TWI569477B - Micro-channel-cooled high heat load light emitting device - Google Patents

Micro-channel-cooled high heat load light emitting device Download PDF

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TWI569477B
TWI569477B TW101131935A TW101131935A TWI569477B TW I569477 B TWI569477 B TW I569477B TW 101131935 A TW101131935 A TW 101131935A TW 101131935 A TW101131935 A TW 101131935A TW I569477 B TWI569477 B TW I569477B
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array
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TW201409761A (en
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強納森S 戴罕
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賀利氏諾伯燈具輻深紫外線公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Description

微通道冷卻之高熱負載發光裝置 Microchannel cooling high heat load illuminating device

本發明之實施例大體而言係關於微通道冷卻之發光二極體(LED)。詳言之,本發明之實施例係關於提供高亮度、高照射度及高能量密度的高功率密度、高填充因數、微通道冷卻紫外線(UV)LED燈頭模組。 Embodiments of the invention generally relate to light-emitting diodes (LEDs) for microchannel cooling. In particular, embodiments of the present invention relate to high power density, high fill factor, microchannel cooled ultraviolet (UV) LED lamp head modules that provide high brightness, high illumination, and high energy density.

本申請案為2011年1月26日申請之美國專利申請案第13/014,069號之部分連續案,其主張以下臨時專利申請案之優先權的權益:於2010年1月27日申請之美國臨時專利申請案第61/336,979號;於2010年4月1日申請之美國臨時專利申請案第61/341,594號;及於2010年11月5日申請之美國臨時專利申請案第61/456,426號,該等臨時專利申請案特此全部為達成所有目的而以全文引用方式併入本文中。 This application is a continuation-in-part of U.S. Patent Application Serial No. 13/014,069, filed on Jan. 26, 2011, which claims the priority of the following provisional patent application: US Provisional Application, filed on January 27, 2010 U.S. Provisional Patent Application No. 61/341,594, filed on Apr. 1, 2010, and U.S. Provisional Patent Application No. 61/456,426, filed on November 5, 2010, The provisional patent applications are hereby incorporated by reference in their entirety for all purposes for all purposes.

版權聲明Copyright Notice

本文所含內容為受到版權保護之材料。版權所有者不反對任何人傳真複製出現在專利及商標局專利檔案或記錄中的本專利揭示內容,但在其他方面保留所有版權。Copyright © 2010-2012,Fusion UV Systems,Inc. The content contained herein is the material protected by copyright. The copyright owner has no objection to the facsimile reproduction by anyone of the disclosure of this patent appearing in the Patent and Trademark Office patent file or file, but otherwise retains all copyrights. Copyright © 2010-2012,Fusion UV Systems,Inc.

現今之UV LED的效率仍相對較低(通常,在高電流密度下操作時以約20%之效率操作)。此等效率低下導致產生大量之廢熱,且因此至少需要空氣冷卻且通常需要液體冷卻(例如,熱交換器及/或冷凍器)以移除不當之廢熱,廢熱為在半導體裝置之p-n接面內之電光轉換過程的副產物。若 並未以極有效且高效率之方式來移除熱,則LED裝置可遭受效率損失、光輸出減少及甚至災難性故障。 Today's UV LEDs are still relatively inefficient (typically operating at about 20% efficiency when operating at high current densities). Such inefficiencies result in a large amount of waste heat, and therefore at least air cooling is required and liquid cooling (eg, heat exchangers and/or chillers) is typically required to remove undue waste heat, which is within the pn junction of the semiconductor device. A by-product of the electro-optical conversion process. If Without the heat being removed in an extremely efficient and efficient manner, LED devices can suffer from loss of efficiency, reduced light output, and even catastrophic failure.

液體冷卻式UV LED燈(或光引擎)目前正用於各種固化應用中;然而,現有系統具有若干限制。舉例而言,雖然業界文獻承認需要高亮度/高照射度陣列,但目前可用之UV LED燈提供次最佳的效能。 Liquid cooled UV LED lamps (or light engines) are currently being used in a variety of curing applications; however, existing systems have several limitations. For example, while industry literature acknowledges the need for high brightness/high illumination arrays, currently available UV LED lamps provide sub-optimal performance.

先前技術UV LED陣列之具體實例說明於圖1A及圖1B中。在此實例(其係取自美國公開案第2010/0052002號(下文為「歐文」))中,描繪聲稱為「密集」之LED陣列100以用於據稱需要「高光功率密度」的應用。藉由在基板152內形成微反射器154且將LED 156安裝於每一微反射器154內來建構陣列100。LED 156經由至基板152上之線接合墊的引線158而電連接至電源(圖中未展示)。微反射器154各自包括一反射層162以反射由相關聯LED 156產生之光。顯著地,儘管被特徵化為「密集」LED陣列,但LED陣列100實際上為極低填充因數、低亮度、低熱通量之陣列,此係因為個別LED 156相隔相當長之距離,其中心至中心之間距為約800微米。充其量,看來該等LED佔LED陣列100之表面積的大致10%至20%之間且無疑小於50%。此低填充因數LED陣列可產生不均勻之照射度圖案,其可導致不均勻之固化及肉眼可察覺之異常,諸如混疊及像素化。另外,微反射器154由於其較低之角範圍而不能捕獲及控制大量之光。因此,陣列100產生隨著距反射器154之距離增加而快速損失照射度的低照射度射束。應進一步注意到, 由於最終投射至工件上之光束無法比光源(在此種情況下為LED陣列100)更亮,因此甚至最佳組態之反射器都無法補償LED陣列100之低亮度。此係歸因於熟知之亮度守恆定理。此外,歐文亦未教示巨型反射器之使用(歸因於其大小)及使一反射器與每一個別LED 156相關聯的察覺到之需要。 Specific examples of prior art UV LED arrays are illustrated in Figures 1A and 1B. In this example, which is taken from US Publication No. 2010/0052002 (hereinafter "Owen"), the LED array 100 claimed to be "dense" is depicted for applications where "high optical power density" is said to be required. The array 100 is constructed by forming a micro-reflector 154 within the substrate 152 and mounting the LEDs 156 within each of the micro-reflectors 154. LED 156 is electrically coupled to a power source (not shown) via leads 158 to wire bond pads on substrate 152. The micro-reflectors 154 each include a reflective layer 162 to reflect light generated by the associated LEDs 156. Significantly, although characterized as a "dense" LED array, the LED array 100 is actually an array of very low fill factor, low brightness, low heat flux, because the individual LEDs 156 are separated by a considerable distance, centered to The distance between the centers is about 800 microns. At best, it appears that the LEDs are between approximately 10% and 20% of the surface area of the LED array 100 and are undoubtedly less than 50%. This low fill factor LED array can produce a non-uniform illumination pattern that can result in uneven solidification and visually detectable anomalies such as aliasing and pixelation. In addition, the micro-reflector 154 cannot capture and control a large amount of light due to its lower angular extent. Thus, array 100 produces a low illumination beam that rapidly loses illumination as the distance from reflector 154 increases. It should be further noted that Since the beam ultimately projected onto the workpiece cannot be brighter than the source (in this case, LED array 100), even the best configured reflector cannot compensate for the low brightness of LED array 100. This is due to the well-known brightness conservation theory. In addition, Irving also does not teach the use of a giant reflector (due to its size) and the perceived need to associate a reflector with each individual LED 156.

除了前述限制之外,先前技術冷卻設計中所使用的相對較大通道液體冷卻技術不能夠以當每平方毫米之電流超過約1.5安培時有效地使接面溫度保持足夠低的方式自LED移除廢熱。 In addition to the foregoing limitations, the relatively large channel liquid cooling techniques used in prior art cooling designs are not capable of being removed from the LEDs in a manner that effectively keeps the junction temperature low enough when the current per square millimeter exceeds about 1.5 amps. Waste heat.

氧抑制(Oxygen inhibition)為以與由UV光誘發之化學交聯相當之速率與固化材料發生反應的環境氧與光引發劑(PhI)相互作用之間的競爭。已知較高照射度更快速地產生澈底固化,且已知較高照射度至少部分解決了氧抑制問題。現在認為超高照射度在某些製程組態中可能甚至在無氮覆蓋氣體之情況下亦可克服氧抑制問題。然而,為了產生超高照射度以克服氧抑制,熱通量移除速率需要使接面溫度在以極高電流密度操作之此高填充因數LED陣列環境中保持足夠低,且完全不可藉由當前所使用之UV LED陣列架構及UV LED陣列冷卻技術來獲得。 Oxygen inhibition is the competition between ambient oxygen and photoinitiator (PhI) interactions with a solidified material at a rate comparable to the chemical cross-linking induced by UV light. It is known that higher irradiance produces a clear cure more quickly, and that higher irradiance is known to at least partially solve the oxygen suppression problem. It is now believed that ultra-high irradiance may overcome oxygen suppression problems in certain process configurations even in the absence of nitrogen-laden gas. However, in order to produce ultra-high irradiance to overcome oxygen suppression, the heat flux removal rate needs to keep the junction temperature low enough in this high fill factor LED array environment operating at very high current densities, and not at all by current The UV LED array architecture and UV LED array cooling technology used were obtained.

描述針對材料之光化學固化及其他高亮度應用組態的微通道冷卻之UV固化系統及其組件。根據一實施例,一燈頭模組具備一發光裝置(LED)陣列及一基台。該陣列具有 一高縱橫比,其中該陣列之長度大於該陣列之寬度。該等LED緊密地間隔以產生一高填充因數。該陣列包括電串聯LED的多個電並聯連接的群組。該基台為單片構造的且包括多個L形經圖案化電路材料層。該等L形經圖案化電路材料層中之每一者包括一臂部分及一支柱部分。該臂部分充當一LED接合墊,且該支柱部分充當一線接合墊及一電路跡線。一電串聯LED群組中之每一LED固定(affix)至該基台之一相應臂部分。該等支柱部分實質上位於藉由該陣列之該長度及該寬度界定之一區域之外、實質上平行於該陣列之該長度延伸,且共同地執行針對該電串聯LED群組中之鄰近LED之間的電流的一主要電流載運功能。 A UV curing system and its components that describe microchannel cooling for photochemical curing of materials and other high brightness applications. According to an embodiment, a base module has an array of light emitting devices (LEDs) and a base. The array has A high aspect ratio wherein the length of the array is greater than the width of the array. The LEDs are closely spaced to create a high fill factor. The array includes a plurality of electrically parallel connected groups of electrically series LEDs. The submount is monolithically constructed and includes a plurality of L-shaped patterned circuit material layers. Each of the L-shaped patterned circuit material layers includes an arm portion and a pillar portion. The arm portion acts as an LED bond pad and the post portion acts as a wire bond pad and a circuit trace. Each of the LEDs in an electrical series LED group is affixed to a respective arm portion of the one of the base stations. The pillar portions are substantially located outside the region defined by the length of the array and the width, substantially parallel to the length of the array, and collectively perform for adjacent LEDs in the group of electrically connected LEDs A primary current carrying function between the currents.

在另一實施例中,一燈頭模組包括一發光裝置(LED)陣列及一對光學巨型反射器。該陣列具有一高縱橫比,其中該陣列之長度大於該陣列之寬度。該對光學巨型反射器引導藉由該陣列發射之光子且在一工件之一表面上產生具有一頂帽量變曲線(top hat profile)之一射束圖案。 In another embodiment, a base module includes an array of light emitting devices (LEDs) and a pair of optical giant reflectors. The array has a high aspect ratio wherein the length of the array is greater than the width of the array. The pair of optical giant reflectors direct photons emitted by the array and produce a beam pattern having a top hat profile on one of the surfaces of the workpiece.

在又一實施例中,一燈頭模組包括一燈體、一電源、一高亮度及高縱橫比之發光裝置(LED)陣列、一基台,及一撓曲電路。該電源包括一陽極輸出連接及一陰極輸出連接。該陣列具有一發光表面。該基台經組態以將該陣列中之多個LED電串聯地電耦接,且包括多個LED接合墊區域及多個線接合區域。該撓曲電路安裝至該燈體且在其長度及高度方面具有一高縱橫比。該撓曲電路在其中形成有一定位孔隙,該基台安裝於該定位孔隙內,且該撓曲電路包 括電極性相反之導電經圖案化層,該經圖案化層包括一陽極層及一陰極層。該撓曲電路之一第一末端暴露該陽極層之一第一部分以形成與該電源之該陽極輸出連接之一電連接,且暴露該陰極層之一第一部分以形成與該電源之該陰極輸出連接之一電連接。該撓曲電路之一第二末端暴露該陽極層之一第二部分,該第二部分電耦接至與一電串聯LED群組中之第一個LED相關聯的一LED接合墊區域。該撓曲電路之第二末端暴露該陰極層之一第二部分,該第二部分電耦接至與該群組中之最後一個LED相關聯的一線接合區域的一陰極部分。 In still another embodiment, a base module includes a lamp body, a power source, a high brightness and high aspect ratio light emitting device (LED) array, a base, and a flex circuit. The power supply includes an anode output connection and a cathode output connection. The array has a light emitting surface. The base station is configured to electrically couple the plurality of LEDs in the array electrically in series and includes a plurality of LED bond pad regions and a plurality of wire bond regions. The flex circuit is mounted to the lamp body and has a high aspect ratio in terms of its length and height. The flex circuit has a positioning aperture formed therein, the base is mounted in the positioning aperture, and the flex circuit package An electrically conductive patterned layer of opposite polarity is included, the patterned layer comprising an anode layer and a cathode layer. a first end of the flex circuit exposes a first portion of the anode layer to form an electrical connection with one of the anode output connections of the power source, and exposes a first portion of the cathode layer to form the cathode output with the power source Connect one of the electrical connections. A second end of the flex circuit exposes a second portion of the anode layer, the second portion being electrically coupled to an LED bond pad region associated with a first one of the electrical series LED groups. A second end of the flex circuit exposes a second portion of the cathode layer, the second portion being electrically coupled to a cathode portion of a line junction region associated with a last LED of the group.

本發明之實施例的其他特徵將自附圖及自接下來之「實施方式」而顯而易見。 Other features of the embodiments of the present invention will be apparent from the accompanying drawings.

以舉例方式而非限制方式在附圖之諸圖中說明本發明之實施例,且在附圖中,相似參考數字指代類似元件。 The embodiments of the invention are illustrated by way of example, and not in the

描述了經組態用於材料之光化學固化及需要高填充因數、高電流密度及高亮度屬性(此最終導致高照射度之屬性)之其他應用的微通道冷卻之UV固化系統及其組件。根據本發明之一實施例,一超高照射度UV固化系統之一高填充因數之LED陣列中的LED與藉由相應電源運作之串聯LED之一或多個群組串聯/並聯地置放。舉例而言,串聯LED之多個群組可藉由單一電源來運作、每一群組可藉由自己之電源來運作,或其組合。UV固化系統可提供自100奈米至10,000奈米的廣泛範圍之波長。 A microchannel cooled UV curing system and components thereof configured for photochemical curing of materials and other applications requiring high fill factor, high current density, and high brightness properties, which ultimately result in high illumination properties, are described. In accordance with an embodiment of the present invention, an LED in a high fill factor LED array of one of the ultra high illumination UV curing systems is placed in series/parallel with one or more groups of series LEDs operated by respective power sources. For example, multiple groups of series LEDs can be operated by a single power source, each group can be operated by its own power source, or a combination thereof. UV curing systems offer a wide range of wavelengths from 100 nm to 10,000 nm.

根據本發明之實施例,為了適應高填充因數、高電流密度及高亮度UV LED燈頭模組之熱通量/熱需求,亦提供用以達成等溫基板行為的實用方式。根據一實施例,一LED陣列直接接合至一微通道冷卻器,且冷卻劑在實質上平行於LED陣列之最短維度之方向上流過LED陣列及在LED陣列之下流動。在一實施例中,流經在LED之下延伸之微通道的冷卻劑大致相等(例如,平衡),以使得LED陣列之LED的p-n接面實質上等溫。在一實施例中,高縱橫比之基板實質上自側至側及自端至端等溫。此情形可經由使用實質上銅的微通道冷卻器來達成,該微通道冷卻器具有如下微通道,該等微通道在相對於LED陣列之縱軸實質上橫向的方向上引導在LED陣列下之冷卻劑流,同時維持每一通道之間的嚴格之流平衡範圍。在一實施例中,藉由設計平行於LED陣列之縱軸延伸的主冷卻劑入口及出口冷卻劑流體通道以達到沿通道長度幾乎均勻的壓力降位準來達成此流平衡。 In accordance with embodiments of the present invention, in order to accommodate the heat flux/heat requirements of high fill factor, high current density, and high brightness UV LED lamp head modules, practical ways to achieve isothermal substrate behavior are also provided. According to an embodiment, an array of LEDs is directly bonded to a microchannel cooler, and the coolant flows through and under the LED array in a direction substantially parallel to the shortest dimension of the LED array. In one embodiment, the coolant flowing through the microchannels extending under the LEDs is substantially equal (eg, balanced) such that the p-n junctions of the LEDs of the LED array are substantially isothermal. In one embodiment, the high aspect ratio substrate is substantially isothermal from side to side and from end to end. This can be achieved via the use of a substantially copper microchannel cooler having microchannels that are guided under the LED array in a substantially lateral direction relative to the longitudinal axis of the LED array. Coolant flow while maintaining a tight flow balance between each channel. In one embodiment, this flow balance is achieved by designing a primary coolant inlet and outlet coolant fluid passage extending parallel to the longitudinal axis of the LED array to achieve a nearly uniform pressure drop level along the length of the passage.

在各種實施例中,接合至一微通道冷卻器之一多層撓曲電路用以對一LED陣列中之LED群組供電,以便允許一對巨型非成像光學反射器位於該LED陣列附近,藉此藉由最大化受該反射器對控制的所發出光子的數量來維持照射度。 In various embodiments, a multilayer flex circuit coupled to a microchannel cooler is used to power a group of LEDs in an array of LEDs to allow a pair of giant non-imaging optical reflectors to be positioned adjacent to the array of LEDs. This maintains the illumination by maximizing the number of emitted photons controlled by the pair of reflectors.

在一些實施例中,該LED陣列藉由一AC/DC電源供應器(有時被稱作整流器)來驅動,該AC/DC電源供應器可購自紐約尼斯卡於納(Niskayuna,NY)之General Electric(GE)且 較佳具有高電壓擺動,而典型48 V DC輸出具有約1%之範圍。舉例而言,在一實施例中,使用如下電源供應器,其具有約+/- 20%至25%之電壓擺動,同時仍維持高效率(例如,約97%或更大)、緊密性及低成本。德州普萊諾(Plano,Texas)之GE/Lineage製造出了一系列12、24及48 V之AC-DC電源供應器,其為高MTBF及高效率的且意欲主要用於資料儲存及電信產業。有利地,本發明之實施例使用較佳48 V「大電壓擺動」型號,例如CP2000,其可有效地輸出低於及高於標稱48 V之一系列使用者選定之輸出電壓。大多數電源供應器不具有此大電壓擺動特徵--尤其係OTS、有效的及節省成本的。電壓可經由+/- 5 V之輸入來由使用者選擇。此電壓擺動最終允許容易地控制藉由LED陣列發射之光功率。 In some embodiments, the LED array is driven by an AC/DC power supply (sometimes referred to as a rectifier) available from Niskayuna, NY. General Electric (GE) and It is preferred to have a high voltage swing, while a typical 48 V DC output has a range of about 1%. For example, in one embodiment, a power supply having a voltage swing of about +/- 20% to 25% with high efficiency (eg, about 97% or greater), tightness, and low cost. GE/Lineage of Plano, Texas, manufactures a range of 12, 24 and 48 V AC-DC power supplies that are high MTBF and highly efficient and are intended primarily for data storage and telecommunications industries. . Advantageously, embodiments of the present invention use a preferred 48 V "large voltage swing" model, such as the CP2000, which effectively outputs an output voltage selected by a user below and above the nominal 48 V series. Most power supplies do not have this large voltage swing feature - especially OTS, efficient and cost effective. The voltage can be selected by the user via an input of +/- 5 V. This voltage swing ultimately allows easy control of the optical power emitted by the LED array.

在一些實施例中,使用工廠及/或現場可替換之巨型反射器,其可藉由提供不同效能特性(例如,高照射度、高度聚焦;聚焦之短工作距離、長工作距離;需要大焦點深度同時維持高照射度之應用;及非常寬之角度,更均一之照射度應用)而被自訂用於特定應用。 In some embodiments, factory and/or field replaceable giant reflectors are used that can provide different performance characteristics (eg, high illumination, high focus; short working distance for focusing, long working distance; large focus required) Depth while maintaining high illumination levels; and a very wide angle, more uniform illumination application) is customized for specific applications.

在以下描述中,陳述眾多具體細節以提供對本發明之實施例的透徹理解。然而,熟習此項技術者將顯見,本發明之實施例可在無此等具體細節中之一些的情況下實踐。 Numerous specific details are set forth in the following description in order to provide a thorough understanding of the embodiments of the invention. It will be apparent to those skilled in the art, however, that the embodiments of the invention may be practiced without some of the specific details.

顯著地,雖然可在UV LED系統之內容背景中描述本發明之實施例,但本發明之實施例不限於此。舉例而言,在UV範圍之外的其他波長(包括深UV、可見光、紅外線、微 波及x射線),單獨地或與一個或多個UV波長組合起來,亦可得益於本文所描述之架構。此外,藉由使用UV A、B或C發光裝置及可見光及/或IR發光裝置,在同一發光裝置燈內可使用各不相同之波長來模仿汞燈之輸出。本發明之實施例之高填充因數特性亦允許實現各種波長之相互支出(inter-disbursement),同時避免在工件表面上之像素化效應,此像素化效應很有可能導致不利之製程效應。另外,根據各種實施例,自功率密度及波長混合之觀點而言,在巨型非成像光學反射器內之波長混合導致均一(非像素化)輸出射束。 Notably, although embodiments of the invention may be described in the context of the content of a UV LED system, embodiments of the invention are not limited thereto. For example, other wavelengths outside the UV range (including deep UV, visible, infrared, micro) Spreading x-rays, either alone or in combination with one or more UV wavelengths, may also benefit from the architecture described herein. Furthermore, by using UV A, B or C illumination devices and visible and/or IR illumination devices, different wavelengths can be used in the same illumination device lamp to mimic the output of the mercury lamp. The high fill factor characteristics of embodiments of the present invention also allow for inter-disbursement of various wavelengths while avoiding pixelation effects on the surface of the workpiece, which is likely to result in adverse process effects. Additionally, according to various embodiments, wavelength mixing within a giant non-imaging optical reflector results in a uniform (non-pixelated) output beam from a power density and wavelength mixing perspective.

為簡短起見,可在底部上具有陽極側之LED的內容背景中描述本發明之實施例,但一般熟習此項技術者將認識到陽極側可在頂面上及/或陽極接點及陰極接點皆可在頂部或底部上。因而,本文中對陽極/陰極結構之參考可視特定實施方案而為相反的(或可為電中性的)。類似地,可考慮覆晶式非線接合之LED、導電基板及非導電基板LED晶片(諸如,具有在藍寶石、氮化鋁、矽、氧化鋅或氮化鎵(GaN))上之EPI層的LED晶片)、陣列及/或封裝好之裝置。該EPI層可選自氮化物、氧化物、矽化物、碳化物、磷化物、砷化物等之群組。 For the sake of brevity, embodiments of the invention may be described in the context of an LED having an anode side on the bottom, but those skilled in the art will recognize that the anode side may be on the top surface and/or the anode contact and cathode. The contacts can be on the top or bottom. Thus, references herein to anode/cathode structures may be reversed (or may be electrically neutral) depending on the particular implementation. Similarly, flip-chip non-wire bonded LEDs, conductive substrates, and non-conductive substrate LED wafers (such as having an EPI layer on sapphire, aluminum nitride, tantalum, zinc oxide, or gallium nitride (GaN)) can be considered. LED wafers), arrays and/or packaged devices. The EPI layer can be selected from the group of nitrides, oxides, tellurides, carbides, phosphides, arsenides, and the like.

術語the term

下文給出貫穿本申請案所使用之術語的簡短定義。 A short definition of the terms used throughout this application is given below.

片語「平均照射度」大體上指代跨越投射於工件上之輸出射束圖案之寬度的照射度值,其中照射度值在輸出射束 圖案之每一側上基本上下降至零。在本發明之實施例中,在距窗2 mm處,UV LED燈頭模組產生約80 W/cm2(範圍係8 W/cm2至800 W/cm2)之平均頂帽照射度。在本發明之實施例中,在距窗53 mm處,UV LED燈頭模組產生約10 W/cm2(範圍係5 W/cm2至50 W/cm2)之平均照射度。在本發明之實施例中,在距窗5 mm處,一UV LED燈頭模組產生約32 W/cm2(範圍係10 W/cm2至100 W/cm2)之平均照射度,其具有寬度約8 mm之一輸出射束圖案及一「頂帽」量變曲線。在其他實施例中,在距窗65 mm處,一UV LED燈頭模組產生約7 W/cm2(範圍係1 W/cm2至20 W/cm2)之平均照射度,其具有寬度為25 mm之一輸出射束圖案及一「頂帽」量變曲線。在其他實施例中,在距窗170 mm處,一UV LED燈頭模組產生約7 W/cm2(範圍係0.5 W/cm2至10 W/cm2)之平均照射度,其具有寬度為50 mm之一輸出射束圖案及一「頂帽」量變曲線。在一些實施例中,在距窗65 mm處,亦可產生不對稱頂帽量變曲線(傾斜頂帽)及寬度為25 mm之輸出射束圖案,其中峰值照射度約8 W/cm2(範圍係1 W/cm2至20 W/cm2)。 The phrase "average illumination" generally refers to an illumination value that spans the width of the output beam pattern projected onto the workpiece, wherein the illumination value drops substantially to zero on each side of the output beam pattern. In an embodiment of the invention, the UV LED lamp head module produces an average top hat illuminance of about 80 W/cm 2 (range 8 W/cm 2 to 800 W/cm 2 ) at a distance of 2 mm from the window. In an embodiment of the invention, the UV LED lamp head module produces an average illumination of about 10 W/cm 2 (range 5 W/cm 2 to 50 W/cm 2 ) at 53 mm from the window. In an embodiment of the invention, a UV LED lamp head module produces an average illumination of about 32 W/cm 2 (range 10 W/cm 2 to 100 W/cm 2 ) at a distance of 5 mm from the window, which has An output beam pattern with a width of about 8 mm and a "top hat" volume change curve. In other embodiments, a UV LED lamp head module produces an average illumination of about 7 W/cm 2 (range 1 W/cm 2 to 20 W/cm 2 ) at a distance of 65 mm from the window, which has a width of One output beam pattern of 25 mm and a "top hat" volume change curve. In other embodiments, a UV LED lamp head module produces an average illumination of about 7 W/cm 2 (range 0.5 W/cm 2 to 10 W/cm 2 ) at a distance of 170 mm from the window, which has a width of One output beam pattern of 50 mm and a "top hat" volume change curve. In some embodiments, an asymmetrical top cap volume change curve (inclined top cap) and an output beam pattern having a width of 25 mm can also be produced at a distance of 65 mm from the window, wherein the peak illumination is about 8 W/cm 2 (range It is 1 W/cm 2 to 20 W/cm 2 ).

術語「連接」、「耦接」、「安裝」及相關術語係以操作性意義來使用且未必限於直接連接、耦接或安裝。 The terms "connected," "coupled," "installed," and related terms are used in an operational sense and are not necessarily limited to direct connection, coupling, or mounting.

片語「擴散接合」大體上指代類似於焊接的接合金屬之方法,但僅依賴於作為「焊接」之手段的至彼此之表面擴散。舉例而言,一擴散接合製程可藉由將通常為實質上類似材料之層(有時具有諸如鎳之抗氧化鍍層)夾緊到一起, 且使該等層經受約攝氏1,000度(範圍係攝氏500度至攝氏5,000度)之極高溫,且藉此使表面分子互相混合且形成實質上單片材料來接合該等層,其中粒子互相混合且通常實質上難以從塊體材料中分辨接合線,且在導熱性及強度方面,擴散接合之材料的性質與塊體非擴散接合之材料並無實質不同。擴散接合可與燒結具有一些類似處。亦可使用大約幾微米之薄銀鍍層來促進該等層之接合的簡易性。此後一種製程可與錫焊具有一些類似處。 The phrase "diffusion bonding" generally refers to a method of joining metal similar to soldering, but relies only on the surface diffusion to each other as a means of "welding". For example, a diffusion bonding process can be clamped together by laminating layers that are typically substantially similar materials, sometimes with an oxidation resistant coating such as nickel. And subjecting the layers to an extremely high temperature of about 1,000 degrees Celsius (ranging from 500 degrees Celsius to 5,000 degrees Celsius), and thereby bonding the surface molecules to each other and forming a substantially monolithic material to join the layers, wherein the particles are intermixed It is generally difficult to distinguish the bond wires from the bulk material, and the properties of the material for diffusion bonding are not substantially different from the material for non-diffusion bonding of the blocks in terms of thermal conductivity and strength. Diffusion bonding can have some similarities to sintering. A thin silver coating of about a few microns can also be used to facilitate the ease of bonding of the layers. The latter process can have some similarities to soldering.

片語「直接安裝」大體上指代無實質介入層及/或阻熱層被引入到經附接或固定之兩個事物之間的安裝。在一實施例中,將一LED陣列安裝至由具有一薄焊料層的微通道冷卻器之表面提供的共同陽極基板。此為意欲由片語「直接安裝」包含之內容的實例。因此,LED陣列將被視為直接安裝至該共同陽極基板。阻熱層之實例將包括引入於經附接或固定之兩個事物之間的塊體基板材料、箔、薄膜(介電或導電),或其他材料(不同於薄焊料層)。 The phrase "direct mounting" generally refers to the installation of a non-substantially intervening layer and/or a thermal barrier layer introduced between two things that are attached or fixed. In one embodiment, an array of LEDs is mounted to a common anode substrate provided by the surface of a microchannel cooler having a thin solder layer. This is an example of what is intended to be included in the phrase "Direct Installation". Therefore, the LED array will be considered to be mounted directly to the common anode substrate. Examples of thermal barrier layers will include bulk substrate materials, foils, films (dielectric or conductive), or other materials (other than a thin solder layer) that are introduced between two things that are attached or fixed.

片語「高照射度」大體上指代大於4 W/cm2之照射度。根據本發明之實施例,可達成之峰值照射度位準超過當前最新技術水準之UV LED固化系統之位準約一個數量級至幾個數量級,同時維持LED之高效率及長壽命。如下文進一步描述,根據各種實施例,工件上之照射度實質上無可見於當前UV LED固化系統中之不利像素化及/或間隙。同時,請注意,多數UV LED燈製造商在窗處量測峰值照射度,而在本文中所描述之各種實施例中係在工件表面處量 測。在窗處進行之量測基本上無意義,此係因為工件通常並非位於窗處。 The phrase "high illuminance" generally refers to an irradiance greater than 4 W/cm 2 . According to an embodiment of the present invention, the level of peak illumination that can be achieved exceeds the current state of the art UV LED curing system by about one order of magnitude to several orders of magnitude while maintaining high efficiency and long life of the LED. As further described below, according to various embodiments, the degree of illumination on the workpiece is substantially free of unfavorable pixelation and/or gaps that are visible in current UV LED curing systems. At the same time, please note that most UV LED lamp manufacturers measure peak illuminance at the window, while in various embodiments described herein, measurements are taken at the workpiece surface. The measurement taken at the window is essentially meaningless, since the workpiece is usually not located at the window.

片語「高填充因數LED陣列」大體上指代如下LED陣列,其中LED緊密地間隔且發光區域(作用區)超過LED陣列之面積(長度×寬度)的50%(通常超過90%)。取決於特定實施方案,一LED陣列之填充因數可大於60%,、70%、80%、90%或99%。在本發明之一實施例中,LED陣列內之LED間隔少於20微米(邊緣至邊緣)且在一些情況下為10微米(邊緣至邊緣),其中邊緣至邊緣距離之範圍為1微米至100微米(對於完全單片LED,可考慮零微米間距)。涵蓋無機LED以及實質上有機之LED。 The phrase "high fill factor LED array" generally refers to an array of LEDs in which the LEDs are closely spaced and the illuminated area (acting area) exceeds 50% (typically over 90%) of the area (length x width) of the LED array. The fill factor of an LED array can be greater than 60%, 70%, 80%, 90%, or 99%, depending on the particular implementation. In one embodiment of the invention, the LEDs within the LED array are spaced less than 20 microns (edge to edge) and in some cases 10 microns (edge to edge), with edge to edge distances ranging from 1 micron to 100 Micron (for fully monolithic LEDs, zero micron pitch can be considered). Covers inorganic LEDs and essentially organic LEDs.

片語「在一實施例中」、「根據一實施例」及其類似者大體上意謂跟在該片語後的特定特徵、結構或特性包括在本發明之至少一實施例中,及可包括在本發明之一個以上實施例中。重要地,此等片語未必指代同一實施例。 The phrase "in an embodiment", "in accordance with an embodiment", and the like, generally mean that a particular feature, structure, or characteristic that follows the phrase is included in at least one embodiment of the invention. Included in one or more embodiments of the invention. Importantly, such phrases are not necessarily referring to the same embodiment.

術語「照射度」大體上指代到達每單位面積表面之輻射功率(例如,瓦特或毫瓦每平方公分(W/cm2或mW/cm2))。 The term "irradiation" generally refers to the radiant power (e.g., watts or milliwatts per square centimeter (W/cm 2 or mW/cm 2 )) that reaches the surface per unit area.

片語「發光區域」大體上指代一發光裝置或陣列之作用區或磊晶區。 The phrase "light-emitting region" generally refers to the active or epitaxial region of a light-emitting device or array.

片語「發光裝置」大體上指代一或多個發光二極體(LED)(發射實質上不相干光)及/或雷射二極體(發射實質上相干光),無論其是邊緣發射器或是表面發射器。在本發明之各種實施例中,發光裝置可為經封裝晶粒或為裸晶粒。經封裝晶粒指代不僅由裸晶粒組成且通常亦由一基板 及通常用於附接透鏡及/或反射器之構件組成的裝置,晶粒安裝(通常錫焊)至該基板以促進用於電輸入及輸出電流路徑以及熱路徑的跡線,其實例將為購自美國Philips的Lexeon Rebel。裸發光裝置可具有一垂直結構或一水平結構且具有一導電基板或一非導電基板。根據一實施例,裸發光裝置晶粒(亦即,直接自具有磊晶生長p-n接面之晶圓切離的晶粒)直接(無額外顯著阻熱層)接合(通常錫焊)至高導熱性材料(選自銅、Glidcop、BeO、Si、GaN、AlN、Al2O3、Al、Au、Ag、石墨、鑽石及其類似者的群組)的至少一擴散接合層,在本發明之各種實施例中該擴散接合層本身通常為形成單片擴散接合微通道冷卻器結構的多層積層中的一層。因為接合製程可選自錫焊、硬焊、膠黏等,因此該積層未必經擴散接合。在其他實施例中,可使用一基台。LED包括覆晶式非線接合之LED、導電基板及非導電基板LED晶片(諸如,具有在藍寶石、氮化鋁、矽、氧化鋅或氮化鎵(GaN)上之EPI層的LED晶片)、陣列及/或封裝好之裝置。 The phrase "lighting device" generally refers to one or more light emitting diodes (LEDs) that emit substantially incoherent light and/or a laser diode that emits substantially coherent light, whether it is edge emitting. Or surface emitter. In various embodiments of the invention, the light emitting device can be a packaged die or a bare die. The encapsulated die refers to a device that is composed not only of bare die but also typically consists of a substrate and components typically used to attach the lens and/or reflector, die mounted (usually soldered) to the substrate to facilitate use. Examples of electrical input and output current paths and traces of thermal paths will be available from Lexeon Rebel, Philips, USA. The bare light emitting device may have a vertical structure or a horizontal structure and have a conductive substrate or a non-conductive substrate. According to an embodiment, the bare illuminator die (ie, the die cut directly from the wafer having the epitaxially grown pn junction) is directly bonded (typically soldered) to high thermal conductivity (without additional significant thermal resistance) At least one diffusion bonding layer of a material (selected from the group of copper, Glidcop, BeO, Si, GaN, AlN, Al 2 O 3 , Al, Au, Ag, graphite, diamond, and the like), in various aspects of the invention The diffusion bonding layer itself in the embodiment is typically one of the multilayer laminates that form a monolithic diffusion bonded microchannel cooler structure. Since the bonding process can be selected from soldering, brazing, gluing, etc., the buildup is not necessarily diffusion bonded. In other embodiments, a base station can be used. LEDs include flip-chip non-wire bonded LEDs, conductive substrates, and non-conductive substrate LED wafers (such as LED chips with EPI layers on sapphire, aluminum nitride, tantalum, zinc oxide, or gallium nitride (GaN)), Arrays and/or packaged devices.

片語「發光二極體」或縮寫「LED」大體上指代含有經設計以經由被稱作電致發光之過程來發射在電磁波譜內之特定窄帶波長的p-n接面(在p型半導體與n型半導體之間的接面)的半導體裝置。在一實施例中,LED發射不相干光。 The phrase "light emitting diode" or "LED" generally refers to a pn junction containing a specific narrowband wavelength that is designed to emit within the electromagnetic spectrum via a process known as electroluminescence (in p-type semiconductors and A semiconductor device of a junction between n-type semiconductors. In an embodiment, the LED emits incoherent light.

片語「低填充因數LED陣列」大體上指代LED稀疏地配置且不超過LED陣列之表面積的約50%之LED陣列。 The phrase "low fill factor LED array" generally refers to an LED array that is sparsely configured with LEDs and does not exceed about 50% of the surface area of the LED array.

片語「低照射度」大體上指代約20 W/cm2或更小之照射 度。額定值小於4 W/cm2之UV LED系統通常不足以用於除固定(例如,墨水凝固)以外的多數固化應用。 The phrase "low illuminance" generally refers to an illuminance of about 20 W/cm 2 or less. UV LED systems rated less than 4 W/cm 2 are generally not sufficient for most curing applications except for fixed (eg, ink solidification).

術語「巨型反射器」大體上指代具有大於或等於5 mm之高度的反射器。在一些實施例中,巨型反射器可在5 mm至100 mm以上之範圍內。 The term "giant reflector" generally refers to a reflector having a height greater than or equal to 5 mm. In some embodiments, the giant reflector can be in the range of 5 mm to over 100 mm.

術語「光功率密度」大體上指代每單位面積光功率之量測值。光功率密度之一量測值可藉由量測一LED陣列之光子發射區域之表面處的光功率且判定該LED陣列之光子發射區域與非光子發射區域(死區)之比率來判定。在一實施例中,在LED陣列之發射表面處的光功率密度為至少100 W/cm2。取決於特定實施方案,光功率密度可在1 W/mm2至10 W/mm2之範圍內。 The term "optical power density" generally refers to the measurement of optical power per unit area. One of the optical power density measurements can be determined by measuring the optical power at the surface of the photon emitting region of an LED array and determining the ratio of the photon emitting region to the non-photon emitting region (dead region) of the LED array. In an embodiment, the optical power density at the emitting surface of the LED array is at least 100 W/cm 2 . The optical power density may range from 1 W/mm 2 to 10 W/mm 2 depending on the particular implementation.

若本說明書陳述「可」、「能」或「可能」包括一組件或特徵或一組件或特徵「可」、「能」或「可能」具有一特性,則不需要包括彼特定組件或特徵或彼特定組件或特徵不需要具有該特性。 If the statement states that "may", "energy" or "may" include a component or feature or a component or feature "may", "can" or "may" have a characteristic, it is not necessary to include a particular component or feature or This feature is not required for a particular component or feature.

片語「經圖案化之電路材料層」大體上指代如下導電材料層,其通常含有選自銅、銀、金、鈦、鎢、鎳之群組的金屬且亦可含有導電聚合物,該等導電聚合物係圖案化(例如,直接或經由微影手段)至基板(例如,陶瓷、介電質、半導體及/或聚合物)上的。 The phrase "patterned circuit material layer" generally refers to a layer of conductive material that typically contains a metal selected from the group consisting of copper, silver, gold, titanium, tungsten, nickel, and may also contain a conductive polymer. The isoelectric polymer is patterned (eg, directly or via lithographic means) onto a substrate (eg, ceramic, dielectric, semiconductor, and/or polymer).

片語「峰值照射度」大體上指代跨越投射於工件上之輸出射束圖案的寬度的最大照射度值。在本發明之實施例中,在距窗2 mm處,一UV LED燈頭模組可達成約84 W/cm2之峰值照射度(範圍係50 W/cm2至100 W/cm2)。在本發明之實施例中,在距窗53 mm處,一UV LED燈頭模組可達成約24 W/cm2之峰值照射度(範圍係10 W/cm2至50 W/cm2)。 The phrase "peak illuminance" generally refers to the maximum illuminance value across the width of the output beam pattern projected onto the workpiece. In an embodiment of the invention, a UV LED lamp head module achieves a peak illumination of about 84 W/cm 2 (range 50 W/cm 2 to 100 W/cm 2 ) at a distance of 2 mm from the window. In an embodiment of the invention, a UV LED lamp head module achieves a peak illumination of about 24 W/cm 2 (ranging from 10 W/cm 2 to 50 W/cm 2 ) at a distance of 53 mm from the window.

片語「輻射能量密度」、「總輸出功率密度」或「能量密度」大體上指代到達每單位面積表面的能量(例如,焦耳或毫焦耳每平方公分(J/cm2或mJ/cm2))。 The phrase "radiation energy density", "total output power density" or "energy density" generally refers to the energy reaching the surface per unit area (eg, joules or millijoules per square centimeter (J/cm 2 or mJ/cm 2 ). )).

術語「回應」包括完全回應或部分回應。 The term "response" includes a full response or a partial response.

片語「頂帽射束橫截面量變曲線」、「頂帽量變曲線」及其類似者大體上指代一射束量變曲線,在投影至工件上時,該射束量變曲線將均一強度之輪廓分明之點施加至工件上且使得在正加工之工件上能實現清晰且準確之轉變。頂帽量變曲線亦可為不對稱的。舉例而言,在陡峭之邊界之間,可存在正或負之斜率,或在該等陡峭之邊界之間可存在多個峰及谷。 The phrase "top hat beam cross-section variability curve", "top cap variability curve" and the like generally refer to a beam variability curve which, when projected onto a workpiece, will have a uniform intensity profile. A distinct point is applied to the workpiece and enables a clear and accurate transition on the workpiece being machined. The top cap volume change curve can also be asymmetrical. For example, there may be a positive or negative slope between steep boundaries, or there may be multiple peaks and valleys between the steep boundaries.

片語「頂帽照射度工件圖案」、「頂帽圖案」及其類似者大體上指代在工件上之一照射度圖案,在該照射度圖案中,較高之照射度值在某距離內為均一的,其中隨著照射度向較低或可忽略之值減小而在任一側上具有陡峭之邊界。此種情況為與典型高斯或平滑錐形圖案相比較的,在典型高斯或平滑錐形圖案中,照射度自中心峰值更平滑地下降。 The phrase "top hat illuminating workpiece pattern", "top hat pattern" and the like generally refer to an illuminance pattern on a workpiece in which a higher illuminance value is within a certain distance. Uniform, with sharp edges on either side as the irradiance decreases toward a lower or negligible value. This is compared to a typical Gaussian or smooth tapered pattern in which the illumination decreases more smoothly from the center peak.

片語「總輸出功率」大體上指代以每公分輸出射束圖案長度之瓦特數為單位的彙集功率。根據一實施例,在距窗 2 mm處,每一UV LED燈頭模組產生每公分之輸出射束圖案長度約20.5 W的總輸出功率。根據一實施例,在距窗53 mm處,每一UV LED燈頭模組產生每公分之輸出射束圖案長度約21.7 W的總輸出功率。 The phrase "total output power" generally refers to the aggregate power in watts per metric output beam pattern length. According to an embodiment, in the window At 2 mm, each UV LED lamp head module produces a total output power of approximately 20.5 W per cm of the output beam pattern length. According to one embodiment, each UV LED lamp head module produces a total output power of about 21.7 W per cm of output beam pattern length 53 mm from the window.

片語「超高照射度」大體上指代工件處大於50 W/cm2之照射度。在一實施例中,UV LED燈頭模組在短工作距離(例如,~2 mm,範圍係0.1 mm至10 mm)處可達成大於100 W/cm2之峰值照射度。鑒於LED之快速提昇之功率輸出及效率,有理由預期可達成之峰值照射度在未來數十年內改良超過一個數量級。因此,現今之高照射度應用中之一些將藉由空氣冷卻式LED陣列來實現,且其他應用將利用此等較高照射度或由於此等較高照射度而實現以獲得更快、更硬或更完全之固化及/或使用較少光引發劑。在本發明之各種實施例的內容背景中,獨特之處亦為提供超高峰值照射度、超高平均照射度、超高總照射度(劑量)及遞送至工件之劑量的濃度(如與先前技術相比)的能力。 The phrase "ultra-high irradiance" generally refers to an illumination of greater than 50 W/cm 2 at the workpiece. In one embodiment, the UV LED lamp head module achieves a peak illumination of greater than 100 W/cm 2 at short working distances (eg, ~2 mm, ranging from 0.1 mm to 10 mm). Given the rapidly increasing power output and efficiency of LEDs, it is reasonable to expect that the achievable peak illumination will improve by more than an order of magnitude over the next few decades. Therefore, some of today's high-illumination applications will be implemented with air-cooled LED arrays, and other applications will use these higher irradiances or due to such higher irradiance to achieve faster, harder More or more curing and / or use less photoinitiator. In the context of the various embodiments of the present invention, it is also unique to provide ultra-high peak illumination, ultra-high average illumination, ultra-high total illumination (dose), and concentration delivered to the workpiece (eg, prior to The ability of technology compared to).

片語「UV固化製程」大體上指代光引發劑(PhI)將首先吸收UV光從而使其進入激發態的製程。PhI將自激發態分解成自由基,該等自由基接著開始光聚合。然而,在UV可固化調配物中總是存在一定量的氧(1 mM至2 mM)。因此,來自PhI光分解之初始自由基將首先與氧反應,而非與(通常為丙烯酸酯)單體之雙鍵反應,此係因為PhI自由基與氧之反應速率比與丙烯酸酯雙鍵之反應速率快約105至106倍。此外,在UV固化之極早期,空氣中之氧亦將擴散 至固化膜中且亦與PhI反應,此導致主要的氧抑制。僅在消耗了UV可固化膜中之氧後才可發生光引發之聚合。因此,為了克服氧抑制,在極短之時段內在固化膜之表面處需要大量自由基;亦即,需要高強度之UV光源。特定調配物對UV光強度之吸收取決於UV光波長。在數學上,被吸收之UV光強度(Ia)由Ia=I0×[PhI]給出,其中I0為來自UV光源之UV光強度,且[PhI]為光引發劑濃度。在相同[PhI]含量下,增加I0將增加Ia,且藉此減少氧抑制。換言之,藉由使用高I0光源可使用較少[PhI],[PhI]通常為調配物之最昂貴部分。UV光之吸收遵照熟知之朗伯-比耳定律:A(吸收)=€cd,其中€為PhI消光或吸收係數,c為PhI之濃度,且d為樣本(待固化之膜)的厚度。如自下表看出,PhI光吸收之效率隨波長而大幅變化。在此種情況下,在254 nm下,吸收光之效率比在405 nm下之光吸收效率高20倍。因此,若可以較短波長下之典型固化功率(~100 W/cm2)的100倍提供400 nm下之UV LED光強度,則光引發劑在光吸收方面之效率差可減少氧抑制。 The phrase "UV curing process" generally refers to a process in which a photoinitiator (PhI) will first absorb UV light to cause it to enter an excited state. PhI breaks down the self-excited state into free radicals, which then begin photopolymerization. However, a certain amount of oxygen (1 mM to 2 mM) is always present in the UV curable formulation. Therefore, the initial free radical from PhI photodecomposition will first react with oxygen rather than with the double bond of the (usually acrylate) monomer, because the reaction rate of PhI radicals with oxygen is higher than that of acrylate double bonds. The reaction rate is about 105 to 106 times faster. In addition, in the very early days of UV curing, oxygen in the air will also diffuse into the cured film and also react with PhI, which leads to major oxygen inhibition. Photoinitiated polymerization can occur only after the oxygen in the UV curable film is consumed. Therefore, in order to overcome the oxygen suppression, a large amount of radicals are required at the surface of the cured film in a very short period of time; that is, a high-intensity UV light source is required. The absorption of UV light intensity by a particular formulation depends on the wavelength of the UV light. Mathematically, the absorbed UV light intensity (Ia) is given by Ia = I0 x [PhI], where I0 is the UV light intensity from the UV source and [PhI] is the photoinitiator concentration. At the same [PhI] content, increasing I0 will increase Ia and thereby reduce oxygen inhibition. In other words, less [PhI] can be used by using a high I0 source, which is usually the most expensive part of the formulation. The absorption of UV light follows the well-known Lambert-Beier law: A (absorption) = €cd, where € is the PhI extinction or absorption coefficient, c is the concentration of PhI, and d is the thickness of the sample (the film to be cured). As seen from the table below, the efficiency of PhI light absorption varies greatly with wavelength. In this case, at 254 nm, the efficiency of absorbing light is 20 times higher than that at 405 nm. Therefore, if the UV LED light intensity at 400 nm can be provided at 100 times the typical curing power (~100 W/cm 2 ) at a shorter wavelength, the poor efficiency of the photoinitiator in terms of light absorption can reduce oxygen inhibition.

1.95×104,在254 nm下,1.8×104,在302 nm下,1.5×104,在313 nm下,2.3×103,在365 nm下,8.99×102,在405 nm下;圖2A至圖2C分別提供根據本發明之實施例的超高亮度UV LED燈頭模組200的等角視圖、正視圖及側視圖。根據 一實施例,超高亮度UV LED燈頭模組200產生超高照射度。超高亮度UV LED燈頭模組200可用以光聚合或固化墨水、塗層、黏著劑及其類似者。取決於應用,可形成一UV固化系統(LED UV發射系統)(圖中未展示),其包含一或多個UV LED燈頭模組200及其他組件,該等其他組件包括但不限於LED驅動器(在UV LED燈頭模組200內部或外部)、一或多個冷卻系統、一或多個主要AC/DC電力供應系統(例如,可購自Lineage(現為紐約尼斯卡於納(Niskayuna,NY)之GE的分公司)或美國Power-One,其具有約90%(或甚至約97%)的效率且重約1 kg)、一或多個控制模組、一或多個電纜及一或多個連接器(圖中未展示)。 1.95 × 104, at 254 nm, 1.8 × 104, at 302 nm, 1.5 × 104, at 313 nm, 2.3 × 103, at 365 nm, 8.99 × 102, at 405 nm; Figure 2A to 2C An isometric view, a front view, and a side view of an ultra-high brightness UV LED lamp head module 200 in accordance with an embodiment of the present invention are provided, respectively. according to In one embodiment, the ultra-high brightness UV LED lamp head module 200 produces ultra-high illumination. The ultra-high brightness UV LED lamp head module 200 can be used to photopolymerize or cure inks, coatings, adhesives, and the like. Depending on the application, a UV curing system (LED UV emission system) (not shown) may be formed that includes one or more UV LED lamp head modules 200 and other components including, but not limited to, LED drivers ( One or more cooling systems, one or more primary AC/DC power supply systems within the UV LED base module 200 (eg, available from Lineage (now Niskayuna, NY) GE's branch office) or US Power-One, which has approximately 90% (or even about 97%) efficiency and weighs approximately 1 kg), one or more control modules, one or more cables, and one or more Connectors (not shown).

根據一實施例,UV LED燈頭模組200之高亮度允許輸出射束(圖中未展示)之一系列可能光學性質,包括:窄寬度(例如,~0.65 cm(範圍係0.1 cm至2 cm))及高功率密度(例如,~20.5 W每公分輸出射束圖案長度(範圍係10 W至30 W)),較寬寬度(例如,~3.65 cm(範圍係3 cm至10 cm)及較大焦點深度,或短或長工作距離(具有或不具有較大焦點深度),或甚至極寬之角度/大面積射束輸出圖案(具有或不具有較大焦點深度)。可考慮跨越射束圖案之寬度(以及射束圖案之長度)具有均勻照射度(例如,頂帽)之輸出射束圖案以及具有不對稱照射度之輸出射束圖案。 According to an embodiment, the high brightness of the UV LED lamp head module 200 allows for a series of possible optical properties of the output beam (not shown), including: narrow width (eg, ~0.65 cm (range 0.1 cm to 2 cm)) And high power density (for example, ~20.5 W per cm output beam pattern length (range 10 W to 30 W)), wider width (for example, ~3.65 cm (range 3 cm to 10 cm) and larger) Focus depth, or short or long working distance (with or without a large depth of focus), or even an extremely wide angle/large area beam output pattern (with or without a large depth of focus). Consider crossing beam patterns The width (and the length of the beam pattern) has an output beam pattern with uniform illumination (eg, top hat) and an output beam pattern with asymmetric illumination.

如下文進一步論述,根據本發明之實施例,高亮度由高填充因數(超過50%且通常超過90%)LED陣列(圖中未展示)導致,且LED陣列係在高電功率密度下操作,此導致高照 射度的輸出射束。高電功率密度導致經由下文詳細描述之各種新穎方法有效地管理的高熱密度(歸因於電光轉換損失)。 As discussed further below, in accordance with embodiments of the present invention, high brightness is caused by a high fill factor (more than 50% and typically more than 90%) LED array (not shown), and the LED array operates at high electrical power densities, Lead to high light The output beam of the radiance. The high electrical power density results in a high thermal density (due to electro-optical conversion losses) that is effectively managed via various novel methods described in detail below.

最終,歸因於高亮度光源允許的獨特的高照射度及靈活的光學輸出射束性質,UV LED燈頭模組200意欲不僅替換當前最新技術水準之UV LED燈,且亦替換當前最新技術水準之汞燈。因為UV LED燈頭模組200不含有汞,且在電學上亦極有效率,因此其亦被視為「綠色技術」。此效率部分得自LED之與含汞之燈相比的固有效率,且亦部分得自在下文描述的冷卻方法,該等冷卻方法提供在LED接面與冷卻流體(經由入口冷卻管203引入至UV LED燈頭模組200且經由出口冷卻管204自UV LED燈頭模組200抽出)之間的極低熱阻,藉此產生LED裝置之高效及長壽命之操作所需的低接面溫度。 Ultimately, due to the unique high illumination and flexible optical output beam properties allowed by high brightness sources, the UV LED lamp head module 200 is intended to replace not only the current state of the art UV LED lamps, but also to replace current state of the art technology. Mercury lamp. Because the UV LED lamp head module 200 does not contain mercury and is electrically efficient, it is also considered "green technology." This efficiency is derived in part from the inherent efficiency of the LED compared to mercury-containing lamps, and is also derived in part from the cooling methods described below, which are provided at the LED junction and cooling fluid (via the inlet cooling tube 203 to the UV) The extremely low thermal resistance between the LED lamp head module 200 and the UV LED lamp head module 200 via the outlet cooling tube 204, thereby creating the low junction temperature required for efficient and long life operation of the LED device.

在此描繪中,說明UV LED燈頭模組200之外殼202及反射器201。根據各種實施例,UV LED燈頭模組200之外殼202為約80 mm(長度)×38 mm(寬度)×125 mm(高度)。針對給定應用而選擇的新穎之易調換且現場可替換之反射器201的長度將實質上在幾十至幾百毫米之長度範圍中,但此等反射器之長度通常為約100 mm,且提供在0至1000 mm之範圍中的工作距離,但通常在2 mm至65 mm之間(2 mm及65 mm包括在內)。 In this depiction, the outer casing 202 and reflector 201 of the UV LED base module 200 are illustrated. According to various embodiments, the outer casing 202 of the UV LED base module 200 is about 80 mm (length) x 38 mm (width) x 125 mm (height). The length of the novel, easily interchangeable and field replaceable reflector 201 selected for a given application will be substantially in the range of tens to hundreds of millimeters in length, but the length of such reflectors will typically be about 100 mm, and Working distances from 0 to 1000 mm are available, but are usually between 2 mm and 65 mm (2 mm and 65 mm included).

根據本發明之實施例,UV LED燈頭模組200經設計以單獨地使用或與一或多個其他UV LED燈頭模組組合而串聯 地使用。如下文進一步描述,易於在長度上串聯組態多個UV LED燈頭模組200,自一個燈頭(模組)(例如,80 mm)至可能100個燈頭(模組)(例如,長度為8,000 mm)。亦可在寬度上串聯地組態多個UV LED燈頭模組200。根據一實施例,UV LED燈頭模組200之長度方向串聯組合的獨特特徵在於,甚至在短工作距離(例如,~2 mm)應用中,輸出射束亦不含有在每一界面點處實質上可辨別之照射度損失,在該界面點處燈頭(模組)端對端地串聯地彼此相抵以在工件表面處形成長輸出射束圖案。 In accordance with an embodiment of the present invention, the UV LED lamp head module 200 is designed to be used alone or in combination with one or more other UV LED lamp head modules. Use. As further described below, it is easy to configure multiple UV LED lamp head modules 200 in series over a length, from one base (module) (eg, 80 mm) to possibly 100 bases (modules) (eg, 8,000 mm in length) ). A plurality of UV LED lamp head modules 200 can also be configured in series across the width. According to an embodiment, the unique combination of the lengthwise combination of the lengths of the UV LED lamp head module 200 is that even in short working distance (eg, ~2 mm) applications, the output beam does not contain substantially at each interface point. The illuminance loss can be discerned, at which point the caps (modules) end-to-end in series with each other to form a long output beam pattern at the surface of the workpiece.

如下文更詳細描述,在一實施例中,反射器201為工廠可調換的且較佳亦為現場可替換的。反射器201可由鋁及經拋光、澆鑄、擠製的金屬性或聚合物等來加工成,或經射出模製。反射器201可具有銀塗層且可具有塗層之介電堆疊。反射器201可具有使用沈積製程(例如,ALD、CVD、濺鍍、蒸鍍、溶膠凝膠)的單層保護性介電塗層。反射器201可經機械或電解拋光。預期,在長長度應用(如同寬格式印刷)中通常可需要端對端地置放多個UV LED燈頭模組200。在此等情況下,需要由反射器201產生的經投射及/或聚焦之射束沿整個射束路徑具有幾乎均一之照射度,尤其在端對端組態之UV LED燈頭模組200及/或LED陣列之間的區域中,以便均一地固化工件之塗層、墨水、黏著劑等。應注意,歸因於由本發明之實施例提供的高照射度,塗層及墨水等中可具有大為減少之光引發劑或基本上無光引發劑,且在與電子射束類似之物質中固化,其中供 應足夠劑量之電磁能量以在無任何可感知之光引發劑的輔助下固化材料。 As described in more detail below, in one embodiment, the reflector 201 is factory replaceable and preferably also field replaceable. The reflector 201 may be processed from aluminum and polished, cast, extruded metal or polymer, or the like, or injection molded. The reflector 201 can have a silver coating and can have a dielectric stack of coatings. The reflector 201 can have a single layer of protective dielectric coating using a deposition process (eg, ALD, CVD, sputtering, evaporation, sol gel). The reflector 201 can be mechanically or electrolytically polished. It is contemplated that in long length applications (like wide format printing) it may be desirable to place multiple UV LED lamp head modules 200 end to end. In such cases, the projected and/or focused beam generated by the reflector 201 is required to have an almost uniform illumination along the entire beam path, particularly in the end-to-end configuration of the UV LED lamp head module 200 and/or Or in the region between the LED arrays to uniformly cure the coating of the workpiece, ink, adhesive, and the like. It should be noted that due to the high degree of illumination provided by embodiments of the present invention, there may be a greatly reduced photoinitiator or substantially no photoinitiator in the coating and ink, and the like, and in a substance similar to an electron beam. Curing, where A sufficient dose of electromagnetic energy should be used to cure the material without the aid of any appreciable photoinitiator.

在各種實施例中,UV LED燈頭模組200之照射度在諸如噴墨印刷之短工作距離(例如,~2 mm)應用中可超過100 W/cm2,在諸如透明塗層固化之長工作距離(例如,50 mm以上)應用中超過25 W/cm2。根據一實施例,為滿足各種應用及操作條件,射束寬度可在約1 mm寬至100 mm寬或更寬的範圍內變化,且如先前所述,長度可與一個燈頭(模組)之寬度(例如,80 mm)一樣短到與100個燈頭(模組)(例如,8,000 mm)一樣長或更長。請注意,射束之長度可短於UV LED燈頭模組200之長度(若聚焦反射器或光學器件被如此使用以實現此射束形狀)。亦可考慮彎曲或延伸之端蓋。亦涵蓋外部折射或繞射光學器件。取決於特定實施,UV LED燈頭模組200之長度可在幾十毫米至幾百毫米的長度範圍內。LED可在約0.3 mm2至4 mm2或更多的範圍內,且其可為矩形的、按單長列、多長列定向或為單片的。 In various embodiments, the illumination of the UV LED lamp head module 200 can exceed 100 W/cm 2 in short working distances (eg, ~2 mm) such as inkjet printing, in long work such as clear coating curing. More than 25 W/cm 2 in applications (eg, above 50 mm). According to an embodiment, the beam width may vary from about 1 mm wide to 100 mm wide or wider to meet various applications and operating conditions, and as previously described, the length may be associated with a base (module) The width (for example, 80 mm) is as short as 100 heads (modules) (for example, 8,000 mm). Note that the length of the beam can be shorter than the length of the UV LED lamp head module 200 (if a focusing reflector or optics is used as such to achieve this beam shape). End caps that are bent or extended may also be considered. External refraction or diffractive optics are also covered. Depending on the particular implementation, the length of the UV LED lamp head module 200 can range from a few tens of millimeters to a few hundred millimeters. The LEDs can range from about 0.3 mm 2 to 4 mm 2 or more, and they can be rectangular, oriented in a single long column, long columns, or monolithic.

根據本發明之實施例,圖3A之LED陣列330之效率通常完全超過10%至20%,且總系統效率(包括熱交換器或冷凍器、泵及電源供應器損失)通常完全超過5%至10%。在將來,預期超過50%之效率。 In accordance with embodiments of the present invention, the efficiency of the LED array 330 of Figure 3A is typically well over 10% to 20%, and total system efficiency (including heat exchanger or chiller, pump and power supply losses) is typically over 5% to 10%. In the future, more than 50% efficiency is expected.

短暫地返回至入口冷卻管203及出口冷卻管204,此等管可由(例如)擠製聚胺基甲酸酯、乙烯酯、PVC(可購自美國Hudson Extrusions)及其類似者建構,且可為~5/16吋ID及 ~7/16吋OD。在一實施例中,管203及204為具有高抗張強度及低吸濕性的聚胺基甲酸酯。可使用可購自美國Swagelok之管配件或購自美國John Guest之配件。取決於使用環境,可較佳使用一個以上之入口冷卻管203及出口冷卻管204,諸如可能~4條較小入口管線及~4條較小出口管線(圖中未展示)。此可有助於具有較小彎曲半徑的較不笨重之單元,且可允許經由微通道冷卻器(圖中未展示)的稍微更均勻分佈的冷卻劑流動;然而,UV LED燈頭模組200內的深的主要入口及出口通道(圖中未展示)基本上消除了在進出較佳微通道冷卻器通道(圖中未展示)之點處的壓力梯度。在一實施例中,冷卻劑經由入口冷卻管203在1 PSI至100 PSI之間且較佳在約15 PSI至20 PSI之間在約攝氏5度(C)至攝氏50度之間且較佳為約攝氏20度的溫度下進入UV LED燈頭模組200,且經由出口冷卻管204在約攝氏10度至攝氏100度之間且較佳為約攝氏24度的溫度下離開。 Return briefly to the inlet cooling tube 203 and the outlet cooling tube 204, which may be constructed, for example, by extrusion of polyurethane, vinyl ester, PVC (available from Hudson Extrusions, USA), and the like, and may be For ~5/16吋ID and ~7/16吋OD. In one embodiment, tubes 203 and 204 are polyurethanes having high tensile strength and low moisture absorption. Pipe fittings available from Swagelok, USA, or accessories available from John Guest, USA, may be used. Depending on the environment of use, more than one inlet cooling tube 203 and outlet cooling tube 204 may be preferably used, such as ~4 smaller inlet lines and ~4 smaller outlet lines (not shown). This may facilitate less bulky cells with smaller bend radii and may allow for a slightly more evenly distributed coolant flow through the microchannel cooler (not shown); however, within the UV LED lamp head module 200 The deep main inlet and outlet channels (not shown) substantially eliminate the pressure gradient at the point of entry into the preferred microchannel cooler channel (not shown). In an embodiment, the coolant is between 1 PSI and 100 PSI, and preferably between about 15 PSI and 20 PSI, between about 5 degrees Celsius (C) and 50 degrees Celsius, preferably between 1 PSI and 100 PSI. The UV LED lamp head module 200 is entered at a temperature of about 20 degrees Celsius and exits via an outlet cooling tube 204 at a temperature of between about 10 degrees Celsius and 100 degrees Celsius, and preferably about 24 degrees Celsius.

根據一實施例,來自UV固化系統之各種內部組件(例如,LED驅動器PCB及LED陣列)的廢熱可耗散至燈體(圖中未展示)中且由至熱交換器及/或冷凍器之冷卻劑流帶走。例示性冷凍器可購自美國Whaley。在一實施例中,冷凍器利用高效率之渦捲式壓縮機(可購自美國Emmerson)。取決於使用模型,冷凍器可為「分裂」型的,其中儲集器、泵、蒸發器及控制器件位於容納UV固化系統之建築物內部,且剩餘組件(諸如,渦捲式壓縮機、風扇、冷凝器等)位於建築物外部(例如,在建築物之屋頂上或在建築 物之邊上)。請注意,針對一或多個UV LED燈頭模組200及/或供應組件,冷凍器或熱交換器組件中之許多或所有可串聯或並聯或以其兩者之組合來操作。舉例而言,一大型冷凍器可用於可能具有一或多個泵及或儲集器的多個UV固化系統。例示性的水至空氣的熱交換器元件可購自美國Lytron。任何冷卻解決方案可使用旁路配置,以便不同之壓力或流率可同時經過蒸發器及微通道冷卻器。 According to an embodiment, waste heat from various internal components of the UV curing system (eg, LED driver PCB and LED array) may be dissipated into the lamp body (not shown) and from the heat exchanger and/or the freezer The coolant flow is taken away. An exemplary freezer is available from Whaley, USA. In one embodiment, the freezer utilizes a high efficiency scroll compressor (available from Emmerson, USA). Depending on the model used, the freezer can be of the "split" type, where the reservoir, pump, evaporator and control device are located inside the building housing the UV curing system, and the remaining components (such as scroll compressors, fans) , condenser, etc.) located outside the building (for example, on the roof of a building or in a building On the edge of the object). Note that for one or more of the UV LED lamp head modules 200 and/or supply assemblies, many or all of the chiller or heat exchanger assemblies can be operated in series or in parallel or a combination of both. For example, a large freezer can be used for multiple UV curing systems that may have one or more pumps and or reservoirs. Exemplary water to air heat exchanger elements are commercially available from Lytron, USA. Any cooling solution can use a bypass configuration so that different pressures or flow rates can pass through both the evaporator and the microchannel cooler.

根據一實施例,冷卻液體(冷卻劑)包含水。冷卻劑亦可含有一或多種生物污垢抑制劑、殺真菌劑、腐蝕抑制劑、防凍材料(例如,乙二醇)及/或奈米顆粒(例如,氧化鋁、鑽石、陶瓷、金屬(例如,奈米銅)、聚合物或某組合)以達成增強之熱傳遞,且冷卻劑系統可含有膜片收縮器、吸氧器及微過濾器。奈米顆粒(諸如,二氧化鈦)由UV燈能量激發,以達成以下雙重目的:增強導熱性及/或熱傳遞,且歸因於所得光芬頓(Photo-Fenton)過程而消除生物物質(諸如,真菌及其類似者)。膜片收縮器有效地減少水中之CO2且有助於維持最佳pH值以獲得銅微通道表面之最佳耐蝕性。 According to an embodiment, the cooling liquid (coolant) comprises water. The coolant may also contain one or more biofouling inhibitors, fungicides, corrosion inhibitors, antifreeze materials (eg, ethylene glycol), and/or nanoparticles (eg, alumina, diamonds, ceramics, metals (eg, Nano copper), polymer or some combination) to achieve enhanced heat transfer, and the coolant system can contain a membrane retractor, an oxygen absorber, and a microfilter. Nanoparticles, such as titanium dioxide, are excited by UV lamp energy to achieve the dual purpose of enhancing thermal conductivity and/or heat transfer and eliminating biological material due to the resulting Photo-Fenton process (eg, Fungi and the like). The diaphragm retractor effectively reduces CO 2 in the water and helps maintain optimum pH to achieve optimum corrosion resistance of the copper microchannel surface.

在一實施例中,可使用滑翼泵(可購自義大利Fluidotech)。滑翼泵具有大於~4 GPM之流率及高達~60 PSI之壓力。此流率非常適合於接合本發明之各種實施例描述的微通道冷卻器架構(例如,4個或4個以上之80 mm UV LED燈頭模組200的串聯連接)。該泵亦極其安靜、緊密、耐用及高效率(因為其僅消耗~0.25 KW)。在各種實施例中,冗餘的冷卻 劑泵可用以減少單故障點之機會。平均流率可為每燈頭約0.75 GPM(範圍係0.1 GPM至10 GPM)。 In an embodiment, a flap pump (available from Italian Fluidotech) can be used. The vane pump has a flow rate greater than ~4 GPM and a pressure of up to ~60 PSI. This flow rate is well suited for joining the microchannel cooler architecture described in various embodiments of the present invention (e.g., a series connection of four or more 80 mm UV LED lamp head modules 200). The pump is also extremely quiet, compact, durable and efficient (since it consumes only ~0.25 KW). In various embodiments, redundant cooling The agent pump can be used to reduce the chance of a single point of failure. The average flow rate can be about 0.75 GPM per head (range 0.1 GPM to 10 GPM).

圖3A至圖3B提供圖2A之UV LED燈頭模組200的剖示圖。自此等視圖,可看出,包含反射器201之光學反射器層350被安裝至包圍於外殼202內之本體305。根據一實施例,本體305係由銅或介電聚合物材料(例如,PEEK;Torlon;LCP;丙烯酸系樹脂;聚碳酸酯;潛在地填充有填充劑(諸如,石墨、陶瓷、金屬、碳、碳奈米管、石墨烯、奈米大小或微米大小之薄片、管、纖維等)之PPS)建構。此等填充樹脂中之一些可購自Cool Polymers(North Kingstown,RI)。燈體305可藉由5軸銑削來加工或射出模製。或者,本體305可經射出模製且視情況經二次銑削或鑽孔。如下文進一步描述,各種組件可直接或間接地安裝至本體305,該等組件包括(但不限於)外殼202、反射器201、LED陣列330、微通道冷卻器(較佳地形成LED陣列330之共同陽極基板之部分)、陰極爪321及陽極匯流排體315a-b,以及一或多個LED驅動器印刷電路板(PCB)310,該一或多個LED驅動器印刷電路板(PCB)310較佳為金屬芯PCB(MCPCB)且陽極匯流排體315a-b可充當MCPCB之金屬芯(亦稱作,共同陽極底板)。經模製或膠黏之導熱墊可插入於MCPCB與在燈體之外側壁中流動之冷卻劑之間。 3A-3B provide a cross-sectional view of the UV LED lamp head module 200 of FIG. 2A. From this view, it can be seen that the optical reflector layer 350 comprising the reflector 201 is mounted to the body 305 that surrounds the outer casing 202. According to an embodiment, the body 305 is made of copper or a dielectric polymer material (eg, PEEK; Torlon; LCP; acrylic; polycarbonate; potentially filled with a filler (such as graphite, ceramic, metal, carbon, PPS) construction of carbon nanotubes, graphene, nanometer or micron-sized flakes, tubes, fibers, etc.). Some of these filled resins are available from Cool Polymers (North Kingstown, RI). The lamp body 305 can be machined or injection molded by 5-axis milling. Alternatively, body 305 can be injection molded and optionally milled or drilled as appropriate. As further described below, various components can be mounted directly or indirectly to body 305, including but not limited to housing 202, reflector 201, LED array 330, microchannel cooler (preferably forming LED array 330) a portion of the common anode substrate), the cathode jaws 321 and the anode busbars 315a-b, and one or more LED driver printed circuit boards (PCBs) 310, preferably the one or more LED driver printed circuit boards (PCBs) 310 It is a metal core PCB (MCPCB) and the anode busbars 315a-b can serve as a metal core of the MCPCB (also referred to as a common anode backplane). A molded or glued thermal pad can be inserted between the MCPCB and the coolant flowing in the outer sidewall of the lamp body.

在本非限制性實例中,本體305中已形成一主要入口燈體冷卻流體通道360及一主要出口燈體冷卻流體通道361,兩者皆沿本體305之長度延伸。該主要入口燈體冷卻流體 通道360經由形成於本體305之基底中的第一冷卻劑入口(圖中未展示)而與入口冷卻管203流體連通。該主要出口燈體冷卻流體通道361經由形成於本體305之基底中的第二冷卻劑入口(圖中未展示)而與出口冷卻管204流體連通。通道360及361經定尺寸,以使得冷卻劑實質上均一地流經安置於通道360與361之間的微通道冷卻器(圖中未展示)。在一實施例中,第一冷卻劑入口與第二冷卻劑入口可在本體305之基底的對置端上、在彼此對面、交錯或其某組合以促進冷卻劑自主要入口燈體冷卻流體通道360經由微通道冷卻器相等且均一地流動至主要出口燈體冷卻流體通道361。在替代實施例中,可使用多個入口燈體冷卻流體通道及多個出口燈體冷卻流體通道。 In this non-limiting example, a main inlet lamp body cooling fluid passage 360 and a main outlet lamp body cooling fluid passage 361 have been formed in the body 305, both extending along the length of the body 305. The main inlet lamp body cooling fluid Channel 360 is in fluid communication with inlet cooling tube 203 via a first coolant inlet (not shown) formed in the base of body 305. The primary exit lamp body cooling fluid passage 361 is in fluid communication with the outlet cooling tube 204 via a second coolant inlet (not shown) formed in the base of the body 305. Channels 360 and 361 are sized such that the coolant flows substantially uniformly through a microchannel cooler (not shown) disposed between channels 360 and 361. In an embodiment, the first coolant inlet and the second coolant inlet may be on opposite ends of the base of the body 305, opposite each other, staggered, or some combination thereof to promote coolant cooling fluid passage from the main inlet lamp body. 360 flows equally and uniformly to the main exit lamp body cooling fluid passage 361 via the microchannel cooler. In an alternate embodiment, a plurality of inlet lamp body cooling fluid channels and a plurality of outlet lamp body cooling fluid channels may be used.

在一實施例中,藉由設計平行於LED陣列330之縱軸延伸的主冷卻劑入口及出口歧管通道以藉由使通道深度延伸至一點來達到沿通道長度幾乎均勻的壓力降之位準來達成經由微通道冷卻器的流平衡,在該點處,通道之頂部附近(最接近於微通道冷卻器(圖中未展示))的冷卻劑壓力差已藉由透過極深之通道自入口端散佈開或收斂至出口端而達到沿通道之整個長度幾乎恆定的點。換言之,極深之通道360及361給予冷卻劑足夠之時間、流體阻力及表面曳力以沿微通道冷卻器之長度散佈開且在其中每一通道的頂部附近達成小的壓力差,從而導致經過LED陣列330下的每一微通道之平衡流。 In one embodiment, a substantially uniform pressure drop along the length of the channel is achieved by designing a primary coolant inlet and outlet manifold passage extending parallel to the longitudinal axis of the LED array 330 by extending the channel depth to a point. To achieve flow balance through the microchannel cooler, at which point the coolant pressure difference near the top of the channel (closest to the microchannel cooler (not shown) has been passed through the inlet through the deep channel The ends spread or converge to the exit end to a point that is nearly constant along the entire length of the channel. In other words, the extremely deep channels 360 and 361 give the coolant sufficient time, fluid resistance and surface drag to spread along the length of the microchannel cooler and achieve a small pressure differential near the top of each channel, resulting in a The balanced flow of each microchannel under the LED array 330.

根據一實施例,LED驅動器PCB 310之子總成組件包括 (但不限於)LED驅動器控制器IC(圖中未展示,其亦可為DC/DC轉換器系統之部分)、FET 312、閘(圖中未展示)、電感器311、電容器(圖中未展示)、電阻器(圖中未展示)及陰極匯流排條304a-b。如上文所指示,在一實施例中,LED驅動器PCB 310為在一金屬(芯)基板上的多層金屬箔(例如,銅)/介電層(例如,MCPCB)(可購自Cofan,Canada),且在有介入導熱化合物之情況下耦接(例如,經由螺絲固定)至本體305,以便將來自驅動器總成之廢熱耗散至本體305中,在本體305中廢熱由穿過主要入口燈體冷卻流體通道360及主要出口燈體冷卻流體通道361之冷卻劑流帶走。在本實例中,通道360及361在本體305中延伸得足夠深以對實質上在FET 312及電感器311下之區域提供冷卻,在該區域中會產生大量之廢熱。可使用介層孔來電連接多層金屬箔層。 According to an embodiment, the subassembly assembly of the LED driver PCB 310 includes (but not limited to) LED driver controller IC (not shown in the figure, which can also be part of a DC/DC converter system), FET 312, gate (not shown), inductor 311, capacitor (not shown) Shown), resistors (not shown) and cathode bus bars 304a-b. As indicated above, in one embodiment, the LED driver PCB 310 is a multilayer metal foil (eg, copper)/dielectric layer (eg, MCPCB) on a metal (core) substrate (available from Cofan, Canada). And coupled (eg, via a screw) to the body 305 in the presence of an intervening thermally conductive compound to dissipate waste heat from the driver assembly into the body 305 where waste heat is passed through the main inlet lamp body The coolant flow of the cooling fluid passage 360 and the main outlet lamp body cooling fluid passage 361 is carried away. In the present example, channels 360 and 361 extend deep enough in body 305 to provide cooling to areas substantially under FET 312 and inductor 311 where a significant amount of waste heat is generated. The multilayer metal foil layer can be electrically connected using a via hole.

在一實施例中,LED驅動器總成PCB 310a-b(含有表面黏著電組件及其他半導體組件)具有至少90%之效率。例示性之允許高電流且高效率之LED驅動器IC(圖中未展示)可購自National Semiconductor USA(例如,零件LM 3434或LM 3433或實質上等效物)。Linear and Maxim(USA)亦製造類似零件。LED驅動器IC(圖中未展示)為允許降壓轉換較高電壓/較低電流輸入以便轉換至服從在本發明之各種實施例中需要的高電流LED驅動條件的較低電壓及較高電流之半導體含接面p-n的裝置(較佳基於矽)。可使用PWM。 In one embodiment, the LED driver assembly PCBs 310a-b (containing surface mount components and other semiconductor components) have an efficiency of at least 90%. An exemplary high current and high efficiency LED driver IC (not shown) is commercially available from National Semiconductor USA (eg, part LM 3434 or LM 3433 or substantially equivalent). Linear and Maxim (USA) also manufacture similar parts. The LED driver IC (not shown) is a lower voltage and higher current that allows a buck to convert a higher voltage/lower current input for conversion to high current LED driving conditions that are required in various embodiments of the present invention. The device of the semiconductor containing the junction pn (preferably based on 矽). PWM can be used.

LED陣列330之個別LED或LED群組由LED驅動器PCB 310a-b之相應段來驅動。舉例而言,UV LED燈頭模組200每側之4群17個LED係以每LED約3 A(範圍係0.5 A至30 A)及約4.5 V至5 V(範圍係2 V至10 V)驅動。在此實施例中,LED陣列330包含2列68個LED的LED列(總共136個),其中對置之LED群組由相應LED驅動器IC以每LED約3A電驅動及/或控制,導致每UV LED燈頭模組200約2 kW之輸入。另一非限制性實例將為16個LED的15個群組×2,其可以每群約4 V及40 A(範圍係1 V至10 V及1 A至500 A)驅動且具有至LED驅動器PCB 310a-b的僅約12 V的輸入。 Individual LEDs or groups of LEDs of LED array 330 are LED driver PCBs The corresponding segment of 310a-b is driven. For example, the UV LED lamp head module 200 has 4 groups of 17 LEDs on each side of about 3 A (ranging from 0.5 A to 30 A) and about 4.5 V to 5 V (range 2 V to 10 V) per LED. drive. In this embodiment, LED array 330 includes two columns of LED columns of 68 LEDs (136 in total), wherein the opposing LED groups are electrically driven and/or controlled by respective LED driver ICs at approximately 3 A per LED, resulting in each The UV LED lamp head module 200 has an input of about 2 kW. Another non-limiting example would be 15 groups of 16 LEDs x 2, which can be driven by approximately 4 V and 40 A per group (range 1 V to 10 V and 1 A to 500 A) and have LED drivers Only about 12 V of input to the PCB 310a-b.

在一些實施例中,歸因於表面黏著電組件及其他半導體組件的高效率,可建構自訂的金屬芯PCB(MCPCB),以使得其可固定(較佳藉由螺絲或其他構件)至本體305之側,且可經由界面材料且進入導熱本體305中來進行傳導冷卻。廢熱最終藉由通過本體305之冷卻劑流的對流傳輸而被移除。舉例而言,兩個LED驅動器PCB 310a-b(本體305之每一側一個)可建構於2.5 mm(範圍係0.1 mm至10 mm)厚之銅芯板上,該銅芯板具有約4密耳至12密耳之導熱介電材料層(可購自Thermagon USA及/或Cofan,Canada)。在一實施例中,將高導熱性之介電層插入於LED驅動器PCB 310a-b之銅金屬層(例如,1盎司至4盎司銅箔層)之間,LED驅動器PCB 310a-b固定至本體305。每一LED驅動器PCB 310a-b(例如,×2)可具有對應於由撓曲電路區段隔離之4群LED的位置的4個電隔離之陰極段(其中四者展示於圖6之剖視分解圖中-其中兩者由相對之LED驅動器PCB 310a-b驅 動)。在一實施例中,LED驅動器PCB 310a-b與撓曲電路區段彼此正交地配置。另一非限制性實例為本體305之每一側具有固定至每一側的一個LED驅動器PCB 310a-b,其中4個單獨之LED驅動器控制器IC位於每一PCB上(總共8個LED驅動器控制器IC,加起來可被驅動至高達每(例如,80 mm長)UV LED燈頭模組200約2 kW或以上)。此外,藉由將LED驅動器PCB 310固定至本體305之側,來自LED驅動器PCB 310a-b之廢熱可耗散至本體305中且由冷卻劑流帶走至熱交換器或冷凍器。在一實施例中,可將導熱油脂或其他化合物置放於LED驅動器PCB 310a-b與本體305之間。在替代實施例中,LED驅動器PCB 310a-b可以不具熱效率之方式附接至本體305且可經由風扇來進行對流冷卻。 In some embodiments, a custom metal core PCB (MCPCB) can be constructed such that it can be fixed (preferably by screws or other components) to the body due to the high efficiency of surface mount components and other semiconductor components. Conductive cooling is performed on the side of 305 and through the interface material and into the thermally conductive body 305. Waste heat is ultimately removed by convective transport of the coolant stream through body 305. For example, two LED driver PCBs 310a-b (one on each side of body 305) can be constructed on a 2.5 mm (range 0.1 mm to 10 mm) thick copper core board having about 4 mils Ear to 12 mil layer of thermally conductive dielectric material (available from Thermagon USA and/or Cofan, Canada). In one embodiment, a high thermal conductivity dielectric layer is interposed between the copper metal layers of the LED driver PCBs 310a-b (eg, 1 ounce to 4 ounce copper foil layers), and the LED driver PCBs 310a-b are secured to the body. 305. Each of the LED driver PCBs 310a-b (eg, x2) may have four electrically isolated cathode segments corresponding to the locations of the four groups of LEDs isolated by the flex circuit segments (four of which are shown in cross-section of FIG. In the exploded view - two of which are driven by the opposite LED driver PCB 310a-b move). In an embodiment, the LED driver PCBs 310a-b and the flex circuit segments are arranged orthogonal to one another. Another non-limiting example is that each side of the body 305 has one LED driver PCB 310a-b fixed to each side, with four separate LED driver controller ICs located on each PCB (a total of eight LED driver controls) The ICs, in combination, can be driven up to about 2 kW or more per (eg, 80 mm long) UV LED lamp head module 200. Moreover, by securing the LED driver PCB 310 to the side of the body 305, waste heat from the LED driver PCBs 310a-b can be dissipated into the body 305 and carried away by the coolant flow to the heat exchanger or chiller. In one embodiment, a thermally conductive grease or other compound can be placed between the LED driver PCBs 310a-b and the body 305. In an alternate embodiment, LED driver PCBs 310a-b may be attached to body 305 in a manner that is not thermally efficient and may be convectively cooled via a fan.

根據一實施例,一共同陽極基板層317被夾緊於陰極爪320a-d及321a-d與陽極匯流排體315a-b之間。一單片U型共同陽極由陽極匯流排體315a-b(其實質上彼此平行)及共同陽極基板層317(其與陽極匯流排體315a-b實質上正交)形成。在另一實施例中,共同陽極基板317及陽極匯流排體315a-b可形成單片矩形或正方形形狀之共同陽極。 According to an embodiment, a common anode substrate layer 317 is clamped between the cathode jaws 320a-d and 321a-d and the anode busbar bodies 315a-b. A single U-shaped common anode is formed by anode busbar bodies 315a-b (which are substantially parallel to each other) and a common anode substrate layer 317 (which is substantially orthogonal to anode busbar bodies 315a-b). In another embodiment, the common anode substrate 317 and the anode busbar bodies 315a-b can form a common anode of a single rectangular or square shape.

在一實施例中,陰極爪320a-d及321a-d之一表面實質上平行於共同陽極基板317之陰極部分,且另一表面實質上平行於LED驅動器PCB 310a-b之頂面,藉此允許在此兩個層之間進行電接觸。在下文提供關於形成共同陽極基板層317之裝配的其他細節,包括用於固定陰極爪320a-d 321a-d、陽極匯流排體315a-b的安裝機制。 In one embodiment, one of the surfaces of the cathode claws 320a-d and 321a-d is substantially parallel to the cathode portion of the common anode substrate 317, and the other surface is substantially parallel to the top surface of the LED driver PCBs 310a-b, thereby Electrical contact between the two layers is allowed. Additional details regarding the assembly of the common anode substrate layer 317 are provided below, including mounting mechanisms for securing the cathode jaws 320a-d 321a-d, anode busbar bodies 315a-b.

在本實例中,反射器201為具有比進口351或出口孔隙353顯著寬之中間部分352的大型(巨型:例如,高度為幾十毫米)、模組化、非成像之反射器結構。此結構非常適合於印刷應用,在該等印刷應用中,工件距反射器201的短之間隙距離(例如,2 mm)及高照射度(例如,大於~50 W/cm2)有益於高處理速度、固化硬度及固化完全性(不黏著)。根據一實施例,該反射器對之進口孔隙(例如,進口孔隙351)所具有之一區域與該LED陣列之發光表面之一區域的110%(範圍係100%至150%)一樣大。 In the present example, reflector 201 is a large (mega: for example, tens of millimeters in height), modular, non-imaged reflector structure having an intermediate portion 352 that is significantly wider than inlet 351 or outlet aperture 353. This structure is well suited for printing applications where a short gap distance (eg, 2 mm) from the reflector 201 and high illumination (eg, greater than ~50 W/cm 2 ) are beneficial for high processing. Speed, cure hardness and cure completeness (no adhesion). According to an embodiment, the reflector has a region of the inlet aperture (e.g., inlet aperture 351) that is as large as 110% of the area of the illumination surface of the LED array (range 100% to 150%).

在一實施例中,反射器201捕獲並控制由LED陣列330發射之光的約90%或以上(範圍係50%至99%),且細長反射器201之每一半為在投射於工件上之光學圖案的中心線之對置側上具有焦點的橢圓形,結果為與傳統之共用焦點(沿所投射射束中心線)設計方法相比增加峰值照射度。亦可考慮複合橢圓形或其他複合拋物線形狀。在一實施例中,反射器201經設計以具有約80度(範圍係45度至90度)之高角度範圍。 In one embodiment, the reflector 201 captures and controls about 90% or more of the light emitted by the LED array 330 (range 50% to 99%), and each half of the elongated reflector 201 is projected onto the workpiece. The elliptical shape with the focus on the opposite side of the centerline of the optical pattern results in an increase in peak illumination compared to the conventional shared focus (along the projected beam centerline) design approach. Composite elliptical or other compound parabolic shapes are also contemplated. In an embodiment, the reflector 201 is designed to have a high angular range of about 80 degrees (range 45 degrees to 90 degrees).

因為光引發劑可為有毒的(且昂貴的)且未固化之墨水、塗層或黏著劑為非所要的,因此本發明之各種實施例設法藉由產生高峰值照射度及高總輸出功率(例如,每UV LED燈頭模組200約184 W)來產生高品質固化(例如,100%或接近100%)。如上文所述,高照射度導致更快速、更深及更硬之固化材料。因此,本發明之實施例設法達成為當前最新技術水準之UV LED(及汞燈)固化系統中所揭示之位準的 約十倍(或十倍以上)的峰值照射度位準,同時亦維持LED之高效率及長壽命。 Because photoinitiators can be toxic (and expensive) and uncured inks, coatings or adhesives are undesirable, various embodiments of the present invention seek to produce high peak illumination and high total output power ( For example, approximately 184 W per UV LED lamp head module 200 produces high quality cure (eg, 100% or close to 100%). As noted above, high illumination results in a faster, deeper, and harder cured material. Thus, embodiments of the present invention seek to achieve the levels disclosed in current state of the art UV LED (and mercury lamp) curing systems. The peak illumination level is about ten times (or ten times higher) while maintaining the high efficiency and long life of the LED.

根據一實施例,反射器201為易工廠調換且較佳現場可替換的,藉此允許將其他反射器附接至UV LED燈頭模組200之本體305以達成不同應用,此可能會實現不同製程目標/參數。在本實例中,反射器201經展示為具有兩件式建構的橢圓反射器,其中兩個主要組件為一或多個橢圓形之對置側。反射器201可在五軸銑床上加工且接著用鑽砂拋光來加以拋光,或其可為擠製金屬且後拋光,或其可為擠製聚合物且歸因於模穴/擠壓模的前拋光而無需後拋光。如上文所描述,反射器201可為模組化設計,使得需要高照射度(輸出功率密度)的窄之投射焦點射束「線」的在扁平基板上的一應用(諸如,墨水固化)可在產生超高強度線之反射器(圖中未展示)上使用一螺栓,而需要較長景深之在粗糙拓撲基板上的一應用可能需要針對此較長景深(或較長焦點深度)特定設計的反射器對(圖中未展示),藉由簡單地旋開先前反射器對且將新反射器擰緊在適當位置,該反射器對易於與高強度反射器互換,如下文更詳細地描述。類似地,可針對長工作距離及高強度或長工作距離及工件上之寬區域平滑強度射束圖案(例如,頂帽射束圖案)來特定地組態一反射器對。可使用反射器201與共同陽極基板層317之間的定位銷。 According to an embodiment, the reflector 201 is factory-replaceable and preferably field replaceable, thereby allowing other reflectors to be attached to the body 305 of the UV LED lamp head module 200 for different applications, which may result in different processes. Target/parameter. In the present example, reflector 201 is shown as having a two-piece construction of an elliptical reflector in which the two main components are opposite sides of one or more elliptical shapes. The reflector 201 can be machined on a five-axis milling machine and then polished with sandblasting, or it can be extruded metal and post-polished, or it can be an extruded polymer and attributed to the cavity/extrusion die. Pre-polished without post-polishing. As described above, the reflector 201 can be modularly designed such that an application (such as ink curing) on a flat substrate that requires a narrow projection focus beam "line" of high illumination (output power density) can be used. A bolt is used on a reflector that produces ultra-high-strength lines (not shown), and an application that requires a longer depth of field on a rough topology substrate may require a specific design for this longer depth of field (or longer depth of focus) The pair of reflectors (not shown) can be easily interchanged with high intensity reflectors by simply unscrewing the previous reflector pair and tightening the new reflector in place, as described in more detail below. Similarly, a reflector pair can be specifically configured for long working distances and high or long working distances and wide area smooth intensity beam patterns (eg, top hat beam patterns) on the workpiece. A locating pin between the reflector 201 and the common anode substrate layer 317 can be used.

在一實施例中,較佳射出模製之聚合反射器201之內表面為具有ALD(原子層沈積)保護性外塗層之銀真空沈積塗 層,該ALD保護外塗層歸因於ALD製程之無針孔性質而為耐腐蝕的。可使用各種沈積製程(例如,ALD、CVD、濺鍍、蒸鍍、溶膠凝膠)來沈積該銀塗層。由於聚碳酸酯為廉價之聚合反射器樹脂,因此在沈積銀之前應將一蒸氣障壁置放於聚碳酸酯上,使得銀塗層面向聚合反射器基板之側不允許腐蝕性蒸氣(分子)自內向外腐蝕銀。可考慮低蒸氣滲透性樹脂(例如,E48R(美國Zeon Chemicals))。高溫樹脂(如Ultem及Extem)可購自美國Sabic。此外,可另外考慮蒸氣障壁(例如,銅、ALD氧化物塗層)且在銀或鋁塗佈之前將其沈積於反射器上。ALD介電外塗層係選自氧化物(例如,Al2O3)或氟化物(例如,MgF2)或其某組合之群組。或者,反射器201上之HR塗層亦可為在射出模製之聚合反射器上的介電外塗鋁塗層。該介電塗層較佳為針對最適合於應用之波長周圍的峰值反射率而調整的單層氟化鎂或二氧化矽。可將基於光干涉之介電堆疊用於上述組態中之任一者以增加在選定波長範圍中之峰值照射度。 In one embodiment, the inner surface of the preferred injection molded polymeric reflector 201 is a silver vacuum deposited coating having an ALD (atomic layer deposition) protective overcoat due to the ALD process. It is corrosion-resistant without pinhole properties. The silver coating can be deposited using a variety of deposition processes (eg, ALD, CVD, sputtering, evaporation, sol gel). Since polycarbonate is an inexpensive polymeric reflector resin, a vapor barrier should be placed on the polycarbonate prior to depositing the silver so that the side of the silver coating facing the polymeric reflector substrate does not allow corrosive vapors (molecules) Corrosion of silver inside and outside. Low vapor permeability resins are contemplated (e.g., E48R (Zeon Chemicals, USA). High temperature resins such as Ultem and Extem are available from Sabic, USA. In addition, vapor barriers (eg, copper, ALD oxide coatings) may be additionally considered and deposited onto the reflector prior to silver or aluminum coating. The ALD dielectric overcoat is selected from the group of oxides (eg, Al 2 O 3 ) or fluorides (eg, MgF 2 ) or some combination thereof. Alternatively, the HR coating on the reflector 201 can also be a dielectric overcoated aluminum coating on the injection molded polymeric reflector. The dielectric coating is preferably a single layer of magnesium fluoride or cerium oxide adjusted for peak reflectance around the wavelength most suitable for the application. A dielectric interference based dielectric stack can be used for any of the above configurations to increase peak illumination in a selected wavelength range.

本發明之實施例可使用用於射束控制之輔助光學器件(圖中未展示)及/或具有抗反射(AR)塗層之窗(例如,透鏡)340。由於自出口孔隙353射出之角度可超過45度,因此AR塗層較佳為BAAR(寬角度抗反射)塗層,此係因為在不使用此BAAR塗層時,此等高角度將經受來自窗表面之顯著有害之反射。可考慮用於日曬床(tanning bed)之高抗UV性丙烯酸系樹脂,但對於窗340及輔助光學器件而言,硼矽玻璃較佳。在一實施例中,窗座架341將窗340固持在 適當位置,如下文進一步描述。根據一實施例,一O形環(圖中未展示)位於窗340與反射器201之間。在一實施例中,反射器201之外殼可為射出模製的。在各種實施例中,可使用惰性氣體或微孔球體(可購自美國Zeolite)來控制水蒸汽。在LED上不使用囊封劑的情況下,此蒸汽對於LED壽命而言可為問題。由於由短UV波長之高光子能量所致之黃化為一問題,因此當前最新技術水準不允許使用LED囊封劑(諸如,高純度之聚矽氧)。已知來自Schott(德國)之具有低碳含量的聚矽氧囊封劑為現存之具有最少黃化的囊封劑。 Embodiments of the invention may use auxiliary optics (not shown) for beam steering and/or windows (e.g., lenses) 340 having an anti-reflective (AR) coating. Since the angle of exit from the exit aperture 353 can exceed 45 degrees, the AR coating is preferably a BARAR (wide angle anti-reflective) coating because this high angle will be subject to the window when the BAAR coating is not used. Significantly harmful reflections on the surface. A high UV resistant acrylic resin for use in a tanning bed is contemplated, but for window 340 and auxiliary optics, borosilicate glass is preferred. In an embodiment, the window mount 341 holds the window 340 The appropriate location is further described below. According to an embodiment, an O-ring (not shown) is located between the window 340 and the reflector 201. In an embodiment, the outer casing of the reflector 201 can be injection molded. In various embodiments, inert gas or microporous spheres (commercially available from Zeolite, USA) can be used to control water vapor. In the absence of an encapsulant on the LED, this vapor can be a problem for LED life. Since yellowing due to high photon energy of short UV wavelengths is a problem, current state of the art standards do not allow the use of LED encapsulants (such as high purity polyfluorene). It is known that a low carbon content polyxanthene encapsulating agent from Schott (Germany) is the existing encapsulating agent with minimal yellowing.

為達成量測自窗340至工件表面之距離的目的,應理解,窗340具有一內表面(最接近於LED陣列330之表面)及一外表面(最接近於工件之表面)。此處,距工件之距離通常係相對於窗340之外表面來量測的。 To achieve the purpose of measuring the distance from window 340 to the surface of the workpiece, it will be understood that window 340 has an inner surface (the surface closest to LED array 330) and an outer surface (the surface closest to the workpiece). Here, the distance from the workpiece is typically measured relative to the outer surface of the window 340.

圖4A至圖4B提供圖2A之UV LED燈頭模組200之反射器201的底部部分及本體305之頂部部分的放大剖示圖。在此等視圖中,LED陣列330及共同陽極基板層317之各個態樣變得顯而易見。另外,在此等視圖中,將分離器墊圈314描繪為由複數個O形環420形成,且LED驅動器PCB 310a-b之較佳多層建構變得可見。 4A-4B provide an enlarged cross-sectional view of the bottom portion of the reflector 201 of the UV LED lamp head module 200 of FIG. 2A and the top portion of the body 305. In these views, various aspects of LED array 330 and common anode substrate layer 317 become apparent. Additionally, in these views, the separator gasket 314 is depicted as being formed from a plurality of O-rings 420, and the preferred multilayer construction of the LED driver PCBs 310a-b becomes visible.

如下文更詳細描述,在一實施例中,一微通道冷卻器410提供共同陽極基板層317。根據一實施例,微通道冷卻器410為一擴散接合之經蝕刻箔微通道冷卻器,其包括擴散接合至箔層(圖中未展示)的熱散播器層(圖中未展示), 已在該等箔層中蝕刻各種主入口/出口微通道411及內部微通道(圖中未展示)。雖然微通道冷卻確實具有邊界層被壓縮的層狀組件,但在本發明之實施例中,可由經蝕刻之冷卻劑流動路徑形狀及/或方向改變導致衝擊冷卻(例如,擾動)。一例示性微通道冷卻器由美國專利第7,836,940號說明,該專利為達成所有目的特此以引用之方式全文併入。滿足本文中所描述之冷卻要求的微通道冷卻器可購自Micro-Cooling Concepts,USA。熟習此項技術者將認識到,可使用各種其他冷卻方案。舉例而言,可考慮巨型通道冷卻及其他擾流冷卻路徑(例如,衝擊、射流衝擊)或二相/泡核沸騰(或某組合)及冷卻方案。 As described in more detail below, in one embodiment, a microchannel cooler 410 provides a common anode substrate layer 317. According to an embodiment, the microchannel cooler 410 is a diffusion bonded etched foil microchannel cooler comprising a heat spreader layer (not shown) that is diffusion bonded to a foil layer (not shown), Various main inlet/outlet microchannels 411 and internal microchannels (not shown) have been etched in the foil layers. While microchannel cooling does have a layered component in which the boundary layer is compressed, in embodiments of the invention, impact cooling (e.g., perturbation) may result from changes in the shape and/or direction of the etched coolant flow path. An exemplary microchannel cooler is described in U.S. Patent No. 7,836,940, the entire disclosure of which is incorporated herein in its entirety by reference. Microchannel coolers that meet the cooling requirements described herein are available from Micro-Cooling Concepts, USA. Those skilled in the art will recognize that a variety of other cooling schemes can be used. For example, megachannel cooling and other turbulent cooling paths (eg, shock, jet shock) or two-phase/nuclear boiling (or some combination) and cooling schemes may be considered.

根據本發明之各種實施例,一個目標為產生並維持LED陣列330之端至端的相對等溫狀態(例如,偏差約攝氏±1度之接面溫度且亦通常~攝氏40度之最大平均接面溫度(範圍係攝氏30度至攝氏200度))。為達成此目標,本發明之實施例嘗試自前至後、頂至底、端至端及/或側至側地平衡穿過微通道冷卻器410之冷卻劑流。在替代實施例中,流可為平衡或不平衡的以適應設計需要。冷卻劑可在實際上任一方向上流經微通道冷卻器410的內部之主及輔通道(圖中未展示),該任一方向選自相對於LED陣列330之LED(以及在LED陣列330之LED下)的底面垂直、水平、正交、平行等或其任一組合。描述通道之定向的另一方式為相對於p-n接面平面,其(在多數LED中)實質上平行於LED之底面。 In accordance with various embodiments of the present invention, one objective is to create and maintain a relatively isothermal state of the end-to-end of the LED array 330 (eg, a junction temperature that is biased by about ±1 degree Celsius and also typically a maximum average junction of 40 degrees Celsius). Temperature (range 30 degrees Celsius to 200 degrees Celsius)). To achieve this goal, embodiments of the present invention attempt to balance the coolant flow through the microchannel cooler 410 from front to back, top to bottom, end to end, and/or side to side. In alternative embodiments, the flow may be balanced or unbalanced to accommodate design needs. The coolant may flow through the primary and secondary channels (not shown) of the interior of the microchannel cooler 410 in either direction, either direction selected from the LEDs relative to the LED array 330 (and the LEDs in the LED array 330) The bottom surface of the lower) is vertical, horizontal, orthogonal, parallel, etc., or any combination thereof. Another way to describe the orientation of the channels is relative to the p-n junction plane, which (in most LEDs) is substantially parallel to the bottom surface of the LED.

類似地,內部主及/或輔通道就可與實際上任一定向之 歧管互連,該等定向選自再次相對於LED之底部(或LED之p-n接面)的定向垂直、水平、正交、平行、對角線、有角的、繞過、部分繞過等,或其任一組合。較佳地,所有或幾乎所有(接近100%)之冷卻劑最終在與LED陣列330及/或微通道冷卻器410之長軸正交或垂直的方向上自主要入口燈體冷卻流體通道360之頂部部分(例如,主要入口微通道冷卻器冷卻流體通道430b)經由微通道冷卻器410流動至主要出口燈體冷卻流體通道361之頂部部分(例如,主要出口微通道冷卻器冷卻流體通道430a)。在一實施例中,微通道冷卻器410利用藉由CFD最佳化之流動路徑來將流速減少至極大地減少侵蝕之位準。在一實施例中,約2公尺/秒之冷卻劑速度對於減少對通道之侵蝕而言為較佳的。可將陶瓷材料用於通道基板以更進一步地消除侵蝕可能性。 Similarly, the internal primary and / or secondary channels can be compared to virtually any orientation Manifold interconnects, the orientations being selected from vertical, horizontal, orthogonal, parallel, diagonal, angular, bypassed, partially bypassed, etc., again relative to the bottom of the LED (or the pn junction of the LED) , or any combination thereof. Preferably, all or nearly all (nearly 100%) of the coolant ultimately cools the fluid channel 360 from the primary inlet lamp body in a direction orthogonal or perpendicular to the long axis of the LED array 330 and/or the microchannel cooler 410. The top portion (eg, primary inlet microchannel cooler cooling fluid channel 430b) flows via microchannel cooler 410 to a top portion of primary outlet lamp body cooling fluid channel 361 (eg, primary outlet microchannel cooler cooling fluid channel 430a). In one embodiment, the microchannel cooler 410 utilizes a flow path optimized by CFD to reduce the flow rate to a level that greatly reduces erosion. In one embodiment, a coolant velocity of about 2 meters per second is preferred to reduce erosion of the passage. Ceramic materials can be used for the channel substrate to further eliminate the likelihood of erosion.

如早先所述,主要入口燈體冷卻流體通道360及主要出口燈體冷卻流體通道316經定尺寸,使得冷卻劑均一地流經經蝕刻箔內部微通道,且使得較佳幾乎所有之冷卻劑最終在與LED陣列330之長軸實質上垂直的方向上流動,此係因為在主要入口燈體冷卻流體通道360中開始的冷卻劑之任何給定分子最終到達主要出口燈體冷卻流體通道361中,且因此,在冷卻劑穿越微通道冷卻器410且在LED下流動時,基本上冷卻劑之每一分子最終與LED陣列330之長軸實質上垂直地流動(實質上平行於LED陣列330之短軸)。藉由使主要入口燈體冷卻流體通道360極窄(例如,約1 mm至4 mm且較佳約2.3 mm)且極深(例如,約1 mm至 10,000 mm且較佳約100 mm),所得流體阻力在平衡流方面有助於穿過微通道冷卻器410之實質上所有或大多數內部通道(不管其是主通道、十字通道、輔通道、歧管通道等)的均一微通道流。應理解,此等通道可具有用於擾動之曲線、S彎曲、突起且可能為窄的,且在其在實質上橫向於或平行於LED陣列330之短軸的方向上穿越LED陣列330下的空間時加寬及/或加深。再一次,任一給定微通道之定向可處於相對於LED之p-n接面的定向的任一定向(以及流動方向)。 As described earlier, the primary inlet lamp body cooling fluid passage 360 and the main outlet lamp body cooling fluid passage 316 are sized such that the coolant flows uniformly through the etched foil internal microchannel and preferably results in almost all of the coolant ultimately Flowing in a direction substantially perpendicular to the long axis of the LED array 330, because any given molecule of coolant starting in the primary inlet lamp body cooling fluid channel 360 eventually reaches the primary exit lamp body cooling fluid channel 361, And, therefore, as the coolant passes through the microchannel cooler 410 and flows under the LED, substantially each molecule of the coolant ultimately flows substantially perpendicular to the long axis of the LED array 330 (substantially parallel to the LED array 330) axis). By making the primary inlet lamp body cooling fluid passage 360 extremely narrow (eg, about 1 mm to 4 mm and preferably about 2.3 mm) and extremely deep (eg, about 1 mm to 10,000 mm and preferably about 100 mm), the resulting fluid resistance contributes to substantially all or most of the internal passages of the microchannel cooler 410 in terms of equilibrium flow (regardless of whether it is the primary channel, the cross channel, the secondary channel, the manifold) Uniform microchannel flow of tube channels, etc.). It should be understood that such channels may have curves for the perturbations, S-bends, protrusions, and may be narrow, and traverse the LED array 330 in a direction substantially transverse to or parallel to the minor axis of the LED array 330. Space is widened and/or deepened. Again, the orientation of any given microchannel can be in any orientation (and flow direction) relative to the orientation of the p-n junction of the LED.

如下文更詳細地描述,LED陣列330(包含發光裝置,諸如LED或雷射二極體)安裝至微通道冷卻器410。在一實施例中,沿微通道冷卻器之長度的LED之數目的範圍係2至10,000,且每一LED之大小為約1.07、1.2、2、4平方毫米(2×4 mm)(範圍係0.1 mm至100 mm)。寬度對長度之縱橫比較佳為約1:68至1:200,但該範圍可為1:10至1:1,000。請注意,LED陣列可能不具有高縱橫比,且可為實質上正方形、實質上矩形、實質上圓形或其他幾何形狀。例示性LED可購自美國SemiLEDs。SemiLED之LED具有一獨特(通常為電鍍的)銅基板,其有利地接合至銅(或陶瓷)微通道冷卻器410,藉此維持此高導熱性材料之熱及成本優勢。根據一實施例,所使用之LED的大小為1.07×1.07平方毫米,且LED陣列330包含68個LED長乘2個LED寬的陣列。 As described in more detail below, LED array 330 (comprising a light emitting device, such as an LED or a laser diode) is mounted to microchannel cooler 410. In one embodiment, the number of LEDs along the length of the microchannel cooler ranges from 2 to 10,000, and the size of each LED is about 1.07, 1.2, 2, 4 square millimeters (2 x 4 mm) (range 0.1 mm to 100 mm). The width to length aspect ratio is preferably from about 1:68 to 1:200, but the range may be from 1:10 to 1:1,000. Note that the LED array may not have a high aspect ratio and may be substantially square, substantially rectangular, substantially circular, or other geometric shape. Exemplary LEDs are available from US SemiLEDs. The LED of SemiLED has a unique (usually electroplated) copper substrate that is advantageously bonded to a copper (or ceramic) microchannel cooler 410, thereby maintaining the thermal and cost advantages of this highly thermally conductive material. According to an embodiment, the size of the LED used is 1.07 x 1.07 square millimeters, and the LED array 330 comprises an array of 68 LEDs long by 2 LEDs wide.

日本Nichia亦為例示性LED提供商,其一般製造水平結 構之LED,以與SemiLED之常見垂直結構LED對抗。在一實施例中,LED串聯群組中之一或多者或整個LED陣列可用水平結構之LED來實施,該等LED在表面頂部上具有陽極墊及陰極墊,例如在非導電基板(諸如,藍寶石)之頂部上。舉例而言,一陰極線可在該系列之一端處耦接至多層撓曲電路1403,且一陽極線可在該系列之另一端處耦接至多層撓曲電路1403,而無需為LED之特定串聯群組使用一基台。 Japan Nichia is also an exemplary LED provider, its general manufacturing level The LEDs are designed to compete with the common vertical structure LEDs of SemiLED. In one embodiment, one or more of the LED series groups or the entire LED array can be implemented with horizontally structured LEDs having an anode pad and a cathode pad on top of the surface, such as on a non-conductive substrate (eg, Sapphire on top of it. For example, a cathode line can be coupled to the multilayer flex circuit 1403 at one end of the series, and an anode line can be coupled to the multilayer flex circuit 1403 at the other end of the series without the need for a particular series connection of the LEDs. The group uses a base station.

在本發明之一實施例中,LED陣列330之LED被實質上電並聯地置放,或在較佳共同陽極基板上具有至少兩個並聯之LED。因為在LED之基底與基板之間無需如在習知串聯組態或習知串聯/並聯組態中所需要一樣添加阻熱介電層以達成電隔離之目的,因此此連接方式為極具熱效率之連接方式。但是,請注意,在各種實施例中可考慮此等組態中之任一者,以及純串聯配置或串聯/並聯配置。雖然介電層可大幅增加總熱阻,藉此使裝置之接面溫度升高且不利地影響輸出功率及/或效率,但預期,可藉由諸如原子層沈積來生長約幾微米厚或更薄之極薄介電層,且在諸如銅之材料上提供極低熱阻抗層,以達成在串聯/並聯型配置中電絕緣的目的。此介電質可選自氧化物、氮化物、碳化物、陶瓷、鑽石、聚合物(ALD聚醯亞胺)、DLC等之群組。 In one embodiment of the invention, the LEDs of LED array 330 are placed substantially electrically in parallel, or have at least two LEDs in parallel on a preferred common anode substrate. Since the heat-resistant dielectric layer is not required to be added between the substrate of the LED and the substrate as required in the conventional series configuration or the conventional series/parallel configuration to achieve electrical isolation, the connection is extremely thermally efficient. The connection method. However, it is noted that any of these configurations may be considered in various embodiments, as well as a pure series configuration or a series/parallel configuration. Although the dielectric layer can substantially increase the total thermal resistance, thereby increasing the junction temperature of the device and adversely affecting the output power and/or efficiency, it is expected that it can be grown by a few microns or more by, for example, atomic layer deposition. A thin, very thin dielectric layer and a very low thermal resistance layer on a material such as copper for electrical insulation in a series/parallel configuration. The dielectric may be selected from the group of oxides, nitrides, carbides, ceramics, diamonds, polymers (ALD polyimine), DLC, and the like.

根據本發明之各種實施例,一個目標為維持LED之磊晶p-n接面之間或至少較佳裸晶粒之底部的極低熱阻,該熱 阻為約0.015 K-cm2/W,但範圍可為0.0010-15 K-cm2/W且通常為約0.024 K-cm2/W。可考慮金屬、介電質、陶瓷或聚合物層之箔、接合墊、跡線等之極薄層,但歸因於由此等額外層導致的熱阻增加(其不可避免地導致接面溫度之增加,同時效率相應地減少),該等層並非較佳的。可使用用於減少與磊晶結構生長及設計相關聯之電流下降的各種構件(諸如,較厚之n或p罩蓋層)以及在最近出版且由Philips(Netherlands)及RPI(USA)之雇員所著之科學期刊中找到的最新技術水準之構件(例如,新量子障壁設計,減少非輻射再接合中心等),以及其他構件(見,例如Rensselaer Magazine,「New LED Drops the 'Droop'」2009年3月及Compound Semiconductor Magazine,「LED Droop:Do Defects Play A Major Role?」2010年7月14日,其兩者為達成所有目的特此以引用之方式全文併入)。目前考慮在同質GaN晶圓上且甚至極性GaN晶圓上之磊晶生長,以減少或消除電流下降。 In accordance with various embodiments of the present invention, one objective is to maintain an extremely low thermal resistance between the epitaxial pn junctions of the LEDs or at least the bottom of the preferred die, which is about 0.015 K-cm 2 /W, but The range can be from 0.0010-15 K-cm 2 /W and is typically about 0.024 K-cm 2 /W. Considering very thin layers of foils, bond pads, traces, etc. of metals, dielectrics, ceramics or polymer layers, but due to the increased thermal resistance caused by such additional layers (which inevitably leads to junction temperatures) The increase is accompanied by a corresponding decrease in efficiency, and the layers are not preferred. Various components (such as thicker n or p cap layers) for reducing current drops associated with epitaxial structure growth and design, as well as recently published and employees by Philips (Netherlands) and RPI (USA), may be used. The latest state-of-the-art components found in scientific journals (eg, new quantum barrier design, reduced non-radiative re-bonding centers, etc.), and other components (see, for example, Rensselaer Magazine, "New LED Drops the 'Droop'" 2009 In March and Compound Semiconductor Magazine, "LED Droop: Do Defects Play A Major Role?" on July 14, 2010, both of which are hereby incorporated by reference in their entirety for all purposes. Epitaxial growth on homogeneous GaN wafers and even on polar GaN wafers is currently considered to reduce or eliminate current drops.

因此,根據各種實施例,因為LED係直接安裝的(較佳用2.5 μm厚之SnCu焊料),且熱散播器(若使用)及箔層為薄的,且其較佳不需要使用介入介電層,因此在LED接面與含有在較佳化學蝕刻之微通道中流動的液體的經蝕刻(例如,化學蝕刻)箔層之間存在極低熱阻之路徑。在微通道之製造中,亦可考慮其他蝕刻或光微影或加工製程。 Thus, according to various embodiments, because the LEDs are directly mounted (preferably 2.5 μm thick SnCu solder), and the heat spreader (if used) and the foil layer are thin, and preferably do not require the use of intervening dielectric The layer thus has a very low thermal resistance path between the LED junction and the etched (e.g., chemically etched) foil layer containing the liquid flowing in the preferably chemically etched microchannel. Other etching or photolithography or processing processes may also be considered in the fabrication of microchannels.

根據一實施例,LED陣列330之LED係直接接合的,(亦即,除了(例如)較佳預先塗覆(例如,藉由濺鍍沈積方式) 至LED之底面的薄的預先濺鍍之焊料層之外,在LED與微通道冷卻器410之間無實質介入層(無論是塊體材料、箔、薄膜或其他材料)。 According to an embodiment, the LEDs of the LED array 330 are directly bonded (ie, except for, for example, preferably pre-coated (eg, by sputtering deposition) There is no substantial intervening layer (whether bulk material, foil, film or other material) between the LED and the microchannel cooler 410 beyond the thin pre-sputtered solder layer on the underside of the LED.

如下文更詳細地描述,可藉由一或多個O形環420形成一分離器墊圈314以將共同陽極基板層317密封至本體305且亦防止冷卻劑實質上在LED陣列330正下方繞過。雖然在此圖及其他圖中,O形環420a-c不呈現為壓縮的,但應瞭解,在真實世界操作中,其將實際上為壓縮的以執行其防止流體在通道間繞過或進入外部環境的既定功能。在本實例中,分離器墊圈314實質上平行於微通道冷卻器(無論是垂直或是水平地分層)的擴散接合之箔層(圖中未展示)的底面(與發光方向相反)且與該底面在同一Z軸平面中。分離器墊圈314之橫截面較佳實質上為圓的,可由軟的硬度計聚矽氧製成,且可由Apple Rubber USA製造。在替代實施例中,分離器墊圈314之橫截面可為正方形或矩形的。 As described in more detail below, a separator gasket 314 can be formed by one or more O-rings 420 to seal the common anode substrate layer 317 to the body 305 and also prevent coolant from substantially bypassing directly below the LED array 330. . Although O-rings 420a-c are not rendered compressive in this and other figures, it should be understood that in real world operation, they will actually be compressed to perform their prevention of fluid bypassing or entering between channels. The established function of the external environment. In the present example, the separator gasket 314 is substantially parallel to the bottom surface of the diffusion bonded foil layer (not shown) of the microchannel cooler (either vertically or horizontally layered) (as opposed to the direction of illumination) and The bottom surface is in the same Z-axis plane. The cross section of the separator gasket 314 is preferably substantially circular, can be made of a soft durometer, and can be manufactured by Apple Rubber USA. In an alternate embodiment, the cross section of the separator washer 314 can be square or rectangular.

參考本實例中所說明之LED驅動器PCB 310a-b的多層建構,在一實施例中,約2.5 mm厚(範圍係0.1 mm至10 mm)且可購自Cofan Canada的銅(或鋁、聚合物、填充聚合物等)金屬芯PCB板係由多個層建構以使PCB之大小保持最小。高功率FET及閘極驅動器及電感器及電阻器及電容器可安裝於最接近於金屬芯的較佳Thermagon USA層上。實際上,在一些實施例中,此層可為有窗的或帶芯的,使得FET(或其他驅動器PCB組件)可在具有或不具有附接螺絲之情況下直接安裝至金屬芯。亦可儘可能接近金屬芯地安 裝可購自National Semiconductor USA的LM 3434或LM 3433(僅為實例)系列LED共同陽極驅動器,此意謂最小介電層厚度(若有)可存在於該等組件與金屬芯之間。亦應考慮相等之跡線路徑長度及緊密之組件間距以實現高效之電操作及穩定操作。自訂之繞線式電感器可極大地增加驅動子總成效率。電感器可以某方式定向以使具有較佳共同底板(例如,陽極體315a-b)的單獨驅動器(例如,8或15個)之磁場有利地彼此相互作用以增加較佳恆定電流驅動器之效率(但可考慮恆定電壓之驅動器,尤其具有特殊電路者),該較佳共同底板亦可與微冷卻器撓曲電路總成之共同陽極基板317共用。可考慮脈寬調變(PWM)恆定電流驅動器,但PWM在高電流下歸因於電流漣波而對LED壽命具有有害影響,應考慮電感器與LED之間的額外電容器。或者,可將一鐵基板置於電感器之間以減少電感器或其他組件之間的可為定向及間距相依的非所要相互作用。最佳地,可考慮來自VASHAY,India之屏蔽的現成(OFS)電感器。 Referring to the multilayer construction of the LED driver PCBs 310a-b illustrated in this example, in one embodiment, copper (or aluminum, polymer) of about 2.5 mm thick (range 0.1 mm to 10 mm) and available from Cofan Canada The metal core PCB board is constructed of multiple layers to keep the size of the PCB to a minimum. High power FET and gate drivers and inductors and resistors and capacitors can be mounted on the preferred Thermogon USA layer closest to the metal core. In fact, in some embodiments, this layer can be windowed or cored such that the FET (or other driver PCB assembly) can be mounted directly to the metal core with or without attachment screws. Also as close as possible to the metal core A series of LED common anode drivers available from National Semiconductor USA, LM 3434 or LM 3433 (for example only), means that a minimum dielectric layer thickness, if any, may be present between the components and the metal core. Equal trace path lengths and tight component spacing should also be considered for efficient electrical operation and stable operation. Custom wound inductors can greatly increase drive assembly efficiency. The inductors can be oriented in a manner such that the magnetic fields of individual drivers (e.g., 8 or 15) having a preferred common backplane (e.g., anode bodies 315a-b) advantageously interact with each other to increase the efficiency of the preferred constant current driver ( However, a constant voltage driver, especially a special circuit, can be considered, and the preferred common substrate can also be shared with the common anode substrate 317 of the micro-cooler deflection circuit assembly. Pulse width modulation (PWM) constant current drivers can be considered, but PWM is detrimental to LED lifetime due to current chopping at high currents, and additional capacitors between the inductor and the LED should be considered. Alternatively, an iron substrate can be placed between the inductors to reduce undesired interactions between the inductors or other components that can be oriented and pitch dependent. Optimally, an off-the-shelf (OFS) inductor from VASHAY, India can be considered.

在燈體306之背面(主要輸入水及電能輸入/輸出源所位於之側)上,較佳金屬(銅、鋁、複合物)MCPCB芯可具有在兩個MCPCB(可購自Cofan,Canada的具有金屬芯之PCB)芯之間的旋緊或錫焊之連接桿(或陽極十字板)以產生一空間及/或具有堅固之安裝板以用於陽極之單線連接,該單線連接將接著延伸至連接至交流電源的主要AC/DC前端電源供應器。 On the back side of the lamp body 306 (on the side where the main input water and power input/output sources are located), a preferred metal (copper, aluminum, composite) MCPCB core can have two MCPCBs (available from Cofan, Canada). a screw or soldered connecting rod (or anode cross plate) between the cores of the metal core to create a space and/or a sturdy mounting plate for the single wire connection of the anode, the single wire connection will then extend To the main AC/DC front-end power supply connected to AC power.

在一實施例中,LED驅動器PCB 310a-b之金屬芯為接地 平面-在每一LED驅動器PCB 310a-b上可存在一個以上之接地平面。因此,PCB之邊緣較佳夾緊或錫焊至共同陽極基板層317之接地平面。此較佳藉由允許共同陽極基板層317延伸或懸垂於本體305之每一側上來完成,使得共同陽極基板層317之陽極側可觸碰LED驅動器PCB 310a-b之陽極側(邊緣)且與該陽極側電連通,且共同陽極基板層317(例如,頂部箔層)之陰極側可較佳地觸碰與LED驅動器PCB 310a-b電連通的個別陰極段的適當頂部陰極區域且與該頂部陰極區域電連通。 In an embodiment, the metal core of the LED driver PCB 310a-b is grounded Plane - There may be more than one ground plane on each LED driver PCB 310a-b. Therefore, the edge of the PCB is preferably clamped or soldered to the ground plane of the common anode substrate layer 317. This is preferably accomplished by allowing the common anode substrate layer 317 to extend or hang over each side of the body 305 such that the anode side of the common anode substrate layer 317 can touch the anode side (edge) of the LED driver PCBs 310a-b and The anode side is in electrical communication, and the cathode side of the common anode substrate layer 317 (eg, the top foil layer) can preferably touch the appropriate top cathode region of the individual cathode segments in electrical communication with the LED driver PCBs 310a-b and with the top The cathode regions are in electrical communication.

圖5A至圖5B提供說明LED陣列330及其與圖2之UV LED燈頭模組200之共同陽極基板317的界面的進一步放大視圖。在此等視圖中,LED陣列330之高填充因數、個別LED之電耦接、反射器201之基底與LED之表面的接近性及撓曲電路510之各個層變得顯而易見。另外,在此等視圖中,微通道冷卻器410之較佳垂直定向之箔層變得可見。 5A-5B provide further enlarged views illustrating the interface of LED array 330 and its common anode substrate 317 with UV LED lamp head module 200 of FIG. In these views, the high fill factor of the LED array 330, the electrical coupling of the individual LEDs, the proximity of the substrate of the reflector 201 to the surface of the LED, and the various layers of the flex circuit 510 become apparent. Additionally, in these views, the preferred vertically oriented foil layers of the microchannel cooler 410 become visible.

根據一實施例,共同陽極基板層317可包括一用於傳遞來自LED陣列330之熱的微通道冷卻器410、一整合式經蝕刻罩蓋層525及一實心罩蓋層530。在一實施例中,微通道冷卻器410之寬度僅比LED陣列330稍寬(例如,小於約400微米(範圍係50微米至2,000微米))。在一實施例中,微通道冷卻器410之總寬度為LED陣列330之總寬度的約1.2倍(範圍係1、1.1、1.3、1.4、1.5、1.6、1.7、1.9、2、2.1、2.2、2.3、2.4至2.5倍)。在當前內容背景中,電腦模型化表明將微通道冷卻器410之總寬度增加至LED陣列330之寬 度的幾乎兩倍(2倍)的寬度使峰值熱阻減少僅約5%。 According to an embodiment, the common anode substrate layer 317 can include a microchannel cooler 410 for transferring heat from the LED array 330, an integrated etched cap layer 525, and a solid cap layer 530. In one embodiment, the width of the microchannel cooler 410 is only slightly wider than the LED array 330 (eg, less than about 400 microns (range 50 microns to 2,000 microns)). In one embodiment, the total width of the microchannel cooler 410 is about 1.2 times the total width of the LED array 330 (ranges 1, 1.1, 1.3, 1.4, 1.5, 1.6, 1.7, 1.9, 2, 2.1, 2.2, 2.3, 2.4 to 2.5 times). In the context of the current content, computer modeling indicates that the overall width of the microchannel cooler 410 is increased to the width of the LED array 330. Almost twice (2 times) the width of the degree reduces the peak thermal resistance by only about 5%.

微通道冷卻器410可包括在微通道冷卻器410之頂面下方的熱散播器層540(亦稱作,熱擴散層或散熱頂面)(例如,約125微米厚(範圍係自小於500微米、小於250微米、小於200微米、小於150微米、小於100微米、小於50微米至小於25微米)、複數個主入口/出口微通道(例如,主入口微通道411)及各種入口歧管通路、熱傳遞通路及出口歧管通路。顯著地,在當前內容背景中,熱散播器層540實際上提供很少之真實熱散播;然而,其確實提供極短之熱擴散長度(LED之底部與微通道冷卻器410之熱傳遞通道(圖中未展示)中之最接近該底部的熱傳遞通道之間的距離)。例示性熱傳遞通道、其定向、流動方向及尺寸由以引用方式併入本文之美國專利第7,836,940號提供。 The microchannel cooler 410 can include a heat spreader layer 540 (also referred to as a thermal diffusion layer or a heat sink top) below the top surface of the microchannel cooler 410 (eg, about 125 microns thick (ranging from less than 500 microns) , less than 250 microns, less than 200 microns, less than 150 microns, less than 100 microns, less than 50 microns to less than 25 microns, a plurality of main inlet/outlet microchannels (eg, main inlet microchannels 411), and various inlet manifold pathways, The heat transfer path and the exit manifold path. Significantly, in the context of the current content, the heat spreader layer 540 actually provides very little true heat spread; however, it does provide a very short heat spread length (bottom and micro of the LED) The distance between the heat transfer channels of the channel cooler 410 (not shown) that is closest to the bottom.) Exemplary heat transfer channels, their orientation, flow direction, and dimensions are incorporated herein by reference. U.S. Patent No. 7,836,940 is provided.

微通道冷卻器410之頂面可將微通道冷卻器410與LED陣列330耦接。主入口微通道(圖中未展示)可經組態以收納流體並將流體引導至微通道冷卻器410內之內部通路(包括熱傳遞通路)中。該等熱傳遞通路可經組態以收納流體並在實質上平行於頂面及實質上垂直之各種輸入及輸出歧管通路的方向上引導流體。該等出口歧管通路可經組態以收納流體並將流體引導至一或多個主出口微通道(例如,主出口微通道411)。 The top surface of the microchannel cooler 410 can couple the microchannel cooler 410 to the LED array 330. A main inlet microchannel (not shown) can be configured to receive fluid and direct the fluid into internal passages (including heat transfer passages) within the microchannel cooler 410. The heat transfer passages can be configured to receive fluid and direct the fluid in a direction substantially parallel to the top and substantially vertical input and output manifold passages. The outlet manifold passages can be configured to receive fluid and direct the fluid to one or more main outlet microchannels (eg, main outlet microchannels 411).

在一實施例中,微通道冷卻器410可由其中形成有用於引導冷卻劑流之內部通路及歧管的複數個經蝕刻箔片(例如,箔片520)形成。在當前實例中,藉由將組合之經蝕刻 罩蓋層525及實心罩蓋層530擴散接合至微通道冷卻器410來形成單片微通道冷卻器本體。如圖5A中所展示,經蝕刻罩蓋層525之箔層較佳比微通道冷卻器410之箔層520厚。在一實施例中,可加工罩蓋層525及530。 In an embodiment, the microchannel cooler 410 may be formed from a plurality of etched foils (eg, foil 520) having internal passages and manifolds therein for directing coolant flow. In the current example, by etching the combination The cap layer 525 and the solid cap layer 530 are diffusion bonded to the microchannel cooler 410 to form a monolithic microchannel cooler body. As shown in FIG. 5A, the foil layer of the etched cap layer 525 is preferably thicker than the foil layer 520 of the microchannel cooler 410. In an embodiment, the cover layers 525 and 530 can be processed.

在擴散接合之箔層(例如,箔層520)以其邊緣位於LED之底部部分下的方式(如圖5A及圖5B中所說明)來垂直堆疊(且擴散接合在一起)的實施例中,該等LED較佳直接接合至垂直定向之微冷卻器(具有或不具有諸如ENIG或ENEPIG(Superior plating,USA)之鍍層),且接合至較佳兩個經加工之純(C101或C110)銅塊,具有鏡像(匹配)之巨型冷卻劑流及/或冷卻劑引導通道,「捏縮」垂直放置的經蝕刻擴散接合之微通道冷卻器。每一銅塊(其自身可為擴散接合之箔之堆疊或一實心塊)可在一個步驟中擴散接合至垂直堆疊之箔微通道冷卻器410之相對側。換言之,箔層及塊較佳全部在一個步驟中被擴散接合。接著較佳對所得堆疊進行機械切除,且接著該總成可被稱作微通道冷卻器總成,而微通道冷卻器總成之部分可被稱作外罩蓋層部分(525及530)及微通道冷卻器部分410。在執行機械切除製程之前且在表面修整製程(例如,電鍍製程)之前,較佳對微通道冷卻器總成(例如,外罩蓋層部分525及530)鑽孔。若利用電鍍製程來達成提供用於LED之可錫焊表面及/或用於附接至較佳LED頂側上之LED接合墊的線之可線接合表面的目的,則較佳提供允許實現O形環凹槽(較佳利用相同之前述分離器墊圈/O形環設計)的經加工之聚合物面板, 該O形環凹槽允許微通道冷卻器總成被夾緊至聚合物塊且放入至電鍍浴中而不使溶液進入微通道之ID中。此製程亦可允許在多個區中電鍍非腐蝕性表面,在最終產品中陽極及/或陰極匯流排條304a-b可最終夾緊或錫焊至該多個區。LED驅動器PCB 310a-b亦可被邊緣電鍍以達成腐蝕減少及低電壓降之目的。 In embodiments where the diffusion bonded foil layer (eg, foil layer 520) is vertically stacked (and diffusion bonded together) in such a manner that its edges are below the bottom portion of the LED (as illustrated in Figures 5A and 5B), The LEDs are preferably directly bonded to a vertically oriented micro-cooler (with or without a coating such as ENIG or ENEPIG (Superior plating, USA)) and bonded to preferably two processed pure (C101 or C110) copper The block, having a mirrored (matched) giant coolant stream and/or a coolant guiding channel, "squeezes" the vertically placed etched diffusion bonded microchannel cooler. Each copper block (which may itself be a stack of diffusion bonded foils or a solid block) may be diffusion bonded to the opposite side of the vertically stacked foil microchannel cooler 410 in one step. In other words, the foil layer and the block are preferably all diffusion bonded in one step. The resulting stack is then preferably mechanically ablated, and then the assembly can be referred to as a microchannel cooler assembly, and portions of the microchannel cooler assembly can be referred to as outer cover portions (525 and 530) and micro Channel cooler portion 410. The microchannel cooler assembly (e.g., outer cover portions 525 and 530) is preferably drilled prior to performing the mechanical ablation process and prior to the surface finishing process (e.g., electroplating process). If an electroplating process is utilized to achieve the purpose of providing a solderable surface for the LED and/or a wire bondable surface for attaching to the LED bond pad on the top side of the preferred LED, it is preferred to provide for O. a machined polymer panel with a ring groove (preferably using the same separator washer/O-ring design described above), The O-ring groove allows the microchannel cooler assembly to be clamped to the polymer block and placed into the plating bath without the solution entering the ID of the microchannel. This process may also allow for the plating of non-corrosive surfaces in a plurality of zones in which the anode and/or cathode busbars 304a-b may be eventually clamped or soldered to the plurality of zones. The LED driver PCBs 310a-b can also be edge plated for corrosion reduction and low voltage drop.

微通道冷卻器總成可經受淬火或退火或沈澱硬化製程,使得純的硬化銅(其具有比Glidcop高約10%之導熱性)可用於箔層(例如,箔層520)中。純銅將增強焊料潤濕。 The microchannel cooler assembly can be subjected to a quenching or annealing or precipitation hardening process such that pure hardened copper, which has a thermal conductivity about 10% higher than Glidcop, can be used in the foil layer (eg, foil layer 520). Pure copper will enhance solder wetting.

在擴散接合之箔層(例如,箔層520)被水平地定向之實施例中,可在與LED(例如,LED 531)之底部相同的平面中蝕刻微通道冷卻器410之微通道,使得可在箔層中蝕刻或甚至加工主入口/出口微通道(例如,通道411)。微通道冷卻器410之內部微通道可貫穿所有或實質上所有擴散接合之箔層(例如,箔層520)實質上與所有層總共之厚度一樣深地形成,及/或可考慮停止於熱散播器層540之底部附近或底部處。 In embodiments where the diffusion bonded foil layer (eg, foil layer 520) is oriented horizontally, the microchannels of microchannel cooler 410 may be etched in the same plane as the bottom of the LED (eg, LED 531) such that The main inlet/outlet microchannel (eg, channel 411) is etched or even processed in the foil layer. The inner microchannels of the microchannel cooler 410 may be formed through all or substantially all of the diffusion bonded foil layers (eg, foil layer 520) substantially as deep as the total thickness of all layers, and/or may be considered to cease to be thermally dispersed. Near or at the bottom of the layer 540.

現轉向反射器201之定位,介電隔片層514(諸如,聚醯亞胺膜)較佳置放於反射器201之底面與微通道冷卻器410之間。此使反射器與微通道冷卻器410熱絕緣且電絕緣,以及提供一空間以供來自LED(例如,LED 531)之線(例如,線530)裝設於反射器201下且使該線之新月形末端固定至較佳含金之電鍍銅箔層513,該銅箔層513為撓曲電路總成510之部分,其直接接合至微通道冷卻器410。因此, 在一實施例中,介電隔片層514至少與線(例如,線530)之厚度一樣厚。 Turning now to the location of the reflector 201, a dielectric spacer layer 514, such as a polyimide film, is preferably placed between the bottom surface of the reflector 201 and the microchannel cooler 410. This thermally insulates and electrically insulates the reflector from the microchannel cooler 410, and provides a space for a line (eg, line 530) from the LED (eg, LED 531) to be mounted under the reflector 201 and to cause the line The crescent shaped end is secured to a preferably gold-containing electroplated copper foil layer 513 that is part of the flex circuit assembly 510 that is bonded directly to the microchannel cooler 410. therefore, In an embodiment, the dielectric spacer layer 514 is at least as thick as the thickness of the line (eg, line 530).

使用具有搗實工具或甚至毛細管工具之自動晶粒接合器(諸如,奧地利Datacon、美國MRSI或美國Palomar),可以某方式將線(例如,線530)自動地向下搗實(彎曲)以便降低線環,直至其實質上平行(且在新月形終止點之前可能甚至觸碰在聚醯亞胺層之頂部上的箔層)於撓曲電路510-聚醯亞胺/銅箔層(亦稱作,傳導電路材料層)。壓平之線並不觸碰陽極表面或LED(例如,LED 531)之邊緣,此係因為否則可能會導致短路。可考慮其他手動及/或自動方式,諸如一個在一步驟中搗實所有線之長搗實工具,或可使用具有或不具有介電塗層之邊緣反射器自身來達成此搗實目的。此線彎曲步驟之主要目的為允許反射器置放於極接近於LED處(例如,在至少一線直徑內)且消除對反射器201之磨損、觸碰或短路。較佳可藉由非成像軟體工具,諸如可購自美國LTI Optics之Photopia來設計反射器(例如,反射器201)。反射器可具有不同操作特性,諸如短至長之工作距離或短至長之景深。反射器應為易於替換的,使得其為模組化且可交換的,且使得其為終端使用者提供最大之操作靈活性。在一實施例中,對於針對不同間隙距離而組態之反射器而言,反射器201之外部尺寸並未實質上改變。舉例而言,如下文進一步描述,針對2 mm焦平面最佳化之反射器可具有與針對53 mm、65 mm或170 mm焦平面最佳化之反射器實質上類似之外部尺寸。 Using an automatic die bonder with a tamping tool or even a capillary tool (such as Austria Datacon, US MRSI, or Palomar, USA), the wire (eg, line 530) can be automatically tamped (bent) down in a manner to reduce Wire loop until it is substantially parallel (and may even touch the foil layer on top of the polyimide layer before the end of the crescent) to the flex circuit 510-polyimine/copper foil layer (also Called, the layer of conductive circuit material). The flattening line does not touch the edge of the anode or the edge of the LED (eg, LED 531) because it may otherwise cause a short circuit. Other manual and/or automatic means may be considered, such as a long tamping tool that tampers all of the wires in one step, or may be achieved using the edge reflector itself with or without a dielectric coating. The primary purpose of this line bending step is to allow the reflector to be placed in close proximity to the LED (e.g., within at least one wire diameter) and to eliminate wear, touch, or shorting of the reflector 201. Preferably, the reflector (e.g., reflector 201) can be designed by a non-imaging software tool, such as Photopia, available from LTI Optics, USA. The reflector can have different operational characteristics, such as a short to long working distance or a short to long depth of field. The reflector should be easy to replace, making it modular and interchangeable, and providing it with maximum operational flexibility for the end user. In an embodiment, the outer dimensions of the reflector 201 do not substantially change for reflectors configured for different gap distances. For example, as further described below, a reflector optimized for a 2 mm focal plane can have an outer dimension that is substantially similar to a reflector optimized for a 53 mm, 65 mm, or 170 mm focal plane.

該等反射器(例如,反射器201)可由丙烯酸系樹脂、聚碸、聚烯烴、聚醚醯亞胺等射出模製。反射器可塗佈有鋁及/或銀,以及美國DSI之介電增強層。其亦可由聚合物或金屬擠製而成。請注意,可使用沿端對端地置放(在長度方向上串聯)之所有UV LED燈頭模組200之整個總成的長度而延伸的單片反射器半部201。此等長反射器可具有在每一末端處之經拋光且經塗佈之端蓋。反射器可由6061 A1 5軸加工而成且藉由鑽石及馬鬃刷拋光(在可拋光反射器時)且塗佈有(例如)(如所有前述實例)在390 nm至400 nm下最佳化之(例如)單層MgF2或SiO2The reflectors (e.g., reflector 201) may be injection molded from an acrylic resin, polyfluorene, polyolefin, polyetherimide, or the like. The reflector can be coated with aluminum and/or silver, as well as a dielectric enhancement layer of DSI, USA. It can also be extruded from polymers or metals. Note that a single-piece reflector half 201 extending along the length of the entire assembly of all of the UV LED base modules 200 placed end-to-end (in series in the length direction) can be used. This isometric reflector can have a polished and coated end cap at each end. The reflector can be machined from the 6061 A1 5 axis and polished by diamond and stirrup brush (when the reflector can be polished) and coated with, for example, (as in all previous examples) optimized at 390 nm to 400 nm. (for example) a single layer of MgF 2 or SiO 2 .

熟習此項技術者可想到任何長度之LED陣列330、反射器201及燈體305。如上文所描述,燈體305之一可能長度為約80 mm。此允許每邊約60 45密耳之LED或每邊68 40密耳之LED,其皆較佳成兩列,兩列之間具有約15微米(範圍係5 μm至50 μm)之間隙(例如,間隙532)。可考慮單列或多列(1至n)LED。甚至可考慮沿LED陣列之長軸具有較長長度的矩形LED。沿長軸,較佳具有小於25微米(範圍係5 μm至100 μm)之間隙(例如,間隙533)。在一實施例中,LED陣列330之LED之間的中心距中心之距離比鄰近LED之組合邊緣長度大大約10微米至20微米。 Any length of LED array 330, reflector 201, and lamp body 305 are contemplated by those skilled in the art. As described above, one of the lamp bodies 305 may have a length of about 80 mm. This allows for approximately 60 45 mil LEDs per side or 68 40 mil LEDs per side, which are preferably in two columns with a gap of about 15 microns (range 5 μm to 50 μm) between the two columns (eg , gap 532). Single or multiple column (1 to n) LEDs can be considered. Even rectangular LEDs having a longer length along the long axis of the LED array can be considered. Along the long axis, it preferably has a gap (e.g., gap 533) of less than 25 microns (range 5 μm to 100 μm). In one embodiment, the center-to-center distance between the LEDs of LED array 330 is about 10 microns to 20 microns greater than the combined edge length of adjacent LEDs.

本發明之實施例考慮撓曲電路510之金屬及介電層的總體z軸層疊(減去介電隔片層514),加上在較佳陰極撓曲電路層513上方延伸且延伸至矩形形狀之陰極線接合墊534的線層厚度(每一線之直徑或每一線條帶之厚度),該線接合 墊534展示為在LED之較佳頂面上的線(例如,線530)之焊球之下。 Embodiments of the present invention contemplate the overall z-axis stacking of the metal and dielectric layers of the flex circuit 510 (subtracting the dielectric spacer layer 514), plus extending over the preferred cathode flex circuit layer 513 and extending to a rectangular shape The thickness of the line layer of the cathode wire bond pad 534 (the diameter of each line or the thickness of each line strip), the line bonding Pad 534 is shown below the solder balls of the line (e.g., line 530) on the preferred top surface of the LED.

在一實施例中,總z軸層疊並非遠厚於LED(亦稱作,LED層)之厚度。在本發明之各種實施例中,LED層可具有約145微米之厚度,且厚度範圍係自約250微米或更少、200微米或更少、150微米或更少、100微米或更少、50微米或更少至25微米或更少。 In one embodiment, the total z-axis stack is not much thicker than the thickness of the LED (also referred to as the LED layer). In various embodiments of the invention, the LED layer can have a thickness of about 145 microns and a thickness ranging from about 250 microns or less, 200 microns or less, 150 microns or less, 100 microns or less, 50. Micron or less to 25 microns or less.

在本發明之各種實施例(其中撓曲電路層510包括介電隔片層514)中,撓曲電路層可具有約7.8密耳或更少之厚度,且厚度範圍係自約20密耳、15密耳、12密耳或更少、10密耳或更少、5密耳或更少至3密耳或更少。 In various embodiments of the invention wherein the flex circuit layer 510 includes a dielectric spacer layer 514, the flex circuit layer can have a thickness of about 7.8 mils or less and a thickness range of about 20 mils, 15 mils, 12 mils or less, 10 mils or less, 5 mils or less to 3 mils or less.

在本發明之各種實施例(其中撓曲電路層510不包括介電隔片層514)中,撓曲電路層可具有約5.3密耳或更少之厚度,且厚度範圍係自約10密耳或更少、8密耳或更少、2.5密耳或更少至0.5密耳或更少。 In various embodiments of the invention in which the flex circuit layer 510 does not include the dielectric spacer layer 514, the flex circuit layer can have a thickness of about 5.3 mils or less and a thickness range from about 10 mils. Or less, 8 mils or less, 2.5 mils or less to 0.5 mils or less.

在一實施例中,總z軸層疊並非遠厚於LED(亦稱作,LED層)之厚度,其可為裸LED或封裝好之LED的厚度。在本發明之各種實施例中,LED層可具有約145微米之厚度,且厚度範圍係自約250微米或更少、200微米或更少、150微米或更少、100微米或更少、50微米或更少至25微米或更少。 In one embodiment, the total z-axis stack is not much thicker than the thickness of the LED (also referred to as the LED layer), which may be the thickness of the bare LED or packaged LED. In various embodiments of the invention, the LED layer can have a thickness of about 145 microns and a thickness ranging from about 250 microns or less, 200 microns or less, 150 microns or less, 100 microns or less, 50. Micron or less to 25 microns or less.

在一實施例中,光學反射器201之底面介於發光裝置陣列層之頂面上方的線層之厚度的約1-1.5倍之間。在另一實施例中,光學反射器201之底面介於LED層之厚度的約0.33 至0.5倍之間。此允許反射器201極接近於LED之任一或兩個邊緣而裝設或相對於LED之頂面來裝設,此進而藉由最大化由反射器201控制的所發射光子之數目且最小化藉由進入反射器201之下而逃離反射器201的所發射光子的數目來維持照射度。將反射器201定位於接近於LED邊緣處亦允許在高度方面更緊密之反射器。反射器201與LED陣列330之此接近性亦允許撓曲電路510之較短長度陰極層513,此亦允許陰極層513為薄的且仍載運高電流而無過多阻抗。根據通常所知之光學原理,反射器邊緣距LED愈遠,反射器需要愈高。儘管較高反射器可達成稍高之照射度,但在某些實施中,較高反射器可為不切實際的。 In one embodiment, the bottom surface of the optical reflector 201 is between about 1-1.5 times the thickness of the line layer above the top surface of the array of light-emitting devices. In another embodiment, the bottom surface of the optical reflector 201 is between about 0.33 of the thickness of the LED layer. Between 0.5 and 0.5 times. This allows the reflector 201 to be mounted in close proximity to either or both edges of the LED or mounted relative to the top surface of the LED, which in turn minimizes the number of emitted photons controlled by the reflector 201. The degree of illumination is maintained by the number of emitted photons that escape the reflector 201 below the reflector 201. Positioning the reflector 201 near the edge of the LED also allows for a more compact reflector in height. This proximity of the reflector 201 to the LED array 330 also allows the shorter length cathode layer 513 of the flex circuit 510, which also allows the cathode layer 513 to be thin and still carry high current without excessive impedance. According to the generally known optical principle, the farther the reflector edge is from the LED, the higher the reflector needs to be. While higher reflectors may achieve slightly higher illumination, in some implementations, higher reflectors may be impractical.

另外,撓曲電路510之製造為廉價的且其極緊密且薄,因此,其非常適合於用於本發明之實施例的內容背景中,其中撓曲電路之金屬及介電層的總體z軸層疊需要最小化。Lenthor(USA)為極好撓曲電路製造商之實例。在一實施例中,如下文進一步描述,撓曲電路510可延伸超過微通道冷卻器總成且可連接(直接地或間接地)至外部DC/DC及/或電源供應器。 In addition, the flex circuit 510 is inexpensive to manufacture and extremely compact and thin, and thus, it is well suited for use in the context of embodiments of the present invention in which the overall z-axis of the metal and dielectric layers of the flex circuit Cascading needs to be minimized. Lenthor (USA) is an example of a manufacturer of excellent flex circuit. In an embodiment, as further described below, the flex circuit 510 can extend beyond the microchannel cooler assembly and can be connected (directly or indirectly) to an external DC/DC and/or power supply.

如早先所描述,本發明之實施例的另一新穎特徵包括使用較佳擴散接合(但可錫焊或膠黏或銅焊該等層)、較佳經蝕刻箔微通道冷卻器410,該冷卻器410較佳具有至少一短的經橫向蝕刻之通道(跨越LED陣列330之短方向(寬度))之高縱橫比,該(等)通道可熱並聯且較佳越過長長度以並排方式排列,其中冷卻劑在較佳實質上平行於陣列330之最 短維度(通常為寬度而非長度維度)之方向上跨越LED陣列330及在LED陣列330之下流動。在其他實施例中,冷卻劑可在沿LED陣列330及/或冷卻器410之長度的方向上流動,且其可在一些區域中垂直地流動(朝向LED之底面)。在一實施例中,許多通道可在LED之底部之下流動且極接近於LED之底部,僅由約125 μm之銅(範圍係1 μm至1,000 μm)加上一薄焊料層分離,該薄焊料層用以將LED直接接合至共同陽極基板317。另外,可考慮多方向蝕刻之冷卻劑路徑及定向(個別地或成群地),其亦描述為內部熱傳遞通道,平行、成直角、垂直地或水平地延伸,連接或不連接或兩者之某組合,相對於LED陣列330之長度或寬度或某組合或兩者及/或LED之底面來定向。 As described earlier, another novel feature of an embodiment of the present invention includes the use of a preferred diffusion bonding (but solderable or adhesive or brazing of the layers), preferably an etched foil microchannel cooler 410, which is cooled. The device 410 preferably has a high aspect ratio of at least one short laterally etched channel (crossing the short direction (width) of the LED array 330), the channels being thermally parallel and preferably over long lengths arranged side by side. Wherein the coolant is preferably substantially parallel to the array 330 The short dimension (typically the width rather than the length dimension) traverses and under the LED array 330 in the direction of the LED array 330. In other embodiments, the coolant may flow in a direction along the length of the LED array 330 and/or the cooler 410, and it may flow vertically (toward the bottom surface of the LED) in some regions. In one embodiment, a plurality of channels can flow below the bottom of the LED and in close proximity to the bottom of the LED, separated by only about 125 μm of copper (ranging from 1 μm to 1,000 μm) plus a thin layer of solder. A solder layer is used to bond the LEDs directly to the common anode substrate 317. In addition, multi-directional etched coolant paths and orientations (individually or in groups) may be considered, which are also described as internal heat transfer channels that extend parallel, at right angles, vertically or horizontally, with or without connection, or both. Some combination is oriented relative to the length or width of the LED array 330 or some combination or both and/or the underside of the LED.

根據一實施例,內部熱傳遞通道可經定向,以使得(i)在LED陣列之最短維度上的兩個或兩個以上相鄰LED具有在每一LED下的實質上獨立之熱傳遞通道,及(ii)獨立地冷卻此等通道上方之LED(亦即,在每一LED下的通道群組實質上並不彼此對流連通或與相鄰LED下的通道群組對流連通)。因此,兩個或兩個以上相鄰LED被稱為係以熱並聯而非熱串聯方式來冷卻的。若實質上在LED正下方流動之通道經混合,或若一共同通道實質上在兩個LED正下方流動,則將導致熱串聯。 According to an embodiment, the internal heat transfer channels can be oriented such that (i) two or more adjacent LEDs in the shortest dimension of the LED array have substantially independent heat transfer channels under each LED, And (ii) independently cooling the LEDs above the channels (ie, the groups of channels under each LED are not substantially convectively connected to each other or convectively communicating with groups of channels under adjacent LEDs). Thus, two or more adjacent LEDs are said to be cooled in a thermal parallel rather than a thermal series. If the channels flowing substantially below the LED are mixed, or if a common channel is flowing substantially directly below the two LEDs, this will result in thermal series.

微通道冷卻器410之箔層(例如,箔層520)較佳實質上為銅,且其較佳具有約1%(範圍係0.1%至10%)之諸如,Al2O3且一般被稱作Glidcop的穿插陶瓷材料,已知Glidcop在經 受高擴散接合溫度之後仍維持其剛性、強度及形狀。現在具有與純銅幾乎相同之導熱性的Glidcop。 The foil layer of microchannel cooler 410 (e.g., foil layer 520) is preferably substantially copper, and preferably has about 1% (range 0.1% to 10%) such as Al 2 O 3 and is generally referred to as As a Glidcop interpenetrating ceramic material, Glidcop is known to maintain its rigidity, strength and shape after being subjected to high diffusion bonding temperatures. Glidcop now has almost the same thermal conductivity as pure copper.

在一實施例中,微通道冷卻器410被建構為對應於直接安裝式LED陣列330之高縱橫比的高縱橫比裝置。亦即,冷卻器410之長度比其寬度長,LED陣列330沿該長度安裝,且冷卻器410自身通常具有並排之許多短通道且具有在通常平行於LED陣列330之寬度且與冷卻器410之長軸(最長維度)垂直的方向上流動的冷卻劑,且該冷卻器410可具有彼此並排定位之1至n個通道。內部微通道可經定向以形成與LED陣列330之長軸(長度)或短軸(寬度)中之任一者或兩者平行、成直角、水平及/或垂直的歧管。箔(例如,箔層520)接著較佳堆疊在彼此之頂部上(或堆疊在一起),其中每一通道較佳位於處於鄰近箔正上方之箔上或箔中的通道之下,無論該等箔是否以任何垂直或水平或在三維空間中以其他有角或旋轉定位之定向來堆疊。在一實施例中,LED直接安裝至由多個擴散接合之堆疊箔積層之邊緣(當箔垂直堆疊時)形成的表面(例如,共同陽極基板)。較佳地,在將LED陣列330錫焊至此表面之前,首先使由箔積層之邊緣形成的該表面變平。 In one embodiment, the microchannel cooler 410 is constructed to correspond to a high aspect ratio high aspect ratio device of the direct mount LED array 330. That is, the length of the cooler 410 is longer than its width, the LED array 330 is mounted along the length, and the cooler 410 itself typically has a plurality of short channels side by side and has a width generally parallel to the LED array 330 and with the cooler 410 The coolant flowing in the vertical direction in the long axis (longest dimension), and the cooler 410 may have 1 to n channels positioned side by side with each other. The inner microchannels can be oriented to form a manifold that is parallel, at right angles, horizontally, and/or perpendicular to either or both of the major axis (length) or minor axis (width) of the LED array 330. The foils (e.g., foil layer 520) are then preferably stacked on top of each other (or stacked together), wherein each channel is preferably located on a foil that is adjacent the foil directly above or in the foil, regardless of such Whether the foils are stacked in any vertical or horizontal orientation or in other three-dimensional orientations with angular or rotational orientation. In an embodiment, the LEDs are mounted directly to a surface (eg, a common anode substrate) formed by the edges of a plurality of diffusion bonded stacked foil stacks (when the foils are stacked vertically). Preferably, the surface formed by the edges of the foil laminate is first flattened prior to soldering the LED array 330 to the surface.

作為非限制性實例,LED可跨越寬度安裝成兩個(1-n)列,且沿列之長度有約50至300個LED。列之長度較佳為冷卻器410之長度的約90%(10%至100%)或更多。亦即,LED陣列330儘可能接近微通道冷卻器410之邊緣地延伸。以此方式,在串聯連接之UV LED燈頭模組200中無顯著照 射度間隙。在短工作距離(~2 mm)之內容背景中,此組態最有益。 As a non-limiting example, LEDs can be mounted in two (1-n) columns across the width and from about 50 to 300 LEDs along the length of the column. The length of the column is preferably about 90% (10% to 100%) or more of the length of the cooler 410. That is, the LED array 330 extends as close as possible to the edge of the microchannel cooler 410. In this way, there is no significant photo in the series connected UV LED lamp head module 200. The radiance gap. This configuration is most beneficial in the context of short working distances (~2 mm).

較佳地,在LED陣列330之LED之下延伸的內部微通道具有大致相等之流,使得LED之接面大致處於相同溫度。對於一些專門之應用,尤其在LED具有不同波長時,在一些通道中流可不同以使LED更熱或更冷地運作,因為短波長LED可能需要更多冷卻。請注意,並非所有實施例皆需要流經微通道冷卻器之冷卻劑100%地流經微通道冷卻器之熱傳遞通道。 Preferably, the internal microchannels extending below the LEDs of LED array 330 have substantially equal flow such that the junctions of the LEDs are substantially at the same temperature. For some specialized applications, especially when the LEDs have different wavelengths, the flow may be different in some channels to make the LEDs operate hotter or colder, as short wavelength LEDs may require more cooling. Please note that not all embodiments require that the coolant flowing through the microchannel cooler flow 100% through the heat transfer channel of the microchannel cooler.

根據一實施例,較佳使用CFD來設計形成於本體305之基底中的主要入口及出口冷卻劑歧管以視需要來增強或收縮冷卻劑流以實現在微通道中之前述所要的幾乎相等之流。較佳由MicroVection USA來進行CFD。可藉由使通道更深或更寬或其兩者來完成增強,或相反,可藉由使通道更淺或更窄或其兩者來完成收縮。所有此等幾何形狀可為三維的,具有簡單或複合之輪廓或幾乎筆直或尖銳之幾何形狀。再一次,論及微通道,其可具有使流平衡及或減少通道與LED接面之間的熱阻所需之不同大小、形狀、深度、寬度、數目、中心距中心之間距、經蝕刻箔層之數目、曲線、突起、波形曲線、鷗型翼等。 According to an embodiment, the CFD is preferably used to design the primary inlet and outlet coolant manifolds formed in the substrate of the body 305 to enhance or contract the coolant flow as needed to achieve the aforementioned almost equal in the microchannels. flow. CFD is preferably performed by MicroVection USA. The enhancement can be accomplished by making the channel deeper or wider or both, or conversely, by making the channel shallower or narrower or both. All of these geometries can be three-dimensional, with simple or composite contours or almost straight or sharp geometries. Again, referring to microchannels, which may have different sizes, shapes, depths, widths, numbers, center-to-center spacing, and etched foil required to balance the flow and or reduce the thermal resistance between the channels and the LED junctions. Number of layers, curves, protrusions, undulations, gull wings, etc.

圖6為圖2之UV LED燈頭模組200之本體305的頂部部分的分解放大等角剖示圖且說明圖2之UV LED燈頭模組200的各個層。在此實例中,LED陣列封裝318包括介電隔片層514、陰極層513、介電分離器層512、黏著層511及共同 陽極基板層317。撓曲電路510亦可包括陽極層(圖中未展示)。如上文所描述,層511至514可共同地由Pyralux系列產品形成撓曲電路510。在一實施例中,撓曲電路510可能不包括介電隔片層514,介電隔片層514可接合至反射器201之底面或簡單地在反射器之底面與撓曲電路510之頂面之間自由浮動或接合至撓曲電路510之頂面。在替代實施例中,具有硬質介電質(例如,FR4、陶瓷、玻璃或其類似者)之硬質撓曲或硬質電路可替換撓曲電路510。 6 is an exploded enlarged isometric cross-sectional view of the top portion of the body 305 of the UV LED lamp head module 200 of FIG. 2 and illustrating the various layers of the UV LED lamp head module 200 of FIG. In this example, the LED array package 318 includes a dielectric spacer layer 514, a cathode layer 513, a dielectric separator layer 512, an adhesive layer 511, and a common Anode substrate layer 317. The flex circuit 510 can also include an anode layer (not shown). As described above, layers 511 through 514 can collectively form flex circuit 510 from the Pyralux family of products. In an embodiment, the flex circuit 510 may not include a dielectric spacer layer 514 that may be bonded to the bottom surface of the reflector 201 or simply to the top surface of the reflector and the top surface of the flex circuit 510. Free floating or bonding between the top surfaces of the flex circuit 510. In an alternate embodiment, a rigid flex or rigid circuit having a hard dielectric (eg, FR4, ceramic, glass, or the like) can replace the flex circuit 510.

在一實施例中,介電隔片層514及介電分離器層512包含聚醯亞胺(例如,Kapton,可購自美國DuPont)、PEN或PET層。陰極層513較佳為銅箔。陰極層513及介電分離器層512較佳形成陰極箔與介電質之整合層(其在可購自美國DuPont之Pyralux系列產品中被稱作「非黏著」)。如上文所描述,形成LED封裝318之此等層係捏縮於陰極爪320a-d及321a-b與陽極體315a-b之間。 In one embodiment, dielectric spacer layer 514 and dielectric separator layer 512 comprise a polyimide (eg, Kapton, available from DuPont, USA), a PEN or PET layer. The cathode layer 513 is preferably a copper foil. Cathode layer 513 and dielectric separator layer 512 preferably form an integrated layer of cathode foil and dielectric (which is referred to as "non-adhesive" in the Pyralux series of products available from DuPont, USA). As described above, the layers forming the LED package 318 are pinched between the cathode jaws 320a-d and 321a-b and the anode bodies 315a-b.

一個設計選擇為與對UV LED燈頭模組內之LED分選相對地對個別UV LED燈頭模組進行分選(其在形成串聯陣列時將通常需要連接同一分選等級內之燈)。具有在個別UV LED燈頭模組內分選的能力意謂著吾人不需要對個別燈分選。如上文所述,在於UV LED燈頭模組200內執行分選的一實施例中,使用撓曲電路510(例如,包含電隔離(分段)之陰極層511、介電分離器層512及介電隔片層514)來潛在地個別地定址LED陣列330之每一LED或LED群組,使得可針對Vf、波長、大小、功率等按1至n個群組來對LED分 選,藉此實質上降低對LED製造商以僅一個分選等級或幾個分選等級供應LED的需求。根據一實施例,該等分選等級可為約0.1 Vf或更少;且最佳0.05 Vf或更少或甚至0.01 Vf或更少。取決於特定實施,LED陣列330之LED可在僅一個或兩個大Vf分選等級中,使得該等陣列中的LED之一個或兩個長條帶係來自實質上相同之Vf分選等級。相反,該等分選等級可如0.00001 Vf般嚴格。在此實例中,可減少或甚至消除撓曲電路層510及或LED驅動器PCB 310a-b之分段。此情形當產生極大體積及或大LED晶片且存在可購自製造商的在接近於0.001 Vf或更少之Vf中的大量LED時可實現。 One design option is to sort individual UV LED lamp head modules as opposed to LED sorting within the UV LED lamp head module (which would typically require the connection of lamps within the same sorting level when forming a series array). The ability to sort within individual UV LED lamp head modules means that we do not need to sort individual lamps. As described above, in one embodiment in which sorting is performed within the UV LED lamp head module 200, a flex circuit 510 (eg, a cathode layer 511 comprising electrically isolated (segmented), a dielectric separator layer 512, and Electrical spacer layer 514) to potentially individually address each LED or group of LEDs of LED array 330 such that the LEDs can be divided into 1 to n groups for Vf, wavelength, size, power, etc. This, in turn, substantially reduces the need for LED manufacturers to supply LEDs with only one sorting level or several sorting levels. According to an embodiment, the sorting levels may be about 0.1 Vf or less; and preferably 0.05 Vf or less or even 0.01 Vf or less. Depending on the particular implementation, the LEDs of LED array 330 may be in only one or two large Vf sorting levels such that one or both of the LEDs in the array are from substantially the same Vf sorting level. Instead, the sorting levels can be as strict as 0.00001 Vf. In this example, the segmentation of the flex circuit layer 510 and or the LED driver PCBs 310a-b can be reduced or even eliminated. This situation can be achieved when a very large volume and or large LED wafer is produced and there are a large number of LEDs available from the manufacturer in Vf close to 0.001 Vf or less.

然而,LED驅動器PCB 310a-b及撓曲電路510之分段允許按Vf值分選或根本不分選之眾多選項。在本實例中,藉由將LED陣列330之LED定位於八個撓曲電路段(其中四個在本視圖中可見,亦即,段611a-d)來將該等LED分成八個可個別定址之群組。在一實施例中,藉由光微影圖案化陰極層513及蝕刻掉金屬箔以形成電隔離跡線(例如,電隔離跡線610)來形成段611a-d。藉由雷射加工、佈線或衝壓來移除在LED下方之區域中的介電層512。 However, the segments of LED driver PCBs 310a-b and flex circuit 510 allow for numerous options to be sorted by Vf value or not. In the present example, the LEDs are divided into eight individually addressable locations by positioning the LEDs of the LED array 330 in eight flex circuit segments (four of which are visible in this view, ie, segments 611a-d). Group of. In one embodiment, the segments 611a-d are formed by photolithographic patterning of the cathode layer 513 and etching away the metal foil to form electrically isolated traces (eg, electrically isolated traces 610). The dielectric layer 512 in the area under the LED is removed by laser processing, routing or stamping.

大體上,最適合之UV LED波長係在約360 nm至420 nm之範圍中,且最佳為~395 nm。請注意,波長之混合可用在每一UV LED燈頭模組200中,且較小群組及/或甚至個別LED或其兩者之某組合可藉由線接合至撓曲電路510上之陰極層513(經圖案化之傳導電路材料層)之個別傳導條帶 (圖中未展示)而個別地定址,該傳導條帶(傳導電路材料層)較佳經光微影成像且蝕刻,在其之下具有較佳聚醯亞胺(非導電層,亦稱作介電層)。陰極層513通常為銅。 In general, the most suitable UV LED wavelength is in the range of about 360 nm to 420 nm, and most preferably ~395 nm. Please note that a mixture of wavelengths can be used in each UV LED lamp head module 200, and a smaller group and/or even individual LEDs or some combination of the two can be wire bonded to the cathode layer on the flex circuit 510. Individual conductive strips of 513 (patterned conductive circuit material layer) Individually addressed (not shown), the conductive strip (conductive circuit material layer) is preferably photolithographically imaged and etched, with a preferred polyimine (underlying layer, also referred to as Dielectric layer). Cathode layer 513 is typically copper.

根據一實施例,分離器墊圈314(例如,單片O形環420)裝設於加工或模製至本體305中之凹槽中。如本實例中所描繪,加工至本體305中之凹槽(或密封管)形狀可粗略地描述為具有在轉角中的小半徑及在長軸方向上延伸通過墊圈之中間的部分之「O」形。藉由獨特箔層設計來使此較佳單平面墊圈設計為可能的,在該獨特箔層設計中,微通道冷卻器410之用於冷卻劑的經蝕刻內部通路僅見於實質上位於LED陣列330下的部分中,而未見於實質上在熱散播器周邊區下的區域周圍之部分中。此允許較佳單片微通道冷卻器總成之底部為扁平的且實質上平行於燈體305之配合部分,該配合部分含有用於分離器墊圈314之凹槽。 According to an embodiment, a separator washer 314 (eg, a single piece O-ring 420) is mounted in a groove that is machined or molded into the body 305. As depicted in this example, the shape of the groove (or seal tube) machined into the body 305 can be roughly described as having a small radius in the corner and an "O" extending in the direction of the major axis through the middle of the washer. shape. This preferred single planar gasket design is possible by a unique foil layer design in which the etched internal passage for the coolant of the microchannel cooler 410 is only found substantially in the LED array 330. In the lower portion, it is not found in the portion substantially around the area under the peripheral portion of the heat spreader. This allows the bottom of the preferred monolithic microchannel cooler assembly to be flat and substantially parallel to the mating portion of the lamp body 305, the mating portion containing the recess for the separator washer 314.

上述微通道冷卻器總成之周邊區被最好地解釋為實質上存在於冷卻劑流區域外部的區及/或存在於較佳「O」形橫截面密封件下的區。此設計之益處為避免了具有不同z軸平面之多個密封件或一密封件。本質上,由於較簡單之平坦二維(z軸在一個平面上)密封件將足夠,因此不需要三維(z軸在兩個或兩個以上平面上)組態之密封件。擴散接合之箔層(例如,箔520)在擴散接合之前不僅蝕刻有熱傳遞通路,且在本發明之實施例中亦可蝕刻有主入口/出口微通道(例如,主出口微通道411)。因此,當將組成微通道冷卻器410之箔520(例如,200微米厚)與組成微通道冷卻器410 之通常不具有熱傳遞通路的部分(例如,實心罩蓋層530及經蝕刻之罩蓋層525)的箔接合到一起時,導致一單片微通道冷卻器總成(包括微通道冷卻器410),其具有一扁平底側,該扁平底側用以壓縮存在於較佳單片微通道冷卻器總成與較佳單片燈體305之間的獨特塑形之密封件。 The peripheral regions of the microchannel cooler assembly described above are best interpreted as regions that are substantially present outside of the coolant flow region and/or regions that are present under the preferred "O" shaped cross-sectional seals. The benefit of this design is to avoid multiple seals or a seal with different z-axis planes. Essentially, since a relatively simple flat two-dimensional (z-axis on one plane) seal will suffice, there is no need for a three-dimensional (z-axis on two or more planes) configured seals. The diffusion bonded foil layer (e.g., foil 520) is not only etched with a heat transfer path prior to diffusion bonding, but may also be etched with a main inlet/outlet microchannel (e.g., main exit microchannel 411) in embodiments of the invention. Thus, when the foil 520 (eg, 200 microns thick) that makes up the microchannel cooler 410 is formed with the microchannel cooler 410 When the foils of portions that typically do not have heat transfer paths (eg, solid cap layer 530 and etched cap layer 525) are joined together, result in a single microchannel cooler assembly (including microchannel cooler 410) ) having a flat bottom side for compressing a uniquely shaped seal present between the preferred monolithic microchannel cooler assembly and the preferred monolithic lamp body 305.

不展示一選用的單片擴散接合之熱散播器層(例如,約0.5 mm厚(範圍係0.1 mm至1 mm)),其可橫跨共同陽極基板317之頂面。 An optional monolithic diffusion bonded thermal spreader layer (e.g., about 0.5 mm thick (range 0.1 mm to 1 mm)) is shown that can span the top surface of the common anode substrate 317.

圖7為移除了端蓋的圖2之UV LED燈頭模組200的反射器201之放大等角視圖。此視圖意欲說明反射器201之模組性。在此實例中,展示將反射器201固定至燈體305之四個螺絲715中的兩個。藉由簡單地移除此等螺絲715,可替換上具有不同光學性質之新反射器以代替反射器201。在當前實例中,整體射出模製支座(例如,支座716)可用作小型反射器(下文所論述)或端蓋之對準特徵。若(例如)小型反射器含有磁體(其磁場係相對於螺絲715適當地定向),則鋼螺絲715可用以將此等小型反射器定向、對準及/或固持在適當位置。 7 is an enlarged isometric view of the reflector 201 of the UV LED lamp head module 200 of FIG. 2 with the end cap removed. This view is intended to illustrate the modularity of the reflector 201. In this example, two of the four screws 715 that secure the reflector 201 to the lamp body 305 are shown. Instead of the reflector 201, a new reflector having different optical properties can be replaced by simply removing the screws 715. In the current example, the integral injection molded mount (e.g., mount 716) can be used as a small reflector (discussed below) or an alignment feature of the end cap. If, for example, the small reflector contains magnets whose magnetic field is properly oriented relative to the screw 715, the steel screws 715 can be used to orient, align, and/or hold the small reflectors in place.

此外,可使用自反射器之底部延伸至微通道冷卻器410中或延伸通過微通道冷卻器410以及延伸至燈體中或反之亦然的定位銷或配對之公/母特徵以使反射器201易於相對於LED陣列330對準。此等銷或配對特徵可為射出模製反射器之部分或射出模製(例如,插入模製)燈體之部分。 In addition, a locating pin or mating male/female feature extending from the bottom of the reflector into the microchannel cooler 410 or extending through the microchannel cooler 410 and extending into the lamp body or vice versa can be used to cause the reflector 201 It is easy to align with respect to the LED array 330. Such pin or mating features may be part of an injection molded reflector or part of an injection molded (e.g., insert molded) lamp body.

在一實施例中,定位銷(諸如,銷705)可用以對準小型 反射器或端蓋反射器。螺絲710可用以將端蓋反射器固定至反射器201。 In an embodiment, a locating pin (such as pin 705) can be used to align small Reflector or end cap reflector. A screw 710 can be used to secure the end cap reflector to the reflector 201.

展示了較佳係射出模製的且每一半可為另一半之鏡像的保護性外殼202。 A protective outer casing 202 that is preferably injection molded and each half can be mirrored by the other half is shown.

圖8A概念性地說明根據本發明之實施例的疊置於彼此之上的兩個巨型反射器810a-b及820a-b的橫截面。在此實例中,巨型反射器810a-b及820a-b具有實質上相同之外部高度及寬度,但針對不同工作距離而最佳化。自製造之觀點而言,具有單一深槽巨型反射器長度且接著針對不同焦點而具有不同內部曲線表面為有效率的,因為僅需要單一外部模具且不同之曲線僅為不同之模具嵌入物。 Figure 8A conceptually illustrates a cross section of two giant reflectors 810a-b and 820a-b stacked on top of one another in accordance with an embodiment of the present invention. In this example, the giant reflectors 810a-b and 820a-b have substantially the same outer height and width, but are optimized for different working distances. From a manufacturing point of view, it is efficient to have a single deep grooved giant reflector length and then have different internal curved surfaces for different focal points, since only a single outer mold is needed and the different curves are only different mold inserts.

在本實例中,巨型反射器810a-b係針對53 mm焦平面840而最佳化,且巨型反射器820a-b係針對2 mm焦平面830而最佳化。所展示之每一曲線部分為另一部分之鏡像(假定其具有相同焦距)且表示完整橢圓形、拋物線及/或其兩者之組合的部分。拋物線為橢圓形之特殊情況且通常用於準直光。 In the present example, the giant reflectors 810a-b are optimized for a 53 mm focal plane 840, and the giant reflectors 820a-b are optimized for a 2 mm focal plane 830. Each curved portion shown is a mirror image of another portion (assuming it has the same focal length) and represents a portion of a complete ellipse, parabola, and/or a combination of both. The parabola is a special case of an ellipse and is commonly used to collimate light.

橢圓形具有兩個焦點,主焦點及輔焦點。在當前實例中,主焦點在LED平面870中,且輔焦點在工件平面830或840中。 The ellipse has two focal points, the main focus and the secondary focus. In the current example, the primary focus is in the LED plane 870 and the secondary focus is in the workpiece plane 830 or 840.

在本發明之各種實施例中,邊緣射線811(表示由反射器810a捕獲之第一射線)及由反射器810a捕獲且離開LED陣列的最後射線(圖中未展示)界定大致介於60度至89度之間且較佳80度至85度的角範圍850,藉此舉例說明(使用簡化之 2維分析)53 mm巨型反射器810a-b控制離開LED陣列之光子的約80%以上。實際上,3維電腦分析表明此深槽反射器設計(當端蓋(例如,端蓋207a-b)位於適當位置時)控制離開LED陣列之光子的90%以上。角範圍愈大,對離開LED之光子的控制愈多。因此,可增加角範圍,但需要考慮關於反射器大小(長度及寬度)的實際考慮因素。 In various embodiments of the invention, the edge ray 811 (representing the first ray captured by the reflector 810a) and the last ray (not shown) captured by the reflector 810a and exiting the LED array are defined to be substantially between 60 degrees to An angular range of 850 between 89 degrees and preferably between 80 degrees and 85 degrees, by way of example (simplified use) 2D analysis) The 53 mm giant reflectors 810a-b control more than about 80% of the photons exiting the LED array. In fact, 3-D computer analysis indicates that this deep trench reflector design (when the end caps (e.g., end caps 207a-b) are in place) controls more than 90% of the photons exiting the LED array. The larger the angular range, the more control the photons exiting the LED. Therefore, the angular extent can be increased, but practical considerations regarding reflector size (length and width) need to be considered.

參看圖8B,可看出,根據本發明之實施例,離開LED 850a及850b且反射離開反射器820a的邊緣射線821a-b(分別表示由反射器820a捕獲之第一射線及由反射器820a捕獲之最後射線)界定大致介於65度至89度之間且較佳82度至87度的角範圍860,藉此舉例說明(使用簡化之2維分析)2 mm巨型反射器820a-b控制離開LED陣列之光子的82%以上。實際上,3維電腦分析表明此深槽反射器設計(當端蓋(例如,端蓋207a-b)位於適當位置時)控制離開LED陣列之光子的96%以上。 Referring to Figure 8B, it can be seen that edge rays 821a-b exiting LEDs 850a and 850b and reflecting away from reflector 820a (representing the first rays captured by reflector 820a and captured by reflector 820a, respectively, in accordance with an embodiment of the present invention) The last ray) defines an angular range 860 that is generally between 65 degrees and 89 degrees and preferably between 82 degrees and 87 degrees, thereby exemplifying (using a simplified 2-dimensional analysis) 2 mm giant reflector 820a-b to control the departure More than 82% of the photons of the LED array. In fact, 3-D computer analysis indicates that this deep trench reflector design (when the end caps (e.g., end caps 207a-b) are in place) controls more than 96% of the photons exiting the LED array.

圖9展示根據本發明之實施例的針對2 mm焦平面940最佳化之巨型反射器910的部分,其中反射器之每一側具有一焦點920,該焦點920相對於工件(圖中未展示)上之聚焦射束930(具有約7 mm之總圖案寬度及約0.65 cm之高照射度中心部分)的中心線931偏移。如該圖式中所描繪,在此組態中,自右手側反射器反射之光射線自中心線931之左邊向內朝著中心移動,且自左手側反射器反射之光射線自中心線931之右邊向內朝著中心移動。以此方式,該兩組經反射光射線重疊以產生高照射度射束930。電腦模型化 指示照射度位準比該兩組經反射光射線不重疊之情況下的照射度位準高約10%。顯著地,在一實施例中,在較長焦平面距離(例如,~53 mm)時,在與焦點相距+/- 3 mm之平面處無顯著照射度損失(少於5%)。 9 shows a portion of a giant reflector 910 optimized for a 2 mm focal plane 940, wherein each side of the reflector has a focus 920 relative to the workpiece (not shown), in accordance with an embodiment of the present invention. The center line 931 of the focused beam 930 (having a total pattern width of about 7 mm and a high illumination center portion of about 0.65 cm) is offset. As depicted in this figure, in this configuration, the light rays reflected from the right hand side reflector move inwardly from the left side of the center line 931 toward the center, and the light rays reflected from the left hand side reflector are from the center line 931. The right side moves inward toward the center. In this manner, the two sets of reflected light rays overlap to produce a high illumination beam 930. Computer modeling The indication illuminance level is about 10% higher than the illuminance level in the case where the two sets of reflected light rays do not overlap. Significantly, in one embodiment, at longer focal plane distances (e.g., ~53 mm), there is no significant loss of illumination (less than 5%) at a plane +/- 3 mm from the focus.

圖10為說明針對各種通道寬度的估計之對流熱阻的曲線圖。此圖用圖形描繪了熱阻隨著個別微通道之寬度減小而線性減小。值得注意的係以下事實:本發明之實施例通常使用具有小於0.1 mm且通常0.05 mm、0.025 mm或更小之寬度的通道。在另一實施例中,亦考慮可比0.1 mm直至約0.5 mm寬的微型通道。此與先前技術UV LED燈裝置(諸如,由Phoeseon(USA)及Integration Technology(UK)製造之燈裝置)中所使用之通道的寬度形成對比,該等先前技術UV LED燈裝置咸信使用約0.5 mm或更大之巨型通道。 Figure 10 is a graph illustrating estimated convective thermal resistance for various channel widths. This figure graphically depicts the thermal resistance decreasing linearly as the width of individual microchannels decreases. Of note is the fact that embodiments of the invention typically use channels having a width of less than 0.1 mm and typically 0.05 mm, 0.025 mm or less. In another embodiment, a microchannel that is wider than 0.1 mm up to about 0.5 mm is also contemplated. This contrasts with the width of the channels used in prior art UV LED lamp devices, such as those manufactured by Phoeseon (USA) and Integration Technology (UK), which use about 0.5 for the prior art UV LED lamp devices. Mega channel of mm or larger.

如可自該圖看出,在其他一切相等的情況下,自0.55 mm通道至0.025 mm通道的熱阻的數量級減小自身將導致LED接面溫度的數量級減小。然而,其他一切並不相等。如發明者當前所理解的,先前技術僅具有一個有利於其的熱學相關因素。此因素為使用低亮度、低填充因數(LED裝填密度)陣列,該陣列將熱源分散開且導致低熱密度,從而對於相同接面溫度需要相應較低之熱傳遞係數。 As can be seen from this figure, in all other equal cases, a reduction in the magnitude of the thermal resistance from the 0.55 mm channel to the 0.025 mm channel will itself result in an order of magnitude reduction in the junction temperature of the LED. However, everything else is not equal. As the inventors currently understand, the prior art has only one thermal related factor that is beneficial to it. This factor is the use of an array of low brightness, low fill factor (LED packing density) that spreads the heat source and results in a low heat density, requiring a correspondingly lower heat transfer coefficient for the same junction temperature.

歸因於LED之底面與熱傳遞通路(微通道)之間的最小(通常約125 μm(範圍係5 μm至5,000 μm))厚度,本發明之實施例最小化了經由銅基板的塊體熱阻損失。。 The embodiment of the present invention minimizes bulk heat through the copper substrate due to the minimum (typically about 125 μm (range 5 μm to 5,000 μm)) thickness between the bottom surface of the LED and the heat transfer path (microchannel) Resistance loss. .

圖11為說明各種接面溫度之輸出功率的曲線圖。此圖展 示UV LED效率隨著接面溫度增加而嚴重下降。在接面溫度自攝氏20度增加至攝氏88度時,注意到無效率之40%的下降。UV LED比某些較長波長之藍色及綠色LED對熱敏感得多。因此,需要使用優越之熱管理以便使接面溫度保持為低以達成長壽命且維持合理之效率。 Figure 11 is a graph illustrating the output power of various junction temperatures. This exhibition The UV LED efficiency is severely degraded as the junction temperature increases. A 40% decrease in inefficiency was noted when the junction temperature increased from 20 degrees Celsius to 88 degrees Celsius. UV LEDs are much more sensitive to heat than some longer wavelength blue and green LEDs. Therefore, superior thermal management is required to keep the junction temperature low to achieve long life and maintain reasonable efficiency.

根據本發明之實施例,獲得約攝氏40度至攝氏45度之LED接面溫度,甚至在以超過2.5 A/mm2且有時超過3 A/mm2之電流密度操作時仍如此。此可與Phoseon及Integration Technology之UV LED燈頭形成對比,該等燈頭可能在小於1.5 A/mm2之電流密度下操作,LED間隔得更遠(低填充因數/低裝填密度),此當然導致較低峰值照射度及遞送至工件的較低總能量。 According to an embodiment of the invention, an LED junction temperature of from about 40 degrees Celsius to 45 degrees Celsius is obtained, even when operating at current densities in excess of 2.5 A/mm 2 and sometimes in excess of 3 A/mm 2 . This can be contrasted with Phoseon and Integration Technology's UV LED heads, which may operate at current densities less than 1.5 A/mm 2 with LEDs spaced further apart (low fill factor / low packing density), which of course leads to Low peak illumination and lower total energy delivered to the workpiece.

圖12為說明根據本發明之實施例的具有針對2 mm之焦平面最佳化之反射器的UV LED燈頭之照射度量變曲線的曲線圖。根據本實例,藉由約0.65 cm之輸出射束圖案寬度來達成約84.8 W/cm2之最大(峰值)照射度,且產生跨越輸出射束圖案之寬度的約31.6 W/cm2之平均照射度及每公分輸出射束圖案長度約20.5 W的總輸出功率。此實例係以一電腦模型來產生,該電腦模型假定使用SemiLED之~1.07×1.07 mm LED,其中每一LED在350 mA時產生300 mW輸出。請注意,本發明之實施例可在較高電流(例如,約2.5 A或更多)下使每一LED以約0.75 W至1.25 W運作。 12 is a graph illustrating an illumination metric curve of a UV LED lamp head having a reflector optimized for a focal plane of 2 mm, in accordance with an embodiment of the present invention. According to the present example, a maximum (peak) illumination of about 84.8 W/cm 2 is achieved by an output beam pattern width of about 0.65 cm, and an average illumination of about 31.6 W/cm 2 across the width of the output beam pattern is produced. The total output power is about 20.5 W per degree and output beam pattern length. This example was generated using a computer model that assumes a ~1.07 x 1.07 mm LED using SemiLED, each of which produces a 300 mW output at 350 mA. It is noted that embodiments of the present invention can operate each LED at about 0.75 W to 1.25 W at higher currents (e.g., about 2.5 A or more).

圖13為說明根據本發明之實施例的具有針對53 mm之焦平面最佳化之反射器的UV LED燈頭之照射度量變曲線的 曲線圖。根據本實例,藉由約3.65 cm之輸出射束圖案寬度來達成約24 W/cm2之最大(峰值)照射度,且產生跨越輸出射束圖案之寬度的約5.9 W/cm2之平均照射度及每公分輸出射束圖案長度約21.7 W的總輸出功率。此實例係以一電腦模型來產生,該電腦模型假定使用SemiLED之~1.07×1.07 mm LED,其中每一LED在350 mA時產生300 mW輸出。請注意,本發明之實施例可在較高電流(例如,約2.5 A或更多)下使每一LED以約0.75 W至1.25 W運作。 13 is a graph illustrating an illumination metric curve of a UV LED lamp head having a reflector optimized for a focal plane of 53 mm, in accordance with an embodiment of the present invention. According to the present example, a maximum (peak) illumination of about 24 W/cm 2 is achieved by an output beam pattern width of about 3.65 cm, and an average illumination of about 5.9 W/cm 2 across the width of the output beam pattern is produced. The total output power of the beam and the output beam pattern per cm length is approximately 21.7 W. This example was generated using a computer model that assumes a ~1.07 x 1.07 mm LED using SemiLED, each of which produces a 300 mW output at 350 mA. It is noted that embodiments of the present invention can operate each LED at about 0.75 W to 1.25 W at higher currents (e.g., about 2.5 A or more).

根據一實施例(其中LED驅動器係整合於UV LED燈頭模組內)中,可使用針對高容量「伺服器群」設計之現成AC/DC電源供應器。例示性前端電源可購自Lineage Power USA型號CAR2512FP系列2500 W電源供應器。較佳之電源為Power-One LPS100 12 V 1100 W單風扇伺服器電源,其為高效率之白金級前端AC/DC電源供應器,其具有功率因數校正、可電並聯且具有GUI i2C介面,可透過併有四個此等現成(OTS)單元的子系統來獲得該等Lineage電源供應器。在2011年,此等Lineage單元將為類似的但具有傳導冷卻(無風扇)。 According to an embodiment in which the LED driver is integrated into the UV LED lamp head module, an off-the-shelf AC/DC power supply designed for a high capacity "server cluster" can be used. An exemplary front-end power supply is available from the Lineage Power USA model CAR2512FP series 2500 W power supply. The preferred power supply is the Power-One LPS100 12 V 1100 W single-fan servo power supply, which is a high-efficiency platinum-grade front-end AC/DC power supply with power factor correction, electrical parallel connection and GUI i2C interface. There are four subsystems of these off-the-shelf (OTS) units to obtain these Lineage power supplies. In 2011, these Lineage units will be similar but have conduction cooling (no fans).

根據本發明之實施例,除了冷卻整合式驅動器之外,冷卻劑水亦可有利地用以簡單地藉由使冷卻劑管線延伸通過與需要冷卻之供應器之元件(或基底板)連通之散熱片來冷卻此等電源供應器。由於此等Lineage電源在其最大功率之一百分比時更有效率,因此降低其額定值為最佳的。藉 由非限制性實例,若藉由~15個驅動器在~40安培及~4-5伏特下使每一PCB運作,將使用可用之~10000 W的約60%。最佳針對~50 A或更大及~5.5 V來設計,以在現在及將來需要在每LED~3 A或每群組~48之電流(僅藉由非限制性實例)下操作在所有四側中之每一側上為約~1000平方微米至1200平方微米的較佳~16個LED(但其可為任何大小及形狀,諸如矩形,或較大大小,諸如每側~2000 μm或~4000 μm或更大)時,具有某餘裕空間。在一實施例中,燈體305之背面附近的每一PCB 310a-b上之陰極匯流排條313a-b可幾乎沿較佳~300 mm長之板(圖中未展示)的長度而延伸,以及錫焊墊幾乎沿PCB之長度而延伸。在一實施例中,陰極十字板375表示一跨越陰極匯流排條313a-b固定之連接桿,該連接桿為較佳單一主要陰極線205提供一有效附接點,該較佳單一主要陰極線205較佳以稍類似於較佳單一主要大AWG範圍~1至10且較佳~2 AWG芯陽極線自UV LED燈頭模組200的較佳恆定電流(CC)DC PCB板至較佳連接至交流幹線的電源的方式自UV LED燈頭模組200至AC/DC電源供應器,以將高效率之電源提供給LED,其具有較佳小於10%之低漣波以最大化LED壽命。在PCB上,可存在~15個CC驅動器之前述非限制性實例的一些共用組件,使得將不存在對可能未必陰極隔離的~15個單獨組件的確定性要求。請再次注意,1至n個陰極及陽極電纜可給燈饋入來自1至n個電源供應器或幹線之電力。使用每燈四個Lineage USA 2500W電源供應器且為效率起見使其在降 額功率下運作可為較佳的。可透過用於~4個電源供應器之共同後端而獲得其。在具有或不具有後端之情況下,可考慮每燈四個單獨之陽極及陰極線/電纜以允許使用較小直徑之電纜(美國methode/cableco)及或大電纜及較少之電阻損失。 In accordance with embodiments of the present invention, in addition to cooling the integrated drive, the coolant water may advantageously be used to simply dissipate heat through the coolant line in communication with the components (or substrate plates) of the supply to be cooled. Chips to cool these power supplies. Since these Lineage power supplies are more efficient at a percentage of their maximum power, lowering their rating is optimal. borrow By way of non-limiting example, if each PCB is operated with ~15 amps at ~40 amps and ~4-5 volts, approximately 60% of the available ~10000 W will be used. Best designed for ~50 A or greater and ~5.5 V to operate at ~4 A per LED or ~48 per group (only by way of non-limiting example) in all four now and in the future Preferably, each side of the side is about ~1000 square microns to 1200 square microns of preferred ~16 LEDs (but it can be any size and shape, such as a rectangle, or a larger size, such as ~2000 μm per side or ~ When it is 4000 μm or more, it has a certain margin. In one embodiment, the cathode bus bars 313a-b on each of the PCBs 310a-b near the back side of the lamp body 305 can extend almost along the length of a preferably ~300 mm long plate (not shown). And the solder pads extend almost along the length of the PCB. In one embodiment, the cathode cross plate 375 represents a connecting rod that is fixed across the cathode bus bars 313a-b. The connecting rod provides an effective attachment point for the preferred single main cathode line 205, which is preferably a single main cathode line 205. Preferably, it is similar to a preferred single major large AWG range ~1 to 10 and preferably ~2 AWG core anode wire from the preferred constant current (CC) DC PCB board of the UV LED lamp head module 200 to preferably connected to the AC mains. The power supply is from the UV LED lamp head module 200 to the AC/DC power supply to provide a high efficiency power supply to the LED with a low chopping of preferably less than 10% to maximize LED life. On the PCB, there may be some common components of the aforementioned non-limiting examples of ~15 CC drivers such that there will be no deterministic requirements for ~15 individual components that may not be cathodically isolated. Please note again that 1 to n cathode and anode cables can feed the lamp with power from 1 to n power supplies or mains. Use four Lineage USA 2500W power supplies per lamp and make it drop for efficiency Operating at a power level may be preferred. It can be obtained through the common back end for ~4 power supplies. With or without a back end, four separate anode and cathode wires/cables per lamp can be considered to allow the use of smaller diameter cables (USmethod/cableco) and or larger cables and less resistance losses.

鑒於前述內容,可看出,本發明之實施例係基於緊密間隔之LED陣列(亦稱作高填充因數陣列),使得可獲得最大亮度。亦即,使每單位面積每立體角之光功率最大化,此係因為在當前情形中亮度可粗略地定義為每單位面積每立體角之功率。由於來自電功率至光功率轉換之廢熱隨著陣列密度增加而變得更密集,因此此高亮度亦與熱通量/熱需求幾乎線性相關。本發明之實施例較佳利用填充因數等於或大於90%但具有30%至100%之範圍的LED陣列。根據本發明之實施例,高填充因數陣列之應用導致約1000 W/cm2或更多(範圍係100 W/cm2至10,000 W/cm2)的極高且極密集之熱負載。此高熱通量為高亮度所造成之後果,亦即,LED彼此極其接近(1 μm至1000 μm)、在每平方毫米2安培至3安培或更多(範圍係0.1 A至100 A)之電流下操作,此導致極高之熱通量需求,且當然伴隨著需要極低熱阻冷卻技術,該極低熱阻冷卻技術組合極高程度之冷卻(例如,對流冷卻及/或傳導冷卻(例如,介於LED與流動氣體或液體之間的薄且高傳導性之層))以達成較佳低至攝氏40度或更低的接面溫度,以在極高輸出功率下獲得長壽命與高效的操作。 In view of the foregoing, it can be seen that embodiments of the present invention are based on closely spaced LED arrays (also referred to as high fill factor arrays) such that maximum brightness is achieved. That is, the optical power per solid angle per unit area is maximized because the brightness can be roughly defined as the power per solid angle per solid area in the current situation. Since the waste heat from electrical power to optical power conversion becomes denser as the array density increases, this high brightness is also almost linearly related to the heat flux/heat demand. Embodiments of the present invention preferably utilize LED arrays having a fill factor equal to or greater than 90% but having a range of 30% to 100%. In accordance with embodiments of the present invention, the application of a high fill factor array results in an extremely high and extremely dense thermal load of about 1000 W/cm 2 or more (ranging from 100 W/cm 2 to 10,000 W/cm 2 ). This high heat flux is caused by high brightness, that is, the LEDs are very close to each other (1 μm to 1000 μm), and the current is 2 amps to 3 amps per square millimeter or more (range 0.1 A to 100 A). Lower operation, which results in extremely high heat flux requirements, and of course with the need for extremely low thermal resistance cooling techniques that combine extremely high levels of cooling (eg, convective cooling and/or conduction cooling (eg, , a thin and highly conductive layer between the LED and the flowing gas or liquid)) to achieve a junction temperature as low as 40 degrees Celsius or lower to achieve long life and high efficiency at very high output power Operation.

現參看圖14A至圖14D來描述UV LED燈頭模組1400之替代實施例,其中LED陣列包含串聯LED的多個電並聯連接之群組。圖14A為根據本發明之替代實施例的UV LED燈頭模組1400的等角視圖。圖14B為圖14A之UV LED燈頭模組1400的側視、分解圖,描繪了燈頭模組1400子系統及其各別組件的未裝配之組件。圖14C為圖14A之UV LED燈頭模組的後視、分解等角視圖,描繪了後部連接。圖14D為根據本發明之實施例的撓曲電路子系統1450及冷卻子系統1470的分解圖。 An alternate embodiment of a UV LED lamp head module 1400 is now described with reference to Figures 14A-14D , wherein the LED array includes a plurality of groups of electrically parallel connections of series LEDs. 14A is an isometric view of a UV LED lamp head module 1400 in accordance with an alternate embodiment of the present invention. 14B is a side, exploded view of the UV LED lamp head module 1400 of FIG. 14A depicting the unassembled components of the lamp head module 1400 subsystem and its various components. Figure 14C is a rear, exploded isometric view of the UV LED lamp head module of Figure 14A depicting the rear connection. 14D is an exploded view of flex circuit subsystem 1450 and cooling subsystem 1470, in accordance with an embodiment of the present invention.

在本實例中,燈頭模組1400包括反射器子系統1460、撓曲電路子系統及發光子系統1450,及冷卻子系統1470。此等子系統一起工作以發射意欲用作用於某些材料之固化(例如,光化學固化)機構的UV光,該等材料例如但不限於塗料、塗層、墨水、黏著劑、積層及其類似者。冷卻子系統1470(包括微通道冷卻器1401及燈體1404)意欲冷卻發光元件,例如發光子系統的允許高功率密度光輸出之LED陣列、雷射二極體或其類似者1407。冷卻系統1470亦可包括用於將燈頭模組1400或多個燈頭模組(圖中未展示)安裝至外部裝置(例如,外部框架、支架或軌條)的構件(例如,安裝介面1475)。此軌條提供使燈頭模組整合至製造、印刷或其他製程中之手段。 In the present example, the base module 1400 includes a reflector subsystem 1460, a flex circuit subsystem and a lighting subsystem 1450, and a cooling subsystem 1470. These subsystems work together to emit UV light intended for use as a curing (eg, photochemical curing) mechanism for certain materials such as, but not limited to, coatings, coatings, inks, adhesives, laminates, and the like. By. Cooling subsystem 1470 (including microchannel cooler 1401 and lamp body 1404) is intended to cool a light emitting component, such as an LED array, a laser diode, or a similar one that allows for high power density light output of the lighting subsystem. Cooling system 1470 can also include components (eg, mounting interface 1475) for mounting cap module 1400 or a plurality of cap modules (not shown) to an external device (eg, an outer frame, bracket, or rail). This rail provides the means to integrate the lamp module into manufacturing, printing or other processes.

反射器子系統1460由一對反射器1418、一對反射器端蓋1417、一光學窗1421及一磁性窗座架1424組成。反射器1418可藉由螺絲1427而接合至反射器端蓋1417以形成一內 部反射腔室(圖中未展示),該內部反射腔室用以聚焦由發光子系統發射之光(較佳地,根據非成像物理原理)。該內部反射腔室之內表面(圖中未展示)為高度反射的。根據一實施例,經由對內部表面之拋光與塗佈之組合來達成高反射率。 Reflector subsystem 1460 is comprised of a pair of reflectors 1418, a pair of reflector end caps 1417, an optical window 1421, and a magnetic window mount 1424. The reflector 1418 can be coupled to the reflector end cap 1417 by a screw 1427 to form an inner portion A reflective chamber (not shown) for focusing the light emitted by the illumination subsystem (preferably, according to non-imaging physical principles). The inner surface of the internal reflection chamber (not shown) is highly reflective. According to an embodiment, high reflectivity is achieved via a combination of polishing and coating of the inner surface.

窗1421置放於反射腔室之頂部處且藉由窗座架1422及磁體或螺絲1423之陣列而固定在適當位置。 Window 1421 is placed at the top of the reflective chamber and is held in place by an array of window mounts 1422 and magnets or screws 1423.

反射器子系統1460係藉由插入其與冷卻子系統1470間之撓曲電路子系統1450藉由一系列定位銷30而附接至冷卻子系統1470,且藉由安裝螺絲而固定在適當位置。視情況地,一隔片層(圖中未展示--參見圖16B)可置放於反射器子系統1460正下方以提供調整(例如,z高度調整)及輔助裝配過程。 Reflector subsystem 1460 is attached to cooling subsystem 1470 by a series of locating pins 30 by a flex circuit subsystem 1450 interposed between it and cooling subsystem 1470, and is held in place by mounting screws. Optionally, a spacer layer (not shown - see Figure 16B) can be placed directly below the reflector subsystem 1460 to provide adjustment (e.g., z height adjustment) and an auxiliary assembly process.

一主要出口燈體冷卻流體通道1461/1462及一主要入口燈體冷卻流體通道1461/1462形成於冷卻子系統1470的燈體內。 A primary exit lamp body cooling fluid passage 1461/1462 and a main inlet lamp body cooling fluid passage 1461/1462 are formed in the lamp body of the cooling subsystem 1470.

微通道冷卻器1401隱藏在燈體1404之凹穴1434中。此隱藏式凹穴1434允許撓曲電路1403(其可接合至微通道冷卻器1401之頂部且延伸越過微通道冷卻器1401之一個或多個側面)繞燈體1404之邊緣1435平滑地彎曲。微通道冷卻器1401可如上文參看圖4A至圖4C及圖5A至圖5B所描述般來建構;然而,在本實例之情形中,微通道冷卻器1401無需為導電的。如上所述,滿足本文所描述之冷卻要求的微通道冷卻器可購自加尼福尼亞亨廷頓海灘(Huntington Beach, CA)的Micro-Cooling Concepts。 The microchannel cooler 1401 is hidden in the pocket 1434 of the lamp body 1404. This recessed pocket 1434 allows the flex circuit 1403 (which can be joined to the top of the microchannel cooler 1401 and extends across one or more sides of the microchannel cooler 1401) to smoothly bend around the edge 1435 of the lamp body 1404. The microchannel cooler 1401 can be constructed as described above with reference to Figures 4A-4C and 5A-5B; however, in the case of the present example, the microchannel cooler 1401 need not be electrically conductive. As noted above, microchannel coolers that meet the cooling requirements described herein are available from Huntington Beach, California. CA) Micro-Cooling Concepts.

如下文更詳細地描述,在一實施例中,撓曲電路1403為較佳含有極性相反之兩個導體的多導體撓曲電路。撓曲電路1403具有高縱橫比,該高縱橫比涉及其沿著LED陣列1401之長軸的長度對LED陣列/基台組合的高度。此允許在緊密之Z高度厚度層疊中大量電流流至LED陣列1407。LED/基台之層疊與撓曲電路堆疊(如圖16B中所說明)及選用之自由浮動未附接隔片層幾乎相同,該選用之自由浮動未附接隔片層構成了任何z高度差或有意增加z高度差且為反射器子系統1460之底部建立了基底。 As described in more detail below, in one embodiment, flex circuit 1403 is a multi-conductor flex circuit that preferably includes two conductors of opposite polarity. The flex circuit 1403 has a high aspect ratio that relates to its height along the long axis of the LED array 1401 versus the LED array/base combination. This allows a large amount of current to flow to the LED array 1407 in a tight Z height thickness stack. The LED/stack stack is almost identical to the flex circuit stack (as illustrated in Figure 16B) and the optional free floating unattached spacer layer, which is a free floating unattached spacer layer that constitutes any z-height difference Or intentionally increasing the z height difference and establishing a base for the bottom of the reflector subsystem 1460.

在所描繪之實例中,撓曲電路1403中之一細長開口1440(例如,空隙、窗、間隙、孔或孔隙)起到以下雙重用途:使陽極及陰極接合墊接近於具有低厚度(高度)之LED及基台1406,且亦可在將基台1406錫焊至適當位置中時充當機械導引。美國Indium Corp.of America提供了上述兩種用途,助熔劑(例如,WS-3622)及含銦之預成型坯可具有約3%之銀以便獲得較好之潤濕及預成型坯剛性。細長開口1440可為矩形或任何其他幾何形狀。 In the depicted example, one of the elongated openings 1440 (eg, voids, windows, gaps, holes, or apertures) in the flex circuit 1403 serves the dual purpose of bringing the anode and cathode bond pads close to having a low thickness (height) The LED and the base 1406 can also serve as a mechanical guide when the base 1406 is soldered into place. Indium Corp. of America, USA, provides both of the above uses. Flux (e.g., WS-3622) and indium containing preforms can have about 3% silver for better wetting and preform rigidity. The elongated opening 1440 can be rectangular or any other geometric shape.

在所描繪之實施例中,撓曲電路1403基本上形成於邊緣1435上,且電流在撓曲電路1403中的流動基本上自實質上平行於LED陣列1407之p-n接面平面之平面重定向至實質上垂直於該p-n接面平面之方向。撓曲電路1403裝設於反射器子系統1460下且進一步藉由蓋1415固持在適當位置。齊納二極體(例如,可購自美國Littel Fuse,Inc.之齊納二極體 1402)如圖所示在形成於撓曲電路1403內之凹穴(例如,凹穴1436)中,且錫焊至適當位置且根據習知表面安裝技術(SMT)製造技術藉由電鍍通孔而連接至撓曲電路1403之陰極層。如上所述,燈體1404可經機械加工或射出模製或某組合。 In the depicted embodiment, the flex circuit 1403 is formed substantially on the edge 1435, and the flow of current in the flex circuit 1403 is substantially redirected from a plane substantially parallel to the plane of the pn junction of the LED array 1407. It is substantially perpendicular to the direction of the plane of the pn junction. The flex circuit 1403 is mounted under the reflector subsystem 1460 and is further held in place by the cover 1415. Zener diodes (eg, Zener diodes available from Littel Fuse, Inc., USA) 1402) as shown in a recess (eg, pocket 1436) formed in flex circuit 1403, and soldered to a suitable location and plated through via according to conventional surface mount technology (SMT) fabrication techniques Connected to the cathode layer of flex circuit 1403. As noted above, the lamp body 1404 can be machined or injection molded or some combination.

撓曲電路子系統1450藉由小五金1426連接至冷卻子系統1470。根據一實施例,藉由使用可購自紐約Apple Rubber Products of Lancaster的具有定製形狀之O型環1405,在微通道冷卻器1401與燈頭模組1400之燈體1404之間形成不透流體之密封。銷1428將反射器子系統1460定位至冷卻器子系統1470。 The flex circuit subsystem 1450 is coupled to the cooling subsystem 1470 by a hardware 1426. According to an embodiment, a fluid tight barrier is formed between the microchannel cooler 1401 and the lamp body 1404 of the base module 1400 by using a custom shaped O-ring 1405 available from Apple Rubber Products of Lancaster, New York. seal. Pin 1428 positions reflector subsystem 1460 to cooler subsystem 1470.

在本實例中,燈體1404提供用於進入及返回之流體冷卻路徑以及用以將所有子系統配合及固定在一起的機械結構。冷卻流體自輸入管1420進入燈體1404,輸入管1420係藉由入口管夾1432及其關聯小五金1431而連接至燈體1404。流體自流體之入口室流動經過微通道冷卻器1401,在微通道冷卻器1401處,流體因LED陣列1407產生之廢熱而在熱學上變溫。此變溫之流體接著行進通過排出室(通常具有相同之幾何形狀)而至一出口室,在該出口室處,流體接著經由輸出管而返回至冷卻構件(圖中未展示)(例如,冷凍器、熱交換器或其類似者)。輸出管可以與入口側非常相同之方式固定至燈體1404,但使用不同地組態(例如,楔住的)之夾1416。 In the present example, the lamp body 1404 provides a fluid cooling path for entry and return and a mechanical structure for mating and securing all of the subsystems together. The cooling fluid enters the lamp body 1404 from the input tube 1420. The input tube 1420 is coupled to the lamp body 1404 by the inlet tube clamp 1432 and its associated hardware 1431. Fluid flows from the fluid inlet chamber through the microchannel cooler 1401 where it is thermally warmed by the waste heat generated by the LED array 1407. The temperature-changing fluid then travels through the discharge chamber (typically having the same geometry) to an outlet chamber where the fluid is then returned to the cooling member (not shown) via the output tube (eg, a freezer) , heat exchanger or the like). The output tube can be secured to the lamp body 1404 in much the same way as the inlet side, but with a differently configured (eg, wedged) clip 1416.

蓋1415藉由小五金1424而安裝至燈體1404。蓋1415覆蓋 且保護撓曲電路子系統1450之撓曲電路1403及接線器。蓋1415亦保持撓曲電路1403之形狀。 The cover 1415 is attached to the lamp body 1404 by a hardware 1424. Cover 1415 covered And the flex circuit 1403 and the connector of the flex circuit subsystem 1450 are protected. Cover 1415 also maintains the shape of flex circuit 1403.

在一實施例中,燈體1404具有一體式突起(例如,入口夾1432),入口軟管1420套到該突起上。可為出口軟管提供類似連接性。較佳地,使用捕獲式及/或楔住的經機械加工之軟管夾(例如,1432)。楔住位置防止軟管夾不想要之旋轉,而捕獲式特徵使安裝軟管不如此麻煩。軟管夾可較佳地具有「t」形狹槽,該等狹槽可在較佳地相隔120度之情況下進行電火花線加工(EDM)以實現更均一之軟管夾緊動作。 In one embodiment, the lamp body 1404 has an integral protrusion (eg, inlet clip 1432) onto which the inlet hose 1420 fits. A similar connection can be provided for the outlet hose. Preferably, a captured and/or wedged machined hose clamp (e.g., 1432) is used. The wedged position prevents unwanted rotation of the hose clamp, while the capture feature makes the installation hose less troublesome. The hose clamps preferably have "t" shaped slots that can be electrically wire wound (EDM), preferably 120 degrees apart, to achieve a more uniform hose clamping action.

陰極電極1413及陽極電極1412展示於圖14D中。此等電極將撓曲電路1403夾緊或夾在其自身與燈體1404之間。在每一電極下存在撓曲電路陽極層或撓曲電路陰極層之暴露區域,以便實現各別電極與撓曲電路表面之間的電接觸及連續性。 Cathode electrode 1413 and anode electrode 1412 are shown in Figure 14D. These electrodes clamp or clamp the flex circuit 1403 between itself and the lamp body 1404. There is an exposed area of the flex circuit anode layer or the flex circuit cathode layer under each electrode to achieve electrical contact and continuity between the respective electrodes and the flex circuit surface.

在本實例之情形中,撓曲電路子系統1450較佳地包括LED 1407之高密度陣列、一多層、多導體之可撓電路1403、一微通道冷卻器1401、一靜電放電(ESD)防護裝置1402、一電源供應器電纜1421,及一電力返回電纜1422。該等電纜與其各別電極(例如,安裝塊體)1412及1413附接。此等安裝塊體將每一電纜連接至其在撓曲電路1403中之各別導體層。此使電力能夠自遠端電源(圖中未展示)經由電力電纜1419及1420行進至燈頭模組1400且經由撓曲電路1403而至LED陣列1407。 In the case of the present example, flex circuit subsystem 1450 preferably includes a high density array of LEDs 1407, a multi-layer, multi-conductor flexible circuit 1403, a microchannel cooler 1401, and an electrostatic discharge (ESD) protection. Device 1402, a power supply cable 1421, and a power return cable 1422. The cables are attached to their respective electrodes (e.g., mounting blocks) 1412 and 1413. These mounting blocks connect each cable to its respective conductor layer in the flex circuit 1403. This enables power to travel from the remote power source (not shown) to the base module 1400 via the power cables 1419 and 1420 and to the LED array 1407 via the flex circuit 1403.

根據一實施例且如下文更詳細地描述,LED陣列1407由並聯地置放之串聯LED陣列之多個(例如,三個)較小陣列組成,該多個較小陣列(每一陣列為一「群組」)中之每一者包括多個(例如,十二個)LED。在一實施例中,此等較小陣列係藉由將該等LED錫焊且線接合至基台1406建構而成。 According to an embodiment and as described in more detail below, LED array 1407 is comprised of a plurality (eg, three) of smaller arrays of series LED arrays placed in parallel, each of the plurality of arrays (one for each array) Each of the "groups" includes a plurality of (eg, twelve) LEDs. In one embodiment, the smaller arrays are constructed by soldering and wire bonding the LEDs to the submount 1406.

LED係在長方向上沿基台1406排列以形成LED陣列1407。第一個LED之最末邊緣之後接著係下一個LED之開始邊緣,等等(例如,邊緣對邊緣地置放)。在一實施例中,在任兩個LED之間不存在介入之金屬化及/或接合墊或電路跡線材料。此允許LED彼此儘可能緊密地置放,藉此藉由最小化LED之間的死空間而最大化在LED陣列1407之長方向上的發光區域。若在LED之間存在細長接合墊、線接合墊區域,及/或電路跡線金屬化,則LED將必須置放成相隔較遠,此將危及到沿LED陣列1407之長方向的發光區域。在一實施例中,以最小面積(長度×寬度)最大化發光表面為所要的。此外,高縱橫比(長度長於寬度)亦由細長反射器半部/蛤殼用來在工件上按一圖案來控制所發射之光子,該圖案較佳地具有與發射區域相同之幾何形狀,目的係為了消除散落在邊緣周圍(亦稱作模糊)之光子。 The LEDs are arranged along the base 1406 in the long direction to form an LED array 1407. The last edge of the first LED is followed by the beginning edge of the next LED, and so on (eg, edge to edge placement). In an embodiment, there is no intervening metallization and/or bond pad or circuit trace material between any two LEDs. This allows the LEDs to be placed as close as possible to each other, thereby maximizing the illumination area in the long direction of the LED array 1407 by minimizing the dead space between the LEDs. If there are elongated bond pads, wire bond pad areas between the LEDs, and/or circuit trace metallization, the LEDs will have to be placed far apart, which would jeopardize the light-emitting area along the long direction of the LED array 1407. In an embodiment, it is desirable to maximize the illuminating surface with a minimum area (length x width). In addition, the high aspect ratio (length longer than the width) is also used by the elongated reflector half/clamshell to control the emitted photons in a pattern on the workpiece, preferably having the same geometry as the emission area, In order to eliminate photons scattered around the edges (also known as blurring).

在各種實施例中且如下文更詳細地描述,對於LED陣列1407中之每一群組,可存在三個不同之線接合連接。舉例而言,線接合連接(例如,線接合1708)可在撓曲電路1403之正電力路徑層(亦稱作電源或陽極)與一群組中之第一個 LED之陽極墊之間形成。一第二線接合類型(例如,線接合1709)係自一群組中之每一LED發生(該群組中之最後一個LED除外),該第二線接合類型將LED陰極墊接合至基台1406上之一支柱,該支柱將LED陰極墊電連接至該群組中之下一個LED的陽極。最後一個LED之陰極墊藉由第三種類型之線接合(圖中未展示--參見圖16C之線接合1710)而連接至撓曲電路1403之陰極或返回層。線接合1708、1709及1710更詳細地展示於圖16C及圖17D至圖17F中。 In various embodiments and as described in more detail below, there may be three different wire bond connections for each of the LED arrays 1407. For example, a wire bond connection (eg, wire bond 1708) can be at the positive power path layer (also referred to as a power supply or anode) of flex circuit 1403 and the first of a group Formed between the anode pads of the LED. A second wire bond type (eg, wire bond 1709) occurs from each LED in a group (except for the last LED in the group) that joins the LED cathode pad to the abutment A post on 1406 that electrically connects the LED cathode pad to the anode of the next LED in the group. The cathode pad of the last LED is connected to the cathode or return layer of flex circuit 1403 by a third type of wire bond (not shown - see wire bond 1710 of Figure 16C). Wire bonds 1708, 1709, and 1710 are shown in more detail in Figures 16C and 17D through 17F.

根據一實施例,串聯LED之多個群組邊緣對邊緣地排成一行以產生高密度之陣列。在一實施例中,在電力上,LED陣列1407為各自含有串聯接線之多個(例如,十二個)LED的多個(例如,三個)並聯路徑的陣列。 According to an embodiment, a plurality of group edges of the series LEDs are aligned in a row to produce a high density array. In one embodiment, LED array 1407 is an array of multiple (eg, three) parallel paths each containing a plurality (eg, twelve) of LEDs connected in series.

根據一實施例,基台1406使用一薄焊料預成型坯1410(約20微米或更小)而接合至微通道冷卻器1401,以最小化LED與流經微通道冷卻器1401之冷卻流體之間的熱阻。 According to an embodiment, the submount 1406 is bonded to the microchannel cooler 1401 using a thin solder preform 1410 (about 20 microns or less) to minimize the interaction between the LED and the cooling fluid flowing through the microchannel cooler 1401. Thermal resistance.

根據一實施例,LED陣列1407包含12個電串聯接線之80密耳×80密耳LED的3個群組,該等LED可購自臺灣SemiLEDs。該三個群組為電並聯接線的。取決於特定實施方案,可使用更多或更少之並聯群組,且串聯LED群組中之每一者亦可包含多於或少於12個之串聯LED。LED陣列1407之個別LED可為大晶片變體,其每條邊約2019 μm(80密耳)且其為145 μm厚。在一實施例中,UV發光薄膜材料(例如,GaN)可沈積在可購自加尼福尼亞聖巴巴拉(Santa Barbara,CA)之Inlustra Technologies,Inc.的同質GaN基板 上。此將實現極端電流密度,例如,3+安培/每平方毫米之LED晶片區域,其中很少有或無電流下降,電流下降常見於沈積在異質基板(例如,藍寶石、SiC)上之GaN薄膜裝置中。極端電流密度之其他實現理由為GaN與GaN之間幾近完美之晶格匹配及GaN之高導熱性。此類極端電流密度產生極端熱通量,該等極端熱通量藉由使用微通道冷卻器來最好地進行管理及/或加以改善,如本文所述之各種實施例的情形中所描述。 According to an embodiment, the LED array 1407 comprises three groups of 12 electrically spliced 80 mil x 80 mil LEDs available from Taiwan SemiLEDs. The three groups are electrically connected in parallel. Depending on the particular implementation, more or fewer parallel groups may be used, and each of the series LED groups may also include more or less than 12 series LEDs. The individual LEDs of LED array 1407 can be large wafer variants having about 2019 μm (80 mils) per side and 145 μm thick. In one embodiment, a UV luminescent thin film material (eg, GaN) can be deposited on a homogeneous GaN substrate available from Inlustra Technologies, Inc. of Santa Barbara, CA. on. This will achieve extreme current densities, for example, 3+ amps per square millimeter of LED wafer area with little or no current drop, current drop common in GaN thin film devices deposited on heterogeneous substrates (eg, sapphire, SiC) in. Other reasons for achieving extreme current densities are near-perfect lattice matching between GaN and GaN and high thermal conductivity of GaN. Such extreme current densities produce extreme heat fluxes that are best managed and/or improved by the use of microchannel coolers, as described in the context of various embodiments described herein.

根據一實施例,LED陣列1407之長度對寬度之縱橫比較佳為1:36,但範圍可為1:5至1:1,000。 According to an embodiment, the length to width of the LED array 1407 is preferably 1:36, but may range from 1:5 to 1:1,000.

較佳為12個之串聯LED(範圍可為1至100)展示在每一基台(例如,基台1406)上。可對並聯LED群組進行分選,使得每一群組皆具有大致相同之阻抗以減少有害之電流擾亂效應。負載平衡電阻器為用於完成阻抗匹配以(再次降低電流擾亂群組之機會)的又一種手段,但預先分選可能更加上乘及節省成本。購自德州普萊諾(Plano,Texas)之GE/Lineage,CP200的現成電源供應器為用於對本實施例之UV LED燈供電的更可取之AC-DC電源供應器(亦稱作整流器)。該電源供應器目前可用作效率為~97%的2000 W或2700 W單元。電源供應器亦具有極緊密之形狀因子且具有極少見之大輸出電壓擺動。此大輸出電壓擺動允許12個LED之3個群組藉由僅使用0-5 V之輸入控制自約3 A/mm2之LED電流密度的100%全功率變化下至可能為0-75%之全功率的位準。因此,不需要笨重、昂貴及效率低下之DC-DC 轉換器,且可依賴於可購自GE的緊密、使用壽命長(2 M Hr.MTBF)之電源供應器(整流器)的全效率。 Preferably, twelve series LEDs (ranging from 1 to 100) are shown on each of the base stations (e.g., base station 1406). The parallel LED groups can be sorted such that each group has approximately the same impedance to reduce unwanted current disturbance effects. Load balancing resistors are yet another means for accomplishing impedance matching (again reducing the chance of current disrupting the group), but pre-sorting may be more cost effective and cost effective. An off-the-shelf power supply from GE/Lineage, CP200, from Plano, Texas, is a preferred AC-DC power supply (also known as a rectifier) for powering the UV LED lamp of this embodiment. The power supply is currently available as a 2000 W or 2700 W unit with an efficiency of ~97%. The power supply also has a very tight form factor and has a very small output voltage swing that is rare. This large output voltage swing allows 3 groups of 12 LEDs to control from 100% full power variation of approximately 3 A/mm 2 of LED current density to 0-75% by using only 0-5 V input. The level of full power. Therefore, there is no need for a cumbersome, expensive, and inefficient DC-DC converter, and it can rely on the full efficiency of a tight, long-life (2 M Hr. MTBF) power supply (rectifier) available from GE.

現參看圖15A至圖15D描述基台1406。圖15A為根據本發明之實施例的基台1406的俯視圖。圖15B為圖15A之基台的等角視圖,展示了基台1406之頂面的凸起之高電流載運電沈積特徵。圖15C為圖15A之基台1406之邊視圖,其說明了根據本發明之實施例的基台1406之各個層。圖15D為圖15A之區段D的放大圖,說明了用於一串聯LED陣列之一群組中之兩個中間LED的接合墊1511及1512的獨特互鎖幾何組態。為準確及清楚起見,展示了焊料障壁1530,但其為最頂層且電流在其下流過。雖然為簡潔起見下文可能僅描述了單個基台,但應理解,根據本發明之實施例,可將多個基台(例如,3個)電並聯連接。 The base 1406 is now described with reference to Figures 15A-15D. Figure 15A is a top plan view of a submount 1406 in accordance with an embodiment of the present invention. Figure 15B is an isometric view of the base of Figure 15A showing the raised high current carrying electrodeposition characteristics of the top surface of the base 1406. Figure 15C is a side elevational view of the base 1406 of Figure 15A illustrating various layers of the base 1406 in accordance with an embodiment of the present invention. Figure 15D is an enlarged view of section D of Figure 15A illustrating the unique interlocking geometry configuration of bond pads 1511 and 1512 for two intermediate LEDs in a group of one series LED array. For accuracy and clarity, the solder barrier 1530 is shown, but it is the topmost layer and current flows thereunder. Although only a single base may be described below for the sake of brevity, it should be understood that a plurality of base stations (e.g., three) may be electrically connected in parallel in accordance with an embodiment of the present invention.

根據一實施例,基台1406具有兩個主要功能:(i)提供一種手段用於將一串聯群組內之一LED電連接至該串聯群組內之下一個LED及在每一群組之開頭及結尾處電連接至撓曲電路1403(撓曲電路1403連接更詳細地展示於圖17F中);及(ii)為該等LED提供一空間上精確之幾何安裝,用於對該等LED定位且將其形成為高縱橫比之線性陣列。 According to an embodiment, the base station 1406 has two main functions: (i) providing a means for electrically connecting one of the LEDs in a series group to the next LED in the series group and in each group The beginning and the end are electrically connected to the flex circuit 1403 (the flex circuit 1403 connections are shown in more detail in Figure 17F); and (ii) provide a spatially accurate geometric mounting for the LEDs for the LEDs Position and form it into a linear array of high aspect ratios.

LED陣列1407中之LED錫焊至基台1406之接合墊部分(例如,接合墊部分1511)上約5微吋之金層。熟習此項技術者將認識到將LED固定至接合墊之各種其他方式係可能的。舉例而言,可使用擴散接合之環氧樹脂來固定LED。 The LEDs in the LED array 1407 are soldered to a gold layer of about 5 micro turns on the bond pad portion (e.g., bond pad portion 1511) of the submount 1406. Those skilled in the art will recognize that various other ways of securing the LED to the bond pad are possible. For example, a diffusion bonded epoxy can be used to secure the LED.

根據一實施例,所使用之焊料為沈積在LED之底面上的 SnCu。或者,可使用可購自Indium Corp.of America之糊狀物,其可使用助熔劑載體(例如,WS-3622)以附接LED。在又一實施例中,可使用焊料預成型坯。 According to an embodiment, the solder used is deposited on the underside of the LED SnCu. Alternatively, a paste available from Indium Corp. of America can be used, which can be used to attach LEDs using a flux carrier (eg, WS-3622). In yet another embodiment, a solder preform can be used.

返回至本實例,在薄的金下接合墊區域1511之下(且如下文參看圖15C進一步描述)存在Ni擴散障壁及Ti黏著層。最後,存在形成一互鎖之L形結構(例如,1510及1520)之厚(例如,1密耳至2密耳)之銅電流傳導層,該L形結構之一厚「臂」部分(例如,1511及1521)完全在LED之經錫焊部分下方延伸且在四周延伸以形成一電路跡線(例如,1513及1523)及一線接合墊區域(例如,1512及1522),該電路跡線與該線接合墊區域一起表示其各別L形結構1510及1520之「支柱」。在一實施例中,基台1406包括多個交替之定向相反的L形結構。可按一互鎖配置在基台上圖案化L形經圖案化電路材料層,在該互鎖配置中,該複數個L形經圖案化電路材料層中之鄰近L形經圖案化電路材料層的支柱部分位於陣列之對置側上且實質上彼此平行地延伸。 Returning to this example, there is a Ni diffusion barrier and a Ti adhesion layer under the thin gold under bond pad region 1511 (and as further described below with reference to Figure 15C). Finally, there is a copper current conducting layer that forms an interlocking L-shaped structure (eg, 1510 and 1520) thick (eg, 1 mil to 2 mils), one of the L-shaped structures having a thick "arm" portion (eg, , 1511 and 1521) extend completely under the soldered portion of the LED and extend around to form a circuit trace (eg, 1513 and 1523) and a line bond pad region (eg, 1512 and 1522), the circuit trace and The wire bond pad regions together represent the "pillars" of their respective L-shaped structures 1510 and 1520. In an embodiment, the base 1406 includes a plurality of alternating L-shaped structures that are oppositely oriented. The L-shaped patterned circuit material layer can be patterned on the submount in an interlocking configuration, wherein the interlocking L-shaped patterned circuit material layer of the plurality of L-shaped patterned circuit material layers The struts are located on opposite sides of the array and extend substantially parallel to each other.

由於L形銅電流傳導層1510之支柱部分1512用作線接合區域,以便形成可靠之線接合,因此希望具有較厚之125微吋之金。此外,希望避免焊料蔓延或流動至接合墊區域(例如,1511及1521)上。因此,在一實施例中,在細長部分之開頭自接合墊1511之直角邊緣開始且朝打線墊跡線區延伸約2密耳,來實施焊料堤或焊料障壁(例如,焊料障壁1530)。此焊料堤較佳為TiW,其係在基台被切成個別晶片之前經由遮罩濺鍍至晶圓上。此焊料堤起作用係因為TiW 在空氣中易於氧化且焊料將不會在氧化表面上流動。 Since the pillar portion 1512 of the L-shaped copper current conducting layer 1510 serves as a wire bonding region to form a reliable wire bond, it is desirable to have a thicker 125 micron gold. In addition, it is desirable to avoid solder spreading or flow to the bond pad regions (eg, 1511 and 1521). Thus, in one embodiment, a solder bank or solder barrier (e.g., solder barrier 1530) is implemented at the beginning of the elongated portion starting from the right angle edge of bond pad 1511 and extending about 2 mils toward the wire pad trace region. The solder bank is preferably TiW which is sputtered onto the wafer via a mask before the substrate is cut into individual wafers. This solder levee works because of TiW It is easily oxidized in the air and the solder will not flow on the oxidized surface.

雖然接合墊(例如,1511)、電路跡線(例如,1513)及線接合墊區域(例如,1512)皆基本上共用了同一個單片導電電流載運層,該電流載運層基本上具有由「L」描述之相同幾何形狀,但接合墊區域仍可被視為係細長的,因為其延伸超過了實質上在LED之下的區域。此細長形狀正交於LED陣列1407之長軸以及自身邊緣對邊緣地排列成一細長圖案的基台之陣列。 Although the bond pads (eg, 1511), circuit traces (eg, 1513), and wire bond pad regions (eg, 1512) all share substantially the same monolithic conductive current carrying layer, the current carrying layer essentially has L" describes the same geometry, but the bond pad area can still be considered to be elongated because it extends beyond the area substantially below the LED. The elongated shape is orthogonal to the long axis of the LED array 1407 and an array of abutments whose edges are edge-arranged into an elongated pattern.

電路跡線(例如,1513)沿LED陣列1407之長軸而為細長的,因為其不僅橫過該陣列中之每一LED的最末邊與開始邊之間的間隙,且亦橫過最末邊與開始邊之間的距離,藉此其長於一LED邊。該電路跡線之此細長部分為「L」形狀之長的薄「支柱」。包括LED邊緣之間的距離加上一LED邊緣自身之長度的個別電路跡線(例如,電路跡線1513)的長度較佳具有8:1之近似比率,範圍係4:1至16:1。較佳地,電路跡線之厚度(包括所有層,無論是黏著層、電流載運層,還是保護層)較佳為50微米(2密耳厚),範圍係約10微米至100微米,且寬度較佳至少250微米(10密耳)寬,範圍係50微米至500微米。在一實施例中,橫截面為約5:1,但範圍可自2:1至20:1。 The circuit trace (e.g., 1513) is elongated along the long axis of the LED array 1407 because it not only traverses the gap between the leading edge and the starting edge of each LED in the array, but also crosses the last The distance between the edge and the starting edge, whereby it is longer than an LED edge. The elongated portion of the circuit trace is a thin "pillar" having a long "L" shape. The length of the individual circuit traces (e.g., circuit traces 1513) including the distance between the edges of the LEDs plus the length of one of the LED edges themselves preferably has an approximate ratio of 8:1, ranging from 4:1 to 16:1. Preferably, the thickness of the circuit trace (including all layers, whether adhesive, current carrying, or protective) is preferably 50 microns (2 mils thick), ranging from about 10 microns to 100 microns, and width. It is preferably at least 250 microns (10 mils) wide and ranges from 50 microns to 500 microns. In one embodiment, the cross section is about 5:1, but the range can be from 2:1 to 20:1.

由於本發明之實施例涉及高電流通量裝置,因此通常使用導電性足夠之材料(例如,銅)來載運電流,而不具有過度之電阻損失。在習知之串聯電路佈局中,自一個LED至下一個LED之電流通常經由多根小導線來載運,該等小導 線習知上係接合至一個LED之頂面且接著接合至下一個LED的延伸(或細長)之接合墊,其中該接合墊與此下一個晶粒之底面電連通。如先前所述,此類型之習知串聯電路佈局可能會佔用沿細長陣列之長度的非所要之量的區域,該區域不發射光子(例如,非發光區域),因此,在一實施例中,代替使用導線來在LED之間載運電流,使用平行於LED陣列1407之外側邊緣(例如,參見圖18C之1801)的電路跡線。 Since embodiments of the present invention are directed to high current flux devices, materials of sufficient conductivity (e.g., copper) are typically used to carry current without excessive resistance loss. In a conventional series circuit arrangement, the current from one LED to the next is typically carried via a plurality of small conductors. The wire is conventionally bonded to the top surface of one LED and then bonded to the extended (or elongated) bond pad of the next LED, wherein the bond pad is in electrical communication with the bottom surface of the next die. As previously described, this type of conventional series circuit layout may occupy an undesirable amount of area along the length of the elongated array that does not emit photons (e.g., non-illuminated areas), thus, in one embodiment, Instead of using wires to carry current between the LEDs, a circuit trace parallel to the outer edge of the LED array 1407 (see, for example, 1801 of Figure 18C) is used.

根據一實施例,基台1406由一基板材料(例如,氧化鈹(BeO))組成。在一實施例中,此層在合理時保持為儘可能地薄,以便最小化熱阻同時仍維持可製造性。在本實例中,BeO晶圓之底面可由以下三個層組成:(i)鈦黏著層1506b、用以防止金蓋板1502b之吸收及擴散之鎳障壁1504b,金蓋板1502b用以提供可接合表面。此等層允許焊料接合至金層且接合至微通道冷卻器1401。 According to an embodiment, the base 1406 is comprised of a substrate material (eg, beryllium oxide (BeO)). In an embodiment, this layer is kept as thin as possible in order to minimize thermal resistance while still maintaining manufacturability. In this example, the bottom surface of the BeO wafer can be composed of three layers: (i) a titanium adhesive layer 1506b, a nickel barrier 1504b for preventing absorption and diffusion of the gold cover 1502b, and a gold cover 1502b for providing bondability. surface. These layers allow solder to bond to the gold layer and bond to the microchannel cooler 1401.

晶圓之頂面具有銅層1505置頂之另一隔離障壁。銅層1505運作之方式與在傳統印刷電路板上之銅蝕刻非常相同,從而提供電跡線及形成可安裝組件之墊。在一實施例中,選擇銅層1505之厚度以最大化導熱性且最小化電阻同時維持合理之製造成本。銅層1505之頂面塗佈有鎳障壁1504a以防止上述金塗層之擴散。在塗覆焊料1699之區域及SMT組件(在此情況下,為LED之陽極墊)中,可施加一薄的金蓋板1502a。在線接合將被連接之區域中,可施加一較厚之金墊1501。在不希望有焊料之區域中,存在由 TiW組成之絕緣或焊料擋止層1503。在一實施例中,焊料擋止層1503用作「焊料堤」。焊料擋止層1503亦有助於確保LED仍在接合墊上居中且在錫焊工藝期間不浮動,同時經由下方之銅層1505來維持與其他墊之電連續性。以此方式,可形成所有頂層以產生多個(例如,12個)電隔離之區段,該群組中之每一LED一個區段。 The top surface of the wafer has another isolation barrier that is topped by a copper layer 1505. The copper layer 1505 operates in much the same way as a copper etch on a conventional printed circuit board to provide electrical traces and pads that form mountable components. In one embodiment, the thickness of the copper layer 1505 is selected to maximize thermal conductivity and minimize electrical resistance while maintaining reasonable manufacturing costs. The top surface of the copper layer 1505 is coated with a nickel barrier 1504a to prevent diffusion of the gold coating described above. In the area where the solder 1699 is applied and the SMT component (in this case, the anode pad of the LED), a thin gold cover 1502a can be applied. A thicker gold pad 1501 can be applied to the area where the wire bonds will be joined. In areas where solder is not desired, there is An insulating or solder stop layer 1503 composed of TiW. In one embodiment, the solder stop layer 1503 serves as a "solder bank." The solder stop layer 1503 also helps to ensure that the LEDs are still centered on the bond pads and do not float during the soldering process while maintaining electrical continuity with the other pads via the underlying copper layer 1505. In this manner, all of the top layers can be formed to create a plurality (eg, 12) of electrically isolated segments, one for each LED in the group.

在一實施例中,為了維持接合墊與電路跡線區之間的墊連續性,該等區段具有單片構造。此構造可經由同質基台晶圓上之光微影工藝製造而成,該晶圓較佳為BeO或選自某些材料之群組,該等材料較佳既導熱且亦電絕緣,例如,AlN、鑽石、矽、GaN及其類似者。 In one embodiment, to maintain pad continuity between the bond pads and the circuit trace regions, the segments have a monolithic configuration. The structure may be fabricated by a photolithography process on a homogeneous substrate wafer, preferably BeO or a group selected from certain materials, preferably thermally and electrically insulating, for example, AlN, diamonds, tantalum, GaN and the like.

在本實例之情形中,金屬之第一晶種層可經由一遮罩藉由習知濺鍍手段來濺鍍而成,該遮罩具有互鎖之「L」形圖案,該「L」形圖案被發現為沿基台1406之長軸重複。此圖案經由電鍍工藝而建置。導電性高之金屬(例如,銅)較佳。該晶種層可具有首先濺鍍之黏著層,例如,鈦1506。在電鍍了該厚的、較佳為銅之層之後,藉由濺鍍或電鍍手段來沈積擴散層1504a,例如,鎳。最後,可藉由濺鍍或電鍍手段來沈積保護層1501。此保護層通常為濺鍍之貴重金屬,例如,銀或金。通常使用此等金屬係因為導線在習知上且易於接合至此保護層1501。此保護層亦防止電流載運層1505之氧化。在本發明之一實施例中,提供一焊料堤(或焊料障壁)(例如,焊料障壁1503)層。焊料堤將接合墊區1511與電路跡線/線接合區1513分離且防止來自 晶粒(在接合墊之頂部上)下方之焊料1699遷移至可能固定線接合之區(線接合墊區)中或上。此區中之焊料會對線接合可靠性造成不利影響。焊料堤(例如,焊料堤1503)較佳地經由遮罩藉由濺鍍手段沈積而成且較佳地為高氧化性材料,例如,TiW。 In the case of the present example, the first seed layer of metal may be sputtered by a conventional sputtering method through a mask having an interlocking "L" pattern, the "L" shape The pattern is found to repeat along the long axis of the base 1406. This pattern is built through an electroplating process. A metal having high conductivity (for example, copper) is preferred. The seed layer may have an adhesive layer that is first sputtered, such as titanium 1506. After plating the thick, preferably copper, layer, a diffusion layer 1504a, such as nickel, is deposited by sputtering or electroplating. Finally, the protective layer 1501 can be deposited by sputtering or electroplating. This protective layer is typically a sputtered precious metal such as silver or gold. These metal systems are commonly used because the wires are conventionally and easily joined to the protective layer 1501. This protective layer also prevents oxidation of the current carrying layer 1505. In one embodiment of the invention, a layer of solder bank (or solder barrier) (eg, solder barrier 1503) is provided. The solder bank separates the bond pad region 1511 from the circuit trace/wire bond region 1513 and prevents from The solder 1699 below the die (on top of the bond pad) migrates into or onto the area where the wire is bonded (wire bond pad area). The solder in this area can adversely affect wire bonding reliability. The solder bank (e.g., solder bank 1503) is preferably deposited by sputtering through a mask and is preferably a highly oxidizing material, such as TiW.

在圖15D之情形中,兩個例示性電隔離L形結構劃有陰影1510及1520。有陰影之L形結構1510及1520中之每一者表示一臂(接合墊)與支柱組合之電連接佈局。焊料堤(例如,焊料堤1530)。此獨特之幾何形狀允許LED置放成陣列,其間之間隔具有絕對最小值。此密度允許在間隔最小之情況下獲得優異之功率輸出。焊料堤亦允許在所使用之間隔最小的情況下自LED有效地移除熱。 In the case of Figure 15D, two exemplary electrically isolated L-shaped structures are shaded 1510 and 1520. Each of the shaded L-shaped structures 1510 and 1520 represents an electrical connection arrangement of an arm (bond pad) in combination with the post. Solder bank (eg, solder bank 1530). This unique geometry allows the LEDs to be placed in an array with an absolute minimum between them. This density allows for excellent power output with minimal separation. The solder bank also allows for efficient removal of heat from the LEDs with minimal spacing.

如上所述,在接合墊區域1511與線接合/電路跡線區域1513之間的焊料障壁1530防止接合墊與LED之間的焊料散佈至線接合區域1513上且污染可能與線接合介接的表面。焊料堤1530較佳藉由濺鍍可高度氧化之金屬或金屬組合(例如,TiW)沈積而成。TiW將易於氧化且藉此防止任何焊料遍佈其上。取決於特定實施方案,TiW之厚度可為約幾埃或幾奈米。 As described above, the solder barrier 1530 between the bond pad region 1511 and the wire bond/circuit trace region 1513 prevents solder between the bond pad and the LED from spreading onto the wire bond region 1513 and contaminating the surface that may interface with the wire bond. . Solder bank 1530 is preferably deposited by sputtering a highly oxidizable metal or metal combination (e.g., TiW). The TiW will be susceptible to oxidation and thereby prevent any solder from spreading over it. Depending on the particular embodiment, the thickness of the TiW can be about a few angstroms or a few nanometers.

現參看圖16A至圖16C來描述撓曲電路1403。圖16A為圖14B之撓曲電路1403的俯視圖。圖16B為根據本發明之實施例的圖14B之撓曲電路1403之等角分解圖,說明了撓曲電路堆疊之垂直構造及其相對於微通道冷卻器1401之位置及定向。圖16C為圖14B之撓曲電路1403之橫截面,其說 明了一旦裝配好之堆疊的各個層。 The flex circuit 1403 will now be described with reference to Figures 16A-16C. Figure 16A is a top plan view of the flex circuit 1403 of Figure 14B. 16B is an isometric exploded view of the flex circuit 1403 of FIG. 14B illustrating the vertical configuration of the flex circuit stack and its position and orientation relative to the microchannel cooler 1401, in accordance with an embodiment of the present invention. 16C is a cross section of the flex circuit 1403 of FIG. 14B, which is said Know the layers of the stack once assembled.

在本實例中,撓曲電路1403為由兩個電隔離層及關聯聚醯胺隔離層以及黏著層組成的多層可撓總成。陽極墊1601存在於撓曲電路1403之頂部邊緣(作為陰極墊1602)上。此等墊區域藉由(例如)在所要區中自該堆疊移除所有上述層之材料而為穩固之電接觸區域至適當之銅導電層提供各別線安裝。可以相同方式自一系列三個陽極線接合墊1603及陰極線接合墊1604上方之區域移除材料。此等暴露之銅區域可塗佈有鎳障壁且蓋上金以便提供可接合之表面。在一實施例中,撓曲電路1403亦提供一安裝區域1605及用於ESD防護之接合墊對。在所說明之組態中,存在六個此類區域。每一區域具有一陰極及陽極墊且位於上部導電層上。另一層連接至一墊,該墊藉由一捕獲式電鍍通孔而與該層之其餘部分隔離。 In the present example, flex circuit 1403 is a multilayer flexible assembly comprised of two electrically isolating layers and associated polyimide barrier layers and an adhesive layer. An anode pad 1601 is present on the top edge of the flex circuit 1403 (as the cathode pad 1602). These pad regions provide separate wire mounting for a stable electrical contact region to a suitable copper conductive layer by, for example, removing all of the above layers of material from the stack in the desired region. Material can be removed from a series of three anode wire bond pads 1603 and regions above the cathode wire bond pads 1604 in the same manner. Such exposed copper regions may be coated with a nickel barrier and covered with gold to provide a bondable surface. In one embodiment, the flex circuit 1403 also provides a mounting area 1605 and a mat pair for ESD protection. In the configuration described, there are six such areas. Each zone has a cathode and anode pad and is located on the upper conductive layer. The other layer is connected to a pad that is isolated from the remainder of the layer by a capture plated through hole.

根據本實例,撓曲電路1403之中心由一電絕緣聚醯胺芯1615組成,該電絕緣聚醯胺芯由介電材料(例如,可購自特拉華威爾明頓(Wilmington,DE)之Dupont的Kapton)製成。在一實施例中,在此芯之底部上附加地生長一銅層且形成一陰極導體層1614。相同之製程可應用於芯之頂部,且此層形成一陽極導體層1616。銅厚度可變化,但應儘可能地厚,以最大化電流載運能力,同時仍維持適當之彎曲半徑以適應燈頭模組作為一個整體時的幾何形狀約束。理想地,所有其他層應保持在最小可製造之厚度,以便不進一步減少撓曲電路1403之可撓性。 According to the present example, the center of the flex circuit 1403 is comprised of an electrically insulating polyimide core 1615 made of a dielectric material (e.g., Dupont available from Wilmington, DE). Made of Kapton). In one embodiment, a copper layer is additionally grown on the bottom of the core and a cathode conductor layer 1614 is formed. The same process can be applied to the top of the core and this layer forms an anode conductor layer 1616. The thickness of the copper can vary, but should be as thick as possible to maximize current carrying capacity while still maintaining a proper bend radius to accommodate the geometric constraints of the cap module as a whole. Ideally, all other layers should be maintained at a minimum manufacturable thickness so as not to further reduce the flexibility of the flex circuit 1403.

在本實例之情形中,黏著層1617置放於陽極層1616之表面之頂部上。其目的為允許聚醯胺保護覆蓋層1618在撓曲堆疊之頂面上。如圖16A中所示,在希望接近陽極導體之區域中移除此兩個層。相同之製程應用於具有黏著層1613及覆蓋層1612的陰極導體層之暴露表面。 In the case of this example, an adhesive layer 1617 is placed on top of the surface of the anode layer 1616. The purpose is to allow the polyamine protective cover layer 1618 to be on the top surface of the flex stack. As shown in Figure 16A, the two layers are removed in the area where it is desired to be close to the anode conductor. The same process is applied to the exposed surface of the cathode conductor layer having the adhesive layer 1613 and the cover layer 1612.

大致具有微通道冷卻器1401之尺寸的黏著層1610可用於在最後之疊層製程期間將微通道冷卻器1401接合至撓曲電路1403。 An adhesive layer 1610 having substantially the dimensions of the microchannel cooler 1401 can be used to bond the microchannel cooler 1401 to the flex circuit 1403 during the final lamination process.

參看圖16C,請注意,若巨型反射器被設定成在LED之發射層上方過高,則輸出效率將受損,因為光子將撞擊於反射器之底面上而不進入巨型反射器入口孔隙。反射器對由LED發射之光子的有效捕獲被稱為捕獲效率。撞擊於反射器之底側上的光子將被浪費,且其將僅使反射器變暖而不對工件起作用。另一方面,若巨型反射器被設定成過於接近LED之發射表面,則有可能其可觸碰到導線且造成短路、ESD或使用壽命問題。因而,在一實施例中,使用隔片層1611使反射器之基底位於與LED陣列1407之發射表面相距精確的所要距離處。根據一實施例,反射器對之進口孔隙位於LED陣列1407之發光表面上方或下方0至25微米(範圍係0至250微米)內。注意,在本實例中,隔片層1611不延伸遠至其他層,以免不必要地給彎曲區添加厚度,添加厚度將會使撓曲電路1403繞著燈體之邊緣彎曲更困難。 Referring to Figure 16C, note that if the giant reflector is set too high above the emission layer of the LED, the output efficiency will be compromised because the photons will impinge on the bottom surface of the reflector without entering the giant reflector inlet aperture. The effective capture of the photons emitted by the reflector by the LED is referred to as capture efficiency. Photons impinging on the bottom side of the reflector will be wasted and it will only warm the reflector without acting on the workpiece. On the other hand, if the giant reflector is set too close to the emitting surface of the LED, it is possible that it can touch the wire and cause short circuit, ESD or lifetime problems. Thus, in one embodiment, the spacer layer 1611 is used to position the substrate of the reflector at a desired distance from the emitting surface of the LED array 1407. According to an embodiment, the inlet aperture of the reflector pair is located within 0 to 25 microns (range 0 to 250 microns) above or below the light emitting surface of LED array 1407. Note that in this example, the spacer layer 1611 does not extend as far as the other layers, so as not to unnecessarily add thickness to the curved regions, and adding thickness will make the flex circuit 1403 more difficult to bend around the edges of the lamp body.

儘管在本實例中,撓曲電路1403展示為繞著燈體1404之一側纏繞,但在替代實施例中,陽極層及陰極層中之一者 或兩者可繞著兩側纏繞,且陽極層及陰極層可在兩個側之間連續或在兩個側之間具有電不連續性。 Although in the present example, flex circuit 1403 is shown wrapped around one side of lamp body 1404, in an alternate embodiment, one of the anode layer and the cathode layer Or both may be wound around both sides, and the anode and cathode layers may be continuous between the two sides or have electrical discontinuities between the two sides.

參看圖17A至圖17F,現將描述LED陣列1407之新穎特性。圖17A為根據本發明之實施例的裝配至撓曲電路及微通道冷卻器之LED陣列的等角視圖。圖17B為圖17A之LED陣列的俯視圖。圖17C為圖17A之區段A的放大圖,展示了用於圖17B之LED陣列的串聯LED群組的線接合連接。圖17D為圖17B之區段AA的另一放大圖,展示了該串聯LED群組中之第一個LED。 Referring to Figures 17A through 17F, the novel features of LED array 1407 will now be described. 17A is an isometric view of an LED array assembled to a flex circuit and a microchannel cooler, in accordance with an embodiment of the present invention. Figure 17B is a top plan view of the LED array of Figure 17A. Figure 17C is an enlarged view of section A of Figure 17A showing the wire bond connections for the series LED groups of the LED array of Figure 17B. Figure 17D is another enlarged view of section AA of Figure 17B showing the first LED of the series of LEDs in series.

在本實例之情形中,每一LED或封裝在LED或封裝下側上建構有陽極墊1701以用於SMT錫焊及置放。陰極墊1702(圖17E中展示)位於頂面上朝向LED之共同邊緣。較佳地,陰極墊1702係針對待固定之線接合的球而設計。具體言之,在端接LED表面上之線接合時附接的線接合之支座或楔塊末端將會需要過多的向下之壓力且損壞LED磊晶層。線1709之陽極支座1799固定至形成之陽極跡線的支柱(其中該跡線形成一線接合墊)。此兩個墊為LED提供電連接。LED之交替定向藉由圖17B說明。該交替定向促進了高密度陣列之形成,因為其允許串聯組態,其中LED之間的電阻最小,此與先前技術組態相反。 In the case of this example, each LED or package is constructed with an anode pad 1701 on the underside of the LED or package for SMT soldering and placement. Cathode pads 1702 (shown in Figure 17E) are located on the top surface toward the common edge of the LED. Preferably, the cathode pad 1702 is designed for the ball to be secured by the wire to be secured. In particular, the wire-bonded abutment or wedge end that is attached when the wire is terminated on the surface of the LED will require excessive downward pressure and damage the LED epitaxial layer. The anode support 1799 of line 1709 is affixed to the struts of the formed anode trace (where the trace forms a line bond pad). These two pads provide an electrical connection to the LEDs. The alternate orientation of the LEDs is illustrated by Figure 17B. This alternate orientation promotes the formation of a high density array because it allows for a series configuration where the resistance between the LEDs is minimal, as opposed to prior art configurations.

圖17C為圖17A之區段A的放大圖,展示了用於一個基台與下一個基台之開頭的線接合連接,該下一個基台係與第一個基台電並聯連接。亦展示一ESD防護裝置,在此種情況下為SMT齊納二極體。 Figure 17C is an enlarged view of section A of Figure 17A showing the wire bond connection for the beginning of one base and the next base, the next base being electrically connected in parallel with the first base. An ESD guard is also shown, in this case an SMT Zener diode.

圖17D為圖17B之區段AA的另一放大圖,展示了一串聯LED群組中之第一個LED及陽極至撓曲電路之線接合(例如,線接合1708),其中球源於基台處且尾部連接至撓曲電路1403之陽極墊1603。 17D is another enlarged view of section AA of FIG. 17B showing the first LED of a series of LEDs and the wire bonding of the anode to the flex circuit (eg, wire bond 1708), wherein the ball is sourced from the base The stage is connected to the anode pad 1603 of the flex circuit 1403.

圖17E為圖17B之區段AB的另一放大圖,展示了一串聯LED群組之中間LED及LED陰極墊1702至基台的線接合1709。在一實施例中,每LED存在四個此類之陰極墊1702及線接合。 Figure 17E is another enlarged view of section AB of Figure 17B showing the intermediate LED of a series LED group and the wire bond 1709 of the LED cathode pad 1702 to the base. In one embodiment, there are four such cathode pads 1702 and wire bonds per LED.

圖17F為圖17B之區段AC的另一放大圖,展示了一串聯LED群組中之最後一個LED。展示了例示性LED陰極墊至撓曲陰極墊之線接合(例如,線接合1710)。在一實施例中,此等線接合為系統中之最長線接合。應務必使其長度最小化以防止過度之電壓降。可考慮多根線至單一墊,以及矩形或其他幾何形狀及諸如銅、銀。金及其類似者之材料。亦展示起始LED及其與下一個LED基台之各別接合。 Figure 17F is another enlarged view of section AC of Figure 17B showing the last LED of a series of LEDs in series. Wire bonding of an exemplary LED cathode pad to a flexing cathode pad (eg, wire bond 1710) is shown. In one embodiment, the wire bonds are the longest wire bonds in the system. It is important to minimize its length to prevent excessive voltage drops. Multiple wires can be considered to a single pad, as well as rectangular or other geometric shapes and such as copper, silver. Materials for gold and its like. The starting LEDs and their respective engagement with the next LED base are also shown.

根據一實施例,燈頭模組1400具有三個基台陣列。藉由共用由撓曲電路1403提供之陽極層及陰極層,可將多個基台並聯接線。在本實例之情形中,此產生了12(範圍係2至200)個串聯LED之三個並聯陣列(範圍係2至20)的最終電總成。 According to an embodiment, the base module 1400 has three base arrays. By sharing the anode layer and the cathode layer provided by the flex circuit 1403, a plurality of bases can be connected in parallel. In the case of this example, this produces a final electrical assembly of three parallel arrays (ranging from 2 to 20) of 12 (range 2 to 200) series LEDs.

所有線接合可由單根線或多根線組成。此等線可沿直線(如圖所示)安裝或按堆疊組態來安裝。線之直徑在需要時可變化以獲得具體應用所需之電流容量。較大之直徑可能需要較大之線環;因此,在具有嚴苛機械約束之應用中使 用多個較小直徑之接合可能為可取的。 All wire bonds can consist of a single wire or multiple wires. These lines can be installed in a straight line (as shown) or in a stacked configuration. The diameter of the wire can be varied as needed to achieve the current capacity required for a particular application. Larger diameters may require larger wire loops; therefore, in applications with severe mechanical constraints It may be desirable to use multiple smaller diameter joints.

圖18A概念上說明根據本發明之實施例的一串聯LED群組的電力路徑。圖18B為圖18A之串聯LED群組的前4個LED的放大圖。圖18C為沿剖面線A截取的圖18A之串聯LED群組的橫截面。在圖18A中,參看圖15D描述之多個L形結構中的三個劃有陰影。圖18D與圖18A相同,但除去了例示性L形結構之陰影。 Figure 18A conceptually illustrates a power path for a series of LED groups in accordance with an embodiment of the present invention. Figure 18B is an enlarged view of the first four LEDs of the series LED group of Figure 18A. Figure 18C is a cross section of the series LED group of Figure 18A taken along section line A. In Fig. 18A, three of the plurality of L-shaped structures described with reference to Fig. 15D are shaded. Figure 18D is the same as Figure 18A, but with the shadow of an exemplary L-shaped structure removed.

根據本實例,電流串聯地自撓曲電路1403之一陽極層經由線接合行進至基台1406之一線接合墊,該線接合墊連接至第一個LED之陽極墊,該陽極墊在該LED之下側上。圖18C展示了該一系列LED中之第一個LED的橫截面。電流路徑穿過線接合,經由LED至基台,其中大部分之電能轉換成光能。亦產生廢熱能量,作為副產品。LED p-n接面愈冷,其光發射愈有效。冷卻子系統1470之意圖為冷卻LED陣列1407,同時在實質電流位準下操作且仍使接面溫度維持低至足以給出LED陣列1407之合理有效的操作。電力接著自LED之陰極經由線接合1709而行進至基台之下一個「L」的支柱及接合墊。此圖案繼續,直至到達該串聯LED群組之結尾為止。 According to the present example, the current is serially routed from one of the anode layers of the flex circuit 1403 via wire bonding to a wire bond pad of the base 1406 that is connected to the anode pad of the first LED, the anode pad being at the LED On the lower side. Figure 18C shows a cross section of the first of the series of LEDs. The current path is bonded through the wire, through the LED to the base, where most of the electrical energy is converted into light energy. Waste heat energy is also produced as a by-product. The colder the LED p-n junction, the more effective its light emission. The cooling subsystem 1470 is intended to cool the LED array 1407 while operating at substantial current levels and still maintain the junction temperature low enough to give reasonably efficient operation of the LED array 1407. Power then travels from the cathode of the LED via wire bond 1709 to a "L" post and bond pad below the base. This pattern continues until the end of the series LED group is reached.

圖18A展示了在到達該一系列LED中之最後一個LED之前上述過程如何以Z字形圖案來重複,在到達最後一個LED時,使用類型1710之線接合代替類型1709之線接合來將最後一個LED之陰極墊連接至撓曲電路1403之陰極層1604,如圖17A至圖17F之情形中所說明。重要的係要注意 到,雖然本實例使用了十二個串聯LED,但可視應用而使用更長或更短系列之群組。同樣地,LED陣列1407可由單個基台或眾多基台組成,且僅受以下兩項所限制:撓曲電路1403之電流載運能力及微通道冷卻器之將熱自LED陣列1407轉移走且維持可接受之接面溫度的能力。 Figure 18A shows how the above process repeats in a zigzag pattern before reaching the last of the series of LEDs. When the last LED is reached, the wire bonding of type 1710 is used instead of the wire bonding of type 1709 to bring the last LED. The cathode pad is connected to the cathode layer 1604 of the flex circuit 1403 as illustrated in the context of Figures 17A-17F. Important department to pay attention to Thus, although this example uses twelve series LEDs, a longer or shorter series of groups can be used for visual applications. Similarly, the LED array 1407 can be composed of a single base or a plurality of bases and is limited only by the current carrying capacity of the flex circuit 1403 and the heat of the microchannel cooler being transferred away from the LED array 1407 and maintained. The ability to accept the junction temperature.

圖19說明根據本發明之實施例的來自例示性80 mm長之反射器的照射度圖案,該反射器產生了在反射器窗1910下方65 mm處聚焦的約25 mm寬之受照射區域。展示照射度圖案1920a-i之平面1930a-i以5 mm之增量自反射器下方25 mm增至反射器下方65 mm。在不同深度處之照射度圖案的趨向愈接近於反射器愈窄,然而,由於此反射器設計之焦距相對遠(65 mm),因此自光場之下部至上部,照射度圖案寬度不會顯著改變。因此,此意謂著在此焦距處在一增加之「場深度」內所要射束寬度保持相對恆定,且此效應隨著焦平面距離增加而增加。根據一實施例,在操作期間,自出口孔隙至工件之表面的距離約為反射器之長度(即,自進口孔隙至出口孔隙之距離)的0.01至0.1(範圍係0.01至10)倍。 19 illustrates an illuminance pattern from an exemplary 80 mm long reflector that produces an illuminated area of approximately 25 mm width focused at 65 mm below the reflector window 1910, in accordance with an embodiment of the present invention. The plane 1930a-i of the display illuminance pattern 1920a-i is increased from 5 mm below the reflector to 65 mm below the reflector in increments of 5 mm. The closer the illuminance pattern at different depths is to the narrower the reflector, however, since the focal length of this reflector design is relatively far (65 mm), the illuminance pattern width will not be significant from the lower part to the upper part of the light field. change. Therefore, this means that the beam width remains relatively constant within an increased "field depth" at this focal length, and this effect increases as the focal plane distance increases. According to an embodiment, the distance from the exit aperture to the surface of the workpiece during operation is from about 0.01 to 0.1 (range 0.01 to 10) times the length of the reflector (ie, the distance from the inlet aperture to the exit aperture).

本發明之實施例的核心為高密度之LED陣列(例如,LED陣列1407),其導致具有最高之可能照射度(「亮度」)的最小之可能輻射區域。此高密度輻射源允許在最小之可能大小的反射器系統中實現精確之光學控制,該高密度輻射源歸因於有效地減輕高熱密度之極低熱阻基板設計(例如,微通道冷卻器1401)而成為可能。該高密度輻射源亦允許 實現具有高捕獲效率之反射器。換言之,自該源發射之輻射能中的高百分比可被反射器捕獲且加以控制。由於此級別增加之光學控制,可達成之一個所要照射度圖案被稱為「頂帽」圖案。「頂帽」照射度圖案為較高照射度值在某距離內為均一的圖案,其中隨著照射度向較低或可忽略之值減小而在任一側上具有陡峭之邊界。此種情況為與典型高斯或平滑錐形圖案相比較的,在典型高斯或平滑錐形圖案中,照射度自中心峰值更平滑地下降。此類照射度圖案可有利於實際工業應用,諸如UV固化。在此特定實例中,高密度輻射區域已組態成高縱橫比之線源,使得頂帽分佈垂直於反射器之長度形成。照射度圖案之其他態樣(例如,工作距離較大、場之圖案深度較大、均一性增加及未充分利用之溢散光減小)皆為所要的,且皆為用高密度輻射源更能達成的,此歸因於高密度輻射源提供的經改良之光學控制。 The core of an embodiment of the invention is a high density LED array (e.g., LED array 1407) that results in the smallest possible radiation area with the highest possible illumination ("brightness"). This high-density radiation source allows for precise optical control in a minimum possible size reflector system due to the extremely low thermal resistance substrate design that effectively mitigates high thermal densities (eg, microchannel cooler 1401) ) is possible. The high density radiation source also allows A reflector with high capture efficiency is achieved. In other words, a high percentage of the radiant energy emitted from the source can be captured and controlled by the reflector. Due to the increased optical control of this level, one desired illumination pattern is referred to as a "top hat" pattern. The "top hat" illuminance pattern is a uniform pattern of higher illuminance values over a distance with steep edges on either side as the irradiance decreases toward a lower or negligible value. This is compared to a typical Gaussian or smooth tapered pattern in which the illumination decreases more smoothly from the center peak. Such illuminance patterns can be advantageous for practical industrial applications, such as UV curing. In this particular example, the high density radiation area has been configured as a line source of high aspect ratio such that the top hat distribution is formed perpendicular to the length of the reflector. Other aspects of the illuminance pattern (eg, large working distance, large depth of field pattern, increased uniformity, and reduced utilization of underutilized light) are desirable, and are more efficient with high-density radiation sources. This is achieved due to the improved optical control provided by the high density radiation source.

本發明之實施例藉由將巨型反射器輪廓塑形成一形狀而產生一頂帽量變曲線,該圖案接近地近似或表示在直線槽中在每一反射器半部(例如,1901a及1901b)上之多個(例如,5、6、7、......、10)橢圓形輪廓。根據一實施例,巨型反射器輪廓最佳使用Photopia來設計,Photopia為可購自美國科羅拉多威斯敏斯特(Westminster,Colorado USA)LTI Optics之非成像射線追蹤套裝軟體。假如需要,可用一或多個數學方程式來定義此等輪廓。 Embodiments of the present invention produce a cap variability curve by shaping a giant reflector profile into a shape that approximates or represents in a linear groove on each reflector half (e.g., 1901a and 1901b) Multiple (eg, 5, 6, 7, ..., 10) elliptical profiles. According to one embodiment, the giant reflector profile is optimally designed using Photopia, a non-imaging ray tracing kit software available from LTI Optics, Westminster, Colorado, USA. One or more mathematical equations can be used to define such contours if desired.

每一橢圓操縱或控制撞擊於其上之光子,且使其以某方 式偏轉(反射)以便最後將更多光子自工件上圖案之中心「推動」至工件上圖案之邊緣。出於許多理由,此可有利於聚合物之光固化。處於大工作距離之照射度圖案允許在輸出窗清潔之間的較長時間以及較不易發生窗損壞。均一性增加亦允許更好地利用光子,來達成不對工件之任何部分過度照射(浪費)或照射不足(欠固化)的目標。在固化需要固化在與輸出窗相距某範圍之距離處的表面上的3D物件時,場深度較大之照射度圖案為有益的。此類3D物件之真實世界實例為墨水固化在啤酒罐或蘇打水罐上。 Each ellipse manipulates or controls the photons impinging on it and causes it to be on one side Deflection (reflection) to finally "push" more photons from the center of the pattern on the workpiece to the edge of the pattern on the workpiece. This can facilitate photocuring of the polymer for a number of reasons. Illumination patterns at large working distances allow for longer periods of time between output window cleaning and less likely to cause window damage. The increase in uniformity also allows for better use of photons to achieve the goal of not over-illuminating (wasting) or under-irradiation (under-curing) of any part of the workpiece. An illuminance pattern having a greater depth of field is beneficial when curing a 3D object that needs to be cured on a surface at a distance from the output window. A real-world example of such a 3D object is ink curing on a beer can or soda can.

圖20為說明根據本發明之實施例的針對5 mm、25 mm及50 mm之間隙距離(即,巨型反射器之窗與工件表面之間的距離)在工件表面之中心處的各種照射度量變曲線的橫截面的曲線圖。x軸表示以毫米為單位的距射束中心之距離。y軸表示以瓦特每平方公分(W/cm2)為單位的照射度。 Figure 20 is a diagram showing various illumination metrics at the center of the workpiece surface for a gap distance of 5 mm, 25 mm, and 50 mm (i.e., the distance between the window of the giant reflector and the surface of the workpiece) in accordance with an embodiment of the present invention. A graph of the cross section of the curve. The x-axis represents the distance from the center of the beam in millimeters. The y-axis represents the illuminance in watts per square centimeter (W/cm 2 ).

如可參考本實例觀測到,高密度LED陣列允許實現可投射至工件上之廣泛各種射束照射度圖案,包括:高中心峰值、平頂頂帽及不對稱頂帽。本實例說明了在5 mm間隙處之高照射度射束2010、在25 mm(2020)處及在50 mm(2030)處之頂帽射束,及在25 mm處之不對稱頂帽射束2040的量變曲線。有利地,不對稱量變曲線可用在氧抑制造成不黏著固化問題的光固化中。不對稱射束之整個功率部分可預先固化不黏著之工件聚合物之頂面,且亦抑制來自大氣之更多氧擴散至工件上未固化之聚合物中。此曲線圖展示在右手側具有較高強度之不對稱量變曲線,其對於 自該圖之右側運行至左側之傳送機而言可為最佳的。該傳送機可在任一方向上運行。在該不對稱中亦可存在傾角,或不對稱量變曲線可在左手側具有較高強度。注意,多個燈亦可沿運送機之長度或正交於運送機之長度順序地排列。燈頭模組中之每一者可產生不同或相同之射束量變曲線(例如,高中心峰值、平頂頂帽及不對稱頂帽)。 As can be seen with reference to this example, high density LED arrays allow for a wide variety of beam illumination patterns that can be projected onto a workpiece, including: high center peaks, flat top hats, and asymmetrical top hats. This example illustrates a high-illumination beam 2010 at a 5 mm gap, a top hat beam at 25 mm (2020) and at 50 mm (2030), and an asymmetrical top hat beam at 25 mm The quantitative curve of 2040. Advantageously, the asymmetrical amount curve can be used in photocuring where oxygen inhibition causes non-stick curing problems. The entire power portion of the asymmetric beam pre-cures the top surface of the non-sticky workpiece polymer and also inhibits more oxygen from the atmosphere from diffusing into the uncured polymer on the workpiece. This graph shows an asymmetrical amount curve with higher intensity on the right hand side, which It is best to run from the right side of the diagram to the conveyor on the left. The conveyor can be operated in either direction. There may also be a dip in the asymmetry, or an asymmetrical amount curve may have a higher intensity on the left hand side. Note that the plurality of lamps may also be sequentially arranged along the length of the conveyor or orthogonal to the length of the conveyor. Each of the lamp head modules can produce different or identical beam volume curves (eg, high center peaks, flat top hats, and asymmetrical top hats).

對在量變曲線曲線下之區域求積分給出射束中能量之大致程度。在一行連續之反射器中,25 mm寬之量變曲線2020具有與50 mm寬之量變曲線2030相同之總能量,但50 mm寬之射束2030之峰值強度約為25 mm寬之射束2020之峰值強度的一半。 The integration of the area under the curve of the quantitative curve gives the approximate degree of energy in the beam. In a row of continuous reflectors, the 25 mm wide variable curve 2020 has the same total energy as the 50 mm wide variable curve 2030, but the 50 mm wide beam 2030 has a peak intensity of about 25 mm wide beam 2020. Half of the peak intensity.

高峰值照射度、近高斯射束量變曲線可有利於在短時段內需要大量能量進入移動中之運送機上之材料的固化應用,而頂帽量變曲線可有利於在較長時間內需要能量輸入的彼等應用,諸如受反應動力學限制之彼等應用。 The high peak illuminance, near Gaussian beam variability curve can be beneficial for curing applications requiring a large amount of energy into the moving conveyor on a short period of time, while the top cap variability curve can facilitate energy input for a longer period of time. Their applications, such as those limited by reaction kinetics.

許多光化學反應具有表面固化抑制相關態樣,該等態樣需要在長至足以使反應發生之時段內將光子注入至材料中。若光子過快地到達,則其可能未得到利用,因為獲得適當固化所需之化學反應在比光子之到達時段更長之時段中發生。因此,可能有利的係,將射束散佈在較廣之區域上,使得固化材料在射束下度過較長時間而不必使在UV照射裝置下移動材料之運送機變慢。另外,頂帽分佈可提供所需之最小量的固化能量,而不會過度照射材料之其他部分,因此浪費能量。用高密度LED陣列可更有效地達成 頂帽分佈,此係因為直線狀(高縱橫比)輻射區域之橫截面為小的,因此提供更好之光學控制。請注意,在高密度LED陣列(例如,LED陣列1407)之情形中,頂帽量變曲線極其均一,不展示像素化或較低密度LED陣列之蓮蓬頭效應(shower head effect)。 Many photochemical reactions have a surface cure inhibition related aspect that requires photons to be injected into the material for a period of time sufficient to allow the reaction to occur. If a photon arrives too quickly, it may not be utilized because the chemical reaction required to obtain proper curing occurs over a longer period of time than the photon's arrival period. Thus, it may be advantageous to spread the beam over a relatively wide area such that the cured material spends a relatively long time under the beam without having to slow the conveyor moving the material under the UV illumination device. In addition, the top hat distribution provides the minimum amount of curing energy required without excessively illuminating other portions of the material, thus wasting energy. Achieve more efficiently with high-density LED arrays The top hat distribution is due to the small cross section of the linear (high aspect ratio) radiation area, thus providing better optical control. Note that in the case of high density LED arrays (eg, LED array 1407), the top cap variation curve is extremely uniform and does not exhibit the shower head effect of a pixelated or lower density LED array.

雖然已說明並描述了本發明之實施例,但應清楚,本發明不僅限於此等實施例。在不脫離如申請專利範圍中所描述的本發明之精神及範疇的情況下,熟習此項技術者將顯而易見眾多修改、改變、變化、替換及等效物。 While the embodiments of the invention have been illustrated and described, it is understood that the invention is not limited to the embodiments. Numerous modifications, changes, variations, substitutions and equivalents will be apparent to those skilled in the art without departing from the spirit and scope of the invention.

100‧‧‧LED陣列 100‧‧‧LED array

152‧‧‧基板 152‧‧‧Substrate

154‧‧‧微反射器 154‧‧‧Microreflector

156‧‧‧發光二極體 156‧‧‧Lighting diode

158‧‧‧引線 158‧‧‧ lead

201‧‧‧反射器 201‧‧‧ reflector

202‧‧‧外殼 202‧‧‧Shell

203‧‧‧入口冷卻管 203‧‧‧Inlet cooling tube

204‧‧‧出口冷卻管 204‧‧‧Export cooling tube

205‧‧‧主要陰極線 205‧‧‧main cathode line

207a-b‧‧‧端蓋 207a-b‧‧‧ end cap

304a-b‧‧‧陰極匯流排條 304a-b‧‧‧cathode bus bar

305‧‧‧燈體 305‧‧‧Light body

306‧‧‧燈體 306‧‧‧Light body

310a‧‧‧LED驅動器PCB 310a‧‧‧LED driver PCB

310b‧‧‧LED驅動器PCB 310b‧‧‧LED driver PCB

311‧‧‧電感器 311‧‧‧Inductors

312‧‧‧FET 312‧‧‧FET

313a‧‧‧陰極匯流排條 313a‧‧‧Cathode bus bar

313b‧‧‧陰極匯流排條 313b‧‧‧cathode bus bar

314‧‧‧分離器墊圈 314‧‧‧Separator washer

315a-b‧‧‧陽極匯流排體 315a-b‧‧‧Anode busbar body

316‧‧‧主要出口燈體冷卻流體通道 316‧‧‧Main exit lamp body cooling fluid passage

317‧‧‧共同陽極基板層 317‧‧‧Common anode substrate layer

318‧‧‧LED陣列封裝 318‧‧‧LED array package

320a-d‧‧‧陰極爪 320a-d‧‧‧cathode claw

321a-d‧‧‧陰極爪 321a-d‧‧‧cathode claw

330‧‧‧LED陣列 330‧‧‧LED array

340‧‧‧窗 340‧‧‧ window

341‧‧‧窗座架 341‧‧‧Window frame

350‧‧‧光學反射器層 350‧‧‧Optical reflector layer

351‧‧‧進口 351‧‧‧ Import

352‧‧‧中間部分 352‧‧‧ middle part

353‧‧‧出口孔隙 353‧‧‧Export pores

360‧‧‧主要入口燈體冷卻流體通道 360‧‧‧Main inlet lamp body cooling fluid passage

361‧‧‧主要出口燈體冷卻流體通道 361‧‧‧Main exit lamp body cooling fluid passage

375‧‧‧陰極十字板 375‧‧‧Cathode cross board

410‧‧‧微通道冷卻器 410‧‧‧Microchannel cooler

411‧‧‧主入口微通道 411‧‧‧Main entrance microchannel

420a-c‧‧‧O形環 420a-c‧‧‧O-ring

430a‧‧‧主要出口微通道冷卻器冷卻流體通道 430a‧‧‧Main export microchannel cooler cooling fluid channel

430b‧‧‧主要入口微通道冷卻器冷卻流體通道 430b‧‧‧Main inlet microchannel cooler cooling fluid channel

510‧‧‧撓曲電路 510‧‧‧Flex circuit

511‧‧‧黏著層 511‧‧‧Adhesive layer

512‧‧‧介電分離器層 512‧‧‧Dielectric separator layer

513‧‧‧陰極層 513‧‧‧ cathode layer

514‧‧‧介電隔片層 514‧‧‧ dielectric spacer

520‧‧‧箔 520‧‧‧Foil

525‧‧‧罩蓋層 525‧‧‧ Cover layer

530‧‧‧實心罩蓋層 530‧‧‧solid cover

531‧‧‧發光二極體 531‧‧‧Lighting diode

532‧‧‧間隙 532‧‧‧ gap

533‧‧‧間隙 533‧‧‧ gap

534‧‧‧陰極線接合墊 534‧‧‧Cathode wire bonding pads

540‧‧‧熱散播器層 540‧‧‧heat spreader layer

610‧‧‧電隔離跡線 610‧‧‧Electrical isolation trace

611a-d‧‧‧段 611a-d‧‧‧

705‧‧‧銷 705‧‧ ‧ sales

710‧‧‧螺絲 710‧‧‧ screws

715‧‧‧螺絲 715‧‧‧ screws

716‧‧‧支座 716‧‧‧Support

810a-b‧‧‧巨型反射器 810a-b‧‧‧Super reflector

811‧‧‧邊緣射線 811‧‧‧Edge ray

820a‧‧‧反射器 820a‧‧‧ reflector

821a-b‧‧‧邊緣射線 821a-b‧‧‧Edge ray

830‧‧‧2 mm焦平面/工件平面 830‧‧2 mm focal plane/work plane

840‧‧‧53 mm焦平面/工件平面 840‧‧‧53 mm focal plane/work plane

850a‧‧‧發光二極體 850a‧‧‧Lighting diode

850b‧‧‧發光二極體 850b‧‧‧Lighting diode

870‧‧‧LED平面 870‧‧‧LED plane

910‧‧‧巨型反射器 910‧‧‧Super reflector

920‧‧‧焦點 920‧‧ ‧ focus

930‧‧‧聚焦射束 930‧‧‧Focus beam

931‧‧‧中心線 931‧‧‧ center line

940‧‧‧2 mm焦平面 940‧‧2 mm focal plane

1400‧‧‧UV LED燈頭模組 1400‧‧‧UV LED lamp head module

1401‧‧‧微通道冷卻器 1401‧‧‧Microchannel cooler

1402‧‧‧齊納二極體 1402‧‧‧Zina diode

1403‧‧‧撓曲電路 1403‧‧‧Flex circuit

1404‧‧‧燈體 1404‧‧‧Light body

1405‧‧‧O型環 1405‧‧‧O-ring

1406‧‧‧基台 1406‧‧‧Abutment

1407‧‧‧LED陣列 1407‧‧‧LED array

1410‧‧‧薄焊料預成型坯 1410‧‧‧Thin solder preforms

1412‧‧‧陽極電極 1412‧‧‧Anode electrode

1413‧‧‧陰極電極 1413‧‧‧Cathode electrode

1415‧‧‧蓋 1415‧‧‧ Cover

1416‧‧‧夾 1416‧‧‧clip

1417‧‧‧反射器端蓋 1417‧‧‧ reflector end cap

1418‧‧‧反射器 1418‧‧‧ reflector

1419‧‧‧電力電纜 1419‧‧‧Power cable

1420‧‧‧輸入管/電力電纜 1420‧‧‧Input pipe/power cable

1421‧‧‧光學窗 1421‧‧‧Optical window

1422‧‧‧窗座架 1422‧‧‧Window frame

1423‧‧‧磁體或螺絲 1423‧‧‧ Magnet or screw

1424‧‧‧磁性窗座架 1424‧‧‧Magnetic window frame

1426‧‧‧小五金 1426‧‧‧Hardware

1427‧‧‧螺絲 1427‧‧‧ screws

1428‧‧‧銷 1428‧‧ ‧ sales

1431‧‧‧小五金 1431‧‧‧Hardware

1432‧‧‧入口管夾 1432‧‧‧Inlet pipe clamp

1434‧‧‧凹穴 1434‧‧‧ recess

1435‧‧‧邊緣 1435‧‧‧ edge

1436‧‧‧凹穴 1436‧‧‧ recess

1440‧‧‧細長開口 1440‧‧‧Slim opening

1450‧‧‧撓曲電路子系統 1450‧‧‧Flex circuit subsystem

1460‧‧‧反射器子系統 1460‧‧‧ reflector subsystem

1461‧‧‧主要出口燈體冷卻流體通道 1461‧‧‧Main exit lamp body cooling fluid passage

1462‧‧‧主要出口燈體冷卻流體通道 1462‧‧‧Main exit lamp body cooling fluid passage

1470‧‧‧冷卻子系統 1470‧‧‧ Cooling subsystem

1501‧‧‧較厚之金墊 1501‧‧‧ thicker gold pad

1502a‧‧‧金蓋板 1502a‧‧‧ gold cover

1502b‧‧‧金蓋板 1502b‧‧‧ gold cover

1503‧‧‧絕緣或焊料擋止層 1503‧‧‧Insulation or solder stop layer

1504a‧‧‧鎳障壁 1504a‧‧‧ Nickel Barrier

1504b‧‧‧鎳障壁 1504b‧‧‧ Nickel Barrier

1505‧‧‧銅層/電流載運層 1505‧‧‧Bronze/current carrying layer

1506b‧‧‧鈦黏著層 1506b‧‧‧Titanium adhesive layer

1510‧‧‧互鎖之L形結構 1510‧‧‧Interlocked L-shaped structure

1511‧‧‧「臂」部分/接合墊 1511‧‧‧"arm" part/join pad

1512‧‧‧線接合墊區域 1512‧‧‧ wire bond pad area

1513‧‧‧電路跡線 1513‧‧‧Circuit trace

1520‧‧‧互鎖之L形結構 1520‧‧‧ interlocking L-shaped structure

1521‧‧‧「臂」部分/接合墊 1521‧‧‧"arm" part/join pad

1522‧‧‧線接合墊區域 1522‧‧‧ wire bond pad area

1523‧‧‧電路跡線 1523‧‧‧Circuit trace

1530‧‧‧焊料障壁 1530‧‧‧ solder barrier

1601‧‧‧陽極墊 1601‧‧‧Anode pad

1602‧‧‧陰極墊 1602‧‧‧ cathode mat

1603‧‧‧陽極線接合墊 1603‧‧‧Anode wire bonding pad

1604‧‧‧陰極線接合墊 1604‧‧‧Cathode wire bonding pads

1605‧‧‧安裝區域 1605‧‧‧Installation area

1610‧‧‧黏著層 1610‧‧‧Adhesive layer

1611‧‧‧隔片層 1611‧‧‧ spacer layer

1612‧‧‧覆蓋層 1612‧‧‧ Coverage

1613‧‧‧黏著層 1613‧‧‧Adhesive layer

1614‧‧‧陰極導體層 1614‧‧‧Cathode conductor layer

1615‧‧‧電絕緣聚醯胺芯 1615‧‧‧Electrically insulated polyamine core

1616‧‧‧陽極導體層 1616‧‧‧Anode conductor layer

1617‧‧‧黏著層 1617‧‧‧Adhesive layer

1618‧‧‧聚醯胺保護覆蓋層 1618‧‧‧ Polyamide protective cover

1699‧‧‧焊料 1699‧‧‧ solder

1701‧‧‧陽極墊 1701‧‧‧Anode pad

1702‧‧‧陰極墊 1702‧‧‧ cathode pad

1708‧‧‧線接合 1708‧‧‧ wire bonding

1709‧‧‧線接合 1709‧‧‧ wire bonding

1710‧‧‧線接合 1710‧‧‧ wire bonding

1799‧‧‧陽極支座 1799‧‧‧Anode support

1801‧‧‧外側邊緣 1801‧‧‧Outer edge

1901a‧‧‧反射器半部 1901a‧‧‧ reflector half

1901b‧‧‧反射器半部 1901b‧‧‧ reflector half

1910‧‧‧反射器窗 1910‧‧‧ reflector window

1920a-i‧‧‧照射度圖案 1920a-i‧‧‧ illuminance pattern

1930a-i‧‧‧平面 1930a-i‧‧‧ plane

圖1A為先前技術LED陣列之一部分的俯視圖。 1A is a top plan view of a portion of a prior art LED array.

圖1B為沿剖面線1B-1B截取的圖1A之LED陣列的視圖。 FIG. 1B is a view of the LED array of FIG. 1A taken along section line 1B-1B.

圖2A為根據本發明之一實施例的UV LED燈頭模組之等角視圖。 2A is an isometric view of a UV LED lamp head module in accordance with an embodiment of the present invention.

圖2B為圖2A之UV LED燈頭模組之正視圖。 2B is a front elevational view of the UV LED lamp head module of FIG. 2A.

2C為圖2A之UV LED燈頭模組之側視圖。 2C is a side view of the UV LED lamp head module of FIG. 2A.

圖3A為圖2A之UV LED燈頭模組之最高層級等角剖示圖。 3A is a top level isometric view of the UV LED lamp head module of FIG. 2A.

圖3B為圖2A之UV LED燈頭模組之最高層級正面剖示圖。 3B is a front cross-sectional view of the highest level of the UV LED lamp head module of FIG. 2A.

圖4A為圖2A之UV LED燈頭模組之一反射器的底部部分及一本體之頂部部分的放大等角剖示圖。 4A is an enlarged isometric cross-sectional view of the bottom portion of the reflector of one of the UV LED lamp head modules of FIG. 2A and the top portion of a body.

圖4B為圖2A之UV LED燈頭模組之一反射器的底部部分及一本體之頂部部分的放大正面剖示圖。 4B is an enlarged front elevational view of the bottom portion of the reflector of one of the UV LED lamp head modules of FIG. 2A and the top portion of a body.

圖5A為說明一LED陣列及其與圖2A之UV LED燈頭模組之一共同陽極基板層之界面的另一放大等角剖示圖。 5A is another enlarged isometric cross-sectional view illustrating the interface of an LED array and its common anode substrate layer with one of the UV LED lamp head modules of FIG. 2A.

圖5B為說明一LED陣列及其與圖2A之UV LED燈頭模組之一共同陽極基板層之界面的另一放大正面剖示圖。 5B is another enlarged front cross-sectional view illustrating the interface of an LED array and its common anode substrate layer with one of the UV LED lamp head modules of FIG. 2A.

圖6為圖2A之UV LED燈頭模組之本體的頂部部分的分解放大等角剖示圖且說明圖2A之UV LED燈頭模組的各個層。 6 is an exploded, isometric, isometric view of the top portion of the body of the UV LED lamp head module of FIG. 2A and illustrating the various layers of the UV LED lamp head module of FIG. 2A.

圖7為移除了端蓋的圖2A之UV LED燈頭模組的反射器之放大等角視圖。 Figure 7 is an enlarged isometric view of the reflector of the UV LED lamp head module of Figure 2A with the end cap removed.

圖8A概念性地說明根據本發明之實施例的對於不同工作距離具有實質上相同之高度的兩個巨型反射器。 Figure 8A conceptually illustrates two giant reflectors having substantially the same height for different working distances in accordance with an embodiment of the present invention.

圖8B為圖8A之放大圖,說明了根據本發明之實施例的2 mm巨型反射器的邊緣射線。 Figure 8B is an enlarged view of Figure 8A illustrating edge rays of a 2 mm giant reflector in accordance with an embodiment of the present invention.

圖9展示根據本發明之實施例的針對2 mm焦平面最佳化的巨型反射器,其中該反射器之每一側具有相對於聚焦在工件上之射束的中心線偏移的焦點。 9 shows a giant reflector optimized for a 2 mm focal plane, wherein each side of the reflector has a focus offset relative to a centerline of a beam focused on the workpiece, in accordance with an embodiment of the present invention.

圖10為說明針對各種通道寬度的估計之對流熱阻的曲線圖。 Figure 10 is a graph illustrating estimated convective thermal resistance for various channel widths.

圖11為說明各種接面溫度之輸出功率的曲線圖。 Figure 11 is a graph illustrating the output power of various junction temperatures.

圖12為說明根據本發明之實施例的具有針對2 mm之焦平面最佳化之反射器的UV LED燈頭之照射度量變曲線的曲線圖。 12 is a graph illustrating an illumination metric curve of a UV LED lamp head having a reflector optimized for a focal plane of 2 mm, in accordance with an embodiment of the present invention.

圖13為說明根據本發明之實施例的具有針對53 mm之焦平面最佳化之反射器的UV LED燈頭之照射度量變曲線的 曲線圖。 Figure 13 is a graph showing the illumination metric curve of a UV LED lamp head having a reflector optimized for a focal plane of 53 mm, in accordance with an embodiment of the present invention. Graph.

圖14A為根據本發明之替代實施例的UV LED燈頭模組的等角視圖。 14A is an isometric view of a UV LED lamp head module in accordance with an alternate embodiment of the present invention.

圖14B為圖14A之UV LED燈頭模組的側視、分解圖。 14B is a side elevation, exploded view of the UV LED lamp head module of FIG. 14A.

圖14C為圖14A之UV LED燈頭模組的後視、分解等角視圖。 14C is a rear, exploded isometric view of the UV LED lamp head module of FIG. 14A.

圖14D為根據本發明之實施例的撓曲電路子系統及冷卻子系統的分解圖。 14D is an exploded view of a flex circuit subsystem and a cooling subsystem in accordance with an embodiment of the present invention.

圖15A為根據本發明之實施例的基台的俯視圖。 Figure 15A is a top plan view of a submount in accordance with an embodiment of the present invention.

圖15B為圖15A之基台的等角視圖。 Figure 15B is an isometric view of the base of Figure 15A.

圖15C為圖15A之基台的橫截面。 Figure 15C is a cross section of the base of Figure 15A.

圖15D為圖15A之區段D的放大圖。 Figure 15D is an enlarged view of section D of Figure 15A.

圖16A為圖14B之撓曲電路的俯視圖。 Figure 16A is a top plan view of the flex circuit of Figure 14B.

圖16B為圖14B之撓曲電路的等角分解圖。 Figure 16B is an isometric exploded view of the flex circuit of Figure 14B.

圖16C為說明根據本發明之實施例的一LED陣列及其與一基台及各個撓曲電路層之介接的放大正面剖視圖。 16C is an enlarged front cross-sectional view illustrating an LED array and its interface with a submount and respective flex circuit layers, in accordance with an embodiment of the present invention.

圖17A為根據本發明之實施例的裝配至撓曲電路及微通道冷卻器之LED陣列的等角視圖。 17A is an isometric view of an LED array assembled to a flex circuit and a microchannel cooler, in accordance with an embodiment of the present invention.

圖17B為圖17A之LED陣列的俯視圖。 Figure 17B is a top plan view of the LED array of Figure 17A.

圖17C為圖17A之區段A的放大圖,展示了用於圖17B之LED陣列的電串聯LED群組的線接合連接。 Figure 17C is an enlarged view of section A of Figure 17A showing the wire bond connections for the electrical series LED groups of the LED array of Figure 17B.

圖17D為圖17B之區段AA的另一放大圖,展示了該電串聯LED群組中之第一個LED。 Figure 17D is another enlarged view of section AA of Figure 17B showing the first of the electrically series LED groups.

圖17E為圖17B之區段AB的另一放大圖。 圖17F為圖17B之區段AC的另一放大圖。 Figure 17E is another enlarged view of section AB of Figure 17B. Figure 17F is another enlarged view of the section AC of Figure 17B.

圖18A概念上說明根據本發明之實施例的電串聯LED群組的電力路徑。 Figure 18A conceptually illustrates the power path of an electrical series LED group in accordance with an embodiment of the present invention.

圖18B為圖18A之電串聯LED群組的前4個LED的放大圖。 Figure 18B is an enlarged view of the first four LEDs of the electrical series LED group of Figure 18A.

圖18C為沿剖面線A截取的圖18A之電串聯LED群組的橫截面。 Figure 18C is a cross section of the electrical series LED group of Figure 18A taken along section line A.

圖18D概念上說明根據本發明之實施例的電串聯LED群組的電力路徑。 Figure 18D conceptually illustrates the power path of an electrical series LED group in accordance with an embodiment of the present invention.

圖19說明根據本發明之實施例的來自80 mm長之反射器的照射度圖案,該反射器產生了在反射器開口下方65 mm處聚焦的約25 mm寬之受照射區域。 Figure 19 illustrates an illumination pattern from an 80 mm long reflector that produces an illuminated area of approximately 25 mm width focused at 65 mm below the reflector opening, in accordance with an embodiment of the present invention.

圖20為說明根據本發明之實施例的針對5 mm、25 mm及50 mm間隙距離在工件表面上之各種照射度量變曲線的橫截面的曲線圖。 20 is a graph illustrating cross-sections of various illumination metric curves on a workpiece surface for 5 mm, 25 mm, and 50 mm gap distances, in accordance with an embodiment of the present invention.

201‧‧‧反射器 201‧‧‧ reflector

202‧‧‧外殼 202‧‧‧Shell

304a-b‧‧‧陰極匯流排條 304a-b‧‧‧cathode bus bar

305‧‧‧燈體 305‧‧‧Light body

306‧‧‧燈體 306‧‧‧Light body

310a-b‧‧‧LED驅動器PCB 310a-b‧‧‧LED driver PCB

311‧‧‧電感器 311‧‧‧Inductors

312‧‧‧FET 312‧‧‧FET

315a-b‧‧‧陽極匯流排體 315a-b‧‧‧Anode busbar body

317‧‧‧共同陽極基板層 317‧‧‧Common anode substrate layer

320a‧‧‧陰極爪 320a‧‧‧cathode claw

321a‧‧‧陰極爪 321a‧‧‧cathode claw

330‧‧‧LED陣列 330‧‧‧LED array

340‧‧‧窗 340‧‧‧ window

341‧‧‧窗座架 341‧‧‧Window frame

Claims (29)

一種燈頭模組,其包含:一發光裝置陣列,該陣列具有一高縱橫比,其中該陣列之一長度大於該陣列之一寬度,其中該等發光裝置緊密地間隔以產生一高填充因數且包括電串聯發光裝置之複數個群組,其中該複數個群組係電並聯連接的;一單片構造之基台,該基台包括複數個L形經圖案化電路材料層,其中該複數個L形經圖案化電路材料層中之每一者包括一臂部分及一支柱部分,其中該臂部分充當一發光裝置接合墊,且該支柱部分充當一線接合墊及一電路跡線;其中電串聯發光裝置之該複數個群組中之一電串聯發光裝置群組中的每一發光裝置固定至該基台之一相應臂部分;且其中該複數個支柱部分實質上位於藉由該陣列之該長度及該寬度界定之一區域之外、實質上平行於該陣列之該長度延伸,且共同地執行針對該電串聯發光裝置群組中之鄰近發光裝置之間的電流的一主要電流載運功能;及一多層撓曲電路,其包括一陽極層及一陰極層,該多層撓曲電路在其中形成有一矩形孔隙,該基台及該陣列位於該孔隙內;其中該多層撓曲電路之該陽極層電耦接至與該電串聯發光裝置群組中之第一個發光裝置相關聯的一發光裝置接合墊;且 其中該多層撓曲電路之該陰極層電耦接至與該電串聯發光裝置群組中之最後一個發光裝置相關聯的一電路跡線。 A lamp head module comprising: an array of light emitting devices having a high aspect ratio, wherein one of the arrays has a length greater than a width of the array, wherein the light emitting devices are closely spaced to produce a high fill factor and include a plurality of groups of electrically connected light-emitting devices, wherein the plurality of groups are electrically connected in parallel; a monolithically configured abutment comprising a plurality of L-shaped patterned circuit material layers, wherein the plurality of L Each of the patterned circuit material layers includes an arm portion and a pillar portion, wherein the arm portion functions as a light emitting device bonding pad, and the pillar portion functions as a wire bonding pad and a circuit trace; wherein the electrical series illumination Each of the plurality of electrically connected light-emitting device groups of the plurality of groups of devices is fixed to a respective one of the bases; and wherein the plurality of post portions are substantially located by the length of the array And extending beyond the one of the width definitions, substantially parallel to the length of the array, and collectively performing for the adjacent illumination package in the group of electrically connected light-emitting devices a primary current carrying function of the current between the two; and a multilayer flex circuit comprising an anode layer and a cathode layer, the multilayer flex circuit having a rectangular aperture formed therein, the base and the array being located in the aperture The anode layer of the multilayer flex circuit is electrically coupled to a light emitting device bonding pad associated with the first one of the electrical series light emitting devices; The cathode layer of the multilayer flex circuit is electrically coupled to a circuit trace associated with the last one of the group of electrically connected light emitting devices. 如請求項1之燈頭模組,其中按一互鎖配置在該基台上圖案化該複數個L形經圖案化電路材料層,在該互鎖配置中,該複數個L形經圖案化電路材料層中之鄰近L形經圖案化電路材料層的該等支柱部分位於該陣列之對置側上且實質上彼此平行地延伸。 The lamp cap module of claim 1, wherein the plurality of L-shaped patterned circuit material layers are patterned on the submount in an interlocking configuration, wherein the plurality of L-shaped patterned circuits are in the interlocking configuration The struts of adjacent layers of L-shaped patterned circuit material in the layer of material are located on opposite sides of the array and extend substantially parallel to each other. 如請求項1之燈頭模組,其中該複數個臂部分中之每一者併有一焊料障壁,該焊料障壁防止意欲將該電串聯發光裝置群組中之一發光裝置固定至該發光裝置接合墊的焊料散佈至該線接合墊及該電路跡線上。 The lamp cap module of claim 1, wherein each of the plurality of arm portions has a solder barrier, the solder barrier preventing from inadvertently fixing one of the electrically connected light-emitting device groups to the illuminating device bonding pad The solder is spread over the wire bond pads and the circuit traces. 如請求項1之燈頭模組,進一步包含具有一散熱頂面之一微通道冷卻器,其中該基台藉由一聚合物黏著劑或一金屬焊料而固定至該散熱頂面。 The lamp cap module of claim 1, further comprising a microchannel cooler having a heat dissipating top surface, wherein the submount is fixed to the heat dissipating top surface by a polymer adhesive or a metal solder. 如請求項1之燈頭模組,其中該高填充因數大於70%,如藉由將藉由該陣列之該長度及該寬度界定之一總區域除以該陣列之一發光表面區域再乘以100而測得的。 The lamp cap module of claim 1, wherein the high fill factor is greater than 70%, such as by dividing a total area defined by the length of the array and the width by a light emitting surface area of the array and multiplying by 100 And measured. 如請求項5之燈頭模組,其中該發光表面區域具有大於1瓦特每平方毫米之一光輸出功率密度。 The light head module of claim 5, wherein the light emitting surface area has a light output power density greater than one watt per square millimeter. 如請求項1之燈頭模組,進一步包含一單片構造之第二基台,其中電串聯發光裝置之該複數個群組中之一第二電串聯發光裝置群組藉由該第二基台電串聯地電連接,且其中該基台與該第二基台係電並聯地連接。 The lamp base module of claim 1, further comprising a second base in a single piece configuration, wherein one of the plurality of groups of the electrical series light-emitting devices is powered by the second base Electrically connected in series, and wherein the base is electrically connected in parallel with the second base. 如請求項1之燈頭模組,其中該等發光裝置中之至少一者為一發射紫外線之發光裝置。 The light head module of claim 1, wherein at least one of the light emitting devices is a light emitting device that emits ultraviolet light. 如請求項1之燈頭模組,其中該等發光裝置中之至少一者以紫外線光譜之外的一區發射。 The light head module of claim 1, wherein at least one of the light emitting devices emits in a region other than the ultraviolet spectrum. 如請求項1之燈頭模組,其中該等發光裝置中之兩者或兩者以上以不同之波長發射。 The cap module of claim 1, wherein two or more of the illuminating devices emit at different wavelengths. 一種燈頭模組,其包含:一發光裝置陣列,該陣列具有一高縱橫比,其中該陣列之一長度大於該陣列之一寬度;一多層撓曲電路,其包括一陽極層及一陰極層,該多層撓曲電路在其中形成有一矩形孔隙,充當用於該等發光裝置之一接合墊及一電路跡線兩者的該陣列及一基台位於該孔隙內;其中該多層撓曲電路之該陽極層電耦接至與該陣列內之一電串聯發光裝置群組中之第一個發光裝置相關聯的一發光裝置接合墊;且其中該多層撓曲電路之該陰極層電耦接至與該電串聯發光裝置群組中之最後一個發光裝置相關聯的一電路跡線;及一對光學巨型反射器,用以引導藉由該陣列發射之光子,該對光學巨型反射器經組態以在一工件之一表面上產生具有一頂帽量變曲線之一射束圖案。 A lamp head module comprising: an array of light emitting devices, the array having a high aspect ratio, wherein one of the arrays has a length greater than a width of the array; and a multilayer flex circuit comprising an anode layer and a cathode layer The multilayer flex circuit has a rectangular aperture formed therein, the array and a submount serving as both a bond pad and a circuit trace for the illumination devices being located within the aperture; wherein the multilayer flex circuit The anode layer is electrically coupled to a light emitting device bonding pad associated with a first one of the group of electrically series light emitting devices in the array; and wherein the cathode layer of the multilayer flex circuit is electrically coupled to a circuit trace associated with the last illumination device in the group of electrically connected light-emitting devices; and a pair of optical giant reflectors for directing photons emitted by the array, the pair of optical giant reflectors being configured A beam pattern having a cap variation curve is produced on a surface of one of the workpieces. 如請求項11之燈頭模組,其中該對光學巨型反射器形成一進口孔隙及一出口孔隙,其中該進口孔隙位於該陣列 之一發光表面附近,其中該出口孔隙位於該對光學巨型反射器之一遠端處,且其中該進口孔隙所具有之一區域與該發光表面之一區域的101%一樣大。 The lamp cap module of claim 11, wherein the pair of optical giant reflectors form an inlet aperture and an outlet aperture, wherein the inlet aperture is located in the array In the vicinity of one of the illuminating surfaces, wherein the exit aperture is located at a distal end of one of the pair of optical giant reflectors, and wherein the inlet aperture has a region that is as large as 101% of one of the regions of the illuminating surface. 如請求項11之燈頭模組,其中該對光學巨型反射器形成一進口孔隙及一出口孔隙,其中該進口孔隙位於該陣列之一發光表面附近,其中該出口孔隙位於該對光學巨型反射器之一遠端處,且其中該進口孔隙所具有之一區域與該發光表面之一區域的110%一樣大。 The lamp cap module of claim 11, wherein the pair of optical giant reflectors form an inlet aperture and an outlet aperture, wherein the inlet aperture is located adjacent one of the illumination surfaces of the array, wherein the exit aperture is located in the pair of optical giant reflectors At a distal end, and wherein the inlet aperture has a region that is as large as 110% of one of the regions of the illumination surface. 如請求項11之燈頭模組,其中該進口孔隙位於該發光表面上方且距該發光表面0微米至25微米。 The lamp cap module of claim 11, wherein the inlet aperture is above the illumination surface and is between 0 microns and 25 microns from the illumination surface. 如請求項11之燈頭模組,其中自該出口孔隙至該工件之該表面的一距離約為該進口孔隙與該出口孔隙之間的一距離的0.01至3倍。 The lamp cap module of claim 11, wherein a distance from the exit aperture to the surface of the workpiece is about 0.01 to 3 times a distance between the inlet aperture and the outlet aperture. 如請求項11之燈頭模組,其中該對光學巨型反射器中之每一光學巨型反射器之內表面具有不同經塑形的區段以形成不同的橢圓形輪廓。 The lamp head module of claim 11, wherein the inner surface of each of the pair of optical giant reflectors has different shaped segments to form a different elliptical profile. 如請求項11之燈頭模組,其中該頂帽量變曲線係不對稱的。 The lamp cap module of claim 11, wherein the top cap variable curve is asymmetrical. 如請求項11之燈頭模組,其中該發光裝置係以一串聯/並聯組態而電耦接。 The lamp head module of claim 11, wherein the lighting device is electrically coupled in a series/parallel configuration. 如請求項11之燈頭模組,其中該等發光裝置緊密地間隔以產生大於70%之一填充因數,如藉由將藉由該陣列之該長度及該寬度界定之一總區域除以該陣列之一發光表面區域再乘以100而測得。 The lamp head module of claim 11, wherein the illumination devices are closely spaced to produce a fill factor greater than 70%, such as by dividing the total area defined by the length of the array and the width by the array One of the illuminated surface areas is multiplied by 100 and measured. 如請求項11之燈頭模組,其中該等發光裝置中之至少一者為一發射紫外線之發光裝置。 The light head module of claim 11, wherein at least one of the light emitting devices is a light emitting device that emits ultraviolet light. 一種燈頭模組,其包含:一電源,其具有一陽極輸出連接及一陰極輸出連接;一發光裝置陣列,該陣列具有一發光表面,該陣列具有高亮度及一高縱橫比;一基台,該基台經組態以將該陣列中之複數個發光裝置電串聯地電耦接,該基台包括複數個發光裝置接合墊區域及複數個線接合區域;一燈體;一撓曲電路,該撓曲電路安裝至該燈體,該撓曲電路在其長度及高度方面具有一高縱橫比,該撓曲電路在其中形成有一定位孔隙,該基台安裝於該定位孔隙內,且該撓曲電路包含電極性相反之導電經圖案化層,該經圖案化層包括一陽極層及一陰極層;其中該撓曲電路之一第一末端暴露該陽極層之一第一部分以形成與該電源之該陽極輸出連接之一電連接,且暴露該陰極層之一第一部分以形成與該電源之該陰極輸出連接之一電連接;其中該撓曲電路之一第二末端暴露該陽極層之一第二部分,該第二部分電耦接至該基台之該複數個發光裝置接合墊區域中的與該複數個發光裝置中之第一個發光裝置相關聯的一發光裝置接合墊區域;且其中該撓曲電路之該第二末端暴露該陰極層之一第二 部分,該第二部分電耦接至該複數個線接合區域中的與該複數個發光裝置中之最後一個發光裝置相關聯的一線接合區域的一陰極部分。 A lamp head module comprising: a power source having an anode output connection and a cathode output connection; an array of light emitting devices, the array having a light emitting surface, the array having high brightness and a high aspect ratio; a base, The base station is configured to electrically couple the plurality of light emitting devices in the array electrically, the base station includes a plurality of light emitting device bond pad regions and a plurality of wire bonding regions; a lamp body; a flex circuit; The flex circuit is mounted to the lamp body, the flex circuit having a high aspect ratio in terms of its length and height, the flex circuit having a positioning aperture formed therein, the base being mounted in the positioning aperture, and the flexing The curved circuit comprises an electrically conductive patterned layer of opposite polarity, the patterned layer comprising an anode layer and a cathode layer; wherein a first end of the flex circuit exposes a first portion of the anode layer to form a power source One of the anode output connections is electrically connected and exposing a first portion of the cathode layer to form an electrical connection with one of the cathode output connections of the power source; wherein the flex circuit is one of the second ends Exposing a second portion of the anode layer, the second portion electrically coupled to the light emitting device in the plurality of light emitting device bond pad regions and associated with a first one of the plurality of light emitting devices a device bonding pad region; and wherein the second end of the flex circuit exposes one of the cathode layers And the second portion is electrically coupled to a cathode portion of the plurality of wire bonding regions that is associated with a last one of the plurality of light emitting devices. 如請求項21之燈頭模組,其中該高縱橫比係在約100:1至200:1之間。 The lamp head module of claim 21, wherein the high aspect ratio is between about 100:1 and 200:1. 如請求項22之燈頭模組,其中該高縱橫比為約150:1。 The lamp head module of claim 22, wherein the high aspect ratio is about 150:1. 如請求項21之燈頭模組,其中該撓曲電路繞著該燈體纏繞,使得該撓曲電路之該第一末端實質上處於垂直於含有該陣列之該發光表面之一平面的一平面中,且其中該撓曲電路之該第二末端實質上處於平行於該陣列之該發光表面的一平面中。 The lamp cap module of claim 21, wherein the flex circuit is wound around the lamp body such that the first end of the flex circuit is substantially perpendicular to a plane perpendicular to a plane of the light emitting surface of the array And wherein the second end of the flex circuit is substantially parallel to a plane of the light emitting surface of the array. 如請求項21之燈頭模組,進一步包含具有一頂面之一微通道冷卻器總成,該基台及該撓曲電路之該第二末端接合至該頂面。 The base module of claim 21, further comprising a microchannel cooler assembly having a top surface, the base and the second end of the flex circuit being coupled to the top surface. 如請求項21之燈頭模組,進一步包含一對光學巨型反射器,其固定至該撓曲電路用以引導藉由該陣列發射之光子。 The base module of claim 21, further comprising a pair of optical giant reflectors secured to the flex circuit for directing photons emitted by the array. 如請求項21之燈頭模組,其中該等發光裝置中之至少一者為一發射紫外線之發光裝置。 The light head module of claim 21, wherein at least one of the light emitting devices is a light emitting device that emits ultraviolet light. 一種燈頭模組,其包含:一發光裝置陣列,該陣列具有一高縱橫比,其中該陣列之一長度大於該陣列之一寬度,其中該等發光裝置緊密地間隔以產生一高填充因數且包括電串聯發光裝置之複數個群組,其中該複數個群組係電並聯連接的; 一多層撓曲電路,其包括一陽極層及一陰極層,該多層撓曲電路在其中形成有一矩形孔隙,充當用於該等發光裝置之一接合墊及一電路跡線兩者的該陣列及一基台位於該孔隙內;其中該多層撓曲電路之該陽極層電耦接至與該陣列內之一電串聯發光裝置群組中之第一個發光裝置相關聯的一發光裝置接合墊;且其中該多層撓曲電路之該陰極層電耦接至與該電串聯發光裝置群組中之最後一個發光裝置相關聯的一電路跡線;及一燈體,其具有一入口冷卻劑流動通道及一出口冷卻劑流動通道,其中該入口冷卻劑流動通道及該出口冷卻劑流動通道係藉由一間隔物分離,該間隔物具有實質上類似於該陣列之該寬度的一厚度。 A lamp head module comprising: an array of light emitting devices having a high aspect ratio, wherein one of the arrays has a length greater than a width of the array, wherein the light emitting devices are closely spaced to produce a high fill factor and include a plurality of groups of electrically connected series light-emitting devices, wherein the plurality of groups are electrically connected in parallel; A multilayer flex circuit comprising an anode layer and a cathode layer, the multilayer flex circuit having a rectangular aperture formed therein, serving as the array for both the bond pads and a circuit trace of the illumination devices And a submount is located in the aperture; wherein the anode layer of the multilayer flex circuit is electrically coupled to a light emitting device bonding pad associated with a first one of the group of electrically series light emitting devices in the array And wherein the cathode layer of the multilayer flex circuit is electrically coupled to a circuit trace associated with a last one of the group of electrically connected light emitting devices; and a lamp body having an inlet coolant flow a passage and an outlet coolant flow passage, wherein the inlet coolant flow passage and the outlet coolant flow passage are separated by a spacer having a thickness substantially similar to the width of the array. 如請求項28之燈頭模組,其中該厚度係在該陣列之該寬度的約10%內。 The lamp cap module of claim 28, wherein the thickness is within about 10% of the width of the array.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200530051A (en) * 2003-08-01 2005-09-16 Fuji Photo Film Co Ltd Light source unit
TW200634398A (en) * 2005-03-18 2006-10-01 Hon Hai Prec Ind Co Ltd Light-emitting module and light source
TWM354863U (en) * 2008-11-13 2009-04-11 Alder Optomechanical Corp LED module
US20100176404A1 (en) * 2008-03-25 2010-07-15 Lattice Power (Jiangxi) Corporation Method for fabricating high-power light-emitting diode arrays
US20100195306A1 (en) * 2009-02-03 2010-08-05 Rene Helbing Light emitting diode lamp with phosphor coated reflector
US20110188203A1 (en) * 2008-05-29 2011-08-04 Integration Technology Limited Plug in led array

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200530051A (en) * 2003-08-01 2005-09-16 Fuji Photo Film Co Ltd Light source unit
TW200634398A (en) * 2005-03-18 2006-10-01 Hon Hai Prec Ind Co Ltd Light-emitting module and light source
US20100176404A1 (en) * 2008-03-25 2010-07-15 Lattice Power (Jiangxi) Corporation Method for fabricating high-power light-emitting diode arrays
US20110188203A1 (en) * 2008-05-29 2011-08-04 Integration Technology Limited Plug in led array
TWM354863U (en) * 2008-11-13 2009-04-11 Alder Optomechanical Corp LED module
US20100195306A1 (en) * 2009-02-03 2010-08-05 Rene Helbing Light emitting diode lamp with phosphor coated reflector
TW201030283A (en) * 2009-02-03 2010-08-16 Bridgelux Inc Light emitting diode lamp with phosphor coated reflector

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