TWI582865B - 接合裝置 - Google Patents

接合裝置 Download PDF

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TWI582865B
TWI582865B TW102123003A TW102123003A TWI582865B TW I582865 B TWI582865 B TW I582865B TW 102123003 A TW102123003 A TW 102123003A TW 102123003 A TW102123003 A TW 102123003A TW I582865 B TWI582865 B TW I582865B
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light
bonding
laser
laser light
tool base
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TW102123003A
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TW201401392A (zh
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田中榮次
安吉裕之
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澁谷工業股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B23K26/22—Spot welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Description

接合裝置
本發明係關於一種接合裝置，更詳而言之，係關於一種利用雷射光將半導體晶片加熱並接合於基板上的接合裝置。
以往，將接合頭所保持的接合工具以雷射光加熱，並利用該接合工具加熱半導體晶片以將其接合於基板上的接合裝置已為公眾所知悉(例如專利文獻1、專利文獻2)。
在該等習知的接合裝置中，係從形成於接合頭的殼體上的工具吸引通路對殼體內供給負壓，由於對殼體內所供給的負壓也會作用在接合工具的貫通孔中，故可將半導體晶片吸附保持於接合工具的底面。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2010-129890號公報
[專利文獻2]日本特開2009-182162號公報
另外，在利用以往的接合裝置進行接合作業時，會使液體的助焊劑等物質附著於凸塊。然而，若像這樣在半導體晶片的接合時使用助焊劑等物 質的話，會產生以下的問題。亦即，在將半導體晶片加熱而凸塊熔融時助焊劑等物質會因為熱而蒸發，該蒸發的助焊劑等物質會經由上述接合工具的貫通孔被吸入殼體內，而附著於該殼體的內面。因此，在利用接合裝置重複半導體晶片的接合作業的期間，助焊劑等物質會附著在殼體內的聚光透鏡或可由雷射光穿透的透光構件的表面上，進而遮住了雷射光的穿透，因此，會有利用雷射光將接合工具加熱時的加熱效率降低這樣的問題存在。
有鑑於上述問題，請求項1所記載的本發明係一種接合裝置，包含：可載置基板的基板台；振盪發出雷射光的雷射振盪器；保持電子零件並將其接合於基板上的接合頭；將上述雷射振盪器所振盪發出之雷射光導入上述接合頭的導光機構；設置於上述接合頭且可由雷射光穿透的工具基座；以及設置於上述工具基座的電子零件吸引通路；該接合裝置利用穿透過上述工具基座的雷射光將電子零件加熱並接合於基板上；該接合裝置的特徵為： 上述導光機構，將具有各自相異之導光路徑的複數道雷射光導入上述接合頭並使其穿透過上述工具基座，上述電子零件的吸引通路具有與上述各道雷射光的照射方向交叉的區間，同時將該交叉之區間配置在上述各道雷射光的導光路徑之間。
另外，請求項2所記載的本發明，如上述請求項1的構造，其中，上述導光機構，引導上述各道雷射光在上述工具基座的端面形成排列成矩陣狀圖案的複數個照射點。
另外，請求項3所記載的本發明，如上述請求項1或請求項2的構造，其中，被上述導光機構導入接合頭的各道雷射光的光束分布形成高斯模式。
再者，請求項4所記載的本發明，如上述請求項1至請求項3中任一項的構造，其中，上述工具基座係由上層側的第1透光構件與下層側的第2透光構件堆疊所構成；上述吸引通路係由形成於第2透光構件的軸方向孔以及與該軸方向孔連通且形成於第1透光構件與第2透光構件的抵接面中的至少其中一方的溝部所構成。
根據請求項1的構造，在利用接合裝置進行接合作業時使用助焊劑等物質的情況下，當該助焊劑等物質蒸發而被吸入吸引通路時，助焊劑等物質會附著於吸引通路。然而，吸引通路的設置範圍較小，而且位於雷射光的導光路徑之間。因此，比起以往而言，更可防止因為所蒸發的助焊劑等物質導致雷射光的加熱效率降低。另外，由於被助焊劑等物質所污染的區域有限，故可提高接合裝置的維護保養容易度。
另外，根據請求項2的構造，由於照射點排列成矩陣狀，故配置上述吸引通路變得比較容易。
另外，根據請求項3的發明，由於照射點的光束分布形成高斯模式，故吸引通路會被相對強度較低的雷射光照射到，故可抑制雷射光的透光率降低。
再者，根據請求項4的發明，吸引通路比較容易製作，且藉由使第1透光構件與第2透光構件分離，助焊劑等物質累積的吸引通路更容易清潔。因此，可提高吸引通路的維護保養容易度。
1‧‧‧接合裝置
2‧‧‧基板
3‧‧‧半導體晶片
4‧‧‧基板台
5‧‧‧接合頭
5A、22‧‧‧殼體
5B、12A、13A、14A‧‧‧貫通孔
6‧‧‧升降加壓機構
7、7’‧‧‧雷射振盪器
8‧‧‧導光機構
11、12‧‧‧透光構件
12B、25A‧‧‧溝部
13‧‧‧工具基座
14‧‧‧接合工具
15‧‧‧聚光透鏡
16‧‧‧反射鏡子
21‧‧‧光纖
23‧‧‧晶片吸引通路
24‧‧‧安裝構件
25‧‧‧阻擋部
25B‧‧‧連通孔
26‧‧‧工具吸引通路
27、32‧‧‧負壓源
28、31‧‧‧導管
29‧‧‧連接通路
35‧‧‧凸塊
S1~S6‧‧‧照射點
L‧‧‧雷射光
II-II、III-III、IV-IV‧‧‧線段
圖1係表示本發明的一個實施例的構造圖。
圖2係沿著圖1的II-II線的主要部位的剖面圖。
圖3係沿著圖1的III-III線的主要部位的剖面圖。
圖4係表示沿著圖3的IV-IV線的雷射光的強度分布圖。
以下，根據圖式的實施例說明本發明，在圖1中，1為將半導體晶片3接合於基板2上的接合裝置1。該接合裝置1包含：支持上述基板2並在水平面內沿X-Y方向移動的基板台4；配置在上述基板台4的上方側的接合頭5；使該接合頭5升降的升降加壓機構6；可振盪發出雷射光L的雷射振盪器7；以及將雷射振盪器7所振盪發出的雷射光L導入上述接合頭5內的 導光機構8。
雖文後會有詳述，惟接合頭5具備筒狀的殼體5A，由二層的透光構件11、12所構成的工具基座13水平固定於該殼體5A的下端部。然後，將接合工具14以隨意裝卸的方式吸附保持於該工具基座13的底面，同時可將半導體晶片3以隨意裝卸的方式吸附保持於該接合工具14的底面。
導光機構8的一端以沿著水平方向的方式連接於上述殼體5A的側面上部，該導光機構8的另一端與雷射振盪器7連接。
從上述雷射振盪器7所振盪發出的雷射光L，經由導光機構8向殼體5A的軸心水平照射，同時被聚光透鏡15聚集成所需要的大小。然後，向水平方向照射的雷射光L，被配置在殼體5A內的上方中央部位的反射鏡子16反射而射向垂直下方，穿透過工具基座13並照射到接合工具14，而將該接合工具14加熱。藉此，接合工具14所保持的半導體晶片3也受到加熱。
上述基板台4、升降加壓機構6以及雷射振盪器7的動作被圖中未顯示的控制裝置所控制。當控制裝置使雷射振盪器7運作時會從雷射振盪器7振盪發出雷射光L，該雷射光L經由導光機構8被導入接合頭5之後照射到接合工具14並將其加熱。上述雷射振盪器7，可使用半導體雷射、YAG(yttrium aluminium garnet，釔鋁石榴石)雷射等的固體雷射，或是其他種類的雷射。
然後，本實施例的特徵為：將雷射振盪器7、導光機構8、工具基座13以及其周邊按照以下的方式構成，藉此防止在利用雷射光L將接合工具14加熱時加熱效率降低的情況。
如圖1至圖2所示的，本實施例的導光機構8，係由相同外徑的36條光纖21的光纖束所構成，經由各條光纖21的不同導光路徑的各道雷射光L被導入接合頭5。本實施例的雷射盪器7，係由各自獨立受到控制的36個雷射振盪器7’所構成，同時與其所對應的各條光纖21連接。然後，36條光纖21的一端(導光機構8的一端)，被保持於圓筒狀的殼體22內，同時透 過該殼體22以水平狀態連結於上述殼體5A的側面。上述聚光透鏡15被保持於殼體22內。
如圖2所示的，構成導光機構8的36條光纖21，係縱横以相等間隔分別配置各6條光纖的矩陣狀光纖束，並在該狀態下被保持於殼體22內。因此，當從雷射振盪器7振盪發出雷射光L時，雷射光L經由導光機構8的各條光纖21以矩陣狀穿透過工具基座13並照射到接合工具14(參照圖3)。然後，如該圖3所示的，各道雷射光L對接合工具14的照射點也形成矩陣狀。
另外，在本實施例中，各雷射光L的強度分布(光束分布)形成高斯模式(參照圖3、圖4的S1~S6)。在該高斯模式中，照射點的雷射光L，在其光軸的位置強度為最高，在光軸的周邊強度便降低(參照圖4)。亦即，在相隣的各道雷射光L之間的位置強度變弱。然後，利用此特徴，在本實施例中，在相隣列的雷射光L之間的位置設置晶片吸引通路23。
接著，說明工具基座13與周邊的構造，本實施例的工具基座13，以由藍寶石所構成的透光構件11為上層，以由石英玻璃所構成的透光構件12為下層，形成堆疊構造。
堆疊狀態的兩透光構件11、12嵌設於殼體5A的下端的內周圍部位。透光構件12的底面，受到環狀的安裝構件24支持，而形成與殼體5A的下端面大略相同高度的水平狀態。另一方面，在堆疊狀態中的透光構件11的頂面，被嵌設於殼體5A內的環狀阻擋部25推壓，以形成水平狀態的方式受到支持。藉此，構成工具基座13的兩透光構件11、12，在殼體5A內的下部以形成水平狀態的方式受到支持，同時透光構件11的底面與透光構件12的頂面以保持氣密的狀態互相接觸。
在本實施例中，跨殼體5A、阻擋部25以及工具基座13形成了工具吸引通路26，同時跨殼體5A、兩透光構件11、12以及接合工具14形成了晶片吸引通路23。當從負壓源27經由導管28對工具吸引通路26供給負壓時，便可將接合工具14吸附保持於工具基座13的底面(透光構件12的底面)。 另外，當從負壓源32經由導管31對晶片吸引通路23供給負壓時，便可將半導體晶片3吸附保持於被工具基座13所保持的接合工具14的底面。
對準設置成正方形的接合工具14的四個角落，跨上下的透光構件11、12貫穿設置了4個貫通孔13A，各個貫通孔13A的上端與形成於上述阻擋部25的底面的溝部25A連通。阻擋部25的溝部25A，透過跨該阻擋部25與殼體5A形成L字型的連通孔25B與上述導管28的一端連接。藉由上述4個貫通孔13A、阻擋部25的溝部25A以及連通孔25B構成工具吸引通路26。
導管28的另一端與負壓源27連接，該負壓源27被控制裝置控制其運作。在利用接合裝置1進行接合作業時控制裝置使負壓源27運作。因此，在接合作業中，由於對工具吸引通路26供給負壓，故接合工具14會被吸附保持於工具基座13的底面(透光構件12的底面)。
接著，根據圖1以及圖3說明晶片吸引通路23。在下層的透光構件12的中心貫穿設置了上下方向的貫通孔12A，然後在透光構件12的頂面形成了從該貫通孔12A的上端連接到殼體5A的內面的直線狀溝部12B。對準溝部12B的外側端的位置在殼體5A上貫穿設置了水平方向的貫通孔5B，該貫通孔5B與導管31的一端連接。
直線狀的溝部12B，以位於前述光纖21的照射點的相隣2列之間的方式，形成於上述透光構件12的頂面(參照圖3)。由於上述直線狀的溝部12B的全部範圍被透光構件11的底面所覆蓋，直線狀的溝部12B的內部空間形成從中心向外側延伸的水平方向孔。然後，藉由形成於透光構件12的貫通孔12A與上述溝部12B的內部空間在工具基座13內形成連接通路29。亦即，該連接通路29，在上述晶片吸引通路23中，形成與從各條光纖21所照射的各道雷射光L的照射方向交叉的區間。
另一方面，在接合工具14的中心貫穿設置了上下方向的貫通孔14A，當在工具基座13的底面吸附保持接合工具14時，接合工具14的貫通孔14A與工具基座13的貫通孔12A形成連通狀態(圖1的狀態)。在本實施例中，藉由接合工具14的貫通孔14A、連接通路29以及殼體5A的貫通孔5B構 成晶片吸引通路23。
殼體5A的貫通孔5B與導管31的一端連接，該導管31的另一端與負壓源32連接。該負壓源32被控制裝置控制其動作，在需要時控制裝置控制從負壓源32對晶片吸引通路23供給負壓，藉此便可將半導體晶片3吸附保持於接合工具14的底面。
在以上的構造中，由於在接合作業的開始時控制裝置控制從負壓源27對工具吸引通路26供給負壓，故接合工具14被吸附保持於工具基座13的底面。然後，控制裝置控制從負壓源31對晶片吸引通路23供給負壓，故半導體晶片3被吸附保持於接合工具14的底面。
之後，控制裝置，使基板台4運作，在將接合工具14所保持的半導體晶片3與基板2二者的位置對準的狀態下，利用上述升降加壓機構6使接合頭5下降。藉此，接合工具14所吸附保持的半導體晶片3與基板2抵接並受到推壓。從該時點開始控制裝置使雷射振盪器7運作以從雷射振盪器7(7’)振盪發出雷射光L。如是，複數道雷射光L透過由複數條光纖21所構成的導光機構8被導入殼體5A，在被聚光透鏡15聚集之後，被反射鏡子16反射而射向垂直方向，之後照射到工具基座13。如前所述的，由於複數條光纖21排列成矩陣狀，故當從各條光纖21對工具基座13照射雷射光L時，該等雷射光L的照射點亦形成矩陣狀(參照圖2、圖3)。
另外，如圖3所示的，由於工具基座13的貫通孔12A可防止雷射光L散射，故在該貫通孔12A的周圍不會形成照射點。因此，可控制與圖2的中心部位的4條光纖21連接的雷射發振器7’不振盪發出雷射光L。
在此，接受負壓供給的連接通路29的直線狀溝部12B，配置於相隣2列的雷射光L的中間，而且如圖4所示的，雷射光L的強度分布形成高斯模式。因此，無論是否在工具基座13形成溝部12B，均可將溝部12B所造成的雷射光L的熱損失抑制在最小限度內。
然後，當雷射光L穿透過由二層透光構件11、12所構成的工具基座13並照射到接合工具14時，該接合工具14會被雷射光L加熱，半導體晶片3以及在其底面的複數位置上所配置的凸塊35(圖1)也受到加熱。在半導 體晶片3的背面預先塗布了助焊劑。另外，亦可在基板2的與半導體晶片3接合的位置也塗布助焊劑。
當上述凸塊35熔融時，附著於其上的助焊劑等物質的一部分會蒸發，飄散在半導體晶片3的周邊，然後會因為負壓而被吸入上述晶片吸引通路23內。像這樣，被吸入晶片吸引通路23內的助焊劑等物質也會附著於構成晶片吸引通路23的連接通路29(貫通孔12A與溝部12B以及將其封閉的透光構件11的底面)。然而，本實施例的雷射光L如圖4所示的形成高斯模式，而且溝部12B形成於相隣的雷射光L的照射點之間。因此，即使助焊劑等物質附著並固化於溝部12B內或其隣接上層的透光構件11的底面，亦可防止雷射光L的熱效率降低。藉此，便可利用接合工具14有效率地將半導體晶片3加熱並確實地將該半導體晶片3接合於基板2上。
像這樣接合作業結束之後，根據控制裝置的指令停止從負壓源32對晶片吸引通路23供給負壓，解除接合工具14對半導體晶片3的保持狀態。之後，利用升降加壓機構6使接合頭5上升，進入到下一輪的接合步驟中。
如以上所述的，在本實施例中，即使助焊劑等物質蒸發而附著並固化於晶片吸引通路23內，成為晶片吸引通路23的主要部位的連接通路29的設置範圍較小，且位於雷射光L的照射點之間。因此，比起以往而言，更可防止所蒸發的助焊劑等物質使雷射光L的加熱效率降低。另外，由於被助焊劑等物質所污染的區域有限(連接通路29)，故可提高接合裝置1的維護保養容易度。
另外，在本實施例中，由於雷射光L的照射點排列成矩陣狀，故上述連接通路29的配置變得比較容易。
另外，由於雷射光L的照射點的光束分布形成高斯模式，故上述連接通路29會被相對強度較低的雷射光L照射到，因此可抑制雷射光L的透光率降低並防止雷射光L的加熱效率降低。
再者，在本實施例中，由於工具基座13係由二層透光構件11、12堆疊所構成，故可使上述連接通路29比較容易製作。而且，藉由將兩透光構件11、12分離，可使附著了助焊劑等物質的連接通路29內部比較容易清 潔。因此，連接通路29比較容易維護保養。
另外，在上述實施例中，係利用雷射光L將接合工具14加熱，並利用該受到加熱的接合工具14將半導體晶片3加熱，惟亦可省略接合工具14，將半導體晶片3吸附保持於工具基座13，並利用雷射光L將該半導體晶片3直接加熱。
此時，只要停止從負壓源27對工具吸引通路26供給負壓，並從負壓源32對晶片吸引通路23供給負壓，直接將半導體晶片3吸附保持於工具基座13的底面(透光構件12的底面)即可。亦即，此時，工具基座13被當作接合工具14使用。
上述實施例的接合裝置1，係利用穿透過工具基座13的雷射光L隔著接合工具14將半導體晶片3加熱，或是直接對工具基座13所吸附保持的半導體晶片3加熱，惟亦可分別構成專用的機構，自不待言。
另外，在上述實施例中，係在下層的透光構件12的頂面形成溝部12B，惟亦可在上層的透光構件11的底面，於對應上述溝部12B的部位，形成直線狀的溝部。
另外，在上述實施例中，工具基座13係由上層的透光構件11與下層的透光構件12堆疊所構成，惟亦可利用單一的透光構件構成工具基座13，並在該單一的透光構件的內部形成相當於上述貫通孔12A與溝部12B的內部空間的L字狀的連接通路29。
再者，亦可從單一的雷射振盪器7振盪發出雷射光L，並基於該雷射光L利用分束器等構件分出複數道雷射光。
另外，本案發明，除了上述助焊劑之外，對於其他具有會因為接合時之加熱而蒸發的性質的接合材料、接合輔助材料(例如樹脂製接著劑等)所造成的污染也能發揮功效，自不待言。
1‧‧‧接合裝置
2‧‧‧基板
3‧‧‧半導體晶片
4‧‧‧基板台
5‧‧‧接合頭
5A、22‧‧‧殼體
5B、12A、13A、14A‧‧‧貫通孔
6‧‧‧升降加壓機構
7、7’‧‧‧雷射振盪器
8‧‧‧導光機構
11、12‧‧‧透光構件
12B、25A‧‧‧溝部
13‧‧‧工具基座
14‧‧‧接合工具
15‧‧‧聚光透鏡
16‧‧‧反射鏡子
21‧‧‧光纖
23‧‧‧晶片吸引通路
24‧‧‧安裝構件
25‧‧‧阻擋部
25B‧‧‧連通孔
26‧‧‧工具吸引通路
27、32‧‧‧負壓源
28、31‧‧‧導管
29‧‧‧連接通路
35‧‧‧凸塊
L‧‧‧雷射光
II-II、III-III‧‧‧線段

Claims (4)

  1. 一種接合裝置，包含：基板台，其可載置基板；雷射振盪器，其振盪發出雷射光；接合頭，其保持電子零件並將該電子零件接合於基板上；導光機構，其將該雷射振盪器所振盪發出的雷射光導入該接合頭；工具基座，其設置於該接合頭且可由雷射光穿透；以及電子零件的吸引通路，其設置於該工具基座；該接合裝置利用穿透過該工具基座的雷射光將電子零件加熱並接合於基板上；該接合裝置的特徵為：該導光機構，將具有各自相異之導光路徑的複數道雷射光導入該接合頭並使其穿透過該工具基座；該電子零件的吸引通路，具有與該各道雷射光的照射方向交叉的區間，並將該交叉之區間配置在該各道雷射光的導光路徑之間。
  2. 如申請專利範圍第1項之接合裝置，其中，該導光機構引導該各道雷射光，在該工具基座的端面形成排列成矩陣狀圖案的複數個照射點。
  3. 如申請專利範圍第1或2項之接合裝置，其中，由該導光機構導入接合頭的各道雷射光的光束分布形成高斯模式。
  4. 如申請專利範圍第1或2項之接合裝置，其中，該工具基座係由上層側的第1透光構件與下層側的第2透光構件堆疊所構成；該吸引通路係由形成於第2透光構件的軸方向孔，以及與該軸方向孔連通且形成於第1透光構件與第2透光構件的抵接面中的至少其中一方的溝部所構成。
TW102123003A 2012-06-29 2013-06-27 接合裝置 TWI582865B (zh)

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JP6217902B2 (ja) * 2013-05-31 2017-10-25 澁谷工業株式会社 ボンディング装置
KR20180137888A (ko) * 2017-06-20 2018-12-28 주식회사 프로텍 반도체 칩 본딩 장치 및 반도체 칩 본딩 방법
KR101975103B1 (ko) 2017-06-20 2019-05-03 주식회사 프로텍 플립칩 레이저 본딩 장치 및 플립칩 레이저 본딩 방법
KR102410948B1 (ko) 2017-09-29 2022-06-20 삼성전자주식회사 반도체 칩 접합용 지그, 이러한 지그를 포함하는 반도체 칩의 접합 장치 및 이 장치를 이용한 반도체 칩의 접합 방법
CN108747009A (zh) * 2018-06-21 2018-11-06 青岛海信宽带多媒体技术有限公司 一种激光器共晶焊接装置及使用方法
KR102248159B1 (ko) * 2019-08-14 2021-05-13 레이저쎌 주식회사 플립 칩 본딩장치의 가압 헤드 및 그를 포함하는 가압 어셈블리
KR102394825B1 (ko) 2020-04-23 2022-05-06 주식회사 프로텍 빅셀 소자를 이용한 플립칩 본딩 장치
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