TWI585437B - Composite optical sensor for small aperture and its preparation method - Google Patents

Composite optical sensor for small aperture and its preparation method Download PDF

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TWI585437B
TWI585437B TW105109956A TW105109956A TWI585437B TW I585437 B TWI585437 B TW I585437B TW 105109956 A TW105109956 A TW 105109956A TW 105109956 A TW105109956 A TW 105109956A TW I585437 B TWI585437 B TW I585437B
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ambient light
integrated circuit
chip
substrate
light sensing
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Ting-Yi Chen
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/0204Compact construction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/0214Constructional arrangements for removing stray light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/08Arrangements of light sources specially adapted for photometry standard sources, also using luminescent or radioactive material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/10Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/16Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
    • G01J1/1626Arrangements with two photodetectors, the signals of which are compared
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4204Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04Systems determining the presence of a target
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481Constructional features, e.g. arrangements of optical elements
    • G01S7/4811Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813Housing arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14678Contact-type imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • HELECTRICITY
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    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
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    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

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Description

適用於小孔徑之複合型光學感測器及其製法
本發明係有關一種適用於小孔徑之複合型光學感測器及其製法,其不僅設製開孔為圓形孔,在智慧型手持行動裝置之外觀上呈現較短之小孔徑,也能俾達近接感測器之近接感測角度極小化、環境光感測器之環境光感測角度極大化。
按,在智慧型手持行動裝置中(例如手機),常會搭配環境光感測器(Ambient Light Sensor,ALS)偵測環境光亮度,亦能使螢幕隨著環境光變化,而調節螢幕亮度,以增加使用時間,及近接感測器(Proximity Sensor,PS)與發光元件,亦可偵測物體靠近程度,當使用者的臉部靠近螢幕時,則螢幕的觸控功能會自動關閉,避免使用者在講電話的過程,而造成臉部誤觸螢幕,以增進人機間的互動性,再者,環境光線感測器與近接感測器皆為感測光線,能被整合至同一封裝結構,不僅可共享空間、耗材,也能合併電力供應的線路佈局。而上述之ALS及PS結構,一般是設在手機顯示面板的側邊,而手機表面為了因應不同型態的ALS及PS結構,必須設製開孔如圖1A所示之長形孔(G 1),或圖1B所示之圓形孔(G 2)。
次按,智慧型手持行動裝置之外觀設計逐漸受到消費者之重視,對於外觀設計上之開孔乃越小孔徑越好,但ALS及PS結構在應用上的考量不同,如發光元件與PS結構之間的近接感測角度越小越好,而ALS結構之環境光感測角度越大越好,若整合至同一封裝結構,則ALS結構與PS結構需一起對應開孔,因此,開孔在智慧型手持行動裝置之外觀上呈現小孔徑,並非簡單之事,如圖1A所示,其智慧型手持行動裝置(P)之開孔為長形孔(G 1),設計成較長之大孔徑(T 1),但為了符合消費者對外觀設計需求,逐漸將智慧型手持行動裝置(P)之開孔為圓形孔(G 2),設計成較短之小孔徑(T 2),如圖1B所示,不過,卻犧牲環境光感測器之環境光感測範圍。
如圖2所示,其乃為一種光學近接感測器封裝結構10,其ALS及PS結構係屬一種橫向配置型態,因此手機乃配合開孔為長形孔(G 1),屬於較長之大孔徑(T 1),其結構包含:一基板11;一紅外線發光二極體12(IR LED),係安裝於該基板11;一感測器13,係安裝於該基板11,並具有一近接感測單元131及環境光線感測單元132;以及該感測器13與該紅外線發光二極體12之間形成一障壁14,因此,該障壁14可防止該紅外線發光二極體12干擾該感測器13之近接感測單元131,當該紅外線發光二極體12自發光源經物體(O)反射後至該感測器13之近接感測單元131,形成近接感測角度(θ a1),與該感測器13之環境光線感測單元132預定環境光感測角度(θ b1)而接受環境光源(L),但該障壁14會阻擋該環境光線感測單元132之環境光感測範圍,使環境光感測角度(θ b1)不宜過大,且該近接感測單元131靠近該環境光線感測單元132左側,使近接感測角度(θ a1)不宜過小,因此,近接感測角度(θ a1)與環境光感測角度 (θ b1)相互配合皆為適中,此時,該發光元件12與該環境光線感測單元132、近接感測單元131之間距離較長,故設製開孔為長形孔(G 1),在智慧型手持行動裝置(P)之外觀上呈現較長之大孔徑(T 1)。
如圖3所示,其揭示在US Patent No.8,143,608,為一種層疊封裝光學近接感測器20,其ALS及PS結構亦屬一種橫向配置型態,因此手機配合開孔為長形孔(G 1),屬於較長之大孔徑(T 1),包括:一紅外光發射器211,安裝於一第一基板21上,且該第一基板21具有導線結合襯墊212;一光偵測器221、環境光感測器222,安裝於一第二基板22上,且該第二基板22具有導線結合襯墊223、224;以及一積體電路(圖未示),安裝於一第三基板23上並藉由一包覆成型複合物24予以囊封,該積體電路包括光發射器驅動、光偵測電路及環境光感測電路,該第三基板23進一步包括至少第一組、第二組及第三組電連接至該積體電路且未被該包覆成型複合物24覆蓋的導線結合襯墊231、232、233;其中該第一基板21及該第二基板22係安裝於該包覆成型複合物24上,該紅外光發射器211透過該第一基板21之導線結合襯墊212,以導線25經由該第一組導線結合襯墊231至該光發射器驅動電路,該光偵測器221、環境光感測器222透過該第二基板22之導線結合襯墊223、224,以導線25分別經由該第二及三組導線結合襯墊232、233至該光偵測電路、環境光感測電路;一第一模塑紅外光通過組件26可經塑形以包含透鏡261,並被配置於該紅外光發射器211之上並覆蓋該紅外光發射器211;一第二模塑紅外光通過組件27可經塑形以包含透鏡271,並被配置於該光偵測器221、環境光感測器222之上並覆蓋該光偵測器221、環境光感測器222,且一模塑紅外光截止組件(圖未示)被配置於該第三基板23之若干部份與該第一紅外光通過組件26及該第二紅外光通過組件27之間及之上,因此,該紅外光發射器211、光偵測器221分別安裝於該第一基板21、第二基板22,可防止該紅外光發射器211干擾該光偵測器221,當該紅外光發射器211自發光源經物體(O)反射後至該光偵測器221,形成近接感測角度(θ a2),與該環境光感測器預定環境光感測角度(θ b2)而接受環境光源(L),且無障壁讓該環境光感測器222之環境光感測範圍不會被阻擋,使環境光感測角度(θ b2)可變大,不過,該環境光感測器222係位於該紅外光發射器211與該光偵測器221之間,使近接感測角度(θ a2)無法變小仍為適中,此時,該紅外光發射器211與該光偵測器221之間距離無法縮短距離,故設製開孔為長形孔(G 1),在智慧型手持行動裝置(P)之外觀上仍呈現較長之大孔徑(T 1)。
如圖4示,其揭示在US Patent No.8,716,722,另一種光感測式晶片封裝結構30,其ALS及PS結構係設在一下凹槽內,因此有別於上述二種橫向配置型態,因此手機可配合開孔為圓形孔(G 2),屬於較短之小孔徑(T 2),其結構包含:一基板31,包含有一第一凹槽311、一第二凹槽312及一光線導引槽313,該基板31具有不透光性及底面含有銲墊38(Solder Pad),該第一凹槽311與該第二凹槽312之開放端方向相異,該光線導引槽313之一開放端與第一凹槽311之開放端同側,另一開放端連通至該第二凹槽312,且該第二凹槽312及光線導引槽313內各設有一光反射層34;一發光晶片32,其係設置於第一凹槽311內;以及一光學感測晶片33,其係設置於第二凹槽312內,並以金屬凸塊37覆固於該第二凹槽312內,該光學感測晶片33具有環境光線感測單元331與近接感測單元332,並以一第一封裝膠體35與一第二封裝膠體36,該第一封裝膠體35是填設於該第一凹槽311內且覆蓋該發光晶片32,該第二封裝膠體36是填設於該光線導引槽313內且覆蓋該光學感測晶片33,且該第一封裝膠體35與該第二封裝膠體36是透光材料,因此,該發光晶片32、該光學感測晶片33之環境光線感測單元331、近接感測單元332分別設置於該第一凹槽311、第二凹槽312,可防止該發光晶片32干擾光學感測晶片33之近接感測單元332,當該發光晶片32自發光源經物體(O)反射後,經由該光線導引槽313導引至該光學感測晶片33之近接感測單元332,形成近接感測角度(θ a3),與該光學感測晶片33之環境光感測器331預定環境光感測角度(θ b3),經由該光線導引槽313導引而接受環境光源(L),除此之外,該第一凹槽311與該第二凹槽312之間部分疊設,相對地,該光學感測晶片33之環境光感測器331、近接感測單元332與該發光晶片32之間可縮短距離,使近接感測角度(θ a3)、環境光感測角度(θ b3)皆變小,故設製開孔為圓形孔(G 2),在智慧型手持行動裝置(P)之外觀上呈現較短之小孔徑(T 2),但卻犧牲環境光感測器之環境光感測範圍。
此外,基於ALS及PS結構在應用上的考量不同,將PS結構與發光元件設成一模組,及ALS結構設成另一模組,並分別對應不同開孔,因此,設製不同開孔皆為圓形孔,分別在智慧型手持行動裝置之外觀上呈現小孔徑,雖外觀設計符合消費者需求,不過,兩個模組並非整合至同一封裝結構,相對地,體積較為龐大,而不易組裝至智慧型手持行動裝置(P)內,故容不贅述。
本發明人有鑑於該光學近接感測器封裝結構10、層疊封裝光學近接感測器20及光感測式晶片封裝結構30,乃構思一種適用於小孔徑之複合型光學感測器,不僅設製開孔為圓形孔(G 2),在智慧型手持行動裝置(P)之外觀上呈現較短之小孔徑(T 2),也能配合ALS及PS結構在應用上的考量不同,如發光元件(紅外線發光二極體12、紅外光發射器211、發光晶片32)與PS結構(近接感測單元131、光偵測器221、近接感測單元332)之間的近接感測角度越小越好,而ALS結構(環境光線感測單元132、環境光感測器222、環境光線感測單元331)之環境光感測角度越大越好,為本發明所欲解決的課題。
緣是,本發明之主要目的,係在提供一種適用於小孔徑之複合型光學感測器及其製法,其將ALS結構獨立成一個環境光感測晶片,並與PS結構為近接感測器之電路相互分離,令環境光感測晶片、近接感測器皆可縮短與發光元件的距離,不僅開孔為圓形孔,在智慧型手持行動裝置之外觀上呈現較短之小孔徑,也能俾達近接感測器之近接感測角度極小化、環境光感測器之環境光感測角度極大化。
為達上述目的,本發明採用之技術手段包含:一基板(Frame);一發光元件,係耦接於該基板上;一特殊應用集成電路晶片(Application Specific Integrated Circuit Die,ASIC Die),係耦接於該基板上,且該特殊應用集成電路晶片係嵌入一近接感測器(Proximity Sensor,PS),並在該特殊應用集成電路晶片與該發光元件之間係設有一障壁(Barrier);以及一環境光感測晶片(Ambient Light Sensor Die,ALS Die),該環境光感測晶片係先製造成型後,再耦接於該特殊應用集成電路晶片上,使其呈現獨立凸起於該特殊應用集成電路晶片上一預定高度之型態,且該環境光感測晶片未遮蔽該特殊應用集成電路晶片之近接感測器,據以形成一適用於小孔徑之複合型光學感測器;藉此,該發光元件自發光源經反射至該近接感測器,以一定高度之該障壁防止該發光元件自發光源干擾該近接感測器,而該環境光感測晶片之高度可配合該障壁之高度獨立製造成型,讓該環境光感測晶片之環境光感測範圍不被該障壁之高度所阻擋,俾使該近接感測器之近接感測角度極小化,及使該環境光感測器之環境光感測角度極大化。
依據前揭特徵,該環境光感測晶片可為環境光感測、或是三原色(RGB)感測晶片或紫外線(UV)感測晶片其中之一所構成。
依據前揭特徵,該發光元件可為發光二極體(LED) 、 雷射二極體(LD)或光垂直腔面發射激光器(Vertical Cavity Surface Emission Laser,VCSEL)其中之一所構成。
依據前揭特徵,該基板係可由陶瓷電路板或印刷電路板其中之一所構成,使該基板之內部形成相互連接之電性導線,令該特殊應用集成電路晶片與該發光元件相互耦接,且該特殊應用集成電路晶片具有複數個第一電性接觸點及該環境光感測晶片具有複數個第二電性接觸點,並以該第二電性接觸點係耦接至該第一電性接觸點,令該特殊應用集成電路晶片與該環境光感測晶片相互耦接。
依據前揭特徵,該基板之底面係可設有複數個銲墊(Solder Pad),該銲墊透過該基板之內部,與該特殊應用集成電路晶片、發光元件相互耦接,使該複合型光學感測器形成表面黏著元件(Surface Mount Devices,SMD)。
依據前揭特徵,該基板上更可包括複數個透明封裝體,該透明封裝體係各別封裝該環境光感測晶片、特殊應用集成電路晶片與該發光元件。
依據前揭特徵,該基板上更可包括一非透明封裝體,該非透明封裝體係封裝該障壁。
依據前揭特徵,該透明封裝體可為透鏡。
藉助上揭技術手段,其該環境光感測晶片呈現獨立凸起於該特殊應用集成電路晶片上一預定高度之型態,使該環境光感測器之環境光感測角度極大化,及該近接感測器被嵌入於該特殊應用集成電路晶片,使該近接感測器之近接感測角度極小化,進而具有相輔相成之效果,在不犧牲該環境光感測器之環境光感測範圍,該環境光感測晶片與該近接感測器能整合至同一結構,據以形成一適用於小孔徑之複合型光學感測器,故設製開孔為圓形孔,在智慧型手持行動裝置之外觀上呈現較短之小孔徑。
首先,請參閱圖5~圖9所示,本發明一種適用於小孔徑之複合型光學感測器40,尤指一種使近接感測角度(θ a4)極小化且使環境光感測角度(θ b4)極大化之光學感測器,較佳實施例包含:一基板41(Frame),本實施例中,該基板41係由陶瓷電路板或印刷電路板其中之一所構成,但不限定於此。
一發光元件42,係耦接於該基板41上,乃透過電性導線48進行電性連接,令該發光元件42與該基板41相互耦接,本實施例中,該發光元件42為發光二極體(LED)、雷射二極體(LD)或光垂直腔面發射激光器(Vertical Cavity Surface Emission Laser,VCSEL)其中之一所構成,但不限定於此。
一特殊應用集成電路晶片43(Application Specific Integrated Circuit Die,ASIC Die),係耦接於該基板41上,乃透過電性導線48進行電性連接,令該特殊應用集成電路晶片43與該基板41相互耦接,且該特殊應用集成電路晶片43係嵌入一近接感測器431(Proximity Sensor,PS),並在該特殊應用集成電路晶片43與該發光元件42之間係設有一障壁44(Barrier),本實施例中,該基板41之內部形成相互連接之電性導線,令該特殊應用集成電路晶片43與該發光元件42相互耦接,且該特殊應用集成電路晶片43具有複數個第一電性接觸點432及該環境光感測晶片45具有複數個第二電性接觸點451,並以該第二電性接觸點451係耦接至該第一電性接觸點432,乃透過電性導線48進行電性連接,令該特殊應用集成電路晶片43與該環境光感測晶片45相互耦接,但不限定於此。
一環境光感測晶片45(Ambient Light Sensor Die,ALS Die),該環境光感測晶片45係先製造成型後,再耦接於該特殊應用集成電路晶片43上,乃透過電性導線48進行電性連接,使其呈現獨立凸起於該特殊應用集成電路晶片43上一預定高度之型態,且該環境光感測晶片45未遮蔽該特殊應用集成電路晶片43之近接感測器431,據以形成一適用於小孔徑之複合型光學感測器40,本實施例中,該環境光感測晶片45亦可接收環境光,但不限定於此,該環境光感測晶片45更可為三原色(RGB)感測晶片或紫外線(UV)感測晶片其中之一所構成,亦可接收三原色、紫外線,因此,該環境光感測晶片45亦可接收環境光、三原色、紫外線。
如圖5、圖7A所示,其該環境光感測晶片45獨立凸起於該特殊應用集成電路晶片43之電路外,令該環境光感測晶片45製造成型至該特殊應用集成電路晶片43上,可適時調整與該障壁44的距離,使該特殊應用集成電路晶片43之電路免於變更,並配合圖6所示,其該基板41之底面係設有複數個銲墊411(Solder Pad),該銲墊411透過該基板41之內部,與該特殊應用集成電路晶片43、發光元件42相互耦接,使該複合型光學感測器40形成表面黏著元件(Surface Mount Devices, SMD),但不限定於此。
如圖7B所示之示意圖,其該基板41上更包括複數個透明封裝體46及一非透明封裝體47,該透明封裝體46係各別封裝該環境光感測晶片45、特殊應用集成電路晶片43與該發光元件42,及該非透明封裝體47係封裝該障壁44,在另一實施例中,該透明封裝體46為透鏡。
如圖8所示之使用狀態圖,其該發光元件42自發光源經 物體(O)反射至該近接感測器431,並以一定高度(h 1)之該障壁44防止該發光元件42自發光源干擾該近接感測器431,而該環境光感測晶片45之高度(h 2)可配合該障壁44之高度(h 1)獨立製造成型,當該環境光感測晶片45偵測環境光源(L)亮度,讓該環境光感測晶片45之環境光感測範圍不被該障壁44之高度(h 1)所阻擋,俾使該近接感測器之近接感測角度(θ a4)極小化,及使該環境光感測器之環境光感測角度(θ b4)極大化,故設製開孔為圓形孔(G 2),在智慧型手持行動裝置(P)之外觀上呈現較短之小孔徑(T 2),進一步,令該特殊應用集成電路晶片43可接收該自發光源及該環境光源(L)之光通量,並控制該環境光感測晶片45、發光元件42及近接感測器431之作動狀態。
進一步,為能清楚分析及說明習用先前技術A、B及C與本發明之開孔呈現孔徑大小、近接感測器之近接感測角度(θ a)、環境光感測器之環境光感測角度(θ b)的差異性,茲列表比較如後: <TABLE border="1" borderColor="#000000" width="_0001"><TBODY><tr><td>   </td><td> 先前技術A </td><td> 先前技術B </td><td> 先前技術C </td><td> 本發明 </td></tr><tr><td> 開孔呈現 孔徑大小 </td><td> 大 </td><td> 大   </td><td> 小 </td><td> 小 </td></tr><tr><td> 近接感測器之近接感測角度(θ<sub>a</sub>) </td><td> 中 </td><td> 中 </td><td> 小 </td><td> 小 </td></tr><tr><td> 環境光感測器之環境光感測角度(θ<sub>b</sub>) </td><td> 中 </td><td> 大     </td><td> 小 </td><td> 大 </td></tr></TBODY></TABLE>
如圖9所示,能清楚分析及說明本發明與先前技術比較環境光感測角度之角位移曲線圖,如下所述: (1).曲線A為先前技術光學近接感測器封裝結構之環境光感測角度之角位移曲線,其環境光感測角度不宜過大,且近接感測單元靠近環境光線感測單元左側,使近接感測角度不宜過小,因此,近接感測角度與環境光感測角度相互配合皆為適中,故設製開孔為長形孔,在智慧型手持行動裝置之外觀上無法呈現較短之小孔徑。 (2).曲線B為先前技術層疊封裝光學近接感測器之環境光感測角度之角位移曲線,其環境光感測角度可變大,而近接感測角度無法變小仍為適中,故設製開孔為長形孔,在智慧型手持行動裝置之外觀上無法呈現較短之小孔徑。 (3).曲線C先前技術光感測式晶片封裝結構之環境光感測角度之角位移曲線,其近接感測角度、環境光感測角度皆變小,雖設製開孔為圓形孔,在智慧型手持行動裝置之外觀上呈現較短之小孔徑,但卻犧牲環境光感測器之環境光感測範圍。 (4).曲線D為本發明複合型光學感測器40之環境光感測角度(θ b4)之角位移曲線,其使近接感測器之近接感測角度(θ a4)極小化,及使環境光感測器之環境光感測角度(θ b4)極大化,因此,曲線D之環境光感測角度(θ b4)大於曲線A、曲線C之環境光感測角度,並與曲線B之環境光感測角度接近重疊狀態,不僅設製開孔為圓形孔(G 2),在智慧型手持行動裝置(P)之外觀上呈現較短之小孔徑(T 2),也不需犧牲環境光感測器之環境光感測範圍。
綜上所述,本發明所揭示之技術手段,確具「新穎性」、 「進步性」及「可供產業利用」等發明專利要件,祈請  鈞局惠賜專利,以勵創作,無任德感。
惟,上述所揭露之圖式、說明,僅為本發明之較佳實施 例,大凡熟悉此項技藝人士,依本案精神範疇所作之修飾或等效變化,仍應包括在本案申請專利範圍內。
40‧‧‧複合型光學感測器
41‧‧‧基板
411‧‧‧銲墊
42‧‧‧發光元件
43‧‧‧特殊應用集成電路晶片
431‧‧‧近接感測器
432‧‧‧第一電性接觸點
44‧‧‧障壁
45‧‧‧環境光感測晶片
451‧‧‧第二電性接觸點
46‧‧‧透明封裝體
47‧‧‧非透明封裝體
48‧‧‧電性導線
O‧‧‧物體
L‧‧‧環境光線
G2‧‧‧圓形孔
T2‧‧‧小孔徑
P‧‧‧智慧型手持行動裝置
θa4‧‧‧近接感測角度
θb4‧‧‧環境光感測角度
h1‧‧‧障壁高度
h2‧‧‧環境光感測晶片高度
圖1A係先前技術開孔為長形孔之示意圖。 圖1B係先前技術開孔為圓形孔之示意圖。 圖2係先前技術光學近接感測器封裝結構之示意圖。 圖3係先前技術層疊封裝光學近接感測器之示意圖。 圖4係先前技術光感測式晶片封裝結構之示意圖。 圖5係本發明之俯視圖。 圖6係本發明之仰視圖。 圖7A係圖5中7A-7A之斷面剖視圖。 圖7B係本發明之示意圖。 圖8係本發明之使用狀態圖。 圖9係本發明與先前技術比較環境光感測角度之角位移曲線圖。
40‧‧‧複合型光學感測器
41‧‧‧基板
42‧‧‧發光元件
43‧‧‧特殊應用集成電路晶片
431‧‧‧近接感測器
432‧‧‧第一電性接觸點
44‧‧‧障壁
45‧‧‧環境光感測晶片
451‧‧‧第二電性接觸點
48‧‧‧電性導線

Claims (10)

  1. 一種適用於小孔徑之複合型光學感測器,其包含:      一基板(Frame);    一發光元件,係耦接於該基板上;    一特殊應用集成電路晶片(Application Specific Integrated Circuit Die,ASIC Die),係耦接於該基板上,且該特殊應用集成電路晶片係嵌入一近接感測器(Proximity Sensor,PS),並在該特殊應用集成電路晶片與該發光元件之間係設有一障壁(Barrier);以及    一環境光感測晶片(Ambient Light Sensor Die,ALS Die),該環境光感測晶片係先製造成型後,再耦接於該特殊應用集成電路晶片上,使其呈現獨立凸起於該特殊應用集成電路晶片上一預定高度之型態,且該環境光感測晶片未遮蔽該特殊應用集成電路晶片之近接感測器,據以形成一適用於小孔徑之複合型光學感測器;     藉此,該發光元件自發光源經反射至該近接感測器,以一定高度之該障壁防止該發光元件自發光源干擾該近接感測器,而該環境光感測晶片之高度可配合該障壁之高度獨立製造成型,讓該環境光感測晶片之環境光感測範圍不被該障壁之高度所阻擋,俾使該近接感測器之近接感測角度極小化,及使該環境光感測器之環境光感測角度極大化。
  2. 如申請專利範圍第1項所述之適用於小孔徑之複合型光學感測器,其中,該環境光感測晶片為環境光感測、或是三原色(RGB)感測晶片或紫外線(UV)感測晶片其中之一所構成。
  3. 如申請專利範圍第1項所述之適用於小孔徑之複合型光學感測器,其中,該發光元件為發光二極體(LED) 、雷射二極體(LD)或光垂直腔面發射激光器(Vertical Cavity Surface Emission Laser,VCSEL)其中之一所構成。
  4. 如申請專利範圍第1項所述之適用於小孔徑之複合型光學感測器,其中,該基板係由陶瓷電路板或印刷電路板其中之一所構成,使該基板之內部形成相互連接之電性導線,令該特殊應用集成電路晶片與該發光元件相互耦接,且該特殊應用集成電路晶片具有複數個第一電性接觸點及該環境光感測晶片具有複數個第二電性接觸點,並以該第二電性接觸點係耦接至該第一電性接觸點,令該特殊應用集成電路晶片與該環境光感測晶片相互耦接。
  5. 如申請專利範圍第4項所述之適用於小孔徑之複合型光學感測器,該基板之底面係設有複數個銲墊(Solder Pad),該銲墊透過該基板之內部,與該特殊應用集成電路晶片、發光元件相互耦接,使該複合型光學感測器形成表面黏著元件(Surface Mount Devices,SMD)。
  6. 如申請專利範圍第1項所述之適用於小孔徑之複合型光學感測器,其中,該基板上更包括複數個透明封裝體,該透明封裝體係各別封裝該環境光感測晶片、特殊應用集成電路晶片與該發光元件。
  7. 如申請專利範圍第1項所述之適用於小孔徑之複合型光學感測器,其中,該基板上更包括一非透明封裝體,該非透明封裝體係封裝該障壁。
  8. 如申請專利範圍第6項所述之適用於小孔徑之複合型光學感測器,其中,該透明封裝體為透鏡。
  9. 一種用以製造申請專利範圍第1項所述之適用於小孔徑之複合型光學感測器之製法,包括有下列步驟:    a).提供一基板(Frame);    b).提供一發光元件耦接於該基板上;    c).提供一特殊應用集成電路晶片(Application Specific Integrated Circuit Die,ASIC Die)耦接於該基板上,且該特殊應用集成電路晶片係嵌入一近接感測器(Proximity Sensor,PS),並在該特殊應用集成電路晶片與該發光元件之間係設有一障壁(Barrier);以及    d).提供一環境光感測晶片(Ambient Light Sensor Die,ALS Die),該環境光感測晶片係先製造成型後,再耦接於該特殊應用集成電路晶片上,使其呈現獨立凸起於該特殊應用集成電路晶片上一預定高度之型態,且該環境光感測晶片未遮蔽該特殊應用集成電路晶片之近接感測器,據以形成一適用於小孔徑之複合型光學感測器;藉此,該發光元件自發光源經反射至該近接感測器,以一定高度之該障壁防止該發光元件自發光源干擾該近接感測器,而該環境光感測晶片之高度可配合該障壁之高度獨立製造成型,讓該環境光感測晶片之環境光感測範圍不被該障壁之高度所阻擋,俾使該近接感測器之近接感測角度極小化,及使該環境光感測器之環境光感測角度極大化。
  10. 如申請專利範圍第9項所述之適用於小孔徑之複合型光學感測器之製法,其中,該基板係由陶瓷電路板或印刷電路板其中之一所構成,使該基板之內部形成相互連接之電性導線,令該特殊應用集成電路晶片與該發光元件相互耦接,且該特殊應用集成電路晶片具有複數個第一電性接觸點及該環境光感測晶片具有複數個第二電性接觸點,並以該第二電性接觸點係耦接至該第一電性接觸點,令該特殊應用集成電路晶片與該環境光感測晶片相互耦接。
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TWI623778B (zh) * 2017-06-30 2018-05-11 Reflective optical large receiving angle ultraviolet index device
CN111948725A (zh) * 2019-05-17 2020-11-17 敦宏科技股份有限公司 光学近接感测装置

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