TWI563562B - Showerhead insulator and etch chamber liner - Google Patents

Showerhead insulator and etch chamber liner

Info

Publication number
TWI563562B
TWI563562B TW103119762A TW103119762A TWI563562B TW I563562 B TWI563562 B TW I563562B TW 103119762 A TW103119762 A TW 103119762A TW 103119762 A TW103119762 A TW 103119762A TW I563562 B TWI563562 B TW I563562B
Authority
TW
Taiwan
Prior art keywords
showerhead
insulator
etch chamber
chamber liner
liner
Prior art date
Application number
TW103119762A
Other languages
English (en)
Other versions
TW201440143A (zh
Inventor
James D Carducci
Olga Regelman
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201440143A publication Critical patent/TW201440143A/zh
Application granted granted Critical
Publication of TWI563562B publication Critical patent/TWI563562B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW103119762A 2008-01-10 2009-01-10 Showerhead insulator and etch chamber liner TWI563562B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2022908P 2008-01-10 2008-01-10

Publications (2)

Publication Number Publication Date
TW201440143A TW201440143A (zh) 2014-10-16
TWI563562B true TWI563562B (en) 2016-12-21

Family

ID=40849648

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103119762A TWI563562B (en) 2008-01-10 2009-01-10 Showerhead insulator and etch chamber liner
TW098100874A TWI445078B (zh) 2008-01-10 2009-01-10 噴氣頭絕緣器及蝕刻室襯墊

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098100874A TWI445078B (zh) 2008-01-10 2009-01-10 噴氣頭絕緣器及蝕刻室襯墊

Country Status (3)

Country Link
US (2) US20090178763A1 (zh)
TW (2) TWI563562B (zh)
WO (1) WO2009089244A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
US9790582B2 (en) * 2015-04-27 2017-10-17 Lam Research Corporation Long lifetime thermal spray coating for etching or deposition chamber application
US10233543B2 (en) * 2015-10-09 2019-03-19 Applied Materials, Inc. Showerhead assembly with multiple fluid delivery zones
US9953843B2 (en) * 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
KR102206515B1 (ko) * 2016-03-25 2021-01-22 어플라이드 머티어리얼스, 인코포레이티드 고온 프로세싱을 위한 챔버 라이너
CN107437490A (zh) * 2016-05-25 2017-12-05 北京北方华创微电子装备有限公司 内衬、反应腔室及半导体加工设备
US11004662B2 (en) * 2017-02-14 2021-05-11 Lam Research Corporation Temperature controlled spacer for use in a substrate processing chamber
RU180256U1 (ru) * 2017-12-27 2018-06-07 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Камера для динамического химического протравливания спеченных металлических пеноматериалов в форме трубы и определения их проницаемости жидкостям
US11239060B2 (en) 2018-05-29 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Ion beam etching chamber with etching by-product redistributor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US20070256785A1 (en) * 2006-05-03 2007-11-08 Sharma Pamarthy Apparatus for etching high aspect ratio features

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
JP4666912B2 (ja) * 2001-08-06 2011-04-06 エー・エス・エムジニテックコリア株式会社 プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US20060108069A1 (en) * 2004-11-19 2006-05-25 Samsung Electronics Co., Ltd. Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
TWI331770B (en) * 2005-11-04 2010-10-11 Applied Materials Inc Apparatus for plasma-enhanced atomic layer deposition
US20070113783A1 (en) * 2005-11-19 2007-05-24 Applied Materials, Inc. Band shield for substrate processing chamber
US20080110567A1 (en) * 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
US7780866B2 (en) * 2006-11-15 2010-08-24 Applied Materials, Inc. Method of plasma confinement for enhancing magnetic control of plasma radial distribution
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US20070256785A1 (en) * 2006-05-03 2007-11-08 Sharma Pamarthy Apparatus for etching high aspect ratio features

Also Published As

Publication number Publication date
TW200952063A (en) 2009-12-16
US20130327480A1 (en) 2013-12-12
TW201440143A (zh) 2014-10-16
WO2009089244A1 (en) 2009-07-16
TWI445078B (zh) 2014-07-11
US9196462B2 (en) 2015-11-24
US20090178763A1 (en) 2009-07-16

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