TWI576450B - Coating apparatus - Google Patents

Description

Coating device

The present invention relates to a coating apparatus, and more particularly to a coating apparatus having a plurality of correction plates.

In the process of thin film components, film thickness uniformity is the condition of film thickness distribution. Various mechanism variables, material variables and vapors all affect the uniformity of the film, and also directly affect the coating yield. The term "film uniformity" refers to the condition of film thickness distribution. The uniformity means that the thickness of the film at different positions of the substrate support frame is quite close, so the uniformity is good, the production range is large, the production capacity is high, and the product yield is high. Therefore, film uniformity has always been a very important production factor in the film plating industry, and the uniformity of the film can reduce the production cost. Therefore, how to control the uniformity of film thickness is one of the important topics for equipment manufacturers and even component process companies.

At present, the method for improving the uniformity of the film is generally to place a coating correction plate between the coating source and the substrate support frame, and the coating correction plate is placed directly above the coating source or at a position 90° from the left and right of the coating source to try to improve Film thickness uniformity. However, it is often impossible to maintain film thickness uniformity due to plating of different products and materials, adjustment mechanisms, and vapor parameters. Engineers must spend time adjusting. Therefore, the current technology is susceptible to the vapor parameters of the coating source in the coating machine. And the influence of the variation of the radius of curvature of the substrate support frame.

The Republic of China invention patent No. 528890, Yano Bangyan and Neigu Longbo placed the film thickness correction plate directly above the evaporation source in 2002 to obtain good film thickness uniformity, but this case did not mention how to reduce the vapor parameters and substrate support. The variation of the radius of curvature of the frame does not mention the preferred position of the coating correction plate. The Republic of China invention patent No. 528890, Shen Gaodian Ming installed several film thickness correction plates near the substrate in 2003 to obtain good film thickness uniformity, the purpose of which is to make the film forming device suitable for plating different films, but this case is not It is mentioned how to reduce the influence of fluctuations in the vapor parameters and the radius of curvature of the substrate support. In the Republic of China invention patent No. I391507, in 2007, Jane Shizhe fixed a plurality of correction plates on a side wall of the vacuum coating chamber through a rotating mechanism to obtain good film thickness uniformity, but the method does not mention how to reduce the vapor parameters. The variation of the radius of curvature of the substrate support frame. In the Republic of China invention patent I357446, Guan Dashuang, Fan Chunsheng and Lin Jiade moved the film thickness correction plate up and down or horizontally in 2008 to achieve uniform deposition of film, but this case did not mention how to reduce the vapor parameters and substrate support. The influence of the variation of the radius of curvature of the frame. In the Republic of China invention patent application number 097120079, Yan Shijie placed the film thickness correction plate directly above the evaporation source in 2009, and installed a light source or detection device on the film thickness correction plate to obtain good film thickness uniformity and film properties at the same time. However, this case does not mention how to reduce the influence of fluctuations in the vapor parameters and the radius of curvature of the substrate support frame. In the Republic of China invention patent I383062, Wang Zhongpei used several baffles to adjust the shape of the coating correction plate in 2013 to obtain good film thickness uniformity, but this case does not mention how to reduce the variation of vapor parameters and substrate frame radius of curvature. influences.

It can be seen from the above that the prior art has not discussed and proposed how the coating device reduces steaming. The effect of variations in the gas parameters and the radius of curvature of the substrate support does not mention how the preferred position of the coating correction plate affects the uniformity of the film.

In view of the above problems of the prior art, the object of the present invention is to provide a coating device in which multiple correction plates are disposed at optimal positions, and to propose effects of vapor parameters and substrate holder radius of curvature on film uniformity to solve the film. The problem of poor uniformity.

In view of the above, the present invention provides a coating apparatus comprising a first coating correction plate system, a second coating correction plate system, a first coating source system, a second coating source system, a substrate supporting mechanism, and a first semi-surrounding surface. The vacuum coating chamber includes a bottom, a top, and a surrounding surface surrounding the bottom and the top. The substrate supporting mechanism is disposed at the top. The first coating source system and the second coating source system are respectively disposed on two sides of the bottom, and a vertical line extending through the midpoint is drawn by a line connecting the first coating source system and the second coating source system, and the vertical extending surface of the vertical line will be The peripheral surface is divided into a first half surrounding surface of the first coating source system and a second half surrounding surface of the second coating source system. The first coating correction plate system may include a first correction plate and a first base, the first correction plate is movably disposed on the first base, and the second coating correction plate system may include a second correction plate and a second base, and the second correction plate The activity is disposed on the second base, wherein the first coating correction plate system can be disposed on the left and right sides of the first half of the circumferential surface on the first extension surface of the first half of the peripheral surface and the connection point of the first half In the 10° region, the second coating correction plate system can be disposed on the left and right 10° regions on the vertical extension line of the second half surrounding surface on the second half surrounding surface by the second base. The second coating correction plate system is coated with the first coating source system, the first plating The membrane correction plate system is coated with the second coating source system.

Preferably, the first coating source system and the second coating source system each further comprise an electron gun evaporation system.

Preferably, the first coating source system and the second coating source system each further comprise a plasma sputtering system.

Preferably, the substrate carrying mechanism further comprises an umbrella device.

Preferably, the range of motion of the first correction plate and the second correction plate may be vertically downward to horizontal.

In view of the above, the present invention further provides a coating apparatus comprising a coating correction plate system, a substrate bearing mechanism, a vacuum coating chamber, and a coating source system. The vacuum coating chamber includes a bottom, a top, and a surrounding surface surrounding the bottom and the top. The substrate carrying mechanism is disposed at the top. The complex array coating source system is placed at the bottom. The number of complex array coating correction plate systems is the same as the number of composite array coating source systems, and any coating correction plate system may include a correction plate and a base; any coating correction plate system may be disposed on the surrounding surface by a corresponding base; Any coating source system cooperates with a single and unique coating correction plate system for coating, and the vacuum coating chamber is perpendicular to the first diameter of the bottom of the coating system and located at the bottom and at the bottom of the second diameter. The vertically extending surface divides the peripheral surface into a semi-circumferential surface adjacent to the coating source system and the other peripheral surface of the coating source system; the coating correction plate system corresponding to the coating source system is installed in the coating source The area on the semi-circumferential surface of the system that is separated from the vertical extension surface of the first diameter by 10°.

Preferably, the complex array coating source system further comprises an electron gun evaporation system.

Preferably, the complex array coating source system further comprises a plasma sputtering system.

Preferably, the substrate carrying mechanism further comprises an umbrella device.

Preferably, the range of motion of each correction plate can be vertically downward to horizontal.

Further, please refer to Fig. 5, which is a plan view of a second embodiment of the coating apparatus according to the present invention. The larger the angle between the correction plate setting position and the directly above the coating source system, the larger the area of the correction plate needs to be, mainly because the distribution of coating molecules or atoms on the substrate is asymmetric and uneven, in the substrate supporting mechanism. The larger the angle from the coating source system, the less the number of deposited molecules or atoms deposited. Because of the uniformity of the film, the need for the total number of masking molecules or atoms is the same, so the area of the correction plate needs to be larger.

Further, the film thickness is inversely proportional to the square of the distance between the substrate and the coating source. Therefore, the further the distance, the thinner the film thickness on the substrate, and the correction plate is placed far away from the coating source system during the coating process. Reducing the influence of the correction plate on the thickness of the film, the film thickness uniformity can be reduced, and the film production yield is improved. Therefore, the correction plate is placed at a position 180° directly above the coating source system for different evaporation in the coating device. The source vapor parameters have a good film uniformity distribution. The source vapor parameters of the coating are related to the amount, mode and plating of the energy generated by the vapor.

Further, the correction plate is placed 180° directly above the coating source system, and there is still a good film uniformity distribution for the variation of the radius of curvature of the substrate supporting mechanism in the coating device, and the reason is still to place the correction plate away from the coating source. Farther away, reduce the correction plate to film thickness The effect of the degree reduces the uniformity of film thickness uniformity. For film thickness uniformity, the vaporization parameters of the evaporation source have a greater influence on the radius of curvature of the substrate support.

As described above, the coating apparatus according to the present invention may have one or more of the following advantages:

(1) The correction plate design of the coating device considers the influence of vapor parameters and the radius of curvature of the substrate support frame on the uniformity of the film.

(2) The coating device has multiple correction plates set at the optimal position

For a better understanding and understanding of the technical features and the efficacies of the present invention, the preferred embodiments and the detailed description are as follows.

10‧‧‧ Coating device

20‧‧‧vacuum coating chamber

30‧‧‧Substrate carrier

40‧‧‧First coating source system

50‧‧‧Second coating source system

60‧‧‧ Coating source system

70‧‧‧First Coating Correction Plate System

80‧‧‧Second coating correction plate system

90‧‧‧ Coating correction plate system

210‧‧‧ bottom

220‧‧‧ top

230‧‧‧around surface

710‧‧‧ first correction board

720‧‧‧First base

810‧‧‧ second correction board

820‧‧‧Second base

910‧‧‧Correction board

920‧‧‧Base

211‧‧‧Connected

212‧‧‧Deep line

231‧‧‧The first half of the surrounding area

232‧‧‧The second half of the surrounding area

233‧‧‧Half surrounding

214‧‧‧first diameter

215‧‧‧second diameter

The above and other features and advantages of the present invention will become more apparent from the detailed description of the exemplary embodiments of the accompanying drawings in which: FIG. 1 is a double coating source system of a coating apparatus according to the present invention. 2 is a plan view of a first embodiment of a double coating source system of a coating apparatus according to the present invention. FIG. 3 is a second embodiment of a plurality of coating source systems of a coating apparatus according to the present invention. Side view Figure 4 is a schematic view showing the operation of the second embodiment of the plurality of coating source systems of the coating apparatus according to the present invention; and Figure 5 is a plan view of the second embodiment of the plurality of coating source systems of the coating apparatus according to the present invention; The coating source steam parameter versus the film thickness ratio root mean square value chart of the preferred embodiment of the coating apparatus according to the present invention; and FIG. 7 is the substrate carrier mechanism radius of curvature of the preferred embodiment of the coating apparatus according to the present invention. The film thickness ratio rms value map.

As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. When the phrase "at least one of" is preceded by a list of elements, the entire list of elements is modified instead of the individual elements in the list.

Referring to Fig. 1, there is shown a side view of a first embodiment of a dual coating source system for a coating apparatus according to the present invention. In FIG. 1, the coating apparatus 10 includes a vacuum coating chamber 20, a substrate supporting mechanism 30, a first coating source system 40, a second coating source system 50, a first plating correction plate system 70, and a second plating correction plate system 80. The vacuum coating chamber 20 includes a bottom portion 210, a top portion 220, and a peripheral surface 230 surrounding the bottom portion 210 and the top portion 220. The substrate carrying mechanism 30 is disposed at the top 220. The first coating source system 40 and the second coating source system 50 each further comprise an electron gun evaporation system, or respectively comprise a plasma sputtering system.

Please refer to FIG. 2, which is a plan view of an embodiment of a dual coating source system of a coating apparatus according to the present invention, and provides a definition of a position angle of a coating source system and a correction plate. In FIG. 2, the first coating source system 40 and the second coating source system 50 are respectively disposed on both sides of the bottom portion 210, and are drawn through the connection line 211 of the first coating source system 40 and the second coating source system 50. In the point of the vertical line 212, the vertical extension of the mid-perpendicular line 212 divides the peripheral surface 230 into a first semi-circumferential surface 231 adjacent to the first coating source system 40 and a second semi-peripheral surface 232 adjacent to the second coating source system 50.

Referring to FIG. 1 and FIG. 2 , the first coating correction plate system 70 can include a first correction plate 710 and a first base 720 . The first correction plate 710 is movably disposed on the first base 720 , and the second coating correction is performed. The board system 80 can include a second correction board 810 and a second base 820. The second correction board 810 is movably disposed on the second base 820. The first coating correction board system 70 can be disposed on the first base 720. The contact between the half of the peripheral surface 231 and the connecting line 211 is in a 10° region on the left and right vertical extension lines on the first semi-circumferential surface 231, and the second coating correction plate system 80 can be disposed on the second base 820. The contact between the two halves of the peripheral surface 232 and the connecting line 211 is on the left and right sides of each of the left and right peripheral surfaces 232, and the second coating correction plate system 80 is matched with the first coating source system 40 for coating. A coating correction plate system 70 is coated with the second coating source system 50.

The substrate carrying mechanism 30 further includes an umbrella device. The range of motion of the first correction plate 710 and the second correction plate 810 may be vertically downward to horizontal.

Please refer to FIG. 3, which is a side view of a second embodiment of a plurality of coating source systems for a coating apparatus according to the present invention. In FIG. 3, the coating device 10 includes a vacuum coating chamber 20. A substrate carrier mechanism 30, two sets of coating source systems 60, and two sets of coating correction plate systems 90. In order to clearly show the correspondence, only one of the coating source systems and their corresponding coating correction plate systems are numbered in the third and third figures. The vacuum coating chamber 20 includes a bottom portion 210, a top portion 220, and a peripheral surface 230 surrounding the bottom portion 210 and the top portion 220. The substrate carrying mechanism 30 is disposed at the top 220. The complex array coating source system 60 is disposed at the bottom 210. The number of complex array coating correction plate systems 90 is the same as the number of composite array coating source systems 60. Any coating correction plate system 90 can include a correction plate 910 and a base 920, and any coating correction plate system 90 can be provided by a corresponding base 920. To be placed on the surrounding surface 230.

Please refer to FIG. 4, which is a schematic view showing the operation of the second embodiment of the plurality of coating source systems of the coating apparatus according to the present invention. In Figure 4, two sets of coating source systems and their corresponding coating source system 60 are shown to cooperate with a single and unique coating correction plate system for coating. In order to clearly show the correspondence, only one of the coating source systems and their corresponding coating correction plate systems are numbered in FIG. Please refer to Figure 5, which provides a definition of the angle of the coating source system and the correction plate. For the sake of clarity, Figure 5 shows only one set of coating source systems. The vacuum coating chamber 20 divides the peripheral surface 230 adjacent to the coating source system by a vertically extending surface that passes through either coating source system 60 and is perpendicular to the first diameter 214 of the bottom 210 and at the second diameter 215 of the bottom 210. The peripheral surface 233 of the half of 60 and the other peripheral surface 233 of the coating source system 60 are disposed on the semi-circumferential surface 233 of the coating source system 60. The vertical extension surface of the first diameter 214 is an area of 10° each of the left and right angles.

The coating material is heated by the evaporation source in a vacuum, and if the vapor pressure is greater than the pressure of the vacuum, the molecules or atoms of the coating material begin to overflow from the surface of the material and go straight in all directions. Assuming that there is no collision with other molecules or atoms during the straight-through process, the evaporated molecules or atoms will directly adhere to the substrate and will not fall off. The molecules or atoms of the material will accumulate on the substrate to form a thin film. To calculate the film thickness on the substrate, the mass of the evaporation source attached to the substrate must be calculated. The mass of the evaporation source is proportional to the solid angle d ω of the substrate to the evaporation source, and is also related to the emission characteristics of the evaporation source. Generally, the evaporation source is divided into two types: a point source and a directed surface source. The electron beam (Electron Beam Gun) in the coating machine is used as an example, and the evaporation source is directional. Area evaporation source. The evaporation direction of the directional area evaporation source is semi-circular upward, and the evaporation source mass dM of the substrate is proportional to the cosine value of the emission angle ψ, and the emission angle ψ is the normal line of the evaporation source and the straight line connecting the evaporation source to the substrate. The angle of the clip. Combine the above situation and write the following formula Where m represents the total amount of evaporation, dA represents the substrate area, r ' represents the distance between the substrate and the evaporation source, and θ represents the angle between the normal of the substrate and the line connecting the substrate to the evaporation source.

However, the emission characteristics of the electron gun evaporation source are more appropriately expressed by cosn ,, where n represents the evaporation source vapor parameter, which is related to the amount, mode and plating of the energy generated by the vapor. Therefore, n=0 represents the point evaporation source, n>0 represents the directional area evaporation source, and the formula (1) is corrected to Assuming a film density of μ and a film thickness of t on the substrate, dM = μ t dA (3) is substituted into equation (2). Equation (4) is a general expression of the film thickness under the actual evaporation source.

Taking the shape of the spherical substrate carrying structure as an example, the evaporation source position is below the center point of the radius of curvature of the substrate supporting structure, and the geometric relationship at any point P on the substrate supporting structure is as follows, r ' ² = h ² + S ² + r ² -2 Sr cos ψ (5)

Where R is the radius of curvature of the substrate carrying structure, S is the vertical distance from the P point to the central axis of the substrate carrying structure, h is the vertical height of the P point to the evaporation source, and r is the vertical distance from the evaporation source to the central axis of the substrate carrying structure, R _s The distance from the evaporation source to the center of curvature of the substrate carrying structure, h ₀ is the vertical height from the evaporation source to the apex of the substrate carrying structure.

Available via equations (5), (6), and (7)

Substituting the formula (4), the film thickness at the point P is In order to obtain better film thickness uniformity, the substrate supporting structure is rotated. Assuming that the rotation period is much smaller than the evaporation time, the film thickness of the substrate bearing structure at any point on the circle centered on the rotation axis should be uniform, that is, the meaning of the rotation is that the thickness of the film at each point on the same radius circle is not rotated. average. For example, if the spherical substrate is supported, the position of the evaporation source is below the center of curvature of the substrate, and the film thickness is Film thickness ratio for Where t ₀ is the film thickness of S=0, that is, the film thickness at the center point of the substrate.

From the theory of film thickness distribution, it is known that the film thickness is related to the radius of curvature and height of the substrate supporting structure. Therefore, at any two points on the substrate supporting structure, the film thickness will be different due to the position difference, in order to eliminate the difference in film thickness. The correction plate is required to be given a thickness correction, and the excess plating material is shielded during coating to make the film thickness of each glass substrate uniform. Since the shape of the correction plate is related to the film thickness distribution, when designing the correction plate, first, the film thickness ratio distribution on the substrate supporting structure is calculated, and the ratio of the shielding plate shielding range is (the film thickness ratio - the minimum film thickness ratio) divided by Film thickness ratio. If you want to design the shape of the correction plate, you need to calculate any point on the radius of the substrate load-bearing structure. The proportion of the occlusion range is then calculated for the film thickness ratio at each point on the different radii of the substrate carrying structure. After obtaining the film thickness ratio of each point on the different radius of the substrate carrying structure, according to the position of the correcting plate, the film thickness ratio is added to the ratio of the shielding range of the correction plate at different radius sizes, and then the film thickness ratio is determined according to different radius sizes. The sum of the occlusion points can be restored to the correction plate, and the shape of the exclusive correction plate at different placement positions can be designed.

Please refer to Figure 5. The larger the angle between the correction plate setting position and the directly above the coating source system, the larger the area of the correction plate needs to be, mainly because the distribution of coating molecules or atoms on the substrate is asymmetric and uneven, in the substrate supporting mechanism. The larger the angle from the coating source system, the less the number of deposited molecules or atoms deposited. Because of the uniformity of the film, the need for the total number of masking molecules or atoms is the same, so the area of the correction plate needs to be larger.

Please refer to Table 1 and Figure 6. Table 1 shows the ratio of the film thickness to the root mean square (RMS) of the special correction plate (the design of the evaporation source vapor parameter is 3). The relationship between the coating source vapor parameters, and Fig. 6 is a plot of the source-steam parameters versus the film-to-thickness ratio of the preferred embodiment of the coating apparatus according to the present invention.

Since the film thickness is inversely proportional to the square of the distance between the substrate and the coating source, the further the distance, the thinner the film thickness on the substrate, and the correction plate is placed away from the coating during the coating process. The source system is far away, which can reduce the influence of the correction plate on the film thickness, reduce the film thickness uniformity and improve the film production yield, so the correction plate is placed 180° above the coating source system. For the different evaporation source vapor parameters in the coating device, there is a better film uniformity distribution. The source vapor parameters of the coating are related to the amount of energy generated by the vapor: the method and the plating.

Please refer to Table 2 and Figure 7 together. Table 2 shows the relationship between the film thickness ratio RMS and the different radius of curvature of the substrate support frame under the special correction plate (same table 1) with different placement positions. The figure is a graph of the radius of curvature versus film thickness ratio of the substrate carrying mechanism of the preferred embodiment of the coating apparatus according to the present invention.

The correction plate is placed 180° directly above the coating source system. There is still a good film uniformity distribution for the variation of the radius of curvature of the substrate supporting mechanism in the coating device. The reason is that the correction plate is placed far away from the coating source. The effect of the correction plate on the film thickness is reduced, and the uniformity of the film thickness is reduced. For film thickness uniformity, the vaporization parameters of the evaporation source have a greater influence on the radius of curvature of the substrate support.

The present invention has been particularly shown and described with reference to the exemplary embodiments thereof, and it is understood by those of ordinary skill in the art Various changes in form and detail can be made in the context of the category.

10‧‧‧ Coating device

20‧‧‧vacuum coating chamber

30‧‧‧Substrate carrier

40‧‧‧First coating source system

50‧‧‧Second coating source system

70‧‧‧First Coating Correction Plate System

80‧‧‧Second coating correction plate system

210‧‧‧ bottom

220‧‧‧ top

230‧‧‧around surface

710‧‧‧ first correction board

720‧‧‧First base

810‧‧‧ second correction board

820‧‧‧Second base

Claims (10)

A coating device comprises: a vacuum coating chamber comprising a bottom, a top and a surrounding surface surrounding the bottom and the top; a substrate supporting mechanism disposed on the top; a first coating source system and a second a coating source system, the first coating source system and the second coating source system are respectively disposed on two sides of the bottom, and a line connecting the first coating source system and the second coating source system is drawn through the midpoint a vertical line extending from the vertical surface of the vertical line into a first half of the first coating source system and adjacent to a second half of the second coating source system; a first coating a first plate correction plate system comprising a first correction plate and a first base, wherein the first correction plate is movably disposed on the first base, the second coating The correction plate system includes a second correction plate and a second base, wherein the second correction plate is movably disposed on the second base, wherein the first coating correction plate system is disposed on the first base by the first base First half The contact between the surrounding surface and the connecting line is on a left and right 10° area on a vertical extension line of the first half surrounding surface, and the second coating correction plate system is disposed on the second half by the second base The contact between the peripheral surface and the connecting line is on a left and right 10° area on a vertical extension line of the second half surrounding surface, and the second coating correction plate system is coated with the first coating source system, the first coating The correction plate system is coated with the second coating source system. The coating device of claim 1, wherein the first coating source system and the second coating source system each further comprise an electron gun evaporation system. The coating device of claim 1, wherein the first coating source system and the second coating source system each further comprise a plasma sputtering system. The coating device of claim 1, wherein the substrate supporting mechanism further comprises an umbrella device. The coating device of claim 1, wherein the first correction plate and the second correction plate have a range of motion from vertically downward to horizontal. A coating device comprising: a vacuum coating chamber comprising a bottom portion, a top portion and a surrounding surface surrounding the bottom portion and the top portion; a substrate supporting mechanism disposed on the top; the composite array coating source system is disposed on the a bottom array; a complex array coating correction plate system, the number of the composite array coating correction plate system is the same as the number of the composite array coating source system, and any of the coating correction plate systems includes a correction plate and a base, and any coating correction The plate system is disposed on the peripheral surface by the corresponding base, and any of the coating source systems cooperates with the single and unique coating correction plate system for coating, and the vacuum coating chamber passes through either The coating source system is located at a bottom of the first diameter of the first diameter and at a bottom of the second diameter of the vertical extension surface to divide the peripheral surface into a semi-circumferential surface adjacent to the coating source system and separate from the coating source system The other half of the peripheral surface, the coating correction plate system corresponding to the coating source system is mounted on the semi-circumferential surface away from the coating source system and the first diameter Right and left vertically extending surface area one 10 ° angle. The coating device according to claim 6, wherein the composite array coating source The system also includes an electron gun evaporation system. The coating device of claim 6, wherein the multiple array coating source system further comprises a plasma sputtering system. The coating device of claim 6, wherein the substrate supporting mechanism further comprises an umbrella device. The coating device of claim 6, wherein each of the correction plates has a range of motion from vertically downward to horizontal.