [Polyhydroxystyrene resin (Cphs1)]

構成聚羥基苯乙烯樹脂(Cphs1)之羥基苯乙烯系化合物,例如,p-羥基苯乙烯、α-甲基羥基苯乙烯、α-乙基羥基苯乙烯等。 A hydroxystyrene compound constituting a polyhydroxystyrene resin (Cphs1), for example, p-hydroxystyrene, α-methylhydroxystyrene, α-ethylhydroxystyrene or the like.

又,聚羥基苯乙烯樹脂(Cphs1),以可與苯乙烯樹脂形成共聚物者為佳。構成該些苯乙烯樹脂之苯乙烯系化合物,例如,苯乙烯、氯基苯乙烯、氯甲基苯乙烯、乙烯基甲苯、α-甲基苯乙烯等。 Further, the polyhydroxystyrene resin (Cphs1) is preferably one which forms a copolymer with a styrene resin. The styrene-based compound constituting the styrene resin is, for example, styrene, chlorostyrene, chloromethylstyrene, vinyltoluene or α-methylstyrene.

此聚羥基苯乙烯樹脂(Cphs1)之質量平均分子量,以1000~50000為佳。 The polyhydroxystyrene resin (Cphs1) preferably has a mass average molecular weight of from 1,000 to 50,000.

[丙烯酸樹脂(Cac1)] [Acrylic Resin (Cac1)]

丙烯酸樹脂(Cac1),以含有具有醚鍵結之聚合性化合物所衍生之結構單位,及具有羧基之聚合性化合物所衍生之結構單位者為佳。 The acrylic resin (Cac1) is preferably a structural unit derived from a polymerizable compound having an ether bond and a structural unit derived from a polymerizable compound having a carboxyl group.

上述具有醚鍵結之聚合性化合物,例如,2-甲氧基乙基(甲基)丙烯酸酯、甲氧基三乙二醇(甲基)丙烯酸酯、3-甲氧基丁基(甲基)丙烯酸酯、乙基卡必醇基(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、四氫糠基(甲基)丙烯酸酯等具有醚鍵結及酯鍵結之(甲基)丙烯酸衍生物等例示。上述具有醚鍵結之聚合性化合物,較佳為,2-甲氧基乙基丙烯酸酯、甲氧基三乙二醇丙烯酸酯。該些聚合性化合物,可單獨使用亦可,或將2種以上組合使用亦可。 The above polymerizable compound having an ether bond, for example, 2-methoxyethyl (meth) acrylate, methoxy triethylene glycol (meth) acrylate, 3-methoxy butyl (methyl) Acrylate, ethyl carbitol (meth) acrylate, phenoxy polyethylene glycol (meth) acrylate, methoxy polypropylene glycol (meth) acrylate, tetrahydrofurfuryl (methyl) An example of a (meth)acrylic acid derivative having an ether bond or an ester bond such as an acrylate. The above polymerizable compound having an ether bond is preferably 2-methoxyethyl acrylate or methoxy triethylene glycol acrylate. These polymerizable compounds may be used singly or in combination of two or more kinds.

上述具有羧基之聚合性化合物,例如,丙烯酸、甲基丙烯酸、巴豆酸等單羧酸類;馬來酸、富馬酸、衣康酸等二羧酸類;2-甲基丙烯醯氧乙基琥珀酸、2-甲基丙烯醯氧乙基馬來酸、2-甲基丙烯醯氧乙基苯二甲酸、2-甲基丙烯醯氧乙基六氫苯二甲酸等具有羧基及酯鍵結之化合物;等例示。上述具有羧基之聚合性化合物,較佳為,丙烯酸、甲基丙烯酸。該些聚合性化合物,可單獨使用亦可,或將2種以上組合使用亦可。 The above polymerizable compound having a carboxyl group, for example, a monocarboxylic acid such as acrylic acid, methacrylic acid or crotonic acid; a dicarboxylic acid such as maleic acid, fumaric acid or itaconic acid; 2-methylpropenyloxyethyl succinic acid; a compound having a carboxyl group and an ester bond, such as 2-methacryloyloxyethyl maleic acid, 2-methylpropenyloxyethyl phthalic acid, 2-methylpropenyl oxyethyl hexahydrophthalic acid ; and so on. The above polymerizable compound having a carboxyl group is preferably acrylic acid or methacrylic acid. These polymerizable compounds may be used singly or in combination of two or more kinds.

該丙烯酸樹脂(Cac1)之質量平均分子量,以50000~800000為佳。 The acrylic resin (Cac1) preferably has a mass average molecular weight of 50,000 to 800,000.

鹼可溶性樹脂(C)之含量,相對於上述樹脂成份(A)100質量份,較佳為5~200質量份,更佳為10~180質量份。鹼可溶性樹脂(C)之含量,相對於樹脂成份(A)100質量份為5質量份以上時,可提高耐龜裂性,為200質量份以下時,具有可防止顯影時膜消減之傾向。 The content of the alkali-soluble resin (C) is preferably 5 to 200 parts by mass, more preferably 10 to 180 parts by mass, per 100 parts by mass of the resin component (A). When the content of the alkali-soluble resin (C) is 5 parts by mass or more based on 100 parts by mass of the resin component (A), the crack resistance can be improved, and when it is 200 parts by mass or less, the film tends to be prevented from being reduced during development.

又,使用鹼可溶性樹脂(C)之情形,以將酚醛清漆樹脂(Cnv1)及聚羥基苯乙烯樹脂(Cphs1),與上述丙烯酸樹脂(Aac1)組合使用為佳。此情形中,相對於該些樹脂之合計,丙烯酸樹脂所佔之比例,以5~80質量%為佳,以10~70質量%為較佳,以10~40質量%為更佳。又,酚醛清漆樹脂之比例,5~80質量%為佳,20~70質量%為較佳,45~65質量%為更佳。又,聚羥基苯乙烯樹脂之比例,5~60質量%為佳,5~35質量%為較佳,5~30質量%為更佳。於該些比例範圍時,酸產生劑可於厚膜光阻層內產生均勻地分散。 Further, in the case of using the alkali-soluble resin (C), it is preferred to use a novolak resin (Cnv1) and a polyhydroxystyrene resin (Cphs1) in combination with the above acrylic resin (Aac1). In this case, the proportion of the acrylic resin is preferably from 5 to 80% by mass, more preferably from 10 to 70% by mass, even more preferably from 10 to 40% by mass, based on the total of the resins. Further, the proportion of the novolac resin is preferably from 5 to 80% by mass, more preferably from 20 to 70% by mass, and most preferably from 45 to 65% by mass. Further, the ratio of the polyhydroxystyrene resin is preferably 5 to 60% by mass, preferably 5 to 35% by mass, more preferably 5 to 30% by mass. At these ratios, the acid generator can be uniformly dispersed within the thick film photoresist layer.

<光反應性抑制劑(D0)> <Photoreactive inhibitor (D0)>

本發明之光阻組成物,為含有光反應型抑制劑(D0)(以下,亦稱為「(D0)成份」)。 The photoresist composition of the present invention contains a photoreactive inhibitor (D0) (hereinafter also referred to as "(D0) component").

「抑制劑」為,具有作為酸擴散控制劑,即可捕集經由曝光而由後述(B)成份等所產生之酸者。 The "inhibitor" is an acid diffusion control agent that traps an acid generated by exposure (B) or the like as described later.

「光反應性抑制劑」,於曝光前(或未曝光部中)具有作為抑制劑之作用,於曝光(EB、EUV等輻射線照射)後不具有作為抑制劑作用者。 The "photoreactive inhibitor" has an action as an inhibitor before exposure (or in an unexposed portion), and does not act as an inhibitor after exposure (radiation irradiation such as EB or EUV).

本發明之光阻組成物中,(D0)成份為至少含有下述通式(d0)所表示之化合物(D0-1)者。如此,於光阻圖型形成時可使感度或圖型形狀更為優良。 In the photoresist composition of the present invention, the component (D0) is at least one compound (D0-1) represented by the following formula (d0). In this way, the sensitivity or pattern shape can be made better when the photoresist pattern is formed.

[式中,R1、R2為可具有取代基之碳數1~10之烷基,R3、R4為可具有取代基之碳數2~10之烷基,R3與R4,可與其所鍵結之硫原子共同形成環,X-為對陰離子]。 [wherein, R 1 and R 2 are an alkyl group having 1 to 10 carbon atoms which may have a substituent, and R 3 and R 4 are an alkyl group having 2 to 10 carbon atoms which may have a substituent, and R 3 and R 4 , It may form a ring together with the sulfur atom to which it is bonded, and X - is a pair of anions].

式(d0)中,R1、R2為可具有取代基之碳數1~10之烷基。R1、R2中,碳數1~10之烷基,可例如碳數1~5之直鏈狀烷基。具體而言,例如,甲基、乙基、n-丙基、n-丁基、n-戊基等。該些之中,又以甲基、乙基或n-丁基為佳,以n-丁基為較佳。 In the formula (d0), R 1 and R 2 are an alkyl group having 1 to 10 carbon atoms which may have a substituent. In R 1 and R 2 , an alkyl group having 1 to 10 carbon atoms may be, for example, a linear alkyl group having 1 to 5 carbon atoms. Specifically, for example, a methyl group, an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group or the like. Among these, a methyl group, an ethyl group or an n-butyl group is preferred, and an n-butyl group is preferred.

式(d0)中,R1、R2中,碳數1~10之烷基,可為支鏈狀或環狀烷基。 In the formula (d0), among R 1 and R 2 , an alkyl group having 1 to 10 carbon atoms may be a branched or cyclic alkyl group.

該支鏈狀烷基,以碳數為3~10為佳,以3~8為較佳。具體而言,例如,異丙基、異丁基、tert-丁基、異戊基、新戊基等,又以異丙基為最佳。 The branched alkyl group preferably has a carbon number of 3 to 10 and preferably 3 to 8. Specifically, for example, isopropyl, isobutyl, tert-butyl, isopentyl, neopentyl or the like is preferably isopropyl.

該環狀烷基,以碳數3~10為佳,以4~10為較佳。 具體而言,例如,由環戊烷、環己烷等單環鏈烷,或金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。構成環狀烷基之環的碳原子的一部份,可被醚性氧原子(-O-)所取代。 The cyclic alkyl group preferably has a carbon number of 3 to 10 and preferably 4 to 10. Specifically, for example, one monocyclic alkane such as cyclopentane or cyclohexane or one polycyclic alkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane is removed. The base obtained by the above hydrogen atom and the like. A part of the carbon atom constituting the ring of the cyclic alkyl group may be substituted by an etheric oxygen atom (-O-).

式(d0)中,R1、R2所可具有之取代基,例 如,烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基等。 In the formula (d0), R 1 and R 2 may have a substituent such as an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group or the like.

作為前述取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為前述取代基之烷氧基,以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 The alkoxy group as the above substituent is preferably an alkoxy group having 1 to 5 carbon atoms, and a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, or a tert group. The -butoxy group is preferred, and the methoxy group and the ethoxy group are most preferred.

作為前述取代基之鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 The halogen atom as the substituent, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom.

作為前述取代基之鹵化烷基,例如,前述烷基中之氫原子的一部份或全部被前述鹵素原子所取代之基等。 The halogenated alkyl group as the above substituent is, for example, a group in which a part or all of a hydrogen atom in the above alkyl group is substituted by the aforementioned halogen atom.

環狀脂肪族烴基,構成其環結構之碳原子的一部份可被含有雜原子之取代基所取代。含有該雜原子之取代基,以-O-、-C(=O)-O-、-S-、-S(=O)2-、-S(=O)2-O-為佳。 The cyclic aliphatic hydrocarbon group, a part of the carbon atom constituting the ring structure thereof may be substituted by a substituent containing a hetero atom. The substituent containing the hetero atom is preferably -O-, -C(=O)-O-, -S-, -S(=O) 2 -, -S(=O) 2 -O-.

本發明中,R1、R2為碳數1~8,較佳為碳數1~5,最佳以碳數3~5之烷基為佳。又,以支鏈狀或鏈狀烷基為佳,以鏈狀烷基者為較佳。又,以無取代之烷基為佳。 In the present invention, R 1 and R 2 have a carbon number of 1 to 8, preferably a carbon number of 1 to 5, and most preferably an alkyl group having 3 to 5 carbon atoms. Further, a branched or chain alkyl group is preferred, and a chain alkyl group is preferred. Further, an unsubstituted alkyl group is preferred.

式(d0)中,R3、R4為可具有取代基之碳數2~10之烷基,R3與R4,可與其所鍵結之硫原子共同形成環。 In the formula (d0), R 3 and R 4 are an alkyl group having 2 to 10 carbon atoms which may have a substituent, and R 3 and R 4 may form a ring together with the sulfur atom to which they are bonded.

R3、R4中,可具有取代基之碳數2~10之烷基,例如,碳數2~5之直鏈狀烷基等。碳數2~5之直鏈狀烷基,例如,乙基、n-丙基、n-丁基、n-戊基等。該些 之中,又以甲基、乙基或n-丁基為佳,以n-丁基為較佳。 In R 3 and R 4 , an alkyl group having 2 to 10 carbon atoms which may have a substituent, for example, a linear alkyl group having 2 to 5 carbon atoms. A linear alkyl group having 2 to 5 carbon atoms, for example, an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group or the like. Among these, a methyl group, an ethyl group or an n-butyl group is preferred, and an n-butyl group is preferred.

R3、R4為碳數1~10之烷基,其可為支鏈狀或環狀之烷基。R3、R4中之碳數1~10之支鏈狀或環狀烷基的說明,係與前述R1、R2中之說明為相同之內容。 R 3 and R 4 are an alkyl group having 1 to 10 carbon atoms, which may be a branched or cyclic alkyl group. The description of the branched or cyclic alkyl group having 1 to 10 carbon atoms in R 3 and R 4 is the same as those described in the above R 1 and R 2 .

R3、R4可具有取代基,R3、R4所可具有之取代基之說明,係與前述R1、R2中之說明為相同之內容。 R 3 and R 4 may have a substituent, and the substituents which R 3 and R 4 may have are the same as those described for R 1 and R 2 described above.

本發明中,式(d0)中,R3、R4為碳數2~8、較佳為碳數2~6、最佳為3~5之烷基為宜。又,以支鏈狀或鏈狀烷基為佳,以鏈狀烷基者為較佳。又,以無取代之烷基為佳。 In the present invention, in the formula (d0), R 3 and R 4 are preferably an alkyl group having 2 to 8 carbon atoms, preferably 2 to 6 carbon atoms, most preferably 3 to 5 carbon atoms. Further, a branched or chain alkyl group is preferred, and a chain alkyl group is preferred. Further, an unsubstituted alkyl group is preferred.

前述通式(d0)中,X-為對陰離子。X-之對陰離子,並未有特別之限定,例如,可使用以往作為光阻組成物之抑制劑所使用的作為光分解性鹼(光反應型抑制劑)等之陰離子部之已知的對陰離子。該些對陰離子又以下述通式(d1-1)~(d1-3)之任一者所表示之陰離子為佳。 In the above formula (d0), X - is a counter anion. X - of the anion is not of particularly defined, for example, may be used conventionally known as an inhibitor is used as a resist composition photodegradable base (photoreactive inhibitor), etc. The anionic portion of the Anion. The anion is preferably an anion represented by any one of the following general formulae (d1-1) to (d1-3).

[式(d1-1)~(d1-3)中,Rd1~Rd4為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基。其中,式(d1-2)中之Rd2中,S原子所鄰接之碳原 子為不鍵結氟原子者。Yd1為單鍵,或2價之連結基]。 [In the formulae (d1-1) to (d1-3), Rd 1 to Rd 4 are a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain olefin which may have a substituent base. In the case of Rd 2 in the formula (d1-2), the carbon atom adjacent to the S atom is a fluorine atom not bonded. Yd 1 is a single bond, or a divalent linking group].

(d1-1)所表示之陰離子 Anion represented by (d1-1)

式(d1-1)中,Rd1為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,R101為相同之內容。 Formula (D1-1) in, Rd 1 is a cyclic group may have a substituent group, the group may have a substituent of an alkyl chain, or a chain of the substituent group of the alkenyl group, R 101 is the same as the contents.

該些之中,又以Rd1為,可具有取代基之芳香族烴基、可具有取代基之脂肪族環式基,或可具有取代基之鏈狀烴基為佳。該些之基所可具有之取代基,又以羥基、氟原子或氟化烷基為佳。 Among these, R 1 is an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a chain hydrocarbon group which may have a substituent. The substituents may have a substituent, and a hydroxyl group, a fluorine atom or a fluorinated alkyl group is preferred.

前述芳香族烴基以苯基或萘基為較佳。 The aromatic hydrocarbon group is preferably a phenyl group or a naphthyl group.

前述脂肪族環式基,以由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基為較佳。 The aliphatic cyclic group is preferably a group obtained by removing one or more hydrogen atoms from a polycyclic alkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane.

前述鏈狀之烴基,例如以鏈狀烷基為佳。鏈狀烷基,以碳數為1~10為佳,具體而言,例如,甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基等之直鏈狀烷基;1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等支鏈狀烷基;等例示。 The aforementioned chain hydrocarbon group is preferably, for example, a chain alkyl group. The chain alkyl group preferably has a carbon number of 1 to 10, specifically, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, or the like. Linear alkyl; 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1 a branched alkyl group such as ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl or 4-methylpentyl; and the like.

前述鏈狀烷基在具有氟原子或氟化烷基的氟化烷基作為取代基之情形,氟化烷基之碳數以1~11為佳,以1~8為較佳,以1~4為更佳。該氟化烷基,可含 有氟原子以外的原子。氟原子以外的原子,例如氧原子、碳原子、氫原子、硫原子、氮原子等。 In the case where the chain alkyl group has a fluorinated alkyl group having a fluorine atom or a fluorinated alkyl group as a substituent, the carbon number of the fluorinated alkyl group is preferably from 1 to 11, more preferably from 1 to 8, and 1 to 4 is better. The fluorinated alkyl group may contain There are atoms other than fluorine atoms. An atom other than a fluorine atom, for example, an oxygen atom, a carbon atom, a hydrogen atom, a sulfur atom, a nitrogen atom or the like.

Rd1,以構成直鏈狀烷基的一部份或全部的氫原子被氟原子所取代之氟化烷基為佳,以構成直鏈狀烷基的全部氫原子被氟原子所取代之氟化烷基(直鏈狀之全氟烷基)為佳。 Rd 1 is preferably a fluorinated alkyl group in which a part or all of hydrogen atoms constituting a linear alkyl group is substituted by a fluorine atom, so that all hydrogen atoms constituting the linear alkyl group are replaced by fluorine atoms. An alkyl group (linear perfluoroalkyl group) is preferred.

以下為通式(d1-1)所表示之陰離子的較佳具體例示。 The following is a preferred specific example of the anion represented by the formula (d1-1).

(d1-2)所表示之陰離子 (d1-2) anion represented by

式(d1-2)中,Rd2為,可具有取代基之環式基、可具 有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,例如與R101為相同之內容。 In the formula (d1-2), Rd 2 is a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, for example, the same as R 101 content.

其中,Rd2中,S原子所鄰接之碳原子上為不鍵結氟原子(未被氟所取代)者。如此,可使(d1-2)成份的陰離子形成適度的弱酸陰離子,而提高(D)成份之抑制能力。 Among them, in Rd 2 , the carbon atom adjacent to the S atom is not bonded to the fluorine atom (not replaced by fluorine). Thus, the anion of the component (d1-2) can be formed into a moderately weak acid anion, and the ability to suppress the component (D) can be improved.

Rd2,以可具有取代基之脂肪族環式基為佳,以由金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等去除1個以上之氫原子所得之基(可具有取代基);莰烷等去除1個以上之氫原子所得之基為較佳。 Rd 2 is preferably an aliphatic cyclic group which may have a substituent, and is obtained by removing one or more hydrogen atoms from adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane. The group (which may have a substituent); a group obtained by removing one or more hydrogen atoms such as decane is preferred.

Rd2之烴基可具有取代基,該取代基與前述式(d1-1)之Rd1中的烴基(芳香族烴基、脂肪族烴基)所可具有之取代基為相同之內容。 The hydrocarbon group of Rd 2 may have a substituent which is the same as the substituent which the hydrocarbon group (aromatic hydrocarbon group, aliphatic hydrocarbon group) in Rd 1 of the above formula (d1-1) may have.

以下為通式(d1-2)所表示之陰離子的較佳具體例示。 The following is a preferred specific example of the anion represented by the formula (d1-2).

(d1-3)所表示之陰離子 Anion represented by (d1-3)

式(d1-3)中,Rd3為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,其例如與R101為相同之內容等,以含有氟原子之環式基、鏈狀烷基,或鏈狀之烯基為佳。其中又以氟化烷基為佳,以與前述Rd1之氟化烷基為相同內容者為較佳。 In the formula (d1-3), Rd 3 is a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, which is, for example, the same as R 101 The content and the like are preferably a cyclic group containing a fluorine atom, a chain alkyl group, or a chain-like alkenyl group. Among them, a fluorinated alkyl group is preferred, and a fluorinated alkyl group of the above Rd 1 is preferred.

式(d1-3)中,Rd4為,可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,例如與R101為相同之內容。 In the formula (d1-3), Rd 4 is a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, for example, the same as R 101 content.

其中,又以可具有取代基之烷基、烷氧基、烯基、環式基為佳。 Among them, an alkyl group, an alkoxy group, an alkenyl group or a cyclic group which may have a substituent is preferred.

Rd4中之烷基,以碳數1~5之直鏈狀或支鏈狀烷基為佳,具體而言,例如,甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。Rd4之烷基中的氫原子之一部份可被羥基、氰基等所取代。 The alkyl group in Rd 4 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, specifically, for example, a methyl group, an ethyl group, a propyl group, an isopropyl group or an n-butyl group. Isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, and the like. A part of a hydrogen atom in the alkyl group of Rd 4 may be substituted with a hydroxyl group, a cyano group or the like.

Rd4中之烷氧基,以碳數1~5之烷氧基為佳,碳數1~5之烷氧基,具體而言,例如,甲氧基、乙氧基、n-丙 氧基、iso-丙氧基、n-丁氧基、tert-丁氧基等例示。其中,又以甲氧基、乙氧基為佳。 The alkoxy group in Rd 4 is preferably an alkoxy group having 1 to 5 carbon atoms and an alkoxy group having 1 to 5 carbon atoms, specifically, for example, a methoxy group, an ethoxy group or an n-propoxy group. Iso-propoxy, n-butoxy, tert-butoxy and the like are exemplified. Among them, methoxy and ethoxy groups are preferred.

Rd4中之烯基,例如與上述R101為相同之內容等,又以乙烯基、丙烯基(烯丙基)、1-甲基丙烯基、2-甲基丙烯基為佳。該些之基所可再具有之取代基,例如可再具有碳數1~5之烷基或碳數1~5之鹵化烷基。 The alkenyl group in Rd 4 is, for example, the same as the above R 101 , and is preferably a vinyl group, a propenyl group (allyl group), a 1-methylpropenyl group or a 2-methylpropenyl group. Further, the base may have a substituent such as an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms.

Rd4中之環式基,例如與上述R101為相同之內容等,又以由環戊烷、環己烷、金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等環鏈烷去除1個以上的氫原子所得之脂環式基,或苯基、萘基等芳香族基為佳。Rd4為脂環式基之情形,光阻組成物於可良好地溶解於有機溶劑之狀態下,而可使微影蝕刻特性更為優良。又,Rd4為芳香族基之情形,於使用EUV等作為曝光光源之微影蝕刻中,該光阻組成物具有優良之光吸收效率,而使感度、微影蝕刻特性更為優良。 The ring group in Rd 4 is, for example, the same as R 101 described above, and is further composed of cyclopentane, cyclohexane, adamantane, norbornane, isodecane, tricyclodecane, tetracyclic An alicyclic group obtained by removing one or more hydrogen atoms such as a cycloalkane such as an alkane or an aromatic group such as a phenyl group or a naphthyl group is preferred. When Rd 4 is an alicyclic group, the photoresist composition can be well dissolved in an organic solvent, and the lithography etching property can be further improved. Further, in the case where Rd 4 is an aromatic group, in the lithography etching using EUV or the like as an exposure light source, the photoresist composition has excellent light absorption efficiency, and the sensitivity and lithography etching characteristics are further improved.

式(d1-3)中,Yd1為單鍵,或2價之連結基。 In the formula (d1-3), Yd 1 is a single bond or a divalent linking group.

Yd1中之2價之連結基,並未有特別之限定,例如,可具有取代基之2價之烴基(脂肪族烴基、芳香族烴基)、含有雜原子之2價之連結基等。該些分別與前述式(a2-1)中之Ya21的2價之連結基之說明所列舉之內容為相同之內容。 The divalent linking group in Yd 1 is not particularly limited, and examples thereof include a divalent hydrocarbon group (aliphatic hydrocarbon group or aromatic hydrocarbon group) having a substituent, and a divalent linking group containing a hetero atom. These contents are the same as those described in the description of the two-valent linking group of Ya 21 in the above formula (a2-1).

Yd1,以羰基、酯鍵結、醯胺鍵結、伸烷基或該些之組合為佳。伸烷基,以直鏈狀或支鏈狀之伸烷基為較佳,以伸甲基或伸乙基為更佳。 Yd 1 is preferably a carbonyl group, an ester bond, a guanamine bond, an alkyl group or a combination thereof. The alkyl group is preferably a linear or branched alkyl group, and a methyl group or an ethyl group is more preferred.

以下為通式(d1-3)所表示之陰離子的較佳具體例示。 The following is a preferred specific example of the anion represented by the formula (d1-3).

以下為通式(d0)所表示之化合物的具體例示。 The following is a specific illustration of the compound represented by the formula (d0).

(D0)成份之含量,相對於(A)成份100質量份,以0.01~10質量份為佳,以0.05~5.0質量份為較佳,以0.1~3.0質量份為更佳。於上述範圍之下限值以上時,特別是可得到良好的微影蝕刻特性及光阻圖型形狀。於前述範圍之上限值以下時,可維持良好的感度,且具有優良之產率。 The content of the component (D0) is preferably 0.01 to 10 parts by mass, more preferably 0.05 to 5.0 parts by mass, even more preferably 0.1 to 3.0 parts by mass, per 100 parts by mass of the component (A). When it is more than the lower limit of the above range, in particular, good lithographic etching characteristics and a resist pattern shape can be obtained. When it is below the upper limit of the above range, good sensitivity can be maintained and an excellent yield can be obtained.

((D2)成份) ((D2) component)

(D)成份,可再含有不相當於上述(D0)成份之含氮有機化合物成份(以下,亦稱為(D2)成份)。 The component (D) may further contain a nitrogen-containing organic compound component (hereinafter, also referred to as (D2) component) which is not equivalent to the above (D0) component.

(D2)成份,只要為具有酸擴散控制劑之作用者,且不相當於(D1)成份者之時,則並未有特別之限定,其可使用任意之公知成份。其中,又以脂肪族胺,特別是以二級脂 肪族胺或三級脂肪族胺為佳。 The component (D2) is not particularly limited as long as it has a function as an acid diffusion controlling agent and does not correspond to the component (D1), and any known component can be used. Among them, aliphatic amines, especially secondary lipids An aliphatic amine or a tertiary aliphatic amine is preferred.

脂肪族胺係指,具有1個以上之脂肪族基的胺,該脂肪族基以碳數為1~12為佳。 The aliphatic amine refers to an amine having one or more aliphatic groups, and the aliphatic group preferably has a carbon number of from 1 to 12.

脂肪族胺,係指氨NH3的至少1個氫原子被碳數12以下之烷基或羥烷基所取代之胺(烷基胺或烷醇胺)或環式胺等例示。 The aliphatic amine means an amine (alkylamine or alkanolamine) or a cyclic amine in which at least one hydrogen atom of ammonia NH 3 is substituted with an alkyl group having 12 or less carbon atoms or a hydroxyalkyl group.

烷基胺及烷醇胺之具體例如,n-己基胺、n-庚基胺、n-辛基胺、n-壬基胺、n-癸基胺等單烷基胺;二乙酯胺、二-n-丙基胺、二-n-庚基胺、二-n-辛基胺、二環己基胺等二烷基胺;三甲基胺、三乙基胺、三-n-丙基胺、三-n-丁基胺、三-n-戊基胺、三-n-己基胺、三-n-庚基胺、三-n-辛基胺、三-n-壬基胺、三-n-癸基胺、三-n-十二烷基胺等三烷基胺;二乙醇胺、三乙醇胺、二異丙醇胺、三異丙醇胺、二-n-辛醇胺、三-n-辛醇胺等之烷醇胺等例示。該些之中,又以碳數5~10之三烷基胺為更佳,以三-n-戊基胺或三-n-辛基胺為特佳。 Specific examples of the alkylamine and the alkanolamine are, for example, a monoalkylamine such as n-hexylamine, n-heptylamine, n-octylamine, n-decylamine or n-decylamine; diethylamine amine, Dialkylamines such as bis-n-propylamine, di-n-heptylamine, di-n-octylamine, dicyclohexylamine; trimethylamine, triethylamine, tri-n-propyl Amine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, three a trialkylamine such as -n-decylamine or tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n-octanolamine, tri- An alkanolamine such as n-octanolamine or the like is exemplified. Among them, a trialkylamine having 5 to 10 carbon atoms is more preferable, and tri-n-pentylamine or tri-n-octylamine is particularly preferred.

環式胺,例如,含有作為雜原子之氮原子的雜環化合物等例示。該雜環化合物,可為單環式者(脂肪族單環式胺)亦可、多環式者(脂肪族多環式胺)亦可。 The cyclic amine is exemplified, for example, by a heterocyclic compound containing a nitrogen atom as a hetero atom. The heterocyclic compound may be a monocyclic one (aliphatic monocyclic amine) or a polycyclic one (aliphatic polycyclic amine).

脂肪族單環式胺,具體而言,例如,哌啶、哌等。 Aliphatic monocyclic amines, specifically, for example, piperidine, piperidine Wait.

脂肪族多環式胺,以碳數為6~10者為佳,具體而言,例如,1,5-二氮雜二環[4.3.0]-5-壬烯、1,8-二氮雜二環[5.4.0]-7-十一烯、伸六甲基四胺、1,4-二氮雜二環[2.2.2]辛烷等。 The aliphatic polycyclic amine is preferably a carbon number of 6 to 10, specifically, for example, 1,5-diazabicyclo[4.3.0]-5-nonene, 1,8-diaza Heterobicyclo[5.4.0]-7-undecene, hexamethyltetramine, 1,4-diazabicyclo[2.2.2]octane, and the like.

其他脂肪族胺,例如,三(2-甲氧基甲氧基乙基)胺、三{2-(2-甲氧基乙氧基)乙基}胺、三{2-(2-甲氧基乙氧基甲氧基)乙基}胺、三{2-(1-甲氧基乙氧基)乙基}胺、三{2-(1-乙氧基乙氧基)乙基}胺、三{2-(1-乙氧基丙氧基)乙基}胺、三[2-{2-(2-羥基乙氧基)乙氧基}乙基]胺、三乙醇胺三乙酸酯等,又以三乙醇胺三乙酸酯為佳。 Other aliphatic amines, for example, tris(2-methoxymethoxyethyl)amine, tris{2-(2-methoxyethoxy)ethyl}amine, tris{2-(2-methoxy Ethylethoxymethoxy)ethyl}amine, tris{2-(1-methoxyethoxy)ethyl}amine, tris{2-(1-ethoxyethoxy)ethyl}amine , tri{2-(1-ethoxypropoxy)ethyl}amine, tris[2-{2-(2-hydroxyethoxy)ethoxy}ethyl]amine, triethanolamine triacetate Etc., triethanolamine triacetate is preferred.

又,(D2)成份,亦可使用芳香族胺。 Further, as the component (D2), an aromatic amine can also be used.

芳香族胺,例如,苯胺、吡啶、4-二甲基胺基吡啶、吡咯、吲哚、吡唑、咪唑或該些之衍生物、二苯基胺、三苯基胺、三苄基胺、2,6-二異丙基苯胺、N-tert-丁氧基羰基吡咯啶等。 An aromatic amine, for example, aniline, pyridine, 4-dimethylaminopyridine, pyrrole, hydrazine, pyrazole, imidazole or derivatives thereof, diphenylamine, triphenylamine, tribenzylamine, 2,6-diisopropylaniline, N-tert-butoxycarbonylpyrrolidine, and the like.

(D2)成份,可單獨使用,或將2種以上組合使用亦可。 The component (D2) may be used singly or in combination of two or more.

(D2)成份,相對於(A)成份100質量份,通常為使用0.01~5.0質量份之範圍。於上述範圍時,可提高光阻圖型形狀、存放之經時安定性等。 The component (D2) is usually used in an amount of 0.01 to 5.0 parts by mass based on 100 parts by mass of the component (A). In the above range, the shape of the resist pattern, the stability over time of storage, and the like can be improved.

(D)成份,可單獨使用1種,或將2種以上組合使用亦可。 (D) The components may be used alone or in combination of two or more.

本發明之光阻組成物含有(D)成份之情形,(D)成份,相對於(A)成份100質量份,以0.1~15質量份為佳,以0.3~12質量份為較佳,以0.5~12質量份為更佳。於上述範圍之下限值以上時,作為光阻組成物之際,可使LWR等微影蝕刻特性更向上提升。又,可得到更良好的光阻圖型形狀。於前述範圍之上限值以下時,可維持良好 的感度,且具有優良之產率。 When the photoresist composition of the present invention contains the component (D), the component (D) is preferably 0.1 to 15 parts by mass, more preferably 0.3 to 12 parts by mass, based on 100 parts by mass of the component (A). 0.5 to 12 parts by mass is more preferable. When it is more than the lower limit of the above range, as a photoresist composition, the lithographic etching characteristics such as LWR can be further improved. Moreover, a more favorable photoresist pattern shape can be obtained. When it is below the upper limit of the above range, it can be maintained well. Sensitivity, and has excellent yield.

<酸產生劑成份;(B)成份> <acid generator component; (B) component>

本發明之光阻組成物,以含有經由曝光而產生酸之酸產生劑成份(B)(以下,亦稱為(B)成份)為佳。(B)成份,並未有特別之限定,其可使用目前為止被提案作為化學增強型光阻用之酸產生劑的成份。 The photoresist composition of the present invention preferably contains an acid generator component (B) (hereinafter, also referred to as a component (B)) which generates an acid by exposure. The component (B) is not particularly limited, and a component which has been proposed as an acid generator for chemically enhanced photoresist has been used.

該些酸產生劑,例如,錪鹽或鋶鹽等鎓鹽系酸產生劑、肟磺酸酯系酸產生劑、雙烷基或雙芳基磺醯基重氮甲烷類、聚(雙磺醯基)重氮甲烷類等重氮甲烷系酸產生劑、硝基苄基磺酸酯系酸產生劑、亞胺基磺酸酯系酸產生劑、二碸系酸產生劑等多種成份等例示。其中,又以使用鎓鹽系酸產生劑為佳。 The acid generators, for example, sulfonium acid generators such as sulfonium salts or sulfonium salts, hydrazine sulfonate acid generators, dialkyl or bisarylsulfonyldiazomethanes, poly(bissulfonate) Examples of various components such as a diazomethane acid generator such as diazomethane, a nitrobenzyl sulfonate acid generator, an imidosulfonate acid generator, and a diterpene acid generator are exemplified. Among them, it is preferred to use a hydrazine salt acid generator.

鎓鹽系酸產生劑,例如,可使用下述通式(b-1)所表示之化合物(以下,亦稱為「(b-1)成份」)、通式(b-2)所表示之化合物(以下,亦稱為「(b-2)成份」),或通式(b-3)所表示之化合物(以下,亦稱為「(b-3)成份」)。 The hydrazine salt-based acid generator can be, for example, a compound represented by the following formula (b-1) (hereinafter also referred to as "(b-1) component") or a formula (b-2). The compound (hereinafter also referred to as "(b-2) component)" or the compound represented by the formula (b-3) (hereinafter also referred to as "(b-3) component").

[式中,R101、R104~R108為各自獨立之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基。R104、R105,可相互鍵結形成環。R106~R107之任 意兩個,可相互鍵結形成環。R102為氟原子或碳數1~5之氟化烷基。Y101為單鍵或含有氧原子之2價之連結基。V101~V103為各自獨立之單鍵、伸烷基,或氟化伸烷基。L101~L102為各自獨立之單鍵或氧原子。L103~L105為各自獨立之單鍵、-CO-或-SO2-。M’m+為m價之有機陽離子(前述式(b1-1)之化合物中的陽離子除外)]。 [wherein R 101 and R 104 to R 108 are each a ring-form group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent. R 104 and R 105 may be bonded to each other to form a ring. Any two of R 106 to R 107 may be bonded to each other to form a ring. R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. Y 101 is a single bond or a divalent linking group containing an oxygen atom. V 101 to V 103 are each a single bond, an alkyl group, or a fluorinated alkyl group. L 101 ~ L 102 are each a single bond or an oxygen atom. L 103 ~ L 105 are each a separate single bond, -CO- or -SO 2 -. M' m+ is an m-valent organic cation (except for a cation in the compound of the above formula (b1-1)).

{陰離子部} {anion} .(b-1)成份之陰離子部 . (b-1) anion of the component

式(b-1)中,R101為,可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基。 In the formula (b-1), R 101 is a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent.

(可具有取代基之環式基) (cyclic group which may have a substituent)

前述環式基,以環狀烴基為佳,該環狀烴基,可為芳香族烴基亦可、脂肪族烴基亦可。 The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group.

R101中之芳香族烴基,例如由前述式(a1-1)之Va1中的2價之芳香族烴基所列舉之芳香族烴環,或由含有2個以上之芳香環的芳香族化合物去除1個氫原子所得之芳基等,又以苯基、萘基為佳。 The aromatic hydrocarbon group in R 101 is, for example, an aromatic hydrocarbon ring exemplified by a divalent aromatic hydrocarbon group in Va 1 of the above formula (a1-1), or an aromatic compound containing two or more aromatic rings. The aryl group or the like obtained by one hydrogen atom is preferably a phenyl group or a naphthyl group.

R101中之環狀脂肪族烴基,例如由前述式(a1-1)之Va1中之2價之脂肪族烴基所列舉之單環鏈烷或多環鏈烷去除1個氫原子所得之基等,又以金剛烷基、降莰基為佳。 The cyclic aliphatic hydrocarbon group in R 101 , for example, a group obtained by removing one hydrogen atom from a monocyclic alkane or a polycyclic alkane exemplified by a divalent aliphatic hydrocarbon group in Va 1 of the above formula (a1-1) Etc., it is better to use adamantyl and sulfhydryl groups.

又,R101中之環狀烴基,可如雜環般含有雜原子亦 可,具體而言,例如,上述通式(a2-r-1)~(a2-r-7)所分別表示之含內酯之環式基、上述通式(a5-r-1)~(a5-r-4)所分別表示之含-SO2-之環式基、其他例如以下所列舉之雜環式基等例示。 Further, the cyclic hydrocarbon group in R 101 may contain a hetero atom as in the case of a hetero ring, and specifically, for example, the above formula (a2-r-1) to (a2-r-7) a cyclic group of a lactone, a ring group containing -SO 2 - represented by the above formula (a5-r-1) to (a5-r-4), and other heterocyclic groups such as those exemplified below Illustrative.

R101之環狀烴基中之取代基,例如,烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基等。 The substituent in the cyclic hydrocarbon group of R 101 is, for example, an alkyl group, an alkoxy group, a halogen atom, an alkyl halide group, a hydroxyl group, a carbonyl group, a nitro group or the like.

作為取代基之烷基,以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。 The alkyl group as a substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為取代基之烷氧基,以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為最佳。 The alkoxy group as a substituent is preferably an alkoxy group having 1 to 5 carbon atoms, and a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, and a tert- group. The butoxy group is preferred, and the methoxy group and the ethoxy group are most preferred.

作為取代基之鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。 The halogen atom as a substituent, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom.

作為取代基之鹵化烷基,例如碳數1~5之烷基,例如甲基、乙基、丙基、n-丁基、tert-丁基等之氫原子的一部份或全部被前述鹵素原子所取代之基等例示。 The halogenated alkyl group as a substituent, for example, an alkyl group having 1 to 5 carbon atoms, such as a part or all of a hydrogen atom such as a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group, is partially halogenated. The base substituted by an atom is exemplified.

(可具有取代基之鏈狀烷基) (chain alkyl group which may have a substituent)

R101之鏈狀烷基,可為直鏈狀或支鏈狀之任一者皆可。 The chain alkyl group of R 101 may be either linear or branched.

直鏈狀烷基,以碳數為1~20為佳,以1~15為較佳,以1~10為最佳。具體而言,例如,甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。 The linear alkyl group preferably has a carbon number of from 1 to 20, preferably from 1 to 15, and most preferably from 1 to 10. Specifically, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, decyl, decyl, undecyl, dodecyl, tridecyl, Isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, twenty-one Alkyl, behenyl or the like.

支鏈狀烷基,以碳數為3~20為佳,以3~15為較佳,以3~10為最佳。具體而言,例如,1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。 The branched alkyl group preferably has a carbon number of 3 to 20, preferably 3 to 15, and preferably 3 to 10. Specifically, for example, 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1- Ethyl butyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, and the like.

(可具有取代基之鏈狀之烯基) (chain-like alkenyl group which may have a substituent)

R101之鏈狀烯基,可為直鏈狀或支鏈狀之任一者皆可,以碳數為2~10為佳,以2~5為較佳,以2~4為更佳,以3為特佳。直鏈狀之烯基,例如,乙烯基、丙烯基(烯丙基)、丁烯基等。支鏈狀之烯基,例如,1-甲基丙烯基、2-甲基丙烯基等。 The chain alkenyl group of R 101 may be either a linear chain or a branched chain, preferably having a carbon number of 2 to 10, preferably 2 to 5, and more preferably 2 to 4. It is especially good for 3. A linear alkenyl group, for example, a vinyl group, a propenyl group, a butenyl group or the like. A branched alkenyl group is, for example, a 1-methylpropenyl group, a 2-methylpropenyl group or the like.

鏈狀之烯基,於上述之中,特別是以丙烯基為佳。 The chain-like alkenyl group is preferably a propylene group among the above.

R101之鏈狀烷基或烯基中之取代基,例如,烷 氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基、胺基、上述R101中之環式基等。 The substituent in the chain alkyl group or alkenyl group of R 101 , for example, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amine group, a ring group in the above R 101 or the like.

其中,又以R101為,可具有取代基之環式基為佳,以可具有取代基之環狀烴基為較佳。更具體而言,以苯基、萘基、由多環鏈烷去除1個以上之氫原子所得之基、前述式(a2-r-1)~(a2-r-7)所分別表示之含內酯之環式基、上述通式(a5-r-1)~(a5-r-4)所分別表示之含-SO2-之環式基等為佳。 Among them, R 101 is preferably a cyclic group which may have a substituent, and a cyclic hydrocarbon group which may have a substituent is preferred. More specifically, a group obtained by removing one or more hydrogen atoms from a polyphenylene alkene by a phenyl group, a naphthyl group, or the above formula (a2-r-1) to (a2-r-7) The cyclic group of the lactone, the ring group containing -SO 2 - represented by the above formula (a5-r-1) to (a5-r-4), and the like are preferred.

式(b-1)中,Y101為單鍵或含有氧原子之2價之連結基。 In the formula (b-1), Y 101 is a single bond or a divalent linking group containing an oxygen atom.

Y101為含有氧原子之2價之連結基之情形,該Y101亦可含有氧原子以外的原子。氧原子以外的原子,例如碳原子、氫原子、硫原子、氮原子等。 Y 101 is a divalent linking group containing an oxygen atom, and Y 101 may contain an atom other than an oxygen atom. An atom other than an oxygen atom, such as a carbon atom, a hydrogen atom, a sulfur atom, a nitrogen atom or the like.

含有氧原子之2價之連結基,例如,氧原子(醚鍵結:-O-)、酯鍵結(-C(=O)-O-)、氧基羰基(-O-C(=O)-)、醯胺鍵結(-C(=O)-NH-)、羰基(-C(=O)-)、碳酸酯鍵結(-O-C(=O)-O-)等非烴系之含有氧原子的連結基;該非烴系之含有氧原子的連結基與伸烷基之組合等。該組合中,可再鍵結碸基(-SO2-)。該組合,例如下述式(y-al-1)~(y-al-7)所分別表示之連結基等例示。 a divalent linking group containing an oxygen atom, for example, an oxygen atom (ether bond: -O-), an ester bond (-C(=O)-O-), an oxycarbonyl group (-OC(=O)- ), a non-hydrocarbon-based compound such as a guanamine bond (-C(=O)-NH-), a carbonyl group (-C(=O)-), or a carbonate bond (-OC(=O)-O-) a linking group of an oxygen atom; a combination of a non-hydrocarbon-based linking group containing an oxygen atom and an alkylene group; and the like. In this combination, a sulfhydryl group (-SO 2 -) can be bonded. The combination is exemplified by, for example, a linking group represented by the following formulas (y-al-1) to (y-al-7).

[式中,V’101為單鍵或碳數1~5之伸烷基,V’102為碳數1~30之2價之飽和烴基]。 [wherein, V' 101 is a single bond or an alkylene group having 1 to 5 carbon atoms, and V' 102 is a divalent saturated hydrocarbon group having 1 to 30 carbon atoms].

V’102中之2價之飽和烴基,以碳數1~30之伸烷基為佳。 The divalent saturated hydrocarbon group in V' 102 is preferably an alkylene group having 1 to 30 carbon atoms.

V’101及V’102中之伸烷基,可為直鏈狀之伸烷基亦可、支鏈狀之伸烷基亦可,又以直鏈狀之伸烷基為佳。 The alkylene group in V' 101 and V' 102 may be a linear alkyl group or a branched alkyl group, and a linear alkyl group is preferred.

V’101及V’102中之伸烷基,具體而言,例如,伸甲基[-CH2-];-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基伸甲基;伸乙基[-CH2CH2-];-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-等之烷基伸乙基;伸三甲基(n-伸丙基)[-CH2CH2CH2-];-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基伸三甲基;伸四甲基[-CH2CH2CH2CH2-];-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基伸四甲基;伸五甲基 [-CH2CH2CH2CH2CH2-]等。 The alkylene group in V' 101 and V' 102 , specifically, for example, methyl [-CH 2 -]; -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C ( Alkyl extension of CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 -, etc. Methyl; exoethyl [-CH 2 CH 2 -]; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, - The alkyl group of CH(CH 2 CH 3 )CH 2 -etc. is an ethyl group; the trimethyl (n-propyl)[-CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 -etc. The alkyl group extends to a trimethyl group; tetramethyl [-CH 2 CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 CH 2 -, The alkyl group of -CH 2 CH(CH 3 )CH 2 CH 2 - or the like is tetramethyl; the pentamethyl group [-CH 2 CH 2 CH 2 CH 2 CH 2 -] or the like.

又,V’101或V’102中,前述伸烷基中的一部份之伸甲基,可被碳數5~10之2價之脂肪族環式基所取代。該脂肪族環式基,以由前述式(a1-r-1)中之Ra’3之環狀脂肪族烴基再去除1個氫原子所得之2價之基為佳,環己基、1,5-伸金剛烷基或2,6-伸金剛烷基為較佳。 Further, in V' 101 or V' 102 , a methyl group of a part of the alkylene group may be substituted by a divalent aliphatic ring group having 5 to 10 carbon atoms. The aliphatic cyclic group is preferably a divalent group obtained by further removing one hydrogen atom from the cyclic aliphatic hydrocarbon group of Ra' 3 in the above formula (a1-r-1), cyclohexyl group, 1, 5 - Ardenyl or 2,6-adamantyl is preferred.

Y101,以含有酯鍵結或醚鍵結之2價之連結基為佳,以上述式(y-al-1)~(y-al-5)所分別表示之連結基為佳。 Y 101 is preferably a divalent linking group containing an ester bond or an ether bond, and a linking group represented by the above formula (y-al-1) to (y-al-5) is preferred.

式(b-1)中,V101為單鍵、伸烷基,或氟化伸烷基。V101中之伸烷基、氟化伸烷基,以碳數1~4為佳。V101中之氟化伸烷基,例如,V101中,伸烷基中的一部份或全部氫原子被氟原子所取代之基等例示。其中,又以V101為單鍵,或碳數1~4之氟化伸烷基為佳。 In the formula (b-1), V 101 is a single bond, an alkylene group, or a fluorinated alkyl group. The alkyl group and the fluorinated alkyl group in V 101 are preferably a carbon number of 1 to 4. V 101 in the fluorinated alkylene, e.g., V 101, the extension illustrated in the alkyl part or all of the hydrogen atoms are substituted by fluorine atom and the like. Among them, V 101 is a single bond, or a fluorinated alkyl group having 1 to 4 carbon atoms is preferred.

式(b-1)中,R102為氟原子或碳數1~5之氟化烷基。R102,以氟原子或碳數1~5之全氟烷基為佳,以氟原子為較佳。 In the formula (b-1), R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. R 102 is preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbon atoms, and preferably a fluorine atom.

(b-1)成份之陰離子部的具體例,例如, (b-1) Specific examples of the anion portion of the component, for example,

Y101為單鍵之情形,例如,三氟甲烷磺酸酯陰離子或全氟丁烷磺酸酯陰離子等氟化烷基磺酸酯陰離子等;Y101為含有氧原子之2價之連結基之情形,可例如下述式(an-1)~(an-3)之任一者所表示之陰離子等例示。 Y 101 is a single bond, for example, a fluorinated alkyl sulfonate anion such as a trifluoromethanesulfonate anion or a perfluorobutanesulfonate anion; and Y 101 is a divalent linking group containing an oxygen atom. In the case, for example, an anion represented by any one of the following formulas (an-1) to (an-3) can be exemplified.

[式中,R”101為,可具有取代基之脂肪族環式基、前述式(r-hr-1)~(r-hr-6)所分別表示之基,或可具有取代基之鏈狀烷基;R”102為,可具有取代基之脂肪族環式基、前述式(a2-r-1)~(a2-r-7)所分別表示之含內酯之環式基,或前述通式(a5-r-1)~(a5-r-4)所分別表示之含-SO2-之環式基;R”103為,可具有取代基之芳香族環式基、可具有取代基之脂肪族環式基,或可具有取代基之鏈狀之烯基;V”101為氟化伸烷基;L”101為-C(=O)-或-SO2-;v”為各自獨立之0~3之整數,q”為各自獨立之1~20之整數,n”為0或1]。 [wherein R" 101 is an aliphatic cyclic group which may have a substituent, a group represented by the above formula (r-hr-1) to (r-hr-6), or a chain which may have a substituent An alkyl group; R" 102 is an aliphatic cyclic group which may have a substituent, a lactone-containing ring group represented by the above formula (a2-r-1) to (a2-r-7), or The ring-form group containing -SO 2 - represented by the above formula (a5-r-1) to (a5-r-4); R" 103 is an aromatic ring group which may have a substituent, and may have An aliphatic cyclic group of a substituent, or a chain-like alkenyl group which may have a substituent; V" 101 is a fluorinated alkyl group; L" 101 is -C(=O)- or -SO 2 -;v" For each of the independent integers of 0~3, q" is an integer of 1~20, and n" is 0 or 1].

R”101、R”102及R”103之可具有取代基之脂肪族環式基,以前述R101中之環狀脂肪族烴基所例示之基為佳。前述取代基,例如與可取代R101中之環狀脂肪族烴基之取代基為相同之內容。 An aliphatic cyclic group which may have a substituent of R" 101 , R" 102 and R" 103 , preferably a group exemplified by the above-mentioned cyclic aliphatic hydrocarbon group in R 101. The aforementioned substituent, for example, and a substitutable R The substituent of the cyclic aliphatic hydrocarbon group in 101 is the same.

R”103中之可具有取代基之芳香族環式基,以前述R101中之環狀烴基中之芳香族烴基所例示之基為佳。 前述取代基,例如與可取代R101中之該芳香族烴基之取代基為相同之內容。 The aromatic cyclic group which may have a substituent in R" 103 is preferably the group exemplified as the aromatic hydrocarbon group in the cyclic hydrocarbon group in the above R 101. The aforementioned substituent, for example, and the substitutable R 101 The substituent of the aromatic hydrocarbon group is the same.

R”101中之可具有取代基之鏈狀烷基,以前述R101中之鏈狀烷基所例示之基為佳。R”103中之可具有取代基之鏈狀之烯基,以前述R101中之鏈狀之烯基所例示之基為佳。V”101,較佳為碳數1~3之氟化伸烷基,特佳為-CF2-、-CF2CF2-、-CHFCF2-、-CF(CF3)CF2-、-CH(CF3)CF2-。 a chain alkyl group which may have a substituent in R" 101 , preferably a group exemplified by the above-mentioned chain alkyl group in R 101. A chain-like alkenyl group which may have a substituent in R" 103 , The group exemplified by the chain-like alkenyl group in R 101 is preferred. V" 101 , preferably a fluorinated alkyl group having 1 to 3 carbon atoms, particularly preferably -CF 2 -, -CF 2 CF 2 -, -CHFCF 2 -, -CF(CF 3 )CF 2 -, CH(CF 3 )CF 2 -.

.(b-2)成份之陰離子部 . (b-2) anion of the component

式(b-2)中,R104、R105為各自獨立之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,其分別與式(b-1)中之R101為相同之內容。其中,R104、R105,可相互鍵結形成環。 In the formula (b-2), R 104 and R 105 are each independently a ring group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, respectively It is the same as R 101 in the formula (b-1). Wherein R 104 and R 105 may be bonded to each other to form a ring.

R104、R105,以可具有取代基之鏈狀烷基為佳,以直鏈狀或支鏈狀烷基,或直鏈狀或支鏈狀之氟化烷基為較佳。 R 104 and R 105 are preferably a chain alkyl group which may have a substituent, and a linear or branched alkyl group or a linear or branched fluorinated alkyl group is preferred.

該鏈狀烷基之碳數以1~10為佳,較佳為碳數1~7,更佳為碳數1~3。R104、R105之鏈狀烷基的碳數,於上述碳數之範圍內時,就對於光阻溶劑亦具有良好之溶解性等理由,以越小越好。又,R104、R105之鏈狀烷基中,被氟原子所取代之氫原子數目越多時,以酸之強度更強,且,對於200nm以下之高能量光或電子線,可提高透明性等觀點而為更佳。前述鏈狀烷基中氟原子之比例,即氟化率,較佳為70~100%,更佳為90~100%,最佳為全部 氫原子被氟原子所取代之全氟烷基。 The chain alkyl group preferably has 1 to 10 carbon atoms, preferably 1 to 7 carbon atoms, more preferably 1 to 3 carbon atoms. When the carbon number of the chain alkyl group of R 104 or R 105 is in the range of the above carbon number, the solubility in the resist solvent is also good, and the smaller the better. Further, in the chain alkyl group of R 104 or R 105 , the more the number of hydrogen atoms substituted by the fluorine atom, the stronger the strength of the acid, and the higher the energy or the electron beam of 200 nm or less, the transparency can be improved. Sex and other viewpoints are better. The proportion of the fluorine atom in the chain alkyl group, that is, the fluorination ratio is preferably from 70 to 100%, more preferably from 90 to 100%, and most preferably a perfluoroalkyl group in which all hydrogen atoms are replaced by fluorine atoms.

式(b-2)中,V102、V103,各自獨立為單鍵、伸烷基,或氟化伸烷基,其分別與式(b-1)中之V101為相同之內容。 In the formula (b-2), V 102 and V 103 are each independently a single bond, an alkylene group, or a fluorinated alkyl group, which are respectively the same as V 101 in the formula (b-1).

式(b-2)中,L101~L102,各自獨立為單鍵或氧原子。 In the formula (b-2), L 101 to L 102 are each independently a single bond or an oxygen atom.

.(b-3)成份之陰離子部 . (b-3) anion of the component

式(b-3)中,R106~R108為各自獨立之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,其分別與式(b-1)中之R101為相同之內容。 In the formula (b-3), R 106 to R 108 are each independently a ring group which may have a substituent, a chain alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, respectively It is the same as R 101 in the formula (b-1).

L103~L105為各自獨立之單鍵、-CO-或-SO2-。 L 103 ~ L 105 are each a separate single bond, -CO- or -SO 2 -.

{陽離子部} {cation part}

式(b-1)、(b-2)及(b-3)中,M’m+為前述式(b1-1)的化合物中之陽離子以外的m價之有機陽離子,其中又以鋶陽離子或錪陽離子為佳,以下述通式(ca-1)~(ca-4)所分別表示之陽離子為特佳。 In the formulae (b-1), (b-2) and (b-3), M' m+ is an m-valent organic cation other than the cation in the compound of the above formula (b1-1), wherein a phosphonium cation or The phosphonium cation is preferred, and the cations represented by the following general formulae (ca-1) to (ca-4) are particularly preferred.

[式中,R201~R207,及R211~R212,各自獨立表示可具有 取代基之芳基、烷基或烯基,R201~R203、R206~R207、R211~R212,可相互鍵結並與式中之硫原子共同形成環亦可。R208~R209各自獨立表示氫原子或碳數1~5之烷基,R210為可具有取代基之芳基、烷基、烯基,或含-SO2-之環式基,L201表示-C(=O)-或-C(=O)-O-,Y201表示各自獨立之伸芳基、伸烷基或伸烯基,x為1或2,W201表示(x+1)價之連結基]。 Wherein R 201 to R 207 and R 211 to R 212 each independently represent an aryl group, an alkyl group or an alkenyl group which may have a substituent, R 201 to R 203 , R 206 to R 207 , and R 211 to R 212 , may be bonded to each other and form a ring together with the sulfur atom in the formula. R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R 210 is an aryl group, an alkyl group, an alkenyl group or a ring group containing -SO 2 -, which may have a substituent, L 201 Represents -C(=O)- or -C(=O)-O-, Y 201 represents an independently extended aryl, alkyl or alkenyl group, x is 1 or 2, and W 201 represents (x+1) ) The link of the price].

R201~R207,及R211~R212中之芳基,例如,碳數6~20之無取代之芳基等,又以苯基、萘基為佳。 R 201 to R 207 , and an aryl group in R 211 to R 212 , for example, an unsubstituted aryl group having 6 to 20 carbon atoms, preferably a phenyl group or a naphthyl group.

R201~R207,及R211~R212中之烷基,以鏈狀或環狀烷基,且為碳數1~30者為佳。 The alkyl group in R 201 to R 207 and R 211 to R 212 is preferably a chain or a cyclic alkyl group, and preferably has a carbon number of from 1 to 30.

R201~R207,及R211~R212中之烯基,以碳數為2~10為佳。 The alkenyl group in R 201 to R 207 and R 211 to R 212 preferably has a carbon number of 2 to 10.

R201~R207,及R210~R212所可具有之取代基’例如,烷基、鹵素原子、鹵化烷基、羰基、氰基、胺基、芳基、芳硫基、下述式(ca-r-1)~(ca-r-7)所分別表示之基等例示。 R 201 to R 207 , and a substituent which the R 210 to R 212 may have, for example, an alkyl group, a halogen atom, an alkyl halide group, a carbonyl group, a cyano group, an amine group, an aryl group, an arylthio group, and the following formula ( The bases represented by ca-r-1)~(ca-r-7) are exemplified.

作為取代基的芳硫基中之芳基,例如與R101所列舉者為相同之內容,具體而言,例如苯硫基或聯苯硫基等例示。 The aryl group in the arylthio group as the substituent is, for example, the same as those enumerated in R 101 , and specifically, for example, a phenylthio group or a biphenylthio group is exemplified.

[式中,R’201為各自獨立之氫原子、可具有取代基之環式基、鏈狀烷基,或鏈狀之烯基]。 [wherein, R'201 is a respective independently hydrogen atom, a ring group which may have a substituent, a chain alkyl group, or a chain-like alkenyl group].

R’201之可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基,除與上述式(b-1)中之R101為相同之內容以外,其他例如與可具有取代基之環式基或可具有取代基之鏈狀烷基之上述式(a1-r-2)所表示之酸解離性基為相同之內容等。 R '201 may be the group having a cyclic substituent, the alkyl chain may have a substituent group, the alkenyl group may have a substituent, or a chain of the group, in addition to the above-described formula (b-1) is the same as the R 101 Other than the above, other acid dissociable groups represented by the above formula (a1 - r-2) which are a cyclic group which may have a substituent or a chain alkyl group which may have a substituent may be the same.

R201~R203、R206~R207、R211~R212,為相互鍵結並與式中之硫原子共同形成環之情形,其可介有硫原子、氧原子、氮原子等雜原子,或羰基、-SO-、-SO2-、-SO3-、-COO-、-CONH-或-N(RN)-(該RN為碳數1~5之烷基)等官能基而鍵結。所形成之環,例如,式中之硫原子為包含於該環骨架所形成之1個之環,包含硫原子,以3~10員環為佳,以5~7員環為特佳。所形成之環的具體例如,例如噻吩環、噻唑環、苯併噻吩環、噻蒽(Thianthrene)環、苯併噻吩環、二苯併噻吩環、9H-硫(Thioxanthene)環、氧硫(Thioxanthone)環、噻蒽環、啡噁噻(Phenoxathiine)環、四氫噻吩鎓(Tetrahydrothiophenium)環、四氫硫代吡喃鎓(Tetrahydrothiopyranium)環等。 R 201 to R 203 , R 206 to R 207 , and R 211 to R 212 are bonded to each other and form a ring together with a sulfur atom in the formula, and may contain a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom. Or a functional group such as a carbonyl group, -SO-, -SO 2 -, -SO 3 -, -COO-, -CONH- or -N(R N )- (the R N is an alkyl group having 1 to 5 carbon atoms) And the key knot. The ring formed, for example, the sulfur atom in the formula is one ring formed by the ring skeleton, and contains a sulfur atom, preferably 3 to 10 membered rings, and particularly preferably 5 to 7 membered rings. Specific examples of the ring formed include, for example, a thiophene ring, a thiazole ring, a benzothiophene ring, a Thienthrene ring, a benzothiophene ring, a dibenzothiophene ring, and a 9H-sulfur (Thioxanthene) ring, oxygen sulfur (Thioxanthone) ring, thioxan ring, Phenoxathiine ring, Tetrahydrothiophenium ring, Tetrahydrothiopyranium ring and the like.

R208~R209表示各自獨立之氫原子或碳數1~5之烷基,又以氫原子或碳數1~3之烷基為佳,形成烷基之情形,其可相互鍵結形成環。 R 208 R R 209 represents a hydrogen atom independently or an alkyl group having 1 to 5 carbon atoms, and preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms to form an alkyl group, which may be bonded to each other to form a ring. .

R210為,可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基,或可具有取代基之含-SO2-之環式基。 R 210 is an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a ring group containing -SO 2 - which may have a substituent.

R210中之芳基,例如,碳數6~20之無取代之芳基等,又以苯基、萘基為佳。 The aryl group in R 210 , for example, an unsubstituted aryl group having 6 to 20 carbon atoms, is preferably a phenyl group or a naphthyl group.

R210中之烷基,以鏈狀或環狀烷基,且為碳數1~30者為佳。 The alkyl group in R 210 is preferably a chain or a cyclic alkyl group and has a carbon number of from 1 to 30.

R210中之烯基,以碳數為2~10為佳。 The alkenyl group in R 210 preferably has a carbon number of 2 to 10.

R210中,可具有取代基之含-SO2-之環式基,例如與上述通式(a2-1)中之Ra21之「含-SO2-之環式基」為相同之內容等,又以上述通式(a5-r-1)所表示之基為佳。 In R 210 , a ring-form group containing -SO 2 - which may have a substituent, for example, the same as "the ring group containing -SO 2 -" of Ra 21 in the above formula (a2-1) Further, it is preferably a group represented by the above formula (a5-r-1).

Y201表示各自獨立之伸芳基、伸烷基或伸烯基。 Y 201 represents an independently extended aryl group, an alkyl group or an alkenyl group.

Y201中之伸芳基,例如由上述式(b-1)中之R101中作為芳香族烴基所例示之芳基去除1個氫原子所得之基等例示。 The aryl group in Y 201 is exemplified by, for example, a group obtained by removing one hydrogen atom from the aryl group exemplified as the aromatic hydrocarbon group in R 101 in the above formula (b-1).

Y201中之伸烷基、伸烯基,例如與上述通式(a1-1)中之Va1中之作為2價之烴基的脂肪族烴基為相同之內容。 The alkylene group and the alkenyl group in Y 201 are the same as those of the aliphatic hydrocarbon group which is a divalent hydrocarbon group in Va 1 in the above formula (a1-1).

前述式(ca-4)中,x為1或2。 In the above formula (ca-4), x is 1 or 2.

W201為(x+1)價,即2價或3價之連結基。 W 201 is a (x+1) valence, that is, a divalent or trivalent linking group.

W201中之2價之連結基,以可具有取代基之2價之烴基為佳,其可例如與前述通式(a2-1)中之Ya21為相同之烴基。W201中之2價之連結基,可為直鏈狀、支鏈狀、環狀之任一者,又以環狀為佳。其中,又以伸芳基之兩端組合2個羰基所得之基為佳。伸芳基,可例如,伸苯基、伸萘基等,又以伸苯基為特佳。 The divalent linking group in W 201 is preferably a divalent hydrocarbon group which may have a substituent, and may be, for example, the same hydrocarbon group as Ya 21 in the above formula (a2-1). The two-valent linking group in W 201 may be any of a linear chain, a branched chain, and a cyclic ring, and is preferably a ring. Among them, it is preferred to combine the two carbonyl groups at both ends of the aryl group. The aryl group can be, for example, a phenyl group, a naphthyl group or the like, and a phenyl group is particularly preferred.

W201中之3價之連結基,例如由前述W201中之2價之連結基去除1個氫原子所得之基、前述2價之連結基再鍵結前述2價之連結基所得之基等。W201中之3價之連結基,又以伸芳基鍵結2個羰基所得之基為佳。 The linking group of the trivalent value in W 201 is, for example, a group obtained by removing one hydrogen atom from the linking group of two valences in W 201 , and a group obtained by bonding the above-mentioned divalent linking group to the above-mentioned divalent linking group. . The trivalent linking group in W 201 is preferably a group obtained by bonding an aryl group to two carbonyl groups.

式(ca-1)所表示之較佳的陽離子,具體而言,例如,下述式(ca-1-1)~(ca-1-63)所分別表示之陽離子等例示。 Specific examples of the cation represented by the formula (ca-1), for example, cations and the like represented by the following formulas (ca-1-1) to (ca-1-63) are exemplified.

[式中,g1、g2、g3表示重複之數目,g1為1~5之整數,g2為0~20之整數,g3為0~20之整數]。 [wherein, g1, g2, and g3 represent the number of repetitions, g1 is an integer of 1 to 5, g2 is an integer of 0 to 20, and g3 is an integer of 0 to 20].

[式中,R”201為氫原子或取代基,取代基例如與前述R201~R207,及R210~R212所可具有之取代基為相同之內容等]。 [In the formula, R" 201 is a hydrogen atom or a substituent, and the substituent is, for example, the same as the substituents which the above R 201 to R 207 and R 210 to R 212 may have.

前述式(ca-3)所表示之較佳的陽離子,具體而言,例如,下述式(ca-3-1)~(ca-3-6)所分別表示之陽離子等例示。 Specific examples of the cations represented by the above formula (ca-3), for example, cations and the like represented by the following formulas (ca-3-1) to (ca-3-6) are exemplified.

前述式(ca-4)所表示之較佳的陽離子,具體而言,例如,下述式(ca-4-1)~(ca-4-2)所分別表示之陽離子等例示。 Specific examples of the cations represented by the above formula (ca-4), for example, cations and the like represented by the following formulas (ca-4-1) to (ca-4-2) are exemplified.

又,本發明之光阻組成物,以含有含下述通式(b1-1)所表示之化合物的酸產生劑(B1)者為佳。 Further, the photoresist composition of the present invention is preferably an acid generator (B1) containing a compound represented by the following formula (b1-1).

[式中,R1、R2為可具有取代基之碳數1~10之烷基,R3、R4為可具有取代基之碳數2~10之烷基,R3與R4,可與其所鍵結之硫原子共同形成環,X-為對陰離子]。 [wherein, R 1 and R 2 are an alkyl group having 1 to 10 carbon atoms which may have a substituent, and R 3 and R 4 are an alkyl group having 2 to 10 carbon atoms which may have a substituent, and R 3 and R 4 , It may form a ring together with the sulfur atom to which it is bonded, and X - is a pair of anions].

式(b1-1)中,R1、R2、R3及R4之說明,係與前述通式(d0)中之R1、R2、R3及R4之說明為相同之內容。 In Formula (b1-1), R 1, R 2, R 34 and R described, the system and the aforementioned general formula (D0) in the R 1, R 2, R 34 and R of the same description of the content.

前述通式(b1-1)中,X-為對陰離子。 In the above formula (b1-1), X - is a counter anion.

通式(b1-1)中之X-之對陰離子,例如,磺酸陰離子、羧酸陰離子、醯亞胺陰離子、甲基金屬陰離子、碳陰離子、硼酸鹽陰離子、鹵素陰離子、磷酸陰離子、銻酸陰離子、砷酸陰離子等陰離子等例示。 General formula (b1-1) in the X - anion of, e.g., sulfonic acid anion, a carboxylate anion, acyl imide anion, a methyl metal anion, carbanion, borate anion, halogen anion, phosphate anion, antimonate Examples of anions such as anions and arsenic anions are exemplified.

例如,下述通式(b-an1)所表示之陰離子,或與前述通式(b-1)~(b-3)中所列舉之陰離子部為相同之陰離子部等 例示。 For example, an anion represented by the following formula (b-an1) or an anion moiety similar to the anion moiety listed in the above formulae (b-1) to (b-3) Illustrative.

[式中,R11~R14為各自獨立之氟原子、可具有取代基之烷基,或芳基]。 [wherein, R 11 to R 14 are each independently a fluorine atom, an alkyl group which may have a substituent, or an aryl group].

上述通式(b-an1)中,R11~R14中之烷基,以碳數1~20之烷基為佳,例如與前述式(a1-r-1)之Ra’3為相同之鏈狀或環狀烷基等。 In the above formula (b-an1), the alkyl group in R 11 to R 14 is preferably an alkyl group having 1 to 20 carbon atoms, for example, the same as Ra' 3 of the above formula (a1-r-1). Chain or cyclic alkyl groups, etc.

R11~R14中之芳基,以苯基或萘基為佳。 The aryl group in R 11 to R 14 is preferably a phenyl group or a naphthyl group.

R11~R14為烷基或芳基之情形,所可具有之取代基,例如,鹵素原子、鹵化烷基、烷基、烷氧基、烷硫基、羥基、羰基等。該些取代基之例,可例如通式(a2-r-1)~(a2-r-7)所表示之基等。又,烷硫基,例如碳數1~4者。其中又以鹵素原子、鹵化烷基、烷基、烷氧基、烷硫基為佳。 When R 11 to R 14 are an alkyl group or an aryl group, they may have a substituent such as a halogen atom, an alkyl halide group, an alkyl group, an alkoxy group, an alkylthio group, a hydroxyl group, a carbonyl group or the like. Examples of the substituents may be, for example, a group represented by the formula (a2-r-1) to (a2-r-7). Further, the alkylthio group is, for example, a carbon number of 1 to 4. Among them, a halogen atom, an alkyl halide, an alkyl group, an alkoxy group or an alkylthio group is preferred.

上述通式(b-an1)中,R11~R14較佳以氟原子、氟化烷基,或下述通式(b-an1’)所表示之基為佳。 In the above formula (b-an1), R 11 to R 14 are preferably a fluorine atom, a fluorinated alkyl group or a group represented by the following formula (b-an1').

[式中,R’11~R’15各自獨立為氫原子、氟原子、三氟甲基、碳數1~4之烷基、烷氧基或烷硫基]。 [wherein, R' 11 to R' 15 are each independently a hydrogen atom, a fluorine atom, a trifluoromethyl group, an alkyl group having 1 to 4 carbon atoms, an alkoxy group or an alkylthio group].

前述通式(b-an1’)中,碳數1~4之烷基,具體而言,例如,甲基、乙基、n-丙基、n-丁基等。該些之中,以甲基、乙基或n-丁基為佳,以甲基或乙基為更佳。 In the above formula (b-an1'), the alkyl group having 1 to 4 carbon atoms is specifically, for example, a methyl group, an ethyl group, an n-propyl group or an n-butyl group. Among these, a methyl group, an ethyl group or an n-butyl group is preferred, and a methyl group or an ethyl group is more preferred.

前述通式(b-an1’)中,碳數1~4之烷氧基,具體而言,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為較佳,以甲氧基、乙氧基為更佳。 In the above formula (b-an1'), an alkoxy group having 1 to 4 carbon atoms, specifically, a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, and an n-butoxy group. The base and tert-butoxy group are preferred, and the methoxy group and the ethoxy group are more preferred.

前述通式(b-an1’)中,碳數1~4之烷硫基,以甲硫基、乙硫基、n-丙硫基、iso-丙硫基、n-丁硫基、tert-丁硫基為佳,以甲硫基、乙硫基為較佳。 In the above formula (b-an1'), the alkylthio group having 1 to 4 carbon atoms is a methylthio group, an ethylthio group, an n-propylthio group, an iso-propylthio group, an n-butylthio group, a tert- The butylthio group is preferred, and the methylthio group and the ethylthio group are preferred.

上述通式(b-an1)所表示之陰離子部之較佳具體例,例如,四(五氟苯基)硼酸鹽陰離子([B(C6F5)4]-)、四[(三氟甲基)苯基]硼酸鹽陰離子([B(C6H4CF3)4]-)、二氟基雙(五氟苯基)硼酸鹽陰離子([(C6F5)2BF2]-)、三氟(五氟苯基)硼酸鹽陰離子([(C6F5)BF3]-)、四(二氟苯基)硼酸鹽陰離子([B(C6H3F2)4]-)等。該些之中,又以四(五氟苯基)硼酸鹽陰離子([B(C6F5)4]-)為特佳。 Preferred specific examples of the anion moiety represented by the above formula (b-an1) are, for example, tetrakis(pentafluorophenyl)borate anion ([B(C 6 F 5 ) 4 ] - ), tetra [(trifluoro Methyl)phenyl]borate anion ([B(C 6 H 4 CF 3 ) 4 ] - ), difluoro bis(pentafluorophenyl) borate anion ([(C 6 F 5 ) 2 BF 2 ] - ), trifluoro(pentafluorophenyl)borate anion ([(C 6 F 5 )BF 3 ] - ), tetrakis(difluorophenyl) borate anion ([B(C 6 H 3 F 2 ) 4 ] - ) and so on. Among them, tetrakis(pentafluorophenyl)borate anion ([B(C 6 F 5 ) 4 ] - ) is particularly preferred.

X-之對陰離子可為鹵素陰離子、磷酸陰離子、銻酸陰離子(SbF6 -)、砷酸陰離子(AsF6 -)。鹵素陰離子,可例如氯或溴等,磷酸陰離子,例如,PF6 -或下述通式(b-an2)所表示之陰離子等。 The anion of X - may be a halogen anion, a phosphate anion, a phthalic acid anion (SbF 6 - ), or an arsenate anion (AsF 6 - ). The halogen anion may be, for example, chlorine or bromine, a phosphate anion, for example, PF 6 - or an anion represented by the following formula (b-an2).

[式中,R15為各自獨立之碳數1~8之氟化烷基。q為1~6]。 [wherein, R 15 is a fluorinated alkyl group having 1 to 8 carbon atoms each independently. q is 1~6].

前述通式(b-an2)中,碳數1~8之氟化烷基的具體例如,CF3、CF3CF2、(CF3)2CF、CF3CF2CF2、CF3CF2CF2CF2、(CF3)2CFCF2、CF3CF2(CF3)CF、C(CF3)3等例示。 In the above formula (b-an2), specific examples of the fluorinated alkyl group having 1 to 8 carbon atoms include CF 3 , CF 3 CF 2 , (CF 3 ) 2 CF, CF 3 CF 2 CF 2 , and CF 3 CF 2 . CF 2 CF 2 , (CF 3 ) 2 CFCF 2 , CF 3 CF 2 (CF 3 ) CF, C(CF 3 ) 3 and the like are exemplified.

酸產生劑(B1),可單獨使用,或將2種以上組合使用亦可。酸產生劑(B1)之含量,相對於本發明之光阻組成物的全質量,以0.1~10質量%者為佳,以0.5~5質量%者為較佳,以0.5~3質量%者為更佳。 The acid generator (B1) may be used alone or in combination of two or more. The content of the acid generator (B1) is preferably 0.1 to 10% by mass, preferably 0.5 to 5% by mass, and 0.5 to 3% by mass based on the total mass of the photoresist composition of the present invention. For better.

酸產生劑(B),可併用上述以外的其他酸產生劑。 As the acid generator (B), other acid generators other than the above may be used in combination.

其他酸產生劑中之第一態樣,例如,2,4-雙(三氯甲基)-6-向日葵基(Piperonyl)-1,3,5-三、2,4-雙(三氯甲基)-6-[2-(2-呋喃基)乙烯基(ethenyl)]-s-三、2,4-雙(三氯甲基)-6-[2-(5-甲基-2-呋喃基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(5-乙基-2-呋喃基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(5-丙基-2-呋喃基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(3,5-二甲氧基苯基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(3,5-二乙氧基苯基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(3,5-二丙氧基苯基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(3-甲氧基-5-乙氧基苯 基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(3-甲氧基-5-丙氧基苯基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-[2-(3,4-伸甲基二氧基苯基)乙烯基]-s-三、2,4-雙(三氯甲基)-6-(3,4-伸甲基二氧基苯基)-s-三、2,4-雙-三氯甲基-6-(3-溴基-4-甲氧基)苯基-s-三、2,4-雙-三氯甲基-6-(2-溴基-4-甲氧基)苯基-s-三、2,4-雙-三氯甲基-6-(2-溴基-4-甲氧基)苯乙烯基苯基-s-三、2,4-雙-三氯甲基-6-(3-溴基-4-甲氧基)苯乙烯基苯基-s-三、2-(4-甲氧基苯基)-4,6-雙(三氯甲基)-1,3,5-三、2-(4-甲氧基萘基)-4,6-雙(三氯甲基)-1,3,5-三、2-[2-(2-呋喃基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三、2-[2-(5-甲基-2-呋喃基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三、2-[2-(3,5-二甲氧基苯基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三、2-[2-(3,4-二甲氧基苯基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三、2-(3,4-伸甲基二氧基苯基)-4,6-雙(三氯甲基)-1,3,5-三、三(1,3-二溴基丙基)-1,3,5-三、三(2,3-二溴基丙基)-1,3,5-三等之含鹵素的三化合物、與三(2,3-二溴基丙基)異三聚氰酸酯等下述通式(b3)所表示之含有鹵素之三化合物等例示。 The first aspect of other acid generators, for example, 2,4-bis(trichloromethyl)-6-flower base (Piperonyl)-1,3,5-three , 2,4-bis(trichloromethyl)-6-[2-(2-furyl)ethenyl-s-three , 2,4-bis(trichloromethyl)-6-[2-(5-methyl-2-furyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(5-ethyl-2-furyl)vinyl]-s-three 2,4-bis(trichloromethyl)-6-[2-(5-propyl-2-furyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(3,5-dimethoxyphenyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(3,5-diethoxyphenyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(3,5-dipropoxyphenyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(3-methoxy-5-ethoxyphenyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(3-methoxy-5-propoxyphenyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-[2-(3,4-extended methyldioxyphenyl)vinyl]-s-three , 2,4-bis(trichloromethyl)-6-(3,4-extended methyldioxyphenyl)-s-three 2,4-bis-trichloromethyl-6-(3-bromo-4-methoxy)phenyl-s-three 2,4-bis-trichloromethyl-6-(2-bromo-4-methoxy)phenyl-s-three 2,4-bis-trichloromethyl-6-(2-bromo-4-methoxy)styrylphenyl-s-three 2,4-bis-trichloromethyl-6-(3-bromo-4-methoxy)styrylphenyl-s-three , 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-three , 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-1,3,5-three ,2-[2-(2-furyl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-three ,2-[2-(5-Methyl-2-furyl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-three ,2-[2-(3,5-Dimethoxyphenyl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-three 2-[2-(3,4-Dimethoxyphenyl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-three , 2-(3,4-Extended methyldioxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-three , tris(1,3-dibromopropyl)-1,3,5-three , tris(2,3-dibromopropyl)-1,3,5-three Halogen-containing three a halogen-containing compound represented by the following formula (b3), such as a compound and tris(2,3-dibromopropyl)isocyanurate; Compounds and the like are exemplified.

上述通式(b3)中,Rb9、Rb10、Rb11各自獨立表示鹵化烷基。 In the above formula (b3), Rb 9 , Rb 10 and Rb 11 each independently represent a halogenated alkyl group.

又,其他之酸產生劑中之第二態樣,例如,α-(p-甲苯磺醯基氧基亞胺基)-苯基乙腈、α-(苯磺醯基氧基亞胺基)-2,4-二氯基苯基乙腈、α-(苯磺醯基氧基亞胺基)-2,6-二氯基苯基乙腈、α-(2-氯基苯磺醯基氧基亞胺基)-4-甲氧基苯基乙腈、α-(乙基磺醯基氧基亞胺基)-1-環戊烯基乙腈,與含有肟磺酸酯基之下述通式(b4)所表示之化合物等例示。 Further, a second aspect of the other acid generator, for example, α-(p-toluenesulfonyloxyimino)-phenylacetonitrile, α-(phenylsulfonyloxyimino)- 2,4-Dichlorophenylacetonitrile, α-(phenylsulfonyloxyimino)-2,6-dichlorophenylacetonitrile, α-(2-chlorophenylsulfonyloxy) Amino)-4-methoxyphenylacetonitrile, α-(ethylsulfonyloxyimino)-1-cyclopentenylacetonitrile, and the following formula (b4) containing an oxime sulfonate group The compounds and the like represented are exemplified.

上述通式(b4)中,Rb12表示1價、2價,或3價之有機基,Rb13表示取代或未取代之飽和烴基、不飽和烴基,或芳香族性化合物基,n表示括弧內的結構之重複單位數目。 In the above formula (b4), Rb 12 represents a monovalent, divalent or trivalent organic group, Rb 13 represents a substituted or unsubstituted saturated hydrocarbon group, an unsaturated hydrocarbon group, or an aromatic compound group, and n represents a parenthesis. The number of repeating units of the structure.

上述通式(b4)中,芳香族性化合物基表示,芳香族化合物中顯示特有的物理、化學性質之化合物的基,例如,苯基、萘基等之芳基,或呋喃基、噻吩基等之雜芳基等例示。該些可於環上具有1個以上之適當的取代基,例如,鹵素原子、烷基、烷氧基、硝基等。又,Rb13,以碳數1~6之烷基為特佳,可例如甲基、乙基、丙基、丁基等例示。特別是Rb12為芳香族性化合物基,Rb13為碳數1~4之烷基的化合物為佳。 In the above formula (b4), the aromatic compound group means a group of a compound having a specific physical or chemical property in an aromatic compound, for example, an aryl group such as a phenyl group or a naphthyl group, or a furyl group or a thienyl group. Examples of heteroaryl groups and the like. These may have one or more appropriate substituents on the ring, for example, a halogen atom, an alkyl group, an alkoxy group, a nitro group or the like. Further, Rb 13 is particularly preferably an alkyl group having 1 to 6 carbon atoms, and may, for example, be a methyl group, an ethyl group, a propyl group or a butyl group. In particular, a compound in which Rb 12 is an aromatic compound group and Rb 13 is an alkyl group having 1 to 4 carbon atoms is preferred.

上述通式(b4)所表示之酸產生劑,於n=1時,Rb12可為苯基、甲基苯基、甲氧基苯基之任一者,Rb13為甲基之化合物,具體而言,例如,α-(甲基磺醯基氧基亞胺基)-1-苯基乙腈、α-(甲基磺醯基氧基亞胺基)-1-(p-甲基苯基)乙腈、α-(甲基磺醯基氧基亞胺基)-1-(p-甲氧基苯基)乙腈、[2-(丙基磺醯基氧基亞胺基)-2,3-二羥基噻吩-3-亞基(ylidene)](o-甲苯基)乙腈等。n=2時,上述通式(b4)所表示之酸產生劑,具體而言,例如,下述式所表示之酸產生劑等例示。 In the acid generator represented by the above formula (b4), when n=1, Rb 12 may be any of a phenyl group, a methylphenyl group, and a methoxyphenyl group, and Rb 13 is a methyl group compound. For example, α-(methylsulfonyloxyimino)-1-phenylacetonitrile, α-(methylsulfonyloxyimino)-1-(p-methylphenyl) Acetonitrile, α-(methylsulfonyloxyimino)-1-(p-methoxyphenyl)acetonitrile, [2-(propylsulfonyloxyimino)-2,3 - Dihydroxythiophene-3-ylidene (o-tolyl)acetonitrile or the like. In the case of the acid generator represented by the above formula (b4), for example, an acid generator represented by the following formula is exemplified.

又,其他酸產生劑中之第三態樣,例如,陽離子部具有萘環之鎓鹽。此「具有萘環」係指,具有由萘所產生之結構之意,係指至少具有2個的環之結構,與可 維持該些之芳香族性之意。該萘環可具有碳數1~6之直鏈狀或支鏈狀烷基、羥基、碳數1~6之直鏈狀或支鏈狀之烷氧基等取代基。萘環所產生之結構,可為1價之基(遊離原子價為1價)亦可,2價之基(遊離原子價為2價)以上亦可,又以1價之基為佳(但,此時為去除與上述取代基鍵結之部份所得之遊離原子價者)。萘環之數目以1~3為佳。 Further, in the third aspect of the other acid generator, for example, the cation portion has a sulfonium salt of a naphthalene ring. The term "having a naphthalene ring" means having a structure derived from naphthalene, and means a structure having at least two rings, and Maintain the meaning of the aromaticity. The naphthalene ring may have a substituent such as a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxyl group, or a linear or branched alkoxy group having 1 to 6 carbon atoms. The structure produced by the naphthalene ring may be a monovalent group (the free atomic valence is 1 valence), or a divalent group (free valence of 2 valence) or more, and preferably a monovalent group (but In this case, the free atomic valence obtained by removing the moiety bonded to the above substituent). The number of naphthalene rings is preferably from 1 to 3.

該些陽離子部具有萘環之鎓鹽的陽離子部,以下述通式(b5)所表示之結構為佳。 The cation portion has a cation portion of a sulfonium salt of a naphthalene ring, and is preferably a structure represented by the following formula (b5).

上述通式(b5)中,Rb14、Rb15、Rb16中之至少1個為表示下述通式(b6)所表示之基,其他為表示碳數1~6之直鏈狀或支鏈狀烷基、可具有取代基之苯基、羥基,或碳數1~6之直鏈狀或支鏈狀之烷氧基。或,Rb14、Rb15、Rb16中之至少1個為下述通式(b6)所表示之基,其他剩餘之2個為各自獨立之碳數1~6之直鏈狀或支鏈狀之伸烷基,該些之末端可鍵結形成環狀亦可。以下各式中,「*」表示鍵結鍵。 In the above formula (b5), at least one of Rb 14 , Rb 15 and Rb 16 is a group represented by the following formula (b6), and the other is a linear or branched chain having 1 to 6 carbon atoms. An alkyl group, a phenyl group which may have a substituent, a hydroxyl group, or a linear or branched alkoxy group having 1 to 6 carbon atoms. Or at least one of Rb 14 , Rb 15 and Rb 16 is a group represented by the following formula (b6), and the other two are independent linear or branched carbon groups of 1 to 6 carbon atoms. The alkyl group may be bonded to form a ring at the end. In the following formulas, "*" indicates a bond key.

上述通式(b6)中,Rb17、Rb18各自獨立表示羥基、碳數1~6之直鏈狀或支鏈狀之烷氧基,或碳數1~6之直鏈狀或支鏈狀烷基,Rb19表示單鍵或可具有取代基之碳數1~6之直鏈狀或支鏈狀之伸烷基。l及m,各自獨立表示0~2之整數,l+m為3以下。其中,Rb17存在複數之情形,該些可互為相同或相異皆可。又,Rb18存在複數之情形,該些可互為相同或相異皆可。 In the above formula (b6), Rb 17 and Rb 18 each independently represent a hydroxyl group, a linear or branched alkoxy group having 1 to 6 carbon atoms, or a linear or branched chain having 1 to 6 carbon atoms. The alkyl group, Rb 19 represents a single bond or a linear or branched alkyl group having 1 to 6 carbon atoms which may have a substituent. l and m each independently represent an integer of 0 to 2, and l+m is 3 or less. Wherein, Rb 17 has a plurality of cases, and the ones may be the same or different from each other. Further, Rb 18 has a plurality of cases, and the two may be the same or different from each other.

上述Rb14、Rb15、Rb16之中,上述通式(b6)所表示之基之數,就化合物之安定性等觀點,較佳為1,其他可為碳數1~6之直鏈狀或支鏈狀之伸烷基,該些之末端可鍵結形成環狀亦可。此情形中,上述2個之伸烷基,可構成含有硫原子之3~9員環。構成環之原子(包含硫原子)數目,較佳為5~6。 Among the above Rb 14 , Rb 15 and Rb 16 , the number of the groups represented by the above formula (b6) is preferably 1 in terms of the stability of the compound, etc., and the other may be a linear chain having 1 to 6 carbon atoms. Or a branched alkyl group, and the ends may be bonded to form a ring. In this case, the above two alkyl groups may constitute a 3 to 9 member ring containing a sulfur atom. The number of atoms (including sulfur atoms) constituting the ring is preferably 5-6.

又,上述伸烷基所可具有之取代基,例如,氧原子(此情形中,為與構成伸烷基之碳原子共同形成羰基)、羥基等。 Further, the above-mentioned alkylene group may have a substituent such as an oxygen atom (in this case, a carbonyl group formed together with a carbon atom constituting an alkylene group), a hydroxyl group or the like.

又,苯基所可具有之取代基,例如,羥基、碳數1~6之直鏈狀或支鏈狀之烷氧基、碳數1~6之直鏈狀或支鏈狀烷基等。 Further, the substituent which the phenyl group may have, for example, a hydroxyl group, a linear or branched alkoxy group having 1 to 6 carbon atoms, a linear or branched alkyl group having 1 to 6 carbon atoms, or the like.

適合作為該些之陽離子部者,可列舉例如下 述式(b7)、(b8)所表示之結構等,特別是以下述式(b8)所表示之結構為佳。 Suitable as the cationic part of these, for example, the following The structure represented by the above formulas (b7) and (b8) is preferably a structure represented by the following formula (b8).

該些陽離子部,可為錪鹽亦可、鋶鹽亦可,就酸產生效率等觀點,以鋶鹽為佳。 These cationic moieties may be either a phosphonium salt or a phosphonium salt, and a phosphonium salt is preferred from the viewpoint of acid production efficiency and the like.

因此,適合作為陽離子部具有萘環之鎓鹽的陰離子部之較佳成份,以可形成鋶鹽之陰離子為佳。 Therefore, it is preferred to use a preferred component of the anion portion having a sulfonium salt of a naphthalene ring as the cation portion, and it is preferred to form an anion of the onium salt.

該些酸產生劑之陰離子部,例如,氫原子的一部份或全部被氟化之氟基烷基磺酸離子或芳基磺酸離子。 The anion portion of the acid generator, for example, a part or all of a hydrogen atom is fluorinated fluoroalkylsulfonate ion or arylsulfonate ion.

氟基烷基磺酸離子中之烷基,可為碳數1~20之直鏈狀或支鏈狀或環狀者皆可,就所產生之酸的體積密度與其擴散距離之觀點,以碳數1~10為佳。特別是以支鏈狀或環狀者,其擴散距離為較短,而為較佳。又,就可經濟地合成等觀點,以甲基、乙基、丙基、丁基、辛基等為較佳之例示內容。 The alkyl group in the fluoroalkyl sulfonate ion may be a linear or branched or cyclic carbon number of 1 to 20, and the carbon density of the acid produced and its diffusion distance are carbon The number 1~10 is better. Particularly, in the case of a branched or a ring, the diffusion distance is shorter, and is preferable. Further, in view of economical synthesis and the like, a methyl group, an ethyl group, a propyl group, a butyl group, an octyl group or the like is preferably exemplified.

芳基磺酸離子中之芳基,例如碳數6~20之芳基,且可被烷基、鹵素原子所取代或不被取代之苯基、 萘基等例示。特別是就可經濟地合成之觀點,以碳數6~10之芳基為佳。較佳成份之具體例,可例如,苯基、甲苯碸基、乙基苯基、萘基、甲基萘基等。 An aryl group in an arylsulfonic acid ion, such as an aryl group having 6 to 20 carbon atoms, and a phenyl group which may be substituted by an alkyl group, a halogen atom or not substituted, Naphthyl and the like are exemplified. In particular, from the viewpoint of economical synthesis, an aryl group having 6 to 10 carbon atoms is preferred. Specific examples of preferred components may, for example, be a phenyl group, a tolylhydryl group, an ethylphenyl group, a naphthyl group or a methylnaphthyl group.

上述氟基烷基磺酸離子或芳基磺酸離子中,氫原子的一部份或全部被氟化之情形中的氟化率,較佳為10~100%,更佳為50~100%,特佳為全部氫原子被氟原子所取代者,以其酸之強度更強而為更佳。該些成份,具體而言,例如,三氟甲烷磺酸酯、全氟丁烷磺酸酯、全氟辛烷磺酸酯、全氟苯磺酸酯等。 In the above-mentioned fluorine-based alkylsulfonic acid ion or arylsulfonic acid ion, the fluorination ratio in the case where part or all of the hydrogen atom is fluorinated is preferably from 10 to 100%, more preferably from 50 to 100%. It is particularly preferable that all of the hydrogen atoms are replaced by fluorine atoms, and the strength of the acid is stronger. The components are specifically, for example, trifluoromethanesulfonate, perfluorobutanesulfonate, perfluorooctanesulfonate, perfluorobenzenesulfonate or the like.

該些之中,較佳之陰離子部,例如下述通式(b9)所表示之內容等例示。 Among these, the preferred anion moiety is exemplified by the content represented by the following formula (b9).

上述通式(b9)中,Rb20為下述通式(b10)、(b11)所表示之基,或下述式(b12)所表示之基。以下各式中,「*」表示鍵結鍵。 In the above formula (b9), Rb 20 is a group represented by the following formulas (b10) and (b11), or a group represented by the following formula (b12). In the following formulas, "*" indicates a bond key.

上述通式(b10)中,x表示1~4之整數。又,上述通式(b11)中,Rb21,表示氫原子、羥基、碳數1~6之直鏈狀或支鏈狀烷基,或碳數1~6之直鏈狀或支鏈狀之烷氧基,y表示1~3之整數。該些之中,就安全性之觀點而言,以三氟甲烷磺酸酯、全氟丁烷磺酸酯為佳。 In the above formula (b10), x represents an integer of 1 to 4. Further, in the above formula (b11), Rb 21 represents a hydrogen atom, a hydroxyl group, a linear or branched alkyl group having 1 to 6 carbon atoms, or a linear or branched chain having 1 to 6 carbon atoms. Alkoxy, y represents an integer from 1 to 3. Among these, trifluoromethanesulfonate and perfluorobutanesulfonate are preferred from the viewpoint of safety.

又,陰離子部,以使用下述通式(b13)、(b14)所表示之含氮者為佳。 Further, the anion portion is preferably a nitrogen-containing one represented by the following general formulae (b13) and (b14).

上述通式(a13)中,Xb表示,至少1個氫原子被氟原子所取代之直鏈狀或支鏈狀之伸烷基,該伸烷基之碳數為2~6,更佳為3~5,最佳為碳數3。又,上述通式(a14)中,Yb、Zb各自獨立表示至少1個氫原子被氟原子所取代之直鏈狀或支鏈狀烷基,該烷基之碳數為1~10,更佳為1~7,最佳為1~3。 In the above formula (a13), Xb represents a linear or branched alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and the carbon number of the alkyl group is 2 to 6, more preferably 3 ~5, the best is carbon number 3. Further, in the above formula (a14), Yb and Zb each independently represent a linear or branched alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and the alkyl group has a carbon number of from 1 to 10, more preferably It is 1~7, and the best is 1~3.

Xb之伸烷基之碳數,或Yb、Zb之烷基的碳數越小時,以其對有機溶劑具有良好之溶解性之觀點而為較佳。 The carbon number of the alkyl group of Xb or the smaller the carbon number of the alkyl group of Yb and Zb is preferable from the viewpoint of having good solubility in an organic solvent.

又,Xb之伸烷基或Yb、Zb之烷基中,被氟原子所取代之氫原子數越多時,以其酸之強度更強而為更 佳。該伸烷基或烷基中氟原子之比例,即氟化率,較佳為70~100%,更佳為90~100%,最佳為全部氫原子被氟原子所取代之全氟伸烷基或全氟烷基。 Further, in the alkyl group of Xb or the alkyl group of Yb or Zb, the more the number of hydrogen atoms substituted by the fluorine atom, the stronger the strength of the acid is. good. The ratio of the fluorine atom in the alkyl group or the alkyl group, that is, the fluorination rate, is preferably 70 to 100%, more preferably 90 to 100%, and most preferably the perfluoroalkylene group in which all hydrogen atoms are replaced by fluorine atoms. Base or perfluoroalkyl.

作為該些陽離子部具有萘環之鎓鹽之較佳化合物,例如,下述式(b15)、(b16)所表示之化合物等例示。 Preferred examples of the cation salt having a naphthalene ring in the cation portion are, for example, compounds represented by the following formulas (b15) and (b16).

又,其他酸產生劑中之第四態樣,例如,雙(p-甲苯磺醯基)重氮甲烷、雙(1,1-二甲基乙基磺醯基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(2,4-二甲基苯基磺醯基)重氮甲烷等雙磺醯基重氮甲烷類;p-甲苯磺酸2-硝基苄基、p-甲苯磺酸2,6-二硝基苄基、硝基苄基甲苯磺酸酯、二硝基苄基甲苯磺酸酯(nitrobenzyl tosylate)、硝基苄基磺酸酯、硝基苄基碳酸酯、二硝基苄基碳酸酯等硝基苄基衍生物;五倍子酚三氟甲磺酸酯(Trimesylate)、五倍子酚三甲苯磺酸酯、苄基甲苯磺酸酯、苄基磺酸酯、N-甲基磺醯基氧代琥珀醯亞胺、N-三氯甲基磺醯基氧代琥珀醯亞 胺、N-苯基磺醯基氧代馬來醯亞胺、N-甲基磺醯基氧代鄰苯二甲醯亞胺等磺酸酯類;N-羥基鄰苯二甲醯亞胺、N-羥基萘醯亞胺等三氟甲烷磺酸酯類;二苯基錪六氟基磷酸酯、(4-甲氧基苯基)苯基錪三氟甲烷磺酸酯、雙(p-tert-丁基苯基)錪三氟甲烷磺酸酯、三苯基鋶六氟基磷酸酯、(4-甲氧基苯基)二苯基鋶三氟甲烷磺酸酯、(p-tert-丁基苯基)二苯基鋶三氟甲烷磺酸酯等鎓鹽類;安息香甲苯磺酸酯(benzoin tosylate)、α-甲基安息香甲苯磺酸酯等安息香甲苯磺酸酯類;其他二苯基錪鹽、三苯基鋶鹽、苯基重氮鹽、苄基碳酸酯等。 Further, a fourth aspect of the other acid generators, for example, bis(p-toluenesulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, double (ring) Dihexylsulfonyl diazomethane diazomethane, bis(2,4-dimethylphenylsulfonyl)diazomethane, p-toluenesulfonic acid 2-nitrobenzyl, p -toluenesulfonic acid 2,6-dinitrobenzyl, nitrobenzyl tosylate, nitrobenzyl tosylate, nitrobenzyl sulfonate, nitrobenzyl carbonate a nitrobenzyl derivative such as an ester or a dinitrobenzyl carbonate; a gallicyl triflate, a gallicyl trityl sulfonate, a benzyl tosylate, a benzyl sulfonate, N-methylsulfonyloxy amber succinimide, N-trichloromethylsulfonyloxy amber a sulfonate such as an amine, N-phenylsulfonyloxymaleimide or N-methylsulfonyloxyphthalimide; N-hydroxyphthalimide, Trifluoromethanesulfonate such as N-hydroxynaphthyl imine; diphenylphosphonium hexafluorophosphate, (4-methoxyphenyl)phenylphosphonium trifluoromethanesulfonate, double (p-tert -butylphenyl)phosphonium trifluoromethanesulfonate, triphenylsulfonium hexafluorophosphate, (4-methoxyphenyl)diphenylphosphonium trifluoromethanesulfonate, (p-tert-butyl Anthracene salts such as phenyl)diphenylphosphonium trifluoromethanesulfonate; benzoin tosylate, α-methylbenzoin tosylate and other benzoin tosylate; other diphenyl Anthracene salt, triphenylsulfonium salt, phenyldiazonium salt, benzyl carbonate, and the like.

其他之酸產生劑,較佳為上述通式(b4)所表示之化合物,且較佳之n之值為2,又,較佳之Rb12為,2價之碳數1~8之取代或非取代之伸烷基,或取代或非取代之芳香族基,又,較佳之Rb13為碳數1~8之取代或非取代之烷基,或取代或非取代之芳基,但並非僅限定於此。 The other acid generator is preferably a compound represented by the above formula (b4), and preferably has a value of n of 2, and more preferably, Rb 12 is a substituted or unsubstituted carbon of 1 to 8 of 2 valence. The alkyl group, or the substituted or unsubstituted aromatic group, preferably, Rb 13 is a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, or a substituted or unsubstituted aryl group, but is not limited thereto. this.

與該些其他之酸產生劑合併使用情形中,其使用比例只要不會阻礙本發明之效果之範圍時,並未有特別之限定。通常,相對於包含上述通式(b5)所表示之陽離子部與上述通式(b-an1)所表示之陰離子部之酸產生劑100質量份,其他之酸產生劑為1~300質量份,較佳為10~100質量份。 In the case of being used in combination with these other acid generators, the ratio of use thereof is not particularly limited as long as it does not hinder the effect of the present invention. In general, the other acid generator is 1 to 300 parts by mass based on 100 parts by mass of the acid generator including the cationic portion represented by the above formula (b5) and the anion portion represented by the above formula (b-an1). It is preferably 10 to 100 parts by mass.

酸產生劑(B)可單獨使用亦可,或將2種以上組合使用亦可。酸產生劑(B)之含量,相對於本發明之光 阻組成物的全質量,以0.1~10質量%為佳,以0.5~3質量%為較佳。 The acid generator (B) may be used singly or in combination of two or more. The content of the acid generator (B) relative to the light of the present invention The total mass of the resist composition is preferably 0.1 to 10% by mass, preferably 0.5 to 3% by mass.

<任意成份> <arbitrary ingredients> [(E)成份] [(E) ingredients]

本發明之光阻組成物中,就防止感度劣化,或提高光阻圖型形狀、存放之經時安定性等目的,可含有作為任意成份之由有機羧酸,及磷之含氧酸及其衍生物所成群所選擇之至少一種的化合物(E)(以下,亦稱為(E)成份)。 The photoresist composition of the present invention may contain an organic carboxylic acid and an oxyacid of phosphorus as an optional component for the purpose of preventing deterioration of sensitivity, or improving the shape of the photoresist pattern, stability over time of storage, and the like. At least one compound (E) (hereinafter also referred to as (E) component) selected from a group of derivatives.

有機羧酸,例如,乙酸、丙二酸、檸檬酸、蘋果酸、琥珀酸、安息香酸、水楊酸等為較佳。 Organic carboxylic acids such as acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are preferred.

磷之含氧酸,例如,磷酸、膦酸、次膦酸等,該些之中特別是以膦酸為佳。 Phosphorus oxyacids, for example, phosphoric acid, phosphonic acid, phosphinic acid, etc., among which phosphonic acid is particularly preferred.

磷之含氧酸之衍生物,例如,上述含氧酸的氫原子被烴基所取代之酯等,前述烴基例如,碳數1~5之烷基、碳數6~15之芳基等。 The derivative of the oxyacid of phosphorus, for example, an ester in which a hydrogen atom of the above-mentioned oxo acid is substituted with a hydrocarbon group, and the hydrocarbon group is, for example, an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 15 carbon atoms.

磷酸之衍生物,例如,磷酸二-n-丁酯、磷酸二苯酯等磷酸酯等。 A derivative of phosphoric acid, for example, a phosphate such as di-n-butyl phosphate or diphenyl phosphate.

膦酸之衍生物,例如,膦酸二甲酯、膦酸-二-n-丁酯、膦酸苯酯、膦酸二苯酯、膦酸二苄酯等膦酸酯等。 A derivative of a phosphonic acid, for example, a phosphonate such as dimethyl phosphonate, di-n-butyl phosphonate, phenyl phosphonate, diphenyl phosphonate or dibenzyl phosphonate.

次膦酸之衍生物,例如,次膦酸酯或次膦酸苯酯等。 A derivative of a phosphinic acid, for example, a phosphinate or a phenyl phosphinate.

(E)成份,可單獨使用1種亦可,將2種以上合併使用亦可。 The component (E) may be used singly or in combination of two or more.

(E)成份,相對於樹脂固形成份((A)成份與(C)成份之 合計)100質量份,通常為使用0.01~5.0質量份之範圍。 (E) component, relative to the resin solid component ((A) component and (C) component The total amount is 100 parts by mass, and is usually in the range of 0.01 to 5.0 parts by mass.

[其他添加劑] [Other additives]

本發明之光阻組成物中,可再配合所期待之目的,適當添加含有具有混合性的添加劑,例如,用來改良光阻膜之性能的加成性樹脂、溶解抑制劑、可塑劑、安定劑、著色劑、抗暈劑、染料等。 In the photoresist composition of the present invention, an additive containing a mixture property, for example, an additive resin for improving the performance of the photoresist film, a dissolution inhibitor, a plasticizer, and stability can be appropriately added in combination with the intended purpose. Agents, colorants, antihalation agents, dyes, and the like.

[(S)成份] [(S) ingredients]

本發明之光阻組成物,可將材料溶解於有機溶劑(以下,亦稱為(S)成份)之方式而可製造。 The photoresist composition of the present invention can be produced by dissolving a material in an organic solvent (hereinafter also referred to as (S) component).

(S)成份,只要可溶解所使用之各成份,並使其形成均勻之溶液之成份即可,其可由以往作為化學增強型光阻的溶劑之任意公知成份中,適當地選擇任意1種或2種以上予以使用。 (S) component, as long as it can dissolve the components to be used and form a homogeneous solution, and it can be appropriately selected from any of the known components of the solvent which is conventionally used as a chemically-enhanced photoresist. Two or more types are used.

例如,γ-丁內酯(GBL)等內酯類;丙酮、甲基乙基酮(MEK)、環己酮、甲基-n-戊基酮、甲基異戊基酮、2-己酮等酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯,或二丙二醇單乙酸酯等具有酯鍵結之化合物、前述多元醇類或前述具有酯鍵結之化合物的單甲醚、單乙醚、單丙基醚、單丁基醚等單烷基醚或單苯醚等具有醚鍵結之化合物等多元醇類之衍生物[該些之中,又以丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)為佳];二噁烷等 環式醚類,或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等酯類;苯甲醚、乙基苄醚、甲苯酚基甲醚、二苯醚、二苄醚、苯乙醚、丁基苯醚、乙基苯、二乙酯苯、戊基苯、異丙基苯、甲苯、二甲苯、異丙基甲苯、均三甲苯等芳香族系有機溶劑、二甲基亞碸(DMSO)等。 For example, lactones such as γ-butyrolactone (GBL); acetone, methyl ethyl ketone (MEK), cyclohexanone, methyl-n-amyl ketone, methyl isoamyl ketone, 2-hexanone Ketones; polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoethyl a compound having an ester bond such as an acid ester, a monomethyl ether such as a polyhydric alcohol or a compound having an ester bond, a monoalkyl ether such as monoethyl ether, monopropyl ether or monobutyl ether, or monophenyl ether. a derivative of a polyhydric alcohol such as an ether-bonded compound [in which propylene glycol monomethyl ether acetate (PGMEA) or propylene glycol monomethyl ether (PGME) is preferred]; dioxane, etc. Cyclic ethers, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxylate Ester such as ethyl propionate; anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenyl ether, butyl phenyl ether, ethyl benzene, diethyl benzene, pentyl An aromatic organic solvent such as benzene, cumene, toluene, xylene, isopropyl toluene or mesitylene, or dimethyl hydrazine (DMSO).

又,本發明之光阻組成物中,就調整黏度之目的,可適當添加有機溶劑。有機溶劑之具體例如,甲基異戊酮等酮類;乙二醇、乙二醇單乙酸酯、二乙二醇、二乙二醇單乙酸酯、丙二醇、丙二醇單乙酸酯、二丙二醇,及二丙二醇單乙酸酯之單甲醚、單乙醚、單丙基醚、單丁基醚,或單苯醚等多元醇類及其衍生物;二噁烷等環式醚類;乙醯乙酸甲酯、乙醯乙酸乙酯、丙酮酸乙酯、乙氧基乙酸乙酯、2-羥基丙酸甲酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯等酯類;甲苯、二甲苯等芳香族烴類等。該些可單獨使用亦可,或將2種以上混合使用亦可。 Further, in the photoresist composition of the present invention, an organic solvent can be appropriately added for the purpose of adjusting the viscosity. Specific examples of the organic solvent include ketones such as methyl isoamyl ketone; ethylene glycol, ethylene glycol monoacetate, diethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, and a propylene glycol, a monomethyl ether of dipropylene glycol monoacetate, a polyether such as monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether; and a derivative thereof; a cyclic ether such as dioxane; Methyl acetate, ethyl acetate, ethyl pyruvate, ethyl ethoxyacetate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, 2-hydroxy-2-methylpropionic acid Esters such as ester, methyl 2-hydroxy-3-methylbutanoate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate; toluene, xylene, etc. Aromatic hydrocarbons, etc. These may be used singly or in combination of two or more.

該些之有機溶劑可單獨使用亦可,或以2種以上之混合溶劑方式使用亦可。 These organic solvents may be used singly or in combination of two or more.

其中,又以PGMEA、3-甲氧基丁基乙酸酯為佳。 Among them, PGMEA and 3-methoxybutyl acetate are preferred.

(S)成份之使用量並未有特別之限定,其可以塗佈於基板等之濃度,配合塗佈膜厚度等作適當之設定。 一般而言,多將光阻組成物之固形成份濃度設定為1~65質量%,較佳為2~65質量%之範圍內進行使用,但於厚膜用光阻組成物情形中之固形成份濃度,以30質量%以上為佳,以30質量%至65質量%之範圍為更佳。 The amount of the component (S) to be used is not particularly limited, and it can be applied to a concentration of a substrate or the like, and the thickness of the coating film can be appropriately set. In general, the solid concentration of the photoresist composition is set to be in the range of 1 to 65% by mass, preferably 2 to 65% by mass, but in the case of a photoresist composition for a thick film, a solid component is used. The concentration is preferably 30% by mass or more, more preferably 30% by mass to 65% by mass.

《其他》 "other"

本發明之光阻組成物中,就提高可塑性之目的,可再含有聚乙烯樹脂。聚乙烯樹脂,以質量平均分子量為10,000~200,000為佳,以50,000~100,000為較佳。 The photoresist composition of the present invention may further contain a polyethylene resin for the purpose of improving plasticity. The polyethylene resin preferably has a mass average molecular weight of 10,000 to 200,000 and preferably 50,000 to 100,000.

該些聚乙烯樹脂為聚(乙烯基低級烷基醚),其可由下述通式(Vi-1)所表示之乙烯基低級烷基醚之單獨或2種以上之混合物經聚合所製得之聚合物或共聚物所形成者。 The polyethylene resin is a poly(vinyl lower alkyl ether) which can be obtained by polymerization of a single or a mixture of two or more kinds of vinyl lower alkyl ethers represented by the following formula (Vi-1). The formation of a polymer or copolymer.

上述通式(Vi-1)中,Rvi1表示碳數1~6之直鏈狀或支鏈狀烷基。 In the above formula (Vi-1), Rvi 1 represents a linear or branched alkyl group having 1 to 6 carbon atoms.

該些聚乙烯樹脂為由乙烯基系化合物所得之聚合物。該些聚乙烯樹脂,具體例如,聚氯乙烯、聚苯乙烯、聚羥基苯乙烯、聚乙烯基乙酸、聚乙烯基安息香酸、聚乙烯基甲醚、聚乙烯基乙醚、聚乙烯基醇、聚乙烯基吡 咯啶酮、聚乙烯基酚,及該些之共聚物等。聚乙烯樹脂,就具有低玻璃移轉點之觀點,較佳為聚乙烯基甲醚。 These polyethylene resins are polymers obtained from vinyl compounds. The polyethylene resin, specifically, for example, polyvinyl chloride, polystyrene, polyhydroxystyrene, polyvinyl acetic acid, polyvinyl benzoic acid, polyvinyl methyl ether, polyvinyl ether, polyvinyl alcohol, poly Vinylpyrrol A bromo ketone, a polyvinyl phenol, a copolymer of these, and the like. The polyethylene resin is preferably a polyvinyl methyl ether from the viewpoint of having a low glass shift point.

又,本發明之光阻組成物,就提高與基板之接著性等目的,亦可再含有接著輔助劑。所使用之接著輔助劑,以官能性矽烷偶合劑為佳。官能性矽烷偶合劑,例如,具有羧基、甲基丙烯醯基、異氰酸酯基、環氧基等反應性取代基之矽烷偶合劑等例示。又,官能性矽烷偶合劑之具體例如,三甲氧基矽烷基安息香酸、γ-甲基丙烯醯氧丙基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、乙烯基三甲氧基矽烷、γ-乙二醇氧基丙基三甲氧基矽烷(γ-Glycidoxypropyltrimethoxysilane)、β-(3,4-環氧基環己基)乙基三甲氧基矽烷等。此接著輔助劑之含量,相對於上述樹脂(A)及鹼可溶性樹脂(C)之合計質量100質量份,以20質量份以下為佳。 Further, the photoresist composition of the present invention may further contain an auxiliary agent for the purpose of improving adhesion to a substrate. The auxiliary agent to be used is preferably a functional decane coupling agent. The functional decane coupling agent is exemplified by, for example, a decane coupling agent having a reactive substituent such as a carboxyl group, a methacryl fluorenyl group, an isocyanate group or an epoxy group. Further, specific examples of the functional decane coupling agent include, for example, trimethoxydecyl benzoic acid, γ-methacryloxypropyltrimethoxydecane, vinyltriethoxydecane, vinyltrimethoxydecane, γ - γ-Glycidoxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like. The content of the auxiliary agent is preferably 20 parts by mass or less based on 100 parts by mass of the total mass of the resin (A) and the alkali-soluble resin (C).

又,本發明之光阻組成物中,就提高塗佈性、消泡性、平滑性等之目的,可再含有界面活性劑。界面活性劑之例如,BM-1000、BM-1100(皆為BM化學公司製)、美格氟F142D、美格氟F172、美格氟F173、美格氟F183(皆為大日本塗料化學工業公司製)、氟羅拉FC-135、氟羅拉FC-170C、氟羅拉FC-430、氟羅拉FC-431(皆為住友3M公司製)、沙氟隆S-112、沙氟隆S-113、沙氟隆S-131、沙氟隆S-141、沙氟隆S-145(皆為旭硝子公司製)、SH-28PA、SH-190、SH-193、SZ-6032、SF-8428(皆為東麗矽氧公司製)等市售之氟系界面活性劑等例示,但並不 僅限定於此。 Further, in the photoresist composition of the present invention, a surfactant may be further contained for the purpose of improving coatability, defoaming property, smoothness, and the like. For surfactants, for example, BM-1000, BM-1100 (both manufactured by BM Chemical Co., Ltd.), Megfried F142D, Megfried F172, Megfried F173, and Megfried F183 (all are Japan Nippon Paint Chemical Industry Co., Ltd. System, Fluora FC-135, Fluora FC-170C, Fluora FC-430, Fluora FC-431 (all manufactured by Sumitomo 3M), Shaflon S-112, Shaflon S-113, sand Fluorine S-131, Shaflon S-141, Shaflon S-145 (all manufactured by Asahi Glass Co., Ltd.), SH-28PA, SH-190, SH-193, SZ-6032, SF-8428 (both are east) Commercially available fluorine-based surfactants, etc., etc., but not It is limited to this.

又,本發明之光阻組成物中,就對鹼顯影液之溶解性進行微調整之目的,可再含有酸、酸酐,或高沸點溶劑。 Further, in the photoresist composition of the present invention, an acid, an acid anhydride or a high boiling point solvent may be further contained for the purpose of finely adjusting the solubility of the alkali developing solution.

酸及酸酐之例如,乙酸、丙酸、n-丁酸、異丁酸、n-戊酸、異戊酸、安息香酸、桂皮酸等單羧酸;乳酸、2-羥基丁酸、3-羥基丁酸、水楊酸、m-羥基安息香酸、p-羥基安息香酸、2-羥基桂皮酸、3-羥基桂皮酸、4-羥基桂皮酸、5-羥基異苯二甲酸、丁香酸等羥基單羧酸;草酸、琥珀酸、戊二酸、己二酸、馬來酸、衣康酸、六氫苯二甲酸、苯二甲酸、異苯二甲酸、對苯二甲酸、1,2-環己烷二羧酸、1,2,4-環己烷三羧酸、丁烷四羧酸、偏苯三酸、苯均四酸、環戊烷四羧酸、丁烷四羧酸、1,2,5,8-伸萘四羧酸等多元羧酸;衣康酸酐、琥珀酸酐、檸康酸酐、十二烯琥珀酸酐、三羰基酸酐、馬來酸酐、六氫苯二甲酸酐、甲基四氫苯二甲酸酐、5-雙環庚烯-2,3-雙羧酸酐(5-norbornene-2,3-dicarboxylic acid)、1,2,3,4-丁烷四羧酸酐、環戊烷四羧酸二酐、苯二甲酸酐、苯均四酸酐、偏苯三酸酐、二苯甲酮四羧酸酐、偏苯三酸酯乙二醇雙酐、偏苯三酸酯丙二醇三酐等酸酐。 Examples of acids and anhydrides are monocarboxylic acids such as acetic acid, propionic acid, n-butyric acid, isobutyric acid, n-valeric acid, isovaleric acid, benzoic acid, cinnamic acid, etc.; lactic acid, 2-hydroxybutyric acid, 3-hydroxyl Butyl acid, salicylic acid, m-hydroxybenzoic acid, p-hydroxybenzoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, 5-hydroxyisophthalic acid, syringic acid, etc. Carboxylic acid; oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid, terephthalic acid, 1,2-cyclohexane Alkanedicarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, butanetetracarboxylic acid, trimellitic acid, pyromellitic acid, cyclopentanetetracarboxylic acid, butanetetracarboxylic acid, 1,2 , a polycarboxylic acid such as 5,8-naphthotetracarboxylic acid; itaconic anhydride, succinic anhydride, citraconic anhydride, dodecene succinic anhydride, tricarbonyl anhydride, maleic anhydride, hexahydrophthalic anhydride, methyl four Hydrophthalic anhydride, 5-norbornene-2,3-dicarboxylic acid, 1,2,3,4-butanetetracarboxylic anhydride, cyclopentane IV Carboxylic dianhydride, phthalic anhydride, pyromellitic anhydride, trimellitic anhydride Benzophenone tetracarboxylic anhydride, ethylene glycol bis-trimellitate dianhydride, trimellitic anhydride acid anhydride three glycol esters.

又,高沸點溶劑之例如,N-甲基甲醯胺、N,N-二甲基甲醯胺、N-甲基甲醯苯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮、二甲基亞碸、苄基乙醚、二己基醚、丙酮基丙酮、異佛爾酮、己酸、辛酸、 1-辛醇、1-壬醇、苄基醇、乙酸苄酯、安息香酸乙酯、草酸二乙酯、馬來酸二乙酯、γ-丁內酯、碳酸乙烯、碳酸丙烯、苯基溶纖素乙酸酯等。 Further, examples of the high boiling point solvent are N-methylformamide, N,N-dimethylformamide, N-methylformamide, N-methylacetamide, N,N-dimethyl Acetamine, N-methylpyrrolidone, dimethyl hydrazine, benzyl ether, dihexyl ether, acetonyl acetone, isophorone, hexanoic acid, octanoic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl Fibrin acetate and the like.

上述為對鹼顯影液之溶解性進行微調整之目的之化合物的使用量,可配合用途.塗佈方法等進行調整,只要可使組成物形成均勻混合狀態時,並未有特別限定之成份,一般相對於所得組成物全質量,為60質量%以下,較佳為40質量%以下。 The above-mentioned amount of the compound for the purpose of finely adjusting the solubility of the alkali developing solution can be used in combination. When the coating method and the like are adjusted, the composition is not particularly limited as long as the composition can be uniformly mixed, and is generally 60% by mass or less, preferably 40% by mass or less based on the total mass of the obtained composition.

本發明之光阻組成物之製作,例如,可將上述各成份僅依通常之方法混合、攪拌即可,必要時,可使用溶解器(Dissolver)、均質攪拌器、3輥研磨器等分散機進行分散、混合。又,混合後,可再使用網式、膜式過濾器等進行過濾。 For the production of the photoresist composition of the present invention, for example, the above components may be mixed and stirred only by a usual method, and if necessary, a disperser such as a dissolver, a homomixer, or a 3-roll mill may be used. Disperse and mix. Further, after mixing, it can be filtered using a mesh type, a membrane filter or the like.

本發明之光阻組成物為,適合於支撐體上形成約5~約200μm、較佳為約10~約120μm、更佳為約10~約100μm之膜厚的厚膜光阻層者。 The photoresist composition of the present invention is a thick film resist layer suitable for forming a film thickness of from about 5 to about 200 μm, preferably from about 10 to about 120 μm, more preferably from about 10 to about 100 μm on the support.

支撐體,並未有特別之限定,其可使用以往公知之材料,例如,電子構件用之基板,或於其上形成特定配線圖型者等。此基板,例如,矽、氮化矽、鈦、鉭、鉑、鈦鎢、銅、鉻、鐵、鋁等金屬製之基板或玻璃基板等。特別是,本實施形態中所使用之厚膜用化學增強型正型光阻組成物,於銅基板上亦可形成良好之光阻圖型。配線圖型之材料,例如可使用銅、銲料、鉻、鋁、鎳、金等。 The support is not particularly limited, and a conventionally known material such as a substrate for an electronic component or a specific wiring pattern formed thereon may be used. The substrate is, for example, a substrate made of a metal such as tantalum, tantalum nitride, titanium, tantalum, platinum, titanium tungsten, copper, chromium, iron or aluminum, or a glass substrate. In particular, the chemically-enhanced positive-type photoresist composition for thick films used in the present embodiment can form a good photoresist pattern on a copper substrate. As the material of the wiring pattern, for example, copper, solder, chromium, aluminum, nickel, gold, or the like can be used.

《光阻圖型之形成方法》 "Formation Method of Photoresist Pattern"

本發明之第二態樣的光阻圖型之形成方法,更具體而言,例如可依以下方式進行。 The method for forming the photoresist pattern of the second aspect of the present invention can be carried out, for example, in the following manner.

首先,將前述光阻組成物使用旋轉塗佈器等塗佈於支撐體上,例如於80~150℃之溫度條件下施以40~120秒鐘、較佳為60~90秒鐘之燒焙(Post Apply Bake(PAB))處理,以形成光阻膜。其次,例如,使用ArF曝光裝置、電子線描繪裝置、EUV曝光裝置等曝光裝置,介由形成特定圖型之遮罩(遮罩圖型),對該光阻膜進行曝光,或不介由遮罩圖型而以電子線直接照射之描繪等進行選擇性曝光後,例如於80~150℃之溫度條件下,施以40~120秒鐘、較佳為60~90秒鐘之燒焙(Post Exposure Bake(PEB))處理。將該光阻膜使用有機系顯影液進行顯影處理後,較佳為使用含有有機溶劑之洗滌液進行洗滌處理、乾燥。 First, the photoresist composition is applied onto a support using a spin coater or the like, for example, baked at a temperature of 80 to 150 ° C for 40 to 120 seconds, preferably 60 to 90 seconds. (Post Apply Bake (PAB)) treatment to form a photoresist film. Next, for example, an exposure device such as an ArF exposure device, an electron beam drawing device, or an EUV exposure device is used to expose the photoresist film by masking a mask pattern (mask pattern) or not. After the selective exposure of the mask pattern and the direct illumination of the electron beam, for example, baking is performed for 40 to 120 seconds, preferably 60 to 90 seconds, at a temperature of 80 to 150 ° C (Post). Exposure Bake (PEB)) processing. After the photoresist film is subjected to development treatment using an organic developer, it is preferred to carry out a washing treatment and drying using a washing liquid containing an organic solvent.

前述顯影處理或洗滌處理之後,可使用超臨界流體將附著於圖型上之顯影液或洗滌液進行去除處理。 After the development treatment or the washing treatment, the developer or the washing liquid attached to the pattern may be subjected to a removal treatment using a supercritical fluid.

又,依情形之不同,亦可於顯影處理、洗滌處理或超臨界流體處理之後,以燒焙(後燒焙)處理之方式去除殘存之有機溶劑。 Further, depending on the case, the residual organic solvent may be removed by a baking (post-baking) treatment after the development treatment, the washing treatment or the supercritical fluid treatment.

支撐體,並未有特別之限定,其可使用以往公知之材料,例如,電子構件用之基板,或於其上形成特定配線圖型者等。更具體而言,例如,矽晶圓、銅、鉻、鐵、鋁等金屬製之基板,或玻璃基板等。配線圖型之材 料,例如,可使用銅、鋁、鎳、金等。 The support is not particularly limited, and a conventionally known material such as a substrate for an electronic component or a specific wiring pattern formed thereon may be used. More specifically, for example, a substrate made of a metal such as germanium wafer, copper, chromium, iron, or aluminum, or a glass substrate. Wiring pattern For example, copper, aluminum, nickel, gold, or the like can be used.

又,支撐體亦可為於上述基板上,設置有無機系及/或有機系之膜所得者。無機系之膜,例如,無機抗反射膜(無機BARC)等例示。有機系之膜,例如,有機抗反射膜(有機BARC)或多層光阻法中下層有機膜等有機膜等例示。 Further, the support may be obtained by providing an inorganic or/or organic film on the substrate. An inorganic film, for example, an inorganic antireflection film (inorganic BARC) or the like is exemplified. The organic film is exemplified by an organic film such as an organic antireflection film (organic BARC) or a multilayer organic film in a multilayer photoresist method.

其中,該多層光阻法係指,基板上,設有至少一層之有機膜(下層有機膜),與至少一層之光阻膜(上層光阻膜),並以形成於上層光阻膜之光阻圖型作為遮罩,進行下層有機膜之圖型成形(patterning)之方法,其可形成高長徑比之圖型。即,依多層光阻法,因其可以下層有機膜確保所需要之厚度,故可使光阻膜薄膜化,而可形成高長徑比之微細圖型。 Wherein, the multilayer photoresist method means that at least one organic film (lower organic film) and at least one photoresist film (upper photoresist film) are disposed on the substrate, and the light formed on the upper photoresist film is formed. The pattern of the resist pattern is used as a mask to perform patterning of the underlying organic film, which can form a pattern of high aspect ratio. That is, according to the multilayer photoresist method, since the thickness of the lower organic film can be ensured, the photoresist film can be thinned, and a fine pattern having a high aspect ratio can be formed.

多層光阻法中,基本上區分為形成上層光阻膜,與下層有機膜之二層結構之方法(2層光阻法),與上層光阻膜與下層有機膜之間,設有一層以上的中間層(金屬薄膜等)之三層以上的多層結構之方法(3層光阻法)。 In the multilayer photoresist method, it is basically divided into a method of forming an upper photoresist film and a two-layer structure of a lower organic film (two-layer photoresist method), and a layer between the upper photoresist film and the lower organic film. A method of three-layer or more multilayer structure of an intermediate layer (metal thin film or the like) (three-layer photoresist method).

曝光所使用之波長,並未有特別之限定,其可使用ArF準分子雷射、KrF準分子雷射、F2準分子雷射、EUV(極紫外線)、VUV(真空紫外線)、EB(電子線)、X線、軟X線等輻射線進行。前述光阻組成物,作為KrF準分子雷射、ArF準分子雷射、EB或EUV用時具有高度有用性,作為ArF準分子雷射、EB或EUV用時特別有用。 The wavelength used for the exposure is not particularly limited, and an ArF excimer laser, a KrF excimer laser, an F 2 excimer laser, an EUV (very ultraviolet ray), a VUV (vacuum ultraviolet ray), an EB (electron) can be used. Radiation lines such as line), X-ray, and soft X-ray are performed. The photoresist composition is highly useful as a KrF excimer laser, ArF excimer laser, EB or EUV, and is particularly useful as an ArF excimer laser, EB or EUV.

光阻膜之曝光方法,可為於空氣或氮氣等惰性氣體中進行之一般性曝光(乾式曝光)亦可、浸潤式曝光(Liquid Immersion Lithography)亦可。 The exposure method of the photoresist film may be general exposure (dry exposure) or liquid immersion exposure (Liquid Immersion Lithography) performed in an inert gas such as air or nitrogen.

浸潤式曝光為,預先於光阻膜與曝光裝置之最下位置的透鏡之間,充滿具有折射率較空氣之折射率為大之溶劑(浸潤介質),並於該狀態下進行曝光(浸潤式曝光)之曝光方法。 The immersion exposure is performed by filling a solvent having a refractive index higher than that of air (immersion medium) between the photoresist film and the lens at the lowest position of the exposure device, and exposing in this state (immersion type) Exposure method.

浸潤介質以具有折射率較空氣之折射率為大,且較被曝光之光阻膜所具有之折射率為更小之溶劑為佳。該溶劑之折射率,只要為前述範圍內時,並未有特別之限制。 The immersion medium is preferably a solvent having a refractive index larger than that of air and having a refractive index smaller than that of the exposed photoresist film. The refractive index of the solvent is not particularly limited as long as it is within the above range.

具有折射率較空氣之折射率為大,且較前述光阻膜之折射率為更小之溶劑,例如,水、氟系惰性液體、矽系溶劑、烴系溶劑等。 A solvent having a refractive index larger than that of air and having a smaller refractive index than the resist film, for example, water, a fluorine-based inert liquid, an oxime-based solvent, a hydrocarbon-based solvent, or the like.

氟系惰性液體之具體例如,C3HCl2F5、C4F9OCH3、C4F9OC2H5、C5H3F7等氟系化合物為主成份之液體等,又以沸點為70~180℃者為佳,以80~160℃者為較佳。氟系惰性液體為具有上述範圍之沸點者時,於曝光結束後,可以簡便之方法去除浸潤用介質,而為較佳。 Specific examples of the fluorine-based inert liquid include, for example, a liquid such as C 3 HCl 2 F 5 , C 4 F 9 OCH 3 , C 4 F 9 OC 2 H 5 or C 5 H 3 F 7 as a main component, Those with a boiling point of 70-180 ° C are preferred, and those with a boiling point of 80-160 ° C are preferred. When the fluorine-based inert liquid has a boiling point in the above range, it is preferred to remove the wetting medium in a simple manner after the completion of the exposure.

氟系惰性液體,特別是以烷基的氫原子全部被氟原子所取代之全氟烷基化合物為佳。全氟烷基化合物,具體而言,例如,全氟烷基醚化合物或全氟烷基胺化合物等。 The fluorine-based inert liquid is particularly preferably a perfluoroalkyl compound in which all hydrogen atoms of the alkyl group are replaced by fluorine atoms. The perfluoroalkyl compound is specifically, for example, a perfluoroalkyl ether compound or a perfluoroalkylamine compound.

又,具體而言,前述全氟烷基醚化合物,可例如全氟(2-丁基-四氫呋喃)(沸點102℃),前述全氟烷基胺化合物,可例如全氟三丁基胺(沸點174℃)。 Further, specifically, the perfluoroalkyl ether compound may, for example, be perfluoro(2-butyl-tetrahydrofuran) (boiling point: 102 ° C), and the perfluoroalkylamine compound may, for example, be perfluorotributylamine (boiling point) 174 ° C).

浸潤介質,就費用、安全性、環境問題、廣泛使用性等觀點,以使用水為更佳。 Infiltration of the medium is more preferable in terms of cost, safety, environmental problems, and extensive use.

顯影所使用之有機系溶劑中所含有之有機溶劑,只要為可溶解基材成份(A)(曝光前之基材成份(A))者即可,其可由公知之有機溶劑中,適當地選擇使用。具體而言,例如,酮系溶劑、酯系溶劑、腈系溶劑等極性溶劑等。酯系溶劑,以乙酸丁酯為佳。酮系溶劑,以甲基-n-戊基-酮(2-己酮)為佳。 The organic solvent contained in the organic solvent used for development may be any one of the well-known organic solvents as long as it can dissolve the substrate component (A) (base component (A) before exposure). use. Specifically, for example, a polar solvent such as a ketone solvent, an ester solvent or a nitrile solvent. The ester solvent is preferably butyl acetate. The ketone solvent is preferably methyl-n-pentyl-ketone (2-hexanone).

酮系溶劑為,結構中含有C-C(=O)-C之有機溶劑。酯系溶劑為,結構中含有C-C(=O)-O-C之有機溶劑。醇系溶劑為,結構中含有醇性羥基之有機溶劑,「醇性羥基」係指,脂肪族烴基的碳原子所鍵結之羥基之意。 醯胺系溶劑為結構中含有醯胺基之有機溶劑。醚系溶劑為結構中含有C-O-C之有機溶劑。有機溶劑之中,也存在有結構中含有複數種具有上述各溶劑之特徴的官能基的有機溶劑,該情形中,亦相當於包含該有機溶劑中所具有之官能基的任一溶劑種類。例如,二乙二醇單甲醚亦相當於上述分類中之醇系溶劑、醚系溶劑之任一者。又,烴系溶劑,係指由烴所形成,且不具有取代基(氫原子及烴基以外之基或原子)的烴溶劑。 The ketone solvent is an organic solvent containing C-C(=O)-C in the structure. The ester solvent is an organic solvent containing C-C(=O)-O-C in the structure. The alcohol solvent is an organic solvent having an alcoholic hydroxyl group in the structure, and the "alcoholic hydroxyl group" means the hydroxyl group to which the carbon atom of the aliphatic hydrocarbon group is bonded. The guanamine-based solvent is an organic solvent containing a guanamine group in the structure. The ether solvent is an organic solvent containing C-O-C in the structure. Among the organic solvents, there are also organic solvents having a plurality of functional groups having the characteristics of each of the above solvents, and in this case, they are equivalent to any solvent type including a functional group contained in the organic solvent. For example, diethylene glycol monomethyl ether is equivalent to any of an alcohol solvent and an ether solvent in the above classification. Further, the hydrocarbon solvent refers to a hydrocarbon solvent which is formed of a hydrocarbon and does not have a substituent (a hydrogen atom or a hydrocarbon group or a group other than a hydrocarbon group).

各溶劑之具體例中,酮系溶劑,例如,1-辛酮、2-辛酮、1-壬酮、2-壬酮、丙酮、4-庚酮、1-己酮、2-己酮、二異丁基酮、環己酮、甲基環己酮、苯基丙酮、甲基乙基酮、甲基異丁基酮、乙醯基丙酮、丙酮基丙酮、 紫羅蘭酮、二丙酮基醇、乙醯基卡必醇、苯乙酮、甲基萘基酮、異佛爾酮、伸丙基碳酸酯、γ-丁內酯、甲基-n-戊基-酮(2-己酮)等。 In a specific example of each solvent, a ketone solvent, for example, 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, Diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, ethyl acetonyl acetone, acetone acetone, Ionone, diacetone alcohol, acetyl carbitol, acetophenone, methylnaphthyl ketone, isophorone, propyl carbonate, γ-butyrolactone, methyl-n-pentyl- Ketone (2-hexanone) and the like.

酯系溶劑,例如,乙酸甲基、乙酸丁酯、乙酸乙酯、乙酸異丙基、乙酸戊基、乙酸異戊基、甲氧基乙酸乙酯、乙氧基乙酸乙酯、丙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、乙二醇單丙基醚乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單苯醚乙酸酯、二乙二醇單甲醚乙酸酯、二乙二醇單丙基醚乙酸酯、二乙二醇單乙醚乙酸酯、二乙二醇單苯醚乙酸酯、二乙二醇單丁基醚乙酸酯、二乙二醇單乙醚乙酸酯、2-甲氧基丁基乙酸酯、3-甲氧基丁基乙酸酯、4-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯、3-乙基-3-甲氧基丁基乙酸酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙基醚乙酸酯、2-乙氧基丁基乙酸酯、4-乙氧基丁基乙酸酯、4-丙氧基丁基乙酸酯、2-甲氧基戊基乙酸酯、3-甲氧基戊基乙酸酯、4-甲氧基戊基乙酸酯、2-甲基-3-甲氧基戊基乙酸酯、3-甲基-3-甲氧基戊基乙酸酯、3-甲基-4-甲氧基戊基乙酸酯、4-甲基-4-甲氧基戊基乙酸酯、丙二醇二乙酸酯、甲酸甲基、甲酸乙酯、甲酸丁基、甲酸丙基、乳酸乙酯、乳酸丁酯、乳酸丙基、碳酸乙酯、碳酸丙基、碳酸丁基、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙基、丙酮酸丁基、乙醯乙酸甲酯、乙醯乙酸乙酯、丙酸甲酯、丙酸乙酯、丙酸丙基、丙酸異丙基、2-羥基丙酸甲酯、2-羥基丙酸乙酯、甲基-3-甲氧基丙 酸酯、乙基-3-甲氧基丙酸酯、乙基-3-乙氧基丙酸酯、丙基-3-甲氧基丙酸酯等。 Ester solvent, for example, methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxyacetate, propylene glycol monomethyl ether Acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol single Methyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate , diethylene glycol monoethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3 -methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4-propoxybutyl acetate, 2-methoxypentyl acetate, 3-methoxypentyl Acetyl acetate, 4-methoxypentyl acetate, 2-methyl-3-methoxypentyl acetate, 3- 3-methoxypentyl acetate, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxypentyl acetate, propylene glycol diacetate , methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, lactic acid propyl, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyruvate, ethyl pyruvate , pyruvic acid propyl, pyruvic acid butyl, ethyl acetate methyl acetate, ethyl acetate ethyl acetate, methyl propionate, ethyl propionate, propionic acid propyl, propionic acid isopropyl, 2-hydroxypropionic acid Ester, ethyl 2-hydroxypropionate, methyl-3-methoxypropane Acid ester, ethyl-3-methoxypropionate, ethyl-3-ethoxypropionate, propyl-3-methoxypropionate, and the like.

腈系溶劑,例如,乙腈、丙腈、戊腈、丁腈等。 A nitrile solvent such as acetonitrile, propionitrile, valeronitrile, butyronitrile or the like.

有機系顯影液中,可配合必要性添加公知之添加劑。該添加劑例如界面活性劑等例示。界面活性劑,例如,與前述為相同之內容,又以非離子性之界面活性劑為佳,以氟系界面活性劑或矽系界面活性劑為較佳。 In the organic developer, a known additive may be added in accordance with necessity. This additive is exemplified, for example, as a surfactant. The surfactant is preferably the same as described above, and a nonionic surfactant is preferred, and a fluorine-based surfactant or a quinone-based surfactant is preferred.

使用有機系顯影液之顯影處理,可以公知之顯影方法予以實施,該方法例如將支撐體浸漬於顯影液中維持一定時間之方法(DIP法)、使顯影液以表面張力覆蓋支撐體表面,並靜置一定時間之方法(PUDDLE法)、將顯影液對支撐體表面進行噴霧之方法(SPRAY法)、於以一定速度迴轉之支撐體上,使顯影液塗出噴嘴依一定速度掃瞄下,將顯影液塗出附著之方法(Dynamic Dispense法)等。 The development treatment using an organic developer can be carried out by a known development method, for example, a method in which a support is immersed in a developer for a certain period of time (DIP method), and the developer is covered with a surface tension to cover the surface of the support, and The method of standing for a certain period of time (PUDDLE method), spraying the developer on the surface of the support (SPRAY method), and rotating the developer on the support at a constant speed to scan the developer at a constant speed. A method of applying a developer solution (Dynamic Dispense method) or the like.

於上述顯影處理之後、進行乾燥之前,可使用含有有機溶劑之洗滌液進行洗滌處理。經洗滌後,即可形成良好之圖型。 After the above development treatment and before drying, the washing treatment may be carried out using a washing liquid containing an organic solvent. After washing, a good pattern can be formed.

洗滌液所使用之有機溶劑,例如可由前述被列舉作為有機系顯影液所使用之有機溶劑的有機溶劑之中,不易溶解光阻圖型之溶劑中,適當地選擇使用。通常為使用由烴系溶劑、酮系溶劑、酯系溶劑、醇系溶劑、醯胺系溶劑及醚系溶劑所選出之至少1種類的溶劑。該些之中,又以由烴系溶劑、酮系溶劑、酯系溶劑、醇系溶劑及醯胺系溶劑所選出之至少1種類為佳,以由醇系溶劑及酯系溶劑所選 出之至少1種類為更佳,以醇系溶劑為特佳。 The organic solvent to be used for the washing liquid is, for example, an organic solvent which is exemplified as the organic solvent used in the organic developing solution, and is not easily dissolved in the solvent of the resist pattern, and is appropriately selected and used. Usually, at least one type of solvent selected from a hydrocarbon solvent, a ketone solvent, an ester solvent, an alcohol solvent, a guanamine solvent, and an ether solvent is used. Among these, at least one selected from the group consisting of a hydrocarbon solvent, a ketone solvent, an ester solvent, an alcohol solvent, and a guanamine solvent is preferred, and is selected from an alcohol solvent and an ester solvent. At least one type is more preferable, and an alcohol solvent is particularly preferable.

洗滌液所使用之醇系溶劑,以碳數6~8之一元醇為佳,該一元醇可為直鏈狀、支鏈狀、環狀之任一者。具體而言,例如,1-己醇、1-庚醇、1-辛醇、2-己醇、2-庚醇、2-辛醇、3-己醇、3-庚醇、3-辛醇、4-辛醇、苄基醇等。該些之中,又以1-己醇、2-庚醇、2-己醇為佳,以1-己醇或2-己醇為較佳。 The alcohol solvent used in the washing liquid is preferably a carbon number of 6 to 8 monohydric alcohol, and the monohydric alcohol may be linear, branched or cyclic. Specifically, for example, 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol , 4-octanol, benzyl alcohol, and the like. Among them, 1-hexanol, 2-heptanol and 2-hexanol are preferred, and 1-hexanol or 2-hexanol is preferred.

該些之有機溶劑中,可將其中之任一種單獨使用亦可,或將2種以上混合使用亦可。又,亦可與上述以外的有機溶劑或水混合使用。其中,於考慮顯影特性時,洗滌液中之水的添加量,相對於洗滌液之全量,以30質量%以下為佳,以10質量%以下為較佳,以5質量%以下為更佳,以3質量%以下為特佳。 Any of these organic solvents may be used singly or in combination of two or more. Further, it may be used in combination with an organic solvent or water other than the above. In addition, when the development property is considered, the amount of water to be added to the washing liquid is preferably 30% by mass or less, more preferably 10% by mass or less, and most preferably 5% by mass or less, based on the total amount of the washing liquid. It is particularly preferable to be 3% by mass or less.

洗滌液中,可配合必要性添加公知之添加劑。該添加劑例如界面活性劑等例示。界面活性劑,例如,與前述為相同之內容,又以非離子性之界面活性劑為佳,以氟系界面活性劑或矽系界面活性劑為較佳。 In the washing liquid, a known additive may be added in accordance with necessity. This additive is exemplified, for example, as a surfactant. The surfactant is preferably the same as described above, and a nonionic surfactant is preferred, and a fluorine-based surfactant or a quinone-based surfactant is preferred.

添加界面活性劑之情形,其添加量,相對於洗滌液之全量,通常為0.001~5質量%,以0.005~2質量%為佳,以0.01~0.5質量%為較佳。 In the case where a surfactant is added, the amount thereof is usually 0.001 to 5% by mass based on the total amount of the washing liquid, preferably 0.005 to 2% by mass, and preferably 0.01 to 0.5% by mass.

使用洗滌液之洗滌處理(洗淨處理),可使用公知之洗滌方法予以實施,該方法例如於以一定速度迴轉之支撐體上,將洗滌液塗出附著之方法(迴轉塗佈法)、將支撐體浸漬於洗滌液中浸漬一定時間之方法(DIP法)、將洗滌液噴 霧於支撐體表面之方法(SPRAY法)等。 The washing treatment (washing treatment) using the washing liquid can be carried out by a known washing method, for example, a method of coating the washing liquid on a support which is rotated at a constant speed (rotary coating method), The support is immersed in the washing liquid for a certain period of time (DIP method), and the washing liquid is sprayed A method of fogging on the surface of a support (SPRAY method) or the like.

本發明之光阻組成物中,含有(D0)成份時,可使感度及圖型形狀更為優良。該理由雖仍未確定,但推測應為萘基之特定位置上,介由硫原子鍵結烷基所得結構所形成之效果。 When the (D0) component is contained in the photoresist composition of the present invention, the sensitivity and the shape of the pattern can be further improved. Although this reason has not yet been determined, it is presumed that it is an effect formed by a structure obtained by bonding an alkyl group via a sulfur atom at a specific position of a naphthyl group.

以下,將以實施例對本發明作更具體之說明,但本發明並不受以下之實施例所限定。 Hereinafter, the present invention will be more specifically described by the examples, but the present invention is not limited by the following examples.

[化合物(B)-1之合成例] [Synthesis Example of Compound (B)-1]

下述化合物(B)-1(1-(2,7-二-n-丁氧基萘基)二-n-丁基鋶二(1,1,2,2,3,3,4,4,4-九氟基-n-丁烷碸)醯亞胺)為依下述之方法所製得。 The following compound (B)-1 (1-(2,7-di-n-butoxynaphthyl)di-n-butylindole II (1,1,2,2,3,3,4,4) , 4-nonafluoro-n-butane oxime) quinone imine) was obtained by the following method.

操作1 Operation 1

將五氧化二磷(1.7g),及甲烷磺酸(11.5g)加入反應容器中。又,再加入2,7-二-n-丁氧基萘(8.2g)、二-n-丁基亞 碸(6.3g),於室溫下攪拌16小時。反應容器內之溫度於保持0~10℃中,滴入20%NaOH水溶液(30g)後,加入二氯甲烷(80g),靜置後使其分層,去除水層後,得有機層。 使用去離子水(30g)洗淨所得有機層之後,靜置使其分層,去除水層後,得縮合反應物之反應溶液。 Phosphorus pentoxide (1.7 g) and methanesulfonic acid (11.5 g) were added to the reaction vessel. Further, 2,7-di-n-butoxynaphthalene (8.2 g) and di-n-butylene were further added. 碸 (6.3 g) was stirred at room temperature for 16 hours. The temperature in the reaction vessel was maintained at 0 to 10 ° C, and a 20% aqueous NaOH solution (30 g) was added dropwise thereto, and dichloromethane (80 g) was added thereto, and the mixture was allowed to stand for stratification, and the aqueous layer was removed to obtain an organic layer. After the obtained organic layer was washed with deionized water (30 g), the mixture was allowed to stand for stratification, and the aqueous layer was removed to obtain a reaction solution of the condensation reaction product.

操作2 Operation 2

將去離子水(30g),及、雙(九氟基-n-丁烷碸)醯亞胺鉀鹽(18.6g)加入其他反應容器中,隨後將上述操作1所得反應溶液全量加入其中,於室溫下攪拌20分鐘後,過濾不溶物。將所得反應溶液靜置、分層,去除水層後,得有機層。 Deionized water (30g), and bis(nonafluoro-n-butane oxime) quinone imide potassium salt (18.6g) were added to other reaction vessels, and then the reaction solution obtained in the above operation 1 was added in its entirety. After stirring at room temperature for 20 minutes, the insoluble material was filtered. The obtained reaction solution was allowed to stand, layered, and the aqueous layer was removed to obtain an organic layer.

操作3 Operation 3

將上述有機層2所得有機層中餾除二氯甲烷,所得濃縮物中,於50℃下加入甲基tert-丁基醚(以下,簡稱MTBE)(17g)與己烷(34g)後,使其晶析,得下述化合物(B)-1的白色結晶18.8g。 Dichloromethane was distilled off from the organic layer obtained in the above organic layer 2, and methyl tert-butyl ether (hereinafter, abbreviated as MTBE) (17 g) and hexane (34 g) were added at 50 ° C to obtain The crystallization was carried out to obtain 18.8 g of a white crystal of the compound (B)-1 below.

對所得下述化合物(B)-1之白色結晶,使用1H-NMR及LC-MS的下述分析結果,確認具有下述結構。 The white crystals of the following compound (B)-1 were obtained by the following analysis of 1 H-NMR and LC-MS.

1H-NMR(400MHz,DMSO-d6,內部標準物質:四甲基矽烷):δ(ppm)0.82(t,J=7.3Hz,6H),0.97(t,J=7.3Hz,3H),1.00(t,J=7.3Hz,3H),1.30-1.65(m,12H),1.74-1.96(m,4H),3.81-4.04(m,4H),4.18(t, J=6.6Hz,2H),4.44(t,J=6.6Hz,2H),7.24(dd,J=2.2 and 9.0Hz,1H),7.50(d,J=2.2Hz,1H),7.57(d,J=9.0Hz,1H),8.01(d,J=9.0Hz,1H),8.36(d,J=9.0Hz,1H) 1 H-NMR (400MHz, DMSO -d 6, internal standard substance: tetramethyl silane-): δ (ppm) 0.82 ( t, J = 7.3Hz, 6H), 0.97 (t, J = 7.3Hz, 3H), 1.00 (t, J = 7.3 Hz, 3H), 1.30 - 1.65 (m, 12H), 1.74-1.96 (m, 4H), 3.81-4.04 (m, 4H), 4.18 (t, J = 6.6 Hz, 2H) , 4.44 (t, J = 6.6 Hz, 2H), 7.24 (dd, J = 2.2 and 9.0 Hz, 1H), 7.50 (d, J = 2.2 Hz, 1H), 7.57 (d, J = 9.0 Hz, 1H) , 8.01 (d, J = 9.0 Hz, 1H), 8.36 (d, J = 9.0 Hz, 1H)

MS(LC/ESI(+)Spectrum):M+417 MS (LC/ESI(+)Spectrum): M + 417

MS(LC/ESI(-)Spectrum):M-580 MS (LC/ESI(-)Spectrum): M - 580

[化合物(D0)-1之合成例] [Synthesis Example of Compound (D0)-1]

下述化合物(D0-1)(1-(2,7-二-n-丁氧基萘基)二-n-丁基鋶(1S,4R)-7,7-二甲基-2-氧雜雙環[2.2.1]庚烷-1-基甲烷磺酸酯)為依下述之方法所製得。 The following compound (D0-1) (1-(2,7-di-n-butoxynaphthyl)di-n-butylindole (1S,4R)-7,7-dimethyl-2-oxo Heterobicyclo[2.2.1]heptan-1-ylmethanesulfonate) was prepared according to the method described below.

操作1 Operation 1

將五氧化二磷(3.41g)、甲烷磺酸(23.07g)加入反應容器中。隨後,加入2,7-二-n-丁氧基萘(16.34g),及二-n-丁基亞碸(12.66g),於室溫下攪拌16小時。使反應容器內之溫度於保持0~10℃中,加入去離子水(100g),滴入20%NaOH水溶液(80g)。滴下後,加入二氯甲烷(80g),靜 置、分層後,去除水層。所得有機層使用去離子水(60g)洗淨之後,經分層、去除水層,得縮合反應產物之反應溶液。 Phosphorus pentoxide (3.41 g) and methanesulfonic acid (23.07 g) were added to the reaction vessel. Subsequently, 2,7-di-n-butoxynaphthalene (16.34 g) and di-n-butylhydrazine (12.66 g) were added, and stirred at room temperature for 16 hours. The temperature in the reaction vessel was maintained at 0 to 10 ° C, deionized water (100 g) was added, and a 20% aqueous NaOH solution (80 g) was added dropwise. After dropping, add dichloromethane (80 g), and let stand. After setting and stratification, the water layer is removed. After the obtained organic layer was washed with deionized water (60 g), the aqueous layer was separated, and the reaction mixture of the condensation reaction product was obtained.

操作2 Operation 2

將去離子水(70g)、(1S,4R)-7,7-二甲基-2-氧雜雙環[2.2.1]庚烷-1-基甲烷磺酸(13.94g),及氫氧化鈉(2.4g)加入其他反應容器中,加入前述縮合反應產物之反應溶液全量,於室溫下攪拌20分鐘。將反應溶液靜置、分層、去除水層後,得有機層。 Deionized water (70 g), (1S, 4R)-7,7-dimethyl-2-oxabicyclo[2.2.1]heptan-1-ylmethanesulfonic acid (13.94 g), and sodium hydroxide (2.4 g) was placed in another reaction vessel, and the total amount of the reaction solution of the above condensation reaction product was added, and the mixture was stirred at room temperature for 20 minutes. The reaction solution was allowed to stand, layered, and the aqueous layer was removed to obtain an organic layer.

操作3 Operation 3

再於其他反應容器中,加入去離子水(70g)、(1S,4R)-7,7-二甲基-2-氧雜雙環[2.2.1]庚烷-1-基甲烷磺酸(0.70g),及氫氧化鈉(0.12g),再加入上述操作2所得有機層之全量,於室溫下攪拌20分鐘。將所得反應溶液靜置、分層,去除水層後,得有機層。 In a separate reaction vessel, deionized water (70 g), (1S, 4R)-7,7-dimethyl-2-oxabicyclo[2.2.1]heptan-1-ylmethanesulfonic acid (0.70) was added. g), and sodium hydroxide (0.12 g), the total amount of the organic layer obtained in the above operation 2 was further added and stirred at room temperature for 20 minutes. The obtained reaction solution was allowed to stand, layered, and the aqueous layer was removed to obtain an organic layer.

操作4 Operation 4

過濾上述操作3所得有機層,以去離子水洗淨後,分取有機層。由此有機層餾除二氯甲烷,所得濃縮物中,於50℃下加入t-丁基甲醚(MTBE)(156g)使其晶析結果,得化合物(D0)-1 35.05g。 The organic layer obtained in the above operation 3 was filtered, washed with deionized water, and then the organic layer was separated. Dichloromethane was distilled off from the organic layer, and the obtained concentrate was added to t-butyl methyl ether (MTBE) (156 g) at 50 ° C to give crystals of the compound (D0)-1 to 35.05 g.

上述操作1~4所得白色結晶,為前述通式(1) 中之R1、R2、R3、R4為n-丁基,X-為(1S,4R)-7,7-二甲基-2-氧雜雙環[2.2.1]庚烷-1-基甲烷磺酸酯之化合物之結果,為使用1H-NMR及LC-MS的下述分析結果而確認。 The white crystal obtained in the above operation 1 to 4 is that R 1 , R 2 , R 3 and R 4 in the above formula (1) are n-butyl group, and X - is (1S, 4R)-7,7-dimethyl group. The result of the compound of the keto-2-oxabicyclo[2.2.1]heptan-1-ylmethanesulfonate was confirmed by the following analysis results using 1 H-NMR and LC-MS.

1H-NMR(400MHz,DMSO-d6,內部標準物質:四甲基矽烷):δ(ppm)0.75(s,3H),0.82(t,J=7.3Hz,6H),0.97(t,J=7.3Hz,3H),1.00(t,J=7.3Hz,3H),1.07(s,3H),1.22-1.66(m,14H),1.74-1.98(m,7H),2.24(m,1H),2.38(d,J=14.6Hz,1H),2.73(m,1H),2.89(d,J=14.6Hz,1H),3.84-4.04(m,4H),4.18(t,J=6.5Hz,2H),4.45(t,J=6.5Hz,2H),7.24(dd,J=2.2 and 9.0Hz,1H),7.52(d,J=2.2Hz,1H),7.59(d,J=9.3Hz,1H),8.02(d,J=9.0Hz,1H),8.38(d,J=9.3Hz,1H) 1 H-NMR (400MHz, DMSO -d 6, internal standard substance: tetramethyl silane-): δ (ppm) 0.75 ( s, 3H), 0.82 (t, J = 7.3Hz, 6H), 0.97 (t, J = 7.3 Hz, 3H), 1.00 (t, J = 7.3 Hz, 3H), 1.07 (s, 3H), 1.22-1.66 (m, 14H), 1.74-1.98 (m, 7H), 2.24 (m, 1H) , 2.38 (d, J = 14.6 Hz, 1H), 2.73 (m, 1H), 2.89 (d, J = 14.6 Hz, 1H), 3.84 - 4.04 (m, 4H), 4.18 (t, J = 6.5 Hz, 2H), 4.45 (t, J = 6.5 Hz, 2H), 7.24 (dd, J = 2.2 and 9.0 Hz, 1H), 7.52 (d, J = 2.2 Hz, 1H), 7.59 (d, J = 9.3 Hz, 1H), 8.02 (d, J = 9.0 Hz, 1H), 8.38 (d, J = 9.3 Hz, 1H)

MS(LC/ESI(+)Spectrum):M+417 MS (LC/ESI(+)Spectrum): M + 417

MS(LC/ESI(-)Spectrum):M-231 MS (LC/ESI(-)Spectrum): M - 231

[光阻組成物之製作] [Production of photoresist composition]

製作添加有表1所示添加比例之各成份所得之厚膜用正型光阻組成物(實施例1、參考例1~2)。 A positive-type photoresist composition for a thick film obtained by adding each component of the addition ratio shown in Table 1 was prepared (Example 1, Reference Examples 1 and 2).

隨後,使其均勻地溶解,通過孔徑1μm之膜式過濾器予以過濾,製得固形成份質量濃度30~60質量%的厚膜用正型光阻組成物。 Subsequently, it was uniformly dissolved, and filtered through a membrane filter having a pore size of 1 μm to obtain a positive-type photoresist composition for a thick film having a solid content concentration of 30 to 60% by mass.

表1中,各記號分別具有以下之意義,[ ]內之數值為添加量(質量份)。 In Table 1, each symbol has the following meaning, and the numerical value in [ ] is the addition amount (parts by mass).

.(A)-1;下述式(1)(l/m/n/o=45/35/10/10)(分子量20萬)所表示之化合物12.5質量份與下述式(2)(l/m/n/o/p=25/20/5/10/40)(分子量5萬)所表示之化合物25質量份之混合樹脂 . (A)-1; 12.5 parts by mass of the compound represented by the following formula (1) (l/m/n/o=45/35/10/10) (molecular weight: 200,000) and the following formula (2) (l /m/n/o/p=25/20/5/10/40) (molecular weight 50,000) compound 25 parts by mass of mixed resin

.(C)-1;酚醛清漆樹脂(m/p-甲酚=6/4與甲醛及於酸觸媒之存在下進行加成縮合所得之酚醛清漆樹脂 分子量2萬)52.5質量份、聚羥基苯乙烯樹脂之下述式(3)(l/m=85/15)10質量份 . (C)-1; novolac resin (m/p-cresol=6/4 with formaldehyde and addition condensed resin in the presence of acid catalyst, the molecular weight of the novolac resin is 20,000) 52.5 parts by mass, polyhydroxybenzene The following formula (3) (l/m = 85/15) of the vinyl resin is 10 parts by mass.

.(B)-1;化合物(B)-1。 . (B)-1; Compound (B)-1.

.(4);下述式(4)所表示之化合物。 . (4) A compound represented by the following formula (4).

.(D0)-1;化合物(D0)-1。 . (D0)-1; Compound (D0)-1.

.(D0)-2;三-n-戊基胺。 . (D0)-2; tri-n-pentylamine.

.(E)-1;水楊酸。 . (E)-1; salicylic acid.

.(S)-1;PGMEA/3-甲氧基丁基乙酸酯(質量比40/60)之混合溶劑。 . (S)-1; a mixed solvent of PGMEA/3-methoxybutyl acetate (mass ratio 40/60).

<光阻圖型之形成> <Formation of photoresist pattern> (實施例1,及參考例1~2) (Example 1, and Reference Examples 1 to 2)

將依上述方式所得各實施例及各參考例之厚膜用正型光阻組成物,使用旋轉塗佈器塗佈於8英吋之銅基板上,使所塗佈之光阻組成物乾燥,得具有約50μm膜厚的厚膜光阻層。其次,將此厚膜光阻層載置於熱板上,進行140℃、5分鐘之預燒焙。 The positive-type photoresist composition for a thick film obtained in each of the above examples and the respective reference examples was applied onto a copper substrate of 8 inches using a spin coater to dry the applied photoresist composition. A thick film photoresist layer having a film thickness of about 50 μm is obtained. Next, the thick film photoresist layer was placed on a hot plate and prebaked at 140 ° C for 5 minutes.

預燒焙後,使用曝光裝置NSR-i14E(Nikon公 司製、NA:0.54、σ:0.59)進行曝光。其次,將其載置於熱板上,以85℃進行3分鐘之曝光後加熱(PEB)。隨後,將2.38%氫氧化四甲基銨(TMAH)水溶液滴下於厚膜光阻層,於23℃下放置60秒鐘,將其重複四次進行顯影。隨後,使用流水洗淨,以氮氣吹拂後得到具有100μm之線路與空間圖型的厚膜光阻圖型,以及大面積(10000μm2)圖型。 After the prebaking, exposure was performed using an exposure apparatus NSR-i14E (manufactured by Nikon Corporation, NA: 0.54, σ: 0.59). Next, it was placed on a hot plate and exposed to light (PEB) at 85 ° C for 3 minutes. Subsequently, a 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH) was dropped on the thick film photoresist layer, left at 23 ° C for 60 seconds, and this was repeated four times for development. Subsequently, it was washed with running water, and was blown with nitrogen to obtain a thick film resist pattern having a line and space pattern of 100 μm, and a large area (10000 μm 2 ) pattern.

測定大面積圖型之光阻膜消失為止之最小曝光量作為Eth(mJ/cm2)。其結果係如表2所示。 The minimum exposure amount until the photoresist film of the large-area pattern disappeared was measured as Eth (mJ/cm 2 ). The results are shown in Table 2.

[光阻圖型形狀之評估] [Evaluation of the shape of the photoresist pattern]

使用掃瞄型電子顯微鏡(商品名:SU-8000、日立高科技公司製)觀察依前述<厚膜光阻圖型之形成>所形成之LS圖型的截面形狀,並依下述評估基準評估該形狀。其結果,形成如表2所示之10μm L/S形狀。 The cross-sectional shape of the LS pattern formed by the formation of the above-mentioned <thick film photoresist pattern> was observed using a scanning electron microscope (trade name: SU-8000, manufactured by Hitachi High-Technologies Corporation), and evaluated according to the following evaluation criteria. The shape. As a result, a 10 μm L/S shape as shown in Table 2 was formed.

◎:垂直且頭部形狀良好 ◎: Vertical and good head shape

○:圖型略顯出中段較細,頭部形狀良好 ○: The pattern is slightly thinner and the head shape is good.

×:圖型顯出中段細小,頭部形狀形成圓型 ×: The pattern shows a small middle section, and the head shape is rounded.

由上述結果得知,實施例1之光阻組成物,與參考例1~2之光阻組成物相比較時,確認具有更良好之感度,且圖型形狀亦為良好。 From the above results, it was found that when the photoresist composition of Example 1 was compared with the photoresist compositions of Reference Examples 1 and 2, it was confirmed that the photoresist composition had a better sensitivity and the pattern shape was also good.

Claims (4)

一種光阻組成物,其為經由曝光而產生酸,經由酸的作用而對顯影液之溶解性產生變化之光阻組成物,其係含有經由酸的作用而對顯影液之溶解性產生變化之樹脂成份(A),與光反應性抑制劑(D0)所組成,其特徵為,前述光反應性抑制劑(D0)為含有下述通式(d0)所表示之化合物(D0-1), [式中,R1、R2為可具有取代基之碳數1~10之烷基,R3、R4為可具有取代基之碳數2~10之鏈狀烷基,X-為對陰離子],其中,前述X-為下述通式(d1-1)~(d1-3)之任一者所表示之陰離子, [式(d1-1)~(d1-3)中,Rd1~Rd4為可具有取代基之環式基、可具有取代基之鏈狀烷基,或可具有取代基之鏈狀之烯基;但,式(d1-2)中之Rd2中,S原子所鄰接之碳原子 為不鍵結氟原子者;Yd1為單鍵,或2價之連結基]。 A photoresist composition which is an optically resistive composition which generates an acid by exposure and which changes the solubility of a developing solution by an action of an acid, and changes the solubility of the developing solution by the action of an acid. The resin component (A) is composed of a photoreactive inhibitor (D0), and the photoreactive inhibitor (D0) is a compound (D0-1) represented by the following formula (d0). [wherein, R 1 and R 2 are an alkyl group having 1 to 10 carbon atoms which may have a substituent, and R 3 and R 4 are a chain alkyl group having 2 to 10 carbon atoms which may have a substituent, and X - is a pair An anion], wherein the X - is an anion represented by any one of the following formulas (d1-1) to (d1-3), [In the formulae (d1-1) to (d1-3), Rd 1 to Rd 4 are a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain olefin which may have a substituent However, in the Rd 2 in the formula (d1-2), the carbon atom adjacent to the S atom is a fluorine atom not bonded; Yd 1 is a single bond or a divalent linking group]. 如請求項1之光阻組成物,其尚含有經由曝光而產生酸之酸產生劑成份(B)。 The photoresist composition of claim 1, which further comprises an acid generator component (B) which generates an acid by exposure. 如請求項1之光阻組成物,其中,前述樹脂成份(A)為含有由酚醛清漆樹脂、聚羥基苯乙烯樹脂,及丙烯酸樹脂所成群所選出之至少一種的樹脂。 The photoresist composition of claim 1, wherein the resin component (A) is a resin containing at least one selected from the group consisting of a novolak resin, a polyhydroxystyrene resin, and an acrylic resin. 一種光阻圖型之形成方法,其特徵為,包含於支撐體上,使用請求項1之光阻組成物形成光阻膜之步驟、使前述光阻膜曝光之步驟,及使前述光阻膜顯影以形成光阻圖型之步驟。 A method for forming a photoresist pattern, comprising: a step of forming a photoresist film using the photoresist composition of claim 1; a step of exposing the photoresist film, and a photoresist film formed on the support The step of developing to form a photoresist pattern.
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