TWI572506B - Apparatus with load dump protection - Google Patents

Apparatus with load dump protection Download PDF

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TWI572506B
TWI572506B TW105114521A TW105114521A TWI572506B TW I572506 B TWI572506 B TW I572506B TW 105114521 A TW105114521 A TW 105114521A TW 105114521 A TW105114521 A TW 105114521A TW I572506 B TWI572506 B TW I572506B
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transistor
voltage
power supply
supply voltage
electronic device
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TW105114521A
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TW201739646A (en
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曹斯鈞
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晶豪科技股份有限公司
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具有負載突降保護的電子裝置 Electronic device with load dump protection

本發明係關於一種具有負載突降保護(Load Dump Protection)的電子裝置。 The present invention relates to an electronic device having Load Dump Protection.

車用電子系統在遇到異常狀況(例如負載突降、突波(surge)或切換狀態的暫態電壓)時,供電端電壓有時候在短時間內會有不正常的陡升或陡降狀況。舉例而言,當負載突降發生時,高達100V的電壓會施加至車用電子系統的元件中,為了保護元件因車用電源暫態變化產生永久性的損害,有必要提供一保護電路。 When an automotive electronic system encounters an abnormal condition (such as a load dump, a surge, or a transient voltage in a switching state), the voltage at the power supply terminal may sometimes be abnormally steep or steep in a short period of time. . For example, when a load dump occurs, a voltage of up to 100V is applied to the components of the automotive electronics system. To protect the components from permanent damage due to transient changes in the vehicle's power supply, it is necessary to provide a protection circuit.

根據本發明一實施例之一種電子裝置,該電子裝置具有負載突降保護,且用以驅動一第一輸出節點和一第二輸出節點之間的一負載。該電子裝置包含一第一半橋式輸出級,一第二半橋式輸出級,一第一電壓比較器,一第二電壓比較器,一第一箝位電路以及一第二箝位電路。該第一半橋式輸出級具有一第一電晶體和一第二電晶體,其中該第一電晶體和該第二電晶體以串聯方式連接於一電源電壓和一基準電壓之間,且該第一半橋式輸出級具有位於該第一電晶體和 該第二電晶體之間的該第一輸出節點。該第二半橋式輸出級具有一第三電晶體和一第四電晶體,其中該第三電晶體和該第四電晶體以串聯方式連接於該電源電壓和該基準電壓之間,且該第二半橋式輸出級具有位於該第三電晶體和該第四電晶體之間的該第二輸出節點。該第一電壓比較器用以比較該電源電壓和一第一設定電壓,藉以在該電源電壓大於該第一設定電壓時產生一第一比較信號。該第二電壓比較器用以比較該電源電壓和一第二設定電壓,藉以在該電源電壓大於該第二設定電壓時產生一第二比較信號。該第一箝位電路用以對該電源電壓進行分壓動作以根據該第二比較信號在該第一輸出節點產生一第一分壓電壓。該第二箝位電路用以對該電源電壓進行分壓動作以根據該第二比較信號在該第二輸出節點產生一第二分壓電壓。該第二設定電壓大於該第一設定電壓。該第一電晶體、該第二電晶體、該第三電晶體和該第四電晶體根據該第一比較信號而不導通。 According to an embodiment of the invention, an electronic device has load dump protection and is used to drive a load between a first output node and a second output node. The electronic device comprises a first half bridge output stage, a second half bridge output stage, a first voltage comparator, a second voltage comparator, a first clamping circuit and a second clamping circuit. The first half bridge output stage has a first transistor and a second transistor, wherein the first transistor and the second transistor are connected in series between a power voltage and a reference voltage, and the a first half bridge output stage having the first transistor and The first output node between the second transistors. The second half bridge output stage has a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are connected in series between the power voltage and the reference voltage, and the The second half bridge output stage has the second output node between the third transistor and the fourth transistor. The first voltage comparator is configured to compare the power voltage with a first set voltage, thereby generating a first comparison signal when the power voltage is greater than the first set voltage. The second voltage comparator is configured to compare the power voltage and a second set voltage, thereby generating a second comparison signal when the power voltage is greater than the second set voltage. The first clamping circuit is configured to perform a voltage dividing operation on the power supply voltage to generate a first divided voltage at the first output node according to the second comparison signal. The second clamping circuit is configured to perform a voltage dividing operation on the power supply voltage to generate a second divided voltage at the second output node according to the second comparison signal. The second set voltage is greater than the first set voltage. The first transistor, the second transistor, the third transistor, and the fourth transistor are not turned on according to the first comparison signal.

100,400‧‧‧電子裝置 100,400‧‧‧Electronic devices

11,11’‧‧‧驅動電路 11,11'‧‧‧ drive circuit

12,12’‧‧‧負載 12,12’‧‧‧load

14,14’‧‧‧半橋式輸出級 14,14'‧‧‧Half-bridge output stage

15,15’‧‧‧半橋式輸出級 15,15'‧‧‧Half-bridge output stage

16,16’‧‧‧箝位電路 16,16'‧‧‧Clamp circuit

18,18’‧‧‧箝位電路 18,18’‧‧‧Clamp circuit

20,20’‧‧‧電壓比較器 20,20’‧‧‧Voltage comparator

22,22’‧‧‧電壓比較器 22,22’‧‧‧Voltage comparator

42‧‧‧升壓電路 42‧‧‧Boost circuit

C1~C4‧‧‧電容 C1~C4‧‧‧ capacitor

M1~M10‧‧‧電晶體 M1~M10‧‧‧O crystal

M1’~M4’‧‧‧電晶體 M1’~M4’‧‧•O crystal

R1~R4‧‧‧電阻 R1~R4‧‧‧ resistor

第一圖顯示結合本發明一實施例之一電子裝置之方塊示意圖。 The first figure shows a block diagram of an electronic device incorporating an embodiment of the present invention.

第二圖顯示結合本發明一實施例之該箝位電路之電路圖。 The second figure shows a circuit diagram of the clamp circuit incorporating an embodiment of the present invention.

第三圖顯示結合本發明另一實施例之該箝位電路之電路圖。 The third figure shows a circuit diagram of the clamp circuit incorporating another embodiment of the present invention.

第四圖顯示結合本發明另一實施例之一電子裝置之方塊示意圖。 The fourth figure shows a block diagram of an electronic device incorporating another embodiment of the present invention.

在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,製造商可能會用不同的名詞來稱呼同樣的元件。本說明書及後續的申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及後續的請求項當中所提及的「包含」或「包括」係為一開放式的用語,故應解釋成「包含但不限定於」。另外,「耦接」一詞在此係包含任何直接及間接的電氣連接手段。因此,若文中描述一第一裝置耦接於一第二裝置,則代表該第一裝置可直接電氣連接於該第二裝置,或透過其他裝置或連接手段間接地電氣連接至該第二裝置。 Certain terms are used throughout the description and following claims to refer to particular elements. It should be understood by those of ordinary skill in the art that manufacturers may refer to the same elements by different nouns. The scope of this specification and the subsequent patent application do not use the difference of the names as the means for distinguishing the elements, but the difference in function of the elements as the criterion for distinguishing. The term "including" or "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to". In addition, the term "coupled" is used herein to include any direct and indirect electrical connection. Therefore, if a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device or indirectly electrically connected to the second device through other devices or connection means.

第一圖顯示結合本發明一實施例之一電子裝置100之方塊示意圖。參照第一圖,該電子裝置100包含一D類放大器以驅動一負載12。D類放大器在消費性產品、車用和手持性應用中常作為喇叭驅動器。第一圖中的D類放大器具有一H型橋式(H-bridge)輸出級。該H型橋式輸出級由兩個半橋式(half bridge)輸出級14和15所組成。該半橋式輸出級14具有一上橋電晶體M1和一下橋電晶體M2,其中該上橋電晶體M1和該下橋電晶體M2以串聯方式連接於一電源電壓VDD和一基準 電壓GND之間。該半橋式輸出級15具有一上橋電晶體M3和一下橋電晶體M4,其中該上橋電晶體M3和該下橋電晶體M4以串聯方式連接於該電源電壓VDD和該基準電壓GND之間。該半橋式輸出級14具有一非反相輸出端OUTP,而該半橋式輸出級15具有一反相輸出端OUTN。 The first figure shows a block diagram of an electronic device 100 in accordance with an embodiment of the present invention. Referring to the first figure, the electronic device 100 includes a class D amplifier to drive a load 12. Class D amplifiers are often used as speaker drivers in consumer, automotive, and handheld applications. The Class D amplifier in the first figure has an H-bridge output stage. The H-bridge output stage consists of two half bridge output stages 14 and 15. The half bridge output stage 14 has an upper bridge transistor M1 and a lower bridge transistor M2, wherein the upper bridge transistor M1 and the lower bridge transistor M2 are connected in series to a power supply voltage VDD and a reference. Between voltage GND. The half bridge output stage 15 has an upper bridge transistor M3 and a lower bridge transistor M4, wherein the upper bridge transistor M3 and the lower bridge transistor M4 are connected in series to the power supply voltage VDD and the reference voltage GND between. The half bridge output stage 14 has a non-inverting output terminal OUTP, and the half bridge output stage 15 has an inverting output terminal OUTN.

該電子裝置100更包含兩箝位電路16和18,其中該兩箝位電路16和18以串聯方式連接於該電源電壓VDD和該基準電壓GND之間。該箝位電路16用以對該電源電壓VDD進行分壓動作以在該半橋式輸出級14的該非反相輸出端OUTP產生一分壓電壓。該箝位電路18用以對該電源電壓VDD進行分壓動作以在該半橋式輸出級15的該反相輸出端OUTN產生一分壓電壓。 The electronic device 100 further includes two clamp circuits 16 and 18, wherein the two clamp circuits 16 and 18 are connected in series between the power supply voltage VDD and the reference voltage GND. The clamping circuit 16 is configured to divide the power supply voltage VDD to generate a divided voltage at the non-inverting output terminal OUTP of the half-bridge output stage 14. The clamp circuit 18 is configured to divide the power supply voltage VDD to generate a divided voltage at the inverted output terminal OUTN of the half bridge output stage 15.

該電子裝置100更包含兩電壓比較器20和22。該電壓比較器20用以比較該電源電壓VDD和一設定電壓VC1以產生一比較信號CP1。該電壓比較器22用以比較該電源電壓VDD和一設定電壓VC2以產生一比較信號CP2。該比較信號CP1決定該H型橋式輸出級中的電晶體M1、M2、M3和M4是否進入截止狀態,而該比較信號CP2決定該兩箝位電路16和18是否致能。 The electronic device 100 further includes two voltage comparators 20 and 22. The voltage comparator 20 is configured to compare the power supply voltage VDD and a set voltage VC1 to generate a comparison signal CP1. The voltage comparator 22 is configured to compare the power supply voltage VDD and a set voltage VC2 to generate a comparison signal CP2. The comparison signal CP1 determines whether the transistors M1, M2, M3, and M4 in the H-bridge output stage enter an off state, and the comparison signal CP2 determines whether the two clamp circuits 16 and 18 are enabled.

在正常運作時,亦即,該電源電壓VDD低於一第一預設固定電壓(例如,22V)時,該半橋式輸出級14中的電晶體M1和該半橋式輸出級15的電晶體M4開啟而該半橋式輸出 級14的電晶體M2和該半橋式輸出級15的電晶體M3關閉,此時負載電流由負載左側流到負載右側;而當該半橋式輸出級14的電晶體M2和該半橋式輸出級15的電晶體M3開啟而該半橋式輸出級14的電晶體M1和該半橋式輸出級15的電晶體M4關閉,此時負載電流由負載右側流到負載左側。 In normal operation, that is, when the power supply voltage VDD is lower than a first predetermined fixed voltage (for example, 22V), the transistor M1 in the half-bridge output stage 14 and the power of the half-bridge output stage 15 Crystal M4 is turned on and the half bridge output The transistor M2 of the stage 14 and the transistor M3 of the half bridge output stage 15 are turned off, at which time the load current flows from the left side of the load to the right side of the load; and when the transistor M2 of the half bridge output stage 14 and the half bridge type The transistor M3 of the output stage 15 is turned on and the transistor M1 of the half-bridge output stage 14 and the transistor M4 of the half-bridge output stage 15 are turned off, at which time the load current flows from the right side of the load to the left side of the load.

當負載突降發生時,該電源電壓VDD首先在一短時間內會陡升而高於該第一預設固定電壓。當該電源電壓VDD高於該第一預設固定電壓時,該電壓比較器20產生該比較信號CP1。該比較信號CP1接著傳送至一驅動電路11以關閉該H型橋式輸出級中的電晶體M1、M2、M3和M4以保護元件。其後,如果該電源電壓VDD繼續上升而高於一第二預設固定電壓時,例如當該電源電壓VDD高於28V時,會啟動一保護機制以保護在截止狀態的電晶體M1、M2、M3和M4。 When a load dump occurs, the power supply voltage VDD first rises steeply above the first predetermined fixed voltage for a short period of time. The voltage comparator 20 generates the comparison signal CP1 when the power supply voltage VDD is higher than the first predetermined fixed voltage. The comparison signal CP1 is then passed to a drive circuit 11 to turn off the transistors M1, M2, M3 and M4 in the H-bridge output stage to protect the components. Thereafter, if the power supply voltage VDD continues to rise above a second predetermined fixed voltage, for example, when the power supply voltage VDD is higher than 28V, a protection mechanism is activated to protect the transistors M1, M2 in the off state. M3 and M4.

當該電源電壓VDD高於該第二預設固定電壓時,該電壓比較器22產生該比較信號CP2。該比較信號CP2接著傳送至該箝位電路16以限制該半橋式輸出級14的該非反相輸出端OUTP的電壓,並傳送至該箝位電路18以限制該半橋式輸出級15的該反相輸出端OUTN的電壓。第二圖顯示結合本發明一實施例之該箝位電路16和該箝位電路18之電路圖。參考第二圖,該箝位電路16包含複數個電阻R1和R2,其中該等電阻R1和R2以串聯方式透過一電晶體M5連接至該電源電壓VDD。該箝位電路18包含複數個電阻R3和R4,其中該等電阻 R3和R4以串聯方式透過一電晶體M6連接至該電源電壓VDD。 The voltage comparator 22 generates the comparison signal CP2 when the power supply voltage VDD is higher than the second predetermined fixed voltage. The comparison signal CP2 is then passed to the clamp circuit 16 to limit the voltage of the non-inverted output terminal OUTP of the half-bridge output stage 14 and to the clamp circuit 18 to limit the half-bridge output stage 15 The voltage at the inverting output terminal OUTN. The second figure shows a circuit diagram of the clamp circuit 16 and the clamp circuit 18 in conjunction with an embodiment of the present invention. Referring to the second figure, the clamp circuit 16 includes a plurality of resistors R1 and R2, wherein the resistors R1 and R2 are connected in series to the power supply voltage VDD through a transistor M5. The clamping circuit 18 includes a plurality of resistors R3 and R4, wherein the resistors R3 and R4 are connected in series to the supply voltage VDD through a transistor M6.

以下參考第一圖和第二圖說明該箝位電路16和該箝位電路18的一運作方式。當該電源電壓VDD上升至高於該第二預設固定電壓時,該等電晶體M5和M6導通。由於該電晶體M5導通時的等效電阻遠小於電阻R1和電阻R2的總阻值,該箝位電路16會根據電阻R1和R2的阻值比例產生一分壓電壓;由於該電晶體M6導通時的等效電阻遠小於電阻R3和電阻R4的總阻值,該箝位電路18會根據電阻R3和R4的阻值比例產生一分壓電壓。 An operation of the clamp circuit 16 and the clamp circuit 18 will be described below with reference to the first and second figures. When the power supply voltage VDD rises above the second predetermined fixed voltage, the transistors M5 and M6 are turned on. Since the equivalent resistance when the transistor M5 is turned on is much smaller than the total resistance of the resistor R1 and the resistor R2, the clamp circuit 16 generates a divided voltage according to the resistance ratio of the resistors R1 and R2; since the transistor M6 is turned on The equivalent resistance is much smaller than the total resistance of the resistor R3 and the resistor R4, and the clamp circuit 18 generates a divided voltage according to the resistance ratio of the resistors R3 and R4.

以下參考第一圖和第二圖說明該電子裝置100在負載突降發生時的兩階段保護方式。當該電源電壓VDD上升至高於該第一預設固定電壓(例如,22V)時,該H型橋式輸出級中的電晶體M1、M2、M3和M4截止。然而,當該電源電壓VDD繼續上升時,如此高的電源電壓會使得該等電晶體M1、M2、M3和M4的汲極至源極端電壓超過電晶體的額定汲極至源極端崩潰電壓(breakdown voltage,BVdss)。因此,該箝位電路16和該箝位電路18會啟動以限制該等電晶體M1、M2、M3和M4的汲極至源極端電壓。參考第二圖,在本發明一實施例中該等電阻R1和R2的阻值比例設定為1:1,且該等電阻R3和R4的阻值比例設定為1:1。因此,該箝位電路16對該電源電壓VDD進行除以2的分壓動作以產生一分壓電壓,藉以限制該該非反相輸出端OUTP的電壓,而該箝位電路18對該電源電壓 VDD進行除以2的分壓動作以產生一分壓電壓,藉以限制該反相輸出端OUTN的電壓。 The two-stage protection mode of the electronic device 100 when a load dump occurs is explained below with reference to the first and second figures. When the power supply voltage VDD rises above the first predetermined fixed voltage (eg, 22V), the transistors M1, M2, M3, and M4 in the H-bridge output stage are turned off. However, when the supply voltage VDD continues to rise, such a high supply voltage causes the drain-to-source extreme voltages of the transistors M1, M2, M3, and M4 to exceed the rated drain-to-source extinction voltage of the transistor (breakdown) Voltage, BVdss). Thus, the clamp circuit 16 and the clamp circuit 18 are activated to limit the drain-to-source extreme voltages of the transistors M1, M2, M3, and M4. Referring to the second figure, in an embodiment of the invention, the resistance ratios of the resistors R1 and R2 are set to 1:1, and the resistance ratios of the resistors R3 and R4 are set to 1:1. Therefore, the clamp circuit 16 divides the power supply voltage VDD by a voltage division operation of 2 to generate a divided voltage, thereby limiting the voltage of the non-inverted output terminal OUTP, and the clamp circuit 18 applies the voltage to the power supply voltage. VDD performs a divided operation of 2 to generate a divided voltage, thereby limiting the voltage of the inverted output terminal OUTN.

第二圖中例示的該箝位電路16和該箝位電路18為一電阻分壓器形式,但本發明並不以此為限。參照第三圖,該箝位電路16’和該箝位電路18’為一電容分壓器形式。當電晶體M7、電晶體M8、電晶體M9和電晶體M10導通時,該箝位電路16’根據電容C1和C2的容值比例在該半橋式輸出級14的該非反相輸出端OUTP產生一分壓電壓,而該箝位電路18’根據電容C3和C4的容值比例在該半橋式輸出級15的該反相輸出端OUTN產生一分壓電壓。因此,該等電晶體M1、M2、M3和M4的汲極至源極端電壓可藉由該箝位電路16’和該箝位電路18’而限制。此外,在截止狀態的該等電晶體M1和M2的汲極至源極端電壓可藉由電容C1和C2的容值比例進行調整,而在截止狀態的該等電晶體M3和M4的汲極至源極端電壓可藉由電容C3和C4的容值比例進行調整。 The clamp circuit 16 and the clamp circuit 18 illustrated in the second figure are in the form of a resistor divider, but the invention is not limited thereto. Referring to the third figure, the clamp circuit 16' and the clamp circuit 18' are in the form of a capacitive voltage divider. When the transistor M7, the transistor M8, the transistor M9, and the transistor M10 are turned on, the clamp circuit 16' is generated at the non-inverted output terminal OUTP of the half-bridge output stage 14 according to the capacitance ratio of the capacitors C1 and C2. A voltage is divided, and the clamp circuit 18' generates a divided voltage at the inverted output terminal OUTN of the half bridge output stage 15 according to the capacitance ratio of the capacitors C3 and C4. Therefore, the drain-to-source extreme voltages of the transistors M1, M2, M3, and M4 can be limited by the clamp circuit 16' and the clamp circuit 18'. In addition, the drain-to-source extreme voltages of the transistors M1 and M2 in the off state can be adjusted by the capacitance ratio of the capacitors C1 and C2, and the drains of the transistors M3 and M4 in the off state are The source extreme voltage can be adjusted by the ratio of the capacitance values of the capacitors C3 and C4.

參考第一圖,該H型橋式輸出級中的電晶體M1和M3為P通道電晶體,而該H型橋式輸出級中的電晶體M2和M4為N通道電晶體,但本發明並不以此為限。參照第四圖,該H型橋式輸出級中的電晶體M1’、M2’、M3’和M4’均為N通道電晶體。在本實施例中,自舉起動(bootstrap)電容(未繪出)會使用以提升該半橋式輸出級14’中的上橋電晶體M1’的閘極電壓和提升該半橋式輸出級15’中的上橋電晶體M3’的閘極電 壓。當負載突降發生時,若該電源電壓VDD上升至高於該第一預設固定電壓(例如,22V)時,該H型橋式輸出級中的電晶體M1’、M2’、M3’和M4’首先會截止。如果該電源電壓VDD持續上升至高於該第二預設固定電壓(例如,28V)時,該箝位電路16’和該箝位電路18’會啟動以限制該等電晶體M1’、M2’、M3’和M4’的汲極至源極端電壓,藉以保護該等元件避免受到永久性損害。 Referring to the first figure, the transistors M1 and M3 in the H-bridge output stage are P-channel transistors, and the transistors M2 and M4 in the H-bridge output stage are N-channel transistors, but the present invention Not limited to this. Referring to the fourth figure, the transistors M1', M2', M3' and M4' in the H-bridge output stage are all N-channel transistors. In this embodiment, a bootstrap capacitor (not shown) is used to boost the gate voltage of the upper bridge transistor M1' in the half bridge output stage 14' and boost the half bridge output stage. Gate of the upper bridge transistor M3' in 15' Pressure. When the load dump occurs, if the power supply voltage VDD rises above the first predetermined fixed voltage (eg, 22V), the transistors M1', M2', M3', and M4 in the H-bridge output stage 'First will be closed. If the power supply voltage VDD continues to rise above the second predetermined fixed voltage (eg, 28V), the clamp circuit 16' and the clamp circuit 18' are activated to limit the transistors M1', M2', The drain-to-source extreme voltages of M3' and M4' protect these components from permanent damage.

本發明之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包含各種不背離本發明之替換及修飾,並為隨後之申請專利範圍所涵蓋。 The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention is not to be construed as being limited by the scope of the invention, and

100‧‧‧電子裝置 100‧‧‧Electronic devices

11‧‧‧驅動電路 11‧‧‧Drive circuit

12‧‧‧負載 12‧‧‧ load

14‧‧‧半橋式輸出級 14‧‧‧Half-bridge output stage

15‧‧‧半橋式輸出級 15‧‧‧Half-bridge output stage

16‧‧‧箝位電路 16‧‧‧Clamp circuit

18‧‧‧箝位電路 18‧‧‧Clamp circuit

20‧‧‧電壓比較器 20‧‧‧Voltage comparator

22‧‧‧電壓比較器 22‧‧‧Voltage comparator

M1~M4‧‧‧電晶體 M1~M4‧‧‧O crystal

Claims (9)

一種電子裝置,用以驅動一第一輸出節點和一第二輸出節點之間的一負載,該電子裝置包含:一第一半橋式輸出級,具有一第一電晶體和一第二電晶體,其中該第一電晶體和該第二電晶體以串聯方式連接於一電源電壓和一基準電壓之間,且該第一半橋式輸出級具有位於該第一電晶體和該第二電晶體之間的該第一輸出節點;一第二半橋式輸出級,具有一第三電晶體和一第四電晶體,其中該第三電晶體和該第四電晶體以串聯方式連接於該電源電壓和該基準電壓之間,且該第二半橋式輸出級具有位於該第三電晶體和該第四電晶體之間的該第二輸出節點;一第一電壓比較器,用以比較該電源電壓和一第一設定電壓,藉以在該電源電壓大於該第一設定電壓時產生一第一比較信號;一第二電壓比較器,用以比較該電源電壓和一第二設定電壓,藉以在該電源電壓大於該第二設定電壓時產生一第二比較信號;一第一箝位電路用以對該電源電壓進行分壓動作以根據該第二比較信號在該第一輸出節點產生一第一分壓電壓;以及 一第二箝位電路用以對該電源電壓進行分壓動作以根據該第二比較信號在該第二輸出節點產生一第二分壓電壓;其中,該第二設定電壓大於該第一設定電壓;和其中,該第一電晶體、該第二電晶體、該第三電晶體和該第四電晶體根據該第一比較信號而不導通。 An electronic device for driving a load between a first output node and a second output node, the electronic device comprising: a first half bridge output stage having a first transistor and a second transistor The first transistor and the second transistor are connected in series between a power supply voltage and a reference voltage, and the first half bridge output stage has the first transistor and the second transistor. The first output node; a second half bridge output stage having a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are connected to the power supply in series Between the voltage and the reference voltage, and the second half-bridge output stage has the second output node between the third transistor and the fourth transistor; a first voltage comparator for comparing the a power supply voltage and a first set voltage, wherein a first comparison signal is generated when the power supply voltage is greater than the first set voltage; and a second voltage comparator is configured to compare the power supply voltage with a second set voltage, thereby The power supply voltage Generating a second comparison signal at the second set voltage; a first clamping circuit is configured to perform a voltage dividing operation on the power supply voltage to generate a first divided voltage at the first output node according to the second comparison signal ;as well as a second clamping circuit is configured to perform a voltage dividing operation on the power supply voltage to generate a second divided voltage at the second output node according to the second comparison signal; wherein the second set voltage is greater than the first set voltage And wherein the first transistor, the second transistor, the third transistor, and the fourth transistor are not turned on according to the first comparison signal. 根據申請專利範圍第1項之電子裝置,其中該第一電晶體為P通道電晶體,該第二電晶體為N通道電晶體,該第三電晶體為P通道電晶體,而該第四電晶體為N通道電晶體。 The electronic device of claim 1, wherein the first transistor is a P-channel transistor, the second transistor is an N-channel transistor, and the third transistor is a P-channel transistor, and the fourth device The crystal is an N-channel transistor. 根據申請專利範圍第1項之電子裝置,其中該第一電晶體為N通道電晶體,該第二電晶體為N通道電晶體,該第三電晶體為N通道電晶體,而該第四電晶體為N通道電晶體。 The electronic device of claim 1, wherein the first transistor is an N-channel transistor, the second transistor is an N-channel transistor, and the third transistor is an N-channel transistor, and the fourth device The crystal is an N-channel transistor. 根據申請專利範圍第1項之電子裝置,其中該第一箝位電路包含複數個電阻,該等電阻經由一第五電晶體以串聯方式連接於該電源電壓,該第五電晶體根據該第二比較信號而導通。 The electronic device of claim 1, wherein the first clamping circuit comprises a plurality of resistors connected in series to the power supply voltage via a fifth transistor, the fifth transistor being in accordance with the second Compare the signal and turn it on. 根據申請專利範圍第1項之電子裝置,其中該第二箝位電路包含複數個電阻,該等電阻經由一第六電晶體以串聯方式連接於該電源電壓,該第六電晶體根據該第二比較信號而導通。 The electronic device of claim 1, wherein the second clamping circuit comprises a plurality of resistors connected in series to the power supply voltage via a sixth transistor, the sixth transistor being in accordance with the second Compare the signal and turn it on. 根據申請專利範圍第1項之電子裝置,其中該第一箝位電路包含複數個電容,該等電容經由一第七電晶體以串聯方 式連接於該電源電壓,該第七電晶體根據該第二比較信號而導通。 The electronic device of claim 1, wherein the first clamp circuit comprises a plurality of capacitors connected to each other via a seventh transistor Connected to the power supply voltage, the seventh transistor is turned on according to the second comparison signal. 根據申請專利範圍第1項之電子裝置,其中該第二箝位電路包含複數個電容,該等電容經由一第八電晶體以串聯方式連接於該電源電壓,該第八電晶體根據該第二比較信號而導通。 The electronic device of claim 1, wherein the second clamping circuit comprises a plurality of capacitors connected in series to the power supply voltage via an eighth transistor, the eighth transistor being in accordance with the second Compare the signal and turn it on. 根據申請專利範圍第1項之電子裝置,其中該第一箝位電路對該電源電壓進行除以2的分壓動作以產生該第一分壓電壓。 The electronic device according to claim 1, wherein the first clamp circuit divides the power supply voltage by a voltage dividing action of 2 to generate the first divided voltage. 根據申請專利範圍第1項之電子裝置,其中該第二箝位電路對該電源電壓進行除以2的分壓動作以產生該第二分壓電壓。 The electronic device of claim 1, wherein the second clamping circuit divides the power supply voltage by a voltage dividing action of two to generate the second divided voltage.
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Publication number Priority date Publication date Assignee Title
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