TWI579983B - Semiconductor package having id code of molding map hidden in leadframe - Google Patents

Semiconductor package having id code of molding map hidden in leadframe Download PDF

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Publication number
TWI579983B
TWI579983B TW105103724A TW105103724A TWI579983B TW I579983 B TWI579983 B TW I579983B TW 105103724 A TW105103724 A TW 105103724A TW 105103724 A TW105103724 A TW 105103724A TW I579983 B TWI579983 B TW I579983B
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semiconductor package
die
code
lead frame
package structure
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TW105103724A
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Chinese (zh)
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TW201729358A (en
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白勝元
徐宏欣
曾惠霞
彭鈺朝
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力成科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

導線架內隱藏模封地圖編碼之半導體封裝構造 Semiconductor package structure with hidden patterned map code in lead frame

本發明係有關於半導體晶片封裝領域,特別係有關於一種導線架內隱藏模封地圖編碼之半導體封裝構造。 The present invention relates to the field of semiconductor chip packaging, and more particularly to a semiconductor package structure for a hidden-mold map code in a lead frame.

在模封陣列封裝製程(MAP process,Mold Array Packaging process)中,在一模封陣列區上形成一大面積之模封膠體,以密封複數個陣列排列之封裝單元,經鋸切單離之後可得到複數個半導體封裝構造。應用於模封陣列封裝製程之晶片載板通常係為基板條或是無外接腳式導線架。已知使用線路基板之半導體封裝構造可輕易地在基板表面上直接製作出辨識碼,以作為生產歷程的追蹤,這是因為基板之核心層上能夠輕易地作出複雜的線路佈局與有效的顏色辨識。現行使用無外接腳式導線架之半導體封裝構造特別是鋸切式四方扁平無接腳式(saw QFN)封裝構造受到全金屬導線架之設計和封裝製程能力的限制,無法如同線路基板這般在導線架表面作出能直接辨識的辨識碼,當封裝製作過程中一旦發現產品異常,在最終測試(FT)時便無法有效追蹤發生問題的封裝產品在模封陣列區的相對位置,進而無法區分出良品與不良品,亦無法進行重點式失誤診斷,以改善封裝製程良率。 In the Mold Array Packaging process (MAP), a large area of the molding encapsulant is formed on a patterned array region to seal a plurality of package units arranged in an array, after being sawed and separated A plurality of semiconductor package structures are obtained. The wafer carrier used in the packaged array packaging process is typically a substrate strip or an external legless leadframe. It is known that a semiconductor package structure using a circuit substrate can easily produce an identification code directly on the surface of the substrate as a tracking of the production process because the complicated circuit layout and effective color recognition can be easily performed on the core layer of the substrate. . The current semiconductor package structure without external pin-type lead frame, especially the saw-type quad flat no-saw (saw QFN) package structure is limited by the design and packaging process capability of the all-metal lead frame, and cannot be like the circuit substrate. The identification surface of the lead frame is directly recognizable. When the product is found to be abnormal during the manufacturing process, the relative position of the packaged product in the molded array area cannot be effectively tracked in the final test (FT), and thus the difference cannot be distinguished. Good and bad products can not be diagnosed with key errors to improve the packaging process yield.

為了解決上述之問題,本發明之主要目的係在於提供一種導線架內隱藏模封地圖編碼之半導體封裝構造,以有效追蹤發生問題的封裝產品在模封陣列區的相對位置,進而區分出良品與不良品。 In order to solve the above problems, the main object of the present invention is to provide a semiconductor package structure with a hidden-mold map code in a lead frame, so as to effectively track the relative position of the packaged product in the molded array area, thereby distinguishing between good products and Defective product.

本發明的目的及解決其技術問題是採用以下技術方案來實現的。本發明揭示一種導線架內隱藏模封地圖編碼之半導體封裝構造,包含一導線架之一晶片承座與複數個引腳、一晶片以及一模封膠體。該晶片承座之上表面係具有一黏晶區以及一編碼區,該編碼區係圍繞該黏晶區。該晶片係設置於該黏晶區上並電性連接至該些引腳。該模封膠體係密封該晶片並結合該晶片承座與該些引腳。其中,該編碼區係具有複數個辨識點與一基準點,該基準點係定義該些辨識點之次序,一辨識碼孔配置係包含一個或一個以上的凹孔,其係選擇性形成於該些辨識點,以組成一單位辨識碼,並由該單位辨識碼轉換成一地圖編碼,藉以確定該晶片承座在該導線架中之模封陣列地址。 The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. The invention discloses a semiconductor package structure with a hidden-mold map code in a lead frame, comprising a wafer holder of a lead frame and a plurality of pins, a wafer and a mold sealing body. The upper surface of the wafer holder has a die-bonding region and a coding region surrounding the die-bonding region. The chip is disposed on the die bond region and electrically connected to the pins. The mold encapsulation system seals the wafer and bonds the wafer holder to the pins. Wherein, the coding region has a plurality of identification points and a reference point, wherein the reference point defines an order of the identification points, and an identification code hole arrangement comprises one or more concave holes, which are selectively formed on the The identification points are combined to form a unit identification code, and the unit identification code is converted into a map code to determine the address of the package array of the wafer holder in the lead frame.

本發明的目的及解決其技術問題還可採用以下技術措施進一步實現。 The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.

在前述半導體封裝構造中,該晶片承座在該編碼區之外係可形成有一電鍍層,以使得該編碼區介於該黏晶區與該電鍍層之間,以利於辨識。 In the foregoing semiconductor package structure, the wafer holder may be formed with a plating layer outside the coding region such that the coding region is interposed between the die bond region and the plating layer to facilitate identification.

在前述半導體封裝構造中,該模封膠體係可填入該 凹孔,使得有凹孔的辨識點為深色表現。 In the foregoing semiconductor package structure, the mold encapsulation system can be filled in the The recessed hole allows the identification point of the recessed hole to be dark.

在前述半導體封裝構造中,該基準點係可為該電鍍層之一弧凸邊,故具有容易成形與製作之功效,該基準點係亦可為如十字形或L形之非圓形孔或非圓形圖案。 In the foregoing semiconductor package structure, the reference point can be an arc-arc edge of the plating layer, so that the reference point can be easily formed and fabricated, and the reference point can also be a non-circular hole such as a cross or an L shape or Non-circular pattern.

在前述半導體封裝構造中,該黏晶區係可為凹陷,該晶片係可略為沉置於該黏晶區中,以防止黏晶材料不當地污染到該些辨識點。 In the foregoing semiconductor package structure, the die bond region may be a recess, and the wafer system may be slightly sunk in the die bond region to prevent the crystal grain material from being improperly contaminated to the identification points.

在前述半導體封裝構造中,該黏晶區之凹陷深度係可不貫穿該晶片承座,以防止黏晶材料的模封外露。 In the foregoing semiconductor package structure, the recessed depth of the die-bonding region may not penetrate the wafer holder to prevent the die-bonding of the die-bonding material from being exposed.

在前述半導體封裝構造中,係可另包含複數個銲線,係可電性連接該晶片之複數個銲墊至該些引腳,該模封膠體係可更密封該些銲線。 In the foregoing semiconductor package structure, a plurality of bonding wires may be further included, and a plurality of pads of the wafer may be electrically connected to the pins, and the molding compound system may further seal the bonding wires.

在前述半導體封裝構造中,該些辨識點係可等距排列在該晶片承座之四周圍。 In the foregoing semiconductor package construction, the identification points may be equally spaced around the wafer holder.

在前述半導體封裝構造中,該晶片承座之一第一下表面與該些引腳之複數個第二下表面係可顯露於該模封膠體之底部,以成為無外接腳導線架之封裝型態,例如四方扁平無接腳式(QFN)封裝。 In the foregoing semiconductor package structure, a first lower surface of the wafer holder and a plurality of second lower surface portions of the pins may be exposed at the bottom of the mold sealing body to form a package type without an external lead lead frame. State, such as a quad flat no-pin (QFN) package.

在前述半導體封裝構造中,該凹孔係可不貫穿該晶片承座,以防止該晶片承座之該第一下表面被該模封膠體溢膠污染。 In the foregoing semiconductor package structure, the recessed holes may not penetrate the wafer holder to prevent the first lower surface of the wafer holder from being contaminated by the molding gel.

藉由上述的技術手段,本發明可以達成在導線架之 晶片承座的有限空間內組成一辨識碼孔配置,以半蝕刻方式選擇性形成凹孔在辨識點位置而做出記號,進而以間接方式轉換成一對應至模封陣列區之地圖編碼,在增加此一結構設計之後,可正確追蹤區分良品和不良品,達到提升品質管控水準。 By the above technical means, the present invention can be achieved in a lead frame An identification code hole arrangement is formed in the limited space of the wafer holder, and the concave hole is selectively formed in a semi-etching manner to mark the position of the identification point, and then indirectly converted into a map code corresponding to the mask array area, which is increased After this structure is designed, it can correctly track the distinction between good and bad products, and achieve the quality control level.

100‧‧‧半導體封裝構造 100‧‧‧Semiconductor package construction

110、110A、110B、110C、110D‧‧‧晶片承座 110, 110A, 110B, 110C, 110D‧‧‧ wafer holder

111‧‧‧黏晶區 111‧‧‧Macked area

112‧‧‧編碼區 112‧‧‧ coding area

113‧‧‧辨識點 113‧‧‧ Identification points

114‧‧‧基準點 114‧‧‧ benchmark

115‧‧‧第一下表面 115‧‧‧First lower surface

116‧‧‧繫條 116‧‧‧ tied

120‧‧‧引腳 120‧‧‧ pin

121‧‧‧第二下表面 121‧‧‧Second lower surface

130‧‧‧晶片 130‧‧‧ wafer

131‧‧‧銲墊 131‧‧‧ solder pads

132‧‧‧主動面 132‧‧‧Active surface

133‧‧‧背面 133‧‧‧ back

140‧‧‧模封膠體 140‧‧‧Mold sealant

150‧‧‧凹孔 150‧‧‧ recessed hole

160‧‧‧電鍍層 160‧‧‧Electroplating

170‧‧‧黏晶材料 170‧‧‧Core material

180‧‧‧銲線 180‧‧‧welding line

第1圖:依據本發明之一具體實施例,一種導線架內隱藏模封地圖編碼之半導體封裝構造之截面示意圖。 1 is a cross-sectional view showing a semiconductor package structure in which a map code is hidden in a lead frame in accordance with an embodiment of the present invention.

第2圖:依據本發明之一具體實施例,該半導體封裝構造之晶片承座在其上表面之平面示意圖。 Figure 2 is a plan view of the wafer holder of the semiconductor package structure on its upper surface in accordance with an embodiment of the present invention.

第3圖:依據本發明之一具體實施例,沿第2圖3-3剖線該半導體封裝構造之晶片承座在其中一辨識點並為成孔處之局部截面示意圖。 Figure 3 is a partial cross-sectional view of the wafer holder of the semiconductor package structure taken along a line of the second embodiment of the present invention, taken along the line of Figure 2-3.

第4圖:依據本發明之一具體實施例,對應該半導體封裝構造之晶片承座之辨識點次序定義圖。 Figure 4 is a diagram showing the order of identification points of wafer holders corresponding to a semiconductor package construction in accordance with an embodiment of the present invention.

第5圖:依據本發明之一具體實施例,顯示模封陣列地址與地圖編碼對照關係之第一模封地圖之示意圖。 Figure 5 is a schematic diagram showing a first modular map in which a sealed array address and a map code are compared in accordance with an embodiment of the present invention.

第6A圖:依據本發明之一具體實施例,繪示在一半導體封裝構造之晶片承座上之一第一辨識點孔配置之示意圖。 FIG. 6A is a schematic diagram showing a first identification dot hole arrangement on a wafer holder of a semiconductor package structure according to an embodiment of the invention.

第6B圖:依據本發明之一具體實施例,繪示由該第一辨識點孔配置組成的第一單位辨識碼轉換成第一地圖編碼並對照至第一模封地圖之示意圖。 FIG. 6B is a schematic diagram showing the conversion of the first unit identification code composed of the first identification point hole configuration into the first map code and comparing to the first template map according to an embodiment of the present invention.

第7A圖:依據本發明之一具體實施例,繪示在另一半導體封裝構造之晶片承座上之一第二辨識點孔配置之示意圖。 FIG. 7A is a schematic diagram showing a second identification dot hole arrangement on a wafer holder of another semiconductor package structure according to an embodiment of the present invention.

第7B圖:依據本發明之一具體實施例,繪示由該第二辨識點孔配置組成的第二單位辨識碼轉換成第二地圖編碼並對照至第一模封地圖之示意圖。 FIG. 7B is a schematic diagram showing the conversion of the second unit identification code composed of the second identification point hole configuration into the second map code and comparing to the first template map according to an embodiment of the present invention.

第8圖:依據本發明之一具體實施例,顯示模封陣列地址與地圖編碼對照關係之第二模封地圖之示意圖。 Figure 8 is a schematic diagram showing a second modular map in which the relationship between the encapsulated array address and the map code is displayed in accordance with an embodiment of the present invention.

第9A圖:依據本發明之一具體實施例,繪示在另一半導體封裝構造之晶片承座上之一第三辨識點孔配置之示意圖。 FIG. 9A is a schematic diagram showing a third identification dot hole arrangement on a wafer holder of another semiconductor package structure according to an embodiment of the present invention.

第9B圖:依據本發明之一具體實施例,繪示由該第三辨識點孔配置組成的第三單位辨識碼轉換成第三地圖編碼之示意圖。 FIG. 9B is a schematic diagram showing conversion of a third unit identification code composed of the third identification point hole configuration into a third map code according to an embodiment of the present invention.

第10A圖:依據本發明之一具體實施例,繪示在另一半導體封裝構造之晶片承座上之一第四辨識點孔配置之示意圖。 FIG. 10A is a schematic diagram showing a fourth identification dot hole arrangement on a wafer holder of another semiconductor package structure according to an embodiment of the present invention.

第10B圖:依據本發明之一具體實施例,繪示由該第四辨識點孔配置組成的第四單位辨識碼轉換成第四地圖編碼之示意圖。 FIG. 10B is a schematic diagram showing conversion of a fourth unit identification code composed of the fourth identification point hole configuration into a fourth map code according to an embodiment of the present invention.

以下將配合所附圖示詳細說明本發明之實施例,然應注意的是,該些圖示均為簡化之示意圖,僅以示意方法來說明本發明之基本架構或實施方法,故僅顯示與本案有關之元件與組合關係,圖中所顯示之元件並非以實際實施之數目、形狀、尺寸做等比例繪製,某些尺寸比例與其他相關尺寸比例或已誇張或是簡化處理,以提供更清楚的描述。實際實施之數目、形狀及尺寸 比例為一種選置性之設計,詳細之元件佈局可能更為複雜。 The embodiments of the present invention will be described in detail below with reference to the accompanying drawings in which FIG. The components and combinations related to this case, the components shown in the figure are not drawn in proportion to the actual number, shape and size of the actual implementation. Some size ratios are proportional to other related sizes or have been exaggerated or simplified to provide clearer description of. Number, shape and size of actual implementation The ratio is an optional design, and the detailed component layout may be more complicated.

依據本發明之一具體實施例,一種導線架內隱藏模封地圖編碼之半導體封裝構造100舉例說明於第1圖之截面示意圖。第2圖係繪示該半導體封裝構造之晶片承座在其上表面之平面示意圖。第3圖係繪示沿第2圖3-3剖線該半導體封裝構造之晶片承座在其中一辨識點並為成孔處之局部截面示意圖。一種導線架內隱藏模封地圖編碼之半導體封裝構造100係包含一導線架之一晶片承座110與複數個引腳120、一晶片130以及一模封膠體140。其中,該晶片承座110與該些引腳120之材質係為金屬,例如銅合金或鐵合金,在封裝製程中該晶片承座110與該些引腳120可一體連接在該導線架中,在封裝構造中該晶片承座110與該些引腳120係為電性分離。通常該晶片承座110係利用複數個繫條(tie bar)一體連接至該導線架,用以在製程中承載該晶片130,在鋸切單離之後部份之繫條會殘留在封裝構造中。該半導體封裝構造100係具體可為一鋸切式四方扁平無接腳式(saw QFN)封裝構造,即該些引腳120係不具有橫向延伸到該模封膠體140外部且彎折之外接腳部,而是利用該些引腳120之下表面作為銲料接合之表面接合區域。 In accordance with an embodiment of the present invention, a semiconductor package structure 100 in which a die-encapsulated map code is hidden in a lead frame is illustrated in cross-section in FIG. 2 is a schematic plan view showing the wafer holder of the semiconductor package structure on the upper surface thereof. FIG. 3 is a partial cross-sectional view showing the wafer holder of the semiconductor package structure taken along the line of FIG. 3-3, taken at one of the identification points and being formed at the hole. A semiconductor package structure 100 for concealing a seal map code in a lead frame includes a wafer holder 110 and a plurality of pins 120, a wafer 130, and a mold seal 140. The wafer holder 110 and the pins 120 are made of a metal, such as a copper alloy or an iron alloy. In the packaging process, the wafer holder 110 and the pins 120 can be integrally connected to the lead frame. The wafer holder 110 is electrically separated from the pins 120 in a package configuration. Usually, the wafer holder 110 is integrally connected to the lead frame by a plurality of tie bars for carrying the wafer 130 in the process, and some of the tie bars remain in the package structure after sawing and singulation. . The semiconductor package structure 100 can be a saw-type quad flat no-spot (saw QFN) package structure, that is, the pins 120 do not have lateral extensions to the outside of the molding compound 140 and are bent outside the pins. Instead, the lower surface of the pins 120 is utilized as a surface joint region for solder bonding.

該晶片承座110之上表面係具有一黏晶區111以及一編碼區112,該編碼區112係圍繞該黏晶區111,該黏晶區111係為安裝該晶片130之區域,故該編碼區112係屬於該晶片承座110不被該晶片130遮蓋的一部份。通常該編碼區112係小於該黏晶區 111。更重要地,該編碼區112係具有複數個辨識點113與一基準點114,該基準點114係定義該些辨識點113之次序。在本實施例中,第4圖係為對應該半導體封裝構造100之該晶片承座110之該些辨識點113之次序定義圖,以該基準點114為方位判定的基準Pin1,可依順時鐘方式定義出該些辨識點113之次序,例如由1至10的辨識點位置。更具體地,該些辨識點113係可等距排列在該晶片承座110之四周圍,在同一側的辨識點113係為相同間距,而不同側的辨識點113的最鄰近間距係為大於同一側的間距。 The upper surface of the wafer holder 110 has a die-bonding region 111 and a coding region 112. The code region 112 surrounds the die-bond region 111. The die-bond region 111 is a region where the wafer 130 is mounted. The region 112 is part of the wafer holder 110 that is not covered by the wafer 130. Usually, the coding region 112 is smaller than the die bonding region. 111. More importantly, the coding region 112 has a plurality of identification points 113 and a reference point 114, and the reference point 114 defines the order of the identification points 113. In the present embodiment, FIG. 4 is a diagram defining the order of the identification points 113 of the wafer holder 110 of the semiconductor package structure 100. The reference point 114 is the reference Pin1 of the orientation determination, and can be clockwise. The manner defines the order of the identification points 113, for example, the identification point position from 1 to 10. More specifically, the identification points 113 are equally arranged around the four wafer holders 110, and the identification points 113 on the same side are the same pitch, and the closest neighboring points of the identification points 113 on different sides are larger than The spacing on the same side.

該晶片130係設置於該黏晶區111上並電性連接至該些引腳120。該晶片130係可為一由晶圓切割出之微電子元件,該晶片130係可具有一主動面132與一相對之背面133,複數個銲墊131係可設置於該主動面132。該主動面132係為該晶片130製作有積體電路的表面,該些銲墊131係為溝通積體電路的電極。可利用一液態塗佈或膠膜式之黏晶材料170將該晶片130之該背面133黏接到該黏晶區111,打線形成之複數個銲線180係可電性連接該晶片130之該複數個銲墊131至該些引腳120。具體地,該黏晶區111係可為凹陷,該晶片130係可略為沉置於該黏晶區111中(如第1圖所示),以防止該黏晶材料170不當地污染到該編碼區112及該些辨識點113。較佳地,該黏晶區111之凹陷深度係可不貫穿該晶片承座110,以防止該黏晶材料170的模封外露。 The wafer 130 is disposed on the die bond region 111 and electrically connected to the pins 120. The wafer 130 can be a microelectronic component cut from a wafer. The wafer 130 can have an active surface 132 and an opposite back surface 133. The plurality of solder pads 131 can be disposed on the active surface 132. The active surface 132 is a surface on which the integrated circuit is formed on the wafer 130. The pads 131 are electrodes that communicate the integrated circuit. The back surface 133 of the wafer 130 may be adhered to the die bonding region 111 by a liquid coating or film type die bonding material 170. The plurality of bonding wires 180 formed by wire bonding may be electrically connected to the wafer 130. A plurality of pads 131 are connected to the pins 120. Specifically, the die-bonding region 111 can be a recess, and the wafer 130 can be slightly sunk in the die-bonding region 111 (as shown in FIG. 1) to prevent the die-bonding material 170 from being improperly contaminated to the code. The area 112 and the identification points 113. Preferably, the recessed depth of the die-bonding region 111 may not penetrate the wafer holder 110 to prevent the die-bonding of the die-bonding material 170 from being exposed.

該模封膠體140係密封該晶片130並結合該晶片承座110與該些引腳120。該模封膠體140係可為模封環化合物 (EMC)、或是熱固性的複合式電絕緣材料。在本實施例中,該模封膠體140係可更密封該些銲線180。再請參閱第1圖,該晶片承座110之該第一下表面115與該些引腳120之複數個第二下表面121係可顯露於該模封膠體140之底部,以成為無外接腳導線架之封裝型態,例如四方扁平無接腳式(QFN)封裝。 The molding compound 140 seals the wafer 130 and bonds the wafer holder 110 to the pins 120. The molding compound 140 can be a mold ring compound (EMC), or thermoset composite electrical insulation. In the present embodiment, the molding compound 140 can seal the bonding wires 180 more. Referring to FIG. 1 , the first lower surface 115 of the wafer holder 110 and the plurality of second lower surfaces 121 of the pins 120 can be exposed at the bottom of the molding compound 140 to become an external pin. The package type of the lead frame, such as a quad flat no-pin (QFN) package.

第5圖係顯示模封陣列地址與地圖編碼對照關係之第一模封地圖之示意圖。模封地圖係被應用於指引複數個半導體封裝構造在一無外接腳式導線架中之模封陣列地址。在本實施例中,第一模封地圖係可對照至在一模封陣列區中具有34直行與9橫列的封裝單元的陣列組合,故該第一模封地圖包含共306個模封陣列地址。該第一模封地圖係對應至由34乘以9矩陣排列成的封裝單元排列的模封陣列區,每一模封陣列地址各給予一獨特的地圖編碼,當地圖編碼能以間接、隱藏與適當轉換方式表現在該晶片承座110的有限空間時,如此便能以隱密手段辨別每一半導體封裝構造於模封陣列封裝製程中在一模封陣列區中的位置,並且不會造成半導體封裝構造的外觀與規格的差異。另外,依照由不同數量的封裝單元排列成之模封陣列區,應準備不同且對應之模封地圖。 Figure 5 is a schematic diagram showing a first modular map in which the seal array address is compared with the map code. The molded map is used to direct a plurality of semiconductor package structures to a masked array address in an external leadless lead frame. In this embodiment, the first molded map can be combined with an array having 34 straight rows and 9 horizontally arranged package units in a sealed array region, so the first molded map contains a total of 306 molded arrays. address. The first sealed map corresponds to a sealed array area arranged by a package unit arranged by 34 times 9 matrix, each of which is given a unique map code, and the local map code can be indirectly, hidden and When the proper conversion mode is expressed in the limited space of the wafer holder 110, the position of each semiconductor package structure in the die-array array process in the die-array array process can be discriminated in a hidden manner, and the semiconductor is not caused. The difference in appearance and specifications of the package construction. In addition, different and corresponding molded maps should be prepared in accordance with the patterned array regions arranged by different numbers of package units.

如第6A、7A、9A與10A圖所示之一辨識碼孔配置(容後詳述)係包含一個或一個以上的凹孔150,其係選擇性形成於該些辨識點113,以組成如第6B、7B、9B與10B圖所示之一單位辨識碼(unit ID code),並由該單位辨識碼轉換成一地圖編碼,藉以確定該晶片承座110在該導線架中之模封陣列地址。以X光透視該 半導體封裝構造100,可觀測出在該編碼區112之辨識碼孔配置,有凹孔150之辨識點可辨識為「1」,無凹孔之辨識點可辨識為「0」,再依辨識點的位置依序組成該單位辨識碼。較佳地,如第1及3圖所示,該凹孔150係可不貫穿該晶片承座110,以防止該晶片承座110之一第一下表面115被該模封膠體140溢膠污染。如第3圖所示,該凹孔150係可由半蝕刻形成,該凹孔150之直徑範圍係可介於0.09mm~0.15mm,該凹孔150之標準深度係可為0.08mm,其深度範圍係可介於0.05~0.11mm。此外,該編碼區112之寬度係可為0.2mm。該晶片承座110之厚度係約為0.2mm,該黏晶區111之凹陷深度範圍係可介於0.11mm~0.17mm。故該凹孔150之深度係可不大於該黏晶區111之凹陷深度,以維持該晶片承座110之周邊結構。 An identification code hole arrangement (described in detail later) as shown in FIGS. 6A, 7A, 9A, and 10A includes one or more recessed holes 150 selectively formed in the identification points 113 to constitute a unit identification code (unit ID code) shown in FIGS. 6B, 7B, 9B and 10B, and converted into a map code by the unit identification code to determine a sealed array address of the wafer holder 110 in the lead frame . X-ray perspective The semiconductor package structure 100 can observe the identification code hole arrangement in the coding area 112. The identification point of the concave hole 150 can be recognized as “1”, and the identification point without the concave hole can be recognized as “0”, and then the identification point is recognized. The location of the unit constitutes the unit identification code. Preferably, as shown in FIGS. 1 and 3, the recess 150 may not penetrate the wafer holder 110 to prevent the first lower surface 115 of the wafer holder 110 from being contaminated by the molding compound 140. As shown in FIG. 3, the recess 150 can be formed by a half etching. The recess 150 can have a diameter ranging from 0.09 mm to 0.15 mm, and the recess 150 can have a standard depth of 0.08 mm. The system can be between 0.05 and 0.11 mm. Further, the width of the code region 112 can be 0.2 mm. The thickness of the wafer holder 110 is about 0.2 mm, and the recessed depth of the die-bonding region 111 can range from 0.11 mm to 0.17 mm. Therefore, the depth of the recess 150 may not be greater than the recess depth of the die region 111 to maintain the peripheral structure of the wafer holder 110.

請參閱第1與3圖,較佳地,該晶片承座110在該編碼區112之外係可形成有一電鍍層160,以使得該編碼區112介於該黏晶區111與該電鍍層160之間而易於辨識。尤佳地,請參閱第1圖,該模封膠體140係可填入該凹孔150,使得具有該凹孔150的該辨識點113為深色表現,以利辨識。此外,請參閱第2圖,該基準點114係可為該電鍍層160之一弧凸邊,故具有容易成形與低成本製作之功效,該基準點114係亦可為如十字形或L形之非圓形孔或非圓形圖案。該基準點114之特定形狀係可作為對應模封地圖的選擇。在本實施例中,該電鍍層160係可更形成於該晶片承座110之複數個繫條116(tie bar)上,以增加該晶片承座110之接地或 電源連接之打線接合區域。 Referring to FIGS. 1 and 3 , the wafer holder 110 is formed with a plating layer 160 outside the coding region 112 such that the coding region 112 is interposed between the die bond region 111 and the plating layer 160 . Easy to identify between. More preferably, referring to FIG. 1 , the molding compound 140 can be filled into the recess 150 such that the identification point 113 having the recess 150 is dark-colored for identification. In addition, referring to FIG. 2, the reference point 114 can be an arc-arc edge of the plating layer 160, so that it has the effect of easy forming and low-cost fabrication. The reference point 114 can also be a cross or an L shape. Non-circular holes or non-circular patterns. The particular shape of the fiducial 114 can be selected as a corresponding molded map. In this embodiment, the plating layer 160 may be further formed on a plurality of tie bars 116 of the wafer holder 110 to increase the grounding of the wafer holder 110 or The wire bonding area of the power connection.

第6A圖係繪示在一半導體封裝構造之晶片承座上之一第一辨識點孔配置之示意圖。一第一半導體封裝構造係包含一晶片承座110A,其上表面之編碼區112係形成有一第一辨識碼孔配置,包含兩個凹孔150,其係位於第7與第9位置之辨識點113。如第6B圖所示,由該第一辨識碼孔配置能組成一第一單位辨識碼「0000001010」,再利用二進位轉換成十進位的方式形成一第一地圖編碼「10」,第一地圖編碼對照至第一模封地圖,可指到一第一模封地圖位址,其係位在34乘以9矩陣的第2直行與第1橫列的位置,這表示該第一半導體封裝構造之晶片承座110A在模封陣列封裝製程中係位於其所依存導線架之34×9模封陣列區位在第2直行與第1橫列的單元位置。 FIG. 6A is a schematic diagram showing a first identification dot hole arrangement on a wafer holder of a semiconductor package structure. A first semiconductor package structure includes a wafer holder 110A, and a coding area 112 on an upper surface thereof is formed with a first identification code hole arrangement, including two concave holes 150, which are located at the identification points of the 7th and 9th positions. 113. As shown in FIG. 6B, the first identification code hole can be configured to form a first unit identification code "0000001010", and then converted into a decimal by the binary to form a first map code "10", the first map. The code comparison to the first template map may refer to a first template map address, which is located at a position of a second straight line and a first line of 34 times 9 matrix, which indicates the first semiconductor package structure The wafer holder 110A is located in the unit position of the second straight line and the first course in the 34×9 mold array region of the dependent lead frame in the mold array packaging process.

第7A圖係繪示在另一半導體封裝構造之晶片承座上之一第二辨識點孔配置之示意圖。一第二半導體封裝構造係包含一晶片承座110B,其上表面之編碼區112係形成有一第二辨識碼孔配置,包含六個凹孔150,其係位於第2、第5、第7、第8、第9與第10位置之辨識點113。如第7B圖所示,由該第二辨識碼孔配置能組成一第二單位辨識碼「0100101111」,再利用二進位轉換成十進位的方式形成一第二地圖編碼「303」,第二地圖編碼對照至第一模封地圖,可指到一第二模封地圖位址,其係位在34乘以9矩陣的第34直行與第6橫列的位置,這表示該第二半導體封裝構造之晶片承座110B在模封陣列封裝製程中係位於其所依存導線架之34 ×9模封陣列區位在第34直行與第6橫列的單元位置。 FIG. 7A is a schematic diagram showing a second identification dot hole arrangement on a wafer holder of another semiconductor package structure. A second semiconductor package structure includes a wafer holder 110B, and a coding area 112 on the upper surface thereof is formed with a second identification code hole arrangement, and includes six concave holes 150, which are located at the second, fifth, seventh, Identification points 113 of the eighth, ninth and tenth positions. As shown in FIG. 7B, the second identification code hole can be configured to form a second unit identification code "0100101111", and then the second map code "303" is formed by converting the binary bit into a decimal position. The code comparison to the first mask map may refer to a second mask map address, which is located at 34th and 9th rows of the 34th straight row and the sixth row, which indicates the second semiconductor package structure The wafer carrier 110B is located in its associated lead frame in the packaged array packaging process. The ×9 mold-sealed array is located at the unit positions of the 34th straight row and the 6th horizontal row.

第8圖係顯示模封陣列地址與地圖編碼對照關係之第二模封地圖之示意圖。在本實施例中,第二模封地圖係可對照至在一模封陣列區中具有64直行與16橫列的封裝單元的陣列組合,故該第二模封地圖包含共1024個模封陣列地址。該第二模封地圖係對應至由64乘以16矩陣排列成的封裝單元排列的模封陣列區,每一模封陣列地址各給予一獨特的地圖編碼,該地圖編碼係以間接、隱藏與適當轉換方式表現在該晶片承座110的有限空間。 Figure 8 is a schematic diagram showing a second modular map in which the encapsulated array address is compared with the map code. In this embodiment, the second mold map can be combined with an array of package units having 64 straight rows and 16 horizontal rows in a patterned array region, so the second mold map comprises a total of 1024 mold arrays. address. The second molded map corresponds to a sealed array area arranged by a package unit arranged by 64 times 16 matrix, each of which is given a unique map code, the map code is indirectly, hidden and A suitable conversion mode is manifested in the limited space of the wafer holder 110.

第9A圖係繪示在另一半導體封裝構造之晶片承座上之一第三辨識點孔配置之示意圖。一第三半導體封裝構造係包含一晶片承座110C,其上表面之編碼區112係具有三角形或其它圖案之基準點114,可由該電鍍層160之一部份所構成,以指定該第二模封地圖並定義該些辨識點113之次序。該晶片承座110C之上表面之編碼區112係形成有一第三辨識碼孔配置,包含兩個凹孔150,其係位於第9與第10位置之辨識點113。如第9B圖所示,由該第三辨識碼孔配置能組成一第三單位辨識碼「0000000011」,再利用二進位轉換成十進位的方式形成一第三地圖編碼「3」,第三地圖編碼對照至如第8圖所示之第二模封地圖,可指到一第三模封地圖位址,其係位在64乘以16矩陣的第1直行與第3橫列的位置,這表示該第三半導體封裝構造之晶片承座110C在模封陣列封裝製程中係位於其所依存導線架之64×16模封陣列區位在第1直行與第3橫列的單元位置。 FIG. 9A is a schematic diagram showing a third identification dot hole arrangement on a wafer holder of another semiconductor package structure. A third semiconductor package structure includes a wafer carrier 110C having a coded region 112 on the upper surface thereof having a triangular or other pattern reference point 114, which may be formed by a portion of the plating layer 160 to designate the second mode The map is sealed and the order of the identification points 113 is defined. The coding area 112 on the upper surface of the wafer holder 110C is formed with a third identification code hole arrangement, and includes two recessed holes 150, which are located at the identification points 113 of the 9th and 10th positions. As shown in FIG. 9B, the third identification code hole can be configured to form a third unit identification code "0000000011", and then converted into a decimal by the binary conversion to form a third map code "3", the third map. The code is compared to the second mask map as shown in FIG. 8, which may refer to a third modular map address, which is located at a position of the first straight line and the third horizontal line of 64 times 16 matrix. The wafer carrier 110C representing the third semiconductor package structure is located at the cell position of the first straight row and the third row in the 64×16 mask array region of the dependent lead frame in the die package array packaging process.

第10A圖係繪示在另一半導體封裝構造之晶片承座上之一第四辨識點孔配置之示意圖。一第四半導體封裝構造係包含一晶片承座110D,該晶片承座110D之上表面之編碼區112係形成有一第四辨識碼孔配置,包含九個凹孔150,其係位於第1、第2、第3、第4、第5、第6、第7、第8與第9位置之辨識點113。如第10B圖所示,由該第四辨識碼孔配置能組成一第四單位辨識碼「1111111110」,再利用二進位轉換成十進位的方式形成一第四地圖編碼「1022」,第四地圖編碼對照至如第8圖所示之第二模封地圖,可指到一第四模封地圖位址,其係位在64乘以16矩陣的第64直行與第14橫列的位置,這表示該第四半導體封裝構造之晶片承座110D在模封陣列封裝製程中係位於其所依存導線架之64×16模封陣列區位在第64直行與第14橫列的單元位置。此外,對應地圖編碼為「1023」的單位辨識碼係可為「1111111111」,對應地圖編碼為「1024」的單位辨識碼係可為「0000000000」,以無記號表示,當已定義辨識點(位置1至位置10)皆為無凹孔而被辨識為「0」時,以基準點作為增生的辨識點(即位置0),單位辨識碼係可為「10000000000」,故可得到地圖編碼「1024」。 FIG. 10A is a schematic diagram showing a fourth identification dot hole arrangement on a wafer holder of another semiconductor package structure. A fourth semiconductor package structure includes a wafer holder 110D. The code region 112 on the upper surface of the wafer holder 110D is formed with a fourth identification code hole arrangement, and includes nine concave holes 150, which are located in the first and the first 2. Identification points 113 of the third, fourth, fifth, sixth, seventh, eighth and ninth positions. As shown in FIG. 10B, the fourth identification code hole can be configured to form a fourth unit identification code "1111111110", and then a binary map code "1022" is formed by converting the binary into a decimal, the fourth map. The code is compared to the second mask map as shown in Fig. 8, which may refer to a fourth modular map address, which is located at 64 times the 64th straight line and the 14th horizontal position of the 16 matrix. The wafer holder 110D representing the fourth semiconductor package structure is located at the unit position of the 64th straight row and the 14th row in the 64×16 mold array region of the dependent lead frame in the die package array packaging process. In addition, the unit identification code corresponding to the map code "1023" can be "1111111111", and the unit identification code corresponding to the map code "1024" can be "0000000000", which is indicated by an unmarked mark when the identification point is defined (position When 1 to 10) are identified as "0" without a recess, the reference point is used as the identification point of the hyperplasia (ie, position 0), and the unit identification code can be "10000000000", so the map code "1024" can be obtained. "."

因此,本發明提供之一種導線架內隱藏模封地圖編碼之半導體封裝構造係在晶片承座之有限空間內,以半蝕刻方式做出辨識點孔配置,以組成可間接對應到模封地圖之單位辨識碼,故可確定製程中晶片承座在導線架中之模封陣列地址,有效追蹤發生問題的封裝產品在模封陣列區的相對位置,進而區分出 良品與不良品,達到提升品質管控水準。 Therefore, the semiconductor package structure of the hidden die seal map code in the lead frame of the present invention is disposed in a limited space of the wafer holder, and the identification dot hole arrangement is formed by a half etching method to form an indirect corresponding to the molded map. Unit identification code, so it can determine the address of the module array in the lead frame of the wafer holder in the process, effectively track the relative position of the packaged product in the molded array area, and then distinguish Good quality and bad products, to achieve quality control standards.

以上所揭露的僅為本發明較佳實施例而已,當然不能以此來限定本發明之權利範圍,因此依本發明權利要求所作的等同變化,仍屬本發明所涵蓋的範圍。 The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and thus equivalent changes made in the claims of the present invention are still within the scope of the present invention.

110‧‧‧晶片承座 110‧‧‧ wafer holder

111‧‧‧黏晶區 111‧‧‧Macked area

112‧‧‧編碼區 112‧‧‧ coding area

113‧‧‧辨識點 113‧‧‧ Identification points

114‧‧‧基準點 114‧‧‧ benchmark

116‧‧‧繫條 116‧‧‧ tied

160‧‧‧電鍍層 160‧‧‧Electroplating

Claims (10)

一種導線架內隱藏模封地圖編碼之半導體封裝構造,包含:一導線架之一晶片承座與複數個引腳,該晶片承座之上表面係具有一黏晶區以及一編碼區,該編碼區係圍繞該黏晶區;一晶片,係設置於該黏晶區上並電性連接至該些引腳;以及一模封膠體,係密封該晶片並結合該晶片承座與該些引腳;其中,該編碼區係具有複數個辨識點與一基準點,該基準點係定義該些辨識點之次序,一辨識碼孔配置係包含一個或一個以上的凹孔,其係選擇性形成於該些辨識點,以組成一單位辨識碼,並由該單位辨識碼轉換成一地圖編碼,藉以確定該晶片承座在該導線架中之模封陣列地址。 A semiconductor package structure for concealing a seal map code in a lead frame, comprising: a wafer holder and a plurality of pins of a lead frame, the upper surface of the wafer holder having a die bond region and a coding region, the code a region surrounding the die-bonding region; a wafer disposed on the die-bonding region and electrically connected to the pins; and a molding compound sealing the wafer and bonding the wafer carrier to the pins Wherein the coding region has a plurality of identification points and a reference point, the reference point defines an order of the identification points, and an identification code hole arrangement comprises one or more concave holes, which are selectively formed on The identification points are combined to form a unit identification code, and the unit identification code is converted into a map code to determine the address of the package array of the wafer holder in the lead frame. 如申請專利範圍第1項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該晶片承座在該編碼區之外係形成有一電鍍層,以使得該編碼區介於該黏晶區與該電鍍層之間。 The semiconductor package structure of the die-encapsulated map code in the lead frame of claim 1, wherein the wafer holder is formed with a plating layer outside the coding region, so that the coding region is interposed between the die bond Between the zone and the plating layer. 如申請專利範圍第2項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該模封膠體係填入該凹孔。 The semiconductor package structure of the die-encapsulated map code in the lead frame of claim 2, wherein the mold encapsulation system fills the recess. 如申請專利範圍第2項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該基準點係為該電鍍層之一弧凸邊。 The semiconductor package structure of the die-encapsulated map code in the lead frame of claim 2, wherein the reference point is an arc-arc edge of the plating layer. 如申請專利範圍第1項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該黏晶區係為凹陷,該晶片係略為沉置於該黏晶區中。 The semiconductor package structure of the recessed-molded map code in the lead frame according to claim 1, wherein the die-bonding region is a recess, and the wafer is slightly sunk in the die-bonding region. 如申請專利範圍第5項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該黏晶區之凹陷深度係不貫穿該晶片承座。 The semiconductor package structure of the die-encapsulated map code in the lead frame of claim 5, wherein the recessed depth of the die-bonding region does not penetrate the wafer holder. 如申請專利範圍第1項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,另包含複數個銲線,係電性連接該晶片之複數個銲墊至該些引腳,該模封膠體係更密封該些銲線。 The semiconductor package structure of the recessed-molded map code in the lead frame according to the first aspect of the patent application, further comprising a plurality of bonding wires electrically connected to the plurality of pads of the chip to the pins, the die seal The glue system seals the wire bonds more. 如申請專利範圍第1項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該些辨識點係等距排列在該晶片承座之四周圍。 The semiconductor package structure of the recessed-molded map code in the lead frame according to claim 1, wherein the identification points are arranged equidistantly around the wafer holder. 如申請專利範圍第1至8項任一項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該晶片承座之一第一下表面與該些引腳之複數個第二下表面係顯露於該模封膠體之底部。 The semiconductor package structure of the recessed-molded map code in the lead frame according to any one of claims 1 to 8, wherein the first lower surface of the one of the wafer holders and the plurality of second pins of the pins The surface system is exposed at the bottom of the molding compound. 如申請專利範圍第9項所述之導線架內隱藏模封地圖編碼之半導體封裝構造,其中該凹孔係不貫穿該晶片承座。 The semiconductor package structure of the die-encapsulated map code in the lead frame of claim 9, wherein the recessed hole does not penetrate the wafer holder.
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TW200616134A (en) * 2004-11-15 2006-05-16 Chipmos Technologies Inc Chip carrier tape having number marking of test pads
TW200741945A (en) * 2006-04-26 2007-11-01 Chipmos Technologies Inc Inspection method for package carrier and apparatus thereof
CN102800656A (en) * 2011-05-20 2012-11-28 精材科技股份有限公司 Chip package, method for forming the same, and package wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200616134A (en) * 2004-11-15 2006-05-16 Chipmos Technologies Inc Chip carrier tape having number marking of test pads
TW200741945A (en) * 2006-04-26 2007-11-01 Chipmos Technologies Inc Inspection method for package carrier and apparatus thereof
CN102800656A (en) * 2011-05-20 2012-11-28 精材科技股份有限公司 Chip package, method for forming the same, and package wafer

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