TWI569343B - Semiconductor device and temperature control method thereof and test system - Google Patents

Description

Semiconductor device and temperature control method thereof and test system

The present invention relates to a semiconductor device, a temperature control method thereof, and a test system.

In the production of products for semiconductor devices, it is often necessary to perform various functional tests at a plurality of different temperatures, such as 45 ° C, 85 ° C, 95 ° C, 105 ° C or 125 ° C. The prior art tests conditions for different temperatures often provide the required test temperature by adding test stations. However, this practice of adding test stations requires more room to accommodate the test machine and can significantly increase production costs and lengthen the test time when shipping products between test stations.

In view of this, the present invention provides a semiconductor device, a temperature control method thereof, and a test system, thereby solving the problems described in the prior art.

The invention provides a semiconductor device comprising at least one temperature control unit and at least one heating unit. The temperature control unit operates to react to an external control signal external to the semiconductor device. The heating unit is coupled to the temperature control unit. The temperature control unit controls the temperature of the heating unit in response to the first command signal of the external control signal to thereby increase the temperature from the first operating temperature to the second operating temperature.

In an embodiment of the invention, when the temperature control unit receives the second command signal from the external control signal, the temperature control unit controls the temperature of the heating unit in response to the second command signal, thereby obtaining the second operating temperature. Warm up to the third working temperature.

In an embodiment of the invention, the semiconductor device further includes a logic control unit. The logic control unit is coupled to the temperature control unit. The logic control unit transmits the first feedback signal when the second operating temperature is reached according to the feedback result of each temperature control unit, and may also transmit the second feedback signal when the third operating temperature is reached.

The present invention further provides a temperature control method for a semiconductor device, which includes the following steps. A test machine is provided to control the operation of the semiconductor device. The test machine transmits a first command signal to a temperature control unit of the semiconductor device. The temperature control unit controls the temperature of the heating unit of the semiconductor device in response to the first command signal to thereby increase the temperature from the first operating temperature to the second operating temperature.

The invention further provides a test system. The test system includes a test machine and a semiconductor device. The semiconductor device includes at least one temperature control unit and at least one heating unit. The temperature control unit is operative to react to the control of the test machine. The heating unit is coupled to the temperature control unit. The temperature control unit controls the temperature of the heating unit in response to the first command signal of the testing machine to thereby increase the temperature from the first operating temperature to the second operating temperature.

Based on the above, a heating unit is disposed in the semiconductor device of the present invention, and when testing a specific temperature, the temperature of the heating unit in the semiconductor device can be controlled to perform a function test at a specific temperature, thereby reducing the number of test stations and required Test space.

The above described features and advantages of the invention will be apparent from the following description.

The embodiments of the present invention will now be described in detail, and illustrated in the drawings. However, the inventive concept may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. In addition, elements/members that use the same reference numerals in the drawings and the embodiments represent the same or similar parts. In the drawings, the relative sizes of the various elements/components may be exaggerated for clarity.

1 is a schematic diagram of a test system in accordance with an embodiment of the present invention. 2 is a schematic illustration of test temperatures in accordance with an embodiment of the present invention. 3 is a flow chart of a test in accordance with an embodiment of the present invention. Please refer to Figure 1, Figure 2 and Figure 3. Test system 100A includes test machine 110 and semiconductor device 120. The semiconductor device 120 to be tested includes a temperature control unit 130 and heating units 140_1, 140_2. The test machine 110 is used to test various functions of the semiconductor device 120. The semiconductor device 120 can be a wafer or a package of an integrated circuit. The heating units 140_1, 140_2 are coupled to the temperature control unit 130. Please note that the invention does not limit the number of temperature control units or heating units.

In Figure 2. Assuming that the temperature F0 is room temperature, the temperature conditions tested may be the operating temperatures F1 and F2, or an additional operating temperature F3, or similarly increased to other operating temperatures. The test intervals A0 to A6 represent intervals between different time points. Please note that the operating temperature F3 is greater than The operating temperature is F2, and the operating temperature F2 is greater than the operating temperature F1.

In the test interval A0, the semiconductor device 120 is outside the test machine 110.

As shown in step S310, at time point T1, the entry into the test section A1 is started. The semiconductor device 120 is loaded into the test machine 110 and the heater of the test machine 110 itself begins to heat up. At the time point T2, it is indicated that the operating temperature F1 has been reached (for example, 85 ° C).

As shown in step S320, in the test section A2 (time point T2 to T3), the semiconductor device 120 is at the operating temperature F1, and the test machine 110 can perform various functional tests of the first stage on the semiconductor device 120.

As shown in step S330, at time point T3, the test machine 110 can transmit the enable signal ES1 to the semiconductor device 120 (or transmit an external control signal having the enable signal ES1 to the semiconductor device 120). At this time, the temperature control unit 130 of the semiconductor device 120 reacts to the control of the test machine 110 (or an external control signal), and controls the temperature of the heating units 140_1, 140_2 according to the enable signal ES1, so as to make the temperature of the semiconductor device 120 itself. The temperature is raised from the operating temperature F1 (for example, 85 ° C) to the operating temperature F2 (for example, 105 ° C).

In addition, the temperature control unit 130 may detect the temperature rising condition of the heating units 140_1 and 140_2, and transmit the feedback signal FBS1 to the testing machine 110 at the time point T4 when the operating temperature F2 is reached, so that the testing machine 110 knows the current semiconductor device 120. Average operating temperature.

As shown in step S340, in the test section A4 (time point T4 to T5), the semiconductor device 120 is at the operating temperature F2, and the test machine 110 can perform various functional tests of the second stage on the semiconductor device 120.

In still another embodiment, if the test machine 110 is to add another test condition of the operating temperature F3. As shown in step S350, at time point T5, the test machine 110 can transmit the enable signal ES2 to the semiconductor device 120 (or transmit an external control signal having the enable signal ES2 to the semiconductor device 120). At this time, the temperature control unit 130 of the semiconductor device 120 reacts to the control of the test machine 110 (or an external control signal), and controls the temperature of the heating units 140_1, 140_2 according to the enable signal ES2, so that the temperature of the semiconductor device 120 itself is The temperature is raised from the operating temperature F2 (for example, 105 ° C) to the operating temperature F3 (for example, 125 ° C).

Similarly, the temperature control unit 130 may detect the temperatures of the heating units 140_1 and 140_2, and at a time point T6 when the operating temperature F3 is reached, transmit the feedback signal FBS2 to the test machine 110. Then, as shown in step S360, in the test section A6 (time point T6 to T7), the semiconductor device 120 is at the operating temperature F3, and the test machine 110 can perform various functional tests of the third stage on the semiconductor device 120.

Further, in the test section A2 (time point T2 to T3), the test machine 110 can transmit a correction signal CS, and the temperature control unit 130 performs temperature correction of the operating temperature F1 on the semiconductor device 120 based on the correction signal CS. For example, the correction signal CS indicates that the test machine has warmed up to a temperature of 85 ° C, so the temperature control unit 130 needs to correct the temperature of the currently detected semiconductor device 120 to 85 ° C. Please note that the corrected temperature value of the present invention is not limited to the values recited in this embodiment.

In addition, the heating unit 140_1, 140_2 may be a circuit composed of a resistor, a metal wire or other power consuming components, and the temperature control unit 130 The current flow rate is used to control the temperature range of the heating units 140_1, 140_2.

4 is a schematic diagram of a test system in accordance with another embodiment of the present invention. Please refer to Figure 2 and Figure 4. Test system 100B includes test machine 110 and semiconductor device 120A. Test system 100B is similar to the architecture of test system 100A of FIG. The semiconductor device 120A includes a logic control unit 150, temperature control units 130A, 130B, heating units 140A_1, ..., 140A_n, and heating units 140B_1, ..., 140B_m. The heating and heating of the semiconductor device 120A can be more evenly averaged by using a plurality of heating cells.

The logic control unit 150 is coupled to the temperature control units 130A and 130B. The temperature control unit 130A can detect the temperature rising condition of the heating units 140A_1, . . . , 140A_n, and the temperature control unit 130B can detect the temperature rising condition of the heating units 140B_1, . . . , 140B_m, and the temperature control units 130A and 130B will detect the temperature. The feedback result is transmitted to the logic control unit 150.

In this embodiment, the feedback signal FBS1 or FBS2 can be transmitted to the test machine 110 through the logic control unit 150. The logic control unit 150 may include a circuit (not shown) of the gate, wherein each input terminal of the gate receives the feedback result of the temperature control unit 130A, 130B, and the output of the gate is used to output the feedback signal FBS1 or FBS2. Thus, the logic control unit 150 can transmit the feedback signal FBS1 to the test machine 110 when the operating temperature F2 is reached according to the feedback result of the temperature control units 130A and 130B. Moreover, the logic control unit 150 may transmit the feedback signal FBS2 to the test machine 110 when the operating temperature F3 is reached, so that the test machine 110 knows the current average operating temperature of the semiconductor device 120.

Based on the content disclosed in the above embodiments, a general purpose can be collected A method of temperature control of a semiconductor device. More specifically, FIG. 5 is a flow chart showing a temperature control method of a semiconductor device according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 5 together, the temperature control method of this embodiment may include the following steps.

As shown in step S510, the test machine 110 is provided to control the operation of the semiconductor device 120.

Next, as shown in step S520, the test machine 110 transmits the enable signal ES1 to the temperature control unit 130 of the semiconductor device 120.

Then, as shown in step S530, the temperature control unit 130 controls the temperature of the heating units 140_1, 140_2 of the semiconductor device 120 in response to the enable signal ES1 to thereby increase the temperature from the first operating temperature to the second operating temperature.

In still another exemplary embodiment, at step S540, the test machine 110 transmits the enable signal ES2 to the temperature control unit 130 of the semiconductor device 120. Then, as shown in step S550, the temperature control unit 130 controls the temperature of the heating units 140_1, 140_2 of the semiconductor device 120 in response to the enable signal ES2, thereby heating up from the second operating temperature to the third operating temperature.

Note that the third operating temperature (eg, 95 ° C) is greater than the second operating temperature (eg, 85 ° C) and the second operating temperature is greater than the first operating temperature (eg, 45 ° C).

In summary, the present invention configures at least one heating unit in the semiconductor device to be tested. When testing a specific temperature, the temperature can be controlled by the heating unit in the semiconductor device to perform a functional test at a specific temperature. Perform more than two temperature tests on the same test machine and effectively reduce the number of test stations and the required test space.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100A, 100B‧‧‧ test system

110‧‧‧Test machine

120, 120A‧‧‧ semiconductor devices

130, 130A, 130B‧‧‧ Temperature Control Unit

140_1, 140_2, 140A_1, 140A_n, 140B_1, 140B_m‧‧‧ heating unit

150‧‧‧Logical Control Unit

A0~A6‧‧‧ test interval

CS‧‧‧Correction signal

ES1, ES2‧‧‧ enable signal

FBS1, FBS2‧‧‧ feedback signal

F0‧‧‧ room temperature

F1, F2, F3‧‧‧ working temperature

S310~S360‧‧‧ steps of the test flow of an embodiment of the present invention

S510~S550‧‧‧ steps of a temperature control method for a semiconductor device according to an embodiment of the present invention

T1~T7‧‧‧ time point

The following drawings are a part of the specification of the invention, and illustrate the embodiments of the invention

1 is a schematic diagram of a test system in accordance with an embodiment of the present invention.

2 is a schematic illustration of test temperatures in accordance with an embodiment of the present invention.

3 is a flow chart of a test in accordance with an embodiment of the present invention.

4 is a schematic diagram of a test system in accordance with another embodiment of the present invention.

FIG. 5 is a flow chart of a temperature control method of a semiconductor device in accordance with an embodiment of the present invention.

100A‧‧‧Test System

110‧‧‧Test machine

120‧‧‧Semiconductor device

130‧‧‧Temperature Control Unit

140_1, 140_2‧‧‧ heating unit

CS‧‧‧Correction signal

ES1, ES2‧‧‧ enable signal

FBS1, FBS2‧‧‧ feedback signal

Claims (12)

A semiconductor device comprising: at least one temperature control unit for operating in response to an external control signal external to the semiconductor device; and at least one heating unit coupled to the temperature control unit; wherein the semiconductor device is an integrated circuit The wafer or the package, the temperature control unit controls the temperature of the heating unit in response to a first enable signal of the external control signal, thereby heating up from a first operating temperature to a second operating temperature. The semiconductor device of claim 1, wherein when the temperature control unit receives a second enable signal from the external control signal, the temperature control unit controls the second enable signal to control the The temperature of the heating unit is thereby increased from the second operating temperature to a third operating temperature. The semiconductor device of claim 2, further comprising: a logic control unit coupled to the temperature control unit, the logic control unit, according to a feedback result of each of the temperature control units, when the second operating temperature is reached A first feedback signal is transmitted. The semiconductor device of claim 3, wherein the logic control unit transmits a second feedback signal when the third operating temperature is reached according to a feedback result of each of the temperature control units. A temperature control method for a semiconductor device, comprising: providing a test machine to control operation of the semiconductor device, the semiconductor The body device is a wafer or package of the integrated circuit; the test machine transmits a first enable signal to a temperature control unit of the semiconductor device; and the temperature control unit controls the first enable signal to control the The temperature of a heating unit of the semiconductor device is thereby increased from a first operating temperature to a second operating temperature. The temperature control method of the semiconductor device of claim 5, further comprising: when the temperature control unit receives a second enable signal from the test machine, the temperature control unit reacts to the second The enabling signal controls the temperature of the heating unit to increase from the second operating temperature to a third operating temperature. The temperature control method of the semiconductor device of claim 5, wherein the semiconductor device transmits a first time when the temperature rises from the first operating temperature to the second operating temperature A feedback signal is sent to the test machine. The method of controlling a temperature of a semiconductor device according to claim 5, wherein the semiconductor device transmits a first time when the temperature rises from the second operating temperature to the third operating temperature The second feedback signal is sent to the test machine. A test system comprising: a test machine; and a semiconductor device, the semiconductor device being a wafer or package of an integrated circuit, comprising: At least one temperature control unit for operating in response to control of the test machine; and at least one heating unit coupled to the temperature control unit; wherein the temperature control unit is responsive to a first enablement of the test machine The temperature of the heating unit is controlled by a signal to increase the temperature from a first operating temperature to a second operating temperature. The test system of claim 9, wherein when the temperature control unit receives a second enable signal from the test machine, the temperature control unit controls the second enable signal to control the The temperature of the heating unit is thereby increased from the second operating temperature to a third operating temperature. The test system of claim 10, wherein the semiconductor device further comprises: a logic control unit coupled to the temperature control unit, wherein the logic control unit reaches the first level according to a feedback result of each of the temperature control units At the second operating temperature, a first feedback signal is transmitted to the test machine. The test system of claim 11, wherein the logic control unit transmits a second feedback signal to the test machine when the third operating temperature is reached according to the feedback result of each of the temperature control units.