TWI572981B - Composition for solder resist, cured membrane and method for manufacturing the cured film - Google Patents

Composition for solder resist, cured membrane and method for manufacturing the cured film Download PDF

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TWI572981B
TWI572981B TW102114398A TW102114398A TWI572981B TW I572981 B TWI572981 B TW I572981B TW 102114398 A TW102114398 A TW 102114398A TW 102114398 A TW102114398 A TW 102114398A TW I572981 B TWI572981 B TW I572981B
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group
compound
solder resist
acid
resist composition
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TW102114398A
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TW201344356A (en
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玉田芳紀
室祐継
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富士軟片股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Description

阻焊劑組成物、硬化膜及硬化膜的製造方法 Solder resist composition, cured film, and cured film manufacturing method

本發明是有關於一種阻焊劑組成物。進而,本發明亦有關於一種使用阻焊劑組成物的硬化膜及該硬化膜的製造方法。另外,本發明是有關於一種包含該硬化膜的固體攝像元件、液晶顯示裝置或有機電致發光(Electroluminescence,EL)顯示裝置。 This invention relates to a solder resist composition. Further, the present invention relates to a cured film using a solder resist composition and a method of producing the cured film. Further, the present invention relates to a solid-state imaging device including the cured film, a liquid crystal display device, or an organic electroluminescence (EL) display device.

先前,於形成阻焊劑等的永久圖案的情況下,當要在作為目標的構件上形成感光層時,使用如下的方法:利用旋塗法、網版印刷法、噴霧印刷法使液狀的組成物形成為塗膜並進行乾燥的方法;藉由將組成物塗佈於臨時支撐體上,並進行乾燥而製成具有感光層的積層膜,然後利用真空層壓機或輥式層壓機僅將感光層轉印至構件上的方法。作為形成阻焊劑等的永久圖案的方法,已知有例如以下的方法等:於要形成永久圖案的矽晶圓上、經佈線的矽晶圓上、或覆銅積層板等基體上,藉由上述方法而形成感光層,對該積層體中的感光層進行曝光,曝光後,對感光層進行顯影而形成圖案,其後,進行硬化處理等,藉此形成永久圖 案。 Previously, in the case of forming a permanent pattern of a solder resist or the like, when a photosensitive layer is to be formed on a target member, the following method is used: a liquid composition by a spin coating method, a screen printing method, or a spray printing method a method of forming a film as a coating film and drying it; applying a composition to a temporary support and drying to form a laminated film having a photosensitive layer, and then using a vacuum laminator or a roll laminator A method of transferring a photosensitive layer onto a member. As a method of forming a permanent pattern such as a solder resist or the like, for example, a method of forming a permanent pattern on a germanium wafer, a wired germanium wafer, or a copper clad laminate, or the like is known. The photosensitive layer is formed by the above method, and the photosensitive layer in the laminated body is exposed, and after exposure, the photosensitive layer is developed to form a pattern, and then subjected to a curing treatment or the like to form a permanent pattern. case.

此種阻焊劑的永久圖案廣泛用於行動電話或數位照相機、數位攝像機、監視照相機等中所使用的固體攝像元件(影像感測器)(日本專利特開2012-003225號公報)。 The permanent pattern of such a solder resist is widely used for a solid-state imaging device (image sensor) used in a mobile phone, a digital camera, a digital camera, a surveillance camera, etc. (Japanese Patent Laid-Open Publication No. 2012-003225).

但是,阻焊劑組成物並非僅是於製備後立即用於圖案形成的情況,暫時加以保存後用於圖案形成的情況亦多。本申請案發明者對保存一定期間後的各種性能進行了研究,結果可知存在各種性能劣化的傾向。本申請案發明的目的在於解決該問題點,其目的在於提供一種紅外線遮光性優異、且經時劣化少的阻焊劑組成物。 However, the solder resist composition is not used for pattern formation immediately after preparation, and is often used for pattern formation after being temporarily stored. The inventors of the present application have studied various performances after storage for a certain period of time, and as a result, it has been found that various performances tend to deteriorate. An object of the present invention is to solve the problem, and an object of the invention is to provide a solder resist composition which is excellent in infrared light shielding property and which has little deterioration over time.

基於上述課題,本申請案發明者進行了努力研究,結果發現藉由使用特定的聚合性化合物,可獲得紅外線遮光性優異、且經時後的劣化少的阻焊劑組成物。尤其,亦如後述的實施例中所示般,即便是與本發明中所使用的特定的聚合性化合物近似的化合物,於經時後的劣化方面亦產生大的差異,因此可知本發明的效果是多麼令人吃驚。 In the above-mentioned problem, the inventors of the present invention conducted an effort to find a solder resist composition which is excellent in infrared light-shielding property and has little deterioration after time by using a specific polymerizable compound. In particular, as shown in the examples described later, even a compound similar to the specific polymerizable compound used in the present invention has a large difference in deterioration after the passage, and thus the effect of the present invention is known. How amazing it is.

具體而言,藉由以下的手段<1>,較佳為手段<2>~手段<20>來解決上述課題。 Specifically, the above problem is solved by the following means <1>, preferably by means <2> to <20>.

<1>一種阻焊劑組成物,其包括由通式(1)所表示的化合物及紅外線遮光性粒子。 <1> A solder resist composition comprising the compound represented by the formula (1) and infrared light-blocking particles.

通式(1) General formula (1)

通式(1)中,L分別為包含伸烷基與-O-的組合的基,Ac分別為(甲基)丙烯醯氧基。 In the formula (1), L is a group each containing a combination of an alkylene group and -O-, and each of Ac is a (meth)acryloxy group.

<2>如<1>所述的阻焊劑組成物,其中通式(1)中,L為包含-CH2-與-O-的組合的基。 <2> The solder resist composition according to <1>, wherein, in the formula (1), L is a group including a combination of -CH 2 - and -O-.

<3>如<1>或<2>所述的阻焊劑組成物,其中上述紅外線遮光性粒子包含鎢化合物。 <3> The solder resist composition according to <1>, wherein the infrared ray blocking particles comprise a tungsten compound.

<4>如<1>或<2>所述的阻焊劑組成物,其中上述紅外線遮光性粒子由下述通式(2)表示。 <4> The solder resist composition according to <1>, wherein the infrared light-shielding particles are represented by the following general formula (2).

MxWyOz…(2);M表示金屬,W表示鎢,O表示氧;0.001≦x/y≦1.1;2.2≦z/y≦3.0。 M x W y O z (2); M represents a metal, W represents tungsten, O represents oxygen; 0.001 ≦ x / y ≦ 1.1; 2.2 ≦ z / y ≦ 3.0.

<5>如<4>所述的阻焊劑組成物,其中於通式(2)中,M為鹼金屬。 <5> The solder resist composition according to <4>, wherein in the formula (2), M is an alkali metal.

<6>如<4>所述的阻焊劑組成物,其中於通式(2)中,M為銫。 <6> The solder resist composition according to <4>, wherein in the formula (2), M is ruthenium.

<7>如<1>至<6>中任一項所述的阻焊劑組成物,其中於通式(1)中,L為包含-C2H4-與-O-的組合的基。 The solder resist composition according to any one of <1> to <6> wherein, in the formula (1), L is a group comprising a combination of -C 2 H 4 - and -O-.

<8>如<1>至<7>中任一項所述的阻焊劑組成 物,其更包括聚合起始劑。 <8> A solder resist composition according to any one of <1> to <7> Further, it further comprises a polymerization initiator.

<9>如<1>至<7>中任一項所述的阻焊劑組成物,其更包括α-胺基酮系聚合起始劑。 The solder resist composition according to any one of <1> to <7> which further comprises an α-amino ketone polymerization initiator.

<10>如<1>至<9>中任一項所述的阻焊劑組成物,其更包括鹼可溶性黏合劑。 <10> The solder resist composition according to any one of <1> to <9> which further comprises an alkali-soluble binder.

<11>如<1>至<10>中任一項所述的阻焊劑組成物,其中固體成分濃度為30質量%~80質量%。 The solder resist composition according to any one of <1> to <10> wherein the solid content concentration is 30% by mass to 80% by mass.

<12>一種硬化膜,其是使如<1>至<11>中任一項所述的阻焊劑組成物硬化而形成。 <12> A cured film formed by curing the solder resist composition according to any one of <1> to <11>.

<13>一種固體攝像元件、液晶顯示裝置或有機EL顯示裝置,其包括如<12>所述的硬化膜。 <13> A solid-state image sensor, a liquid crystal display device, or an organic EL display device, comprising the cured film according to <12>.

<14>一種圖案硬化膜的製造方法,其包括:將如<1>至<11>中任一項所述的阻焊劑組成物應用於基板上的步驟;以及對上述阻焊劑組成物進行圖案曝光的步驟。 <14> A method of producing a pattern-hardening film, comprising: applying a solder resist composition according to any one of <1> to <11> to a substrate; and patterning the solder resist composition The steps of exposure.

<15>一種固體攝像元件、液晶顯示裝置或有機EL顯示裝置的製造方法,其包括:將如<1>至<11>中任一項所述的阻焊劑組成物應用於基板上的步驟;以及對上述阻焊劑組成物進行曝光的步驟。 <15> A solid-state imaging device, a liquid crystal display device, or a method of manufacturing an organic EL display device, comprising: the step of applying the solder resist composition according to any one of <1> to <11> to a substrate; And a step of exposing the above solder resist composition.

<16>如<1>至<11>中任一項所述的阻焊劑組成物,其更包括溶劑、鹼可溶性樹脂(較佳為總固體成分的30質量%~80質量%)、聚合起始劑、界面活性劑、增感劑、紫外線吸收劑、矽烷偶合劑、填料(較佳為總固體成分的1質量%~60質量%) 及分散劑的至少1種。 The solder resist composition according to any one of <1> to <11>, further comprising a solvent, an alkali-soluble resin (preferably 30% by mass to 80% by mass of the total solid content), and polymerization Starting agent, surfactant, sensitizer, ultraviolet absorber, decane coupling agent, filler (preferably 1% to 60% by mass of total solid content) And at least one of the dispersing agents.

<17>如<1>至<11>及<16>中任一項所述的阻焊劑組成物,其更包括溶劑、鹼可溶性樹脂及聚合起始劑。 The solder resist composition according to any one of <1> to <11>, further comprising a solvent, an alkali-soluble resin, and a polymerization initiator.

<18>如<1>至<11>、<16>及<17>中任一項所述的阻焊劑組成物,其中於使膜厚變成25μm時,波長1200nm下的膜的透過率為2%以下。 The solder resist composition according to any one of <1>, wherein the film has a transmittance of 2 at a wavelength of 1200 nm when the film thickness is changed to 25 μm. %the following.

<19>如<1>至<11>、<16>至<18>中任一項所述的阻焊劑組成物,其中25℃下的黏度為10mPa.s~3000mPa.s。 <19> The solder resist composition according to any one of <1> to <11>, wherein the viscosity at 25 ° C is 10 mPa. s~3000mPa. s.

<19>一種阻焊劑組成物的抗經時劣化劑,其由通式(1)表示。 <19> A time-dependent deterioration agent for a solder resist composition, which is represented by the formula (1).

通式(1)中,L為包含伸烷基與-O-的組合的基,Ac為(甲基)丙烯醯氧基。 In the formula (1), L is a group containing a combination of an alkylene group and -O-, and Ac is a (meth)acryloxy group.

可提供一種紅外線遮光性優異、且經時後的劣化少的阻焊劑組成物。 A solder resist composition which is excellent in infrared light shielding property and has little deterioration after time can be provided.

2‧‧‧大圖案 2‧‧‧ Large pattern

3‧‧‧微細圖案 3‧‧‧Micropattern

10‧‧‧矽基板 10‧‧‧矽 substrate

12‧‧‧攝像元件 12‧‧‧Photographic components

13‧‧‧層間絕緣膜 13‧‧‧Interlayer insulating film

14‧‧‧基極層 14‧‧‧ base layer

15R‧‧‧紅色的彩色濾光片 15R‧‧‧Red color filter

15G‧‧‧綠色的彩色濾光片 15G‧‧‧Green color filter

15B‧‧‧藍色的彩色濾光片 15B‧‧‧Blue color filter

16‧‧‧保護層 16‧‧‧Protective layer

17‧‧‧微透鏡 17‧‧‧Microlens

18‧‧‧遮光膜 18‧‧‧Shade film

20‧‧‧黏著劑 20‧‧‧Adhesive

22‧‧‧絕緣膜 22‧‧‧Insulation film

23‧‧‧金屬電極 23‧‧‧Metal electrodes

24‧‧‧阻焊劑層 24‧‧‧ solder resist layer

26‧‧‧內部電極 26‧‧‧Internal electrodes

27‧‧‧元件面電極 27‧‧‧Component surface electrode

30‧‧‧玻璃基板 30‧‧‧ glass substrate

40‧‧‧成像透鏡 40‧‧‧ imaging lens

41‧‧‧黏著劑 41‧‧‧Adhesive

42‧‧‧紅外線截止濾鏡 42‧‧‧Infrared cut filter

43‧‧‧黏著劑 43‧‧‧Adhesive

44‧‧‧遮光兼電磁遮罩 44‧‧‧Lighting and electromagnetic shielding

45‧‧‧黏著劑 45‧‧‧Adhesive

50‧‧‧透鏡架 50‧‧‧ lens holder

60‧‧‧焊料球 60‧‧‧ solder balls

70‧‧‧電路基板 70‧‧‧ circuit board

100‧‧‧固體攝像元件基板 100‧‧‧Solid imaging element substrate

200‧‧‧照相機模組 200‧‧‧ camera module

300‧‧‧矽基板 300‧‧‧矽 substrate

310‧‧‧圓形金屬電極 310‧‧‧Circular metal electrode

320‧‧‧遮光膜 320‧‧‧Shade film

330‧‧‧抗蝕劑層 330‧‧‧resist layer

340‧‧‧遮光膜 340‧‧‧Shade film

410‧‧‧基板 410‧‧‧Substrate

412、420‧‧‧透鏡 412, 420‧‧ lens

412a‧‧‧透鏡面 412a‧‧‧ lens surface

412b‧‧‧透鏡緣部 412b‧‧‧ lens edge

414‧‧‧遮光膜 414‧‧‧Shade film

414A‧‧‧遮光性塗佈層 414A‧‧‧Shutter coating layer

414a‧‧‧透鏡開口 414a‧‧‧ lens opening

450‧‧‧分配器 450‧‧‧Distributor

460、480‧‧‧模具 460, 480‧‧‧ mold

462、482‧‧‧凹部 462, 482 ‧ ‧ recess

470‧‧‧遮罩 470‧‧‧ mask

hν‧‧‧射入光 Hν‧‧‧Into the light

M‧‧‧成形材料 M‧‧‧ molding materials

圖1是表示具備本發明的實施形態的固體攝像元件的照相機 模組的構成的概略剖面圖。 1 is a view showing a camera including a solid-state imaging element according to an embodiment of the present invention; A schematic cross-sectional view of the configuration of the module.

圖2是本發明的實施形態的固體攝像元件的概略剖面圖。 Fig. 2 is a schematic cross-sectional view showing a solid-state image sensor according to an embodiment of the present invention.

圖3是實施例2-1及實施例2-2中所使用的基板A的概略剖面圖。 3 is a schematic cross-sectional view of a substrate A used in Example 2-1 and Example 2-2.

圖4是表示於基板A上形成有遮光膜的樣子的概略剖面圖。 4 is a schematic cross-sectional view showing a state in which a light shielding film is formed on a substrate A.

圖5是實施例2-1及實施例2-2中所使用的基板B的概略剖面圖。 Fig. 5 is a schematic cross-sectional view showing a substrate B used in Example 2-1 and Example 2-2.

圖6是表示於基板B上形成有遮光膜的樣子的概略剖面圖。 FIG. 6 is a schematic cross-sectional view showing a state in which a light shielding film is formed on a substrate B.

圖7是表示晶圓級透鏡陣列的一例的平面圖。 Fig. 7 is a plan view showing an example of a wafer level lens array.

圖8是圖7中所示的A-A線剖面圖。 Figure 8 is a cross-sectional view taken along line A-A of Figure 7.

圖9是表示將成為透鏡的成形材料供給至基板上的狀態的圖。 FIG. 9 is a view showing a state in which a molding material serving as a lens is supplied onto a substrate.

圖10A~圖10C是表示利用模具使透鏡於基板上成形的程序的圖。 10A to 10C are views showing a procedure of molding a lens on a substrate by a mold.

圖11A~圖11C是表示於形成有透鏡的基板上形成圖案狀的遮光膜的步驟的概略圖。 11A to 11C are schematic views showing a procedure of forming a pattern-shaped light-shielding film on a substrate on which a lens is formed.

圖12是表示晶圓級透鏡陣列的一例的剖面圖。 Fig. 12 is a cross-sectional view showing an example of a wafer level lens array.

圖13A~圖13C是表示遮光膜形成步驟的其他形態的概略圖。 13A to 13C are schematic views showing other aspects of the light shielding film forming step.

圖14A~圖14C是表示使透鏡於具有圖案狀的遮光膜的基板上成形的步驟的概略圖。 14A to 14C are schematic views showing a procedure of molding a lens on a substrate having a patterned light shielding film.

圖15是實施例中所使用的曝光中的圖案的圖式。 Fig. 15 is a diagram of a pattern in exposure used in the embodiment.

以下,對本發明的內容進行詳細說明。於本說明書中,使用「~」來表示的數值範圍是指包含「~」的前後所記載的數值作為下限值及上限值的範圍。 Hereinafter, the contents of the present invention will be described in detail. In the present specification, the numerical range expressed by "~" means a range including the numerical values described before and after "~" as the lower limit and the upper limit.

再者,於本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸,「(甲基)丙烯醯基」表示丙烯醯基及甲基丙烯醯基。另外,於本說明書中,「單量體」與「單體(monomer)」的含義相同。本發明中的單量體有別於寡聚物及聚合物,是指重量平均分子量為2,000以下的化合物。於本說明書中,所謂聚合性化合物,是指具有聚合性官能基的化合物,可為單量體,亦可為聚合物。所謂聚合性官能基,是指參與聚合反應的基。 In the present specification, "(meth)acrylate" means acrylate and methacrylate, "(meth)acrylic" means acrylic acid and methacrylic acid, and "(meth)acryloyl group" means propylene. Mercapto and methacrylonitrile. In addition, in this specification, "single quantity" has the same meaning as "monomer". The monomer in the present invention is different from the oligomer and the polymer, and means a compound having a weight average molecular weight of 2,000 or less. In the present specification, the polymerizable compound means a compound having a polymerizable functional group, and may be a monomer or a polymer. The polymerizable functional group means a group which participates in a polymerization reaction.

再者,於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基(原子團),並且亦包含具有取代基的基(原子團)。例如,所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 In addition, in the expression of the group (atomic group) in the present specification, the substituted and unsubstituted expressions are not described as including a group having no substituent (atomic group), and also a group having a substituent (atomic group). For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

另外,於本說明書中,黏度值是指25℃下的值。 In addition, in the present specification, the viscosity value means a value at 25 °C.

本發明中的紅外線是指波長為700nm~2500nm的電磁波。 The infrared ray in the present invention means an electromagnetic wave having a wavelength of from 700 nm to 2,500 nm.

對本發明的阻焊劑組成物(以下,有時稱為「本發明的組成物」)、硬化膜、固體攝像元件、液晶顯示裝置、有機EL顯示裝置、圖案硬化膜的製造方法、固體攝像元件、液晶顯示裝置或 有機EL顯示裝置的製造方法進行詳述。以下所記載的構成要件的說明有時基於本發明的具有代表性的實施方式來進行,但本發明並不限定於此種實施方式。 The solder resist composition of the present invention (hereinafter sometimes referred to as "the composition of the present invention"), a cured film, a solid-state imaging device, a liquid crystal display device, an organic EL display device, a method for producing a patterned cured film, a solid-state imaging device, Liquid crystal display device or The method of manufacturing the organic EL display device will be described in detail. The description of the constituent elements described below may be performed based on a representative embodiment of the present invention, but the present invention is not limited to such an embodiment.

本發明的阻焊劑組成物的特徵在於包括由通式(1)所表示的化合物及紅外線遮光性粒子。 The solder resist composition of the present invention is characterized by comprising a compound represented by the formula (1) and infrared light-blocking particles.

<由通式(1)所表示的化合物> <Compound represented by the general formula (1)>

本發明的組成物包括由通式(1)所表示的化合物。 The composition of the present invention includes a compound represented by the general formula (1).

通式(1)中,L分別為包含伸烷基與-O-的組合的基,Ac分別為(甲基)丙烯醯氧基。 In the formula (1), L is a group each containing a combination of an alkylene group and -O-, and each of Ac is a (meth)acryloxy group.

通式(1)中,L較佳為分別為包含-CH2-與-O-的組合的基,更佳為包含-C2H4-與-O-的組合的基,進而更佳為-C2H4-與-O-交替地重複的基。於此情況下,鍵結於L上的基及鍵結於Ac上的基較佳為均為-C2H4-。另外,L中的-C2H4-的數量較佳為1~4,更佳為2或3。 In the formula (1), L is preferably a group each comprising a combination of -CH 2 - and -O-, more preferably a group comprising a combination of -C 2 H 4 - and -O-, and more preferably a group in which -C 2 H 4 - is alternately repeated with -O-. In this case, the group bonded to L and the group bonded to Ac are preferably both -C 2 H 4 -. Further, the number of -C 2 H 4 - in L is preferably from 1 to 4, more preferably from 2 or 3.

通式(1)中,構成L的主鏈的原子數(Ac原子與O原子之間的鏈的原子數)較佳為分別為3~12,更佳為4~10。再者, 例如於L部分為-C2H4-O-C2H4-的情況下,構成L的主鏈的原子數為5。 In the general formula (1), the number of atoms constituting the main chain of L (the number of atoms of the chain between the Ac atom and the O atom) is preferably from 3 to 12, more preferably from 4 to 10. Further, for example, when the L moiety is -C 2 H 4 -OC 2 H 4 -, the number of atoms constituting the main chain of L is 5.

通式(1)中,較佳為4個L相同。 In the formula (1), it is preferred that four L's are the same.

Ac更佳為丙烯醯氧基。 Ac is more preferably an acryloxy group.

由通式(1)所表示的化合物的分子量較佳為400~1100,更佳為600~1000。 The molecular weight of the compound represented by the formula (1) is preferably from 400 to 1,100, more preferably from 600 to 1,000.

由通式(1)所表示的化合物的黏度較佳為100mPa.s~900mPa.s,更佳為200mPa.s~500mPa.s。 The viscosity of the compound represented by the general formula (1) is preferably 100 mPa. s~900mPa. s, more preferably 200mPa. s~500mPa. s.

相對於本發明的組成物的除溶劑以外的所有成分,較佳為以1質量%~30質量%的比例包含由通式(1)所表示的化合物,更佳為以5質量%~15質量%的比例包含由通式(1)所表示的化合物。由通式(1)所表示的化合物可僅使用1種,亦可使用2種以上。於2種以上的情況下,較佳為其合計量成為上述範圍。 It is preferable that all the components other than the solvent of the composition of the present invention contain the compound represented by the formula (1) in a ratio of from 1% by mass to 30% by mass, more preferably from 5% by mass to 15% by mass. The ratio of % contains the compound represented by the general formula (1). The compound represented by the formula (1) may be used alone or in combination of two or more. In the case of two or more types, it is preferred that the total amount thereof is within the above range.

以下表示本發明中所使用的由通式(1)所表示的化合物的較佳例,但本發明當然不限定於該些例子。 Preferred examples of the compound represented by the formula (1) used in the present invention are shown below, but the present invention is of course not limited to these examples.

作為上述化合物的例子,可例示東亞合成公司製造的M-460等。 As an example of the above-mentioned compound, M-460 manufactured by Toagosei Co., Ltd., etc. can be illustrated.

本發明的組成物亦可含有由上述通式(1)所表示的化合物以外的聚合性化合物。 The composition of the present invention may contain a polymerizable compound other than the compound represented by the above formula (1).

作為其他聚合性化合物,具體而言,自具有至少1個, 較佳為2個以上的末端乙烯性不飽和鍵的化合物中選擇。此種化合物群於該產業領域中廣為人知,於本發明中可無特別限定地使用該些化合物。該些化合物例如可為單體,預聚物,即二聚體、三聚體及寡聚物,或該些的混合物以及該些的多聚體等化學形態的任一種。本發明中的聚合性化合物可單獨使用一種,亦可併用2種以上。 As another polymerizable compound, specifically, it has at least one, It is preferably selected from compounds having two or more terminal ethylenically unsaturated bonds. Such a compound group is widely known in the industrial field, and these compounds can be used without particular limitation in the present invention. These compounds may be, for example, any of the chemical forms such as monomers, prepolymers, i.e., dimers, trimers, and oligomers, or mixtures thereof, and multimers thereof. The polymerizable compound in the invention may be used alone or in combination of two or more.

更具體而言,作為單體及其預聚物的例子,可列舉不飽和羧酸(例如丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、順丁烯二酸等)或其酯類、醯胺類、以及該些的多聚體,較佳為不飽和羧酸與脂肪族多元醇化合物的酯、及不飽和羧酸與脂肪族多元胺化合物的醯胺類、以及該些的多聚體。另外,亦可適宜地使用具有羥基或胺基、巰基等親核性取代基的不飽和羧酸酯或醯胺類,與單官能或多官能異氰酸酯類或者環氧類的加成反應物,或者與單官能或多官能的羧酸的脫水縮合反應物等。另外,具有異氰酸酯基或環氧基等親電子性取代基的不飽和羧酸酯或醯胺類,與單官能或多官能的醇類、胺類、硫醇類的加成反應物;以及具有鹵基或甲苯磺醯基氧基等脫離性取代基的不飽和羧酸酯或醯胺類,與單官能或多官能的醇類、胺類、硫醇類的取代反應物亦合適。另外,作為其他例,亦可使用取代成不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯基醚、烯丙醚等的化合物群來代替上述不飽和羧酸。 More specifically, examples of the monomer and the prepolymer thereof include an unsaturated carboxylic acid (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or Esters, guanamines, and multimers thereof, preferably esters of an unsaturated carboxylic acid and an aliphatic polyol compound, and guanamines of an unsaturated carboxylic acid and an aliphatic polyamine compound, and Multimer. Further, an unsaturated carboxylic acid ester or a guanamine having a nucleophilic substituent such as a hydroxyl group, an amine group or a fluorenyl group, and an addition reaction product with a monofunctional or polyfunctional isocyanate or epoxy group may be suitably used, or A dehydration condensation reaction with a monofunctional or polyfunctional carboxylic acid or the like. Further, an unsaturated carboxylic acid ester or guanamine having an electrophilic substituent such as an isocyanate group or an epoxy group, and an addition reaction product with a monofunctional or polyfunctional alcohol, an amine or a thiol; An unsaturated carboxylic acid ester or a decylamine which is a derivatizing substituent such as a halogen group or a tosylhydryloxy group, and a substituted reactant of a monofunctional or polyfunctional alcohol, an amine or a thiol are also suitable. Further, as another example, a group of compounds substituted with a vinylbenzene derivative such as an unsaturated phosphonic acid or styrene, a vinyl ether or an allyl ether may be used instead of the above unsaturated carboxylic acid.

作為該些的具體的化合物,於本發明中亦可適宜地使用 日本專利特開2009-288705號公報的段落號0095~段落號0108中所記載的化合物。 As the specific compound, these can also be suitably used in the present invention. The compound described in Paragraph No. 0095 to Paragraph No. 0108 of Japanese Laid-Open Patent Publication No. 2009-288705.

另外,作為上述聚合性化合物,聚合性單體為如下的化合物亦較佳:具有至少1個可進行加成聚合的乙烯基,且於常壓下具有100℃以上的沸點的含有乙烯性不飽和基的化合物。作為其例,可列舉:聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯酸苯氧基乙酯等單官能的丙烯酸酯或甲基丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成者,如日本專利特公昭48-41708號、日本專利特公昭50-6034號、日本專利特開昭51-37193號各公報中所記載的(甲基)丙烯酸胺基甲酸酯類,日本專利特開昭48-64183號、日本專利特公昭49-43191號、日本專利特公昭52-30490號各公報中所記載的聚酯丙烯酸酯類,作為環氧樹脂與(甲基)丙烯酸的反應產物的丙烯酸環氧酯類等多官能的丙烯酸酯或甲基丙烯酸酯、以及該些的混合物。 Further, as the polymerizable compound, the polymerizable monomer is preferably a compound having at least one vinyl group capable of undergoing addition polymerization and having a boiling point of 100 ° C or higher at normal pressure. Base compound. Examples thereof include monofunctional acrylates or methacrylates such as polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate. Polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol IV (Meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexane diol (meth) acrylate, trimethylolpropane tri (propylene oxypropyl propyl) (meth)acrylic acid after addition of ethylene oxide or propylene oxide to a polyfunctional alcohol, such as ether, tris(propylene methoxyethyl) isomeric cyanurate, glycerin or trimethylolethane The esterification of the (meth)acrylic acid urethanes as described in the Japanese Patent Publication No. Sho-48-41708, the Japanese Patent Publication No. Sho. Japanese Patent Laid-Open No. 48-64183, Japanese Patent Publication No. Sho 49-43191, and Japanese Patent Publication No. Sho 52-30490 Polyester acrylates described as a reaction product of an epoxy resin and (meth) acrylic acid esters of polyfunctional epoxy acrylic acrylates or methacrylates, and a mixture of these.

亦可列舉使多官能羧酸與(甲基)丙烯酸縮水甘油酯等具有環狀醚基及乙烯性不飽和基的化合物進行反應而獲得的多官能 (甲基)丙烯酸酯等。 Further, a polyfunctional compound obtained by reacting a polyfunctional carboxylic acid with a compound having a cyclic ether group or an ethylenically unsaturated group such as glycidyl (meth)acrylate may be mentioned. (Meth) acrylate, etc.

另外,作為其他較佳的聚合性化合物,亦可使用日本專利特開2010-160418號公報、日本專利特開2010-129825號公報、日本專利第4364216公報等中所記載的具有茀環、且具有二官能以上的乙烯性聚合性基的化合物,酚酞基(cardo)樹脂。 In addition, as the other preferable polymerizable compound, an anthracene ring described in Japanese Patent Laid-Open No. 2010-160418, Japanese Patent Laid-Open No. 2010-129825, and Japanese Patent No. 4364216, and the like can be used. A compound having a difunctional or higher ethylenic polymerizable group, a cardo resin.

另外,作為於常壓下具有100℃以上的沸點、且具有至少一個可進行加成聚合的乙烯性不飽和基的化合物,日本專利特開2008-292970號公報的段落號[0254]~段落號[0257]中所記載的化合物亦合適。 Further, as a compound having a boiling point of 100 ° C or higher and having at least one ethylenically unsaturated group capable of undergoing addition polymerization under normal pressure, paragraph number [0254] to paragraph number of JP-A-2008-292970 The compounds described in [0257] are also suitable.

除上述以外,亦可適宜地使用由下述通式(MO-1)~通式(MO-5)所表示的自由基聚合性單體。再者,式中,當T為氧伸烷基時,碳原子側的末端鍵結於R上。 In addition to the above, a radical polymerizable monomer represented by the following formula (MO-1) to formula (MO-5) can be suitably used. Further, in the formula, when T is an oxygen-extended alkyl group, the terminal on the carbon atom side is bonded to R.

R:,,,,-OH,-CH3 R: , , , ,-OH,-CH 3

T:-(CH2)m-,-OCH2-,-OCH2CH2-,-OCH2CH2CH2,-OCH2CH2CH2CH2- -O(CO)-(CH2)m-,-COO-(CH2)m-,-OCH(CH3)-CH2-,-OCH2CH(CH3)- T: -(CH 2 ) m -, -OCH 2 -, -OCH 2 CH 2 -, -OCH 2 CH 2 CH 2 , -OCH 2 CH 2 CH 2 CH 2 - -O(CO)-(CH 2 ) m -, -COO-(CH 2 ) m -, -OCH(CH 3 )-CH 2 -, -OCH 2 CH(CH 3 )-

Z:-O-, Z:-O-,

上述通式中,n為0~14,m為1~8。一分子內存在多 個的R、T彼此可相同,亦可不同。 In the above formula, n is 0 to 14, and m is 1 to 8. There are more than one molecule The R and T of each one may be the same or different.

於由上述通式(MO-1)~通式(MO-5)所表示的各自由基聚合性單體中,多個R之中的至少1個表示由-OC(=O)CH=CH2、或-OC(=O)C(CH3)=CH2所表示的基。 In each of the radical polymerizable monomers represented by the above formula (MO-1) to formula (MO-5), at least one of the plurality of R represents -OC(=O)CH=CH 2 or a group represented by -OC(=O)C(CH 3 )=CH 2 .

作為由上述通式(MO-1)~通式(MO-5)所表示的自由基聚合性單體的具體例,於本發明中亦可適宜地使用日本專利特開2007-269779號公報的段落號0248~段落號0251中所記載的化合物。 Specific examples of the radically polymerizable monomer represented by the above formula (MO-1) to (MO-5) may be suitably used in the present invention, as disclosed in JP-A-2007-269779. The compound described in Paragraph No. 0248 to Paragraph No. 0251.

另外,於日本專利特開平10-62986號公報中作為通式(1)及通式(2)且與其具體例一同記載的化合物亦可用作聚合性化合物,上述化合物是於上述多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成的化合物。 Further, a compound described in the general formula (1) and the general formula (2) together with the specific examples thereof can also be used as a polymerizable compound, and the above compound is among the above polyfunctional alcohols, in the above-mentioned Japanese Patent Publication No. Hei 10-62986. A compound obtained by (meth)acrylation after addition of ethylene oxide or propylene oxide.

其中,作為聚合性化合物,較佳為二季戊四醇三丙烯酸酯(市售品為KAYARAD D-330;日本化藥股份有限公司製造),二季戊四醇四丙烯酸酯(市售品為KAYARAD D-320;日本化藥股份有限公司製造),二季戊四醇五(甲基)丙烯酸酯(市售品為KAYARAD D-310;日本化藥股份有限公司製造),二季戊四醇六(甲基)丙烯酸酯(市售品為KAYARAD DPHA;日本化藥股份有限公司製造),及該些的(甲基)丙烯醯基介於乙二醇、丙二醇殘基之間的結構。亦可使用該些的寡聚物型。 Among them, as the polymerizable compound, dipentaerythritol triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.) and dipentaerythritol tetraacrylate (commercially available as KAYARAD D-320; Japan) are preferred. Chemical Pharmaceutical Co., Ltd.), dipentaerythritol penta (meth) acrylate (commercially available as KAYARAD D-310; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa(meth) acrylate (commercially available) KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., and the structure in which the (meth) acrylonitrile group is between ethylene glycol and propylene glycol residues. These oligomer types can also be used.

作為聚合性化合物,亦可為具有羧基、磺酸基、磷酸基等酸基的多官能單體。因此,如上所述,只要乙烯性化合物是如 其為混合物的情況般具有未反應的羧基者,則可直接利用該乙烯性化合物,於必要時,亦可使上述乙烯性化合物的羥基與非芳香族羧酸酐進行反應而導入酸基。於此情況下,作為所使用的非芳香族羧酸酐的具體例,可列舉:四氫鄰苯二甲酸酐、烷基化四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、烷基化六氫鄰苯二甲酸酐、丁二酸酐、順丁烯二酸酐。 The polymerizable compound may be a polyfunctional monomer having an acid group such as a carboxyl group, a sulfonic acid group or a phosphoric acid group. Therefore, as described above, as long as the ethylenic compound is as When it is an unreacted carboxyl group in the case of a mixture, the ethylenic compound can be used as it is, and if necessary, the hydroxyl group of the above-mentioned ethylenic compound can be reacted with a non-aromatic carboxylic anhydride to introduce an acid group. In this case, specific examples of the non-aromatic carboxylic anhydride to be used include tetrahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and alkyl group. Hexahydrophthalic anhydride, succinic anhydride, maleic anhydride.

於本發明中,具有酸基的單體為脂肪族聚羥基化合物與不飽和羧酸的酯,較佳為使脂肪族聚羥基化合物的未反應的羥基與非芳香族羧酸酐進行反應而具有酸基的多官能單體,特佳為於該酯中,脂肪族聚羥基化合物為季戊四醇及/或二季戊四醇者。作為市售品,例如可列舉作為東亞合成股份有限公司製造的多元酸改質丙烯酸寡聚物的M-510、M-520等。 In the present invention, the monomer having an acid group is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and it is preferred to react an unreacted hydroxyl group of the aliphatic polyhydroxy compound with a non-aromatic carboxylic anhydride to have an acid. The polyfunctional monomer is particularly preferred in the ester, and the aliphatic polyhydroxy compound is pentaerythritol and/or dipentaerythritol. As a commercial item, M-510, M-520, etc. which are polyacid-acid-modified acrylic oligomer manufactured by the East Asia Synthetic Co., Ltd. are mentioned, for example.

具有酸基的多官能單體的較佳的酸值為0.1mg-KOH/g~40mg-KOH/g,特佳為5mg-KOH/g~30mg-KOH/g。若多官能單體的酸值過低,則顯影溶解特性下降,若多官能單體的酸值過高,則製造或處理變得困難,光聚合性能下降,且畫素的表面平滑性等硬化性變得欠佳。因此,當併用2種以上酸基不同的多官能單體時、或當併用不含酸基的多官能單體時,必須以整體的多官能單體的酸值處於上述範圍的方式進行調整。 A preferred acid value of the polyfunctional monomer having an acid group is from 0.1 mg-KOH/g to 40 mg-KOH/g, particularly preferably from 5 mg-KOH/g to 30 mg-KOH/g. When the acid value of the polyfunctional monomer is too low, the development and dissolution characteristics are lowered. When the acid value of the polyfunctional monomer is too high, production or handling becomes difficult, photopolymerization performance is lowered, and surface smoothness of the pixel is hardened. Sex becomes less good. Therefore, when two or more kinds of polyfunctional monomers having different acid groups are used in combination, or when a polyfunctional monomer having no acid group is used in combination, it is necessary to adjust so that the acid value of the entire polyfunctional monomer is in the above range.

另外,作為聚合性單體,較佳為包含具有己內酯結構的多官能性單量體。 Further, as the polymerizable monomer, a polyfunctional monomeric body having a caprolactone structure is preferable.

作為具有己內酯結構的多官能性單量體,只要其分子內 具有己內酯結構,則並無特別限定,例如可列舉如下的ε-己內酯改質多官能(甲基)丙烯酸酯,即藉由將三羥甲基乙烷、二-三羥甲基乙烷、三羥甲基丙烷、二-三羥甲基丙烷、季戊四醇、二季戊四醇、三季戊四醇、甘油、二甘油、三羥甲基三聚氰胺等多元醇與(甲基)丙烯酸及ε-己內酯加以酯化而獲得的ε-己內酯改質多官能(甲基)丙烯酸酯。其中,較佳為具有由下述式(1)所表示的己內酯結構的多官能性單量體。 As a polyfunctional single body having a caprolactone structure, as long as it is intramolecular The caprolactone structure is not particularly limited, and examples thereof include ε-caprolactone-modified polyfunctional (meth) acrylate by trimethylolethane and di-trimethylol. Polyols such as ethane, trimethylolpropane, di-trimethylolpropane, pentaerythritol, dipentaerythritol, tripentaerythritol, glycerin, diglycerin, trimethylol melamine, and (meth)acrylic acid and ε-caprolactone The ε-caprolactone obtained by esterification is modified with a polyfunctional (meth) acrylate. Among them, a polyfunctional mono-weight having a caprolactone structure represented by the following formula (1) is preferred.

式中,6個R全部為由下述式(2)所表示的基,或者6個R中的1個~5個為由下述式(2)所表示的基,剩餘為由下述式(3)所表示的基。 In the formula, all of the six R's are represented by the following formula (2), or one to five of the six R's are represented by the following formula (2), and the remainder is represented by the following formula: (3) The base represented.

式中,R1表示氫原子或甲基,m表示1或2的整數,「*」表示結合鍵。 In the formula, R 1 represents a hydrogen atom or a methyl group, m represents an integer of 1 or 2, and "*" represents a bond.

式中,R1表示氫原子或甲基,「*」表示結合鍵。 In the formula, R 1 represents a hydrogen atom or a methyl group, and "*" represents a bond.

具有此種己內酯結構的多官能性單量體例如可列舉:作為KAYARAD DPCA系列而由日本化藥(股份)所銷售的DPCA-20(上述式(1)~式(3)中,m=1、由式(2)所表示的基的數量=2、R1均為氫原子的化合物)、DPCA-30(上述式(1)~式(3)中,m=1、由式(2)所表示的基的數量=3、R1均為氫原子的化合物)、DPCA-60(上述式(1)~式(3)中,m=1、由式(2)所表示的基的數量=6、R1均為氫原子的化合物)、DPCA-120(上述式(1)~式(3)中,m=2、由式(2)所表示的基的量=6、R1均為氫原子的化合物)等。 For example, the DPCA-20 sold by Nippon Kayaku Co., Ltd. as a KAYARAD DPCA series (in the above formula (1) to formula (3), m) =1, the number of groups represented by the formula (2) = 2, the compound in which R 1 is a hydrogen atom), and DPCA-30 (in the above formula (1) to formula (3), m=1, the formula ( 2) the number of the groups represented by the formula = 3, the compound in which R 1 is a hydrogen atom), DPCA-60 (in the above formulas (1) to (3), m = 1, the group represented by the formula (2) The number = 6 and the compound in which R 1 is a hydrogen atom), DPCA-120 (in the above formulas (1) to (3), m = 2, the amount of the group represented by the formula (2) = 6, R 1 is a compound of a hydrogen atom) and the like.

於本發明中,具有己內酯結構的多官能性單量體可單獨使用、或將2種以上混合使用。 In the present invention, the polyfunctional monolith having a caprolactone structure may be used singly or in combination of two or more.

另外,作為本發明中的特定單體,選自由下述通式(i)或通式(ii)所表示的化合物的群組中的至少1種亦較佳。 Further, as the specific monomer in the present invention, at least one selected from the group consisting of compounds represented by the following general formula (i) or (ii) is also preferable.

上述通式(i)及通式(ii)中,E分別獨立地表示-((CH2)yCH2O)-、或-((CH2)yCH(CH3)O)-,y分別獨立地表示0~10的整數,X分別獨立地表示丙烯醯基、甲基丙烯醯基、氫原子、或羧基。 In the general formula (i) and Formula (ii), E each independently represent - ((CH 2) yCH 2 O) -, or - ((CH 2) yCH ( CH 3) O) -, y is independently The ground represents an integer of 0 to 10, and X each independently represents an acryloyl group, a methacryloyl group, a hydrogen atom, or a carboxyl group.

上述通式(i)中,丙烯醯基及甲基丙烯醯基的合計為3個或4個,m分別獨立地表示0~10的整數,各m的合計為0~40的整數。其中,當各m的合計為0時,X中的任一個為羧基。 In the above formula (i), the total of the acryl fluorenyl group and the methacryl fluorenyl group is three or four, and m each independently represents an integer of 0 to 10, and the total of each m is an integer of from 0 to 40. However, when the total of each m is 0, any one of X is a carboxyl group.

上述通式(ii)中,丙烯醯基及甲基丙烯醯基的合計為5個或6個,n分別獨立地表示0~10的整數,各n的合計為0~60的整數。其中,當各n的合計為0時,X中的任一個為羧基。 In the above formula (ii), the total of the acrylonitrile group and the methacryl group is 5 or 6, and n each independently represents an integer of 0 to 10, and the total of each n is an integer of 0 to 60. However, when the total of each n is 0, any one of X is a carboxyl group.

上述通式(i)中,m較佳為0~6的整數,更佳為0~4的整數。另外,各m的合計較佳為2~40的整數,更佳為2~16的整數,特佳為4~8的整數。 In the above formula (i), m is preferably an integer of 0 to 6, more preferably an integer of 0 to 4. Further, the total of each m is preferably an integer of 2 to 40, more preferably an integer of 2 to 16, and particularly preferably an integer of 4 to 8.

上述通式(ii)中,n較佳為0~6的整數,更佳為0~4的整數。另外,各n的合計較佳為3~60的整數,更佳為3~24的整數,特佳為6~12的整數。 In the above formula (ii), n is preferably an integer of 0 to 6, more preferably an integer of 0 to 4. Further, the total of each n is preferably an integer of 3 to 60, more preferably an integer of 3 to 24, and particularly preferably an integer of 6 to 12.

另外,通式(i)或通式(ii)中的-((CH2)yCH2O)-、或-((CH2)yCH(CH3)O)-較佳為氧原子側的末端與X鍵結的形態。 Further, -((CH 2 )yCH 2 O)- or -((CH 2 )yCH(CH 3 )O)- in the formula (i) or the formula (ii) is preferably an end on the oxygen atom side The shape of the knot with X.

由上述通式(i)或通式(ii)所表示的化合物可單獨使用1種,亦可併用2種以上。尤其,較佳為於通式(ii)中,6個X均為丙烯醯基的形態。 The compound represented by the above formula (i) or (ii) may be used alone or in combination of two or more. In particular, it is preferred that in the general formula (ii), six Xs are in the form of an acrylonitrile group.

另外,作為由通式(i)或通式(ii)所表示的化合物於特定單體中的總含量,較佳為20質量%以上,更佳為50質量%以上。 In addition, the total content of the compound represented by the general formula (i) or the general formula (ii) in a specific monomer is preferably 20% by mass or more, and more preferably 50% by mass or more.

由上述通式(i)或通式(ii)所表示的化合物可由作為先前公知的步驟的如下步驟來合成:藉由使季戊四醇或二季戊四醇與環氧乙烷或環氧丙烷進行開環加成反應來使開環骨架鍵結的步驟、以及使開環骨架的末端羥基與例如(甲基)丙烯醯氯進行反應來導入(甲基)丙烯醯基的步驟。各步驟是廣為人知的步驟,本領域從業人員可容易地合成由通式(i)或通式(ii)所表示的化合物。 The compound represented by the above formula (i) or formula (ii) can be synthesized by the following steps as a previously known step: ring-opening addition of pentaerythritol or dipentaerythritol with ethylene oxide or propylene oxide The step of reacting the ring-opening skeleton and the step of introducing a (meth)acryl fluorenyl group by reacting a terminal hydroxyl group of the ring-opening skeleton with, for example, (meth)acryloyl chloride. Each step is a well-known step, and a person represented by the formula (i) or the formula (ii) can be easily synthesized by a person skilled in the art.

由上述通式(i)、通式(ii)所表示的化合物之中,更佳為季戊四醇衍生物及/或二季戊四醇衍生物。 Among the compounds represented by the above formula (i) and formula (ii), a pentaerythritol derivative and/or a dipentaerythritol derivative are more preferred.

具體而言,可列舉由下述式(a)~式(f)所表示的化合物(以下,亦稱為「例示化合物(a)~例示化合物(f)」),其中,較佳為例示化合物(a)、例示化合物(b)、例示化合物(e)、例示化合物(f)。 Specifically, a compound represented by the following formula (a) to formula (f) (hereinafter also referred to as "exemplary compound (a) to exemplary compound (f)")), preferably an exemplified compound (a), exemplified compound (b), exemplified compound (e), and exemplified compound (f).

作為由通式(i)、通式(ii)所表示的特定單體的市售品,例如可列舉:沙多瑪(Sartomer)公司製造的作為具有4個伸乙氧基鏈的四官能丙烯酸酯的SR-494、日本化藥股份有限公司製造的作為具有6個伸戊氧基鏈的六官能丙烯酸酯的DPCA-60、作為具有3個異伸丁氧基鏈的三官能丙烯酸酯的TPA-330等。 As a commercial item of the specific monomer represented by the general formula (i) and the general formula (ii), for example, a tetrafunctional acrylic acid having four ethylene ethoxylate chains can be exemplified by Sartomer Co., Ltd. Ester SR-494, DPCA-60 manufactured by Nippon Kayaku Co., Ltd. as a hexafunctional acrylate having 6 pentyloxy chains, TPA as a trifunctional acrylate having 3 extended-butoxy chains -330 and so on.

另外,作為聚合性化合物,如日本專利特公昭48-41708號公報、日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類,或日本專利特公昭58-49860號公報、日本專利 特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報中記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類亦合適。進而,藉由使用日本專利特開昭63-277653號公報、日本專利特開昭63-260909號公報、日本專利特開平1-105238號公報中所記載的分子內具有胺基結構或硫化物結構的加成聚合性化合物類作為聚合性化合物,可獲得感光速度非常優異的組成物。 In addition, as a polymerizable compound, for example, Japanese Patent Publication No. Sho 48-41708, Japanese Patent Laid-Open No. Sho 51-37193, Japanese Patent Publication No. Hei 2-32293, and Japanese Patent Publication No. Hei 2-16765 The urethane amides described, or Japanese Patent Publication No. Sho 58-49860, Japanese Patent A urethane compound having an ethylene oxide skeleton described in Japanese Patent Publication No. Sho 62-39417, and Japanese Patent Publication No. Sho 62-39418 is also suitable. In addition, an amine-based structure or a sulfide structure is described in the molecule as described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. As the polymerizable compound, an addition polymerizable compound can obtain a composition excellent in photospeed.

作為聚合性化合物的市售品,可列舉:胺基甲酸酯寡聚物UAS-10、UAB-140(山陽國策紙漿(Sanyo Kokusaku Pulp)公司製造),UA-7200(新中村化學公司製造),DPHA-40H(日本化藥公司製造),UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共榮社製造)等。 As a commercial product of a polymerizable compound, urethane oligomer UAS-10, UAB-140 (made by Sanyo Kokusaku Pulp company), UA-7200 (made by Shin-Nakamura Chemical Co., Ltd.) , DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Co., Ltd.).

作為聚合性化合物,同一分子內具有2個以上的巰基(SH)的多官能硫醇化合物亦合適。尤其,較佳為由下述通式(I)所表示的化合物。 As the polymerizable compound, a polyfunctional thiol compound having two or more mercapto groups (SH) in the same molecule is also suitable. In particular, a compound represented by the following formula (I) is preferred.

式中,R1表示烷基,R2表示可含有碳以外的原子的n價的脂 肪族基,R0表示並非H的烷基,n表示2~4。 In the formula, R 1 represents an alkyl group, R 2 represents an n-valent aliphatic group which may contain an atom other than carbon, R 0 represents an alkyl group which is not H, and n represents 2 to 4.

若具體地例示由上述通式(I)所表示的多官能硫醇化合物,則可列舉具有下述的結構式的1,4-雙(3-巰基丁醯氧基)丁烷[式(II)]、1,3,5-三(3-巰基丁氧基乙基)-1,3,5-三嗪-2,4,6(1H,3H5H)-三酮[式(III)]、及季戊四醇四(3-巰基丁酸酯)[式(IV)]等。該些多官能硫醇可使用1種、或將多種組合使用。 Specific examples of the polyfunctional thiol compound represented by the above formula (I) include 1,4-bis(3-mercaptobutyloxy)butane having the following structural formula [Formula (II) )], 1,3,5-tris(3-mercaptobutoxyethyl)-1,3,5-triazine-2,4,6(1H,3H5H)-trione [formula (III)], And pentaerythritol tetrakis(3-mercaptobutyrate) [formula (IV)] and the like. These polyfunctional thiols may be used alone or in combination of two or more.

關於組成物中的多官能硫醇的調配量,理想的是相對於除溶劑以外的總固體成分,以0.3wt%(重量百分比)~8.9wt%,更佳為0.8wt%~6.4wt%的範圍來添加。藉由添加多官能硫醇, 可使組成物的穩定性、臭氣、感光度、解析性、顯影性、密接性等變佳。 The compounding amount of the polyfunctional thiol in the composition is desirably 0.3% by weight to 8.9% by weight, more preferably 0.8% by weight to 6.4% by weight based on the total solid content other than the solvent. Range to add. By adding a polyfunctional thiol, The stability, odor, sensitivity, resolution, developability, adhesion, and the like of the composition can be improved.

關於該些聚合性化合物,其結構、單獨使用或併用、添加量等使用方法的詳細情況可結合組成物的最終的性能設計而任意地設定。例如,就感光度的觀點而言,較佳為每1分子的不飽和基含量多的結構,於多數情況下,較佳為二官能以上。另外,就提高著色硬化膜的強度的觀點而言,可為三官能以上的化合物,進而,藉由併用不同的官能數.不同的聚合性基(例如丙烯酸酯、甲基丙烯酸酯、苯乙烯系化合物、乙烯基醚系化合物)的化合物,而調節感光度與強度兩者的方法亦有效。進而,就可調節組成物的顯影性、並可獲得優異的圖案形成性能的觀點而言,較佳為併用三官能以上且環氧乙烷鏈長不同的聚合性化合物。另外,對於與組成物中所含有的其他成分(例如光聚合起始劑、著色劑(顏料)、黏合劑聚合物等)的相容性、分散性而言,聚合性化合物的選擇.使用法亦是重要的因素,例如,有時可藉由使用低純度化合物、或併用2種以上的低純度化合物來提昇相容性。另外,就提昇與基板等的硬質表面的密接性的觀點而言,亦可選擇特定的結構。 Regarding the polymerizable compounds, the details of the method of use, the use alone or in combination, the amount of addition, and the like can be arbitrarily set in combination with the final performance design of the composition. For example, from the viewpoint of sensitivity, a structure having a large content of an unsaturated group per molecule is preferable, and in many cases, a difunctional or higher is preferable. Further, from the viewpoint of improving the strength of the colored cured film, it may be a trifunctional or higher compound, and further, a different functional number may be used in combination. A method of adjusting both sensitivity and strength is also effective for a compound of a different polymerizable group (for example, an acrylate, a methacrylate, a styrene compound, or a vinyl ether compound). Further, from the viewpoint of adjusting the developability of the composition and obtaining excellent pattern formation performance, it is preferred to use a trifunctional or higher polymerizable compound having a different ethylene oxide chain length. Further, for the compatibility and dispersibility of other components (for example, a photopolymerization initiator, a colorant (pigment), a binder polymer, etc.) contained in the composition, a polymerizable compound is selected. The use method is also an important factor. For example, compatibility may be improved by using a low-purity compound or a combination of two or more low-purity compounds. Moreover, a specific structure can also be selected from the viewpoint of improving the adhesion to a hard surface such as a substrate.

本發明的組成物中的該些其他聚合性化合物較佳為80質量%以下,更佳為60質量%以下,進而更佳為40質量%以下,進而更佳為10質量%以下,特佳為實質上不含該些其他聚合性化合物。所謂實質上,例如為所有聚合性化合物的量的5質量%以 下,較佳為2質量%以下。 The other polymerizable compound in the composition of the present invention is preferably 80% by mass or less, more preferably 60% by mass or less, still more preferably 40% by mass or less, still more preferably 10% by mass or less, particularly preferably These other polymeric compounds are substantially absent. The substance is, for example, 5% by mass of the amount of all the polymerizable compounds. Next, it is preferably 2% by mass or less.

<紅外線遮光性粒子> <Infrared opaque particles>

本發明中所使用的紅外線遮光性粒子是指符合吸光度(500nm)/吸光度(900nm)<0.3的化合物。紅外線遮光性粒子較佳為用於曝光的光的透過性良好,就此種觀點而言,其他紅外線遮光性粒子較佳為自紅外線吸收染料、及紅外線吸收性無機顏料中選擇。本發明中所使用的紅外線遮光性粒子較佳為鎢化合物(含有鎢的化合物)。 The infrared ray blocking particles used in the present invention are compounds which satisfy the absorbance (500 nm) / absorbance (900 nm) < 0.3. The infrared light-shielding particles are preferably excellent in light permeability for exposure. From the viewpoint of the above, other infrared light-shielding particles are preferably selected from the group consisting of infrared absorbing dyes and infrared absorbing inorganic pigments. The infrared light-shielding particles used in the present invention are preferably a tungsten compound (a compound containing tungsten).

鎢化合物是對於紅外線(波長約為800nm~1200nm的光)的吸收高(即,對於紅外線的遮光性(遮蔽性)高),對於可見光的吸收低的紅外線遮光性粒子。因此,根據本發明的組成物,藉由含有鎢化合物,可形成紅外區域中的遮光性高、可見光區域中的透光性高的圖案。 The tungsten compound is an infrared light-shielding particle which has high absorption of infrared rays (light having a wavelength of about 800 nm to 1200 nm) (that is, high light-shielding property (shielding property) for infrared rays) and low absorption of visible light. Therefore, according to the composition of the present invention, by containing a tungsten compound, a pattern having high light-shielding property in the infrared region and high light transmittance in the visible light region can be formed.

另外,鎢化合物對於用於圖像形成的波長比高壓水銀燈、KrF、ArF等的曝光中所使用的可見區域短的光的吸收亦小。因此,藉由將此種鎢化合物與聚合起始劑、聚合性化合物及鹼可溶性黏合劑加以組合,可獲得優異的圖案。 Further, the tungsten compound has a small absorption of light shorter than the visible region used for exposure of a high pressure mercury lamp, KrF, ArF or the like for image formation. Therefore, an excellent pattern can be obtained by combining such a tungsten compound with a polymerization initiator, a polymerizable compound, and an alkali-soluble binder.

作為鎢化合物,可列舉氧化鎢系化合物、硼化鎢系化合物、硫化鎢系化合物等,更佳為由下述通式(2)所表示的氧化鎢系化合物。 Examples of the tungsten compound include a tungsten oxide compound, a tungsten boride-based compound, and a tungsten sulfide-based compound, and more preferably a tungsten oxide-based compound represented by the following formula (2).

MxWyOz…(2);M表示金屬,W表示鎢,O表示氧; 0.001≦x/y≦1.1;2.2≦z/y≦3.0。 M x W y O z (2); M represents a metal, W represents tungsten, O represents oxygen; 0.001 ≦ x / y ≦ 1.1; 2.2 ≦ z / y ≦ 3.0.

作為M的金屬,可列舉鹼金屬、鹼土金屬、Mg、Zr、Cr、Mn、Fe、Ru、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Al、Ga、In、Tl、Sn、Pb、Ti、Nb、V、Mo、Ta、Re、Be、Hf、Os、Bi,較佳為鹼金屬。M的金屬可為1種,亦可為2種以上。 Examples of the metal of M include an alkali metal, an alkaline earth metal, Mg, Zr, Cr, Mn, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga. In, T1, Sn, Pb, Ti, Nb, V, Mo, Ta, Re, Be, Hf, Os, Bi are preferably alkali metals. The metal of M may be one type or two or more types.

M較佳為鹼金屬,較佳為Rb或Cs,更佳為Cs。 M is preferably an alkali metal, preferably Rb or Cs, more preferably Cs.

藉由x/y為0.001以上,可充分地遮蔽紅外線,藉由x/y為1.1以下,可更確實地避免鎢化合物中生成雜質相。 When x/y is 0.001 or more, infrared rays can be sufficiently shielded, and by x/y being 1.1 or less, it is possible to more reliably prevent the formation of an impurity phase in the tungsten compound.

藉由z/y為2.2以上,可進一步提昇作為材料的化學穩定性,藉由z/y為3.0以下,可充分地遮蔽紅外線。 When z/y is 2.2 or more, the chemical stability of the material can be further improved, and by z/y being 3.0 or less, infrared rays can be sufficiently shielded.

作為由上述通式(2)所表示的氧化鎢系化合物的具體例,可列舉Cs0.33WO3、Rb0.33WO3、K0.33WO3、Ba0.33WO3等,較佳為Cs0.33WO3或Rb0.33WO3,更佳為Cs0.33WO3Specific examples of the tungsten oxide-based compound represented by the above formula (2) include Cs 0.33 WO 3 , Rb 0.33 WO 3 , K 0.33 WO 3 , Ba 0.33 WO 3 , etc., preferably Cs 0.33 WO 3 or Rb 0.33 WO 3 , more preferably Cs 0.33 WO 3 .

鎢化合物的平均粒徑較佳為800nm以下,更佳為400nm以下,進而更佳為200nm以下。藉由平均粒徑為此種範圍,鎢微粒子因光散射而難以遮斷可見光,因此可使可見光區域中的透光性變得更確實。就避免光散射的觀點而言,平均粒徑越小越佳,但就製造時的處理容易性等理由而言,鎢微粒子的平均粒徑通常為1nm以上。 The average particle diameter of the tungsten compound is preferably 800 nm or less, more preferably 400 nm or less, still more preferably 200 nm or less. Since the average particle diameter is in such a range, it is difficult for the tungsten fine particles to block visible light due to light scattering, so that the light transmittance in the visible light region can be made more reliable. In view of avoiding light scattering, the average particle diameter is preferably as small as possible, but the average particle diameter of the tungsten fine particles is usually 1 nm or more for reasons such as ease of handling during production.

相對於本發明的組成物的總固體成分質量,鎢化合物的 含量較佳為3質量%以上、20質量%以下,更佳為5質量%以上、10質量%以下。 Tungsten compound relative to the total solid component mass of the composition of the present invention The content is preferably 3% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 10% by mass or less.

另外,鎢化合物可使用2種以上。 Further, two or more kinds of tungsten compounds can be used.

鎢化合物可作為市售品而獲得,當鎢化合物例如為氧化鎢系化合物時,氧化鎢系化合物可藉由在惰性氣體環境或還原性氣體環境中對鎢化合物進行熱處理的方法而獲得(參照日本專利4096205號)。 The tungsten compound can be obtained as a commercially available product. When the tungsten compound is, for example, a tungsten oxide-based compound, the tungsten oxide-based compound can be obtained by heat-treating a tungsten compound in an inert gas atmosphere or a reducing gas atmosphere (refer to Japan). Patent No. 4096205).

另外,氧化鎢系化合物亦可作為例如住友金屬礦山股份有限公司製造的YMF-02等鎢微粒子的分散物而獲得。 Further, the tungsten oxide-based compound can be obtained, for example, as a dispersion of tungsten fine particles such as YMF-02 manufactured by Sumitomo Metal Mining Co., Ltd.

作為紅外線吸收染料,可列舉:花青色素、酞菁色素、萘酞菁色素、亞銨(immonium)色素、銨色素、喹啉鎓色素、吡喃鎓色素、Ni錯合物色素等金屬錯合物色素等。 Examples of the infrared absorbing dye include metal complexes such as cyanine dye, phthalocyanine dye, naphthalocyanine dye, immonium dye, ammonium dye, quinolinium dye, pyrylpurine dye, and Ni complex dye. Pigment and the like.

可用作紅外線遮光性粒子的色素亦可作為市售品而獲得,例如,可適宜地列舉以下的市售色素。 A coloring matter which can be used as an infrared light-shielding particle can also be obtained as a commercial item. For example, the following commercial coloring matter can be suitably used.

FEW化學(FEW Chemicals)公司製造的S0345、S0389、S0450、S0253、S0322、S0585、S0402、S0337、S0391、S0094、S0325、S0260、S0229、S0447、S0378、S0306、S0484 S0345, S0389, S0450, S0253, S0322, S0585, S0402, S0337, S0391, S0094, S0325, S0260, S0229, S0447, S0378, S0306, S0484 manufactured by FEW Chemicals

美國染料資源公司(American Dye Source,Inc.)製造的ADS795WS、ADS805WS、ADS819WS、ADS820WS、ADS823WS、ADS830WS、ADS850WS、ADS845MC、ADS870MC、ADS880MC、ADS890MC、ADS920MC、ADS990MC、ADS805PI、ADSW805PP、ADS810CO、ADS813MT、ADS815EI、ADS816EI、ADS818HT、 ADS819MT、ADS819MT、ADS821NH、ADS822MT、ADS838MT、ADS840MT、ADS905AM、ADS956BP、ADS1040P、ADS1040T、ADS1045P、ADS1040P、ADS1050P、ADS1065A、ADS1065P、ADS1100T、ADS1120F ADS795WS, ADS805WS, ADS819WS, ADS820WS, ADS823WS, ADS830WS, ADS850WS, ADS845MC, ADS870MC, ADS880MC, ADS890MC, ADS920MC, ADS990MC, ADS805PI, ADSW805PP, ADS810CO, ADS813MT, ADS815EI, manufactured by American Dye Source, Inc. ADS816EI, ADS818HT, ADS819MT, ADS819MT, ADS821NH, ADS822MT, ADS838MT, ADS840MT, ADS905AM, ADS956BP, ADS1040P, ADS1040T, ADS1045P, ADS1040P, ADS1050P, ADS1065A, ADS1065P, ADS1100T, ADS1120F

山本化成股份有限公司製造的YKR-4010、YKR-3030、YKR-3070、MIR-327、MIR-371、SIR-159、PA-1005、MIR-369、MIR-379、SIR-128、PA-1006、YKR-2080、MIR-370、YKR-3040、YKR-3081、SIR-130、MIR-362、YKR-3080、SIR-132、PA-1001 YKR-4010, YKR-3030, YKR-3070, MIR-327, MIR-371, SIR-159, PA-1005, MIR-369, MIR-379, SIR-128, PA-1006 manufactured by Yamamoto Chemicals Co., Ltd. , YKR-2080, MIR-370, YKR-3040, YKR-3081, SIR-130, MIR-362, YKR-3080, SIR-132, PA-1001

林原生物化學研究所製造的NK-123、NK-124、NK-1144、NK-2204、NK-2268、NK-3027、NKX-113、NKX-1199、NK-2674、NK-3508、NKX-114、NK-2545、NK-3555、NK-3509、NK-3519 NK-123, NK-124, NK-1144, NK-2204, NK-2268, NK-3027, NKX-113, NKX-1199, NK-2674, NK-3508, NKX-114 manufactured by Linyuan Biochemical Research Institute , NK-2545, NK-3555, NK-3509, NK-3519

該些色素之中,就耐熱性的觀點而言,較佳為酞菁色素及金屬錯合物色素。 Among these pigments, a phthalocyanine dye and a metal complex dye are preferred from the viewpoint of heat resistance.

該些染料可單獨使用,但為了使800nm-1200nm下的良好的遮光性顯現,亦可將該些染料中的對應於目的的2種以上混合使用。 These dyes may be used singly, but in order to exhibit good light-shielding properties at 800 nm to 1200 nm, two or more of these dyes may be used in combination for the purpose.

作為可用作其他紅外線遮光材的紅外線吸收性的無機顏料,例如可列舉氧化鋅、鉛白、鋅鋇白(lithopone)、氧化鈦、氧化鉻、氧化鐵、沈澱性硫酸鋇及重晶石粉、鉛丹、氧化鐵紅、鉻黃(chrome yellow)、鋅黃(鋅黃1種、鋅黃2種)、群青(Ultramarine Blue)、普魯士藍(Prussian Blue)(亞鐵氰化鉀(potassium ferrocyanide))、鋯石灰(Zircon Grey)、鐠黃 (Praseodymium yellow)、鉻鈦黃(chrome titan yellow)、鉻綠、孔雀綠、維多利亞綠(Victoria green)、鐵藍(iron blue)(與普魯士藍無關)、釩鋯藍(vanadium zirconium blue)、鉻錫紅(chrome tin pink)、錳紅(manganese pink)、橙紅(salmon pink)等,進而,作為黑色顏料,可使用包含選自由Co、Cr、Cu、Mn、Ru、Fe、Ni、Sn、Ti及Ag所組成的群組中的1種或2種以上的金屬元素的金屬氧化物、金屬氮化物或該些的混合物等。 Examples of the infrared absorbing inorganic pigment which can be used as another infrared light-shielding material include zinc oxide, lead white, lithopone, titanium oxide, chromium oxide, iron oxide, precipitated barium sulfate, and barite powder. Lead dan, iron oxide red, chrome yellow, zinc yellow (zinc yellow 1 species, zinc yellow 2 species), ultramarine blue, Prussian blue (potassium ferrocyanide) ), Zircon Grey, Yellow (Praseodymium yellow), chrome titan yellow, chrome green, malachite green, Victoria green, iron blue (not related to Prussian blue), vanadium zirconium blue, chromium Chrome tin pink, manganese red, salmon pink, etc., and further, as the black pigment, it may be selected from the group consisting of Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti. And a metal oxide, a metal nitride or a mixture of one or more metal elements in the group consisting of Ag and the like.

作為黑色顏料,就波長800nm-1200nm的紅外區域中的遮蔽性良好而言,較佳為作為含有氮化鈦的黑色顏料的鈦黑。 As the black pigment, titanium dioxide black which is a black pigment containing titanium nitride is preferable in terms of good shielding properties in an infrared region having a wavelength of 800 nm to 1200 nm.

鈦黑可藉由公知的方法而獲得,另外,作為市售品,例如可使用石原產業股份有限公司製造、赤穗化成股份有限公司製造、三菱材料電子化成(Jemco)股份有限公司製造、三菱材料股份有限公司製造、及三菱材料電子化成股份有限公司製造的鈦黑。 Titanium black can be obtained by a known method, and as a commercial product, for example, it can be manufactured by Ishihara Sangyo Co., Ltd., manufactured by Ako Chemical Co., Ltd., manufactured by Mitsubishi Materials Co., Ltd., and manufactured by Mitsubishi Materials. Titanium black manufactured by the company and manufactured by Mitsubishi Materials Electronics Co., Ltd.

所謂鈦黑,是指具有鈦原子的黑色粒子。較佳為低價氧化鈦或氮氮化鈦等。作為鈦黑粒子,為了提昇分散性、抑制凝聚性等,視需要可使用對表面進行了修飾的粒子。 The term "titanium black" refers to black particles having a titanium atom. It is preferably low-valent titanium oxide or titanium oxynitride. As the titanium black particles, particles which have been modified on the surface can be used as needed in order to improve dispersibility and suppress cohesiveness.

作為表面修飾法,可列舉藉由選自氧化矽、氧化鈦、氧化鍺、氧化鋁、氧化鎂、及氧化鋯中的1種以上來包覆表面的方法,另外,亦可藉由如日本專利特開2007-302836號公報的段落號[0010]~段落號[0027]中所示的撥水性物質來進行表面處理。 The surface modification method may be a method of coating a surface by one or more selected from the group consisting of cerium oxide, titanium oxide, cerium oxide, aluminum oxide, magnesium oxide, and zirconium oxide, and may also be a Japanese patent. The water-repellent substance shown in Paragraph No. [0010] to Paragraph No. [0027] of JP-A-2007-302836 is subjected to surface treatment.

作為鈦黑的製造方法,有如下的方法等:於還原環境下對二氧化鈦與金屬鈦的混合物進行加熱來進行還原的方法(日本 專利特開昭49-5432號公報);於含有氫的還原環境中對藉由四氯化鈦的高溫水解而獲得的超微細二氧化鈦進行還原的方法(日本專利特開昭57-205322號公報);於氨存在下對二氧化鈦或氫氧化鈦進行高溫還原的方法(日本專利特開昭60-65069號公報、日本專利特開昭61-201610號公報);使釩化合物附著於二氧化鈦或氫氧化鈦上,並於氨存在下進行高溫還原的方法(日本專利特開昭61-201610號公報);但並不限定於該些方法。 As a method for producing titanium black, there is a method of reducing a mixture of titanium oxide and titanium metal in a reducing environment (Japan) JP-A-49-5432); a method of reducing ultrafine titanium dioxide obtained by high-temperature hydrolysis of titanium tetrachloride in a reducing atmosphere containing hydrogen (Japanese Patent Laid-Open Publication No. SHO 57-205322) A method of subjecting titanium dioxide or titanium hydroxide to high-temperature reduction in the presence of ammonia (Japanese Patent Laid-Open Publication No. SHO 60-65069, Japanese Patent Application Laid-Open No. SHO 61-201610), and a vanadium compound attached to titanium oxide or titanium hydroxide A method of performing high-temperature reduction in the presence of ammonia (Japanese Patent Laid-Open No. 61-201610); however, it is not limited to these methods.

鈦黑的粒子的粒徑並無特別限制,但就分散性、著色性的觀點而言,較佳為3nm~2000nm,更佳為10nm~500nm。 The particle diameter of the titanium black particles is not particularly limited, but is preferably from 3 nm to 2,000 nm, and more preferably from 10 nm to 500 nm from the viewpoint of dispersibility and coloring property.

鈦黑的比表面積並無特別限定,但為了使利用撥水化劑對該鈦黑進行表面處理後的撥水性變成規定的性能,藉由布厄特(Brunauer-Emmett-Teller,BET)法所測定的值通常為5m2/g~150m2/g左右,特佳為20m2/g~100m2/g左右。 The specific surface area of the titanium black is not particularly limited, but the water repellency after the surface treatment of the titanium black by the water repellency agent is a predetermined property, and is determined by a Brunauer-Emmett-Teller (BET) method. value is usually about 5m 2 / g ~ 150m 2 / g, particularly preferably from about 20m 2 / g ~ 100m 2 / g.

關於用作其他紅外線遮光性粒子的無機顏料的粒徑,平均粒徑較佳為3nm~0.01mm,就分散性、遮光性、經時的沈澱性的觀點而言,平均粒徑較佳為10nm~1μm。 The average particle diameter of the inorganic pigment used as the other infrared light-shielding particles is preferably from 3 nm to 0.01 mm, and the average particle diameter is preferably 10 nm from the viewpoints of dispersibility, light-shielding property, and precipitation with time. ~1μm.

紅外線遮光性粒子可僅使用1種,亦可使用2種以上。相對於本發明的組成物的除溶劑以外的所有成分,較佳為以1質量%~30質量%的比例包含紅外線遮光性粒子,更佳為以5質量%~15質量%的比例包含紅外線遮光性粒子。 The infrared light-shielding particles may be used alone or in combination of two or more. It is preferable that all components other than the solvent of the composition of the present invention contain infrared light-shielding particles in a ratio of from 1% by mass to 30% by mass, and more preferably from 5% by mass to 15% by mass. Sex particles.

<其他成分> <Other ingredients>

本發明的組成物亦可包含溶劑、鹼可溶性樹脂、聚合起 始劑、界面活性劑、增感劑、紫外線吸收劑、矽烷偶合劑、填料及分散劑的至少1種,通常包含溶劑、鹼可溶性樹脂、聚合起始劑。進而,亦可包含選自界面活性劑、增感劑、紫外線吸收劑、矽烷偶合劑、及填料中的任意的成分。 The composition of the present invention may also contain a solvent, an alkali-soluble resin, and polymerization. At least one of a starter, a surfactant, a sensitizer, a UV absorber, a decane coupling agent, a filler, and a dispersant usually contains a solvent, an alkali-soluble resin, and a polymerization initiator. Further, any component selected from the group consisting of a surfactant, a sensitizer, a UV absorber, a decane coupling agent, and a filler may be contained.

進而,亦可併用交聯劑、硬化促進劑、彈性體、有機羧酸或有機羧酸酐、熱硬化促進劑、熱聚合抑制劑、塑化劑、著色劑(著色顏料或染料)、針對基板表面的密接促進劑及其他助劑類(例如導電性粒子、填充劑、消泡劑、阻燃劑、勻染劑、剝離促進劑、抗氧化劑、香料、表面張力調整劑、鏈轉移劑等)。 Further, a crosslinking agent, a hardening accelerator, an elastomer, an organic carboxylic acid or an organic carboxylic anhydride, a thermosetting accelerator, a thermal polymerization inhibitor, a plasticizer, a coloring agent (coloring pigment or dye), or a substrate surface may be used in combination. Adhesion promoter and other auxiliary agents (for example, conductive particles, fillers, antifoaming agents, flame retardants, leveling agents, peeling accelerators, antioxidants, perfumes, surface tension modifiers, chain transfer agents, etc.).

以下,對該些成分進行詳細說明。 Hereinafter, the components will be described in detail.

<溶劑> <solvent>

本發明的組成物通常可使用溶劑來構成。溶劑只要滿足各成分的溶解性或組成物的塗佈性,則基本上並無特別限制。另外,當製備本發明中的組成物時,亦可使用2種以上的溶劑。 The composition of the present invention can usually be constituted by using a solvent. The solvent is basically not particularly limited as long as it satisfies the solubility of each component or the coating property of the composition. Further, when the composition of the present invention is prepared, two or more solvents may be used.

作為溶劑,作為酯類,例如可適宜地列舉乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、乙酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、羥乙酸烷基酯(例如:羥乙酸甲酯、羥乙酸乙酯、羥乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-羥丙酸烷基酯類(例如:3-羥丙酸甲酯、3-羥丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2- 羥丙酸烷基酯類(例如:2-羥丙酸甲酯、2-羥丙酸乙酯、2-羥丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-氧基-2-甲基丙酸甲酯及2-氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等,另外,作為醚類,例如可適宜地列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等,另外,作為酮類,例如可適宜地列舉甲基乙基酮、環己酮、2-庚酮、3-庚酮等,另外,作為芳香族烴類,例如可適宜地列舉甲苯、二甲苯等。 As the solvent, examples of the esters include ethyl acetate, n-butyl acetate, isobutyl acetate, amyl acetate, isoamyl acetate, isobutyl acetate, butyl propionate, and isopropyl butyrate. Ester, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, alkyl glycolate (eg methyl hydroxyacetate, ethyl hydroxyacetate, butyl glycolate (eg methyl methoxyacetate) , ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), alkyl 3-hydroxypropionate (for example: 3-hydroxypropionate) Ester, ethyl 3-hydroxypropionate, etc. (eg methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3-ethoxypropionic acid Ester, etc.)), 2- Alkyl hydroxypropionates (for example: methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, propyl 2-hydroxypropionate, etc. (for example, methyl 2-methoxypropionate, 2-methoxy) Ethyl propyl propionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate), 2-oxy-2-methylpropanoic acid Esters and ethyl 2-oxy-2-methylpropanoate (for example, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), acetone Methyl ester, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, ethyl 2-oxobutanoate, ethyl 2-oxobutanoate, etc., in addition, as ethers For example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethyl 2 can be suitably used. Alcohol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc. Examples of the ketones include methyl ethyl ketone, cyclohexanone, 2-heptanone, and 3-heptanone. Aromatic hydrocarbons such as may be suitably include toluene and xylene.

就紫外線吸收劑及鹼可溶性樹脂的溶解性、塗佈面狀的改良等的觀點而言,混合2種以上的該些溶劑亦較佳。於此情況下,特佳為包含選自上述3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯中的2種以上的混合溶液。 From the viewpoints of solubility of the ultraviolet absorber and the alkali-soluble resin, improvement of the coating surface, and the like, it is also preferred to mix two or more kinds of these solvents. In this case, it is particularly preferred to comprise a methyl ester selected from the group consisting of methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, and diethylene glycol. Methyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol Two or more mixed solutions of methyl ether acetate.

當本發明的組成物包含溶劑時,就塗佈性的觀點而言,較佳為將溶劑於組成物中的含量設為組成物的總固體成分濃度變 成5質量%~80質量%的量,更佳為將溶劑於組成物中的含量設為組成物的總固體成分濃度變成5質量%~60質量%的量,特佳為將溶劑於組成物中的含量設為組成物的總固體成分濃度變成10質量%~50質量%的量。 When the composition of the present invention contains a solvent, from the viewpoint of coatability, it is preferred to set the content of the solvent in the composition to the total solid content concentration of the composition. The amount of the solvent in the composition is preferably such that the total solid content of the composition becomes 5% by mass to 60% by mass, and particularly preferably the solvent is used in the composition. The content in the medium is such that the total solid content concentration of the composition becomes 10% by mass to 50% by mass.

<鹼可溶性樹脂> <alkali soluble resin>

本發明的組成物較佳為進而含有鹼可溶性樹脂。藉由含有鹼可溶性樹脂,顯影性、圖案形成性提昇。 The composition of the present invention preferably further contains an alkali-soluble resin. By containing an alkali-soluble resin, developability and pattern formation property are improved.

作為鹼可溶性樹脂,可自分子(較佳為將丙烯酸系共聚物、苯乙烯系共聚物作為主鏈的分子)中具有至少1個促進鹼可溶性的基、且為線狀有機高分子聚合物的鹼可溶性樹脂中適宜選擇。就耐熱性的觀點而言,較佳為聚羥基苯乙烯系樹脂、聚矽氧烷系樹脂、丙烯酸系樹脂、丙烯醯胺系樹脂、丙烯酸/丙烯醯胺共聚物樹脂,就控制顯影性的觀點而言,較佳為丙烯酸系樹脂、丙烯醯胺系樹脂、丙烯酸/丙烯醯胺共聚物樹脂。 The alkali-soluble resin may have at least one base which promotes alkali solubility and is a linear organic high molecular polymer from a molecule (preferably a molecule in which an acrylic copolymer or a styrene copolymer is used as a main chain). It is suitably selected among alkali-soluble resins. From the viewpoint of heat resistance, a polyhydroxystyrene resin, a polyoxyalkylene resin, an acrylic resin, an acrylamide resin, or an acrylic/acrylamide copolymer resin is preferable, and the viewpoint of controlling developability is preferable. In particular, an acrylic resin, an acrylamide resin, or an acrylic/acrylamide copolymer resin is preferable.

作為促進鹼可溶性的基(以下,亦稱為酸基),例如可列舉羧基、磷酸基、磺酸基、酚性羥基等,較佳為可溶於溶劑且可藉由弱鹼性水溶液進行顯影的基,作為特佳者,可列舉(甲基)丙烯酸。該些酸基可僅為1種,亦可為2種以上。 Examples of the base which promotes alkali solubility (hereinafter, also referred to as an acid group) include a carboxyl group, a phosphoric acid group, a sulfonic acid group, and a phenolic hydroxyl group, and are preferably soluble in a solvent and can be developed by a weakly basic aqueous solution. As a base, (meth)acrylic acid is mentioned as a very good. These acid groups may be used alone or in combination of two or more.

作為上述於聚合後可賦予酸基的單體,例如可列舉:(甲基)丙烯酸2-羥基乙酯等具有羥基的單體、(甲基)丙烯酸縮水甘油酯等具有環氧基的單體、(甲基)丙烯酸2-異氰酸基乙酯等具有異氰酸酯基的單體等。該些用以導入酸基的單量體可僅為1種,亦可 為2種以上。於向鹼可溶性樹脂中導入酸基時,例如只要使具有酸基的單體及/或於聚合後可賦予酸基的單體(以下,有時亦稱為「用以導入酸基的單量體」)作為單量體成分進行聚合即可。再者,當將於聚合後可賦予酸基的單體作為單量體成分來導入酸基時,於聚合後需要例如後述般的用以賦予酸基的處理。 The monomer having an acid group after the polymerization is, for example, a monomer having a hydroxyl group such as 2-hydroxyethyl (meth)acrylate or a monomer having an epoxy group such as glycidyl (meth)acrylate. A monomer having an isocyanate group such as 2-isocyanatoethyl (meth)acrylate. The single body for introducing an acid group may be only one type, or There are two or more types. When an acid group is introduced into an alkali-soluble resin, for example, a monomer having an acid group and/or a monomer capable of imparting an acid group after polymerization (hereinafter sometimes referred to as "a single amount for introducing an acid group" may be used. The body ") can be polymerized as a single component. In addition, when an acid group can be introduced as a monomer component after polymerization, a treatment for imparting an acid group as described later is required after the polymerization.

於製造鹼可溶性樹脂時,可應用例如利用公知的自由基聚合法的方法。利用自由基聚合法製造鹼可溶性樹脂時的溫度、壓力、自由基起始劑的種類及其量、溶劑的種類等聚合條件可由本領域從業人員容易地設定,亦可實驗性地規定條件。 For the production of an alkali-soluble resin, for example, a method using a known radical polymerization method can be applied. The polymerization conditions such as the temperature, the pressure, the type and amount of the radical initiator, and the type of the solvent when the alkali-soluble resin is produced by the radical polymerization method can be easily set by a person skilled in the art, and experimental conditions can be specified.

作為用作鹼可溶性樹脂的線狀有機高分子聚合物,較佳為側鏈上具有羧酸的聚合物,可列舉:甲基丙烯酸共聚物、丙烯酸共聚物、衣康酸共聚物、巴豆酸共聚物、順丁烯二酸共聚物、部分酯化順丁烯二酸共聚物、酚醛清漆型樹脂等鹼可溶性酚樹脂等、以及側鏈上具有羧酸的酸性纖維素衍生物、使具有羥基的聚合物加成酸酐而成者。(甲基)丙烯酸與可與其進行共聚的其他單量體的共聚物特別適合作為鹼可溶性樹脂。作為可與(甲基)丙烯酸進行共聚的其他單量體,可列舉:(甲基)丙烯酸烷基酯、(甲基)丙烯酸芳基酯、乙烯基化合物等。作為(甲基)丙烯酸烷基酯及(甲基)丙烯酸芳基酯,可列舉(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸苯酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸甲苯酯、(甲基)丙烯酸萘 酯、(甲基)丙烯酸環己酯等,作為乙烯基化合物,可列舉苯乙烯、α-甲基苯乙烯、乙烯基甲苯、甲基丙烯酸縮水甘油酯、丙烯腈、乙酸乙烯酯、N-乙烯吡咯啶酮、甲基丙烯酸四氫糠酯、聚苯乙烯大分子單體、聚甲基丙烯酸甲酯大分子單體等,作為日本專利特開平10-300922號公報中所記載的N位取代順丁烯二醯亞胺單體,可列舉N-苯基順丁烯二醯亞胺、N-環己基順丁烯二醯亞胺等。再者,該些可與(甲基)丙烯酸進行共聚的其他單量體可僅為1種,亦可為2種以上。 The linear organic high molecular polymer used as the alkali-soluble resin is preferably a polymer having a carboxylic acid in a side chain, and examples thereof include a methacrylic acid copolymer, an acrylic copolymer, an itaconic acid copolymer, and a crotonic acid copolymer. An alkali-soluble phenol resin such as a copolymer of a maleic acid, a partially esterified maleic acid copolymer or a novolak-type resin, or an acidic cellulose derivative having a carboxylic acid in a side chain, and having a hydroxyl group The polymer is added to the anhydride. Copolymers of (meth)acrylic acid with other monoliths copolymerizable therewith are particularly suitable as alkali-soluble resins. Examples of the other monomer to be copolymerizable with (meth)acrylic acid include an alkyl (meth)acrylate, an aryl (meth)acrylate, and a vinyl compound. Examples of the (meth)acrylic acid alkyl ester and the (meth)acrylic acid aryl ester include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and (meth)acrylic acid. Butyl ester, isobutyl (meth)acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, octyl (meth)acrylate, phenyl (meth)acrylate, benzyl (meth)acrylate Ester, toluene (meth)acrylate, naphthalene (meth)acrylate Examples of the vinyl compound, cyclohexyl (meth) acrylate, etc., and examples of the vinyl compound include styrene, α-methylstyrene, vinyltoluene, glycidyl methacrylate, acrylonitrile, vinyl acetate, and N-ethylene. Pyrrolidone, tetrahydrofurfuryl methacrylate, polystyrene macromonomer, polymethyl methacrylate macromonomer, etc., as described in Japanese Patent Laid-Open No. Hei 10-300922 Examples of the butylenediimide monomer include N-phenyl maleimide and N-cyclohexylmethyleneimine. Further, these other monomeric substances which can be copolymerized with (meth)acrylic acid may be used alone or in combination of two or more.

作為鹼可溶性樹脂,包含如下的聚合物作為鹼可溶性樹脂亦較佳,該聚合物是使將以下述通式(ED)所表示的化合物(以下,有時亦稱為「醚二聚體」)作為必需成分的單量體成分進行聚合而成的聚合物: The alkali-soluble resin is preferably an alkali-soluble resin which is a compound represented by the following formula (ED) (hereinafter sometimes referred to as "ether dimer"). A polymer obtained by polymerizing a single component as an essential component:

(式(ED)中,R1及R2分別獨立地表示氫原子或可具有取代基的碳數為1~25的烴基)。藉此,本發明的組成物可形成耐熱性極其優異、且透明性亦極其優異的硬化塗膜。表示上述醚二聚體的上述通式中,作為由R1或R2所表示的可具有取代基的碳數為1~25的烴基,並無特別限制,例如可列舉:甲基、乙基、正丙基、 異丙基、正丁基、異丁基、第三丁基、第三戊基、硬脂基、月桂基、2-乙基己基等直鏈狀或分支狀的烷基;苯基等芳基;環己基、第三丁基環己基、二環戊二烯基、三環癸基、異冰片基、金剛烷基、2-甲基-2-金剛烷基等脂環式基;經1-甲氧基乙基、1-乙氧基乙基等烷氧基取代的烷基;經苄基等芳基取代的烷基等。該些基之中,就耐熱性的觀點而言,特佳為如甲基、乙基、環己基、苄基等般的難以因酸或熱而脫離的一級碳或二級碳的取代基。 (In the formula (ED), R 1 and R 2 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 25 carbon atoms which may have a substituent). Thereby, the composition of the present invention can form a cured coating film which is extremely excellent in heat resistance and extremely excellent in transparency. In the above-mentioned general formula of the above-mentioned ether dimer, the hydrocarbon group having 1 to 25 carbon atoms which may have a substituent represented by R 1 or R 2 is not particularly limited, and examples thereof include a methyl group and an ethyl group. a linear or branched alkyl group such as n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, tert-pentyl, stearyl, lauryl or 2-ethylhexyl; An aryl group such as a phenyl group; an alicyclic group such as a cyclohexyl group, a tert-butylcyclohexyl group, a dicyclopentadienyl group, a tricyclodecanyl group, an isobornyl group, an adamantyl group or a 2-methyl-2-adamantyl group; An alkyl group substituted with an alkoxy group such as 1-methoxyethyl or 1-ethoxyethyl; an alkyl group substituted with an aryl group such as a benzyl group; and the like. Among these bases, from the viewpoint of heat resistance, a substituent of a primary carbon or a secondary carbon which is hard to be removed by acid or heat such as a methyl group, an ethyl group, a cyclohexyl group or a benzyl group is particularly preferable.

作為上述醚二聚體的具體例,例如可列舉:二甲基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二乙基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(正丙基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(異丙基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(正丁基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(異丁基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(第三丁基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(第三戊基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(硬脂基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(月桂基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(2-乙基己基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(1-甲氧基乙基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(1-乙氧基乙基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二苯基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二環己基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(第三丁基環己基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(二環戊二烯基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二 (三環癸基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(異冰片基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二金剛烷基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二(2-甲基-2-金剛烷基)-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯等。該些之中,特佳為二甲基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二乙基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二環己基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2'-[氧代雙(亞甲基)]雙-2-丙烯酸酯。該些醚二聚體可僅為1種,亦可為2種以上。源自由上述通式(ED)所表示的化合物的結構體亦可與其他單量體進行共聚。 Specific examples of the ether dimer include dimethyl-2,2'-[oxobis(methylene)]bis-2-acrylate and diethyl-2,2'-[ Oxobis(methylene)]bis-2-acrylate, di(n-propyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, di(isopropyl) -2,2'-[oxobis(methylene)]bis-2-acrylate, di(n-butyl)-2,2'-[oxobis(methylene)]bis-2- Acrylate, di(isobutyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, di(t-butyl)-2,2'-[oxo-double ( Methylene)]bis-2-acrylate, bis(third amyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, bis(stearyl)-2 , 2'-[oxobis(methylene)]bis-2-acrylate, bis(lauryl)-2,2'-[oxobis(methylene)]bis-2-acrylate, two (2-ethylhexyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, bis(1-methoxyethyl)-2,2'-[oxo double (methylene)] bis-2-acrylate, bis(1-ethoxyethyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, dibenzyl- 2,2'-[oxobis(methylene)]bis-2-acrylate, diphenyl-2,2'-[oxobis(methylene)]bis-2-propene Acid ester, dicyclohexyl-2,2'-[oxobis(methylene)]bis-2-acrylate, bis(t-butylcyclohexyl)-2,2'-[oxo double (Asia Methyl)]bis-2-acrylate, bis(dicyclopentadienyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, two (tricyclodecyl)-2,2'-[oxobis(methylene)]bis-2-acrylate, bis(isobornyl)-2,2'-[oxobis(methylene) Bis-2-acrylate, diamantyl-2,2'-[oxobis(methylene)]bis-2-acrylate, bis(2-methyl-2-adamantyl)-2 2'-[oxobis(methylene)]bis-2-acrylate. Among them, dimethyl-2,2'-[oxobis(methylene)]bis-2-acrylate, diethyl-2,2'-[oxo-double (sub- Base]] bis-2-acrylate, dicyclohexyl-2,2'-[oxobis(methylene)]bis-2-acrylate, dibenzyl-2,2'-[oxo double ( Methylene)] bis-2-acrylate. These ether dimers may be used alone or in combination of two or more. The structure from which the compound represented by the above formula (ED) is derived may be copolymerized with other monomer.

作為鹼可溶性酚樹脂,可適宜地用於將本發明的組成物製成正型的組成物的情況。作為鹼可溶性酚樹脂,例如可列舉:酚醛清漆樹脂、或乙烯基聚合物等。 The alkali-soluble phenol resin can be suitably used in the case where the composition of the present invention is made into a positive composition. Examples of the alkali-soluble phenol resin include a novolak resin and a vinyl polymer.

作為上述酚醛清漆樹脂,例如可列舉於酸觸媒的存在下使酚類與醛類進行縮合而獲得者。作為上述酚類,例如可列舉:苯酚、甲酚、乙基苯酚、丁基苯酚、二甲酚、苯基苯酚、兒茶酚、間苯二酚、五倍子酚(pyrogallol)、萘酚、或雙酚A等。 The novolac resin is obtained by, for example, condensing a phenol with an aldehyde in the presence of an acid catalyst. Examples of the phenols include phenol, cresol, ethylphenol, butylphenol, xylenol, phenylphenol, catechol, resorcinol, pyrogallol, naphthol, or double Phenol A and the like.

作為上述醛類,例如可列舉:甲醛、三聚甲醛(paraformaldehyde)、乙醛、丙醛、或苯甲醛等。 Examples of the aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, and benzaldehyde.

上述酚類及醛類可單獨使用、或將2種以上組合使用。 The phenols and aldehydes may be used singly or in combination of two or more.

作為上述酚醛清漆樹脂的具體例,例如可列舉間甲酚、對甲酚或該些的混合物與甲醛的縮合產物。 Specific examples of the novolak resin include m-cresol, p-cresol or a condensation product of a mixture of these and formaldehyde.

上述酚醛清漆樹脂亦可利用分餾(fractionation)等方法 來調節分子量分布。另外,亦可於上述酚醛清漆樹脂中混合雙酚C或雙酚A等具有酚系羥基的低分子量成分。 The above novolac resin may also be subjected to fractionation or the like. To adjust the molecular weight distribution. Further, a low molecular weight component having a phenolic hydroxyl group such as bisphenol C or bisphenol A may be mixed with the novolak resin.

另外,為了提昇本發明中的組成物的交聯效率,亦可使用具有聚合性基的鹼可溶性樹脂。作為具有聚合性基的鹼可溶性樹脂,側鏈上含有烯丙基、(甲基)丙烯醯基、烯丙氧基烷基等的鹼可溶性樹脂等有用。作為含有上述聚合性基的聚合物的例子,可列舉:Dianal NR系列(三菱麗陽股份有限公司製造)、Photomer6173(含有COOH的丙烯酸聚胺基甲酸酯寡聚物(polyurethane acrylic oligomer),鑽石三葉草有限公司(Diamond Shamrock Co.,Ltd.)製造)、Viscoat R-264、KS Resist106(均為大阪有機化學工業股份有限公司製造)、Cyclomer P系列、Placcel CF200系列(均為大賽璐(Daicel)化學工業股份有限公司製造)、Ebecryl3800(Daicel-UCB股份有限公司製造)等。作為該些含有聚合性基的鹼可溶性樹脂,較佳為如下的樹脂:經胺基甲酸酯改質的含有聚合性雙鍵的丙烯酸樹脂,其藉由事先使異氰酸酯基與OH基進行反應、殘留1個未反應的異氰酸酯基、且含有(甲基)丙烯醯基的化合物與含有羧基的丙烯酸樹脂的反應而獲得;藉由含有羧基的丙烯酸樹脂與分子內同時具有環氧基及聚合性雙鍵的化合物的反應所獲得的含有不飽和基的丙烯酸樹脂;酸側基型環氧丙烯酸酯樹脂;使含有OH基的丙烯酸樹脂與具有聚合性雙鍵的二元酸酐進行反應而成的含有聚合性雙鍵的丙烯酸樹脂;使含有OH基的丙烯酸樹脂與異氰酸酯及具有聚合性基的化合物進行反應而成的樹 脂;藉由對日本專利特開2002-229207號公報、及日本專利特開2003-335814號公報中所記載的α位或β位上具有鹵素原子或磺酸酯基等脫離基、且側鏈上具有酯基的樹脂進行鹼性處理而獲得的樹脂等。 Further, in order to improve the crosslinking efficiency of the composition in the present invention, an alkali-soluble resin having a polymerizable group may also be used. As the alkali-soluble resin having a polymerizable group, an alkali-soluble resin containing an allyl group, a (meth) acrylonitrile group, an allyloxyalkyl group or the like in the side chain is useful. Examples of the polymer containing the above polymerizable group include Dianal NR series (manufactured by Mitsubishi Rayon Co., Ltd.) and Photomer 6173 (polyurethane acrylic oligomer containing COOH, diamonds). Clover Co., Ltd. (manufactured by Diamond Shamrock Co., Ltd.), Viscoat R-264, KS Resist 106 (all manufactured by Osaka Organic Chemical Industry Co., Ltd.), Cyclomer P series, and Placcel CF200 series (both are Daicel) Chemical Industry Co., Ltd.), Ebecryl 3800 (manufactured by Daicel-UCB Co., Ltd.), and the like. The alkali-soluble resin containing a polymerizable group is preferably a resin containing a polymerizable double bond modified by a urethane, and reacting an isocyanate group with an OH group in advance. Obtaining an unreacted isocyanate group and a compound containing a (meth)acryloyl group and reacting with a carboxyl group-containing acrylic resin; and having an epoxy group and a polymerizable double in the molecule by an acrylic resin containing a carboxyl group; An unsaturated group-containing acrylic resin obtained by the reaction of a bond compound; an acid side group type epoxy acrylate resin; and a polymerization reaction obtained by reacting an OH group-containing acrylic resin with a dibasic acid anhydride having a polymerizable double bond Acrylic resin having double bond; a tree obtained by reacting an OH group-containing acrylic resin with an isocyanate and a compound having a polymerizable group A cleavage group having a halogen atom or a sulfonate group at the α-position or the β-position described in Japanese Laid-Open Patent Publication No. 2002-229207, and JP-A-2003-335814, and a side chain. A resin obtained by subjecting a resin having an ester group to an alkali treatment.

另外,使用(a)聚醯亞胺、聚苯并噁唑或該些的前驅物作為鹼可溶性樹脂亦較佳。聚醯亞胺及聚苯并噁唑是主鏈結構內具有醯亞胺環或噁唑環的環狀結構的樹脂。聚醯亞胺前驅物及聚苯并噁唑前驅物是主鏈上具有醯胺鍵的樹脂,藉由加熱處理或化學處理而進行脫水閉環,藉此成為上述聚醯亞胺或聚苯并噁唑。藉由含有該些樹脂,可獲得絕緣性優異的組成物。作為聚醯亞胺前驅物,例如可列舉:聚醯胺酸、聚醯胺酸酯、聚醯胺酸醯胺、聚異醯亞胺等。作為聚苯并噁唑前驅物,例如可列舉:聚羥基醯胺、聚胺基醯胺、聚醯胺、聚醯胺醯亞胺等。較佳為結構單元的重複數均為10~100,000。可含有2種以上的該些化合物,亦可含有具有該些化合物的2種以上的結構單元的共聚物。當藉由以250℃以下的低溫進行熱處理來進行硬化時,就耐化學品性的觀點而言,更佳為聚醯亞胺。 Further, it is also preferred to use (a) polyimine, polybenzoxazole or a precursor thereof as the alkali-soluble resin. Polyimine and polybenzoxazole are resins having a cyclic structure of a quinone ring or an oxazole ring in a main chain structure. The polyimidazole precursor and the polybenzoxazole precursor are resins having a guanamine bond in the main chain, and are subjected to dehydration ring closure by heat treatment or chemical treatment, thereby becoming the above polybendimimine or polybenzazole Oxazole. By containing these resins, a composition excellent in insulation properties can be obtained. Examples of the polyimine precursor include polylysine, polyphthalate, polyamidamine, polyisophthalimide, and the like. Examples of the polybenzoxazole precursor include polyhydroxyguanamine, polyamine amide, polyamine, and polyamidoximine. Preferably, the number of repeats of the structural unit is from 10 to 100,000. Two or more kinds of these compounds may be contained, and a copolymer having two or more kinds of structural units of these compounds may be contained. When the curing is carried out by heat treatment at a low temperature of 250 ° C or lower, it is more preferably polyimine from the viewpoint of chemical resistance.

聚醯亞胺通常可藉由利用加熱或酸或鹼等的化學處理使聚醯胺酸進行脫水閉環而獲得,且具有四羧酸殘基與二胺殘基,上述聚醯胺酸是使四羧酸二酐與二胺進行反應而獲得的聚醯亞胺前驅物之一。 Polyimine is usually obtained by dehydration ring closure of polylysine by chemical treatment by heating or acid or alkali, and has a tetracarboxylic acid residue and a diamine residue, and the above polyamine is made of four One of the polyimine precursors obtained by reacting a carboxylic acid dianhydride with a diamine.

於本發明中,聚醯亞胺較佳為具有由下述通式(3)所 表示的結構單元者。可含有2種以上的上述結構單元,亦可為與其他結構單元的共聚物。 In the present invention, the polyiminimide preferably has the following formula (3) The structural unit represented. Two or more types of the above structural unit may be contained, and a copolymer with other structural units may be used.

上述通式(3)中,R1-(R3)p表示四羧酸殘基。R1為4價~10價的有機基,較佳為具有芳香族環或環狀脂肪族基的碳原子數為5~40的4價~10價的有機基。 In the above formula (3), R 1 -(R 3 ) p represents a tetracarboxylic acid residue. R 1 is a tetravalent to 10-valent organic group, and preferably a tetravalent to 10-valent organic group having an aromatic ring or a cyclic aliphatic group and having 5 to 40 carbon atoms.

作為構成四羧酸殘基的酸二酐,例如可列舉:均苯四甲酸二酐、3,3',4,4'-聯苯四羧酸二酐、2,3,3',4'-聯苯四羧酸二酐、2,2',3,3'-聯苯四羧酸二酐、3,3',4,4'-二苯基酮四羧酸二酐、2,2',3,3'-二苯基酮四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)碸二酐、雙(3,4-二羧基苯基)醚二酐、1,2,5,6-萘四羧酸二酐、9,9-雙(3,4-二羧基苯基)茀酸二酐、9,9-雙{4-(3,4-二羧基苯氧基)苯基}茀酸二酐、2,3,6,7-萘四羧酸二酐、2,3,5,6-吡啶四羧酸二酐、3,4,9,10-苝四羧 酸二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、3,3',4,4'-二苯基碸四羧酸二酐及具有下述所示的結構的酸二酐等芳香族四羧酸二酐,或者丁烷四羧酸二酐、1,2,3,4-環戊烷四羧酸二酐等脂肪族四羧酸二酐等。可使用2種以上的上述酸二酐。 Examples of the acid dianhydride constituting the tetracarboxylic acid residue include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, and 2,3,3',4'. -biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-diphenyl ketone tetracarboxylic dianhydride, 2,2 ',3,3'-diphenyl ketone tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl) Propane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, double (3,4) -dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)ruthenic anhydride, bis(3,4-dicarboxyphenyl) Ether dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 9,9-bis(3,4-dicarboxyphenyl)decanoic acid dianhydride, 9,9-double {4-(3) , 4-dicarboxyphenoxy)phenyl}decanoic acid dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 2,3,5,6-pyridinetetracarboxylic dianhydride, 3,4 9,10-tetracarboxylic acid Acid dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 3,3',4,4'-diphenylphosphonium tetracarboxylic dianhydride and having the following An aromatic tetracarboxylic dianhydride such as an acid dianhydride or an aliphatic tetracarboxylic dianhydride such as butane tetracarboxylic dianhydride or 1,2,3,4-cyclopentane tetracarboxylic dianhydride. Two or more kinds of the above acid dianhydrides can be used.

R10表示氧原子、C(CF3)2、C(CH3)2或SO2。R11及R12表示氫原子、羥基或硫醇基。 R 10 represents an oxygen atom, C(CF 3 ) 2 , C(CH 3 ) 2 or SO 2 . R 11 and R 12 represent a hydrogen atom, a hydroxyl group or a thiol group.

上述通式(3)中,R2-(R4)q表示二胺殘基。R2為2價~8價的有機基,較佳為具有芳香族環或環狀脂肪族基的碳原子數為5~40的2價~8價的有機基。 In the above formula (3), R 2 -(R 4 ) q represents a diamine residue. R 2 is a divalent to octavalent organic group, and preferably a divalent to octavalent organic group having an aromatic ring or a cyclic aliphatic group and having 5 to 40 carbon atoms.

作為構成二胺殘基的二胺,例如可列舉:3,4'-二胺基二苯醚、4,4'-二胺基二苯醚、3,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基甲烷、3,4'-二胺基二苯基碸、4,4'-二胺基二苯基碸、3,4'-二胺基二苯硫醚、4,4'-二胺基二苯硫醚、1,4-雙(4-胺基苯氧基)苯、石油精(benzine)、間苯二胺、對苯二胺、1,5-萘二胺、2,6-萘二胺、雙(4-胺基苯氧基苯基)碸、雙(3-胺基苯氧基苯基)碸、雙(4-胺基苯氧基)聯苯、雙{4-(4-胺基苯氧基)苯基}醚、1,4-雙(4-胺基苯氧基)苯、2,2'-二甲基-4,4'-二胺基聯苯、2,2'-二乙基-4,4'-二胺基聯苯、3,3'-二甲基-4,4'-二胺基聯苯、3,3'-二乙基-4,4'-二胺基聯苯、 2,2',3,3'-四甲基-4,4'-二胺基聯苯、3,3',4,4'-四甲基-4,4'-二胺基聯苯、2,2'-二(三氟甲基)-4,4'-二胺基聯苯、9,9-雙(4-胺基苯基)茀、或者利用烷基或鹵素原子取代該些芳香族環的氫原子的至少一部分而成的化合物、環己基二胺、亞甲基雙環己胺等脂肪族二胺、及具有下述所示的結構的二胺等。可使用2種以上的上述二胺。 Examples of the diamine constituting the diamine residue include 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, and 3,4'-diaminodiphenylmethane. , 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylanthracene, 4,4'-diaminodiphenylanthracene, 3,4'-diaminodiphenyl Thioether, 4,4'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, benzine, m-phenylenediamine, p-phenylenediamine, 1, 5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxyphenyl)fluorene, bis(3-aminophenoxyphenyl)fluorene, bis(4-aminophenoxyl) Biphenyl, bis{4-(4-aminophenoxy)phenyl}ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4, 4'-Diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3 , 3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 9,9-bis(4-aminophenyl)anthracene, or substituted with an alkyl or halogen atom A compound obtained by at least a part of a hydrogen atom of a group ring, an aliphatic diamine such as cyclohexyldiamine or methylenebiscyclohexylamine, or a diamine having a structure shown below. Two or more kinds of the above diamines can be used.

R10表示氧原子、C(CF3)2、C(CH3)2或SO2。R11~R14表示氫原子、羥基或硫醇基。 R 10 represents an oxygen atom, C(CF 3 ) 2 , C(CH 3 ) 2 or SO 2 . R 11 to R 14 represent a hydrogen atom, a hydroxyl group or a thiol group.

聚苯并噁唑可使雙胺基苯酚與二羧酸、相對應的二甲醯氯、二羧酸活性酯等進行反應而獲得。通常,可藉由利用加熱或磷酸酐、鹼、碳二醯亞胺化合物等的化學處理使聚羥基醯胺進行脫水閉環而獲得,且具有二羧酸殘基與雙胺基苯酚殘基,上述聚羥基醯胺是使雙胺基苯酚化合物與二羧酸進行反應而獲得的聚苯并噁唑前驅物之一。作為構成二羧酸殘基的酸,例如可列舉:對苯二甲酸、間苯二甲酸、二苯醚二羧酸、雙(羧基苯基)六氟丙烷、 聯苯二羧酸、二苯基酮二羧酸、三苯基二羧酸等。可使用2種以上的上述酸。 Polybenzoxazole can be obtained by reacting a bisaminophenol with a dicarboxylic acid, a corresponding dimethylhydrazine chloride, an active dicarboxylic acid ester or the like. In general, it can be obtained by subjecting polyhydroxyguanamine to dehydration ring closure by chemical treatment by heating or phosphoric anhydride, a base, a carbodiimide compound or the like, and having a dicarboxylic acid residue and a bisaminophenol residue, The polyhydroxy decylamine is one of the polybenzoxazole precursors obtained by reacting a bisaminophenol compound with a dicarboxylic acid. Examples of the acid constituting the dicarboxylic acid residue include terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, and bis(carboxyphenyl)hexafluoropropane. Biphenyldicarboxylic acid, diphenylketone dicarboxylic acid, triphenyldicarboxylic acid, and the like. Two or more kinds of the above acids can be used.

作為構成雙胺基苯酚殘基的二胺,例如可列舉具有下述所示的結構的二胺等。可使用2種以上的上述二胺。 Examples of the diamine constituting the bisaminophenol residue include a diamine having the structure shown below. Two or more kinds of the above diamines can be used.

R10表示氧原子、C(CF3)2、C(CH3)2或SO2。R11~R14表示氫原子、羥基或硫醇基,且於各二胺中至少一個為羥基。 R 10 represents an oxygen atom, C(CF 3 ) 2 , C(CH 3 ) 2 or SO 2 . R 11 to R 14 represent a hydrogen atom, a hydroxyl group or a thiol group, and at least one of each diamine is a hydroxyl group.

聚醯亞胺前驅物例如可使四羧酸二酐(可將一部分取代成酸酐、單醯氯化合物或單活性酯化合物)與二胺化合物進行反應而獲得,且具有四羧酸殘基與二胺殘基。 The polyimine precursor can be obtained, for example, by reacting a tetracarboxylic dianhydride (a part of which may be substituted into an acid anhydride, a monofluorinated chlorine compound or a mono-active ester compound) with a diamine compound, and having a tetracarboxylic acid residue and two Amine residue.

聚苯并噁唑前驅物例如可使雙胺基苯酚化合物與二羧酸進行反應而獲得,且具有二羧酸殘基與雙胺基苯酚殘基。 The polybenzoxazole precursor can be obtained, for example, by reacting a bisaminophenol compound with a dicarboxylic acid, and has a dicarboxylic acid residue and a bisaminophenol residue.

於本發明中,聚醯亞胺前驅物及聚苯并噁唑前驅物較佳為具有由下述通式(4)所表示的結構單元者。可含有2種以上的上述結構單元,亦可為與其他結構單元的共聚物。 In the present invention, the polyimidazole precursor and the polybenzoxazole precursor are preferably those having a structural unit represented by the following formula (4). Two or more types of the above structural unit may be contained, and a copolymer with other structural units may be used.

上述通式(4)中,R5及R6表示2價~8價的有機基,彼此可相同,亦可不同。R7及R8表示酚性羥基、磺酸基、硫醇基、或COOR9,彼此可相同,亦可不同。R9表示氫原子或碳原子數為1~20的一價的烴基。r及s表示0~6的整數。其中,r+s>0。 In the above formula (4), R 5 and R 6 each represent a divalent to octavalent organic group, and may be the same or different. R 7 and R 8 represent a phenolic hydroxyl group, a sulfonic acid group, a thiol group, or COOR 9 , and may be the same or different. R 9 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. r and s represent integers from 0 to 6. Where r+s>0.

上述通式(4)中,R5-(R7)r表示二羧酸或四羧酸等的酸殘基。R5為2價~8價的有機基,較佳為含有芳香族環或環狀脂肪族基的碳原子數為5~40的2價~8價的有機基。 In the above formula (4), R 5 -(R 7 ) r represents an acid residue such as a dicarboxylic acid or a tetracarboxylic acid. R 5 is a divalent to octavalent organic group, and preferably a divalent to octavalent organic group having an aromatic ring or a cyclic aliphatic group and having 5 to 40 carbon atoms.

作為構成酸殘基的酸,例如作為二羧酸的例子,可列舉作為構成聚苯并噁唑的二羧酸殘基的酸所例示者。作為三羧酸的例子,可列舉:偏苯三甲酸、均苯三甲酸、二苯醚三羧酸、聯苯三羧酸等。作為四羧酸的例子,可列舉:均苯四甲酸、3,3',4,4'-聯苯四羧酸、2,3,3',4'-聯苯四羧酸、2,2',3,3'-聯苯四羧酸、3,3',4,4'-二苯基酮四羧酸、2,2',3,3'-二苯基酮四羧酸、2,2-雙(3,4-二羧基苯基)六氟丙烷、2,2-雙(2,3-二羧基苯基)六氟丙烷、1,1-雙(3,4-二羧基苯基)乙烷、1,1-雙(2,3-二羧基苯基)乙烷、雙(3,4-二羧基苯基)甲烷、雙(2,3-二羧基苯基)甲烷、雙(3,4-二羧基苯基)碸、雙(3,4-二羧基苯基)醚、1,2,5,6-萘四羧酸、2,3,6,7-萘四羧酸、2,3,5,6-吡 啶四羧酸、3,4,9,10-苝四羧酸及具有下述所示的結構的四羧酸等芳香族四羧酸,或者丁烷四羧酸、1,2,3,4-環戊烷四羧酸等脂肪族四羧酸等。可使用2種以上的上述酸。 Examples of the acid constituting the acid residue include, as an example of the dicarboxylic acid, an acid which is a dicarboxylic acid residue constituting the polybenzoxazole. Examples of the tricarboxylic acid include trimellitic acid, trimesic acid, diphenyl ether tricarboxylic acid, and biphenyl tricarboxylic acid. Examples of the tetracarboxylic acid include pyromellitic acid, 3,3', 4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 2,2. ',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-diphenyl ketone tetracarboxylic acid, 2,2',3,3'-diphenyl ketone tetracarboxylic acid, 2 ,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, 2,2-bis(2,3-dicarboxyphenyl)hexafluoropropane, 1,1-bis(3,4-dicarboxybenzene Ethylene, 1,1-bis(2,3-dicarboxyphenyl)ethane, bis(3,4-dicarboxyphenyl)methane, bis(2,3-dicarboxyphenyl)methane, double (3,4-dicarboxyphenyl)anthracene, bis(3,4-dicarboxyphenyl)ether, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid , 2,3,5,6-pyridyl An aromatic tetracarboxylic acid such as tetracarboxylic acid, 3,4,9,10-decanetetracarboxylic acid or a tetracarboxylic acid having the structure shown below, or butane tetracarboxylic acid, 1, 2, 3, 4 An aliphatic tetracarboxylic acid such as cyclopentanetetracarboxylic acid. Two or more kinds of the above acids can be used.

R10表示氧原子、C(CF3)2、C(CH3)2或SO2。R11及R12表示氫原子、羥基或硫醇基。 R 10 represents an oxygen atom, C(CF 3 ) 2 , C(CH 3 ) 2 or SO 2 . R 11 and R 12 represent a hydrogen atom, a hydroxyl group or a thiol group.

該些之中,於三羧酸、四羧酸中,1個或2個羧基相當於通式(4)中的R7基。另外,更佳為利用通式(4)中的R7基,較佳為羥基或磺酸基、硫醇基等取代1個~4個上述例示的二羧酸、三羧酸、四羧酸的氫原子而成者。該些酸可直接使用,或作為酸酐、活性酯來使用。 Among these, one or two carboxyl groups in the tricarboxylic acid and the tetracarboxylic acid correspond to the R 7 group in the formula (4). Further, it is more preferred to substitute one or four of the above-exemplified dicarboxylic acids, tricarboxylic acids, and tetracarboxylic acids by using a R 7 group in the formula (4), preferably a hydroxyl group or a sulfonic acid group, a thiol group or the like. The hydrogen atom is the one. These acids can be used as they are or as an acid anhydride or an active ester.

上述通式(4)中的R6-(R8)s表示二胺或雙胺基苯酚等的胺殘基。R8為2價~8價的有機基,較佳為具有芳香族環或環狀脂肪族基的碳原子數為5~40的2價~8價的有機基。 R 6 -(R 8 ) s in the above formula (4) represents an amine residue such as a diamine or a bisaminophenol. R 8 is a divalent to octavalent organic group, and preferably a divalent to octavalent organic group having an aromatic ring or a cyclic aliphatic group and having 5 to 40 carbon atoms.

作為構成胺殘基的二胺,例如可列舉作為構成聚醯亞胺的二胺殘基的二胺所例示者。 Examples of the diamine constituting the amine residue include those exemplified as the diamine constituting the diamine residue of the polyimine.

另外,較佳為利用具有羥基、羧基、磺酸基或硫醇基的單胺、酸酐、醯氯、一元羧酸對該些樹脂的末端進行封端。可使用其中的2種以上。藉由在主鏈末端具有上述基,可容易地將樹 脂對於鹼性水溶液的溶解速度調整成較佳的範圍。 Further, it is preferred to block the ends of the resins by a monoamine having an hydroxyl group, a carboxyl group, a sulfonic acid group or a thiol group, an acid anhydride, a hydrazine chloride or a monocarboxylic acid. Two or more of them can be used. By having the above-mentioned base at the end of the main chain, the tree can be easily The rate of dissolution of the lipid to the aqueous alkaline solution is adjusted to a preferred range.

作為單胺的較佳例,可列舉:5-胺基-8-羥基喹啉、1-羥基-7-胺基萘、1-羥基-6-胺基萘、1-羥基-5-胺基萘、1-羥基-4-胺基萘、2-羥基-7-胺基萘、2-羥基-6-胺基萘、2-羥基-5-胺基萘、1-羧基-7-胺基萘、1-羧基-6-胺基萘、1-羧基-5-胺基萘、2-羧基-7-胺基萘、2-羧基-6-胺基萘、2-羧基-5-胺基萘、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基硫酚、3-胺基硫酚、4-胺基硫酚等。可使用2種以上的上述單胺。 Preferred examples of the monoamine include 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, and 1-hydroxy-5-amino group. Naphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-amino group Naphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-amino group Naphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-amine Benzobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-amino group Phenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, and the like. Two or more kinds of the above monoamines can be used.

作為酸酐、醯氯、一元羧酸的較佳例,可列舉:鄰苯二甲酸酐、順丁烯二酸酐、納迪克酸、環己烷二羧酸酐、3-羥基鄰苯二甲酸酐等酸酐,3-羧基苯酚、4-羧基苯酚、3-羧基硫酚、4-羧基硫酚、1-羥基-7-羧基萘、1-羥基-6-羧基萘、1-羥基-5-羧基萘、1-巰基-7-羧基萘、1-巰基-6-羧基萘、1-巰基-5-羧基萘、3-羧基苯磺酸、4-羧基苯磺酸等一元羧酸類及該些的羧基經醯氯化而成的單醯氯化合物,對苯二甲酸、鄰苯二甲酸、順丁烯二酸、環己烷二羧酸、1,5-二羧基萘、1,6-二羧基萘、1,7-二羧基萘、2,6-二羧基萘等二羧酸類的僅1個羧基經醯氯化而成的單醯氯化合物,藉由單醯氯化合物與N-羥基苯并三唑或N-羥基-5-降冰片烯-2,3-二羧基醯亞胺的反應所獲得的活性酯化合物。可使用2種以上的上述酸酐、醯氯、一元羧酸。 Preferable examples of the acid anhydride, hydrazine chloride, and monocarboxylic acid include acid anhydrides such as phthalic anhydride, maleic anhydride, nadic acid, cyclohexane dicarboxylic anhydride, and 3-hydroxyphthalic anhydride. , 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, Monocarboxylic acids such as 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, and the like Monoterpene chlorine compound obtained by chlorination of hydrazine, terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, a monoterpene chlorine compound obtained by chlorination of only one carboxyl group of a dicarboxylic acid such as 1,7-dicarboxynaphthalene or 2,6-dicarboxynaphthalene by a ruthenium chloride compound and N-hydroxybenzotriazole Or an active ester compound obtained by the reaction of N-hydroxy-5-norbornene-2,3-dicarboxy quinone. Two or more kinds of the above acid anhydride, hydrazine chloride, and monocarboxylic acid can be used.

作為鹼可溶性樹脂,特別合適的是包含(甲基)丙烯酸苄酯/(甲基)丙烯酸共聚物或(甲基)丙烯酸苄酯/(甲基)丙烯酸/其他單體的多元共聚物。除此以外,可列舉:使甲基丙烯酸2-羥基乙酯進行共聚而成者,日本專利特開平7-140654號公報中所記載的(甲基)丙烯酸2-羥基丙酯/聚苯乙烯大分子單體/甲基丙烯酸苄酯/甲基丙烯酸共聚物、丙烯酸2-羥基-3-苯氧基丙酯/聚甲基丙烯酸甲酯大分子單體/甲基丙烯酸苄酯/甲基丙烯酸共聚物、甲基丙烯酸2-羥基乙酯/聚苯乙烯大分子單體/甲基丙烯酸甲酯/甲基丙烯酸共聚物、甲基丙烯酸2-羥基乙酯/聚苯乙烯大分子單體/甲基丙烯酸苄酯/甲基丙烯酸共聚物等。 As the alkali-soluble resin, a polyvalent copolymer containing a benzyl (meth)acrylate/(meth)acrylic copolymer or a benzyl (meth)acrylate/(meth)acrylic acid/other monomer is particularly suitable. In addition, the 2-hydroxypropyl (meth)acrylate/polystyrene described in JP-A-7-140654 is exemplified by the copolymerization of 2-hydroxyethyl methacrylate. Molecular monomer / benzyl methacrylate / methacrylic acid copolymer, 2-hydroxy-3-phenoxypropyl acrylate / polymethyl methacrylate macromer / benzyl methacrylate / methacrylic acid copolymer , 2-hydroxyethyl methacrylate/polystyrene macromonomer/methyl methacrylate/methacrylic acid copolymer, 2-hydroxyethyl methacrylate/polystyrene macromer/methyl Benzyl acrylate/methacrylic acid copolymer and the like.

作為鹼可溶性樹脂的酸值,較佳為30mgKOH/g~200mgKOH/g,更佳為50mgKOH/g~150mgKOH/g,最佳為70mgKOH/g~120mgKOH/g。 The acid value of the alkali-soluble resin is preferably from 30 mgKOH/g to 200 mgKOH/g, more preferably from 50 mgKOH/g to 150 mgKOH/g, most preferably from 70 mgKOH/g to 120 mgKOH/g.

另外,作為鹼可溶性樹脂的重量平均分子量(Mw),較佳為2,000~50,000,更佳為5,000~30,000,最佳為7,000~20,000。 Further, the weight average molecular weight (Mw) of the alkali-soluble resin is preferably 2,000 to 50,000, more preferably 5,000 to 30,000, most preferably 7,000 to 20,000.

當含有鹼可溶性樹脂時,作為於該組成物中的含量,相對於該組成物的總固體成分,較佳為30質量%~80質量%,更佳為50質量%~70質量%。鹼可溶性樹脂可為1種,亦可為2種以上,當含有2種以上時,合計量成為上述範圍。 When the alkali-soluble resin is contained, the content in the composition is preferably 30% by mass to 80% by mass, and more preferably 50% by mass to 70% by mass based on the total solid content of the composition. The amount of the alkali-soluble resin may be one or two or more. When two or more kinds are contained, the total amount is in the above range.

<聚合起始劑> <Polymerization initiator>

就進一步提昇感光度的觀點而言,本發明的組成物較佳為進而含有聚合起始劑。 From the viewpoint of further enhancing the sensitivity, the composition of the present invention preferably further contains a polymerization initiator.

作為本發明中的聚合起始劑,可使用以下所述的作為聚合起始劑為人所知者。 As the polymerization initiator in the present invention, those which are described below as a polymerization initiator can be used.

作為上述聚合起始劑,只要具有使上述聚合性化合物的聚合開始的能力,則並無特別限制,可自公知的聚合起始劑中適宜選擇。例如,較佳為對於紫外線區域至可見光線具有感光性者。另外,可為與經光激發的增感劑產生某種作用,而生成活性自由基的活性劑,亦可為如對應於單體的種類而使陽離子聚合開始的起始劑。 The polymerization initiator is not particularly limited as long as it has the ability to initiate polymerization of the polymerizable compound, and can be appropriately selected from known polymerization initiators. For example, it is preferred that the ultraviolet region has a sensitivity to visible light. Further, it may be an active agent which generates a living radical with a photo-excited sensitizer, and may also be an initiator which starts cationic polymerization corresponding to the type of the monomer.

另外,上述聚合起始劑較佳為含有至少1種如下的化合物,該化合物於約300nm~800nm(更佳為330nm~500nm)的範圍內至少具有約50的分子吸光係數。 Further, the polymerization initiator preferably contains at least one compound having a molecular absorption coefficient of at least about 50 in a range of from about 300 nm to 800 nm (more preferably from 330 nm to 500 nm).

作為上述聚合起始劑,例如可列舉:鹵化烴衍生物(例如具有三嗪骨架者、具有噁二唑骨架者等)、醯基氧化膦等醯基膦化合物、六芳基聯咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮等。 Examples of the polymerization initiator include a halogenated hydrocarbon derivative (for example, a triazine skeleton or a oxadiazole skeleton), a mercaptophosphine compound such as a mercaptophosphine oxide, a hexaarylbiimidazole, or an anthracene derivative. An hydrazine compound, an organic peroxide, a sulfur compound, a ketone compound, an aromatic sulfonium salt, a ketoxime ether, an aminoacetophenone compound, a hydroxyacetophenone or the like.

作為上述具有三嗪骨架的鹵化烴化合物,例如可列舉:若林等著,《日本化學會通報(Bull.Chem.Soc.Japan)》,42,2924(1969)中記載的化合物,英國專利1388492號說明書中記載的化合物,日本專利特開昭53-133428號公報中記載的化合物,德國專利3337024號說明書中記載的化合物,F.C.Schaefer等的《有機化學期刊(J.Org.Chem.)》;29,1527(1964)中記載的化合物, 日本專利特開昭62-58241號公報中記載的化合物,日本專利特開平5-281728號公報中記載的化合物,日本專利特開平5-34920號公報中記載的化合物,美國專利第4212976號說明書中所記載的化合物等。 Examples of the halogenated hydrocarbon compound having a triazine skeleton include a compound described in J. Lin et al., Bull. Chem. Soc. Japan, 42, 2924 (1969), British Patent No. 1,388,492. The compound described in the specification, the compound described in JP-A-53-133428, the compound described in the specification of German Patent No. 3337024, and the Journal of Organic Chemistry (J. Org. Chem.) by FC Schaefer et al. , the compound described in 1527 (1964), A compound described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The compound or the like described.

作為上述美國專利第4212976號說明書中所記載的化合物,例如可列舉具有噁二唑骨架的化合物(例如2-三氯甲基-5-苯基-1,3,4-噁二唑、2-三氯甲基-5-(4-氯苯基)-1,3,4-噁二唑、2-三氯甲基-5-(1-萘基)-1,3,4-噁二唑、2-三氯甲基-5-(2-萘基)-1,3,4-噁二唑、2-三溴甲基-5-苯基-1,3,4-噁二唑、2-三溴甲基-5-(2-萘基)-1,3,4-噁二唑;2-三氯甲基-5-苯乙烯基-1,3,4-噁二唑、2-三氯甲基-5-(4-氯苯乙烯基)-1,3,4-噁二唑、2-三氯甲基-5-(4-甲氧基苯乙烯基)-1,3,4-噁二唑、2-三氯甲基-5-(1-萘基)-1,3,4-噁二唑、2-三氯甲基-5-(4-正丁氧基苯乙烯基)-1,3,4-噁二唑、2-三溴甲基-5-苯乙烯基-1,3,4-噁二唑等)等。 Examples of the compound described in the above specification of U.S. Patent No. 4,212,976 include compounds having an oxadiazole skeleton (e.g., 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5-(4-chlorophenyl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(1-naphthyl)-1,3,4-oxadiazole , 2-trichloromethyl-5-(2-naphthyl)-1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2 -tribromomethyl-5-(2-naphthyl)-1,3,4-oxadiazole; 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2- Trichloromethyl-5-(4-chlorostyryl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(4-methoxystyryl)-1,3, 4-oxadiazole, 2-trichloromethyl-5-(1-naphthyl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(4-n-butoxystyrene Base)-1,3,4-oxadiazole, 2-tribromomethyl-5-styryl-1,3,4-oxadiazole, etc.).

另外,作為上述以外的聚合起始劑,可列舉:吖啶衍生物(例如9-苯基吖啶、1,7-雙(9,9'-吖啶基)庚烷等)、N-苯基甘胺酸等、聚鹵素化合物(例如四溴化碳、苯基三溴甲基碸、苯基三氯甲基酮等)、香豆素(coumarin)類(例如3-(2-苯并呋喃醯基(benzofuranoyl))-7-二乙胺基香豆素、3-(2-苯并呋喃甲醯基)-7-(1-吡咯啶基)香豆素、3-苯甲醯基-7-二乙胺基香豆素、3-(2-甲氧基苯甲醯基)-7-二乙胺基香豆素、3-(4-二甲胺基苯甲醯基)-7-二乙胺基香豆素、3,3'-羰基雙(5,7-二-正丙氧基香豆素)、3,3'-羰基雙(7-二乙 胺基香豆素)、3-苯甲醯基-7-甲氧基香豆素、3-(2-呋喃甲醯基)-7-二乙胺基香豆素、3-(4-二乙胺基桂皮醯基)-7-二乙胺基香豆素、7-甲氧基-3-(3-吡啶基羰基)香豆素、3-苯甲醯基-5,7-二丙氧基香豆素、7-苯并三唑-2-基香豆素,另外,日本專利特開平5-19475號公報、日本專利特開平7-271028號公報、日本專利特開2002-363206號公報、日本專利特開2002-363207號公報、日本專利特開2002-363208號公報、日本專利特開2002-363209號公報等中所記載的香豆素化合物等)、醯基氧化膦類(例如雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基-戊基苯基氧化膦、LucirinTPO等)、茂金屬類(例如雙(η5-2,4-環戊二烯-1-基)-雙(2,6-二氟-3-(1H-吡咯-1-基)-苯基)鈦、η5-環戊二烯基-η6-枯烯基-鐵(1+)-六氟磷酸酯(1-)等)、日本專利特開昭53-133428號公報、日本專利特公昭57-1819號公報、日本專利特公昭57-6096號公報、及美國專利第3615455號說明書中所記載的化合物等。 Further, examples of the polymerization initiator other than the above include an acridine derivative (for example, 9-phenyl acridine, 1,7-bis(9,9'-acridinyl)heptane, etc.), N-benzene. Glycine and the like, polyhalogen compounds (for example, carbon tetrabromide, phenyltribromomethylhydrazine, phenyltrichloromethyl ketone, etc.), coumarins (for example, 3-(2-benzophenone) Benzofuranoyl-7-diethylamine coumarin, 3-(2-benzofurancarbenyl)-7-(1-pyrrolidinyl)coumarin, 3-benzylidene -7-diethylamine coumarin, 3-(2-methoxybenzimidyl)-7-diethylamine coumarin, 3-(4-dimethylaminobenzylidene)- 7-Diethylamine coumarin, 3,3'-carbonylbis(5,7-di-n-propoxycoumarin), 3,3'-carbonyl bis(7-diethyl) Amino coumarin), 3-benzylidene-7-methoxycoumarin, 3-(2-furanyl)-7-diethylamine coumarin, 3-(4-di Ethyl cinnabarinyl)-7-diethylamine coumarin, 7-methoxy-3-(3-pyridylcarbonyl)coumarin, 3-benzylidene-5,7-dipropyl Oxycoumarin, 7-benzotriazol-2-ylcoumarin, and Japanese Patent Laid-Open No. Hei 5-19475, Japanese Patent Laid-Open No. Hei 7-271028, and Japanese Patent Laid-Open No. 2002-363206 In the case of the coumarin compound or the like described in JP-A-2002-363208, JP-A-2002-363208, JP-A-2002-363209, and the like, Bis(2,4,6-trimethylbenzylidene)-phenylphosphine oxide, bis(2,6-dimethoxybenzylidene)-2,4,4-trimethyl-pentyl Phenylphosphine oxide, LucirinTPO, etc.), metallocenes (eg bis(η5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrole-1-) Base)-phenyl)titanium, η5-cyclopentadienyl-η6-cumenyl-iron (1+)-hexafluorophosphate (1-), etc., Japanese Patent Laid-Open No. Sho 53-133428, Japanese Patent Special Proclamation No. 57-1819, Japan Publication No. Sho 57-6096 Split well, and compounds of U.S. Patent No. 3,615,455 described in the specification.

作為上述酮化合物,例如可列舉:二苯基酮、2-甲基二苯基酮、3-甲基二苯基酮、4-甲基二苯基酮、4-甲氧基二苯基酮、2-氯二苯基酮、4-氯二苯基酮、4-溴二苯基酮、2-羧基二苯基酮、2-乙氧基羰基二苯基酮、二苯基酮四羧酸或其四甲酯、4,4'-雙(二烷基胺基)二苯基酮類(例如4,4'-雙(二甲胺基)二苯基酮、4,4'-雙(二環己胺基)二苯基酮、4,4'-雙(二乙胺基)二苯基酮、4,4'-雙(二羥基乙胺基)二苯基酮、4-甲氧基-4'-二甲胺基二苯基酮、4,4'-二甲氧基 二苯基酮、4-二甲胺基二苯基酮、4-二甲胺基苯乙酮、苯偶醯(Benzil)、蒽醌、2-第三丁基蒽醌、2-甲基蒽醌、菲醌、氧雜蒽酮、硫雜蒽酮、2-氯-硫雜蒽酮、2,4-二乙基硫雜蒽酮、茀酮、2-苄基-二甲胺基-1-(4-嗎啉基苯基)-1-丁酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-1-丙酮、2-羥基-2-甲基-[4-(1-甲基乙烯基)苯基]丙醇寡聚物、安息香、安息香醚類(例如安息香甲醚、安息香乙醚、安息香丙醚、安息香異丙醚、安息香苯醚、苄基二甲基縮酮)、吖啶酮、氯吖啶酮、N-甲基吖啶酮、N-丁基吖啶酮、N-丁基-氯吖啶酮等。 Examples of the ketone compound include diphenyl ketone, 2-methyl diphenyl ketone, 3-methyl diphenyl ketone, 4-methyl diphenyl ketone, and 4-methoxy diphenyl ketone. , 2-chlorodiphenyl ketone, 4-chlorodiphenyl ketone, 4-bromodiphenyl ketone, 2-carboxydiphenyl ketone, 2-ethoxycarbonyldiphenyl ketone, diphenyl ketone tetracarboxylate Acid or its tetramethyl ester, 4,4'-bis(dialkylamino)diphenyl ketone (eg 4,4'-bis(dimethylamino)diphenyl ketone, 4,4'-double (dicyclohexylamino)diphenyl ketone, 4,4'-bis(diethylamino)diphenyl ketone, 4,4'-bis(dihydroxyethylamino)diphenyl ketone, 4-methyl Oxy-4'-dimethylaminodiphenyl ketone, 4,4'-dimethoxy Diphenyl ketone, 4-dimethylaminodiphenyl ketone, 4-dimethylaminoacetophenone, Benzil, hydrazine, 2-tert-butyl fluorene, 2-methyl hydrazine Anthracene, phenanthrenequinone, xanthone, thioxanthone, 2-chloro-thiaxanone, 2,4-diethylthiaxanone, anthrone, 2-benzyl-dimethylamino-1 -(4-morpholinylphenyl)-1-butanone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl-1-propanone, 2-hydroxy-2 -Methyl-[4-(1-methylvinyl)phenyl]propanol oligomers, benzoin, benzoin ethers (eg benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin phenyl ether) , benzyldimethylketal), acridone, chloroacridone, N-methylacridone, N-butylacridone, N-butyl-chloroacridone, and the like.

作為聚合起始劑,亦可適宜地使用羥基苯乙酮化合物、胺基苯乙酮化合物、及醯基膦化合物。更具體而言,例如亦可使用日本專利特開平10-291969號公報中所記載的胺基苯乙酮系起始劑、日本專利第4225898號公報中所記載的醯基氧化膦系起始劑。 As the polymerization initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and a mercaptophosphine compound can also be suitably used. More specifically, for example, an amino acetophenone-based initiator as described in JP-A-10-291969, and a sulfhydryl phosphine oxide-based initiator described in Japanese Patent No. 42258899 can be used. .

作為羥基苯乙酮系起始劑,可使用IRGACURE-184、DAROCUR-1173、IRGACURE-500、IRGACURE-2959、IRGACURE-127(商品名:均為巴斯夫(BASF)公司製造)。作為胺基苯乙酮系起始劑,可使用作為市售品的IRGACURE-907、IRGACURE-369、及IRGACURE-379(商品名:均為巴斯夫公司製造)。作為胺基苯乙酮系起始劑,亦可使用吸收波長與365nm或405nm等的長波光源匹配的日本專利特開2009-191179號公報中所記載的化合物。另外,作為醯基膦系起始劑,可使用作為市 售品的IRGACURE-819或DAROCUR-TPO(商品名:均為巴斯夫公司製造)。 As the hydroxyacetophenone-based initiator, IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, and IRGACURE-127 (trade names: all manufactured by BASF) can be used. As the aminoacetophenone-based initiator, IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF Corporation) which are commercially available products can be used. As the aminoacetophenone-based initiator, a compound described in JP-A-2009-191179, which is a wavelength of a long-wavelength source such as 365 nm or 405 nm, can be used. In addition, as a thiol phosphine initiator, it can be used as a city. IRGACURE-819 or DAROCUR-TPO (trade name: manufactured by BASF Corporation) sold in the product.

作為聚合起始劑,亦可較佳地列舉肟系化合物。作為肟系起始劑的具體例,可使用日本專利特開2001-233842號中記載的化合物、日本專利特開2000-80068號中記載的化合物、日本專利特開2006-342166號中記載的化合物。 As the polymerization initiator, a quinone compound is also preferably exemplified. Specific examples of the oxime-based initiators include the compounds described in JP-A-2001-233842, the compounds described in JP-A-2000-80068, and the compounds described in JP-A-2006-342166. .

作為本發明中可適宜用作聚合起始劑的肟衍生物等肟化合物,例如可列舉:3-苯甲醯氧基亞胺基丁烷-2-酮、3-乙醯氧基亞胺基丁烷-2-酮、3-丙醯氧基亞胺基丁烷-2-酮、2-乙醯氧基亞胺基戊烷-3-酮、2-乙醯氧基亞胺基-1-苯基丙烷-1-酮、2-苯甲醯氧基亞胺基-1-苯基丙烷-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁烷-2-酮、以及2-乙氧基羰氧基亞胺基-1-苯基丙烷-1-酮等。 As the hydrazine compound such as an anthracene derivative which can be suitably used as a polymerization initiator in the present invention, for example, 3-benzylideneoxyimidobutan-2-one and 3-ethyloxyimino group can be mentioned. Butan-2-one, 3-propenyloxyimidobutan-2-one, 2-ethyloxyiminopentan-3-one, 2-ethyloxyimino-1- -Phenylpropan-1-one, 2-benzylideneoxyimino-1-phenylpropan-1-one, 3-(4-toluenesulfonyloxy)iminobutan-2-one And 2-ethoxycarbonyloxyimino-1-phenylpropan-1-one and the like.

作為肟酯化合物,可列舉:《英國化學會志,普爾金會刊II(J.C.S.Perkin II)》(1979年)pp.1653-1660、J.C.S.Perkin II(1979年)pp.156-162、《光聚合物科學與技術雜誌(Journal of Photopolymer Science and Technology)》(1995年)pp.202-232、日本專利特開2000-66385號公報中記載的化合物,日本專利特開2000-80068號公報、日本專利特表2004-534797號公報、日本專利特開2006-342166號公報的各公報中所記載的化合物等。 As the oxime ester compound, for example, "The British Chemical Society, JC Perkin II" (1979) pp. 1653-1660, JCS Perkin II (1979) pp. 156-162, "Light" Compounds described in Journal of Photopolymer Science and Technology, 1995, pp. 202-232, and JP-A-2000-66385, Japanese Patent Laid-Open Publication No. 2000-80068, Japan A compound or the like described in each of the publications of Japanese Laid-Open Patent Publication No. Hei. No. 2006-342166.

市售品亦可適宜使用IRGACURE-OXE 01(巴斯夫公司製造)、IRGACURE-OXE 02(巴斯夫公司製造)。 Commercially available products such as IRGACURE-OXE 01 (manufactured by BASF Corporation) and IRGACURE-OXE 02 (manufactured by BASF Corporation) can be suitably used.

另外,作為上述記載以外的肟酯化合物,亦可使用咔唑 的N位上連結有肟的日本專利特表2009-519904號公報中所記載的化合物、二苯基酮部位上導入有雜取代基的美國專利第7626957號公報中所記載的化合物、色素部位上導入有硝基的日本專利特開2010-15025號公報及美國專利公開2009-292039號中記載的化合物、國際公開專利2009-131189號公報中所記載的酮肟系化合物、同一分子內含有三嗪骨架與肟骨架的美國專利7556910號公報中所記載的化合物、於405nm下具有吸收最大值且對於g射線光源具有良好的感光度的日本專利特開2009-221114號公報中記載的化合物等。 Further, as the oxime ester compound other than the above, carbazole can also be used. In the N-position, the compound described in Japanese Patent Publication No. 2009-519904, and the compound and the dye moiety described in U.S. Patent No. 7,626,957, to which a heterocyclic group is introduced at the diphenyl ketone site, are attached. A ketone-based compound described in Japanese Laid-Open Patent Publication No. 2010-15025, and a ketone-based compound described in International Patent Publication No. 2009-131189, and a triazine in the same molecule. The compound described in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei.

較佳為進而亦可適宜地使用日本專利特開2007-231000號公報、及日本專利特開2007-322744號公報中所記載的環狀肟化合物。環狀肟化合物之中,尤其日本專利特開2010-32985號公報、日本專利特開2010-185072號公報中所記載的於咔唑色素中縮環而成的環狀肟化合物具有高光吸收性,就高感光度化的觀點而言較佳。 The cyclic anthraquinone compound described in JP-A-2007-2320, and JP-A-2007-322744 is preferably used. Among the cyclic ruthenium compounds, the cyclic ruthenium compound which is condensed in the carbazole dye described in Japanese Patent Laid-Open Publication No. 2010-185072, and the like, has high light absorbing property. It is preferable from the viewpoint of high sensitivity.

另外,於肟化合物的特定部位具有不飽和鍵的日本專利特開2009-242469號公報中所記載的化合物藉由使活性自由基自聚合惰性自由基中再生而可達成高感光度化,亦可適宜地使用。 In addition, the compound described in JP-A-2009-242469, which has an unsaturated bond at a specific site of a ruthenium compound, can be highly reproducible by regenerating a living radical from a polymerization inert radical. Use as appropriate.

最佳為可列舉日本專利特開2007-269779號公報中所示的具有特定取代基的肟化合物、或日本專利特開2009-191061號公報中所示的具有硫代芳基的肟化合物。 The ruthenium compound having a specific substituent as shown in JP-A-2007-269779 or the ruthenium compound having a thioaryl group as shown in JP-A-2009-191061 is exemplified.

具體而言,作為肟系聚合起始劑,較佳為由下述式 (OX-1)所表示的化合物。再者,肟的N-O鍵可為(E)體的肟化合物,亦可為(Z)體的肟化合物,亦可為(E)體與(Z)體的混合物。 Specifically, as the oxime polymerization initiator, it is preferably represented by the following formula Compound represented by (OX-1). Further, the N-O bond of ruthenium may be a ruthenium compound of the (E) form, a ruthenium compound of the (Z) form, or a mixture of the (E) form and the (Z) form.

式(OX-1)中,R及B分別獨立地表示一價的取代基,A表示二價的有機基,Ar表示芳基。 In the formula (OX-1), R and B each independently represent a monovalent substituent, A represents a divalent organic group, and Ar represents an aryl group.

上述式(OX-1)中,作為由R所表示的一價的取代基,較佳為一價的非金屬原子團。 In the above formula (OX-1), a monovalent substituent represented by R is preferably a monovalent non-metal atomic group.

作為上述一價的非金屬原子團,可列舉:烷基、芳基、醯基、烷氧基羰基、芳氧基羰基、雜環基、烷硫基羰基、芳硫基羰基等。另外,該些基亦可具有1個以上的取代基。另外,上述取代基亦可由其他取代基進一步取代。 The monovalent non-metal atomic group may, for example, be an alkyl group, an aryl group, a decyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a heterocyclic group, an alkylthiocarbonyl group or an arylthiocarbonyl group. Further, these groups may have one or more substituents. Further, the above substituent may be further substituted with another substituent.

作為取代基,可列舉:鹵素原子、芳氧基、烷氧基羰基或芳氧基羰基、醯氧基、醯基、烷基、芳基等。 The substituent may, for example, be a halogen atom, an aryloxy group, an alkoxycarbonyl group or an aryloxycarbonyl group, a decyloxy group, a decyl group, an alkyl group or an aryl group.

作為可具有取代基的烷基,較佳為碳數為1~30的烷基,具體而言,可例示:甲基、乙基、丙基、丁基、己基、辛基、癸基、十二基、十八基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、環戊基、環己基、三氟甲基、2-乙基己基、苯甲醯甲基、1-萘甲醯基甲基、2-萘甲醯基甲基、4-甲基磺醯基苯甲醯甲基、 4-苯基磺醯基苯甲醯甲基、4-二甲胺基苯甲醯甲基、4-氰基苯甲醯甲基、4-甲基苯甲醯甲基、2-甲基苯甲醯甲基、3-氟苯甲醯甲基、3-三氟甲基苯甲醯甲基、及3-硝基苯甲醯甲基。 The alkyl group which may have a substituent is preferably an alkyl group having 1 to 30 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, an octyl group, a decyl group, and a decyl group. Diyl, octadecyl, isopropyl, isobutyl, t-butyl, tert-butyl, 1-ethylpentyl, cyclopentyl, cyclohexyl, trifluoromethyl, 2-ethylhexyl, Benzomethazine methyl, 1-naphthylmethylmethyl, 2-naphthylmethylmethyl, 4-methylsulfonyl benzhydrylmethyl, 4-phenylsulfonylbenzhydrylmethyl, 4-dimethylaminobenzimidylmethyl, 4-cyanobenzhydrylmethyl, 4-methylbenzimidylmethyl, 2-methylbenzene Formamidine methyl, 3-fluorobenzhydrylmethyl, 3-trifluoromethylbenzimidylmethyl, and 3-nitrobenzimidylmethyl.

作為可具有取代基的芳基,較佳為碳數為6~30的芳基,具體而言,可例示:苯基、聯苯基、1-萘基、2-萘基、9-蒽基、9-菲基、1-芘基、5-稠四苯基、1-茚基、2-薁(azulene)基、9-茀基、聯三苯基、聯四苯基、鄰甲苯基、間甲苯基、對甲苯基、二甲苯基、鄰異丙苯基、間異丙苯基及對異丙苯基、2,4,6-三甲苯基(mesityl)、並環戊二烯基、聯萘基、聯三萘基、聯四萘基、並環庚三烯基、伸聯苯基、二環戊二烯並苯基、丙[二]烯合茀基、苊基、乙烯合蒽基、丙烯合萘基、茀基、蒽基、聯蒽基、聯三蒽基、聯四蒽基、蒽醌基、菲基、三亞苯基、芘基、屈基、稠四苯基、七曜烯基、苉基、苝基、五苯基、稠五苯基、聯四苯基、六苯基、稠六苯基、茹基、蔻基、聯伸三萘基、七苯基、稠七苯基、芘蒽基、以及莪基。 The aryl group which may have a substituent is preferably an aryl group having 6 to 30 carbon atoms, and specific examples thereof include a phenyl group, a biphenyl group, a 1-naphthyl group, a 2-naphthyl group, and a 9-fluorenyl group. , 9-phenanthryl, 1-fluorenyl, 5-fused tetraphenyl, 1-indenyl, 2-azulene, 9-fluorenyl, triphenyl, biphenyl, o-tolyl, M-tolyl, p-tolyl, xylyl, o- cumyl, m-isopropylphenyl and p-cumyl, 2,4,6-trimethyl, mesityl, cyclopentadienyl, Binaphtyl, bis-naphthyl, tetratetraphthyl, cycloheptatrienyl, bisphenylene, dicyclopentadienyl phenyl, propyl [di] ene fluorenyl, fluorenyl, vinyl hydrazine Base, propylene naphthyl, anthracenyl, fluorenyl, hydrazino, hydrazinyl, hydrazino, fluorenyl, phenanthryl, triphenylene, anthracenyl, fluorenyl, fused tetraphenyl, quinone Alkenyl, fluorenyl, fluorenyl, pentaphenyl, fused pentaphenyl, tetraphenyl, hexaphenyl, hexaphenyl, ruthenyl, fluorenyl, tert-trinaphthyl, heptaphenyl, hexaphenyl Base, base, and base.

作為可具有取代基的醯基,較佳為碳數為2~20的醯基,具體而言,可例示:乙醯基、丙醯基、丁醯基、三氟乙醯基、戊醯基、苯甲醯基、1-萘甲醯基、2-萘甲醯基、4-甲基磺醯基苯甲醯基、4-苯基磺醯基苯甲醯基、4-二甲胺基苯甲醯基、4-二乙胺基苯甲醯基、2-氯苯甲醯基、2-甲基苯甲醯基、2-甲氧基苯甲醯基、2-丁氧基苯甲醯基、3-氯苯甲醯基、3-三氟甲基苯甲醯基、3-氰基苯甲醯基、3-硝基苯甲醯基、4-氟苯甲醯基、4-氰基苯甲醯基、以 及4-甲氧基苯甲醯基。 The fluorenyl group which may have a substituent is preferably a fluorenyl group having 2 to 20 carbon atoms, and specific examples thereof include an ethyl fluorenyl group, a propyl fluorenyl group, a butyl fluorenyl group, a trifluoroethyl fluorenyl group, a pentamidine group, and a benzene group. Formamyl, 1-naphthylmethyl, 2-naphthylmethyl, 4-methylsulfonylbenzimidyl, 4-phenylsulfonylbenzimidyl, 4-dimethylaminobenzamide Sulfhydryl, 4-diethylaminobenzhydryl, 2-chlorobenzhydryl, 2-methylbenzhydryl, 2-methoxybenzimidyl, 2-butoxybenzimidyl , 3-chlorobenzhydryl, 3-trifluoromethylbenzhydryl, 3-cyanobenzylidene, 3-nitrobenzhydryl, 4-fluorobenzhydryl, 4-cyano Benzoyl group And 4-methoxybenzhydryl.

作為可具有取代基的烷氧基羰基,較佳為碳數為2~20的烷氧基羰基,具體而言,可例示:甲氧基羰基、乙氧基羰基、丙氧基羰基、丁氧基羰基、己氧基羰基、辛氧基羰基、癸氧基羰基、十八烷氧基羰基、以及三氟甲氧基羰基。 The alkoxycarbonyl group which may have a substituent is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms, and specific examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, and a butoxy group. Alkylcarbonyl, hexyloxycarbonyl, octyloxycarbonyl, decyloxycarbonyl, octadecyloxycarbonyl, and trifluoromethoxycarbonyl.

作為可具有取代基的芳氧基羰基,具體而言,可例示:苯氧基羰基、1-萘氧基羰基、2-萘氧基羰基、4-甲基磺醯基苯氧基羰基、4-苯基磺醯基苯氧基羰基、4-二甲胺基苯氧基羰基、4-二乙胺基苯氧基羰基、2-氯苯氧基羰基、2-甲基苯氧基羰基、2-甲氧基苯氧基羰基、2-丁氧基苯氧基羰基、3-氯苯氧基羰基、3-三氟甲基苯氧基羰基、3-氰基苯氧基羰基、3-硝基苯氧基羰基、4-氟苯氧基羰基、4-氰基苯氧基羰基、以及4-甲氧基苯氧基羰基。 Specific examples of the aryloxycarbonyl group which may have a substituent include a phenoxycarbonyl group, a 1-naphthyloxycarbonyl group, a 2-naphthyloxycarbonyl group, a 4-methylsulfonylphenoxycarbonyl group, and 4 -phenylsulfonylphenoxycarbonyl, 4-dimethylaminophenoxycarbonyl, 4-diethylaminophenoxycarbonyl, 2-chlorophenoxycarbonyl, 2-methylphenoxycarbonyl, 2-methoxyphenoxycarbonyl, 2-butoxyphenoxycarbonyl, 3-chlorophenoxycarbonyl, 3-trifluoromethylphenoxycarbonyl, 3-cyanophenoxycarbonyl, 3- Nitrophenoxycarbonyl, 4-fluorophenoxycarbonyl, 4-cyanophenoxycarbonyl, and 4-methoxyphenoxycarbonyl.

作為可具有取代基的雜環基,較佳為含有氮原子、氧原子、硫原子或磷原子的芳香族或脂肪族的雜環。 The heterocyclic group which may have a substituent is preferably an aromatic or aliphatic heterocyclic ring containing a nitrogen atom, an oxygen atom, a sulfur atom or a phosphorus atom.

具體而言,可例示:噻吩基(thienyl group)、苯并[b]噻吩基(benzo[b]thienyl group)、萘并[2,3-b]噻吩基(naphtho[2,3-b]thienyl group)、噻蒽基(thianthrenyl group)、呋喃基(furyl group)、吡喃基(pyranyl group)、異苯并呋喃基(isobenzofuranyl group)、苯并哌喃基(chromenyl group)、基(xanthenyl group)、啡噁噻基(phenoxathiinyl group)、2H-吡咯基(2H-pyrrolyl group)、吡咯基(pyrrolyl group)、咪唑基(imidazolyl group)、吡唑基(pyrazolyl group)、吡啶基(pyridyl group)、吡 嗪基(pyrazinyl group)、嘧啶基(pyrimidinyl group)、噠嗪基(pyridazinyl group)、吲嗪基(indolizinyl group)、異吲哚基(isoindolyl group)、3H-吲哚基(3H-indolyl group)、吲哚基(indolyl group)、1H-吲唑基(1H-indazolyl group)、嘌呤基(purinyl group)、4H-喹嗪基(4H-quinolizinyl group)、異喹啉基(isoquinolyl group)、喹啉基(quinolyl group)、呔嗪基(phthalazinyl group)、啶基(naphthyridinyl group)、喹噁啉基(quinoxanilyl group)、喹唑啉基(quinazolinyl group)、啉基(cinnolinyl group)、喋啶基(pteridinyl group)、4aH-咔唑基(4aH-carbazolyl group)、咔唑基(carbazolyl group)、β-咔啉基(β-carbolinyl group)、啡啶基(phenanthridinyl group)、吖啶基(acridinyl group)、呸啶基(perimidinyl group)、啡啉基(phenanthrolinyl group)、啡嗪基(phenazinyl group)、啡呻嗪基(phenarsazinyl group)、異噻唑基(isothiazolyl group)、吩噻嗪基(phenothiazinyl group)、異噁唑基(isoxazolyl group)、呋吖基(furazanyl group)、啡噁嗪基(phenoxazinyl group)、異基(isochromanyl group)、基(chromanyl group)、吡咯啶基(pyrrolidinyl group)、吡咯啉基(pyrrolinyl group)、咪唑啶基(imidazolidinyl group)、咪唑啉基(imidazolinyl group)、吡唑啶基(pyrazolidinyl group)、吡唑啉基(pyrazolinyl group)、哌啶基(piperidyl group)、哌嗪基(piperazinyl group)、吲哚啉基(indolinyl group)、異吲哚啉基(isoindolinyl group)、啶基(quinuclidinyl group)、嗎啉基 (morpholinyl group)、以及氧雜蒽酮基(thioxantholyl group)。 Specifically, a thienyl group, a benzo[b]thienyl group, a naphtho[2,3-b]thienyl group (naphtho[2,3-b] can be exemplified. Thienyl group), thianthrenyl group, furyl group, pyranyl group, isobenzofuranyl group, chromenyl group, Xanthenyl group, phenoxathiinyl group, 2H-pyrrolyl group, pyrrolyl group, imidazolyl group, pyrazolyl group, pyridyl group (pyridyl group), pyrazinyl group, pyrimidinyl group, pyridazinyl group, indolizinyl group, isoindolyl group, 3H-fluorenyl group (3H-indolyl group), indolyl group, 1H-indazolyl group, purinyl group, 4H-quinolizinyl group, isoquinolyl group (isoquinolyl group), quinolyl group, phthalazinyl group, Naphthyridinyl group, quinoxanilyl group, quinazolinyl group, Cinnolinyl group, pteridinyl group, 4aH-carbazolyl group, carbazolyl group, β-carbolinyl group, phenidinyl group (phenanthridinyl group), acridinyl group, perimidinyl group, phenanthrolinyl group, phenazinyl group, phenarsazinyl group, isothiazolyl ( Isothiazolyl group), phenothiazinyl group, isoxazolyl group, furazanyl group, phenoxazinyl group, different Isochromanyl group, Chromyl group, pyrrolidinyl group, pyrrolinyl group, imidazolidinyl group, imidazolinyl group, pyrazolidinyl group, pyrazoline Pyrazolinyl group, piperidyl group, piperazinyl group, indolinyl group, isoindolinyl group, Quinuclidinyl group, morpholinyl group, and thioxantholyl group.

作為可具有取代基的烷硫基羰基,具體而言,可例示:甲硫基羰基、丙硫基羰基、丁硫基羰基、己硫基羰基、辛硫基羰基、癸硫基羰基、十八烷硫基羰基、以及三氟甲硫基羰基。 As the alkylthiocarbonyl group which may have a substituent, specifically, a methylthiocarbonyl group, a propylthiocarbonyl group, a butylthiocarbonyl group, a hexylthiocarbonyl group, a octylthiocarbonyl group, a sulfonylthiocarbonyl group, and an eighteenth An alkylthiocarbonyl group, and a trifluoromethylthiocarbonyl group.

作為可具有取代基的芳硫基羰基,具體而言,可列舉:1-萘硫基羰基、2-萘硫基羰基、4-甲基磺醯基苯硫基羰基、4-苯基磺醯基苯硫基羰基、4-二甲胺基苯硫基羰基、4-二乙胺基苯硫基羰基、2-氯苯硫基羰基、2-甲基苯硫基羰基、2-甲氧基苯硫基羰基、2-丁氧基苯硫基羰基、3-氯苯硫基羰基、3-三氟甲基苯硫基羰基、3-氰基苯硫基羰基、3-硝基苯硫基羰基、4-氟苯硫基羰基、4-氰基苯硫基羰基、以及4-甲氧基苯硫基羰基。 Specific examples of the arylthiocarbonyl group which may have a substituent include 1-naphthylthiocarbonyl, 2-naphthylthiocarbonyl, 4-methylsulfonylphenylthiocarbonyl, and 4-phenylsulfonylsulfonate. Phenylthiocarbonyl, 4-dimethylaminophenylthiocarbonyl, 4-diethylaminophenylthiocarbonyl, 2-chlorophenylthiocarbonyl, 2-methylphenylthiocarbonyl, 2-methoxy Phenylthiocarbonyl, 2-butoxyphenylthiocarbonyl, 3-chlorophenylthiocarbonyl, 3-trifluoromethylphenylthiocarbonyl, 3-cyanophenylthiocarbonyl, 3-nitrophenylthio A carbonyl group, a 4-fluorophenylthiocarbonyl group, a 4-cyanophenylthiocarbonyl group, and a 4-methoxyphenylthiocarbonyl group.

上述式(OX-1)中,作為由B所表示的一價的取代基,表示芳基、雜環基、芳基羰基、或雜環羰基。另外,該些基亦可具有1個以上的取代基。作為取代基,可例示上述取代基。另外,上述取代基亦可由其他取代基進一步取代。 In the above formula (OX-1), the monovalent substituent represented by B represents an aryl group, a heterocyclic group, an arylcarbonyl group or a heterocyclic carbonyl group. Further, these groups may have one or more substituents. The substituent may be exemplified as the substituent. Further, the above substituent may be further substituted with another substituent.

其中,特佳為以下所示的結構。 Among them, the structure shown below is particularly preferable.

下述的結構中,Y、X、及n的含義分別與後述的式(OX-2)中的Y、X、及n相同,較佳例亦相同。 In the following structures, the meanings of Y, X, and n are the same as Y, X, and n in the formula (OX-2) to be described later, and preferred examples are also the same.

上述式(OX-1)中,作為由A所表示的二價的有機基,可列舉碳數為1~12的伸烷基、伸環烷基、伸炔基。另外,該些基亦可具有1個以上的取代基。作為取代基,可例示上述取代基。另外,上述取代基亦可由其他取代基進一步取代。 In the above formula (OX-1), examples of the divalent organic group represented by A include an alkylene group having a carbon number of 1 to 12, a cycloalkylene group, and an alkynylene group. Further, these groups may have one or more substituents. The substituent may be exemplified as the substituent. Further, the above substituent may be further substituted with another substituent.

其中,作為式(OX-1)中的A,就提高感光度、抑制由加熱經時所引起的著色的觀點而言,較佳為未經取代的伸烷基、經烷基(例如甲基、乙基、第三丁基、十二基)取代的伸烷基、經烯基(例如乙烯基、烯丙基)取代的伸烷基、經芳基(例如苯基、對甲苯基、二甲苯基、枯烯基、萘基、蒽基、菲基、苯乙烯基)取代的伸烷基。 Among them, as A in the formula (OX-1), an unsubstituted alkylene group or an alkyl group (for example, a methyl group) is preferred from the viewpoint of improving sensitivity and suppressing coloration caused by heating over time. , ethyl, tert-butyl, dodecyl) substituted alkyl, alkenyl (eg vinyl, allyl) substituted alkyl, aryl (eg phenyl, p-tolyl, A tolyl, cumenyl, naphthyl, anthracenyl, phenanthryl, styryl) substituted alkylene group.

上述式(OX-1)中,作為由Ar所表示的芳基,較佳為碳數為6~30的芳基,另外,亦可具有取代基。作為取代基,可例示與導入至先前作為可具有取代基的芳基的具體例所列舉的取代芳基中的取代基相同者。 In the above formula (OX-1), the aryl group represented by Ar is preferably an aryl group having 6 to 30 carbon atoms, and may have a substituent. The substituent is the same as the substituent in the substituted aryl group exemplified as a specific example of the aryl group which may have a substituent.

其中,就提高感光度、抑制由加熱經時所引起的著色的觀點而言,較佳為經取代或未經取代的苯基。 Among them, a substituted or unsubstituted phenyl group is preferred from the viewpoint of improving sensitivity and suppressing coloring caused by heating.

於式(OX-1)中,就感光度的觀點而言,較佳為由上述式(OX-1)中的Ar與鄰接於Ar的S所形成的「SAr」的結構為以下所示的結構。再者,Me表示甲基,Et表示乙基。 In the formula (OX-1), from the viewpoint of sensitivity, it is preferable that the structure of "SAr" formed by Ar in the above formula (OX-1) and S adjacent to Ar is as follows. structure. Further, Me represents a methyl group, and Et represents an ethyl group.

肟化合物較佳為由下述式(OX-2)所表示的化合物。 The hydrazine compound is preferably a compound represented by the following formula (OX-2).

式(OX-2)中,R及X分別獨立地表示一價的取代基,A及Y分別獨立地表示二價的有機基,Ar表示芳基,n為0~5的整數。 In the formula (OX-2), R and X each independently represent a monovalent substituent, and A and Y each independently represent a divalent organic group, Ar represents an aryl group, and n is an integer of 0-5.

式(OX-2)中的R、A、及Ar的含義與上述式(OX-1) 中的R、A、及Ar相同,較佳例亦相同。 The meanings of R, A, and Ar in the formula (OX-2) and the above formula (OX-1) R, A, and Ar are the same, and preferred examples are also the same.

上述式(OX-2)中,作為由X所表示的一價的取代基,可列舉:烷基、芳基、烷氧基、芳氧基、醯氧基、醯基、烷氧基羰基、胺基、雜環基、鹵素原子。另外,該些基亦可具有1個以上的取代基。作為取代基,可例示上述取代基。另外,上述取代基亦可由其他取代基進一步取代。 In the above formula (OX-2), examples of the monovalent substituent represented by X include an alkyl group, an aryl group, an alkoxy group, an aryloxy group, a decyloxy group, a decyl group, and an alkoxycarbonyl group. Amine group, heterocyclic group, halogen atom. Further, these groups may have one or more substituents. The substituent may be exemplified as the substituent. Further, the above substituent may be further substituted with another substituent.

該些之中,作為式(OX-2)中的X,就提昇溶劑溶解性與長波長區域的吸收效率的觀點而言,較佳為烷基。 Among these, X in the formula (OX-2) is preferably an alkyl group from the viewpoint of improving solvent solubility and absorption efficiency in a long wavelength region.

另外,式(2)中的n表示0~5的整數,較佳為0~2的整數。 Further, n in the formula (2) represents an integer of 0 to 5, preferably an integer of 0 to 2.

上述式(OX-2)中,作為由Y所表示的二價的有機基,可列舉以下所示的結構。再者,以下所示的基中,「*」表示上述式(OX-2)中,Y與鄰接的碳原子的鍵結位置。 In the above formula (OX-2), examples of the divalent organic group represented by Y include the structures shown below. In addition, in the base shown below, "*" represents the bonding position of Y and the adjacent carbon atom in the above formula (OX-2).

其中,就高感光度化的觀點而言,較佳為下述所示的結構。 Among them, from the viewpoint of high sensitivity, the structure shown below is preferable.

進而,肟化合物較佳為由下述式(OX-3)所表示的化合物。 Further, the ruthenium compound is preferably a compound represented by the following formula (OX-3).

式(OX-3)中,R及X分別獨立地表示一價的取代基,A表示二價的有機基,Ar表示芳基,n為0~5的整數。 In the formula (OX-3), R and X each independently represent a monovalent substituent, A represents a divalent organic group, Ar represents an aryl group, and n is an integer of 0-5.

式(OX-3)中的R、X、A、Ar、及n的含義分別與上述式(OX-2)中的R、X、A、Ar、及n相同,較佳例亦相同。 The meanings of R, X, A, Ar, and n in the formula (OX-3) are the same as those of R, X, A, Ar, and n in the above formula (OX-2), and preferred examples are also the same.

以下表示可適宜地使用的肟化合物的具體例(C-4)~具體例(C-13),但本發明並不限定於該些具體例。 Specific examples (C-4) to specific examples (C-13) of the ruthenium compound which can be suitably used are shown below, but the present invention is not limited to these specific examples.

肟化合物是於350nm~500nm的波長區域中具有極大吸收波長者,較佳為於360nm~480nm的波長區域中具有吸收波長者,特佳為365nm及405nm的吸光度高的肟化合物。 The ruthenium compound has a maximum absorption wavelength in a wavelength region of 350 nm to 500 nm, preferably has an absorption wavelength in a wavelength region of 360 nm to 480 nm, and particularly preferably a ruthenium compound having a high absorbance at 365 nm and 405 nm.

就感光度的觀點而言,肟化合物於365nm或405nm下的莫耳吸光係數較佳為1,000~300,000,更佳為2,000~300,000,特佳為5,000~200,000。 From the viewpoint of sensitivity, the molar absorption coefficient of the cerium compound at 365 nm or 405 nm is preferably from 1,000 to 300,000, more preferably from 2,000 to 300,000, particularly preferably from 5,000 to 200,000.

化合物的莫耳吸光係數可使用公知的方法來測定,具體 而言,例如,較佳為藉由紫外可見分光光度計(瓦里安(Varian)公司製造的Carry-5 spectrophotometer),並利用乙酸乙酯溶劑,以0.01g/L的濃度進行測定。 The molar absorption coefficient of the compound can be determined by a known method, specifically For example, it is preferably measured by a UV-visible spectrophotometer (Carry-5 spectrophotometer manufactured by Varian) using an ethyl acetate solvent at a concentration of 0.01 g/L.

本發明中所使用的聚合起始劑視需要可將2種以上組合使用。 The polymerization initiator to be used in the invention may be used in combination of two or more kinds as needed.

作為本發明的組成物中所使用的聚合起始劑,就曝光感光度的觀點而言,較佳為選自由三鹵甲基三嗪化合物、苄基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三烯丙基咪唑二聚體、鎓化合物、苯并噻唑化合物、二苯基酮化合物、苯乙酮化合物及其衍生物、環戊二烯-苯-鐵錯合物及其鹽、鹵甲基噁二唑化合物、3-芳基取代香豆素化合物所組成的群組中的化合物。 The polymerization initiator used in the composition of the present invention is preferably selected from the group consisting of a trihalomethyltriazine compound, a benzyldimethylketal compound, and an α-hydroxyketone from the viewpoint of exposure sensitivity. Compound, α-amino ketone compound, mercaptophosphine compound, phosphine oxide compound, metallocene compound, hydrazine compound, triallyl imidazole dimer, hydrazine compound, benzothiazole compound, diphenyl ketone compound, phenylethyl A compound of the group consisting of a ketone compound and a derivative thereof, a cyclopentadiene-benzene-iron complex compound and a salt thereof, a halomethyl oxadiazole compound, and a 3-aryl-substituted coumarin compound.

更佳為三鹵甲基三嗪化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、肟化合物、三烯丙基咪唑二聚體、鎓化合物、二苯基酮化合物、苯乙酮化合物,最佳為選自由三鹵甲基三嗪化合物、α-胺基酮化合物、肟化合物、三烯丙基咪唑二聚體、二苯基酮化合物所組成的群組中的至少一種化合物。 More preferably, it is a trihalomethyltriazine compound, an α-amino ketone compound, a mercaptophosphine compound, a phosphine oxide compound, an anthraquinone compound, a triallyl imidazole dimer, an anthraquinone compound, a diphenylketone compound, or a phenylethyl group. The ketone compound is preferably at least one compound selected from the group consisting of a trihalomethyltriazine compound, an α-amino ketone compound, an anthraquinone compound, a triallyl imidazole dimer, and a diphenyl ketone compound. .

相對於組成物的總固體成分,本發明的組成物中所含有的聚合起始劑的含量(2種以上的情況下為總含量)較佳為0.1質量%以上、50質量%以下,更佳為0.5質量%以上、30質量%以下,進而更佳為1質量%以上、20質量%以下。於該範圍內,可獲得良好的感光度與圖案形成性。 The content of the polymerization initiator contained in the composition of the present invention (the total content in the case of two or more kinds) is preferably 0.1% by mass or more and 50% by mass or less, more preferably, based on the total solid content of the composition. It is 0.5% by mass or more and 30% by mass or less, and more preferably 1% by mass or more and 20% by mass or less. Within this range, good sensitivity and pattern formation properties can be obtained.

<界面活性劑> <Surfactant>

於本發明的組成物中,就進一步提昇塗佈性的觀點而言,亦可添加各種界面活性劑。作為界面活性劑,可使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界面活性劑等各種界面活性劑。 In the composition of the present invention, various surfactants may be added from the viewpoint of further improving coatability. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and an anthrone-based surfactant can be used.

尤其,本發明的組成物藉由含有氟系界面活性劑,作為塗佈液來製備時的液體特性(特別是流動性)進一步提昇,因此可進一步改善塗佈厚度的均勻性或省液性。 In particular, the composition of the present invention further improves liquid characteristics (particularly fluidity) when it is prepared as a coating liquid by containing a fluorine-based surfactant, so that uniformity of coating thickness or liquid-saving property can be further improved.

即,當使用應用了含有氟系界面活性劑的組成物的塗佈液來形成膜時,使被塗佈面與塗佈液的界面張力下降,藉此對於被塗佈面的潤濕性得到改善,且對於被塗佈面的塗佈性提昇。因此,即便於以少量的液量形成幾μm左右的薄膜的情況下,就可更適宜地進行厚度不均小的厚度均勻的膜形成的觀點而言亦有效。 In other words, when a film is formed using a coating liquid to which a composition containing a fluorine-based surfactant is applied, the interfacial tension between the surface to be coated and the coating liquid is lowered, whereby the wettability to the surface to be coated is obtained. Improved, and the applicability to the coated surface is improved. Therefore, even when a film having a thickness of about several μm is formed with a small amount of liquid, it is effective to form a film having a uniform thickness with a small thickness unevenness.

氟系界面活性劑中的氟含有率合適的是3質量%~40質量%,更佳為5質量%~30質量%,特佳為7質量%~25質量%。氟含有率為該範圍內的氟系界面活性劑就塗佈膜的厚度的均勻性或省液性的觀點而言有效,於組成物中的溶解性亦良好。 The fluorine content in the fluorine-based surfactant is suitably 3% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, particularly preferably 7% by mass to 25% by mass. Fluorine content rate The fluorine-based surfactant in this range is effective from the viewpoint of the uniformity of the thickness of the coating film or the liquid-saving property, and the solubility in the composition is also good.

作為氟系界面活性劑,例如可列舉:Megafac F171、Megafac F172、Megafac F173、Megafac F176、Megafac F177、Megafac F141、Megafac F142、Megafac F143、Megafac F144、Megafac R30、Megafac F437、Megafac F475、Megafac F479、Megafac F482、Megafac F554、Megafac F780、Megafac F781(以上,迪愛 生(DIC)(股份)製造),Fluorad FC430、Fluorad FC431、Fluorad FC171(以上,住友3M(Sumitomo 3M)(股份)製造),Surflon S-382、Surflon SC-101、Surflon SC-103、Surflon SC-104、Surflon SC-105、Surflon SC1068、Surflon SC-381、Surflon SC-383、Surflon S393、Surflon KH-40(以上,旭硝子(股份)製造),PF636、PF656、PF6320、PF6520、PF7002(歐諾法(OMNOVA)公司製造)等。 Examples of the fluorine-based surfactant include Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac F141, Megafac F142, Megafac F143, Megafac F144, Megafac R30, Megafac F437, Megafac F475, and Megafac F479. Megafac F482, Megafac F554, Megafac F780, Megafac F781 (above, Di Ai Manufactured by DIC (share), Fluorad FC430, Fluorad FC431, Fluorad FC171 (above, Sumitomo 3M), Surflon S-382, Surflon SC-101, Surflon SC-103, Surflon SC -104, Surflon SC-105, Surflon SC1068, Surflon SC-381, Surflon SC-383, Surflon S393, Surflon KH-40 (above, manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320, PF6520, PF7002 (Ouno) Law (made by OMNOVA), etc.

作為非離子系界面活性劑,具體而言,可列舉:甘油、三羥甲基丙烷、三羥甲基乙烷以及該些的乙氧基化物及丙氧基化物(例如甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙烯月桂醚、聚氧乙烯硬脂基醚、聚氧乙烯油醚、聚氧乙烯辛基苯醚、聚氧乙烯壬基苯醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、去水山梨醇脂肪酸酯(巴斯夫公司製造的Pluronic L10、L31、L61、L62、10R5、17R2、25R2,Tetronic304、701、704、901、904、150R1),Solsperse20000(日本路博潤(Lubrizol)(股份)製造)等。 Specific examples of the nonionic surfactant include glycerin, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, Glycerol ethoxylate, etc., polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene decyl phenyl ether, polyethylene glycol lauric Acid ester, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62, 10R5, 17R2, 25R2, Tetronic304, 701, 704, 901, 904, manufactured by BASF Corporation) 150R1), Solsperse20000 (made by Lubrizol (share)), etc.

作為陽離子系界面活性劑,具體而言,可列舉:酞菁衍生物(商品名:EFKA-745,森下產業(股份)製造),有機矽氧烷聚合物KP341(信越化學工業(股份)製造),(甲基)丙烯酸系(共)聚合物Polyflow No.75、No.90、No.95(共榮社化學(股份)製造),W001(裕商(股份)製造)等。 Specific examples of the cation-based surfactant include a phthalocyanine derivative (trade name: EFKA-745, manufactured by Morishita Industry Co., Ltd.), and an organic siloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.) (meth)acrylic (co)polymer Polyflow No. 75, No. 90, No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.), and the like.

作為陰離子系界面活性劑,具體而言,可列舉:W004、W005、W017(裕商(股份)公司製造)等。 Specific examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yusho Co., Ltd.).

作為矽酮系界面活性劑,例如可列舉:東麗.道康寧(股份)製造的「Toray Silicone DC3PA」、「Toray Silicone SH7PA」、「Toray Silicone DC11PA」、「Toray Silicone SH21PA」、「Toray Silicone SH28PA」、「Toray Silicone SH29PA」、「Toray Silicone SH30PA」、「Toray Silicone SH8400」,邁圖高新材料(Momentive Performance Materials)公司製造的「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、「TSF-4452」,信越化學工業(股份)公司製造的「KP341」、「KF6001」、「KF6002」,畢克化學(BYK Chemie)公司製造的「BYK307」、「BYK323」、「BYK330」等。 Examples of the anthrone-based surfactant include Toray. "Toray Silicone DC3PA", "Toray Silicone SH7PA", "Toray Silicone DC11PA", "Toray Silicone SH21PA", "Toray Silicone SH28PA", "Toray Silicone SH29PA", "Toray Silicone SH30PA", "Toray" manufactured by Dow Corning (share) Silicone SH8400", "TSF-4440", "TSF-4300", "TSF-4445", "TSF-4460", "TSF-4452" manufactured by Momentive Performance Materials, Shin-Etsu Chemical Industry ( "KP341", "KF6001", "KF6002" manufactured by the company, "BYK307", "BYK323", "BYK330" manufactured by BYK Chemie.

界面活性劑可僅使用1種,亦可組合2種以上。 The surfactant may be used alone or in combination of two or more.

相對於組成物的總質量,界面活性劑的添加量較佳為0.001質量%~2.0質量%,更佳為0.005質量%~1.0質量%。 The amount of the surfactant added is preferably from 0.001% by mass to 2.0% by mass, and more preferably from 0.005% by mass to 1.0% by mass based on the total mass of the composition.

<增感劑> <sensitizer>

以提昇聚合起始劑的自由基產生效率、感光波長的長波長化為目的,本發明的組成物亦可含有增感劑。作為可用於本發明的增感劑,較佳為對於上述光聚合起始劑,以電子轉移機制或能量轉移機制來增感者。作為可用於本發明的增感劑,可列舉屬於以下所列舉的化合物類、且於300nm~450nm的波長區域中具有吸收波長的化合物。 The composition of the present invention may contain a sensitizer for the purpose of increasing the radical generating efficiency of the polymerization initiator and the long wavelength of the photosensitive wavelength. As the sensitizer which can be used in the present invention, it is preferred to sensitize the above photopolymerization initiator with an electron transfer mechanism or an energy transfer mechanism. Examples of the sensitizer which can be used in the present invention include compounds which are exemplified below and which have an absorption wavelength in a wavelength region of from 300 nm to 450 nm.

作為較佳的增感劑的例子,可列舉屬於以下的化合物類、且於330nm~450nm的區域中具有吸收波長的化合物。 Examples of preferred sensitizers include compounds belonging to the following compounds and having an absorption wavelength in a region of from 330 nm to 450 nm.

例如可列舉:多核芳香族類(例如菲、蒽、芘、苝、聯 伸三苯、9,10-二烷氧基蒽)、二苯并哌喃類(例如螢光素(fluorescein)、曙紅、赤蘚紅(erythrosine)、玫瑰紅B(Rhodamine B)、孟加拉玫瑰紅(Rose Bengal))、硫雜蒽酮類(2,4-二乙基硫雜蒽酮、異丙基硫雜蒽酮、二乙基硫雜蒽酮、氯硫雜蒽酮)、花青類(例如硫雜羰花青、氧雜羰花青)、部花青類(例如部花青、羰部花青)、酞花青類、噻嗪類(例如噻嚀(thionine)、亞甲基藍、甲苯胺藍)、吖啶類(例如吖啶橙、氯黃素、吖啶黃素)、蒽醌類(例如蒽醌)、方酸內鎓鹽類(例如方酸內鎓鹽)、吖啶橙、香豆素類(例如7-二乙胺基-4-甲基香豆素)、香豆素酮、吩噻嗪類、啡嗪類、苯乙烯基苯類、偶氮化合物、二苯基甲烷、三苯基甲烷、二苯乙烯基苯類、咔唑類、卟啉、螺化合物、喹吖啶酮、靛藍、苯乙烯基、吡喃鎓化合物、吡咯亞甲基化合物、吡唑并三唑化合物、苯并噻唑化合物、巴比妥酸衍生物、硫代巴比妥酸衍生物、苯乙酮、二苯基酮、硫雜蒽酮、米其勒酮等芳香族酮化合物、N-芳基噁唑烷酮等雜環化合物等。 For example, polynuclear aromatics (for example, phenanthrene, anthracene, anthracene, pyrene, and hydrazine) Triphenyl, 9,10-dialkoxypurine, dibenzopyrans (such as fluorescein, blush, erythrosine, Rhodamine B, Bengal rose red) (Rose Bengal)), thioxanthone (2,4-diethylthioxanthone, isopropyl thioxanthone, diethyl thioxanthone, chlorothiazinone), cyanine (eg, thiacarbocyanine, oxacarbocyanine), merocyanines (eg, merocyanine, carbocyanine), phthalocyanines, thiazides (eg, thionine, methylene blue, A) Aniline blue), acridines (such as acridine orange, chlorsulfurin, acriflavine), terpenoids (such as hydrazine), squaraine guanidine salts (such as squaric acid ylide), acridine orange , coumarins (eg 7-diethylamino-4-methylcoumarin), coumarinones, phenothiazines, phenazines, styrylbenzenes, azo compounds, diphenyl Methane, triphenylmethane, distyrylbenzene, carbazole, porphyrin, spiro compound, quinacridone, indigo, styryl, pyranthene, pyrrolemethylene, pyrazolo Oxazole compound, benzothiazole compound, barbituric acid derivative , Thiobarbituric acid derivatives, acetophenone, benzophenone, thioxanthone, m which Le ketone aromatic ketone compound, N- oxazolidinone aryl group and heterocyclic compounds.

該些的市售品可適宜選擇來使用,例如可列舉:Kayacure DETX-S(日本化藥公司製造的硫雜蒽酮系化合物)等。 These commercially available products can be appropriately selected and used, and examples thereof include Kayacure DETX-S (a thioxanthone compound manufactured by Nippon Kayaku Co., Ltd.).

進而可列舉:歐州專利第568,993號說明書、美國專利第4,508,811號說明書、美國專利第5,227,227號說明書、日本專利特開2001-125255號公報、日本專利特開平11-271969號公報等中所記載的化合物等。 Further, the compounds described in the specification of the European Patent No. 568,993, the specification of the U.S. Patent No. 4,508,811, the specification of the U.S. Patent No. 5,227,227, the Japanese Patent Laid-Open No. 2001-125255, and the Japanese Patent Laid-Open No. Hei 11-271969 Wait.

組成物可含有增感劑,亦可不含增感劑,當含有增感劑 時,相對於本發明的組成物的總固體成分質量,增感劑的含量較佳為0,01質量%以上、10質量%以下,更佳為0.1質量%以上、2質量%以下。 The composition may contain a sensitizer or may not contain a sensitizer, and when it contains a sensitizer In the case of the total solid content of the composition of the present invention, the content of the sensitizer is preferably 0,01% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 2% by mass or less.

<紫外線吸收劑> <UV absorber>

本發明的組成物亦可含有紫外線吸收劑。作為紫外線吸收劑,可使用水楊酸酯系、二苯基酮系、苯并三唑系、取代丙烯腈系、三嗪系的紫外線吸收劑。 The composition of the present invention may also contain an ultraviolet absorber. As the ultraviolet absorber, a salicylate-based, diphenylketone-based, benzotriazole-based, substituted acrylonitrile-based or triazine-based ultraviolet absorber can be used.

作為水楊酸酯系紫外線吸收劑的例子,可列舉水楊酸苯酯、水楊酸對辛基苯酯、水楊酸對第三丁基苯酯等,作為二苯基酮系紫外線吸收劑的例子,可列舉2,2'-二羥基-4-甲氧基二苯基酮、2,2'-二羥基-4,4'-二甲氧基二苯基酮、2,2',4,4'-四羥基二苯基酮、2-羥基-4-甲氧基二苯基酮、2,4-二羥基二苯基酮、2-羥基-4-辛氧基二苯基酮等。另外,作為苯并三唑系紫外線吸收劑的例子,可列舉:2-(2'-羥基-3',5'-二-第三丁基苯基)-5-氯苯并三唑、2-(2'-羥基-3'-第三丁基-5'-甲基苯基)-5-氯苯并三唑、2-(2'-羥基-3'-第三戊基-5'-異丁基苯基)-5-氯苯并三唑、2-(2'-羥基-3'-異丁基-5'-甲基苯基)-5-氯苯并三唑、2-(2'-羥基-3'-異丁基-5'-丙基苯基)-5-氯苯并三唑、2-(2'-羥基-3',5'-二-第三丁基苯基)苯并三唑、2-(2'-羥基-5'-甲基苯基)苯并三唑、2-[2'-羥基-5'-(1,1,3,3-四甲基)苯基]苯并三唑等。 Examples of the salicylate-based ultraviolet absorber include phenyl salicylate, p-octylphenyl salicylate, p-tert-butylphenyl salicylate, and the like, and a diphenyl ketone-based ultraviolet absorber. Examples thereof include 2,2'-dihydroxy-4-methoxydiphenyl ketone, 2,2'-dihydroxy-4,4'-dimethoxydiphenyl ketone, 2,2', 4,4'-tetrahydroxydiphenyl ketone, 2-hydroxy-4-methoxydiphenyl ketone, 2,4-dihydroxydiphenyl ketone, 2-hydroxy-4-octyloxydiphenyl ketone Wait. Further, examples of the benzotriazole-based ultraviolet absorber include 2-(2'-hydroxy-3',5'-di-t-butylphenyl)-5-chlorobenzotriazole, and 2 -(2'-hydroxy-3'-t-butyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-third amyl-5' -isobutylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-isobutyl-5'-methylphenyl)-5-chlorobenzotriazole, 2- (2'-hydroxy-3'-isobutyl-5'-propylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3',5'-di-t-butyl Phenyl)benzotriazole, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, 2-[2'-hydroxy-5'-(1,1,3,3-tetra Methyl)phenyl]benzotriazole and the like.

作為取代丙烯腈系紫外線吸收劑的例子,可列舉:2-氰基-3,3-二苯基丙烯酸乙酯、2-氰基-3,3-二苯基丙烯酸2-乙基己酯 等。進而,作為三嗪系紫外線吸收劑的例子,可列舉:2-[4-[(2-羥基-3-十二烷氧基丙基)氧基]-2-羥苯基]-4,6-雙(2,4-二甲基苯基)-1,3,5-三嗪、2-[4-[(2-羥基-3-十三烷氧基丙基)氧基]-2-羥苯基]-4,6-雙(2,4-二甲基苯基)-1,3,5-三嗪、2-(2,4-二羥苯基)-4,6-雙(2,4-二甲基苯基)-1,3,5-三嗪等單(羥苯基)三嗪化合物;2,4-雙(2-羥基-4-丙氧基苯基)-6-(2,4-二甲基苯基)-1,3,5-三嗪、2,4-雙(2-羥基-3-甲基-4-丙氧基苯基)-6-(4-甲基苯基)-1,3,5-三嗪、2,4-雙(2-羥基-3-甲基-4-己氧基苯基)-6-(2,4-二甲基苯基)-1,3,5-三嗪等雙(羥苯基)三嗪化合物;2,4-雙(2-羥基-4-丁氧基苯基)-6-(2,4-二丁氧基苯基)-1,3,5-三嗪、2,4,6-三(2-羥基-4-辛氧基苯基)-1,3,5-三嗪、2,4,6-三[2-羥基-4-(3-丁氧基-2-羥基丙氧基)苯基]-1,3,5-三嗪等三(羥苯基)三嗪化合物等。 Examples of the substituted acrylonitrile-based ultraviolet absorber include ethyl 2-cyano-3,3-diphenylacrylate and 2-ethylhexyl 2-cyano-3,3-diphenylacrylate. Wait. Further, examples of the triazine-based ultraviolet absorber include 2-[4-[(2-hydroxy-3-dodecyloxypropyl)oxy]-2-hydroxyphenyl]-4,6. - bis(2,4-dimethylphenyl)-1,3,5-triazine, 2-[4-[(2-hydroxy-3-tridecyloxypropyl)oxy]-2- Hydroxyphenyl]-4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis ( Mono(hydroxyphenyl)triazine compound such as 2,4-dimethylphenyl)-1,3,5-triazine; 2,4-bis(2-hydroxy-4-propoxyphenyl)-6 -(2,4-dimethylphenyl)-1,3,5-triazine, 2,4-bis(2-hydroxy-3-methyl-4-propoxyphenyl)-6-(4 -methylphenyl)-1,3,5-triazine, 2,4-bis(2-hydroxy-3-methyl-4-hexyloxyphenyl)-6-(2,4-dimethyl Bis(hydroxyphenyl)triazine compound such as phenyl)-1,3,5-triazine; 2,4-bis(2-hydroxy-4-butoxyphenyl)-6-(2,4-di Butoxyphenyl)-1,3,5-triazine, 2,4,6-tris(2-hydroxy-4-octyloxyphenyl)-1,3,5-triazine, 2,4, a tris(hydroxyphenyl)triazine compound such as 6-tris[2-hydroxy-4-(3-butoxy-2-hydroxypropoxy)phenyl]-1,3,5-triazine.

本發明的組成物將作為共軛二烯系化合物的由下述通式(I)所表示的化合物用作紫外線吸收劑亦較佳。 The composition of the present invention is preferably used as a UV absorber as a compound represented by the following formula (I) as a conjugated diene compound.

上述通式(I)中,R1及R2分別獨立地表示氫原子、碳原子數為1~20的烷基、或碳原子數為6~20的芳基,R1與R2彼此可相同,亦可不同,但不同時表示氫原子。 In the general formula (I), R 1 and R 2 each independently represent a hydrogen atom, an alkyl group having a carbon number of 1 to 20 carbon atoms or an aryl group having 6 to 20, R & lt another 1 and R 2 may The same or different, but not the hydrogen atom at the same time.

由R1、R2所表示的碳原子數為1~20的烷基例如可列舉甲基、乙基、丙基、正丁基、正己基、環己基、正癸基、正十二基、正十八基、二十基、甲氧基乙基、乙氧基丙基、2-乙基己基、羥乙基、氯丙基、N,N-二乙胺基丙基、氰基乙基、苯乙基、苄基、對第三丁基苯乙基、對第三辛基苯氧基乙基、3-(2,4-二-第三戊基苯氧基)丙基、乙氧基羰基甲基、2-(2-羥基乙氧基)乙基、2-呋喃基乙基等,較佳為甲基、乙基、丙基、正丁基、正己基。 Examples of the alkyl group having 1 to 20 carbon atoms represented by R 1 and R 2 include a methyl group, an ethyl group, a propyl group, a n-butyl group, a n-hexyl group, a cyclohexyl group, a n-decyl group, and a n-dodecyl group. N-octadecyl, eicosyl, methoxyethyl, ethoxypropyl, 2-ethylhexyl, hydroxyethyl, chloropropyl, N,N-diethylaminopropyl, cyanoethyl , phenethyl, benzyl, p-tert-butylphenethyl, p-t-octylphenoxyethyl, 3-(2,4-di-p-pentylphenoxy)propyl, ethoxy A carbonylcarbonyl group, a 2-(2-hydroxyethoxy)ethyl group, a 2-furylethyl group or the like is preferably a methyl group, an ethyl group, a propyl group, a n-butyl group or a n-hexyl group.

由R1、R2所表示的烷基可具有取代基,作為具有取代基的烷基的取代基,可列舉:烷基、芳基、烷氧基、芳氧基、醯氧基、鹵素原子、醯基胺基、醯基、烷硫基、芳硫基、羥基、氰基、烷氧基羰基、芳氧基羰基、取代胺甲醯基、取代胺磺醯基、硝基、取代胺基、烷基磺醯基、芳基磺醯基等。 The alkyl group represented by R 1 and R 2 may have a substituent, and examples of the substituent of the alkyl group having a substituent include an alkyl group, an aryl group, an alkoxy group, an aryloxy group, a decyloxy group, and a halogen atom. , mercaptoamine, mercapto, alkylthio, arylthio, hydroxy, cyano, alkoxycarbonyl, aryloxycarbonyl, substituted aminecarboxamidine, substituted amine sulfonyl, nitro, substituted amine , alkylsulfonyl, arylsulfonyl and the like.

由R1、R2所表示的碳原子數為6~20的芳基可為單環,亦可為縮合環,且可為具有取代基的取代芳基、未經取代的芳基的任一種。例如可列舉:苯基、1-萘基、2-萘基、蒽基、菲基、茚基、苊基、茀基等。作為具有取代基的取代芳基的取代基,例如可列舉:烷基、芳基、烷氧基、芳氧基、醯氧基、鹵素原子、醯基胺基、醯基、烷硫基、芳硫基、羥基、氰基、烷氧基羰基、芳氧基羰基、取代胺甲醯基、取代胺磺醯基、硝基、取代胺基、烷基磺醯基、芳基磺醯基等。其中,較佳為經取代或未經取代的苯基、1-萘基、2-萘基。 The aryl group having 6 to 20 carbon atoms represented by R 1 and R 2 may be a single ring or a condensed ring, and may be any of a substituted aryl group having a substituent or an unsubstituted aryl group. . For example, a phenyl group, a 1-naphthyl group, a 2-naphthyl group, an anthracenyl group, a phenanthryl group, an anthryl Examples of the substituent of the substituted aryl group having a substituent include an alkyl group, an aryl group, an alkoxy group, an aryloxy group, a decyloxy group, a halogen atom, a decylamino group, a decyl group, an alkylthio group, and an aromatic group. A thio group, a hydroxy group, a cyano group, an alkoxycarbonyl group, an aryloxycarbonyl group, a substituted aminemethanyl group, a substituted amine sulfonyl group, a nitro group, a substituted amine group, an alkylsulfonyl group, an arylsulfonyl group or the like. Among them, a substituted or unsubstituted phenyl group, a 1-naphthyl group or a 2-naphthyl group is preferred.

另外,R1及R2可與氮原子一同形成環狀胺基。作為環 狀胺基,例如可列舉:哌啶基、嗎啉基、吡咯烷基、六氫氮雜並(hexahydroazepino)基、哌嗪基等。 Further, R 1 and R 2 may form a cyclic amine group together with a nitrogen atom. Examples of the cyclic amino group include a piperidinyl group, a morpholinyl group, a pyrrolidinyl group, a hexahydroazepino group, and a piperazinyl group.

上述之中,作為R1、R2,較佳為碳數為1~8的低級的烷基(例如甲基、乙基、異丙基、丁基、第二丁基、第三丁基、戊基、第三戊基、己基、辛基、2-乙基己基、第三辛基等)、或者經取代或未經取代的苯基(例如甲苯基、苯基、甲氧苯基(anisyl)、2,4,6-三甲苯基、氯苯基、2,4-二-第三戊基苯基等)。另外,R1與R2鍵結並包含由式中的N所表示的氮原子來形成環(例如哌啶環、吡咯啶環、嗎啉環等)亦較佳。 Among the above, R 1 and R 2 are preferably a lower alkyl group having 1 to 8 carbon atoms (e.g., methyl group, ethyl group, isopropyl group, butyl group, second butyl group, and third butyl group). Pentyl, tert-amyl, hexyl, octyl, 2-ethylhexyl, trioctyl, etc.), or substituted or unsubstituted phenyl (eg tolyl, phenyl, methoxyphenyl (anisyl) ), 2,4,6-trimethylphenyl, chlorophenyl, 2,4-di-third-pentylphenyl, etc.). Further, it is also preferred that R 1 and R 2 are bonded to each other and a nitrogen atom represented by N in the formula is formed to form a ring (e.g., a piperidine ring, a pyrrolidine ring, a morpholine ring, etc.).

上述通式(I)中,R3及R4表示吸電子基。此處,吸電子基是哈米特(Hammett)的取代基常數σp值(以下,簡稱為「σp值」)為0.20以上、1.0以下的吸電子基。較佳為σp值為0.30以上、0.8以下的吸電子基。 In the above formula (I), R 3 and R 4 represent an electron withdrawing group. Here, the electron-withdrawing group is an electron-withdrawing group having a substituent constant σ p value (hereinafter, abbreviated as "σ p value") of Hammett of 0.20 or more and 1.0 or less. An electron withdrawing group having a σ p value of 0.30 or more and 0.8 or less is preferable.

哈米特法則是為了定量地論述取代基對苯衍生物的反應或平衡所帶來的影響,由L.P.Ha mmett於1935年所倡導的經驗法則,其於今日被廣泛承認妥當性。藉由哈米特法則所求出的取代基常數有σp值與σm值,該些值於許多普通書籍中有記載,例如詳見J.A.Dean編寫的「《蘭格化學手冊(Lange's Handbook of Chemistry)》」第12版、1979年(麥格羅希爾(Mc Graw-Hill))或「化學的領域增刊」、122號、96頁~103頁、1979年(南江堂),《化學評論(Chemical Reviews)》,91卷、165頁~195頁、1991年。於本發明中,並不意味著僅限定於具有該些書籍中所記載的 文獻已知的值的取代基,即便該值為文獻未知的值,只要在根據哈米特法則進行測定時包含於其範圍內,則當然亦包含該取代基。 The Hammett's rule is to quantitatively discuss the effects of substituents on the reaction or balance of benzene derivatives. The rule of thumb advocated by LPHammett in 1935 is widely recognized today. The substituent constants obtained by Hammett's law have σ p values and σ m values, which are described in many common books. For example, see "Lange's Handbook of Chemistry" by JADean. )"" 12th Edition, 1979 (Mc Graw-Hill) or "Chemical Field Supplement", 122, 96-103 pages, 1979 (Nanjiang Hall), Chemical Review (Chemical Review) Reviews), 91, 165-195, 1991. In the present invention, it is not meant to be limited only to the substituents having the values known from the documents described in the books, even if the value is unknown to the literature, as long as it is included in the measurement according to the Hammett's law. Within the scope, the substituent is of course also included.

作為上述σp值為0.20以上、1.0以下的拉電子基的具體例,可列舉:醯基、醯氧基、胺甲醯基、烷氧基羰基、芳氧基羰基、氰基、硝基、二烷基膦醯基、二芳基膦醯基、二芳基氧膦基、烷基亞磺醯基、芳基亞磺醯基、烷基磺醯基、芳基磺醯基、磺醯氧基、醯硫基、胺磺醯基、硫氰酸酯基、硫羰基、由至少2個以上的鹵素原子取代的烷基、由至少2個以上的鹵素原子取代的烷氧基、由至少2個以上的鹵素原子取代的芳氧基、由至少2個以上的鹵素原子取代的烷基胺基、由至少2個以上的鹵素原子取代的烷硫基、由σp值為0.20以上的其他拉電子基取代的芳基、雜環基、氯原子、溴原子、偶氮基、或硒氰酸酯基。該些取代基之中,可進而具有取代基的基可進一步具有如先前所列舉的取代基。 Specific examples of the electron withdrawing group having a σ p value of 0.20 or more and 1.0 or less include an anthracenyl group, a decyloxy group, an amine carbaryl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, and a nitro group. Dialkylphosphonium, diarylphosphonium, diarylphosphinyl, alkylsulfinyl, arylsulfinyl, alkylsulfonyl, arylsulfonyl, sulfonium oxide a thiol group, an anthracene group, an sulfonyl group, a thiocyanate group, a thiocarbonyl group, an alkyl group substituted with at least two or more halogen atoms, an alkoxy group substituted with at least two or more halogen atoms, and at least 2 One or more halogen atom-substituted aryloxy groups, an alkylamino group substituted with at least two or more halogen atoms, an alkylthio group substituted with at least two or more halogen atoms, and other pulls having a σ p value of 0.20 or more An electron-substituted aryl group, a heterocyclic group, a chlorine atom, a bromine atom, an azo group, or a selenocyanate group. Among the substituents, the group which may further have a substituent may further have a substituent as exemplified above.

上述之中,於本發明中,作為R3,較佳為選自氰基、-COOR5、-CONHR5、-COR5、-SO2R5中的基,另外,作為R4,較佳為選自氰基、-COOR6、-CONHR6、-COR6、-SO2R6中的基。R5及R6分別獨立地表示碳原子數為1~20的烷基、或碳原子數為6~20的芳基。由R5、R6所表示的碳原子數為1~20的烷基、碳原子數為6~20的芳基的含義與上述R1、R2中的情況相同,較佳的形態亦相同。 Among the above, in the present invention, R 3 is preferably a group selected from the group consisting of a cyano group, -COOR 5 , -CONHR 5 , -COR 5 , and -SO 2 R 5 , and further preferably R 4 . It is a group selected from the group consisting of a cyano group, -COOR 6 , -CONHR 6 , -COR 6 , and -SO 2 R 6 . R 5 and R 6 each independently represent an alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms. The meaning of the alkyl group having 1 to 20 carbon atoms and the aryl group having 6 to 20 carbon atoms represented by R 5 and R 6 is the same as in the case of the above R 1 and R 2 , and the preferred embodiment is also the same. .

該些之中,作為R3、R4,較佳為醯基、胺甲醯基、烷氧基羰基、芳氧基羰基、氰基、硝基、烷基磺醯基、芳基磺醯基、 磺醯氧基、胺磺醯基,特佳為醯基、胺甲醯基、烷氧基羰基、芳氧基羰基、氰基、烷基磺醯基、芳基磺醯基、磺醯氧基、胺磺醯基。 Among these, as R 3 and R 4 , a mercapto group, an amine mercapto group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, a nitro group, an alkylsulfonyl group or an arylsulfonyl group is preferred. , sulfonyloxy, sulfonyl, especially preferably fluorenyl, amine carbyl, alkoxycarbonyl, aryloxycarbonyl, cyano, alkylsulfonyl, arylsulfonyl, sulfonium oxide Base, amine sulfonyl.

另外,R3及R4可相互鍵結而形成環。 Further, R 3 and R 4 may be bonded to each other to form a ring.

另外,可變成自上述R1、R2、R3、及R4的至少1個經由連結基與乙烯基鍵結而成的單體衍生出的聚合物的形態。亦可為與其他單體的共聚物。於共聚物的情況下,作為其他單體,有丙烯酸、α-氯丙烯酸、α-烷基丙烯酸(例如自甲基丙烯酸等丙烯酸類衍生出的酯,較佳為低級烷基酯及醯胺,例如丙烯醯胺、甲基丙烯醯胺、第三丁基丙烯醯胺、丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸正丙酯、丙烯酸正丁酯、丙烯酸2-乙基己酯、丙烯酸正己酯、甲基丙烯酸辛酯、及甲基丙烯酸月桂酯、亞甲基雙丙烯醯胺等)、乙烯酯(例如乙酸乙烯酯、丙酸乙烯酯及月桂酸乙烯酯等)、丙烯腈、甲基丙烯腈、芳香族乙烯基化合物(例如苯乙烯及其衍生物,例如乙烯基甲苯、二乙烯基苯、乙烯基苯乙酮、磺化苯乙烯、及苯乙烯亞磺酸等)、衣康酸、檸康酸、巴豆酸、偏二氯乙烯、乙烯基烷基醚(例如乙烯基乙醚等)、順丁烯二酸酯、N-乙烯基-2-吡咯啶酮、N-乙烯基吡啶、2-乙烯基吡啶及4-乙烯基吡啶等。 Further, it may be in the form of a polymer derived from a monomer in which at least one of R 1 , R 2 , R 3 and R 4 is bonded to a vinyl group via a linking group. It may also be a copolymer with other monomers. In the case of a copolymer, as other monomers, there are acrylic acid, α-chloroacrylic acid, and α-alkylacrylic acid (for example, an ester derived from an acrylic acid such as methacrylic acid, preferably a lower alkyl ester and a decylamine, For example, acrylamide, methacrylamide, butyl butyl decylamine, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-propyl acrylate, n-butyl acrylate, acrylic acid 2-ethylhexyl ester, n-hexyl acrylate, octyl methacrylate, and lauryl methacrylate, methylene bis acrylamide, etc., vinyl esters (such as vinyl acetate, vinyl propionate and vinyl laurate) Ester, etc.), acrylonitrile, methacrylonitrile, aromatic vinyl compounds (such as styrene and its derivatives, such as vinyl toluene, divinylbenzene, vinyl acetophenone, sulfonated styrene, and styrene Sulfonic acid, etc., itaconic acid, citraconic acid, crotonic acid, vinylidene chloride, vinyl alkyl ether (such as vinyl ether, etc.), maleic acid ester, N-vinyl-2-pyrrole Pyridone, N-vinylpyridine, 2-vinylpyridine and 4-vinyl Pyridine and so on.

其中,特佳為丙烯酸酯、甲基丙烯酸酯、芳香族乙烯基化合物。 Among them, particularly preferred are acrylates, methacrylates, and aromatic vinyl compounds.

亦可併用上述共聚單體化合物的2種以上。例如可使 用:丙烯酸正丁酯與二乙烯基苯、苯乙烯與甲基丙烯酸甲酯、丙烯酸甲酯與甲基丙烯酸酯等。 Two or more kinds of the above comonomer compounds may be used in combination. For example, Use: n-butyl acrylate and divinyl benzene, styrene and methyl methacrylate, methyl acrylate and methacrylate.

以下,表示由上述通式(I)所表示的化合物的較佳的具體例[例示化合物(1)~例示化合物(14)]。但是,於本發明中,並不受該些具體例限制。 Hereinafter, preferred specific examples of the compound represented by the above formula (I) [exemplary compound (1) to exemplary compound (14)] are shown. However, in the present invention, it is not limited by these specific examples.

本發明中的由通式(I)所表示的化合物可藉由日本專利特公昭44-29620號公報、日本專利特開53-128333號公報、日 本專利特開昭61-169831號公報、日本專利特開昭63-53543號公報、日本專利特開昭63-53544號公報、日本專利特開昭63-56651號公報中所記載的方法來合成。 The compound represented by the general formula (I) in the present invention can be exemplified by Japanese Patent Publication No. Sho 44-29620, Japanese Patent Laid-Open No. 53-128333 The method described in the Japanese Patent Laid-Open Publication No. Sho 63-53543, the Japanese Patent Laid-Open Publication No. SHO-63-53544, and the Japanese Patent Laid-Open Publication No. Sho 63-56651 .

作為市售品,例如可列舉二乙胺基-苯基磺醯基-戊二烯酸系紫外線吸收劑(富士膠片精細化學(FUJIFILM Finechemicals)製造,商品名:DPO)等。 The commercially available product is, for example, a diethylamino-phenylsulfonyl-pentadienoic acid-based ultraviolet absorber (manufactured by FUJIFILM Fine Chemicals, trade name: DPO).

於本發明中,上述各種紫外線吸收劑可單獨使用一種,亦可將兩種以上組合使用。 In the present invention, the above various ultraviolet absorbers may be used alone or in combination of two or more.

本發明的組成物可含有紫外線吸收劑,亦可不含紫外線吸收劑,當含有紫外線吸收劑時,相對於本發明的組成物的總固體成分質量,紫外線吸收劑的含量較佳為0.001質量%以上、1質量%以下,更佳為0.01質量%以上、0.1質量%以下。 The composition of the present invention may contain an ultraviolet absorber or may not contain an ultraviolet absorber. When the ultraviolet absorber is contained, the content of the ultraviolet absorber is preferably 0.001% by mass or more based on the total solid content of the composition of the present invention. 1% by mass or less, more preferably 0.01% by mass or more and 0.1% by mass or less.

<矽烷偶合劑> <decane coupling agent>

於本發明的組成物中,就進一步提昇與基板的密接性的觀點而言,可使用矽烷偶合劑。 In the composition of the present invention, a decane coupling agent can be used from the viewpoint of further improving the adhesion to the substrate.

矽烷偶合劑較佳為具有烷氧基矽烷基作為可與無機材料進行化學鍵結的水解性基者。另外,較佳為具有與有機樹脂之間進行相互作用或形成鍵結而顯示親和性的基,較佳為具有(甲基)丙烯醯基、苯基、巰基、縮水甘油基、氧雜環丁基作為此種基者,其中,較佳為具有(甲基)丙烯醯基或縮水甘油基者。 The decane coupling agent preferably has an alkoxyalkyl group as a hydrolyzable group capable of chemically bonding with an inorganic material. Further, it is preferred to have a group which exhibits affinity with an organic resin to form an bond or form a bond, and preferably has a (meth)acryl fluorenyl group, a phenyl group, a fluorenyl group, a glycidyl group or an oxetane. As such a group, those having a (meth) acrylonitrile group or a glycidyl group are preferred.

即,作為本發明中所使用的矽烷偶合劑,較佳為具有烷氧基矽烷基與(甲基)丙烯醯基或環氧基的化合物,具體而言,可列 舉下述結構的(甲基)丙烯醯基-三甲氧基矽烷化合物、縮水甘油基-三甲氧基矽烷化合物等。 That is, as the decane coupling agent used in the present invention, a compound having an alkoxyalkyl group, a (meth) acryl fluorenyl group or an epoxy group is preferable, and specifically, it can be listed. The (meth)acryloyl-trimethoxydecane compound, glycidyl-trimethoxydecane compound, etc. which have the following structures are mentioned.

另外,本發明中的矽烷偶合劑為一分子中具有至少2種反應性不同的官能基的矽烷化合物亦較佳,特佳為具有胺基與烷氧基作為官能基者。作為此種矽烷偶合劑,例如有:N-β-胺基乙基-γ-胺基丙基-甲基二甲氧基矽烷(信越化學工業公司製造,商品名:KBM-602)、N-β-胺基乙基-γ-胺基丙基-三甲氧基矽烷(信越化學工業公司製造,商品名:KBM-603)、N-β-胺基乙基-γ-胺基丙基-三乙氧基矽烷(信越化學工業公司製造,商品名:KBE-602)、γ-胺基丙基-三甲氧基矽烷(信越化學工業公司製造,商品名:KBM-903)、γ-胺基丙基-三乙氧基矽烷(信越化學工業公司製造,商品名:KBE-903)、3-甲基丙烯醯氧基丙基三甲氧基矽烷(信越化學工業公司製造,商品名:KBM-503)等。 Further, the decane coupling agent in the present invention is preferably a decane compound having at least two functional groups having different reactivity in one molecule, and particularly preferably an amine group and an alkoxy group as a functional group. As such a decane coupling agent, for example, N-β-aminoethyl-γ-aminopropyl-methyldimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM-602), N- β-Aminoethyl-γ-aminopropyl-trimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM-603), N-β-aminoethyl-γ-aminopropyl-tri Ethoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE-602), γ-aminopropyl-trimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM-903), γ-aminopropyl Base-triethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE-903), 3-methacryloxypropyltrimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM-503) Wait.

作為使用矽烷偶合劑時的添加量,於本發明中所使用的組成物中的總固體成分中,較佳為0.1質量%~5.0質量%的範圍, 更佳為0.2質量%~3.0質量%。 The amount of the total solid content in the composition used in the present invention is preferably in the range of 0.1% by mass to 5.0% by mass, as the amount of the decane coupling agent used. More preferably, it is 0.2 mass% - 3.0 mass%.

<填料> <filler>

本發明的組成物中可進而含有填料。作為可用於本發明的填料,可列舉利用矽烷偶合劑進行了表面處理的球狀的二氧化矽。 The composition of the present invention may further contain a filler. Examples of the filler which can be used in the present invention include spherical cerium oxide which has been surface-treated with a decane coupling agent.

藉由本發明的組成物含有填料,就可獲得耐久性高的圖案的觀點而言較佳(尤其,於由阻焊劑包覆的金屬配線的配線密度高的情況等對阻焊劑要求更嚴格的耐久性的情況下,上述效果顯著)。 When the composition of the present invention contains a filler, it is preferable from the viewpoint of obtaining a pattern having high durability (in particular, when the wiring density of the metal wiring covered with the solder resist is high, the solder resist is required to be more durable. In the case of sex, the above effects are remarkable).

藉由使用利用矽烷偶合劑進行了表面處理的球狀的二氧化矽,組成物的熱循環試驗耐受性、保存穩定性提昇,例如,於經過如熱循環試驗般的嚴酷的環境後,亦可維持與剛形成圖案之後相同的良好的形狀。 By using a spherical cerium oxide surface-treated with a decane coupling agent, the composition has improved thermal cycle test resistance and storage stability, for example, after undergoing a harsh environment such as a heat cycle test. The same good shape as that immediately after the pattern formation can be maintained.

再者,球狀填料中的「球狀」是指粒子形狀並非為針狀、柱狀、不定形,只要帶有弧度即可,未必需要是「真球狀」,但作為具有代表性的「球狀」的型態,可列舉「真球狀」。 In addition, the "spherical shape" in the spherical filler means that the shape of the particles is not needle-shaped, columnar, or amorphous, and it is not necessary to be "true spherical" as long as it has a curvature, but it is representative. The "spherical shape" can be referred to as "true spherical shape".

上述填料為球狀可藉由利用掃描型電子顯微鏡(Scanning Electron Microscope,SEM)進行觀察來確認。 The filler is spherical and can be confirmed by observation using a scanning electron microscope (SEM).

上述填料的一次粒子的體積平均粒徑並無特別限制,可根據目的而適宜選擇,但較佳為0.05μm~3μm,更佳為0.1μm~1μm。上述填料的一次粒子的體積平均粒徑為上述範圍內時有利,其原因在於:由觸變性的顯現所引起的加工性的下降得到抑 制,且最大粒徑亦不會變大,因此所獲得的硬化膜中的異物的附著或由塗膜的不均勻所引起的缺陷的產生得到抑制。 The volume average particle diameter of the primary particles of the filler is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 0.05 μm to 3 μm, more preferably 0.1 μm to 1 μm. It is advantageous when the volume average particle diameter of the primary particles of the above filler is within the above range, because the decrease in workability due to the appearance of thixotropy is suppressed. Since the maximum particle diameter does not become large, the adhesion of the foreign matter in the obtained cured film or the generation of defects caused by the unevenness of the coating film is suppressed.

上述填料的一次粒子的體積平均粒徑可藉由動態光散射法粒徑分布測定裝置來測定。 The volume average particle diameter of the primary particles of the above filler can be measured by a dynamic light scattering particle size distribution measuring apparatus.

上述填料可藉由使用分散劑或黏合劑來分散。如上所述,就硬化性的觀點而言,特佳為側鏈上具有交聯性基的鹼可溶性黏合劑聚合物。 The above filler may be dispersed by using a dispersing agent or a binder. As described above, from the viewpoint of hardenability, an alkali-soluble binder polymer having a crosslinkable group in a side chain is particularly preferred.

-表面處理- - Surface treatment -

其次,對填料的表面處理進行說明。填料的表面處理並無特別限制,可根據目的而適宜選擇,但較佳為藉由矽烷偶合劑來包覆二氧化矽的處理。 Next, the surface treatment of the filler will be described. The surface treatment of the filler is not particularly limited and may be appropriately selected according to the purpose, but it is preferably a treatment of coating cerium oxide by a decane coupling agent.

-矽烷偶合劑- -decane coupling agent -

作為用於填料的表面處理的矽烷偶合劑,並無特別限制,可根據目的而適宜選擇,但較佳為選自烷氧基矽烷基、氯矽烷基、及乙醯氧基矽烷基中的至少1種官能基(以下,亦稱為「第1官能基」,及選自(甲基)丙烯醯基、胺基及環氧基中的至少1種官能基(以下,亦稱為「第2官能基」),第2官能基更佳為(甲基)丙烯醯基、或胺基,第2官能基進而更佳為(甲基)丙烯醯基。若上述第2官能基為(甲基)丙烯醯基,則就保存穩定性或熱循環試驗(Thermal Cycle Test,TCT)耐受性的觀點而言有利。 The decane coupling agent used for the surface treatment of the filler is not particularly limited and may be appropriately selected according to the purpose, but is preferably at least selected from the group consisting of an alkoxyalkyl group, a chloroalkyl group, and an ethoxyalkyl group. One type of functional group (hereinafter also referred to as "first functional group"), and at least one functional group selected from the group consisting of a (meth) acrylonitrile group, an amine group, and an epoxy group (hereinafter, also referred to as "second The functional group "), the second functional group is more preferably a (meth) acrylonitrile group or an amine group, and the second functional group is more preferably a (meth) acrylonitrile group. If the second functional group is (methyl group) The acrylonitrile group is advantageous from the viewpoint of storage stability or thermal cycle test (TCT) tolerance.

另外,亦可同樣較佳地使用日本專利特公平7-68256號公報中所記載的矽烷偶合劑,該矽烷偶合劑具有選自烷氧基矽烷 基、氯矽烷基、及乙醯氧基矽烷基中的至少1種作為第1官能基,且具有選自咪唑基、烷基咪唑基、及乙烯基咪唑基中的至少1種作為第2官能基。 Further, a decane coupling agent described in Japanese Patent Publication No. Hei 7-68256, which has an alkoxydecane selected from the group, is also preferably used. At least one of a group, a chloroalkylene group, and an ethoxylated decyl group is a first functional group, and at least one selected from the group consisting of an imidazole group, an alkylimidazolyl group, and a vinylimidazolyl group is used as the second functional group. base.

作為上述矽烷偶合劑,並無特別限制,例如可適宜地列舉:γ-胺基丙基三乙氧基矽烷、N-(β-胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-(β-胺基乙基)-γ-胺基丙基甲基二甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、日本專利特公平7-68256號公報中所記載的α-[[3-(三甲氧基矽烷基)丙氧基]甲基]-咪唑-1-乙醇、2-乙基-4-甲基-α-[[3-(三甲氧基矽烷基)丙氧基]甲基]-咪唑-1-乙醇、4-乙烯基-α-[[3-(三甲氧基矽烷基)丙氧基]甲基]-咪唑-1-乙醇、2-乙基-4-甲基咪唑并丙基三甲氧基矽烷、及該些的鹽、分子內縮合物、分子間縮合物等。該些矽烷偶合劑可單獨使用1種,亦可將2種以上組合使用。 The decane coupling agent is not particularly limited, and examples thereof include γ-aminopropyltriethoxydecane and N-(β-aminoethyl)-γ-aminopropyltrimethoxydecane. , N-(β-Aminoethyl)-γ-aminopropylmethyldimethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyldi Methoxy decane, γ-methyl propylene methoxy propyl trimethoxy decane, γ-methyl propylene methoxy propyl methyl dimethoxy decane, as described in Japanese Patent Publication No. Hei 7-68256 α-[[3-(Trimethoxydecyl)propoxy]methyl]-imidazol-1-ethanol, 2-ethyl-4-methyl-α-[[3-(trimethoxydecyl) Propyloxy]methyl]-imidazol-1-ethanol, 4-vinyl-α-[[3-(trimethoxydecyl)propyloxy]methyl]-imidazole-1-ethanol, 2-B 4-methylimidazolyltrimethoxydecane, and salts, intramolecular condensates, intermolecular condensates, and the like. These decane coupling agents may be used alone or in combination of two or more.

由上述矽烷偶合劑所進行的球狀的二氧化矽的表面處理可事先僅對該球狀的二氧化矽進行處理(以下亦將該情況稱為「前處理」),亦可與組成物中所含有的其他填料的一部分或全部一併進行處理。 The surface treatment of the spherical cerium oxide by the decane coupling agent may be performed only in advance of the spherical cerium oxide (hereinafter referred to as "pretreatment"), or in the composition Some or all of the other fillers contained are treated together.

作為進行前處理的方法,並無特別限制,例如可列舉:乾式法、水溶液法、有機溶劑法、噴霧法等方法。進行前處理的溫度並無特別限制,但較佳為常溫~200℃。 The method for pretreatment is not particularly limited, and examples thereof include a dry method, an aqueous solution method, an organic solvent method, and a spray method. The temperature at which the pretreatment is carried out is not particularly limited, but is preferably from room temperature to 200 °C.

進行前處理時添加觸媒亦較佳。作為該觸媒,並無特別限制,例如可列舉:酸、鹼、金屬化合物、有機金屬化合物等。 It is also preferable to add a catalyst when performing pretreatment. The catalyst is not particularly limited, and examples thereof include an acid, a base, a metal compound, and an organometallic compound.

進行前處理時的矽烷偶合劑的添加量並無特別限制,相對於球狀的二氧化矽100質量份,較佳為0.01質量份~50質量份的範圍,更佳為0.05質量份~50質量份的範圍。當上述添加量為上述範圍內時,可進行足以顯現效果的表面處理,且由處理後的球狀的二氧化矽的凝聚所引起的處理性的下降得到抑制。 The amount of the decane coupling agent to be added in the pretreatment is not particularly limited, and is preferably in the range of 0.01 part by mass to 50 parts by mass, more preferably 0.05 part by mass to 50% by mass based on 100 parts by mass of the spherical cerium oxide. The scope of the share. When the amount of addition is within the above range, a surface treatment sufficient for the effect of development can be performed, and the decrease in handleability due to aggregation of the spherical cerium oxide after the treatment can be suppressed.

上述矽烷偶合劑因上述第1官能基與基板表面、球狀的二氧化矽表面、及黏合劑的活性基進行反應,進而上述第2官能基與黏合劑的羧基及乙烯性不飽和基進行反應,故具有提昇基板與感光層的密接性的作用。另一方面,上述矽烷偶合劑因反應性高,故當將其添加至組成物中時,存在如下的情況:因擴散作用,於保存過程中主要是第2官能基進行反應或失活,貨架期(shelf life)或適用期(pot life)變短。 The decane coupling agent reacts with the surface of the substrate, the spherical ceria surface, and the active group of the binder by the first functional group, and further reacts the second functional group with the carboxyl group and the ethylenically unsaturated group of the binder. Therefore, it has the function of improving the adhesion between the substrate and the photosensitive layer. On the other hand, since the above-mentioned decane coupling agent has high reactivity, when it is added to the composition, there is a case where the second functional group is mainly reacted or deactivated during storage in the storage process due to diffusion. The shelf life or pot life becomes shorter.

但是,若使用如上述般利用矽烷偶合劑對上述球狀的二氧化矽進行前處理而成者,則擴散作用得到抑制,藉此貨架期或適用期的問題得到大幅度改善,亦可製成一液型。進而,當對球狀的二氧化矽實施前處理時,因可自由地選擇攪拌條件、溫度條件、及觸媒的使用等條件,故與不進行前處理而添加的情況相比,可顯著提高矽烷偶合劑的第1官能基與球狀的二氧化矽中的活性基的反應率。因此,尤其於無電解鍍金、無電解鍍焊料、耐濕負荷試驗等苛刻的要求特性方面可獲得非常良好的結果。另外,藉 由進行上述前處理,可減少矽烷偶合劑的使用量,並可進一步改善貨架期及適用期。 However, if the spherical ceria is pretreated with a decane coupling agent as described above, the diffusion action is suppressed, and the problem of shelf life or pot life is greatly improved, and it can also be produced. One liquid type. Further, when the spherical cerium oxide is pretreated, the conditions such as the stirring condition, the temperature condition, and the use of the catalyst can be freely selected, so that it can be remarkably improved as compared with the case where the pretreatment is not added. The reaction rate between the first functional group of the decane coupling agent and the active group in the spherical cerium oxide. Therefore, very good results can be obtained particularly in the demanding characteristics such as electroless gold plating, electroless plating soldering, and moisture load resistance test. In addition, borrow By performing the above pretreatment, the amount of the decane coupling agent used can be reduced, and the shelf life and pot life can be further improved.

作為由可用於本發明的矽烷偶合劑進行了表面處理的球狀的二氧化矽,例如可列舉:電氣化學工業:FB、SFP系列,龍森:1-FX,東亞合成:HSP系列,扶桑化學工業:SP系列等。 As the spherical cerium oxide which has been surface-treated by the decane coupling agent which can be used in the present invention, for example, the electrochemistry industry: FB, SFP series, Ronson: 1-FX, East Asian synthesis: HSP series, Fuso Chemical Industry: SP series, etc.

組成物可含有填料,亦可不含填料,當含有填料時,相對於組成物的總固體成分質量的填料的含量並無特別限制,可根據目的而適宜選擇,但較佳為總固體成分的1質量%~40質量%,更佳為2質量%~30質量%,進而更佳為3質量%~20質量%。當添加量為上述範圍內時,達成線膨脹係數的充分的下降、且所形成的硬化膜的脆化得到抑制、使用永久圖案來形成配線時的作為配線的保護膜的功能得以充分地顯現。 The composition may or may not contain a filler. When the filler is contained, the content of the filler relative to the total solid content of the composition is not particularly limited, and may be appropriately selected according to the purpose, but is preferably 1 of the total solid content. The mass % to 40% by mass, more preferably 2% by mass to 30% by mass, still more preferably 3% by mass to 20% by mass. When the amount of addition is within the above range, a sufficient decrease in the coefficient of linear expansion is achieved, and embrittlement of the formed cured film is suppressed, and the function as a protective film for wiring when wiring is formed using a permanent pattern is sufficiently exhibited.

<分散劑> <dispersant>

於本發明中,尤其當鎢化合物為鎢微粒子時,為了提昇鎢化合物於組成物中的分散性、分散穩定性,可藉由公知的分散劑進行分散後使用。 In the present invention, in particular, when the tungsten compound is tungsten fine particles, in order to enhance the dispersibility and dispersion stability of the tungsten compound in the composition, it can be used after being dispersed by a known dispersing agent.

作為可用於本發明的分散劑,可列舉:高分子分散劑[例如聚醯胺胺與其鹽、聚羧酸與其鹽、高分子量不飽和酸酯、改質聚胺基甲酸酯、改質聚酯、改質聚(甲基)丙烯酸酯、(甲基)丙烯酸系共聚物、萘磺酸甲醛縮合物]、及聚氧乙烯烷基磷酸酯、聚氧乙烯烷基胺、烷醇胺等界面活性劑等。 As the dispersant which can be used in the present invention, a polymer dispersant (for example, polyamine amine and a salt thereof, a polycarboxylic acid and a salt thereof, a high molecular weight unsaturated acid ester, a modified polyurethane, a modified polycondensation) are exemplified. Ester, modified poly(meth)acrylate, (meth)acrylic copolymer, naphthalenesulfonic acid formaldehyde condensate], and polyoxyethylene alkyl phosphate, polyoxyethylene alkylamine, alkanolamine and other interfaces Active agent, etc.

高分子分散劑根據其結構而可進一步分類為直鏈狀高 分子、末端改質型高分子、接枝型高分子、嵌段型高分子。 The polymer dispersant can be further classified into a linear high according to its structure. Molecules, terminal modified polymers, graft polymers, and block polymers.

作為具有針對表面的固定部位的末端改質型高分子,例如可列舉:日本專利特開平3-112992號公報、日本專利特表2003-533455號公報等中所記載的於末端具有磷酸基的高分子,日本專利特開2002-273191號公報等中所記載的於末端具有磺酸基的高分子,日本專利特開平9-77994號公報等中所記載的具有有機色素的部分骨架或雜環的高分子,日本專利特開2008-29901號公報等中所記載的利用一末端具有羥基或胺基的寡聚物或聚合物與酸酐進行改質所製造的高分子等。另外,日本專利特開2007-277514號公報中所記載的於高分子末端導入有2個以上針對紅外線遮蔽材表面的固定部位(酸基、鹼性基、有機色素的部分骨架或雜環等)的高分子的分散穩定性亦優異,而較佳。 The terminal-modified polymer having a fixed portion on the surface is, for example, a high-phosphoric acid group at the terminal described in JP-A-3-112992, JP-A-2003-533455, and the like. A polymer having a sulfonic acid group at the terminal, as described in JP-A-2002-273191, and a partial skeleton or a heterocyclic ring having an organic dye described in Japanese Laid-Open Patent Publication No. Hei 9-77994. A polymer produced by modifying an oligomer or a polymer having a hydroxyl group or an amine group at one end and an acid anhydride, as described in JP-A-2008-29901, and the like. In addition, two or more fixed sites (acid groups, basic groups, partial skeletons of organic dyes, heterocyclic rings, etc.) for the surface of the infrared shielding material are introduced into the polymer end as described in JP-A-2007-277514. The dispersion stability of the polymer is also excellent, and is preferable.

作為具有針對表面的固定部位的接枝型高分子,例如可列舉:日本專利特開昭54-37082號公報、日本專利特表平8-507960號公報、日本專利特開2009-258668號公報等中所記載的聚(低級伸烷基亞胺)與聚酯的反應產物,日本專利特開平9-169821號公報等中所記載的聚烯丙胺與聚酯的反應產物,日本專利特開2009-203462號公報中所記載的具有鹼性基與酸性基的兩性分散樹脂,日本專利特開平10-339949號公報、日本專利特開2004-37986號公報等中所記載的大分子單體與氮原子單體的共聚物,日本專利特開2003-238837號公報、日本專利特開2008-9426號公報、日本專利特開2008-81732號公報等中所記載的具有有機 色素的部分骨架或雜環的接枝型高分子,日本專利特開2010-106268號公報等中所記載的大分子單體與含有酸基的單體的共聚物等。 For example, JP-A-54-37082, JP-A-8-507960, JP-A-2009-258668, and the like are exemplified. The reaction product of the poly(allyl alkylene imine) and the polyester described in the above, and the reaction product of the polyallylamine and the polyester described in Japanese Patent Laid-Open Publication No. Hei 9-169821, etc., Japanese Patent Laid-Open No. 2009- The amphoteric dispersion resin having a basic group and an acidic group, and the macromonomer and nitrogen atom described in JP-A-2004-37986, and the like. The monomer copolymer is organic as described in JP-A-2003-238837, JP-A-2008-9426, JP-A-2008-81732, and the like. A copolymer of a macromolecular monomer and an acid group-containing monomer described in JP-A-2010-106268, and the like.

作為藉由自由基聚合來製造具有針對表面的固定部位的接枝型高分子時所使用的大分子單體,可使用公知的大分子單體,可列舉:東亞合成(股份)製造的大分子單體AA-6(末端基為甲基丙烯醯基的聚甲基丙烯酸甲酯)、AS-6(末端基為甲基丙烯醯基的聚苯乙烯)、AN-6S(末端基為甲基丙烯醯基的苯乙烯與丙烯腈的共聚物)、AB-6(末端基為甲基丙烯醯基的聚丙烯酸丁酯),大賽璐(Daicel)化學工業(股份)製造的Placcel FM5(甲基丙烯酸2-羥基乙酯的ε-己內酯5莫耳當量加成物)、FA10L(丙烯酸2-羥基乙酯的ε-己內酯10莫耳當量加成物),以及日本專利特開平2-272009號公報中所記載的聚酯系大分子單體等。該些之中,尤其就組成物中的紅外線遮蔽材的分散性、分散穩定性、及使用紅外線遮蔽材的組成物所顯示的顯影性的觀點而言,特佳為柔軟性且親溶劑性尤其優異的聚酯系大分子單體,進而,最佳為由日本專利特開平2-272009號公報中記載的聚酯系大分子單體所表示的聚酯系大分子單體。 As a macromonomer to be used for the production of a graft-type polymer having a fixed portion on the surface by radical polymerization, a known macromonomer can be used, and examples thereof include macromolecules manufactured by East Asia Synthetic Co., Ltd. Monomer AA-6 (polymethyl methacrylate with terminal group of methacryl fluorenyl), AS-6 (polystyrene with terminal methacryloyl group), AN-6S (terminal group is methyl Acrylate-based copolymer of styrene and acrylonitrile), AB-6 (polybutyl acrylate of methacryl fluorenyl group), Placcel FM5 (Methyl) manufactured by Daicel Chemical Industry Co., Ltd. Ε-caprolactone 5 molar equivalent adduct of 2-hydroxyethyl acrylate), FA10L (ε-caprolactone 10 molar equivalent adduct of 2-hydroxyethyl acrylate), and Japanese Patent Special Open 2 A polyester-based macromonomer described in the publication No. -272009. Among these, in particular, from the viewpoint of dispersibility of the infrared shielding material in the composition, dispersion stability, and developability exhibited by the composition using the infrared shielding material, it is particularly preferable that it is soft and solvophilic. A polyester-based macromonomer represented by the polyester-based macromonomer described in JP-A No. 2-272009 is preferred.

作為具有針對表面的固定部位的嵌段型高分子,較佳為日本專利特開2003-49110號公報、日本專利特開2009-52010號公報等中所記載的嵌段型高分子。 The block type polymer described in the above-mentioned Japanese Patent Publication No. 2003-49110, and the like.

另外,可適宜選擇公知的分散劑或界面活性劑來使用。 Further, a known dispersant or surfactant can be appropriately selected and used.

作為此種具體例,可列舉:畢克化學公司製造的「Disperbyk-101(聚醯胺胺磷酸鹽)、107(羧酸酯)、110(含有酸基的共聚物)、130(聚醯胺)、161、162、163、164、165、166、170(高分子共聚物)」、「BYK-P104、P105(高分子量不飽和聚羧酸)」,EFKA公司製造的「EFKA4047、4050~4010~4165(聚胺基甲酸酯系)、EFKA4330~4340(嵌段共聚物)、4400~4402(改質聚丙烯酸酯)、5010(聚酯醯胺)、5765(高分子量聚羧酸鹽)、6220(脂肪酸聚酯)、6745(酞青素衍生物)」,Ajinomoto Fine-Techno公司製造的「Ajisper PB821、PB822、PB880、PB881」,共榮社化學公司製造的「Florene TG-710(胺基甲酸酯寡聚物)」、「Polyflow No.50E、No.300(丙烯酸系共聚物)」,楠本化成公司製造的「Disparlon KS-860、873SN、874、#2150(脂肪族多元羧酸)、#7004(聚醚酯)、DA-703-50、DA-705、DA-725」,花王公司製造的「Demol RN、N(萘磺酸甲醛聚縮合物)、MS、C、SN-B(芳香族磺酸甲醛聚縮合物)、「Homogenol L-18(高分子聚羧酸)」、「Emalgen920、930、935、985(聚氧乙烯壬基苯醚)」、「Acetamin86(硬脂基胺乙酸酯)」,日本路博潤(股份)製造的「Solsperse5000(酞青素衍生物)、13240(聚酯胺)、3000、17000、27000(末端部具有功能部的高分子)、24000、28000、32000、38500(接枝型高分子)」,日光化學(Nikko Chemicals)公司製造的「Nikol T106(聚氧乙烯去水山梨醇單油酸酯)、MYS-IEX(聚氧乙烯單硬脂酸酯)」,川研精化(Kawaken Fine Chemicals)(股份)製造的Hinoact T-8000E 等,信越化學工業(股份)製造的有機矽氧烷聚合物KP341,裕商(股份)製造的「W001:陽離子系界面活性劑」、聚氧乙烯月桂醚、聚氧乙烯硬脂基醚、聚氧乙烯油醚、聚氧乙烯辛基苯醚、聚氧乙烯壬基苯醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、去水山梨醇脂肪酸酯等非離子系界面活性劑、「W004、W005、W017」等陰離子系界面活性劑,森下產業(股份)製造的「EFKA-46、EFKA-47、EFKA-47EA、EFKA Polymer100、EFKA Polymer400、EFKA Polymer401、EFKA Polymer450」,聖諾普科(Sannopco)(股份)製造的「Disperse Aid6、Disperse Aid8、Disperse Aid15、Disperse Aid9100」等高分子分散劑,艾迪科(ADEKA)(股份)製造的「Adeka Pluronic L31、F38、L42、L44、L61、L64、F68、L72、P95、F77、P84、F87、P94、L101、P103、F108、L121、P-123」,以及三洋化成(股份)製造的「Ionet(商品名)S-20」等。 As such a specific example, "Disperbyk-101 (polyamide amine phosphate), 107 (carboxylate), 110 (acid group-containing copolymer), 130 (polyamide) manufactured by BYK Chemical Co., Ltd. ), 161, 162, 163, 164, 165, 166, 170 (polymer copolymer), "BYK-P104, P105 (high molecular weight unsaturated polycarboxylic acid)", "EFKA4047, 4050~4010" manufactured by EFKA ~4165 (polyurethane type), EFKA4330~4340 (block copolymer), 4400~4402 (modified polyacrylate), 5010 (polyester decylamine), 5765 (high molecular weight polycarboxylate) 6220 (fatty acid polyester), 6745 (anthraquinone derivative), "Ajisper PB821, PB822, PB880, PB881" manufactured by Ajinomoto Fine-Techno Co., Ltd., "Florene TG-710 (amine) manufactured by Kyoeisha Chemical Co., Ltd. "Carbide oligomer"), "Polyflow No. 50E, No. 300 (acrylic copolymer)", "Disparlon KS-860, 873SN, 874, #2150 (aliphatic polycarboxylic acid) manufactured by Nanben Chemical Co., Ltd. ), #7004 (polyether ester), DA-703-50, DA-705, DA-725", "Demol RN, N (naphthalenesulfonic acid formaldehyde polycondensate), MS, C, SN- manufactured by Kao Corporation B (aromatic sulfonate Formaldehyde polycondensate), "Homogenol L-18 (polymer polycarboxylic acid)", "Emalgen 920, 930, 935, 985 (polyoxyethylene decyl phenyl ether)", "Acetamin86 (stearylamine acetate) "Solsperse 5000 (anthraquinone derivative), 13240 (polyesteramine), 3000, 17000, 27000 (polymer with a functional part at the end), 24000, 28000, 32000, manufactured by Lubrizol, Japan. 38500 (grafted polymer)", Nikol T106 (polyoxyethylene sorbitan monooleate) and MYS-IEX (polyoxyethylene monostearate) manufactured by Nikko Chemicals Co., Ltd. Hinoact T-8000E manufactured by Kawaken Fine Chemicals Co., Ltd. Etc., KP341, an organic siloxane polymer manufactured by Shin-Etsu Chemical Co., Ltd., "W001: Cationic surfactant" manufactured by Yushang Co., Ltd., polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, poly Nonionics such as oxyethylene ether, polyoxyethylene octyl phenyl ether, polyoxyethylene decyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester An interfacial surfactant, an anionic surfactant such as "W004, W005, W017", "EFKA-46, EFKA-47, EFKA-47EA, EFKA Polymer100, EFKA Polymer400, EFKA Polymer401, EFKA Polymer450 manufactured by Morishita Industrial Co., Ltd." "Disperse Aid6, Disperse Aid8, Disperse Aid15, Disperse Aid9100" and other polymer dispersants manufactured by Sannopco (shares), "Adeka Pluronic L31, F38" manufactured by ADEKA (shares) , "L42, L44, L61, L64, F68, L72, P95, F77, P84, F87, P94, L101, P103, F108, L121, P-123", and "Ionet (trade name) manufactured by Sanyo Chemical (share)" S-20" and so on.

該些分散劑可單獨使用,亦可將2種以上組合使用。另外,本發明的分散劑亦可將上述具有針對紅外線遮蔽材表面的固定部位的末端改質型高分子、接枝型高分子、嵌段型高分子與鹼可溶性樹脂併用來使用。作為鹼可溶性樹脂,可列舉(甲基)丙烯酸共聚物、衣康酸共聚物、巴豆酸共聚物、順丁烯二酸共聚物、部分酯化順丁烯二酸共聚物等、以及側鏈上具有羧酸的酸性纖維素衍生物、於具有羥基的聚合物中加成了酸酐的樹脂,特佳為(甲基)丙烯酸共聚物。另外,日本專利特開平10-300922號公報中所記 載的N位取代順丁烯二醯亞胺單體共聚物、日本專利特開2004-300204號公報中所記載的醚二聚體共聚物、日本專利特開平7-319161號公報中所記載的含有聚合性基的鹼可溶性樹脂亦較佳。 These dispersing agents may be used singly or in combination of two or more. Further, the dispersing agent of the present invention may be used by using the terminal modified polymer having a fixed portion on the surface of the infrared shielding material, a graft polymer, a block polymer, and an alkali-soluble resin. Examples of the alkali-soluble resin include a (meth)acrylic copolymer, an itaconic acid copolymer, a crotonic acid copolymer, a maleic acid copolymer, a partially esterified maleic acid copolymer, and the like, and a side chain. An acidic cellulose derivative having a carboxylic acid, a resin to which an acid anhydride is added to a polymer having a hydroxyl group, and particularly preferably a (meth)acrylic copolymer. In addition, it is noted in Japanese Patent Laid-Open No. Hei 10-300922. The N-position-substituted maleimide-imine monomer copolymer, the ether-dimer copolymer described in JP-A-2004-300204, and the Japanese Patent Application Laid-Open No. Hei 7-319161 An alkali-soluble resin containing a polymerizable group is also preferred.

就分散性、顯影性、沈澱性的觀點而言,較佳為日本專利特開2010-106268號公報中所記載的以下所示的樹脂,尤其,就分散性的觀點而言,較佳為側鏈上具有聚酯鏈的高分子分散劑,另外,就分散性、及藉由光微影法所形成的圖案的解析性的觀點而言,較佳為具有酸基與聚酯鏈的樹脂。作為分散劑中的較佳的酸基,就吸附性的觀點而言,較佳為pKa為6以下的酸基,特佳為羧酸、磺酸、磷酸。 From the viewpoint of dispersibility, developability, and precipitability, the resin described below is preferably the one described in JP-A-2010-106268, and particularly preferably from the viewpoint of dispersibility. The polymer dispersing agent having a polyester chain in the chain is preferably a resin having an acid group and a polyester chain from the viewpoint of dispersibility and resolution of a pattern formed by photolithography. The acid group in the dispersant is preferably an acid group having a pKa of 6 or less from the viewpoint of adsorptivity, and particularly preferably a carboxylic acid, a sulfonic acid or a phosphoric acid.

以下,對可較佳地用於本發明的日本專利特開2010-106268號公報中所記載的分散樹脂進行說明。 Hereinafter, the dispersion resin described in JP-A-2010-106268, which is preferably used in the present invention, will be described.

較佳的分散劑是於分子內,除氫原子以外的原子數為40~10000的範圍,且具有選自聚酯結構、聚醚結構、及聚丙烯酸酯結構中的接枝鏈的接枝共聚物,較佳為至少含有由下述式(1)~式(4)的任一個所表示的結構單元,更佳為至少含有由下述式(1A)、下述式(2A)、下述式(3A)、下述式(3B)、及下述(4)的任一個所表示的結構單元。 A preferred dispersant is a graft copolymer of a graft chain selected from the group consisting of a polyester structure, a polyether structure, and a polyacrylate structure in a molecule having a number of atoms other than a hydrogen atom in the range of 40 to 10,000. It is preferable that at least the structural unit represented by any one of the following formulas (1) to (4) is contained, and it is more preferable to contain at least the following formula (1A), the following formula (2A), and the following A structural unit represented by any one of the formula (3A), the following formula (3B), and the following (4).

式(1)~式(4)中,W1、W2、W3及W4分別獨立地表示氧原子或NH,特佳為氧原子。 In the formulae (1) to (4), W 1 , W 2 , W 3 and W 4 each independently represent an oxygen atom or NH, and particularly preferably an oxygen atom.

式(1)~式(4)中,X1、X2、X3、X4及X5分別獨立地表示氫原子或一價的有機基。作為X1、X2、X3、X4及X5,就合成方面的限制的觀點而言,較佳為氫原子、或碳數為1~12的烷基,更佳為氫原子或甲基,特佳為甲基。 In the formulae (1) to (4), X 1 , X 2 , X 3 , X 4 and X 5 each independently represent a hydrogen atom or a monovalent organic group. X 1 , X 2 , X 3 , X 4 and X 5 are preferably a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, more preferably a hydrogen atom or a group, from the viewpoint of limitations in terms of synthesis. Base, especially good for methyl.

式(1)~式(4)中,Y1、Y2、Y3及Y4分別獨立為二價的連結基,結構方面並無特別限制。作為由Y1、Y2、Y3及Y4所表示的二價的連結基,具體而言,可列舉下述的(Y-1)~(Y-21)的連結基等。下述結構中,A、B分別表示與式(1)~式(4)中的左末端基、右末端基的鍵結。下述所示的結構之中,就合成的簡便性而言,更佳為(Y-2)、(Y-13)。 In the formulae (1) to (4), Y 1 , Y 2 , Y 3 and Y 4 are each independently a divalent linking group, and the structure is not particularly limited. Specific examples of the divalent linking group represented by Y 1 , Y 2 , Y 3 and Y 4 include the following (Y-1) to (Y-21) linking groups. In the following structures, A and B respectively represent a bond to the left terminal group and the right terminal group in the formulae (1) to (4). Among the structures shown below, (Y-2) and (Y-13) are more preferable in terms of ease of synthesis.

式(1)~式(4)中,Z1、Z2、Z3及Z4分別獨立為一價的有機基,結構並無特別限制,具體而言,可列舉烷基、羥基、烷氧基、芳氧基、或雜芳氧基、烷基硫醚基、芳基硫醚基、或者雜芳基硫醚基、胺基等。其中,作為由Z1、Z2、Z3及Z4所表示的 一價的有機基,尤其就提昇分散性的觀點而言,較佳為具有立體排斥效果,作為由Z1~Z3所表示的有機基,較佳為分別獨立且碳數為5~24的烷基或碳數為5~24的烷氧基,其中,特佳為分別獨立且具有碳數為5~24的分支烷基的烷氧基、或具有碳數為5~24的環狀烷基的烷氧基。另外,作為由Z4所表示的有機基,較佳為分別獨立且碳數為5~24的烷基,其中,較佳為分別獨立且碳數為5~24的分支烷基或者碳數為5~24的環狀烷基。 In the formulae (1) to (4), Z 1 , Z 2 , Z 3 and Z 4 are each independently a monovalent organic group, and the structure is not particularly limited, and specific examples thereof include an alkyl group, a hydroxyl group, and an alkoxy group. a aryl group, an aryloxy group, or a heteroaryloxy group, an alkyl sulfide group, an aryl sulfide group, or a heteroaryl sulfide group, an amine group, or the like. Among them, as the monovalent organic group represented by Z 1 , Z 2 , Z 3 and Z 4 , in particular, from the viewpoint of improving dispersibility, it is preferred to have a steric repulsion effect as Z 1 to Z 3 The organic group to be represented is preferably an alkyl group having 5 to 24 carbon atoms or an alkoxy group having 5 to 24 carbon atoms, and particularly preferably a branched alkane having 5 to 24 carbon atoms. An alkoxy group or alkoxy group having a cyclic alkyl group having 5 to 24 carbon atoms. Further, as the organic group represented by Z 4 , an alkyl group each independently having a carbon number of 5 to 24 is preferable, and among them, a branched alkyl group having a carbon number of 5 to 24 or a carbon number is preferably used. a cyclic alkyl group of 5 to 24.

式(1)~式(4)中,n、m、p、及q分別為1~500的整數。 In the formulas (1) to (4), n, m, p, and q are each an integer of 1 to 500.

另外,式(1)及式(2)中,j及k分別獨立地表示2~8的整數。就分散穩定性、顯影性的觀點而言,式(1)及式(2)中的j及k較佳為4~6的整數,最佳為5。 Further, in the formulas (1) and (2), j and k each independently represent an integer of 2 to 8. From the viewpoints of dispersion stability and developability, j and k in the formulae (1) and (2) are preferably an integer of 4 to 6, and most preferably 5.

式(3)中的R3表示分支或直鏈的伸烷基。式(3)中的R3較佳為碳數為1~10的伸烷基,更佳為碳數為2或3的伸烷基。 R 3 in the formula (3) represents a branched or linear alkylene group. R 3 in the formula (3) is preferably an alkylene group having a carbon number of 1 to 10, more preferably an alkylene group having a carbon number of 2 or 3.

式(4)中的R4表示氫原子或一價的有機基,作為該一價的有機基,結構方面並無特別限定。作為式(4)中的R4,較佳為可列舉氫原子、烷基、芳基、及雜芳基,更佳為氫原子、或烷基。當式(4)中的R4為烷基時,作為該烷基,較佳為碳數為1~20的直鏈狀烷基、碳數為3~20的分支狀烷基、或碳數為5~20的環狀烷基,更佳為碳數為1~20的直鏈狀烷基,特佳為碳數為1~6的直鏈狀烷基。另外,作為式(4)中的R4,亦可於接枝 共聚物中混合使用2種以上的結構不同的R4R 4 in the formula (4) represents a hydrogen atom or a monovalent organic group, and the monovalent organic group is not particularly limited in structure. R 4 in the formula (4) is preferably a hydrogen atom, an alkyl group, an aryl group or a heteroaryl group, more preferably a hydrogen atom or an alkyl group. When R 4 in the formula (4) is an alkyl group, the alkyl group is preferably a linear alkyl group having 1 to 20 carbon atoms, a branched alkyl group having 3 to 20 carbon atoms, or a carbon number. The cyclic alkyl group having 5 to 20 is more preferably a linear alkyl group having 1 to 20 carbon atoms, and particularly preferably a linear alkyl group having 1 to 6 carbon atoms. Further, as R 4 in the formula (4), two or more kinds of R 4 having different structures may be used in combination in the graft copolymer.

於接枝共聚物中,以質量換算計,相對於接枝共聚物的總質量,較佳為於10%~90%的範圍內含有由式(1)~式(4)所表示的結構單元,更佳為於30%~70%的範圍內含有由式(1)~式(4)所表示的結構單元。若於該範圍內含有由式(1)~式(4)所表示的結構單元,則顏料的分散性高、形成遮光膜時的顯影性良好。 In the graft copolymer, the structural unit represented by the formula (1) to the formula (4) is preferably contained in a range of 10% to 90% in terms of mass, based on the total mass of the graft copolymer. More preferably, the structural unit represented by the formula (1) to the formula (4) is contained in the range of 30% to 70%. When the structural unit represented by the formula (1) to the formula (4) is contained in the range, the dispersibility of the pigment is high, and the developability when the light-shielding film is formed is good.

另外,於接枝共聚物中,可含有2種以上結構不同的接枝共聚物。 Further, the graft copolymer may contain two or more kinds of graft copolymers having different structures.

作為由上述式(1)所表示的結構單元,就分散穩定性、顯影性的觀點而言,更佳為由下述式(1A)所表示的結構單元。 The structural unit represented by the above formula (1) is more preferably a structural unit represented by the following formula (1A) from the viewpoint of dispersion stability and developability.

另外,作為由上述式(2)所表示的結構單元,就分散穩定性、顯影性的觀點而言,更佳為由下述式(2A)所表示的結構單元。 In addition, the structural unit represented by the above formula (2) is more preferably a structural unit represented by the following formula (2A) from the viewpoint of dispersion stability and developability.

式(1A)中,X1、Y1、Z1及n的含義與式(1)中的X1、Y1、Z1及n相同,較佳的範圍亦相同。 In the formula (1A), 1, Y 1 , Z 1 , and the same n X 1, Y 1, Z 1 and n have the meanings of formula X (1) is, preferred ranges are also the same.

式(2A)中,X2、Y2、Z2及m的含義與式(2)中的 X2、Y2、Z2及m相同,較佳的範圍亦相同。 In formula (2A), X 2, Y 2, Z 2 and m are as defined for the formula X (2) is 2, Y 2, Z 2 and the same as m, the preferred ranges are also the same.

另外,作為由上述式(3)所表示的結構單元,就分散穩定性、顯影性的觀點而言,更佳為由下述式(3A)或下述式(3B)所表示的結構單元。 In addition, the structural unit represented by the above formula (3) is more preferably a structural unit represented by the following formula (3A) or the following formula (3B) from the viewpoint of dispersion stability and developability.

式(3A)或式(3B)中,X3、Y3、Z3及p的含義與上述式(3)中的X3、Y3、Z3及p相同,較佳的範圍亦相同。 Formula (3A) or the formula (3B) in, X 3, Y 3, Z 3 and p are the meanings (3) the formula in which X 3, Y 3, Z 3 and the same p, preferred ranges are also the same.

作為接枝共聚物,更佳為具有由上述式(1A)所表示的結構單元者。 The graft copolymer is more preferably a structural unit represented by the above formula (1A).

作為具體例,可列舉以下所示的化合物。再者,下述例示化合物中,一併記載於各結構單元中的數值(一併記載於主鏈重複單元中的數值)表示該結構單元的含量[質量%:記載為(wt%)]。一併記載於側鏈的重複部位中的數值表示該重複部位的重複數。 Specific examples thereof include the compounds shown below. In addition, among the following exemplified compounds, the numerical value (the numerical value collectively described in the main chain repeating unit) which is described in each structural unit is the content of the structural unit [% by mass: described as (wt%)]. The numerical value described in the repeated portion of the side chain together indicates the number of repetitions of the repeated portion.

作為本發明中的分散劑,較佳為如例示化合物72般具有聚酯鏈的化合物。 As the dispersing agent in the present invention, a compound having a polyester chain as exemplified as the compound 72 is preferred.

作為製備本發明中的顏料分散物時的分散劑的含量,相對於顏料分散物中的著色劑(包含黑色顏料及其他著色劑)的總固體成分質量,較佳為1質量%~90質量%,更佳為3質量%~70質量%。 The content of the dispersing agent in the preparation of the pigment dispersion in the present invention is preferably from 1% by mass to 90% by mass based on the total solid content of the coloring agent (including the black pigment and other coloring agents) in the pigment dispersion. More preferably, it is 3 mass% to 70 mass%.

當使用分散劑時,就提昇分散性的觀點而言,較佳為首先藉由鎢化合物(以及視需要的上述其他紅外線遮蔽材)與分散劑、及適當的溶劑來製備分散組成物,然後調配至本發明的組成物中。 When a dispersing agent is used, from the viewpoint of improving dispersibility, it is preferred to first prepare a dispersion composition by a tungsten compound (and optionally other infrared shielding materials as described above), a dispersing agent, and a suitable solvent, and then to prepare a dispersion composition. To the composition of the present invention.

本發明的組成物可含有分散劑,亦可不含分散劑,當含有分散劑時,作為分散組成物中的分散劑的含量,相對於分散組成物中的紅外線遮蔽粒子的總固體成分質量的和,較佳為1質量%~90質量%,更佳為3質量%~70質量%。 The composition of the present invention may contain a dispersant or may not contain a dispersant. When the dispersant is contained, the content of the dispersant in the dispersion composition is the sum of the total solid content of the infrared shielding particles in the dispersion composition. It is preferably from 1% by mass to 90% by mass, more preferably from 3% by mass to 70% by mass.

相對於總固體成分,本發明的阻焊劑組成物含有分散劑組成物時的該分散劑組成物的調配量較佳為1質量%~30質量%,更佳為2質量%~10質量%。 The amount of the dispersant composition in the case where the solder resist composition of the present invention contains the dispersant composition is preferably from 1% by mass to 30% by mass, and more preferably from 2% by mass to 10% by mass, based on the total solid content.

<有機羧酸、有機羧酸酐> <Organic carboxylic acid, organic carboxylic anhydride>

本發明的組成物亦可含有分子量為1000以下的有機羧酸、及/或有機羧酸酐。 The composition of the present invention may also contain an organic carboxylic acid having a molecular weight of 1,000 or less and/or an organic carboxylic anhydride.

作為有機羧酸化合物,具體而言,可列舉脂肪族羧酸或芳香族羧酸。作為脂肪族羧酸,例如可列舉:甲酸、乙酸、丙酸、丁酸、戊酸、三甲基乙酸、己酸、乙醇酸、丙烯酸、甲基丙烯酸等一元羧酸,草酸、丙二酸、丁二酸、戊二酸、己二酸、庚二酸、環己烷二羧酸、環己烯二羧酸、衣康酸、檸康酸、順丁烯二酸、反丁烯二酸等二羧酸,1,2,3-丙三甲酸、鳥頭酸等三羧酸等。另外,作為芳香族羧酸,例如可列舉:苯甲酸、鄰苯二甲酸等羧基直接鍵結於苯基而成的羧酸,以及自苯基經由碳鍵而鍵結有羧基的羧酸類。該些之中,特佳為分子量為600以下,尤其分子量為50~500者,具體而言,例如較佳為順丁烯二酸、丙二酸、丁二酸、衣康酸。 Specific examples of the organic carboxylic acid compound include an aliphatic carboxylic acid or an aromatic carboxylic acid. Examples of the aliphatic carboxylic acid include monocarboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, trimethylacetic acid, caproic acid, glycolic acid, acrylic acid, and methacrylic acid, oxalic acid, malonic acid, and the like. Succinic acid, glutaric acid, adipic acid, pimelic acid, cyclohexanedicarboxylic acid, cyclohexene dicarboxylic acid, itaconic acid, citraconic acid, maleic acid, fumaric acid, etc. a dicarboxylic acid such as dicarboxylic acid, 1,2,3-propanetricarboxylic acid or cephalosporic acid. In addition, examples of the aromatic carboxylic acid include a carboxylic acid in which a carboxyl group such as benzoic acid or phthalic acid is directly bonded to a phenyl group, and a carboxylic acid in which a carboxyl group is bonded to a phenyl group via a carbon bond. Among these, a molecular weight of 600 or less, particularly a molecular weight of 50 to 500 is particularly preferable. Specifically, for example, maleic acid, malonic acid, succinic acid, and itaconic acid are preferable.

作為有機羧酸酐,例如可列舉脂肪族羧酸酐、芳香族羧酸酐,具體而言,例如可列舉:乙酸酐、三氯乙酸酐、三氟乙酸酐、四氫鄰苯二甲酸酐、丁二酸酐、順丁烯二酸酐、檸康酸酐、衣康酸酐、戊二酸酐、1,2-環己烯二羧酸酐、正十八基丁二酸酐、5-降冰片烯-2,3-二羧酸酐等脂肪族羧酸酐。作為芳香族羧酸酐,例如可列舉:鄰苯二甲酸酐、偏苯三甲酸酐、均苯四甲酸酐、萘二甲酸酐等。該些之中,特佳為分子量為600以下,尤其分子量為50~500者,具體而言,例如較佳為順丁烯二酸酐、丁二酸酐、檸 康酸酐、衣康酸酐。 Examples of the organic carboxylic acid anhydride include an aliphatic carboxylic acid anhydride and an aromatic carboxylic acid anhydride. Specific examples thereof include acetic anhydride, trichloroacetic anhydride, trifluoroacetic anhydride, tetrahydrophthalic anhydride, and succinic anhydride. , maleic anhydride, citraconic anhydride, itaconic anhydride, glutaric anhydride, 1,2-cyclohexene dicarboxylic anhydride, n-octadecyl succinic anhydride, 5-norbornene-2,3-dicarboxylate An aliphatic carboxylic acid anhydride such as an acid anhydride. Examples of the aromatic carboxylic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, and naphthalic anhydride. Among these, a molecular weight of 600 or less, especially a molecular weight of 50 to 500 is particularly preferable, and specifically, for example, maleic anhydride, succinic anhydride, and lemon are preferable. Kang anhydride, itaconic anhydride.

當含有該些有機羧酸及/或有機羧酸酐時,於總固體成分中,其添加量通常為0.01質量%~10質量%,較佳為0.03質量%~5質量%,更佳為0.05質量%~3質量%的範圍。 When the organic carboxylic acid and/or the organic carboxylic acid anhydride is contained, the amount of the total solid content is usually 0.01% by mass to 10% by mass, preferably 0.03% by mass to 5% by mass, more preferably 0.05% by mass. %~3 mass% range.

藉由添加該些分子量為1000以下的有機羧酸、及/或有機羧酸酐,可一面保持高圖案密接性,一面進一步減少組成物的未溶解物的殘存。 By adding these organic carboxylic acids having a molecular weight of 1,000 or less and/or an organic carboxylic anhydride, it is possible to further reduce the residual of the undissolved matter of the composition while maintaining high pattern adhesion.

關於上述交聯劑,例如於日本專利特開2012-003225號公報的段落號[0166]~段落號[0182]中有詳細記載,其內容被編入至本申請案說明書中。 The above-mentioned crosslinking agent is described in detail in paragraphs [0166] to [0182] of JP-A-2012-003225, the contents of which are incorporated herein by reference.

關於上述硬化促進劑,例如於日本專利特開2012-003225號公報的段落號[0241]中有詳細記載,其內容被編入至本申請案說明書中。 The above-mentioned hardening accelerator is described in detail in the paragraph [0241] of JP-A-2012-003225, the content of which is incorporated herein by reference.

關於上述彈性體,例如於日本專利特開2012-003225號公報的段落號[0242]~段落號[0254]中有詳細記載,其內容被編入至本申請案說明書中。 The above-mentioned elastomer is described in detail in paragraph [0242] to paragraph [0254] of Japanese Patent Laid-Open Publication No. 2012-003225, the contents of which are incorporated herein by reference.

關於上述熱聚合抑制劑,例如於日本專利特開2008-250074號公報的段落號[0101]~段落號[0102]中有詳細記載,其內容被編入至本申請案說明書中。 The above-mentioned thermal polymerization inhibitor is described in detail in paragraphs [0101] to [0102] of JP-A-2008-250074, the contents of which are incorporated herein by reference.

關於上述塑化劑,例如於日本專利特開2008-250074號公報的段落號[0103]~段落號[0104]中有詳細記載,其內容被編入至本申請案說明書中。 The plasticizer is described in detail in paragraphs [0103] to [0104] of JP-A-2008-250074, the contents of which are incorporated herein by reference.

關於上述著色劑,例如於日本專利特開2008-250074號公報的段落號[0105]~段落號[0106]或日本專利特開2009-205029號公報的段落號[0038]、段落號[0039]中有詳細記載,其內容被編入至本申請案說明書中。 Regarding the coloring agent described above, for example, paragraph number [0105] to paragraph number [0106] of Japanese Patent Laid-Open Publication No. 2008-250074 or paragraph number [0038] of paragraph No. [0039] of JP-A-2009-205029 It is described in detail and its contents are incorporated into the specification of the present application.

關於上述密接促進劑,例如於日本專利特開2008-250074號公報的段落號[0107]~段落號[0109]中有詳細記載,其內容被編入至本申請案說明書中。 The above-mentioned adhesion promoter is described in detail in paragraphs [0107] to [0109] of JP-A-2008-250074, the contents of which are incorporated herein by reference.

該些公報中所記載的添加劑均可用於本發明的組成物。 The additives described in these publications can be used in the composition of the present invention.

為了去除異物或減少缺陷等,較佳為利用過濾器對本實施形態的硬化性組成物進行過濾。只要是自先前以來用於過濾用途等的過濾器,則可無特別限定地使用。例如可列舉利用聚四氟乙烯(Polytetrafluoroethylene,PTFE)等氟樹脂,尼龍-6、尼龍-6,6等聚醯胺系樹脂,聚乙烯、聚丙烯(Polypropylene,PP)等聚烯烴樹脂(高密度、含有超高分子量)等的過濾器。該些素材之中,較佳為聚丙烯(包含高密度聚丙烯)。 In order to remove foreign matter, reduce defects, and the like, it is preferred to filter the curable composition of the present embodiment by a filter. It is not particularly limited as long as it is a filter used for filtration purposes or the like from the past. For example, a fluororesin such as polytetrafluoroethylene (PTFE), a polyamide resin such as nylon-6 or nylon-6, 6 or a polyolefin resin such as polyethylene or polypropylene (high density) may be used. A filter containing ultra-high molecular weight or the like. Among these materials, polypropylene (including high density polypropylene) is preferred.

過濾器的孔徑合適的是0.01μm~7.0μm左右,較佳為0.01μm~2.5μm左右,更佳為0.01μm~1.5μm左右。藉由設為該範圍,可確實地去除混入至已溶解的組成物中,並於後續步驟中阻礙均勻及平滑的組成物的製備的微細的異物。 The pore diameter of the filter is suitably from about 0.01 μm to about 7.0 μm, preferably from about 0.01 μm to about 2.5 μm, more preferably from about 0.01 μm to about 1.5 μm. By setting it as this range, the fine foreign material which mix|blended into the to-dissolved composition, and the formation of the uniform and smooth composition in the subsequent process can be reliably removed.

當使用過濾器時,亦可將不同的過濾器加以組合。此時,利用第1種過濾器的過濾可僅進行1次,亦可進行2次以上。當將不同的過濾器加以組合來進行2次以上的過濾時,較佳為第2 次的過濾以後的孔徑大於第1次的過濾的孔徑。另外,亦可於上述範圍內將孔徑不同的第1種過濾器加以組合。此處的孔徑可參照過濾器生產商的標稱值。作為市售的過濾器,例如可自日本頗爾(Pall)股份有限公司、愛多邦得科東洋(Advantec Toyo)股份有限公司、日本英特格(Nihon Entegris)股份有限公司(原日本密科理(Mykrolis)股份有限公司)、或北澤微濾器(Kitz Microfilter)股份有限公司等所提供的各種過濾器中進行選擇。 Different filters can also be combined when using filters. At this time, the filtration by the first type of filter may be performed only once or twice or more. When two or more filters are combined for different filters, it is preferably second. The pore size after the secondary filtration is larger than the pore diameter of the first filtration. Further, the first type of filters having different pore diameters may be combined in the above range. The aperture here can be referred to the nominal value of the filter manufacturer. As a commercially available filter, for example, from Japan Pall Co., Ltd., Advantec Toyo Co., Ltd., Japan Nihon Entegris Co., Ltd. (formerly Japan Mico) Choose from various filters provided by Mykrolis Co., Ltd. or Kitz Microfilter Co., Ltd.

第2種過濾器可使用以與上述第1種過濾器相同的材料等所形成的過濾器。第2過濾器的孔徑合適的是0.5μm~7.0μm左右,較佳為2.5μm~7.0μm左右,更佳為4.5μm~6.0μm左右。藉由設為該範圍,可於使混合液中所含有的成分粒子殘存的狀態下,去除混入至混合液中,並於後續步驟中阻礙均勻及平滑的組成物的製備的異物。 As the second filter, a filter formed of the same material as that of the above-described first filter can be used. The pore diameter of the second filter is suitably from about 0.5 μm to about 7.0 μm, preferably from about 2.5 μm to about 7.0 μm, more preferably from about 4.5 μm to about 6.0 μm. By setting it as the range, it is possible to remove the foreign matter which is mixed into the mixed liquid in a state in which the component particles contained in the mixed liquid remain, and which hinders the preparation of the uniform and smooth composition in the subsequent step.

例如,利用第1種過濾器的過濾亦可僅於分散液中進行,在混合其他成分後,進行第2次過濾。 For example, the filtration by the first type of filter may be carried out only in the dispersion, and after the other components are mixed, the second filtration is performed.

本發明的組成物的用途並無特別限定,可列舉阻焊劑用組成物,針對固體攝像元件中的矽基板的背面的遮光膜用組成物,針對晶圓級透鏡的遮光膜用組成物等,較佳為阻焊劑用組成物。 The use of the composition of the present invention is not particularly limited, and examples thereof include a composition for a solder resist, a composition for a light-shielding film on the back surface of a tantalum substrate in a solid-state image sensor, and a composition for a light-shielding film of a wafer-level lens. A composition for a solder resist is preferred.

當本發明的組成物為阻焊劑用組成物時,為了形成厚度比較大的塗膜,固體成分濃度較佳為30質量%以上、80質量%以下,更佳為35質量%以上、70質量%以下,最佳為40質量%以上、 60質量%以下。 When the composition of the present invention is a composition for a solder resist, the solid content concentration is preferably 30% by mass or more and 80% by mass or less, more preferably 35% by mass or more and 70% by mass, in order to form a coating film having a relatively large thickness. Hereinafter, the optimum is 40% by mass or more. 60% by mass or less.

另外,本發明的組成物的黏度較佳為處於1mPa.s以上、3000mPa.s以下的範圍內,更佳為10mPa.s以上、2000mPa.s以下的範圍,最佳為100mPa.s以上、1500mPa.s以下的範圍。 In addition, the viscosity of the composition of the present invention is preferably at 1 mPa. Above s, 3000mPa. Within the range of s below, more preferably 10mPa. Above s, 2000mPa. The range below s, the best is 100mPa. Above s, 1500mPa. s the following range.

當本發明的組成物為阻焊劑用組成物時,就厚膜形成性與均勻塗佈性的觀點而言,較佳為處於10mPa.s以上、3000mPa.s以下的範圍內,更佳為500mPa.s以上、1500mPa.s以下的範圍,最佳為700mPa.s以上、1400mPa.s以下的範圍。 When the composition of the present invention is a composition for a solder resist, it is preferably at 10 mPa from the viewpoint of thick film formability and uniform coating properties. Above s, 3000mPa. Within the range of s below, more preferably 500mPa. Above s, 1500mPa. The range below s, the best is 700mPa. Above s, 1400mPa. s the following range.

本發明亦有關於一種由上述本發明的組成物所形成的硬化膜(較佳為感光層)。此種感光性層因由本發明的組成物形成,故為可形成紅外區域中的遮光性高,可見光區域中的透光性高,且具有所期望的形狀、並且耐久性(對於高溫、高濕的耐久性或對於基板的密接性等)優異的圖案的感光層。 The present invention also relates to a cured film (preferably a photosensitive layer) formed from the above composition of the present invention. Since the photosensitive layer is formed of the composition of the present invention, it has high light-shielding property in the infrared region, high light transmittance in the visible light region, and has a desired shape and durability (for high temperature and high humidity) A photosensitive layer having an excellent pattern of durability or adhesion to a substrate.

另外,本發明亦有關於一種由上述本發明的組成物所形成的永久圖案。本發明的永久圖案是藉由對由本發明的組成物所形成的感光層進行曝光及鹼顯影而獲得者,因使用本發明的組成物,故為紅外區域中的遮光性高,可見光區域中的透光性高,且具有所期望的形狀、並且耐久性(對於高溫、高濕的耐久性或對於基板的密接性等)優異的圖案。 Further, the present invention relates to a permanent pattern formed by the above composition of the present invention. The permanent pattern of the present invention is obtained by exposing and alkali-developing the photosensitive layer formed of the composition of the present invention, and since the composition of the present invention is used, the light-shielding property in the infrared region is high, and in the visible light region It has a high light transmittance, and has a desired shape and durability (a durability against high temperature, high humidity, adhesion to a substrate, etc.).

進而,本發明包括:將本發明的阻焊劑組成物應用於基板上的步驟;以及對該阻焊劑組成物進行圖案曝光的步驟。更具體而言,本發明亦有關於一種圖案形成方法,其依次包括:使用 本發明的組成物形成感光層的步驟;對該感光層進行圖案曝光來使曝光部硬化的步驟;以及利用鹼顯影去除未曝光部來形成永久圖案的步驟。 Further, the present invention includes a step of applying the solder resist composition of the present invention to a substrate; and a step of patternwise exposing the solder resist composition. More specifically, the present invention also relates to a pattern forming method, which in turn includes: using The step of forming a photosensitive layer by the composition of the present invention; the step of patternwise exposing the photosensitive layer to harden the exposed portion; and the step of removing the unexposed portion by alkali development to form a permanent pattern.

以下,以使用本發明的組成物的圖案狀的阻焊劑為例,對形成永久圖案的方法進行詳述。但是,以下的關於塗佈液製備用的溶劑的種類或使用量、塗佈液的塗佈方法、感光層的厚度、曝光步驟或其他步驟等的說明並非限於阻焊劑用途的內容。再者,此處列舉使用組成物來形成感光層(組成物層)的情況為例。 Hereinafter, a method of forming a permanent pattern will be described in detail by taking a pattern-shaped solder resist using the composition of the present invention as an example. However, the following description of the type or amount of the solvent for preparing the coating liquid, the coating method of the coating liquid, the thickness of the photosensitive layer, the exposure step, or other steps are not limited to the use of the solder resist. Further, a case where a composition is used to form a photosensitive layer (composition layer) is exemplified here.

-感光層- -Photosensitive layer -

當要形成圖案狀的阻焊劑(阻焊劑圖案)時,首先藉由上述本發明的組成物來形成感光層。感光層只要是含有上述組成物所形成的層,則並無特別限制,關於膜厚、積層構造等,可根據目的而適宜選擇。 When a pattern-like solder resist (solder resist pattern) is to be formed, the photosensitive layer is first formed by the above-described composition of the present invention. The photosensitive layer is not particularly limited as long as it is a layer containing the above composition, and the film thickness, the laminated structure, and the like can be appropriately selected depending on the purpose.

作為上述感光層的形成方法,可列舉如下的方法:製備使本發明的上述組成物於水或溶劑中溶解、乳化或分散而成的塗佈液,然後將該塗佈液直接塗佈於基板上,並進行乾燥,藉此形成感光層。 As a method of forming the photosensitive layer, a coating liquid obtained by dissolving, emulsifying or dispersing the above-described composition of the present invention in water or a solvent is prepared, and then the coating liquid is directly applied to a substrate. It is dried and dried to form a photosensitive layer.

塗佈液製備用的溶劑並無特別限制,只要是可使上述本發明的組成物的各成分均勻地溶解或分散的溶劑,則可根據目的而適宜選擇,例如可列舉:甲醇、乙醇、正丙醇、異丙醇、正丁醇、第二丁醇、正己醇等醇類;丙酮、甲基乙基酮、甲基異丁基酮、環己酮、二異丁基酮、環己酮、環戊酮等酮類;乙酸乙酯、 乙酸丁酯、乙酸正戊酯、硫酸甲酯、丙酸乙酯、鄰苯二甲酸二甲酯、苯甲酸乙酯、丙二醇單甲醚乙酸酯、及乙酸甲氧基丙酯等酯類;甲苯、二甲苯、苯、乙基苯等芳香族烴類;四氯化碳、三氯乙烯、氯仿、1,1,1-三氯乙烷、二氯甲烷、單氯苯等鹵化烴類;四氫呋喃、二乙醚、乙二醇單甲醚、乙二醇單乙醚、1-甲氧基-2-丙醇、丙二醇單甲醚等醚類;二甲基甲醯胺、二甲基乙醯胺、二甲基亞碸、環丁碸等。該些溶劑可單獨使用1種,亦可併用2種以上。另外,亦可添加公知的界面活性劑。 The solvent for preparing the coating liquid is not particularly limited, and may be any solvent which can uniformly dissolve or disperse the components of the composition of the present invention, and may be appropriately selected according to the purpose, and examples thereof include methanol, ethanol, and Alcohols such as propanol, isopropanol, n-butanol, second butanol, n-hexanol; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone, cyclohexanone , ketones such as cyclopentanone; ethyl acetate, Esters such as butyl acetate, n-amyl acetate, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate, propylene glycol monomethyl ether acetate, and methoxypropyl acetate; An aromatic hydrocarbon such as toluene, xylene, benzene or ethylbenzene; a halogenated hydrocarbon such as carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroethane, dichloromethane or monochlorobenzene; Ethers such as tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 1-methoxy-2-propanol, propylene glycol monomethyl ether; dimethylformamide, dimethylacetamide , dimethyl hydrazine, cyclobutyl hydrazine, and the like. These solvents may be used alone or in combination of two or more. Further, a known surfactant can also be added.

將塗佈液塗佈於基板上的方法並無特別限制,可根據目的而適宜選擇,例如可列舉使用旋轉塗佈機、狹縫旋轉式塗佈機、輥塗機、模塗佈機、簾幕式塗佈機等進行塗佈的方法。 The method of applying the coating liquid onto the substrate is not particularly limited, and may be appropriately selected according to the purpose, and examples thereof include a spin coater, a slit rotary coater, a roll coater, a die coater, and a curtain. A method of coating a curtain coater or the like.

另外,作為塗膜的乾燥條件,亦根據各成分、溶劑的種類,使用比例等而不同,但通常為於60℃~150℃的溫度下乾燥30秒~15分鐘左右。 In addition, the drying conditions of the coating film differ depending on the type of each component, the solvent, the use ratio, etc., but it is usually dried at a temperature of 60 ° C to 150 ° C for about 30 seconds to 15 minutes.

作為上述感光層的厚度,並無特別限制,可根據目的而適宜選擇,例如較佳為1μm~100μm,更佳為2μm~50μm,特佳為4μm~30μm。 The thickness of the photosensitive layer is not particularly limited and may be appropriately selected depending on the intended purpose, and is, for example, preferably 1 μm to 100 μm, more preferably 2 μm to 50 μm, and particularly preferably 4 μm to 30 μm.

(阻焊劑圖案形成方法) (Solder resist pattern forming method)

使用本發明的阻焊劑組成物來形成圖案硬化膜的方法至少包括進行圖案曝光的步驟,進而,通常視需要包括選擇適宜條件的顯影步驟、及其他步驟。再者,於本發明中,「曝光」是以不僅包含各種波長的光,亦包含電子束、X射線等的放射線照射 的含義來使用。 The method of forming the pattern-cured film using the solder resist composition of the present invention includes at least a step of performing pattern exposure, and further, a development step including selection of suitable conditions, and other steps, as usual. Further, in the present invention, "exposure" is radiation irradiation including not only light of various wavelengths but also electron beams, X-rays, and the like. The meaning to use.

<曝光步驟> <Exposure step>

曝光步驟是隔著遮罩對由上述組成物層所形成的感光性層進行曝光的步驟,藉由本步驟,僅受到光照射的區域硬化。 The exposure step is a step of exposing the photosensitive layer formed of the above-described composition layer through a mask, and in this step, only the region irradiated with light is hardened.

曝光較佳為藉由放射線的照射來進行,作為可於曝光時使用的放射線,尤其可較佳地使用電子束、KrF、ArF、g射線、h射線、i射線等紫外線或可見光。較佳為KrF、g射線、h射線、i射線。 The exposure is preferably performed by irradiation of radiation, and as the radiation which can be used for exposure, ultraviolet rays or visible light such as an electron beam, KrF, ArF, g-ray, h-ray, or i-ray can be preferably used. Preferred are KrF, g-ray, h-ray, and i-ray.

作為曝光方式,可列舉步進式曝光、或利用高壓水銀燈的曝光等。 Examples of the exposure method include stepwise exposure or exposure using a high pressure mercury lamp.

曝光量較佳為5mJ/cm2~3000mJ/cm2,更佳為10mJ/cm2~2000mJ/cm2,最佳為50mJ/cm2~1000mJ/cm2The exposure amount is preferably 5 mJ/cm 2 to 3000 mJ/cm 2 , more preferably 10 mJ/cm 2 to 2000 mJ/cm 2 , and most preferably 50 mJ/cm 2 to 1000 mJ/cm 2 .

<其他步驟> <other steps>

作為上述其他步驟,並無特別限制,可根據目的而適宜選擇,例如可列舉:基板的表面處理步驟、顯影步驟、硬化處理步驟、後曝光步驟等。 The other steps are not particularly limited and may be appropriately selected depending on the purpose, and examples thereof include a surface treatment step of a substrate, a development step, a hardening treatment step, and a post-exposure step.

<顯影步驟> <Development step>

於曝光步驟之後,進行鹼顯影處理(顯影步驟),而使曝光步驟中的光未照射部分溶出至鹼性水溶液中。藉此,形成僅經光硬化的部分殘留且具有遮光性的圖案狀的阻焊劑。 After the exposure step, an alkali development treatment (development step) is performed, and the unexposed portion of the light in the exposure step is eluted into the alkaline aqueous solution. Thereby, a pattern-form solder resist which remains only by photohardening and has a light-shielding property is formed.

作為顯影液,理想的是對基底的電路等不造成損害的有機鹼性顯影液。作為顯影溫度,通常為20℃~40℃,顯影時間為 10秒~180秒。 As the developer, an organic alkaline developer which does not cause damage to the circuit of the substrate or the like is preferable. As the development temperature, it is usually 20 ° C ~ 40 ° C, and the development time is 10 seconds to 180 seconds.

作為用於顯影液的鹼,例如使用如下的鹼性水溶液,即以濃度通常變成0.001質量%~10質量%,較佳為0.01質量%~1質量%的方式,利用純水對氨水、乙胺、二乙胺、二甲基乙醇胺、氫氧化四甲基銨、氫氧化四乙基銨、膽鹼、吡咯、哌啶、1,8-二氮雜雙環-[5,4,0]-7-十一烯等有機鹼性化合物進行稀釋而成的鹼性水溶液。再者,當使用了包含此種鹼性水溶液的顯影液時,通常於顯影後利用純水進行清洗(淋洗)。 As the base to be used for the developer, for example, an alkaline aqueous solution is used, that is, a concentration of usually 0.001% by mass to 10% by mass, preferably 0.01% by mass to 1% by mass, using pure water to ammonia water or ethylamine. , diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, pyrrole, piperidine, 1,8-diazabicyclo-[5,4,0]-7 An alkaline aqueous solution obtained by diluting an organic basic compound such as undecene. Further, when a developer containing such an aqueous alkaline solution is used, it is usually washed (rinsed) with pure water after development.

<硬化處理步驟> <hardening treatment step>

上述硬化處理步驟是視需要於進行上述顯影步驟後,對所形成的圖案中的感光層進行硬化處理的步驟,藉由進行該處理,永久圖案的機械強度提昇。 The hardening treatment step is a step of hardening the photosensitive layer in the formed pattern after performing the above-described development step, and by performing the treatment, the mechanical strength of the permanent pattern is improved.

作為上述硬化處理步驟,並無特別限制,可根據目的而適宜選擇,例如可適宜地列舉全面曝光處理、全面加熱處理等。 The hardening treatment step is not particularly limited, and may be appropriately selected depending on the purpose. For example, a total exposure treatment, a total heat treatment, or the like can be suitably mentioned.

作為全面曝光處理的方法,例如可列舉於顯影步驟後,對具有所形成的圖案狀的感光層的積層體上的整個面進行曝光的方法。藉由全面曝光,形成感光層的組成物中的聚合成分的硬化得到促進,上述永久圖案的硬化進一步進行,機械強度、耐久性得到改良。 As a method of the full exposure treatment, for example, a method of exposing the entire surface of the laminate having the patterned photosensitive layer after the development step may be mentioned. By the overall exposure, the hardening of the polymer component in the composition forming the photosensitive layer is promoted, and the hardening of the permanent pattern is further progressed, and the mechanical strength and durability are improved.

作為進行上述全面曝光的裝置,並無特別限制,可根據目的而適宜選擇,例如可適宜地列舉超高壓水銀燈等紫外線(Ultraviolet,UV)曝光機。 The apparatus for performing the above-described overall exposure is not particularly limited, and may be appropriately selected depending on the purpose. For example, an ultraviolet (UV) exposure machine such as an ultrahigh pressure mercury lamp can be suitably used.

另外,作為全面加熱處理的方法,例如可列舉於顯影步驟後,對具有所形成的圖案狀的感光層的積層體上的整個面進行加熱的方法。藉由全面加熱,可提高圖案的膜強度。 Further, as a method of the overall heat treatment, for example, a method of heating the entire surface of the laminate having the patterned photosensitive layer after the development step may be mentioned. The film strength of the pattern can be increased by full heating.

全面加熱時的加熱溫度較佳為120℃~250℃。若該加熱溫度為120℃以上,則藉由加熱處理而使膜強度提昇,若該加熱溫度為250℃以下,則可防止產生上述組成物中的樹脂的分解、且膜質變弱且變脆的情況。 The heating temperature at the time of full heating is preferably from 120 ° C to 250 ° C. When the heating temperature is 120° C. or higher, the film strength is increased by heat treatment, and when the heating temperature is 250° C. or lower, decomposition of the resin in the above composition is prevented, and the film quality is weakened and becomes brittle. Happening.

全面加熱時的加熱時間較佳為3分鐘~180分鐘,更佳為5分鐘~120分鐘。 The heating time in the case of full heating is preferably from 3 minutes to 180 minutes, more preferably from 5 minutes to 120 minutes.

作為進行全面加熱的裝置,並無特別限制,可根據目的而自公知的裝置中適宜選擇,例如可列舉乾燥烘箱、加熱板、紅外線(Infrared,IR)加熱器等。 The apparatus for performing overall heating is not particularly limited, and may be appropriately selected from known apparatuses depending on the purpose, and examples thereof include a drying oven, a hot plate, and an infrared (IR) heater.

以上述方式形成的圖案狀的抗蝕劑因具有優異的紅外線遮蔽性,故其應用範圍廣。本發明的組成物因紅外區域中的遮蔽性與紫外區域~可見區域中的透光性優異,故形成具有優異的形狀的圖案,且所形成的圖案(硬化膜)具有優異的紅外線遮蔽性,因此對於形成具備至紅外域為止具有感光度的光電二極體的裝置,特別是固體攝像元件用的阻焊劑有用。 The patterned resist formed in the above manner has a wide range of applications because of its excellent infrared shielding properties. Since the composition of the present invention is excellent in the shielding property in the infrared region and the light transmittance in the ultraviolet region to the visible region, a pattern having an excellent shape is formed, and the formed pattern (cured film) has excellent infrared shielding properties. Therefore, it is useful for a device for forming a photodiode having sensitivity to the infrared region, in particular, a solder resist for a solid-state image sensor.

如上所述,本發明的組成物不僅對於形成阻焊劑有用,而且對於形成針對固體攝像元件中的矽基板的背面的遮光膜、或針對晶圓級透鏡的遮光膜亦有用。 As described above, the composition of the present invention is useful not only for forming a solder resist but also for forming a light shielding film for the back surface of the germanium substrate in the solid-state image sensor or a light shielding film for the wafer level lens.

如此,本發明亦有關於一種具有由本發明的組成物所形 成的永久圖案的固體攝像元件。 Thus, the invention also relates to a form having the composition of the invention A solid image sensor having a permanent pattern.

以下,一面參照圖1及圖2,一面說明本發明的實施形態的固體攝像元件,但本發明並不由以下的具體例限定。 Hereinafter, a solid-state imaging device according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2, but the present invention is not limited to the following specific examples.

再者,於圖1及圖2中,對相同的部分標註相同的符號。 In addition, in FIGS. 1 and 2, the same portions are denoted by the same reference numerals.

另外,於說明時,「上」、「上方」及「上側」是指遠離矽基板10之側,「下」、「下方」及「下側」是指靠近矽基板10之側。 In addition, in the description, "upper", "upper" and "upper side" refer to the side away from the substrate 10, and "lower", "lower" and "lower side" refer to the side closer to the substrate 10 .

圖1是表示具備上述一實施形態的具體例的固體攝像元件的照相機模組的構成的概略剖面圖。 1 is a schematic cross-sectional view showing a configuration of a camera module including a solid-state image sensor of a specific example of the above-described embodiment.

圖1所示的照相機模組200經由作為連接構件的焊料球60而連接於作為安裝基板的電路基板70上。 The camera module 200 shown in FIG. 1 is connected to a circuit board 70 as a mounting substrate via a solder ball 60 as a connecting member.

詳細而言,照相機模組200具備如下的構件來構成:於矽基板的第1主面上具備攝像元件部的固體攝像元件基板100、配置於固體攝像元件基板100的第1主面側上方的玻璃基板30(透光性基板)、配置於玻璃基板30的上方的紅外線截止濾鏡42、配置於玻璃基板30及紅外線截止濾鏡42的上方且內部空間具有成像(Imaging lens)透鏡40的透鏡架50、以及以包圍固體攝像元件基板100及玻璃基板30的周圍的方式配置的遮光兼電磁遮罩44。各構件藉由黏著劑20、黏著劑41、黏著劑43、黏著劑45來黏著。 Specifically, the camera module 200 includes a solid-state imaging device substrate 100 including an imaging element portion on the first main surface of the substrate, and a first main surface side of the solid-state imaging device substrate 100. The glass substrate 30 (translucent substrate), the infrared cut filter 42 disposed above the glass substrate 30, and the lens disposed above the glass substrate 30 and the infrared cut filter 42 and having an imaging lens 40 in the internal space The shelf 50 and the light-shielding/electromagnetic shield 44 are disposed so as to surround the periphery of the solid-state imaging device substrate 100 and the glass substrate 30. Each member is adhered by the adhesive 20, the adhesive 41, the adhesive 43, and the adhesive 45.

於照相機模組200中,來自外部的射入光hν依次透過成像透鏡40、紅外線截止濾鏡42、玻璃基板30後,到達固體攝 像元件基板100的攝像元件部。 In the camera module 200, the incident light hν from the outside passes through the imaging lens 40, the infrared cut filter 42, and the glass substrate 30 in sequence, and reaches the solid photo. The image sensor element portion of the element substrate 100 is used.

另外,照相機模組200於固體攝像元件基板100的第2主面側,經由焊料球60(連接材料)而連接於電路基板70。 Further, the camera module 200 is connected to the circuit board 70 via the solder ball 60 (connection material) on the second main surface side of the solid-state image sensor substrate 100.

圖2是將圖1中的固體攝像元件基板100放大的剖面圖。 FIG. 2 is an enlarged cross-sectional view showing the solid-state imaging element substrate 100 of FIG. 1.

固體攝像元件基板100具備如下的構件來構成:作為基體的矽基板10、攝像元件12、層間絕緣膜13、基極層14、紅色的彩色濾光片15R、綠色的彩色濾光片15G、藍色的彩色濾光片15B、保護層16、微透鏡17、遮光膜18、絕緣膜22、金屬電極23、阻焊劑層24、內部電極26、以及元件面電極27。 The solid-state imaging device substrate 100 includes the following components: a germanium substrate 10 as a substrate, an image sensor 12, an interlayer insulating film 13, a base layer 14, a red color filter 15R, a green color filter 15G, and blue. The color filter 15B, the protective layer 16, the microlens 17, the light shielding film 18, the insulating film 22, the metal electrode 23, the solder resist layer 24, the internal electrode 26, and the element surface electrode 27.

但是,亦可省略阻焊劑層24。 However, the solder resist layer 24 can also be omitted.

首先,以固體攝像元件基板100的第1主面側的構成為中心進行說明。 First, the configuration of the first main surface side of the solid-state imaging device substrate 100 will be mainly described.

如圖2所示,於作為固體攝像元件基板100的基體的矽基板10的第1主面側,設置有將多個電荷耦合元件(Charge Coupled Device,CCD)或互補金氧半導體(Complementary Metal Oxide Semiconductor,CMOS)等攝像元件12二維地排列的攝像元件部。 As shown in FIG. 2, a plurality of charge coupled devices (CCDs) or complementary metal oxide semiconductors (Complementary Metal Oxide) are provided on the first main surface side of the germanium substrate 10 as a substrate of the solid-state image sensor substrate 100. An imaging element unit in which the imaging elements 12 such as Semiconductor, CMOS) are two-dimensionally arranged.

於攝像元件部中的攝像元件12上形成有層間絕緣膜13,於層間絕緣膜13上形成有基極層14。進而,以與攝像元件12相對應的方式,於基極層14上分別配置有紅色的彩色濾光片15R、綠色的彩色濾光片15G、藍色的彩色濾光片15B(以下,有時將該些彩色濾光片總稱為「彩色濾光片15」)。 An interlayer insulating film 13 is formed on the image pickup element 12 in the image pickup element portion, and a base layer 14 is formed on the interlayer insulating film 13. Further, a red color filter 15R, a green color filter 15G, and a blue color filter 15B are disposed on the base layer 14 so as to correspond to the image sensor 12 (hereinafter, sometimes These color filters are collectively referred to as "color filters 15").

於紅色的彩色濾光片15R、綠色的彩色濾光片15G、藍色的彩色濾光片15B的邊界部,以及攝像元件部的周邊,亦可設置未圖示的遮光膜。該遮光膜例如可使用公知的黑色的彩色抗蝕劑來製作。 A light shielding film (not shown) may be provided at a boundary portion between the red color filter 15R, the green color filter 15G, and the blue color filter 15B, and the periphery of the imaging element portion. This light-shielding film can be produced, for example, using a well-known black color resist.

於彩色濾光片15上形成有保護層16,且以與攝像元件12(彩色濾光片15)相對應的方式,於保護層16上形成有微透鏡17。 A protective layer 16 is formed on the color filter 15, and a microlens 17 is formed on the protective layer 16 so as to correspond to the image pickup element 12 (color filter 15).

另外,第1主面側的攝像元件部的周邊設置有周邊電路(未圖示)及內部電極26,內部電極26經由周邊電路而與攝像元件12電性連接。 Further, a peripheral circuit (not shown) and an internal electrode 26 are provided around the imaging element portion on the first main surface side, and the internal electrode 26 is electrically connected to the imaging element 12 via a peripheral circuit.

進而,於內部電極26上,經由層間絕緣膜13而形成有元件面電極27。於內部電極26與元件面電極27間的層間絕緣膜13內,形成有將該些電極間加以電性連接的接觸插塞(contact plug)(未圖示)。元件面電極27經由接觸插塞、內部電極26而用於電壓的施加及信號的讀出等。 Further, on the internal electrode 26, the element surface electrode 27 is formed via the interlayer insulating film 13. A contact plug (not shown) that electrically connects the electrodes is formed in the interlayer insulating film 13 between the internal electrode 26 and the element surface electrode 27. The element surface electrode 27 is used for voltage application, signal reading, and the like via the contact plug and the internal electrode 26.

於元件面電極27上形成有基極層14。於基極層14上形成有保護層16。形成於元件面電極27上的基極層14及保護層16開口,而形成墊開口部,從而使元件面電極27的一部分露出。 A base layer 14 is formed on the element surface electrode 27. A protective layer 16 is formed on the base layer 14. The base layer 14 and the protective layer 16 formed on the element surface electrode 27 are opened to form a pad opening, thereby exposing a part of the element surface electrode 27.

以上為固體攝像元件基板100的第1主面側的構成。 The above is the configuration of the first main surface side of the solid-state imaging device substrate 100.

於固體攝像元件基板100的第1主面側,在攝像元件部的周邊設置有黏著劑20,經由該黏著劑20而將固體攝像元件基板100與玻璃基板30黏著。 On the first main surface side of the solid-state imaging device substrate 100, an adhesive 20 is provided around the imaging element portion, and the solid imaging device substrate 100 and the glass substrate 30 are adhered via the adhesive 20.

另外,矽基板10具有貫穿該矽基板10的貫穿孔,於貫穿孔內具備作為金屬電極23的一部分的貫穿電極。藉由該貫穿電極而使攝像元件部與電路基板70電性連接。 Further, the ruthenium substrate 10 has a through hole penetrating the ruthenium substrate 10, and a through electrode as a part of the metal electrode 23 is provided in the through hole. The imaging element portion is electrically connected to the circuit board 70 by the through electrode.

其次,以固體攝像元件基板100的第2主面側的構成為中心進行說明。 Next, the configuration of the second main surface side of the solid-state imaging device substrate 100 will be mainly described.

於該第2主面側,自第2主面上遍及貫穿孔的內壁而形成有絕緣膜22。 On the second main surface side, an insulating film 22 is formed on the second main surface over the inner wall of the through hole.

於絕緣膜22上,以自矽基板10的第2主面上的區域至貫穿孔的內部的方式設置有經圖案化的金屬電極23。金屬電極23為固體攝像元件基板100中的攝像元件部與電路基板70的連接用的電極。 A patterned metal electrode 23 is provided on the insulating film 22 so as to extend from the region on the second main surface of the substrate 10 to the inside of the through hole. The metal electrode 23 is an electrode for connecting the imaging element portion and the circuit substrate 70 in the solid-state imaging device substrate 100.

上述貫穿電極是該金屬電極23之中,形成於貫穿孔的內部的部分。貫穿電極貫穿矽基板10及層間絕緣膜的一部分而到達內部電極26的下側,並與該內部電極26電性連接。 The through electrode is a portion of the metal electrode 23 that is formed inside the through hole. The through electrode penetrates a part of the germanium substrate 10 and the interlayer insulating film to reach the lower side of the internal electrode 26, and is electrically connected to the internal electrode 26.

進而,於第2主面側設置有阻焊劑層24(保護絕緣膜),該阻焊劑層24覆蓋在形成有金屬電極23的第2主面上、且具有使該金屬電極23上的一部分露出的開口部。 Further, a solder resist layer 24 (protective insulating film) is provided on the second main surface side, and the solder resist layer 24 covers the second main surface on which the metal electrode 23 is formed, and has a part of the metal electrode 23 exposed. The opening.

進而,於第2主面側設置有遮光膜18,該遮光膜18覆蓋在形成有阻焊劑層24的第2主面上、且具有使該金屬電極23上的一部分露出的開口部。 Further, a light shielding film 18 is provided on the second main surface side, and the light shielding film 18 covers the second main surface on which the solder resist layer 24 is formed, and has an opening portion for exposing a part of the metal electrode 23.

於該構成中,(1)遮光膜18與阻焊劑層24成為單一層的遮光性阻焊劑層可由本發明的組成物形成,或者(2)遮光膜18 與阻焊劑層24為不同層,並且遮光膜18可由本發明的組成物形成(於此情況下,阻焊劑層可由公知的阻焊劑組成物形成)。 In this configuration, (1) the light-shielding solder resist layer in which the light-shielding film 18 and the solder resist layer 24 are a single layer may be formed of the composition of the present invention, or (2) the light-shielding film 18 The solder resist layer 24 is a different layer, and the light shielding film 18 can be formed of the composition of the present invention (in this case, the solder resist layer can be formed of a known solder resist composition).

再者,於圖2中,遮光膜18是以覆蓋金屬電極23的一部分,並使剩餘的部分露出的方式進行圖案化,但亦能夠以使金屬電極23全部露出的方式進行圖案化(阻焊劑層24的圖案化亦同樣如此)。 In FIG. 2, the light-shielding film 18 is patterned so as to cover a part of the metal electrode 23 and expose the remaining portion. However, it is also possible to pattern the metal electrode 23 so as to be entirely exposed (solder resist). The same is true for the patterning of layer 24.

另外,亦可省略阻焊劑層24,亦可於形成有金屬電極23的第2主面上直接形成遮光膜18。 Further, the solder resist layer 24 may be omitted, or the light shielding film 18 may be directly formed on the second main surface on which the metal electrode 23 is formed.

於所露出的金屬電極23上設置有作為連接構件的焊料球60,經由該焊料球60而使固體攝像元件基板100的金屬電極23與電路基板70的未圖示的連接用電極電性連接。 A solder ball 60 as a connection member is provided on the exposed metal electrode 23, and the metal electrode 23 of the solid-state image sensor substrate 100 is electrically connected to a connection electrode (not shown) of the circuit board 70 via the solder ball 60.

以上,對固體攝像元件基板100的構成進行了說明,但固體攝像元件基板100之中,遮光膜18以外的各部分可藉由日本專利特開2009-158863號公報中段落號0033~段落號0068中所記載的方法、或日本專利特開2009-99591號公報中段落號0036~段落號0065中所記載的方法等公知的方法來形成。 The configuration of the solid-state imaging device substrate 100 has been described above. However, in the solid-state imaging device substrate 100, the portions other than the light-shielding film 18 can be used by the Japanese Patent Laid-Open Publication No. 2009-158863, paragraph number 0033 to paragraph 0068. The method described in the above, or a known method such as the method described in paragraphs 0036 to 0065 of JP-A-2009-99591, is known.

遮光膜18可藉由已述的本發明的遮光膜的製造方法來形成。 The light shielding film 18 can be formed by the above-described method for producing a light shielding film of the present invention.

層間絕緣膜13例如可藉由濺鍍或化學氣相沈積(Chemical vapor deposition,CVD)等而作為SiO2膜或SiN膜來形成。 The interlayer insulating film 13 can be formed, for example, by sputtering, chemical vapor deposition (CVD), or the like as an SiO 2 film or a SiN film.

彩色濾光片15例如使用公知的彩色抗蝕劑,並藉由光 微影來形成。 The color filter 15 uses, for example, a known color resist, and is made of light. The lithography is formed.

保護層16及基極層14例如使用公知的有機層間膜形成用抗蝕劑,並藉由光微影來形成。 As the protective layer 16 and the base layer 14, for example, a known resist for forming an organic interlayer film is used, and is formed by photolithography.

微透鏡17例如使用苯乙烯系樹脂等,並藉由光微影等來形成。 The microlens 17 is formed by, for example, photolithography using a styrene resin or the like.

當將阻焊劑層24與遮光膜18加以組合而形成單一層的遮光性阻焊劑層時,該層較佳為由本發明的組成物形成。 When the solder resist layer 24 and the light shielding film 18 are combined to form a single layer of the light-shielding solder resist layer, the layer is preferably formed of the composition of the present invention.

另一方面,當阻焊劑層24與遮光膜18為不同層時,阻焊劑層24較佳為使用例如含有酚系樹脂、或聚醯亞胺系樹脂、胺系樹脂的公知的阻焊劑,並藉由光微影來形成。 On the other hand, when the solder resist layer 24 and the light shielding film 18 are different layers, the solder resist layer 24 preferably uses, for example, a known solder resist containing a phenol resin, a polyimide resin, or an amine resin. Formed by light lithography.

焊料球60例如使用Sn-Pb(共晶)、95Pb-Sn(高鉛高熔點焊料)、作為無Pb焊料的Sn-Ag、Sn-Cu、Sn-Ag-Cu等來形成。焊料球60例如形成為直徑100μm~1000μm(較佳為直徑150μm~700μm)的球狀。 The solder ball 60 is formed using, for example, Sn-Pb (eutectic), 95Pb-Sn (high-lead high-melting solder), Sn-Ag, Sn-Cu, Sn-Ag-Cu, or the like as a Pb-free solder. The solder ball 60 is formed, for example, in a spherical shape having a diameter of 100 μm to 1000 μm (preferably, a diameter of 150 μm to 700 μm).

內部電極26及元件面電極27例如藉由化學機械研磨(Chemical Mechanical Polishing)、或光微影及蝕刻而作為Cu等的金屬電極來形成。 The internal electrode 26 and the element surface electrode 27 are formed as a metal electrode of Cu or the like by, for example, chemical mechanical polishing, photolithography, and etching.

金屬電極23例如藉由濺鍍、光微影、蝕刻、及電解鍍敷,而作為Cu、Au、Al、Ni、W、Pt、Mo、Cu化合物、W化合物、Mo化合物等的金屬電極來形成。金屬電極23可為單層構成,亦可為包含2層以上的積層構成。金屬電極23的膜厚例如設為0.1μm~20μm(較佳為0.1μm~10μm)。矽基板10並無特別限定, 但可使用藉由削去基板背面而變薄的矽基板。基板的厚度並無限定,例如使用厚度為20μm~200μm(較佳為30μm~150μm)的矽晶圓。 The metal electrode 23 is formed as a metal electrode such as Cu, Au, Al, Ni, W, Pt, Mo, a Cu compound, a W compound, or a Mo compound by sputtering, photolithography, etching, or electrolytic plating. . The metal electrode 23 may be composed of a single layer or may have a laminated structure including two or more layers. The film thickness of the metal electrode 23 is, for example, 0.1 μm to 20 μm (preferably 0.1 μm to 10 μm). The germanium substrate 10 is not particularly limited. However, a tantalum substrate which is thinned by cutting off the back surface of the substrate can be used. The thickness of the substrate is not limited, and for example, a tantalum wafer having a thickness of 20 μm to 200 μm (preferably 30 μm to 150 μm) is used.

矽基板10的貫穿孔例如藉由光微影及反應性離子蝕刻(Reactive Ion Etching,RIE)來形成。 The through hole of the ruthenium substrate 10 is formed, for example, by photolithography and reactive ion etching (RIE).

以上,參照圖1及圖2對作為上述一實施形態的具體例的固體攝像元件基板100進行了說明,但上述一實施形態並不限於圖1及圖2的形態,只要是背面側具有金屬電極及遮光膜的構成,則其構成並無特別限定。 Although the solid-state imaging device substrate 100 as a specific example of the above-described embodiment has been described above with reference to FIG. 1 and FIG. 2, the above-described embodiment is not limited to the embodiment of FIGS. 1 and 2, and is provided with a metal electrode on the back side. The configuration of the light shielding film is not particularly limited.

其次,一面參照圖式,一面對將自本發明的組成物所獲得的永久圖案應用於晶圓級透鏡的遮光膜的例子進行說明。 Next, an example in which a permanent pattern obtained from the composition of the present invention is applied to a light-shielding film of a wafer-level lens will be described with reference to the drawings.

圖7是表示具有多個晶圓級透鏡的晶圓級透鏡陣列的構成的一例的平面圖。 7 is a plan view showing an example of a configuration of a wafer level lens array having a plurality of wafer level lenses.

如圖7所示,晶圓級透鏡陣列具備基板410、排列於該基板410上的透鏡412。此處,於圖7中,相對於基板410,將多個透鏡412二維地排列,但亦可將多個透鏡412一維地排列。 As shown in FIG. 7, the wafer level lens array includes a substrate 410 and a lens 412 arranged on the substrate 410. Here, in FIG. 7, the plurality of lenses 412 are two-dimensionally arranged with respect to the substrate 410, but the plurality of lenses 412 may be arranged one-dimensionally.

另外,圖8是圖7中所示的A-A線剖面圖。 In addition, FIG. 8 is a cross-sectional view taken along line A-A shown in FIG.

如圖8所示,於晶圓級透鏡陣列中,在排列於基板410上的多個透鏡412之間,設置有防止來自透鏡412以外的部位的光透過的遮光膜414。 As shown in FIG. 8, in the wafer level lens array, a light shielding film 414 that prevents light from passing through a portion other than the lens 412 is provided between the plurality of lenses 412 arranged on the substrate 410.

晶圓級透鏡包含存在於基板410上的1個透鏡412、及設置於其周緣部的遮光膜414。本發明的組成物可用於該遮光膜 414的形成。 The wafer level lens includes one lens 412 existing on the substrate 410 and a light shielding film 414 provided on the peripheral portion thereof. The composition of the present invention can be used for the light shielding film Formation of 414.

以下,以如圖7般將多個透鏡412相對於基板410二維地排列的晶圓級透鏡陣列的構成為例進行說明。 Hereinafter, a configuration of a wafer-level lens array in which a plurality of lenses 412 are two-dimensionally arranged with respect to the substrate 410 as shown in FIG. 7 will be described as an example.

透鏡412通常包含與基板410相同的材料,其於該基板410上一體地成形、或者作為其他構造體而成形後固定在基板上。此處,列舉了一例,但本發明的晶圓級透鏡並不限定於該形態,可採用如下等各種形態:採用多層構造的晶圓級透鏡、藉由切割(dicing)而分離成透鏡模組的晶圓級透鏡。 The lens 412 generally comprises the same material as the substrate 410, which is integrally formed on the substrate 410 or formed as another structure and then fixed on the substrate. Although an example is given here, the wafer-level lens of the present invention is not limited to this embodiment, and various forms such as a wafer-level lens having a multilayer structure and being separated into a lens module by dicing may be employed. Wafer level lens.

作為形成透鏡412的材料,例如可列舉玻璃。玻璃的種類豐富,可選擇具有高折射率者,因此適合於欲具有大功率的透鏡的素材。另外,玻璃亦具有耐熱性優異、經得起對於攝像單元等的回流安裝這一優點。 As a material which forms the lens 412, glass is mentioned, for example. There are many types of glass, and those having a high refractive index can be selected, and thus are suitable for materials having a lens having high power. Further, the glass is also excellent in heat resistance and can withstand the reflow mounting of an image pickup unit or the like.

作為形成透鏡412的其他材料,可列舉樹脂。樹脂的加工性優異,適合於利用模具等簡易且廉價地形成透鏡面。 As another material which forms the lens 412, a resin is mentioned. The resin is excellent in workability, and is suitable for forming a lens surface easily and inexpensively by a mold or the like.

於此情況下,於形成透鏡412時,較佳為使用能量硬化性的樹脂。該能量硬化性的樹脂可為藉由熱而硬化的樹脂、或藉由活性能量線的照射(例如熱、紫外線、電子束照射)而硬化的樹脂的任一種。 In this case, when forming the lens 412, it is preferred to use an energy curable resin. The energy curable resin may be either a resin that is cured by heat or a resin that is cured by irradiation with an active energy ray (for example, heat, ultraviolet rays, or electron beam irradiation).

此種能量硬化性的樹脂可使用任一種公知的樹脂,但若考慮攝像單元的回流安裝,則較佳為軟化點例如為200℃以上等軟化點比較高的樹脂,更佳為軟化點為250℃以上的樹脂。 Any of the known resins may be used as the energy curable resin. However, in consideration of reflow mounting of the image pickup unit, it is preferable that the softening point is, for example, a resin having a relatively high softening point such as 200 ° C or higher, and more preferably a softening point of 250. Resin above °C.

以下,針對晶圓級透鏡的形態及製作,參照圖9~圖14, 以晶圓級透鏡陣列的製作方法為例進行具體說明。 Hereinafter, the form and production of the wafer level lens will be described with reference to FIGS. 9 to 14 . A method of fabricating a wafer level lens array will be specifically described as an example.

[晶圓級透鏡的形態及製作(1)] [Formation and Fabrication of Wafer Level Lens (1)]

-透鏡的形成- - Formation of the lens -

首先,參照圖9及圖10(A)~圖10(C),對在基板410上形成透鏡412的方法進行說明。 First, a method of forming the lens 412 on the substrate 410 will be described with reference to FIGS. 9 and 10(A) to 10(C).

此處,圖9是表示將作為透鏡形成用的樹脂組成物的成形材料(圖9中記載為M)供給至基板410上的狀態的圖。 Here, FIG. 9 is a view showing a state in which a molding material (described as M in FIG. 9) as a resin composition for forming a lens is supplied onto the substrate 410.

另外,圖10(A)~圖10(C)是表示利用模具460使透鏡412於基板410上成形的程序的圖。 10(A) to 10(C) are diagrams showing a procedure for molding the lens 412 on the substrate 410 by the mold 460.

如圖9所示,使用分配器450將成形材料M滴加至基板410的使透鏡412成形的部位。此處,於所供給的1個部位上,供給相當於1個透鏡412量的成形材料M。 As shown in FIG. 9, the forming material M is dropped onto the portion of the substrate 410 where the lens 412 is shaped using the dispenser 450. Here, the molding material M corresponding to the amount of one lens 412 is supplied to one of the supplied portions.

於將成形材料M供給至基板410上後,如圖10(A)所示,於基板410的供給有成形材料M的面側,配置用以使透鏡412成形的模具460。 After the molding material M is supplied onto the substrate 410, as shown in FIG. 10(A), a mold 460 for molding the lens 412 is disposed on the surface side of the substrate 410 on which the molding material M is supplied.

此處,於模具460中,對應於所期望的透鏡412的數量而設置有用以轉印透鏡412的形狀的凹部462。 Here, in the mold 460, a recess 462 having a shape to transfer the lens 412 is provided corresponding to the number of the desired lenses 412.

如圖10(B)所示,將模具460按壓於基板410上的成形材料M上,使成形材料M仿照凹部462的形狀而變形。而且,於將模具460按壓在成形材料M上的狀態下,當成形材料M為熱硬化性樹脂或紫外線硬化性樹脂時,自模具460的外側照射熱或紫外線,而使成形材料M硬化。 As shown in FIG. 10(B), the mold 460 is pressed against the molding material M on the substrate 410, and the molding material M is deformed in accordance with the shape of the concave portion 462. In the state in which the mold 460 is pressed against the molding material M, when the molding material M is a thermosetting resin or an ultraviolet curable resin, heat or ultraviolet rays are irradiated from the outside of the mold 460 to cure the molding material M.

於使成形材料M硬化後,如圖10(C)所示,自模具460使基板410及透鏡412脫模。 After the molding material M is cured, as shown in FIG. 10(C), the substrate 410 and the lens 412 are released from the mold 460.

-遮光膜的形成- - Formation of light shielding film -

其次,參照圖11(A)~圖11(C),對在透鏡412的周緣部形成遮光膜414的方法進行說明。 Next, a method of forming the light shielding film 414 on the peripheral portion of the lens 412 will be described with reference to FIGS. 11(A) to 11(C).

此處,圖11(A)~圖11(C)是表示於形成有透鏡412的基板410上設置遮光膜414的步驟的概略剖面圖。 Here, FIGS. 11(A) to 11(C) are schematic cross-sectional views showing a step of providing a light shielding film 414 on the substrate 410 on which the lens 412 is formed.

遮光膜414的形成方法包括:於基板410上塗佈本發明的組成物而形成遮光性塗佈層414A的遮光性塗佈層形成步驟(參照圖11(A));隔著遮罩470對該遮光性塗佈層414A進行圖案曝光的曝光步驟(參照圖11(B));以及對曝光後的遮光性塗佈層414A進行顯影來將未硬化部去除,而形成圖案狀的遮光膜414的顯影步驟(參照圖11(C))。 The method of forming the light-shielding film 414 includes a step of forming a light-shielding coating layer on which the composition of the present invention is applied onto the substrate 410 to form the light-shielding coating layer 414A (see FIG. 11(A)); The light-shielding coating layer 414A performs an exposure step of pattern exposure (see FIG. 11(B)); and develops the exposed light-shielding coating layer 414A to remove the uncured portion to form a patterned light-shielding film 414. Development step (refer to Fig. 11 (C)).

再者,遮光膜414的形成可於製作透鏡412之前進行,亦可於製作透鏡412之後進行,此處,對製作透鏡412後的方法進行詳述。 Further, the formation of the light shielding film 414 may be performed before the lens 412 is formed, or may be performed after the lens 412 is formed. Here, the method of fabricating the lens 412 will be described in detail.

以下,對遮光膜414的形成方法中的各步驟進行說明。 Hereinafter, each step in the method of forming the light shielding film 414 will be described.

<遮光性塗佈層形成步驟> <Light-shielding coating layer forming step>

於遮光性塗佈層形成步驟中,如圖11(A)所示,於基板410上塗佈組成物而形成包含該組成物的光反射率低的遮光性塗佈層414A。此時,遮光性塗佈層414A是以將基板410的表面、及透鏡412的透鏡面412a與透鏡緣部412b的表面全部覆蓋的方 式形成。 In the light-shielding coating layer forming step, as shown in FIG. 11(A), a composition is applied onto the substrate 410 to form a light-shielding coating layer 414A having a low light reflectance of the composition. At this time, the light-shielding coating layer 414A is a surface that covers the entire surface of the substrate 410 and the lens surface 412a of the lens 412 and the surface of the lens edge portion 412b. Formed.

作為可用於本步驟的基板410,並無特別限制。例如可列舉:鈉玻璃、無鹼玻璃、派熱克斯(pyrex)(註冊商標)玻璃、石英玻璃、及透明樹脂等。 The substrate 410 which can be used in this step is not particularly limited. For example, sodium glass, an alkali-free glass, pyrex (registered trademark) glass, quartz glass, a transparent resin, etc. are mentioned.

再者,此處所述的基板410於將透鏡412與基板410一體形成的形態中,是指包含透鏡412與基板410兩者的形態。 In addition, the substrate 410 described herein is a form in which the lens 412 and the substrate 410 are integrally formed, and includes a form including both the lens 412 and the substrate 410.

另外,為了改良與上部的層的密接、防止物質的擴散,或者為了基板10表面的平坦化,視需要亦可於該些基板410上設置底塗層。 Further, in order to improve the adhesion to the upper layer, prevent the diffusion of the substance, or to planarize the surface of the substrate 10, an undercoat layer may be provided on the substrates 410 as needed.

作為於基板410及透鏡412上塗佈組成物的方法,可應用狹縫塗佈、噴塗法、噴墨法、旋轉塗佈、流延塗佈、輥塗、網版印刷法等各種塗佈方法。 As a method of coating the composition on the substrate 410 and the lens 412, various coating methods such as slit coating, spray coating, inkjet method, spin coating, cast coating, roll coating, and screen printing can be applied. .

作為組成物的剛塗佈之後的膜厚,就塗佈膜的膜厚均勻性、塗佈溶劑的乾燥的容易性的觀點而言,較佳為0.1μm~10μm,更佳為0.2μm~5μm,進而更佳為0.2μm~3μm。 The film thickness immediately after application of the composition is preferably from 0.1 μm to 10 μm, more preferably from 0.2 μm to 5 μm, from the viewpoint of uniformity of film thickness of the coating film and ease of drying of the coating solvent. More preferably, it is 0.2 μm to 3 μm.

塗佈於基板410上的遮光性塗佈層414A的乾燥(預烘烤)可使用加熱板、烘箱等,於50℃~140℃的溫度下進行10秒~300秒。 The drying (prebaking) of the light-shielding coating layer 414A applied to the substrate 410 can be carried out at a temperature of 50 ° C to 140 ° C for 10 seconds to 300 seconds using a hot plate, an oven or the like.

組成物的乾燥後的塗佈膜厚(以下,適宜稱為「乾燥膜厚」)可根據所期望的遮光性等性能而任意地選擇,大概為0.1μm以上、未滿50μm的範圍。 The thickness of the coating film after drying of the composition (hereinafter, referred to as "dry film thickness" as appropriate) can be arbitrarily selected depending on properties such as desired light blocking properties, and is approximately 0.1 μm or more and less than 50 μm.

<曝光步驟> <Exposure step>

於曝光步驟中,將於遮光性塗佈層形成步驟中形成的遮光性塗佈層414A曝光成圖案狀。圖案曝光可為掃描曝光,但較佳為如圖11(B)所示,隔著具有規定的遮罩圖案的遮罩70進行曝光的形態。 In the exposure step, the light-shielding coating layer 414A formed in the light-shielding coating layer forming step is exposed in a pattern. The pattern exposure may be a scanning exposure, but it is preferably a form in which exposure is performed through a mask 70 having a predetermined mask pattern as shown in FIG. 11(B).

於本步驟中的曝光中,遮光性塗佈層414A的圖案曝光是隔著規定的遮罩圖案進行曝光,藉由該曝光而僅使遮光性塗佈層414A之中受到光照射的部分硬化。此處,使用對透鏡緣部412b的表面與透鏡412間的基板410的表面照射光的遮罩圖案。藉此,僅除透鏡面412a以外的區域的遮光性塗佈層414A因光照射而硬化,該硬化區域形成遮光膜414。 In the exposure in this step, the pattern exposure of the light-shielding coating layer 414A is performed by a predetermined mask pattern, and only the portion of the light-shielding coating layer 414A that is irradiated with light is cured by the exposure. Here, a mask pattern that illuminates the surface of the substrate 410 between the surface of the lens edge portion 412b and the lens 412 is used. Thereby, only the light-shielding coating layer 414A in the region other than the lens surface 412a is cured by light irradiation, and the hardened region forms the light shielding film 414.

作為可於曝光時使用的放射線,尤其可較佳地使用g射線、h射線、i射線等紫外線。該放射線可為單一波長的光源,亦可使用如高壓水銀燈般包含所有波長的光源。 As the radiation which can be used for exposure, ultraviolet rays such as g-rays, h-rays, and i-rays can be preferably used. The radiation may be a single wavelength source, or a source of all wavelengths such as a high pressure mercury lamp.

<顯影步驟> <Development step>

繼而,藉由進行鹼顯影處理(顯影步驟),而使曝光中的光未照射部分,即遮光性塗佈層414A的未硬化區域溶出至鹼性水溶液中,僅殘留因光照射而硬化的區域。 Then, by performing an alkali development treatment (development step), the unexposed portion of the light that is not irradiated, that is, the uncured region of the light-shielding coating layer 414A is eluted into the alkaline aqueous solution, and only the region hardened by the light irradiation remains. .

具體而言,對如圖11(B)所示般進行了曝光的遮光性塗佈層414A進行顯影,藉此如圖11(C)所示,僅將形成於透鏡面12a上的遮光性塗佈層414A去除,而於其以外的區域形成經硬化的遮光膜414。 Specifically, the light-shielding coating layer 414A which has been exposed as shown in FIG. 11(B) is developed, whereby only the light-shielding coating formed on the lens surface 12a is applied as shown in FIG. 11(C). The cloth layer 414A is removed, and a hardened light-shielding film 414 is formed in a region other than the cloth layer 414A.

作為用於顯影步驟的顯影液(鹼性水溶液)中所含有的 鹼劑,可使用有機或無機的鹼劑、及該些的組合的任一種。於形成本發明中的遮光膜時,就難以對周圍的電路等造成損傷這一觀點而言,理想的是使用有機鹼劑。 Contained as a developing solution (alkaline aqueous solution) used in the developing step As the alkali agent, an organic or inorganic alkali agent and any combination of these may be used. In the case of forming the light-shielding film of the present invention, it is difficult to damage the surrounding circuit or the like, and it is preferable to use an organic alkali agent.

作為用於顯影液的鹼劑,例如可列舉氨水、乙胺、二乙胺、二甲基乙醇胺、氫氧化四甲基銨、氫氧化四乙基銨、膽鹼、吡咯、哌啶、1,8-二氮雜雙環-[5,4,0]-7-十一烯等有機鹼性化合物(有機鹼劑),氫氧化鈉、氫氧化鉀、碳酸氫鈉、碳酸氫鉀等無機化合物(無機鹼劑)等,作為顯影液,較佳為使用以濃度變成0.001質量%~10質量%,較佳為變成0.01質量%~1質量%的方式,利用純水對該些鹼劑進行稀釋而成的鹼性水溶液。 Examples of the alkaline agent used in the developer include ammonia water, ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, pyrrole, piperidine, and 1, An organic basic compound (organic alkali agent) such as 8-diazabicyclo-[5,4,0]-7-undecene, an inorganic compound such as sodium hydroxide, potassium hydroxide, sodium hydrogencarbonate or potassium hydrogencarbonate ( The inorganic alkali agent or the like is preferably used as a developing solution to dilute the alkaline agent by using pure water so as to have a concentration of 0.001% by mass to 10% by mass, preferably 0.01% by mass to 1% by mass. An alkaline aqueous solution.

顯影溫度通常為20℃~30℃,顯影時間為20秒~90秒的範圍。 The development temperature is usually 20 ° C to 30 ° C, and the development time is in the range of 20 seconds to 90 seconds.

再者,當使用了包含此種鹼性水溶液的顯影液時,通常於利用顯影液將塗佈膜的未曝光部去除後,利用純水進行清洗(淋洗)。即,於顯影處理後,利用純水充分地清洗、去除剩餘的顯影液,進而實施乾燥步驟。 In addition, when a developing solution containing such an alkaline aqueous solution is used, the unexposed portion of the coating film is usually removed by a developing solution, and then washed (washed) with pure water. That is, after the development treatment, the remaining developer is sufficiently washed and removed with pure water, and the drying step is further carried out.

再者,於進行了上述遮光性塗佈層形成步驟、曝光步驟、及顯影步驟後,視需要亦可包含藉由加熱(後烘烤)及/或曝光對所形成的遮光膜(遮光圖案)進行硬化的硬化步驟。 Furthermore, after the light-shielding coating layer forming step, the exposing step, and the developing step, the light-shielding film (light-shielding pattern) formed by heating (post-baking) and/or exposure may be included as needed. A hardening step of hardening is performed.

後烘烤是用以實現完全硬化的顯影後的加熱處理,通常進行100℃~250℃的熱硬化處理。後烘烤的溫度、及時間等條件可根據基板410或透鏡412的素材而適宜設定。例如,當基板412 為玻璃時,上述溫度範圍之中,較佳為採用180℃~240℃。 The post-baking is a heat treatment after development for achieving complete hardening, and is usually performed by a heat hardening treatment at 100 ° C to 250 ° C. Conditions such as temperature and time of post-baking can be appropriately set depending on the material of the substrate 410 or the lens 412. For example, when the substrate 412 In the case of glass, it is preferable to use 180 ° C to 240 ° C among the above temperature ranges.

可使用加熱板或對流烘箱(熱風循環式乾燥機)、高頻加熱機等加熱裝置,以成為上述條件的方式,藉由連續式或分批式來對顯影後所形成的遮光膜414進行該後烘烤處理。 The heating means such as a hot plate or a convection oven (hot air circulation dryer) or a high-frequency heating machine can be used to perform the above-described conditions, and the light-shielding film 414 formed after development can be subjected to continuous or batch type. Post-baking treatment.

再者,於以上的程序中,以透鏡412的形狀為凹狀的情況為例進行了說明,但形狀並無特別限定,亦可為凸狀或非球面的形狀。另外,於上述程序中,以使多個透鏡412於基板410的一個面上成形的晶圓級透鏡為例進行了說明,但亦可設為使多個透鏡412於基板410的兩個面成形的構成,於此情況下,於兩個面上,在除透鏡面以外區域中形成圖案狀的遮光膜414。 In the above procedure, the case where the shape of the lens 412 is concave is described as an example, but the shape is not particularly limited, and may be a convex or aspherical shape. Further, in the above-described procedure, a wafer-level lens in which a plurality of lenses 412 are formed on one surface of the substrate 410 has been described as an example. However, a plurality of lenses 412 may be formed on both surfaces of the substrate 410. In this case, a pattern-like light-shielding film 414 is formed on the two surfaces in a region other than the lens surface.

[晶圓級透鏡的形態及製作(2)] [Formation and Fabrication of Wafer Level Lens (2)]

圖12是表示晶圓級透鏡陣列的其他構成例的圖。圖12所示的晶圓級透鏡為利用相同的成形材料使基板410與透鏡412同時成形的構成(一體型(monolithic type))。 Fig. 12 is a view showing another configuration example of a wafer level lens array. The wafer level lens shown in FIG. 12 is a configuration (monolithic type) in which the substrate 410 and the lens 412 are simultaneously molded by the same molding material.

當製作此種晶圓級透鏡時,作為成形材料,可使用與上述成形材料相同者。另外,於該例中,於基板410的一個面(圖中的上側的面)上形成多個凹狀的透鏡412,於另一個面(圖中的下側的面)上形成多個凸狀的透鏡420。另外,於基板410的除透鏡面412a以外的區域,即於基板410的表面及透鏡緣部412b的表面形成有圖案狀的遮光膜414。作為形成遮光膜414的時的圖案化方法,可應用上述程序。 When such a wafer level lens is produced, the same material as the above-mentioned molding material can be used as the molding material. Further, in this example, a plurality of concave lenses 412 are formed on one surface (the upper surface in the drawing) of the substrate 410, and a plurality of convex shapes are formed on the other surface (the lower surface in the drawing). Lens 420. Further, a pattern-shaped light-shielding film 414 is formed on a surface of the substrate 410 other than the lens surface 412a, that is, on the surface of the substrate 410 and the surface of the lens edge portion 412b. As the patterning method at the time of forming the light shielding film 414, the above procedure can be applied.

[晶圓級透鏡的形態及製作(3)] [Formation and Fabrication of Wafer Level Lens (3)]

其次,參照圖13(A)~圖13(C)及圖14(A)~圖14(C),對晶圓級透鏡陣列的其他構成例與製作其他構成例的程序進行說明。 Next, another configuration example of the wafer level lens array and a program for creating another configuration example will be described with reference to FIGS. 13(A) to 13(C) and FIGS. 14(A) to 14(C).

此處,圖13(A)~圖13(C)是表示形成圖案狀的遮光膜414的其他步驟的概略圖。 Here, FIGS. 13(A) to 13(C) are schematic views showing other steps of forming the patterned light shielding film 414.

另外,圖14(A)~圖14(C)是表示首先形成圖案狀的遮光膜414,然後使透鏡412成形的步驟的概略圖。 14(A) to 14(C) are schematic views showing a procedure of first forming a pattern-shaped light-shielding film 414 and then molding the lens 412.

圖9~圖12所示的晶圓級透鏡陣列的例子是於設置有透鏡412的基板410上形成圖案狀的遮光膜414的例子,但以下所說明的程序是首先於基板410上形成圖案狀的遮光膜414,然後使透鏡412於基板410上成形的程序。 An example of the wafer-level lens array shown in FIGS. 9 to 12 is an example in which a patterned light-shielding film 414 is formed on a substrate 410 on which a lens 412 is provided. However, the procedure described below first forms a pattern on the substrate 410. The light-shielding film 414 is then subjected to a process of forming the lens 412 on the substrate 410.

-遮光膜的形成- - Formation of light shielding film -

首先,如圖13(A)所示,進行於基板410上塗佈組成物來形成遮光性塗佈層414A的遮光性塗佈層形成步驟。 First, as shown in FIG. 13(A), a light-shielding coating layer forming step of applying a composition onto the substrate 410 to form the light-shielding coating layer 414A is performed.

其後,利用加熱板、烘箱等,於50℃~140℃的溫度下對塗佈於基板410上的遮光性塗佈層414A進行10秒~300秒的乾燥。組成物的乾燥膜厚可根據所期望的遮光性等性能而任意地選擇,大概為0.1μm以上、未滿50μm的範圍。 Thereafter, the light-shielding coating layer 414A applied to the substrate 410 is dried at a temperature of 50 ° C to 140 ° C for 10 seconds to 300 seconds using a hot plate or an oven. The dry film thickness of the composition can be arbitrarily selected in accordance with properties such as desired light blocking properties, and is approximately 0.1 μm or more and less than 50 μm.

繼而,如圖13(B)所示,進行隔著遮罩470將遮光性塗佈層形成步驟中所形成的遮光性塗佈層414A曝光成圖案狀的曝光步驟。遮罩470具有規定的遮罩圖案。 Then, as shown in FIG. 13(B), an exposure step of exposing the light-shielding coating layer 414A formed in the light-shielding coating layer forming step to a pattern is performed through the mask 470. The mask 470 has a prescribed mask pattern.

於本步驟中的曝光中,對遮光性塗佈層414進行圖案曝 光,藉此僅使遮光性塗佈層414A之中受到光照射的部分硬化。此處,使用僅對如下區域的遮光性塗佈層414A照射光的遮罩圖案:除於後續步驟中使透鏡412成形時成為透鏡412的透鏡開口414a的部位以外的區域。藉由該方法,僅除成為透鏡412的透鏡開口414a的部位以外的區域的遮光性塗佈層414A因光照射而硬化。再者,作為可於曝光時使用的放射線,與先前說明的程序同樣地,可較佳地使用g射線、h射線、i射線等紫外線。 In the exposure in this step, the light-shielding coating layer 414 is patterned. By this, only the portion of the light-shielding coating layer 414A that is irradiated with light is hardened. Here, a mask pattern that irradiates light only to the light-shielding coating layer 414A in the following region is used: a region other than the portion of the lens opening 414a of the lens 412 when the lens 412 is formed in the subsequent step. According to this method, only the light-shielding coating layer 414A in the region other than the portion of the lens opening 414a of the lens 412 is cured by light irradiation. Further, as the radiation which can be used for exposure, ultraviolet rays such as g-rays, h-rays, and i-rays can be preferably used in the same manner as the procedure described above.

繼而,進行鹼顯影處理(顯影步驟),藉此僅如下區域的遮光性塗佈層414A溶出至鹼性水溶液:與作為上述圖案曝光中的遮光性塗佈層414A的未硬化區域的透鏡412的透鏡開口414a相當的區域。此時,如圖13(C)所示,除透鏡412的透鏡開口414a的區域以外的區域的經光硬化的遮光性塗佈層414A殘存於基板410上,而形成遮光膜414。 Then, an alkali development treatment (development step) is performed, whereby only the light-shielding coating layer 414A in the following region is eluted to the alkaline aqueous solution: the lens 412 of the uncured region which is the light-shielding coating layer 414A in the above-described pattern exposure The area corresponding to the lens opening 414a. At this time, as shown in FIG. 13(C), the light-curable light-shielding coating layer 414A in the region other than the region of the lens opening 414a of the lens 412 remains on the substrate 410, and the light-shielding film 414 is formed.

此處,作為顯影液的鹼性水溶液中的鹼劑可使用與先前說明的程序相同的鹼劑。顯影處理後,其後將剩餘的顯影液清洗去除,並實施乾燥。 Here, as the alkali agent in the alkaline aqueous solution of the developer, the same alkali agent as the procedure described above can be used. After the development treatment, the remaining developer is then washed and removed, and dried.

於本實施形態中,於進行了上述遮光性塗佈層形成步驟、曝光步驟、及顯影步驟後,視需要亦可實施藉由上述後烘烤及/或曝光對所形成的遮光膜進行硬化的硬化步驟。 In the present embodiment, after the light-shielding coating layer forming step, the exposing step, and the developing step are performed, the formed light-shielding film may be cured by the post-baking and/or exposure as necessary. Hardening step.

本發明的組成物即便於例如附著在塗佈裝置噴出部的噴嘴、塗佈裝置的配管部、塗佈裝置內等的情況下,亦可使用公知的清洗液而容易地清洗去除。於此情況下,為了進行更高效的 清洗去除,較佳為將上述作為本發明的組成物中所含有的溶劑所揭示的溶劑用作清洗液。 When the composition of the present invention is attached to, for example, a nozzle of a coating apparatus discharge unit, a piping unit of a coating apparatus, a coating apparatus, or the like, it can be easily removed by washing using a known cleaning liquid. In this case, in order to be more efficient For the cleaning and removal, it is preferred to use the solvent disclosed as the solvent contained in the composition of the present invention as a cleaning liquid.

另外,日本專利特開平7-128867號公報、日本專利特開平7-146562號公報、日本專利特開平8-278637號公報、日本專利特開2000-273370號公報、日本專利特開2006-85140號公報、日本專利特開2006-291191號公報、日本專利特開2007-2101號公報、日本專利特開2007-2102號公報、日本專利特開2007-281523號公報等中所記載的清洗液亦可適宜地用作本發明的組成物的清洗去除用的清洗液。 In addition, Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The cleaning liquid described in the Japanese Patent Laid-Open Publication No. Hei. No. 2007-281523, the Japanese Patent Publication No. 2007-2102, and the Japanese Patent Publication No. 2007-281523, and the like can also be used. It is suitably used as a cleaning liquid for cleaning and removal of the composition of the present invention.

作為清洗液,較佳為使用伸烷基二醇單烷基醚羧酸酯、或伸烷基二醇單烷基醚。 As the cleaning liquid, an alkylene glycol monoalkyl ether carboxylate or an alkylene glycol monoalkyl ether is preferably used.

可用作清洗液的該些溶劑可單獨使用,亦可將2種以上混合使用。 These solvents which can be used as the cleaning liquid can be used singly or in combination of two or more.

當將2種以上的溶劑混合時,較佳為將具有羥基的溶劑與不具有羥基的溶劑混合而成的混合溶劑。具有羥基的溶劑與不具有羥基的溶劑的質量比為1/99~99/1,較佳為10/90~90/10,更佳為20/80~80/20。作為混合溶劑,特佳為比率為60/40的丙二醇單甲醚乙酸酯(PGMEA;別名1-甲氧基-2-乙醯氧基丙烷)與丙二醇單甲醚(PGME;別名1-甲氧基-2-丙醇)的混合溶劑。 When two or more solvents are mixed, a mixed solvent obtained by mixing a solvent having a hydroxyl group and a solvent having no hydroxyl group is preferred. The mass ratio of the solvent having a hydroxyl group to the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 80/20. As a mixed solvent, particularly preferred is a ratio of 60/40 propylene glycol monomethyl ether acetate (PGMEA; alias 1-methoxy-2-ethoxypropane propane) and propylene glycol monomethyl ether (PGME; alias 1-A A mixed solvent of oxy-2-propanol).

再者,為了提昇清洗液對於組成物的滲透性,亦可向清洗液中添加上述作為組成物可含有的界面活性劑所揭示的界面活性劑。 Further, in order to enhance the permeability of the cleaning liquid to the composition, the surfactant disclosed as the surfactant which can be contained in the composition may be added to the cleaning liquid.

-透鏡的形成- - Formation of the lens -

其次,對形成遮光膜414後,形成透鏡412的步驟進行說明。 Next, a step of forming the lens 412 after forming the light shielding film 414 will be described.

如圖14(A)所示,利用分配器450將構成透鏡412的成形材料M滴加至形成有圖案狀的遮光膜414的基板410上。為了覆蓋與透鏡412的透鏡開口414a相當的區域,以包含鄰接於該開口的遮光膜414的端部的一部分的方式供給成形材料M。 As shown in FIG. 14(A), the molding material M constituting the lens 412 is dropped onto the substrate 410 on which the patterned light shielding film 414 is formed by the dispenser 450. In order to cover a region corresponding to the lens opening 414a of the lens 412, the molding material M is supplied in such a manner as to include a part of the end portion of the light shielding film 414 adjacent to the opening.

於將成形材料M供給至基板410上後,如圖14(B)所示,於基板410的供給有成形材料M的面側,配置用以使透鏡成形的模具480。於模具480中,對應於所期望的透鏡412的數量而設置有用以轉印透鏡412的形狀的凹部482。 After the molding material M is supplied onto the substrate 410, as shown in FIG. 14(B), a mold 480 for molding the lens is disposed on the surface side of the substrate 410 on which the molding material M is supplied. In the mold 480, a recess 482 having a shape to transfer the lens 412 is provided corresponding to the number of lenses 412 desired.

將模具480按壓於基板410上的成形材料M上,使成形材料M仿照凹部的形狀而變形。而且,於將模具480按壓在成形材料M上的狀態下,當成形材料M為熱硬化性樹脂或紫外線硬化性樹脂時,自模具的外側照射熱或紫外線,藉此使成形材料M硬化。 The mold 480 is pressed against the molding material M on the substrate 410, and the molding material M is deformed in accordance with the shape of the concave portion. Further, in a state where the mold 480 is pressed against the molding material M, when the molding material M is a thermosetting resin or an ultraviolet curable resin, heat or ultraviolet rays are irradiated from the outside of the mold, whereby the molding material M is cured.

於使成形材料M硬化後,自模具480使基板410及透鏡412脫模,如圖14(C)所示,獲得於基板410上具備圖案狀的遮光膜414的晶圓級透鏡。 After the molding material M is cured, the substrate 410 and the lens 412 are released from the mold 480, and as shown in FIG. 14(C), a wafer-level lens having a patterned light-shielding film 414 on the substrate 410 is obtained.

如上所述,晶圓級透鏡所具備的圖案狀的遮光膜414不僅是如圖11所示設置於除透鏡412的透鏡面412a以外的區域的構成,如圖14(C)所示,亦可為將遮光膜414設置於除透鏡412 的透鏡開口414a以外的區域的構成。 As described above, the pattern-shaped light-shielding film 414 provided in the wafer-level lens is not only provided in a region other than the lens surface 412a of the lens 412 as shown in FIG. 11, but also as shown in FIG. 14(C). In order to dispose the light shielding film 414 in the lens 412 The configuration of the region other than the lens opening 414a.

晶圓級透鏡藉由在基板410的至少一個表面形成為圖案狀的光反射率低的遮光膜414,而於透鏡412的透鏡面412a或透鏡開口414a以外的區域充分地遮光,並可抑制反射光的產生。因此,當應用於具備固體攝像元件的攝像模組中時,可防止攝像時伴隨反射光的重影(ghost)或眩光(flare)等不良情況的產生。 The wafer-level lens is sufficiently shielded from the lens surface 412a of the lens 412 or a region other than the lens opening 414a by forming a light-shielding film 414 having a low light reflectance in a pattern on at least one surface of the substrate 410, and suppresses reflection. The generation of light. Therefore, when applied to an image pickup module including a solid-state image sensor, it is possible to prevent occurrence of problems such as ghost or flare of the reflected light during image pickup.

另外,由於將遮光膜414設置於基板的表面,因此於晶圓級透鏡中無需安裝其他遮光構件等,可抑制製造成本的增加。 Further, since the light shielding film 414 is provided on the surface of the substrate, it is not necessary to mount another light shielding member or the like in the wafer level lens, and an increase in manufacturing cost can be suppressed.

再者,於將表面凹凸的構造物設置在透鏡的周圍的構成的情況下,擔憂因射入至該構造物中的光反射或發散,而容易產生重影等不良情況。因此,若為如圖11所示般於除透鏡412的透鏡面412a以外的區域設置有經圖案化的遮光膜414的構成,則可於透鏡面412a以外遮蔽光,而可改善光學性能。 In the case where the structure having the surface unevenness is provided around the lens, it is feared that light reflected or diffused into the structure is likely to cause problems such as ghosting. Therefore, if the patterned light-shielding film 414 is provided in a region other than the lens surface 412a of the lens 412 as shown in FIG. 11, the light can be shielded outside the lens surface 412a, and the optical performance can be improved.

實施例 Example

以下,藉由實施例來更具體地說明本發明,但本發明只要不超出其主旨,則並不限定於以下的實施例。再者,只要事先無特別說明,則「份」及「%」為質量基準。 Hereinafter, the present invention will be more specifically described by the examples, but the present invention is not limited to the following examples as long as the scope of the invention is not exceeded. In addition, "parts" and "%" are quality standards unless otherwise specified.

<填料分散液1的製備> <Preparation of Filler Dispersion 1>

事先將二氧化矽填料(日本艾羅西爾(Aerosil)(股份)製造,Aerosil 50粒子尺寸為30nm)6.8質量份、鹼可溶性樹脂(ACA230AA,大賽璐氰特(Daicel-Cytec)(股份),重量平均分子量為14000(藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC)所得的聚苯乙烯換算值),固體成分為50質量%,溶劑:丙二醇單甲醚乙酸酯(PGME))92.9質量份、以及三聚氰胺0.3質量份混合後,藉由馬達磨機(motor mill)M-50(艾格爾(Eiger)公司製造),並使用直徑為1.0mm的氧化鋯珠,以9m/s的圓周速度分散1.5小時。使用日本頗爾製造的Profile Star(聚丙烯過濾精度為1.5μm)進行過濾,而製成填料分散液1。 In advance, cerium oxide filler (manufactured by Aerosil (Japan), Aerosil 50 particle size: 30 nm) 6.8 parts by mass, alkali-soluble resin (ACA230AA, Daicel-Cytec (share), Weight average molecular weight is 14,000 (by gel permeation chromatography (Gel Permeation) Chromatography (GPC) obtained by polystyrene conversion), solid content: 50% by mass, solvent: propylene glycol monomethyl ether acetate (PGME)) 92.9 parts by mass, and melamine 0.3 parts by mass after mixing, by motor mill (motor mill) M-50 (manufactured by Eiger), and zirconia beads having a diameter of 1.0 mm were used, and dispersed at a peripheral speed of 9 m/s for 1.5 hours. The filler dispersion 1 was prepared by filtration using a Profile Star (polypropylene filtration precision: 1.5 μm) manufactured by Pall, Japan.

<阻焊劑組成物的製備> <Preparation of solder resist composition>

(實施例1) (Example 1)

將下述組成混合,使用日本頗爾製造的HDCII(高密度聚丙烯過濾精度為6.0μm)實施過濾,而獲得實施例1的組成物。實施例1的組成物的固體成分濃度為47質量%。黏度為300mPa.s。 The following composition was mixed, and filtration was carried out using HDCII (high-density polypropylene filtration precision: 6.0 μm) manufactured by Pall Japan, and the composition of Example 1 was obtained. The solid content concentration of the composition of Example 1 was 47% by mass. The viscosity is 300mPa. s.

.紅外線遮光性粒子YMF-02(住友金屬礦山(股份)製造 銫鎢氧化物(Cs0.33WO3,表示粒子尺寸分布中的極大值的粒子尺寸:20nm)的18.5質量%分散液) 19.13質量份 . Infrared opaque particle YMF-02 (a 18.5 mass% dispersion of 铯tungsten oxide (Cs 0.33 WO 3 , particle size of the maximum value in particle size distribution: 20 nm) manufactured by Sumitomo Metal Mine Co., Ltd.) 19.13 parts by mass

.聚合性化合物 化合物D:二甘油EO改質(甲基)丙烯酸酯(東亞合成公司製造,M-460) 4.63質量份 . Polymerizable compound Compound D: diglycerin EO modified (meth) acrylate (manufactured by Toagosei Co., Ltd., M-460) 4.63 parts by mass

.聚合起始劑α-胺基酮系聚合起始劑(化合物A)、IRGACURE 369(巴斯夫公司製造) 1.10質量份 . Polymerization initiator α-amino ketone polymerization initiator (Compound A), IRGACURE 369 (manufactured by BASF Corporation) 1.10 parts by mass

.增感劑Kayacure DETX-S(日本化藥公司製造的硫雜蒽酮系化合物) 0.38質量份 . Sensitizer Kayacure DETX-S (thiaxanthone compound manufactured by Nippon Kayaku Co., Ltd.) 0.38 parts by mass

.紫外線吸收劑DPO(富士膠片精細化學製造) 0.07質量份 . UV absorber DPO (manufactured by Fujifilm Fine Chemicals) 0.07 parts by mass

.矽烷偶合劑KBM-503(信越化學工業公司製造) 2.10質量份 . Decane coupling agent KBM-503 (manufactured by Shin-Etsu Chemical Co., Ltd.) 2.10 parts by mass

.界面活性劑Megafac F-780(迪愛生股份有限公司製造) 0.10質量份 . Surfactant Megafac F-780 (manufactured by Di Ai Sheng Co., Ltd.) 0.10 parts by mass

.上述填料分散液1 58.39質量份 . The above filler dispersion 1 58.39 parts by mass

.溶劑PGMEA 14.10質量份 . Solvent PGMEA 14.10 parts by mass

(實施例2~實施例3) (Example 2 to Example 3)

除將光聚合起始劑(化合物A)替換成上述化合物B、化合物C以外,設為與實施例1相同的組成,藉此分別獲得實施例2、實施例3的組成物。實施例2、實施例3的組成物的固體成分濃度分別為47質量%。實施例2的組成物的黏度為200mPa.s,實施例3的組成物的黏度為200mPa.s。 The composition of Example 2 and Example 3 was obtained by the same composition as that of Example 1 except that the photopolymerization initiator (Compound A) was replaced with the above-mentioned Compound B and Compound C. The solid content concentrations of the compositions of Example 2 and Example 3 were respectively 47% by mass. The composition of Example 2 has a viscosity of 200 mPa. s, the composition of Example 3 has a viscosity of 200 mPa. s.

化合物B肟系聚合起始劑,IRGACURE OXE01(巴斯夫公司製造) Compound B lanthanide polymerization initiator, IRGACURE OXE01 (manufactured by BASF Corporation)

化合物C三嗪系聚合起始劑(根據公知的方法合成) Compound C triazine polymerization initiator (synthesized according to a known method)

(比較例1~比較例4) (Comparative Example 1 to Comparative Example 4)

除將實施例1的化合物D分別替換成化合物E~化合物 H以外,設為與實施例1相同的組成,藉此獲得比較例1~比較例4的組成物。比較例1~比較例4的組成物的固體成分濃度分別為47質量%。 In addition to replacing compound D of Example 1 with compound E~ compound Other than H, the composition of Comparative Example 1 to Comparative Example 4 was obtained by setting the same composition as in Example 1. The solid content concentrations of the compositions of Comparative Examples 1 to 4 were 47% by mass.

化合物E二季戊四醇六丙烯酸酯(根據公知的方法合成) Compound E dipentaerythritol hexaacrylate (synthesized according to a known method)

化合物F日本化藥製造,KAYARAD DPHA(二季戊四醇五丙烯酸酯及二季戊四醇六丙烯酸酯的混合物) Compound F manufactured by Nippon Kayaku, KAYARAD DPHA (a mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate)

化合物G日本化藥製造,KAYARAD PR-1040 Compound G manufactured by Nippon Kayaku, KAYARAD PR-1040

化合物H新中村化學製造A-DPH-12E(EO改質二季戊四醇六丙烯酸酯) Compound H Xinzhongcun Chemical Manufacturing A-DPH-12E (EO modified dipentaerythritol hexaacrylate)

(比較例5) (Comparative Example 5)

將實施例1的紅外線遮光性粒子(YMF-02)替換成下述碳黑分散液H,將投入量自19.13質量份變更成30.27質量份,將溶劑(PGMEA)投入量自14.10質量份替換成2.96質量份,除此以外,設為與實施例1相同的組成,藉此獲得比較例5的組成物。比較例5的組成物的固體成分濃度為47質量%。 The infrared light-shielding particle (YMF-02) of Example 1 was replaced with the following carbon black dispersion liquid H, and the input amount was changed from 19.13 parts by mass to 30.27 parts by mass, and the solvent (PGMEA) input amount was replaced with 14.10 parts by mass. The composition of Comparative Example 5 was obtained by the same composition as in Example 1 except that the composition was the same as that of the above. The solid content concentration of the composition of Comparative Example 5 was 47% by mass.

(碳黑分散液H的製備) (Preparation of carbon black dispersion H)

利用雙輥研磨機對下述組成I實施高黏度分散處理,而獲得分散物。其後,向該分散物中添加下述組成II的混合物,使用均質機於3000rpm的條件下攪拌3小時。藉由使用粒子尺寸為0.3mm的氧化鋯珠的分散機(商品名:高速分散機(Dispermat),格茨曼(GETZMANN)公司製造),對所獲得的混合溶液實施4 小時微分散處理,而製成碳黑分散液(固體成分濃度為18.0質量%)。 The following composition I was subjected to a high viscosity dispersion treatment using a two-roll mill to obtain a dispersion. Thereafter, a mixture of the following composition II was added to the dispersion, and the mixture was stirred at 3000 rpm for 3 hours using a homogenizer. The obtained mixed solution was carried out by using a dispersing machine of zirconia beads having a particle size of 0.3 mm (trade name: Dispermat, manufactured by GETZMANN). The carbon black dispersion (solid content concentration: 18.0% by mass) was prepared by microdispersion treatment in an hour.

(組成I) (composition I)

.表示粒子尺寸分布中的極大值的粒子尺寸為15nm的碳黑(顏料黑(Pigment Black)7) 23質量份 . Carbon black (Pigment Black 7) having a particle size of 15 nm indicating a maximum value in the particle size distribution 23 parts by mass

.甲基丙烯酸苄酯/甲基丙烯酸共聚物的PGMEA的45質量%溶液(甲基丙烯酸苄酯/甲基丙烯酸的共聚比=67/33(mol%),Mw:28000) 22質量份 . 45 mass% solution of PGMEA of benzyl methacrylate/methacrylic acid copolymer (copolymerization ratio of benzyl methacrylate/methacrylic acid=67/33 (mol%), Mw: 28000) 22 parts by mass

.Solsperse5000(日本路博潤(股份)製造) 1.2質量份 . Solsperse5000 (made by Lubrizol, Ltd.) 1.2 parts by mass

(組成II) (composition II)

.甲基丙烯酸苄酯/甲基丙烯酸共聚物的PGMEA的45質量%溶液(甲基丙烯酸苄酯單元/甲基丙烯酸單元=67/33(mol%),Mw:28000) 22質量份 . 45 mass% solution of PGMEA of benzyl methacrylate/methacrylic acid copolymer (benzyl methacrylate unit / methacrylic acid unit = 67/33 (mol%), Mw: 28000) 22 parts by mass

.PGMEA 176質量份 . PGMEA 176 parts by mass

<阻焊劑組成物的評價> <Evaluation of solder resist composition>

(紅外線遮光性) (infrared opacity)

於上述條件下將組成物旋塗於玻璃基板上而形成膜厚為25μm的感光層(阻焊劑組成物層)的塗膜,使用紫外可見近紅外分光光度計UV3600(島津製作所製造),測定塗膜的波長1200nm的透過率。透過率越低,紅外線遮蔽性越優異。根據下述評價基準進行評價。 The composition was spin-coated on a glass substrate under the above conditions to form a coating film of a photosensitive layer (solder resist composition layer) having a film thickness of 25 μm, and the coating was measured using an ultraviolet-visible near-infrared spectrophotometer UV 3600 (manufactured by Shimadzu Corporation). The transmittance of the film at a wavelength of 1200 nm. The lower the transmittance, the more excellent the infrared shielding property. The evaluation was performed based on the following evaluation criteria.

[評價基準] [evaluation benchmark]

5:透過率為2%以下。 5: The transmittance is 2% or less.

4:透過率大於2%且為3%以下。 4: The transmittance is greater than 2% and is 3% or less.

3:透過率大於3%且為5%以下。 3: The transmittance is more than 3% and less than 5%.

2:透過率大於5%且為10%以下。 2: The transmittance is more than 5% and less than 10%.

1:透過率大於10%。 1: The transmission rate is greater than 10%.

(經時殘渣) (time residue)

將所獲得的各紅外線組成物於冷藏(4℃)下保管6個月,然後利用旋塗法,以膜厚變成25μm的方式將各紅外線組成物分別塗佈於矽晶圓上,其後,於加熱板上以120℃加熱2分鐘而獲得感光層。 Each of the obtained infrared ray compositions was stored in a refrigerator (4° C.) for 6 months, and then each of the infrared ray compositions was applied to a ruthenium wafer by a spin coating method so that the film thickness became 25 μm. Thereafter, The photosensitive layer was obtained by heating at 120 ° C for 2 minutes on a hot plate.

繼而,使用i射線步進機,隔著具有直徑為300μm的圖案的光罩,使曝光量50mJ/cm2~2000mJ/cm2的範圍的曝光量每次變化50mJ/cm2來對所獲得的感光層進行照射。 Then, using an i-ray stepper, the exposure amount in the range of 50 mJ/cm 2 to 2000 mJ/cm 2 was changed by 50 mJ/cm 2 each time through a photomask having a pattern having a diameter of 300 μm. The photosensitive layer is irradiated.

使用氫氧化四甲基銨2.38質量%水溶液,於25℃下對上述曝光後的感光層進行40秒覆液(puddle)式顯影。其後,藉由旋轉噴淋來進行淋洗,進而利用純水進行水洗,而獲得紅外線遮蔽性的阻焊劑圖案。利用掃描型電子顯微鏡觀察實施了60秒顯影步驟時所獲得的直徑為300μm的圓的圖案內部,並根據評價基準進行評價,藉由如下的評價基準,以5~1的5階段評價進行分級。等級3以上為實用水準。 The exposed photosensitive layer was subjected to puddle development for 40 seconds at 25 ° C using a tetramethylammonium hydroxide 2.38 mass% aqueous solution. Thereafter, it was rinsed by spin spraying, and further washed with pure water to obtain an infrared shielding resist pattern. The inside of the pattern of a circle having a diameter of 300 μm obtained when the development step was performed for 60 seconds was observed with a scanning electron microscope, and evaluated according to the evaluation criteria, and classified by a five-stage evaluation of 5 to 1 by the following evaluation criteria. Level 3 or above is a practical level.

[評價基準] [evaluation benchmark]

5:於矽基板表面未看到粗糙,完全未看到殘渣的水準。 5: No roughness was observed on the surface of the substrate, and the level of the residue was not observed at all.

4:於矽基板表面未看到粗糙,大致未看到殘渣的水準。 4: No roughness was observed on the surface of the substrate, and the level of the residue was not substantially observed.

3:於矽基板表面略微看到粗糙,但殘渣為容許內的水準。 3: The roughness was slightly observed on the surface of the substrate, but the residue was within the allowable level.

2:於矽基板表面的大部分看到粗糙,不合格水準。 2: Most of the surface of the substrate is rough and unqualified.

1:於整個矽基板表面看到大的粗糙,顯影不完全,不合格水準。 1: Large roughness was observed on the surface of the entire ruthenium substrate, development was incomplete, and the level of failure was unacceptable.

(經時曝光感光度) (Time-lapse exposure sensitivity)

將所獲得的各組成物於冷藏(4℃)下保管6個月,然後利用旋塗法,以膜厚變成25μm的方式將各組成物分別塗佈於矽晶圓上,其後,於加熱板上以120℃加熱2分鐘而獲得感光層。 Each of the obtained compositions was stored in a refrigerator (4 ° C) for 6 months, and then each composition was applied to a tantalum wafer by a spin coating method so that the film thickness became 25 μm, and then heated. The plate was heated at 120 ° C for 2 minutes to obtain a photosensitive layer.

繼而,使用i射線步進機,隔著具有直徑為300μm的圖案的光罩,使曝光量50mJ/cm2~2000mJ/cm2的範圍的曝光量每次變化50mJ/cm2來對所獲得的感光層進行照射。 Then, using an i-ray stepper, the exposure amount in the range of 50 mJ/cm 2 to 2000 mJ/cm 2 was changed by 50 mJ/cm 2 each time through a photomask having a pattern having a diameter of 300 μm. The photosensitive layer is irradiated.

使用氫氧化四甲基銨2.38質量%水溶液,於25℃下對上述曝光後的感光層進行40秒覆液式顯影。其後,藉由旋轉噴淋來進行淋洗,進而利用純水進行水洗,而獲得紅外線遮蔽性的阻焊劑圖案。測定實施了60秒顯影步驟時獲得直徑為300μm的圓的圖案的最低曝光量(曝光感光度)(mJ/cm2)。 The exposed photosensitive layer was subjected to a liquid-contact development method at 25 ° C for 40 seconds using a tetramethylammonium hydroxide 2.38 mass% aqueous solution. Thereafter, it was rinsed by spin spraying, and further washed with pure water to obtain an infrared shielding resist pattern. The minimum exposure amount (exposure sensitivity) (mJ/cm 2 ) of a pattern of a circle having a diameter of 300 μm was obtained when the development step of 60 seconds was performed.

數值越小,圖案曝光感光度越良好,根據下述評價基準進行評價。 The smaller the value, the better the pattern exposure sensitivity, and the evaluation was performed according to the following evaluation criteria.

[評價基準] [evaluation benchmark]

5:最低曝光量為200mJ/cm2以下。 5: The minimum exposure amount is 200 mJ/cm 2 or less.

4:最低曝光量大於200mJ/cm2且為250mJ/cm2以下。 4: The minimum exposure amount is more than 200 mJ/cm 2 and is 250 mJ/cm 2 or less.

3:最低曝光量大於250mJ/cm2且為300mJ/cm2以下。 3: The minimum exposure amount is more than 250 mJ/cm 2 and is 300 mJ/cm 2 or less.

2:最低曝光量大於300mJ/cm2且為350mJ/cm2以下。 2: The minimum exposure amount is more than 300 mJ/cm 2 and is 350 mJ/cm 2 or less.

1:最低曝光量大於350mJ/cm21: The minimum exposure is greater than 350mJ/cm 2 .

(經時塗佈均勻性) (time uniformity of coating)

將各紅外線組成物於冷藏(4℃)下保管6個月,然後於矽晶圓上,利用旋塗法以900rpm的轉速進行25秒塗佈,於加熱板上,以120℃對所獲得的矽晶圓進行2分鐘加熱。 Each of the infrared ray compositions was stored in a refrigerator (4 ° C) for 6 months, and then coated on a ruthenium wafer by spin coating at 900 rpm for 25 seconds, and obtained on a hot plate at 120 ° C. The wafer was heated for 2 minutes.

以目視評價上述所獲得的塗佈膜的塗佈均勻性,藉由如下的評價基準,以5~1的5階段評價進行分級。等級3以上為實用水準。 The coating uniformity of the coating film obtained above was visually evaluated, and the classification was performed by a five-stage evaluation of 5 to 1 by the following evaluation criteria. Level 3 or above is a practical level.

[評價基準] [evaluation benchmark]

5:於表面未看到粗糙,塗佈面狀無問題的水準。 5: No roughness was observed on the surface, and the level of the coated surface was no problem.

4:於表面幾乎未看到粗糙,塗佈面狀大致無問題的水準。 4: The surface was hardly seen to be rough, and the coated surface was substantially level.

3:於表面的一部分看到粗糙,塗佈面狀略差,但為容許內的水準。 3: A part of the surface is rough, and the coated surface is slightly inferior, but it is within the allowable level.

2:於表面的大部分看到粗糙,塗佈面狀差,不合格水準。 2: Most of the surface is rough, and the coated surface is poor, and the level of failure is unqualified.

1:於整個表面看到粗糙,塗佈面狀相當差,不合格水準。 1: Roughness was observed on the entire surface, and the coated surface was quite poor, which was unqualified.

如根據上述表而明確般,可知當使用含有由通式(1)所表示的化合物與紅外線遮光性粒子的組成物時(實施例1~實施例3),紅外線遮光性得以維持、且對於經時變化的適應性變得優異。相對於此,可知當使用利用如化合物E~化合物H般結構與本發明中所使用的化合物D近似的化合物的組成物時(比較例1~比較例4),雖然紅外線遮光性得以維持,但經時變化顯著,經時後的組成物存在殘渣掉落的傾向、或者產生感光度欠佳或塗佈性欠佳等問題。 As is clear from the above table, it is understood that when a composition containing the compound represented by the formula (1) and the infrared light-blocking particles is used (Examples 1 to 3), the infrared ray opacity is maintained, and The adaptability of the time change becomes excellent. On the other hand, when the composition of the compound similar to the compound D used in the present invention, such as the compound E to the compound H, was used (Comparative Example 1 to Comparative Example 4), although the infrared ray blocking property was maintained, The change over time is remarkable, and the composition after the lapse tends to have a residue falling, or a problem of poor sensitivity or poor coatability.

10‧‧‧矽基板 10‧‧‧矽 substrate

12‧‧‧攝像元件 12‧‧‧Photographic components

13‧‧‧層間絕緣膜 13‧‧‧Interlayer insulating film

14‧‧‧基極層 14‧‧‧ base layer

15R‧‧‧紅色的彩色濾光片 15R‧‧‧Red color filter

15G‧‧‧綠色的彩色濾光片 15G‧‧‧Green color filter

15B‧‧‧藍色的彩色濾光片 15B‧‧‧Blue color filter

16‧‧‧保護層 16‧‧‧Protective layer

17‧‧‧微透鏡 17‧‧‧Microlens

18‧‧‧遮光膜 18‧‧‧Shade film

20‧‧‧黏著劑 20‧‧‧Adhesive

22‧‧‧絕緣膜 22‧‧‧Insulation film

23‧‧‧金屬電極 23‧‧‧Metal electrodes

24‧‧‧阻焊劑層 24‧‧‧ solder resist layer

26‧‧‧內部電極 26‧‧‧Internal electrodes

27‧‧‧元件面電極 27‧‧‧Component surface electrode

30‧‧‧玻璃基板 30‧‧‧ glass substrate

60‧‧‧焊料球 60‧‧‧ solder balls

70‧‧‧電路基板 70‧‧‧ circuit board

100‧‧‧固體攝像元件基板 100‧‧‧Solid imaging element substrate

Claims (18)

一種阻焊劑組成物,其包括由通式(1)所表示的化合物及紅外線遮光性粒子: 通式(1)中,L分別為包含伸烷基與-O-的組合的基,Ac分別為(甲基)丙烯醯氧基。 A solder resist composition comprising a compound represented by the general formula (1) and infrared light-shielding particles: In the formula (1), L is a group each containing a combination of an alkylene group and -O-, and each of Ac is a (meth)acryloxy group. 如申請專利範圍第1項所述的阻焊劑組成物,其中於通式(1)中,L為包含-C2H4-與-O-的組合的基。 The solder resist composition according to claim 1, wherein in the formula (1), L is a group comprising a combination of -C 2 H 4 - and -O-. 如申請專利範圍第1項所述的阻焊劑組成物,其中於通式(1)中,L為包含-CH2-與-O-的組合的基。 The solder resist composition according to claim 1, wherein in the formula (1), L is a group comprising a combination of -CH 2 - and -O-. 如申請專利範圍第1項或第2項所述的阻焊劑組成物,其中上述紅外線遮光性粒子包含鎢化合物。 The solder resist composition according to claim 1 or 2, wherein the infrared ray blocking particles comprise a tungsten compound. 如申請專利範圍第1項或第2項所述的阻焊劑組成物,其中上述紅外線遮光性粒子由下述通式(2)表示:MxWyOz…(2)M表示金屬,W表示鎢,O表示氧;0.001≦x/y≦1.1;2.2≦z/y≦3.0。 The solder resist composition according to claim 1 or 2, wherein the infrared ray blocking particles are represented by the following general formula (2): M x W y O z (2) M represents a metal, W Indicates tungsten, O represents oxygen; 0.001 ≦ x / y ≦ 1.1; 2.2 ≦ z / y ≦ 3.0. 如申請專利範圍第5項所述的阻焊劑組成物,其中於通式(2)中,M為鹼金屬。 The solder resist composition according to claim 5, wherein in the formula (2), M is an alkali metal. 如申請專利範圍第5項所述的阻焊劑組成物,其中於通式(2)中,M為銫。 The solder resist composition according to claim 5, wherein in the formula (2), M is ruthenium. 如申請專利範圍第1項或第2項所述的阻焊劑組成物,其中更包括聚合起始劑及/或鹼可溶性黏合劑。 The solder resist composition according to claim 1 or 2, further comprising a polymerization initiator and/or an alkali-soluble binder. 如申請專利範圍第8項所述的阻焊劑組成物,其中更包括α-胺基酮系聚合起始劑。 The solder resist composition according to claim 8, which further comprises an α-amino ketone polymerization initiator. 如申請專利範圍第1項或第2項所述的阻焊劑組成物,其中固體成分濃度為30質量%~80質量%。 The solder resist composition according to claim 1 or 2, wherein the solid content concentration is 30% by mass to 80% by mass. 一種硬化膜,其是使如申請專利範圍第1項至第10項中任一項所述的阻焊劑組成物硬化而形成。 A cured film formed by curing a solder resist composition according to any one of claims 1 to 10. 一種固體攝像元件,其包括如申請專利範圍第11項所述的硬化膜。 A solid-state imaging element comprising the cured film according to claim 11 of the patent application. 一種液晶顯示裝置,其包括如申請專利範圍第11項所述的硬化膜。 A liquid crystal display device comprising the cured film according to claim 11 of the patent application. 一種有機EL顯示裝置,其包括如申請專利範圍第11項所述的硬化膜。 An organic EL display device comprising the cured film according to claim 11 of the patent application. 一種圖案硬化膜的製造方法,其包括:將如申請專利範圍第1項至第10項中任一項所述的阻焊劑組成物應用於基板上的步驟;以及對上述阻焊劑組成物進行圖案曝光的步驟。 A method of producing a pattern hardening film, comprising: applying a solder resist composition according to any one of claims 1 to 10 to a substrate; and patterning the solder resist composition The steps of exposure. 一種固體攝像元件的製造方法,其包括:將如申請專利範 圍第1項至第10項中任一項所述的阻焊劑組成物應用於基板上的步驟;以及對上述阻焊劑組成物進行曝光的步驟。 A method of manufacturing a solid-state imaging device, comprising: The step of applying the solder resist composition according to any one of items 1 to 10 to a substrate; and exposing the solder resist composition to the above. 一種液晶顯示裝置的製造方法,其包括:將如申請專利範圍第1項至第10項中任一項所述的阻焊劑組成物應用於基板上的步驟;以及對上述阻焊劑組成物進行曝光的步驟。 A method of manufacturing a liquid crystal display device, comprising: applying a solder resist composition according to any one of claims 1 to 10 to a substrate; and exposing the solder resist composition A step of. 一種有機電致發光顯示裝置的製造方法,其包括:將如申請專利範圍第1項至第10項中任一項所述的阻焊劑組成物應用於基板上的步驟;以及對上述阻焊劑組成物進行曝光的步驟。 A method of manufacturing an organic electroluminescence display device, comprising: applying a solder resist composition according to any one of claims 1 to 10 to a substrate; and forming the solder resist The step of exposing the object.
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