SG10201401262UA - Multifrequency capacitively coupled plasma etch chamber - Google Patents
Multifrequency capacitively coupled plasma etch chamberInfo
- Publication number
- SG10201401262UA SG10201401262UA SG10201401262UA SG10201401262UA SG10201401262UA SG 10201401262U A SG10201401262U A SG 10201401262UA SG 10201401262U A SG10201401262U A SG 10201401262UA SG 10201401262U A SG10201401262U A SG 10201401262UA SG 10201401262U A SG10201401262U A SG 10201401262UA
- Authority
- SG
- Singapore
- Prior art keywords
- multifrequency
- coupled plasma
- capacitively coupled
- plasma etch
- etch chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/36—Circuit arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16699409P | 2009-04-06 | 2009-04-06 | |
US12/533,984 US20170213734A9 (en) | 2007-03-30 | 2009-07-31 | Multifrequency capacitively coupled plasma etch chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201401262UA true SG10201401262UA (en) | 2014-08-28 |
Family
ID=42825210
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201401262UA SG10201401262UA (en) | 2009-04-06 | 2010-04-06 | Multifrequency capacitively coupled plasma etch chamber |
SG2011068285A SG174503A1 (en) | 2009-04-06 | 2010-04-06 | Multifrequency capacitively coupled plasma etch chamber |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2011068285A SG174503A1 (en) | 2009-04-06 | 2010-04-06 | Multifrequency capacitively coupled plasma etch chamber |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170213734A9 (en) |
EP (1) | EP2417626A4 (en) |
JP (2) | JP5808736B2 (en) |
KR (1) | KR101700981B1 (en) |
CN (2) | CN102365717A (en) |
SG (2) | SG10201401262UA (en) |
TW (1) | TWI517764B (en) |
WO (1) | WO2010117970A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
US9396908B2 (en) * | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9881772B2 (en) * | 2012-03-28 | 2018-01-30 | Lam Research Corporation | Multi-radiofrequency impedance control for plasma uniformity tuning |
JP6120527B2 (en) * | 2012-11-05 | 2017-04-26 | 東京エレクトロン株式会社 | Plasma processing method |
US9155182B2 (en) * | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
JP6249659B2 (en) * | 2013-07-25 | 2017-12-20 | 東京エレクトロン株式会社 | Plasma processing equipment |
KR102222902B1 (en) | 2014-05-12 | 2021-03-05 | 삼성전자주식회사 | Plasma apparatus and method of fabricating semiconductor device using the same |
WO2016113707A1 (en) * | 2015-01-16 | 2016-07-21 | PAVARIN, Daniele | A device intrinsically designed to resonate, suitable for rf power transfer as well as group including such device and usable for the production of plasma |
US10542613B2 (en) * | 2016-04-04 | 2020-01-21 | University Of South Carolina | Suppression of self pulsing DC driven nonthermal microplasma discharge to operate in a steady DC mode |
CN107305830B (en) * | 2016-04-20 | 2020-02-11 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma processing apparatus and plasma processing method |
CN107369604B (en) * | 2016-05-12 | 2019-10-11 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
US20180175819A1 (en) * | 2016-12-16 | 2018-06-21 | Lam Research Corporation | Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor |
CN114666965A (en) | 2017-06-27 | 2022-06-24 | 佳能安内华股份有限公司 | Plasma processing apparatus |
PL3648550T3 (en) * | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Plasma treatment device |
PL3648554T3 (en) * | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Plasma processing device |
EP3648552B1 (en) | 2017-06-27 | 2022-04-13 | Canon Anelva Corporation | Plasma treatment device |
KR102009348B1 (en) * | 2017-09-20 | 2019-08-09 | 주식회사 유진테크 | Batch type plasma substrate processing apparatus |
US11551909B2 (en) | 2017-10-02 | 2023-01-10 | Tokyo Electron Limited | Ultra-localized and plasma uniformity control in a plasma processing system |
KR101990577B1 (en) * | 2017-12-22 | 2019-06-18 | 인베니아 주식회사 | Field control unit and plasma processing apparatus having the same |
KR101979223B1 (en) * | 2017-12-22 | 2019-05-17 | 인베니아 주식회사 | Apparatus for processing plasma |
CN110323117A (en) * | 2018-03-28 | 2019-10-11 | 三星电子株式会社 | Apparatus for processing plasma |
WO2020003557A1 (en) | 2018-06-26 | 2020-01-02 | キヤノンアネルバ株式会社 | Plasma treatment device, plasma treatment method, program, and memory medium |
JP7455825B2 (en) | 2018-11-09 | 2024-03-26 | アプライド マテリアルズ インコーポレイテッド | High frequency filter system for processing chambers |
KR20210042653A (en) * | 2019-10-10 | 2021-04-20 | 주성엔지니어링(주) | Substrate Processing Apparatus |
CN113204930B (en) * | 2021-04-07 | 2023-04-11 | 哈尔滨工业大学 | Calculation method suitable for single-frequency and double-frequency driving atmospheric pressure dielectric barrier dispersion discharge electrical characteristic equivalent circuit |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61166028A (en) * | 1985-01-17 | 1986-07-26 | Anelva Corp | Dry etching equipment |
US5118996A (en) * | 1991-06-24 | 1992-06-02 | General Electric Company | Starting circuit for an electrodeless high intensity discharge lamp |
US5688330A (en) * | 1992-05-13 | 1997-11-18 | Ohmi; Tadahiro | Process apparatus |
JPH0613352A (en) * | 1992-06-29 | 1994-01-21 | Nec Corp | Plasma etching apparatus |
JP3022806B2 (en) * | 1997-05-15 | 2000-03-21 | 九州日本電気株式会社 | Semiconductor device manufacturing apparatus and adjustment method thereof |
KR100383257B1 (en) * | 2000-10-25 | 2003-05-09 | 주식회사 래디언테크 | Device for matching lower electrode of vacuum chamber using of semiconductor etching |
US6677711B2 (en) * | 2001-06-07 | 2004-01-13 | Lam Research Corporation | Plasma processor method and apparatus |
US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
TW200300649A (en) * | 2001-11-27 | 2003-06-01 | Alps Electric Co Ltd | Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method |
US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
JP2005085917A (en) * | 2003-09-08 | 2005-03-31 | Sharp Corp | Plasma treatment apparatus |
JP4553247B2 (en) * | 2004-04-30 | 2010-09-29 | 東京エレクトロン株式会社 | Plasma processing equipment |
US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
JP4523352B2 (en) * | 2004-07-20 | 2010-08-11 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP4699127B2 (en) * | 2004-07-30 | 2011-06-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
US20060278339A1 (en) * | 2005-06-13 | 2006-12-14 | Lam Research Corporation, A Delaware Corporation | Etch rate uniformity using the independent movement of electrode pieces |
JP4593413B2 (en) * | 2005-09-15 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | Plasma processing method and processing apparatus |
JP5348848B2 (en) * | 2007-03-28 | 2013-11-20 | 東京エレクトロン株式会社 | Plasma processing equipment |
US8450635B2 (en) * | 2007-03-30 | 2013-05-28 | Lam Research Corporation | Method and apparatus for inducing DC voltage on wafer-facing electrode |
US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
JP5165993B2 (en) * | 2007-10-18 | 2013-03-21 | 東京エレクトロン株式会社 | Plasma processing equipment |
TWM346902U (en) * | 2008-01-18 | 2008-12-11 | Contrel Technology Co Ltd | A slotted electrode with uniform distribution of electric field |
US9313872B2 (en) * | 2009-10-27 | 2016-04-12 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
-
2009
- 2009-07-31 US US12/533,984 patent/US20170213734A9/en not_active Abandoned
-
2010
- 2010-04-06 SG SG10201401262UA patent/SG10201401262UA/en unknown
- 2010-04-06 JP JP2012504755A patent/JP5808736B2/en active Active
- 2010-04-06 CN CN2010800178150A patent/CN102365717A/en active Pending
- 2010-04-06 CN CN201610324272.6A patent/CN105887050A/en active Pending
- 2010-04-06 TW TW099110611A patent/TWI517764B/en active
- 2010-04-06 KR KR1020117023441A patent/KR101700981B1/en active IP Right Grant
- 2010-04-06 EP EP10762275.5A patent/EP2417626A4/en not_active Withdrawn
- 2010-04-06 SG SG2011068285A patent/SG174503A1/en unknown
- 2010-04-06 WO PCT/US2010/030020 patent/WO2010117970A2/en active Application Filing
-
2015
- 2015-06-16 JP JP2015120759A patent/JP2015207777A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR101700981B1 (en) | 2017-01-31 |
KR20120009440A (en) | 2012-01-31 |
CN102365717A (en) | 2012-02-29 |
US20100252199A1 (en) | 2010-10-07 |
US20170213734A9 (en) | 2017-07-27 |
WO2010117970A3 (en) | 2011-01-13 |
SG174503A1 (en) | 2011-11-28 |
JP2015207777A (en) | 2015-11-19 |
EP2417626A4 (en) | 2014-08-06 |
CN105887050A (en) | 2016-08-24 |
EP2417626A2 (en) | 2012-02-15 |
TW201108872A (en) | 2011-03-01 |
JP5808736B2 (en) | 2015-11-10 |
TWI517764B (en) | 2016-01-11 |
WO2010117970A2 (en) | 2010-10-14 |
JP2012523101A (en) | 2012-09-27 |
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