CN103631283B - Semiconductor device and temperature-controlled process thereof and test macro - Google Patents
Semiconductor device and temperature-controlled process thereof and test macro Download PDFInfo
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- CN103631283B CN103631283B CN201210300101.1A CN201210300101A CN103631283B CN 103631283 B CN103631283 B CN 103631283B CN 201210300101 A CN201210300101 A CN 201210300101A CN 103631283 B CN103631283 B CN 103631283B
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Abstract
The invention discloses a kind of semiconductor device and temperature-controlled process thereof and test macro.Semiconductor device comprises at least one temperature control unit and at least one heating unit.Temperature control unit operates in order to react on external control signal.Temperature control unit reacts on the first enable signal of external control signal and controls the temperature of heating unit, is warming up to the second working temperature according to this from the first working temperature.The present invention reduces the quantity of testing station and the required test space.
Description
Technical field
The present invention relates to a kind of semiconductor device and temperature-controlled process thereof and test macro.
Background technology
In the process of product of producing semiconductor device, usually need to carry out various functions test in multiple different temperature, such as temperature conditions is 45 DEG C, 85 DEG C, 95 DEG C, 105 DEG C or 125 DEG C.Prior art, for the test condition of different temperatures, provides required probe temperature usually through increase testing station.But the way of this increase testing station needs larger space to carry out accommodating tester table, and can increase production cost significantly, and can elongate the test duration when transporting product between testing station.
Summary of the invention
In view of this, the object of the invention is to propose a kind of semiconductor device and temperature-controlled process thereof and test macro, use the problem solving prior art and address.
The present invention proposes a kind of semiconductor device, and it comprises at least one temperature control unit and at least one heating unit.Temperature control unit operates in order to react on an external control signal of semiconductor device outside.Heating unit couples temperature control unit.Temperature control unit reacts on the first command signal of external control signal and controls the temperature of heating unit, is warming up to the second working temperature according to this from the first working temperature.
In one embodiment of this invention, when temperature control unit receives the second command signal from external control signal, temperature control unit reacts on the second command signal and controls the temperature of heating unit, is warming up to the 3rd working temperature according to this from the second working temperature.
In one embodiment of this invention, semiconductor device also comprises logic control element.Logic control element couples temperature control unit.Logic control element, according to the feedback result of each temperature control unit, transmits the first feedback signal in time reaching the second working temperature, also can transmit the second feedback signal in time reaching the 3rd working temperature.
The present invention separately proposes a kind of temperature-controlled process of semiconductor device, and it comprises the following steps.There is provided tester table to control the running of semiconductor device.Tester table transmits the temperature control unit of the first command signal to semiconductor device.Temperature control unit reacts on the first command signal and controls the temperature of the heating unit of semiconductor device, is warming up to the second working temperature according to this from the first working temperature.
The present invention separately proposes a kind of test macro.Test macro comprises tester table and semiconductor device.Semiconductor device comprises at least one temperature control unit and at least one heating unit.Temperature control unit operates in order to react on the control of tester table.Heating unit couples temperature control unit.Temperature control unit reacts on the first command signal of tester table and controls the temperature of heating unit, is warming up to the second working temperature according to this from the first working temperature.
Beneficial effect of the present invention is, based on above-mentioned, heating unit is configured with in semiconductor device of the present invention, when testing specific temperature, the temperature of the heating unit in semiconductor device can be controlled, to carry out functional test in specific temperature, thus reduce the quantity of testing station and the required test space.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Accompanying drawing is below a part for instructions of the present invention, depicts example embodiment of the present invention, and accompanying drawing illustrates principle of the present invention together with the description of instructions.
Fig. 1 is the schematic diagram of the test macro according to one embodiment of the invention.
Fig. 2 is the schematic diagram of the probe temperature according to one embodiment of the invention.
Fig. 3 is the test flow chart according to one embodiment of the invention.
Fig. 4 is the schematic diagram of the test macro according to another embodiment of the present invention.
Fig. 5 is the process flow diagram of the temperature-controlled process of semiconductor device according to one embodiment of the invention.
Wherein, description of reference numerals is as follows:
100A, 100B: test macro
110: tester table
120,120A: semiconductor device
130,130A, 130B: temperature control unit
140_1,140_2,140A_1,140A_n, 140B_1,140B_m: heating unit
150: logic control element
A0 ~ A6: between test section
CS: correction signal
ES1, ES2: enable signal
FBS1, FBS2: feedback signal
F0: room temperature
F1, F2, F3: working temperature
S310 ~ S360: each step of the testing process of one embodiment of the invention
S510 ~ S550: each step of the temperature-controlled process of the semiconductor device of one embodiment of the invention
T1 ~ T7: time point
Embodiment
With detailed reference to embodiments of the invention, and described embodiment is described in the accompanying drawings.But concept of the present invention can embody in many different forms and should not be construed as limited to set forth embodiment herein.In addition, in drawings and the embodiments, use the element/component of identical label to represent identical or similar portions.
Fig. 1 is the schematic diagram of the test macro according to one embodiment of the invention.Fig. 2 is the schematic diagram of the probe temperature according to one embodiment of the invention.Fig. 3 is the test flow chart according to one embodiment of the invention.Please refer to Fig. 1, Fig. 2 and Fig. 3.Test macro 100A comprises tester table 110 and semiconductor device 120.Semiconductor device 120 to be tested comprises temperature control unit 130 and heating unit 140_1,140_2.Tester table 110 is in order to the various functions of measuring semiconductor device 120.And semiconductor device 120 can be chip or the packaging body of integrated circuit.Heating unit 140_1,140_2 couple temperature control unit 130.Note that the quantity of the present invention not limit temperature control module or heating unit.
In fig. 2, assumed temperature F0 is room temperature, and the temperature conditions of test can be working temperature F1 and F2, or increases by a working temperature F3 again, or increases other working temperature more similarly.And A0 to A6 represents the interval between different time points between test section.Note that working temperature F3 is greater than working temperature F2, and working temperature F2 is greater than working temperature F1.
A0 between test section, semiconductor device 120 is outside tester table 110.
As shown in step S310, at time point T1, start to enter A1 between test section.Semiconductor device 120 is written into tester table 110 and the well heater of tester table 110 itself starts to heat up.And represent at time point T2 reach working temperature F1(such as, 85 DEG C).
As shown in step S320, A2(time point T2 to T3 between test section), semiconductor device 120 is in working temperature F1, and tester table 110 can carry out the various functions test of first stage to semiconductor device 120.
As shown in step S330, at time point T3, tester table 110 can transmit enable signal ES1 to semiconductor device 120(or the external control signal with enable signal ES1 is sent to semiconductor device 120).Now, the temperature control unit 130 of semiconductor device 120 reacts on tester table 110(or external control signal) control, and the temperature of heating unit 140_1,140_2 is controlled according to enable signal ES1, make the self-temperature of semiconductor device 120 according to this from working temperature F1(such as, 85 DEG C) be warming up to working temperature F2(such as, 105 DEG C).
In addition, temperature control unit 130 can detect the intensification situation of heating unit 140_1 and 140_2, reach the time point T4 of working temperature F2, transmit feedback signal FBS1 to tester table 110, with the average operating temperature making tester table 110 learn current semiconductor device 120.
As shown in step S340, A4(time point T4 to T5 between test section), semiconductor device 120 is in working temperature F2, and tester table 110 can carry out the various functions test of subordinate phase to semiconductor device 120.
In another embodiment, if tester table 110 is for increasing the test condition of a working temperature F3 again.As shown in step S350, at time point T5, tester table 110 can transmit enable signal ES2 to semiconductor device 120(or the external control signal with enable signal ES2 is sent to semiconductor device 120).Now, the temperature control unit 130 of semiconductor device 120 reacts on tester table 110(or external control signal) control, and the temperature of heating unit 140_1,140_2 is controlled according to enable signal ES2, make the self-temperature of semiconductor device 120 according to this from working temperature F2(such as, 105 DEG C) be warming up to working temperature F3(such as, 125 DEG C).
Similarly, temperature control unit 130 can detect the temperature of heating unit 140_1 and 140_2, is reaching the time point T6 of working temperature F3, transmits feedback signal FBS2 to tester table 110.So as shown in step S360, A6(time point T6 to T7 between test section), semiconductor device 120 is in working temperature F3, and tester table 110 can carry out the various functions test of phase III to semiconductor device 120.
In addition, A2(time point T2 to T3 between test section), tester table 110 can transmit a correction signal CS, and temperature control unit 130 carries out the temperature correction of working temperature F1 to semiconductor device 120 according to correction signal CS.Such as, correction signal CS represents that tester table heats up and reaches temperature 85 DEG C, so temperature control unit 130 will need detect that the temperature synchronous correction of semiconductor device 120 is 85 DEG C at present.Note that Tc numerical value of the present invention is not limited with the numerical value cited by this embodiment.
In addition, the circuit that heating unit 140_1,140_2 can form for resistance, plain conductor or other consuming components, and temperature control unit 130 utilizes current flow to control the temperature range of heating unit 140_1,140_2.
Fig. 4 is the schematic diagram of the test macro according to another embodiment of the present invention.Refer to Fig. 2 and Fig. 4.Test macro 100B comprises tester table 110 and semiconductor device 120A.And test macro 100B is similar to the framework of the test macro 100A of Fig. 1.Semiconductor device 120A comprise logic control element 150, temperature control unit 130A, 130B, heating unit 140A_1 ..., 140A_n and heating unit 140B_1 ..., 140B_m.Use multiple heating unit that the intensification of semiconductor device 120A can be made to be heated more average.
Logic control element 150 couples temperature control unit 130A and 130B.Temperature control unit 130A can detect heating unit 140A_1 ..., 140A_n intensification situation, and temperature control unit 130B can detect heating unit 140B_1 ..., 140B_m intensification situation, and the feedback result of temperature detection is sent to logic control element 150 by temperature control unit 130A and 130B.
In this embodiment, feedback signal FBS1 or FBS2 can be sent to tester table 110 by logic control element 150.Logic control element 150 can comprise and the circuit of door (not illustrating), wherein receives the feedback result of temperature control unit 130A, 130B respectively with each input end of door, and with the output terminal of door in order to output feedback signal FBS1 or FBS2.So logic control element 150 according to the feedback result of temperature control unit 130A and 130B, can transmit feedback signal FBS1 to tester table 110 in time reaching working temperature F2.Further, logic control element 150 when reaching working temperature F3, can transmit feedback signal FBS2 to tester table 110, with the average operating temperature making tester table 110 learn current semiconductor device 120.
Based on the content that above-described embodiment discloses, can converge whole go out a kind of temperature-controlled process of general semiconductor device.Clearer, Fig. 5 illustrates the process flow diagram of the temperature-controlled process of the semiconductor device into one embodiment of the invention.Please refer to Fig. 1 and Fig. 5, the temperature-controlled process of the present embodiment can comprise the following steps.
As shown in step S510, provide tester table 110 to control the running of semiconductor device 120.
Then, as shown in step S520, tester table 110 transmits the temperature control unit 130 of enable signal ES1 to semiconductor device 120.
Then, as shown in step S530, temperature control unit 130 reacts on enable signal ES1 and controls the temperature of heating unit 140_1,140_2 of semiconductor device 120, is warming up to the second working temperature according to this from the first working temperature.
In a further exemplary embodiment, when step S540, tester table 110 transmits the temperature control unit 130 of enable signal ES2 to semiconductor device 120.Then, as shown in step S550, temperature control unit 130 reacts on enable signal ES2 and controls the temperature of heating unit 140_1,140_2 of semiconductor device 120, is warming up to the 3rd working temperature according to this from the second working temperature.
Note that the 3rd working temperature (such as, 95 DEG C) is greater than the second working temperature (such as, 85 DEG C), and the second working temperature is greater than the first working temperature (such as, 45 DEG C).
In sum, the present invention is configured with at least one heating unit in semiconductor device to be tested, when testing specific temperature, by the heating unit control temperature in semiconductor device, to carry out functional test in specific temperature, thus two or more temperature tests can be carried out at same tester table, and effectively reduce the quantity of testing station and the required test space.
Although the present invention discloses as above with embodiment; so itself and be not used to limit the present invention, any the technical staff in the technical field, without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (12)
1. a semiconductor device, is characterized in that, described semiconductor device comprises:
At least one temperature control unit, operates in order to react on an external control signal of described semiconductor device outside; And
At least one heating unit, couples described temperature control unit;
Wherein, described temperature control unit reacts on one first enable signal of described external control signal and by described heating unit control temperature, makes described semiconductor device be warming up to one second working temperature from one first working temperature according to this.
2. semiconductor device as claimed in claim 1, it is characterized in that, when described temperature control unit receives second enable signal from described external control signal, described temperature control unit reacts on described second enable signal and by described heating unit control temperature, makes described semiconductor device be warming up to one the 3rd working temperature from described second working temperature according to this.
3. semiconductor device as claimed in claim 2, it is characterized in that, described semiconductor device also comprises:
One logic control element, couples described temperature control unit, and described logic control element, according to the feedback result of temperature control unit described in each, transmits one first feedback signal in time reaching described second working temperature.
4. semiconductor device as claimed in claim 3, is characterized in that, described logic control element, according to the feedback result of temperature control unit described in each, transmits one second feedback signal in time reaching described 3rd working temperature.
5. a temperature-controlled process for semiconductor device, is characterized in that, described temperature-controlled process comprises step:
There is provided a tester table to control the running of described semiconductor device;
Described tester table transmits the temperature control unit of one first enable signal to described semiconductor device; And
Described temperature control unit reacts on described first enable signal and by a heating unit control temperature of described semiconductor device, makes described semiconductor device be warming up to one second working temperature from one first working temperature according to this.
6. the temperature-controlled process of semiconductor device as claimed in claim 5, it is characterized in that, described temperature-controlled process also comprises step:
When described temperature control unit receives second enable signal from described tester table, described temperature control unit reacts on described second enable signal and by described heating unit control temperature, makes described semiconductor device be warming up to one the 3rd working temperature from described second working temperature according to this.
7. the temperature-controlled process of semiconductor device as claimed in claim 5, it is characterized in that, be warming up in the process of described second working temperature from described first working temperature, described semiconductor device transmits one first feedback signal to described tester table in time reaching described second working temperature.
8. the temperature-controlled process of semiconductor device as claimed in claim 5, it is characterized in that, be warming up in the process of described 3rd working temperature from described second working temperature, described semiconductor device transmits one second feedback signal to described tester table in time reaching described 3rd working temperature.
9. a test macro, is characterized in that, described test macro comprises:
One tester table; And
Semiconductor device, comprising:
At least one temperature control unit, operates in order to react on the control of described tester table; And
At least one heating unit, couples described temperature control unit;
Wherein, described temperature control unit reacts on one first enable signal of described tester table and by described heating unit control temperature, makes described semiconductor device be warming up to one second working temperature from one first working temperature according to this.
10. test macro as claimed in claim 9, it is characterized in that, when described temperature control unit receives second enable signal from described tester table, described temperature control unit reacts on described second enable signal and by described heating unit control temperature, makes described semiconductor device be warming up to one the 3rd working temperature from described second working temperature according to this.
11. test macros as claimed in claim 10, it is characterized in that, described semiconductor device also comprises:
One logic control element, couples described temperature control unit, and described logic control element, according to the feedback result of temperature control unit described in each, transmits one first feedback signal to described tester table in time reaching described second working temperature.
12. test macros as claimed in claim 11, is characterized in that, described logic control element, according to the feedback result of temperature control unit described in each, transmits one second feedback signal to described tester table in time reaching described 3rd working temperature.
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| CN201210300101.1A CN103631283B (en) | 2012-08-22 | 2012-08-22 | Semiconductor device and temperature-controlled process thereof and test macro |
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| CN201210300101.1A CN103631283B (en) | 2012-08-22 | 2012-08-22 | Semiconductor device and temperature-controlled process thereof and test macro |
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| CN103631283B true CN103631283B (en) | 2015-10-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104777854A (en) * | 2015-04-16 | 2015-07-15 | 福州瑞芯微电子有限公司 | Temperature control method for semiconductor device |
| CN108010856B (en) * | 2016-10-31 | 2020-07-28 | 中芯国际集成电路制造(上海)有限公司 | Test machine |
| CN109144123A (en) * | 2018-08-15 | 2019-01-04 | 王晓勇 | A kind of semiconductor test temperature control equipment and control method |
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| CN1916795A (en) * | 2006-09-11 | 2007-02-21 | 中国科学院上海技术物理研究所 | Automatic control system and method for cyclic test in multiple service positions and at high and low temperatures |
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| CN102393765A (en) * | 2011-10-26 | 2012-03-28 | 迈普通信技术股份有限公司 | Temperature protection design method and temperature protection test method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6633726B2 (en) * | 1999-07-27 | 2003-10-14 | Kenneth A. Bradenbaugh | Method of controlling the temperature of water in a water heater |
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| EP1107093A2 (en) * | 1999-12-09 | 2001-06-13 | Tektronix, Inc. | Thermal control for a test and measurement instrument |
| CN1916795A (en) * | 2006-09-11 | 2007-02-21 | 中国科学院上海技术物理研究所 | Automatic control system and method for cyclic test in multiple service positions and at high and low temperatures |
| CN101377686A (en) * | 2007-08-31 | 2009-03-04 | 沈阳芯源微电子设备有限公司 | Intelligent heat tray temperature controller and temperature control method thereof |
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