TWI566528B - Rail-to-rail comparator circuit and method thereof - Google Patents

Rail-to-rail comparator circuit and method thereof Download PDF

Info

Publication number
TWI566528B
TWI566528B TW104121252A TW104121252A TWI566528B TW I566528 B TWI566528 B TW I566528B TW 104121252 A TW104121252 A TW 104121252A TW 104121252 A TW104121252 A TW 104121252A TW I566528 B TWI566528 B TW I566528B
Authority
TW
Taiwan
Prior art keywords
voltage
resistor
controlled
control
circuit
Prior art date
Application number
TW104121252A
Other languages
Chinese (zh)
Other versions
TW201618467A (en
Inventor
林嘉亮
Original Assignee
瑞昱半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞昱半導體股份有限公司 filed Critical 瑞昱半導體股份有限公司
Publication of TW201618467A publication Critical patent/TW201618467A/en
Application granted granted Critical
Publication of TWI566528B publication Critical patent/TWI566528B/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/249Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors using clock signals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/125Discriminating pulses

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Manipulation Of Pulses (AREA)

Description

軌對軌比較電路與其方法 Rail-to-rail comparison circuit and method thereof

本發明係關於一種比較電路,且更關於一種高速運作且維持較低之功率消耗之比較電路。 The present invention relates to a comparison circuit and, more particularly, to a comparison circuit that operates at high speed and maintains low power consumption.

本領域的技術人員將能夠理解本發明所使用的用語以及相關微電子學基本概念,例如MOS(金屬氧化半導體)電晶體,包含NMOS(N型通道金屬氧化半導體)電晶體以及PMOS(P型通道金屬氧化物半導體),“閘極”、“源極”、“汲極”、“電壓”、“電流”、“電路”、“電路節點”、“電源供應”、“接地”、“軌對軌”、“時脈”、“比較電路”、“反相器”、“上拉”、“下拉”、以及“閂鎖”。像這些用語的基本概念都是顯而易見的現有技術文件,例如教科書,“類比CMOS積體電路設計”,貝赫 拉扎維,麥格羅-希爾(ISBN0-07-118839-8),表達了本領域之技術,因此將不會再詳細解釋說明。 Those skilled in the art will be able to understand the terminology used in the present invention and related basic concepts of microelectronics, such as MOS (Metal Oxide Semiconductor) transistors, including NMOS (N-channel metal oxide semiconductor) transistors and PMOS (P-type channels). Metal oxide semiconductors, "gate", "source", "dip", "voltage", "current", "circuit", "circuit node", "power supply", "ground", "rail pair" Rails, Clocks, Comparing Circuits, Inverters, Pullups, Pulldowns, and Latches. The basic concepts like these terms are obvious prior art documents, such as textbooks, "analog CMOS integrated circuit design", Behra Zavi, McGraw-Hill (ISBN0-07-118839-8), expressed The technology in the art will therefore not be explained in detail.

時脈比較電路係一種依據時脈定義之時序(timing)以偵測 差動訊號。差動訊號包含第一端和第二端。時脈比較電路依據依據時脈定義之時序(timing)接收差動訊號以及輸出一邏輯判斷(decision)。該時脈之一相位中,差動訊號之第一端準位係與差動訊號第二端的準位進行比較,比較之結果得到邏輯判斷。如果第一端準位為高於第二端準位,邏輯判斷被設定為“高”;如果第一端準位為低於第二端準位,邏輯判斷被設定為“低”。時脈比較的優點係以兩個因素評估:速度和功率消耗。時脈比較電路的速度係在於如何快速分析一個小的差動訊號,其中小的差動訊號之第一端準位非常接近第二端準位。時脈比較電路之功率消耗是指實現該比較功能之能量。實際上,時脈比較電路在速度和功率消耗之間必須作取捨。習知技術中,時脈比較電路比較一個小差動訊號比大差動訊號需要更長時間分析。因此,為了實現高速,通常需使用一前置放大器,進而促進放大差動訊號之分析比較。然而使用一個前置放大器,將增加整體功率之消耗。 The clock comparison circuit is based on the timing defined by the clock to detect Differential signal. The differential signal includes a first end and a second end. The clock comparison circuit receives the differential signal and outputs a logic decision according to the timing defined by the clock. In one phase of the clock, the first end level of the differential signal is compared with the level of the second end of the differential signal, and the result of the comparison is logically determined. If the first terminal level is higher than the second terminal level, the logic judgment is set to "high"; if the first terminal level is lower than the second terminal level, the logic judgment is set to "low". The advantages of clock comparison are evaluated in two factors: speed and power consumption. The speed of the clock comparison circuit is based on how to quickly analyze a small differential signal, wherein the first terminal of the small differential signal is very close to the second terminal level. The power consumption of the clock comparison circuit refers to the energy that implements the comparison function. In fact, the clock comparison circuit must make trade-offs between speed and power consumption. In the prior art, the clock comparison circuit requires a longer time to analyze a small differential signal than a large differential signal. Therefore, in order to achieve high speed, it is usually necessary to use a preamplifier to facilitate the analysis and comparison of the amplified differential signals. However, using a preamplifier will increase the overall power consumption.

本發明之目標之一係提供一高速和低功率消耗的比較電路。 One of the objectives of the present invention is to provide a high speed and low power consumption comparison circuit.

本發明之目標之一係提供一比較電路,能夠快速解析兩個訊號之間的比較處理,且在比較分析後自動關閉(shut off)以減少 功率消耗。 One of the objectives of the present invention is to provide a comparison circuit that can quickly resolve the comparison process between two signals and automatically shut down after comparison analysis to reduce Power consumption.

本發明之一實施例提供了一種軌對軌比較電路,用以比較一第一控制電壓及一第二控制電壓,包含:一PMOS電晶體對、一NMOS電晶體對、一第一壓控電阻、以及一第二壓控電阻。PMOS電晶體對在第一電路節點接收一第一電壓且在第二電路節點接收一第二電壓,並於第三電路節點輸出一第三電壓,且在第四電路節點輸出一第四電壓。NMOS電晶體對在第三電路節點接收一第三電壓且在第四電路節點接收一第四電壓,並於第一電路節點輸出第一電壓,且在第二電路節點輸出一第二電壓。第一壓控電阻耦接於第三電路節點與第二電路節點之間,包含並聯之一第一P型壓控電阻及一第一N型壓控電阻,分別之電阻值受控於第一控制電壓及第二控制電壓。第二壓控電阻耦接於第四電路節點與第一電路節點之間,包含並聯之一第二P型壓控電阻及一第二N型壓控電阻,分別之電阻值受控於第二控制電壓及第一控制電壓。其中,第一壓控電阻及第二壓控電阻更用以接收一時脈訊號,時脈訊號用以致能第一壓控電阻及第二壓控電阻。 An embodiment of the present invention provides a rail-to-rail comparison circuit for comparing a first control voltage and a second control voltage, including: a PMOS transistor pair, an NMOS transistor pair, and a first voltage control resistor. And a second voltage controlled resistor. The PMOS transistor pair receives a first voltage at the first circuit node and a second voltage at the second circuit node, and outputs a third voltage at the third circuit node, and outputs a fourth voltage at the fourth circuit node. The NMOS transistor pair receives a third voltage at the third circuit node and a fourth voltage at the fourth circuit node, and outputs a first voltage at the first circuit node and a second voltage at the second circuit node. The first voltage-controlled resistor is coupled between the third circuit node and the second circuit node, and includes a first P-type voltage-controlled resistor and a first N-type voltage-controlled resistor connected in parallel, and the resistance values are respectively controlled by the first Control voltage and second control voltage. The second voltage-controlled resistor is coupled between the fourth circuit node and the first circuit node, and includes a second P-type voltage-controlled resistor and a second N-type voltage-controlled resistor connected in parallel, wherein the resistance values are controlled by the second Control voltage and first control voltage. The first voltage-controlled resistor and the second voltage-controlled resistor are further configured to receive a clock signal, and the clock signal is used to enable the first voltage-controlled resistor and the second voltage-controlled resistor.

本發明之一實施例提供了一種方法,用以比較一第一控制電壓及一第二控制電壓,包含有下列步驟:併入(incorporating)一PMOS電晶體對,在第一電路節點接收一第一電壓且在第二電路 節點接收一第二電壓,並於第三電路節點輸出一第三電壓,且在第四電路節點輸出一第四電壓;併入一NMOS電晶體對,在第三電路節點接收第三電壓且在第四電路節點接收第四電壓,並於第一電路節點輸出第一電壓,且在第二電路節點輸出第二電壓;經由一第一壓控電阻耦接第三電路節點之第三電壓第二電路節點之第二電壓,其中第一壓控電阻包含並聯之一第一P型壓控電阻及一第一N型壓控電阻,分別之電阻值受控於第一控制電壓及第二控制電壓;經由一第二壓控電阻耦接第四電路節點之第四電壓至第一電路節點之第一電壓,其中第二壓控電阻包含並聯一第二P型壓控電阻及一第二N型壓控電阻,分別之電阻值受控於第二控制電壓及第一控制電壓。其中,經由第一壓控電阻及第二壓控電阻接收一時脈訊號以致能第一壓控電阻及第二壓控電阻。 An embodiment of the present invention provides a method for comparing a first control voltage and a second control voltage, comprising the steps of: incorporating a PMOS transistor pair, receiving a first circuit node a voltage and in the second circuit The node receives a second voltage, and outputs a third voltage at the third circuit node, and outputs a fourth voltage at the fourth circuit node; incorporates an NMOS transistor pair, receives the third voltage at the third circuit node, and The fourth circuit node receives the fourth voltage, and outputs a first voltage at the first circuit node, and outputs a second voltage at the second circuit node; and the third voltage of the third circuit node is coupled to the third circuit node via a first voltage control resistor. a second voltage of the circuit node, wherein the first voltage control resistor comprises a first P-type voltage control resistor and a first N-type voltage control resistor connected in parallel, wherein the resistance values are respectively controlled by the first control voltage and the second control voltage Translating a fourth voltage of the fourth circuit node to a first voltage of the first circuit node via a second voltage control resistor, wherein the second voltage control resistor comprises a second P-type voltage control resistor and a second N-type connected in parallel The voltage control resistors are respectively controlled by the second control voltage and the first control voltage. The first voltage controlled resistor and the second voltage controlled resistor receive a clock signal to enable the first voltage controlled resistor and the second voltage controlled resistor.

100‧‧‧軌對軌比較電路 100‧‧‧ rail-to-rail comparison circuit

110‧‧‧NMOS電晶體對 110‧‧‧ NMOS transistor pair

150‧‧‧PMOS電晶體對 150‧‧‧ PMOS transistor pairs

130、140、200、300‧‧‧壓控電阻 130, 140, 200, 300‧‧‧ voltage controlled resistors

151、152、221、222、233、234、242、311、313、341、321、323、331、333‧‧‧PMOS電晶體 151, 152, 221, 222, 233, 234, 242, 311, 313, 341, 321, 323, 331, 333‧‧‧ PMOS PMOS

111、112、211、212、241、231、232、314、342、324、333‧‧‧NMOS電晶體 111, 112, 211, 212, 241, 231, 232, 314, 342, 324, 333‧‧‧ NMOS transistors

101、102、103、104‧‧‧電路節點 101, 102, 103, 104‧‧‧ circuit nodes

181‧‧‧時脈1低準位,時脈2高準位 181‧‧‧clock 1 low level, clock 2 high level

182‧‧‧時脈1高準位,時脈2低準位 182‧‧‧clock 1 high level, clock 2 low level

210、310‧‧‧PMOS壓控電阻 210, 310‧‧‧ PMOS voltage controlled resistor

220、320‧‧‧NMOS壓控電阻 220, 320‧‧‧ NMOS voltage controlled resistor

240、340‧‧‧CMOS電阻(可選擇) 240, 340‧‧‧ CMOS resistors (optional)

230、330‧‧‧預置電路 230, 330‧‧‧ Preset circuit

312、322‧‧‧反相器 312, 322‧‧ ‧ inverter

315、316、325、326‧‧‧電路節點 315, 316, 325, 326‧‧‧ circuit nodes

第1A圖顯示依據本發明一實施例比較電路之功能方塊圖。 Figure 1A shows a functional block diagram of a comparison circuit in accordance with an embodiment of the present invention.

第1B圖顯示第1A圖比較電路時脈訊號之時序圖。 Figure 1B shows a timing diagram of the clock signal of the comparison circuit of Figure 1A.

第2圖顯示適用於第1A圖壓控電阻之電路圖。 Figure 2 shows a circuit diagram for the voltage-controlled resistor of Figure 1A.

第3圖顯示適用於第1A圖壓控電阻之替代電路圖。 Figure 3 shows an alternative circuit diagram for the voltage-controlled resistor of Figure 1A.

本發明之實施例係關於比較電路電路。雖然說明書描述了本發明的幾個實施例,但應可理解本發明可以用多種方式來實現,且不限於以下特定實施例或該些實施例所採用的任何特定方式特徵。在其它實施例中,不再贅述本領域技術通知之技術細節以避免模糊本發明。 Embodiments of the invention relate to comparison circuit circuits. Although the specification describes several embodiments of the invention, it is understood that the invention may be embodied in various forms and not limited to the specific embodiments disclosed herein. In other embodiments, the technical details of the technical notifications in the art are not described again to avoid obscuring the present invention.

本說明書揭露之資訊:“VDD”表示電源供應電路節點(或簡單之電源供應節點);邏輯訊號為“高”或“低”之一種訊號;當它被稱為“高”時,該邏輯訊號為高電壓準位等於電源供應節點之電壓準位(在此揭露標示為VDD);當它被稱為“低”時,該邏輯訊號為低電壓準位等於接地節點之電壓準位,但是應可理解,在此揭露資訊,“等於”為工程認知。例如,如果第一電壓A和第二電壓B之間差小於指定容忍值,該工程認知會將這個差被認為可忽略,且結果第一電壓A被稱為等於第二電壓。相似地,“零”在此揭露資訊也係工程認知;例如,如果電流小於指定容忍值,該電流被認為可忽略,因此被認為係工程認知上之零。此外,邏輯訊號也許暫時不是“高”或“低”;這種情況,例如,當邏輯訊號從“高”到“低”或“低”到“高”轉換,或決定之判斷過程。然而,因為轉換過程或暫時判斷該邏輯訊號在本質上仍稱為是“邏輯”性質。 Information disclosed in this specification: "VDD" means a power supply circuit node (or a simple power supply node); a signal whose logic signal is "high" or "low"; when it is called "high", the logic signal The high voltage level is equal to the voltage level of the power supply node (herein labeled as VDD); when it is called "low", the logic signal is the low voltage level equal to the voltage level of the ground node, but should It can be understood that the information is disclosed here, and "equal" is engineering cognition. For example, if the difference between the first voltage A and the second voltage B is less than the specified tolerance value, the engineering recognizes that the difference is considered negligible, and as a result, the first voltage A is said to be equal to the second voltage. Similarly, "zero" here discloses that information is also engineering knowledge; for example, if the current is less than the specified tolerance value, the current is considered negligible and is therefore considered to be zero in engineering knowledge. In addition, the logic signal may not be "high" or "low" for the time being; for example, when the logic signal transitions from "high" to "low" or "low" to "high", or the decision process is decided. However, because the conversion process or the temporary determination of the logic signal is still essentially referred to as a "logical" property.

第1A圖顯示依據本發明一實施例的比較電路100之功能 方塊圖,比較電路100包含:一PMOS電晶體對150、一NMOS電晶體對110、第一壓控電阻(VCR)130、以及第二壓控電阻(VCR)140。PMOS電晶體對150包含PMOS電晶體151和152,用於接收第一電路節點101之第一電壓V1和第二電路節點102之第二電壓V2,且在第三電路節點103輸出第三電壓V3和在第四電路節點104輸出第四電壓V4。NMOS電晶體對110包含NMOS電晶體111和112,用於接收第三電路節點103之第三電壓V3和第四電路節點104之第四電壓V4,並在第一電路節點101輸出第一電壓V1和在第二電路節點102輸出第二電壓V2。第一壓控電阻130受控於第一控制電壓VC1和第二控制電壓VC2,依據時脈訊號CLK運作且依據第二控制電壓VC2、第一控制電壓VC1之控制將第三電路節點103之第三電壓V3與第二電路節點102之第二電壓V2耦接。第二壓控電阻140受控於第二控制電壓VC2和第一控制電壓VC1,依據時脈訊號CLK運作且依據第二控制電壓VC2、第一控制電壓VC1之控制,將第四電路節點104之第四電壓V4和第一電路節點101之第一電壓V1耦接。NMOS電晶體對110和PMOS電晶體對150形成一個正回授迴路:當V3增加,由於NMOS電晶體111係依據V3來控制,因此將導致V1降低,而當V1降低,由於PMOS電晶體151係依 據V1之控制,因此又將導致V3增加,依此方式不斷循環;當V3降低導致V1增加,而PMOS電晶體151係依據V1之控制,因此又將導致V3降低,依此方式不斷循環。當V4增加時,NMOS電晶體112係依據V4控制,因此將導致V2降低,而當V2降低,由於PMOS電晶體152係依據V2之控制,因此又將導致V4增加;當V4降低,由於NMOS電晶體112係依據V4控制,導致V2增加,而當V2增加,透過PMOS電晶體152又將導致V4降低,形成一正回授迴路。由於正回授性質,使V3或V4具有一自加速(self-accelerating)變化,造成V3上升到VDD時V4下降至接地、或者V3下降至接地時V4上升到VDD。而若V3和V4都是從VDD下降,則競速狀態發生,下降速度較快者將贏得競速且下降至接地而另一個將會被拉高到VDD。其中,第一控制電壓VC1和第二控制電壓VC2將決定V3和V4之間哪一個上升到VDD和哪一個下降至接地。 FIG. 1A shows the function of the comparison circuit 100 in accordance with an embodiment of the present invention. In the block diagram, the comparison circuit 100 includes a PMOS transistor pair 150, an NMOS transistor pair 110, a first voltage controlled resistor (VCR) 130, and a second voltage controlled resistor (VCR) 140. The PMOS transistor pair 150 includes PMOS transistors 151 and 152 for receiving the first voltage V1 of the first circuit node 101 and the second voltage V2 of the second circuit node 102, and outputting the third voltage V3 at the third circuit node 103. And outputting a fourth voltage V4 at the fourth circuit node 104. The NMOS transistor pair 110 includes NMOS transistors 111 and 112 for receiving the third voltage V3 of the third circuit node 103 and the fourth voltage V4 of the fourth circuit node 104, and outputting the first voltage V1 at the first circuit node 101. And outputting the second voltage V2 at the second circuit node 102. The first voltage-controlled resistor 130 is controlled by the first control voltage VC1 and the second control voltage VC2, operates according to the clock signal CLK, and controls the third circuit node 103 according to the control of the second control voltage VC2 and the first control voltage VC1. The three voltages V3 are coupled to the second voltage V2 of the second circuit node 102. The second voltage-controlled resistor 140 is controlled by the second control voltage VC2 and the first control voltage VC1, operates according to the clock signal CLK, and according to the control of the second control voltage VC2 and the first control voltage VC1, the fourth circuit node 104 The fourth voltage V4 is coupled to the first voltage V1 of the first circuit node 101. The NMOS transistor pair 110 and the PMOS transistor pair 150 form a positive feedback loop: when V3 is increased, since the NMOS transistor 111 is controlled according to V3, V1 is lowered, and when V1 is lowered, the PMOS transistor is 151 according to According to the control of V1, it will cause V3 to increase, and continue to circulate in this way; when V3 is lowered, V1 is increased, and PMOS transistor 151 is controlled according to V1, which will cause V3 to decrease, and circulate continuously in this way. When V4 is increased, the NMOS transistor 112 is controlled according to V4, so that V2 is lowered, and when V2 is lowered, since the PMOS transistor 152 is controlled according to V2, V4 is increased again; when V4 is lowered, due to NMOS power The crystal 112 is controlled according to V4, resulting in an increase in V2, and as V2 increases, passing through the PMOS transistor 152 will again cause V4 to decrease, forming a positive feedback loop. Due to the positive feedback nature, V3 or V4 has a self-accelerating change, causing V4 to fall to ground when V3 rises to VDD or V4 to VDD when V3 falls to ground. If both V3 and V4 fall from VDD, the racing state occurs, and those with faster descent will win the race and fall to ground and the other will be pulled high to VDD. Among them, the first control voltage VC1 and the second control voltage VC2 will determine which of V3 and V4 rises to VDD and which one drops to ground.

第1A圖之時脈訊號CLK包含一第一時脈CLK[1]和第二時脈CLK[2],如第1B圖顯示之時序圖所示。CLK[2]係第一時脈CLK[1]之互補(即,邏輯反轉)。如第1B圖所示,時脈訊號CLK定義比較電路100之相位;當CLK[1]低準位且CLK[2]高準位(例如區塊181)時,比較電路100係位於一預設相位,其中VCR 130 和VCR 140在某些電路節點預先設置成一定準位。如當CLK[1]為高準位且CLK[2]為低準位時(如區塊182),時脈比較電路100係位於一主動相位,其係在比較VC1與VC2。在預設相位中,V3和V4由VCR 130和VCR 140拉高至VDD;進入主動相位時,V3和V4由VDD下降;如果VCR 130之電阻大於VCR 140電阻,流入VCR 130之第一電流I1將小於流入VCR 140之第二電流I2。如此將使V3比V4下降更慢;如果VCR 130之電阻小於VCR 140電阻,流入VCR 130之第一電流I1將大於流入VCR 140之第二電流I2。如此將使V4比V3下降更快。由於前面提到之正回授,V4將贏得競速並下降至接地,而V3將被拉升至VDD;相對的,當V3贏得競速並下降至接地,而V4將被拉升至VDD。比較電路100,依此方式,本發明之實施例利用VCR 130和VCR 140之電阻作用,可解析第一控制電壓VC1和第二控制電壓VC2之差值。 The clock signal CLK of FIG. 1A includes a first clock CLK[1] and a second clock CLK[2] as shown in the timing diagram of FIG. 1B. CLK[2] is the complement of the first clock CLK[1] (ie, logical inversion). As shown in FIG. 1B, the clock signal CLK defines the phase of the comparison circuit 100; when CLK[1] is low and the CLK[2] is high (eg, block 181), the comparison circuit 100 is located at a preset. Phase, where VCR 130 And the VCR 140 is pre-set to a certain level at certain circuit nodes. For example, when CLK[1] is at a high level and CLK[2] is at a low level (e.g., block 182), the clock comparator circuit 100 is in an active phase, which is compared to VC1 and VC2. In the preset phase, V3 and V4 are pulled high to VDD by VCR 130 and VCR 140; when entering the active phase, V3 and V4 are decreased by VDD; if the resistance of VCR 130 is greater than the resistance of VCR 140, the first current I1 flowing into VCR 130 It will be less than the second current I2 flowing into the VCR 140. This will cause V3 to fall more slowly than V4; if the resistance of VCR 130 is less than VCR 140 resistance, the first current I1 flowing into VCR 130 will be greater than the second current I2 flowing into VCR 140. This will make V4 fall faster than V3. Due to the positive feedback mentioned above, V4 will win the race and fall to ground, and V3 will be pulled up to VDD; in contrast, when V3 wins the race and drops to ground, V4 will be pulled up to VDD. Comparing circuit 100, in this manner, embodiments of the present invention utilize the resistance of VCR 130 and VCR 140 to resolve the difference between first control voltage VC1 and second control voltage VC2.

壓控電阻VCR 130和VCR 140係相同電路,但不同的控制方式使VCR 130和VCR 140電阻之間差值將表現出電壓VC1、VC2之差值。VCR 130和VCR 140兩者皆為可變電阻器,用以於兩端點VA和VB之間提供電阻值,該電阻值係由兩個端點VP與VN接收之兩控制訊號(VC1和VC2、或VC2和VC1) 決定,且VCR 130和VCR 140係依據由端點CK接收之時脈訊號CLK運作。 The voltage controlled resistors VCR 130 and VCR 140 are the same circuit, but different control modes cause the difference between the VCR 130 and VCR 140 resistors to exhibit the difference between the voltages VC1, VC2. Both the VCR 130 and the VCR 140 are variable resistors for providing a resistance value between the two ends VA and VB, which are two control signals (VC1 and VC2) received by the two terminals VP and VN. , or VC2 and VC1) It is determined that the VCR 130 and the VCR 140 operate in accordance with the clock signal CLK received by the endpoint CK.

第2圖顯示壓控電阻之一實施例,該圖中壓控電阻電路200適用於實施第1圖之VCR 130和VCR 140。VCR 200包含一端點VA用以耦接第1A圖之V3或者V4、一端點VB用以耦接第1A圖之V2或V1、一端點VP用以耦接第1A圖之VC1或者VC2、一端點VN用以耦接第1A圖之VC2或者VC1(參照第1A圖)、以及兩個時脈端點CK[1]和CK[2]用以耦接時脈訊號第1A圖之CLK,其包含前面所提CLK[1]和CLK[2]。(第1A圖中“CLK”和“CK”僅是為了簡潔表示;必須理解CLK包含兩個時脈CLK[1]、CLK[2];而CK包含兩個端點CK[1]和CK[2],其分別為CLK[1]和CLK[2]之介面)。 Figure 2 shows an embodiment of a voltage controlled resistor in which the voltage controlled resistor circuit 200 is adapted for implementation of the VCR 130 and VCR 140 of Figure 1. The VCR 200 includes an endpoint VA for coupling to V3 or V4 of FIG. 1A, an endpoint VB for coupling to V2 or V1 of FIG. 1A, and an endpoint VP for coupling to VC1 or VC2 of FIG. 1A. The VN is coupled to the VC2 or VC1 of FIG. 1A (refer to FIG. 1A), and the two clock terminals CK[1] and CK[2] are coupled to the CLK of the clock signal 1A, which includes CLK[1] and CLK[2] mentioned earlier. ("CLK" and "CK" in Figure 1A are for simplicity only; it must be understood that CLK contains two clocks CLK[1], CLK[2]; and CK contains two endpoints CK[1] and CK[ 2], which are the interfaces of CLK[1] and CLK[2] respectively.

如第2圖顯示之實施例,壓控電阻VCR 200包含一PMOS壓控電阻VCR 210、一NMOS壓控電阻VCR 220、以及一組預置電路230。PMOS壓控電阻VCR 210包含相互串聯之一受VP端點接收訊號控制之PMOS電晶體211和一受CK[2]端點接收之時脈訊號控制之PMOS電晶體212、NMOS壓控電阻VCR 220包含相互串聯之一受VN端點接收之訊號控制之NMOS電晶體221和一受CK[1]端點接收之時脈訊號控制之NMOS電晶體 222。預置電路230包含PMOS電晶體231和232、及NMOS電晶體233和234。PMOS電晶體231和232用以在時脈訊號端點CK[1]低準位時上拉VA和VC端點之電壓至VDD。NMOS電晶體233和234用以在時脈訊號端點CK[2]為高準位時下降VB和VD端點之電壓至接地。壓控電阻VCR 200更包含可選擇使用的(optional)CMOS電阻240和NMOS電晶體。CMOS電阻240包含受控於CK[2]端點接收之時脈訊號之PMOS電晶體241。NMOS電晶體242受控於CK[1]端點接收之時脈訊號。 As shown in the second embodiment, the voltage controlled resistor VCR 200 includes a PMOS voltage controlled resistor VCR 210, an NMOS voltage controlled resistor VCR 220, and a set of preset circuits 230. The PMOS voltage-controlled resistor VCR 210 includes a PMOS transistor 211 which is connected in series with one of the VP terminal receiving signals, and a PMOS transistor 212 and an NMOS voltage-controlled resistor VCR 220 which are controlled by the clock signal received by the CK[2] terminal. The NMOS transistor 221 including one of the series connected signals received by the VN terminal and the NMOS transistor controlled by the clock signal received by the CK[1] terminal 222. Preset circuit 230 includes PMOS transistors 231 and 232, and NMOS transistors 233 and 234. PMOS transistors 231 and 232 are used to pull the voltages of the VA and VC terminals to VDD when the clock signal terminal CK[1] is low. The NMOS transistors 233 and 234 are used to drop the voltages of the VB and VD terminals to ground when the clock signal terminal CK[2] is at a high level. The voltage controlled resistor VCR 200 further includes an optional CMOS resistor 240 and an NMOS transistor. CMOS resistor 240 includes a PMOS transistor 241 that is controlled by the clock signal received at the CK[2] endpoint. The NMOS transistor 242 is controlled by the clock signal received at the CK[1] endpoint.

在預設相位期間,如第1A圖和第1B圖所示之時脈CLK[1]為低準位且時脈CLK[2]高準位),端點CK[1]之時脈為低準位且端點CK[2]之時脈為高準位,如第2圖所示。預設相位期間,VA和VC的電壓被上拉至VDD、以及VB和VD的電壓被下拉至接地,而PMOS VCR 210,NMOS VCR 220和CMOS電阻240失效(disable)如同一開路電路。在主動相位期間,如第1A圖和第1B圖所示之時脈CLK[1]高準位且時脈CLK[2]低準位(在端點CK[1]之時脈為高準位和端點CK[2]之時脈為低準位,如第2圖所示;該主動相位期間,預置電路230失效,而且PMOS壓控電阻VCR 210、NMOS壓控電阻VCR 220、以及CMOS電阻240皆被致能(enable),且作用如同一由端點VP之電壓與端點VN之 電壓控制之電阻。如第1A圖所示,壓控電阻VCR 130之端點VP和VN分別為電壓VC1和VC2之介面,而壓控電阻VCR 140之端點VP和VN分別為VC1和VC2之介面。由於不同介面之因素,在主動相位期間,電壓VC1和VC2之間的差值將表現出壓控電阻VCR 130和VCR 140電阻之間的差值,如前所述,如此將導致電壓V3和V4其中一個上升至VDD而另一個下降至接地。 During the preset phase, as the clock CLK[1] shown in Figures 1A and 1B is low and the clock CLK[2] is high, the clock at the endpoint CK[1] is low. The level and the clock of the endpoint CK[2] are at a high level, as shown in Figure 2. During the preset phase, the voltages of VA and VC are pulled up to VDD, and the voltages of VB and VD are pulled down to ground, while PMOS VCR 210, NMOS VCR 220 and CMOS resistor 240 are disabled as the same open circuit. During the active phase, the clock CLK[1] as shown in Figures 1A and 1B is at a high level and the clock CLK[2] is at a low level (the clock at the endpoint CK[1] is at a high level. And the clock of the endpoint CK[2] is low level, as shown in FIG. 2; during the active phase, the preset circuit 230 is disabled, and the PMOS voltage controlled resistor VCR 210, the NMOS voltage controlled resistor VCR 220, and the CMOS The resistors 240 are all enabled and function as the same voltage and endpoint VN from the terminal VP. Voltage controlled resistor. As shown in FIG. 1A, the terminals VP and VN of the voltage controlled resistor VCR 130 are the interfaces of the voltages VC1 and VC2, respectively, and the terminals VP and VN of the voltage controlled resistor VCR 140 are the interfaces of VC1 and VC2, respectively. Due to different interface factors, the difference between voltages VC1 and VC2 during the active phase will exhibit the difference between the voltage-controlled resistor VCR 130 and the VCR 140 resistance, as previously described, which will result in voltages V3 and V4. One of them rises to VDD and the other drops to ground.

請參考第2圖,PMOS壓控電阻VCR 210和NMOS壓控電阻VCR 220一起形成「軌到軌」拓撲(rail-to rail topology),使得壓控電阻200可以在電壓VP和VN範圍工作,達到橫跨接地到電源VDD之準位。一實施例中,若能確保端點VN上之電壓平均值(mean value)不大於NMOS電晶體221之導通電壓,“可以選擇移除包含有端點VN之NMOS壓控電阻VCR 220。另一實施例,若能確保端點VP上之電壓平均值(mean value)不大於所PMOS電晶體211之導通電壓,可以選擇移除包含有端點VP之PMOS壓控電阻VCR 210。熟悉本領域技術人員可在任一特定應用去除不必要電路和端點,不再詳細解釋細節。再者,其他實施例中,可以選擇移除PMOS電晶體241或NMOS電晶體242,或兩者。 Referring to FIG. 2, the PMOS voltage-controlled resistor VCR 210 and the NMOS voltage-controlled resistor VCR 220 together form a rail-to-rail topology, so that the voltage-controlled resistor 200 can operate in the voltage VP and VN ranges. Across the ground to the power supply VDD level. In one embodiment, if it is ensured that the mean value of the voltage at the terminal VN is not greater than the turn-on voltage of the NMOS transistor 221, "the NMOS voltage-controlled resistor VCR 220 including the terminal VN may be selectively removed. For example, if it can be ensured that the mean value of the voltage on the terminal VP is not greater than the turn-on voltage of the PMOS transistor 211, the PMOS voltage-controlled resistor VCR 210 including the terminal VP can be selectively removed. Personnel may remove unnecessary circuitry and endpoints in any particular application, and details will not be explained in detail. Further, in other embodiments, PMOS transistor 241 or NMOS transistor 242 may be selectively removed, or both.

第3圖顯示另一壓控電阻(VCR)300的電路圖之示意圖。壓控電阻300適用於實現第1A圖之壓控電阻VCR 130和140。壓控電阻VCR 300包含有下列端點:端點VA用於耦接電壓V3或V4(參照第1A圖)、端點VB用於耦接電壓V2或V1(參照第1A圖)、端點VP用於耦接電壓VC1或VC2(參照第1A圖)、端點VN,用於耦接電壓VC2或VC1(參照第1A圖)、端點CK[1]和CK[2],用於分別耦接包含CLK[1]和CLK[2]之時脈訊號CLK(參照第1A圖)。 Figure 3 shows a schematic diagram of another circuit diagram of a voltage controlled resistor (VCR) 300. The voltage controlled resistor 300 is suitable for implementing the voltage controlled resistors VCR 130 and 140 of FIG. 1A. The voltage-controlled resistor VCR 300 includes the following terminals: the terminal VA is used to couple the voltage V3 or V4 (refer to FIG. 1A), the terminal VB is used to couple the voltage V2 or V1 (refer to FIG. 1A), and the terminal VP For coupling voltage VC1 or VC2 (refer to Figure 1A), terminal VN, for coupling voltage VC2 or VC1 (refer to Figure 1A), endpoints CK[1] and CK[2], respectively for coupling Connect the clock signal CLK including CLK[1] and CLK[2] (refer to Figure 1A).

如第3圖所示,壓控電阻VCR 300之元件包含有:一PMOS壓控電阻VCR 310、一NMOS壓控電阻VCR 320、以及一組預置電路330。PMOS壓控電阻VCR 310包含一反相器312、PMOS電晶體311和313和NMOS電晶體314。NMOS壓控電阻VCR 320包含一反相器322、PMOS電晶體321和NMOS電晶體323和324)。預置電路330包含一PMOS電晶體331與一NMOS電晶體333。PMOS電晶體331用以在端點CK[1]之時脈訊號為低準位時將端點VA之電壓上拉至VDD,而NMOS電晶體333用以在端點CK[2]之時脈訊號為高準位時將端點VB之電壓下拉至接地。此外,一實施例中(未圖示),熟悉本領域技術人員無需明確電路圖即可知悉,電路節點315和325之電壓係受 控於端點CK[1]之時脈訊號,經由兩個PMOS電晶體上拉至VDD。電路節點316和326之電壓係受控於端點CK[2]之時脈訊號,經由兩個NMOS晶體下拉至接地。一實施例中,壓控電阻VCR 300更包含可選擇是否設置(Optional)之電路CMOS電阻器340。CMOS電阻器340包含一PMOS電晶體341與一NMOS電晶體342。一PMOS電晶體341受控於端點CK[2]之時脈訊號。NMOS電晶體342受控於端點CK[1]之時脈訊號。在預設相位期間,時脈CLK[1]為低準位且時脈CLK[2]為高準位(參照第1A圖和第1B圖),端點CK[1]之時脈訊號為低準位,端點CK[2]之時脈訊號為高準位(參照第2圖)。於預設相位期間,端點VA之電壓上拉至VDD,端點VB之電壓下拉至接地,且PMOS電晶體313,NMOS電晶體323,以及CMOS電阻340全部關閉(turned off)如同開路電路(Open circuit)。 As shown in FIG. 3, the components of the voltage controlled resistor VCR 300 include a PMOS voltage controlled resistor VCR 310, an NMOS voltage controlled resistor VCR 320, and a set of preset circuits 330. The PMOS voltage controlled resistor VCR 310 includes an inverter 312, PMOS transistors 311 and 313, and an NMOS transistor 314. The NMOS voltage controlled resistor VCR 320 includes an inverter 322, a PMOS transistor 321 and NMOS transistors 323 and 324). The preset circuit 330 includes a PMOS transistor 331 and an NMOS transistor 333. The PMOS transistor 331 is used to pull the voltage of the terminal VA to VDD when the clock signal of the terminal CK[1] is low, and the NMOS transistor 333 is used for the clock of the terminal CK[2]. When the signal is high, the voltage at the terminal VB is pulled down to ground. In addition, in an embodiment (not shown), those skilled in the art will understand that the voltages of the circuit nodes 315 and 325 are affected by those skilled in the art without clarifying the circuit diagram. The clock signal controlled by the terminal CK[1] is pulled up to VDD via two PMOS transistors. The voltages at circuit nodes 316 and 326 are controlled by the clock signal at endpoint CK[2], pulled down to ground via two NMOS crystals. In one embodiment, the voltage controlled resistor VCR 300 further includes a circuit CMOS resistor 340 that is selectable or not. The CMOS resistor 340 includes a PMOS transistor 341 and an NMOS transistor 342. A PMOS transistor 341 is controlled by the clock signal at the terminal CK[2]. The NMOS transistor 342 is controlled by the clock signal of the terminal CK[1]. During the preset phase, the clock CLK[1] is low and the clock CLK[2] is high (refer to Figure 1A and Figure 1B), and the clock signal of the terminal CK[1] is low. At the level, the clock signal of the endpoint CK[2] is a high level (refer to Figure 2). During the preset phase, the voltage at the terminal VA is pulled up to VDD, the voltage at the terminal VB is pulled down to ground, and the PMOS transistor 313, the NMOS transistor 323, and the CMOS resistor 340 are all turned off like an open circuit ( Open circuit).

在主動相位期間,時脈CLK[1]為高準位且時脈CLK[2]為低準位(參照第1A圖和第1B圖),端點CK[1]之時脈訊號為高準位且端點CK[2]之時脈訊號為低準位,如第2圖所示。主動相位期間,預置電路330失效,而PMOS壓控電阻VCR 310、NMOS壓控電阻VCR 320、以及CMOS電阻340全部導通作為一受控於端點VP與端點“VN”之電壓控制之電阻。如同第1A圖 所示,壓控電阻VCR 130之端點VP和VN分別為電壓VC1和VC2之介面,而壓控電阻VCR 140之端點VP和VN分別為電壓VC1和VC2之介面。在主動相位期間,電壓VC1和VC2之間的差直將反應出壓控電阻VCR 130和VCR 140電阻之間的差直。如前所述,如此將使電壓V3和V4其中之一上升至VDD而另一個下降至接地。 During the active phase, the clock CLK[1] is at a high level and the clock CLK[2] is at a low level (see FIGS. 1A and 1B), and the clock signal at the endpoint CK[1] is a high level. Bit and the clock signal of endpoint CK[2] is low level, as shown in Figure 2. During the active phase, the preset circuit 330 fails, and the PMOS voltage-controlled resistor VCR 310, the NMOS voltage-controlled resistor VCR 320, and the CMOS resistor 340 are all turned on as a voltage controlled resistor controlled by the terminal VP and the terminal "VN". . As in Figure 1A As shown, the terminals VP and VN of the voltage controlled resistor VCR 130 are the interfaces of the voltages VC1 and VC2, respectively, and the terminals VP and VN of the voltage controlled resistor VCR 140 are the interfaces of the voltages VC1 and VC2, respectively. During the active phase, the difference between voltages VC1 and VC2 will directly reflect the difference between the voltages of voltage-controlled resistors VCR 130 and VCR 140. As previously mentioned, this will cause one of voltages V3 and V4 to rise to VDD and the other to fall to ground.

請參考第3圖,PMOS壓控電阻VCR 310和NMOS壓控電阻VCR 320形成「軌到軌拓撲」,使得壓控電阻300可以工作在VP和VN之電壓範圍,並橫跨接地到電源VDD之準位。一實施例中,若能確保端點VN上之電壓平均值(mean value)不低於PMOS電晶體321之導通電壓,可以選擇移除包含有端點VN之NMOS壓控電阻VCR 320。另一實施例,若能確保端點VP上之電壓平均值(mean value)不大於所PMOS電晶體314之導通電壓,可以選擇移除包含有端點VP之PMOS壓控電阻VCR 310。熟悉本領域技術人員可在任一特定應用去除不必要電路和端點,不再詳細解釋細節。再者,其他實施例中,可以選擇移除PMOS電晶體341或NMOS電晶體342,或兩者。 Referring to FIG. 3, the PMOS voltage-controlled resistor VCR 310 and the NMOS voltage-controlled resistor VCR 320 form a "rail-to-rail topology", so that the voltage-controlled resistor 300 can operate in the voltage range of VP and VN and across the ground to the power supply VDD. Level. In one embodiment, if it is ensured that the mean value of the voltage at the terminal VN is not lower than the turn-on voltage of the PMOS transistor 321, the NMOS voltage-controlled resistor VCR 320 including the terminal VN may be selectively removed. In another embodiment, if it is ensured that the mean value of the voltage at the terminal VP is not greater than the turn-on voltage of the PMOS transistor 314, the PMOS voltage controlled resistor VCR 310 including the terminal VP may be selectively removed. Those skilled in the art will be able to remove unnecessary circuitry and endpoints in any particular application and will not be explained in detail. Furthermore, in other embodiments, the PMOS transistor 341 or the NMOS transistor 342, or both, may be selectively removed.

請參考第1A圖。在預設相位期間,將內部電路節點上拉至VDD或下拉至接地,壓控電阻VCR 130和VCR 140被預設為 在進入主動相位時可以讓電流I1和I2最大化。如此將有助於加快比較之工作。在主動相位期間,任何情況,無論I1和I2是否皆變成零,壓控電阻VCR 130和壓控電阻VCR 140之間比較後,電壓V3和V4其中之一將下降至接地而另一個將上升至VDD。因此,本發明之實施例可實現同時具有相對高速操作和低功率消耗此兩個目標。 Please refer to Figure 1A. During the preset phase, the internal circuit node is pulled up to VDD or pulled down to ground, and the voltage-controlled resistors VCR 130 and VCR 140 are preset to Currents I1 and I2 can be maximized when entering the active phase. This will help speed up the work of comparison. During the active phase, in any case, whether I1 and I2 become zero, after comparison between the voltage-controlled resistor VCR 130 and the voltage-controlled resistor VCR 140, one of the voltages V3 and V4 will drop to ground and the other will rise to VDD. Thus, embodiments of the present invention can achieve both of the goals of relatively high speed operation and low power consumption.

熟悉本領域之技術人員可容易理解關於本發明教導與許多修改和元件變動的方法。據此,上述揭露之內容不應解釋為申請專利範圍之限制。任何修改與變更,均應落入本發明之申請專利範圍。 Methods of teaching the invention and many modifications and variations of the elements will be readily apparent to those skilled in the art. Accordingly, the above disclosure should not be construed as limiting the scope of the patent application. Any modifications and variations are intended to fall within the scope of the invention.

100‧‧‧軌對軌比較電路電路 100‧‧‧ rail-to-rail comparison circuit

110‧‧‧NMOS電晶體對 110‧‧‧ NMOS transistor pair

150‧‧‧PMOS電晶體對 150‧‧‧ PMOS transistor pairs

130、140‧‧‧壓控電阻 130, 140‧‧‧voltage controlled resistor

151、152‧‧‧PMOS電晶體 151, 152‧‧‧ PMOS transistor

111、112‧‧‧NMOS電晶體 111, 112‧‧‧ NMOS transistor

101、102、103、104‧‧‧電路節點 101, 102, 103, 104‧‧‧ circuit nodes

Claims (8)

一種軌對軌比較電路,用以比較一第一控制電壓及一第二控制電壓,包含有:一PMOS電晶體對,接收一第一電路節點之一第一電壓、與一第二電路節點之一第二電壓,並在一第三電路節點輸出一第三電壓,且在一第四電路節點輸出一第四電壓;一NMOS電晶體對,用於接收該第三電路節點之該第三電壓與該第四電路節點之該第四電壓,並在該第一電路節點輸出該第一電壓,且在該第二電路節點輸出該第二電壓;一第一壓控電阻,耦接於該第三電路節點與該第二電路節點之間,包含並聯之一第一P型壓控電阻及一第一N型壓控電阻,分別之電阻值受控於該第一控制電壓及該第二控制電壓;以及一第二壓控電阻,耦接於該第四電路節點與該第一電路節點之間,包含並聯之一第二P型壓控電阻及一第二N型壓控電阻,分別之電阻值受控於該第二控制電壓及該第一控制電壓;其中,該第一壓控電阻及該第二壓控電阻更用以接收一時脈訊號,該時脈訊號用以致能該第一壓控電阻及該第二壓控電阻。 A rail-to-rail comparison circuit for comparing a first control voltage and a second control voltage includes: a PMOS transistor pair receiving a first voltage of a first circuit node and a second circuit node a second voltage, and outputting a third voltage at a third circuit node, and outputting a fourth voltage at a fourth circuit node; an NMOS transistor pair for receiving the third voltage of the third circuit node And the fourth voltage of the fourth circuit node, and outputting the first voltage at the first circuit node, and outputting the second voltage at the second circuit node; a first voltage control resistor coupled to the first voltage Between the three circuit node and the second circuit node, a first P-type voltage control resistor and a first N-type voltage control resistor are connected in parallel, and the resistance values are respectively controlled by the first control voltage and the second control And a second voltage-controlled resistor coupled between the fourth circuit node and the first circuit node, including a second P-type voltage-controlled resistor and a second N-type voltage-controlled resistor in parallel, respectively The resistance value is controlled by the second control voltage and the first control Voltage; wherein the first resistor and the second voltage-controlled voltage-controlled resistor to receive a clock signal more, the clock signal is used to enable the first resistor and the second voltage-controlled voltage-controlled resistor. 如申請專利範圍第1項所述之電路,其中,該第一P型壓控電阻及該第二P型壓控電阻係由相同電路所實現,該第一N型壓控電阻及該第二N型壓控電阻係由相同電路所實現,該第一控制電壓和該第二控制電壓間的一電壓差值將使該第一壓控電阻之電阻值和該第二壓控電阻之電阻值間產生一電阻差值。 The circuit of claim 1, wherein the first P-type voltage control resistor and the second P-type voltage control resistor are implemented by the same circuit, the first N-type voltage control resistor and the second The N-type voltage-controlled resistor is realized by the same circuit, and a voltage difference between the first control voltage and the second control voltage causes a resistance value of the first voltage-controlled resistor and a resistance value of the second voltage-controlled resistor A resistance difference is generated between them. 如申請專利範圍第1項所述之電路,其中該第一P型壓控電阻包含相互串聯之一第一PMOS電晶體與一第二PMOS電晶體,該第一PMOS電晶體由該第一控制訊號控制,該第二PMOS電晶體由該時脈訊號控制;以及該第一N型壓控電阻包含相互串聯之一第一NMOS電晶體與一第二NMOS電晶體,該第一NMOS電晶體由該第二控制訊號控制,該第二NMOS電晶體由反向之該時脈訊號控制。 The circuit of claim 1, wherein the first P-type voltage-controlled resistor comprises a first PMOS transistor and a second PMOS transistor connected in series with each other, the first PMOS transistor being controlled by the first Signal control, the second PMOS transistor is controlled by the clock signal; and the first N-type voltage control resistor comprises a first NMOS transistor and a second NMOS transistor connected in series with each other, the first NMOS transistor is The second control signal is controlled, and the second NMOS transistor is controlled by the reverse clock signal. 如申請專利範圍第1項所述之電路,其中該第一壓控電阻更包含一CMOS電阻,該CMOS電阻與該第一P型壓控電阻和該第一N型壓控電阻並聯,其中該CMOS電阻包含一第三PMOS電晶體與一第三NMOS電晶體,該第三PMOS電晶體由該時脈訊號控制,該第三NMOS電晶體由反向之該時脈訊號控制。 The circuit of claim 1, wherein the first voltage-controlled resistor further comprises a CMOS resistor, wherein the CMOS resistor is connected in parallel with the first P-type voltage-controlled resistor and the first N-type voltage-controlled resistor, wherein the The CMOS resistor includes a third PMOS transistor and a third NMOS transistor. The third PMOS transistor is controlled by the clock signal, and the third NMOS transistor is controlled by the reverse clock signal. 如申請專利範圍第1項所述之電路,其中該第一P型壓控電阻包 含一第一PMOS電晶體、一第一反相器、一第二PMOS電晶體、以及一第一NMOS電晶體,該第一NMOS電晶體耦接該第一反相器之接地節點,該第一PMOS電晶體耦接該第一反相器之電源節點,該第二PMOS電晶體耦接該第一反相器之輸出;該第一PMOS電晶體與該第一NMOS電晶體由該第一控制訊號所控制,且該第一反相器用以接收反向之該時脈訊號;以及該第一N型壓控電阻包含一第三PMOS電晶體、一第二反相器、一第二NMOS電晶體以及一第三NMOS電晶體,該第三PMOS電晶體耦接該第二反相器之電源節點,該第二NMOS電晶體耦接該第二反相器之接地節點,且該第三NMOS電晶體耦接該第二反相器之輸出;該第三PMOS電晶體與該第二NMOS電晶體由該第二控制訊號所控制,且該第二反相器用以接收該時脈訊號。 The circuit of claim 1, wherein the first P-type voltage-controlled resistor package a first PMOS transistor, a first PMOS transistor, a second PMOS transistor, and a first NMOS transistor, the first NMOS transistor being coupled to the ground node of the first inverter, the first a PMOS transistor is coupled to the power supply node of the first inverter, and the second PMOS transistor is coupled to the output of the first inverter; the first PMOS transistor and the first NMOS transistor are Controlled by the control signal, and the first inverter is configured to receive the reverse clock signal; and the first N-type voltage control resistor includes a third PMOS transistor, a second inverter, and a second NMOS a third NMOS transistor coupled to the power supply node of the second inverter, the second NMOS transistor coupled to the ground node of the second inverter, and the third The NMOS transistor is coupled to the output of the second inverter; the third PMOS transistor and the second NMOS transistor are controlled by the second control signal, and the second inverter is configured to receive the clock signal. 如申請專利範圍第5項所述之電路,其中該第一壓控電阻更包含一CMOS電阻,該CMOS電阻與該第一P型壓控電阻和該第一N型壓控電阻並聯,其中該CMOS電阻包含一第四PMOS電晶體與一第四NMOS電晶體,該第四PMOS電晶體由該時脈訊號控制,該第四NMOS電晶體由反向之該時脈訊號控制。 The circuit of claim 5, wherein the first voltage-controlled resistor further comprises a CMOS resistor, wherein the CMOS resistor is connected in parallel with the first P-type voltage-controlled resistor and the first N-type voltage-controlled resistor, wherein the The CMOS resistor includes a fourth PMOS transistor and a fourth NMOS transistor. The fourth PMOS transistor is controlled by the clock signal, and the fourth NMOS transistor is controlled by the reverse clock signal. 一種軌對軌比較方法,用以比較一第一控制電壓及一第二控制電壓,包含有: 併入一PMOS電晶體對,在一第一電路節點接收一第一電壓且在一第二電路節點接收一第二電壓,並於一第三電路節點輸出一第三電壓,且在一第四電路節點輸出一第四電壓;併入一NMOS電晶體對,在該第三電路節點接收該第三電壓且在該第四電路節點接收該第四電壓,並於該第一電路節點輸出該第一電壓,且在該第二電路節點輸出該第二電壓;經由一第一壓控電阻耦接該第三電路節點之該第三電壓與該第二電路節點之該第二電壓,其中該第一壓控電阻包含並聯之一第一P型壓控電阻及一第一N型壓控電阻,分別之電阻值受控於該第一控制電壓及該第二控制電壓;以及經由一第二壓控電阻耦接該第四電路節點之該第四電壓與該第一電路節點之該第一電壓,其中該第二壓控電阻包含並聯之一第二P型壓控電阻及一第二N型壓控電阻,分別之電阻值受控於該第二控制電壓及該第一控制電壓;其中,經由一時脈訊號致能該第一壓控電阻及該第二壓控電阻。 A rail-to-rail comparison method for comparing a first control voltage and a second control voltage includes: Incorporating a PMOS transistor pair, receiving a first voltage at a first circuit node and receiving a second voltage at a second circuit node, and outputting a third voltage at a third circuit node, and at a fourth The circuit node outputs a fourth voltage; incorporating an NMOS transistor pair, receiving the third voltage at the third circuit node and receiving the fourth voltage at the fourth circuit node, and outputting the fourth voltage at the first circuit node a voltage, and outputting the second voltage at the second circuit node; coupling the third voltage of the third circuit node and the second voltage of the second circuit node via a first voltage control resistor, wherein the first voltage a voltage controlled resistor includes a first P-type voltage control resistor and a first N-type voltage control resistor connected in parallel, wherein the resistance value is controlled by the first control voltage and the second control voltage; and via a second voltage The control resistor is coupled to the fourth voltage of the fourth circuit node and the first voltage of the first circuit node, wherein the second voltage control resistor comprises a second P-type voltage control resistor and a second N-type connected in parallel Voltage-controlled resistors, respectively, whose resistance values are controlled by the second System voltage and the first control voltage; wherein a clock signal is enabled via the first resistor and the second voltage-controlled voltage-controlled resistor. 如申請專利範圍第7項所述之方法,其中,第一P型壓控電阻及該第二P型壓控電阻係由相同電路所實現,該第一N型壓控電阻及該第二N型壓控電阻係由相同電路所實現,該第一控制電壓和該第 二控制電壓間的差值將使該第一壓控電阻之電阻值和該第二壓控電阻之電阻值間產生一電阻差值。 The method of claim 7, wherein the first P-type voltage control resistor and the second P-type voltage control resistor are implemented by the same circuit, the first N-type voltage control resistor and the second N The type of voltage control resistor is realized by the same circuit, the first control voltage and the first The difference between the two control voltages will cause a difference in resistance between the resistance of the first voltage-controlled resistor and the resistance of the second voltage-controlled resistor.
TW104121252A 2014-07-17 2015-07-01 Rail-to-rail comparator circuit and method thereof TWI566528B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/333,539 US9130547B1 (en) 2014-07-17 2014-07-17 Rail-to-rail comparator circuit and method thereof

Publications (2)

Publication Number Publication Date
TW201618467A TW201618467A (en) 2016-05-16
TWI566528B true TWI566528B (en) 2017-01-11

Family

ID=54012682

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104121252A TWI566528B (en) 2014-07-17 2015-07-01 Rail-to-rail comparator circuit and method thereof

Country Status (3)

Country Link
US (1) US9130547B1 (en)
CN (1) CN105281720B (en)
TW (1) TWI566528B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106647698B (en) * 2016-12-08 2019-01-04 中国北方发动机研究所(天津) A kind of thyrite circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060164126A1 (en) * 2005-01-21 2006-07-27 Broadcom Corporation High-speed comparator
US20120293233A1 (en) * 2010-02-12 2012-11-22 Gupta Dev V Broadband Analog Radio-Frequency Components
US20130120025A1 (en) * 2010-09-15 2013-05-16 Fumihiro Inoue Comparator and ad converter provided therewith

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7635994B1 (en) * 2006-01-20 2009-12-22 Spansion Llc Fast rail-to-rail voltage comparator and method for rail-to-rail voltage comparison
JP5471272B2 (en) * 2009-10-09 2014-04-16 日本電気株式会社 Clock signal amplifier circuit, clock signal amplifier circuit control method, and clock signal distribution circuit
CN103166626A (en) * 2013-04-03 2013-06-19 中国科学院微电子研究所 Low voltage differential signal receiving circuit provided with current automatic control
CN103825615B (en) * 2014-01-14 2016-11-23 电子科技大学 A kind of high-speed time domain comparator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060164126A1 (en) * 2005-01-21 2006-07-27 Broadcom Corporation High-speed comparator
US20120293233A1 (en) * 2010-02-12 2012-11-22 Gupta Dev V Broadband Analog Radio-Frequency Components
US20130120025A1 (en) * 2010-09-15 2013-05-16 Fumihiro Inoue Comparator and ad converter provided therewith

Also Published As

Publication number Publication date
TW201618467A (en) 2016-05-16
CN105281720A (en) 2016-01-27
CN105281720B (en) 2017-10-17
US9130547B1 (en) 2015-09-08

Similar Documents

Publication Publication Date Title
TWI538404B (en) Level shifter
TWI468892B (en) Apparatus and method for regulating voltage and electronic device
US9705502B2 (en) Power switch control between USB and wireless power system
JP2016010069A (en) Interface circuit, semiconductor integrated circuit using the same
JP2008167094A (en) Level conversion circuit
TWI547098B (en) High-speed clocked comparator and method thereof
WO2016197153A1 (en) Fast pre-amp latch comparator
TWI692204B (en) Level shifter
US20180069537A1 (en) Level shift circuit and semiconductor device
TWI401890B (en) Voltage level converter
TWI566528B (en) Rail-to-rail comparator circuit and method thereof
US9191006B1 (en) Current-limited level shift circuit
JP2009010544A (en) Signal waveform equalizing circuit and reception circuit
TWI543536B (en) Low power, single-rail level shifters employing power down signal from output power domain and a method of converting a data signal between power domains
JP2988430B2 (en) Level conversion circuit
TW201526529A (en) Unity-gain buffer
TWI535198B (en) Differential signaling driver
JP3676724B2 (en) CMOS buffer circuit
JP2007306086A (en) Input buffer
JP2008017101A (en) Power on reset circuit
TWI493874B (en) Level shifter and operationalamplifier
JP5689781B2 (en) Gated VCO circuit
TWI533600B (en) Differential to single-end converter device and method therewith
KR100968442B1 (en) A reference voltage generator for Deep Power Down Mode
KR101560785B1 (en) Lvpecl transmitter