TWI566870B - Laser processing method and laser processing object - Google Patents

Laser processing method and laser processing object Download PDF

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TWI566870B
TWI566870B TW103133942A TW103133942A TWI566870B TW I566870 B TWI566870 B TW I566870B TW 103133942 A TW103133942 A TW 103133942A TW 103133942 A TW103133942 A TW 103133942A TW I566870 B TWI566870 B TW I566870B
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laser
laser light
light
processing method
substrate
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TW201611932A (en
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羅志偉
曾勝陽
曾雅欣
朱慧心
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國立交通大學
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雷射加工方法及雷射加工物 Laser processing method and laser processing object

本發明是有關於一種加工方法及加工物,且特別是有關於一種雷射加工方法及雷射加工物。 The present invention relates to a processing method and a processed article, and more particularly to a laser processing method and a laser processed article.

在許多先進材料加工製程與精密加工製程中,傳統加工技術已不敷需求,而需借重雷射加工技術,才能因應製程之所需。傳統連續波雷射加工技術主要是利用熱效應來對目標加工物(如基板)進行加工,如切割、鑽孔或表面改質等。圖1是習知的一種雷射切割(laser cutting)的示意圖,其中圖1的上半部及下半部分別繪示基板切割前後。請參照圖1,在現有技術中,雷射光B由基板SUB的單側入射基板SUB,且匯聚於聚焦處X,其中聚焦處X及其上的區域A1會被雷射光B的高溫移除,而聚焦處X以下的區域A2會因熱效應所產生的熱應力而斷裂。因此,藉由將雷射光B沿一預設路線R平移,即可將基板SUB切割成兩半。 In many advanced material processing processes and precision machining processes, traditional processing techniques are no longer sufficient, and laser processing technology is required to meet the needs of the process. Traditional continuous wave laser processing technology mainly uses thermal effects to process target workpieces (such as substrates), such as cutting, drilling or surface modification. 1 is a schematic view of a conventional laser cutting, in which the upper and lower halves of FIG. 1 are shown before and after cutting of the substrate, respectively. Referring to FIG. 1, in the prior art, the laser light B is incident on the substrate SUB from one side of the substrate SUB, and is concentrated at the focus X, wherein the focus portion X and the area A1 thereon are removed by the high temperature of the laser light B. The area A2 below the focus X is broken by the thermal stress generated by the thermal effect. Therefore, the substrate SUB can be cut into two halves by translating the laser light B along a predetermined path R.

對於等向性(isotropic)基板而言,由於熱應力會朝熱源(如聚焦處X)的四周擴散,因此因熱應力(thermal stress)所產生之斷裂 面SA容易產生毛邊。為提升基板SUB之加工面(例如包括斷裂面SA以及雷射光移除面SC)的平整性,一般需藉由後續製程去除斷裂面SA之毛邊,然而,此將增加製程步驟及時間。另一方面,由於熱應力極容易受到環境溫度的影響。當環境溫度控制不當時,基板SUB容易導熱不均,使得斷裂面SA與原本設定之斷裂面SB產生偏差,而降低加工之精密度。此外,在雷射光B單側入射基板SUB的情況下,雷射光B於基板SUB中的聚焦深度需足以確保基板SUB能夠斷裂。然而,因雷射光B匯聚於基板SUB中會在基板SUB縱向上產生一錐度,而不利於精細元件的微加工處理。因此,如何改善雷射加工時的精密度、速度及加工後的元件品質實為研發人員亟欲解決的問題之一。 For an isotropic substrate, the thermal stress causes a thermal stress to break around the heat source (such as the focus X), resulting in a thermal stress. The surface SA is prone to burrs. In order to improve the flatness of the processed surface of the substrate SUB (for example, including the fracture surface SA and the laser light removal surface SC), it is generally necessary to remove the burrs of the fracture surface SA by a subsequent process, however, this will increase the process steps and time. On the other hand, thermal stress is extremely susceptible to environmental temperature. When the ambient temperature is not properly controlled, the substrate SUB is easily thermally uneven, so that the fracture surface SA deviates from the originally set fracture surface SB, and the precision of the processing is lowered. Further, in the case where the laser light B is incident on the substrate SUB on one side, the depth of focus of the laser light B in the substrate SUB is required to be sufficient to ensure that the substrate SUB can be broken. However, since the laser light B converges in the substrate SUB, a taper is generated in the longitudinal direction of the substrate SUB, which is disadvantageous for the micromachining process of the fine elements. Therefore, how to improve the precision, speed and component quality of laser processing is one of the problems that researchers are trying to solve.

本發明提供一種雷射加工方法,其可改善雷射加工時的精密度及速度。 The present invention provides a laser processing method that can improve the precision and speed of laser processing.

本發明另提供一種雷射加工物,其具有良好的元件品質。 The invention further provides a laser processed article having good component quality.

本發明的一種雷射加工方法包括以下步驟:提供基板,其中基板具有第一面以及與第一面相對的第二面;以第一雷射光照射第一面,且以第二雷射光照射第二面,其中第一雷射光與第二雷射光的傳遞方向在基板的法線方向上的分量為相反。 A laser processing method of the present invention includes the steps of: providing a substrate, wherein the substrate has a first surface and a second surface opposite to the first surface; the first surface is illuminated by the first laser light, and the second laser light is irradiated The two sides, wherein the direction of transmission of the first laser light and the second laser light is opposite in the normal direction of the substrate.

在本發明的一實施例中,上述的第一雷射光以及第二雷射光是源自於一雷射光源或分別源自於多個雷射光源。 In an embodiment of the invention, the first laser light and the second laser light are derived from a laser light source or are respectively derived from a plurality of laser light sources.

在本發明的一實施例中,上述的第一雷射光以及第二雷射光分別為連續波。 In an embodiment of the invention, the first laser light and the second laser light are continuous waves, respectively.

在本發明的一實施例中,上述的第一雷射光以及第二雷射光分別為脈衝同調光,且第一雷射光以及第二雷射光到達基板的時間差不為0。 In an embodiment of the invention, the first laser light and the second laser light are respectively pulsed and dimmed, and the time difference between the first laser light and the second laser light reaching the substrate is not zero.

在本發明的一實施例中,上述的第一雷射光以及第二雷射光分別為脈衝同調光,且第一雷射光以及第二雷射光到達基板的時間差為0。 In an embodiment of the invention, the first laser light and the second laser light are respectively pulsed and dimmed, and the time difference between the first laser light and the second laser light reaching the substrate is zero.

在本發明的一實施例中,上述的第一雷射光沿第一方向照射第一面,其中第一方向與第一面以及第二面的夾角分別介於0度至180度之間。 In an embodiment of the invention, the first laser light illuminates the first surface along the first direction, wherein the angle between the first direction and the first surface and the second surface is between 0 degrees and 180 degrees, respectively.

在本發明的一實施例中,上述的第一方向與第一面以及第二面的夾角分別為90度。 In an embodiment of the invention, the angle between the first direction and the first surface and the second surface is 90 degrees.

在本發明的一實施例中,上述的第一雷射光聚焦於第一面或基板中,第二雷射光聚焦於第二面或基板中。 In an embodiment of the invention, the first laser light is focused on the first surface or the substrate, and the second laser light is focused on the second surface or the substrate.

在本發明的一實施例中,上述的第一雷射光聚焦於第一面的上方,第二雷射光聚焦於第二面的下方。 In an embodiment of the invention, the first laser light is focused above the first surface, and the second laser light is focused below the second surface.

在本發明的一實施例中,上述的第一雷射光沿第一方向照射第一面,且第一雷射光與第二雷射光在與第一方向垂直的第二方向上的距離小於或等於基板的厚度。 In an embodiment of the invention, the first laser light illuminates the first surface in the first direction, and the distance between the first laser light and the second laser light in the second direction perpendicular to the first direction is less than or equal to The thickness of the substrate.

在本發明的一實施例中,上述的第一雷射光與第二雷射光在第二方向上的距離等於0。 In an embodiment of the invention, the distance between the first laser light and the second laser light in the second direction is equal to zero.

在本發明的一實施例中,上述的第一雷射光沿第一方向照射第一面,且第一雷射光與第二雷射光在與第一方向垂直的第二方向上的距離大於基板的厚度。 In an embodiment of the invention, the first laser light illuminates the first surface in the first direction, and the distance between the first laser light and the second laser light in the second direction perpendicular to the first direction is greater than the substrate thickness.

本發明的一種雷射加工物,其經由雷射切割而形成雷射切割面。雷射切割面包括條狀的第一雷射作用區、條狀的第二雷射作用區以及條狀的非雷射作用區,其中第一雷射作用區與第二雷射作用區分別位於非雷射作用區的相對兩側。當光束傳遞至第一雷射作用區或第二雷射作用區時會被漫反射,且當光束傳遞至非雷射作用區時會被鏡面反射。 A laser processed article of the present invention is formed by laser cutting to form a laser cut surface. The laser cutting surface comprises a strip-shaped first laser action area, a strip-shaped second laser action area and a strip-shaped non-laser action area, wherein the first laser action area and the second laser action area are respectively located The opposite sides of the non-laser action zone. When the beam is transmitted to the first laser action zone or the second laser action zone, it is diffusely reflected and is specularly reflected when the beam is transmitted to the non-laser zone.

在本發明的一實施例中,上述的雷射加工物的材料是無機非金屬材料。 In an embodiment of the invention, the material of the laser processed material is an inorganic non-metal material.

在本發明的一實施例中,上述的雷射加工物的材料是透明材料,且非雷射作用區的光穿透率高於第一雷射作用區以及第二雷射作用區的光穿透率。 In an embodiment of the invention, the material of the laser processed object is a transparent material, and the light transmittance of the non-laser action region is higher than that of the first laser action region and the second laser action region. Transmittance.

在本發明的一實施例中,上述的雷射加工物的材料是非透明材料。 In an embodiment of the invention, the material of the laser processed article is a non-transparent material.

在本發明的一實施例中,上述的雷射切割面是平面、曲面或多折面。 In an embodiment of the invention, the laser cutting surface is a flat surface, a curved surface or a multi-fold surface.

基於上述,本發明上述的實施例利用雙雷射光分別於基板的對向側進行加工,以改善雷射加工時的精密度及速度,並使加工後的雷射加工物具有良好的元件品質。 Based on the above, the above-described embodiment of the present invention uses dual laser light to process the opposite sides of the substrate to improve the precision and speed during laser processing, and to provide the laser processed article with good component quality.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉 實施例,並配合所附圖式作詳細說明如下。 In order to make the above features and advantages of the present invention more apparent, the following is a special The embodiments are described in detail below in conjunction with the drawings.

10‧‧‧雷射加工物 10‧‧‧Laser processing

A1、A2‧‧‧區域 A1, A2‧‧‧ area

B、BB‧‧‧雷射光 B, BB‧‧ ‧ laser light

B1‧‧‧第一雷射光 B1‧‧‧first laser light

B2‧‧‧第二雷射光 B2‧‧‧second laser light

BB1‧‧‧反射圖案 BB1‧‧‧ reflection pattern

BB2‧‧‧點狀雜訊 BB2‧‧‧ point noise

D1‧‧‧第一方向 D1‧‧‧ first direction

D2‧‧‧第二方向 D2‧‧‧ second direction

DD‧‧‧距離 DD‧‧‧ distance

H‧‧‧厚度 H‧‧‧thickness

O1、O2、O3‧‧‧孔徑 O1, O2, O3‧‧‧ aperture

R、R’‧‧‧預設路線 R, R’‧‧‧Preset route

R1‧‧‧第一雷射作用區 R1‧‧‧first laser action zone

R2‧‧‧第二雷射作用區 R2‧‧‧second laser action zone

R3‧‧‧非雷射作用區 R3‧‧‧ non-laser zone

RR‧‧‧路徑 RR‧‧‧ Path

S‧‧‧雷射切割面 S‧‧‧ laser cutting surface

S1‧‧‧第一面 S1‧‧‧ first side

S2‧‧‧第二面 S2‧‧‧ second side

SA、SB‧‧‧斷裂面 SA, SB‧‧‧ fracture surface

SC‧‧‧雷射光移除面 SC‧‧‧Laser light removal surface

SUB‧‧‧基板 SUB‧‧‧ substrate

T、T1、T2‧‧‧聚焦深度 T, T1, T2‧‧‧ Depth of focus

W1、W2‧‧‧寬度 W1, W2‧‧‧ width

X、X1、X2‧‧‧聚焦處 X, X1, X2‧‧‧ focus

θ1、θ2‧‧‧夾角 Θ1, θ2‧‧‧ angle

圖1是習知的一種雷射切割的示意圖。 Figure 1 is a schematic illustration of a conventional laser cutting.

圖2是依照本發明的第一實施例的一種雷射加工方法的示意圖。 2 is a schematic diagram of a laser processing method in accordance with a first embodiment of the present invention.

圖3是雷射光被圖2的雷射加工物反射後的示意圖。 3 is a schematic view of laser light reflected by the laser processed material of FIG. 2.

圖4是依照本發明的第二實施例的一種雷射加工方法的剖面示意圖。 4 is a cross-sectional view showing a laser processing method in accordance with a second embodiment of the present invention.

圖5是依照本發明的第三實施例的一種雷射加工方法的剖面示意圖。 Figure 5 is a cross-sectional view showing a laser processing method in accordance with a third embodiment of the present invention.

圖6是依照本發明的第四實施例的一種雷射加工方法的剖面示意圖。 Figure 6 is a cross-sectional view showing a laser processing method in accordance with a fourth embodiment of the present invention.

圖7A是依照本發明的第五實施例的一種雷射加工方法的剖面示意圖。 Figure 7A is a cross-sectional view showing a laser processing method in accordance with a fifth embodiment of the present invention.

圖7B是習知技術的一種雷射加工方法的剖面示意圖。 7B is a schematic cross-sectional view of a laser processing method of the prior art.

圖2是依照本發明的第一實施例的一種雷射加工方法的示意圖,其中圖2的上半部及下半部分別繪示基板加工前後。請參照圖2,雷射加工方法例如為雷射切割的方法,且雷射加工方法 包括以下步驟。首先,提供一目標加工物,如基板SUB。基板SUB可以是任何欲進行雷射加工(例如進行切割、鑽孔或表面改質等)的基材。舉例而言,基板SUB的材料可以是無機非金屬材料,如半導體基板、玻璃、陶瓷等,但不以此為限。基板SUB具有第一面S1以及第二面S2,其中第一面S1與第二面S2相對,且例如是彼此平行,但不限於此。 2 is a schematic view of a laser processing method according to a first embodiment of the present invention, wherein the upper and lower halves of FIG. 2 are respectively shown before and after substrate processing. Referring to FIG. 2, the laser processing method is, for example, a laser cutting method, and the laser processing method Includes the following steps. First, a target workpiece such as a substrate SUB is provided. The substrate SUB can be any substrate that is intended to be laser processed (eg, cut, drilled, or surface modified, etc.). For example, the material of the substrate SUB may be an inorganic non-metal material, such as a semiconductor substrate, glass, ceramics, etc., but not limited thereto. The substrate SUB has a first surface S1 and a second surface S2, wherein the first surface S1 is opposite to the second surface S2 and is, for example, parallel to each other, but is not limited thereto.

接著,以第一雷射光B1照射第一面S1,且以第二雷射光B2照射第二面S2,其中第一雷射光B1與第二雷射光B2的傳遞方向相反。為便於繪示,圖2以箭頭表示第一雷射光B1與第二雷射光B2。 Next, the first surface S1 is irradiated with the first laser light B1, and the second surface S2 is irradiated with the second laser light B2, wherein the first laser light B1 and the second laser light B2 are transmitted in opposite directions. For convenience of drawing, FIG. 2 indicates the first laser light B1 and the second laser light B2 by arrows.

詳言之,第一雷射光B1沿第一方向D1照射第一面S1。第一方向D1為第一面S1指向第二面S2的方向,且第一方向D1例如垂直於第一面S1,也就是說,第一方向D1與第一面S1的夾角θ1等於90度,但不以此為限。另一方面,由於本實施例的第一面S1平行於第二面S2,因此,第一方向D1與第二面S2的夾角,亦即第一方向D1的反方向與第二面S2的夾角θ2,也等於90度,但亦不以此為限。在另一實施例中,當第一面S1與第二面S2彼此不平行時,夾角θ2例如介於0度至180度之間,且不等於90。 In detail, the first laser light B1 illuminates the first surface S1 along the first direction D1. The first direction D1 is a direction in which the first surface S1 points to the second surface S2, and the first direction D1 is, for example, perpendicular to the first surface S1, that is, the angle θ1 between the first direction D1 and the first surface S1 is equal to 90 degrees. But not limited to this. On the other hand, since the first surface S1 of the embodiment is parallel to the second surface S2, the angle between the first direction D1 and the second surface S2, that is, the angle between the opposite direction of the first direction D1 and the second surface S2 Θ2 is also equal to 90 degrees, but it is not limited to this. In another embodiment, when the first face S1 and the second face S2 are not parallel to each other, the angle θ2 is, for example, between 0 degrees and 180 degrees, and is not equal to 90 degrees.

第一雷射光B1以及第二雷射光B2可以分別為連續波,但不限於此。在另一實施例中,第一雷射光B1以及第二雷射光B2可分別為脈衝同調光,且第一雷射光B1以及第二雷射光B2到 達基板SUB的時間差可為0或不為0。此外,第一雷射光B1以及第二雷射光B2可源自於一雷射光源,且例如透過架設光路來分成反方向傳遞的第一雷射光B1以及第二雷射光B2。或者,第一雷射光B1以及第二雷射光B2可分別源自於兩個雷射光源。當然,第一雷射光B1以及第二雷射光B2的其中至少一者也可源自於兩個以上的雷射光源,且在照射至基板SUB之前利用合光元件進行合光。 The first laser light B1 and the second laser light B2 may be continuous waves, respectively, but are not limited thereto. In another embodiment, the first laser light B1 and the second laser light B2 may be pulsed dimming, respectively, and the first laser light B1 and the second laser light B2 are The time difference of the substrate SUB may be 0 or not 0. In addition, the first laser light B1 and the second laser light B2 may be derived from a laser light source and split into the first laser light B1 and the second laser light B2 transmitted in the opposite direction, for example, by erecting the optical path. Alternatively, the first laser light B1 and the second laser light B2 may be derived from two laser light sources, respectively. Of course, at least one of the first laser light B1 and the second laser light B2 may be derived from two or more laser light sources, and may be combined by a light combining element before being irradiated to the substrate SUB.

如圖2的上半部所示,本實施例的第一雷射光B1與第二雷射光B2例如在第一方向D1上對齊。換言之,第一雷射光B1與第二雷射光B2在與第一方向D1垂直的第二方向D2上的偏移量為0。或者,也可視為第一雷射光B1的聚焦處X1與第二雷射光B2的聚焦處X2的連線平行於第一方向D1。 As shown in the upper half of FIG. 2, the first laser light B1 and the second laser light B2 of the present embodiment are aligned, for example, in the first direction D1. In other words, the offset amount of the first laser light B1 and the second laser light B2 in the second direction D2 perpendicular to the first direction D1 is zero. Alternatively, it may be considered that the line connecting the focus X1 of the first laser light B1 and the focus X2 of the second laser light B2 is parallel to the first direction D1.

在本實施例中,第一雷射光B1以及第二雷射光B2分別聚焦於基板SUB中,其中聚焦處X1位於第一面S1與聚焦處X2之間,且聚焦處X2位於第二面S2與聚焦處X1之間。所述聚焦的方法例如是透過聚焦鏡的設置,其中用以匯聚第一雷射光B1的聚焦鏡及用以匯聚第二雷射光B2的聚焦鏡的焦距或數值孔徑等皆可獨立設置。需說明的是,本發明不用以限定第一雷射光B1與第二雷射光B2的聚焦深度T1、T2(即聚焦處X1與第一面S1的距離以及聚焦處X2與第二面S2的距離)。依據不同的雷射功率大小、不同的雷射光源或是不同的設計需求,第一雷射光B1也可聚焦於第一面S1,且第二雷射光B2聚焦於基板SUB中。或者,第 二雷射光B2可聚焦於第二面S2,且第一雷射光B1聚焦於基板SUB中。又或者,第一雷射光B1聚焦於第一面S1,且第二雷射光B2聚焦於第二面S2。也就是說,第一雷射光B1與第二雷射光B2的聚焦深度T1、T2可為0。再者,第一雷射光B1也可聚焦於第一面S1的上方,且第二雷射光B2可聚焦於第二面S2的下方。也就是說,聚焦處X1、聚焦處X2位於基板SUB之外。 In this embodiment, the first laser light B1 and the second laser light B2 are respectively focused on the substrate SUB, wherein the focus portion X1 is located between the first surface S1 and the focus portion X2, and the focus portion X2 is located at the second surface S2 and Focus is between X1. The method of focusing is, for example, a setting through a focusing mirror, wherein a focal length of the focusing mirror for concentrating the first laser light B1 and a focusing mirror for concentrating the second laser light B2 can be independently set. It should be noted that the present invention does not need to limit the depths of focus T1, T2 of the first laser light B1 and the second laser light B2 (ie, the distance between the focus portion X1 and the first surface S1 and the distance between the focus portion X2 and the second surface S2). ). The first laser light B1 can also be focused on the first surface S1 and the second laser light B2 can be focused on the substrate SUB according to different laser power levels, different laser light sources or different design requirements. Or, the first The two laser light B2 can be focused on the second surface S2, and the first laser light B1 is focused on the substrate SUB. Still alternatively, the first laser light B1 is focused on the first surface S1, and the second laser light B2 is focused on the second surface S2. That is, the depths of focus T1, T2 of the first laser light B1 and the second laser light B2 may be zero. Furthermore, the first laser light B1 can also be focused above the first surface S1, and the second laser light B2 can be focused below the second surface S2. That is to say, the focus X1 and the focus X2 are located outside the substrate SUB.

透過使第一雷射光B1與第二雷射光B2分別由基板SUB的相對兩側入射基板SUB,可導引基板SUB沿兩聚焦處X1、X2之連線斷裂。因此,本實施例可較佳地控制基板SUB斷裂的方向以及降低毛邊的生成,而可省略除去毛邊的後續製程,並提升雷射加工製程的速度。此外,由於本實施例是利用兩個剝離點(指聚焦處X1與聚焦處X2)之間應力的導引使基板SUB斷裂,因此可降低環境溫度對於加工精密度的影響。再者,相較於習知技術的單側入光,本實施例的雙側入光可在較小的聚焦深度T1、T2下達到前述切割基板SUB的效果,因而有助於降低前述錐度對於精密加工的影響。 By causing the first laser light B1 and the second laser light B2 to be incident on the substrate SUB from opposite sides of the substrate SUB, respectively, the substrate SUB can be guided to be broken along the line connecting the two focal points X1 and X2. Therefore, the present embodiment can preferably control the direction in which the substrate SUB is broken and reduce the generation of the burrs, and the subsequent process of removing the burrs can be omitted, and the speed of the laser processing process can be improved. Further, since the present embodiment breaks the substrate SUB by the guidance of the stress between the two peeling points (referring to the focus X1 and the focus X2), the influence of the ambient temperature on the processing precision can be reduced. Furthermore, the double-sided light incident of the present embodiment can achieve the effect of cutting the substrate SUB at a smaller depth of focus T1, T2 compared to the one-side light incident of the prior art, thereby contributing to the reduction of the aforementioned taper. The impact of precision machining.

值得一提的是,當第一雷射光B1以及第二雷射光B2分別為脈衝同調光時,透過調變第一雷射光B1以及第二雷射光B2到達基板SUB的時間差,晚抵達基板SUB的雷射光可導引先抵達基板SUB的雷射光所產生的初始應力,並誘導基板SUB沿兩聚焦處X1、X2之連線斷裂。並且,雷射光於基板SUB中會產生衝擊波(shock wave),當兩雷射光所造成的衝擊波產生建設性干涉及/ 或兩雷射光產生建設性干涉時,可進一步提升雷射光斷裂基板SUB的能力。 It is worth mentioning that when the first laser light B1 and the second laser light B2 are respectively pulsed and dimmed, the time difference between the first laser light B1 and the second laser light B2 reaching the substrate SUB is modulated, and the substrate SUB arrives late. The laser light can guide the initial stress generated by the laser light reaching the substrate SUB first, and induce the substrate SUB to break along the line connecting the two focal points X1, X2. Moreover, the laser light generates a shock wave in the substrate SUB, and the shock wave caused by the two laser lights is constructively involved/ Or when the two lasers generate constructive interference, the ability of the laser to break the substrate SUB can be further improved.

藉由將第一雷射光B1與第二雷射光B2共同沿預設路線R平移,即可將基板SUB切割成兩半。請參見圖2的下半部,由上述雷射切割所形成的雷射加工物10分別具有一雷射切割面S。雷射切割面S包括條狀的第一雷射作用區R1、條狀的第二雷射作用區R2以及條狀的非雷射作用區R3,其中第一雷射作用區R1與第二雷射作用區R2分別位於非雷射作用區R3的相對兩側。所述第一雷射作用區R1是對應基板SUB被第一雷射光B1移除的區域,而第二雷射作用區R2是對應基板SUB被第二雷射光B2移除的區域,非雷射作用區R3則是對應基板SUB因應力而斷裂的區域。 The substrate SUB can be cut into two halves by shifting the first laser light B1 and the second laser light B2 along the preset path R. Referring to the lower half of Fig. 2, the laser workpieces 10 formed by the above laser cutting have a laser cutting plane S, respectively. The laser cutting plane S includes a strip-shaped first laser action area R1, a strip-shaped second laser action area R2, and a strip-shaped non-laser action area R3, wherein the first laser action area R1 and the second mine The radiation action regions R2 are respectively located on opposite sides of the non-laser action region R3. The first laser action region R1 is a region where the corresponding substrate SUB is removed by the first laser light B1, and the second laser action region R2 is a region where the corresponding substrate SUB is removed by the second laser light B2, non-laser The action region R3 is a region where the substrate SUB is broken due to stress.

第一雷射作用區R1、第二雷射作用區R2以及非雷射作用區R3的型態會與雷射功率、聚焦深度T1、T2相關。進一步而言,第一雷射作用區R1的寬度W1會與第一雷射光B1的功率、第一雷射光B1的聚焦深度T1及所使用的聚焦鏡的焦深(或數值孔徑)呈正相關。所述焦深是指雷射光之焦點在光軸方向上的長度。當數值孔徑越大,焦深越淺,而雷射光在光軸方向上的作用範圍變短。同理,第二雷射作用區R2的寬度W2會與第二雷射光B2的功率、第二雷射光B2的聚焦深度T2及所使用的聚焦鏡的焦深(或數值孔徑)呈正相關。在本實施例中,第一雷射作用區R1的寬度W1近似於第一雷射光B1的聚焦深度T1,而第二雷射作用區 R2的寬度W2近似於第二雷射光B2的聚焦深度T2。 The types of the first laser action zone R1, the second laser action zone R2, and the non-laser zone R3 are related to the laser power, the depth of focus T1, T2. Further, the width W1 of the first laser action region R1 is positively correlated with the power of the first laser light B1, the depth of focus T1 of the first laser light B1, and the depth of focus (or numerical aperture) of the focusing mirror used. The depth of focus refers to the length of the focus of the laser light in the direction of the optical axis. When the numerical aperture is larger, the depth of focus is shallower, and the range of action of the laser light in the optical axis direction becomes shorter. Similarly, the width W2 of the second laser action region R2 is positively correlated with the power of the second laser light B2, the depth of focus T2 of the second laser light B2, and the depth of focus (or numerical aperture) of the focusing mirror used. In this embodiment, the width W1 of the first laser action region R1 is approximated to the depth of focus T1 of the first laser light B1, and the second laser action region The width W2 of R2 is approximated to the depth of focus T2 of the second laser light B2.

此外,本實施例的第一雷射作用區R1以及第二雷射作用區R2不與非雷射作用區R3落在同一平面。進一步而言,本實施例的雷射切割面S為一多折面,其中雷射加工物10對應非雷射作用區R3的表面實質上是由聚焦處X1與聚焦處X2的連線與預設路線R所構成的平面,而雷射加工物10對應第一雷射作用區R1以及第二雷射作用區R2的表面則為雷射作用範圍隨雷射傳播方向變化所生成的斜面。 In addition, the first laser action region R1 and the second laser action region R2 of the present embodiment do not fall in the same plane as the non-laser action region R3. Further, the laser cutting surface S of the embodiment is a multi-fold surface, wherein the surface of the laser processing object 10 corresponding to the non-laser action region R3 is substantially connected and pre-wired by the focus portion X1 and the focus portion X2. A plane formed by the route R is provided, and the surface of the laser processed object 10 corresponding to the first laser action zone R1 and the second laser action zone R2 is a slope formed by a change in the range of the laser action with respect to the direction of propagation of the laser.

由於第一雷射作用區R1與第二雷射作用區R2經由雷射剝離而形成,而非雷射作用區R3經由應力斷裂而形成,因此第一雷射作用區R1的光學特性表現相近於第二雷射作用區R2的光學特性表現,且第一雷射作用區R1與第二雷射作用區R2的光學特性表現不同於非雷射作用區R3的光學特性表現。 Since the first laser action region R1 and the second laser action region R2 are formed by laser peeling, and the non-laser action region R3 is formed by stress fracture, the optical characteristics of the first laser action region R1 are similar to each other. The optical characteristics of the second laser action region R2 are expressed, and the optical characteristics of the first laser action region R1 and the second laser action region R2 are different from those of the non-laser region R3.

圖3是雷射光被圖2的雷射加工物反射後的示意圖。請參照圖3,當以一照射範圍涵蓋雷射切割面S的長條形雷射光BB斜向入射雷射切割面S時,雷射光BB傳遞至非雷射作用區R3時會被鏡面反射,而於光束的反射區RA中形成與長條形雷射光BB圖案相似的反射圖案BB1。另一方面,當雷射光BB傳遞至第一雷射作用區R1或第二雷射作用區R2時會被漫反射,而於反射圖案BB1的兩側形成多個點狀雜訊BB2。換言之,雷射切割面S對應第一雷射作用區R1以及第二雷射作用區R2的表面為漫反射面(diffuse reflection surface),而雷射切割面S對應非雷射作用區R3 的表面為鏡面反射面(specular reflection)。 3 is a schematic view of laser light reflected by the laser processed material of FIG. 2. Referring to FIG. 3, when the elongated laser light BB obliquely incident on the laser cutting surface S is covered by an irradiation range S, the laser light BB is specularly reflected when it is transmitted to the non-laser action region R3. A reflection pattern BB1 similar to the pattern of the elongated laser light BB is formed in the reflection area RA of the light beam. On the other hand, when the laser light BB is transmitted to the first laser action area R1 or the second laser action area R2, it is diffusely reflected, and a plurality of point noises BB2 are formed on both sides of the reflection pattern BB1. In other words, the surface of the laser cutting surface S corresponding to the first laser action area R1 and the second laser action area R2 is a diffuse reflection surface, and the laser cut surface S corresponds to the non-laser action area R3. The surface is specular reflection.

雷射加工物10的材料可以是透明材料或非透明材料。當雷射加工物10的材料是透明材料(如玻璃)時,非雷射作用區R3的光穿透率高於第一雷射作用區R1以及第二雷射作用區R2的光穿透率。進一步而言,當雷射加工物10的材料是透明材料時,雷射加工物10對應非雷射作用區R3的表面的光穿透率大體上相同於雷射加工物10原本材料的光穿透率,而雷射加工物10對應第一雷射作用區R1以及第二雷射作用區R2的表面則呈現人眼難以透視的霧面。 The material of the laser workpiece 10 may be a transparent material or a non-transparent material. When the material of the laser processed material 10 is a transparent material (such as glass), the light transmittance of the non-laser action region R3 is higher than the light transmittance of the first laser action region R1 and the second laser action region R2. . Further, when the material of the laser processed object 10 is a transparent material, the light transmittance of the surface of the laser processed object 10 corresponding to the non-laser action region R3 is substantially the same as that of the original material of the laser processed object 10. The transmittance, and the surface of the laser workpiece 10 corresponding to the first laser action area R1 and the second laser action area R2 presents a matte surface that is difficult for the human eye to see through.

圖4是依照本發明的第二實施例的一種雷射加工方法的剖面示意圖。請參照圖4,本實施例的雷射加工方法大致相同於圖2的雷射加工方法。主要差異在於,本實施例的第一雷射光B1聚焦於第一面S1,且第二雷射光B2聚焦於基板SUB中。換言之,聚焦處X1位在第一面S1,而聚焦處X2位於第一面S1與第二面S2之間。此外,本實施例的第一雷射光B1與第二雷射光B2在第一方向D1上不對齊。換言之,第一雷射光B1與第二雷射光B2在第二方向D2上的偏移量(距離DD)不為0。然而,為達到讓基板SUB沿兩聚焦處X1、X2之連線斷裂之目的,距離DD較佳是小於或等於基板SUB的厚度H。然而,在不同的系統架設下(例如是改變雷射光源或改變雷射功率等),距離DD大於基板SUB的厚度H也可能達到前述誘導斷裂的效果。如圖4的下半部所示,本實施例的基板SUB例如是沿路徑RR斷裂,且雷射切割面S例如為 一曲面。值得一提的是,習知技術以單一雷射光單側入射基板並無法控制斷裂面的方向,然而,本實施例透過調變第一雷射光B1與第二雷射光B2的聚焦深度或是調變距離DD,可改變雷射切割面S的彎曲形狀及彎曲程度。在另一實施例中,雷射切割面S也可以是多個平面組成的多折面。 4 is a cross-sectional view showing a laser processing method in accordance with a second embodiment of the present invention. Referring to FIG. 4, the laser processing method of the present embodiment is substantially the same as the laser processing method of FIG. The main difference is that the first laser light B1 of the present embodiment is focused on the first surface S1, and the second laser light B2 is focused on the substrate SUB. In other words, the focus X1 is located on the first side S1, and the focus X2 is located between the first side S1 and the second side S2. Further, the first laser light B1 and the second laser light B2 of the present embodiment are not aligned in the first direction D1. In other words, the offset amount (distance DD) of the first laser light B1 and the second laser light B2 in the second direction D2 is not zero. However, in order to achieve the purpose of causing the substrate SUB to break along the line connecting the two focal points X1, X2, the distance DD is preferably less than or equal to the thickness H of the substrate SUB. However, under different system erections (for example, changing the laser source or changing the laser power, etc.), the distance DD is greater than the thickness H of the substrate SUB, and the aforementioned induced fracture effect may also be achieved. As shown in the lower half of FIG. 4, the substrate SUB of the present embodiment is broken, for example, along the path RR, and the laser cutting surface S is, for example, a curved surface. It is worth mentioning that the conventional technology does not control the direction of the fracture surface by a single laser incident on one side of the substrate. However, in this embodiment, the depth of focus or the modulation of the first laser light B1 and the second laser light B2 are modulated. The variable distance DD can change the curved shape and the degree of bending of the laser cutting surface S. In another embodiment, the laser cutting surface S may also be a multi-folded surface composed of a plurality of planes.

圖5是依照本發明的第三實施例的一種雷射加工方法的剖面示意圖。請參照圖5,本實施例的雷射加工方法大致相同於圖2的雷射加工方法。主要差異在於,本實施例的第一雷射光B1與第二雷射光B2分別匯聚在第一面S1與第二面S2。由於基板SUB沿兩聚焦處X1、X2之連線(如路徑RR)斷裂,因此雷射切割面S為一平行第一方向D1的平面。 Figure 5 is a cross-sectional view showing a laser processing method in accordance with a third embodiment of the present invention. Referring to FIG. 5, the laser processing method of the present embodiment is substantially the same as the laser processing method of FIG. The main difference is that the first laser light B1 and the second laser light B2 of the embodiment are respectively concentrated on the first surface S1 and the second surface S2. Since the substrate SUB is broken along the line connecting the two focal points X1, X2 (such as the path RR), the laser cutting surface S is a plane parallel to the first direction D1.

此外,本實施例的第一雷射光B1的傳遞方向(即第一方向D1)不垂直於第一面S1,且第二雷射光B2的傳遞方向(即第一方向D1的反方向)不垂直於第二面S2。換言之,第一方向D1與第一面S1以及第二面S2的夾角θ1、θ2都不等於90度。進一步而言,本實施例的基板SUB例如是相對第一方向D1傾斜。由於第一面S1平行於第二面S2,因此,夾角θ1與夾角θ2互為補角,也就是夾角θ1與夾角θ2的總和為180度,但本發明不限於此。舉例而言,在另一實施例中,第一面S1可不平行於第二面S2,且夾角θ1、θ2分別介於0度至180度之間。 In addition, the transmission direction of the first laser light B1 (ie, the first direction D1) of the present embodiment is not perpendicular to the first surface S1, and the transmission direction of the second laser light B2 (ie, the opposite direction of the first direction D1) is not vertical. On the second side S2. In other words, the angles θ1 and θ2 between the first direction D1 and the first surface S1 and the second surface S2 are not equal to 90 degrees. Further, the substrate SUB of the present embodiment is inclined, for example, with respect to the first direction D1. Since the first surface S1 is parallel to the second surface S2, the angle θ1 and the included angle θ2 complement each other, that is, the sum of the angle θ1 and the angle θ2 is 180 degrees, but the present invention is not limited thereto. For example, in another embodiment, the first surface S1 may not be parallel to the second surface S2, and the included angles θ1, θ2 are between 0 degrees and 180 degrees, respectively.

上述雷射加工皆以雷射切割舉例說明,但本發明不限於此。圖6是依照本發明的第四實施例的一種雷射加工方法的剖面 示意圖。請參照圖6,第一雷射光B1與第二雷射光B2例如分別匯聚在基板SUB的第一面S1與第二面S2,且共同沿預設路線R平移,以對基板SUB進行表面改質。相較於習知技術以單一雷射光於基板的單側進行表面改質,本實施例至少可提升雷射加工時的速度。 The above laser processing is exemplified by laser cutting, but the present invention is not limited thereto. Figure 6 is a cross section of a laser processing method in accordance with a fourth embodiment of the present invention schematic diagram. Referring to FIG. 6, the first laser light B1 and the second laser light B2 are respectively concentrated on the first surface S1 and the second surface S2 of the substrate SUB, and are collectively translated along the preset path R to surface-modify the substrate SUB. . Compared with the prior art, surface modification is performed on a single side of the substrate with a single laser light, and this embodiment can at least improve the speed at the time of laser processing.

圖7A是依照本發明的第五實施例的一種雷射加工方法的剖面示意圖。圖7B是習知技術的一種雷射加工方法的剖面示意圖。請參照圖7A,第一雷射光B1與第二雷射光B2例如分別匯聚在基板SUB的第一面S1與第二面S2,且分別沿預設路線R、R’移動,以進行鑽孔。 Figure 7A is a cross-sectional view showing a laser processing method in accordance with a fifth embodiment of the present invention. 7B is a schematic cross-sectional view of a laser processing method of the prior art. Referring to FIG. 7A, the first laser light B1 and the second laser light B2 are respectively concentrated on the first surface S1 and the second surface S2 of the substrate SUB, respectively, and are respectively moved along the preset paths R, R' for drilling.

請參照圖7A及圖7B,相較於習知技術以單一雷射光B於基板SUB的單側進行鑽孔,本實施例的第一雷射光B1與第二雷射光B2的聚焦深度T1、T2可小於雷射光B的聚焦深度T。因此,相較於習知技術,本實施例可相對減緩前述的錐度現象,使得本實施例之雷射鑽孔所形成的孔徑O1、O2小於習知技術之雷射鑽孔所形成的孔徑O3。此外,相較於習知技術,本實施例可具有較為對稱之穿孔結構,且可縮短鑽孔所需的時間。 Referring to FIG. 7A and FIG. 7B, the single laser light B is drilled on one side of the substrate SUB, and the depths of focus T1 and T2 of the first laser light B1 and the second laser light B2 of the present embodiment are compared with those of the prior art. It may be smaller than the depth of focus T of the laser light B. Therefore, compared with the prior art, the embodiment can relatively slow down the taper phenomenon, so that the apertures O1 and O2 formed by the laser drilling of the embodiment are smaller than the aperture O3 formed by the laser drilling of the prior art. . In addition, the present embodiment can have a relatively symmetrical perforated structure and can shorten the time required for drilling, as compared with the prior art.

綜上所述,本發明上述的實施例利用雙雷射光分別於基板的對向側進行加工,以改善雷射加工時的精密度及速度,並使加工後的雷射加工物具有良好的元件品質。 In summary, the above embodiments of the present invention use dual laser light to process the opposite sides of the substrate to improve the precision and speed of the laser processing, and to make the processed laser processed object have good components. quality.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的 精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art without departing from the invention. In the spirit and scope, the scope of protection of the present invention is subject to the definition of the appended patent application.

10‧‧‧雷射加工物 10‧‧‧Laser processing

B1‧‧‧第一雷射光 B1‧‧‧first laser light

B2‧‧‧第二雷射光 B2‧‧‧second laser light

D1‧‧‧第一方向 D1‧‧‧ first direction

D2‧‧‧第二方向 D2‧‧‧ second direction

R‧‧‧預設路線 R‧‧‧Preset route

R1‧‧‧第一雷射作用區 R1‧‧‧first laser action zone

R2‧‧‧第二雷射作用區 R2‧‧‧second laser action zone

R3‧‧‧非雷射作用區 R3‧‧‧ non-laser zone

S‧‧‧雷射切割面 S‧‧‧ laser cutting surface

S1‧‧‧第一面 S1‧‧‧ first side

S2‧‧‧第二面 S2‧‧‧ second side

SUB‧‧‧基板 SUB‧‧‧ substrate

T1、T2‧‧‧聚焦深度 T1, T2‧‧‧ Depth of focus

W1、W2‧‧‧寬度 W1, W2‧‧‧ width

X1、X2‧‧‧聚焦處 X1, X2‧‧‧ Focus

θ1、θ2‧‧‧夾角 Θ1, θ2‧‧‧ angle

Claims (16)

一種雷射加工方法,包括:提供一基板,該基板具有一第一面以及一第二面,該第一面與該第二面相對;以及以一第一雷射光照射該第一面,且以一第二雷射光照射該第二面,其中該第一雷射光與該第二雷射光的傳遞方向在基板的法線方向上的分量為相反,其中該第一雷射光沿一第一方向照射該第一面,該第一雷射光與該第二雷射光在與該第一方向垂直的一第二方向上的距離大於0。 A laser processing method includes: providing a substrate having a first surface and a second surface opposite to the second surface; and illuminating the first surface with a first laser light, and Illuminating the second surface with a second laser light, wherein a direction of transmission of the first laser light and the second laser light is opposite in a normal direction of the substrate, wherein the first laser light is along a first direction Illuminating the first surface, the distance between the first laser light and the second laser light in a second direction perpendicular to the first direction is greater than zero. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光以及該第二雷射光是源自於一雷射光源或分別源自於多個雷射光源。 The laser processing method of claim 1, wherein the first laser light and the second laser light are derived from a laser light source or are respectively derived from a plurality of laser light sources. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光以及該第二雷射光分別為連續波。 The laser processing method of claim 1, wherein the first laser light and the second laser light are continuous waves, respectively. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光以及該第二雷射光分別為脈衝同調光,且該第一雷射光以及該第二雷射光到達該基板的時間差不為0。 The laser processing method of claim 1, wherein the first laser light and the second laser light are respectively pulsed and dimmed, and the time difference between the first laser light and the second laser light reaching the substrate Not 0. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光以及該第二雷射光分別為脈衝同調光,且該第一雷射光以及該第二雷射光到達該基板的時間差為0。 The laser processing method of claim 1, wherein the first laser light and the second laser light are respectively pulsed and dimmed, and the time difference between the first laser light and the second laser light reaching the substrate Is 0. 如申請專利範圍第1項所述的雷射加工方法,其中該第一方向與該第一面以及該第二面的夾角分別介於0度至180度之間。 The laser processing method of claim 1, wherein an angle between the first direction and the first surface and the second surface is between 0 and 180 degrees, respectively. 如申請專利範圍第6項所述的雷射加工方法,其中該第一方向與該第一面以及該第二面的夾角分別為90度。 The laser processing method of claim 6, wherein an angle between the first direction and the first surface and the second surface is 90 degrees. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光聚焦於該第一面或該基板中,該第二雷射光聚焦於該第二面或該基板中。 The laser processing method of claim 1, wherein the first laser light is focused on the first surface or the substrate, and the second laser light is focused on the second surface or the substrate. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光聚焦於該第一面的上方,該第二雷射光聚焦於該第二面的下方。 The laser processing method of claim 1, wherein the first laser light is focused above the first surface, and the second laser light is focused below the second surface. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光與該第二雷射光在該第二方向上的距離小於或等於該基板的厚度。 The laser processing method of claim 1, wherein the distance between the first laser light and the second laser light in the second direction is less than or equal to the thickness of the substrate. 如申請專利範圍第1項所述的雷射加工方法,其中該第一雷射光與該第二雷射光在該第二方向上的距離大於該基板的厚度。 The laser processing method of claim 1, wherein the distance between the first laser light and the second laser light in the second direction is greater than the thickness of the substrate. 一種雷射加工物,經由雷射切割而形成一雷射切割面,該雷射切割面包括一條狀的第一雷射作用區、一條狀的第二雷射作用區以及一條狀的非雷射作用區,其中該第一雷射作用區與該第二雷射作用區分別位於該非雷射作用區的相對兩側,當一光束傳遞至該第一雷射作用區或該第二雷射作用區時會被漫反射,且當該光束傳遞至該非雷射作用區時會被鏡面反射。 A laser processed object is formed by laser cutting to form a laser cutting surface, the laser cutting surface comprising a strip of first laser action area, a strip of second laser action area, and a strip of non-laser An action area, wherein the first laser action area and the second laser action area are respectively located on opposite sides of the non-laser action area, when a light beam is transmitted to the first laser action area or the second laser action The zone is diffusely reflected and is specularly reflected when the beam is transmitted to the non-laser zone. 如申請專利範圍第12項所述的雷射加工物,其中該雷射加工物的材料是無機非金屬材料。 The laser processed article of claim 12, wherein the material of the laser processed material is an inorganic non-metallic material. 如申請專利範圍第12項所述的雷射加工物,該雷射加工物的材料是透明材料,且該非雷射作用區的光穿透率高於該第一雷射作用區以及該第二雷射作用區的光穿透率。 The laser processed article of claim 12, wherein the material of the laser processed material is a transparent material, and the light transmittance of the non-laser action region is higher than the first laser action region and the second Light penetration rate of the laser action area. 如申請專利範圍第12項所述的雷射加工物,該雷射加工物的材料是非透明材料。 The laser processed article of claim 12, wherein the material of the laser processed article is a non-transparent material. 如申請專利範圍第12項所述的雷射加工物,其中該雷射切割面是一平面、一曲面或一多折面。 The laser processed article of claim 12, wherein the laser cutting surface is a plane, a curved surface or a multi-fold surface.
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