TWI584581B - Apparatus and methods for envelope tracking - Google Patents

Apparatus and methods for envelope tracking Download PDF

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TWI584581B
TWI584581B TW102105174A TW102105174A TWI584581B TW I584581 B TWI584581 B TW I584581B TW 102105174 A TW102105174 A TW 102105174A TW 102105174 A TW102105174 A TW 102105174A TW I584581 B TWI584581 B TW I584581B
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voltage
error
power amplifier
current
buck
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TW201349739A (en
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佛羅奈爾G 巴提努
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西凱渥資訊處理科技公司
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W52/00Power management, e.g. TPC [Transmission Power Control], power saving or power classes
    • H04W52/02Power saving arrangements
    • H04W52/0209Power saving arrangements in terminal devices
    • H04W52/0225Power saving arrangements in terminal devices using monitoring of external events, e.g. the presence of a signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • H03F1/0227Continuous control by using a signal derived from the input signal using supply converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/102A non-specified detector of a signal envelope being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/171A filter circuit coupled to the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/336A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21193Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the supply voltage of a power amplifier being continuously controlled, e.g. by an active potentiometer
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W88/00Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02Terminal devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

Description

用於波封追蹤之裝置及方法 Device and method for wave seal tracking

本發明之實施例係關於電子系統,且更特定言之係關於用於射頻(RF)電子器件之波封追蹤系統。 Embodiments of the present invention relate to electronic systems, and more particularly to wave seal tracking systems for radio frequency (RF) electronic devices.

功率放大器可包含於行動器件中以放大經由一天線傳輸之一RF信號。例如,在具有諸如全球行動通信系統(GSM)、分碼多重存取(CDMA)及寬頻分碼多重存取(W-CDMA)系統中發現之一分時多重存取(TDMA)架構之行動器件中,可使用一功率放大器以放大具有一相對較低功率之一RF信號。管理RF信號放大可係重要的,這係因為一所要傳輸功率位準可取決於使用者遠離一基地台及/或行動環境之距離。亦可採用功率放大器以輔助隨時間調節RF信號之功率位準,以在一指派接收時槽期間防止傳輸信號干擾。 A power amplifier can be included in the mobile device to amplify one of the RF signals transmitted via an antenna. For example, mobile devices found in one of the Time Division Multiple Access (TDMA) architectures, such as Global System for Mobile Communications (GSM), Code Division Multiple Access (CDMA), and Wideband Code Division Multiple Access (W-CDMA) systems. A power amplifier can be used to amplify an RF signal having a relatively low power. Managing RF signal amplification can be important because the level of power to be transmitted can depend on the distance of the user from a base station and/or the mobile environment. A power amplifier can also be employed to assist in adjusting the power level of the RF signal over time to prevent transmission signal interference during the assignment of the receive time slot.

一功率放大器之電力消耗可為一重要考量。一種用於減小一功率放大器之電力消耗之技術係波封追蹤,其中相對於RF信號之波封或信號波封控制功率放大器之一供應電壓。因此,當信號波封之一電壓位準增加時,功率放大器供應電壓之電壓位準可增加。同樣地,當信號波封之電壓位準降低時,可降低功率放大器供應電壓之電壓位準以減小電力消耗。 The power consumption of a power amplifier can be an important consideration. A technique for reducing the power consumption of a power amplifier is a wave envelope tracking in which one of the power amplifiers is supplied with respect to a wave seal or signal envelope of the RF signal. Therefore, when one of the voltage levels of the signal envelope increases, the voltage level of the power amplifier supply voltage can be increased. Similarly, when the voltage level of the signal envelope is lowered, the voltage level of the power amplifier supply voltage can be lowered to reduce power consumption.

需要改良之功率放大器系統。此外,需要改良之波封追蹤器。 There is a need for an improved power amplifier system. In addition, there is a need for an improved wave seal tracker.

在某些實施方案中,本發明係關於一種行動器件。該行動器件包含一功率放大器、一降壓轉換器及一誤差放大器。該功率放大器經組態以接收一功率放大器供應電壓且放大一射頻(RF)輸入信號以產生一RF輸出信號。該降壓轉換器經組態以將一電池電壓轉換為一降壓電壓,且基於一誤差電流控制該降壓電壓之一量值。該誤差放大器經組態以基於該RF輸入信號之一波封而產生一輸出電流且藉由使用該輸出電流調整該降壓電壓之量值而產生該功率放大器供應電壓。該誤差放大器經組態以藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 In certain embodiments, the present invention is directed to a mobile device. The mobile device includes a power amplifier, a buck converter, and an error amplifier. The power amplifier is configured to receive a power amplifier supply voltage and amplify a radio frequency (RF) input signal to produce an RF output signal. The buck converter is configured to convert a battery voltage to a step-down voltage and to control a magnitude of the step-down voltage based on an error current. The error amplifier is configured to generate an output current based on a wave seal of the RF input signal and to generate the power amplifier supply voltage by adjusting the magnitude of the step-down voltage using the output current. The error amplifier is configured to control the buck converter by varying a magnitude of the error current relative to a magnitude of the output current.

在各種實施例中,行動器件進一步包含一AC耦合電容器,該AC耦合電容器電連接在功率放大器供應電壓與經組態以產生輸出電流之誤差放大器之一輸出之間。 In various embodiments, the mobile device further includes an AC coupling capacitor electrically coupled between the power amplifier supply voltage and one of the error amplifiers configured to generate an output current.

在一些實施例中,降壓轉換器包含一降壓控制器、一降壓電感器及複數個降壓切換器,且該降壓控制器經組態以使用誤差電流以控制該複數個降壓切換器之一狀態以控制通過該降壓電感器之一電流。 In some embodiments, the buck converter includes a buck controller, a buck inductor, and a plurality of buck switches, and the buck controller is configured to use an error current to control the plurality of bucks One of the states of the switch controls the current through one of the buck inductors.

在數項實施例中,誤差電流包含一非反相誤差電流分量及一反相誤差電流分量,且降壓轉換器包含一電流比較器,該電流比較器經組態以藉由比較該非反相誤差電流分量與該反相誤差電流分量而控制該複數個降壓切換器之狀態。 In several embodiments, the error current includes a non-inverting error current component and an inverting error current component, and the buck converter includes a current comparator configured to compare the non-inverting The error current component and the inverted error current component control the state of the plurality of buck switches.

根據若干實施例,誤差放大器包含經組態以產生輸出電流之一第一對電晶體及經組態以產生誤差電流之一第二對電晶體,且該第二對電晶體實施為該第一對電晶體之一複本。 According to several embodiments, the error amplifier includes a first pair of transistors configured to generate an output current and a second pair of transistors configured to generate an error current, and the second pair of transistors is implemented as the first A copy of one of the transistors.

在一些實施例中,行動器件進一步包含經組態以接收RF輸出信號之一天線。 In some embodiments, the mobile device further includes an antenna configured to receive one of the RF output signals.

在數項實施例中,行動器件進一步包含經組態以產生RF輸入信號之波封之一收發器。 In several embodiments, the mobile device further includes a transceiver configured to generate a wave seal of the RF input signal.

在某些實施例中,行動器件進一步包含經組態以產生電池電壓之一電池。 In some embodiments, the mobile device further includes a battery configured to generate a battery voltage.

在若干實施例中,使用電池電壓對誤差放大器供電。 In several embodiments, the error amplifier is powered using the battery voltage.

在一些實施例中,行動器件進一步包含一升壓轉換器,該升壓轉換器經組態以將電池電壓轉換為具有大於電池電壓之一電壓量值之一電壓量值之一升壓電壓。使用升壓電壓對誤差放大器供電。 In some embodiments, the mobile device further includes a boost converter configured to convert the battery voltage to a boost voltage having one of a voltage magnitude greater than one of the battery voltages. The boost amplifier is used to power the error amplifier.

在某些實施例中,本發明係關於一種用於產生一功率放大器供應電壓之波封追蹤器。該波封追蹤器包含一降壓轉換器及一誤差放大器。該降壓轉換器經組態以將一電池電壓轉換為一降壓電壓,且基於一誤差電流控制該降壓電壓之一量值。該誤差放大器經組態以基於一波封信號產生一輸出電流且藉由使用該輸出電流調整該降壓電壓之量值而產生該功率放大器供應電壓。該誤差放大器經組態以藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 In certain embodiments, the present invention is directed to a wave seal tracker for generating a power amplifier supply voltage. The envelope tracker includes a buck converter and an error amplifier. The buck converter is configured to convert a battery voltage to a step-down voltage and to control a magnitude of the step-down voltage based on an error current. The error amplifier is configured to generate an output current based on a envelope signal and to generate the power amplifier supply voltage by adjusting the magnitude of the step-down voltage using the output current. The error amplifier is configured to control the buck converter by varying a magnitude of the error current relative to a magnitude of the output current.

根據數項實施例,誤差放大器包含經組態以接收波封信號之一第一輸入、一第二輸入及經組態以產生輸出電流之一輸出。在一些實施例中,波封追蹤器進一步包含電連接在該誤差放大器之第二輸入與該誤差放大器之輸出之間之一回饋電路。在數項實施例中,波封追蹤器進一步包含安置在該誤差放大器之輸出與功率放大器供應電壓之間之一AC耦合電容器。 According to several embodiments, the error amplifier includes a first input configured to receive the wave seal signal, a second input, and an output configured to generate an output current. In some embodiments, the wave seal tracker further includes a feedback circuit electrically coupled between the second input of the error amplifier and the output of the error amplifier. In several embodiments, the wave seal tracker further includes an AC coupling capacitor disposed between the output of the error amplifier and the power amplifier supply voltage.

在某些實施例中,使用電池電壓對誤差放大器供電。 In some embodiments, the error amplifier is powered using a battery voltage.

根據若干實施例,波封追蹤器進一步包含一升壓轉換器,該升壓轉換器經組態以將電池電壓轉換為具有大於電池電壓之一電壓量值之一電壓量值之一升壓電壓。使用該升壓電壓對誤差放大器供電。 According to several embodiments, the wave seal tracker further includes a boost converter configured to convert the battery voltage to one of a voltage magnitude greater than one of the battery voltages . The boost voltage is used to power the error amplifier.

在各種實施例中,降壓轉換器包含一降壓控制器、一降壓電感器及複數個降壓切換器。該降壓控制器經組態以使用誤差電流以控制該複數個降壓切換器之一狀態以控制通過該降壓電感器之一電流。 In various embodiments, the buck converter includes a buck controller, a buck inductor, and a plurality of buck switches. The buck controller is configured to use an error current to control a state of one of the plurality of buck switches to control current flow through the buck inductor.

在數項實施例中,誤差電流包含一非反相誤差電流分量及一反相誤差電流分量,且降壓轉換器包含一電流比較器,該電流比較器經組態以藉由比較該非反相誤差電流分量與該反相誤差電流分量而控制該複數個降壓切換器之狀態。 In several embodiments, the error current includes a non-inverting error current component and an inverting error current component, and the buck converter includes a current comparator configured to compare the non-inverting The error current component and the inverted error current component control the state of the plurality of buck switches.

在一些實施例中,誤差放大器包含經組態以產生輸出電流之一第一對電晶體及經組態以產生誤差電流之一第二對電晶體,且該第二對電晶體實施為該第一對電晶體之一複本。在各種實施例中,該第一對電晶體包含一第一p型場效電晶體(PFET)及一第一n型場效電晶體(NFET),且該第二對電晶體包含一第二PFET及一第二NFET。 In some embodiments, the error amplifier includes a first pair of transistors configured to generate an output current and a second pair of transistors configured to generate an error current, and the second pair of transistors is implemented as the first A replica of a pair of transistors. In various embodiments, the first pair of transistors comprises a first p-type field effect transistor (PFET) and a first n-type field effect transistor (NFET), and the second pair of transistors comprises a second A PFET and a second NFET.

在某些實施例中,本發明係關於一種產生一功率放大器供應電壓之方法。該方法包含:使用一降壓轉換器由一電池電壓產生一降壓電壓;基於一誤差電流控制該降壓電壓之一量值;使用一誤差放大器基於一波封信號產生一輸出電流;藉由使用該輸出電流調整該降壓電壓之量值而產生功率放大器供應電壓;及藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 In certain embodiments, the present invention is directed to a method of generating a power amplifier supply voltage. The method includes: using a buck converter to generate a step-down voltage from a battery voltage; controlling a magnitude of the step-down voltage based on an error current; generating an output current based on a wave-sealing signal using an error amplifier; The output current is used to adjust the magnitude of the step-down voltage to generate a power amplifier supply voltage; and the buck converter is controlled by varying a magnitude of the error current relative to a magnitude of the output current.

在各種實施例中,降壓轉換器包含一降壓電感器及複數個降壓切換器,且該方法進一步包含藉由基於誤差電流控制該複數個降壓切換器之一狀態而控制通過該降壓電感器之一電流。 In various embodiments, the buck converter includes a buck inductor and a plurality of buck switches, and the method further includes controlling the pass by controlling the state of one of the plurality of buck switches based on the error current One of the inductors of the current.

在一些實施例中,誤差電流包含一非反相誤差電流分量及一反相誤差電流分量,且該方法進一步包含藉由比較該非反相誤差電流分量與該反相誤差電流分量控制該複數個降壓切換器之狀態。 In some embodiments, the error current includes a non-inverted error current component and an inverted error current component, and the method further comprises controlling the plurality of drops by comparing the non-inverted error current component with the inverted error current component The state of the pressure switch.

在某些實施例中,該方法進一步包含對一功率放大器提供功率放大器供應電壓。 In some embodiments, the method further includes providing a power amplifier supply voltage to a power amplifier.

根據數項實施例,該方法進一步包含使用電池電壓對誤差放大器供電。 According to several embodiments, the method further includes powering the error amplifier using a battery voltage.

在各種實施例中,該方法進一步包含使用一升壓轉換器產生一 升壓電壓及使用該升壓電壓對誤差放大器供電。 In various embodiments, the method further includes generating a boost using a boost converter The boost voltage and the boost voltage are used to power the error amplifier.

在某些實施例中,本發明係關於一種多晶片模組(MCM)。該MCM包含一降壓轉換器及一誤差放大器。該降壓轉換器經組態以將一電池電壓轉換為一降壓電壓,且基於一誤差電流控制該降壓電壓之一量值。該誤差放大器經組態以基於一波封信號產生一輸出電流且藉由使用該輸出電流調整該降壓電壓之量值而產生功率放大器供應電壓。該誤差放大器經組態以藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 In certain embodiments, the present invention is directed to a multi-chip module (MCM). The MCM includes a buck converter and an error amplifier. The buck converter is configured to convert a battery voltage to a step-down voltage and to control a magnitude of the step-down voltage based on an error current. The error amplifier is configured to generate an output current based on a envelope signal and to generate a power amplifier supply voltage by adjusting the magnitude of the step-down voltage using the output current. The error amplifier is configured to control the buck converter by varying a magnitude of the error current relative to a magnitude of the output current.

在各種實施例中,誤差放大器包含經組態以接收波封信號之一第一輸入、一第二輸入及經組態以產生功率放大器供應電壓之一輸出。根據一些實施例,該MCM進一步包含電連接在該誤差放大器之第二輸入與該誤差放大器之輸出之間之一回饋電路。在某些實施例中,該MCM進一步包含安置在該誤差放大器之輸出與功率放大器供應電壓之間之一AC耦合電容器。 In various embodiments, the error amplifier includes a first input configured to receive a wave seal signal, a second input, and an output configured to generate a power amplifier supply voltage. According to some embodiments, the MCM further includes a feedback circuit electrically coupled between the second input of the error amplifier and the output of the error amplifier. In some embodiments, the MCM further includes an AC coupling capacitor disposed between the output of the error amplifier and a power amplifier supply voltage.

在一些實施例中,該MCM進一步包含經組態以接收功率放大器供應電壓之一功率放大器。 In some embodiments, the MCM further includes a power amplifier configured to receive one of the power amplifier supply voltages.

在某些實施例中,本發明係關於一種用於產生一功率放大器供應電壓之波封追蹤系統。該波封追蹤系統包含一直流轉直流轉換器及一誤差放大器。該直流轉直流轉換器經組態以由一電池電壓產生一經調節電壓且使用基於該功率放大器供應電壓之一低頻分量之一低頻回饋信號控制該經調節電壓之一電壓量值。該誤差放大器經組態以使用一波封信號及基於該功率放大器供應電壓之一高頻分量之一高頻回饋信號產生一輸出電流。視需要,該誤差放大器經組態以藉由使用該輸出電流調整該經調節電壓之量值而產生該功率放大器供應電壓。 In certain embodiments, the present invention is directed to a wave seal tracking system for generating a power amplifier supply voltage. The envelope tracking system includes a DC converter and an error amplifier. The DC to DC converter is configured to generate a regulated voltage from a battery voltage and to control a voltage magnitude of the regulated voltage using a low frequency feedback signal based on one of the low frequency components of the power amplifier supply voltage. The error amplifier is configured to generate an output current using a wave envelope signal and a high frequency feedback signal based on one of the high frequency components of the power amplifier supply voltage. The error amplifier is configured to generate the power amplifier supply voltage by adjusting the magnitude of the regulated voltage using the output current, as desired.

在各種實施例中,誤差放大器包含經組態以接收波封信號之一第一輸入、經組態以接收高頻回饋信號之一第二輸入及經組態以產生 輸出電流之一輸出。根據一些實施例,波封追蹤系統進一步包含電連接在該誤差放大器之輸出與該功率放大器供應電壓之間之一AC耦合電容器。根據某些實施例,波封追蹤系統進一步包含經組態以產生該高頻回饋信號之一回饋電路。在各種實施例中,該回饋電路包含電連接在該誤差放大器之輸出與該誤差放大器之第二輸入之間之一第一回饋電阻器及電連接在該誤差放大器之第二輸入與一功率低供應電壓之間之一第二回饋電阻器。 In various embodiments, the error amplifier includes a first input configured to receive one of the wave seal signals, a second input configured to receive the high frequency feedback signal, and configured to generate One of the output currents is output. According to some embodiments, the envelope tracking system further includes an AC coupling capacitor electrically coupled between the output of the error amplifier and the power amplifier supply voltage. According to some embodiments, the envelope tracking system further includes a feedback circuit configured to generate the high frequency feedback signal. In various embodiments, the feedback circuit includes a first feedback resistor electrically coupled between the output of the error amplifier and a second input of the error amplifier and electrically coupled to the second input of the error amplifier and a low power A second feedback resistor between the supply voltages.

在若干實施例中,使用電池電壓對誤差放大器供電。 In several embodiments, the error amplifier is powered using the battery voltage.

根據某些實施例,波封追蹤系統進一步包含電連接在經調節電壓與功率放大器供應電壓之間之一電感器。 According to some embodiments, the envelope tracking system further includes an inductor electrically coupled between the regulated voltage and a power amplifier supply voltage.

在一些實施例中,直流轉直流轉換器包含經組態以產生經調節電壓之一降壓轉換器。 In some embodiments, the DC to DC converter includes a buck converter configured to generate a regulated voltage.

在各種實施例中,波封追蹤系統進一步包含經組態以過濾功率放大器供應電壓以產生一經過濾之功率放大器供應電壓之一低通濾波器,且低頻回饋信號係部分基於該經過濾之功率放大器供應電壓。根據一些實施例,波封追蹤系統進一步包含經組態以藉由比較該經過濾之功率放大器供應電壓與一參考電壓而產生低頻回饋信號之一比較器。在若干實施例中,該波封追蹤系統進一步包含經組態以產生該參考電壓之一參考電壓產生器。 In various embodiments, the envelope tracking system further includes a low pass filter configured to filter the power amplifier supply voltage to generate a filtered power amplifier supply voltage, and the low frequency feedback signal is based in part on the filtered power amplifier Supply voltage. According to some embodiments, the envelope tracking system further includes a comparator configured to generate a low frequency feedback signal by comparing the filtered power amplifier supply voltage to a reference voltage. In several embodiments, the envelope tracking system further includes a reference voltage generator configured to generate the reference voltage.

在數項實施例中,波封追蹤系統進一步包含經組態以過濾功率放大器供應電壓以產生一經過濾之功率放大器供應電壓之一高通濾波器。在若干實施例中,該波封追蹤系統進一步包含經組態以比較該經過濾之功率放大器供應電壓與波封信號以產生一高頻波封信號之一比較器,且誤差放大器包含經組態以接收高頻波封信號之一第一輸入、經組態以接收高頻回饋信號之一第二輸入及經組態以產生輸出電流之一輸出。 In several embodiments, the envelope tracking system further includes a high pass filter configured to filter the power amplifier supply voltage to produce a filtered power amplifier supply voltage. In some embodiments, the envelope tracking system further includes a comparator configured to compare the filtered power amplifier supply voltage to the envelope signal to generate a high frequency envelope signal, and the error amplifier includes configured to receive A first input of the high frequency envelope signal, configured to receive a second input of the high frequency feedback signal and configured to produce one of the output current outputs.

在某些實施例中,本發明係關於一種無線器件。該無線器件包含一電力管理積體電路(PMIC)及一功率放大器模組。該PMIC包含一直流轉直流轉換器,該直流轉直流轉換器經組態以由一電池電壓產生一經調節電壓且基於一控制電壓之一電壓位準控制該經調節電壓之一電壓位準。該功率放大器模組包含經組態以放大一射頻(RF)信號之一功率放大器及經組態以基於一波封信號產生一輸出電流之一誤差放大器。該誤差放大器經組態以藉由使用該輸出電流調整該經調節電壓之電壓位準而產生用於功率放大器之一功率放大器供應電壓。該功率放大器模組經組態以至少部分基於該功率放大器供應電壓改變該控制電壓之電壓位準。 In certain embodiments, the present invention is directed to a wireless device. The wireless device includes a power management integrated circuit (PMIC) and a power amplifier module. The PMIC includes a DC to DC converter configured to generate a regulated voltage from a battery voltage and to control one of the regulated voltage levels based on a voltage level of a control voltage. The power amplifier module includes a power amplifier configured to amplify a radio frequency (RF) signal and an error amplifier configured to generate an output current based on a envelope signal. The error amplifier is configured to generate a power amplifier supply voltage for one of the power amplifiers by adjusting the voltage level of the regulated voltage using the output current. The power amplifier module is configured to vary a voltage level of the control voltage based at least in part on the power amplifier supply voltage.

根據若干實施例,無線器件進一步包含經組態以產生RF信號及波封信號之一收發器。 According to several embodiments, the wireless device further includes a transceiver configured to generate one of an RF signal and a wave seal signal.

在一些實施例中,無線器件進一步包含經組態以產生電池電壓之一電池。 In some embodiments, the wireless device further includes a battery configured to generate a battery voltage.

在數項實施例中,功率放大器模組進一步包含電連接在經調節電壓與功率放大器供應電壓之間之一電感器。 In several embodiments, the power amplifier module further includes an inductor electrically coupled between the regulated voltage and the power amplifier supply voltage.

根據某些實施例,無線器件進一步包含經組態以產生回應於功率放大器供應電壓之一高頻分量而改變之一回饋信號之一回饋電路,且誤差放大器包含經組態以接收波封信號之一第一輸入、經組態以接收該回饋信號之一第二輸入及經組態以產生輸出電流之一輸出。在若干實施例中,功率放大器模組進一步包含電連接在該誤差放大器之輸出與該功率放大器供應電壓之間之一AC耦合電容器。 According to some embodiments, the wireless device further includes one feedback circuit configured to generate one of the feedback signals in response to one of the high frequency components of the power amplifier supply voltage, and the error amplifier includes the configured to receive the wave seal signal A first input, configured to receive a second input of the feedback signal and configured to produce an output current output. In some embodiments, the power amplifier module further includes an AC coupling capacitor electrically coupled between the output of the error amplifier and the power amplifier supply voltage.

在各種實施例中,功率放大器模組進一步包含經組態以過濾功率放大器供應電壓以產生一經過濾之功率放大器供應電壓之一低通濾波器,且控制電壓係至少部分基於該經過濾之功率放大器供應電壓。在一些實施例中,該功率放大器模組進一步包含經組態以藉由比較該 經過濾之功率放大器供應電壓與一參考電壓產生控制電壓之一比較器。 In various embodiments, the power amplifier module further includes a low pass filter configured to filter the power amplifier supply voltage to generate a filtered power amplifier supply voltage, and the control voltage is based at least in part on the filtered power amplifier Supply voltage. In some embodiments, the power amplifier module further includes being configured to compare the The filtered power amplifier supply voltage is compared to a reference voltage generating control voltage.

在某些實施例中,本發明係關於一種產生一功率放大器供應電壓之方法。該方法包含:使用一直流轉直流轉換器由一電池電壓產生一經調節電壓;基於一控制電壓控制該經調節電壓之一量值;使用一誤差放大器基於一波封信號產生一輸出電流;藉由使用該輸出電流調整該經調節電壓之量值而產生用於一功率放大器之一功率放大器供應電壓;及藉由至少部分基於該功率放大器供應電壓改變該控制電壓之一電壓位準控制該直流轉直流轉換器。 In certain embodiments, the present invention is directed to a method of generating a power amplifier supply voltage. The method includes: generating a regulated voltage from a battery voltage using a DC-DC converter; controlling a magnitude of the adjusted voltage based on a control voltage; generating an output current based on a sealed signal using an error amplifier; The output current adjusts the magnitude of the regulated voltage to produce a power amplifier supply voltage for a power amplifier; and controls the DC to DC by changing a voltage level of the control voltage based at least in part on the power amplifier supply voltage converter.

在數項實施例中,該方法進一步包含透過一AC耦合電容器對功率放大器供應電壓提供輸出電流。 In several embodiments, the method further includes providing an output current to the power amplifier supply voltage through an AC coupling capacitor.

根據各種實施例,該方法進一步包含使用一回饋電路產生用於誤差放大器之一高頻回饋信號,且該高頻回饋信號經組態以回應於功率放大器供應電壓之一高頻分量而改變。 According to various embodiments, the method further includes generating a high frequency feedback signal for the error amplifier using a feedback circuit, and the high frequency feedback signal is configured to change in response to one of the high frequency components of the power amplifier supply voltage.

在若干實施例中,該方法進一步包含使用電池電壓對誤差放大器供電。 In several embodiments, the method further includes powering the error amplifier using a battery voltage.

根據各種實施例,該方法進一步包含使用一低通濾波器過濾功率放大器供應電壓以產生一經過濾之功率放大器供應電壓及比較該經過濾之功率放大器供應電壓與一參考電壓以產生控制電壓。 According to various embodiments, the method further includes filtering the power amplifier supply voltage using a low pass filter to generate a filtered power amplifier supply voltage and comparing the filtered power amplifier supply voltage to a reference voltage to generate a control voltage.

在某些實施例中,本發明係關於一種射頻系統。該射頻系統包含一電力管理積體電路(PMIC)、一第一功率放大器模組及一第二功率放大器模組。該PMIC包含一直流轉直流轉換器,該直流轉直流轉換器經組態以由一電池電壓產生一經調節電壓且使用複數個控制電壓控制該經調節電壓之一電壓位準。該第一功率放大器模組包含:一第一功率放大器,其經組態以放大一第一射頻(RF)信號;及一第一誤差放大器,其經組態以藉由基於該第一RF信號之一波封調整該經調節電 壓之電壓位準而產生用於該第一功率放大器之一第一功率放大器供應電壓。該第一功率放大器模組經組態以在啟用該第一功率放大器時至少部分基於該第一功率放大器供應電壓之一電壓位準改變該複數個控制電壓之一第一控制電壓之電壓位準。該第二功率放大器模組包含:一第二功率放大器,其經組態以放大一第二RF信號;及一第二誤差放大器,其經組態以藉由基於該第二RF信號之一波封調整該經調節電壓之電壓位準而產生用於該第二功率放大器之一第二功率放大器供應電壓。該第二功率放大器模組經組態以在啟用該第二功率放大器時至少部分基於該第二功率放大器供應電壓之一電壓位準改變該複數個控制電壓之一第二控制電壓之電壓位準。 In certain embodiments, the present invention is directed to a radio frequency system. The RF system includes a power management integrated circuit (PMIC), a first power amplifier module, and a second power amplifier module. The PMIC includes a DC to DC converter configured to generate a regulated voltage from a battery voltage and control a voltage level of the regulated voltage using a plurality of control voltages. The first power amplifier module includes: a first power amplifier configured to amplify a first radio frequency (RF) signal; and a first error amplifier configured to be based on the first RF signal One of the wave seals adjusts the regulated electricity The voltage level of the voltage is generated for the first power amplifier supply voltage of one of the first power amplifiers. The first power amplifier module is configured to change a voltage level of the first control voltage of the plurality of control voltages based at least in part on a voltage level of the first power amplifier supply voltage when the first power amplifier is enabled . The second power amplifier module includes: a second power amplifier configured to amplify a second RF signal; and a second error amplifier configured to generate a wave based on the second RF signal The capacitor adjusts the voltage level of the regulated voltage to generate a second power amplifier supply voltage for the second power amplifier. The second power amplifier module is configured to change a voltage level of the second control voltage of the plurality of control voltages based at least in part on a voltage level of the second power amplifier supply voltage when the second power amplifier is enabled .

在各種實施例中,第一功率放大器模組包含電連接在經調節電壓與第一功率放大器供應電壓之間之一第一電感器,且第二功率放大器模組包含電連接在經調節電壓與第二功率放大器供應電壓之間之一第二電感器。 In various embodiments, the first power amplifier module includes a first inductor electrically coupled between the regulated voltage and a first power amplifier supply voltage, and the second power amplifier module includes an electrical connection between the regulated voltage and The second power amplifier supplies a voltage between the second inductor.

在一些實施例中,射頻系統進一步包含一電話板、一第一電感器及一第二電感器。該第一電感器係安置在該電話板上且電連接在經調節電壓與第一功率放大器供應電壓之間。該第二電感器係安置在該電話板上且電連接在經調節電壓與第二功率放大器供應電壓之間。 In some embodiments, the radio frequency system further includes a telephone board, a first inductor, and a second inductor. The first inductor is disposed on the telephone board and electrically coupled between the regulated voltage and a first power amplifier supply voltage. The second inductor is disposed on the telephone board and electrically coupled between the regulated voltage and a second power amplifier supply voltage.

根據若干實施例,射頻系統進一步包含一第三功率放大器模組,該第三功率放大器模組包含:一第三功率放大器,其經組態以放大一第三RF信號;及一第三誤差放大器,其經組態以藉由基於該第三RF信號之一波封調整該經調節電壓之電壓位準而產生用於該第三功率放大器之一第三功率放大器供應電壓。該第三功率放大器模組經組態以在啟用該第三功率放大器時至少部分基於該第三功率放大器供應電壓之一電壓位準改變該複數個控制電壓之一第三控制電壓之電壓位準。 According to some embodiments, the radio frequency system further includes a third power amplifier module, the third power amplifier module comprising: a third power amplifier configured to amplify a third RF signal; and a third error amplifier Configuring to generate a third power amplifier supply voltage for the third power amplifier by adjusting a voltage level of the regulated voltage based on one of the third RF signals. The third power amplifier module is configured to change a voltage level of one of the plurality of control voltages and a third control voltage based at least in part on a voltage level of the third power amplifier supply voltage when the third power amplifier is enabled .

10‧‧‧功率放大器模組(PAM) 10‧‧‧Power Amplifier Module (PAM)

11‧‧‧行動器件 11‧‧‧Mobile devices

12‧‧‧切換器 12‧‧‧Switcher

13‧‧‧收發器 13‧‧‧ transceiver

14‧‧‧天線 14‧‧‧Antenna

15‧‧‧傳輸路徑 15‧‧‧Transmission path

16‧‧‧接收路徑 16‧‧‧Receiving path

17‧‧‧功率放大器 17‧‧‧Power Amplifier

18‧‧‧控制組件 18‧‧‧Control components

19‧‧‧電腦可讀媒體/電腦可讀記憶體 19‧‧‧ Computer readable media/computer readable memory

20‧‧‧處理器 20‧‧‧ processor

21‧‧‧電池 21‧‧‧Battery

24‧‧‧定向耦合器 24‧‧‧Directional coupler

26‧‧‧功率放大器系統 26‧‧‧Power Amplifier System

27‧‧‧電感器 27‧‧‧Inductors

29‧‧‧雙極電晶體 29‧‧‧Bipolar transistor

30‧‧‧波封追蹤器 30‧‧‧ Wave Seal Tracker

31‧‧‧阻抗匹配區塊 31‧‧‧ impedance matching block

32‧‧‧功率放大器 32‧‧‧Power Amplifier

33‧‧‧收發器 33‧‧‧ transceiver

34‧‧‧基頻帶處理器 34‧‧‧Baseband processor

35‧‧‧波封塑形區塊 35‧‧‧ wave seal shaped block

36‧‧‧數位轉類比轉換器(DAC) 36‧‧‧Digital to analog converter (DAC)

37‧‧‧I/Q調變器 37‧‧‧I/Q Modulator

38‧‧‧混合器 38‧‧‧ Mixer

39‧‧‧類比轉數位轉換器(ADC) 39‧‧‧ Analog to Digital Converter (ADC)

40‧‧‧功率放大器系統 40‧‧‧Power Amplifier System

41‧‧‧射頻(RF)信號 41‧‧‧RF (RF) signal

42‧‧‧波封 42‧‧‧ wave seal

43‧‧‧功率放大器供應電壓 43‧‧‧Power amplifier supply voltage

44‧‧‧功率放大器供應電壓 44‧‧‧Power amplifier supply voltage

47‧‧‧曲線圖 47‧‧‧Chart

48‧‧‧曲線圖 48‧‧‧Graph

50‧‧‧波封追蹤系統 50‧‧‧ Wave Sealing System

51‧‧‧誤差放大器 51‧‧‧Error amplifier

52‧‧‧回饋電路 52‧‧‧Feedback circuit

53‧‧‧降壓轉換器 53‧‧‧Buck Converter

54‧‧‧升壓轉換器 54‧‧‧Boost Converter

55‧‧‧電感器 55‧‧‧Inductors

60‧‧‧升壓轉換器 60‧‧‧Boost Converter

63‧‧‧升壓電路 63‧‧‧Boost circuit

64‧‧‧升壓控制區塊 64‧‧‧Boost control block

65‧‧‧電感器 65‧‧‧Inductors

66a‧‧‧第一切換器 66a‧‧‧First switcher

66b‧‧‧第二切換器 66b‧‧‧Second switcher

67‧‧‧旁路電容器 67‧‧‧ Bypass capacitor

70‧‧‧降壓轉換器 70‧‧‧Buck Converter

73‧‧‧降壓電路 73‧‧‧Buck circuit

74‧‧‧降壓控制區塊 74‧‧‧Buck Control Block

75‧‧‧電感器 75‧‧‧Inductors

76a‧‧‧第一切換器 76a‧‧‧First switcher

76b‧‧‧第二切換器 76b‧‧‧Second switcher

77‧‧‧旁路電容器 77‧‧‧ Bypass capacitor

78‧‧‧磁滯電流比較器 78‧‧‧hysteresis current comparator

80‧‧‧磁滯電流比較器 80‧‧‧hysteresis current comparator

81‧‧‧第一n型場效電晶體(NFET) 81‧‧‧First n-type field effect transistor (NFET)

82‧‧‧第二n型場效電晶體(NFET) 82‧‧‧Second n-type field effect transistor (NFET)

83‧‧‧第三n型場效電晶體(NFET) 83‧‧‧ Third n-type field effect transistor (NFET)

84‧‧‧第四n型場效電晶體(NFET) 84‧‧‧ Fourth n-type field effect transistor (NFET)

85‧‧‧第五n型場效電晶體(NFET) 85‧‧‧ Fifth n-type field effect transistor (NFET)

86‧‧‧第六n型場效電晶體(NFET) 86‧‧‧ Sixth n-type field effect transistor (NFET)

87‧‧‧第七n型場效電晶體(NFET) 87‧‧‧The seventh n-type field effect transistor (NFET)

88‧‧‧第八n型場效電晶體(NFET) 88‧‧‧The eighth n-type field effect transistor (NFET)

89‧‧‧第九n型場效電晶體(NFET) 89‧‧‧Ninth n-type field effect transistor (NFET)

91‧‧‧第一p型場效電晶體(PFET) 91‧‧‧First p-type field effect transistor (PFET)

92‧‧‧第二p型場效電晶體(PFET) 92‧‧‧Second p-type field effect transistor (PFET)

93‧‧‧第三p型場效電晶體(PFET) 93‧‧‧ Third p-type field effect transistor (PFET)

94‧‧‧第四p型場效電晶體(PFET) 94‧‧‧ Fourth p-type field effect transistor (PFET)

100‧‧‧誤差放大器 100‧‧‧Error amplifier

101‧‧‧第一n型場效電晶體(NFET) 101‧‧‧First n-type field effect transistor (NFET)

102‧‧‧第二n型場效電晶體(NFET) 102‧‧‧Second n-type field effect transistor (NFET)

103‧‧‧第三n型場效電晶體(NFET) 103‧‧‧ Third n-type field effect transistor (NFET)

104‧‧‧第四n型場效電晶體(NFET) 104‧‧‧ Fourth n-type field effect transistor (NFET)

105‧‧‧第五n型場效電晶體(NFET) 105‧‧‧ Fifth n-type field effect transistor (NFET)

106‧‧‧第六n型場效電晶體(NFET) 106‧‧‧ Sixth n-type field effect transistor (NFET)

107‧‧‧第七n型場效電晶體(NFET) 107‧‧‧The seventh n-type field effect transistor (NFET)

108‧‧‧第八n型場效電晶體(NFET) 108‧‧‧The eighth n-type field effect transistor (NFET)

111‧‧‧第一p型場效電晶體(PFET) 111‧‧‧First p-type field effect transistor (PFET)

112‧‧‧第二p型場效電晶體(PFET) 112‧‧‧Second p-type field effect transistor (PFET)

113‧‧‧第三p型場效電晶體(PFET) 113‧‧‧ Third p-type field effect transistor (PFET)

114‧‧‧第四p型場效電晶體(PFET) 114‧‧‧Four p-type field effect transistor (PFET)

115‧‧‧第五p型場效電晶體(PFET) 115‧‧‧ Fifth p-type field effect transistor (PFET)

116‧‧‧第六p型場效電晶體(PFET) 116‧‧‧ Sixth p-type field effect transistor (PFET)

117‧‧‧第七p型場效電晶體(PFET) 117‧‧‧The seventh p-type field effect transistor (PFET)

118‧‧‧第八p型場效電晶體(PFET) 118‧‧‧The eighth p-type field effect transistor (PFET)

119‧‧‧第九p型場效電晶體(PFET) 119‧‧‧Ninth p-type field effect transistor (PFET)

120‧‧‧偏壓電路 120‧‧‧bias circuit

130‧‧‧波封追蹤系統 130‧‧‧Bomb Tracking System

150‧‧‧曲線圖 150‧‧‧Graph

151‧‧‧第一曲線 151‧‧‧First curve

152‧‧‧第二曲線 152‧‧‧second curve

153‧‧‧第三曲線 153‧‧‧ third curve

160‧‧‧波封追蹤系統 160‧‧‧ Wave Sealing System

161‧‧‧交流(AC)耦合電容器 161‧‧•AC (AC) coupling capacitor

162‧‧‧旁路電容器 162‧‧‧Bypass capacitor

170‧‧‧波封追蹤模組/功率放大器模組 170‧‧‧ Wave Sealing Module/Power Amplifier Module

171‧‧‧波封追蹤晶粒 171‧‧‧ Wave Sealing Grain

172a‧‧‧第一接針/襯墊 172a‧‧‧First pin/pad

172b‧‧‧第二接針/襯墊 172b‧‧‧Second pin/pad

172c‧‧‧第三接針/襯墊 172c‧‧‧3rd pin/pad

172d‧‧‧第四接針/襯墊 172d‧‧‧fourth pin/pad

172e‧‧‧第五接針/襯墊 172e‧‧‧5th pin/pad

172f‧‧‧第六接針/襯墊 172f‧‧‧6th pin/pad

172g‧‧‧第七接針/襯墊 172g‧‧‧7th pin/pad

174‧‧‧n型場效電晶體(NFET) 174‧‧‧n type field effect transistor (NFET)

175‧‧‧p型場效電晶體(PFET) 175‧‧‧p type field effect transistor (PFET)

180‧‧‧波封追蹤模組 180‧‧‧ Wave Sealing Module

181‧‧‧波封追蹤晶粒 181‧‧‧ wave seal tracking grain

182a‧‧‧第一接針/襯墊 182a‧‧‧First pin/pad

182b‧‧‧第二接針/襯墊 182b‧‧‧Second pin/pad

182c‧‧‧第三接針/襯墊 182c‧‧‧3rd pin/pad

182d‧‧‧第四接針/襯墊 182d‧‧‧4th pin/pad

182e‧‧‧第五接針/襯墊 182e‧‧‧5th pin/pad

182f‧‧‧第六接針/襯墊 182f‧‧‧6th pin/pad

182g‧‧‧第七接針/襯墊 182g‧‧‧7th pin/pad

183‧‧‧誤差放大器 183‧‧‧Error amplifier

184‧‧‧n型場效電晶體(NFET) 184‧‧‧n type field effect transistor (NFET)

185‧‧‧p型場效電晶體(PFET) 185‧‧‧p type field effect transistor (PFET)

186‧‧‧直流轉直流控制器 186‧‧‧DC to DC controller

187‧‧‧參考電壓產生器 187‧‧‧reference voltage generator

188‧‧‧低通濾波器 188‧‧‧Low-pass filter

189a‧‧‧第一回饋電阻器 189a‧‧‧First feedback resistor

189b‧‧‧第二回饋電阻器 189b‧‧‧second feedback resistor

190‧‧‧電話板 190‧‧‧Phone board

191‧‧‧收發器積體電路(IC) 191‧‧‧Transceiver Integrated Circuit (IC)

192‧‧‧電力管理積體電路(PMIC) 192‧‧‧Power Management Integrated Circuit (PMIC)

193‧‧‧功率放大器(PA)模組 193‧‧‧Power Amplifier (PA) Module

200‧‧‧射頻(RF)系統 200‧‧‧ Radio Frequency (RF) System

201‧‧‧電力管理積體電路(PMIC) 201‧‧‧Power Management Integrated Circuit (PMIC)

202a‧‧‧第一接針 202a‧‧‧first pin

202b‧‧‧第二接針 202b‧‧‧second pin

202c‧‧‧第三接針 202c‧‧‧third pin

205‧‧‧電力管理積體電路(PMIC)電感器 205‧‧‧Power Management Integrated Circuit (PMIC) Inductors

207‧‧‧電力管理積體電路(PMIC)電容器 207‧‧‧Power Management Integrated Circuit (PMIC) Capacitors

211‧‧‧功率放大器(PA)模組 211‧‧‧Power Amplifier (PA) Module

212a‧‧‧第一接針 212a‧‧‧first pin

212b‧‧‧第二接針 212b‧‧‧second pin

212c‧‧‧第三接針 212c‧‧‧third pin

212d‧‧‧第四接針 212d‧‧‧fourth pin

212e‧‧‧第五接針 212e‧‧‧5th pin

212f‧‧‧第六接針 212f‧‧‧6th pin

212g‧‧‧第七接針 212g‧‧‧ seventh pin

215‧‧‧電感器 215‧‧‧Inductors

216‧‧‧高通濾波器 216‧‧‧High-pass filter

220‧‧‧射頻(RF)系統 220‧‧‧ Radio Frequency (RF) System

221‧‧‧功率放大器模組 221‧‧‧Power Amplifier Module

228‧‧‧比較器 228‧‧‧ Comparator

229‧‧‧比較器 229‧‧‧ Comparator

230‧‧‧多頻帶功率放大器系統 230‧‧‧Multi-band power amplifier system

231‧‧‧第一功率放大器模組 231‧‧‧First Power Amplifier Module

232‧‧‧第二功率放大器模組 232‧‧‧Second power amplifier module

233‧‧‧第三功率放大器模組 233‧‧‧ Third Power Amplifier Module

234‧‧‧電力管理積體電路(IC) 234‧‧‧Power Management Integrated Circuit (IC)

240‧‧‧多頻帶功率放大器系統 240‧‧‧Multi-band power amplifier system

241‧‧‧第一電感器 241‧‧‧First Inductor

242‧‧‧第二電感器 242‧‧‧second inductor

243‧‧‧第三電感器 243‧‧‧ Third Inductor

250‧‧‧曲線圖 250‧‧‧Curve

251‧‧‧第一曲線 251‧‧‧First curve

252‧‧‧第二曲線 252‧‧‧second curve

260‧‧‧多模式功率放大器(PA)模組 260‧‧‧Multimode Power Amplifier (PA) Module

262a‧‧‧第一接針 262a‧‧‧first pin

262b‧‧‧第二接針 262b‧‧‧second pin

262c‧‧‧第三接針 262c‧‧‧ third pin

262d‧‧‧第四接針 262d‧‧‧fourth pin

262e‧‧‧第五接針 262e‧‧‧5th pin

262f‧‧‧第六接針 262f‧‧‧6th pin

262g‧‧‧第七接針 262g‧‧‧ seventh pin

262h‧‧‧第八接針 262h‧‧‧8th pin

262i‧‧‧第九接針 262i‧‧‧ninth pin

262j‧‧‧第十接針 262j‧‧‧10th pin

262k‧‧‧第十一接針 262k‧‧‧11st pin

262l‧‧‧第十二接針 262l‧‧‧12th pin

262m‧‧‧第十三接針 262m‧‧‧13th pin

262n‧‧‧第十四接針 262n‧‧‧fourteenth pin

262o‧‧‧第十五接針 262o‧‧‧15th pin

262p‧‧‧第十六接針 262p‧‧‧16th pin

262q‧‧‧第十七接針 262q‧‧‧17th pin

262r‧‧‧第十八接針 262r‧‧‧18th pin

262s‧‧‧第十九接針 262s‧‧‧19th pin

263‧‧‧高頻帶3G/4G功率放大器電路 263‧‧‧High-band 3G/4G power amplifier circuit

264‧‧‧高頻帶2G功率放大器電路 264‧‧‧High-band 2G power amplifier circuit

265‧‧‧低頻帶2G功率放大器電路 265‧‧‧Low-band 2G power amplifier circuit

266‧‧‧低頻帶3G/4G功率放大器電路 266‧‧‧Low-band 3G/4G power amplifier circuit

267‧‧‧切換器 267‧‧‧Switcher

268‧‧‧切換控制區塊 268‧‧‧Switch control block

269‧‧‧數位控制區塊 269‧‧‧Digital Control Block

270‧‧‧功率放大器控制方塊 270‧‧‧Power Amplifier Control Block

275‧‧‧定向耦合器 275‧‧‧Directional coupler

ENVELOPE‧‧‧波封信號 ENVELOPE‧‧‧ wave seal signal

HB ANT‧‧‧高頻帶天線 HB ANT‧‧‧High-band antenna

IERROR‧‧‧誤差電流 I ERROR ‧‧‧Error current

IERROR-‧‧‧差動誤差電流 I ERROR- ‧‧‧Differential error current

IERROR+‧‧‧差動誤差電流 I ERROR+ ‧‧‧Differential error current

IREF‧‧‧參考電流 I REF ‧‧‧Reference current

LB ANT‧‧‧低頻帶天線 LB ANT‧‧‧Low Band Antenna

OUT‧‧‧輸出信號 OUT‧‧‧ output signal

RF SIGNAL‧‧‧射頻信號 RF SIGNAL‧‧‧RF signal

RF_IN‧‧‧射頻(RF)信號 RF_IN‧‧‧RF (RF) signal

RF_OUT‧‧‧經放大之射頻(RF)信號 RF_OUT‧‧‧Amplified Radio Frequency (RF) Signal

V1‧‧‧功率低供應電壓 V 1 ‧‧‧Power low supply voltage

V2‧‧‧功率高供應電壓 V 2 ‧‧‧Power high supply voltage

VBATT‧‧‧電池電壓 V BATT ‧‧‧Battery voltage

VBIAS‧‧‧偏壓電壓 V BIAS ‧‧‧ bias voltage

VBIAS1‧‧‧第一偏壓電壓 V BIAS1 ‧‧‧First bias voltage

VBIAS2‧‧‧第二偏壓電壓 V BIAS2 ‧‧‧second bias voltage

VBIAS3‧‧‧第三偏壓電壓 V BIAS3 ‧‧‧ Third bias voltage

VBIAS4‧‧‧第四偏壓電壓 V BIAS4 ‧‧‧fourth bias voltage

VBOOST‧‧‧升壓電壓 V BOOST ‧‧‧Boost voltage

VBUCK‧‧‧降壓電壓 V BUCK ‧‧‧Buck Voltage

VCC_PA‧‧‧功率放大器供應電壓 V CC_PA ‧‧‧Power amplifier supply voltage

VCC_PA1‧‧‧第一功率放大器供應電壓 V CC_PA1 ‧‧‧First power amplifier supply voltage

VCC_PA2‧‧‧第二功率放大器供應電壓 V CC_PA2 ‧‧‧second power amplifier supply voltage

VCC_PA3‧‧‧第三功率放大器供應電壓 V CC_PA3 ‧‧‧ Third power amplifier supply voltage

VCONTROL‧‧‧控制電壓 V CONTROL ‧‧‧Control voltage

VCONTROL1‧‧‧第一控制電壓 V CONTROL1 ‧‧‧First control voltage

VCONTROL2‧‧‧第二控制電壓 V CONTROL2 ‧‧‧second control voltage

VCONTROL3‧‧‧第三控制電壓 V CONTROL3 ‧‧‧ third control voltage

VIN-‧‧‧差動輸入電壓/負或第二輸入電壓 V IN- ‧‧‧Differential input voltage / negative or second input voltage

VIN+‧‧‧差動輸入電壓/正或第一輸入電壓 V IN+ ‧‧‧Differential input voltage / positive or first input voltage

VOUT‧‧‧輸出電壓 V OUT ‧‧‧ output voltage

VREF‧‧‧參考電壓 V REF ‧‧‧reference voltage

VREG‧‧‧經調節電壓 V REG ‧‧‧Adjusted voltage

圖1係用於放大一射頻(RF)信號之一功率放大器模組之一示意圖。 1 is a schematic diagram of a power amplifier module for amplifying a radio frequency (RF) signal.

圖2係可包含圖1之功率放大器模組之一或多者之一例示性無線器件之一示意方塊圖。 2 is a schematic block diagram of one exemplary wireless device that may include one or more of the power amplifier modules of FIG. 1.

圖3A係包含一波封追蹤器之一功率放大器系統之一實例之一示意方塊圖。 Figure 3A is a schematic block diagram of one example of a power amplifier system including a wave seal tracker.

圖3B係包含一波封追蹤器之一功率放大器系統之另一實例之一示意方塊圖。 Figure 3B is a schematic block diagram of another example of a power amplifier system including a wave seal tracker.

圖4A至圖4B展示功率放大器供應電壓對時間之兩個實例。 4A-4B show two examples of power amplifier supply voltage versus time.

圖5係一波封追蹤系統之一實施例之一示意方塊圖。 Figure 5 is a schematic block diagram of one embodiment of a wave seal tracking system.

圖6係一升壓轉換器之一實施例之一電路圖。 Figure 6 is a circuit diagram of one embodiment of a boost converter.

圖7係一降壓轉換器之一實施例之一電路圖。 Figure 7 is a circuit diagram of one embodiment of a buck converter.

圖8係一磁滯電流比較器之一實施例之一電路圖。 Figure 8 is a circuit diagram of one embodiment of a hysteresis current comparator.

圖9係一誤差放大器之一實施例之一電路圖。 Figure 9 is a circuit diagram of one embodiment of an error amplifier.

圖10係一波封追蹤系統之另一實施例之一示意方塊圖。 Figure 10 is a schematic block diagram of another embodiment of a wave seal tracking system.

圖11展示圖5之波封追蹤系統之電流對時間之一曲線圖之一實例。 Figure 11 shows an example of a plot of current vs. time for the envelope seal tracking system of Figure 5.

圖12係一波封追蹤系統之另一實施例之一示意方塊圖。 Figure 12 is a schematic block diagram of another embodiment of a wave seal tracking system.

圖13係一波封追蹤模組之一實施例之一示意方塊圖。 Figure 13 is a schematic block diagram of one embodiment of a wave blocking tracking module.

圖14係一波封追蹤模組之另一實施例之一示意方塊圖。 Figure 14 is a schematic block diagram of another embodiment of a wave blocking tracking module.

圖15係一電話板之一實施例之一示意方塊圖。 Figure 15 is a schematic block diagram of one embodiment of a telephone board.

圖16A係一RF系統之一實施例之一示意方塊圖。 Figure 16A is a schematic block diagram of one embodiment of an RF system.

圖16B係一RF系統之另一實施例之一示意方塊圖。 Figure 16B is a schematic block diagram of another embodiment of an RF system.

圖17A係根據一實施例之一多頻帶功率放大器系統之一示意方塊圖。 17A is a schematic block diagram of one of a multi-band power amplifier system in accordance with an embodiment.

圖17B係根據另一實施例之一多頻帶功率放大器系統之一示意方塊圖。 Figure 17B is a schematic block diagram of one of the multi-band power amplifier systems in accordance with another embodiment.

圖18展示圖12之波封追蹤系統之電壓對時間之一曲線圖之一實例。 Figure 18 shows an example of a plot of voltage versus time for the envelope tracking system of Figure 12.

圖19係根據一實施例之一多模式功率放大器模組之一示意方塊圖。 19 is a schematic block diagram of one of a multi-mode power amplifier module in accordance with an embodiment.

本文提供之標題(若有)僅係為方便起見且不一定影響本發明之範疇及意義。 The headings, if any, provided herein are for convenience only and do not necessarily affect the scope and meaning of the invention.

包含波封追蹤器之例示性功率放大器系統之概述Overview of an exemplary power amplifier system with a wave seal tracker

圖1係用於放大一射頻(RF)信號之一功率放大器模組(PAM)10之一示意圖。經圖解說明之功率放大器模組10可經組態以放大一RF信號(RF_IN)以產生一經放大之RF信號(RF_OUT)。如本文所述,該功率放大器模組10可包含一或多個功率放大器。 1 is a schematic diagram of one of a power amplifier module (PAM) 10 for amplifying a radio frequency (RF) signal. The illustrated power amplifier module 10 can be configured to amplify an RF signal (RF_IN) to produce an amplified RF signal (RF_OUT). As described herein, the power amplifier module 10 can include one or more power amplifiers.

圖2係可包含圖1之功率放大器模組10之一或多者之一例示性無線或行動器件11之一示意方塊圖。該無線器件11亦可包含實施本發明之一或多個特徵之一波封追蹤系統。 2 is a schematic block diagram of one exemplary wireless or mobile device 11 that may include one or more of the power amplifier modules 10 of FIG. The wireless device 11 can also include a wave seal tracking system that implements one or more of the features of the present invention.

圖2中所描繪之例示性無線器件11可表示諸如一多頻帶/多模式行動電話之一多頻帶及/或多模式器件。例如,全球行動通信系統(GSM)標準係用於世界上許多地區之數位蜂巢式通信之一模式。GSM模式行動電話可在四種頻率頻帶之一或多者下操作:850 MHz(對於Tx,大約824 MHz至849 MHz,對於Rx,大約869 MHz至894 MHz)、900 MHz(對於Tx,大約880 MHz至915 MHz,對於Rx,大約925 MHz至960 MHz)、1800 MHz(對於Tx,大約1710 MHz至1785 MHz,對於Rx,大約1805 MHz至1880 MHz)及1900 MHz(對於Tx,大約1850 MHz至1910 MHz,對於Rx,大約1930 MHz至1990 MHz)。GSM頻帶之變 體及/或區域/國家實施方案亦可用於世界上的不同地區。 The exemplary wireless device 11 depicted in FIG. 2 may represent a multi-band and/or multi-mode device such as a multi-band/multi-mode mobile phone. For example, the Global System for Mobile Communications (GSM) standard is used in one of the digital cellular communications modes in many parts of the world. The GSM mode mobile phone can operate in one or more of the four frequency bands: 850 MHz (about 824 MHz to 849 MHz for Tx, about 869 MHz to 894 MHz for Rx), 900 MHz (for Tx, about 880) MHz to 915 MHz, approximately 925 MHz to 960 MHz for Rx, 1800 MHz (approximately 1710 MHz to 1785 MHz for Tx, approximately 1805 MHz to 1880 MHz for Rx) and 1900 MHz (for Tx, approximately 1850 MHz to 1910 MHz, for Rx, approximately 1930 MHz to 1990 MHz). GSM band change The physical and/or regional/national implementation schemes can also be used in different regions of the world.

分碼多重存取(CDMA)係可實施於行動電話器件中之另一標準。在某些實施方案中,CDMA器件可在800 MHz、900 MHz、1800 MHz及1900 MHz頻帶之一或多者下操作,而某些W-CDMA及長期演進(LTE)器件可在例如約22個射頻頻譜頻帶內操作。 Code division multiple access (CDMA) is another standard that can be implemented in mobile phone devices. In some embodiments, a CDMA device can operate in one or more of the 800 MHz, 900 MHz, 1800 MHz, and 1900 MHz bands, while some W-CDMA and Long Term Evolution (LTE) devices can be, for example, about 22 Operation in the RF spectrum band.

可以前述例示性模式及/或頻帶且以其他通信標準實施本發明之一或多個特徵。例如,802.11、2G、3G、4G、LTE及高級LTE係此等標準之非限制性實例。 One or more features of the present invention can be implemented in the foregoing exemplary modes and/or frequency bands and in other communication standards. For example, 802.11, 2G, 3G, 4G, LTE, and LTE-Advanced are non-limiting examples of such standards.

在某些實施例中,該無線器件11可包含切換器12、一收發器13、一天線14、功率放大器17、一控制組件18、一電腦可讀媒體19、一處理器20、一電池21及一波封追蹤器30。 In some embodiments, the wireless device 11 can include a switch 12, a transceiver 13, an antenna 14, a power amplifier 17, a control component 18, a computer readable medium 19, a processor 20, and a battery 21. And a wave of tracker 30.

該收發器13可產生經由該天線14傳輸之RF信號。此外,該收發器13可自該天線14接收傳入RF信號。 The transceiver 13 can generate an RF signal transmitted via the antenna 14. Additionally, the transceiver 13 can receive an incoming RF signal from the antenna 14.

應瞭解,可藉由在圖2中共同地表示為收發器13之一或多個組件達成與RF信號之傳輸及接收相關聯之各種功能性。例如,一單個組件可經組態以提供傳輸及接收功能性二者。在另一實例中,可藉由分離組件提供傳輸及接收功能性。 It will be appreciated that various functionalities associated with the transmission and reception of RF signals can be achieved by collectively representing one or more components of transceiver 13 in FIG. For example, a single component can be configured to provide both transmission and reception functionality. In another example, the transmission and reception functionality can be provided by separate components.

類似地,應瞭解,可藉由在圖2中共同地表示為天線14之一或多個組件達成與RF信號之傳輸及接收相關聯之各種天線功能性。例如,一單個天線可經組態以提供傳輸及接收功能性二者。在另一實例中,可藉由分離天線提供傳輸及接收功能性。在又另一實例中,與該無線器件11相關聯之不同頻帶可具備不同的天線。 Similarly, it will be appreciated that various antenna functionality associated with the transmission and reception of RF signals can be achieved by collectively representing one or more components of antenna 14 in FIG. For example, a single antenna can be configured to provide both transmission and reception functionality. In another example, transmission and reception functionality may be provided by separate antennas. In yet another example, different frequency bands associated with the wireless device 11 can be provided with different antennas.

在圖2中,來自該收發器13之一或多個輸出信號被描繪為經由一或多個傳輸路徑15提供給該天線14。在所示實例中,不同的傳輸路徑15可表示與不同的頻帶及/或不同的功率輸出相關聯之輸出路徑。例如,所示之兩個例示性功率放大器17可表示與不同的功率輸出組態 (例如,低功率輸出及高功率輸出)相關聯之放大及/或與不同的頻帶相關聯之放大。雖然圖2圖解說明使用兩個傳輸路徑15及兩個功率放大器17之一組態,但是該無線器件11可經調適以包含更多或更少傳輸路徑15及/或更多或更少功率放大器17。 In FIG. 2, one or more output signals from the transceiver 13 are depicted as being provided to the antenna 14 via one or more transmission paths 15. In the illustrated example, different transmission paths 15 may represent output paths associated with different frequency bands and/or different power outputs. For example, the two exemplary power amplifiers 17 shown can represent different power output configurations (eg, low power output and high power output) associated amplification and/or amplification associated with different frequency bands. Although FIG. 2 illustrates the configuration using one of two transmission paths 15 and two power amplifiers 17, the wireless device 11 can be adapted to include more or fewer transmission paths 15 and/or more or fewer power amplifiers. 17.

在圖2中,來自該天線14之一或多個偵測信號被描繪為經由一或多個接收路徑16提供給該收發器13。在所示實例中,不同的接收路徑16可表示與不同的頻帶相關聯之路徑。例如,所示之四個例示性路徑16可表示一些無線器件所具備之四頻帶能力。雖然圖2圖解說明使用四個接收路徑16之一組態,但是該無線器件11可經調適以包含更多或更少接收路徑16。 In FIG. 2, one or more detection signals from the antenna 14 are depicted as being provided to the transceiver 13 via one or more receive paths 16. In the illustrated example, different receive paths 16 may represent paths associated with different frequency bands. For example, the four exemplary paths 16 shown may represent the four-band capabilities of some wireless devices. Although FIG. 2 illustrates the configuration using one of the four receive paths 16, the wireless device 11 can be adapted to include more or fewer receive paths 16.

為促進接收路徑與傳輸路徑之間的切換,該等切換器12可經組態以將該天線14電連接至一選定傳輸或接收路徑。因此,該等切換器12可提供與該無線器件11之操作相關聯之數個切換功能性。在某些實施例中,該等切換器12可包含經組態以提供與(例如)不同頻帶之間的切換、不同功率模式之間的切換、傳輸模式與接收模式之間的切換或其等之某種組合相關聯之功能性之數個切換器。該等切換器12亦可經組態以提供包含信號之過濾及/或雙工之額外功能性。 To facilitate switching between the receive path and the transmit path, the switches 12 can be configured to electrically connect the antenna 14 to a selected transmission or receive path. Thus, the switches 12 can provide a number of switching functionality associated with the operation of the wireless device 11. In some embodiments, the switches 12 can include configurations to provide for switching between, for example, different frequency bands, switching between different power modes, switching between transmission modes and reception modes, or the like A number of switches associated with some combination of functionality. The switches 12 can also be configured to provide additional functionality including filtering and/or duplexing of the signals.

圖2展示在某些實施例中,可提供一控制組件18以控制與該等切換器12、該等功率放大器17、該波封追蹤器30及/或其他操作組件之操作相關聯之各種控制功能性。 2 shows that in some embodiments, a control component 18 can be provided to control various controls associated with the operation of the switches 12, the power amplifiers 17, the envelope tracker 30, and/or other operational components. Feature.

在某些實施例中,一處理器20可經組態以促進本文所述之各種程序的實施。該處理器20可實施各種電腦程式指令。該處理器20可為一般用途電腦、特殊用途電腦或其他可程式化資料處理裝置。 In some embodiments, a processor 20 can be configured to facilitate the implementation of the various programs described herein. The processor 20 can implement various computer program instructions. The processor 20 can be a general purpose computer, a special purpose computer or other programmable data processing device.

在某些實施例中,此等電腦程式指令亦可儲存於可引導該處理器20以一特定方式操作之一電腦可讀記憶體19中,使得該等指令儲存於該電腦可讀記憶體19中。 In some embodiments, the computer program instructions can also be stored in a computer readable memory 19 that can boot the processor 20 in a particular manner such that the instructions are stored in the computer readable memory 19 in.

該經圖解說明之無線器件11亦包含波封追蹤器30,其可用以對該等功率放大器17之一或多者提供一功率放大器供應電壓。例如,該波封追蹤器30可經組態以基於待放大之RF信號之一波封改變提供給該等功率放大器17之供應電壓。在經圖解說明之實施方案中,該波封信號係自該收發器13提供給該波封追蹤器30。然而,其他實施方案係可行的,包含例如其中該波封信號係自一基頻帶處理器或一電力管理積體電路(PMIC)提供給該波封追蹤器30之組態。此外,在某些實施方案中,該波封信號可藉由使用任何合適的波封偵測器偵測RF信號的波封而由該RF信號產生。 The illustrated wireless device 11 also includes a wave seal tracker 30 that can be used to provide a power amplifier supply voltage to one or more of the power amplifiers 17. For example, the envelope tracker 30 can be configured to vary the supply voltage provided to the power amplifiers 17 based on one of the RF signals to be amplified. In the illustrated embodiment, the envelope signal is provided from the transceiver 13 to the envelope tracker 30. However, other implementations are possible, including, for example, where the envelope signal is provided to the envelope tracker 30 from a baseband processor or a power management integrated circuit (PMIC). Moreover, in some embodiments, the envelope signal can be generated from the RF signal by detecting the envelope of the RF signal using any suitable wave seal detector.

該波封追蹤器30可電連接至電池21,該電池21可為用於該無線器件11中之任何合適的電池,包含例如一鋰離子電池。如下文將進一步詳細描述,藉由控制提供給該等功率放大器17之一或多者之電壓,可減小該電池21消耗之電力,藉此改良該無線器件11之電池壽命。 The envelope tracker 30 can be electrically coupled to a battery 21, which can be any suitable battery for use in the wireless device 11, including, for example, a lithium ion battery. As will be described in further detail below, by controlling the voltage supplied to one or more of the power amplifiers 17, the power consumed by the battery 21 can be reduced, thereby improving the battery life of the wireless device 11.

圖3A係包含一波封追蹤器30之一功率放大器系統26之一實例之一示意方塊圖。經圖解說明之功率放大器系統26包含切換器12、天線14、電池21、一定向耦合器24、波封追蹤器30、一功率放大器32及一收發器33。該經圖解說明之收發器33包含一基頻帶處理器34、一波封塑形區塊35、一數位轉類比轉換器(DAC)36、一I/O調變器37、一混合器38及一類比轉數位轉換器(ADC)39。 3A is a schematic block diagram of one example of a power amplifier system 26 that includes a wave seal tracker 30. The illustrated power amplifier system 26 includes a switch 12, an antenna 14, a battery 21, a directional coupler 24, a wave seal tracker 30, a power amplifier 32, and a transceiver 33. The illustrated transceiver 33 includes a baseband processor 34, a wave shaped block 35, a digital to analog converter (DAC) 36, an I/O modulator 37, a mixer 38, and A type of analog-to-digital converter (ADC) 39.

該基頻帶處理器34可用以產生一I信號及一Q信號,該等信號對應於一所要振幅、頻率及相位之一正弦波或信號之信號分量。例如,該I信號可用以表示該正弦波之一同相分量,且該Q信號可用以表示該正弦波之一正交分量,此可為該正弦波之一等效表示。在某些實施方案中,該等I及Q信號可以一數位格式提供給該I/O調變器37。該基頻帶處理器34可為經組態以處理一基頻信號之任何合適的處理器。例如,該基頻帶處理器34可包含一數位信號處理器、一微處理器、一可 程式化核心或其等之任何組合。此外,在一些實施方案中,該功率放大器系統26中可包含兩個或更多個基頻帶處理器34。 The baseband processor 34 can be used to generate an I signal and a Q signal corresponding to a signal component of a sine wave or signal of a desired amplitude, frequency and phase. For example, the I signal can be used to represent one of the sinusoidal in-phase components, and the Q signal can be used to represent one of the sinusoidal orthogonal components, which can be an equivalent representation of one of the sinusoids. In some embodiments, the I and Q signals can be provided to the I/O modulator 37 in a digital format. The baseband processor 34 can be any suitable processor configured to process a baseband signal. For example, the baseband processor 34 can include a digital signal processor, a microprocessor, and a Stylized core or any combination of the same. Moreover, in some embodiments, two or more baseband processors 34 may be included in the power amplifier system 26.

該I/O調變器37可經組態以自該基頻帶處理器34接收該等I及Q信號且處理該等I及Q信號以產生一RF信號。例如,該I/O調變器37可包含經組態以將該等I及Q信號轉變為一類比格式之DAC、用於將該等I及Q信號升頻轉換為射頻之混合器及用於將該等經升頻轉換之I及Q信號組合為適合於藉由該功率放大器32放大之一RF信號之一信號組合器。在某些實施方案中,該I/O調變器37可包含一或多個濾波器,該一或多個濾波器經組態以過濾於其中處理之信號之頻率成分(frequency content)。 The I/O modulator 37 can be configured to receive the I and Q signals from the baseband processor 34 and process the I and Q signals to produce an RF signal. For example, the I/O modulator 37 can include a mixer configured to convert the I and Q signals into an analog format, a mixer for upconverting the I and Q signals to a radio frequency, and The upconverted I and Q signals are combined into a signal combiner suitable for amplifying one of the RF signals by the power amplifier 32. In some embodiments, the I/O modulator 37 can include one or more filters configured to filter the frequency content of the signal processed therein.

該波封塑形區塊35可用以將與I及Q信號相關聯之波封或振幅資料轉換為經塑形之波封資料。塑形來自該基頻帶處理器34之波封資料可藉由(例如)調整該波封信號以最佳化該功率放大器32之線性度及/或達成該功率放大器32之一所要增益壓縮來輔助增強該功率放大器系統26之效能。在某些實施方案中,該波封塑形區塊35係一數位區塊,且該DAC 36係用以將經塑形之波封資料轉換為適用於由該波封追蹤器30使用之一類比波封信號。然而,在其他實施方案中,可省略該DAC 36以有利於將一數位波封信號提供給該波封追蹤器30以輔助該波封追蹤器30進一步處理該波封信號。 The wave shaped shaped block 35 can be used to convert the envelope or amplitude data associated with the I and Q signals into shaped wave seal data. Shaping data from the baseband processor 34 can be assisted by, for example, adjusting the envelope signal to optimize linearity of the power amplifier 32 and/or achieve desired gain compression of one of the power amplifiers 32. The performance of the power amplifier system 26 is enhanced. In some embodiments, the wave shaped shaped block 35 is a digital block and the DAC 36 is used to convert the shaped wave seal data into one suitable for use by the wave seal tracker 30. Analog wave seal signal. However, in other embodiments, the DAC 36 can be omitted to facilitate providing a digital envelope signal to the envelope tracker 30 to assist the envelope tracker 30 in further processing the envelope signal.

該波封追蹤器30可自該收發器33接收波封信號且自該電池21接收一電池電壓VBATT,且可使用該波封信號以產生用於該功率放大器32且相對於波封而改變之一功率放大器供應電壓VCC_PA。該功率放大器32可自該收發器33之I/O調變器37接收RF信號,且可透過該等切換器12將一經放大之RF信號提供給該天線14。 The envelope tracker 30 can receive the envelope signal from the transceiver 33 and receive a battery voltage V BATT from the battery 21 and can use the envelope signal to generate for the power amplifier 32 and change with respect to the envelope One of the power amplifiers supplies a voltage V CC — PA . The power amplifier 32 can receive RF signals from the I/O modulator 37 of the transceiver 33 and can provide an amplified RF signal to the antenna 14 via the switches 12.

該定向耦合器24可定位於該功率放大器32之輸出與該等切換器12之一輸入之間,藉此容許該功率放大器32之一輸出功率量測不包含 該等切換器12之插入損失。來自該定向耦合器24之經感測輸出信號可提供給混合器38,該混合器38可以一經控制頻率之一參考信號乘該經感測輸出信號以下頻移該經感測輸出信號之頻譜。該經下頻移之信號可提供給ADC 39,該ADC 39可將該經降頻移位之信號轉換為適用於由該基頻帶處理器34處理之一數位格式。藉由在該功率放大器32之輸出與該基頻帶處理器34之一輸入之間包含一回饋路徑,該基頻帶處理器34可經組態以動態地調整I及Q信號及/或與I及Q信號相關聯之波封資料以最佳化該功率放大器系統26之操作。例如,以此方式組態該功率放大器系統26可輔助控制該功率放大器32之功率附加效率(PAE)及/或線性度。 The directional coupler 24 can be positioned between the output of the power amplifier 32 and one of the inputs of the switches 12, thereby allowing one of the power amplifiers 32 to not include an output power measurement. The insertion loss of these switches 12. The sensed output signal from the directional coupler 24 can be provided to a mixer 38 that can frequency shift the spectrum of the sensed output signal by multiplying the sensed output signal by one of the control frequency reference signals. The down-shifted signal can be provided to an ADC 39 that can convert the down-converted signal into a digital format suitable for processing by the baseband processor 34. The baseband processor 34 can be configured to dynamically adjust the I and Q signals and/or with I and by including a feedback path between the output of the power amplifier 32 and one of the input of the baseband processor 34. The Q-switch associated data is optimized to operate the power amplifier system 26. For example, configuring the power amplifier system 26 in this manner can assist in controlling the power added efficiency (PAE) and/or linearity of the power amplifier 32.

雖然該功率放大器系統26經圖解說明為包含一單個功率放大器,但是本文的教示可應用於包含多個功率放大器之功率放大器系統,包含例如多頻帶及/或多模式功率放大器系統。 Although the power amplifier system 26 is illustrated as including a single power amplifier, the teachings herein are applicable to power amplifier systems including multiple power amplifiers, including, for example, multi-band and/or multi-mode power amplifier systems.

圖3B係包含一波封追蹤器30之一功率放大器系統40之另一實例之一示意方塊圖。該經圖解說明之功率放大器系統40包含波封追蹤器30、功率放大器32、一電感器27、一阻抗匹配區塊31、切換器12及天線14。該經圖解說明之波封追蹤器30經組態以接收RF信號之一波封且使用一電池電壓VBATT產生用於該功率放大器32之一功率放大器供應電壓VCC_PA3B is a schematic block diagram of another example of a power amplifier system 40 that includes a wave seal tracker 30. The illustrated power amplifier system 40 includes a wave seal tracker 30, a power amplifier 32, an inductor 27, an impedance matching block 31, a switch 12, and an antenna 14. The illustrated wave seal tracker 30 is configured to receive a wave seal of one of the RF signals and to generate a power amplifier supply voltage V CC — PA for the power amplifier 32 using a battery voltage V BATT .

該經圖解說明之功率放大器32包含具有一射極、一基極及一集極之一雙極電晶體29。該雙極電晶體29之射極可電連接至一功率低供應電壓V1,其可為(例如)一接地供應(ground supply)。此外,一射頻(RF)信號可提供給該雙極電晶體29之基極。該雙極電晶體29可放大該RF信號以在該集極處產生經放大之RF信號。該雙極電晶體29可為任何合適器件。在一實施方案中,該雙極電晶體29係一異質接面雙極電晶體(HBT)。 The illustrated power amplifier 32 includes a bipolar transistor 29 having an emitter, a base, and a collector. Exit 29 of the bipolar transistor may be electrically connected to the electrode power is a low supply voltage V 1, which may be (e.g.) a ground supply (ground supply). Additionally, a radio frequency (RF) signal can be provided to the base of the bipolar transistor 29. The bipolar transistor 29 amplifies the RF signal to produce an amplified RF signal at the collector. The bipolar transistor 29 can be any suitable device. In one embodiment, the bipolar transistor 29 is a heterojunction bipolar transistor (HBT).

該功率放大器32可經組態以將經放大之RF信號提供給該等切換器12。該阻抗匹配區塊31可用以終止該功率放大器32與該等切換器12之間之電連接,從而可輔助增加功率轉移及/或減小使用該功率放大器32產生之經放大之RF信號之反射。 The power amplifier 32 can be configured to provide an amplified RF signal to the switches 12. The impedance matching block 31 can be used to terminate the electrical connection between the power amplifier 32 and the switches 12 to assist in increasing power transfer and/or reducing the reflection of the amplified RF signal generated using the power amplifier 32. .

可包含該電感器27以在扼制或阻斷高頻RF信號分量的同時使用由該波封追蹤器30產生之功率放大器供應電壓VCC_PA對該功率放大器32供電。該電感器27可包含電連接至該波封追蹤器30之一第一端及電連接至該雙極電晶體29之集極之一第二端。 The inductor 27 can be included to power the power amplifier 32 using the power amplifier supply voltage V CC — PA generated by the envelope tracker 30 while clamping or blocking the high frequency RF signal component. The inductor 27 can include a first end electrically coupled to the wave seal tracker 30 and a second end electrically coupled to the collector of the bipolar transistor 29.

雖然圖3B圖解說明該功率放大器32之一實施方案,但是熟習此項技術者應明白,本文所述教示可應用於多種功率放大器結構,諸如多級功率放大器及採用其他電晶體結構之功率放大器。例如,在一些實施方案中,可省略該雙極電晶體29以採用一場效電晶體(FET),諸如矽FET、砷化鎵(GaAs)高電子遷移率電晶體(HEMT)或一橫向擴散金屬氧化物半導體(LDMOS)電晶體。此外,該功率放大器32可經調適以包含諸如偏壓電路之額外電路。 Although FIG. 3B illustrates one embodiment of the power amplifier 32, it will be apparent to those skilled in the art that the teachings herein can be applied to a variety of power amplifier configurations, such as multi-stage power amplifiers and power amplifiers employing other transistor configurations. For example, in some embodiments, the bipolar transistor 29 can be omitted to employ a field effect transistor (FET), such as a germanium FET, a gallium arsenide (GaAs) high electron mobility transistor (HEMT), or a laterally diffused metal. An oxide semiconductor (LDMOS) transistor. Moreover, the power amplifier 32 can be adapted to include additional circuitry such as a biasing circuit.

圖4A至圖4B展示功率放大器供應電壓對時間之兩個實例。 4A-4B show two examples of power amplifier supply voltage versus time.

在圖4A中,一曲線圖47圖解說明一RF信號41之電壓及一功率放大器供應電壓43對時間之一實例。該RF信號41具有一波封42。 In Fig. 4A, a graph 47 illustrates an example of the voltage of an RF signal 41 and a power amplifier supply voltage 43 versus time. The RF signal 41 has a wave seal 42.

重要的是,一功率放大器之功率放大器供應電壓43可具有大於該RF信號41之電壓之一電壓。例如,使用具有小於該RF信號之量值之一量值之一功率放大器供應電壓對一功率放大器供電可修剪該RF信號,藉此產生信號失真及/或其他問題。因此,重要的是,該功率放大器供應電壓43可大於該波封42之電壓。然而,可期望減小該功率放大器供應電壓43與該RF信號41之波封42之間的電壓差,這係因為該功率放大器供應電壓43與該波封42之間的面積可表示損耗能量,這可減小電池壽命且增加一無線器件中產生的熱。 Importantly, the power amplifier supply voltage 43 of a power amplifier can have a voltage greater than the voltage of the RF signal 41. For example, powering a power amplifier with a power amplifier supply voltage having a magnitude less than one of the magnitudes of the RF signal can trim the RF signal, thereby producing signal distortion and/or other problems. Therefore, it is important that the power amplifier supply voltage 43 can be greater than the voltage of the envelope 42. However, it may be desirable to reduce the voltage difference between the power amplifier supply voltage 43 and the wave seal 42 of the RF signal 41 because the area between the power amplifier supply voltage 43 and the wave seal 42 may represent loss energy, This can reduce battery life and increase the heat generated in a wireless device.

在圖4B中,一曲線圖48圖解說明一RF信號41之電壓及一功率放大器供應電壓44對時間之另一實例。與圖4A之功率放大器供應電壓43相比,圖4B之功率放大器供應電壓44相對於該RF信號41之波封42而改變。圖4B中之功率放大器供應電壓44與波封42之間的面積小於圖4A中之功率放大器供應電壓43與波封42之間的面積,且因此圖4B之曲線圖48可與具有較大能量效率之一功率放大器系統相關聯。 In FIG. 4B, a graph 48 illustrates another example of the voltage of an RF signal 41 and a power amplifier supply voltage 44 versus time. The power amplifier supply voltage 44 of FIG. 4B is varied relative to the wave seal 42 of the RF signal 41 as compared to the power amplifier supply voltage 43 of FIG. 4A. The area between the power amplifier supply voltage 44 and the wave seal 42 in FIG. 4B is smaller than the area between the power amplifier supply voltage 43 and the wave seal 42 in FIG. 4A, and thus the graph 48 of FIG. 4B can be combined with a larger energy. One of the efficiency is associated with a power amplifier system.

波封追蹤系統之概述Overview of the wave seal tracking system

本文揭示用於波封追蹤之裝置及方法。在某些實施例中,提供一種用於產生用於一功率放大器之一功率放大器供應電壓之波封追蹤系統。該波封追蹤系統可包含一降壓轉換器及一誤差放大器,其等經組態以並行操作以基於由功率放大器放大之一RF信號之一波封控制功率放大器供應電壓之電壓位準。該降壓轉換器可經組態以將一電池電壓轉換為一減壓電壓或降壓電壓,且該誤差放大器可藉由使用一快速變化輸出電流調整該減壓電壓之量值而產生功率放大器供應電壓。 Apparatus and methods for wave seal tracking are disclosed herein. In some embodiments, a wave seal tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system can include a buck converter and an error amplifier configured to operate in parallel to control a voltage level of the power amplifier supply voltage based on one of the RF signals amplified by the power amplifier. The buck converter can be configured to convert a battery voltage to a reduced or stepped voltage, and the error amplifier can generate a power amplifier by adjusting the magnitude of the reduced voltage using a rapidly varying output current Supply voltage.

在某些實施方案中,誤差放大器可產生基於誤差放大器的輸出電流之一量值而改變之一誤差電流,且降壓轉換器可基於該誤差電流控制降壓電壓之一量值。使用該誤差電流控制該降壓轉換器可輔助改良波封追蹤系統之總體效率。例如,該誤差放大器可具有小於該降壓轉換器之一功率效率之一功率效率,但具有快於該降壓轉換器之一速度之一速度。因此,組態該降壓轉換器以基於該誤差電流控制該降壓電壓及因此該功率放大器供應電壓可有助於藉由減小該誤差放大器提供之電流量而改良波封追蹤系統之總體功率效率。 In some embodiments, the error amplifier can generate one of the error currents based on the magnitude of the error amplifier's output current, and the buck converter can control one of the step-down voltages based on the error current. Using this error current to control the buck converter can aid in improving the overall efficiency of the envelope tracking system. For example, the error amplifier can have a power efficiency that is less than one of the power efficiencies of the buck converter, but has a speed that is faster than one of the speeds of the buck converter. Therefore, configuring the buck converter to control the buck voltage based on the error current and thus the power amplifier supply voltage can help improve the overall power of the wave seal tracking system by reducing the amount of current provided by the error amplifier effectiveness.

圖5係一波封追蹤系統50之一實施例之一示意方塊圖。該波封追蹤系統50包含電池21、一誤差放大器51、一回饋電路52、一降壓轉換器53及一升壓轉換器54。 5 is a schematic block diagram of one embodiment of a wave seal tracking system 50. The envelope tracking system 50 includes a battery 21, an error amplifier 51, a feedback circuit 52, a buck converter 53, and a boost converter 54.

該誤差放大器51包含:一第一輸入,其經組態以接收一波封信 號(ENVELOPE);一第二輸入,其電連接至該回饋電路52之一第一端子;及一輸出,其電連接至功率放大器供應電壓VCC_PA、該降壓轉換器53之一輸出及該回饋電路52之一第二端子。該誤差放大器51經組態以產生一誤差電流IERROR且將該誤差電流IERROR提供給該降壓轉換器53。 The error amplifier 51 includes: a first input configured to receive a envelope signal (ENVELOPE); a second input electrically coupled to one of the first terminals of the feedback circuit 52; and an output, the electrical Connected to a power amplifier supply voltage V CC — PA , one of the output of the buck converter 53 and a second terminal of the feedback circuit 52 . The error amplifier 51 is configured to generate an error current I ERROR and provide the error current I ERROR to the buck converter 53.

該回饋電路52可為任何合適電路,且可包含主動及/或被動電路。在一實施方案中,該回饋電路52包含電連接在該回饋電路的第一端子與第二端子之間之一電阻器。然而,可使用該回饋電路52之任何合適的實施方案。 The feedback circuit 52 can be any suitable circuit and can include active and/or passive circuits. In one embodiment, the feedback circuit 52 includes a resistor electrically coupled between the first terminal and the second terminal of the feedback circuit. However, any suitable implementation of the feedback circuit 52 can be used.

該升壓轉換器54經組態以自電池21接收一電池電壓VBATT。該升壓轉換器54經組態以產生可具有大於該電池電壓VBATT之一電壓位準之一電壓位準之一升壓電壓VBOOST。如圖5中所示,該升壓電壓VBOOST可用以對該誤差放大器51供電。雖然該升壓轉換器54圖解說明為產生一單個升壓輸出電壓,但是在某些實施方案中,該升壓轉換器54可經組態以產生複數個升壓輸出電壓以將一所要電壓位準之一電源供應器提供給其他組件或電路。 The boost converter 54 is configured to receive a battery voltage V BATT from the battery 21 . The boost converter 54 is configured to generate a boost voltage V BOOST that can have a voltage level greater than one of the battery voltages V BATT . As shown in FIG. 5, the boost voltage V BOOST can be used to power the error amplifier 51. Although the boost converter 54 is illustrated as generating a single boost output voltage, in some embodiments, the boost converter 54 can be configured to generate a plurality of boost output voltages to set a desired voltage level. One of the power supplies is supplied to other components or circuits.

該降壓轉換器53經組態以自電池21接收電池電壓VBATT且自誤差放大器51接收誤差電流IERROR。該降壓轉換器53包含經組態以藉由透過一內部電感器汲入或流出電流至功率放大器供應電壓VCC_PA而控制該功率放大器供應電壓VCC_PA之一電壓位準之一輸出。該降壓轉換器53可用以將該功率放大器供應電壓VCC_PA控制為小於該電池電壓VBATT之一電壓位準之一電壓位準。如下文將進一步詳細描述,該降壓轉換器53可基於該誤差電流IERROR隨時間控制該功率放大器供應電壓VCC_PA之量值。 The buck converter 53 is configured to receive the battery voltage V BATT from the battery 21 and receive the error current I ERROR from the error amplifier 51. The buck converter 53 includes an output configured to control one of the voltage levels of the power amplifier supply voltage V CC — PA by sinking or flowing current through an internal inductor to the power amplifier supply voltage V CC — PA . The buck converter 53 can be used to control the power amplifier supply voltage V CC — PA to a voltage level that is less than one of the voltage levels of the battery voltage V BATT . As will be described in further detail below, the buck converter 53 can control the magnitude of the power amplifier supply voltage V CC — PA over time based on the error current I ERROR .

該經圖解說明之波封追蹤系統50包含降壓轉換器53及誤差放大器51,其等經組態以並行操作以基於波封信號控制該功率放大器供應 電壓VCC_PA之電壓位準。該降壓轉換器53可具有大於該誤差放大器的功率效率之一功率效率,但是具有慢於該誤差放大器的追蹤速度之一追蹤速度。因此,該誤差放大器51可用以提供該波封信號之高頻分量之追蹤,而該降壓轉換器53可用以提供該波封信號之低頻分量之追蹤。在經圖解說明之組態中,使用該升壓電壓VBOOST對該誤差放大器51供電,且因此該誤差放大器51亦可用以控制該功率放大器供應電壓VCC_PA之電壓位準使其高於該電池電壓VBATTThe illustrated wave seal tracking system 50 includes a buck converter 53 and an error amplifier 51 that are configured to operate in parallel to control the voltage level of the power amplifier supply voltage V CC — PA based on the envelope signal. The buck converter 53 can have a power efficiency that is greater than one of the power efficiencies of the error amplifier, but has a tracking speed that is slower than one of the tracking speeds of the error amplifier. Thus, the error amplifier 51 can be used to provide tracking of the high frequency components of the envelope signal, and the buck converter 53 can be used to provide tracking of the low frequency components of the envelope signal. In the illustrated configuration, the error amplifier 51 is powered using the boost voltage V BOOST , and thus the error amplifier 51 can also be used to control the voltage level of the power amplifier supply voltage V CC — PA to be higher than the battery. Voltage V BATT .

在圖5中所示之組態中,該誤差放大器51將該誤差電流IERROR提供給該降壓轉換器53以輔助該降壓轉換器53追蹤波封信號。該誤差電流IERROR可指示該功率放大器供應電壓VCC_PA之一電流或當前電壓位準與該功率放大器供應電壓VCC_PA之一所要電壓位準之間之差。因為該誤差放大器51可具有小於該降壓轉換器53之一功率效率之一功率效率,但是具有快於該降壓轉換器53之一速度之一速度,所以組態該降壓轉換器53以基於該誤差電流IERROR控制該功率放大器供應電壓VCC_PA可有助於藉由減小該誤差放大器51提供之電流量改良波封追蹤系統50之總體功率效率。例如,該誤差電流IERROR可在該誤差放大器51汲入或流出電流至功率放大器供應電壓VCC_PA上時改變,且該降壓轉換器53可隨時間控制該功率放大器供應電壓VCC_PA之電壓位準以減小該誤差電流IERROR及該誤差放大器51之輸出電流之量值。 In the configuration shown in FIG. 5, the error amplifier 51 supplies the error current I ERROR to the buck converter 53 to assist the buck converter 53 in tracking the envelope signal. The error current I ERROR may indicate that the power amplifier supply voltage V CC_PA one current or one voltage level of the power amplifier supply current to the voltage difference between the voltage V CC_PA a desired level. Since the error amplifier 51 can have a power efficiency lower than one of the power efficiencies of the buck converter 53, but has a speed faster than one of the speeds of the buck converter 53, the buck converter 53 is configured to Controlling the power amplifier supply voltage V CC — PA based on the error current I ERROR can help improve the overall power efficiency of the envelope tracking system 50 by reducing the amount of current provided by the error amplifier 51 . For example, the error current I ERROR may change when the error amplifier 51 sinks or flows current to the power amplifier supply voltage V CC — PA , and the buck converter 53 can control the voltage bit of the power amplifier supply voltage V CC — PA with time. The magnitude of the error current I ERROR and the output current of the error amplifier 51 is reduced.

如先前描述,該升壓轉換器54可產生該升壓電壓VBOOST,此可具有大於該電池電壓VBATT之電壓量值之一電壓量值。在該波封追蹤系統50中包含該升壓轉換器54可容許該誤差放大器51將該功率放大器供應電壓VCC_PA控制於高於該電池電壓VBATT之一電壓位準。以此方式組態該波封追蹤系統50可容許使用該波封追蹤系統50供電之一功率放大器驅動一相對較大的負載線阻抗。例如,在該功率放大器放大一相對較大的RF輸入信號時,驅動一大負載線阻抗之一功率放大器在該功 率放大器之輸出處具有相對較大的電壓擺動。因此,組態該波封追蹤系統50以控制該功率放大器供應電壓VCC_PA使其高於該電池電壓VBATT可藉由在不削波或以其他方式失真該功率放大器的輸出信號之情況下允許該功率放大器之輸出信號超過該電池電壓VBATT而增加該功率放大器可驅動之最大負載線阻抗。 As previously described, the boost converter 54 can generate the boost voltage V BOOST , which can have a voltage magnitude greater than the voltage magnitude of the battery voltage V BATT . The inclusion of the boost converter 54 in the envelope tracking system 50 allows the error amplifier 51 to control the power amplifier supply voltage V CC — PA above a voltage level of the battery voltage V BATT . Configuring the envelope tracking system 50 in this manner may allow one of the power amplifiers powered by the envelope tracking system 50 to drive a relatively large load line impedance. For example, when the power amplifier amplifies a relatively large RF input signal, one of the power amplifiers driving a large load line impedance has a relatively large voltage swing at the output of the power amplifier. Therefore, configuring the envelope tracking system 50 to control the power amplifier supply voltage V CC — PA above the battery voltage V BATT can be allowed by not clipping or otherwise distorting the output signal of the power amplifier. The output signal of the power amplifier exceeds the battery voltage V BATT to increase the maximum load line impedance that the power amplifier can drive.

該波封追蹤系統50可提供優於其他波封追蹤方案之數個優點。例如,該波封追蹤系統50可提供相對穩健的波封追蹤同時提供高功率效率。此外,該波封追蹤系統50可具有一相對較小的組件計數,包含(例如)相對較少數目個外部組件,諸如離散電感器。在某些實施方案中,該波封追蹤系統50與一功率放大器整合在諸如一多晶片模組(MCM)之一共同模組上。然而,其他組態亦係可行的。 The envelope tracking system 50 can provide several advantages over other wave seal tracking schemes. For example, the envelope tracking system 50 can provide relatively robust envelope tracking while providing high power efficiency. Moreover, the envelope tracking system 50 can have a relatively small component count including, for example, a relatively small number of external components, such as discrete inductors. In some embodiments, the envelope tracking system 50 is integrated with a power amplifier on a common module such as a multi-chip module (MCM). However, other configurations are also possible.

圖6係一升壓轉換器60之一實施例之一電路圖,該升壓轉換器60可用於(例如)圖5之波封追蹤系統50。該升壓轉換器60包含一升壓電路63及一升壓控制區塊64。該升壓電路63經組態以接收一電池電壓VBATT且提升或增加該電池電壓VBATT之一電壓量值以產生一升壓電壓VBOOST。該升壓控制區塊64包含經組態以接收該升壓電壓VBOOST之一回饋輸入及用於控制該升壓電路63之一控制輸出。 6 is a circuit diagram of one embodiment of a boost converter 60 that can be used, for example, in the envelope tracking system 50 of FIG. The boost converter 60 includes a boost circuit 63 and a boost control block 64. The boost circuit 63 is configured to receive a battery voltage V BATT and boost or increase one of the battery voltages V BATT to generate a boost voltage V BOOST . The boost control block 64 includes a feedback input configured to receive the boost voltage V BOOST and to control a control output of the boost circuit 63.

該升壓電路63包含一電感器65、第一切換器66a及第二切換器66b以及一旁路電容器67。該電感器65包含電連接至該電池電壓VBATT之一第一端及電連接至該第一切換器66a之一第一端及該第二切換器66b之一第一端之一第二端。該第一切換器66a進一步包含電連接至第一或功率低供應電壓V1(其可為(例如)一接地供應)之一第二端。該第二切換器66b進一步包含電連接至升壓電壓VBOOST及電容器67之一第一端之一第二端。該旁路電容器67進一步包含電連接至功率低供應電壓V1之一第二端。該旁路電容器67可用以過濾升壓電壓VBOOST。在某些實施方案中,該旁路電容器67可放置或定位成與該升壓轉換器的負載 相距一相對較短距離。 The booster circuit 63 includes an inductor 65, a first switch 66a and a second switch 66b, and a bypass capacitor 67. The inductor 65 includes a first end electrically connected to the battery voltage V BATT and a first end electrically connected to the first switch 66 a and a second end of the first end of the second switch 66 b . The first switch 66a is electrically connected to the first further comprises a power or low supply voltage V 1 (which may be (e.g.) a grounding supply) end of the second one. The second switch 66b further includes a second end electrically coupled to the boost voltage VBOOST and one of the first ends of the capacitor 67. The bypass capacitor 67 further comprising a power supply connected to the low voltage terminal of a second one 1 V. The bypass capacitor 67 can be used to filter the boost voltage V BOOST . In some embodiments, the bypass capacitor 67 can be placed or positioned a relatively short distance from the load of the boost converter.

該升壓控制區塊64可經組態以控制升壓電路63以產生升壓電壓VBOOST。例如,當該升壓電路63連續操作時,該升壓控制區塊64可藉由在相關聯於該升壓電路63之一第一升壓相位之一組態與相關聯於該升壓電路63之一第二升壓相位之一組態之間有規則地切換該第一切換器66a及該第二切換器66b之狀態而產生該升壓電壓VBOOST。例如,在該升壓電路63之第一升壓相位期間,該升壓控制區塊64可斷開該第二切換器66b且閉合該第一切換器66a以藉由透過該電感器65及該第一切換器66a將一電流自該電池電壓VBATT提供給該功率低供應電壓V1而增加該電感器65之磁場。此外,在該升壓電路63之第二升壓相位期間,該升壓控制區塊64可閉合該第二切換器66b且斷開該第一切換器66a,使得該電感器65之磁場產生透過該電感器65及該第二切換器66b自該電池電壓VBATT至該升壓電壓VBOOST之一電流。 The boost control block 64 can be configured to control the boost circuit 63 to generate a boost voltage V BOOST . For example, when the boost circuit 63 is continuously operated, the boost control block 64 can be associated with the boost circuit by being configured in one of the first boost phases associated with the boost circuit 63. The state of the first switch 66a and the second switch 66b is regularly switched between one of the second boost phase configurations to generate the boost voltage V BOOST . For example, during the first boosting phase of the boost circuit 63, the boost control block 64 can open the second switch 66b and close the first switch 66a to pass through the inductor 65 and the The first switch 66a supplies a current from the battery voltage V BATT to the power low supply voltage V 1 to increase the magnetic field of the inductor 65. In addition, during the second boosting phase of the boosting circuit 63, the boosting control block 64 can close the second switch 66b and open the first switch 66a, so that the magnetic field of the inductor 65 is transmitted through The inductor 65 and the second switch 66b have a current from the battery voltage V BATT to the boost voltage V BOOST .

雖然該升壓電路63被描述為當產生該升壓電壓VBOOST時經由兩個相位操作,但是該升壓電路63可經組態以使用額外相位進行操作。例如,該升壓電路63可經組態以藉由在該第一升壓相位、該第二升壓相位及與斷開該第一切換器66a及該第二切換器66b相關聯之一第三升壓相位之間切換該升壓電路63而間斷地使用該升壓控制區塊64進行操作。 Although the boost circuit 63 is described as operating via two phases when the boost voltage V BOOST is generated, the boost circuit 63 can be configured to operate with an additional phase. For example, the boost circuit 63 can be configured to be associated with one of the first booster phase, the second booster phase, and the first switch 66a and the second switch 66b. The booster circuit 63 is switched between the three boost phases to intermittently operate using the boost control block 64.

雖然圖6圖解說明適用於本文描述之波封追蹤系統中之一升壓轉換器60之一實例,但是亦可使用該升壓轉換器60之其他組態,包含(例如)其中以其他方式連接及/或操作該第一切換器66a及該第二切換器66b之組態。 Although FIG. 6 illustrates an example of one of the boost converters 60 suitable for use in the wave seal tracking system described herein, other configurations of the boost converter 60 may also be used, including, for example, where other connections are made. And/or operating the configuration of the first switch 66a and the second switch 66b.

圖7係一降壓轉換器70之一實施例之一電路圖,該降壓轉換器70可用於(例如)圖5之波封追蹤系統50中。該降壓轉換器70包含一降壓電路73及一降壓控制區塊74。該降壓電路73經組態以接收一電池電壓 VBATT且產生一降壓電壓VBUCK,該降壓電壓VBUCK可具有小於該電池電壓VBATT之電壓量值之一電壓量值。該降壓控制區塊74包含經組態以接收該降壓電壓VBUCK之一回饋輸入、用於接收一誤差電流IERROR之一誤差輸入及用於控制該降壓電路73之一控制輸出。如上文參考圖5描述,該降壓轉換器70可與一誤差放大器並聯電連接以產生一功率放大器供應電壓。因此,在某些實施方案中,經組態以產生降壓電壓VBUCK之降壓轉換器70之輸出係電連接至該功率放大器供應電壓。 7 is a circuit diagram of one embodiment of a buck converter 70 that can be used, for example, in the wave seal tracking system 50 of FIG. The buck converter 70 includes a buck circuit 73 and a buck control block 74. 73 by the step-down circuit configured to receive a battery voltage V BATT and generates a step-down voltage V BUCK, the step-down voltage V BUCK may have one less than the voltage magnitude of the battery voltage V BATT voltage magnitude. The buck control block 74 includes a feedback input configured to receive one of the buck voltages V BUCK , an error input for receiving an error current I ERROR , and a control output for controlling the buck circuit 73 . As described above with reference to Figure 5, the buck converter 70 can be electrically coupled in parallel with an error amplifier to produce a power amplifier supply voltage. Thus, in some embodiments, the output of the buck converter 70 configured to generate the buck voltage V BUCK is electrically coupled to the power amplifier supply voltage.

該降壓電路73包含一電感器75、第一切換器76a及第二切換器76b以及一旁路電容器77。該第一切換器76a包含電連接至電池電壓VBATT之一第一端及電連接至該第二切換器76b之一第一端及該電感器75之一第一端之一第二端。該第二切換器76b進一步包含電連接至功率低供應電壓V1之一第二端。該電感器75進一步包含電連接至降壓電壓VBUCK及旁路電容器77之一第一端之一第二端。該旁路電容器77進一步包含電連接至該功率低供應電壓V1之一第二端。該旁路電容器77可用以過濾該降壓電壓VBUCK。在某些實施方案中,該旁路電容器77可經放置相對靠近或接近該降壓轉換器的負載。 The step-down circuit 73 includes an inductor 75, a first switch 76a and a second switch 76b, and a bypass capacitor 77. The first switch 76a includes a first end electrically coupled to the battery voltage V BATT and a first end electrically coupled to one of the second switch 76b and a second end of the first end of the inductor 75. Which further comprises a second switch 76b is electrically connected to one end of a second low-power supply voltage V. The inductor 75 further includes a second end electrically coupled to the buck voltage V BUCK and one of the first ends of the bypass capacitor 77. The bypass capacitor 77 further comprises a lower electrically connected to the power supply voltage terminal of a second one 1 V. The bypass capacitor 77 can be used to filter the step-down voltage V BUCK . In some embodiments, the bypass capacitor 77 can be placed relatively close to or near the load of the buck converter.

該降壓控制區塊74可經組態以控制該降壓電路73以產生該降壓電壓VBUCK。例如,當該降壓電路73連續操作時,該降壓控制區塊74可藉由在相關聯於該降壓電路73之一第一降壓相位之一組態與相關聯於該降壓電路73之一第二降壓相位之一組態之間有規則地切換該第一切換器76a及該第二切換器76b之狀態而產生該降壓電壓VBUCK。例如,在該降壓電路73之第一降壓相位期間,該降壓控制區塊74可斷開該第二切換器76b且閉合該第一切換器76a以藉由透過該電感器75及該第一切換器76a將一電流自該電池電壓VBATT提供至該降壓電壓VBUCK而對該電感器75之磁場充電。此外,在該降壓電路73之第二降壓相位期間,該降壓控制區塊74可經組態以閉合該第二切換器76b且斷開該 第一切換器76a,使得該電感器75之磁場產生透過該第二切換器76b及該電感器75自該功率低供應電壓V1至該電池電壓VBATT之一電流。 The buck control block 74 can be configured to control the buck circuit 73 to generate the buck voltage V BUCK . For example, when the buck circuit 73 is continuously operated, the buck control block 74 can be associated with the buck circuit by being configured in one of the first buck phases associated with the buck circuit 73. The voltage of the first switch 76a and the second switch 76b is regularly switched between one of the second step-down phases of one of the configurations to generate the step-down voltage V BUCK . For example, during the first step-down phase of the buck circuit 73, the buck control block 74 can open the second switch 76b and close the first switch 76a to pass through the inductor 75 and the The first switch 76a supplies a current from the battery voltage V BATT to the step-down voltage V BUCK to charge the magnetic field of the inductor 75 . Moreover, during the second step-down phase of the buck circuit 73, the buck control block 74 can be configured to close the second switch 76b and open the first switch 76a such that the inductor 75 The magnetic field generates a current from the power low supply voltage V 1 to the battery voltage V BATT through the second switch 76b and the inductor 75.

雖然該降壓電路73被描述為在產生該降壓電壓VBUCK時經由兩個相位操作,但是該降壓電路73可經組態以使用額外相位進行操作。例如,在降壓控制區塊74經組態以在該第一降壓相位、該第二降壓相位及與斷開該第一切換器76a及該第二切換器76b之各者相關聯之一第三升壓相位之間切換該降壓電路73之情況下,該降壓電路73可經組態以間斷地操作。 Although the buck circuit 73 is described as operating via two phases while generating the buck voltage V BUCK , the buck circuit 73 can be configured to operate with additional phases. For example, the buck control block 74 is configured to be associated with each of the first buck phase, the second buck phase, and each of the first switch 76a and the second switch 76b. In the case where the buck circuit 73 is switched between a third boosting phase, the buck circuit 73 can be configured to operate intermittently.

該降壓控制區塊74包含一磁滯電流比較器78,該磁滯電流比較器78可用以基於誤差電流IERROR控制該降壓電路73。如先前關於圖5描述,該誤差電流IERROR可相對於一誤差放大器之一輸出電流而改變。該磁滯電流比較器78可用以基於該誤差電流IERROR控制該降壓電壓VBUCK之一量值以減小該誤差放大器之一輸出電流且改良波封追蹤系統之總體效率。在某些實施方案中,該誤差電流IERROR係一差動誤差電流,且該磁滯電流比較器78經組態以比較該誤差電流IERROR之一正或非反相電流分量與該誤差電流IERROR之一負或反相電流分量,且基於結果控制該降壓電壓VBUCK。該磁滯電流比較器77之額外細節可如下文進一步描述般。 The buck control block 74 includes a hysteresis current comparator 78 that can be used to control the buck circuit 73 based on the error current I ERROR . As previously described with respect to Figure 5, the error current I ERROR can be varied relative to one of the error amplifier output currents. The hysteresis current comparator 78 can be used to control a magnitude of the buck voltage V BUCK based on the error current I ERROR to reduce one of the output currents of the error amplifier and improve the overall efficiency of the envelope tracking system. In some embodiments, the error current I ERROR is a differential error current, and the hysteresis current comparator 78 is configured to compare one of the positive or non-inverted current components of the error current I ERROR with the error current One of the I ERROR negative or inverted current components, and the buck voltage V BUCK is controlled based on the result. Additional details of the hysteresis current comparator 77 can be as described further below.

雖然圖7圖解說明適用於本文描述之波封追蹤系統中之一降壓轉換器70之一實例,但是亦可使用其他降壓轉換器組態。 Although FIG. 7 illustrates one example of a buck converter 70 suitable for use in the wave seal tracking system described herein, other buck converter configurations may be used.

圖8係一磁滯電流比較器80之一實施例之一電路圖,該磁滯電流比較器80可用於(例如)圖7之降壓轉換器70中。該磁滯電流比較器80包含第一n型場效電晶體(NFET)81至第九n型場效電晶體(NFET)89及第一p型場效電晶體(PFET)91至第四p型場效電晶體(PFET)94。該磁滯電流比較器80經組態以接收一參考電流IREF及一差動誤差電流IERROR+、IERROR-,且產生可用以控制一降壓轉換器之一輸出信號 OUT。該差動誤差電流IERROR+、IERROR-可對應於一正或非反相誤差電流IERROR+與一負或反相誤差電流IERROR-之間之差。 8 is a circuit diagram of one embodiment of a hysteresis current comparator 80 that can be used, for example, in buck converter 70 of FIG. The hysteresis current comparator 80 includes a first n-type field effect transistor (NFET) 81 to a ninth n-type field effect transistor (NFET) 89 and a first p-type field effect transistor (PFET) 91 to a fourth p Type field effect transistor (PFET) 94. The hysteresis current comparator 80 is configured to receive a reference current I REF and a differential error current I ERROR+ , I ERROR- and generate an output signal OUT that can be used to control one of the buck converters. The differential error currents I ERROR+ , I ERROR- may correspond to a difference between a positive or non-inverted error current I ERROR+ and a negative or inverted error current I ERROR- .

該第一NFET 81包含經組態以接收該參考電流IREF之一汲極。該第一NFET 81之汲極電連接至該第一NFET 81之一閘極及第二NFET 82之一閘極。第二NFET 82進一步包含電連接至該第一PFET 91之一汲極之一汲極。該第一NFET 81及該第二NFET 82各包含電連接至功率低供應電壓V1(其可為(例如)一接地供應)之一源極。第三NFET 83包含經組態以接收負誤差電流IERROR之一汲極。該第三NFET 83之汲極電連接至該第三NFET 83之一閘極及第四NFET 84之一閘極。該第四NFET 84進一步包含電連接至第一PFET 91之一閘極、第二PFET 92之一閘極及一汲極、第七NFET 87之一汲極、第三PFET 93之一汲極、第九NFET 89之一閘極及第四PFET 94之一閘極之一汲極。該第三NFET 83及該第四NFET 84各進一步包含電連接至該功率低供應電壓V1之一源極。該第一PFET 91及該第二PFET 92各進一步包含電連接至一第二或功率高供應電壓V2之一源極。在某些實施方案中,該功率高供應電壓V2係由一升壓轉換器產生之一升壓電壓。然而,在其他實施方案中,該功率高供應電壓V2可為諸如一電池電壓之其他電壓。 The first NFET 81 includes a drain configured to receive the reference current I REF . The drain of the first NFET 81 is electrically coupled to one of the gates of the first NFET 81 and one of the gates of the second NFET 82. The second NFET 82 further includes a drain electrically connected to one of the drains of one of the first PFETs 91. The first NFET 81 and the second NFET 82 each comprise a source electrically coupled to a low power supply voltage V 1 (which may be, for example, a ground supply). The third NFET 83 includes one of the drains configured to receive a negative error current I ERROR . The drain of the third NFET 83 is electrically coupled to one of the gates of the third NFET 83 and one of the gates of the fourth NFET 84. The fourth NFET 84 further includes a gate electrically connected to one of the first PFETs 91, one gate and one drain of the second PFET 92, one of the drains of the seventh NFET 87, and one of the drains of the third PFET 93. One of the gates of the ninth NFET 89 and one of the gates of the fourth PFET 94 is a drain. The third NFET 83 and the fourth NFET 84 each further include a source electrically connected to one of the power low supply voltages V 1 . The first PFET 91 and the second PFET 92 each further include a source electrically coupled to a second or power high supply voltage V 2 . In certain embodiments, the power supply voltage V 2 is high based produce one of the boosted voltage by a boost converter. However, in other embodiments, the high power supply voltage V 2 can be other voltages such as a battery voltage.

第五NFET 85包含經組態以接收正誤差電流IERROR+之一汲極。該第五NFET 85之汲極電連接至該第五NFET 85之一閘極及第六NFET 86之一閘極。該第六NFET 86進一步包含電連接至第七NFET 87之一源極及第八NFET 88之一源極之一汲極。該第五NFET 85及該第六NFET 86各進一步包含電連接至該功率低供應電壓V1之一源極。該第七NFET 87進一步包含電連接至一偏壓電壓VBIAS之一閘極。在一實施方案中,該偏壓電壓VBIAS經偏壓具有選擇為處於約2.2 V至約3.6 V之範圍中之一電壓位準。然而,一般技術者應容易確定其他合適的電壓值,包含(例如)與一特定應用及/或製造程序相關聯之電壓值。 The fifth NFET 85 includes one of the drains configured to receive a positive error current I ERROR+ . The drain of the fifth NFET 85 is electrically coupled to one of the gates of the fifth NFET 85 and one of the gates of the sixth NFET 86. The sixth NFET 86 further includes a drain electrically connected to one of the source of the seventh NFET 87 and one of the sources of the eighth NFET 88. The fifth NFET 85 and the sixth NFET 86 each further include a source electrically connected to one of the power low supply voltages V 1 . The seventh NFET 87 further includes a gate electrically coupled to a bias voltage V BIAS . In one embodiment, the bias voltage V BIAS is biased to have a voltage level selected to be in a range from about 2.2 V to about 3.6 V. However, one of ordinary skill should readily determine other suitable voltage values, including, for example, voltage values associated with a particular application and/or manufacturing process.

該第八NFET 88進一步包含電連接至該功率高供應電壓V2之一汲極及在經組態以產生該輸出信號OUT之一節點處電連接至該第三PFET 93之一閘極、該第四PFET 94之一汲極及該第九NFET 89之一汲極之一閘極。該第九NFET 89進一步包含電連接至該功率低供應電壓V1之一源極,且該第四PFET 94進一步包含電連接至該功率高供應電壓V2之一源極。 The eighth NFET 88 further includes a gate electrically coupled to the one of the power high supply voltages V 2 and electrically coupled to one of the gates of the third PFET 93 at a node configured to generate the output signal OUT One of the drains of one of the fourth PFETs 94 and one of the drains of one of the ninth NFETs 89. The NFET 89 further comprising a ninth electrically connected to the lower power supply voltage source V 1, one electrode, and the fourth PFET 94 further comprising electrically coupled to the high power supply voltage source V 2, one electrode.

該輸出信號OUT可相對於差動誤差電流IERROR+、IERROR-而改變。例如,當正誤差電流IERROR+相對較大時,該第九NFET 89及該第四PFET 94之閘極之電壓可被拉高且該第九NFET 89及該第四PFET 94可將該輸出信號OUT控制為邏輯低。此外,當負誤差電流IERROR-相對較大時,該第九NFET 89及該第四PFET 94之閘極之電壓可被拉低且該第九NFET 89及該第四PFET 94可將該輸出信號OUT控制為邏輯高。因此,該輸出信號OUT可追蹤該差動誤差電流IERROR+、IERROR-。雖然經圖解說明之組態圖解說明該輸出信號OUT之一組態,但是本文中的教示可適用於其中反轉該輸出信號OUT之極性之組態。 The output signal OUT can be varied with respect to the differential error currents I ERROR+ , I ERROR- . For example, when the positive error current I ERROR+ is relatively large, the voltages of the gates of the ninth NFET 89 and the fourth PFET 94 may be pulled high and the ninth NFET 89 and the fourth PFET 94 may output the signal The OUT control is logic low. Further, when the relative error current I ERROR- negative large, the ninth voltage NFET gate 89 of the PFET 94 and the fourth electrode of the ninth and can be pulled down NFET 89 and the PFET 94 may be the fourth output The signal OUT is controlled to a logic high. Therefore, the output signal OUT can track the differential error currents I ERROR+ , I ERROR- . Although the illustrated configuration illustrates one configuration of the output signal OUT, the teachings herein are applicable to configurations in which the polarity of the output signal OUT is inverted.

所圖解說明之磁滯電流比較器80採用磁滯以防止該輸出信號OUT回應於該差動誤差電流IERROR+、IERROR-之相對較小波動而改變狀態。例如,第八NFET 88及第三PFET 93可提供磁滯。 The illustrated hysteresis current comparator 80 employs hysteresis to prevent the output signal OUT from changing state in response to relatively small fluctuations in the differential error currents I ERROR+ , I ERROR- . For example, the eighth NFET 88 and the third PFET 93 can provide hysteresis.

雖然圖8圖解說明用於圖7之降壓轉換器70中之一磁滯電流比較器80之一實例,但是亦可使用磁滯電流比較器80之其他實施方案,包含具有以其他方式配置之電晶體之配置。此外,在一些實施方案中,可省略該磁滯電流比較器80而有利於以其他方式(諸如藉由使用一低通濾波器)控制降壓轉換器。 Although FIG. 8 illustrates one example of a hysteresis current comparator 80 for use in the buck converter 70 of FIG. 7, other embodiments of the hysteresis current comparator 80 may be used, including having other configurations. The configuration of the transistor. Moreover, in some embodiments, the hysteresis current comparator 80 can be omitted to facilitate control of the buck converter in other ways, such as by using a low pass filter.

圖9係一誤差放大器100之一實施例之一電路圖,該誤差放大器100可用於(例如)圖5之波封追蹤系統50中。該誤差放大器100包含第一NFET 101至第八NFET 108、第一PFET 111至第九PFET 119及一偏 壓電路120。該誤差放大器100經組態以接收一差動輸入電壓VIN+、VIN-以產生一輸出電壓VOUT,且產生一差動誤差電流IERROR+、IERROR-。該差動輸入電壓VIN+、VIN-可與一正或第一輸入電壓VIN+與一負或第二輸入電壓VIN-之間之差相關聯。 9 is a circuit diagram of one embodiment of an error amplifier 100 that can be used, for example, in the wave seal tracking system 50 of FIG. The error amplifier 100 includes a first NFET 101 to an eighth NFET 108, first to ninth PFETs 119, and a bias circuit 120. The error amplifier 100 is configured to receive a differential input voltage V IN+ , V IN- to generate an output voltage V OUT and to generate a differential error current I ERROR+ , I ERROR- . The differential input voltages V IN+ , V IN- can be associated with a difference between a positive or first input voltage V IN+ and a negative or second input voltage V IN- .

第一PFET 111包含經組態以接收該正輸入電壓VIN+之一閘極及電連接至第二PFET 112之一源極及第三PFET 113之一汲極之一源極。第一PFET 111進一步包含電連接至第一NFET 101之一汲極、第三NFET 103之一汲極及第五NFET 105之一源極之一汲極。第二PFET 112進一步包含經組態以接收負輸入電壓VIN-之一閘極及電連接至第二NFET 102之一汲極、第四NFET 104之一汲極及第六NFET 106之一源極之一汲極。第三PFET 113進一步包含經組態以接收一第一偏壓電壓VBIAS1之一閘極及電連接至功率高供應電壓V2之一源極。第一NFET 101進一步包含在經組態以接收一第二偏壓電壓VBIAS2之一節點處電連接至第二NFET 102之一閘極、第三NFET 103之一閘極及第四NFET 104之一閘極之一閘極。第一NFET 101至第四NFET 104各自進一步包含電連接至功率低供應電壓V1之一源極。 The first PFET 111 includes a gate configured to receive the positive input voltage V IN+ and is electrically coupled to one of the source of the second PFET 112 and one of the drains of one of the third PFETs 113. The first PFET 111 further includes a drain electrically connected to one of the first NFET 101, one of the third NFET 103, and one of the source of the fifth NFET 105. The second PFET 112 further includes a gate configured to receive a negative input voltage V IN- and a source electrically coupled to one of the second NFET 102, one of the fourth NFET 104, and one of the sixth NFET 106 One of the poles. The third PFET 113 further includes a source configured to receive a gate of a first bias voltage V BIAS1 and to electrically connect to one of the power supply voltages V 2 . The first NFET 101 is further configured to be electrically coupled to one of the gates of the second NFET 102, one of the gates of the third NFET 103, and the fourth NFET 104 at a node configured to receive a second bias voltage V BIAS2 One of the gates of a gate. Each of the first NFET 101 to the fourth NFET 104 further includes a source electrically connected to one of the power low supply voltages V 1 .

第五NFET 105進一步包含在經組態以接收一第三偏壓電壓VBIAS3之一節點處電連接至第六NFET 106之一閘極之一閘極。第五NFET 105進一步包含電連接至第六PFET 116之一閘極、第七PFET 117之一閘極及第四PFET 114之一汲極之一汲極。第四PFET 114進一步包含在經組態以接收一第四偏壓電壓VBIAS4之一節點處電連接至第五PFET 115之一閘極之一閘極。第四PFET 114進一步包含電連接至第六PFET 116之一汲極之一源極。第六PFET 116及第七PFET 117各自進一步包含電連接至功率高供應電壓V2之一源極。第七PFET 117進一步包含電連接至第五PFET 115之一源極之一汲極。第五PFET 115進一步包含電連接至第八PFET 118之一閘極、第九PFET 119之一閘極及偏壓電路 120之一第一端子之一汲極。 The fifth NFET 105 is further configured to be electrically coupled to one of the gates of one of the sixth NFETs 106 at a node configured to receive a third bias voltage V BIAS3 . The fifth NFET 105 further includes a gate electrically connected to one of the sixth PFET 116, one of the seventh PFET 117, and one of the drains of the fourth PFET 114. The fourth PFET 114 further includes a gate electrically coupled to one of the gates of the fifth PFET 115 at one of the nodes configured to receive a fourth bias voltage V BIAS4 . The fourth PFET 114 further includes a source electrically coupled to one of the drains of the sixth PFET 116. The sixth PFET 116 and the seventh PFET 117 each further include a source electrically connected to one of the power high supply voltages V 2 . The seventh PFET 117 further includes a drain electrically connected to one of the sources of the fifth PFET 115. The fifth PFET 115 further includes a gate electrically connected to one of the eighth PFET 118, one of the ninth PFET 119, and one of the first terminals of the bias circuit 120.

第八PFET 118進一步包含電連接至第七NFET 107之一汲極且經組態以產生輸出電壓VOUT之一汲極。第九PFET 119進一步包含經組態以產生正誤差電流IERROR+之一汲極。第八PFET 118及第九PFET 119各自進一步包含電連接至功率高供應電壓V2之一源極。第八NFET 108進一步包含經組態以產生負誤差電流IERROR-之一汲極及電連接至第七NFET 107之一閘極、第六NFET 106之一汲極及偏壓電路120之一第二端子之一閘極。第七NFET 107及第八NFET 108各自進一步包含電連接至功率低供應電壓V1之一源極。 The eighth PFET 118 further includes a drain electrically connected to one of the seventh NFETs 107 and configured to generate one of the output voltages V OUT . The ninth PFET 119 further includes one of the gates configured to generate a positive error current I ERROR+ . The eighth PFET 118 and the ninth PFET 119 each further include a source electrically connected to one of the power high supply voltages V 2 . Further comprising an eighth NFET 108 configured to generate one of the error current I ERROR- negative electrode and the drain is electrically connected to one of the seventh NFET gate 107, a sixth one of NFET 106 and the drain bias circuit 120, one One of the gates of the second terminal. Seventh NFET 107 and NFET 108 are each further comprising an eighth power supply connected to the low voltage source V 1, one electrode.

該偏壓電路120可為任何合適的偏壓電路。例如,在一些實施方案中,該偏壓電路120包含與安置在該偏壓電路120之第一端子與第二端子之間之PFET及NFET之通道並聯電連接之一PFET及一NFET。然而,可使用該偏壓電路120之其他組態。 The biasing circuit 120 can be any suitable biasing circuit. For example, in some embodiments, the biasing circuit 120 includes a PFET and an NFET electrically coupled in parallel with the PFET and NFET channels disposed between the first terminal and the second terminal of the biasing circuit 120. However, other configurations of the biasing circuit 120 can be used.

該誤差放大器100可用以放大差動輸入電壓VIN+、VIN-以產生該輸出電壓VOUT。例如,第一PFET 111及第二PFET 112可操作為一差動電晶體對,且第一NFET 101至第六NFET 106及第四PFET 114至第七PFET 117可操作為一折疊級聯放大結構。此外,第七NFET 107及第八PFET 118可操作為該誤差放大器100之一輸出級。 The error amplifier 100 can be used to amplify the differential input voltages V IN+ , V IN- to produce the output voltage V OUT . For example, the first PFET 111 and the second PFET 112 can operate as a differential transistor pair, and the first NFET 101 to the sixth NFET 106 and the fourth PFET 114 to the seventh PFET 117 can operate as a folded cascade amplification structure. . Further, the seventh NFET 107 and the eighth PFET 118 are operable as one of the output stages of the error amplifier 100.

如圖9中所示,第八NFET 108及第九PFET 119可經組態以分別接收第七NFET 107及第八PFET 118之閘極電壓。由於第七NFET 107及第八PFET 118可操作為該誤差放大器100之一輸出級,故以此方式電連接第八NFET 108及第九PFET 119之閘極可用以產生追蹤該誤差放大器100之輸出電流之一差動誤差電流IERROR+、IERROR-。在某些實施方案中,第八NFET 108係第七NFET 107之一複本電晶體,且第九PFET 119係第八PFET 118之一複本電晶體。例如,在實施例中,第八NFET 108及第九PFET 119之寬度經選擇分別比第七NFET 107及第八 PFET 118之寬度小約100倍至約200倍之間。然而,一般技術者應容易確定其他合適的寬度。 As shown in FIG. 9, the eighth NFET 108 and the ninth PFET 119 can be configured to receive the gate voltages of the seventh NFET 107 and the eighth PFET 118, respectively. Since the seventh NFET 107 and the eighth PFET 118 are operable as one of the output stages of the error amplifier 100, the gates of the eighth NFET 108 and the ninth PFET 119 are electrically connected in this manner to generate an output that tracks the error amplifier 100. One of the current differential error currents I ERROR+ , I ERROR- . In some embodiments, the eighth NFET 108 is a replica transistor of the seventh NFET 107 and the ninth PFET 119 is a replica transistor of the eighth PFET 118. For example, in an embodiment, the widths of the eighth NFET 108 and the ninth PFET 119 are selected to be between about 100 times and about 200 times less than the widths of the seventh NFET 107 and the eighth PFET 118, respectively. However, the average technician should be able to easily determine other suitable widths.

第一偏壓電壓VBIAS1至第四偏壓電壓VBIAS4可為任何合適電壓。在一實施方案中,該第一偏壓電壓VBIAS1具有經選擇在約2 V至約3.8 V之範圍中之一電壓位準,該第二偏壓電壓VBIAS2具有經選擇在約0.6 V至約1 V之範圍中之一電壓位準,該第三偏壓電壓VBIAS3具有經選擇在約2.2 V至約3.6 V之範圍中之一電壓位準,且該第四偏壓電壓VBIAS4具有經選擇在約2.4 V至約3.8 V之範圍中之一電壓位準。然而,一般技術者應容易確定其他電壓,包含(例如)與一特定應用及/或程序相關聯之電壓位準。 The first bias voltage V BIAS1 to the fourth bias voltage V BIAS4 may be any suitable voltage. In one embodiment, the first bias voltage V BIAS1 has a voltage level selected to be in a range from about 2 V to about 3.8 V, the second bias voltage V BIAS2 having a selectivity of about 0.6 V to a voltage level in a range of about 1 V, the third bias voltage V BIAS3 having a voltage level selected to be in a range of about 2.2 V to about 3.6 V, and the fourth bias voltage V BIAS4 has One of the voltage levels in the range of about 2.4 V to about 3.8 V is selected. However, one of ordinary skill should readily determine other voltages, including, for example, voltage levels associated with a particular application and/or program.

雖然圖9圖解說明適用於與本文描述之波封追蹤系統一起使用之一誤差放大器之一實例,但是亦可使用根據本文描述之波封追蹤方案之其他誤差放大器組態。 Although FIG. 9 illustrates one example of an error amplifier suitable for use with the wave seal tracking system described herein, other error amplifier configurations in accordance with the wave seal tracking scheme described herein may also be used.

圖10係一波封追蹤系統130之另一實施例之一示意方塊圖。該波封追蹤系統130包含電池21、誤差放大器51、回饋電路52及降壓轉換器53。 10 is a schematic block diagram of another embodiment of a envelope tracking system 130. The envelope tracking system 130 includes a battery 21, an error amplifier 51, a feedback circuit 52, and a buck converter 53.

圖10之波封追蹤系統130類似於圖5之波封追蹤系統50,惟圖10之波封追蹤系統130圖解說明其中已省略圖5之升壓轉換器54以有利於使用電池電壓VBATT對誤差放大器51供電之一組態除外。以此方式組態該波封追蹤系統130可藉由降低諸如電感器之數目之組件計數而減小該波封追蹤系統的複雜性。然而,以此方式組態該波封追蹤系統130亦可減小該波封追蹤系統130可控制功率放大器供應電壓VCC_PA之最大電壓位準。例如,如先前關於圖5描述,當一功率放大器驅動一相對較大負載阻抗時,該功率放大器可使用一相對較大的最大功率放大器供應電壓。因此,該波封追蹤系統130可適用於對驅動一相對較小負載線阻抗(諸如小於或等於5 Ω之一負載線阻抗)之一或多個功率 放大器供電。該功率放大器系統130之額外細節可類似於先前關於圖5之功率放大器系統50描述之細節。 The envelope seal tracking system 130 of FIG. 10 is similar to the envelope seal tracking system 50 of FIG. 5, except that the envelope seal tracking system 130 of FIG. 10 illustrates that the boost converter 54 of FIG. 5 has been omitted to facilitate use of the battery voltage V BATT pair Except for one configuration of the error amplifier 51 power supply. Configuring the envelope tracking system 130 in this manner can reduce the complexity of the envelope tracking system by reducing component counts such as the number of inductors. However, configuring the envelope tracking system 130 in this manner can also reduce the maximum voltage level at which the envelope tracking system 130 can control the power amplifier supply voltage V CC — PA . For example, as previously described with respect to FIG. 5, when a power amplifier drives a relatively large load impedance, the power amplifier can use a relatively large maximum power amplifier supply voltage. Thus, the envelope tracking system 130 can be adapted to power one or more power amplifiers that drive a relatively small load line impedance, such as one or less than 5 Ω load line impedance. Additional details of the power amplifier system 130 may be similar to those previously described with respect to the power amplifier system 50 of FIG.

圖11展示圖5之波封追蹤系統50之電流對時間之一曲線圖150之一實例。該曲線圖50包含電流對時間之一第一曲線151、電流對時間之一第二曲線152及電流對時間之一第三曲線153。該曲線圖150可對應於本文描述之特定波封追蹤系統(諸如圖5之波封追蹤系統50)之電流波形之一實例。例如,該第一曲線151可對應於該誤差放大器51之一輸出電流對時間,該第二曲線152可對應於該降壓轉換器53之一輸出電流對時間,且該第三曲線153可對應於提供給一功率放大器之一電流,該電流可等於該誤差放大器51之輸出電流與該降壓轉換器53之輸出電流之總和。如曲線圖150中所示,相對於由誤差放大器51提供之電流之部分,藉由將誤差電流信號IERROR提供給降壓轉換器53,該降壓轉換器53可經組態以隨時間產生提供給一功率放大器之電流之一較大部分。由於該降壓轉換器53可具有高於該誤差放大器51之一功率效率,故以此方式組態波封追蹤系統可改良功率效率。 11 shows an example of a plot 150 of current versus time for the envelope tracking system 50 of FIG. The graph 50 includes a first curve 151 of current versus time, a second curve 152 of current versus time, and a third curve 153 of current versus time. The graph 150 may correspond to one example of a current waveform of a particular wave seal tracking system (such as the wave seal tracking system 50 of FIG. 5) described herein. For example, the first curve 151 may correspond to one output current versus time of the error amplifier 51, the second curve 152 may correspond to one output current versus time of the buck converter 53, and the third curve 153 may correspond to A current is supplied to a power amplifier, which may be equal to the sum of the output current of the error amplifier 51 and the output current of the buck converter 53. As shown in graph 150, the buck converter 53 can be configured to generate over time by providing an error current signal I ERROR to the buck converter 53 relative to the portion of the current supplied by the error amplifier 51. A larger portion of the current supplied to a power amplifier. Since the buck converter 53 can have a higher power efficiency than the one of the error amplifiers 51, configuring the wave seal tracking system in this manner can improve power efficiency.

圖12係一波封追蹤系統160之另一實施例之一示意方塊圖。該波封追蹤系統160包含電池21、誤差放大器51、回饋電路52、降壓轉換器53、一AC耦合電容器161及一旁路電容器162。 12 is a schematic block diagram of another embodiment of a wave seal tracking system 160. The envelope tracking system 160 includes a battery 21, an error amplifier 51, a feedback circuit 52, a buck converter 53, an AC coupling capacitor 161, and a bypass capacitor 162.

圖12之波封追蹤系統160類似於圖10之波封追蹤系統130,惟圖12之波封追蹤系統160進一步包含AC耦合電容器161及旁路電容器162除外。該旁路電容器162電連接在功率放大器供應電壓VCC_PA與功率低供應電壓V1之間,且可經包含以減小輸出供應雜訊。此外,該波封追蹤系統160包含AC耦合電容器161,該AC耦合電容器161電連接在誤差放大器51之輸出與功率放大器供應電壓VCC_PA之間。 The envelope seal tracking system 160 of FIG. 12 is similar to the envelope seal tracking system 130 of FIG. 10 except that the envelope seal tracking system 160 of FIG. 12 further includes an AC coupling capacitor 161 and a bypass capacitor 162. The bypass capacitor 162 is electrically coupled between the power amplifier supply voltage V CC — PA and the power low supply voltage V 1 and may be included to reduce output supply noise. In addition, the envelope tracking system 160 includes an AC coupling capacitor 161 that is electrically coupled between the output of the error amplifier 51 and the power amplifier supply voltage V CC — PA .

將AC耦合電容器161插入誤差放大器之輸出與功率放大器供應電壓VCC_PA之間之一電路徑中容許使用電池電壓VBATT對誤差放大器51供 電,同時允許誤差放大器51將功率放大器供應電壓VCC_PA控制為高於電池電壓VBATT之電壓位準。因此,該經圖解說明之波封追蹤系統160可用於與功率放大器供應電壓VCC_PA之一相對較高最大電壓位準相關聯之應用中,諸如其中一功率放大器驅動一相對較大負載阻抗且具有一相對較大輸出電壓擺動之一組態。 Inserting the AC coupling capacitor 161 into an electrical path between the output of the error amplifier and the power amplifier supply voltage V CC — PA allows the error amplifier 51 to be powered using the battery voltage V BATT while allowing the error amplifier 51 to control the power amplifier supply voltage V CC — PA to Above the voltage level of the battery voltage V BATT . Thus, the illustrated wave seal tracking system 160 can be used in applications associated with a relatively high maximum voltage level of one of the power amplifier supply voltages V CC — PA , such as one of the power amplifiers driving a relatively large load impedance and having A configuration of one of the relatively large output voltage swings.

在某些實施方案中,該波封追蹤系統160與一功率放大器一起整合在一共同模組上。例如,在一實施例中,一多晶片模組(MCM)包含附接至一共同模組基板之一功率放大器晶粒及一波封追蹤晶粒。然而,其他實施方案亦係可行的,諸如其中對與一功率放大器模組分離之一波封追蹤模組實施波封追蹤系統160之實施方案。 In some embodiments, the envelope tracking system 160 is integrated with a power amplifier on a common module. For example, in one embodiment, a multi-chip module (MCM) includes a power amplifier die attached to a common module substrate and a waveguide tracking die. However, other implementations are also possible, such as embodiments in which a wave seal tracking system 160 is implemented for a wave seal tracking module that is separate from a power amplifier module.

圖13係一波封追蹤模組170之一實施例之一示意方塊圖。該波封追蹤模組170經組態以產生可用以對一或多個功率放大器供電之一功率放大器供應電壓VCC_PAFIG. 13 is a schematic block diagram of one embodiment of a wave seal tracking module 170. The envelope tracking module 170 is configured to generate a power amplifier supply voltage V CC — PA that can be used to power one or more power amplifiers.

該波封追蹤模組170包含一波封追蹤晶粒171,該波封追蹤晶粒171包含第一接針或襯墊172a至第七接針或襯墊172g、降壓控制器74、誤差放大器51、一n型場效電晶體(NFET)174及一p型場效電晶體(PFET)175。該波封追蹤模組170進一步包含一電感器55、回饋電路52、AC耦合電容器161及旁路電容器162。在某些實施方案中,該電感器55、該回饋電路52、該AC耦合電容器161及該旁路電容器162實施為安置在其上附接波封追蹤晶粒171之功率放大器模組170之一模組基板上之組件。例如,可至少部分使用表面安裝組件(SMC)實施該電感器55、該回饋電路52、該AC耦合電容器161及/或該旁路電容器162。然而,其他實施方案亦係可行的。雖然圖13中為清楚起見僅圖解說明特定組件及接針,但是該波封追蹤模組170及/或該波封追蹤晶粒171可經組態以包含額外的組件及/或接針。此外,在某些實施方案中,該電感器55、該回饋電路52、該AC耦合電容器161及/或該旁路 電容器162可全部或部分實施在該波封追蹤晶粒171上。 The envelope tracking module 170 includes a waveguide tracking die 171. The envelope tracking die 171 includes a first pin or pad 172a to a seventh pin or pad 172g, a buck controller 74, and an error amplifier. 51. An n-type field effect transistor (NFET) 174 and a p-type field effect transistor (PFET) 175. The envelope tracking module 170 further includes an inductor 55, a feedback circuit 52, an AC coupling capacitor 161, and a bypass capacitor 162. In some embodiments, the inductor 55, the feedback circuit 52, the AC coupling capacitor 161, and the bypass capacitor 162 are implemented as one of the power amplifier modules 170 on which the wave seal tracking die 171 is attached. Components on the module substrate. For example, the inductor 55, the feedback circuit 52, the AC coupling capacitor 161, and/or the bypass capacitor 162 can be implemented at least in part using a surface mount component (SMC). However, other embodiments are also possible. Although only certain components and pins are illustrated in FIG. 13 for clarity, the envelope tracking module 170 and/or the envelope tracking die 171 can be configured to include additional components and/or pins. Moreover, in certain embodiments, the inductor 55, the feedback circuit 52, the AC coupling capacitor 161, and/or the bypass Capacitor 162 may be implemented in whole or in part on the envelope tracking die 171.

降壓控制器74電連接至可用以對波封追蹤晶粒171供電之第一或VBATT接針172a。降壓控制器74包含電連接至NFET 174之一閘極之一第一控制輸出及電連接至PFET 175之一閘極之一第二控制輸出。該NFET 174進一步包含電連接至功率低供應電壓V1之一源極及電連接至PFET 175之一汲極及第二或BUCKOUT接針172b之一汲極。PFET 175進一步包含電連接至VBATT接針172a之一源極。 The buck controller 74 is electrically coupled to a first or V BATT pin 172a that can be used to power the wave seal tracking die 171. Buck controller 74 includes a first control output electrically coupled to one of the gates of NFET 174 and a second control output electrically coupled to one of the gates of PFET 175. The NFET 174 further comprises a low electrically connected to the power supply voltage V and one of a source electrode electrically connected to the drain of PFET 175 and one of the second pins and one or BUCK OUT drain 172b. PFET 175 further includes a source electrically coupled to one of V BATT pins 172a.

降壓控制器74經組態以自誤差放大器51接收誤差電流IERROR。此外,降壓控制器74電連接至第三或IHI接針172c及第四或ILO接針172d,其等可用以提供臨限電流,降壓控制器74可比較誤差電流IERROR與臨限電流。例如,降壓控制器74可包含磁滯電流比較器77,該磁滯電流比較器77可經組態以控制NFET 174及PFET 175以當誤差電流IERROR大於IHI接針172c上接收之電流時增加功率放大器供應電壓VCC_PA,且當誤差電流IERROR小於ILO接針172d上接收之電流時降低功率放大器供應電壓VCC_PA。比較誤差電流IERROR與臨限電流容許降壓控制器74追蹤功率放大器供應電壓VCC_PA之一低頻分量。雖然圖13中圖解說明降壓控制器74之一組態,但是亦可使用降壓控制器74之其他實施方案,諸如其中以其他方式實施磁滯之組態。 Buck controller 74 is configured to receive error current I ERROR from error amplifier 51. In addition, the buck controller 74 is electrically coupled to the third or I HI pin 172c and the fourth or I LO pin 172d, which can be used to provide a threshold current, and the buck controller 74 can compare the error current I ERROR with Current limit. For example, buck controller 74 can include a hysteresis current comparator 77 that can be configured to control NFET 174 and PFET 175 to have an error current I ERROR greater than the current received on pin 172c of I HI The power amplifier supply voltage V CC — PA is increased, and the power amplifier supply voltage V CC — PA is decreased when the error current I ERROR is less than the current received on the I LO pin 172d. The comparison error current I ERROR and the threshold current allowable buck controller 74 track one of the low frequency components of the power amplifier supply voltage V CC — PA . Although one configuration of the buck controller 74 is illustrated in FIG. 13, other embodiments of the buck controller 74 may be utilized, such as configurations in which hysteresis is otherwise implemented.

誤差放大器51包含電連接至可接收與使用波封追蹤模組170供電之一功率放大器相關聯之一波封信號之第五或ENVELOPE接針172e之一非反相輸入。在某些實施方案中,藉由使用一收發器IC、一基頻帶處理器或一電力管理IC之至少一者提供波封信號。誤差放大器51進一步包含電連接至第六或FBK接針172f之一反相輸入。誤差放大器51進一步包含電連接至第七或ERROUT接針172g之一輸出。誤差放大器51經組態以產生誤差電流IERROR且將誤差電流IERROR提供給降壓控制器74。 The error amplifier 51 includes a non-inverting input electrically coupled to a fifth or ENVELOPE pin 172e that can receive a wave seal signal associated with one of the power amplifiers powered by the wave seal tracking module 170. In some embodiments, the envelope signal is provided by using at least one of a transceiver IC, a baseband processor, or a power management IC. Error amplifier 51 further includes an inverting input electrically coupled to a sixth or FBK pin 172f. The error amplifier 51 further includes an output electrically coupled to one of the seventh or ERR OUT pins 172g. The error amplifier 51 is configured to generate an error current I ERROR and provide an error current I ERROR to the buck controller 74.

電感器55包含電連接至BUCKOUT接針172b之一第一端及電連接至功率放大器供應電壓VCC_PA之一第二端。AC耦合電容器161包含電連接至ERROUT接針172g之一第一端及電連接至功率放大器供應電壓VCC_PA之一第二端。旁路電容器162包含電連接至功率放大器供應電壓VCC_PA之一第一端及電連接至功率低供應電壓V1之一第二端。 The inductor 55 includes a first end electrically coupled to the BUCK OUT pin 172b and a second end electrically coupled to the power amplifier supply voltage V CC — PA . The AC coupling capacitor 161 includes a first end electrically coupled to the ERR OUT pin 172g and a second end electrically coupled to the power amplifier supply voltage V CC — PA. The bypass capacitor 162 includes a first end electrically coupled to one of the power amplifier supply voltages V CC — PA and a second end electrically coupled to the power low supply voltage V 1 .

該經圖解說明之波封追蹤模組170可使用ENVELOPE接針172e上接收之一波封信號控制該功率放大器供應電壓VCC_PA之電壓位準。此外,該波封追蹤模組170採用並行操作以控制該功率放大器供應電壓VCC_PA之電壓位準之一降壓轉換器及一誤差放大器。特定言之,包含磁滯電流比較器77之降壓控制器74可用以追蹤波封信號之一低頻分量,而誤差放大器51可用以藉由基於波封信號與接收自回饋電路52之一高頻回饋信號之間之一差控制傳遞至該功率放大器供應電壓VCC_PA之AC電流而追蹤波封信號之一高頻分量。此外,因為誤差放大器51之輸出透過AC耦合電容器161電連接至功率放大器供應電壓VCC_PA,所以該波封追蹤模組170可用以控制該功率放大器供應電壓VCC_PA之電壓位準使其大於該VBATT接針172a上接收之一電池電壓。 The illustrated wave seal tracking module 170 can control the voltage level of the power amplifier supply voltage V CC — PA by receiving a wave seal signal on the ENVELOPE pin 172e. In addition, the envelope tracking module 170 employs a step-down converter and an error amplifier that operate in parallel to control the voltage level of the power amplifier supply voltage V CC — PA . In particular, the buck controller 74 including the hysteresis current comparator 77 can be used to track one of the low frequency components of the envelope signal, and the error amplifier 51 can be used to pass the high frequency based on the envelope signal and the receive feedback circuit 52. A difference between the feedback signals controls the AC current delivered to the power amplifier supply voltage V CC — PA to track one of the high frequency components of the envelope signal. In addition, since the output of the error amplifier 51 is electrically connected to the power amplifier supply voltage V CC — PA through the AC coupling capacitor 161 , the envelope tracking module 170 can be used to control the voltage level of the power amplifier supply voltage V CC — PA to be greater than the V. A battery voltage is received on the BATT pin 172a.

如上文各種組態中描述,一降壓轉換器可經組態以產生具有基於由一誤差放大器產生之一誤差電流之一量值之一降壓電壓。然而,可以其他方式控制降壓轉換器。例如,在某些實施方案中,一功率放大器電壓可經過濾且用以產生用於控制降壓轉換器之一控制電壓。例如,在某些例項中,可比較經過濾之功率放大器供應電壓與一參考電壓以產生控制電壓。 As described in various configurations above, a buck converter can be configured to generate a buck voltage having one of the magnitudes of the error current generated by an error amplifier. However, the buck converter can be controlled in other ways. For example, in some embodiments, a power amplifier voltage can be filtered and used to generate a control voltage for controlling one of the buck converters. For example, in some embodiments, the filtered power amplifier supply voltage and a reference voltage can be compared to generate a control voltage.

圖14係一波封追蹤模組180之另一實施例之一示意方塊圖。該波封追蹤模組180經組態以產生可用以對一或多個功率放大器供電之一功率放大器供應電壓VCC_PA14 is a schematic block diagram of another embodiment of a wave seal tracking module 180. The envelope tracking module 180 is configured to generate a power amplifier supply voltage V CC — PA that can be used to power one or more power amplifiers.

該波封追蹤模組180包含一波封追蹤晶粒181,該波封追蹤晶粒 181包含第一接針或襯墊182a至第七接針或襯墊182g、一誤差放大器183、一NFET 184、一PFET 185、一直流轉直流控制器186、一參考電壓產生器187、一低通濾波器188及一比較器228。該波封追蹤模組180進一步包含一電感器55、AC耦合電容器161、旁路電容器162、一第一回饋電阻器189a及一第二回饋電阻器189b。 The envelope tracking module 180 includes a wave seal tracking die 181 that tracks the die The 181 includes a first pin or pad 182a to a seventh pin or pad 182g, an error amplifier 183, an NFET 184, a PFET 185, a DC DC controller 186, a reference voltage generator 187, and a low pass. Filter 188 and a comparator 228. The envelope tracking module 180 further includes an inductor 55, an AC coupling capacitor 161, a bypass capacitor 162, a first feedback resistor 189a, and a second feedback resistor 189b.

在某些實施方案中,電感器55、AC耦合電容器161、旁路電容器162、第一回饋電阻器189a及第二回饋電阻器189b實施為安置在與該波封追蹤晶粒181相關聯之一封包基板上之組件。然而,其他實施方案亦係可行的。雖然為清楚起見在圖14中僅圖解說明特定組件及接針,但是該波封追蹤模組180及/或該波封追蹤晶粒181可經組態以包含額外的組件及/或接針。 In some embodiments, the inductor 55, the AC coupling capacitor 161, the bypass capacitor 162, the first feedback resistor 189a, and the second feedback resistor 189b are implemented to be disposed in association with the envelope tracking die 181. The components on the package substrate. However, other embodiments are also possible. Although only certain components and pins are illustrated in FIG. 14 for clarity, the envelope tracking module 180 and/or the envelope tracking die 181 can be configured to include additional components and/or pins. .

該直流轉直流控制器186電連接至第一或VBATT接針182a。該直流轉直流控制器186包含電連接至NFET 184之一閘極之一第一控制輸出及電連接至PFET 185之一閘極之一第二控制輸出。該NFET 184進一步包含電連接至功率低供應電壓V1之一源極及電連接至PFET 185之一汲極及第二或VREG接針182b之一汲極。該PFET 185進一步包含電連接至該VBATT接針182a之一源極。該直流轉直流控制器186經組態以自該比較器228接收一控制電壓VCONTROL。該直流轉直流控制器186可經組態以基於可操作為一低頻回饋信號之控制電壓VCONTROL之一電壓位準控制該NFET 184及該PFET 185之閘極電壓以控制該功率放大器供應電壓VCC_PA之電壓位準。雖然該直流轉直流控制器186係以一降壓轉換器組態加以圖解說明,但是本文中的教示亦可適用於升壓轉換器組態。 The DC to DC controller 186 is electrically coupled to the first or V BATT pin 182a. The DC to DC controller 186 includes a first control output electrically coupled to one of the gates of the NFET 184 and a second control output electrically coupled to one of the gates of the PFET 185. The NFET 184 further includes a source electrically coupled to one of the low power supply voltages V 1 and electrically coupled to one of the drains of the PFET 185 and one of the second or V REG contacts 182b. The PFET 185 further includes a source electrically coupled to one of the V BATT pins 182a. The DC to DC controller 186 is configured to receive a control voltage V CONTROL from the comparator 228. The DC to DC controller 186 can be configured to control the gate voltage of the NFET 184 and the PFET 185 based on a voltage level of a control voltage V CONTROL operable as a low frequency feedback signal to control the power amplifier supply voltage V. The voltage level of CC_PA . Although the DC-to-DC controller 186 is illustrated in a buck converter configuration, the teachings herein can also be applied to a boost converter configuration.

該誤差放大器183包含電連接至第三或ENVELOPE接針182c之一非反相輸入,該第三或ENVELOPE接針182c可經組態以接收與使用該波封追蹤模組180供電之一功率放大器之輸入信號相關聯之一波封信 號。在某些實施方案中,使用一收發器IC、一基頻帶處理器或一電力管理IC之至少一者提供該波封信號。如下文將詳細描述,該誤差放大器183進一步包含電連接至第四或FBKHIGH接針182d之一反相輸入,該第四或FBKHIGH接針182d已經組態以自第一回饋電阻器189a及第二回饋電阻器189b接收一高頻回饋信號。該誤差放大器183進一步包含電連接至第五或ERROUT接針182e之一輸出。雖然圖14圖解說明其中使用電阻器以產生用於一誤差放大器之一高頻回饋信號之一組態,但是其他組態亦係可行的,包含(例如)省略電阻器及/或包含以其他方式配置之電阻器之組態。 The error amplifier 183 includes a non-inverting input electrically coupled to a third or ENVELOPE pin 182c, the third or ENVELOPE pin 182c being configurable to receive and power a power amplifier using the wave seal tracking module 180 The input signal is associated with one of the enveloped signals. In some embodiments, the envelope signal is provided using at least one of a transceiver IC, a baseband processor, or a power management IC. As will be described in detail, which further comprises an error amplifier 183 is electrically connected to the fourth or inverting input of one of these pins 182d FBK HIGH, the fourth or FBK HIGH configured to have pins and 182d from the first feedback resistor 189a and The second feedback resistor 189b receives a high frequency feedback signal. The error amplifier 183 further includes an output electrically coupled to one of the fifth or ERR OUT pins 182e. Although FIG. 14 illustrates the configuration in which a resistor is used to generate one of the high frequency feedback signals for an error amplifier, other configurations are also possible, including, for example, omitting resistors and/or including other means. Configuration of the configured resistors.

低通濾波器188包含電連接至第六或FBKLOW接針182e之一輸入,該第六或FBKLOW接針182f已經組態以接收功率放大器供應電壓VCC_PA。該低通濾波器188可經組態以過濾或衰減該功率放大器供應電壓VCC_PA之高頻分量以產生一經過濾之功率放大器供應電壓。參考電壓產生器187可產生一參考電壓VREF,比較器228可比較該參考電壓VREF與該經過濾之功率放大器供應電壓以產生用以控制該直流轉直流控制器186之控制電壓VCONTROLLow pass filter 188 comprises an electrical input connected to one of the sixth or 182e FBK LOW Pins, the sixth or FBK LOW Pins 182f has been configured to receive the power amplifier supply voltage V CC_PA. The low pass filter 188 can be configured to filter or attenuate high frequency components of the power amplifier supply voltage V CC — PA to produce a filtered power amplifier supply voltage. The reference voltage generator 187 can generate a reference voltage V REF , and the comparator 228 can compare the reference voltage V REF with the filtered power amplifier supply voltage to generate a control voltage V CONTROL for controlling the DC to DC controller 186.

在經圖解說明之組態中,該參考電壓產生器187電連接至可與一串列周邊介面(SPI)之一資料輸入接針相關聯之第七或SPI接針182g。雖然為清楚起見在圖14中未進行圖解說明,但是該波封追蹤模組180可包含與該串列周邊介面相關聯之額外接針,包含(例如)一串列時脈接針、一資料輸出接針及/或一選擇接針。該SPI接針182g可與用以提供用於控制該參考電壓VREF之一電壓位準之資料之一串列周邊介面或匯流排相關聯。例如,該參考電壓產生器187可包含可將該SPI接針182g上接收之數位資料轉換為用以產生該參考電壓VREF之一類比信號之一數位轉類比(D-to-A)轉換器。在某些實施方案中,該SPI接針182g可用以動態地改變該參考電壓VREF以最佳化該波封追蹤模組180供電 之一功率放大器之能量效率。例如,該參考電壓產生器187可用以在功率放大器之傳輸時槽之間動態地改變該參考電壓VREF以(例如)改變該功率放大器供應電壓VCC_PA跨不同功率模式之特性。 In the illustrated configuration, the reference voltage generator 187 is electrically coupled to a seventh or SPI pin 182g that can be associated with a data input pin of a serial peripheral interface (SPI). Although not illustrated in FIG. 14 for clarity, the envelope tracking module 180 can include additional pins associated with the series of peripheral interfaces, including, for example, a series of clock contacts, Data output pin and / or a select pin. The SPI pin 182g can be associated with a serial peripheral interface or busbar for providing one of the data for controlling the voltage level of the reference voltage V REF . For example, the reference voltage generator 187 can include a digital to analog analog (D-to-A) converter that can convert the digital data received on the SPI pin 182g into an analog signal for generating the reference voltage V REF . . In some embodiments, the SPI pin 182g can be used to dynamically change the reference voltage V REF to optimize the energy efficiency of one of the power amplifiers powered by the envelope tracking module 180. For example, the reference voltage generator 187 can be used to dynamically change the reference voltage V REF between transmission slots of the power amplifier to, for example, vary the characteristics of the power amplifier supply voltage V CC — PA across different power modes.

電感器55包含電連接至VREG接針182b之一第一端及電連接至功率放大器供應電壓VCC_PA之一第二端。AC耦合電容器161包含電連接至ERROUT接針182e之一第一端及電連接至功率放大器供應電壓VCC_PA之一第二端。旁路電容器162包含電連接至功率放大器供應電壓VCC_PA之一第一端及電連接至功率低供應電壓V1之一第二端。第一回饋電阻器189a包含電連接至FBKHIGH接針182d之一第一端及電連接至ERROUT接針182e之一第二端。第二回饋電阻器189b包含電連接至功率低供應電壓V1之一第一端及電連接至FBKHIGH接針182d之一第二端。 The inductor 55 includes a first end electrically coupled to the V REG pin 182b and a second end electrically coupled to the power amplifier supply voltage V CC — PA . The AC coupling capacitor 161 includes a first end electrically coupled to one of the ERR OUT pins 182e and a second end electrically coupled to the power amplifier supply voltage V CC — PA. The bypass capacitor 162 includes a first end electrically coupled to one of the power amplifier supply voltages V CC — PA and a second end electrically coupled to the power low supply voltage V 1 . The first feedback resistor 189a includes a first end electrically coupled to the FBK HIGH pin 182d and a second end electrically coupled to the ERR OUT pin 182e. Comprising a second feedback resistor 189b is electrically connected to the one end 182d of the second end of a first one of a low power supply voltage V FBK HIGH and electrically connected to the contact pins.

在經圖解說明之組態中,該誤差放大器183自該第一回饋電阻器189a及該第二回饋電阻器189b接收一高頻回饋信號。例如,在經圖解說明之組態中,該AC耦合電容器161已安置在該功率放大器供應電壓VCC_PA與該第一回饋電阻器189a及該第二回饋電阻器189b之間,藉此操作以阻止該功率放大器供應電壓VCC_PA之低頻分量到達該誤差放大器183之反相輸入。以此方式組態該功率放大器模組180可輔助藉由容許該直流轉直流控制器186追蹤波封信號之低頻變化且容許該誤差放大器183追蹤波封信號之高頻變化來增加該模組之功率效率。 In the illustrated configuration, the error amplifier 183 receives a high frequency feedback signal from the first feedback resistor 189a and the second feedback resistor 189b. For example, in the illustrated configuration, the AC coupling capacitor 161 has been placed between the power amplifier supply voltage V CC — PA and the first feedback resistor 189a and the second feedback resistor 189b, thereby operating to block The low frequency component of the power amplifier supply voltage V CC — PA reaches the inverting input of the error amplifier 183. Configuring the power amplifier module 180 in this manner can assist in increasing the module by allowing the DC-to-DC controller 186 to track low frequency variations of the envelope signal and allowing the error amplifier 183 to track high frequency variations of the envelope signal. Power efficiency.

在經圖解說明之組態中,僅使用高頻回饋操作該誤差放大器183且因此由該誤差放大器183產生之一誤差電流不一定包含適用於藉由該直流轉直流控制器186追蹤之低頻資訊。因此,該經圖解說明之波封追蹤模組180使用該低通濾波器188過濾該功率放大器供應電壓VCC_PA且比較經過濾之功率放大器供應電壓與該參考電壓VREF以產生操作為一低頻回饋信號之控制電壓VCONTROL,而非使用來自該誤差放 大器183之一誤差電流IERROR控制該直流轉直流控制器186。 In the illustrated configuration, the error amplifier 183 is only operated using high frequency feedback and thus one of the error currents generated by the error amplifier 183 does not necessarily include low frequency information suitable for tracking by the DC to DC controller 186. Therefore, the illustrated wave seal tracking module 180 filters the power amplifier supply voltage V CC — PA using the low pass filter 188 and compares the filtered power amplifier supply voltage with the reference voltage V REF to generate an operation as a low frequency feedback. The control voltage V CONTROL of the signal is instead controlled by the error current I ERROR from the error amplifier 183 to control the DC to DC controller 186.

圖15係一電話板190之一實施例之一示意方塊圖。該電話板190包含一收發器IC 191、一電力管理IC(PMIC)192及一功率放大器(PA)模組193。該收發器IC 191經組態以產生一射頻信號(RF SIGNAL)及一波封信號(ENVELOPE)。該PA模組193經組態以自該收發器IC 191接收該波封信號及該射頻信號。此外,該PA模組193經組態以自該PMIC 192接收一經調節電壓VREG且將一控制電壓VCONTROL提供給該PMIC 192。該PMIC 192可經組態以基於該控制電壓VCONTROL之一電壓位準控制該經調節電壓VREG之一電壓位準。 15 is a schematic block diagram of one embodiment of a telephone board 190. The phone board 190 includes a transceiver IC 191, a power management IC (PMIC) 192, and a power amplifier (PA) module 193. The transceiver IC 191 is configured to generate a radio frequency signal (RF SIGNAL) and a envelope signal (ENVELOPE). The PA module 193 is configured to receive the envelope signal and the radio frequency signal from the transceiver IC 191. Additionally, the PA module 193 is configured to receive a regulated voltage V REG from the PMIC 192 and provide a control voltage V CONTROL to the PMIC 192. The PMIC 192 can be configured to control one of the regulated voltages V REG based on a voltage level of the control voltage V CONTROL .

該PA模組193可為(例如)包含安裝在一模組或載體基板之一表面上之一或多個晶粒之一多晶片模組(MCM)。藉由將複數個晶粒及/或其他組件整合在一模組上,可達成多種優點,包含(例如)減小成本、改良製造便捷性及/或減小互連件之長度。 The PA module 193 can be, for example, a multi-chip module (MCM) comprising one or more dies mounted on one surface of a module or carrier substrate. By integrating a plurality of dies and/or other components into a module, various advantages can be achieved including, for example, reducing cost, improving manufacturing convenience, and/or reducing the length of the interconnect.

PMIC 192可包含一或多個晶粒及/或經組態以產生用於該PA模組193之一經調節電壓之其他組件。該PMIC 192可包含(例如)一或多個直流轉直流轉換器、低壓降(LDO)調節器及/或經組態以產生用於該電話板190之組件(包含例如該PA模組193)之一或多個經調節供應電壓之其他電路。該PMIC 192可經組態以使用來自一電池之一電池電壓產生該一或多個功率供應電壓。在某些實施方案中,該PMIC 192可包含用於對該電池提供功率路徑管理之一電池充電器。 The PMIC 192 can include one or more dies and/or other components configured to generate a regulated voltage for one of the PA modules 193. The PMIC 192 can include, for example, one or more DC to DC converters, low dropout (LDO) regulators, and/or configured to generate components for the phone board 190 (including, for example, the PA module 193) One or more other circuits that are regulated to supply voltage. The PMIC 192 can be configured to generate the one or more power supply voltages using a battery voltage from one of the batteries. In some embodiments, the PMIC 192 can include a battery charger for providing power path management for the battery.

該PA模組193可產生控制電壓VCONTROL,電壓VCONTROL可由該PMIC 192使用以控制提供給該PA模組193之經調節電壓VREG之一電壓位準。如下文將詳細描述,該PA模組193可包含一誤差放大器,該誤差放大器經組態以基於接收自收發器IC 191之波封信號ENVELOPE調整該經調節電壓VREG之一電壓位準。此外,該PA模組193可包含經組態以調整控制電壓VCONTROL之一電壓位準之回饋電路。該PA模組193 可使用該控制電壓VCONTROL以依類似於先前關於圖14描述之一方式控制該經調節電壓VREG之一電壓位準。因此,該PA模組193及該PMIC 192可共同地操作以對安置在該PA模組193上之功率放大器提供波封追蹤。 The PA module 193 may generate a control voltage V CONTROL, the voltage V CONTROL The PMIC 192 may be used to control the PA module 193 is provided to the one of the regulated voltage V REG voltage level. As will be described in greater detail below, the PA module 193 can include an error amplifier configured to adjust a voltage level of the regulated voltage V REG based on a envelope signal ENVELOPE received from the transceiver IC 191. Additionally, the PA module 193 can include a feedback circuit configured to adjust one of the voltage levels of the control voltage V CONTROL . The PA module 193 can use the control voltage V CONTROL to control one of the regulated voltages V REG voltage levels in a manner similar to that previously described with respect to FIG. Accordingly, the PA module 193 and the PMIC 192 can collectively operate to provide envelope tracking for a power amplifier disposed on the PA module 193.

圖9之電話板190包含用於在不需要一專用波封追蹤模組或晶粒之情況下提供波封信號追蹤之一波封追蹤系統。因此,該電話板190可使用波封追蹤功能操作,同時相對於其中一電話板包含一專用波封追蹤模組或晶粒之一方案相比具有減小之主板成本及/或面積。雖然圖15圖解說明其中使用收發器IC 191產生波封信號之一組態,但是其他組態亦係可行的。 The phone board 190 of Figure 9 includes a wave seal tracking system for providing wave seal signal tracking without the need for a dedicated wave seal tracking module or die. Thus, the phone board 190 can operate using the wave seal tracking function while having a reduced motherboard cost and/or area compared to one of the phone boards including a dedicated wave seal tracking module or die. Although FIG. 15 illustrates a configuration in which the transceiver IC 191 is used to generate a wave seal signal, other configurations are also possible.

圖16A係一RF系統200之一實施例之一示意方塊圖。該RF系統200包含一功率放大器(PA)模組211及一電力管理積體電路(PMIC)201。在一實施例中,該RF系統200係一無線器件之一電話板之一部分。 16A is a schematic block diagram of one embodiment of an RF system 200. The RF system 200 includes a power amplifier (PA) module 211 and a power management integrated circuit (PMIC) 201. In one embodiment, the RF system 200 is part of a telephone board of one of the wireless devices.

該PMIC 201包含NFET 184、PFET 185、直流轉直流控制器186、第一接針202a至第三接針202c、一PMIC電感器205及一PMIC電容器207。雖然為清楚起見將PMIC 201圖解說明為包含特定組件及接針,但是該PMIC 201可經調適以包含額外組件及/或接針。 The PMIC 201 includes an NFET 184, a PFET 185, a DC to DC controller 186, first to third pins 202a to 202c, a PMIC inductor 205, and a PMIC capacitor 207. Although PMIC 201 is illustrated as including particular components and pins for clarity, the PMIC 201 can be adapted to include additional components and/or pins.

該直流轉直流控制器186包含電連接至可經組態以自一電池接收一電池電壓VBATT之第一或VBATT接針202a之一供應輸入。該直流轉直流控制器186進一步包含電連接至第二或VCONTROL接針202b之一控制輸入。該直流轉直流控制器186包含電連接至NFET 184之一閘極之一第一控制輸出及電連接至該、PFET 185之一閘極之一第二控制輸出。該、PFET 185進一步包含電連接至VBATT接針202a之一源極及電連接至NFET 184之一汲極及PMIC電感器205之一第一端之一汲極。該NFET 184進一步包含電連接至功率低供應電壓V1之一源極,且該 PMIC電感器205進一步包含電連接至可用以對功率放大器模組211提供一經調節電壓之第三或VREG接針202c之一第二端。PMIC電容器207係電連接在VREG接針202c與功率低供應電壓V1之間。該直流轉直流控制器186可經組態以控制該NFET 184及該PFET 185之閘極電壓以基於在VCONTROL接針202b上接收之一控制電壓之一電壓位準控制VREG接針202c之電壓位準。雖然PMIC 201係針對一降壓轉換器組態而圖解說明,但是該PMIC 201可經調適以提供一升壓電壓。因此,該經調節電壓VREG可為一降壓電壓、一升壓電壓或隨時間在一降壓電壓與一升壓電壓之間改變之一電壓。 The DC-to-DC controller 186 includes a supply input electrically coupled to one of the first or V BATT pins 202a that can be configured to receive a battery voltage V BATT from a battery. The DC to DC controller 186 further includes a control input electrically coupled to the second or V CONTROL pin 202b. The DC to DC controller 186 includes a first control output electrically coupled to one of the gates of the NFET 184 and a second control output electrically coupled to one of the gates of the PFET 185. The PFET 185 further includes a source electrically coupled to one of the V BATT pins 202a and electrically coupled to one of the NFET 184 and one of the first ends of the PMIC inductor 205. The NFET 184 further comprises one of a power source connected to the power supply voltage V extremely low, and the PMIC 205 further includes an inductor electrically coupled to the power amplifier module may be used to provide 211 or a third regulated voltage V REG Pins One of the second ends of 202c. The PMIC capacitor 207 is electrically connected between the V REG pin 202c and the power low supply voltage V 1 . The DC to DC controller 186 can be configured to control the gate voltage of the NFET 184 and the PFET 185 to control the V REG pin 202c based on a voltage level of one of the control voltages received on the V CONTROL pin 202b. Voltage level. Although the PMIC 201 is illustrated for a buck converter configuration, the PMIC 201 can be adapted to provide a boost voltage. Therefore, the regulated voltage V REG can be a step-down voltage, a boost voltage, or a voltage that changes between a step-down voltage and a boost voltage over time.

功率放大器模組211包含功率放大器32、AC耦合電容器161、旁路電容器162、誤差放大器183、參考電壓產生器187、低通濾波器188、第一回饋電阻器189a、第二回饋電阻器189b、第一接針212a至第七接針212g、一電感器215及比較器228。雖然為清楚起見將該功率放大器模組211圖解說明為包含特定組件及接針,但是該功率放大器模組211可經調適以包含額外組件及/或接針。 The power amplifier module 211 includes a power amplifier 32, an AC coupling capacitor 161, a bypass capacitor 162, an error amplifier 183, a reference voltage generator 187, a low pass filter 188, a first feedback resistor 189a, a second feedback resistor 189b, The first to seventh pins 212a to 212g, an inductor 215, and a comparator 228. Although the power amplifier module 211 is illustrated as including particular components and pins for clarity, the power amplifier module 211 can be adapted to include additional components and/or pins.

該第二回饋電阻器189b包含電連接至功率低供應電壓V1之一第一端及電連接至誤差放大器183之一反相輸入及第一回饋電阻器189a之一第一端之一第二端。該第一回饋電阻器189a進一步包含電連接至該AC耦合電容器161之一第一端及該誤差放大器183之一輸出之一第二端。該誤差放大器183進一步包含電連接至可經組態以接收電池電壓VBATT之第一或VBATT接針212a之一供應輸入。該誤差放大器183進一步包含電連接至第二或ENVELOPE接針212b之一非反相輸入。該AC耦合電容器161進一步包含電連接至功率放大器供應電壓VCC_PA之一第二端。 The second feedback resistor 189b includes a first end electrically connected to one of the low power supply voltages V1 and one of the first ends of the first input of the first feedback terminal 189a electrically connected to the inverting input of the error amplifier 183 end. The first feedback resistor 189a further includes a first end electrically coupled to one of the AC coupling capacitors 161 and a second end of one of the outputs of the error amplifier 183. The error amplifier 183 further includes a supply input electrically coupled to one of the first or V BATT contacts 212a that can be configured to receive the battery voltage V BATT . The error amplifier 183 further includes a non-inverting input electrically coupled to the second or ENVELOPE pin 212b. The AC coupling capacitor 161 further includes a second end electrically coupled to one of the power amplifier supply voltages V CC — PA .

該電感器215包含電連接至第三或VREG接針212c之一第一端及電連接至功率放大器供應電壓VCC_PA之一第二端。該電容器162包含電 連接至功率放大器供應電壓VCC_PA之一第一端及電連接至功率低供應電壓V1之一第二端。該低通濾波器188包含電連接至功率放大器供應電壓VCC_PA之一輸入及電連接至比較器228之一第一輸入之一輸出。該比較器228進一步包含電連接至第四或VCONTROL接針212d之一輸出及經組態以自參考電壓產生器187之一輸出接收一參考電壓VREF之一第二輸入。該參考電壓產生器187進一步包含電連接至可與一串列周邊介面之一資料輸入接針相關聯之第五或SPI接針212e之一輸入。功率放大器32包含經組態以接收該功率放大器供應電壓VCC_PA之一供應輸入、電連接至第六或RF_IN接針212f之一信號輸入及電連接至第七或RF_OUT接針212g之一信號輸出。 The inductor 215 includes a first end electrically coupled to the third or V REG pin 212c and a second end electrically coupled to the power amplifier supply voltage V CC — PA . The capacitor 162 includes a first end electrically coupled to one of the power amplifier supply voltages V CC — PA and a second end electrically coupled to the power low supply voltage V 1 . The low pass filter 188 includes an input electrically coupled to one of the power amplifier supply voltages V CC — PA and electrically coupled to one of the first inputs of the comparator 228 . The comparator 228 further includes a second input electrically coupled to one of the fourth or V CONTROL pins 212d and configured to receive a reference voltage V REF from one of the reference voltage generators 187. The reference voltage generator 187 further includes an input electrically coupled to one of a fifth or SPI pin 212e that is associated with a data input pin of a series of peripheral interfaces. Power amplifier 32 includes a supply input configured to receive one of the power amplifier supply voltages V CC — PA , a signal input electrically coupled to a sixth or RF_IN pin 212f , and a signal output electrically coupled to a seventh or RF_OUT pin 212g .

該低通濾波器188可經組態以過濾或衰減該功率放大器供應電壓VCC_PA之高頻分量以產生用於該比較器228之一經過濾功率放大器供應電壓。該比較器228亦可自該參考電壓產生器187接收該參考電壓VREF,且可比較該參考電壓VREF與該經過濾之功率放大器供應電壓以產生用以控制PMIC 201之直流轉直流控制器186之控制電壓VCONTROL。在經圖解說明之組態中,該參考電壓產生器187係電連接至SPI接針212e,該SPI接針212e可耦合至提供用於控制該參考電壓VREF之一電壓位準之資料之一串列周邊介面或匯流排。例如,該參考電壓產生器187可包含一數位轉類比(D轉A)轉換器,其可將該SPI接針212e上接收之數位資料轉換為用以產生該參考電壓VREF之一類比信號。 The low pass filter 188 can be configured to filter or attenuate high frequency components of the power amplifier supply voltage V CC — PA to generate a filtered power amplifier supply voltage for the comparator 228 . The comparator 228 can also receive the reference voltage V REF from the reference voltage generator 187 and compare the reference voltage V REF with the filtered power amplifier supply voltage to generate a DC-to-DC controller for controlling the PMIC 201. 186 control voltage V CONTROL . In the illustrated configuration, the reference voltage generator 187 is electrically coupled to the SPI pin 212e, which can be coupled to one of the data provided to control one of the voltage levels of the reference voltage V REF Serialize the peripheral interface or busbar. For example, the reference voltage generator 187 can include a digital to analog (D to A) converter that converts the digital data received on the SPI pin 212e into an analog signal for generating the reference voltage V REF .

在經圖解說明之組態中,該AC耦合電容器161已安置在該功率放大器供應電壓VCC_PA與該第一回饋電阻器189a及該第二回饋電阻器189b之串聯組合之間,藉此操作以阻止與該功率放大器供應電壓VCC_PA相關聯之低頻成分到達該誤差放大器183之反相輸入。因此,僅使用高頻回饋操作圖16A中所示之誤差放大器183。此外,該比較 器228產生控制電壓VCONTROL,該控制電壓VCONTROL操作為基於由該低通濾波器188產生之經過濾功率放大器供應電壓與由該參考電壓產生器187產生之參考電壓VREF之一比較之一低頻回饋信號。 In the illustrated configuration, the AC coupling capacitor 161 has been placed between the power amplifier supply voltage V CC — PA and the series combination of the first feedback resistor 189a and the second feedback resistor 189b, thereby operating The low frequency component associated with the power amplifier supply voltage V CC — PA is prevented from reaching the inverting input of the error amplifier 183 . Therefore, the error amplifier 183 shown in Fig. 16A is operated only using the high frequency feedback. In addition, the comparator 228 generates a control voltage V CONTROL which controls the operation based on the voltage V CONTROL filtered amplifier supply voltage is generated by the sum of the low pass filter 188 and the reference voltage generated by the reference voltage of the generator of 187 V REF A comparison of one of the low frequency feedback signals.

RF系統200圖解說明其中在功率放大器模組211上已包含誤差放大器183之一方案。在功率放大器模組211上包含誤差放大器183及功率放大器32二者可減小用以對功率放大器32提供一供應電壓之一電感器(諸如圖3B之電感器27)之大小。例如,誤差放大器183及功率放大器32皆電連接至電感器215之第二端,且因此由該誤差放大器183產生之一高頻誤差電流無須通過該電感器215且促成電感器的L*dI/dt雜訊。因此,針對給定量的功率供應雜訊,將該誤差放大器183與該功率放大器32整合在一共同模組上可減小用以對該功率放大器32提供一供應電壓之電感器之大小。 The RF system 200 illustrates one of the schemes in which the error amplifier 183 is already included on the power amplifier module 211. The inclusion of both error amplifier 183 and power amplifier 32 on power amplifier module 211 can reduce the size of an inductor (such as inductor 27 of FIG. 3B) used to provide a supply voltage to power amplifier 32. For example, both the error amplifier 183 and the power amplifier 32 are electrically coupled to the second end of the inductor 215, and thus one of the high frequency error currents generated by the error amplifier 183 does not have to pass through the inductor 215 and contributes to the L*dI/ of the inductor. Dt noise. Thus, for a given amount of power supply noise, integrating the error amplifier 183 with the power amplifier 32 on a common module reduces the size of the inductor used to provide a supply voltage to the power amplifier 32.

圖16B係一RF系統220之另一實施例之一示意方塊圖。該RF系統220包含一功率放大器模組221及PMIC 201。圖16B之RF系統220類似於圖16A之RF系統200,惟圖16B之RF系統220包含一不同功率放大器模組組態除外。特定言之,與圖16A之功率放大器模組211相比,圖16B之功率放大器模組221進一步包含一高通濾波器216及一比較器229。該高通濾波器216包含經組態以接收功率放大器供應電壓VCC_PA之一輸入及經組態以對該比較器229提供一經過濾之功率放大器供應電壓之一輸出。該高通濾波器216可過濾或移除該功率放大器供應電壓VCC_PA之低頻分量以產生一經高通過濾之功率放大器供應電壓。該比較器229進一步經組態以自ENVELOPE接針212b接收一波封信號,且比較該經高通過濾之功率放大器供應電壓與該波封信號以產生用於誤差放大器183之非反相輸入之一高頻波封信號。 16B is a schematic block diagram of another embodiment of an RF system 220. The RF system 220 includes a power amplifier module 221 and a PMIC 201. The RF system 220 of Figure 16B is similar to the RF system 200 of Figure 16A except that the RF system 220 of Figure 16B includes a different power amplifier module configuration. In particular, the power amplifier module 221 of FIG. 16B further includes a high pass filter 216 and a comparator 229 as compared to the power amplifier module 211 of FIG. 16A. The high pass filter 216 includes an output configured to receive one of the power amplifier supply voltages V CC — PA and configured to provide the comparator 229 with a filtered power amplifier supply voltage. The high pass filter 216 can filter or remove the low frequency component of the power amplifier supply voltage V CC — PA to generate a high pass filtered power amplifier supply voltage. The comparator 229 is further configured to receive a envelope signal from the ENVELOPE pin 212b and compare the high pass filtered power amplifier supply voltage to the envelope signal to generate one of the non-inverting inputs for the error amplifier 183 High frequency envelope signal.

雖然圖16A至圖16B圖解說明包含AC耦合電容器161之RF系統之組態,但是在某些實施方案中,可省略該AC耦合電容器161以減小組 件計數。例如,雖然省略該AC耦合電容器161可減小該誤差放大器183可將該功率放大器供應電壓VCC_PA控制至之最大電壓位準,但是可使用此等RF系統以(例如)以對驅動一相對較小負載線阻抗且因此具有一相對較小輸出電壓擺動之一或多個放大器供電。 Although FIGS. 16A-16B illustrate the configuration of an RF system including an AC coupling capacitor 161, in some embodiments, the AC coupling capacitor 161 can be omitted to reduce component count. For example, although omitting the AC coupling capacitor 161 may reduce the error amplifier 183 to control the power amplifier supply voltage V CC — PA to the maximum voltage level, such RF systems may be used to, for example, drive a relatively high The small load line impedance and therefore has a relatively small output voltage swing that is powered by one or more amplifiers.

圖17A係根據一實施例之一多頻帶功率放大器系統230之一示意方塊圖。該經圖解說明之多頻帶功率放大器系統230包含一第一功率放大器模組231、一第二功率放大器模組232、一第三功率放大器模組233及一電力管理IC 234。該第一功率放大器模組231包含一第一電感器241,該第二功率放大器模組232包含一第二電感器242且該第三功率放大器模組233包含一第三電感器243。雖然該多頻帶功率放大器系統230被圖解說明為包含三個功率放大器模組,但是該多頻帶功率放大器系統230可經調適以包含更多或更少功率放大器模組。 17A is a schematic block diagram of one of the multi-band power amplifier systems 230 in accordance with an embodiment. The illustrated multi-band power amplifier system 230 includes a first power amplifier module 231, a second power amplifier module 232, a third power amplifier module 233, and a power management IC 234. The first power amplifier module 231 includes a first inductor 241 , the second power amplifier module 232 includes a second inductor 242 , and the third power amplifier module 233 includes a third inductor 243 . While the multi-band power amplifier system 230 is illustrated as including three power amplifier modules, the multi-band power amplifier system 230 can be adapted to include more or fewer power amplifier modules.

該第一功率放大器模組231至該第三功率放大器模組233可各自經組態以經由一不同的RF通信頻帶通信。在一多頻帶功率放大器系統中提供複數個功率放大器可輔助增加該系統之功率效率及/或放鬆對功率放大器的設計限制,這係因為各功率放大器可針對功率放大器所放大之特定頻帶而單獨最佳化。 The first power amplifier module 231 to the third power amplifier module 233 can each be configured to communicate via a different RF communication band. Providing a plurality of power amplifiers in a multi-band power amplifier system can help increase the power efficiency of the system and/or relax design constraints on the power amplifier because each power amplifier can be individually and exclusively for a particular frequency band amplified by the power amplifier. Jiahua.

PMIC 234已經組態以產生一經調節電壓VREG,該經調節電壓VREG已提供至該第一電感器241至該第三電感器243之各者之一第一端。該第一電感器241至該第三電感器243各自包含電連接至各功率放大器模組本端之一功率放大器供應電壓之一第二端。例如,該第一電感器241包含電連接至與該第一功率放大器模組231相關聯之一第一功率放大器供應電壓VCC_PA1之一第二端,該第二電感器242包含電連接至與該第二功率放大器模組232相關聯之一第二功率放大器供應電壓VCC_PA2之一第二端,且該第三電感器243包含電連接至與該第三功率放大器模組233相關聯之一第三功率放大器供應電壓VCC_PA3之一第二 端。該第一功率放大器模組231至該第三功率放大器模組233亦經組態以產生已提供給該PMIC 234之第一控制電壓VCONTROL1至第三控制電壓VCONTROL3PMIC 234 has been configured to generate a regulated voltage V REG, the regulated voltage V REG is supplied to the first end of one of the third inductor 241 to 243 are each of the first inductor. The first inductor 241 to the third inductor 243 each include a second end electrically connected to one of the power amplifier supply voltages of the respective ends of the power amplifier modules. For example, the first inductor 241 includes a second end electrically coupled to one of the first power amplifier supply voltages V CC — PA1 associated with the first power amplifier module 231 , the second inductor 242 including an electrical connection to The second power amplifier module 232 is associated with one of the second power amplifiers to supply one of the second ends of the voltage V CC — PA2 , and the third inductor 243 includes an electrical connection to one of the third power amplifier modules 233 . The third power amplifier supplies a second end of one of the voltages V CC — PA3 . The first power amplifier module 231 to the third power amplifier module 233 are also configured to generate a first control voltage V CONTROL1 to a third control voltage V CONTROL3 that have been supplied to the PMIC 234.

可使用該PMIC 234以基於接收自一啟用或作用中功率放大器模組之一控制電壓控制經調節電壓VREG之電壓位準。例如,當啟用該第一功率放大器模組231上之一功率放大器時,可使用該PMIC 234以基於該第一控制電壓VCONTROL1之一電壓位準控制該第一功率放大器供應電壓VCC_PA1之一電壓位準。類似地,當啟用該第二功率放大器模組232上之一功率放大器時,可使用該PMIC 234以基於該第二控制電壓VCONTROL2之一電壓位準控制該第二功率放大器供應電壓VCC_PA2之一電壓位準。同樣地,當啟用該第三功率放大器模組233上之一功率放大器時,可使用該PMIC 234以基於該第三控制電壓VCONTROL3之一電壓位準控制該第三功率放大器供應電壓VCC_PA3之一電壓位準。在某些實施方案中,可使用諸如一共用電話板跡線之一共用電連接件將該第一控制電壓VCONTROL1至該第三控制電壓VCONTROL3提供給該PMIC 234,且該多頻帶功率放大器系統230可經組態使得每次最多該第一控制電壓VCONTROL1至該第三控制電壓VCONTROL3之一者處於作用中。 The PMIC 234 can be used to control the voltage level of the regulated voltage V REG based on a control voltage received from one of the enabled or active power amplifier modules. For example, when the first power amplifier module to enable one of the power amplifier 231, the PMIC 234 may be used to control voltage based on the first voltage level V CONTROL1 one controlling the first one of the power amplifier supply voltage V CC_PA1 Voltage level. Similarly, when the second power amplifier module to enable one of the power amplifier 232, the PMIC 234 may be used based on the second control voltage V CONTROL2 one voltage level to control the second power amplifier supply voltage V CC_PA2 of A voltage level. Similarly, when one of the power amplifiers on the third power amplifier module 233 is enabled, the PMIC 234 can be used to control the third power amplifier supply voltage V CC — PA3 based on one of the third control voltages V CONTROL3 . A voltage level. In some embodiments, the first control voltage V CONTROL1 to the third control voltage V CONTROL3 can be provided to the PMIC 234 using a common electrical connection such as a common telephone board trace, and the multi-band power amplifier System 230 can be configured such that at most one of the first control voltage V CONTROL1 to the third control voltage V CONTROL3 is active at a time.

以類似於先前關於圖14A至圖14B描述之一方式,該等功率放大器模組231至233之各者可包含用以調整一各自功率放大器供應電壓以追蹤藉由該功率放大器模組放大之一RF信號之波封之一誤差放大器。因此,圖17A之多頻帶功率放大器系統230圖解說明其中該第一功率放大器供應電壓VCC_PA1至該第三功率放大器供應電壓VCC_PA3可為使用由該PMIC 234產生之一共同經調節電壓VREG之波封追蹤供應器。 In a manner similar to that previously described with respect to Figures 14A-14B, each of the power amplifier modules 231 through 233 can include one for adjusting a respective power amplifier supply voltage to track one of the amplifications by the power amplifier module. One of the wave amplifiers of the RF signal is an error amplifier. Accordingly, the multi-band power amplifier system 230 of FIG. 17A illustrates that the first power amplifier supply voltage V CC — PA1 to the third power amplifier supply voltage V CC — PA3 may be a common regulated voltage V REG generated by the PMIC 234. Wave seal tracking provider.

圖17B係根據另一實施例之一多頻帶功率放大器系統240之一示意方塊圖。該經圖解說明之多頻帶功率放大器系統240包含第一功率 放大器模組231至第三功率放大器模組233、PMIC 234及第一電感器241至第三電感器234。圖17B之多頻帶功率放大器系統240類似於圖17A之多頻帶功率放大器系統230,惟圖17B之多頻帶功率放大器系統240圖解說明其中該第一電感器241至該第三電感器243已分別安置在該第一功率放大器模組231至該第三功率放大器模組233外部之一組態除外。例如,該第一電感器241至該第三電感器234可安置在與該多頻帶功率放大器系統240相關聯之一電話板上。本文中的教示可適用於其中在一功率放大器模組、一電話板或其等之一組合上實施一電感器之組態。 Figure 17B is a schematic block diagram of one of the multi-band power amplifier systems 240 in accordance with another embodiment. The illustrated multi-band power amplifier system 240 includes a first power The amplifier module 231 is connected to the third power amplifier module 233, the PMIC 234, and the first to third inductors 241 to 234. The multi-band power amplifier system 240 of Figure 17B is similar to the multi-band power amplifier system 230 of Figure 17A, except that the multi-band power amplifier system 240 of Figure 17B illustrates that the first inductor 241 to the third inductor 243 have been separately disposed. Except for one configuration outside the first power amplifier module 231 to the third power amplifier module 233. For example, the first inductor 241 to the third inductor 234 can be disposed on a telephone board associated with the multi-band power amplifier system 240. The teachings herein may be applied to configurations in which an inductor is implemented on a combination of a power amplifier module, a telephone board, or the like.

圖18展示圖12之波封追蹤系統160之電壓對時間之一曲線圖250之一實例。該曲線圖250包含電壓對時間之一第一曲線251及電壓對時間之一第二曲線252。該曲線圖250可對應於圖12之波封追蹤系統160之電壓之一實例。例如,該第一曲線251可對應於圖12之功率放大器供應電壓VCC_PA,且該第二曲線252可對應於圖12之誤差放大器51之輸出電壓。 18 shows an example of a graph 250 of voltage versus time for the envelope tracking system 160 of FIG. The graph 250 includes a first curve 251 of voltage versus time and a second curve 252 of voltage versus time. The graph 250 may correspond to one of the voltages of the envelope tracking system 160 of FIG. For example, the first curve 251 can correspond to the power amplifier supply voltage V CC — PA of FIG. 12 , and the second curve 252 can correspond to the output voltage of the error amplifier 51 of FIG. 12 .

圖19係根據一實施例之一多模式功率放大器(PA)模組260之一示意方塊圖。 19 is a schematic block diagram of one of a multi-mode power amplifier (PA) module 260 in accordance with an embodiment.

該多模式PA模組260包含經組態以接收一電池電壓之一第一或VBATT接針262a及經組態以接收一接地電壓之一第二或GND接針262b。此外,該多模式PA模組260進一步包含經組態以接收可藉由高頻帶3G/4G功率放大器電路263放大且提供給一第九接針262i之一高頻帶3G/4G信號之一第三或HB_3G/4G接針262c。可使用一外部濾波器及/或雙工器過濾提供給該第九接針262i之經放大高頻帶3G/4G信號。該多模式PA模組260進一步包含可接收可藉由高頻帶2G功率放大器電路264放大之一高頻帶2G信號之一第四或HB-2G接針262d。該多模式PA模組260進一步包含經組態以接收可藉由低頻帶2G功率放大器電路 265放大之一低頻帶2G信號之一第五或LB-2G接針262e。此外,該多模式PA模組260包含經組態以可藉由低頻帶3G/4G功率放大器電路266放大且提供給一第十三接針262m之一低頻帶3G/4G信號之一第六或LB_3G/4G接針262f。可使用一外部濾波器及/或雙工器過濾提供給第十三接針262m之經放大低頻帶3G/4G信號。 The multi-mode PA module 260 includes a first or V BATT pin 262a configured to receive a battery voltage and a second or GND pin 262b configured to receive a ground voltage. In addition, the multi-mode PA module 260 further includes one of the high-band 3G/4G signals configured to receive one of the high-band 3G/4G signals that can be amplified by the high-band 3G/4G power amplifier circuit 263 and provided to a ninth pin 262i. Or HB_3G/4G pin 262c. The amplified high band 3G/4G signal provided to the ninth pin 262i can be filtered using an external filter and/or duplexer. The multi-mode PA module 260 further includes a fourth or HB-2G pin 262d that can receive one of the high-band 2G signals that can be amplified by the high-band 2G power amplifier circuit 264. The multi-mode PA module 260 further includes a fifth or LB-2G pin 262e configured to receive one of the low band 2G signals that can be amplified by the low band 2G power amplifier circuit 265. In addition, the multi-mode PA module 260 includes one of the low-band 3G/4G signals configured to be amplified by the low-band 3G/4G power amplifier circuit 266 and provided to a thirteenth pin 262m. LB_3G/4G pin 262f. The amplified low band 3G/4G signal provided to the thirteenth pin 262m can be filtered using an external filter and/or duplexer.

可使用一第七接針262g(POWER CTRL)以對一功率放大器控制區塊270提供一功率控制信號,在某些實施方案中,該功率放大器控制區塊270可為一毫米波行動寬頻(MMB)功率放大器控制系統。該多模式PA模組260進一步包含可電連接至一數位控制區塊269之一第八或串列周邊介面(SPI)接針262h。該功率放大器控制區塊270及該數位控制區塊269可用以容許外部電路控制該多模式PA模組260之功能性,諸如選擇一功率模式或作用路徑(active path)。該功率放大器控制區塊270及/或該數位控制區塊269可經組態以控制該多模式PA模組260之其他組件或區塊。例如,在經圖解說明之組態中,該功率放大器控制區塊270經組態以控制一切換控制區塊268。 A seventh pin 262g (POWER CTRL) can be used to provide a power control signal to a power amplifier control block 270. In some embodiments, the power amplifier control block 270 can be a millimeter wave mobile broadband (MMB). ) Power amplifier control system. The multi-mode PA module 260 further includes an eighth or serial peripheral interface (SPI) header 262h electrically connectable to a digital control block 269. The power amplifier control block 270 and the digital control block 269 can be used to allow external circuitry to control the functionality of the multi-mode PA module 260, such as selecting a power mode or active path. The power amplifier control block 270 and/or the digital control block 269 can be configured to control other components or blocks of the multi-mode PA module 260. For example, in the illustrated configuration, the power amplifier control block 270 is configured to control a switch control block 268.

該切換控制區塊268可用以藉由控制切換器267選擇該多模式PA模組260之作用路徑。在經圖解說明之組態中,該切換器267係經組態以接收第七輸入信號之一雙極七投(DP7T)切換器。特定言之,該切換器267經組態以自一第十二或PCS接針262l接收一第一信號;自一第十一或DCS接針262k接收一第二信號;自一第十或RX1接針262j接收一第三信號;自該高頻帶2G功率放大器電路264接收一第四信號;自該低頻帶2G功率放大器電路265接收一第五信號;自一第十四或RX2接針262n接收一第六信號;及自一第十五或GSM接針262o接收一第七信號。該切換器267包含電連接至可連接至一高頻帶天線(HB ANT)之一第十六接針262p之一第一輸出。該切換器267進一步包含電連接至可連接至一低頻帶天線(LB ANT)之一第十七接針262q之一第二輸出。 一定向耦合器275可用以感測分別提供給該第十六接針262p及該第十七接針262q上之高頻帶天線及低頻帶天線之信號。該定向耦合器275包含電連接至一第十八接針262r之一第一埠及電連接至一第十九接針262s之一第二埠。 The switch control block 268 can be used to control the active path of the multi-mode PA module 260 by controlling the switch 267. In the illustrated configuration, the switch 267 is configured to receive a bipolar seven-throw (DP7T) switch of one of the seventh input signals. In particular, the switch 267 is configured to receive a first signal from a twelfth or PCS pin 262l; to receive a second signal from an eleventh or DCS pin 262k; from a tenth or RX1 The pin 262j receives a third signal; receives a fourth signal from the high band 2G power amplifier circuit 264; receives a fifth signal from the low band 2G power amplifier circuit 265; receives from a fourteenth or RX2 pin 262n a sixth signal; and receiving a seventh signal from a fifteenth or GSM pin 262o. The switch 267 includes a first output electrically coupled to a sixteenth pin 262p that is connectable to one of the high frequency band antennas (HB ANT). The switch 267 further includes a second output electrically coupled to one of the seventeenth pins 262q that is connectable to one of the low band antennas (LB ANT). A directional coupler 275 can be used to sense the signals provided to the high band antenna and the low band antenna on the sixteenth pin 262p and the seventeenth pin 262q, respectively. The directional coupler 275 includes a first turn electrically connected to one of the eighteenth pins 262r and a second turn electrically connected to one of the nineteenth pins 262s.

雖然圖19圖解說明一多模式PA之一實例,但是多模式PA可實施於其他實施方案中,包含使用一不同電路配置之組態、放大信號頻帶之一不同組合之組態及使用更多或更少組件及/或接針之組態。 Although FIG. 19 illustrates one example of a multi-mode PA, multi-mode PA may be implemented in other implementations, including configuration using a different circuit configuration, configuration of a different combination of amplified signal bands, and use more or Less component and / or pin configuration.

應用application

上文描述之一些實施例已結合無線器件或行動電話提供實例。然而,該等實施例之原理及優點可用於需要波封追蹤器之任何其他系統或裝置。 Some of the embodiments described above have been provided in connection with wireless devices or mobile phones. However, the principles and advantages of such embodiments can be applied to any other system or device that requires a wave seal tracker.

可在各種電子器件中實施此等波封追蹤器。該等電子器件之實例可包含(但不限於)消費型電子產品、該等消費型電子產品之部分、電子測試設備等等。該等電子器件之實例亦可包含(但不限於)記憶體晶片、記憶體模組、光學網路或其他通信網路之電路及磁碟機電路。該等消費型電子產品可包含(但不限於)一行動電話、一電話、一電視機、一電腦監視器、一電腦、一掌上型電腦、一個人數位助理(PDA)、一微波爐、一冰箱、一汽車、一立體聲系統、一卡帶錄像機或播放器、一DVD播放器、一CD播放器、一VCR、一MP3播放器、一收音機、一錄攝影機、一相機、一數位相機、一可攜式記憶體晶片、一洗衣器、一乾衣器、一洗衣器/乾衣器、一影印機、一傳真機、一掃描器、一多功能周邊器件、一腕錶、一時鐘等等。此外,該等電子器件可包含未完成產品。 These wave seal trackers can be implemented in a variety of electronic devices. Examples of such electronic devices may include, but are not limited to, consumer electronic products, portions of such consumer electronic products, electronic testing devices, and the like. Examples of such electronic devices may also include, but are not limited to, memory chips, memory modules, circuits of optical networks or other communication networks, and disk drive circuits. The consumer electronic products may include, but are not limited to, a mobile phone, a telephone, a television, a computer monitor, a computer, a palmtop computer, a PDA, a microwave oven, a refrigerator, a car, a stereo system, a video cassette recorder or player, a DVD player, a CD player, a VCR, an MP3 player, a radio, a video camera, a camera, a digital camera, a portable A memory chip, a washer, a clothes dryer, a washer/dryer, a photocopier, a facsimile machine, a scanner, a multifunction peripheral device, a wristwatch, a clock, and the like. Additionally, the electronic devices can include unfinished products.

結論in conclusion

除非上下文明確另有要求,否則貫穿描述及申請專利範圍,字詞「包括」等等係理解為包含性意義,而非理解為排他性或詳盡性意 義;即理解為「包含但不限於」之意義。如本文普遍使用,字詞「耦合」指代可直接連接或藉由一或多個中間元件連接之兩個或更多個元件。同樣地,如本文普遍使用,字詞「連接」指代可直接連接或藉由一或多個中間元件連接之兩個或更多個元件。此外,字詞「本文」、「上文」、「下文」及類似含義之字詞在用於本申請案中時應指代本申請案之整體而非本申請案之任何特定部分。在上下文允許的情況下,在上文詳細描述中使用單數或複數之字詞亦可分別包含複數或單數。字詞「或」涉及兩個或兩個以上項目之一清單,該字詞涵蓋字詞之所有以下解釋:清單中之任意項目、清單中之所有項目或清單中之項目之任意組合。 Unless the context clearly requires otherwise, the words "including" and the like are understood to be inclusive and not to be construed as exclusive or exhaustive. Meaning; that is, the meaning of "including but not limited to". As used herein, the word "coupled" refers to two or more elements that may be directly connected or connected by one or more intermediate elements. Similarly, the term "connected" as used herein refers to two or more elements that can be directly connected or connected by one or more intervening elements. In addition, the words "herein", "above", "below" and the like are used in this application to refer to the whole of this application and not to any particular part of this application. Where the context permits, the use of the singular or plural <RTI ID=0.0> </ RTI> in the above detailed description may also include the plural or singular. The word "or" refers to a list of two or more items that cover all of the following interpretations of a word: any item in the list, all items in the list, or any combination of items in the list.

此外,除非另有明確規定或如所使用之上下文內之其他理解,否則本文中使用之條件用語(尤其是諸如「可」、「可以」、「會」、「可能」、「例如」、「舉例而言」、「諸如」及類似用語)通常旨在傳達某些實施例包含某些特徵、元件及/或狀態而其他實施例不包含某些特徵、元件及/或狀態。因此,此條件用語通常不旨在暗示一或多個實施例始終需要特徵、元件及/或狀態或一或多個實施例必需包含用於在作者輸入或提示或無作者輸入或提示之情況下決定此等特徵、元件及/或狀態是否包含或執行於任何某些實施例中之邏輯。 In addition, the terms used herein (especially such as "may", "may", "will", "may", "for example", "", unless otherwise expressly stated or otherwise understood in the context of use. The use of certain features, elements and/or states in the embodiments of the present invention is not intended to be limited. Therefore, such conditional terms are generally not intended to imply that one or more embodiments are always required to require features, elements and/or states or one or more embodiments must be included for use in the case of author input or prompts or without author input or prompts. It is determined whether such features, elements and/or states are included or performed in the logic of any of the embodiments.

本發明之實施例之上述詳細描述不旨在詳盡或將本發明限制於上文所揭示之精確形式。雖然上文為闡釋之目的描述本發明之某些實施例及實例,但是如熟習相關技術者所認知,各種等效修改在本發明之範圍內亦係可行的。舉例而言,雖然程序或方塊以給定順序呈現,但是替代實施例可以不同順序執行具有步驟之常式或採用具有方塊之系統,且一些程序或方塊可刪除、移動、添加、細分、組合及/或修改。此等程序或方塊之各者可以多種不同方式實施。又,雖然程序或方塊有時係展示為串列執行,但是可代替性地並列執行或可在不同時 間執行此等程序或方塊。 The above detailed description of the embodiments of the invention is not intended to Although certain embodiments and examples of the invention have been described above for illustrative purposes, various equivalent modifications are possible within the scope of the invention as appreciated by those skilled in the art. For example, although a program or block is presented in a given order, alternative embodiments can perform a routine with steps or a system with blocks in a different order, and some programs or blocks can be deleted, moved, added, subdivided, combined, and / or modify. Each of these programs or blocks can be implemented in a number of different ways. Also, although the program or block is sometimes shown as being executed in tandem, it may be performed in parallel or alternatively at different times. Execute these programs or blocks.

本文提供之本發明之教示可應用於其他系統,而不一定為上述系統。上述各種實施例之元件及動作可經組合以提供進一步實施例。 The teachings of the present invention provided herein are applicable to other systems and are not necessarily the systems described above. The elements and acts of the various embodiments described above can be combined to provide further embodiments.

雖然已描述本發明之某些實施例,但是此等實施例僅藉由實例而呈現且並不旨在限制本揭示內容之範疇。實際上,本文所述之新穎方法及系統可以各種其他形式體現;此外,在不脫離本揭示內容之精神的情況下,可作出呈本文所述之方法及系統形式之各種省略、替代及變化。隨附申請專利範圍及其等效物旨在涵蓋如將落於本揭示內容之範疇及精神內之此等形式或修改。 Although certain embodiments of the present invention have been described, the embodiments are presented by way of example only and are not intended to limit the scope of the disclosure. In fact, the novel methods and systems described herein may be embodied in a variety of other forms. Also, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. The scope of the accompanying claims and the equivalents thereof are intended to cover such forms or modifications as may fall within the scope and spirit of the disclosure.

21‧‧‧電池 21‧‧‧Battery

50‧‧‧波封追蹤系統 50‧‧‧ Wave Sealing System

51‧‧‧誤差放大器 51‧‧‧Error amplifier

52‧‧‧回饋電路 52‧‧‧Feedback circuit

53‧‧‧降壓轉換器 53‧‧‧Buck Converter

54‧‧‧升壓轉換器 54‧‧‧Boost Converter

ENVELOPE‧‧‧波封信號 ENVELOPE‧‧‧ wave seal signal

IERROR‧‧‧誤差電流 I ERROR ‧‧‧Error current

VBATT‧‧‧電池電壓 V BATT ‧‧‧Battery voltage

VBOOST‧‧‧升壓電壓 V BOOST ‧‧‧Boost voltage

VCC_PA‧‧‧功率放大器供應電壓 V CC_PA ‧‧‧Power amplifier supply voltage

Claims (31)

一種行動器件,其包括:一功率放大器,其經組態以接收一功率放大器供應電壓且放大一射頻(RF)輸入信號以產生一RF輸出信號;一降壓轉換器,其經組態以將一電池電壓轉換為一降壓電壓,該降壓轉換器經組態以基於一誤差電流控制該降壓電壓之一量值;及一誤差放大器,其經組態以基於該RF輸入信號之一波封而產生一輸出電流,且藉由使用該輸出電流調整該降壓電壓之該量值而產生該功率放大器供應電壓,該誤差放大器經組態以藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 A mobile device comprising: a power amplifier configured to receive a power amplifier supply voltage and amplify a radio frequency (RF) input signal to generate an RF output signal; a buck converter configured to a battery voltage is converted to a step-down voltage, the buck converter is configured to control a magnitude of the step-down voltage based on an error current; and an error amplifier configured to be based on the one of the RF input signals The wave seal generates an output current, and the power amplifier supply voltage is generated by adjusting the magnitude of the buck voltage using the output current, the error amplifier being configured to be measured by a magnitude relative to the output current The buck converter is controlled by varying the magnitude of the error current. 如請求項1之行動器件,其進一步包括一AC耦合電容器,該AC耦合電容器電連接在該功率放大器供應電壓與經組態以產生該輸出電流之該誤差放大器之一輸出之間。 The mobile device of claim 1, further comprising an AC coupling capacitor electrically coupled between the power amplifier supply voltage and an output of the error amplifier configured to generate the output current. 如請求項1之行動器件,其中該降壓轉換器包含一降壓控制器、一降壓電感器及複數個降壓切換器,該降壓控制器經組態以使用該誤差電流以控制該複數個降壓切換器之一狀態以控制通過該降壓電感器之一電流。 The mobile device of claim 1, wherein the buck converter comprises a buck controller, a buck inductor, and a plurality of buck switches, the buck controller configured to use the error current to control the One of a plurality of buck switches is in a state to control current through one of the buck inductors. 如請求項3之行動器件,其中該誤差電流包含一非反相誤差電流分量及一反相誤差電流分量,該降壓轉換器包含一電流比較器,該電流比較器經組態以藉由比較該非反相誤差電流分量與該反相誤差電流分量而控制該複數個降壓切換器之該狀態。 The mobile device of claim 3, wherein the error current comprises a non-inverting error current component and an inverting error current component, the buck converter comprising a current comparator configured to compare by The non-inverting error current component and the inverted error current component control the state of the plurality of buck switches. 如請求項1之行動器件,其中該誤差放大器包含經組態以產生該輸出電流之一第一對電晶體及經組態以產生該誤差電流之一第 二對電晶體,該第二對電晶體係實施為該第一對電晶體之一複本。 The mobile device of claim 1, wherein the error amplifier includes a first pair of transistors configured to generate the output current and configured to generate the error current A pair of transistors, the second pair of electromorphic systems being implemented as a replica of the first pair of transistors. 如請求項1之行動器件,其進一步包括經組態以接收該RF輸出信號之一天線。 The mobile device of claim 1, further comprising an antenna configured to receive the RF output signal. 如請求項1之行動器件,其進一步包括經組態以產生該RF輸入信號之該波封之一收發器。 The mobile device of claim 1, further comprising one of the wave seals configured to generate the RF input signal. 如請求項1之行動器件,其進一步包括經組態以產生該電池電壓之一電池。 The mobile device of claim 1, further comprising a battery configured to generate the battery voltage. 如請求項8之行動器件,其中使用該電池電壓對該誤差放大器供電。 The mobile device of claim 8, wherein the error amplifier is powered using the battery voltage. 如請求項1之行動器件,其進一步包括一升壓轉換器,該升壓轉換器經組態以將該電池電壓轉換為一升壓電壓,該升壓電壓具有大於該電池電壓之一電壓量值之一電壓量值,使用該升壓電壓對該誤差放大器供電。 The mobile device of claim 1, further comprising a boost converter configured to convert the battery voltage to a boost voltage having a voltage greater than one of the battery voltages One of the values of the voltage magnitude that is used to power the error amplifier. 一種用於產生一功率放大器供應電壓之波封追蹤器,該波封追蹤器包括:一降壓轉換器,其經組態以將一電池電壓轉換為一降壓電壓,該降壓轉換器經組態以基於一誤差電流控制該降壓電壓之一量值;及一誤差放大器,其經組態以基於一波封信號產生一輸出電流,且藉由使用該輸出電流調整該降壓電壓之該量值而產生該功率放大器供應電壓,該誤差放大器經組態以藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 A wave seal tracker for generating a power amplifier supply voltage, the wave seal tracker comprising: a buck converter configured to convert a battery voltage to a step-down voltage, the buck converter Configuring to control a magnitude of the step-down voltage based on an error current; and an error amplifier configured to generate an output current based on a envelope signal and adjusting the step-down voltage by using the output current The magnitude produces the power amplifier supply voltage, the error amplifier being configured to control the buck converter by varying a magnitude of the error current relative to a magnitude of the output current. 如請求項11之波封追蹤器,其中該誤差放大器包含經組態以接收該波封信號之一第一輸入、一第二輸入及經組態以產生該輸出 電流之一輸出。 The wave seal tracker of claim 11, wherein the error amplifier includes a first input configured to receive the wave seal signal, a second input, and configured to generate the output One of the current outputs. 如請求項12之波封追蹤器,其進一步包括電連接在該誤差放大器之該第二輸入與該誤差放大器之該輸出之間之一回饋電路。 The wave seal tracker of claim 12, further comprising a feedback circuit electrically coupled between the second input of the error amplifier and the output of the error amplifier. 如請求項12之波封追蹤器,其進一步包括安置在該誤差放大器之該輸出與該功率放大器供應電壓之間之一AC耦合電容器。 The wave seal tracker of claim 12, further comprising an AC coupling capacitor disposed between the output of the error amplifier and the power amplifier supply voltage. 如請求項11之波封追蹤器,其中使用該電池電壓對該誤差放大器供電。 A wave seal tracker as claimed in claim 11, wherein the error amplifier is powered using the battery voltage. 如請求項11之波封追蹤器,其進一步包括一升壓轉換器,該升壓轉換器經組態以將該電池電壓轉換為一升壓電壓,該升壓電壓具有大於該電池電壓之一電壓量值之一電壓量值,使用該升壓電壓對該誤差放大器供電。 The wave seal tracker of claim 11, further comprising a boost converter configured to convert the battery voltage to a boost voltage having one of greater than the battery voltage A voltage magnitude of a voltage magnitude that is used to power the error amplifier. 如請求項11之波封追蹤器,其中該降壓轉換器包含一降壓控制器、一降壓電感器及複數個降壓切換器,該降壓控制器經組態以使用該誤差電流以控制該複數個降壓切換器之一狀態以控制通過該降壓電感器之一電流。 The wave seal tracker of claim 11, wherein the buck converter comprises a buck controller, a buck inductor, and a plurality of buck switches, the buck controller configured to use the error current to A state of one of the plurality of buck switches is controlled to control a current through the buck inductor. 如請求項17之波封追蹤器,其中該誤差電流包含一非反相誤差電流分量及一反相誤差電流分量,該降壓轉換器包含一電流比較器,該電流比較器經組態以藉由比較該非反相誤差電流分量與該反相誤差電流分量而控制該複數個降壓切換器之該狀態。 The wave seal tracker of claim 17, wherein the error current comprises a non-inverting error current component and an inverting error current component, the buck converter comprising a current comparator configured to borrow The state of the plurality of buck switches is controlled by comparing the non-inverted error current component with the inverted error current component. 如請求項11之波封追蹤器,其中該誤差放大器包含經組態以產生該輸出電流之一第一對電晶體及經組態以產生該誤差電流之一第二對電晶體,該第二對電晶體係實施為該第一對電晶體之一複本。 The wave seal tracker of claim 11, wherein the error amplifier includes a first pair of transistors configured to generate the output current and a second pair of transistors configured to generate the error current, the second The electro-crystalline system is implemented as a replica of the first pair of transistors. 如請求項19之波封追蹤器,其中該第一對電晶體包含一第一p型場效電晶體(PFET)及一第一n型場效電晶體(NFET),且該第二對電晶體包含一第二PFET及一第二NFET。 The wave seal tracker of claim 19, wherein the first pair of transistors comprises a first p-type field effect transistor (PFET) and a first n-type field effect transistor (NFET), and the second pair of cells The crystal includes a second PFET and a second NFET. 一種產生一功率放大器供應電壓之方法,該方法包括:使用一降壓轉換器由一電池電壓產生一降壓電壓;基於一誤差電流控制該降壓電壓之一量值;使用一誤差放大器基於一波封信號產生一輸出電流;藉由使用該輸出電流調整該降壓電壓之該量值而產生該功率放大器供應電壓;及藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 A method of generating a power amplifier supply voltage, the method comprising: generating a step-down voltage from a battery voltage using a buck converter; controlling a magnitude of the step-down voltage based on an error current; using an error amplifier based on a The envelope signal generates an output current; the power amplifier supply voltage is generated by adjusting the magnitude of the step-down voltage using the output current; and the amount of the error current is changed by a magnitude relative to the output current The buck converter is controlled by the value. 如請求項21之方法,其中該降壓轉換器包含一降壓電感器及複數個降壓切換器,該方法進一步包括藉由基於該誤差電流控制該複數個降壓切換器之一狀態而控制通過該降壓電感器之一電流。 The method of claim 21, wherein the buck converter comprises a buck inductor and a plurality of buck switches, the method further comprising controlling by controlling a state of the plurality of buck switches based on the error current A current through one of the buck inductors. 如請求項22之方法,其中該誤差電流包含一非反相誤差電流分量及一反相誤差電流分量,該方法進一步包含藉由比較該非反相誤差電流分量與該反相誤差電流分量控制該複數個降壓切換器之該狀態。 The method of claim 22, wherein the error current comprises a non-inverted error current component and an inverted error current component, the method further comprising controlling the complex by comparing the non-inverted error current component with the inverted error current component This state of the buck switch. 如請求項21之方法,其進一步包括對一功率放大器提供該功率放大器供應電壓。 The method of claim 21, further comprising providing the power amplifier supply voltage to a power amplifier. 如請求項21之方法,其進一步包括使用該電池電壓對該誤差放大器供電。 The method of claim 21, further comprising powering the error amplifier using the battery voltage. 如請求項21之方法,其進一步包括使用一升壓轉換器產生一升壓電壓及使用該升壓電壓對該誤差放大器供電。 The method of claim 21, further comprising generating a boost voltage using a boost converter and using the boost voltage to power the error amplifier. 一種多晶片模組(MCM),其包括:一降壓轉換器,其經組態以將一電池電壓轉換為一降壓電壓,該降壓轉換器經組態以基於一誤差電流控制該降壓電壓之一量值;及 一誤差放大器,其經組態以基於一波封信號產生一輸出電流且藉由使用該輸出電流調整該降壓電壓之該量值而產生該功率放大器供應電壓,該誤差放大器經組態以藉由相對於該輸出電流之一量值改變該誤差電流之一量值而控制該降壓轉換器。 A multi-chip module (MCM) comprising: a buck converter configured to convert a battery voltage to a step-down voltage, the buck converter configured to control the drop based on an error current One of the voltages; and An error amplifier configured to generate an output current based on a envelope signal and to generate the power amplifier supply voltage by adjusting the magnitude of the step-down voltage using the output current, the error amplifier configured to lend The buck converter is controlled by varying a magnitude of the error current relative to a magnitude of the output current. 如請求項27之MCM,其中該誤差放大器包含經組態以接收該波封信號之一第一輸入、一第二輸入及經組態以產生該功率放大器供應電壓之一輸出。 The MCM of claim 27, wherein the error amplifier includes a first input configured to receive the envelope signal, a second input, and an output configured to generate the power amplifier supply voltage. 如請求項28之MCM,其進一步包括電連接在該誤差放大器之該第二輸入與該誤差放大器之該輸出之間之一回饋電路。 The MCM of claim 28, further comprising a feedback circuit electrically coupled between the second input of the error amplifier and the output of the error amplifier. 如請求項28之MCM,其進一步包括安置在該誤差放大器之該輸出與該功率放大器供應電壓之間之一AC耦合電容器。 The MCM of claim 28, further comprising an AC coupling capacitor disposed between the output of the error amplifier and the power amplifier supply voltage. 如請求項27之MCM,其進一步包括經組態以接收該功率放大器供應電壓之一功率放大器。 The MCM of claim 27, further comprising a power amplifier configured to receive the power amplifier supply voltage.
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