TWI579105B - Abrasive grain embedding device, polishing device and polishing method - Google Patents

Abrasive grain embedding device, polishing device and polishing method Download PDF

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TWI579105B
TWI579105B TW101128269A TW101128269A TWI579105B TW I579105 B TWI579105 B TW I579105B TW 101128269 A TW101128269 A TW 101128269A TW 101128269 A TW101128269 A TW 101128269A TW I579105 B TWI579105 B TW I579105B
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polishing
pressing
abrasive grains
slurry
workpiece
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TW101128269A
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TW201318768A (en
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Haruhiko Hotta
Fumiteru Tashino
Xiaoming Qiu
Naoya Iwata
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Disco Corp
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Description

研磨粒埋入裝置、拋光裝置及拋光方法 Abrasive grain embedding device, polishing device and polishing method 技術領域 Technical field

本發明係有關於一種用於朝半導體晶圓、磁頭、電子零件、光學零件等各種被加工物之研磨所使用之研磨定盤之上面埋入研磨粒之研磨粒埋入裝置,包含該研磨粒埋入裝置之拋光裝置,以及使用該拋光裝置而進行被加工物之拋光之拋光方法。 The present invention relates to an abrasive grain embedding device for embedding abrasive grains on a polishing plate used for polishing various workpieces such as semiconductor wafers, magnetic heads, electronic parts, and optical parts, including the abrasive grains. A polishing device for embedding a device, and a polishing method for polishing the workpiece using the polishing device.

背景技術 Background technique

在半導體晶圓、磁頭、電子零件、光學零件等之製程中,被加工物之表面將藉拋光裝置而進行研磨。其次,業經研磨之被加工物之表面上將形成LSI等裝置,或以其表面作為光學面使用。 In the process of semiconductor wafers, magnetic heads, electronic parts, optical parts, and the like, the surface of the workpiece is polished by a polishing apparatus. Next, a device such as an LSI is formed on the surface of the workpiece to be polished, or the surface thereof is used as an optical surface.

被加工物之表面研磨所使用之拋光裝置包含受支持成可旋轉狀態之研磨定盤、可朝定盤表面供給包含研磨粒(游離研磨粒)之漿液之漿液供給機構、可保持被加工物而使其接觸定盤表面之被加工物保持構件。其次,使定盤旋轉,並朝定盤與被加工物之間供給包含研磨粒之漿液,同時朝定盤壓附被加工物保持構件所保持之被加工物,而實施被加工物之研磨加工。又,尤其就業經研磨之面要求較高之品質時,可在前述研磨加工之結束前之一定時間點供給不包含研磨粒之漿液並進行研磨,而減少游離研磨粒對被加工物造成之損傷或損壞,以作為修整製程。 The polishing apparatus used for the surface polishing of the workpiece includes a polishing plate supported by a rotatable state, a slurry supply mechanism for supplying a slurry containing abrasive grains (free abrasive grains) to the surface of the plate, and a workpiece to be held. It is brought into contact with the workpiece holding member of the surface of the plate. Then, the fixed disk is rotated, and the slurry containing the abrasive grains is supplied between the fixed plate and the workpiece, and the workpiece held by the workpiece holding member is pressed toward the fixed plate to perform the grinding process of the workpiece. . Further, in particular, when the quality of the surface to be ground is required to be high, the slurry containing no abrasive grains may be supplied and polished at a certain time before the end of the polishing process to reduce the damage of the free abrasive grains to the workpiece. Or damaged as a finishing process.

然而,被研磨面包含硬度不同之部分之被加工物一旦使用含有研磨粒之漿液進行研磨加工,硬度較低之部分將較硬度較高之部分更早受研磨,故漿液中之研磨粒將集中於硬度較低之部分而局部過度實施研磨而成問題。因此,已提案有一種朝定盤埋入研磨粒,並使用埋入之研磨粒之一部分露出之狀態之研磨定盤進行研磨之方法(參照諸如專利文獻1)。上述研磨方法特別適用於對被加工物要求較高之面性質時。 However, if the workpiece having a different hardness on the surface to be polished is ground using a slurry containing abrasive grains, the portion having a lower hardness is ground earlier than the portion having a higher hardness, so that the abrasive grains in the slurry are concentrated. The problem of partial over-grinding in the lower hardness portion is a problem. Therefore, there has been proposed a method in which abrasive grains are embedded in a fixed disk and polished using a polishing plate in a state in which one of the embedded abrasive grains is partially exposed (see, for example, Patent Document 1). The above grinding method is particularly suitable when the surface properties of the workpiece are required to be high.

形成已埋入研磨粒之研磨定盤時,係對諸如錫所構成之研磨定盤塗布包含研磨粒之潤滑劑(漿液),並藉推壓構件依預定之力推壓研磨定盤與潤滑劑,同時使推壓構件與研磨定盤進行滑動,而朝研磨定盤埋入潤滑劑中包含之研磨粒(參照專利文獻1)。 When a grinding plate in which abrasive grains are embedded is formed, a lubricant (slurry) containing abrasive grains is applied to a polishing platen made of tin, and the grinding plate and the lubricant are pushed by a pressing force according to a predetermined force. At the same time, the pressing member and the polishing platen are slid, and the abrasive grains contained in the lubricant are embedded in the polishing platen (see Patent Document 1).

如上,為僅使用不含游離研磨粒之漿液而實施研磨加工,必須在研磨加工前先對定盤埋入研磨粒,或為避免定盤中埋入之研磨粒徐緩磨損而降低研磨功能,而必須定期實施對定盤埋入研磨粒之作業。 As described above, in order to perform the polishing process using only the slurry containing no free abrasive grains, it is necessary to embed the abrasive grains in the fixed plate before the polishing process, or to reduce the abrasive function by avoiding the abrasive grains embedded in the fixed plate. The operation of burying the abrasive grains in the fixed plate must be carried out regularly.

然而,對研磨定盤之表面埋入充分數量之研磨粒需時甚長而成問題。因此,為縮短對定盤埋入研磨粒之時間,已提案有一種可對推壓構件施加超音波振動之研磨定盤之製造裝置(參照諸如專利文獻2)。 However, it takes a long time to embed a sufficient amount of abrasive grains on the surface of the polishing plate. Therefore, in order to shorten the time for embedding the abrasive grains in the fixed plate, a manufacturing apparatus for a polishing plate to which ultrasonic vibration is applied to the pressing member has been proposed (see, for example, Patent Document 2).

【先行技術文獻】 [First technical literature] 【專利文獻】 [Patent Literature]

【專利文獻1】日本專利特開平7-299737號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 7-299737

【專利文獻2】日本專利特開2008-238398號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-238398

發明概要 Summary of invention

然而,專利文獻2所揭露之習知之研磨定盤之製造裝置中,為有效率地朝推壓構件與研磨定盤之間供給漿液,而於推壓構件形成有溝槽。因此,一旦對推壓構件施加超音波振動並進行研磨粒之埋入,則將不均一地對研磨定盤之表面埋入研磨粒,而產生局部過度埋入研磨粒之區域以及未埋入之區域,而成問題。本案申請人致力鑽研之結果,則發現上述研磨粒之埋入不均係由推壓構件所推壓之漿液之流體壓力不均所導致。即,推壓構件形成有溝槽,故各推壓面對滑動方向之長度互異。因此,因楔效應而朝滑動方向產生之流體壓力將不均而導致研磨粒之埋入不均。 However, in the conventional polishing apparatus manufacturing apparatus disclosed in Patent Document 2, the slurry is efficiently supplied between the pressing member and the polishing platen, and the pressing member is formed with a groove. Therefore, once the ultrasonic vibration is applied to the pressing member and the polishing particles are buried, the abrasive grains are buried unevenly on the surface of the polishing plate, and the region where the abrasive grains are partially buried excessively is not buried. The area is a problem. As a result of the research conducted by the applicant, it was found that the unevenness of the above-mentioned abrasive grains was caused by the uneven fluid pressure of the slurry which was pressed by the pressing member. That is, since the pressing member is formed with a groove, the length of each pressing surface facing the sliding direction is different from each other. Therefore, the fluid pressure generated in the sliding direction due to the wedge effect will be uneven, resulting in uneven embedding of the abrasive grains.

尤其,若提高超音波之強度,將局部發生孔蝕,而使定盤表面受損。為予以避免,即便欲提高超音波強度,亦不得不使用小於致生孔蝕之值之強度之超音波強度。故而,難以提昇研磨粒之埋入效率。 In particular, if the intensity of the ultrasonic wave is increased, pitting corrosion occurs locally, and the surface of the fixing plate is damaged. To avoid this, even if you want to increase the ultrasonic intensity, you must use an ultrasonic intensity that is less than the value of the resulting pitting. Therefore, it is difficult to improve the embedding efficiency of the abrasive grains.

本發明係有鑑於上述問題而設計者,目的在抑制研磨粒之埋入不均,並有效率地對研磨定盤埋入研磨粒。 The present invention has been made in view of the above problems, and has an object of suppressing the unevenness of embedding of abrasive grains and efficiently embedding abrasive grains into a polishing platen.

依據本發明之第1層面,可提供一種研磨粒埋入裝置,可將漿液中包含之研磨粒埋入研磨定盤之表面,包 含有:推壓機構,可推壓前述研磨定盤;漿液供給機構,可朝前述研磨定盤之表面供給包含研磨粒之漿液;及,滑動機構,可使前述推壓機構與前述研磨定盤進行滑動;其中,前述推壓機構包含推壓構件、配設於前述推壓構件之上方而可朝前述研磨定盤壓附前述推壓構件之重錘構件、可朝前述推壓構件施加超音波之超音波振子,前述推壓構件則包含配設有複數圓盤狀之推壓片之推壓面。 According to the first aspect of the present invention, an abrasive grain embedding device can be provided, which can embed the abrasive particles contained in the slurry into the surface of the polishing plate. The utility model comprises: a pressing mechanism capable of pushing the polishing plate; a slurry supply mechanism capable of supplying a slurry containing abrasive grains to a surface of the polishing plate; and a sliding mechanism for performing the pressing mechanism and the polishing plate The pressing mechanism includes a pressing member, a weight member disposed above the pressing member and capable of pressing the pressing member toward the polishing platen, and ultrasonic waves can be applied to the pressing member. In the ultrasonic vibrator, the pressing member includes a pressing surface provided with a plurality of disk-shaped pressing pieces.

推壓構件宜配置於不自研磨定盤之使用區域突出之位置。 The pressing member should be disposed at a position that does not protrude from the use area of the polishing plate.

依據本發明之第2層面,可提供一種拋光裝置,包含有:研磨定盤,包含可研磨被加工物之研磨面,而受支持成可旋轉狀態;旋轉驅動機構,可使前述研磨定盤進行旋轉;被加工物保持機構,包含與前述研磨定盤之前述研磨面相對而可保持被加工物之保持面,可將被加工物保持在與前述研磨定盤抵接之狀態;漿液供給機構,可朝前述研磨定盤之表面選擇性地供給包含研磨粒之漿液與不包含研磨粒之漿液;及,研磨粒埋入裝置,可藉推壓機構並經包含藉前述漿液供給機構而供至前述研磨定盤之表面之研磨粒之漿液而推壓前述研磨定盤,並使前述推壓機構與前述研磨定盤進行滑動而朝前述研磨定盤之表面埋入前述漿液中包含之研磨粒;其中,前述推壓機構包含推壓構件、配設於前述推壓構件之上方而可朝前述研磨定盤壓附前述推壓構件之重錘構件、可朝前述推壓構件施加超音波之超音波振子,前述推壓構件則包含配設有複數圓盤狀之推壓 片之推壓面。 According to a second aspect of the present invention, there is provided a polishing apparatus comprising: a polishing plate comprising a grinding surface capable of grinding a workpiece, and being supported in a rotatable state; and a rotary driving mechanism for allowing said polishing plate to be carried out Rotating; the workpiece holding mechanism includes a holding surface that can hold the workpiece relative to the polishing surface of the polishing platen, and can hold the workpiece in contact with the polishing platen; and the slurry supply mechanism The slurry containing the abrasive grains and the slurry containing no abrasive grains may be selectively supplied to the surface of the polishing plate; and the abrasive grain embedding device may be supplied to the foregoing by the pressing mechanism and by the slurry supply mechanism Grinding the slurry of the abrasive grains on the surface of the plate to press the polishing plate, and sliding the pressing mechanism and the polishing plate to embed the abrasive grains contained in the slurry toward the surface of the polishing plate; The pressing mechanism includes a pressing member and a weight member disposed above the pressing member to press the pressing member toward the polishing plate. The pressing member applies an ultrasonic ultrasonic vibrator, and the pressing member includes a plurality of disc-shaped pressing The pushing surface of the piece.

依據本發明之第3層面,可提供一種拋光方法,係使用申請專利範圍第3項之拋光裝置而拋光前述被加工物保持機構所保持之被加工物,包含以下步驟:第1拋光步驟,朝前述研磨定盤之表面供給包含研磨粒之漿液,同時藉前述推壓機構經包含前述研磨粒之漿液而推壓前述研磨定盤,並使前述推壓機構與前述研磨定盤進行滑動而朝前述研磨定盤之表面埋入前述漿液中包含之研磨粒,且使前述被加工物保持機構所保持之被加工物與前述研磨定盤進行滑動而拋光前述被加工物之表面;及,第2拋光步驟,在實施前述第1拋光步驟後,朝前述研磨定盤之表面供給不包含研磨粒之漿液,同時使前述被加工物保持機構所保持之被加工物與前述研磨定盤進行滑動而拋光前述被加工物之表面。 According to a third aspect of the present invention, there is provided a polishing method for polishing a workpiece held by the workpiece holding mechanism using the polishing apparatus of claim 3, comprising the following steps: a first polishing step, a slurry containing abrasive grains is supplied to the surface of the polishing plate, and the polishing plate is pressed by the pressing mechanism to press the polishing plate, and the pressing mechanism and the polishing plate are slid toward the foregoing The surface of the polishing plate is embedded with the abrasive grains contained in the slurry, and the workpiece held by the workpiece holding mechanism is slid with the polishing plate to polish the surface of the workpiece; and the second polishing After the first polishing step is performed, a slurry containing no abrasive grains is supplied to the surface of the polishing platen, and the workpiece held by the workpiece holding mechanism is slid with the polishing platen to polish the foregoing The surface of the workpiece.

本發明之第3層面中,在第1拋光步驟與第2拋光步驟之間,可進行清洗研磨定盤之清潔步驟。被加工物則由藍寶石、SiC、GaN及AlN所構成之群組中選出。 In the third aspect of the invention, the cleaning step of cleaning the polishing platen can be performed between the first polishing step and the second polishing step. The workpiece is selected from the group consisting of sapphire, SiC, GaN, and AlN.

本發明第1層面之研磨粒埋入裝置中,推壓構件包含配設有複數圓盤狀之推壓片之推壓面,故可使各推壓面對推壓機構與研磨定盤之相對滑動方向互為相同長度。因此,可使用超音波振動而促進研磨粒之埋入,並抑制流體應力之不均,而抑制研磨粒對研磨定盤之埋入不均。 In the abrasive grain embedding device according to the first aspect of the present invention, the pressing member includes a pressing surface provided with a plurality of disk-shaped pressing pieces, so that each pressing surface faces the pressing mechanism and the polishing platen. The sliding directions are the same length. Therefore, ultrasonic vibration can be used to promote the embedding of the abrasive grains, and the unevenness of the fluid stress can be suppressed, and the unevenness of the abrasive grains to the polishing plate can be suppressed.

又,將推壓構件配置於不自研磨定盤之使用區域 突出之位置,可使超音波振動所致生之壓力分布均一,而不導致孔蝕,故可避免研磨定盤之表面受損。 Moreover, the pressing member is disposed in a use area that is not self-grinding the fixed platen The prominent position can make the pressure distribution caused by ultrasonic vibration uniform, without causing pitting corrosion, thus avoiding damage to the surface of the polishing plate.

本發明第2層面之拋光裝置中,可使用包含研磨粒之漿液與不包含研磨粒之漿液,並可保持推壓機構與被加工物保持構件,故可兼具研磨粒埋入裝置之功能與拋光裝置之功能。且,拋光被加工物時,可選擇使用包含研磨粒之漿液與不包含研磨粒之漿液,故可進行拋光同時對研磨定盤埋入研磨粒,且,可視需要而分別採用使用游離研磨粒之拋光與不使用游離研磨粒之拋光。 In the polishing apparatus according to the second aspect of the present invention, the slurry containing the abrasive grains and the slurry containing no abrasive grains can be used, and the pressing mechanism and the workpiece holding member can be held, so that the function of the abrasive grain embedding device can be combined with The function of the polishing device. Moreover, when polishing the workpiece, the slurry containing the abrasive grains and the slurry containing no abrasive grains can be selected, so that the polishing particles can be polished while the polishing particles are embedded, and the free abrasive grains can be used as needed. Polishing with and without the use of free abrasive particles.

本發明第3層面之拋光方法中,在使用包含研磨粒之漿液而拋光被加工物之面之第1拋光步驟後,將進行使用不包含研磨粒之漿液而拋光被加工物之面之第2拋光步驟,故於第1拋光步驟中對研磨定盤埋入研磨粒。其次,第2拋光步驟中則藉包含已埋入之研磨粒之研磨定盤而進行拋光,故可提昇研磨效率。 In the polishing method according to the third aspect of the present invention, after the first polishing step of polishing the surface of the workpiece using the slurry containing the abrasive grains, the second surface of the workpiece is polished using the slurry containing no abrasive grains. In the polishing step, the abrasive grains are embedded in the polishing plate in the first polishing step. Next, in the second polishing step, the polishing is performed by the polishing plate containing the embedded abrasive grains, so that the polishing efficiency can be improved.

又,若於第1拋光步驟與第2拋光步驟之間進行清洗研磨定盤之清潔步驟,則可減少游離研磨粒所導致之被加工物之損傷或損壞。 Further, if the cleaning step of cleaning the polishing plate is performed between the first polishing step and the second polishing step, damage or damage of the workpiece due to the free abrasive grains can be reduced.

圖式簡單說明 Simple illustration

圖1係例示研磨粒埋入裝置之立體圖。 Fig. 1 is a perspective view showing an abrasive particle embedding device.

圖2係顯示推壓機構之第1例之分解立體圖。 Fig. 2 is an exploded perspective view showing a first example of the pressing mechanism.

圖3係顯示推壓機構之第1例之截面圖。 Fig. 3 is a cross-sectional view showing a first example of the pressing mechanism.

圖4係例示推壓機構所包含之推壓片之底面圖。 Fig. 4 is a bottom view showing a pressing piece included in the pressing mechanism.

圖5係例示構成研磨粒埋入裝置之旋轉支持機構之立 體圖。 Figure 5 is a diagram showing the rotation support mechanism constituting the abrasive grain embedding device. Body map.

圖6係顯示推壓構件與研磨定盤之位置及大小之關係之說明圖。 Fig. 6 is an explanatory view showing the relationship between the pressing member and the position and size of the polishing platen.

圖7係顯示研磨粒埋入時之推壓機構與研磨定盤之相對滑動方向之說明圖。 Fig. 7 is an explanatory view showing the relative sliding direction of the pressing mechanism and the polishing platen when the abrasive grains are buried.

圖8係顯示習知之推壓機構與研磨定盤之位置及大小之關係之說明圖。 Fig. 8 is an explanatory view showing the relationship between the conventional pressing mechanism and the position and size of the polishing platen.

圖9係顯示推壓片之第2例之底面圖。 Fig. 9 is a bottom plan view showing a second example of the pressing piece.

圖10係顯示推壓片之第3例之底面圖。 Fig. 10 is a bottom plan view showing a third example of the pressing piece.

圖11係顯示推壓片之第4例之底面圖。 Fig. 11 is a bottom plan view showing a fourth example of the pressing piece.

圖12係顯示推壓機構之第2例之分解立體圖。 Fig. 12 is an exploded perspective view showing a second example of the pressing mechanism.

圖13係顯示推壓機構之第2例之截面圖。 Fig. 13 is a cross-sectional view showing a second example of the pressing mechanism.

圖14係例示構成推壓機構之第2例之推壓構件之底面圖。 Fig. 14 is a bottom view showing a pressing member of a second example constituting the pressing mechanism.

圖15係顯示推壓構件與研磨定盤之位置及大小之關係之說明圖。 Fig. 15 is an explanatory view showing the relationship between the pressing member and the position and size of the polishing platen.

圖16係例示拋光裝置之立體圖。 Fig. 16 is a perspective view showing a polishing apparatus.

圖17係顯示拋光方法1之步驟之流程圖。 Figure 17 is a flow chart showing the steps of the polishing method 1.

圖18係顯示拋光方法2之步驟之流程圖。 Figure 18 is a flow chart showing the steps of the polishing method 2.

圖19係顯示拋光方法3之步驟之流程圖。 Figure 19 is a flow chart showing the steps of the polishing method 3.

圖20係顯示拋光方法2及拋光方法3之加工效率之圖表。 Fig. 20 is a graph showing the processing efficiency of the polishing method 2 and the polishing method 3.

用以實施發明之形態 Form for implementing the invention

1.研磨粒埋入裝置之構造 1. Structure of abrasive grain embedding device

圖1所示之研磨粒埋入裝置1中,在裝置機座2中,支持有形成圓盤狀並呈可旋轉狀態之研磨定盤3。研磨定盤3係由錫等金屬材料所形成,其下部則連結有旋轉軸31。旋轉軸31之下端連結有作為旋轉驅動機構之馬達32,而構成使研磨定盤3可為馬達32所驅動而旋轉。研磨定盤3之中心部形成有中心孔33,形成於其周圍之環部上之部分之表面(上面)30則為實際上埋入研磨粒而進行研磨之區域之使用區域34。 In the abrasive grain embedding apparatus 1 shown in Fig. 1, in the apparatus base 2, a polishing platen 3 which is formed in a disk shape and is rotatable is supported. The polishing platen 3 is formed of a metal material such as tin, and a rotating shaft 31 is coupled to the lower portion thereof. A motor 32 as a rotation drive mechanism is coupled to the lower end of the rotary shaft 31, and the polishing platen 3 is configured to be rotatable by the motor 32. A center hole 33 is formed in a central portion of the polishing platen 3, and a surface (upper surface) 30 of a portion formed on the ring portion around the periphery thereof is a use region 34 of a region where the abrasive grains are actually buried and polished.

裝置機座2之前部配設有可對研磨定盤3之表面30供給漿液40之漿液供給機構4。漿液40中可包含研磨粒40a,且,亦可不含研磨粒40a。 A slurry supply mechanism 4 for supplying the slurry 40 to the surface 30 of the polishing platen 3 is disposed in the front portion of the apparatus base 2. The slurry 40 may contain abrasive grains 40a and may also contain no abrasive particles 40a.

漿液供給機構4包含諸如用於容置包含粒徑0.02~1μm之鑽石研磨粒等之研磨粒之漿液之第1漿液槽41、可朝研磨定盤3之上面30噴出包含第1漿液槽41中所容置之研磨粒之漿液之噴嘴43a、可朝噴嘴43a供給第1漿液槽41之漿液之第1幫浦42、用於容置不含研磨粒之漿液之第2漿液槽44、可朝研磨定盤3之上面30噴出第2漿液槽44中所容置之不含研磨粒之漿液之噴嘴43b、可朝噴嘴43b供給第2漿液槽44之漿液之第2幫浦44a、可控制第1幫浦42與第2幫浦44a之作動之控制器45。因此,漿液供給機構4可對研磨定盤3之表面30選擇性地供給包含研磨粒之漿液與不包含研磨粒之漿液。 The slurry supply mechanism 4 includes a first slurry tank 41 such as a slurry for containing abrasive grains containing diamond abrasive grains having a particle diameter of 0.02 to 1 μm, and can be sprayed onto the upper surface 30 of the polishing platen 3 to include the first slurry tank 41. a nozzle 43a for arranging the slurry of the abrasive grains, a first pump 42 for supplying the slurry of the first slurry tank 41 to the nozzle 43a, and a second slurry tank 44 for accommodating the slurry containing no abrasive grains. The upper surface 30 of the polishing platen 3 discharges the nozzle 43b containing the slurry of the abrasive grains accommodated in the second slurry tank 44, and the second pump 44a capable of supplying the slurry of the second slurry tank 44 to the nozzle 43b, and the controllable portion 1 pump 42 and the second pump 44a actuated controller 45. Therefore, the slurry supply mechanism 4 can selectively supply the slurry containing the abrasive grains and the slurry containing no abrasive grains to the surface 30 of the polishing platen 3.

研磨定盤3之上方配設有可施加對研磨定盤3埋 入研磨粒所需之推壓力之推壓機構6。該推壓機構6一如圖2所示,包含用於對研磨定盤3埋入研磨粒之複數(圖示例中為3個)推壓構件60、配設於推壓構件60上方而可朝研磨定盤壓附推壓構件60之重錘構件63、可對推壓構件60施加超音波而使其振動之超音波振子65。超音波振子65則一如圖3所示,設有電極652a、652b。 Above the grinding plate 3, it can be applied to the polishing plate 3 The pressing mechanism 6 for pushing the pressing force required for the abrasive grains. As shown in FIG. 2, the pressing mechanism 6 includes a plurality of (three in the illustrated example) pressing members 60 for embedding abrasive grains in the polishing platen 3, and is disposed above the pressing member 60. The weight member 63 that presses the pressing member 60 toward the polishing platen, and the ultrasonic vibrator 65 that can vibrate the pressing member 60 to vibrate. The ultrasonic vibrator 65 is provided with electrodes 652a and 652b as shown in FIG.

如圖2所示,推壓構件60包含可藉超音波振子65而振動之振動體62。振動體62於其下部設有圓盤狀之支持部621,其上方則設有自支持部621上面朝上方延伸之大徑之下部振動體622,以及自下部振動體622上端朝上方延伸之支持軸622b。支持部621之下面則藉黏著劑而黏著有推壓作用部61。另,推壓作用部61亦可藉螺絲與固結螺帽而安裝於支持部621。 As shown in FIG. 2, the pressing member 60 includes a vibrating body 62 that can vibrate by the ultrasonic vibrator 65. The vibrating body 62 is provided with a disk-shaped supporting portion 621 at a lower portion thereof, and a large-diameter lower vibrating body 622 extending upward from the upper surface of the supporting portion 621, and a support extending upward from the upper end of the lower vibrating body 622. Shaft 622b. Below the support portion 621, a pressing action portion 61 is adhered by an adhesive. Further, the pressing action portion 61 may be attached to the support portion 621 by means of a screw and a fixing nut.

如圖2所示,下部振動體622可與形成環狀之胺甲酸乙酯製橡皮圈8嵌合,並載置於支持部621之上。另,支持軸622b則可與超音波振子65嵌合,並載置於下部振動體622上。又,超音波振子65上則在與支持軸622b嵌合之狀態下載置上部振動體66。支持軸622b上端部形成有公螺紋622c,對公螺紋622c螺合固結螺帽67而加以固結,即可將超音波振子65固定於支持軸622b上。如此,即可使推壓作用部61、下部振動體622、超音波振子65及上部振動體66形成一體而進行振動。 As shown in FIG. 2, the lower vibrating body 622 can be fitted to the ring-shaped urethane rubber band 8 and placed on the support portion 621. Further, the support shaft 622b is fitted to the ultrasonic vibrator 65 and placed on the lower vibrating body 622. Moreover, the upper vibrating body 66 is attached to the ultrasonic vibrator 65 in a state of being fitted to the support shaft 622b. The male shaft 622b is formed at the upper end portion of the support shaft 622b, and the fixed nut 67 is screwed to the male screw 622c to be fixed, so that the ultrasonic vibrator 65 can be fixed to the support shaft 622b. In this manner, the pressing action portion 61, the lower vibrating body 622, the ultrasonic vibrator 65, and the upper vibrating body 66 can be integrally formed to vibrate.

橡皮圈8具有不朝重錘構件63傳播振動體62之振動而進行絕緣之作用,而可維持振動體62之良好振動。進 而,橡皮圈8在圖1所示之研磨粒埋入裝置1中進行對研磨定盤3埋入研磨粒之作業時,可藉彈性變形而調整推壓機構6之狀態,以使形成於研磨定盤3之表面與推壓作用部61之下面之推壓面611之間之間隙在推壓面611全面上形成均一狀態。 The rubber band 8 has an effect of insulating the vibration of the vibrating body 62 without moving the weight member 63, and maintains good vibration of the vibrating body 62. Enter Further, when the rubber band 8 is subjected to the operation of embedding the abrasive grains in the polishing platen 3 in the abrasive grain embedding apparatus 1 shown in Fig. 1, the state of the pressing mechanism 6 can be adjusted by elastic deformation so as to be formed in the grinding. The gap between the surface of the platen 3 and the pressing surface 611 below the pressing action portion 61 is uniformly formed on the pressing surface 611.

如圖2所示,重錘部63上以與推壓構件60之數量相同之數量形成有用於容置推壓構件60之容置孔633。又,重錘構件63之上面之中心部突出設有用於對全部之推壓構件60連結共通之電極之電極端子安裝部634,電極端子安裝部634之外周面上則配設有2個滑環635a、635b。構成如上之電極端子安裝部634則可與圖1所示之交流電力供給機構69之旋轉連接器692嵌合。接著,則電性連接配設於電極端子安裝部634之滑環635a與635b與構成3個振動體62上分別配設之各振子65之電極652a、652b。 As shown in FIG. 2, the weight portion 63 is formed with a receiving hole 633 for accommodating the pressing member 60 in the same number as the pressing member 60. Further, an electrode terminal attaching portion 634 for connecting the common electrode to all of the pressing members 60 is protruded from the center portion of the upper surface of the weight member 63, and two slip rings are disposed on the outer peripheral surface of the electrode terminal mounting portion 634. 635a, 635b. The electrode terminal mounting portion 634 having the above configuration can be fitted to the rotary connector 692 of the AC power supply mechanism 69 shown in Fig. 1 . Next, the slip rings 635a and 635b disposed in the electrode terminal attaching portion 634 and the electrodes 652a and 652b of the vibrators 65 disposed on the three vibrating bodies 62 are electrically connected.

如圖3所示,超音波振子65係由環狀之壓電體651、分別裝設於壓電體651之兩側分極面上之環狀之電極652a、652b所構成。壓電體651係由鈦酸鋇(BaTiO3)、鋯鈦酸鉛(PB(Zi,Ti)O3)、鈮酸鋰(LiNbO3)、鉭酸鋰(LiTaO3)等壓電陶瓷所形成。 As shown in FIG. 3, the ultrasonic vibrator 65 is composed of a ring-shaped piezoelectric body 651 and annular electrodes 652a and 652b which are respectively mounted on the polarization surfaces on both sides of the piezoelectric body 651. The piezoelectric body 651 is formed of piezoelectric ceramics such as barium titanate (BaTiO 3 ), lead zirconate titanate (PB(Zi, Ti)O 3 ), lithium niobate (LiNbO 3 ), or lithium niobate (LiTaO 3 ). .

如圖4所示,構成推壓機構6之各推壓構件60中,於各推壓作用部61設有可對研磨定盤3施加推壓力之複數推壓片600。推壓片600分別以陶瓷形成圓盤狀,並固定成自推壓面611朝下方突出之狀態。複數之推壓片600形成同徑,其中心位在同一圓弧上,而以等間隔配置。 As shown in FIG. 4, in each of the pressing members 60 constituting the pressing mechanism 6, a plurality of pressing pieces 600 to which a pressing force can be applied to the polishing platen 3 are provided in each pressing action portion 61. Each of the pressing pieces 600 is formed in a disk shape by ceramics, and is fixed in a state in which it protrudes downward from the pressing surface 611. The plurality of pressing pieces 600 are formed in the same diameter, and their center positions are on the same arc and are arranged at equal intervals.

如圖1所示,研磨定盤3之後方側設有可將推壓機構6支持成可旋轉狀態之旋轉支持機構5。旋轉支持機構5包含可支持推壓機構6之支持機構,即,可朝水平方向移動而朝研磨定盤3之上方往水平方向延伸之支持桿51。 As shown in Fig. 1, a rotation support mechanism 5 capable of supporting the pressing mechanism 6 in a rotatable state is provided on the side after the polishing platen 3. The rotation support mechanism 5 includes a support mechanism that can support the pressing mechanism 6, that is, a support rod 51 that is movable in the horizontal direction and extends horizontally above the polishing platen 3.

自圖1所示之研磨粒埋入裝置1除去推壓機構6即如附圖之圖5所示,支持桿51之先端設有自支持桿51分支而互隔預定之間隔而形成之第1輥支持部511與第2輥支持部512。第1輥支持部511支持可旋轉之驅動輥52,第2輥支持部512則支持可旋轉之從動輥53。又,支持桿51並配設有用於使驅動輥52旋轉之旋轉驅動機構54。旋轉驅動機構54則由電動馬達541、包含可將電動馬達541之驅動軸與驅動輥52之旋轉軸連結成可傳動狀態之傳動帶等之傳導連結機構542所構成。 The abrasive grain embedding apparatus 1 shown in Fig. 1 removes the pressing mechanism 6 as shown in Fig. 5 of the drawings, and the tip end of the support rod 51 is provided with the first branch formed by the support rod 51 and spaced apart by a predetermined interval. The roller support portion 511 and the second roller support portion 512. The first roller support portion 511 supports the rotatable drive roller 52, and the second roller support portion 512 supports the rotatable driven roller 53. Further, the support lever 51 is provided with a rotation drive mechanism 54 for rotating the drive roller 52. The rotation drive mechanism 54 is composed of an electric motor 541 and a conduction coupling mechanism 542 including a transmission belt that can connect the drive shaft of the electric motor 541 and the rotation shaft of the drive roller 52 to a driveable state.

返回圖1繼續進行說明,則研磨粒埋入裝置1包含可對圖3所示之振子65之電極652a、652b供給交流電力之交流電力供給機構69。交流電力供給機構69可輸出諸如頻率為16~100kHz而電壓為20~200V之交流電力。該交流電力供給機構69所輸出之交流電力將經由配設於軟管691內之配線(未圖示)及配設於軟管691之先端之旋轉連接器692而自圖3所示之滑環635a、635b經配線682a、682b而朝振子65供給。 Referring back to Fig. 1, the abrasive grain embedding apparatus 1 includes an AC power supply mechanism 69 that can supply AC power to the electrodes 652a and 652b of the vibrator 65 shown in Fig. 3. The AC power supply mechanism 69 can output AC power such as a frequency of 16 to 100 kHz and a voltage of 20 to 200V. The AC power outputted by the AC power supply unit 69 is passed through a wiring (not shown) disposed in the hose 691 and a rotary connector 692 disposed at the tip end of the hose 691 from the slip ring shown in FIG. 635a and 635b are supplied to the vibrator 65 via the wirings 682a and 682b.

如圖6所示,各推壓構件60位在研磨定盤3之使用區域34之上方。即,形成在使用區域34之寬度34a之範圍內已容置全部之推壓作用部61之推壓面611之狀態。使用區域 34之寬度34a若為諸如120mm,則推壓構件60之直徑即為諸如115mm程度。又,各推壓構件60之中心則位在與重錘構件63之外徑同心之圓弧上。 As shown in FIG. 6, each of the pressing members 60 is positioned above the use area 34 of the polishing platen 3. That is, the state in which the pressing surface 611 of all the pressing action portions 61 is accommodated in the range of the width 34a of the use region 34 is formed. applied area If the width 34a of 34 is, for example, 120 mm, the diameter of the pressing member 60 is about 115 mm. Further, the center of each pressing member 60 is positioned on an arc concentric with the outer diameter of the weight member 63.

2.研磨粒埋入裝置之基本動作 2. The basic action of the abrasive grain embedding device

對定盤3埋入研磨粒時,將如圖1所示,先將構成推壓機構6之推壓構件60載置於研磨定盤3之表面30上,並使重錘構件63之外周面接觸旋轉支持機構5之驅動輥52與從動輥53。其次,再視需要而使支持桿51朝箭號X方向移動,並使推壓構件60位於使用區域34之上方。另,推壓機構6之位置亦可構成固定而不移動,此時,將適當設定推壓構件60之尺寸以避免推壓構件60超出使用區域34之範圍。 When the abrasive grains are embedded in the fixed plate 3, as shown in Fig. 1, the pressing member 60 constituting the pressing mechanism 6 is placed on the surface 30 of the polishing platen 3, and the outer peripheral surface of the weight member 63 is placed. The driving roller 52 and the driven roller 53 of the rotation support mechanism 5 are contacted. Next, the support rod 51 is moved in the direction of the arrow X as needed, and the pressing member 60 is positioned above the use area 34. Further, the position of the pressing mechanism 6 may be fixed and not moved. At this time, the size of the pressing member 60 is appropriately set to prevent the pressing member 60 from exceeding the range of the use region 34.

再,對圖3所示之電極652a、652b嵌合交流電力供給機構69之旋轉連接器692。接著,藉電動馬達32之驅動而使研磨定盤3朝圖1中箭號3a所示之方向依諸如30~60rpm之旋轉速度進行旋轉,並自漿液供給機構4朝研磨定盤3之表面30供給包含研磨粒40a之漿液40。 Further, the rotary connector 692 of the AC power supply mechanism 69 is fitted to the electrodes 652a and 652b shown in FIG. Then, by the driving of the electric motor 32, the polishing platen 3 is rotated in a direction indicated by an arrow 3a in FIG. 1 at a rotation speed of, for example, 30 to 60 rpm, and from the slurry supply mechanism 4 toward the surface 30 of the polishing platen 3. The slurry 40 containing the abrasive grains 40a is supplied.

其次,藉構成旋轉支持機構5之電動馬達541之驅動而使驅動輥52朝箭號52a所示之方向進行旋轉。如此,由於驅動輥52與重錘構件63之外周面接觸,故推壓構件60將朝箭號60a所示之方向依諸如15~30rpm之旋轉速度進行旋轉。如上所述,使研磨定盤3旋轉亦使推壓構件60旋轉,即可使供至研磨定盤3之表面30之包含研磨粒40a之漿液40進入推壓作用部61之推壓面611與研磨定盤3之表面30之間。 Next, the drive roller 52 is rotated in the direction indicated by the arrow 52a by the driving of the electric motor 541 constituting the rotation support mechanism 5. In this manner, since the driving roller 52 is in contact with the outer peripheral surface of the weight member 63, the pressing member 60 is rotated in the direction indicated by the arrow 60a at a rotation speed of, for example, 15 to 30 rpm. As described above, by rotating the polishing platen 3 and rotating the pressing member 60, the slurry 40 containing the abrasive grains 40a supplied to the surface 30 of the polishing platen 3 can be brought into the pressing surface 611 of the pressing action portion 61. The surface 30 of the stationary plate 3 is ground.

接著,自交流電力供給機構69朝構成超音波振子 65之電極652a、652b施加交流電力。如此,即可使壓電體651進行超音波振動,並使推壓作用部61朝上下方向進行超音波振動。 Next, from the AC power supply mechanism 69 to constitute an ultrasonic vibrator AC electrodes 652a, 652b apply AC power. In this manner, the piezoelectric body 651 can be subjected to ultrasonic vibration, and the pressing action portion 61 can be ultrasonically vibrated in the vertical direction.

如此而在如上述般使包含研磨粒40a之漿液40進入超音波振動之推壓構件60之推壓面611與研磨定盤3之表面30之間之狀態下,若使推壓機構6與研磨定盤3進行滑動,則漿液中包含之研磨粒40a將藉推壓構件60之推壓面611而受推壓至研磨定盤3之表面30上,以朝研磨定盤3之表面30埋入研磨粒。推壓構件60係以圓形之推壓面611之全面推壓研磨粒40a,故可有效率地朝研磨定盤3之表面30埋入研磨粒40a。 Thus, in the state where the slurry 40 containing the abrasive grains 40a enters between the pressing surface 611 of the pressing member 60 of the ultrasonic vibration and the surface 30 of the polishing platen 3 as described above, the pressing mechanism 6 and the grinding are performed. When the platen 3 is slid, the abrasive grains 40a contained in the slurry are pushed onto the surface 30 of the polishing platen 3 by the pressing surface 611 of the pressing member 60 to be embedded in the surface 30 of the polishing platen 3. Abrasive particles. Since the pressing member 60 presses the abrasive grains 40a in a full extent by the circular pressing surface 611, the abrasive grains 40a can be efficiently embedded in the surface 30 of the polishing platen 3.

圖1中箭號3a所示之研磨定盤3之旋轉方向與箭號60a所示之推壓構件60之旋轉方向係同一方向,研磨定盤3與推壓構件60之相對滑動方向則為圖7所示之箭號X’之方向。又,作為推壓面之推壓片600之下面形成圓形,故可不拘滑動位置而使與研磨定盤3之表面30之相對滑動距離為一定。因此,可不拘研磨定盤3上之位置而使產生於研磨定盤3與推壓面611之間之漿液40之壓力為一定,以抑制流體應力之不均。因此,可對研磨定盤3之表面30全體依均一之超音波強度埋入研磨粒40a,並抑制研磨粒之埋入不均。且,使用超音波,即可有效率地對表面30埋入研磨粒。 The rotation direction of the polishing plate 3 shown by the arrow 3a in Fig. 1 is the same as the direction of rotation of the pressing member 60 indicated by the arrow 60a, and the relative sliding direction of the polishing plate 3 and the pressing member 60 is as shown. The direction of the arrow X' shown in 7. Further, since the lower surface of the pressing piece 600 as the pressing surface is formed in a circular shape, the relative sliding distance from the surface 30 of the polishing platen 3 can be made constant irrespective of the sliding position. Therefore, the pressure of the slurry 40 generated between the polishing platen 3 and the pressing surface 611 can be made constant regardless of the position on the polishing plate 3 to suppress the unevenness of the fluid stress. Therefore, the entire surface 30 of the polishing platen 3 can be embedded in the abrasive grains 40a in accordance with the uniform ultrasonic intensity, and the unevenness of the abrasive grains can be suppressed. Moreover, the abrasive grains can be efficiently embedded in the surface 30 by using ultrasonic waves.

施加超音波同時朝研磨定盤3之表面30埋入研磨粒時,若如圖8所示,推壓作用部61’之推壓面611’超出研磨定盤3之範圍,則可推論超音波振動所致生之壓力分布在推 壓面611’之全面上將不均一,而於局部極端昇高壓力導致發生孔蝕,上述孔蝕則使研磨定盤3之表面30之局部受損。然而,如圖6所示,推壓構件60配置於不自研磨定盤3之使用區域34朝外周側突出之位置,故超音波振動所致生之壓力分布將均一而不致發生孔蝕,而可避免研磨定盤3之表面30受損。 When the ultrasonic wave is applied while the abrasive grains are embedded in the surface 30 of the polishing platen 3, if the pressing surface 611' of the pressing action portion 61' is beyond the range of the polishing platen 3 as shown in Fig. 8, the ultrasonic wave can be inferred. The pressure distribution caused by vibration is pushed The pressure surface 611' will be non-uniform in its entirety, and the local extreme pressure rise will cause pitting corrosion, which will locally damage the surface 30 of the polishing platen 3. However, as shown in FIG. 6, the pressing member 60 is disposed at a position that does not protrude from the use region 34 of the polishing platen 3 toward the outer peripheral side, so that the pressure distribution due to ultrasonic vibration will be uniform without causing pitting corrosion. Damage to the surface 30 of the polishing platen 3 can be avoided.

3.推壓片之變更例 3. Change example of push piece

推壓構件60中,若使各部位之滑動距離為一定,則亦可使用諸如圖9~圖11所示之推壓作用部61a~61c取代圖4及圖7所示之推壓作用部61。圖9所示之推壓作用部61a與圖4及圖7所示之例相較,係使推壓片600位在推壓面611a之更外周側,而使推壓片600之外周接觸推壓面611之外周。又,圖10所示之推壓作用部61b則構成以等間隔呈圓弧狀配置環狀之推壓片600b。各推壓片600b之中心形成圓形之溝槽601,而可降低推壓片600b之中心附近之最大壓力。進而,圖11所示之推壓作用部61c則構成使各推壓片600c包含複數之圓形小徑之推壓面602,並於其周圍形成淺槽603,而以等間隔呈圓弧狀配置上述推壓片600c。 In the pressing member 60, if the sliding distance of each portion is made constant, the pressing action portions 61a to 61c shown in Figs. 9 to 11 may be used instead of the pressing action portion 61 shown in Figs. 4 and 7 . . The pressing action portion 61a shown in Fig. 9 is such that the pressing piece 600 is positioned on the outer peripheral side of the pressing surface 611a as compared with the example shown in Figs. 4 and 7, so that the push piece 600 is pushed in the outer periphery. The pressing surface 611 is outside the circumference. Moreover, the pressing action portion 61b shown in Fig. 10 constitutes a pressing piece 600b which is annularly arranged in an arc shape at equal intervals. The center of each of the pressing pieces 600b forms a circular groove 601, and the maximum pressure near the center of the pressing piece 600b can be lowered. Further, the pressing action portion 61c shown in Fig. 11 is configured such that each pressing piece 600c includes a plurality of pressing surfaces 602 having a circular small diameter, and shallow grooves 603 are formed around the pressing pieces 600c, and are arc-shaped at equal intervals. The above-mentioned pressing piece 600c is disposed.

4.推壓機構之構造變更例 4. Structural change example of the pressing mechanism

亦可使用圖12及圖13所示之推壓機構6a而取代圖2及圖3所示之推壓機構6。上述推壓機構6a包含用於推壓已供至研磨定盤3之表面30之漿液中包含之研磨粒之推壓構件61a、用於支持推壓構件61a之支持構件70。推壓構件61a係以陶瓷形成圓盤狀者,其下面設有推壓面611a,與推壓面 611a為相反側之上面則設有安裝面612a。 Instead of the pressing mechanism 6 shown in FIGS. 2 and 3, the pressing mechanism 6a shown in FIGS. 12 and 13 can be used. The pressing mechanism 6a includes a pressing member 61a for pressing the abrasive grains contained in the slurry supplied to the surface 30 of the polishing platen 3, and a supporting member 70 for supporting the pressing member 61a. The pressing member 61a is formed into a disk shape by ceramics, and a pressing surface 611a is provided on the lower surface thereof, and the pressing surface is provided. The upper surface of the opposite side of 611a is provided with a mounting surface 612a.

推壓面611a諸如圖14所示,於二重圓弧上配置有圓盤狀之推壓片600a。推壓片600a則較推壓面611a更朝下方突出。 As shown in FIG. 14, the pressing surface 611a is provided with a disk-shaped pressing piece 600a on a double arc. The pressing piece 600a protrudes downward more than the pressing surface 611a.

如圖12所示,支持構件70包含可藉黏著劑而裝設推壓構件61a之安裝面612a之支持部71、自支持部71立設之支持軸部72。支持部71形成具有大於推壓構件61a之外徑之圓盤狀,外周部則呈圓弧狀以等間隔設有4個螺栓插嵌孔710。 As shown in FIG. 12, the support member 70 includes a support portion 71 on which the attachment surface 612a of the pressing member 61a can be attached by an adhesive, and a support shaft portion 72 that is erected from the support portion 71. The support portion 71 is formed in a disk shape having an outer diameter larger than the pressing member 61a, and the outer peripheral portion has an arc shape and four bolt insertion holes 710 are provided at equal intervals.

支持軸部72則包含自支持部71上面朝上方延伸之大徑之重錘構件滑動嵌合部720、自重錘構件滑動嵌合部720之上端朝上方延伸而直徑小於重錘構件滑動嵌合部720之振子安裝部721、形成直徑小於振子安裝部721而自振子安裝部721之上端朝上方延伸之電極端子安裝部722。 The support shaft portion 72 includes a weight member sliding fitting portion 720 having a large diameter extending upward from the upper surface of the support portion 71, and an upper end of the weight member sliding fitting portion 720 extending upward and having a smaller diameter than the weight member sliding fitting portion. The vibrator mounting portion 721 of the 720 is formed with an electrode terminal attaching portion 722 having a diameter smaller than the vibrator mounting portion 721 and extending upward from the upper end of the vibrator mounting portion 721.

重錘構件滑動嵌合部720之外周側可滑動嵌合以不銹鋼等金屬材料形成環狀之重錘構件73。重錘構件73於中央部形成有可與重錘構件滑動嵌合部720滑動嵌合之滑動嵌合孔730,其下面則在對應設於支持部71之4個螺栓插嵌孔710之位置上形成有4個母螺紋孔731。構成如上之重錘構件73可使滑動嵌合孔730與重錘構件滑動嵌合部720滑動嵌合而載置於支持部71之上面,並自支持部71之下側朝螺栓插嵌孔710插嵌固結螺栓64而與母螺紋孔731進行螺合,以裝設於支持部71上。 The weight member sliding fitting portion 720 is slidably fitted to the outer peripheral side to form a ring-shaped weight member 73 by a metal material such as stainless steel. The weight member 73 is formed with a slide fitting hole 730 that is slidably fitted to the weight member sliding fitting portion 720 at the center portion, and the lower surface thereof is located at a position corresponding to the four bolt insertion holes 710 provided in the support portion 71. Four female screw holes 731 are formed. The weight member 73 is configured such that the slide fitting hole 730 is slidably fitted to the weight member sliding fitting portion 720 and placed on the upper surface of the support portion 71, and is directed from the lower side of the support portion 71 toward the bolt insertion hole 710. The fixing bolt 64 is inserted and screwed into the female screw hole 731 to be attached to the support portion 71.

支持部71之振子安裝部721則可插入超音波振子 65。超音波振子65則由環狀之壓電體651、分別裝設於壓電體651之兩側分極面上之環狀之電極652a、652b所構成。壓電體651係由鈦酸鋇(BaTiO3)、鋯鈦酸鉛(PB(Zi,Ti)O3)、鈮酸鋰(LiNbO3)、鉭酸鋰(LiTaO3)等壓電陶瓷所形成。構成如上之超音波振子65可與支持軸部72之振子安裝部721嵌合,並載置於重錘構件滑動嵌合部720之上面。如此而載置於重錘構件滑動嵌合部720上面之超音波振子65上將再載置與振子安裝部721嵌合之環狀之間隔件66。其次,對形成於振子安裝部721之上端部之公螺紋部723螺合固結螺帽67,即可對振子安裝部721裝設超音波振子65。 The vibrator mounting portion 721 of the support portion 71 can be inserted into the ultrasonic vibrator 65. The ultrasonic vibrator 65 is composed of a ring-shaped piezoelectric body 651 and annular electrodes 652a and 652b which are respectively mounted on the split surface of the piezoelectric body 651. The piezoelectric body 651 is formed of piezoelectric ceramics such as barium titanate (BaTiO 3 ), lead zirconate titanate (PB(Zi, Ti)O 3 ), lithium niobate (LiNbO 3 ), or lithium niobate (LiTaO 3 ). . The ultrasonic vibrator 65 configured as described above can be fitted to the vibrator mounting portion 721 of the support shaft portion 72 and placed on the upper surface of the weight member sliding fitting portion 720. In this way, the ultrasonic vibrator 65 placed on the upper surface of the weight member sliding fitting portion 720 is placed on the annular spacer 66 fitted to the vibrator mounting portion 721. Next, the consolidating nut 67 is screwed to the male screw portion 723 formed at the upper end portion of the vibrator mounting portion 721, whereby the vibrator mounting portion 721 can be provided with the ultrasonic vibrator 65.

如圖13所示,電極端子安裝部722之外周配設有2個滑環681a、681b。上述滑環681a、681b則經配線682a與682b而與構成超音波振子65之電極652a、652b連接。 As shown in FIG. 13, two slip rings 681a and 681b are disposed on the outer circumference of the electrode terminal mounting portion 722. The slip rings 681a and 681b are connected to the electrodes 652a and 652b constituting the ultrasonic vibrator 65 via the wirings 682a and 682b.

圖12及圖13所示之推壓機構6a亦如圖14所示,將推壓片600a之下面形成圓形,故可不拘滑動位置而使與研磨定盤3之滑動距離為一定。因此,可不拘研磨定盤3上之位置,而使產生於研磨定盤3與推壓構件61a之間之漿液40之壓力為一定,以對研磨定盤3之表面30全體依均一之超音波強度埋入研磨粒40a。 As shown in Fig. 14, the pressing mechanism 6a shown in Figs. 12 and 13 has a circular shape on the lower surface of the pressing piece 600a. Therefore, the sliding distance from the polishing platen 3 can be made constant regardless of the sliding position. Therefore, the pressure of the slurry 40 generated between the polishing platen 3 and the pressing member 61a can be made constant regardless of the position on the polishing plate 3, so that the entire surface 30 of the polishing platen 3 is uniformly supersonic. The abrasive grains 40a are embedded in strength.

又,如圖15所示,全部之推壓片600a均位在定盤3之使用區域34之內側,故可使超音波振動所致生之壓力分布均一,而不致發生孔蝕,以避免研磨定盤3之表面30a受損。 Moreover, as shown in FIG. 15, all of the pressing pieces 600a are positioned inside the use area 34 of the fixed plate 3, so that the pressure distribution caused by the ultrasonic vibration can be uniform, and no pitting occurs to avoid grinding. The surface 30a of the platen 3 is damaged.

5.包含研磨粒埋入裝置之拋光裝置 5. Polishing device comprising abrasive particle embedding device

圖16所示之拋光裝置9係對圖1所示之研磨粒埋入裝置1附加有被加工物保持機構90者,而可對研磨定盤3埋入研磨粒,並藉研磨定盤3而進行被加工物之研磨(拋光)。另,拋光裝置9中構成與圖1所示之研磨粒埋入裝置1相同之部位附以與圖1相同之標號,並省略其詳細說明。 The polishing apparatus 9 shown in Fig. 16 is provided with the workpiece holding mechanism 90 attached to the abrasive grain embedding apparatus 1 shown in Fig. 1, and the abrasive grains can be embedded in the polishing platen 3, and the polishing plate 3 can be used. Grinding (polishing) of the workpiece is performed. In the polishing apparatus 9, the same components as those of the abrasive grain embedding apparatus 1 shown in Fig. 1 are assigned the same reference numerals as in Fig. 1, and the detailed description thereof will be omitted.

被加工物保持機構90包含形成圓柱狀之保持構件91。保持構件91之下面則設有用於保持被加工物之保持面91a。保持面91a與研磨定盤3之研磨面之表面30相對,而可在與研磨定盤3之表面30抵接之狀態下保持已為保持面91a所保持之被加工物。 The workpiece holding mechanism 90 includes a holding member 91 that is formed in a cylindrical shape. A holding surface 91a for holding a workpiece is provided on the lower surface of the holding member 91. The holding surface 91a faces the surface 30 of the polishing surface of the polishing platen 3, and the workpiece held by the holding surface 91a can be held while being in contact with the surface 30 of the polishing platen 3.

被加工物保持機構90並包含可朝水平方向移動之支持桿92。支持桿92之先端則設有自支持桿92分支而互隔預定之間隔而形成之第1輥支持部921與第2輥支持部922。第1輥支持部921支持可旋轉之驅動輥93,第2輥支持部922則支持可旋轉之從動輥(未圖示)。又,支持桿92並配設有用於使驅動輥93旋轉之旋轉驅動機構94。旋轉驅動機構94則由電動馬達941、包含可將電動馬達941之驅動軸與驅動輥93之旋轉軸連結成可傳動狀態之傳動帶等之傳導連結機構942所構成。 The workpiece holding mechanism 90 includes a support rod 92 that is movable in the horizontal direction. The tip end of the support rod 92 is provided with a first roller support portion 921 and a second roller support portion 922 which are branched from the support rod 92 and are spaced apart from each other by a predetermined interval. The first roller support portion 921 supports the rotatable drive roller 93, and the second roller support portion 922 supports a rotatable driven roller (not shown). Further, the support lever 92 is provided with a rotation drive mechanism 94 for rotating the drive roller 93. The rotation drive mechanism 94 is composed of an electric motor 941 and a conduction coupling mechanism 942 including a transmission belt that can connect the drive shaft of the electric motor 941 and the rotation shaft of the drive roller 93 to a driveable state.

6.被加工物之拋光 6. Polishing of processed objects

以下,說明使用圖16所示之拋光裝置9而拋光被加工物時之拋光裝置9之動作。被加工物之拋光時,將於被加工物保持機構90之保持面91a上保持被加工物,諸如晶圓W。此時,係使晶圓W之被研磨面與研磨定盤3之表面30相對。其 次,使構成被加工物保持機構90之保持構件91之外周面接觸驅動輥93與從動軸,並使支持桿92朝箭號X所示方向移動,而使晶圓W定位於研磨定盤3之使用區域34之上方。 Hereinafter, the operation of the polishing apparatus 9 when the workpiece is polished using the polishing apparatus 9 shown in Fig. 16 will be described. When the workpiece is polished, the workpiece, such as the wafer W, is held on the holding surface 91a of the workpiece holding mechanism 90. At this time, the surface to be polished of the wafer W is opposed to the surface 30 of the polishing platen 3. its Then, the outer peripheral surface of the holding member 91 constituting the workpiece holding mechanism 90 is brought into contact with the driving roller 93 and the driven shaft, and the support rod 92 is moved in the direction indicated by the arrow X to position the wafer W on the polishing platen. 3 is above the use area 34.

如此,一旦定位晶圓W,並使被加工物保持機構90為驅動輥93與從動軸所支持,則自漿液供給機構4朝研磨定盤3之表面30與晶圓W之間供給漿液,同時藉電動馬達32使定盤3朝箭號3a所示之方向進行旋轉,並藉電動馬達941使驅動輥93旋轉而使保持構件91朝箭號91b所示之方向進行旋轉。如此,裝設於保持構件91下面之晶圓W之被研磨面之下面即可藉已埋入定盤3之表面30之研磨粒40a及漿液而進行研磨。 In this manner, once the wafer W is positioned and the workpiece holding mechanism 90 is supported by the driving roller 93 and the driven shaft, the slurry is supplied from the slurry supply mechanism 4 to the surface 30 of the polishing platen 3 and the wafer W. At the same time, the fixed motor 3 is rotated by the electric motor 32 in the direction indicated by the arrow 3a, and the driving roller 93 is rotated by the electric motor 941 to rotate the holding member 91 in the direction indicated by the arrow 91b. Thus, the abrasive particles 40a and the slurry which have been embedded in the surface 30 of the fixed plate 3 are polished under the surface to be polished of the wafer W disposed under the holding member 91.

拋光裝置9中,可視目的不同而分別使用包含研磨粒40a之漿液與不含研磨粒40a之漿液。舉例言之,可藉漿液供給機構4之控制器45而使第1幫浦42或第2幫浦44a之任一作動,以控制供至研磨定盤之上面30之漿液中是否包含研磨粒40a。以下,即就使用拋光裝置9而進行拋光之步驟之例參照圖17~圖19之流程圖加以說明。 In the polishing apparatus 9, a slurry containing the abrasive grains 40a and a slurry containing no abrasive grains 40a are used depending on the purpose. For example, any of the first pump 42 or the second pump 44a may be actuated by the controller 45 of the slurry supply mechanism 4 to control whether the slurry supplied to the upper surface 30 of the polishing plate contains abrasive particles 40a. . Hereinafter, an example of a step of polishing using the polishing apparatus 9 will be described with reference to the flowcharts of FIGS. 17 to 19.

(1)拋光方法1 (1) Polishing method 1

如圖17所示,首先,對研磨定盤3之表面30埋入研磨粒(步驟S11)。步驟S11中,係將推壓構件60載置於研磨定盤3之表面30上,並藉旋轉支持機構5支持推壓機構6。另,被加工物保持機構90則先卸除保持構件91。 As shown in Fig. 17, first, abrasive grains are embedded in the surface 30 of the polishing platen 3 (step S11). In step S11, the pressing member 60 is placed on the surface 30 of the polishing platen 3, and the pressing mechanism 6 is supported by the rotation support mechanism 5. Further, the workpiece holding mechanism 90 first removes the holding member 91.

然後,使研磨定盤3朝箭號3a所示之方向進行旋轉,並自漿液供給機構4朝研磨定盤3之表面30供給包含研 磨粒40a(游離研磨粒)之漿液40,且,使驅動輥52朝箭號52a所示之方向進行旋轉,並使推壓構件60朝箭號60a所示之方向進行旋轉。再,自交流電力供給機構69施加交流電力,而使推壓作用部61進行超音波振動。如此,即可使包含研磨粒40a之漿液40進入推壓構件60之推壓面611與研磨定盤3之表面30之間,而朝研磨定盤3之表面30埋入研磨粒40a。另,漿液40係使用諸如烴油、乙二醇等。 Then, the polishing platen 3 is rotated in the direction indicated by the arrow 3a, and supplied to the surface 30 of the polishing platen 3 from the slurry supply mechanism 4 The slurry 40 of the abrasive grains 40a (free abrasive grains) is rotated in the direction indicated by the arrow 52a, and the pressing member 60 is rotated in the direction indicated by the arrow 60a. Further, the AC power is applied from the AC power supply means 69, and the pressing action portion 61 is subjected to ultrasonic vibration. Thus, the slurry 40 containing the abrasive grains 40a can be brought between the pressing surface 611 of the pressing member 60 and the surface 30 of the polishing platen 3, and the abrasive grains 40a can be embedded in the surface 30 of the polishing platen 3. Further, the slurry 40 is used such as a hydrocarbon oil, ethylene glycol or the like.

一如前述,作為推壓面之推壓片600之下面形成圓形,而可使產生於研磨定盤3與推壓作用部61之間之漿液40之壓力為一定,故可抑制研磨粒之埋入不均。 As described above, the lower surface of the pressing piece 600 as the pressing surface forms a circular shape, and the pressure of the slurry 40 generated between the polishing platen 3 and the pressing action portion 61 can be made constant, so that the abrasive grains can be suppressed. Buried unevenly.

其次,為去除殘留於研磨定盤3上之漿液40、研磨粒40a及漿液40中包含之淤渣(定盤3及推壓片600等之加工粉),可諸如藉使研磨定盤3旋轉同時自未圖示之噴嘴噴出高壓之清洗液而清洗研磨定盤3。然後,使研磨定盤3旋轉同時自未圖示之噴嘴朝研磨定盤3噴出高壓氣體以進行乾燥處理(步驟S12)。 Next, in order to remove the slurry 40, the abrasive grains 40a, and the sludge contained in the slurry 40 (the processing powder of the fixing plate 3 and the pressing piece 600, etc.) remaining on the polishing platen 3, for example, by rotating the polishing plate 3 At the same time, the high-pressure cleaning liquid is ejected from a nozzle (not shown) to clean the polishing platen 3. Then, the polishing platen 3 is rotated while discharging high-pressure gas from the nozzle (not shown) toward the polishing platen 3 to perform drying processing (step S12).

如此,即可在已對研磨定盤3之表面30埋入研磨粒並清洗表面30後之狀態下,進行被加工物之拋光(步驟S13)。拋光時,一如圖16所示,係於保持構件91之保持面91a上保持被加工物,諸如晶圓W。其次,使保持構件91接觸驅動輥93與從動輥而為其等所支持,再將晶圓W載置於研磨定盤3之表面30上,並視需要而使驅動輥93朝X方向移動,以將晶圓W定位於研磨定盤3之表面30之使用區域34內。 In this manner, polishing of the workpiece can be performed in a state where the abrasive grains have been buried on the surface 30 of the polishing platen 3 and the surface 30 is cleaned (step S13). At the time of polishing, as shown in Fig. 16, the workpiece, such as the wafer W, is held on the holding surface 91a of the holding member 91. Next, the holding member 91 is brought into contact with the driving roller 93 and the driven roller to be supported by the same, and the wafer W is placed on the surface 30 of the polishing platen 3, and the driving roller 93 is moved in the X direction as needed. The wafer W is positioned within the use area 34 of the surface 30 of the polishing platen 3.

如此,一旦將晶圓W載置於研磨定盤3之使用區 域34上,即自漿液供給機構4朝研磨定盤3之表面30與晶圓W之間供給不含研磨粒之漿液而進行拋光。藉步驟S12之清洗,即可去除步驟S11中使用之研磨定盤3之表面30上殘留之研磨粒(游離研磨粒),故研磨時將不致產生游離研磨粒所造成之刮痕等研磨痕而可獲致良好之加工面,並提昇晶圓W之表面粗度。 Thus, once the wafer W is placed in the use area of the polishing platen 3 In the field 34, polishing is carried out by supplying a slurry containing no abrasive particles from the slurry supply mechanism 4 to the surface 30 of the polishing platen 3 and the wafer W. By the cleaning of step S12, the abrasive grains (free abrasive grains) remaining on the surface 30 of the polishing platen 3 used in the step S11 can be removed, so that the polishing marks such as scratches caused by the free abrasive grains are not generated during the polishing. A good processing surface can be obtained and the surface roughness of the wafer W can be improved.

(2)拋光方法2 (2) Polishing method 2

如圖18所示,初始係使用包含研磨粒之漿液而進行晶圓之拋光。首先,如圖16所示,藉旋轉支持機構5保持推壓機構67,並於被加工物保持機構90中保持已保持晶圓W之保持構件91,再將推壓機構6及晶圓W載置於研磨定盤3之使用區域34上。 As shown in Fig. 18, the polishing of the wafer was carried out initially using a slurry containing abrasive grains. First, as shown in FIG. 16, the pressing mechanism 67 is held by the rotation support mechanism 5, and the holding member 91 holding the wafer W is held in the workpiece holding mechanism 90, and the pressing mechanism 6 and the wafer W are carried. It is placed on the use area 34 of the polishing platen 3.

其次,使研磨定盤3朝圖16所示之箭號3a方向旋轉,並使推壓機構6朝箭號60a方向旋轉,且使保持構件91朝箭號91b方向旋轉,並使研磨定盤3之表面30與推壓構件60之推壓面611進行滑動,且使上述表面30與晶圓W進行滑動。此時,將自交流電力供給機構69施加交流電力而使推壓作用部61進行超音波振動。又,自漿液供給機構4朝研磨定盤3之表面30與晶圓W之間,以及上述表面30與推壓機構6之推壓面611之間供給包含研磨粒40a(游離研磨粒)之漿液。如此,即可藉已埋入研磨定盤3之表面30之研磨粒及漿液供給機構4所供給之研磨粒(游離研磨粒)而拋光晶圓W,並藉推壓機構6推壓游離研磨粒而加以埋入研磨定盤3之表面30中(步驟S21,第1拋光製程)。 Next, the polishing table 3 is rotated in the direction of the arrow 3a shown in Fig. 16, and the pressing mechanism 6 is rotated in the direction of the arrow 60a, and the holding member 91 is rotated in the direction of the arrow 91b, and the polishing plate 3 is made. The surface 30 slides with the pressing surface 611 of the pressing member 60, and slides the surface 30 and the wafer W. At this time, the AC power is applied from the AC power supply means 69, and the pressing action portion 61 is subjected to ultrasonic vibration. Further, the slurry supply mechanism 4 supplies a slurry containing the abrasive grains 40a (free abrasive grains) between the surface 30 of the polishing platen 3 and the wafer W, and between the surface 30 and the pressing surface 611 of the pressing mechanism 6. . Thus, the wafer W can be polished by the abrasive grains embedded in the surface 30 of the polishing platen 3 and the abrasive grains (free abrasive grains) supplied from the slurry supply mechanism 4, and the free abrasive grains can be pushed by the pressing mechanism 6. It is buried in the surface 30 of the polishing platen 3 (step S21, the first polishing process).

其次,自漿液供給機構4朝研磨定盤3之表面30與晶圓W之間供給不含研磨粒40a之漿液,並使旋轉之表面30與旋轉之晶圓W進行滑動而進行晶圓W之研磨。此時,亦可自交流電力供給機構69施加交流電力而使推壓作用部61進行超音波振動,或不進行超音波振動。如此,即可藉步驟S21所使用之研磨定盤3之表面30上殘留之游離研磨粒及已埋入研磨定盤3之表面30之研磨粒(固定研磨粒)而進行研磨,故與藉清洗而去除游離研磨粒之上述拋光方法1相較,可提昇研磨效率(步驟S22,第2拋光製程)。 Next, the slurry supply mechanism 4 supplies the slurry containing no abrasive grains 40a between the surface 30 of the polishing platen 3 and the wafer W, and slides the rotating surface 30 and the rotating wafer W to perform the wafer W. Grinding. At this time, the AC power may be applied from the AC power supply means 69, and the pressing action portion 61 may be subjected to ultrasonic vibration or ultrasonic vibration. Thus, the free abrasive grains remaining on the surface 30 of the polishing platen 3 used in the step S21 and the abrasive grains (fixed abrasive grains) embedded in the surface 30 of the polishing platen 3 can be ground. On the other hand, the polishing method 1 for removing the free abrasive grains can improve the polishing efficiency (step S22, second polishing process).

上述方法係隨後進行CMP(Chemical Mechanical Polishing)等進一步之修整製程時或採用僅以前述研磨粒進行拋光之方法等不要求晶圓之較高品質時甚為有效之方法,可縮短CMP之加工時間,即便不追加以較小研磨粒進行拋光之製程,亦可獲致品質高於游離研磨粒之研磨之加工面,而具備可降低製程成本之優點。 The above method is a method which is effective when a further finishing process such as CMP (Chemical Mechanical Polishing) or a polishing method using only the above-mentioned abrasive grains is not required, and the processing time of the CMP can be shortened. Even if the polishing process with smaller abrasive grains is not added, the processed surface with higher quality than the free abrasive grains can be obtained, and the process cost can be reduced.

(3)拋光方法3 (3) Polishing method 3

上述拋光方法2中,在步驟S22中藉游離研磨粒進行研磨,故可能於晶圓W之加工面上發生游離研磨粒所導致之損傷或損壞。因此,為減少上述損傷或損壞,而如圖19所示,在藉包含研磨粒之漿液進行之拋光(步驟S31,第1拋光製程)與藉不含研磨粒之漿液進行之拋光(步驟S33,第2拋光製程)之間,進行清洗研磨定盤3之表面30之清潔(步驟S32)。清潔步驟可採用朝研磨定盤3之表面30噴附不含研磨粒之液體之方法、朝研磨定盤3之表面30壓附擦布或多孔物 質之研磨墊之方法、藉橡膠製之刮刷器將殘留物排除至研磨定盤3之外之方法等,可對應所需之品質而加以選擇。一旦實施清潔,則可促進游離研磨粒之排出,故步驟S33之研磨效率雖低於步驟S22,但可提昇晶圓W之加工品質。另,步驟S31係藉與步驟S21相同之方法而執行,步驟S33則藉與步驟S22相同之方法而執行。 In the above polishing method 2, the polishing is performed by the free abrasive grains in step S22, so that damage or damage caused by the free abrasive grains may occur on the processed surface of the wafer W. Therefore, in order to reduce the above damage or damage, as shown in FIG. 19, polishing by the slurry containing the abrasive grains (step S31, the first polishing process) and polishing by the slurry containing no abrasive grains (step S33, Between the second polishing process, cleaning of the surface 30 of the cleaning polishing plate 3 is performed (step S32). The cleaning step may employ a method of spraying a liquid containing no abrasive particles toward the surface 30 of the polishing platen 3, and pressing the cloth or the porous material toward the surface 30 of the polishing platen 3. The method of polishing the pad, the method of removing the residue from the polishing plate 3 by a rubber wiper, etc., can be selected according to the desired quality. Once the cleaning is performed, the discharge of the free abrasive grains can be promoted. Therefore, the polishing efficiency in the step S33 is lower than that in the step S22, but the processing quality of the wafer W can be improved. Further, step S31 is executed in the same manner as step S21, and step S33 is executed in the same manner as step S22.

如上所述,拋光方法2及拋光方法3中,在供給不含研磨粒之漿液而進行之拋光時可抑制加工效率之降低,故可藉不受游離研磨粒之影響之加工而去除之部分之體積將增加。即,使用游離研磨粒之拋光時之研磨痕可被去除之面積將增加。因此,可就晶圓形狀之被加工物增大其直徑。尤其,進行藍寶石、SiC(碳化矽)、GaN(氮化鎵)、AlN(氮化鋁)等硬質基板之拋光時效果更佳。 As described above, in the polishing method 2 and the polishing method 3, when polishing is performed by supplying a slurry containing no abrasive grains, the reduction in processing efficiency can be suppressed, so that it can be removed by processing which is not affected by the free abrasive grains. The volume will increase. That is, the area where the polishing marks can be removed when polishing using the free abrasive grains will increase. Therefore, the diameter of the workpiece in the shape of the wafer can be increased. In particular, it is more effective in polishing a hard substrate such as sapphire, SiC (gallium carbide), GaN (gallium nitride), or AlN (aluminum nitride).

【第1實施例】 [First Embodiment]

就磁頭所使用之AlTiC(氧化鋁-碳化鈦陶瓷)之塊體使用本發明之拋光裝置9而藉上述拋光方法2與拋光方法3予以拋光加工後,以及使用不具研磨粒埋入功能之一般拋光裝置而與上述拋光方法2與拋光方法3同樣地在藉包含研磨粒之漿液進行拋光後再藉不含研磨粒之漿液進行拋光後之研磨效率,已顯示於圖20。 For the block of AlTiC (alumina-titanium carbide ceramic) used for the magnetic head, the polishing apparatus 9 of the present invention is used for polishing by the above-described polishing method 2 and polishing method 3, and general polishing using a function of embedding without abrasive grains is used. In the same manner as the polishing method 2 and the polishing method 3 described above, the polishing efficiency after polishing by the slurry containing the abrasive grains and polishing by the slurry containing no abrasive grains is shown in Fig. 20 .

可知拋光方法2、3均在使用本發明之拋光裝置9時與使用一般之拋光裝置時相較,研磨效率較高。此可推論係因具備研磨粒埋入功能之拋光裝置9可在使用游離研磨粒之拋光時朝研磨定盤3之表面30埋入研磨粒,而可提昇 不使用研磨粒之拋光之效率之故。 It can be seen that both of the polishing methods 2 and 3 have higher polishing efficiency when using the polishing apparatus 9 of the present invention than when using a general polishing apparatus. It can be inferred that the polishing device 9 having the abrasive grain embedding function can embed the abrasive grains on the surface 30 of the polishing platen 3 when polishing with the free abrasive grains, and can be lifted. The efficiency of polishing of the abrasive grains is not used.

又,比較拋光方法2與拋光方法3,則可知使用任一裝置時均係拋光方法2之研磨效率高於拋光方法3。此可推論係因拋光方法3進行清潔而去除游離研磨粒之比例較高,故其研磨效率亦相應而降低之故。 Further, comparing the polishing method 2 and the polishing method 3, it is understood that the polishing efficiency of the polishing method 2 is higher than that of the polishing method 3 when either device is used. It can be inferred that the ratio of removing the free abrasive grains by the polishing method 3 is high, so that the polishing efficiency is correspondingly lowered.

進而,亦已確認4種方法中,使用本發明之拋光裝置9而藉拋光方法2進行拋光者,乃研磨效率最高者。 Further, among the four methods, it has been confirmed that the polishing apparatus 9 of the present invention is used for polishing by the polishing method 2, and the polishing efficiency is the highest.

1‧‧‧研磨粒埋入裝置 1‧‧‧Abrasive grain embedding device

2‧‧‧裝置機座 2‧‧‧ device base

3‧‧‧研磨定盤 3‧‧‧ Grinding plate

3a、52a、60a、91b、X、X’‧‧‧箭號 3a, 52a, 60a, 91b, X, X’‧‧‧ arrows

4‧‧‧漿液供給機構 4‧‧‧Slurry supply mechanism

5‧‧‧旋轉支持機構 5‧‧‧Rotary support organization

6、6a‧‧‧推壓機構 6, 6a‧‧‧ Pushing mechanism

8‧‧‧橡皮圈 8‧‧‧ Rubber band

9‧‧‧拋光裝置 9‧‧‧ polishing device

30、30a‧‧‧表面 30, 30a‧‧‧ surface

31‧‧‧旋轉軸 31‧‧‧Rotary axis

32‧‧‧電動馬達 32‧‧‧Electric motor

33‧‧‧中心孔 33‧‧‧ center hole

34‧‧‧使用區域 34‧‧‧Use area

34a‧‧‧寬度 34a‧‧‧Width

40‧‧‧漿液 40‧‧‧Slurry

40a‧‧‧研磨粒 40a‧‧‧Abrasive grain

41‧‧‧第1漿液槽 41‧‧‧1st slurry tank

42‧‧‧第1幫浦 42‧‧‧1st pump

43a、43b‧‧‧噴嘴 43a, 43b‧‧‧ nozzle

44‧‧‧第2漿液槽 44‧‧‧Second slurry tank

44a‧‧‧第2幫浦 44a‧‧‧2nd pump

45‧‧‧控制器 45‧‧‧ Controller

51‧‧‧支持桿 51‧‧‧Support rod

52、93‧‧‧驅動輥 52, 93‧‧‧ drive roller

53‧‧‧從動輥 53‧‧‧ driven roller

54‧‧‧旋轉驅動機構 54‧‧‧Rotary drive mechanism

60、61a‧‧‧推壓構件 60, 61a‧‧‧ Pushing members

61、61’、61a~61c‧‧‧推壓作用部 61, 61', 61a~61c‧‧‧ pushing action

62‧‧‧振動體 62‧‧‧ vibrating body

63、73‧‧‧重錘構件 63, 73‧‧‧heavy hammer components

64‧‧‧固結螺栓 64‧‧‧Consolidated bolts

65‧‧‧超音波振子 65‧‧‧Supersonic vibrator

66‧‧‧上部振動體、間隔件 66‧‧‧Upper vibrating body, spacer

67‧‧‧固結螺帽、推壓機構 67‧‧‧Consolidated nut and pushing mechanism

69‧‧‧交流電力供給機構 69‧‧‧AC power supply agency

70‧‧‧支持構件 70‧‧‧Support components

71、621‧‧‧支持部 71, 621‧‧‧ Support Department

72‧‧‧支持軸部 72‧‧‧Support shaft

90‧‧‧被加工物保持機構 90‧‧‧Processed object retention mechanism

91‧‧‧保持構件 91‧‧‧ Keeping components

91a‧‧‧保持面 91a‧‧‧ Keep face

92‧‧‧支持桿 92‧‧‧Support rod

94‧‧‧旋轉驅動機構 94‧‧‧Rotary drive mechanism

511、921‧‧‧第1輥支持部 511, 921‧‧‧1st roller support

512、922‧‧‧第2輥支持部 512, 922‧‧‧2nd roller support

541‧‧‧電動馬達 541‧‧‧Electric motor

542‧‧‧傳導連結機構 542‧‧‧Transduction link mechanism

600、600a、600b、600c‧‧‧推壓片 600, 600a, 600b, 600c‧‧‧ push tablets

601‧‧‧溝槽 601‧‧‧ trench

602、611、611’、611a‧‧‧推壓面 602, 611, 611', 611a‧‧‧ push surface

603‧‧‧淺槽 603‧‧‧ shallow groove

612a‧‧‧安裝面 612a‧‧‧Installation surface

622‧‧‧下部振動體 622‧‧‧lower vibrating body

622b‧‧‧支持軸 622b‧‧‧Support shaft

622c‧‧‧公螺紋 622c‧‧‧ male thread

633‧‧‧容置孔 633‧‧‧ accommodating holes

634‧‧‧電極端子安裝部 634‧‧‧Electrode terminal mounting

635a、635b、681a、681b‧‧‧滑環 635a, 635b, 681a, 681b‧‧‧ slip rings

651‧‧‧壓電體 651‧‧‧piezoelectric body

652a、652b‧‧‧電極 652a, 652b‧‧‧ electrodes

682a、682b‧‧‧配線 682a, 682b‧‧‧ wiring

691‧‧‧軟管 691‧‧‧Hose

692‧‧‧旋轉連接器 692‧‧‧Rotary connector

710‧‧‧螺栓插嵌孔 710‧‧‧Bolt insert hole

720‧‧‧重錘構件滑動嵌合部 720‧‧‧heavy hammer member sliding fitting

721‧‧‧振子安裝部 721‧‧‧ vibrator installation department

722‧‧‧電極端子安裝部 722‧‧‧Electrode terminal mounting

723‧‧‧公螺紋部 723‧‧‧ Male thread

730‧‧‧滑動嵌合孔 730‧‧‧Sliding fitting hole

731‧‧‧母螺紋孔 731‧‧‧Female threaded holes

941‧‧‧電動馬達 941‧‧‧Electric motor

942‧‧‧傳導連結機構 942‧‧‧Transmission link mechanism

S11~S33‧‧‧流程步驟 S11~S33‧‧‧ Process steps

W‧‧‧晶圓 W‧‧‧ wafer

圖1係例示研磨粒埋入裝置之立體圖。 Fig. 1 is a perspective view showing an abrasive particle embedding device.

圖2係顯示推壓機構之第1例之分解立體圖。 Fig. 2 is an exploded perspective view showing a first example of the pressing mechanism.

圖3係顯示推壓機構之第1例之截面圖。 Fig. 3 is a cross-sectional view showing a first example of the pressing mechanism.

圖4係例示推壓機構所包含之推壓片之底面圖。 Fig. 4 is a bottom view showing a pressing piece included in the pressing mechanism.

圖5係例示構成研磨粒埋入裝置之旋轉支持機構之立體圖。 Fig. 5 is a perspective view showing a rotation support mechanism constituting the abrasive grain embedding device.

圖6係顯示推壓構件與研磨定盤之位置及大小之關係之說明圖。 Fig. 6 is an explanatory view showing the relationship between the pressing member and the position and size of the polishing platen.

圖7係顯示研磨粒埋入時之推壓機構與研磨定盤之相對滑動方向之說明圖。 Fig. 7 is an explanatory view showing the relative sliding direction of the pressing mechanism and the polishing platen when the abrasive grains are buried.

圖8係顯示習知之推壓機構與研磨定盤之位置及大小之關係之說明圖。 Fig. 8 is an explanatory view showing the relationship between the conventional pressing mechanism and the position and size of the polishing platen.

圖9係顯示推壓片之第2例之底面圖。 Fig. 9 is a bottom plan view showing a second example of the pressing piece.

圖10係顯示推壓片之第3例之底面圖。 Fig. 10 is a bottom plan view showing a third example of the pressing piece.

圖11係顯示推壓片之第4例之底面圖。 Fig. 11 is a bottom plan view showing a fourth example of the pressing piece.

圖12係顯示推壓機構之第2例之分解立體圖。 Fig. 12 is an exploded perspective view showing a second example of the pressing mechanism.

圖13係顯示推壓機構之第2例之截面圖。 Fig. 13 is a cross-sectional view showing a second example of the pressing mechanism.

圖14係例示構成推壓機構之第2例之推壓構件之底面圖。 Fig. 14 is a bottom view showing a pressing member of a second example constituting the pressing mechanism.

圖15係顯示推壓構件與研磨定盤之位置及大小之關係之說明圖。 Fig. 15 is an explanatory view showing the relationship between the pressing member and the position and size of the polishing platen.

圖16係例示拋光裝置之立體圖。 Fig. 16 is a perspective view showing a polishing apparatus.

圖17係顯示拋光方法1之步驟之流程圖。 Figure 17 is a flow chart showing the steps of the polishing method 1.

圖18係顯示拋光方法2之步驟之流程圖。 Figure 18 is a flow chart showing the steps of the polishing method 2.

圖19係顯示拋光方法3之步驟之流程圖。 Figure 19 is a flow chart showing the steps of the polishing method 3.

圖20係顯示拋光方法2及拋光方法3之加工效率之圖表。 Fig. 20 is a graph showing the processing efficiency of the polishing method 2 and the polishing method 3.

6‧‧‧推壓機構 6‧‧‧Pushing mechanism

60‧‧‧推壓構件 60‧‧‧ Pushing members

61‧‧‧推壓作用部 61‧‧‧Pushing action department

63‧‧‧重錘構件 63‧‧‧heavy hammer components

600‧‧‧推壓片 600‧‧‧Pushing tablets

611‧‧‧推壓面 611‧‧‧ pushing surface

Claims (6)

一種研磨粒埋入裝置,至少具有用以推壓研磨定盤的推壓機構,該研磨粒埋入裝置將包含研磨粒之漿液供至前述研磨定盤之表面,並藉前述推壓機構經前述漿液而推壓前述研磨定盤,並且使前述推壓機構與前述研磨定盤滑動而可將前述漿液中包含之研磨粒埋入前述研磨定盤之表面,其特徵在於:前述推壓機構包含:複數個推壓構件、重錘構件,配設於前述複數個推壓構件之上方而可對前述研磨定盤壓附前述複數個推壓構件、超音波振子,可對前述複數個推壓構件分別施加超音波,前述研磨粒埋入裝置具備:對前述超音波振子供給電力之電力供給機構,前述複數個推壓構件則分別具有推壓面,該等推壓面配設有複數個圓盤狀之推壓片。 An abrasive grain embedding device having at least a pressing mechanism for pushing a polishing plate, the abrasive grain embedding device supplying a slurry containing abrasive grains to a surface of the polishing plate, and by the pressing mechanism Pressing the polishing plate by the slurry, and sliding the pressing mechanism and the polishing plate to embed the abrasive particles contained in the slurry into the surface of the polishing plate, wherein the pressing mechanism comprises: a plurality of pressing members and a weight member disposed above the plurality of pressing members to press the plurality of pressing members and the ultrasonic vibrator on the polishing platen, respectively, and the plurality of pressing members may be respectively The ultrasonic particle embedding device includes: a power supply mechanism that supplies electric power to the ultrasonic vibrator, wherein each of the plurality of pressing members has a pressing surface, and the pressing surface is provided with a plurality of discs Push the piece. 如申請專利範圍第1項之研磨粒埋入裝置,前述推壓構件配置於不自前述研磨定盤之使用區域突出之位置。 In the abrasive grain embedding apparatus of the first aspect of the invention, the pressing member is disposed at a position that does not protrude from a use region of the polishing platen. 一種拋光裝置,包含有:研磨定盤,具有可研磨被加工物之研磨面,而受支持成可旋轉;旋轉驅動機構,可使前述研磨定盤旋轉;被加工物保持機構,具有與前述研磨定盤之前述研磨面相對而可保持被加工物之保持面,可將被加工物保持在與前述研磨定盤抵接之狀態; 漿液供給機構,可對前述研磨定盤之表面選擇性地供給包含研磨粒之漿液與不包含研磨粒之漿液;及研磨粒埋入裝置,可經藉前述漿液供給機構而供至前述研磨定盤之表面之包含研磨粒之漿液而推壓前述研磨定盤,並且使前述推壓機構與前述研磨定盤滑動而將前述漿液中包含之研磨粒埋入前述研磨定盤之表面;前述研磨粒埋入裝置具備:推壓機構,包含:複數個推壓構件、重錘構件,配設於前述複數個推壓構件之上方而可對前述研磨定盤壓附前述複數個推壓構件、超音波振子,可對前述複數個推壓構件分別施加超音波;及電力供給機構,對前述超音波振子供給電力,前述複數個推壓構件則分別具有推壓面,該等推壓面配設有複數個圓盤狀之推壓片。 A polishing apparatus comprising: a polishing plate having a grinding surface capable of grinding a workpiece, and being supported to be rotatable; a rotary driving mechanism for rotating the polishing plate; and a workpiece holding mechanism having the same grinding The polishing surface of the fixed plate is opposite to the holding surface of the workpiece, and the workpiece can be held in contact with the polishing platen; a slurry supply mechanism for selectively supplying a slurry containing abrasive grains and a slurry containing no abrasive grains to the surface of the polishing platen; and an abrasive grain embedding device which can be supplied to the polishing plate by the slurry supply mechanism a slurry containing abrasive grains on the surface thereof to press the polishing plate, and the pressing mechanism and the polishing plate are slid to embed the abrasive grains contained in the slurry into the surface of the polishing plate; the abrasive grains are buried The injecting device includes: a pressing mechanism, comprising: a plurality of pressing members and a weight member disposed above the plurality of pressing members to press the plurality of pressing members and the ultrasonic vibrator on the polishing platen An ultrasonic wave may be applied to each of the plurality of pressing members; and a power supply mechanism that supplies electric power to the ultrasonic vibrator, wherein the plurality of pressing members respectively have pressing surfaces, and the pressing surfaces are provided with a plurality of pressing surfaces Disc-shaped push piece. 一種拋光方法,係使用申請專利範圍第3項之拋光裝置而拋光前述被加工物保持機構所保持之被加工物,包含以下步驟:第1拋光步驟,對前述研磨定盤之表面供給包含研磨粒之漿液,同時藉前述推壓機構經包含前述研磨粒之漿液而推壓前述研磨定盤,並使前述推壓機構與前述研磨定盤滑動而將前述漿液中包含之研磨粒埋入前述研磨定盤之表面,且使前述被加工物保持機構所保持之被加工物與前述研磨定盤滑動而拋光前述被加工物之表面;及 第2拋光步驟,在實施前述第1拋光步驟後,對前述研磨定盤之表面供給不包含研磨粒之漿液,同時使前述被加工物保持機構所保持之被加工物與前述研磨定盤滑動而拋光前述被加工物之表面。 A polishing method for polishing a workpiece held by the workpiece holding mechanism by using a polishing apparatus according to item 3 of the patent application, comprising the steps of: a first polishing step of supplying a surface of the polishing plate comprising abrasive grains And the slurry is pressed by the pressing mechanism to press the polishing plate by the slurry containing the abrasive grains, and the pressing mechanism is slid with the polishing plate to embed the abrasive grains contained in the slurry into the polishing process. a surface of the disk, and the workpiece held by the workpiece holding mechanism is slid with the polishing plate to polish the surface of the workpiece; and In the second polishing step, after the first polishing step is performed, a slurry containing no abrasive grains is supplied to the surface of the polishing platen, and the workpiece held by the workpiece holding mechanism is slid with the polishing platen. Polishing the surface of the aforementioned workpiece. 如申請專利範圍第4項之拋光方法,在前述第1拋光步驟與前述第2拋光步驟之間,進而包含清洗前述研磨定盤之清潔步驟。 The polishing method of claim 4, further comprising a cleaning step of cleaning the polishing plate between the first polishing step and the second polishing step. 如申請專利範圍第4或5項之拋光方法,前述被加工物係藍寶石、SiC、GaN、AlN之任一者。 In the polishing method of claim 4 or 5, the workpiece is sapphire, SiC, GaN or AlN.
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