TWI570825B - Semiconductor test pad using adhesive and stacked thin sheets of metal and manufacturing method thereof - Google Patents

Description

Semiconductor detecting board for laminating thin metal sheets by using adhesive and manufacturing method thereof

The present invention relates to a semiconductor inspection board in which a metal thin plate is laminated by a binder, and a method of manufacturing the same, and more particularly to a method of bonding a film on a metal thin plate to manufacture a primary thin plate, and etching and laminating the metal thin plate of the primary thin plate. A semiconductor inspection board manufactured by vertical cutting, which laminates a metal thin plate with an adhesive, and a method of manufacturing the same.

In the semiconductor manufacturing, the electrical properties of the semiconductor are generally inspected to confirm the presence or absence of abnormality in the semiconductor manufacturing, and the semiconductor test socket formed to be electrically contactable with the terminal of the semiconductor element is inserted between the semiconductor element and the detection circuit board. Next, perform the check. In addition, the semiconductor test socket is applied to the aging (Burn-In) test in the semiconductor device manufacturing process in addition to the detection of the semiconductor element.

With the development and miniaturization of the integration technology of semiconductor components, the terminals of the semiconductor components, that is, the size and spacing of the leads are also miniaturized, and it is necessary to develop a more compact pattern between the conductive patterns of the test sockets. The method of spacing. Therefore, testing integrated semiconductor components with existing Pogo semiconductor test sockets has many limitations.

Moreover, in the process of directly contacting the terminal or the probe of the semiconductor test socket for electrical connection with the semiconductor, there is a problem that the tiny, thinned semiconductor is damaged from the physical level, and the minimum interval between the electrodes used so far is 250μm, so there is a more reduced interval.

In order to solve the above problems, a technique in which a punching pattern is formed in a vertical direction on a crucible body made of an elastic material and a conductive powder is filled in a pattern of punched holes is widely used. , thereby forming a technique of a conductive pattern.

However, the method of filling the conductive powder has a problem that the durability of the semiconductor detecting plate is inferior, and the powder forming the conductor is detached, resulting in a problem that the number of times of repeated use is lowered.

In addition, in order to fabricate the fine pitch of the semiconductor detecting plate, although a method of vertically dicing the conductive thin plate and the insulating thin plate at a slight thickness of several tens of micrometers, and then laminating again, the vertical cutting method is developed, but if it is vertical with a small thickness, The cutting has a problem that the conductor is separated from the original position due to the thin thickness, and it is difficult to perform the cutting.

An object of the present invention to solve the above problems is to provide a semiconductor test panel in which a metal thin plate is laminated by using an adhesive, and the durability is improved because conductive powder is not used.

Another object of the present invention is to provide a semiconductor detecting board in which a metal thin plate is laminated by using an adhesive, and the distance between the respective conductors has a pitch of several tens of micrometers.

Another object of the present invention is to provide a method for producing a semiconductor test panel in which a metal thin plate is laminated by a binder, which is manufactured in a simpler process than a manufacturing method by a conventional lamination method.

In order to achieve the above object, a semiconductor test board manufacturing method for laminating a metal thin plate using an adhesive according to the present invention is provided, which comprises: a thin plate manufacturing step S1, in which a conductive metal thin plate is pasted on one side of an insulating film, thereby manufacturing a primary thin plate; In an etching step S2, the metal thin plate of the primary sheet is etched to form a plurality of lines, thereby manufacturing a secondary sheet having a predetermined interval of electrical conductors on each line; and stacking step S3, stacking a plurality of the second layers A thin plate to thereby make a stack; a cutting step S4 of cutting the stacked stack with a predetermined thickness.

The film includes at least any one of ruthenium, polyurethane, PI, PET, PEN, PE, PP, PT, and rubber.

In the laminating step, a bonding agent is applied to the second thin plate portion on which the electric conductor on the line is formed, and a plurality of secondary thin plates are laminated by the adhesive layer composed of the adhesive.

The adhesive layer includes at least one of ruthenium, polyurethane, PI, PET, PEN, PE, PP, PT, and rubber.

A plating step is also included, after which the surface of the test plate is electrolessly plated to prevent oxidation of the electrical conductor.

The metal thin plate includes at least any one of Cu, Au, Ag, Pt, Fe, Al, Ni, Mg, Pb, Zn, Sn, Co, Cr, Mn, and C.

As described above, the semiconductor detecting plate in which the metal thin plate is laminated by the adhesive according to the present invention has an effect of high durability of the electric conductor due to lamination by the thin metal plate.

Further, the semiconductor detecting plate of the present invention in which a metal thin plate is laminated by a binder can have a effect of being suitable for a more integrated semiconductor because the distance between the conductors can have a fine pitch of several tens of micrometers.

Further, the method for producing a semiconductor detecting sheet using the adhesive-laminated metal thin plate of the present invention can be manufactured in a simpler process than the manufacturing method by the conventional lamination method, and therefore has a problem of improving productivity and quality.

BEST MODE FOR CARRYING OUT THE INVENTION

Fig. 1 is a flow chart showing a method of manufacturing a semiconductor test panel in which a metal thin plate is laminated by an adhesive according to the present invention. Fig. 2 is a perspective view showing a manufacturing step of a thin plate in a method of manufacturing a semiconductor detecting plate in which a metal thin plate is laminated by a binder according to the present invention. Fig. 3 is a perspective view showing an etching step in a method of manufacturing a semiconductor detecting plate in which a metal thin plate is laminated by a binder according to the present invention. Fig. 4 is a perspective view showing a coating adhesive in a lamination step in a method of manufacturing a semiconductor test sheet in which a metal thin plate is laminated by a binder according to the present invention. Fig. 5 is a perspective view showing lamination of a lamination step in a method of manufacturing a semiconductor test sheet in which a metal thin plate is laminated by a binder according to the present invention. Fig. 6 is a perspective view showing a cutting step in a method of manufacturing a semiconductor test panel in which a metal thin plate is laminated by a binder according to the present invention. Fig. 7 is a perspective view showing a semiconductor detecting plate in which a metal thin plate is laminated by an adhesive according to the present invention.

As shown in FIG. 1, the method for manufacturing a semiconductor test panel using a binder laminated metal thin plate according to the present invention is divided into a thin plate manufacturing step S1, an etching step S2, a laminating step S3, and a cutting step S4, which includes a sheet manufacturing step S1, An insulating film is attached to the conductive metal sheet to manufacture a primary sheet; and an etching step S2 is performed to etch the metal sheet of the primary sheet to form a plurality of lines, thereby fabricating the conductors on the respective lines with a predetermined spacing a sheet of lamination; a lamination step S3, laminating a plurality of the second sheets to fabricate one stack; and a cutting step S4 of cutting the stacked stacks with a predetermined thickness.

Further, a plating step (not shown) may be further included, and after the cutting step S4, the exposed surface of the conductor is plated.

Further, in the pasting and laminating step S3 in the thin plate manufacturing step S1, the lamination is pasted and laminated by a binder or a primer, and the adhesive or primer may be insulative after being cured, and is not particularly limited. .

As shown in Fig. 2, in the method for producing a semiconductor detecting plate using a binder-laminated metal thin plate of the present invention, the thin plate manufacturing step S1 is performed by spraying the adhesive 10 or a primer (hereinafter referred to as a binder) on one surface of the film 2, The adhesive sticks the thin metal plate 1 to one side of the film 2.

As a preferred embodiment, the coating method of the adhesive 10 can be applied by any one of coating, printing, and spraying. Preferably, the coating amount satisfies an amount forming a thickness of 1 to 50 μm.

Moreover, the adhesive should be selected to be insulative after hardening, and further, in order to obtain higher insulation, further include any one of bismuth, polyurethane, PI, PET, PEN, PE, PP, PT, rubber, or Any one of polyurethane, PI, PET, PEN, PE, PP, PT, and rubber is used as a binder, and is applied in a liquid form.

Moreover, the film 2 may be applied to any one of ruthenium, polyurethane, PI, PET, PEN, PE, PP, PT, and rubber, and the metal sheet 1 may be applied to include Cu, Au, Ag, Pt, Fe, Al. At least one of Ni, Mg, Pb, Zn, Sn, Co, Cr, Mn, and C.

As the film 2 and the metal sheet 1 described above are manufactured as a primary sheet 60 by an adhesive, in order to adjust the thickness of the primary sheet 60 or to improve the adhesion between the film 2 and the metal sheet 1, a roll 30 or a pressure can be utilized. A machine (not shown) presses the upper and lower surfaces of the primary sheet 60.

As a preferred embodiment, in order to obtain a smaller pitch between the conductors, it is preferable that the film 2 uses a film having a thickness of 1 to 100 μm, but it may be used as needed (use purpose and detection terminal pitch). Film 2 having a thickness of 5000 μm.

Further, in order to obtain a finer conductor, it is preferable that the metal thin plate 1 uses a film having a thickness of 1 to 100 μm, but a metal thin plate having a thickness of 1 to 5000 μm may be used as needed (use and terminal thickness). 1.

In addition, in another embodiment, a bonding metal sheet 1 can be deposited on one side of the film 2 by a deposition method such as PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition), in addition to the bonding using an adhesive as described above. .

As shown in FIG. 3, in the method of manufacturing a semiconductor detecting board using a binder lamination bonded metal sheet according to the present invention, the etching step S2 etches the thin metal sheet 1 in the film 2 and the thin metal sheet 1 constituting the primary sheet 60, thereby Processing into a secondary sheet, and in more detail, etching the thin metal sheet 1 on one side of the primary sheet to produce a conductor 11 having a plurality of line shapes, and having a plurality of conductors 11 having a line shape to define The spacing is spaced apart from each other.

As a preferred embodiment, it is preferable that the thin metal plate 1 is etched so that the pitch between the electric conductors 11 is spaced apart from the same length as the thickness of the film 2 by 1 to 50 μm. That is, the distance between the conductors 11 is made the same as the thickness of the film 2, so that it can vary with the thickness of the film 2.

Further, preferably, etching is performed with the thickness of the initial metal thin plate 1 so as not to allow the respective conductors 11 to contact each other, and the metal thin plate 1 at the end is like A, and all are etched so that the terminal electrical conductor 11 and the lower insulator The ends of 21 are separated by a predetermined distance and are located inside.

As a preferred embodiment, it is more preferable to describe the etching method by the method using the laser 50, but it is also possible to coat the portion where the conductor 11 is to be formed, and to remove the conductive by a chemical etching method (etching). The body 11 forms a portion other than the portion, thereby improving productivity. As shown in the figure, a method of guiding a portion other than the electric body 11 can be removed by using the laser 50.

Further, by adjusting the etching pitch, the pitch between the conductors 11 can be adjusted, and if etching is performed by laser, the conductor 11 having a trapezoidal shape, a parallelogram shape, and a triangular cross section other than a quadrilateral is formed by the incident angle of the laser. And a plurality of lasers 50 can be utilized to quickly etch a wider range.

As shown in Fig. 4 or Fig. 5, in the method for producing a semiconductor test sheet in which a metal thin plate is laminated by the adhesive of the present invention, a lamination step is performed to apply a binder to form an adhesive layer, followed by lamination.

In more detail, the adhesive coating step of the laminating step S3 is as shown in the portion 401 of FIG. 4, and the adhesive 10 is applied on the conductor 11 on the side of the second-layer thin plate 61 to form an adhesive layer. 3. In more detail, as shown in part 402 of Fig. 4, the adhesive layer 3 can be formed in the shape (A) or the shape (B).

As a preferred embodiment, the coating method of the adhesive 10 can be applied to any one of coating, printing, and spraying. Preferably, in the case of the shape (A) of the portion 402, the amount of the coating layer of the adhesive 10 is such that the coating adhesive 10 having the same thickness as that of the electric conductor 11 is formed, if it is the portion 402 of FIG. In the case of the shape (B), the amount of the coating layer of the adhesive 10 is such that the coating amount of the thickness of the electric conductor 11 is applied to the adhesive 10.

As shown in Fig. 5, the lamination of the lamination step S3 in the method for producing a semiconductor test sheet using the adhesive lamination bonded metal thin plate of the present invention is as follows. With the adhesive layer 3, a plurality of secondary sheets are laminated so as to be parallel to the upper surfaces of the secondary sheets, thereby forming a stack 62 so that the secondary sheets reach a prescribed height.

More specifically, in the lamination step S3, a plurality of secondary thin plates 61 composed of the film 2 and the conductor 11 are used as a binder, and a plurality of adhesive layers 3 made of the adhesive are laminated, and the above-mentioned 4, the film is attached to the upper surface of the film 2, and the other film 2a is adhered to the upper portion of the adhesive layer 3 formed by applying the adhesive to form the adhesive layer 3a on the upper portion of the other film 2a. 2a, the adhesive layer 3a, the film 2b, and the adhesive layer 3b are laminated, and the film 2c is laminated on the uppermost layer, and the lamination operation is completed.

Further, in the above description together with the fourth drawing, a plurality of secondary sheets 61 in which the adhesive layer 3 is formed may be laminated, and then the film 2c may be bonded to each other to terminate the lamination operation.

Further, in the laminating step or after the laminating step, pressurization or drying of the adhesive layer may be performed.

For example, it can be dried in a sequential manner. After the adhesive layer 3 is formed on the upper surface of a second-stage thin plate 61, another secondary thin plate is placed for lamination, heated, pressurized, hardened, and then laminated again with the adhesive. One or two sheets can be dried by the above method.

If another example is given, after a stack 62 can be fabricated, it is heated and pressurized to harden it. That is, after forming the adhesive layer 3 on the upper surface of one of the second sheets 61, another second sheet is placed for lamination, and another adhesive layer is formed on the other second sheet, and then another second sheet is placed for lamination. The way.

Further, heating and pressurization are only one method for hardening, and it is possible to use only one of heating and pressurization or drying by natural conditions.

Moreover, it is preferable that the heating temperature is 30 to 120 ° C, but it is not particularly limited as long as it is a temperature higher than normal temperature at which the curing rate can be increased, and the temperature below the thermal melting point of the film to be used is satisfied.

Further, the pressure of the pressurization differs depending on the insulator material to be used. Preferably, when the cross section of the stacked stack 62 is pressed in a wide range, the pressure is applied within a change rate of 1 to 10%.

Therefore, according to the laminating method, the plurality of second-order thin plates 61 are bonded by a plurality of adhesive layers 3, adhesive layers 3a, adhesive layers 3b, ... to be fabricated into one stack 62, and the stack 62 has a plurality of electric conductors 11 A cross section of a shape in which a plurality of columns and a plurality of rows are arranged at predetermined intervals.

As shown in Fig. 6, in the method of manufacturing a semiconductor detecting plate using a binder-laminated metal thin plate of the present invention, the cutting step S4 is performed by vertically cutting the stack 62 at a predetermined interval in the lateral direction, thereby manufacturing a plurality of semiconductor detecting plates 5.

More specifically, starting from the side of the stack 62 on which the electrical conductor 11 is formed, perpendicularly cutting is performed at a predetermined interval to be parallel to one side, and the cutting method may use any one of a cutting tool such as a laser or a wire or a blade. Cut.

Further, the vertical cutting may be sequentially performed at a predetermined interval on one side of the stack 62 or simultaneously cut at a plurality of positions.

In a preferred embodiment, the cutting pitch is preferably such that the semiconductor detecting plate 5 has a thickness of 1 to 3 mm. However, the use condition of the semiconductor detecting plate 5 may be considered, and the cutting interval may be adjusted under various conditions. Made for manufacturing.

As shown in FIG. 7, the semiconductor detecting plate of the present invention using the adhesive-laminated metal thin plate is subjected to a dicing step S4 to form a semiconductor detecting plate 5, and the semiconductor detecting plate 5 can be supplemented with a plating step (not Graphic).

Further, the present invention provides a semiconductor detecting board in which a metal thin plate is laminated by using an adhesive, comprising: a first layer 21a having a cross section in a quadrangular shape and having an insulator having a predetermined length along the Y-axis direction; and a second layer 21b The quadrilateral electric conductor 11 is configured, wherein the quadrilateral electric conductor 11 penetrates the insulator of the quadrangular cross section (the adhesive layer formed of the adhesive) along the Z-axis direction at every predetermined interval, and the insulator of the quadrangular cross-section has the same The one layer 21a has the same height along the Z-axis direction and the same length along the Y-axis direction.

The first layer 21a and the second layer 21b are alternately laminated in the X-axis direction to form a quadrangular plate as a whole.

The first layer 21a is located at both end portions of the X-axis of the plate.

As described above, the shape of the upper surface and the lower surface of the semiconductor detecting plate 5 manufactured by the cutting step S4 is the same, and the side portions are each formed of an insulator.

Further, as in the A1 portion of Fig. 7, a first layer 21a and a second layer 21b are formed, wherein the first layer 21a has a quadrangular cross-sectional shape, a predetermined length in the Y-axis direction, and is composed of an insulator (film). And the second layer 21b is an insulator (adhesive) having a quadrangular cross section with a height equal to the Z-axis height of the first layer 21a on the side surface of the first layer 21a in the X-axis direction. Further, the second layer 21b is formed to penetrate in the Z-axis direction by a plurality of conductors 11 having the same Z-axis height so as to be spaced apart from each other by a predetermined interval in the Y-axis direction.

The second layer 21b and the first layer 21a are alternately laminated along the side surface in the X-axis direction of the first layer 21a, and the first layer 21a is formed at both end portions of the X-axis.

As described above, the plurality of first layers 21a and the second layers 21b are alternately laminated to form the quadrilateral semiconductor detecting plate 5.

Further, the second end portion of the second layer 21b in the Y-axis direction does not form the conductor 11, and the side surface portion is always composed of an insulator.

Further, as shown in part B3 of Fig. 7, the electric conductor 11 formed on the second layer 21b can have a shape which tends to be in the direction of the first layer 21a, which is the adhesive of the laminating step S3 in the manufacturing process of the semiconductor detecting plate 5. It is formed by a coating method in which an insulator (adhesive) having a height higher than that of the conductor 11 is applied.

Further, when the portion B3 of Fig. 7 is laminated so as to form a thin plate shape as in the portion B2 of Fig. 7, the interval between the conductors 11 in the X-axis direction is compared with the portion A2 of Fig. 7. This is because the thickness H1 of the conductor 11 is the same, but the adhesive height H2 of the binder is different from each other.

As a preferred embodiment, preferably, the interval between the respective conductors is 10 to 50 μm, and the thickness H1 of the conductor is 5 to 30 μm, but may vary depending on the thickness of the adhesive layer and the thickness of the metal thin plate. It is also possible to partially etch the upper surface of the conductor during the etching process to form a conductor having a smaller thickness.

Further, in the plating step S5 performed after the dicing step S4, in order to prevent corrosion of the conductor 11 exposed on the upper surface and the lower surface of the semiconductor detecting plate 5, the upper and lower surfaces of the respective conductors 11 are plated and plated. The semiconductor detecting plate 5 after the step S5 further includes a plating layer on the upper surface and the lower surface of the conductor 11.

Further, in the plating step S5, the entire outer surface of each semiconductor detecting plate is plated, but the insulating material (film and adhesive) other than the conductor 11 does not adhere to the plating material, so that plating can be formed.

Therefore, only the upper and lower sides of the exposed electric conductors 11 are plated.

As a preferred embodiment, electric power supplied from the outside is not received, and preferably, electroless plating is performed, which uses auto-catalysis to reduce metal in the aqueous solution of the metal salt by the force of the reducing agent, and precipitates metal on the surface of the object to be treated. In order to obtain better plating quality, it is also possible to carry out the first plating and the second plating step by step.

Further, the plating material of the first plating and the second plating may be different, and the metal to be plated is determined by comparing the reactivity of the conductor 11 (the tendency of the metal atom to oxidize to become a cation). The metal having the lowest reactivity is used in the order of the highest conductivity of the conductor 11 and the first plating of the metal and the second plating of the metal.

Therefore, according to the reactivity of the metal, there is an effect that the surface of the conductor 11 after plating can be prevented from being corroded.

For example, when Cu is used as the conductor 11 and only the first plating is performed, plating is performed using a metal having a lower reactivity than Cu such as Au or Ag.

In addition, when Cu is used as the conductor 11 and the first plating and the second plating are performed, the first plating is performed after the first plating using a metal having a reactivity lower than Cu such as Ni or Ag. The secondary plating is performed by using a metal such as Pt or Au which is less reactive than the first plating.

As a preferred embodiment, when only the first plating is performed, preferably, the plating thickness is 1 to 10 μm, and if the first plating and the second plating are performed, the total thickness of the plating is 1~. 15μm.

As described above, the present invention has been described with reference to the accompanying drawings, and the preferred embodiments of the present invention are intended to Obvious. The scope of the invention is, therefore, construed by the appended claims

1: Sheet metal 2, 2a, 2b, 2c: Film 3, 3a, 3b: Adhesive layer 5: Semiconductor test board 10: Adhesive 11: Conductor 30: Roll 50: Laser 60: Primary sheet 61: Secondary sheet 62 : Stacking S1 to S4: Step 21a: First layer 21b: Second layer (A), (B): Shape H1: Thickness H2: Height

Fig. 1 is a flow chart showing a method of manufacturing a semiconductor test sheet in which a metal thin plate is laminated by a binder according to the present invention.

Fig. 2 is a perspective view showing a manufacturing step of a thin plate in a method of manufacturing a semiconductor detecting plate in which a metal thin plate is laminated by an adhesive according to the present invention.

Fig. 3 is a perspective view showing an etching step in a method of manufacturing a semiconductor detecting plate in which a metal thin plate is laminated by a binder according to the present invention.

Fig. 4 is a perspective view showing a coating adhesive in a laminating step in a method for producing a semiconductor detecting plate in which a metal thin plate is laminated by a binder according to the present invention.

Fig. 5 is a perspective view showing the lamination of a lamination step in a method of manufacturing a semiconductor test sheet in which a metal thin plate is laminated by a binder according to the present invention.

Fig. 6 is a perspective view showing a cutting step in a method of manufacturing a semiconductor test sheet in which a metal thin plate is laminated by a binder according to the present invention.

Fig. 7 is a perspective view showing a semiconductor detecting plate in which a metal thin plate is laminated by an adhesive according to the present invention.

S1 ~ S4: steps

Claims (6)

A method for manufacturing a semiconductor test board by laminating a metal thin plate with an adhesive, comprising: a thin plate manufacturing step S1, wherein a conductive metal thin plate is pasted on one side of one of the insulating films to fabricate a primary thin plate; S2, etching the metal thin plate of the primary sheet to form a plurality of lines, thereby manufacturing a plurality of second-order sheets separated by a predetermined interval on each of the plurality of lines; a laminating step S3, laminating plural The secondary sheets are thereby fabricated to form a stack; and a cutting step S4 is to cut the stacked stacks at a predetermined thickness. A method for manufacturing a semiconductor test panel using a binder laminated metal sheet according to claim 1, wherein the film comprises at least one of ruthenium, polyurethane, PI, PET, PEN, PE, PP, PT, and rubber. . A method for fabricating a semiconductor inspection board using a binder laminated metal sheet according to claim 1, wherein the laminating step is to apply a coating to the second thin plate portion of the plurality of electric conductors formed on the line. a binder, and a plurality of the second sheets are laminated by using an adhesive layer composed of the binder. A method for manufacturing a semiconductor test panel using a binder laminated metal sheet according to claim 3, wherein the adhesive layer comprises at least any one of ruthenium, polyurethane, PI, PET, PEN, PE, PP, PT, and rubber. One. A method for fabricating a semiconductor test panel using a binder laminated metal sheet according to claim 1, further comprising a plating step, after the cutting step, electroless plating the surface of the semiconductor detecting plate to prevent Oxidation of the plurality of electrical conductors. A method for fabricating a semiconductor inspection board using a binder laminated metal sheet according to claim 1, wherein the metal sheet comprises Cu, Au, Ag, Pt, Fe, Al, Ni, Mg, Pb, Zn, Sn At least one of Co, Cr, Mn, and C.