TWI566873B - Method for forming transparent substrate with trench and method for forming device substrate - Google Patents
Method for forming transparent substrate with trench and method for forming device substrate Download PDFInfo
- Publication number
- TWI566873B TWI566873B TW103133104A TW103133104A TWI566873B TW I566873 B TWI566873 B TW I566873B TW 103133104 A TW103133104 A TW 103133104A TW 103133104 A TW103133104 A TW 103133104A TW I566873 B TWI566873 B TW I566873B
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- transparent substrate
- forming
- conductive layer
- transparent
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Description
本發明係關於一種形成具有溝槽之透明基材的方法以及形成元件基板的方法，尤指一種使用雷射加工之形成具有溝槽之透明基材的方法以及形成元件基板的方法。 The present invention relates to a method of forming a transparent substrate having a trench and a method of forming an element substrate, and more particularly to a method of forming a transparent substrate having a trench using laser processing and a method of forming an element substrate.
傳統於透明基材的表面形成溝槽的方式係使用應用半導體科技之微影製程與蝕刻製程。於此傳統方式中，基材表面會先塗佈光阻，然後透過曝光與顯影製程將光阻圖案化，使得所形成的光阻圖案可暴露出部分透明基材，且暴露出的部分具有所欲形成溝槽的圖案。接著，透過施以蝕刻液或通入蝕刻氣體可對暴露出的透明基材蝕刻，進而形成所欲的溝槽。最後再將光阻圖案移除。然而，使用傳統微影與蝕刻製程對透明基材蝕刻時容易產生非等向性蝕刻問題，例如：蝕刻液會對光阻圖案下方的透明基材蝕刻，因而造成懸凸的問題，或者由於整片透明基材需通入蝕刻液或蝕刻氣體，因此實際所欲形成溝槽的面積與蝕刻液/蝕刻氣體所碰到整片基材的面積的比例過大，造成蝕刻液/蝕刻氣體的浪費。 A conventional method of forming trenches on the surface of a transparent substrate is to use a lithography process and an etching process using semiconductor technology. In this conventional manner, the surface of the substrate is coated with a photoresist, and then the photoresist is patterned through an exposure and development process, so that the formed photoresist pattern can expose a portion of the transparent substrate, and the exposed portion has a portion To form a pattern of grooves. Then, the exposed transparent substrate can be etched by applying an etching solution or an etching gas to form a desired trench. Finally, the photoresist pattern is removed. However, the use of conventional lithography and etching processes is prone to anisotropic etching problems when etching transparent substrates. For example, the etching solution etches the transparent substrate under the photoresist pattern, thereby causing a problem of overhanging, or The transparent substrate needs to pass an etching solution or an etching gas. Therefore, the ratio of the area where the groove is actually formed and the area of the entire substrate to which the etching liquid/etching gas is applied is excessively large, resulting in waste of the etching liquid/etching gas.
本發明之主要目的在於提供一種形成具有溝槽之透明基材的方法以及形成元件基板的方法，以解決上述習知之問題。 SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of forming a transparent substrate having a trench and a method of forming an element substrate to solve the above-mentioned problems.
為達上述之目的，本發明提供一種形成具有溝槽之透明基材的方法。首先，提供一透明基材，且透明基材上形成有一透明導電層。然後，利 用一雷射裝置產生一雷射光，並將雷射光照射透明基材與透明導電層，以於透明基材與透明導電層相接觸之一第一表面形成具有至少一上視圖案之至少一溝槽，並移除溝槽正上方之透明導電層，其中雷射光之功率小於8瓦。 To achieve the above objects, the present invention provides a method of forming a transparent substrate having grooves. First, a transparent substrate is provided, and a transparent conductive layer is formed on the transparent substrate. Then, Lee Generating a laser beam by a laser device, and irradiating the transparent substrate with the transparent conductive layer to form at least one groove having at least one top view pattern on a first surface of the transparent substrate in contact with the transparent conductive layer The trenches are removed and the transparent conductive layer directly above the trench is removed, wherein the power of the laser light is less than 8 watts.
於本發明之方法中，由於透明基材上形成有透明導電層，因此雷射光可藉由透明導電層的聚焦與吸收在低功率的情況下蝕刻透明基材，以有效地降低雷射光的功率，並蝕刻出一定深度之溝槽。 In the method of the present invention, since a transparent conductive layer is formed on the transparent substrate, the laser light can etch the transparent substrate at a low power by focusing and absorbing the transparent conductive layer to effectively reduce the power of the laser light. And etch a groove of a certain depth.
102‧‧‧透明基材 102‧‧‧Transparent substrate
102a‧‧‧第一表面 102a‧‧‧ first surface
102b‧‧‧第二表面 102b‧‧‧second surface
104、202‧‧‧透明導電層 104, 202‧‧‧ Transparent conductive layer
106‧‧‧傳送機台 106‧‧‧Transporting machine
108‧‧‧雷射裝置 108‧‧‧ Laser device
108a‧‧‧雷射光 108a‧‧‧Laser light
110‧‧‧溝槽 110‧‧‧ trench
110a‧‧‧上視圖案 110a‧‧‧Upper pattern
112‧‧‧支撐柱 112‧‧‧Support column
114‧‧‧滾輪 114‧‧‧Roller
116‧‧‧移動裝置 116‧‧‧Mobile devices
118‧‧‧控制裝置 118‧‧‧Control device
202a‧‧‧第一部分 202a‧‧‧Part 1
202b‧‧‧第二部分 202b‧‧‧Part II
204‧‧‧第一溝槽 204‧‧‧First trench
206‧‧‧第二溝槽 206‧‧‧Second trench
300、350、400‧‧‧元件基板 300, 350, 400‧‧‧ element substrate
302、352‧‧‧高分子材料層 302, 352‧‧‧ polymer material layer
402‧‧‧對向基板 402‧‧‧ opposite substrate
第1圖至第4圖為本發明第一實施例之形成具有溝槽之透明基材的方法示意圖。 1 to 4 are schematic views showing a method of forming a transparent substrate having a groove according to a first embodiment of the present invention.
第5圖為本發明第一實施例之溝槽的上視圖案示意圖。 Fig. 5 is a top plan view showing the groove of the first embodiment of the present invention.
第6圖為本發明第二實施例之形成具有溝槽之透明基材的方法示意圖。 Figure 6 is a schematic view showing a method of forming a transparent substrate having a groove according to a second embodiment of the present invention.
第7圖為本發明第三實施例之形成具有溝槽之透明基材的方法示意圖。 Figure 7 is a schematic view showing a method of forming a transparent substrate having a groove according to a third embodiment of the present invention.
第8圖為本發明第四實施例之形成元件基板的方法示意圖。 Figure 8 is a schematic view showing a method of forming an element substrate according to a fourth embodiment of the present invention.
第9圖為本發明第五實施例之形成元件基板的方法示意圖。 Figure 9 is a schematic view showing a method of forming an element substrate according to a fifth embodiment of the present invention.
第10圖為本發明第六實施例之形成元件基板的方法示意圖。 Figure 10 is a schematic view showing a method of forming an element substrate according to a sixth embodiment of the present invention.
請參考第1圖至第5圖，第1圖至第4圖為本發明第一實施例之形成具有溝槽之透明基材的方法示意圖，且第5圖為本發明第一實施例之溝槽的上視圖案示意圖。如第1圖所示，首先，提供一透明基材102，且透明基材102上形成有一透明導電層104。於本實施例中，透明基材102具有彼此相對之一第一表面102a與一第二表面102b，且透明導電層104形成於透明基材102之第一表面102a上。透明基材102可包括玻璃、高分子材料、氮化矽、石英或藍寶石等可使用雷射加工的基材，其中高分子材料可包括壓克力、樹脂、光阻或聚乙醯胺(PI)，但不以此為限。透明導電層104可透過濺鍍的方 式形成於透明基材102的第一表面102a上，因此與透明基材102之第一表面102a相貼合。形成透明導電層104的材料可包括氧化銦錫(ITO)、氧化銦鋅(IZO)或氧化銦鎵鋅(IGZO)。 Please refer to FIG. 1 to FIG. 5 . FIG. 1 to FIG. 4 are schematic diagrams showing a method for forming a transparent substrate having a groove according to a first embodiment of the present invention, and FIG. 5 is a groove according to the first embodiment of the present invention. Schematic diagram of the top view of the groove. As shown in FIG. 1, first, a transparent substrate 102 is provided, and a transparent conductive layer 104 is formed on the transparent substrate 102. In the present embodiment, the transparent substrate 102 has a first surface 102a and a second surface 102b opposite to each other, and the transparent conductive layer 104 is formed on the first surface 102a of the transparent substrate 102. The transparent substrate 102 may comprise a laser-processable substrate such as glass, polymer material, tantalum nitride, quartz or sapphire, wherein the polymer material may include acrylic, resin, photoresist or polyethylamine (PI). ), but not limited to this. Transparent conductive layer 104 can be transmitted through the sputtering side The film is formed on the first surface 102a of the transparent substrate 102, and thus conforms to the first surface 102a of the transparent substrate 102. The material forming the transparent conductive layer 104 may include indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO).
如第2圖與第3圖所示，然後，將透明基材102設置於一傳送機台106上。接著，進行雷射加工，利用一雷射裝置108產生一雷射光108a，並將雷射光108a照射透明基材102與透明導電層104，以於透明基材102與透明導電層104相接觸之第一表面102a形成具有至少一上視圖案110a之至少一溝槽110，並移除溝槽110正上方之透明導電層104。於本實施例中，透明基材102可具有複數個溝槽110，且各溝槽110具有一上視圖案110a，但不以此為限。 As shown in FIGS. 2 and 3, the transparent substrate 102 is then placed on a conveyor table 106. Then, laser processing is performed to generate a laser light 108a by using a laser device 108, and the laser light 108a is irradiated onto the transparent substrate 102 and the transparent conductive layer 104 to contact the transparent substrate 102 and the transparent conductive layer 104. A surface 102a forms at least one trench 110 having at least one top view pattern 110a and removes the transparent conductive layer 104 directly above the trench 110. In this embodiment, the transparent substrate 102 may have a plurality of trenches 110, and each of the trenches 110 has a top view pattern 110a, but is not limited thereto.
進一步來說，傳送機台106可包含有複數個滾輪114以及複數個支撐柱112，其中滾輪114用以傳送透明基材102，且支撐柱112用以在透明基材102傳送至預定位置時將透明基材102向上支撐，使得透明基材102離開滾輪114，且可被固定，以進一步進行雷射加工的步驟。雷射裝置108設置於滾輪114與支撐柱112的上方，使支撐柱112在欲對透明基材102進行雷射加工之前可先將透明基材102朝雷射裝置108移動，例如：移動至雷射裝置108的聚焦範圍內。並且，雷射裝置108可被固定於一移動裝置116上，且移動裝置116可電性連接至一控制裝置118，並透過控制裝置118控制移動裝置116的位置，進而控制雷射裝置108的位置。例如：控制裝置118可包含有電腦程式，用以控制雷射裝置108的位置與移動速度，例如：200釐米/秒，使得所形成的上視圖案110a與所需的圖案相同。雷射裝置108可為光纖雷射，例如：二極體激發摻鐿雷射(diode-pumped Yetterbium laser)，且雷射裝置108所產生之雷射光108a之波長為1064奈米至1075奈米，但不限於此。 Further, the conveyor table 106 can include a plurality of rollers 114 and a plurality of support columns 112, wherein the rollers 114 are used to transport the transparent substrate 102, and the support posts 112 are used when the transparent substrate 102 is transferred to a predetermined position. The transparent substrate 102 is supported upwardly such that the transparent substrate 102 leaves the roller 114 and can be fixed for further laser processing steps. The laser device 108 is disposed above the roller 114 and the support post 112, so that the support post 112 can move the transparent substrate 102 toward the laser device 108 before performing laser processing on the transparent substrate 102, for example, moving to a mine Within the focus range of the firing device 108. Moreover, the laser device 108 can be fixed to a mobile device 116, and the mobile device 116 can be electrically connected to a control device 118, and the position of the mobile device 116 can be controlled by the control device 118, thereby controlling the position of the laser device 108. . For example, the control device 118 can include a computer program for controlling the position and movement speed of the laser device 108, for example, 200 cm/sec, such that the formed top view pattern 110a is the same as the desired pattern. The laser device 108 can be a fiber laser, such as a diode-pumped Yetterbium laser, and the laser light 108a generated by the laser device 108 has a wavelength of 1064 nm to 1075 nm. But it is not limited to this.
於本實施例中，透明基材102未形成有透明導電層104之第二表面102b係鄰近傳送機台106的滾輪114，使得設置有透明導電層104之第一表面102a鄰近雷射裝置108。藉此，雷射光108a從雷射裝置108射出之後會 先遇到透明導電層104，且可直接透過透明導電層104的聚焦而照射於透明基材102上並可透過透明導電層104的吸收，以蝕刻透明基材102以及其正上方的透明導電層104。相較於習知利用雷射光照射金屬表面以汽化的方式來蝕刻相鄰透明基材的方法，由於金屬並無法聚焦光線，僅利用雷射光汽化金屬來蝕刻透明基材，所以金屬的厚度並無法提升或者是控制溝槽的蝕刻深度。但本實施例於雷射裝置108與透明基材102之間設置透明導電層104可聚焦雷射光108a，有效降低能量的損耗，且降低雷射光108a的蝕刻作業所需功率。此外，習知利用雷射光照射金屬表面藉以汽化的方式來蝕刻相鄰透明基材的方法，雷射裝置與金屬必須分別置於透明基材的不同側才能施行蝕刻作業，而本發明之雷射裝置108與透明導電層104位於透明基材102之同側或是異側皆可施行蝕刻作業。 In the present embodiment, the transparent substrate 102 is not formed with the second surface 102b of the transparent conductive layer 104 adjacent to the roller 114 of the conveyor table 106 such that the first surface 102a provided with the transparent conductive layer 104 is adjacent to the laser device 108. Thereby, the laser light 108a will be emitted from the laser device 108. The transparent conductive layer 104 is first encountered, and can be directly irradiated onto the transparent substrate 102 by the focusing of the transparent conductive layer 104 and can be absorbed by the transparent conductive layer 104 to etch the transparent substrate 102 and the transparent conductive layer directly above it. 104. Compared with the conventional method of irradiating a metal surface with a laser light to vaporize an adjacent transparent substrate, since the metal cannot focus the light, only the laser light is vaporized to etch the transparent substrate, so the thickness of the metal cannot be Lift or control the etch depth of the trench. However, in this embodiment, the transparent conductive layer 104 is disposed between the laser device 108 and the transparent substrate 102 to focus the laser light 108a, thereby effectively reducing energy loss and reducing the power required for the etching operation of the laser light 108a. In addition, it is conventional to irradiate a metal surface with laser light to vaporize a method of etching an adjacent transparent substrate. The laser device and the metal must be respectively placed on different sides of the transparent substrate to perform an etching operation, and the laser of the present invention. The device 108 and the transparent conductive layer 104 may be etched on the same side or on the opposite side of the transparent substrate 102.
值得一提的是，當雷射光108a之功率過小，例如小於8瓦，且直接照射於透明基材102上時，透明基材102並不會被雷射光108a所蝕刻，且無法形成溝槽110，因此需將雷射光108a之功率提高到可蝕刻透明基材102的大小。儘管雷射光108a提高到一定功率以上可蝕刻透明基材102，但會有一定的能量因穿過透明基材102而消耗，因此本實施例之方法藉由透明導電層104的聚焦與吸收，雷射光108a可在低功率的情況下蝕刻透明基材102，進而可有效地降低雷射光108a的功率。於本實施例中，雷射光108a之功率可小於8瓦。較佳地，雷射光108a之功率可介於3瓦與6瓦之間，且在此功率範圍內，可達到溝槽110之深度與透明導電層104之厚度之比例介於6比1與15比1之間。由此可知，本實施例之方法不僅可降低雷射光108a的功率，還可蝕刻出具有一定深度之溝槽110。 It is worth mentioning that when the power of the laser light 108a is too small, for example, less than 8 watts, and is directly irradiated onto the transparent substrate 102, the transparent substrate 102 is not etched by the laser light 108a, and the trench 110 cannot be formed. Therefore, the power of the laser light 108a needs to be increased to the size of the etchable transparent substrate 102. Although the transparent substrate 102 can be etched by increasing the laser light 108a to a certain power, a certain amount of energy is consumed by passing through the transparent substrate 102. Therefore, the method of the embodiment is focused and absorbed by the transparent conductive layer 104. The illuminating light 108a can etch the transparent substrate 102 at a low power, thereby effectively reducing the power of the laser light 108a. In this embodiment, the power of the laser light 108a can be less than 8 watts. Preferably, the power of the laser light 108a can be between 3 watts and 6 watts, and within this power range, the ratio of the depth of the trench 110 to the thickness of the transparent conductive layer 104 is between 6 and 1 and 15 Between 1 and 1. It can be seen that the method of the embodiment can not only reduce the power of the laser light 108a, but also etch the trench 110 having a certain depth.
值得注意的是，由於透明導電層104之厚度越大，透明導電層104可吸收雷射光108a之能量越高，因此在蝕刻條件相同的情況下，所蝕刻出之溝槽110之深度可越深。舉例來說，如表1所示，在雷射光108a之功率為3.88瓦，波長為1064奈米，聚焦點的大小約略為40±10%微米的條件下，透明導 電層104之厚度為1350埃時所形成溝槽110之深度(1.019微米)大於透明導電層104之厚度為1200埃時所形成溝槽110之深度(0.975微米)。 It should be noted that the greater the thickness of the transparent conductive layer 104, the higher the energy of the transparent conductive layer 104 to absorb the laser light 108a. Therefore, the depth of the etched trench 110 can be deeper under the same etching conditions. . For example, as shown in Table 1, under the condition that the power of the laser light 108a is 3.88 watts, the wavelength is 1064 nm, and the size of the focus point is approximately 40 ± 10% micrometer, the transparent guide The depth of the trench 110 formed by the thickness of the electrical layer 104 at 1,350 angstroms (1.019 micrometers) is greater than the depth (0.975 micrometers) of the trench 110 formed when the thickness of the transparent conductive layer 104 is 1200 angstroms.
本發明剩餘之透明導電層可視後續製程需求再決定是否移除。於 本實施例中，如第4圖所示，於形成溝槽110之後，可選擇性移除剩餘之透明導電層104。至此已完成本實施例之具有溝槽110之透明基材102。於其他實施例中，剩餘之透明導電層可作為其他用途，例如：作為彩色濾光片基板之共通電極層，因此於形成溝槽之後可不需移除剩餘之透明導電層。 The remaining transparent conductive layer of the present invention can be determined whether to remove it according to the subsequent process requirements. to In this embodiment, as shown in FIG. 4, after the trench 110 is formed, the remaining transparent conductive layer 104 can be selectively removed. The transparent substrate 102 having the trenches 110 of this embodiment has been completed so far. In other embodiments, the remaining transparent conductive layer can be used for other purposes, for example, as a common electrode layer of the color filter substrate, so that the remaining transparent conductive layer need not be removed after the trench is formed.
值得注意的是，本實施例之溝槽110係透過雷射加工的方式形 成，因此並不會產生非等向性蝕刻問題以及浪費蝕刻液/蝕刻氣體的問題。於本實施例之透明基材102中，由於透明基材102之各溝槽110具有上視圖案110a，因此透明基材102可透過上視圖案110a來標示其批號、藉由上視圖案110a來進行對位或透過上視圖案110a來記錄所需要的資訊，但不限於此。舉例來說，如第5圖所示，上視圖案110a可分別為對位標記，例如：十字標記，批號，例如：字母或數字，與二維條碼。於其他實施例中，溝槽之上視圖案可包括對位標記、批號與二維條碼之其中至少一者。 It should be noted that the trench 110 of the embodiment is formed by laser processing. Therefore, there is no problem of anisotropic etching and waste of etching liquid/etching gas. In the transparent substrate 102 of the present embodiment, since each of the trenches 110 of the transparent substrate 102 has the top view pattern 110a, the transparent substrate 102 can be marked with the batch number 110a to indicate its batch number, by the top view pattern 110a. The information required for recording or recording through the top view pattern 110a is performed, but is not limited thereto. For example, as shown in FIG. 5, the top view pattern 110a may be an alignment mark, for example, a cross mark, a lot number, for example, a letter or a number, and a two-dimensional bar code. In other embodiments, the groove top view pattern can include at least one of a registration mark, a lot number, and a two-dimensional bar code.
本發明之形成具有溝槽之透明基材之方法並不以上述實施例為限。下文將繼續揭示本發明之其它實施例，然為了簡化說明並突顯各實施例之間的差異，下文中使用相同標號標注相同元件，並不再對重覆部分作贅述。 The method of forming a transparent substrate having a groove of the present invention is not limited to the above embodiment. The other embodiments of the present invention will be further described below, and the same reference numerals will be used to refer to the same elements, and the repeated parts will not be described again.
請參考第6圖，第6圖為本發明第二實施例之形成具有溝槽之透明基材的方法示意圖。如第6圖所示，相較於第一實施例，本實施例於將透 明基材102設置於傳送機台106上之步驟中係將透明基材102形成有透明導電層104之第一表面102a係鄰近傳送機台106的滾輪114設置，因此透明基材102之第二表面102b鄰近雷射裝置108。藉此，在照射雷射光108a之步驟中，雷射光108a會先經過透明基材102之第二表面102b，然後照射至設置有透明導電層104之第一表面102a。於本實施例中，由於透明導電層104會吸收雷射光108a，且透明導電層104與透明基材102相接觸，因此與吸收有雷射光108a之透明導電層104相接觸的透明基材102會被蝕刻，進而於透明基材102之第一表面102a形成溝槽110。本實施例所提供之透明基材102以及於形成溝槽110之後之步驟係與第一實施例相同，因此在此不多贅述。 Please refer to FIG. 6. FIG. 6 is a schematic view showing a method of forming a transparent substrate having a groove according to a second embodiment of the present invention. As shown in FIG. 6, compared with the first embodiment, the embodiment will be transparent. The step of disposing the substrate 102 on the conveyor table 106 is such that the first surface 102a of the transparent substrate 102 formed with the transparent conductive layer 104 is disposed adjacent to the roller 114 of the conveyor table 106, and thus the second surface of the transparent substrate 102 102b is adjacent to the laser device 108. Thereby, in the step of irradiating the laser light 108a, the laser light 108a passes through the second surface 102b of the transparent substrate 102 and then irradiates to the first surface 102a provided with the transparent conductive layer 104. In this embodiment, since the transparent conductive layer 104 absorbs the laser light 108a and the transparent conductive layer 104 is in contact with the transparent substrate 102, the transparent substrate 102 in contact with the transparent conductive layer 104 absorbing the laser light 108a will The trench 110 is formed by etching on the first surface 102a of the transparent substrate 102. The transparent substrate 102 provided in this embodiment and the steps after forming the trench 110 are the same as those in the first embodiment, and therefore will not be further described herein.
請參考第7圖，第7圖為本發明第三實施例之形成具有溝槽之透 明基材的方法示意圖。如第7圖所示，相較於第一實施例，本實施例形成於透明基材102上之透明導電層202具有一第一部分202a與一第二部分202b，且第一部分202a之厚度大於第二部分202b之厚度。本實施例於形成至少一溝槽之步驟可包括利用雷射光照射第一部分202a與第二部分202b，以於對應第一部分202a之第一表面102a形成至少一第一溝槽204，以及於第二部分202b之第一表面102a形成至少一第二溝槽206。由於第一部分202a之厚度大於第二部分202b之厚度，因此第一溝槽204之深度係大於第二溝槽206之深度。第一溝槽204之上視圖案可相同或不同於第二溝槽206之上視圖案，並依實際需求來決定。本實施例將透明基材102設置於傳送機台106上之步驟可與第一實施例或第二實施例相同，且移除剩餘之透明導電層202之步驟係與第一實施例相同，因此在此不多贅述。於其他實施例中，剩餘之透明導電層亦可作為其他用途，例如：作為彩色濾光片基板之共通電極層，因此於形成溝槽之後可不需移除剩餘之透明導電層。 Please refer to FIG. 7 , which is a perspective view of a third embodiment of the present invention. A schematic diagram of the method of the substrate. As shown in FIG. 7, the transparent conductive layer 202 formed on the transparent substrate 102 of the present embodiment has a first portion 202a and a second portion 202b, and the thickness of the first portion 202a is greater than that of the first embodiment. The thickness of the two parts 202b. The step of forming at least one trench in this embodiment may include illuminating the first portion 202a and the second portion 202b with laser light to form at least one first trench 204 corresponding to the first surface 102a of the corresponding first portion 202a, and second The first surface 102a of the portion 202b forms at least one second trench 206. Since the thickness of the first portion 202a is greater than the thickness of the second portion 202b, the depth of the first trench 204 is greater than the depth of the second trench 206. The top pattern of the first trench 204 may be the same or different from the top pattern of the second trench 206 and is determined according to actual needs. The step of disposing the transparent substrate 102 on the conveyor table 106 in this embodiment may be the same as the first embodiment or the second embodiment, and the steps of removing the remaining transparent conductive layer 202 are the same as in the first embodiment, I won't go into details here. In other embodiments, the remaining transparent conductive layer can also be used for other purposes, for example, as a common electrode layer of the color filter substrate, so that the remaining transparent conductive layer need not be removed after the trench is formed.
本發明的透明基材可進一步用於形成元件基板。請參考第8圖，第8圖為本發明第四實施例之形成元件基板的方法示意圖。如第8圖所示，相較於第一實施例，本實施例形成元件基板300的方法係於移除剩餘透明導 電層104之後，於溝槽110內填入高分子材料層302。於本實施例中，高分子材料層302可包括間隙物或彩色濾光層。當高分子材料層302為間隙物或彩色濾光層裝飾材料時，元件基板300可為彩色濾光片基板或薄膜電晶體基板，但本發明並不以此為限。此時，溝槽110的各上視圖案可與各畫素的開口相同。於其他實施例中，高分子材料層302亦可為裝飾材料，且元件基板為裝飾基板，因此當與顯示面板結合時，裝飾基板與顯示面板之間的間距可被縮減，甚至彼此相貼合，進而降低結合後之面板的厚度。 The transparent substrate of the present invention can be further used to form an element substrate. Please refer to FIG. 8. FIG. 8 is a schematic view showing a method of forming an element substrate according to a fourth embodiment of the present invention. As shown in FIG. 8, the method of forming the element substrate 300 in this embodiment is to remove the remaining transparent guide as compared with the first embodiment. After the electric layer 104, the polymer material layer 302 is filled in the trench 110. In this embodiment, the polymer material layer 302 may include a spacer or a color filter layer. When the polymer material layer 302 is a spacer or a color filter layer decorative material, the element substrate 300 may be a color filter substrate or a thin film transistor substrate, but the invention is not limited thereto. At this time, each of the top view patterns of the trenches 110 may be the same as the openings of the respective pixels. In other embodiments, the polymer material layer 302 can also be a decorative material, and the component substrate is a decorative substrate. Therefore, when combined with the display panel, the spacing between the decorative substrate and the display panel can be reduced or even adhered to each other. , thereby reducing the thickness of the combined panel.
請參考第9圖，第9圖為本發明第五實施例之形成元件基板的方 法示意圖。如第9圖所示，相較於上述第四實施例，本實施例形成元件基板350的方法於形成溝槽110之後並未移除剩餘之透明導電層104，且於形成溝槽110之後，於溝槽110內填入高分子材料層352。 Please refer to FIG. 9. FIG. 9 is a diagram showing a component substrate formed by a fifth embodiment of the present invention. Schematic diagram. As shown in FIG. 9 , the method of forming the device substrate 350 in the present embodiment does not remove the remaining transparent conductive layer 104 after the trench 110 is formed, and after the trench 110 is formed, compared to the fourth embodiment. A polymer material layer 352 is filled in the trench 110.
請參考第10圖，第10圖為本發明第六實施例之形成元件基板的 方法示意圖。如第10圖所示，相較於上述第四實施例，本實施利形成元件基板400的方法更包括於填入高分子材料層302之後，藉由上視圖案110a進行對位，以將透明基材102與一對向基板402接合。也就是說，本實施例之方法進一步將第四實施例之元件基板300與對向基板402接合。值得一提的是，由於高分子材料層302係填入溝槽110內，因此當透明基材102的第一表面102a與對向基板402接合時，可有效縮減透明基材102與相接合之對向基板402之間的間距。較佳地，當高分子材料層302並未延伸至溝槽110外時，透明基材102之第一表面102a甚至可與對向基板402相貼合。舉例來說，當彩色濾光片填入溝槽110內時，具有彩色濾光片之透明基材102可為彩色濾光片基板，且當與薄膜電晶體基板相接合時，兩者之間的間距可被縮小，進而可降低顯示面板的厚度。於其他實施例中，形成元件基板的方法亦可將未移除剩餘之透明導電層之第五實施例之元件基板與對向基板貼合。 Please refer to FIG. 10, which is a diagram of forming a component substrate according to a sixth embodiment of the present invention. Method schematic. As shown in FIG. 10, compared with the fourth embodiment, the method for forming the device substrate 400 in the present embodiment further includes: after filling the polymer material layer 302, the alignment is performed by the top view pattern 110a to be transparent. The substrate 102 is bonded to the pair of substrates 402. That is, the method of the present embodiment further bonds the element substrate 300 of the fourth embodiment to the opposite substrate 402. It is worth mentioning that since the polymer material layer 302 is filled in the trench 110, when the first surface 102a of the transparent substrate 102 is bonded to the opposite substrate 402, the transparent substrate 102 can be effectively reduced. The spacing between the opposing substrates 402. Preferably, when the polymer material layer 302 does not extend outside the trench 110, the first surface 102a of the transparent substrate 102 may even be bonded to the opposite substrate 402. For example, when the color filter is filled in the trench 110, the transparent substrate 102 having the color filter may be a color filter substrate, and when bonded to the thin film transistor substrate, between the two The pitch can be reduced, which in turn reduces the thickness of the display panel. In other embodiments, the method of forming the device substrate may also bond the component substrate of the fifth embodiment in which the remaining transparent conductive layer is not removed to the opposite substrate.
綜上所述，於本發明之方法中，由於透明基材上形成有透明導電層，因此雷射光可藉由透明導電層的聚焦與吸收在低功率的情況下蝕刻透明 基材，以有效地降低雷射光的功率，並蝕刻出一定深度之溝槽。 In summary, in the method of the present invention, since a transparent conductive layer is formed on the transparent substrate, the laser light can be transparently etched at a low power by focusing and absorbing the transparent conductive layer. The substrate is used to effectively reduce the power of the laser light and etch a groove of a certain depth.
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
102‧‧‧透明基材 102‧‧‧Transparent substrate
102a‧‧‧第一表面 102a‧‧‧ first surface
102b‧‧‧第二表面 102b‧‧‧second surface
104‧‧‧透明導電層 104‧‧‧Transparent conductive layer
106‧‧‧傳送機台 106‧‧‧Transporting machine
108‧‧‧雷射裝置 108‧‧‧ Laser device
108a‧‧‧雷射光 108a‧‧‧Laser light
112‧‧‧支撐柱 112‧‧‧Support column
114‧‧‧滾輪 114‧‧‧Roller
116‧‧‧移動裝置 116‧‧‧Mobile devices
118‧‧‧控制裝置 118‧‧‧Control device
Claims (13)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103133104A TWI566873B (en) | 2014-09-24 | 2014-09-24 | Method for forming transparent substrate with trench and method for forming device substrate |
| CN201410717599.0A CN104409329B (en) | 2014-09-24 | 2014-12-01 | Method for forming transparent base material with groove and method for forming element substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103133104A TWI566873B (en) | 2014-09-24 | 2014-09-24 | Method for forming transparent substrate with trench and method for forming device substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201611937A TW201611937A (en) | 2016-04-01 |
| TWI566873B true TWI566873B (en) | 2017-01-21 |
Family
ID=52646946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103133104A TWI566873B (en) | 2014-09-24 | 2014-09-24 | Method for forming transparent substrate with trench and method for forming device substrate |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104409329B (en) |
| TW (1) | TWI566873B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107168019A (en) * | 2017-07-03 | 2017-09-15 | 京东方科技集团股份有限公司 | A kind of developing apparatus and lithographic equipment |
| CN109302839B (en) * | 2018-11-21 | 2020-10-16 | 业成科技（成都）有限公司 | Structure and method for rapidly detecting assembly precision |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6300594B1 (en) * | 1998-02-19 | 2001-10-09 | Ricoh Microelectronics Company, Ltd. | Method and apparatus for machining an electrically conductive film |
| CN202114400U (en) * | 2011-04-27 | 2012-01-18 | 瑞世达科技(厦门)有限公司 | Laser stepper |
| TW201216799A (en) * | 2010-10-14 | 2012-04-16 | Young Fast Optoelectronics Co | Manufacturing method of touch sensor pattern and signal conductor |
| US20120169664A1 (en) * | 2009-08-11 | 2012-07-05 | David Charles Milne | Capacitive touch panels |
| TW201232606A (en) * | 2011-01-31 | 2012-08-01 | Gallant Prec Machining Co | Multilayer thin-films substrate processing method and processing apparatus thereof |
| TW201314855A (en) * | 2011-09-18 | 2013-04-01 | Tpk Touch Systems Xiamen Inc | Method for producing conductive circuits and touch screen |
| TW201314520A (en) * | 2011-09-27 | 2013-04-01 | Zhang Jin Fa | Wiring structure of touch panel and manufacturing method therefor |
| TW201319885A (en) * | 2011-11-09 | 2013-05-16 | Tpk Touch Solutions Xiamen Inc | Touch panel, touch electrode structure of touch panel, and method for manufacturing thereof |
| CN103310903A (en) * | 2012-03-08 | 2013-09-18 | 深圳欧菲光科技股份有限公司 | Ito film etching method |
| TW201349259A (en) * | 2012-05-22 | 2013-12-01 | Teco Nanotech Co Ltd | High resolution laser etching method for processing transparent conductive oxide layers of touch panel |
| TW201434567A (en) * | 2013-03-08 | 2014-09-16 | Univ Minghsin Sci & Tech | Laser etching device and etching method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746027B (en) * | 2013-12-11 | 2015-12-09 | 西安交通大学 | A kind of method at the superfine electric isolution groove of ITO conductive film surface etch |
-
2014
- 2014-09-24 TW TW103133104A patent/TWI566873B/en active
- 2014-12-01 CN CN201410717599.0A patent/CN104409329B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6300594B1 (en) * | 1998-02-19 | 2001-10-09 | Ricoh Microelectronics Company, Ltd. | Method and apparatus for machining an electrically conductive film |
| US20120169664A1 (en) * | 2009-08-11 | 2012-07-05 | David Charles Milne | Capacitive touch panels |
| TW201216799A (en) * | 2010-10-14 | 2012-04-16 | Young Fast Optoelectronics Co | Manufacturing method of touch sensor pattern and signal conductor |
| TW201232606A (en) * | 2011-01-31 | 2012-08-01 | Gallant Prec Machining Co | Multilayer thin-films substrate processing method and processing apparatus thereof |
| CN202114400U (en) * | 2011-04-27 | 2012-01-18 | 瑞世达科技(厦门)有限公司 | Laser stepper |
| TW201314855A (en) * | 2011-09-18 | 2013-04-01 | Tpk Touch Systems Xiamen Inc | Method for producing conductive circuits and touch screen |
| TW201314520A (en) * | 2011-09-27 | 2013-04-01 | Zhang Jin Fa | Wiring structure of touch panel and manufacturing method therefor |
| TW201319885A (en) * | 2011-11-09 | 2013-05-16 | Tpk Touch Solutions Xiamen Inc | Touch panel, touch electrode structure of touch panel, and method for manufacturing thereof |
| CN103310903A (en) * | 2012-03-08 | 2013-09-18 | 深圳欧菲光科技股份有限公司 | Ito film etching method |
| TW201349259A (en) * | 2012-05-22 | 2013-12-01 | Teco Nanotech Co Ltd | High resolution laser etching method for processing transparent conductive oxide layers of touch panel |
| TW201434567A (en) * | 2013-03-08 | 2014-09-16 | Univ Minghsin Sci & Tech | Laser etching device and etching method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104409329A (en) | 2015-03-11 |
| CN104409329B (en) | 2017-04-12 |
| TW201611937A (en) | 2016-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9962793B2 (en) | Method for producing deposition mask | |
| KR101499651B1 (en) | Method and apparatus for febrication of thin film transistor array substrate | |
| JP5857051B2 (en) | Self-aligned coating of opaque conductive regions | |
| US8709955B2 (en) | Pattern transfer apparatus and method for fabricating semiconductor device | |
| TWI566873B (en) | Method for forming transparent substrate with trench and method for forming device substrate | |
| TW200937504A (en) | Method for patterning crystalline indium tin oxide by using femtosecond laser | |
| US10031414B2 (en) | Template, method of manufacturing the same, and imprint method | |
| TW201133547A (en) | Method for patterning substrate and method for manufacturing capacitive touch panel | |
| CN104317451A (en) | Method for manufacturing touch display device | |
| KR101083320B1 (en) | Curing system and method thereof | |
| KR101172791B1 (en) | Laser lift-off method and laser lift-off apparatus | |
| KR101997073B1 (en) | Thin-film transistor substrate and method of manufacturing the same | |
| KR20030004534A (en) | Etching Method of Transparent Electrode on Touchscreen using Laser | |
| JP2011154080A (en) | Method for forming patterns on both faces of transparent substrate | |
| TW201017762A (en) | Method for patterning crystalline indium tim oxide | |
| RU2481608C1 (en) | Method of making liquid-crystal panel, glass substrate for liquid crystal panel and liquid crystal panel having glass substrate | |
| US20150370161A1 (en) | Device and method for nano-imprint lithography | |
| JP2007219191A (en) | Method for manufacturing substrate for liquid crystal display | |
| TW201616553A (en) | Step-and-repeat-type imprinting device and method | |
| JP2009128462A (en) | Method of manufacturing substrate for display panel | |
| JPWO2015182558A1 (en) | Manufacturing method of glass substrate and electronic device | |
| CN104765247A (en) | Making method of submicron grating | |
| CN110783253B (en) | Manufacturing method of display substrate, display substrate and display device | |
| KR20130106676A (en) | Method for manufacturing a fine metal electrode | |
| US11018328B2 (en) | Method and apparatus for manufacturing display substrate |