TWI566079B - Electronic device - Google Patents

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TWI566079B
TWI566079B TW101127925A TW101127925A TWI566079B TW I566079 B TWI566079 B TW I566079B TW 101127925 A TW101127925 A TW 101127925A TW 101127925 A TW101127925 A TW 101127925A TW I566079 B TWI566079 B TW I566079B
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Taiwan
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shape memory
memory alloy
electronic device
temperature
shape
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TW101127925A
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Chinese (zh)
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TW201407327A (en
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吳宗勳
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宏碁股份有限公司
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Description

電子裝置 Electronic device

本發明係有關於一種電子裝置,特別係有關於一種具有形狀記憶合金元件之電子裝置。 The present invention relates to an electronic device, and more particularly to an electronic device having a shape memory alloy component.

散熱問題長久以來一直是筆記型電腦、平板電腦等可攜式電子裝置在機構設計上的一大難題,常見的電子裝置通常係利用風扇搭配散熱孔的設計來進行散熱,但由於目前電子裝置的機體設計日趨輕薄,其內部可利用的散熱空間相對減少,使整體的散熱效率並不理想,無法滿足目前高運算速度之電子裝置的散熱需求。有鑑於此,如何突破既有的散熱限制,始成為一重要之課題。 The problem of heat dissipation has long been a major problem in the design of portable electronic devices such as notebook computers and tablet computers. The common electronic devices usually use the design of a fan and a heat dissipation hole to dissipate heat, but due to the current electronic devices The design of the body is becoming thinner and lighter, and the available heat dissipation space is relatively reduced, so that the overall heat dissipation efficiency is not ideal, and the heat dissipation requirement of the electronic device with high calculation speed cannot be met. In view of this, how to break through the existing heat dissipation restrictions has become an important issue.

本發明之一實施例提供一種電子裝置,包括一本體以及一形狀記憶合金元件,其中本體形成有一表面與一散熱開口,其中散熱開口設置於表面上,形狀記憶合金元件設置於散熱開口上,當形狀記憶合金元件的溫度低於一臨界溫度時,形狀記憶合金元件呈現一第一形狀,並遮蔽散熱開口;當形狀記憶合金元件受熱使溫度上升並超越臨界溫度時,形狀記憶合金元件產生形變並凸出於表面,此時形狀記憶合金元件呈現一第二形狀,並與本體之間形成一通道。 An embodiment of the present invention provides an electronic device including a body and a shape memory alloy component, wherein the body is formed with a surface and a heat dissipation opening, wherein the heat dissipation opening is disposed on the surface, and the shape memory alloy component is disposed on the heat dissipation opening. When the temperature of the shape memory alloy component is lower than a critical temperature, the shape memory alloy component assumes a first shape and shields the heat dissipation opening; when the shape memory alloy component is heated to raise the temperature and exceeds the critical temperature, the shape memory alloy component is deformed and Protruding out of the surface, the shape memory alloy member assumes a second shape and forms a passage with the body.

於一實施例中,當前述形狀記憶合金元件冷卻並使溫 度降低至臨界溫度以下時,形狀記憶合金元件由第二形狀回復至第一形狀,並遮蔽散熱開口。 In one embodiment, when the shape memory alloy component is cooled and warmed When the degree is lowered below the critical temperature, the shape memory alloy member returns from the second shape to the first shape and shields the heat dissipation opening.

於一實施例中,前述臨界溫度介於40℃至65℃。 In one embodiment, the aforementioned critical temperature is between 40 ° C and 65 ° C.

於一實施例中,前述形狀記憶合金元件具有雙程記憶效應。 In one embodiment, the aforementioned shape memory alloy component has a two-way memory effect.

於一實施例中,前述形狀記憶合金元件之材質包括鐵基合金、鎳-鈦合金或銅基合金。 In one embodiment, the material of the shape memory alloy component includes an iron-based alloy, a nickel-titanium alloy, or a copper-based alloy.

於一實施例中,當前述形狀記憶合金元件受熱使溫度上升並超越臨界溫度時,至少一部分之形狀記憶合金元件由麻田散體狀態轉換成沃斯田體狀態。 In one embodiment, when the shape memory alloy member is heated to raise the temperature and exceed the critical temperature, at least a portion of the shape memory alloy member is converted from the state of the field of the field to the state of the Worth field.

於一實施例中,前述形狀記憶合金元件形成有複數個狹縫,當形狀記憶合金元件的溫度低於臨界溫度時,狹縫呈現一閉合狀態;當形狀記憶合金元件受熱使溫度上升並超越臨界溫度時,形狀記憶合金元件產生形變,並使狹縫擴張至一開啟狀態。 In one embodiment, the shape memory alloy component is formed with a plurality of slits. When the temperature of the shape memory alloy component is lower than the critical temperature, the slit exhibits a closed state; when the shape memory alloy component is heated, the temperature rises and exceeds the critical value. At the temperature, the shape memory alloy member is deformed and the slit is expanded to an open state.

於一實施例中,前述狹縫為間隔排列。 In an embodiment, the slits are arranged at intervals.

於一實施例中,前述本體包括一滑槽,形狀記憶合金元件容置於滑槽內。 In one embodiment, the body includes a chute, and the shape memory alloy component is received in the chute.

於一實施例中,當前述形狀記憶合金元件產生形變時,形狀記憶合金元件於滑槽內移動。 In one embodiment, the shape memory alloy component moves within the chute when the shape memory alloy component is deformed.

首先請一併參閱第1、2圖,本發明一實施例之電子裝置E,例如為筆記型電腦或平板電腦,主要包括一本體1以及一形狀記憶合金元件2,其中本體1形成有一表面S1 以及設置於表面S1上的一散熱開口11,在本實施例中,散熱開口11例如為一矩形開口。前述形狀記憶合金元件2大致為一矩形結構並設置於散熱開口11上,其中形狀記憶合金元件2形成有複數個狹縫21,且狹縫21均朝同一方向延伸並間隔排列。如第2圖所示,形狀記憶合金元件2可在其溫度高於一臨界溫度時產生形變,並與本體1之間形成一通道P,藉以提高電子裝置E的散熱效率。 First, please refer to FIG. 1 and FIG. 2 together. The electronic device E of the embodiment of the present invention is, for example, a notebook computer or a tablet computer, and mainly includes a body 1 and a shape memory alloy component 2, wherein the body 1 is formed with a surface S1. And a heat dissipation opening 11 disposed on the surface S1. In the embodiment, the heat dissipation opening 11 is, for example, a rectangular opening. The shape memory alloy member 2 is substantially a rectangular structure and is disposed on the heat dissipation opening 11, wherein the shape memory alloy member 2 is formed with a plurality of slits 21, and the slits 21 are all extended in the same direction and spaced apart. As shown in FIG. 2, the shape memory alloy member 2 can be deformed when its temperature is higher than a critical temperature, and a passage P is formed with the body 1 to improve the heat dissipation efficiency of the electronic device E.

需特別說明的是,前述形狀記憶合金元件2的材質為具有雙程記憶效應(two-way shape memory effect)之合金,例如可為鐵基合金、鎳-鈦合金或銅基合金。 It should be particularly noted that the material of the shape memory alloy member 2 is an alloy having a two-way shape memory effect, and may be, for example, an iron-based alloy, a nickel-titanium alloy or a copper-based alloy.

在第1圖中,當電子裝置E尚未開始運作或溫度較低時,由於形狀記憶合金元件2的溫度係低於一臨界溫度,因此呈現大致為平坦的板狀(第一形狀),其中臨界溫度可介於40℃至65℃,且此時形狀記憶合金元件2係完全遮蔽散熱開口11。由於狹縫21在此時係為閉合狀態,故可防止灰塵等異物經由狹縫21或散熱開口11進入電子裝置E而造成損壞。 In FIG. 1, when the electronic device E has not started to operate or the temperature is low, since the temperature of the shape memory alloy member 2 is lower than a critical temperature, it exhibits a substantially flat plate shape (first shape), wherein the criticality The temperature may be between 40 ° C and 65 ° C, and at this time the shape memory alloy member 2 completely shields the heat dissipation opening 11 . Since the slit 21 is in a closed state at this time, foreign matter such as dust can be prevented from entering the electronic device E via the slit 21 or the heat dissipation opening 11 to cause damage.

接著請參閱第2圖,當電子裝置E開始運作且其內部的電子元件產生大量的熱能時,部分熱能會傳遞至形狀記憶合金元件2並使其受熱。當形狀記憶合金元件2的溫度上升並超越臨界溫度時,至少一部分形狀記憶合金元件2之合金材料會由麻田散體狀態轉換成沃斯田體狀態,使形狀記憶合金元件2開始產生形變,此時形狀記憶合金元件2會凸出於表面S1並形成弧狀(第二形狀),同時與本體1之間形成兩個通道P,使熱能可藉由通道P散出,進而提 高電子裝置E的散熱效率,並延長其內部元件的使用壽命。 Next, referring to Fig. 2, when the electronic device E starts to operate and the internal electronic components generate a large amount of thermal energy, part of the thermal energy is transferred to the shape memory alloy member 2 and is heated. When the temperature of the shape memory alloy member 2 rises and exceeds the critical temperature, at least a portion of the alloy material of the shape memory alloy member 2 is converted from the state of the field of the field to the state of the Worth field, and the shape memory alloy member 2 starts to be deformed. The shape memory alloy member 2 protrudes from the surface S1 and forms an arc shape (second shape), and at the same time forms two passages P with the body 1, so that thermal energy can be dissipated through the passage P, thereby The high electronic device E has a heat dissipation efficiency and prolongs the service life of its internal components.

特別地是,當形狀記憶合金元件2受熱而使其溫度上升並超越臨界溫度時,形狀記憶合金元件2會變形成弧狀,並使其上的狹縫21擴張至開啟狀態(如第2圖所示)。因此,熱能亦可同時經由擴張的狹縫21迅速離開電子裝置E,進一步達到散熱的功效。 In particular, when the shape memory alloy member 2 is heated to raise its temperature and exceed the critical temperature, the shape memory alloy member 2 is deformed into an arc shape, and the slit 21 thereon is expanded to an open state (as shown in FIG. 2). Shown). Therefore, the thermal energy can also quickly leave the electronic device E through the expanded slit 21 to further achieve the heat dissipation effect.

相對地,當形狀記憶合金元件2冷卻並使溫度降低至臨界溫度以下時,形狀記憶合金元件2會由弧狀(第二形狀)回復至平坦的板狀(第一形狀),並再次遮蔽散熱開口11,此時狹縫21則會由開啟狀態回復至閉合狀態。 In contrast, when the shape memory alloy member 2 is cooled and the temperature is lowered below the critical temperature, the shape memory alloy member 2 is returned to the flat plate shape (first shape) by the arc shape (second shape), and the heat dissipation is again shielded. The opening 11 is at this time the slit 21 is returned from the open state to the closed state.

接著請一併參閱第3、4圖,其中第4圖表示沿第3圖中A-A’方向之剖視圖。本發明另一實施例之電子裝置E更包括複數個散熱孔12(第3圖)與複數個滑槽13(第4圖),前述形狀記憶合金元件2係鄰近散熱孔12。當形狀記憶合金元件2的溫度低於臨界溫度時,形狀記憶合金元件2呈現平坦的板狀(第一形狀)並遮蔽散熱開口11,此時電子裝置E僅藉由散熱孔12進行散熱。如第4圖所示,滑槽13設置於散熱開口11的兩側邊,形狀記憶合金元件2的兩側邊緣則容置於滑槽13內。 Next, please refer to Figures 3 and 4 together, wherein Figure 4 shows a cross-sectional view taken along line A-A' in Figure 3. The electronic device E of another embodiment of the present invention further includes a plurality of heat dissipation holes 12 (Fig. 3) and a plurality of sliding grooves 13 (Fig. 4). The shape memory alloy member 2 is adjacent to the heat dissipation holes 12. When the temperature of the shape memory alloy member 2 is lower than the critical temperature, the shape memory alloy member 2 assumes a flat plate shape (first shape) and shields the heat dissipation opening 11, at which time the electronic device E radiates heat only through the heat dissipation holes 12. As shown in FIG. 4, the chute 13 is disposed on both sides of the heat dissipation opening 11, and both side edges of the shape memory alloy member 2 are accommodated in the chute 13.

再請一併參閱第5、6圖,其中第6圖表示沿第5圖中B-B’方向之剖視圖。當形狀記憶合金元件2的溫度上升並超越臨界溫度時,形狀記憶合金元件2會開始產生形變而形成弧狀(第二形狀),同時與本體1之間形成一個通道P,其中通道P鄰近於散熱孔12,此時熱能可同時藉由通道P以及散熱孔12離開電子裝置E,進而使電子裝置E更有效 率地散熱。 Referring again to Figs. 5 and 6, Fig. 6 is a cross-sectional view taken along the line B-B' in Fig. 5. When the temperature of the shape memory alloy member 2 rises and exceeds the critical temperature, the shape memory alloy member 2 starts to deform to form an arc shape (second shape) while forming a passage P with the body 1, wherein the passage P is adjacent to The heat dissipation hole 12, at which time the thermal energy can leave the electronic device E through the channel P and the heat dissipation hole 12 at the same time, thereby making the electronic device E more effective. Rate the heat.

如第6圖所示,當形狀記憶合金元件2產生形變時,形狀記憶合金元件2的邊緣部分可於滑槽13內滑移,此時形狀記憶合金元件2的中央部分會向上凸出,並與本體1之間形成通道P。 As shown in Fig. 6, when the shape memory alloy member 2 is deformed, the edge portion of the shape memory alloy member 2 can be slid in the sliding groove 13, and the central portion of the shape memory alloy member 2 is convex upward, and A passage P is formed with the body 1.

綜上所述,本發明提供一種電子裝置,主要包括一本體以及一形狀記憶合金元件,其中本體形成有一表面與設置於表面上的一散熱開口,形狀記憶合金元件設置於散熱開口上。當形狀記憶合金元件的溫度低於一臨界溫度時,形狀記憶合金元件呈現一第一形狀,並遮蔽散熱開口;當形狀記憶合金元件受熱使溫度上升並超越臨界溫度時,形狀記憶合金元件產生形變並凸出於表面,此時形狀記憶合金元件呈現一第二形狀,並與本體之間形成一通道,使熱能可藉由通道離開電子裝置,進而能提高電子裝置的散熱效率,並延長其內部元件的使用壽命。 In summary, the present invention provides an electronic device, which mainly includes a body and a shape memory alloy component, wherein the body is formed with a surface and a heat dissipation opening disposed on the surface, and the shape memory alloy component is disposed on the heat dissipation opening. When the temperature of the shape memory alloy component is lower than a critical temperature, the shape memory alloy component assumes a first shape and shields the heat dissipation opening; when the shape memory alloy component is heated to raise the temperature and exceeds the critical temperature, the shape memory alloy component is deformed. And protruding from the surface, the shape memory alloy component assumes a second shape, and forms a channel with the body, so that the thermal energy can leave the electronic device through the channel, thereby improving the heat dissipation efficiency of the electronic device and extending the interior thereof. The life of the component.

雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可做些許之更動與潤飾。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. Those skilled in the art having the ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

1‧‧‧本體 1‧‧‧ Ontology

2‧‧‧形狀記憶合金元件 2‧‧‧Shape memory alloy components

11‧‧‧散熱開口 11‧‧‧Dissipation opening

12‧‧‧散熱孔 12‧‧‧ vents

13‧‧‧滑槽 13‧‧‧Chute

21‧‧‧狹縫 21‧‧‧slit

E‧‧‧電子裝置 E‧‧‧Electronic device

P‧‧‧通道 P‧‧‧ channel

S1‧‧‧表面 S1‧‧‧ surface

第1圖表示本發明一實施例之形狀記憶合金元件呈現第一形狀時之示意圖;第2圖表示本發明一實施例之形狀記憶合金元件呈現第二形狀時之示意圖;第3圖表示本發明另一實施例之形狀記憶合金元件呈現第一形狀時之示意圖;第4圖表示沿第3圖中A-A’方向之剖視圖。 1 is a schematic view showing a shape memory alloy component according to an embodiment of the present invention in a first shape; FIG. 2 is a schematic view showing a shape memory alloy component according to an embodiment of the present invention in a second shape; and FIG. 3 is a view showing the present invention; A schematic view of the shape memory alloy member of another embodiment in a first shape; and Fig. 4 is a cross-sectional view taken along line A-A' of Fig. 3.

第5圖表示本發明另一實施例之形狀記憶合金元件呈現第二形狀時之示意圖;以及第6圖表示沿第5圖中B-B’方向之剖視圖。 Fig. 5 is a view showing a state in which the shape memory alloy member according to another embodiment of the present invention assumes a second shape; and Fig. 6 is a cross-sectional view taken along line B-B' in Fig. 5.

1‧‧‧本體 1‧‧‧ Ontology

2‧‧‧形狀記憶合金元件 2‧‧‧Shape memory alloy components

11‧‧‧散熱開口 11‧‧‧Dissipation opening

21‧‧‧狹縫 21‧‧‧slit

E‧‧‧電子裝置 E‧‧‧Electronic device

P‧‧‧通道 P‧‧‧ channel

S1‧‧‧表面 S1‧‧‧ surface

Claims (9)

一種電子裝置,包括:一本體,形成有一表面與一散熱開口,並包括一滑槽,其中該散熱開口設置於該表面上;以及一形狀記憶合金元件,設置於該散熱開口上並容置於該滑槽內;其中,當該形狀記憶合金元件的溫度低於一臨界溫度時,該形狀記憶合金元件呈現一第一形狀且對齊該表面,並遮蔽該散熱開口;當該形狀記憶合金元件受熱使溫度上升並超越該臨界溫度時,該形狀記憶合金元件產生形變,此時該形狀記憶合金元件呈現一第二形狀且凸出於該表面,並與該本體之間形成一通道。 An electronic device includes: a body formed with a surface and a heat dissipation opening, and includes a sliding slot, wherein the heat dissipation opening is disposed on the surface; and a shape memory alloy component disposed on the heat dissipation opening and received In the chute; wherein, when the temperature of the shape memory alloy member is lower than a critical temperature, the shape memory alloy member assumes a first shape and aligns the surface, and shields the heat dissipation opening; when the shape memory alloy member is heated The shape memory alloy member is deformed when the temperature is raised and exceeds the critical temperature, and the shape memory alloy member assumes a second shape and protrudes from the surface and forms a passage with the body. 如申請專利範圍第1項所述之電子裝置,其中當該形狀記憶合金元件冷卻並使溫度降低至該臨界溫度以下時,該形狀記憶合金元件由該第二形狀回復至該第一形狀,並遮蔽該散熱開口。 The electronic device of claim 1, wherein the shape memory alloy member returns from the second shape to the first shape when the shape memory alloy member is cooled and the temperature is lowered below the critical temperature, and The heat dissipation opening is shielded. 如申請專利範圍第1項所述之電子裝置,其中該臨界溫度介於40℃至65℃。 The electronic device of claim 1, wherein the critical temperature is between 40 ° C and 65 ° C. 如申請專利範圍第1項所述之電子裝置,其中該形狀記憶合金元件具有雙程記憶效應。 The electronic device of claim 1, wherein the shape memory alloy component has a two-way memory effect. 如申請專利範圍第1項所述之電子裝置,其中該形狀記憶合金元件之材質包括鐵基合金、鎳-鈦合金或銅基合金。 The electronic device of claim 1, wherein the material of the shape memory alloy component comprises an iron-based alloy, a nickel-titanium alloy or a copper-based alloy. 如申請專利範圍第1項所述之電子裝置,其中當該形狀記憶合金元件受熱使溫度上升並超越該臨界溫度時, 至少一部分之該形狀記憶合金元件由麻田散體狀態轉換成沃斯田體狀態。 The electronic device of claim 1, wherein when the shape memory alloy component is heated to raise the temperature and exceed the critical temperature, At least a portion of the shape memory alloy element is converted from a mascot state to a Worth field state. 如申請專利範圍第1項所述之電子裝置,其中該形狀記憶合金元件形成有複數個狹縫,當該形狀記憶合金元件的溫度低於該臨界溫度時,該些狹縫呈現一閉合狀態;當該形狀記憶合金元件受熱使溫度上升並超越該臨界溫度時,該形狀記憶合金元件產生形變,並使該些狹縫擴張至一開啟狀態。 The electronic device of claim 1, wherein the shape memory alloy component is formed with a plurality of slits, and when the temperature of the shape memory alloy component is lower than the critical temperature, the slits exhibit a closed state; When the shape memory alloy member is heated to raise the temperature and exceed the critical temperature, the shape memory alloy member is deformed and the slits are expanded to an open state. 如申請專利範圍第7項所述之電子裝置,其中該些狹縫為間隔排列。 The electronic device of claim 7, wherein the slits are arranged at intervals. 如申請專利範圍第1項所述之電子裝置,其中當該形狀記憶合金元件產生形變時,該形狀記憶合金元件於該滑槽內移動。 The electronic device of claim 1, wherein the shape memory alloy member moves within the chute when the shape memory alloy member is deformed.
TW101127925A 2012-08-03 2012-08-03 Electronic device TWI566079B (en)

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US20100167636A1 (en) * 2008-12-26 2010-07-01 Anandaroop Bhattacharya Active vents for cooling of computing device
US20110297349A1 (en) * 2010-06-02 2011-12-08 Hon Hai Precision Industry Co., Ltd. Enclosure of electronic device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100167636A1 (en) * 2008-12-26 2010-07-01 Anandaroop Bhattacharya Active vents for cooling of computing device
US20110297349A1 (en) * 2010-06-02 2011-12-08 Hon Hai Precision Industry Co., Ltd. Enclosure of electronic device

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