TWI581827B - Gas handling device - Google Patents

Description

Gas treatment device

The present invention relates to a device for decomposing a gas containing a gas harmful to the human body, a global warming gas, an ozone depleting gas, or the like, particularly a gas discharged from a manufacturing process such as a semiconductor or a liquid crystal.

At present, various types of industrial processes for manufacturing and processing articles have been developed and implemented, and the types of gases (hereinafter referred to as "treatment gas") discharged from various industrial processes are widely divided. Therefore, various gas processing methods and gas processing apparatuses are used in accordance with the type of the processing target gas discharged from the industrial process.

For example, in the semiconductor manufacturing process, various gases such as methotane (SiH ₄ ), chlorine gas, and PFC (perfluorinated compound) are used. When the gas to be treated contains methotane, the thermal decomposition type, combustion type, and adsorption are used. When the treatment target gas contains chlorine gas, a treatment device such as a wet type or an adsorption type using a chemical liquid is used. Further, when the treatment target gas contains PFC, a catalytic type, a thermal reaction type, a thermal decomposition type, a combustion type, or a plasma type gas treatment device is used.

When the gas processing apparatus is prepared one by one corresponding to various processing target gases discharged from the industrial process, the management of the apparatus becomes complicated and the time and cost required for maintenance increase. As a result, the cost of the product is affected and the cost competitiveness of the product is reduced.

Then, since most of the processing target gas discharged from the industrial process can be thermally decomposed at a high temperature, if the thermal decomposition type gas processing apparatus shown in Patent Document 1 is used, that is, the atmospheric piezoelectric slurry is ejected in the reactor, toward the The atmospheric piezoelectric slurry is supplied to the apparatus to be subjected to decomposition treatment, and at least the processing target gas which can be thermally decomposed at a high temperature can be decomposed in one apparatus regardless of the type. In the present specification, "atmospheric piezoelectric slurry" means a plasma generated under atmospheric pressure, and is a generalized plasma containing thermoelectric plasma, microwave plasma, and flame.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-334294

As described above, a gas decomposition apparatus using a thermal decomposition type of atmospheric piezoelectric slurry has a very high versatility, but is, for example, a process such as epitaxy, diffusion, LPCVD (reduced pressure CVD), plasma CVD of a solar cell, and the like. There is a problem in application when the flammable gas such as hydrogen (the flow rate of nitrogen is several to several times with respect to the flow rate of nitrogen) is present at a very high concentration.

In other words, the gas to be treated which is a flammable gas such as a high-concentration hydrogen is mixed in a small amount as long as the combustion-supporting gas such as oxygen is mixed in a small amount, which is extremely dangerous. The thermal decomposition type gas processing apparatus using the atmospheric piezoelectric slurry is configured such that the combustion-promoting gas such as the gas to be treated and the combustion-promoting gas such as oxygen are mixed at a position closer to the reactor, and the combustion space is directed from the inside of the reactor. Supply processing gas There is a risk of so-called "backfire" in the upstream of the piping.

Therefore, the main problem to be solved by the present invention is to provide a gas treatment device capable of safely and surely applying various gas to be treated in a safe manner even when a combustible gas such as hydrogen flows in at a high concentration. .

The first invention of the present invention is a gas processing apparatus 10 in which a cylindrical reactor 12 is vertically erected on a water tank 18, and a treatment target gas F is supplied from an inlet port 28 located at an upper portion of the reactor 12, in the above reaction. After the thermal decomposition of the processing target gas F is performed inside the inside of the reactor 12, the exhaust gas G after the thermal decomposition treatment is discharged from the discharge port 12a provided at the lower portion of the reactor 12, and the reactor 12 is caused to The lower end surface is opened, and the oxidizing gas A" sent through the water W in the water tank 18 is introduced through the lower end opening 12b.

According to the present invention, the exhaust gas G and the oxidizing property after the thermal decomposition treatment are disposed at a position B which is farthest from the thermal decomposition space in the reactor 12 toward the discharge port 12a and which is closest to the discharge port 12a and the water W of the water tank 18. Since the gas A (the combustion-supporting gas) is in contact with each other, the combustible gas such as hydrogen in the exhaust gas F to be treated can be burned safely without causing backfire, and can be converted into a harmless non-combustible gas, for example, a combustible gas. The hydrogen is converted into water (water vapor) while the concentration of the combustible gas is below the explosive limit concentration.

Further, since it is configured such that the oxidizing gas A passes through the water tank 18 The water W is introduced into the reactor 12, that is, the structure in which the front end of the piping for supplying the oxidizing gas A is disposed in the water W in the water tank 18, for example, in the reactor 12, even in the gas F of the treatment target gas F, When TEOS, WF6, etc. are oxidized to produce a solid matter, there is no fear that the solid matter will block the supply path of the oxidizing gas A.

Further, in the gas treatment device 10 of the present invention, it is preferable that "the water supply means 16 for covering the inner surface of the reactor 12 with water W" is provided. By providing the water supply means 16 in this manner, a "wet wall" can be formed on substantially the entire inner surface of the reactor 12. Therefore, when there is a solid component in the reactor 12 accompanying the treatment target gas F, and a solid component is accompanied when the treatment target gas F is thermally decomposed in the reactor 12, the solid components are attached to the reaction. The inner surface of the vessel 12 is previously dissolved in the water W in contact with the water W covering the inner surface of the reactor 12, or flows out of the reactor 12 together with the water W. Therefore, it is possible to prevent the solid components entering the reactor 12 or accompanying the inside of the reactor 12 from coming into contact with the inner surface of the reactor 12 to cause adhesion and deposition. Further, by forming the "wet wall", it is possible to prevent the inner surface of the reactor 12 from being directly exposed to a high temperature, and the deterioration of the inner surface can be alleviated.

Further, in the present invention, it is preferable to "provide that the exhaust gas G after the thermal decomposition treatment discharged from the reactor 12 is subjected to a water-washing stage after-stage wet scrubber 22". In the gas treatment device 10 of the present invention, since the combustion of the combustible gas and the oxidizing gas A is performed in the vicinity of the discharge port 12a of the reactor 12, the temperature of the exhaust gas immediately after leaving the reactor 12 rises. By providing the after-stage wet scrubber 22 in the rear stage of the reactor 12, the exhaust gas G after the thermal decomposition treatment which is discharged from the reactor 12 at a high temperature can be immediately cooled to the normal temperature. The water-soluble component and the solid component generated when the treatment target gas F is thermally decomposed can be washed and removed from the exhaust gas G, and the exhaust gas G after the thermal decomposition can be discharged to the atmosphere in a cleaner state.

In addition, the gas processing apparatus 10 of the present invention preferably has a front end that can change the diameter of the discharge port 12a in accordance with the flow rate of the exhaust gas G, and supplies the oxidizing gas supply pipe 36 to the front end of the oxidizing gas supply pipe 36. In the water W in the water tank 18, a bubbler 44 is attached, and the bubbler 44 can be changed up and down in the water W in accordance with the flow rate of the oxidizing gas A. In this way, the detoxification efficiency in the reactor 12 can be further improved.

According to the present invention, it is possible to provide a gas processing apparatus capable of safely and surely applying various kinds of processing target gases contained therein even when a combustible gas such as hydrogen flows in at a high concentration.

The invention will now be described in accordance with the illustrated embodiments. Fig. 1 is a view showing the outline of the gas processing apparatus 10 of the present embodiment. As shown in the figure, the gas treatment device 10 of the present embodiment is roughly composed of a reactor 12, a plasma generating device 14, a water supply means 16, a water tank 18, an oxidizing gas supply means 20, a rear stage wet type cleaner 22, and the like. Composition. Further, in the present embodiment, the case where the plasma generating device 14 is used as the heat source is exemplified, and the heat source used in the gas processing device 10 is not limited to this device, and may be not shown. Flame burners, electric heaters, etc.

The reactor 12 is a device that surrounds the atmospheric piezoelectric slurry P and the processing target gas F generated by the plasma generating device 14 and thermally decomposes the processing target gas F therein, specifically, a cylindrical outer cylinder 12x. And a double tube formed by the cylindrical inner tube 12y, the outer tube 12x is closed at both end faces and is erected on the water tank 18; the inner tube 12y is received inside the outer tube 12x, and has a diameter larger than the outer tube The 12x is small and the both end faces are open, and the upper end portion thereof is disposed to form a gap between the end surface of the outer cylinder 12x and the lower end portion thereof extends through the lower end surface of the outer cylinder 12x and extends into the water tank 18.

A space formed between the inner circumferential surface of the outer tube 12x and the outer circumferential surface of the inner cylinder 12y of the reactor 12 is formed with a water storage portion 24 which will be along the reactor 12 (more specifically, inside) The water W flowing through the inner surface of the cylinder 12y) is temporarily stored.

Further, on the upper end surface of the outer cylinder 12x, a plasma injection hole 26 is provided at the center thereof, and one or a plurality of (two in the embodiment shown in Fig. 1) inlets 28 are provided around the plasma injection hole 26. The inlet port 28 is connected to the inlet duct 30 for introducing the process target gas F discharged from various industrial processes into the reactor 12.

Further, in the inlet duct 30, a wet scrubber (not shown) before the water spray toward the processing target gas F can be provided. By providing such a scrubber, when the treatment target gas F itself contains many solid components and water-soluble components, the solid component can be obtained from the treatment target gas F before the treatment target gas F is supplied to the reactor 12. The water-soluble component is washed with water to reduce the solid component and water-soluble component to be treated in the reactor 12. the amount.

Further, a lower portion of the inner cylinder 12y extending into the water tank 18, that is, a lower portion of the reactor 12 (in the case of the present embodiment, a side surface thereof) is provided with a treatment target gas F after thermal decomposition treatment (i.e., The exhaust gas G) is a discharge port 12a that is discharged from the inner side of the inner cylinder 12b toward the outer side. Further, as described above, the lower end surface of the inner cylinder 12y is open and the lower end opening 12b is provided, and the water W of the water tank 18 is filled into the vicinity of the discharge port 12a through the lower end opening 12b.

Here, as shown in FIG. 2, the discharge port 12a is preferably provided at a position where a part of the lower side thereof is in contact with the water W. In this way, the exhaust gas G and the oxidizing gas A described later can be more safely reacted in the vicinity of the water surface.

Further, although not shown, the discharge port 12a is preferably changed in accordance with the flow rate of the exhaust gas G by a shutter mechanism or the like, for example. As described above, even if the flow rate of the exhaust gas G is small, the exhaust gas G can be efficiently contacted and reacted with the oxidizing gas A described later.

The plasma generating device 14 is an atmospheric piezoelectric slurry P for generating a high temperature, and includes a plasma torch 14a having an electrode therein, a DC power source (not shown) for applying a potential to the electrodes of the plasma torch 14a, and a pair. The electric torch 14a supplies an operating gas supply device (not shown) or the like for the operating gas. Among them, the plasma torch 14a is attached to the central portion of the outer surface of the upper end of the outer cylinder 12x, whereby the atmospheric piezoelectric slurry P can be ejected from the plasma injection hole 26 toward the inside of the inner cylinder 12y of the reactor 12.

The water supply means 16 is for allowing the water W to flow along the inner surface of the inner cylinder 12y. In the present embodiment, the water storage portion 24, the water supply pipe 32 for connecting the water tank 18 and the water storage portion 24, and the pump 34 for supplying the water W stored in the water tank 18 to the water storage portion 24 are included. In other words, the water W of the water tank 18 is supplied to the water storage unit 24, and the water W is overflowed from the upper end of the inner cylinder 12y, and the water supply means 16 for allowing the water W to flow along the inner surface of the inner cylinder 12y.

Further, in the water supply pipe 32, the discharge side portion of the pump 34 is branched to form a manifold 32a, and the water is supplied to the nozzle 32b provided on the inner space wall surface of the water tank 18 through the manifold 32a, thereby facing the water tank 18. The inner space and the inner wall surface allow the spray water to be ejected.

The water tank 18 is for storing the water W circulating in the water supply means 16 and the fresh water NW used in the latter stage wet cleaning device 22, and after the internal space is thermally decomposed by the reactor 12 The sealed container body through which the exhaust gas G flows has an inner surface made of a material resistant to heat and corrosion. The water tank 18 is provided with a cooler 18a, and the cooling water C is circulated inside the cooler 18a to maintain the water W in the water tank 18 at a predetermined temperature (in the case of the present embodiment, 30 ° C). In addition, the water level in the water tank 18 is controlled to be no higher than the reference water level position.

The oxidizing gas supply means 20 is an oxidizing gas A for supplying a combustible gas capable of assisting hydrogen or the like (that is, a combustion-supporting gas) to the inside of the reactor 12, and roughly includes an oxidizing gas supply pipe 36, A blower 38 that transports the oxidizing gas A toward the tip end of the oxidizing gas supply pipe 36, a flow meter 40 that measures the flow rate of the oxidizing gas A flowing through the oxidizing gas supply pipe 36, and a measurement value according to the flow meter 40 The valve 42 that regulates the flow rate of the oxidizing gas A flowing through the oxidizing gas supply pipe 36 is adjusted. Here, the "oxidizing gas A" of the present invention refers to a gas which ignites or assists combustion of other substances, and does not only refer to an oxygen monomer, as long as it is an oxygen-containing gas, and the oxygen concentration thereof is not particularly limited, and conceptually Contains the general atmosphere.

Further, the tip end of the oxidizing gas supply pipe 36 is disposed at a position directly below the lower end opening 12b of the reactor 12 in the water W in the water tank 18, and a bubbler 44 is attached to the tip end. Therefore, the oxidizing gas A sent through the oxidizing gas supply pipe 36 is formed into fine bubbles by the bubbler 44 attached to the tip end of the pipe 36, and then supplied to the lower portion of the reactor 12 from the lower end opening 12b. The oxidizing gas A is supplied into the reactor 12 via the bubbler 44 in this manner, and the oxidizing gas A and the exhaust gas G after the thermal decomposition treatment can be efficiently contacted.

Here, as shown in FIG. 2, the bubbler 44 is preferably disposed in the inner cylinder 12y of the reactor 12. Thus, the oxidizing gas A supplied through the bubbler 44 can be utilized for reaction with the exhaust gas G without any exhaustion.

Further, it is preferable that the bubbler 44 be changed up and down in the arrangement position of the water W in accordance with the flow rate of the oxidizing gas A. Thus, for example, when the supply amount of the oxidizing gas A is large and a large amount of bubbles are generated in the bubbler 44, the bubbles are caused to cause the water droplets in the inner cylinder 12y to affect the atmospheric piezoelectric slurry P, and the bubbler can be lowered. The position of 44 is removed from the water surface, thereby solving the above problem (the influence of water droplets on the atmospheric piezoelectric slurry P). As a result, the gas to be treated can be efficiently performed without harm. Chemical.

The latter-stage wet scrubber 22 is a device that removes water-soluble components and solid components generated when the treatment target gas F is thermally decomposed from the exhaust gas G, and includes a straight tubular cleaner body 22a, The two nozzles 22b and 22c disposed in the washer body 22a and the spray trap separator 22d formed of a wire mesh or the like.

The rear stage wet scrubber 22 is vertically erected on the water tank 18 in the same manner as the reactor 12, and returns the fresh water NW discharged from the two nozzles 22b and 22c to the water tank 18.

Moreover, the top outlet of the rear stage wet scrubber 22 is connected to the suction side of the exhaust fan 46, and the exhaust fan 46 is for releasing the processed exhaust gas G to the atmosphere, and the exhaust fan 46 is An exhaust duct 48 is connected to the discharge side.

Further, in the gas processing apparatus 10 of the present embodiment, the inlet duct 30 connected to the inlet port 28 of the reactor 12 and the suction side of the exhaust fan 46 are connected by the normally closed bypass pipe 50, and further, in the row. The suction side of the air fan 46 is connected to the air introduction pipe 54 through a vent valve 52, and the air introduction pipe 54 is an exhaust gas G flow path for introducing the atmosphere into the thermal decomposition process discharged from the reactor 12.

In this case, when any abnormality occurs in the reactor 12, the bypass valve 56 that normally closes the bypass pipe 50 is completely opened, and the processing target gas F is caused to flow through the bypass pipe 50, and the vent valve 52 is fully opened. A large amount of air is introduced into the exhaust gas G flow path, whereby the target gas F can be diluted to a safe concentration and discharged urgently.

When the gas to be treated F is decomposed by the gas processing apparatus 10 shown in Fig. 1, first, although not shown, the operating gas supply device is operated, and the flow rate is controlled by the mass flow control means to transmit the operating gas to the electric power. Slurry 14a.

Next, the pump 34 is actuated to supply the water W stored in the water tank 18 to the water storage portion 24 of the reactor 12 and the nozzle 32b provided in the internal space of the water tank 18. Thereby, the water W filled in the water storage portion 24 overflows from the upper end of the inner cylinder 12y to the inner surface of the inner cylinder 12y, and the overflowed water W flows along the inner surface of the inner cylinder 12y toward the lower side in the drawing. On the inner surface of the inner cylinder 12y, a so-called "wet wall" is formed substantially entirely. The water W forming the "wet wall" is returned to the water tank 18 except for the component which is vaporized by the heat of the atmospheric piezoelectric slurry P, and is again supplied to the reactor 12 or the like by the pump 34. In addition, the supply of new water NW to the nozzles 22b, 22c of the rear wet scrubber 22 is also started.

After the "wet wall" is formed on the inner surface of the inner cylinder 12y, a DC power source (not shown) is actuated to apply a voltage between the electrodes of the plasma torch 14a, and the atmospheric piezoelectric slurry P is ejected from the plasma injection hole 26.

Next, when the temperature in the reactor 12 reaches a predetermined set temperature at which the treatment target gas F can be thermally decomposed, the exhaust fan 46 is actuated. In this way, the entire inside of the gas processing apparatus 10 is subjected to a negative pressure, and the processing target gas F supplied from the source of the processing target gas F via the exhaust duct (not shown) is sequentially introduced into the reaction via the inlet duct 30 and the inlet port 28 After the inside of the device 12, it is supplied toward the atmospheric piezoelectric slurry P, and is thermally decomposed by the heat of the atmospheric piezoelectric slurry P.

Here, when the type of the processing target gas F is, for example, a ruthenium compound containing carbene or the like, a solid component such as cerium oxide (SiO ₂ ) is generated when the treatment target gas F is thermally decomposed. The solid component has a property of easily adhering to the inner cylinder surface of the reactor. However, in the gas treatment device 10 of the present embodiment, the water W flows through the inner surface of the inner cylinder 12y to the inside of the inner cylinder 12y. The surface of the inner surface of the inner cylinder 12y is in contact with the water W flowing along the inner surface of the inner cylinder 12y, and is dissolved in the water W, or The water W flows together from the lower end opening 12b to the outside of the reactor 12.

Next, the exhaust gas G subjected to the thermal decomposition treatment by the heat of the atmospheric piezoelectric slurry P is at the position B closest to the discharge port 12a of the lower portion of the reactor 12 and the water W of the water tank 18, and the water W passing through the water tank 18. The oxidizing gas A supplied to the reactor 12 is kept in contact at a high temperature. Thereby, the combustible gas such as hydrogen is burned and converted into a harmless incombustible gas such as water (water vapor).

The exhaust gas G discharged from the discharge port 12a to the inside of the water tank 18 is introduced into the upper surface of the water tank 18 through the space formed between the upper surface of the water tank 18 and the water surface. In the latter stage of the wet scrubber 22, the exhaust gas G after the thermal decomposition treatment which is subjected to higher temperature by the combustion of the combustible gas and the oxidizing gas A can be immediately cooled to about room temperature, and the treatment target gas F can be further processed. The water-soluble component and the solid component generated during thermal decomposition are washed away from the exhaust gas G, and the thermally decomposed exhaust gas G is discharged to the atmosphere in a cleaner state.

Moreover, the exhaust gas G after passing through the rear stage wet scrubber 22, as the case may be In front of the exhaust fan 46, it is mixed with the air introduced from the air introduction pipe 54 through the vent valve 52, and then transmitted to the exhaust duct 48 through the exhaust fan 46 to be released to the outside of the system.

Here, the result of actually performing the detoxification treatment of the processing target gas F by using the gas processing apparatus 10 of the present embodiment is as follows. That is, the plasma is always discharged at a DC voltage of about 100 V and a DC current of 60 A. At this time, the flow rate of nitrogen as the operating gas is about 25 L (liter) / min.

Under these conditions, the processing target gas F is introduced into the two inlet ports 28, and the processing target gas F is composed of ₂ L/min. of SiH ₄ and 100 L/min. of H ₂ for nitrogen gas 100 L/min. The air as the oxidizing gas A was supplied into the reactor 12 at a flow rate of 500 L/min. by the oxidizing gas supply means 20, and subjected to thermal decomposition treatment. As a result, the SiH ₄ concentration measured at the outlet of the exhaust fan 46 was less than the detection limit of 1 ppm, and the H ₂ concentration did not reach the detection limit of 100 ppm. Further, abnormal combustion such as backfire does not occur, and the harmless treatment of the treatment target gas F can be performed safely.

According to the gas treatment device 10 of the present embodiment, at the position B which is farthest from the thermal decomposition space in the reactor 12 toward the discharge port 12a and which is closest to the discharge port 12a and the water W of the water tank 18, the thermal decomposition treatment is performed. Since the exhaust gas G is in contact with the oxidizing gas A (combustion gas), the combustible gas such as hydrogen in the exhaust gas F to be treated can be burned safely without causing backfire, and can be converted into a harmless incombustible gas. At the same time, the concentration of the flammable gas is below the explosive limit concentration.

Further, since it is configured such that the oxidizing gas A passes through the water tank 18 The water W is introduced into the reactor 12, that is, the structure in which the front end of the pipe for supplying the oxidizing gas A is disposed in the water W in the water tank 18, for example, in the reactor 12, even in the gas to be treated F, When TEOS, WF6, etc. are oxidized to produce a solid matter, there is no fear that the solid matter will block the supply path of the oxidizing gas A. Therefore, the burden of maintenance can be reduced, and the gas processing apparatus 10 can be continuously operated for a long time.

Further, in the above embodiment, the case of using the thermoelectric plasma as the atmospheric piezoelectric slurry P is exemplified, but the microwave piezoelectric slurry and the flame can also be used as the atmospheric piezoelectric slurry P.

Further, in the above-described embodiment, the case where the lower end portion of the reactor 12 is immersed in the water W of the water tank 18 is different from the lower end opening 12b, and the discharge port 12a is provided on the lower side surface of the reactor 12, but it may be The lower end portion of the reactor 12 is placed on the water surface, and the lower end opening 12b is the discharge port 12a. However, in this case, although the structure of the reactor 12 can be made simple, the contact probability of the flammable gas and the oxidizing gas A is somewhat lowered.

Further, the gas processing apparatus of the present invention is not limited to the processing target gas F from the semiconductor manufacturing process, and can be applied to decomposition processing of the processing target gas F from the LCD manufacturing process and the MEMS manufacturing process, and the chlorofluorocarbon for the refrigerant.

10‧‧‧ gas treatment unit

12‧‧‧Reactor

12a‧‧‧Export

12b‧‧‧Bottom opening

14‧‧‧Plastic generating device

16‧‧‧Water supply means

18‧‧‧Sink

20‧‧‧Oxidizing gas supply means

22‧‧‧After wet scrubber

28‧‧‧Entry埠

30‧‧‧Inlet catheter

46‧‧‧Exhaust fan

48‧‧‧Exhaust duct

50‧‧‧Bypass piping

52‧‧‧Ventilation valve

54‧‧‧Atmospheric introduction piping

56‧‧‧ Bypass valve

P‧‧‧Atmospheric piezoelectric slurry

F‧‧‧Processing gas

G‧‧‧Exhaust

A‧‧‧Oxidizing gas

Fig. 1 is a view showing the schematic configuration of a gas treatment device according to an embodiment of the present invention.

Figure 2 shows the lower peripheral structure of the inner cylinder of the reactor disposed in the water tank. Create an illustration.

10‧‧‧ gas treatment unit

12‧‧‧Reactor

12a‧‧‧Export

12b‧‧‧Bottom opening

12x‧‧‧Outer tube

12y‧‧‧ inner tube

14‧‧‧Plastic generating device

14a‧‧‧Electric torch

16‧‧‧Water supply means

18‧‧‧Sink

18a‧‧‧cooler

20‧‧‧Oxidizing gas supply means

22‧‧‧After wet scrubber

22a‧‧‧Washer body

22b, 22c‧‧‧ nozzle

22d‧‧‧Spray capture separator

24‧‧‧Water Storage Department

26‧‧‧Plastic injection hole

28‧‧‧Entry埠

30‧‧‧Inlet catheter

32‧‧‧Water Supply Piping

32a‧‧‧Management

32b‧‧‧Nozzles

34‧‧‧ pump

36‧‧‧Oxidizing gas supply piping

38‧‧‧Blowing machine

40‧‧‧ Flowmeter

42‧‧‧Valve

44‧‧‧ Bubbler

46‧‧‧Exhaust fan

48‧‧‧Exhaust duct

50‧‧‧Bypass piping

52‧‧‧Ventilation valve

54‧‧‧Atmospheric introduction piping

56‧‧‧ Bypass valve

A‧‧‧Oxidizing gas

C‧‧‧Cooling water

F‧‧‧Processing gas

G‧‧‧Exhaust

P‧‧‧Atmospheric piezoelectric slurry

W‧‧‧Water

NW‧‧New Water

Claims (4)

A gas processing apparatus in which a cylindrical reactor is vertically placed on a water tank, and a gas to be treated is supplied from an inlet port located at an upper portion of the reactor, and the gas to be treated is thermally decomposed inside the reactor, and then placed in the reactor. The discharge port of the lower portion of the reactor discharges the exhaust gas after the thermal decomposition treatment. The gas treatment device is characterized in that the lower end surface of the reactor is opened, and the lower end opening is introduced through the water in the water tank. Oxidizing gas. The gas treatment device according to claim 1, wherein the reactor is provided with a water supply means for covering the inner surface with water. The gas treatment device according to claim 1 or 2, wherein the exhaust gas after the thermal decomposition treatment of the reactor is subjected to a water-washing stage after-stage wet scrubber. The gas processing apparatus according to the first or second aspect of the present invention, wherein the front end of the discharge port is changed in accordance with a flow rate of the exhaust gas, and a front end of the oxidizing gas supply pipe for supplying the oxidizing gas is disposed. A bubbler is attached to the water in the water tank, and the position of the bubbler in the water can be changed up and down in accordance with the flow rate of the oxidizing gas.